A perovskite solar cell and its fabrication method

Abstract

The application provides a perovskite solar cell and a preparation method thereof. The preparation method comprises the following steps: sequentially preparing a hole transport layer, a perovskite layer, an electron transport layer and a metal electrode on an ITO substrate. In the hole transport layer, PDADI is added into a mixed SAM solution, so that the uniform coverage of SAM on the ITO substrate is improved, the interface energy level is optimized, the hole extraction is promoted, the non-radiative recombination of the interface is reduced, the surface wettability of the hole transport layer is improved, a higher-quality thin film and a low-defect-density thin film are formed, and the efficiency and stability of the perovskite solar cell device are improved. For the perovskite solar cell, PDADI is added into a mixed SAM solution to prepare a hole transport layer, an inverted perovskite device is prepared, PDADI is added into the mixed SAM solution, the uniform coverage of SAM on the ITO substrate is improved, the interface energy level is optimized, the hole extraction is promoted, and the non-radiative recombination of the interface is reduced.

Description

Technical Field

[0001] This application relates to the field of solar cell device technology, and in particular to a perovskite solar cell and its fabrication method. Background Technology

[0002] In recent years, utilizing self-assembled monolayers (SAMs) for hole transport has become an effective strategy for enhancing the performance of perovskite solar cells (PSCs), increasing the power conversion efficiency (PCE) of inverted enhanced perovskite solar cells to over 26%. Compared with traditional hole transport materials, SAMs offer advantages such as high transparency, low transport resistance, high hole extraction rate, and low interfacial recombination rate. Their widespread application in single-junction, all-perovskite tandem, and perovskite-silicon tandem devices has been reported. Furthermore, the low material requirements of SAMs have the potential to reduce overall material costs, demonstrating promising commercial prospects.

[0003] Inhomogeneous coverage of self-assembled monolayers on transparent conductive oxides (TCOs) leads to interfacial energy loss and poor carrier extraction, limiting the reproducibility of high-efficiency devices, especially for large-area devices. Extensive research has been conducted in the past to improve the coverage of self-assembled monolayers.

[0004] Current methods for improving the coverage of self-assembled monolayers are time-consuming and labor-intensive, requiring processes such as molecular design and vacuum deposition. Furthermore, there is a risk that highly reactive nickel oxide sites may affect device stability, leading to insufficient device stability. Summary of the Invention

[0005] The technical problem this application aims to solve is that current methods for improving the coverage of self-assembled monolayers are time-consuming and labor-intensive, requiring processes such as molecular design and vacuum deposition. Furthermore, there is a risk that highly reactive nickel oxide sites may affect device stability, resulting in insufficient device stability.

[0006] In order to solve the above problems, or at least partially solve the above technical problems, this application provides a perovskite solar cell and a method for preparing the same.

[0007] In a first aspect, the present invention discloses a method for preparing a perovskite solar cell, which specifically includes the following steps:

[0008] Obtain the ITO substrate, perform substrate preprocessing on the ITO substrate, and obtain the preprocessed substrate;

[0009] A mixed SAM solution was prepared by coating the surface of a pretreated substrate with the mixed SAM solution to form a hole transport layer on the pretreated substrate, thereby obtaining a substrate with a SAM layer; the mixed SAM solution was prepared by mixing an ethanol solution of PDADI and MeO-2PACz.

[0010] A perovskite precursor solution was prepared and spin-coated onto a hole transport layer of a substrate with a SAM layer to form a perovskite layer, thus obtaining a substrate with a perovskite layer.

[0011] Get C 60 BCP was deposited on the perovskite layer of the substrate with the perovskite layer through thermal evaporation process to form an electron transport layer, thus obtaining a substrate with an electron transport layer.

[0012] Metallic silver is obtained and deposited onto a substrate with an electron transport layer using a thermal evaporation process to obtain a perovskite solar cell.

[0013] Preferably, the preparation of the mixed SAM solution involves coating the surface of the pretreated substrate with the mixed SAM solution to form a hole transport layer on the pretreated substrate, thereby obtaining a substrate with a SAM layer. This process specifically includes the following steps:

[0014] Obtain an ethanol solution of 0.2-0.5 mg / mL MeO-2PACz, add a predetermined amount of PDADI, stir for 30 min to mix evenly, and obtain a mixed SAM solution;

[0015] The mixed SAM solution was dropped onto a surface of the pretreated substrate, rotated at 4000 rpm and coated for 30 seconds, so that the surface of the ITO substrate was fully coated with the mixed SAM solution.

