System and method for laser composite processing of wafer

Abstract

The invention relates to a system and a method for laser composite processing of a wafer, belongs to the technical field of integrated circuit manufacturing, and solves the problem that a whole set of cutting process from a wafer to a chip is difficult to realize by an existing laser device. According to the system, a self-adaptive control device controls a laser generation module, a wafer positioning module, a conveying module, a matched optical device and a processing chamber to move under a specific working condition, and controls feeding, discharging, positioning, processing or unloading operation of wafers at the same time; the laser generation module emits a laser beam; the processing chamber is used for carrying out deionization cleaning and drying treatment or membrane scraping and splitting treatment on the wafer; the mechanical clamping device is used for clamping the wafer; the wafer positioning module is used for fixing a wafer and driving the wafer to move among a laser grooving station, a polishing station and a hidden cutting station or a processing chamber station; the conveying module conveys the wafer positioning module to different stations; and a matched optical device adjusts the laser grooving-polishing-implicit cutting laser beam in real time and irradiates the laser beam on the wafer. And high-precision and high-quality cutting of the wafer is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit manufacturing, and in particular to a system and method for laser composite processing of wafers. Background Art

[0002] In the manufacturing process of integrated circuit chips, wafer cutting (also known as wafer dicing) is one of the most important process steps, which directly determines the integrity and reliability of the chip. Although the traditional mechanical cutting technology is quite mature, it is increasingly difficult to meet the cutting needs of high-performance, ultra-thin, and ultra-small chips due to its shortcomings such as slow cutting speed, large damage, and low precision. Therefore, the use of laser technology for cutting has become a popular research direction.

[0003] At present, the method of using laser grooving technology for scribing has attracted much attention due to its advantages such as fast cutting speed, small damage and high precision. However, if there is a metal layer, passivation layer or impurities on the surface of the wafer, it will seriously affect the focusing effect of the laser, resulting in cracks, molten particles and burrs when laser grooving, resulting in poor wafer cutting quality. It is worth noting that the existing laser processing system can usually only complete one laser processing process alone for wafer cutting, and cannot realize the composite processing of multiple laser processes. In addition, when facing ultra-thin and ultra-small chips, the existing laser technology is difficult to realize the entire set of cutting processes from wafer to chip, which limits the application scope and efficiency of laser processing in the field of integrated circuit chip manufacturing. Summary of the invention

[0004] In view of the above analysis, the embodiments of the present invention aim to provide a system and method for laser composite processing of wafers, so as to solve the problem that existing laser devices are difficult to realize the entire cutting process from wafer to chip, thereby limiting the application scope and efficiency of laser processing in the chip manufacturing field.

[0005] On the one hand, an embodiment of the present invention provides a system for laser composite processing of wafers, including: an adaptive control device for controlling the movement of a laser generating module, a wafer positioning module, a conveying module, a matching optical device and a processing chamber under specific working conditions, and controlling the loading and unloading, positioning, processing or unloading operations of the wafer via a mechanical clamping device and the wafer positioning module; the laser generating module is used to emit a laser beam, and the laser beam includes a laser grooving laser beam, a laser polishing laser beam and a laser hidden cutting laser beam; the processing chamber is used to perform deionization cleaning and drying treatment on the wafer before processing or the wafer after processing, or to perform film splitting treatment on the wafer after laser hidden cutting. The mechanical clamping device is used to clamp the wafer and place the wafer on the wafer positioning module; the wafer positioning module is used to fix the wafer and drive the wafer to move between the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station; the transmission module is used to transmit the wafer positioning module to the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station; and the matching optical device is used to adjust the laser grooving laser beam, the laser polishing laser beam or the laser hidden cutting laser beam in real time and irradiate it on the wafer, and perform single or multiple scans on the wafer at the same time.

[0006] The beneficial effects of the above technical solution are as follows: The present invention utilizes the high precision and fast directional removal capabilities of laser grooving, the defect removal and flattening capabilities of laser polishing, the internal micro-modification and crack directional expansion characteristics of laser hidden cutting, and the coordinated control of the wafer positioning module and the supporting optical device to achieve high-precision, high-quality cutting of the wafer, thereby replacing the traditional wafer scribing method of laser scribing + mechanical cutting, and has the advantages of fast cutting speed, high precision, and no tool / abrasive consumption.

[0007] Based on the further improvement of the above system, the matching optical device also includes a common optical path adjustment unit, a fourth optical path adjustment unit, and a first galvanometer scanning module, wherein the common optical path adjustment unit is located in the optical path of the matching optical device, and adjusts the laser beam emitted by the laser generating module to be directly above the laser grooving station and reaches the fourth optical path adjustment unit, wherein the optical path is adjusted by the common optical path adjustment unit to adapt to Gaussian or flat-top laser grooving laser beams, Gaussian or flat-top laser polishing laser beams, and Gaussian laser hidden cutting laser beams respectively; the fourth optical path adjustment unit is located between the common optical path adjustment unit and the first galvanometer scanning module, and is used to adjust to transmit Gaussian or flat-top laser grooving laser beams during the laser grooving process; the first galvanometer scanning module is located directly above the laser grooving station, and is used to control the size, direction, and grooving speed of the Gaussian or flat-top laser grooving laser beam after passing through the fourth optical path adjustment unit, so as to process a single V-groove and a rectangular groove or multiple V-grooves in an array parallel or cross-vertical manner on the surface of the wafer.

[0008] Based on further improvements of the above system, the matching optical device also includes a fifth optical path adjustment unit and a second galvanometer scanning module, wherein the fourth optical path adjustment unit is used to adjust the Gaussian or flat-top laser polishing laser beam to be reflected to the fifth optical path adjustment unit during the laser polishing process; the fifth optical path adjustment unit is located directly above the second galvanometer scanning module, and is used to adjust the Gaussian or flat-top laser polishing laser beam to be reflected to the second galvanometer scanning module during the laser polishing process; and the second galvanometer scanning module is located directly above the laser polishing station, and is used to control the size, direction and polishing speed of the Gaussian or flat-top laser polishing laser beam, so as to select polishing parameters according to the roughness, morphology and size of the bottom of the rectangular groove.

[0009] Based on further improvements of the above system, the matching optical device also includes a sixth optical path adjustment unit and an objective lens scanning module, wherein the fifth optical path adjustment unit is used to adjust the Gaussian laser hidden cutting laser beam from the fourth optical path adjustment unit to be transmitted to the sixth optical path adjustment unit during the laser hidden cutting process; the sixth optical path adjustment unit is located directly above the objective lens scanning module, and is used to adjust the Gaussian laser hidden cutting laser beam to be reflected to the objective lens scanning module during the laser hidden cutting process; and the objective lens scanning module is located directly above the laser hidden cutting station, and is used to control the focal length, direction and hidden cutting speed of the Gaussian laser hidden cutting laser beam, so that the wafer is cut along the polished rectangular groove.

[0010] Based on the further improvement of the above system, the laser grooving laser beam is used to remove the metal layer, polymer layer, oxide layer or low-K dielectric layer on the surface of the wafer, and to open one or more V-grooves and rectangular grooves with a width of 3-66μm and a depth of 1.5-12.6μm on the surface of the wafer; the laser grooving laser beam emits a Gaussian or flat-top laser grooving laser beam according to the change of the common optical path adjustment unit, wherein the laser grooving laser beam generates a flat-top laser grooving laser beam of appropriate size according to the width and depth of the V-groove; the laser polishing laser beam is used to quickly polish the The cracks, dirt, molten particles and burrs at the bottom of the rectangular groove, as well as the protruding structure existing in the rectangular groove are removed; the laser polishing laser beam generates a Gaussian or flat-top laser polishing laser beam of appropriate size according to the width and depth of the rectangular groove, so that the bottom of the groove-shaped scribe line becomes smooth and flat and its surface roughness Sa is less than 20nm; the laser hidden cutting laser beam is used to perform Gaussian laser irradiation deep into the wafer along the bottom of the polished rectangular groove. The Gaussian laser focus during the Gaussian laser irradiation process is focused inside the wafer, so that the wafer produces internal explosion points and micro cracks along the polished rectangular groove.

