Reactive gas supply device of deposition equipment for semiconductor manufacturing

Abstract

The present invention relates to a reaction gas supply device of a deposition apparatus for semiconductor manufacturing, comprising: a showerhead that passes through a lead provided in a chamber; a first flow path assembly connected to an inflow port formed in the center of the upper surface of the showerhead and supplying a reaction gas to the center of the showerhead; and a second flow path assembly which is connected to flow path holes formed at a plurality of positions in the radial direction of the upper surface of the showerhead, and which supplies a reaction gas to the plurality of positions in the radial direction of the showerhead. Therefore, the reaction gas can be supplied and adjusted to the central part of the showerhead and a plurality of kinds of positions, and the deposition uniformity of the surface of the wafer can be improved.

Description

Technical Field

[0001] The present invention relates to a reaction gas supply device for a deposition apparatus used in semiconductor manufacturing, and more particularly to a reaction gas supply device for a deposition apparatus used in semiconductor manufacturing that can improve the deposition uniformity on the surface of a wafer. Background Art

[0002] Generally, a deposition apparatus for semiconductor manufacturing includes: a chamber providing a sealed space to the outside; a door opening and closing the chamber; a showerhead disposed inside the door and diffusing and supplying a reaction gas to the entire upper surface of a wafer; a heater, etc., disposed inside the chamber facing the showerhead to support the wafer.

[0003] In addition, the deposition apparatus for semiconductor manufacturing is connected with a vacuum apparatus for forming a vacuum in the chamber, a high-frequency power apparatus for forming a plasma between the showerhead and the heater, a gas supply apparatus for supplying a reaction gas to the showerhead, etc.

[0004] The reaction gas is supplied to the showerhead through a gas inlet formed at the center of the upper surface, and the reaction gas is discharged to the upper surface of the wafer through discharge holes formed in the entire lower surface.

[0005] Therefore, the showerhead discharges a relatively large amount of reaction gas to the discharge holes in the central portion closer to the gas inlet compared to the discharge holes in the outer portion in the radial direction, and thus there is a problem that the deposition uniformity between the central portion and the outer portion of the wafer is different.

[0006] In addition to the above reason (the difference in the supply amount of the reaction gas according to the radial position of the showerhead), due to various factors affecting deposition such as the internal pressure of the chamber, the plasma concentration, and the reaction gas flow rate, there is a problem that the deposition uniformity on the surface of the wafer is reduced.

[0007] The prior art is the technical information owned by the inventor for deriving the present invention or obtained during the process of deriving the present invention, and is not necessarily the prior art publicly known to the general public before the application of the present invention.

[0008] Prior Art Documents

[0009] Patent Documents

[0010] (Patent Document 1) Korean Patent No. 10-0918677 (authorized on September 16, 2009) Summary of the Invention

[0011] Technical Problem

[0012] In the process of solving the above problems, an object of the present invention is to provide a reaction gas supply device for a semiconductor manufacturing deposition apparatus that can supply reaction gas to the central part and various multiple positions of a showerhead and adjust it, and can improve the deposition uniformity on the wafer surface.

[0013] The problems to be solved by the present invention are not limited to the above-mentioned problems, and those skilled in the art to which the present invention pertains can clearly understand other technical problems to be solved that are not mentioned through the following description.

[0014] Solutions to the problems

[0015] The reaction gas supply device for a semiconductor manufacturing deposition apparatus according to an embodiment of the present invention includes: a showerhead, a lead wire penetratingly provided in a chamber; a first flow path assembly connected to an inlet formed in the center of the upper surface of the showerhead to supply reaction gas to the center of the showerhead; and a second flow path assembly connected to flow path holes formed in multiple positions in the radial direction of the upper surface of the showerhead to supply reaction gas to multiple positions in the radial direction of the showerhead.

[0016] The above-mentioned first flow path assembly includes: a first inlet pipe connected to a reaction gas supply hole formed in the lead wire; a first connection pipe connected to the first inlet pipe; and a connection member connecting the first connection pipe and the inlet of the showerhead.