[0016] The pretreated substrate coated with a mixed SAM solution is annealed at 100°C to form a hole transport layer, resulting in a substrate with a SAM layer.

[0017] Preferably, the preparation of the perovskite precursor solution involves spin-coating it onto a hole transport layer of a substrate with a SAM layer to form a perovskite layer, thereby obtaining a substrate with a perovskite layer. This process specifically includes the following steps:

[0018] Using FA 0.85 MA 0.1 Cs 0.05 PbI3 was used to prepare perovskite precursor solutions;

[0019] A predetermined amount of MACL was added to the perovskite precursor solution, and the mixture was stirred for a predetermined time to obtain a perovskite precursor mixed solution.

[0020] A perovskite precursor mixture solution is dropped onto the hole transport layer of a substrate with a SAM layer. After two different spin-coating processes, a perovskite layer is formed, resulting in a substrate with a perovskite layer.

[0021] Preferably, the use of FA 0.85 MA 0.1 Cs 0.05 The preparation of perovskite precursor solution using PbI3 specifically includes the following steps:

[0022] A mixed solvent of DMF and DMSO was prepared, with a ratio of DMF to DMSO of 4:1.

[0023] Obtain the pre-ordered amount of FA 0.85 MA 0.1 Cs 0.05 PbI3 was dissolved in a mixed solvent of DMF and DMSO to obtain a perovskite precursor solution.

[0024] Preferably, the step of dropping the perovskite precursor mixed solution onto the hole transport layer of a substrate with a SAM layer, followed by two different stages of spin coating to form a perovskite layer, thereby obtaining a substrate with a perovskite layer, specifically includes the following steps:

[0025] A perovskite precursor mixed solution was continuously dripped onto the surface of the hole transport layer of a substrate with a SAM layer. After 10 seconds of rotation at 1000 rpm and coating treatment, the substrate with the first stage treatment was obtained.

[0026] The perovskite precursor mixture solution was dropped onto the substrate treated in the first stage, and after 40 seconds of rotation at 5000 rpm and coating treatment, the substrate treated in the second stage was obtained.

[0027] CB was added dropwise to the substrate treated in the second stage as an antisolvent, and the substrate was annealed at 100°C for 30 min to obtain a substrate with a perovskite layer.

[0028] Preferably, the step of obtaining C 60 BCP, along with other components, is deposited sequentially on a perovskite layer of a substrate with a perovskite layer using a thermal evaporation process to form an electron transport layer, resulting in a substrate with an electron transport layer. The specific steps include:

[0029] A perovskite layer substrate is passivated to obtain a passivated perovskite layer substrate.

[0030] Obtain the pre-ordered amount of C 60 It is thermally evaporated at a rate of 0.2 Å / s onto a substrate with a perovskite layer to form C 60 layer;

[0031] A predetermined amount of BCP is obtained and thermally evaporated onto a substrate with a perovskite layer at a rate of 0.15 Å / s to form a BCP layer. 60 The layer and the BCP layer together form an electron transport layer, resulting in a substrate with an electron transport layer.

[0032] Preferably, the passivation treatment of the substrate with the perovskite layer to obtain a passivated perovskite layer substrate specifically includes the following steps:

[0033] Prepare a PEAI solution, drop it onto a substrate with a perovskite layer, and spin-coat it at 4000 rpm for 30 seconds to form a passivation layer.

[0034] The amount of PEAI solution added is 0.5-1.5 mg / mL.

[0035] Preferably, the process of obtaining metallic silver and depositing it onto a substrate with an electron transport layer via a thermal evaporation process to obtain a perovskite solar cell specifically includes the following steps:

[0036] A predetermined amount of silver is obtained and thermally evaporated onto a substrate with an electron transport layer at a rate of 1 angstrom / second.

[0037] Secondly, the present invention discloses a perovskite solar cell, characterized in that it is prepared by the above-described perovskite solar cell preparation method.

