Hybrid drive device

Abstract

The invention relates to a hybrid drive. The invention discloses a motor driver arrangement comprising: a converter comprising a first electrical network configured to convert AC electrical power to DC electrical power, the first electrical network comprising at least one electronic component comprising a wide bandgap semiconductor material; and an inverter electrically connected to the converter, the inverter comprising a second electrical network configured to generate an AC motor power signal from the DC electrical power, the second electrical network comprising a plurality of electronic components comprising a semiconductor material that is not a wide bandgap semiconductor material.

Description

[0001] This application is a divisional application of Chinese invention patent application 2020109590993, entitled “Hybrid Drive Device”, with a filing date of September 14, 2020. Technical Field

[0002] The present disclosure relates to a hybrid drive device. Background Art

[0003] An electrical device, such as a variable speed drive, variable frequency drive, or adjustable speed drive, may be connected to an alternating current (AC) high power distribution system, such as a power grid. The electrical device drives, powers, and / or controls a machine or non-machine type load. The electrical device includes a converter that converts AC power to direct current (DC) power and an inverter that converts DC power to AC power that is provided to a load. Summary of the invention

[0004] In one aspect, a motor drive device includes: a converter, the converter including a first electrical network, the first electrical network configured to convert AC electric power into DC electric power, the first electrical network including at least one electronic component, the at least one electronic component including a wide bandgap semiconductor material; and an inverter, the inverter electrically connected to the converter, the inverter including a second electrical network, the second electrical network configured to generate an AC motor power signal from the DC electric power, the second electrical network including a plurality of electronic components, the plurality of electronic components including a semiconductor material that is not a wide bandgap semiconductor material.

[0005] Embodiments may include one or more of the following features. The first electrical network may include a plurality of electronic components including wide bandgap semiconductor materials. The motor drive device may also include a control system configured to control the state of each electronic component in the first electrical network. The control system may also be configured to control the electronic components in the second electrical network. The control system may be configured to control the electronic components in the second electrical network to achieve pulse width modulation of DC electric power. The motor drive device may also include a filter system electrically connected to the converter. The filter system may receive AC electric power and provide filtered AC electric power to the converter, so that the converter is configured to convert the filtered AC electric power into DC electric power.

[0006] The motor driver device may further include a bus electrically connected to the converter and the inverter, and the bus may include at least one capacitive element.

[0007] The first electrical network may be configured as an M-level shifter and the second electrical network may be configured as an N-level shifter, where each of M and N is an integer value of two or greater. In some implementations, M and N are the same integer value.

[0008] In some implementations, M and N are not the same integer value.

[0009] The wide bandgap semiconductor material may include silicon carbide (SiC) or gallium nitride (GaN), and a semiconductor material that is not a wide bandgap semiconductor material may be silicon (Si) or gallium arsenide (GaAs).

[0010] A semiconductor material that is not a wide bandgap semiconductor material may be any semiconductor material having a bandgap of approximately 1-1.5 electron volts (eV) at 300 Kelvin (K), and a wide bandgap semiconductor material may be any semiconductor material having a bandgap of approximately 2eV-4eV at 300K.

[0011] Each of the electronic components in the first electrical network may be a transistor, and each of the electronic components in the second electrical network may be a transistor.

[0012] On the other hand, a device for a motor drive is configured to provide direct current (DC) electric power to one or more inverters, the device comprising: a converter, the converter comprising a first electrical network, the first electrical network configured to generate DC electric power from AC electric power, the first electrical network comprising a plurality of electronic components, the plurality of electronic components comprising wide bandgap semiconductor materials; and a DC link electrically connected to the converter, the DC link configured to store DC electric power from the converter and provide DC electric power to the one or more inverters. Each of the one or more inverters comprises a second electrical network, the second electrical network configured to generate an alternating current (AC) motor power signal, and each of the second electrical networks comprises an electronic component made of a semiconductor material that is not a wide bandgap semiconductor material.

[0013] Implementations may include one or more of the following features.The apparatus may also include a filter system electrically connected to the converter, and the converter may be located between the filter system and the DC link.

[0014] In another aspect, a system includes: a motor drive device, the motor drive device including: a converter, the converter including a first electrical network, the first electrical network including at least one electronic component made of a wide bandgap semiconductor material; a bus, the bus electrically connected to the converter; and an inverter, the inverter electrically connected to the bus, the inverter including a second electrical network, the second electrical network configured to generate an alternating current (AC) motor power signal, the second electrical network including electronic components made of a semiconductor material that is not a wide bandgap semiconductor material; and a motor, the motor configured to receive the AC motor power signal, wherein one or more of the speed, torque and direction of a rotor of the motor is determined by the AC motor power signal.

[0015] Implementations may include one or more of the following features. The system may include a housing enclosing the motor drive device. The system may include a filter system electrically connected to the converter.

[0016] Implementations of any technology described herein may include devices, apparatus, systems and / or methods. Details of one or more implementations are listed in the accompanying drawings and the following description. Other features will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a block diagram of a system including an electrical device.

[0018] Figure 2 is a block diagram of another system including an electrical device.

[0019] Figure 3A It is the representation of the stationary coordinate system and the rotating coordinate system.

[0020] Figure 3B is a control diagram for a vector controller for the converter.

[0021] Figure 3C is a control diagram for a vector controller for an inverter.

[0022] Figure 4A and Figure 4B Schematic diagram of the filter.

[0023] Figure 5A The turn-on waveforms of Si IGBT and SiC MOSFET are shown.

[0024] Figure 5B The turn-off waveforms of Si IGBT and SiC MOSFET are shown.

[0025] Fig. 6A is a bar graph comparing the losses of Si IGBT and SiC MOSFET.

[0026] Figure 6B is another bar graph comparing the losses of Si IGBTs and SiC MOSFETs.

[0027] Figure 6C is a graphical representation of the general trend of relative inductor cost as a function of switching frequency.

[0028] Fig. 7A and Figure 7B They are perspective view and side frame view of the electrical device respectively.

[0029] Figure 8 A block diagram of a converter electrically connected to a plurality of inverters. DETAILED DESCRIPTION

[0030] Reference Figure 1 , a block diagram of a system 100 is shown. The system 100 includes an electrical device 110 electrically connected to an alternating current (AC) electric power distribution network 101 and a load 102. As discussed in more detail below, the electrical device 110 is a hybrid drive device that includes a converter 120 implemented with electronic components made of wide bandgap (WBG) semiconductor materials and an inverter 140 implemented with electronic components made of conventional semiconductor materials. The hybrid configuration results in higher efficiency, smaller size, reduced weight and / or reduced cost. In addition, the hybrid configuration is well suited for use with existing loads (e.g., motors) in industrial control applications and does not require redesign or modification of the load.