[0011] Based on the further improvement of the above system, the system for laser composite processing of wafers also includes a precision imaging monitoring module, which is electrically connected to the adaptive control device and is used to monitor the composite laser processing process in real time, wherein the precision imaging monitoring module is used to monitor the width and depth of the V-groove processed by the Gaussian laser grooving laser beam in real time during the laser grooving process, and determine the processing size and the number of passes required for the flat-top laser grooving laser beam according to the requirements of the rectangular groove; the precision imaging monitoring module is used to determine the position of the wafer, monitor whether there are cracks, dirt, molten particles, burrs at the bottom of the rectangular groove after laser grooving, and whether there are In the raised structure, the laser polishing parameters are adjusted according to the actual situation of cracks, dirt, fused particles, burrs or raised structures until the bottom of the groove line becomes smooth and flat and its surface roughness Sa is less than 20nm; the precision imaging monitoring module is used to record the image data of any processing process of laser grooving, laser polishing and laser hidden cutting and measure the macro / micro structure in the image, and measure the surface roughness of the groove bottom after laser grooving or laser polishing in real time; the precision imaging monitoring module is used to monitor in real time whether the wafer after laser grooving, laser polishing or laser hidden cutting has completed cutting.

[0012] On the other hand, an embodiment of the present invention provides a method for laser composite processing of wafers, comprising: controlling the movement of a laser generating module, a wafer positioning module, a matching optical device and a processing chamber under specific working conditions through an adaptive control device, and controlling the loading and unloading, positioning, processing or unloading operations of the wafer through a mechanical clamping device and the wafer positioning module; emitting a laser beam through the laser generating module, the laser beam comprising a laser grooving laser beam, a laser polishing laser beam and a laser hidden cutting laser beam, so as to form a single or multiple V-shaped grooves or rectangular grooves in an array parallel or cross-vertical manner and form explosion points and micro cracks inside the wafer; deionizing and drying the wafer before and after processing through the processing chamber The invention relates to a method for performing drying treatment and controlling the wafer after laser hidden cutting processing to crack the wafer; clamping the wafer by the mechanical clamping device and placing the wafer on the wafer positioning module; fixing the wafer by the wafer positioning module and driving the wafer to move between the laser grooving station, the laser polishing station, the laser hidden cutting station and the processing room station; transmitting the wafer positioning module to the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing room station by the transmission module; adjusting the laser grooving laser beam, the laser polishing laser beam or the laser hidden cutting laser beam in real time by the matching optical device and irradiating them on the wafer, and performing single or multiple scans on the wafer at the same time.

[0013] Based on the further improvement of the above method, the matching optical device includes a first galvanometer scanning module, a second galvanometer scanning module and an objective lens scanning module, wherein the speed, spot size, focal length and processing range of laser grooving, laser polishing and laser hidden cutting are controlled by the first galvanometer scanning module, the second galvanometer scanning module or the objective lens scanning module, and the size of the Gaussian laser beam and the flat-top laser beam are controlled at the same time; the roughness, macro / micro morphology / structure, and size of the wafer after laser grooving, laser polishing or laser hidden cutting are monitored and measured in real time by the precision imaging monitoring module, and the presence of cracks, dirt, molten particles, burrs and protruding structures are monitored; according to the real-time monitoring and measurement results, it is determined whether to adjust the processing parameters of the laser grooving-laser polishing-laser hidden cutting laser beam.

[0014] Based on the further improvement of the above method, before the step of moving the wafer on the wafer positioning module to the laser hidden cutting station, it also includes: controlling the mechanical clamping device to place the wafer on the wafer positioning module on the upper part of the conveying module to move the wafer positioning module to the laser grooving station; controlling the precision imaging monitoring module to detect the thickness of the metal layer, passivation layer or impurities on the surface of the wafer to determine the laser grooving parameters; controlling the laser generating module to emit a Gaussian laser grooving laser beam, and controlling the matching optical device to uniformly process a V-shaped groove on the surface of the wafer; detecting the thickness of the metal layer, passivation layer or impurities on the surface of the wafer through the precision imaging monitoring module ... detect the thickness of the metal layer, passivation layer or impurities on the surface of the wafer to determine the laser grooving parameters; controlling the laser generating module to detect the thickness of the metal layer, passivation layer or impurities on the surface of the wafer to determine the laser grooving parameters; controlling the laser generating module to detect the thickness of the metal layer, passivation layer or impurities on the surface of the wafer to determine the laser grooving parameters; controlling the laser generating module to detect the thickness of the metal layer, passivation layer or impurities on the surface of the wafer to determine the laser grooving parameters; controlling the The method comprises the steps of measuring the width, depth and shape of the V-groove to obtain a first measurement result; judging whether the V-groove on the surface of the wafer is qualified according to the first measurement result, wherein, if it is unqualified, controlling the laser generating module to emit a Gaussian laser grooving laser beam to continue to perform V-groove processing on the surface of the wafer; if it is qualified, executing the laser generating module to emit a flat-top laser grooving laser beam, and controlling the matching optical device to adjust the laser grooving parameters, and uniformly processing a rectangular groove on the V-groove on the surface of the wafer; continuing to detect the width and depth of the rectangular groove, as well as the surface roughness, shape and size of the groove bottom through the precision imaging monitoring module to obtain a second measurement result; judging whether the rectangular groove on the surface of the wafer is qualified according to the second measurement result, wherein, if it is unqualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser polishing station, controlling the laser polishing laser beam to select appropriate polishing parameters and laser beam shape according to the second measurement result, controlling the matching optical device to emit a flat-top laser polishing laser beam to perform high-speed polishing on the rectangular groove or to emit a Gaussian laser polishing laser beam to perform precision polishing and trimming on the rectangular groove, and monitoring the width, depth and The surface roughness of the groove bottom is monitored in real time to obtain a third measurement result; if qualified, the conveying module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station; whether the rectangular groove on the wafer surface is qualified is continued to be judged according to the third measurement result; if unqualified, the conveying module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser grooving station or the laser polishing station to repeat the laser grooving process or the laser polishing process; if qualified, the conveying module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station.

[0015] Based on the further improvement of the above method, after controlling the transmission module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station, it also includes: controlling the laser generating module to emit the laser hidden cutting laser beam, controlling the matching optical device to perform Gaussian hidden cutting laser beam irradiation deep into the wafer along the bottom of the rectangular groove, the focus of the Gaussian hidden cutting laser beam during the irradiation process is focused inside the wafer, so that the wafer generates internal explosion points and micro cracks along the rectangular groove; detecting the explosion points and micro cracks generated inside the wafer by the laser hidden cutting processing through the precision imaging monitoring module to obtain a fourth measurement result; judging whether the wafer after the laser hidden cutting processing meets the requirements of splitting according to the fourth measurement result, wherein, if the requirements are not met, controlling the laser generating module to emit the laser hidden cutting laser beam to adjust the laser parameters, and continuing to perform laser hidden cutting processing on the wafer; if the requirements are met, controlling the transmission module to drive the wafer positioning module, moving the wafer positioning module to the processing chamber station, controlling the processing chamber to select appropriate parameters, and performing film splitting processing on the wafer after the laser hidden cutting is completed.