[0038] Preferably, it includes a substrate layer, a self-assembled monolayer, a perovskite layer, an electron transport layer, and a metal electrode layer;

[0039] The metal electrode layer, the electron transport layer, the perovskite layer, the self-assembled monolayer, and the substrate layer are arranged sequentially.

[0040] The technical solution provided in this application has the following advantages compared with the prior art:

[0041] This application provides a perovskite solar cell and its fabrication method. The fabrication method involves sequentially fabricating a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode on an ITO substrate. In the hole transport layer, PDADI is added to a mixed SAM solution to improve the uniform coverage of the SAM on the ITO substrate, optimize the interfacial energy levels, promote hole extraction, reduce non-radiative recombination at the interface, and improve the surface wettability of the hole transport layer. This results in a higher quality thin film and a lower defect density, thereby enhancing the efficiency and stability of the perovskite solar cell device. Furthermore, the mixed SAM solution is prepared via spin-coating, which is simpler and easier to implement than the previous vacuum evaporation deposition of SAM materials.

[0042] For perovskite solar cells, PDADI was added to a SAM solution to be used as a hole transport layer to prepare inverted perovskite devices. The addition of PDADI to the mixed SAM solution improves the uniform coverage of SAM on the ITO substrate, optimizes the interface energy level, promotes hole extraction, and reduces nonradiative recombination at the interface.

[0043] Furthermore, the internal structure of the perovskite solar cell consists of an ITO substrate, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode. It adopts an inverted structure, placing the hole transport layer at the bottom to form a stepped energy level match with the perovskite layer and the top electron transport layer, which effectively reduces interfacial recombination and improves charge extraction efficiency. Attached Figure Description

[0044] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0045] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0046] Figure 1 A schematic flowchart illustrating a method for fabricating a perovskite solar cell provided in this application;

[0047] Figure 2 This application provides a schematic diagram of step S2 in a method for fabricating a perovskite solar cell.

[0048] Figure 3 This application provides a schematic diagram of step S3 in a method for fabricating a perovskite solar cell.

[0049] Figure 4 This application provides a schematic diagram of step S4 in a method for fabricating a perovskite solar cell.

[0050] Figure 5 This is a schematic diagram of the structure of a perovskite solar cell provided in this application.

[0051] Explanation of reference numerals in the attached figures:

[0052] 1. A perovskite solar cell;

[0053] 11. Base layer; 12. Self-assembled monolayer; 13. Perovskite layer; 14. Electron transport layer; 15. Metal electrode layer. Detailed Implementation

[0054] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0055] Firstly, see Figure 1-4 This invention discloses a method for preparing perovskite solar cells, which specifically includes the following steps:

[0056] Step S1: Obtain an ITO (indium tin oxide) substrate, perform substrate pretreatment on the ITO substrate, and obtain the pretreated substrate;

[0057] Step S2: Prepare a mixed SAM (self-assembled monolayer) solution. Coat the surface of the pretreated substrate with the mixed SAM solution to form a hole transport layer on the pretreated substrate, thus obtaining a substrate with a SAM layer. The mixed SAM solution is prepared by mixing an ethanol solution of PDADI (1,3-propanediamine hydroiodate) and MeO-2PACz (methoxy-2-(9H-carbazole-9-yl)ethylphosphonic acid).

[0058] Step S3: Prepare a perovskite precursor solution and spin-coat it onto the hole transport layer of a substrate with a SAM layer to form a perovskite layer, thus obtaining a substrate with a perovskite layer.

[0059] Step S4: Obtain C 60 (Fullerene) and BCP (2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline) were successively deposited on the perovskite layer of the substrate with the perovskite layer through a thermal evaporation process to form an electron transport layer, thus obtaining a substrate with an electron transport layer.

[0060] Step S5: Obtain metallic silver and deposit it onto a substrate with an electron transport layer using a thermal evaporation process to obtain a perovskite solar cell.

[0061] Specifically, in step S1, the ITO substrate is treated with ultraviolet ozone for 15 minutes, and then transferred to a nitrogen glove box for device fabrication. Ultraviolet ozone treatment cleans the ITO substrate surface, removing organic contaminants and reducing surface defects, resulting in a smoother surface and improved surface activity and electrical properties. Processing in a nitrogen glove box enhances manufacturing precision, effectively preventing oxidation of the ITO substrate during manufacturing and ensuring its performance. ITO is used for hole transport in mobile phones via external circuitry. It also serves as a support structure for the device, improving its structural stability. Furthermore, due to its inverted structure, the ITO substrate uses a highly transparent material, allowing light to reach the hole transport layer.