[0031] The load 102 may be, for example, an induction motor, an induction motor, or a synchronous permanent magnet motor operating at a speed and torque determined by the AC motor power signal 104. The electrical device 110 generates the AC motor power signal 104. The electrical device 110 and the load 102 are used in an industrial process 103. The industrial process 103 may be, for example, a transmission process; a heating, ventilation, and air conditioning (HVAC) process; a natural gas or oil refining process; a mining process; or a pumping process.

[0032] The electric power distribution network 101 may be, for example, a multiphase electric power grid that provides electric power to industrial, commercial, and / or residential customers. The AC electric power distribution network 101 distributes AC electric power having a fundamental frequency of, for example, 50 or 60 Hertz (Hz). The distribution network 101 may have, for example, an operating three-phase line voltage of up to 690 volts (V) root mean square (RMS) for low voltage and above 690V (such as 10 kV) for medium or high voltage. The network 101 may include, for example, one or more transmission lines, distribution lines, power distribution or substation transformers, cables, and / or any other mechanism for transmitting electric power.

[0033] The electrical device 110 includes an electrical network 112 that receives AC electrical power 105 from the distribution network 101 at an input node 114. The electrical device 110 is enclosed in a housing or casing 111. The housing 111 is a three-dimensional body made of a solid and strong material that protects the electrical network 112. The input node 114 is accessible from the outside of the housing 111 so that the electrical device 110 can be connected to the distribution network 101. The electrical device 110 also includes an output port 109 that is accessible from the outside of the housing 111. The load 102 is connected to the electrical device 110 at the output port 109.

[0034] The electrical network 112 generates an AC motor power signal 104 for the load 102 based on the AC electric power 105 from the distribution network 101. The electrical network 112 includes a converter 120 and an inverter 140. The converter 120 includes an electrical network 122 configured to convert the AC electric power 105 into a direct current (DC) electric power 113. The converter 120 can be, for example, an active front end (AFE) or a pulse width modulation (PWM) rectifier. The inverter 140 includes an electrical network 142 configured to convert the DC electric power 113 into the AC motor power signal 104. The electrical device 110 can be, for example, a variable speed drive (VSD), an adjustable speed drive (ASD), or a variable frequency drive.

[0035] The electrical network 122 includes at least one electronic component (e.g., a transistor) made of a wide bandgap (WBG) semiconductor material. The electrical network 142 includes a plurality of electronic components, each of which is made of a conventional semiconductor material. WBG compound semiconductor materials are materials having a relatively large bandgap compared to conventional semiconductor materials. The bandgap is the energy difference between the top of the valence band and the bottom of the conduction band in a solid material. Conventional semiconductor materials have a bandgap of, for example, 1 electron volt-1.5 electron volts (eV) at 300 Kelvin (K). Silicon (Si) with a bandgap of 1.1 eV is an example of a conventional semiconductor material. Gallium arsenide (GaAs) with a bandgap of 1.43 eV at 300K is another example of a conventional semiconductor material. Yet another example of a conventional semiconductor is indium phosphide (InP), which has a bandgap of 1.27 at 300K. On the other hand, wide bandgap semiconductor materials have larger bandgaps, such as bandgaps of 2eV-4eV. Silicon carbide (SiC) having a band gap of about 3.2 eV and gallium nitride (GaN) having a band gap of about 3.4 eV are examples of WBG semiconductor materials.

[0036] The electrical device 110 employs a hybrid approach that uses electronic components made of WBG semiconductor materials in the electrical network 122 and electronic components made of conventional semiconductor materials in the electrical network 142. The hybrid approach results in the electrical device 110 being more compact and more efficient, lighter in weight, and lower in cost, as discussed below.

[0037] Figure 2 is a schematic diagram of system 200. Figure 2 The dashed lines in FIG. 2 are used to illustrate the grouping of elements and do not necessarily represent physical objects. However, the electrical device 210 may include a housing similar to the housing 111 ( Figure 1 ) shell.

[0038] The system 200 includes an electrical device 210 connected to a three-phase AC electric power distribution network 201 and a motor 202. The motor 202 may be, for example, an induction motor or a permanent magnet synchronous motor. The electrical device 210 receives three-phase electric power from the distribution network 201 and provides a three-phase motor power signal 204 to the motor 202.

[0039] The electric power distribution network 201 distributes AC electric power with a fundamental frequency of, for example, 50 or 60 Hertz (Hz). The distribution network 201 may have an operating voltage of up to 690V. The distribution network 201 may include, for example, one or more transmission lines, distribution lines, cables and / or any other mechanism for transmitting electric power. The distribution network 201 includes three phases referred to as a, b and c. Each phase has a corresponding voltage ea, eb, ec. The impedance of the distribution network 201 is represented by an inductor Ls connected in series with a resistor Rs. The impedance of the distribution network 201 depends on the impedance characteristics of the components included in the distribution network 201.

[0040] The electrical device 210 includes input nodes 214a, 214b, 214c, each of which is electrically coupled to one of the three phases of the distribution network 201. Figure 2 In the example of , input node 214a is electrically connected to phase a, input node 214b is electrically connected to phase b, and input node 214c is electrically connected to phase c. The power provided by distribution network 201 is nominally sinusoidal and includes only a single frequency component at a fundamental frequency.

[0041] The electrical device 210 includes an electrical network 212. The electrical network 212 includes a converter 220, a bus 218, and an inverter 240. Figure 2In the example of , the converter 220 is an AFE or a PWM rectifier. The converter 220 includes an electrical network 222, which includes modules 225_1, 225_2, and 225_3. Module 225_1 is electrically connected to input node 214a, module 225_2 is electrically connected to input node 214b, and module 225_3 is electrically connected to input node 214c.

[0042] exist Figure 2 In the illustrated embodiment, each of modules 225_1, 225_2 and 225_3 includes two controllable electronic components made of WBG semiconductor material. Module 225_1 includes electronic components 223_1 and 223_4. Module 225_2 includes electronic components 223_3 and 223_6. Module 225_3 includes electronic components 223_5 and 223_2.