[0016] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0017] 1. The present invention utilizes the high precision and fast directional removal capabilities of laser grooving, the defect removal and flattening capabilities of laser polishing, the internal microscopic modification and directional crack expansion characteristics of laser hidden cutting, and the coordinated control of the wafer positioning module and the supporting optical device to achieve high-precision and high-quality wafer cutting, thereby replacing the traditional wafer scribing method of laser scribing + mechanical cutting, and has the advantages of fast cutting speed, high precision, and no tool / abrasive consumption;

[0018] 2. By electrically connecting the laser generating module, the wafer positioning module, the conveying module, the mechanical clamping device, the supporting optical device and the processing chamber with the adaptive control device, the adaptive control device can simultaneously control the working state of the conveying module and the management and adjustment module, thereby controlling the supporting optical device and the wafer positioning module to move in coordination, which can ensure that the Gaussian or flat-top laser slotting laser beam, the Gaussian or flat-top laser polishing laser beam and the Gaussian laser hidden cutting laser beam are scanned on the wafer at a uniform speed, thereby reducing the processing defects such as cracks, fused particles and burrs on the chip surface after wafer cutting, and at the same time, ultra-thin thickness and ultra-small size chips can be achieved after cutting, thereby improving the cutting quality of the wafer;

[0019] 3. By setting up a control module, integrated control of the wafer cutting process is achieved, which reduces labor costs and improves the efficiency of the cutting process.

[0020] In the present invention, the above-mentioned technical solutions can also be combined with each other to achieve more preferred combination solutions. Other features and advantages of the present invention will be described in the subsequent description, and some advantages can become obvious from the description, or can be understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained through the contents particularly pointed out in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings are only for the purpose of illustrating particular embodiments and are not to be considered limiting of the present invention. Like reference symbols denote like components throughout the drawings.

[0022] Figure 1 A schematic structural diagram of a system for laser composite wafer processing according to an embodiment of the present invention performing laser scribing under the action of a Gaussian laser;

[0023] Figure 2 A schematic structural diagram of a system for laser composite processing of a wafer according to an embodiment of the present invention performing laser grooving under the action of a flat-top laser;

[0024] Figure 3 A schematic structural diagram of a system for laser composite processing of a wafer according to an embodiment of the present invention performing laser polishing under the action of a flat-top laser;

[0025] Figure 4 A schematic structural diagram of a system for laser composite processing of a wafer according to an embodiment of the present invention performing laser polishing under the action of a Gaussian laser;

[0026] Figure 5 A schematic structural diagram of a system for laser composite processing of wafers according to an embodiment of the present invention performing laser hidden cutting under the action of Gaussian laser;

[0027] Figure 6 It is a schematic cross-sectional view after laser scribing-laser grooving-laser polishing-laser hidden cutting according to an embodiment of the present invention;

[0028] Fig. 7A and Figure 7B They are respectively a linear laser three-dimensional confocal topography image and a linear profile image after laser scribing according to an embodiment of the present invention;

[0029] Fig. 8A and Figure 8B They are respectively a three-dimensional laser confocal topography image and a groove profile image of the groove after laser grooving according to an embodiment of the present invention;

[0030] Fig. 9A and Fig. 9B They are respectively a three-dimensional laser confocal topography image and a groove profile image of the groove after laser polishing according to an embodiment of the present invention;

[0031] Fig.10 is a scanning electron microscope morphology image of a wafer cross section after laser hidden cutting according to an embodiment of the present invention, wherein the scanning electron microscope morphology image of the wafer cross section corresponds to Figure 6 AA section view in;

[0032] Fig.11 The figure is a flow chart of a method for laser composite processing of a wafer according to an embodiment of the present invention.

[0033] Reference numerals:

[0034] 1. Laser generating module; 2. Adaptive control device; 3. Mechanical clamping device; 4. Processing chamber; 5. Transmission module; 6. Matching optical device; 61. First optical path adjustment unit; 62. Second optical path adjustment unit; 63. Third optical path adjustment unit; 64. Beam conversion module; 65. Fourth optical path adjustment unit; 66. Galvanometer scanning module; 67. Fifth optical path adjustment unit; 68. Objective scanning module; 69. Sixth optical path adjustment unit; 7. Wafer; 71. Wafer after laser scribing; 711. Scribed V-groove; 712. Residual band in the middle of the V-groove; 72. Wafer after laser grooving; 721. Rectangular groove; 722. Bottom of rectangular groove; 73. Wafer after laser polishing; 731. Polished rectangular groove; 732. Bottom of polished rectangular groove; 74. Wafer after laser hidden cutting; 741. Hidden cutting area; 742. Irradiation explosion point; 743. Micro cracks; 8. Precision imaging monitoring module; 9. Wafer positioning module. DETAILED DESCRIPTION

[0035] The preferred embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of this application and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not used to limit the scope of the present invention.

[0036] refer to Figure 1A specific embodiment of the present invention discloses a system for laser composite processing of wafers, including: an adaptive control device 2, used to control the movement of a laser generating module 1, a wafer positioning module 9, a conveying module 5, a matching optical device 6 and a processing chamber 4 under specific working conditions, and at the same time control the loading and unloading, positioning, processing or unloading operations of the wafer through a mechanical clamping device 3 and a wafer positioning module 9; a laser generating module 1, used to emit a laser beam, the laser beam including a laser grooving laser beam, a laser polishing laser beam and a laser hidden cutting laser beam; a processing chamber 4, used to deionize and dry the wafer before or after processing, or to The wafer after laser hidden cutting is subjected to film splitting treatment; the mechanical clamping device 3 is used to clamp the wafer and place the wafer on the wafer positioning module 9; the wafer positioning module 9 is used to fix the wafer and drive the wafer to move between the laser grooving station, laser polishing station, laser hidden cutting station or processing room station; the transmission module 5 is used to transmit the wafer positioning module 9 to the laser grooving station, laser polishing station, laser hidden cutting station or processing room station; and the matching optical device 6 is used to adjust the laser grooving laser beam, laser polishing laser beam or laser hidden cutting laser beam in real time and irradiate it on the wafer, and perform single or multiple scans on the wafer at the same time.

[0037] Compared with the prior art, the laser composite processing wafer system provided in this embodiment utilizes the high-precision and fast directional removal capabilities of laser grooving, the defect removal and flattening capabilities of laser polishing, the internal micro-modification and directional crack expansion characteristics of laser hidden cutting, and the coordinated control of the wafer positioning module and the supporting optical device to achieve high-precision and high-quality cutting of wafers, thereby replacing the traditional wafer scribing method of laser scribing + mechanical cutting, and has the advantages of fast cutting speed, high precision, and no tool / abrasive consumption.

[0038] In the following, reference Figures 1 to 5 , a system for laser composite processing of wafers according to an embodiment of the present invention is described in detail.

[0039] The adaptive control device 2 is used to control the movement of the laser generating module 1, the wafer positioning module 9, the transmission module 5, the supporting optical device 6 and the processing chamber 4 under specific working conditions, and at the same time controls the loading and unloading, positioning, processing or unloading operations of the wafer through the mechanical clamping device 3 and the wafer positioning module 9.

[0040] Specifically, the adaptive control device 2 is electrically connected to the laser generating module 1, the mechanical clamping device 3, the processing chamber 4, the transmission module 5, the matching optical device 6, the precision imaging monitoring module 8 and the wafer positioning module 9. The adaptive control device 2 is used to provide various control instructions, and the laser generating module 1, the mechanical clamping device 3, the processing chamber 4, the transmission module 5, the matching optical device 6, the precision imaging monitoring module 8 and the wafer positioning module 9 cooperate according to the various control instructions to perform laser grooving processing, laser polishing processing and laser hidden cutting processing on the wafer.