[0062] Specifically, in step S2, a mixed SAM solution is prepared by mixing PDADI with an ethanol solution of MeO-2PACz, which improves the uniform coverage of the ITO substrate by the mixed SAM and reduces non-radiative recombination at the interface. The mixed SAM solution is applied to the pretreated substrate to form a hole transport layer for extracting and transporting holes while blocking electrons.

[0063] Specifically, in step S3, the perovskite precursor solution is spin-coated onto the surface of the hole transport layer to form a perovskite layer, which is used to absorb visible light, absorb photons and generate excitons, and then separate them into electrons and holes.

[0064] Specifically, in step S4, C 60 BCP is deposited onto the surface of the perovskite layer through a thermal evaporation process to form an electron transport layer, which is used to extract and transport electrons, while blocking holes to prevent them from reaching the metal electrode and causing recombination. At the same time, it may be necessary to passivate defects on the perovskite surface.

[0065] Specifically, in step S5, a metal electrode made of metallic silver is used as a cathode to collect electrons, thus effectively collecting electrons.

[0066] The fabrication method involves sequentially preparing a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode on an ITO substrate. Specifically, PDADI is added to the mixed SAM solution in the hole transport layer to improve the uniform coverage of the SAM on the ITO substrate, optimize the interfacial energy levels, promote hole extraction, reduce non-radiative recombination at the interface, and improve the surface wettability of the hole transport layer. This results in a higher quality film with a lower defect density, thus enhancing the efficiency and stability of the perovskite solar cell device. Furthermore, the mixed SAM solution is prepared via spin-coating, a simpler and easier process compared to the previous vacuum evaporation deposition of SAM materials.

[0067] Step S2 specifically includes the following steps:

[0068] Step S21: Obtain an ethanol solution of 0.2-0.5 mg / mL MeO-2PACz, add a predetermined amount of PDADI, stir for 30 min to mix evenly, and obtain a mixed SAM solution;

[0069] Step S22: Drop the mixed SAM solution onto one surface of the pretreated substrate, rotate at 4000 rpm and perform a coating treatment for 30 seconds to coat the ITO substrate surface with the mixed SAM solution.

[0070] Step S23: The pretreated substrate coated with the mixed SAM solution is annealed at 100°C to form a hole transport layer, resulting in a substrate with a SAM layer.

[0071] Specifically, MeO-2PACz can combine with oxygen on the ITO surface to form an ordered monolayer, improving interfacial contact. Adding 0.3-1 mg of PDADI and stirring yields a mixed SAM solution. During preparation, the mixed SAM solution is continuously dripped while spin-coating is performed. 30-100 μL of the mixed SAM solution is dripped, followed by 5 minutes of annealing at 100°C. The high temperature allows the ethanol solvent to evaporate fully, reducing solvent residue and preventing an increase in ITO resistivity. It can be understood that adding PDADI during hole transport layer preparation improves the uniform coverage of the mixed SAM on the ITO substrate, reducing non-radiative recombination at the interface. The mixed SAM solution, coated on the pretreated substrate, forms a hole transport layer for extracting and transporting holes while blocking electrons.

[0072] Step S3 specifically includes the following steps:

[0073] Step S31: Use FA 0.85 MA 0.1 Cs 0.05 Preparation of perovskite precursor solution using PbI3 (formamidinium-methylammonium-cesium ternary mixed cationic lead iodide perovskite);

[0074] Step S32: Add a predetermined amount of MACL to the perovskite precursor solution and stir for a predetermined time to mix evenly to obtain a perovskite precursor mixed solution.

[0075] Step S33: Drop the perovskite precursor mixed solution onto the hole transport layer of the substrate with the SAM layer, and perform two different spin-coating processes to form a perovskite layer, thus obtaining a substrate with a perovskite layer.