[0043] The electronic components 223_1 to 223_6 may be arranged in any configuration that enables the converter 220 to convert AC electric power from the distribution network 201 into DC electric power. Figure 2 In the example of FIG. 4 , the electronic components 223_1 to 223_6 are arranged to form a rectifier. Figure 2 The converter 220 shown is a two-level converter, which means that the converter 220 generates two levels of output voltage for each phase. Other configurations are possible. For example, modules 225_1, 225_2, and 225_3 may be configured so that the converter 220 is a three-level converter capable of generating three levels of output voltage for each phase. In these embodiments, each module in modules 225_1, 225_2, and 225_3 may include four transistors made of WBG semiconductor material. Other other configurations are possible. The converter 220 may be an M-level converter, where M is an integer of 2 or greater, so that M levels of output voltage are generated for each phase. The input voltage can be extended to a medium voltage or high voltage above 690V, where the corresponding motor load is at such a corresponding voltage level.

[0044] Each of the electronic components 223_1 to 223_6 is any type of electronic component having at least two stable states: a first state in which current can flow in the electronic component, and a second state in which current cannot flow in the electronic component, and each of the electronic components 223_1 to 223_6 is controllable so that the electronic component can be reliably placed in a specific state. For example, each of the controllable electronic components 223_1 to 223_6 can be an insulated gate bipolar transistor (IGBT), a junction field effect transistor (JFET), a bipolar junction transistor (BJT), a metal oxide semiconductor transistor (MOSFET), or a thyristor. Each of the electronic components 223_1 to 223_6 can be, for example, a SiC or GaN transistor.

[0045] exist Figure 2 In the example of FIG. 2 , the states of the electronic components 223_1 to 223_6 are controlled by the control system 230_1. By controlling the state of each of the electronic components 223_1 to 223_6, the converter 220 rectifies the input currents ia2, ib2, ic2 into rectified currents ir. For example, in an embodiment in which the electronic components 223_1 to 223_6 are transistors, the gate of each transistor is configured to receive a gate signal from the control system 230_1 (or from a voltage source controlled by the control system 230_1) that determines the state of the transistor. A schematic diagram of a SiC MOSFET that can be used for each of the electronic components 223_1 is shown in FIG. Figure 2 223. MOSFET 223 includes a gate (g), a drain (d), and a source (s). When the MOSFET is turned on, current flows from the drain (d) to the source (s). The voltage at the gate (g) controls the state of MOSFET 223. MOSFET 223 is shown as being separate from converter 220. However, when an instance of MOSFET 223 is used as each of electronic components 223_1 to 223_6 in converter 220, the gate (g) of each instance of MOSFET 223 is connected to control system 230_1 so that control system 230_1 controls the state of each of electronic components 223_1 to 223_6.

[0046] The electronic components 223_1 to 223_6 are also electrically connected to the bus 218. The bus 218 includes a capacitor network 217. The capacitor network 217 includes one or more capacitors. The rectified current ir charges one or more capacitors in the capacitor network 217. The one or more capacitors in the network 217 store energy E, as shown in formula (1):

[0047] Formula (1),

[0048] Where C is the capacitance of one or more capacitors in network 217 , and Vdc is the voltage across bus 218 .

[0049] The inverter 240 includes a network of electronic switches 243_1 to 243_6, each of which is made of a conventional semiconductor material, such as Si or GaAs. The conventional semiconductor material may be any semiconductor material that is not a WBG semiconductor material. Each of the electronic switches 243_1 to 243_6 may be, for example, a power transistor made of Si. The electronic switches 243_1 to 243_6 are arranged so that the inverter 240 generates a motor power signal 204 from the energy stored in the capacitor network 217. The inverter 240 converts the energy stored in the capacitor network 217 into a three-phase AC motor power signal 204 provided to the motor 202. The three-phase motor power signal 204 has phase components 204u, 204v, 204w, wherein each phase component is provided to one of the three phases of the motor 202. Each phase 204u, 204v and 204w is a series of voltage pulses having an amplitude sufficient to operate the motor. The switching frequency of the AC motor power signal 204 may vary between, for example, 1 kHz and 20 kHz, with the upper limit of the frequency being determined by the limits of the switching speeds of the electronic components 243_1 to 243_6 and system thermal and performance requirements.

[0050] The inverter 240 may implement, for example, a pulse width modulation (PWM) technique to modulate the energy stored in the capacitor network 217 into an AC motor power signal 204. The PWM technique may be implemented based on any type of control algorithm, such as 6-step electronic commutation, various field-oriented controls, space vector PWM, or sinusoidal PWM. The PWM technique may be implemented by the control system 230. The switching of the electronic switches 243_1 to 243_6 is controlled so that the amplitude, frequency, and phase of the motor power signal 204 are also controlled. The amplitude, frequency, and phase of the motor power signal 204 determine the operating characteristics of the motor 202 so that the motor power signal 204 can be used to operate the motor 202 at a specific torque, speed, and direction.

[0051] Figure 2 The inverter 240 shown is a two-level inverter. However, other configurations are also possible. For example, the inverter 240 can be a three-level inverter or an N-level inverter, where N is an integer of 2 or greater. As described above, the converter 220 can be an M-level converter, where M is an integer of 2 or greater. M and N can be the same value, or M and N can be different values. For example, the electrical device 210 can be implemented with a 2-level converter and a 3-level inverter.

[0052] A schematic diagram of a Si IGBT that can be used for each of the electronic components 243_1 to 243_6 is shown in FIG. Figure 2 243. The IGBT 243 includes a gate (g), a collector (c), and an emitter (e). When the IGBT 243 is turned on, current flows from the collector (c) to the emitter (e). The voltage at the gate (g) controls the state of the IGBT 243. The IGBT 243 is shown as being separate from the converter 220. However, when an instance of the IGBT 243 is used as each of the electronic components 243_1 to 243_6 in the inverter 240, the gate (g) of each instance of the IGBT 243 is connected to the control system 230_2, so that the control system 230_4 controls the state of each of the electronic components 243_1 to 243_6.

[0053] exist Figure 2 In the example of , the motor power signal 204 is delivered to the motor 202 via the cable 207. The cable 207 is any type of cable suitable for carrying power in inverter operation. For example, the cable 207 may include three metal (e.g., copper) conductors (one for each phase) enclosed in an insulating tubing. In some embodiments, the conductors for each phase are enclosed in a separate insulating tubing so that there are as many cables as phases. Additional grounding cables or shields may also be provided.

[0054] The length of the cable 207 depends on the application. For example, in industrial control applications where it is desirable to keep the motor 202 relatively far from the electrical device 210, the cable 207 may be tens or hundreds of meters. Examples of industrial control applications include HVAC applications, pump applications, mining applications, to name a few.