[0041] The laser generating module 1 is used to emit laser beams, including laser slotting laser beams, laser polishing laser beams and laser hidden cutting laser beams. Specifically, the laser generating module 1 generates and emits a Gaussian laser slotting laser beam or a square flat-top laser slotting laser beam according to the laser emission instruction from the adaptive control device 2 during the laser slotting process; generates and emits a Gaussian laser polishing laser beam or a square flat-top laser polishing laser beam during the laser polishing process; and generates and emits a Gaussian laser hidden cutting laser beam during the laser hidden cutting process.

[0042] The processing chamber 4 is used to perform deionization cleaning and drying treatment on the wafer before or after processing, or to perform film splitting treatment on the wafer after laser stealth cutting.

[0043] The mechanical clamping device 3 is used to clamp the wafer and place the wafer on the wafer positioning module 9 .

[0044] The wafer positioning module 9 is used to fix the wafer and drive the wafer to move between the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station.

[0045] The conveying module 5 is used to convey the wafer positioning module 9 to the laser grooving station, the laser polishing station, the laser stealth cutting station or the processing chamber station.

[0046] The matching optical device 6 is used to adjust the laser slotting laser beam, the laser polishing laser beam or the laser hidden cutting laser beam in real time and irradiate it on the wafer, and perform single or multiple scans on the wafer at the same time. The matching optical device 6 also includes a common optical path adjustment unit, a fourth optical path adjustment unit 65, a first galvanometer scanning module 66, a fifth optical path adjustment unit 67, a second galvanometer scanning module 66, a sixth optical path adjustment unit 69 and an objective lens scanning module 68.

[0047] The common optical path adjustment unit includes a first optical path adjustment unit 61, a second optical path adjustment unit 62, a third optical path adjustment unit 63 and a beam conversion module 64. The first optical path adjustment unit 61 includes a beam expander assembly and a reflector assembly; the second optical path adjustment unit 62 includes a reflector assembly and a beam splitter assembly; the third optical path adjustment unit 63 includes one or more reflectors to enable the light beam to accurately reach the beam conversion module 64; the beam conversion module 64 includes one or more beam shaping assemblies to enable the light beam to generate a flat-top beam with uniform quality. The common optical path adjustment unit is located in the optical path of the matching optical device 6, and adjusts the laser beam emitted by the laser generating module 1 to be directly above the laser slotting station and reach the fourth optical path adjustment unit 65, wherein the optical path is adjusted by the common optical path adjustment unit to adapt to Gaussian or flat-top laser slotting laser beam, Gaussian or flat-top laser polishing laser beam and Gaussian laser hidden cutting laser beam respectively.

[0048] refer to Figure 1 and Figure 2 In the process of laser slotting, the optical path of the supporting optical device 6 includes a common optical path adjustment unit, a fourth optical path adjustment unit 65 and a first galvanometer scanning module 66. Specifically, the fourth optical path adjustment unit 65 is located between the common optical path adjustment unit and the first galvanometer scanning module 66, and the fourth optical path adjustment unit 65 is adjusted to transmit a Gaussian or flat-top laser slotting laser beam during the laser slotting process. The first galvanometer scanning module 66 is located directly above the laser slotting station, and is used to control the size, direction and slotting speed of the Gaussian or flat-top laser slotting laser beam after passing through the fourth optical path adjustment unit 65, so as to process a single V-groove and a rectangular groove or multiple V-grooves in an array parallel or cross-vertical manner on the wafer surface. The laser slotting laser beam is used to remove the difficult-to-process surface layers such as the metal layer, polymer layer, oxide layer or low-K dielectric layer on the wafer surface, and to open one or more V-grooves and rectangular grooves with a width of 3-66μm and a depth of 1.5-12.6μm on the wafer surface; the laser slotting laser beam can produce a flat-top laser slotting laser beam of appropriate size according to the change of the width and depth of the V-groove through the common optical path adjustment unit. The V-grooves and rectangular grooves exist in an array parallel or cross-vertical manner.

[0049] refer to Figure 3 and Figure 4In the laser polishing process, the optical path of the supporting optical device 6 includes a common optical path adjustment unit, a fourth optical path adjustment unit 65, a fifth optical path adjustment unit 67 and a second galvanometer scanning module 66. Specifically, the fourth optical path adjustment unit 65 is used to adjust the Gaussian or flat-top laser polishing laser beam to be reflected to the fifth optical path adjustment unit 67 during the laser polishing process. The fifth optical path adjustment unit 67 is located directly above the second galvanometer scanning module 66, and the fifth optical path adjustment unit 67 is adjusted to be reflected to the Gaussian or flat-top laser polishing laser beam to the second galvanometer scanning module 66 during the laser polishing process. The second galvanometer scanning module 66 is located directly above the laser polishing station, and is used to control the size, direction and polishing speed of the Gaussian or flat-top laser polishing laser beam, so as to select the polishing parameters according to the roughness, morphology and size of the bottom of the rectangular groove. The laser polishing laser beam is used to quickly polish the cracks, dirt, molten particles and burrs at the bottom of the rectangular groove, and to remove the protruding structure existing in the rectangular groove; the laser polishing laser beam generates a Gaussian or flat-top laser polishing laser beam of appropriate size according to the width and depth of the rectangular groove, so that the bottom of the groove line becomes smooth and flat and its surface roughness Sa is less than 20nm.

[0050] refer to Figure 5 During the laser hidden cutting process, the optical path of the supporting optical device 6 includes a common optical path adjustment unit, a fourth optical path adjustment unit 65, a fifth optical path adjustment unit 67, a sixth optical path adjustment unit 69 and an objective lens scanning module 68. The fifth optical path adjustment unit 67 is used to adjust the Gaussian laser hidden cutting laser beam from the fourth optical path adjustment unit to be transmitted to the sixth optical path adjustment unit during the laser hidden cutting process; the sixth optical path adjustment unit 69 is located directly above the objective lens scanning module 68, and is used to adjust the Gaussian laser hidden cutting laser beam to be reflected to the objective lens scanning module 68 during the laser hidden cutting process. The objective lens scanning module is located directly above the laser hidden cutting station, and is used to control the focal length, direction and hidden cutting speed of the Gaussian laser hidden cutting laser beam, so that the wafer is cut along the polished rectangular groove. The laser hidden cutting laser beam is used to perform Gaussian laser irradiation deep into the wafer along the bottom of the polished rectangular groove. During the Gaussian laser irradiation process, the Gaussian laser focus is focused inside the wafer, so that the wafer produces internal explosion points and micro cracks along the polished rectangular groove.

[0051] The precision imaging monitoring module 8 is electrically connected to the adaptive control device 2, and moves the precision imaging monitoring module 8 following the wafer positioning module 9 according to the processing process to monitor the composite laser processing process in real time, that is, according to different instructions from the adaptive control device 2, the precision imaging monitoring module 8 moves to the vicinity of the laser grooving station, the laser polishing station, and the laser hidden cutting station to facilitate real-time monitoring of the laser grooving process, the laser polishing process, or the laser hidden cutting process in the composite laser processing. The precision imaging monitoring module 8 is used to monitor the width and depth of the V-groove processed by the Gaussian laser grooving laser beam in real time during the laser grooving process, and determine the processing size and the number of passes required for the flat-top laser grooving laser beam according to the requirements of the rectangular groove. The precision imaging monitoring module 8 is used to determine the position of the wafer, monitor whether there are cracks, dirt, fused particles, burrs, and protrusions at the bottom of the rectangular groove after laser grooving, wherein the laser polishing parameters are adjusted according to the actual conditions of the cracks, dirt, fused particles, burrs or protrusions until the bottom of the groove line becomes smooth and flat and its surface roughness Sa is less than 20nm. The precision imaging monitoring module 8 is used to record the image data of any of the laser grooving, laser polishing and laser hidden cutting processes and measure the macro / micro structure in the image, and measure the surface roughness of the groove bottom after laser grooving or laser polishing in real time. The precision imaging monitoring module 8 is used to monitor in real time whether the wafer after laser grooving, laser polishing or laser hidden cutting has been cut.