[0076] Specifically, using FA 0.85 MA 0.1 Cs 0.05A perovskite precursor solution was prepared using PbI3, and 14 mol% MACl (methylammonium chloride) was added to the solution. The addition of MACl improves the battery performance; 14 mol% MACl significantly increases the photoelectric conversion efficiency and stability of the battery. It also reduces the supersaturation of the precursor solution, preventing rapid random nucleation during spin coating and promoting large grain formation, thus controlling crystallization kinetics. The perovskite precursor mixture was then dropped onto a hole transport layer to form a perovskite layer. This layer absorbs visible light, absorbing photons and generating excitons, which are then separated into electrons and holes.

[0077] Step S31 specifically includes the following steps:

[0078] Step S311: Prepare a mixed solvent of DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide), with a ratio of DMF to DMSO of 4:1;

[0079] Step S312: Obtain the predetermined amount of FA 0.85 MA 0.1 Cs 0.05 PbI3 was dissolved in a mixed solvent of DMF and DMSO to obtain a perovskite precursor solution.

[0080] Specifically, DMF and DMSO solvents are used. DMF solvent can efficiently dissolve precursor salts such as PbI2 (lead iodide), FAI (formamidinium iodide), MAI (methylammonium iodide), and CsI (cesium iodide), reducing viscosity and making it suitable for spin coating processes. DMSO can extend the solvent evaporation time, promote large grain growth, and during annealing, DMSO desorbs, releasing PbI2 to participate in the formation of the perovskite phase. In addition, a 4:1 ratio is used, with DMF as the main solvent to ensure sufficient dissolution of precursor salts, maximize dissolution efficiency, and ensure the uniformity of the spin-coated film.

[0081] Step S33 specifically includes the following steps:

[0082] Step S331: The perovskite precursor mixed solution is continuously dripped onto the surface of the hole transport layer of the substrate with the SAM layer. After 10 seconds of rotation at 1000 rpm and coating treatment, the substrate with the first stage treatment is obtained.

[0083] Step S332: Continue to drop the perovskite precursor mixture solution onto the substrate treated in the first stage, and after 40 seconds of rotation at 5000 rpm and coating treatment, obtain the substrate treated in the second stage.

[0084] Step S333: Add CB (chlorobenzene) as an antisolvent to the substrate treated in the second stage, and anneal at 100°C for 30 min to obtain a substrate with a perovskite layer.

[0085] Specifically, the lower rotation speed in the first stage allows the solution to be evenly distributed on the substrate, avoiding problems such as excessively thick edges or thin centers caused by high-speed rotation. The higher rotation speed in the second stage accelerates solvent evaporation, promotes rapid crystallization, and forms a dense perovskite layer. The initial low speed allows the solution to spread evenly and controls crystallization kinetics. The high-speed stage promotes solute supersaturation, forming more uniform grains and avoiding film defects such as cracks or pinholes caused by sudden high speed. CB is added as an antisolvent to adjust the solvent balance on the substrate before annealing during perovskite film preparation, thereby optimizing the perovskite crystallization quality.

[0086] Step S4 specifically includes the following steps:

[0087] Step S41: Passivate the substrate with the perovskite layer to obtain a passivated perovskite layer substrate;

[0088] Step S42: Obtain the predetermined amount of C 60 It is thermally evaporated at a rate of 0.2 Å / s onto a substrate with a perovskite layer to form C 60 layer;

[0089] Step S43: Obtain a predetermined amount of BCP and thermally evaporate it onto a substrate with a perovskite layer at a rate of 0.15 Å / s to form a BCP layer. 60 The layer and the BCP layer together form an electron transport layer, resulting in a substrate with an electron transport layer.

[0090] Specifically, a passivating agent is spin-coated onto the perovskite surface to form a passivation layer. This passivation layer is a monolayer, making the process relatively convenient. Passivation treatment can improve the efficiency of defect passivation and also enhance the photoelectric conversion efficiency of the battery. (The last sentence appears to be incomplete and possibly refers to a different process.) 60 C is deposited onto the surface of the perovskite layer using a thermal evaporation process to form C 60 Layer, 25nm thick, C 60 The layer can be used for electron extraction and carrier transport. A continuous, dense C60 layer covers the pinholes on the perovskite surface, suppressing metal electrode diffusion. Then, BCP is deposited onto the C60 layer using a thermal evaporation process. 60 A BCP layer with a thickness of 6 nm is formed on top of the C60 layer. The BCP layer can suppress chemical reactions such as oxidation between C60 and Ag, improve device stability, block hole backflow, and reduce dark current density. The C60 / BCP dual electron transport layer can improve photoelectric conversion capability. The thermal evaporation process can employ resistance heating.