[0055] System 200 includes a control system 230, which includes a control system 230_1 and a control system 230_2. Control system 230_1 is configured to control converter 220. Control system 230_2 is configured to control inverter 240. Control system 230_1 and control system 230_2 communicate via communication link 231. Communication link 231 can be any type of communication link configured for two-way communication. Any type of data can be transmitted via communication link 231. For example, control system 230_1 and control system 230_2 can share status information or operating parameters via communication link 231. Figure 2 In the example of FIG. 2 , the control systems 230_1 and 230_2 are shown as being separate from the electrical device 210 . However, the control systems 230_1 and 230_2 may be part of the electrical device 210 and may be placed in a housing together with the converter 220 , the bus 218 , and the inverter 240 , for example.

[0056] The control system 230_1 includes an electronic processing module 232_1, an electronic storage device 234_1, and an input / output (I / O) interface 236_1. The electronic processing module 232_1 includes two or more electronic processors. The electronic processor of the processing module 232_1 can be any type of electronic processor capable of controlling the WBG electronic components 223_1 to 223_6. For example, the electronic processor of the processing module 232_1 may include a general-purpose central processing unit (CPU), a graphics processing unit (GPU), a microcontroller, a field programmable gate array (FPGA), a complex programmable logic device (CPLD), and / or an application-specific integrated circuit (ASIC). In some embodiments, the electronic processing module 232_1 may include a digital signal processor (DSP), a microcontroller, and an application-specific integrated circuit (ASIC) to handle relatively complex control of the WBG semiconductor electronic components 223_1 to 223_6. Although in most embodiments, the electronic processing module 232_1 includes more than one electronic processor, in some embodiments, the electronic processing module 232_1 includes one electronic processor.

[0057] The electronic storage device 234_1 is any type of electronic memory capable of storing data and instructions (e.g., in the form of a computer program or software), and the electronic storage device 234_1 may include volatile components and / or non-volatile components. The electronic storage device 234_1 and the processing module 232_1 are coupled so that the processing module 232_1 can access or read data from the electronic storage device 234_1 and write data to the electronic storage device. The electronic storage device 234_1 stores instructions that, when executed, enable the electronic processing module 232_1 to analyze data, control components, and / or retrieve information. For example, the electronic storage device 234_1 may store a computer program that enables the control system 230_1 to control the state of the electronic components 223_1 to 223_6 by controlling the voltage at the gate of each of the electronic components 223_1 to 223_6. In another example, the electronic storage device 234_1 may store instructions that implement the vector controller 370 ( Figure 3B ) in all or aspects of the system 200. For example, the electronic storage device 234_1 may store instructions for implementing the Clarke transform, the Park transform, and various mathematical operations associated with the vector controller 370. The electronic storage device 234_1 may also store information about the system 200.

[0058] The control system 230_2 includes an electronic processing module 232_2, an electronic storage device 234_2, and an input / output (I / O) interface 236_2. The electronic processing module 232_2 includes one or more electronic processors. The electronic processor of the processing module 232_2 may be any type of electronic processor, and may or may not include a general-purpose central processing unit (CPU), a graphics processing unit (GPU), a microcontroller, a field programmable gate array (FPGA), a complex programmable logic device (CPLD), and / or an application-specific integrated circuit (ASIC). Compared to the processing module 232_1, the processing module 232_2 may have lower performance and lower complexity.

[0059] The electronic storage device 234_2 may be any type of electronic memory capable of storing data and instructions in the form of a computer program or software, and the electronic storage device 234_2 may include volatile components and / or non-volatile components. The electronic storage device 234_2 and the processing module 232_2 are coupled so that the processing module 232_2 can access or read data from the electronic storage device 234_2 and write data to the electronic storage device. The electronic storage device 234_2 stores instructions that, when executed, enable the electronic processing module 232_2 to analyze data, control components, and / or retrieve information. For example, the electronic storage device 234_2 may store a computer program that manages the PWM technique implemented by the inverter 240. The electronic storage device 234_2 may store a set of instructions in the form of one or more computer programs that implement a vector controller that controls the switching actions of the electronic components 243_1 to 243_6. The vector controller implemented to control the inverter 240 may be a vector controller 380 ( Figure 3C ). For example, the electronic storage device 234_2 may store instructions for implementing the Clarke transform, the Park transform, the inverse of the Clarke transform and the Park transform, and various mathematical operations associated with the vector controller.

[0060] The I / O interfaces 236_1 and 236_2 are any interfaces that allow human operators and / or autonomous processes to interact with the respective control systems 230_1 and 230_2. The I / O interfaces 236_1 and 236_2 may include, for example, a display (such as a liquid crystal display (LCD)), a keyboard, audio input and / or output (such as a speaker and / or a microphone), a visual output (such as a light, a light emitting diode (LED)) in addition to or in lieu of a display, a serial or parallel port, a universal serial bus (USB) connection, and / or any type of network interface, such as, for example, Ethernet. The I / O interfaces 236_1 and 236_2 may also allow for communication without physical contact through, for example, IEEE802.11, Bluetooth, or near field communication (NFC) connections. Each of the I / O interfaces 236_1 and 236_2 may have a different configuration, and the I / O interfaces 236_1 and 236_2 do not necessarily have to include the same components.

[0061] In some embodiments, the control systems 230_1 and 230_2 can be operated, configured, modified, or updated through their respective I / O interfaces 236_1 and 236_2. The I / O interfaces 236_1 and 236_2 may also allow the respective control systems 230_1 and 230_2 to communicate with components in the system 200 and with systems external to and remote from the system 200. For example, the I / O interface 236_1 may control a switch or a switch network (not shown) or a circuit breaker within the system 200 that allows the electrical device 210 to be disconnected from the distribution network 201. In another example, the I / O interface 236_2 may include a communication interface that allows communication between the control system 230_2 and a remote station (not shown) or between the control system 230_2 and a separate monitoring device.

[0062] The electrical device 210 also includes a filter system 219. The filter system 219 includes a filter ( Figure 2 Filter system 219_1 is electrically connected between module 225_1 and input node 214a, filter system 219_2 is electrically connected between module 225_2 and input node 214b, and filter 219_3 is electrically connected between module 225_3 and input node 214c. Figure 4A and Figure 4B An embodiment of the filter system 219 is shown. Figure 4A and Figure 4B Prior to the illustrated implementation, an overview of the filter system 219 is discussed.