[0052] refer to Fig.11Another specific embodiment of the present invention discloses a method for laser composite processing of wafers, including: in step S111, controlling the movement of a laser generating module, a wafer positioning module, a matching optical device and a processing chamber under specific working conditions by an adaptive control device, and controlling the loading and unloading, positioning, processing or unloading operations of the wafer by a mechanical clamping device and a wafer positioning module; in step S112, emitting a laser beam by the laser generating module, the laser beam including a laser slotting laser beam, a laser polishing laser beam and a laser hidden cutting laser beam, so as to form an array of parallel or cross-vertical Single or multiple V-shaped grooves or rectangular grooves are cut in a certain manner and explosion points and micro cracks are formed inside the wafer; in step S113, the wafer before processing and the wafer after processing are deionized and cleaned and dried by the processing chamber, and the wafer after laser hidden cutting is controlled to be split; in step S114, the wafer is clamped by a mechanical clamping device and placed on a wafer positioning module; in step S115, the wafer is fixed by the wafer positioning module and driven to move between the laser grooving station, the laser polishing station, the laser hidden cutting station and the processing chamber station. At the laser grooving station, the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, the fourth optical path adjustment unit 65, and the galvanometer scanning module 66 are turned on, and other modules in the supporting optical device 6 are turned off to perform laser grooving; at the laser polishing station, the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, the fourth optical path adjustment unit 65, the galvanometer scanning module 66, and the fifth optical path adjustment unit 67 are turned on, and other modules in the supporting optical device 6 are turned off to perform laser polishing; at the laser hidden cutting station, the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, the fourth optical path adjustment unit 65, the fifth optical path adjustment unit 67, the objective lens scanning module 68, and the sixth optical path adjustment unit 69 are turned on, and other modules in the supporting optical device 6 are turned off to perform laser hidden cutting.

[0053] In step S116, the wafer positioning module is transported to the laser grooving station, laser polishing station, laser hidden cutting station or processing chamber station through the transport module; in step S117, the laser grooving laser beam, laser polishing laser beam or laser hidden cutting laser beam is adjusted in real time through the matching optical device and irradiated onto the wafer, and a single or multiple scans are performed on the wafer at the same time.

[0054] The supporting optical device includes a first galvanometer scanning module, a second galvanometer scanning module and an objective lens scanning module. The speed, spot size, focal length and processing range of laser grooving, laser polishing and laser hidden cutting are controlled by the first galvanometer scanning module, the second galvanometer scanning module or the objective lens scanning module, and the size of Gaussian laser beam and flat-top laser beam are controlled at the same time. For example, the processing speed includes 122mm / s, 267mm / s, 345mm / s, 698mm / s, 896mm / s, 1115mm / s, etc.; the spot size includes 2.1μm, 3.6μm, 4.4μm , 5.8μm, 6.9μm, 10.9μm, etc.; the focal length includes 5.2mm, 8.5mm, 12.6mm, 16.9mm, 18.3mm, 22.9mm, etc.; the processing range includes 2 inches, 4 inches, 8 inches, 12 inches, etc.; the size of the Gaussian laser beam and the flat-top laser beam is determined by the size diameter of the slot size; the precision imaging monitoring module is used to monitor and measure in real time the roughness (less than Sa 20nm), macro / micro morphology / structure, and size of the wafer after laser slotting, laser polishing or laser hidden cutting, as well as the presence of cracks, dirt, molten particles, burrs, and protruding structures; according to the real-time monitoring and measurement results, it is determined whether to adjust the processing parameters of the laser slotting-laser polishing-laser hidden cutting laser beam, such as adjusting the laser scanning speed, laser power, laser frequency, laser shape, etc.

[0055] Before the step of moving the wafer on the wafer positioning module to the laser hidden cutting station, the step also includes: controlling the mechanical clamping device to place the wafer on the wafer positioning module on the upper part of the conveying module to move the wafer positioning module to the laser grooving station; controlling the precision imaging monitoring module to detect the thickness of the metal layer, passivation layer or impurities on the surface of the wafer to determine the laser grooving parameters; controlling the laser generating module to emit a Gaussian laser grooving laser beam, and controlling the matching optical device to uniformly process a V-groove on the surface of the wafer; detecting the width, depth and shape of the V-groove through the precision imaging monitoring module to obtain a first measurement result; to determine whether the V-groove on the wafer surface is qualified according to the first measurement result, wherein, if it is unqualified, the laser generating module is controlled to emit a Gaussian laser grooving laser beam to continue to process the V-groove on the wafer surface; if it is qualified, the laser generating module is executed to emit a flat-top laser grooving laser beam, and the matching optical device is controlled to adjust the laser grooving parameters, and a rectangular groove is uniformly processed on the V-groove on the wafer surface; the width and depth of the rectangular groove, as well as the surface roughness, morphology and size of the groove bottom are continuously detected by the precision imaging monitoring module to obtain a second The method comprises the following steps: measuring the wafer surface of the wafer and determining whether the rectangular groove on the wafer surface is qualified according to the second measurement result, wherein if the rectangular groove on the wafer surface is unqualified, the transmission module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser polishing station, the laser polishing laser beam is controlled to select appropriate polishing parameters and laser beam shape according to the second measurement result, the matching optical device is controlled to emit a flat-top laser polishing laser beam to perform high-speed polishing on the rectangular groove or to emit a Gaussian laser polishing laser beam to perform precision polishing and trimming on the rectangular groove, and the width, depth and surface roughness of the bottom of the rectangular groove are monitored in real time through the precision imaging monitoring module to obtain a third measurement result; if the rectangular groove on the wafer surface is qualified, the transmission module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station; the method continues to judge whether the rectangular groove on the wafer surface is qualified according to the third measurement result, and if the rectangular groove on the wafer surface is unqualified, the transmission module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser grooving station or the laser polishing station to repeat the laser grooving process or the laser polishing process; if the rectangular groove on the wafer surface is qualified, the transmission module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station.

[0056] After controlling the transmission module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station, it also includes: controlling the laser generating module to emit a laser hidden cutting laser beam, controlling the matching optical device to perform Gaussian hidden cutting laser beam irradiation deep into the wafer along the bottom of the rectangular groove, wherein the focus of the Gaussian hidden cutting laser beam during the irradiation process is focused inside the wafer, so that the wafer generates internal explosion points and micro cracks along the rectangular groove; detecting the explosion points and micro cracks generated inside the wafer by the laser hidden cutting processing through the precision imaging monitoring module to obtain a fourth measurement result; judging whether the wafer after the laser hidden cutting processing meets the requirements of splitting according to the fourth measurement result, wherein, if the requirements are not met, controlling the laser generating module to emit a laser hidden cutting laser beam to adjust the laser parameters, and continuing to perform laser hidden cutting processing on the wafer; if the requirements are met, controlling the transmission module to drive the wafer positioning module, moving the wafer positioning module to the processing chamber station, controlling the processing chamber to select appropriate parameters, and performing film splitting processing on the wafer after the laser hidden cutting is completed.