[0091] Step S41 specifically includes the following steps:

[0092] Step S411: Prepare a PEAI (phenylethylamine hydroiodide) solution, drop it onto a substrate with a perovskite layer, and spin-coat it at 4000 rpm for 30 seconds to form a passivation layer.

[0093] Step S412: The amount of PEAI solution added is 0.5-1.5 mg / mL.

[0094] It is understandable that using PEAI solution as a passivating agent can improve passivation efficiency, enhance battery performance, suppress ion migration, and improve battery stability. In addition, the spin coating process makes the operation simpler and reduces the complexity of the process.

[0095] Step S5 specifically includes the following steps:

[0096] Step S51: Obtain a predetermined amount of silver and thermally evaporate it onto a substrate with an electron transport layer at a rate of 1 angstrom / second.

[0097] It is understandable that silver is used as a metal electrode to collect electrons as a cathode, and after deposition, the thickness of the metallic silver is 100 nm.

[0098] Secondly, see Figure 5 This invention discloses a perovskite solar cell 1, which is prepared by the above-described perovskite solar cell preparation method. The perovskite solar cell includes a substrate layer 11, a self-assembled monolayer 12, a perovskite layer 13, an electron transport layer 14, and a metal electrode layer 15; the metal electrode layer 15, the electron transport layer 14, the perovskite layer 13, the self-assembled monolayer 12, and the substrate layer 11 are arranged sequentially.

[0099] It can be understood that the internal structure of the perovskite solar cell 1 consists of an ITO substrate, a hole transport layer, a perovskite layer 13, an electron transport layer 14, and a metal electrode. It adopts an inverted structure, placing the hole transport layer at the bottom, forming a stepped energy level match with the perovskite layer 13 and the top electron transport layer 14, which effectively reduces interface recombination and improves charge extraction efficiency.

[0100] Furthermore, for the perovskite solar cell 1, PDADI was added to the SAM solution and mixed as a hole transport layer to prepare an inverted perovskite device. The addition of PDADI to the mixed SAM solution improved the uniform coverage of the SAM on the ITO substrate, optimized the interface energy level, promoted hole extraction, and reduced nonradiative recombination at the interface.

[0101] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0102] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0103] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0104] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0105] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0106] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. The illustrative expressions of the above terms in this specification should not be construed as necessarily referring to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0107] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Since these modifications and variations fall within the scope of the claims and their equivalents, this invention also intends to include these modifications and variations.

[0108] The above description describes specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for preparing a perovskite solar cell, characterized by, Specifically comprising the following steps: Obtaining an ITO substrate, performing substrate pretreatment on the ITO substrate to obtain a pretreated substrate; Preparation of a mixed SAM solution, coating the surface of the pretreated substrate with the mixed SAM solution, forming a hole transport layer on the pretreated substrate to obtain a substrate with a SAM layer; The mixed SAM solution is prepared by mixing PDADI and MeO-2PACz ethanol solution; Preparation of perovskite precursor solution, spin coating on the hole transport layer of the substrate with SAM layer to form perovskite layer, to obtain a substrate with perovskite layer; Acquisition C 60 BCP, in sequence, are deposited on the perovskite layer of the substrate with the perovskite layer by a thermal evaporation process to form an electron transport layer, thereby obtaining a substrate with the electron transport layer; Obtaining metal silver, depositing on the electron transport layer of the substrate with electron transport layer by thermal evaporation process to obtain perovskite solar cell.

2. The method of claim 1, wherein the perovskite solar cell is prepared by the steps of: The preparation of a mixed SAM solution, coating the surface of the pretreated substrate with the mixed SAM solution, forming a hole transport layer on the pretreated substrate to obtain a substrate with a SAM layer, specifically comprising the following steps: Obtaining 0.2-0.5 mg / mL MeO-2PACz ethanol solution, adding a predetermined amount of PDADI, stirring for 30 min to mix evenly to obtain a mixed SAM solution; Drop the mixed SAM solution on one surface of the pretreated substrate, spin at 4000 rpm and perform 30 s of coating treatment, the ITO substrate surface is coated with mixed SAM solution; The pretreated substrate coated with mixed SAM solution is annealed at 100℃ to form a hole transport layer, and a substrate with a SAM layer is obtained.