[0063] Compared to devices made of conventional semiconductor materials, WBG semiconductor electronic components 223_1 to 223_6 can switch between the first state and the second state faster. The relatively fast switching speed of the electronic components 223_1 to 223_6 may generate high-order harmonics in the input currents ia, ib, and ic. The filter system 319 includes components (e.g., passive components such as capacitors and / or inductors) that attenuate or remove high-order harmonics.

[0064] The filter system 219 can also be used to control the currents ia2, ib2, and ic2 flowing between the filter system 219 and the converter 220. In an embodiment in which the filter system 219 is used to control the currents ia2, ib2, and ic2, the electrical device 210 also includes a current sensor 253 in each phase for measuring ia2, ib2, and ic2, and a voltage sensor 251 for measuring the voltage at the bus 218. The current sensor 253 and the voltage sensor 251 can be any type of current sensor and voltage sensor known in the art.

[0065] In these embodiments, the control system 230_1 also implements a vector control technique for the converter 220 . Figure 3A and Figure 3B An example of a vector control technique for converter 222 is involved. Figure 3A A two-phase dq reference system 380 is shown. Figure 3B is a control diagram of the vector controller 370 .

[0066] The three-phase voltages ea, eb and ec and the three-phase currents ia2, ib2 and ic2 are converted by corresponding transformation modules 371_1 and 371_2 into an equivalent two-phase synchronous dq reference frame ( Figure 3A ). Transformation modules 371_1 and 371_2 may implement, for example, Clarke transform and Park transform. Clarke transform converts the time domain components of the three-phase system (in the ABC frame) into two components in an orthogonal stationary frame (αβ). Park transform converts the two components in the αβ frame into an orthogonal rotating reference frame (dq) using the angle θ from the phase-locked loop 379.

[0067] The dq components of the three-phase currents ia2, ib2, ic2 are id, iq. The dq components of the three-phase voltages ea, eb, ec are Vd, Vq. The transformed current components id, iq and the transformed voltage components Vd, Vq are used as feedback variables for the controller 370. The iq component is used to control reactive power. The id component is used to control the voltage Vdc at the bus 218. The control calculations are performed in the dq reference frame. The components (id, iq) of the three-phase currents are controlled in an independent manner in the two inner current control loops 372_1 and 372_2.

[0068] The outer loop 373 controls the voltage Vdc and attempts to keep the voltage Vdc at or near a reference voltage Vdc*. The outer loop 373 sets the reference voltage Vdc*, which is the reference voltage or target voltage of the DC bus 218. The difference between the reference voltage Vdc* and the Vdc measured from the sensor 251 is determined at the comparator 375, and the difference is provided to the DC link controller 374, which generates a reference d-axis current component id*. The difference between the transformed current value id (provided by the inner loop 372_1) and the reference d-axis current component id* is determined at the comparator 376, and the difference is provided to the proportional integral (PI) controller 377. The PI controller 377 determines Vd*, which is a reference value for the d-axis voltage component.

[0069] In the inner loop 372_2, the transformed q-axis current component iq is multiplied by a cross-coupling module 384, where ω is the system frequency of the distribution network 201 and L is the inductance of the filter inductor connected to the converter side. The cross-coupling component related to iq is also added to Vd* and Vd at the comparator 382, ​​and the result is provided to the converter 220. In the inner loop 372_2, the difference between the component iq and the reference iq* is determined at the comparator 378 and provided to the PI controller 379, which determines the reference q-axis voltage Vq*. Vq*, Vq and the cross-coupling component caused by id are added at the comparator 381. The outputs of the comparators 381 and 382 are transformed back to the A, B, C reference frames and provided to the converter 220 to drive the components 223_1 to 223_6.

[0070] In this way, the voltage Vdc at the bus 218 can be adjusted to a constant level, and the currents ia, ib, ic can be kept sinusoidal or almost sinusoidal, so that the total harmonic distortion (THD) is reduced. For example, for a 480V three-phase input, the bus 218 can be maintained at 750V in a steady state. In addition, by adjusting the difference between the component iq and the reference iq*, the power factor can be maintained at a predetermined value of one or not equal to one. The power factor on the power grid side is the ratio of the actual power absorbed by the electrical system 201 to the apparent power flowing in the electrical system 201. The power factor is a dimensionless quantity with a value between 0 and 1. A power factor less than 1 indicates that the current and voltage are out of phase with each other. When the current and voltage are in phase with each other, the instantaneous power delivered to the load is maximized. When the current and voltage are in phase with each other and the maximum possible instantaneous power can be delivered to the converter 220, a unity power factor (power factor of 1) occurs.

[0071] The control system 230_2 implements a vector controller 380 for the inverter 240 . Figure 3Cis a control diagram of an exemplary vector controller 380 for inverter 240. Vector controller 380 is different from vector controller 370. Vector controller 380 has an outer speed loop and an inner current loop. Vector controller 380 obtains rotor speed and position information by estimation.

[0072] In the inner current loop, the currents ila, ilb, ilc flowing to each phase of the motor 202 are measured or estimated, and then transformed by the transformation module 399 into two-phase orthogonal components iα*, iβ* in the stationary α, β frame. Figure 3A The stationary α, β reference frames are shown in FIG. The transformation module 385 transforms the components iα*, iβ* into two-phase quadrature components isd, isq in the rotating dq reference frame. The transformation module 399 can implement the Clarke transformation, and the transformation module 385 can implement the Park transformation. The d component of the transformed current (isd) is compared with the reference isd* at the comparator 387, and the difference between isd and isd* is processed by the PI controller 389 to determine vsd*, which is the reference voltage of the d-axis voltage component.

[0073] In the outer speed loop, the rotational speed (ω) of the rotor and the position (θ) of the rotor are estimated by the speed and position estimation module 396. The speed and position estimation module 396 determines the speed (ω) and position (θ) of the rotor based on the d-axis component and the q-axis component of the voltage and current applied to the rotor. At the comparator 397, the determined speed (ω) of the rotor is compared with the reference speed (ω*). The difference between the determined speed (ω) and the reference speed (ω*) is provided to the speed controller module 398, which determines the reference q-axis current (isq*) based on the difference.

[0074] The q component of the transformed current (isq) is compared to the reference isq* at comparator 386, and the result is processed by PI controller 388 to determine vsq*, which is the reference voltage for the q-axis voltage component. The values ​​vsq* and vsd* are provided to a transformation module 395, which converts the values ​​vsq* and vsd* to voltage components vα, vβ in a stationary α, β reference frame. Figure 3A The stationary α, β reference frames are shown in . The transformation module 395 can implement the inverse Park transformation. The components vα, vβ are components of the stator voltage vector and are inputs to the modulation module 390. The modulation module 390 generates three-phase voltage command signals va*, vb*, vc* according to the transformed voltages vα* and vβ* using space vector pulse width modulation (SVPWM) technology. The modulation module 390 and the transformation module 395 can be implemented as software modules. For example, the electronic storage device 234_2 may include instructions that, when executed by the electronic processing module 232_2, perform the processing discussed above.