[0057] In the following, reference Figures 1 to 10 , a system for laser composite processing of wafers according to an embodiment of the present invention is described in detail by way of a specific example.

[0058] refer to Figure 1 The laser generating module 1, the wafer positioning module 9, the conveying module 5, the mechanical clamping device 3, the matching optical device 6 and the processing chamber 4 are all electrically connected to the adaptive control device 2; at the same time, the precision imaging monitoring module 8, the galvanometer scanning module 66 and the objective lens scanning module 68 are also electrically connected to the adaptive control device 2.

[0059] The adaptive control device 2 controls the mechanical clamping device 3 to place the wafer 7 on the wafer positioning module 9. At the same time, the adaptive control device 2 controls the conveying module 5 to drive the wafer positioning module 9 to move the wafer 7 to the processing chamber 4 to clean and dry the wafer 7.

[0060] After the cleaning and drying process, the adaptive control device 2 controls the precision imaging monitoring module 8 to detect the thickness of the metal layer, the passivation layer or the impurities on the surface of the wafer 7, so as to determine the laser parameters for the laser grooving.

[0061] The adaptive control device 2 controls the conveying module 5 to drive the wafer positioning module 9 to move the wafer 7 to the position directly below the galvanometer scanning module 66, and adjusts the optical path of the matching optical device 6 to adapt to the laser beam of the laser grooving.

[0062] It should be noted that the laser generating module 1 first adjusts the first optical path adjusting unit 61, the second optical path adjusting unit 62, the third optical path adjusting unit 63, the beam conversion module 64, and the fourth optical path adjusting unit 65 in the optical path through the matching optical device 6, and emits a Gaussian laser slotting laser beam through the galvanometer scanning module 66 to determine the slotting area and path, and first draws the line and then slots, which can clarify the boundary, control the slot width, and prevent excessive erosion. At this time, the laser beam can be a 12-30W 513nm, 516nm, 525nm, 531nm, 547nm, 556nm femtosecond or picosecond Gaussian laser beam, as well as nanosecond Gaussian laser beams of other wavelengths.

[0063] Therefore, in this embodiment, two adjacent V-shaped grooves are firstly cut on the surface of the wafer, and the schematic diagram thereof is shown in FIG. Figure 6 After laser scribing, a wafer 71 will have a scribing V-groove 711 and a residual band 712 in the middle of the V-groove. The specific three-dimensional morphology and size can be seen in Fig. 7A Although in Figure 7B The width of the middle scribed V-groove is about 5-12μm, and the depth is about 7-9μm. However, it should be pointed out that the width and depth of the scribed V-groove are determined according to the chip positions and metal layers, passivation layers or impurities distributed on the wafer. This determination method can be detected by the precision imaging monitoring module 8, so its width and depth are controllable, in order to better guide the subsequent flat-top laser grooving laser beam to accurately groove in this shallow groove.

[0064] After the laser marking is completed, the adaptive control device 2 controls the precision imaging monitoring module 8 to detect the width and depth of the V-groove of the marking, and the detection data can be transmitted back to the adaptive control device 2 to determine the grooving parameters of the flat-top laser grooving laser beam emitted by the laser generating module 1, so as to better remove the residual band 712 in the middle of the V-groove. The schematic structural diagram of the laser system of this embodiment performing laser grooving under the action of the flat-top laser (see Figure 2 ), the laser generating module 1 adjusts the light path through the matching optical device 6 and the beam conversion module 64 passes through the galvanometer scanning module 66 to emit the flat-top laser grooving laser beam. Figure 6 In the wafer 72 after laser grooving, a rectangular groove 721 appears after laser grooving under the action of a flat-top laser.

[0065] Since the laser beam removes the residual band 712 in the middle of the V-shaped groove by ablation and vaporization during the grooving process, most of the ablated material will not be discharged from the rectangular groove 721, making it easy for the bottom 722 of the rectangular groove to have poor morphology and poor roughness. The specific three-dimensional morphology and size of the groove after this embodiment can be seen in Fig. 8A , although in Figure 8BThe width of the middle-line rectangular groove is about 53μm and the depth is about 11.5μm. However, it should be pointed out that the width and depth of the rectangular groove are determined according to the chip positions and metal layers, passivation layers or impurities distributed on the wafer. This determination method can be detected by the precision imaging monitoring module 8, so its width and depth are controllable in order to better guide subsequent wafer cutting.

[0066] After the laser grooving is completed, the precision imaging monitoring module 8 will detect the width and depth of the rectangular groove, as well as the surface roughness of the groove bottom. When the roughness is less than Sa 20nm, the wafer 72 can be laser cut.

[0067] If the groove width, groove depth and groove bottom roughness do not meet the requirements, the adaptive control device 2 will control the transmission module 5 to drive the wafer positioning module 9 to move the wafer 72 to the right below the galvanometer scanning module 66, and adjust the optical path of the matching optical device 6 to adapt to the laser beam of laser polishing. It should be noted that the laser generating module 1 adjusts the optical path through the matching optical device 6, and emits a Gaussian or flat-top laser polishing laser beam through the galvanometer scanning module 66. The Gaussian laser beam has good quality and a small focusing diameter, and can be finely polished. The flat-top laser has a large focusing diameter and can be quickly polished over a large area. There is no order between the two, and they are determined according to the groove width, groove depth and the roughness of the groove bottom.

[0068] In this embodiment, the groove bottom is first flattened by laser polishing. The schematic structural diagram of the laser system performing laser polishing under the action of the flattened laser is shown in FIG. Figure 3 The laser generating module 1 adjusts the first optical path adjusting unit 61, the second optical path adjusting unit 62, the third optical path adjusting unit 63, the beam conversion module 64, the fourth optical path adjusting unit 65 and the fifth optical path adjusting unit 67 in the optical path through the matching optical device 6 to emit a flat-top laser polishing laser beam through the galvanometer scanning module 66 to laser polish the bottom of the groove. In this process, the groove width, groove depth and the roughness of the groove bottom are also detected in real time by the precision imaging monitoring module 8.

[0069] Then, the laser generating module 1 adjusts the beam conversion module 64 through the matching optical device 6 to emit a Gaussian laser polishing laser beam, and performs Gaussian laser polishing on the groove bottom and groove wall, so that the rectangular groove is finely finished. The process is also carried out by the precision imaging monitoring module 8 to detect the groove width, groove depth and groove bottom roughness in real time to ensure the qualification of the rectangular groove. The schematic structure diagram of the laser system performing laser polishing under the action of Gaussian laser is shown in FIG. Figure 4 , see the schematic diagram after polishing Figure 6 The three-dimensional morphology and size of the wafer 73 in the substrate can be seen in Fig. 9A .

[0070] Can be obtained from Fig. 9BIn the embodiment, it can be seen that the structure and morphology of the polished rectangular groove 731 are more complete and the groove wall is smoother than that of the rectangular groove 721, and the roughness of the bottom 732 of the polished rectangular groove is flatter and smoother than that of the bottom 722 of the rectangular groove, and the cracks, dirt, fused particles, burrs and protrusions of the bottom 722 of the rectangular groove disappear. At this time, the precision imaging monitoring module 8 is used to detect the groove width, groove depth and the roughness of the groove bottom in real time to verify whether the process requirements of laser hidden cutting are met. Because internal cracking depends on the smooth entry of the laser into the wafer, surface defects will reduce the incident efficiency.