3. The method for preparing perovskite solar cells according to claim 1, characterized in that, The preparation of perovskite precursor solution, spin coating on the hole transport layer of the substrate with SAM layer to form perovskite layer, to obtain a substrate with perovskite layer, specifically comprising the following steps: Adopting FA 0.85 MA 0.1 Cs 0.05 PbI3 to prepare perovskite precursor solution; Add a predetermined amount of MACL to the perovskite precursor solution, stir for a predetermined time to mix evenly to obtain a perovskite precursor mixed solution; Drop the perovskite precursor mixed solution on the hole transport layer of the substrate with SAM layer, and perform two-stage spin coating treatment to form a perovskite layer to obtain a substrate with a perovskite layer.

4. The method of claim 3, wherein the perovskite solar cell is prepared by the steps of: The adoption of FA 0.85 MA 0.1 Cs 0.05 PbI3perovskite precursor solution, specifically comprising the following steps: Preparation of DMF and DMSO mixed solvent, the ratio of DMF and DMSO is 4:1; Obtain a predetermined amount of FA 0.85 MA 0.1 Cs 0.05 PbI3, dissolved in a mixed solvent of DMF and DMSO to obtain a perovskite precursor solution.

5. The method for preparing a perovskite solar cell according to claim 3, characterized in that, The perovskite precursor mixed solution is dropped on the hole transport layer of the substrate with SAM layer, and two-stage spin coating treatment is performed to form a perovskite layer to obtain a substrate with a perovskite layer, specifically comprising the following steps: The perovskite precursor mixed solution is continuously dropped on the surface of the hole transport layer of the substrate with SAM layer, and spin coating treatment is performed at 1000 rpm for 10 s to obtain a first-stage treated substrate; Continue to drop the perovskite precursor mixed solution on the first-stage treated substrate, spin coating treatment is performed at 5000 rpm for 40 s to obtain a second-stage treated substrate; Drop CB as anti-solvent on the second-stage treated substrate, and anneal at 100℃ for 30 min to obtain a substrate with a perovskite layer.

6. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The acquisition C 60 BCP, in turn, is deposited on the perovskite layer of the substrate with the perovskite layer by a thermal evaporation process to form an electron transport layer, to obtain a substrate with an electron transport layer, specifically comprising the following steps: Performing passivation treatment on the substrate with perovskite layer to obtain a passivated perovskite layer substrate; A predetermined amount of C was taken 60 thermally evaporated at a rate of 0.2 Angstroms / second onto a substrate with a perovskite layer to form a C 60 layer; A predetermined amount of BCP was thermally evaporated at a rate of 0.15 angstroms / second onto the substrate with the perovskite layer to form a BCP layer, C 60 The layer and the BCP layer constitute an electron transport layer, and a substrate with the electron transport layer is obtained.

7. The method for preparing a perovskite solar cell according to claim 6, characterized in that, The substrate with perovskite layer is subjected to passivation treatment to obtain a passivated perovskite layer substrate, specifically comprising the following steps: A PEAI solution is prepared, dropped on the substrate with perovskite layer, and spin-coated at a speed of 4000 rpm for 30 s to form a passivation layer. The amount of the PEAI solution is 0.5-1.5 mg / mL.

8. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The metal silver is obtained, deposited on the electron transport layer of the substrate with electron transport layer by a thermal evaporation process to obtain a perovskite solar cell, specifically comprising the following steps: A predetermined amount of silver is obtained, and is thermally evaporated on the substrate with electron transport layer at a rate of 1 angstrom / s.

9. A perovskite solar cell, characterized by, The perovskite solar cell is prepared by the preparation method of any one of claims 1-8.

10. The perovskite solar cell according to claim 9, characterized in that, It comprises a substrate layer, a self-assembled monolayer, a perovskite layer, an electron transport layer, and a metal electrode layer. The metal electrode layer, the electron transport layer, the perovskite layer, the self-assembled monolayer, and the substrate layer are sequentially arranged.

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