[0075] The three-phase voltage command signals va*, vb*, vc* are provided to the inverter 240. The inverter 240 generates the motor power signal 204 based on the three-phase voltage command signals va*, vb*, vc*. For example, the switching elements 243_1 to 243_6 may receive a direct current (DC) voltage from a DC power source 391 (e.g., a battery, a DC power source, or other DC power sources). The inverter 240 generates a pulse width modulation (PWM) signal for each of the three phases by applying a signal based on the three-phase voltage command signal to various switching elements 243_1 to 243_6. The DC voltage provided by the DC power source 391 is converted into a pulse width modulated three-phase AC voltage signal having specific characteristics through the controlled switching operation of the switching elements 243_1 to 243_6. Therefore, the SVPWM module 390 determines the voltage to be applied to the electronic components 243_1 to 243_6 of the inverter 240 to generate the motor power signal 204 having certain characteristics. Other implementations of vector controller 380 may be used.

[0076] Figure 4A and Figure 4B 419A and 419B, respectively. Either filter system 419A or 419B may be used as an electrical device 210 ( Figure 2 ) in the filter system 219. The filter system 419A comprises a filter system for the power distribution network 201 ( Figure 2 ) of each phase and a parallel capacitor 462 between the inductors 461_1 and 461_2. For simplicity, Figure 4A Only one phase is marked in FIG. Filter system 419B does not include capacitors but only an inductor 463 connected in series with the respective module 225_1, 225_2, 225_3. Inductors 461_1, 461_2 and 463 may be metal cores with copper coils, for example.

[0077] Filter system 419A is referred to as an LCL filter. Filter system 419B is referred to as an L filter. Both filter systems 419A and 419B attenuate high-frequency noise generated by the switching of WBG semiconductor electronic components 223_1 to 223_6. Filter systems 419A and 419B reduce or prevent high-frequency noise generated by converter 220 from entering distribution network 201. Filter system 419A can provide better noise attenuation than filter system 419B. On the other hand, filter system 419B is simpler and less expensive to implement, and also provides attenuation of high-frequency noise. Figure 4A Inductor 461_2 and Figure 4B The inductor 463 in the Figure 3BThe vector controller 370 is shown boosting the DC bus 218 voltage (Vdc) to its target value.

[0078] See again Figure 2 , other topologies can be used for filter systems 219 ( Figure 2 ). For example, in some embodiments, the filter system 219 is an LC filter including a single inductor and a parallel capacitor for each phase of the distribution network 201. Furthermore, the filter system 219 may be provided separately from the electrical device 210.

[0079] Although the electrical device 210 is Figure 2 201 and the motor 202, but the electrical device 210 may be packaged without the distribution network 201 or the motor 202. In other words, the electrical device 210 is a stand-alone device. In addition, the electrical device 210 may or may not include the control system 230. In addition, the converter 220 may be packaged separately and used with an inverter other than the inverter 240.

[0080] The electrical device 210 implements a hybrid approach that uses WBG semiconductor electronic components 223_1 to 223_6 in the converter 220 and conventional semiconductor electronic components 243_1 to 243_6 in the inverter 240. This topology achieves various performance improvements, as discussed below.

[0081] In a conventional three-phase two-level converter, six diodes made of conventional semiconductors (e.g., Si) are arranged to form a rectifier. The uncontrolled action of the diodes produces input current harmonics that are transmitted to the distribution network 201. For example, a conventional converter including six diodes made of conventional semiconductor materials may have a THD of 30% or more. On the other hand, an AFE (such as converter 220) includes components that are controlled so that the input currents ia, ib, ic remain sinusoidal or almost sinusoidal. The AFE generates much less harmonic distortion. For example, converter 220 may have a harmonic distortion of 5% or less. In addition, the power factor of the AFE can also be controlled by vector control techniques, as discussed above.

[0082] In addition, the AFE provides bidirectional or regenerative power flow, which means that electrical power can flow from the electrical distribution system 201 to the motor 202 or from the motor 202 to the electrical distribution system 201. Examples of regenerative applications (applications that generate energy) include lifting and lowering machines, such as: elevators, hoists, cranes, and escalators. Additional examples include torque controlled applications, such as tension unwinders, web handling systems, and test stands. Still other examples of regenerative applications include recycling applications, such as centrifuges in oil and gas extraction and production. In regenerative applications, energy is delivered from the motor 202 to the electrical distribution system 201.

[0083] In the "monitoring mode", energy is delivered to the electrical device 210, and current flows into the electrical device 210 and is output to the motor 202. The motor 202 converts electrical energy into mechanical energy, which is used to perform work, such as lifting a large object. When the object is lowered or the motor speed is reduced, the motor 202 acts like a generator ("generating mode"), and the potential energy of the system is converted into current, which flows back to the electrical device 210. If the electrical device 210 is implemented as an uncontrolled rectifier (for example, with six Si diodes), the current will be able to flow back to the capacitor network 217 through the inverter 240, but cannot go further due to the uncontrolled rectifier stage. In this case, the DC bus voltage will continue to rise until the VFD fails with an overvoltage error. The traditional solution is to add a braking DC link resistor group to dissipate the regenerated energy. The DC link resistor group generates heat, increases weight, volume and cost. However, the converter 220 including controllable WBG semiconductor components such as SiCMOSFET allows the electrical energy generated by the motor 202 to flow back into the distribution network 201. Thus, using controllable WBG semiconductor components in converter 220 eliminates the need for a resistor bank and allows regenerative energy to be recaptured.

[0084] Additional performance enhancements are achieved for electrical device 210. Using WBG semiconductor electronic components in converter 220 results in an overall smaller, more efficient, lighter, and / or lower cost electrical device 210 than if converter 220 were implemented using electronic components made of conventional semiconductor materials.

[0085] Furthermore, the use of electronic components made of conventional semiconductor materials in the inverter 240 allows the electrical device 210 to be used with many different motors and loads that have been configured to work with an inverter that includes electronic components made of conventional semiconductor materials. Furthermore, since the switching times of electronic components made of WBG semiconductor materials are much faster, the use of WBG semiconductor components in the inverter 240 will exacerbate known challenges in existing variable frequency drives, VFDs, and ASDs.