[0071] It should be pointed out that during the laser cutting process, the laser irradiation will produce nonlinear absorption effect inside the wafer, which will cause local plasma generation and microstructural damage inside the wafer, see Figure 6 Wafer 74 after laser hidden cutting. With repeated irradiation of laser pulses, periodically distributed micro cracks 743 and irradiation explosion points 742 are formed inside the wafer. After multiple scans, the internal crack areas will gradually expand and connect with each other, eventually forming a macroscopically visible incision, achieving hidden cutting. Figure 6 Hidden cutting area 741. Compared with traditional laser cutting, hidden cutting mainly relies on laser-induced internal stress and cracking phenomenon rather than thermal effect, which can reduce the thermal damage area. By controlling the laser parameters, the position of internal cracking can be accurately controlled. Hidden cutting avoids splashing debris during cutting and achieves high-precision cutting without post-processing.

[0072] Therefore, if the wafer 74 meets the requirements of laser hidden cutting after laser polishing, the present embodiment will perform laser hidden cutting under the action of Gaussian laser, and its schematic structure diagram is shown in FIG. Figure 5. The laser generating module 1 adjusts the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, the fourth optical path adjustment unit 65, the fifth optical path adjustment unit 67 and the sixth optical path adjustment unit 69 in the optical path through the matching optical device 6 to perform laser hidden cutting through the objective lens scanning module 68. The non-destructive hidden cutting effect is achieved by adjusting the pulse width, wavelength, focus position and other parameters of the laser generating module 1. At this time, the laser hidden cutting generates explosion points and micro cracks inside the wafer through the precision imaging monitoring module 8 to determine whether the wafer 74 after hidden cutting can meet the requirements of splitting; if the requirements are not met, the laser generating module 1 is controlled to emit a laser hidden cutting laser beam to adjust the laser parameters to continue laser invisible processing of the wafer 74. If the requirements are met, the transmission module 5 is controlled to drive the wafer positioning module 9, and the wafer positioning module 9 is moved to the processing chamber 4 station, and the processing chamber 4 is controlled to select appropriate parameters to perform film splitting processing on the wafer 74 after the laser hidden cutting is completed. The steps of film bracket cracking include: positioning and alignment, pasting film expansion, flattening and degassing, film bracketing, and inspection. The wafer is placed on the workbench of the film expander, and the correct position and direction are ensured by the positioning and alignment system. Next, the film expansion film is evenly pasted, usually using materials with adhesiveness and high temperature resistance such as polyimide. Through the flattening and degassing system of the film expander, the film expansion film is tightly attached to the surface of the wafer, and air bubbles are removed. Usually, appropriate pressure and heat treatment are applied, and the wafer is bracketed and cracked as needed. Finally, the wafer after bracketing is inspected to confirm visually or using a microscope whether there are cracks or fragments. If cracks or fragments are found, the wafer needs to be cleaned to remove particles and impurities on the surface. Chemical solutions and ultrasonic cleaning equipment can be used. Then rinse thoroughly to remove residual cleaning agents and contaminants, and deionized water or other pure water is often used. The schematic scanning electron microscope morphology of the cross-section of the wafer after bracket cracking is shown in the figure Fig.10 shown.

[0073] Those skilled in the art will appreciate that all or part of the processes of the above-mentioned embodiments can be implemented by instructing related hardware through a computer program, and the program can be stored in a computer-readable storage medium, wherein the computer-readable storage medium is a disk, an optical disk, a read-only storage memory, or a random access memory, etc.

[0074] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by any technician familiar with the technical field within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention.

Claims

1. A system for laser composite processing of wafers, It is characterized in that include: An adaptive control device, used to control the movement of the laser generating module, the wafer positioning module, the conveying module, the supporting optical device and the processing chamber under specific working conditions, and at the same time control the loading and unloading, positioning, processing or unloading operations of the wafer via the mechanical clamping device and the wafer positioning module; The laser generating module is used to emit laser beams, wherein the laser beams include laser grooving laser beams, laser polishing laser beams and laser hidden cutting laser beams; The processing chamber is used to perform deionization cleaning and drying on the wafer before or after processing, or to perform film splitting on the wafer after laser stealth cutting; The mechanical clamping device is used to clamp the wafer and place the wafer on the wafer positioning module; The wafer positioning module is used to fix the wafer and drive the wafer to move between the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station; The conveying module is used to convey the wafer positioning module to the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station; and The matching optical device is used to adjust the laser grooving laser beam, the laser polishing laser beam or the laser cutting laser beam in real time and irradiate it onto the wafer, while performing single or multiple scans on the wafer.

2. The system for laser composite processing of wafers according to claim 1, It is characterized in that The matching optical device also includes a common optical path adjustment unit, a fourth optical path adjustment unit, and a first galvanometer scanning module, wherein: The common optical path adjustment unit is located in the optical path of the matching optical device, and adjusts the laser beam emitted by the laser generating module to be directly above the laser slotting station and reaches the fourth optical path adjustment unit, wherein the optical path is adjusted by the common optical path adjustment unit to be adapted to Gaussian or flat-top laser slotting laser beam, Gaussian or flat-top laser polishing laser beam and Gaussian laser hidden cutting laser beam respectively; The fourth optical path adjustment unit is located between the common optical path adjustment unit and the first galvanometer scanning module, and is used to adjust the laser beam to transmit Gaussian or flat-top laser slotting during the laser slotting process; The first galvanometer scanning module is located directly above the laser grooving station and is used to control the size, direction and grooving speed of the Gaussian or flat-top laser grooving laser beam after passing through the fourth optical path adjustment unit, so as to process a single V-groove and a rectangular groove or multiple V-grooves in an array in parallel or cross-vertical manner on the surface of the wafer.

3. The system for laser composite processing of wafers according to claim 2, It is characterized in that The matching optical device also includes a fifth optical path adjustment unit and a second galvanometer scanning module, wherein: The fourth optical path adjustment unit is used to adjust the laser beam of Gaussian or flat-top laser polishing to be reflected to the fifth optical path adjustment unit during the laser polishing process; The fifth optical path adjustment unit is located directly above the second galvanometer scanning module and is used to adjust the laser beam of the Gaussian or flat-top laser polishing to be reflected to the second galvanometer scanning module during the laser polishing process; and The second galvanometer scanning module is located directly above the laser polishing station and is used to control the size, direction and polishing speed of the Gaussian or flat-top laser polishing laser beam to select polishing parameters according to the roughness, morphology and size of the bottom of the rectangular groove.

4. The system for laser composite processing of wafers according to claim 3, It is characterized in that The matching optical device also includes a sixth optical path adjustment unit and an objective lens scanning module, wherein: The fifth optical path adjustment unit is used to adjust the Gaussian laser hidden cutting laser beam from the fourth optical path adjustment unit to be transmitted to the sixth optical path adjustment unit during the laser hidden cutting process; The sixth optical path adjustment unit is located directly above the objective lens scanning module and is used to adjust the Gaussian laser hidden cutting laser beam to be reflected to the objective lens scanning module during the laser hidden cutting process; and The objective lens scanning module is located directly above the laser hidden cutting station and is used to control the focal length, direction and hidden cutting speed of the Gaussian laser hidden cutting laser beam so that the wafer is cut along the polished rectangular groove.