[0086] Figure 5A and Figure 5B The difference in switching times is shown. Figure 5A A comparison of the turn-on waveforms of Si IGBTs and SiC MOSFETs is provided. Figure 5B A comparison of the turn-off waveforms of Si IGBT and SiC MOSFET is provided. Figure 5A and Figure 5B The x-axis is the same as in , and the time unit is 100 nanoseconds / division.

[0087] See also Figure 5A, curve 590_1 shows the voltage of the SiC MOSFET as a function of time, curve 590_2 shows the voltage of the Si IGBT as a function of time, curve 591_1 shows the current of the SiC MOSFET as a function of time, and curve 591_2 shows the current of the Si IGBT as a function of time. The SiC MOSFET transitions to the on state faster than the Si IGBT. See Figure 5B , curve 592_1 shows the current of the SiC MOSFET as a function of time, curve 592_2 shows the current of the Si IGBT as a function of time, curve 593_1 shows the voltage of the SiC MOSFET as a function of time, and curve 593_2 shows the voltage of the Si IGBT as a function of time. The SiC MOSFET is turned on and off faster than the Si IGBT.

[0088] The switching times of WBG semiconductor electronic components are faster than the switching times of electronic components made from conventional semiconductor materials. The faster switching times of WBG semiconductor electronic components make them less attractive for use in inverter 240 for reasons discussed below.

[0089] The impedance of motor 202 is different than the impedance of cable 207. When a pulse in motor power signal 204 reaches motor 202, a portion of the pulse reflects off the impedance mismatch and propagates back toward inverter 240. The reflected pulse is added with subsequent pulses in motor power signal 204, causing a pulse with a greater voltage than expected to eventually reach motor 202 and cause an overvoltage condition.

[0090] The amplitude of the reflected pulse increases as the length of the cable 207 increases. The switching time (or rise time) of the electronic components used in the inverter 240 also has an impact on the amount of reflected pulses and overvoltage. If the turn-on time of the electronic components 243_1 to 243_6 in the inverter 240 is relatively slow, the capacitors in the motor 202 have time to charge and discharge at approximately the same rate as the pulses in the motor power signal 204 are generated. However, if the turn-on time of the electronic components 223_1 to 223_6 is relatively fast, the capacitors in the motor 202 do not have time to charge and discharge before the next pulse in the motor power signal 204 is applied to the motor 202. Therefore, if electronic components with relatively fast switching times (such as WBG electronic components) are used in the inverter 240, when the motor power signal 204 is applied to the motor 202 and there is an increased overvoltage at the motor 202, the energy stored in the motor 202 increases over time. Therefore, using WBG electronic components (which can be driven at a higher switching speed than electronic components made of conventional semiconductor materials) in the inverter 240 instead of the components 243_1 to 243_6 (which are made of conventional semiconductor materials) may make overvoltage occurrence more severe.

[0091] In addition, if WBG electronic components are used in the inverter 240 instead of conventional semiconductor electronic switches 243_1 to 243_6, the probability of motor 202 failing due to bearing current will be higher. The parasitic capacitance between the stator and the rotor of the motor 202 can induce a voltage on the rotor. If the voltage increases to a sufficient level, the voltage can be discharged to ground through the bearings of the motor 202. If the time for the voltage change is reduced, the induced voltage on the rotor is more likely to increase. In other words, the induced voltage on the rotor increases as the frequency of the motor power signal 204 increases. Therefore, if the switching elements in the inverter 240 are driven at a relatively high speed (such as the speed that can be achieved by electronic components made of WBG materials), the motor 202 will be more likely to be damaged or fail due to bearing currents.

[0092] Therefore, while electronic components made of WBG semiconductor materials have superior performance in some aspects compared to electronic components made of conventional semiconductor materials, using electronic components 243_1 to 243_6 (which are made of conventional semiconductor materials) in inverter 240 results in electrical device 210 being more robust and more economical.

[0093] The use of electronic components 223_1 to 223_6 in the converter 220, which are made of WBG semiconductor materials, also results in improvements to the electrical device 210. For example, since WBG electronic components have much lower losses than electronic components made of conventional semiconductor materials, the use of electronic components 223_1 to 223_6 in the converter 220 increases the overall efficiency of the electrical device 210. The use of WBG electronic components in the converter 220 also increases the power density due to the higher temperature resistance of the WBG electronic components. In addition, the use of WBG electronic components in the converter reduces the number of components including Figure 4A Inductors 461_1, 462_2 or Figure 4B The overall size of the electrical device 210 including the inductor 463.

[0094] Fig. 6A is a bar graph comparing the losses of a Si IGBT (cross-hatched patterned bars) and a SiC MOSFET (solid bars) at a switching rate of 20 kHz. Fig. 6A The bar graph shows the conduction loss, switching loss, and total loss in watts (W). Conduction loss is the loss that occurs when the transistor is turned on. Switching loss is the loss that occurs when the transistor is turned off. Total loss is the sum of conduction loss and switching loss. Fig. 6A As shown, the total losses of SiC MOSFETs are less than half of the total losses of Si IGBTs. Therefore, a converter made with SiC MOSFETs can be much smaller (e.g., half the size) than a converter made with Si IGBTs. The size reduction is due to the fact that SiC MOSFETs generate less heat at the same switching frequency. Since less heat is generated, thermal management components (such as heat sinks) can be made much smaller in converters (such as converter 220) using WBG semiconductor components. Therefore, converter 220 implemented with WBG semiconductor electronic components is able to deliver the same amount of power, but is smaller and therefore has a higher power density.

[0095] Figure 6B is a bar graph comparing the losses of a Si IGBT (cross-hatched patterned bars) and a SiC MOSFET (solid bars) when the Si IGBT is switched at its optimal and most efficient switching frequency (about 7 kHz) and the SiC MOSFET is switched at its optimal switching frequency (about 50 kHz). Figure 6B The conduction loss, switching loss and total loss are shown in W. Figure 6BAs shown in Figure 1, even when the Si IGBT is driven at its optimal frequency, the total losses of the SiC MOSFET and the Si IGBT are similar. Therefore, a converter made with SiC MOSFET and a converter made with Si IGBT can be made to the same size; however, an inverter made with SiC MOSFET can switch at a much higher frequency.