5. The system for laser composite processing of wafers according to claim 4, It is characterized in that The laser grooving laser beam is used to remove the metal layer, polymer layer, oxide layer or low-K dielectric layer on the surface of the wafer, and to open one or more V-grooves and rectangular grooves with a width of 3-66 μm and a depth of 1.5-12.6 μm on the surface of the wafer; the laser grooving laser beam emits a Gaussian or flat-top laser grooving laser beam according to the change of the common optical path adjustment unit, wherein the laser grooving laser beam generates a flat-top laser grooving laser beam of a suitable size according to the width and depth of the V-groove; The laser polishing laser beam is used to quickly polish the cracks, dirt, fused particles and burrs at the bottom of the rectangular groove, and remove the protruding structure existing in the rectangular groove; the laser polishing laser beam generates a Gaussian or flat-top laser polishing laser beam of appropriate size according to the width and depth of the rectangular groove, so that the bottom of the groove-shaped scribe line becomes smooth and flat with a surface roughness Sa < 20nm; The laser hidden cutting laser beam is used for Gaussian laser irradiation deep into the wafer along the bottom of the polished rectangular groove. During the Gaussian laser irradiation process, the Gaussian laser focus is focused inside the wafer, so that internal explosion points and micro cracks are generated on the wafer along the polished rectangular groove.

6. The system for laser composite processing of wafers according to claim 5, It is characterized in that It also includes a precision imaging monitoring module, which is electrically connected to the adaptive control device and is used to monitor the composite laser processing process in real time, wherein: The precision imaging monitoring module is used to monitor the width and depth of the V-shaped groove processed by the Gaussian laser grooving laser beam in real time during the laser grooving process, and determine the processing size and the number of passes required for the flat-top laser grooving laser beam according to the requirements of the rectangular groove; The precision imaging monitoring module is used to determine the position of the wafer, monitor whether there are cracks, dirt, fused particles, burrs, and protrusions at the bottom of the rectangular groove after laser grooving, wherein the laser polishing parameters are adjusted according to the actual situation of the cracks, dirt, fused particles, burrs or protrusions until the bottom of the groove line becomes smooth and flat and its surface roughness Sa is less than 20nm; The precision imaging monitoring module is used to record the image data in any of the laser grooving, laser polishing and laser hidden cutting processes and measure the macro / micro structure in the image, and measure the surface roughness of the groove bottom after laser grooving or laser polishing in real time; The precision imaging monitoring module is used to monitor in real time whether the wafer after laser grooving, laser polishing or laser hidden cutting has been cut.

7. A method for laser composite processing of wafers, It is characterized in that include: The laser generating module, the wafer positioning module, the supporting optical device and the processing chamber are controlled to move under specific working conditions by an adaptive control device, and the loading and unloading, positioning, processing or unloading operations of the wafer are controlled by a mechanical clamping device and the wafer positioning module; The laser generating module emits a laser beam, wherein the laser beam includes a laser grooving laser beam, a laser polishing laser beam and a laser hidden cutting laser beam, so as to form a single or multiple V-shaped grooves or rectangular grooves in an array parallel or cross-vertical manner and form explosion points and micro cracks inside the wafer; The processing chamber is used to perform deionization cleaning and drying on the wafer before and after processing, and at the same time, the wafer after laser hidden cutting is subjected to film splitting control; Clamp the wafer by the mechanical clamping device and place the wafer on the wafer positioning module; Fix the wafer by the wafer positioning module and drive the wafer to move between the laser grooving station, the laser polishing station, the laser hidden cutting station and the processing chamber station; The wafer positioning module is transported to the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station by a transport module; The laser grooving laser beam, the laser polishing laser beam or the laser cutting laser beam is adjusted in real time by a matching optical device and irradiated onto the wafer, and a single or multiple scans are performed on the wafer at the same time.

8. The method for laser composite processing of wafer according to claim 7, It is characterized in that The matching optical device includes a first galvanometer scanning module, a second galvanometer scanning module and an objective lens scanning module, wherein: The speed, spot size, focal length and processing range of laser grooving, laser polishing and laser hidden cutting are controlled by the first galvanometer scanning module, the second galvanometer scanning module or the objective lens scanning module, and the size of the Gaussian laser beam and the flat-top laser beam are controlled at the same time; The precision imaging monitoring module is used to monitor and measure in real time the roughness, macro / micro morphology / structure, and size of wafers after laser grooving, laser polishing, or laser hidden cutting, as well as the presence of cracks, dirt, fused particles, burrs, and protruding structures. Based on the real-time monitoring and measurement results, it is determined whether to adjust the processing parameters of the laser grooving-laser polishing-laser hidden cutting laser beam.

9. The method for laser composite processing of wafer according to claim 8, It is characterized in that Before the step of moving the wafer on the wafer positioning module to the laser hidden cutting station, the step further includes: Controlling the mechanical clamping device to place the wafer on a wafer positioning module on the upper part of the conveying module, so as to move the wafer positioning module to the laser slotting station; Controlling the precision imaging monitoring module to detect the thickness of the metal layer, the passivation layer or the impurities on the surface of the wafer to determine the laser grooving parameters; Controlling the laser generating module to emit a Gaussian laser slotting laser beam, and controlling the matching optical device to uniformly process a V-shaped groove on the surface of the wafer; Detecting the width, depth and shape of the V-shaped groove by the precision imaging monitoring module to obtain a first measurement result; According to the first measurement result, it is judged whether the V-groove on the surface of the wafer is qualified, wherein, if it is unqualified, the laser generating module is controlled to emit a Gaussian laser grooving laser beam to continue to process the V-groove on the surface of the wafer; if it is qualified, the laser generating module is executed to emit a flat-top laser grooving laser beam, and the matching optical device is controlled to adjust the laser grooving parameters, so as to uniformly process a rectangular groove on the V-groove on the surface of the wafer; Continue to detect the width and depth of the rectangular groove, and the surface roughness, morphology and size of the groove bottom by the precision imaging monitoring module to obtain a second measurement result; According to the second measurement result, it is judged whether the rectangular groove on the surface of the wafer is qualified, wherein, if it is unqualified, the transmission module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser polishing station, and the laser polishing laser beam is controlled to select appropriate polishing parameters and laser beam shape according to the second measurement result, and the matching optical device is controlled to emit a flat-top laser polishing laser beam to perform high-speed polishing on the rectangular groove or emit a Gaussian laser polishing laser beam to perform precision polishing and trimming on the rectangular groove, and the width, depth and surface roughness of the bottom of the rectangular groove are monitored in real time by the precision imaging monitoring module to obtain a third measurement result; if it is qualified, the transmission module is controlled to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station; Continue to judge whether the rectangular groove on the wafer surface is qualified according to the third measurement result. If it is unqualified, control the transmission module to drive the wafer positioning module to move the wafer positioning module to the laser grooving station or the laser polishing station to repeat the laser grooving process or the laser polishing process; if it is qualified, control the transmission module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station.

10. The method for laser composite processing of wafer according to claim 9, It is characterized in that After controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station, the method further includes: Control the laser generating module to emit the laser hidden cutting laser beam, control the matching optical device to irradiate the Gaussian hidden cutting laser beam deep into the wafer along the bottom of the rectangular groove, and focus the Gaussian hidden cutting laser beam inside the wafer during the irradiation process, so that the wafer generates internal explosion points and micro cracks along the rectangular groove; Detecting the explosion points and micro cracks generated inside the wafer by laser hidden cutting processing through the precision imaging monitoring module to obtain a fourth measurement result; According to the fourth measurement result, it is judged whether the wafer after laser hidden cutting meets the requirement of splitting, wherein: If the requirement is not met, the laser generating module is controlled to emit the laser hidden cutting laser beam to adjust the laser parameters, and the laser hidden cutting process is continued on the wafer; If the requirements are met, the conveying module is controlled to drive the wafer positioning module, the wafer positioning module is moved to the processing chamber station, the processing chamber is controlled to select appropriate parameters, and the wafer after laser hidden cutting is completed is subjected to film splitting processing.

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