[0096] The ability of the converter to switch at higher frequencies allows the overall size of the electrical device 210 to be reduced. The impedance of an ideal inductor is given as jωL, where ω is the frequency and L is the inductance. In other words, the impedance of an ideal inductor is proportional to the frequency and inductance of the inductor. Therefore, for a filter including an inductor, such as filter 419A or filter 419B, the inductance required to attenuate unwanted frequencies decreases as the frequency to be attenuated increases. Therefore, since the WBG semiconductor electronic components switch at higher frequencies, when the converter is implemented with WBG electronic components (such as converter 220), the inductor in the filter can become smaller. This reduction in the size of the inductor results in an overall reduction in the size, weight, and cost of the electrical device 210, even if the size of the converter 220 is substantially the same as the size of a converter made with electronic components made of conventional semiconductor materials.

[0097] Additionally, when the switching frequency in inverter 240 is higher, the cost of the inductor used in filter 419A or 419B is generally lower. Figure 6C Graph 690 shows a general trend of relative inductor cost as a function of switching frequency. Graph 690 includes curves 691_1, 691_2, and 691_3, where each curve corresponds to a different target ripple current. Ripple is the amount of switching noise that is not suppressed by a filter such as the inductor in filter 419A or 419B. The ripple current is expressed as a percentage of the peak current. Curve 691_1 corresponds to a relatively high ripple (e.g., 50%), curve 691_3 corresponds to a relatively low ripple (e.g., 5%), and curve 691_2 corresponds to a ripple between a relatively high ripple and a relatively low ripple. At a given frequency, the inductor size increases as the target ripple decreases. However, and as discussed above, as ω increases, a smaller inductor can be used. Therefore, as Figure 6C As shown, the cost of an inductor generally decreases with frequency. Therefore, using WBG semiconductor components 223_1 to 223_6 in the converter 220 achieves cost savings because lower cost inductors can be used. In addition, the cost of WBG semiconductor components and their associated drive electronics and controllers is generally greater than the cost of components made from conventional semiconductor materials. However, the cost savings from using smaller inductors and reduced thermal and packaging requirements can balance the additional cost of using WBG electronic components 223_1 to 223_6 in the converter 220.

[0098] See also Fig. 7A and Figure 7B , showing a perspective view and a side frame view of an electrical device 710. The electrical device 710 is an electrical device 110 ( Figure 1 ). The electrical device 710 includes an electrical network 712. The electrical network 712 includes a converter using WBG semiconductor electronic components and an inverter using conventional semiconductor electronic components. This allows the electrical device 712 to have a smaller volume than a device that does not include such a hybrid electrical network.

[0099] The electrical device 710 includes a housing 711. The housing 711 is a three-dimensional structure. The housing 711 can be made of any strong and durable material. The housing 711 is shown as a cube, but can have any three-dimensional shape.

[0100] The electrical device 710 includes three regions 761, 762 and 763. These regions are within the housing 711 and Fig. 7A In the figure, the dashed line is shown. Fig. 7A and Figure 7B In the example of , these regions are stacked along the Z direction. However, other configurations are possible. For example, regions 761, 762, and 763 may be stacked along the X direction. These regions are spatial segments within the housing 711. Regions 761, 762, and 763 are not necessarily separate physical compartments, and the interior of the housing 711 may or may not be physically separated. In addition, regions 761, 762, and 763 may have the same Fig. 7A and Figure 7B The relative volumes shown are different relative volumes.

[0101] Area 761 includes an electronic system 765. The electronic system 765 includes various electronic and mechanical components associated with the user interface 760. The user interface 760 may include, for example, a touch screen, a keypad, knobs, dials, switches, and / or any other device that allows an operator to interact with the electrical device 710.

[0102] Region 762 includes electrical network 712. Region 763 includes filter system 719. Electrical network 712 includes a converter having WBG semiconductor electronic components, such as SiC transistors, arranged to form a rectifier. Filter system 719 is electrically connected to the rectifier. The WBG semiconductor electronic components occupy less space than conventional semiconductor devices arranged to form a rectifier. In addition, filter system 719 occupies less volume than similar filters that would be used with a converter including electronic components made of conventional semiconductor materials. For example, filter system 719 may be an LCL filter (such as a Figure 4A), but the electrical network 712 with a WBG-based converter allows the inductor for the LCL filter to be smaller than otherwise. Therefore, the filter system 719 is also smaller. In another example, the filter system 719 can include one inductor for each phase of the converter. This approach also results in space savings.

[0103] Thus, the volume of the electrical device 710 is reduced due to the hybrid configuration of the electrical network 712. Furthermore, the electrical network 712 experiences lower electrical losses and is therefore more efficient than an electrical network including a converter configured with components made of conventional semiconductors.

[0104] See also Figure 8 , the converter 820 is electrically connected to the bus 818. The converter 820 includes an electrical network 822 that converts AC electric power (e.g., from a distribution system such as the distribution network 201) into DC electric power. The converter 820 provides DC electric power to the bus 818. The electrical network 822 includes a plurality of WBG semiconductor electronic components, such as SiC transistors. The WBG semiconductor electronic components can be arranged in any manner capable of generating DC electric power. For example, the WBG semiconductor electronic components can be arranged as a 2-level rectifier or a 3-level rectifier.

[0105] Bus 818 is electrically connected to K inverters, where K is any integer equal to or greater than 1. The K inverters are labeled 840 ... 840_K. Each of inverters 840 ... 840_K is inverter 240 or is similar to inverter 240 ( Figure 2 ). Each of the inverters 840 ... 840_K includes a corresponding electrical network 842 ... 842_K. Each electrical network 842 ... 842_K includes a plurality of conventional semiconductor electronic components, such as Si transistors. Each of the inverters 840 ... 840_K converts the DC electrical power in the bus 818 into a motor power signal for a corresponding motor 802 ... 802_K (each of which can be a motor, such as motor 202).

[0106] Other implementations are also within the scope of the claims. For example, Figure 2 The electrical device 210 is shown for use with a three-phase distribution system 201 and a three-phase motor 202. However, other embodiments are possible. For example, the electrical device 210 may be configured to operate with more or fewer phases.

Claims

1. A device, include: A housing, the housing comprising: a first area, a second area, and a third area; a user interface and an electronic system associated with the user interface within the first area; an electrical device within the second area, wherein the electrical device is configured to generate an AC motor drive signal, and the electrical device comprises: A converter comprising a plurality of controllable electronic components made of a wide bandgap semiconductor material; and an inverter electrically connected to the converter, the inverter including a plurality of electronic components made of a material that is not a wide bandgap semiconductor; and A filter system is within the third region, the filter system is electrically connected to the converter, and is configured to reduce noise generated when an electronic component made of a wide bandgap semiconductor material is switched.

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