[0017] In the above-mentioned connection member, a reaction gas flow path connecting the first connection pipe and the inlet of the showerhead is formed in the vertical direction at the center, a through hole is formed in the radial direction at a middle height and is connected to the reaction gas flow path at the inner end, and a washing gas flow path opening to the outside of the connection member is formed at the outer end.

[0018] In the above-mentioned first flow path assembly, the first inlet pipe is vertically provided on the upper surface of the lead wire, and the first connection pipe horizontally connects the upper end of the first inlet pipe and the upper side surface of the connection member.

[0019] The above-mentioned second flow path assembly includes: a second inlet pipe connected to a reaction gas supply hole different from the reaction gas supply hole formed in the lead wire and connected to the first flow path assembly; a second connection pipe connected to the second inlet pipe; a distribution member connected to the second connection pipe; a plurality of branch pipes branching from the distribution member; and a plurality of discharge pipes connecting the branch pipes and the plurality of flow path holes.

[0020] The above-mentioned flow path holes are formed in multiple positions along the circumferential direction of the showerhead.

[0021] The above-mentioned flow path holes can be formed at one position each in the inner part, the middle part, and the outer part along the radial direction of the showerhead.

[0022] The above-mentioned dispensing member is fixedly provided on the upper surface of the connecting member of the above-mentioned first flow path assembly.

[0023] In the above-mentioned second flow path assembly, the above-mentioned second inlet pipe is vertically provided on the upper surface of the above-mentioned lead, the above-mentioned second connecting pipe horizontally connects the upper end of the above-mentioned second inlet pipe and the central portion of the upper surface of the above-mentioned dispensing member, the above-mentioned branch pipe is horizontally connected to the side surface of the above-mentioned dispensing member, and the above-mentioned discharge pipe is vertically connected to the end of the above-mentioned branch pipe and the above-mentioned flow path hole of the above-mentioned nozzle.

[0024] MFCs (mass flow controllers) for controlling the flow rate of the reaction gas are respectively provided in the reaction gas supply flow paths connected to the above-mentioned first flow path assembly and the above-mentioned second flow path assembly.

[0025] Valves for controlling the flow rate of the reaction gas are respectively provided in the above-mentioned multiple branch pipes of the above-mentioned second flow path assembly.

[0026] Advantages of the Invention

[0027] As described above, the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to the present invention can supply and adjust the reaction gas to the central portion and various multiple positions of the nozzle, and can improve the deposition uniformity of the wafer surface.

[0028] The effects of the present invention are not limited to the above-mentioned effects, and those of ordinary skill in the technical field to which the present invention pertains can clearly understand other effects not mentioned through the following description. Description of the Drawings

[0029] Figure 1 It is a front view of the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to an embodiment of the present invention.

[0030] Figure 2 It is Figure 1 a top view.

[0031] Figure 3 It is a sectional view taken along line III-III of Figure 2 the same.

[0032] Figure 4 It is a view for explaining the connection structure between the second flow path assembly and the nozzle as a structure of the deposition equipment for semiconductor manufacturing according to an embodiment of the present invention.

[0033] (Description of Reference Numerals)

[0034] 10: Chamber 20: Lead

[0035] 25: Guide Ring 30: Nozzle

[0036] 31: Inlet 32: Flow path hole

[0037] 33: Discharge hole 34: Bolt groove

[0038] 35: Sealing groove 40: First flow path assembly

[0039] 41: First inlet pipe 42: First connecting pipe

[0040] 43: Connecting component 43a: Reaction gas flow path

[0041] 43b: Washing gas flow path 50: Second flow path assembly

[0042] 51: Second inlet pipe 52: Second connecting pipe

[0043] 53: Distribution component 54(54a, 54b, 54c): Branch pipe

[0044] 55(55a, 55b, 55c): Discharge pipe

[0045] 100: Flange component 101: Pipe connection part

[0046] 110: Bolt 120: Insulator Detailed implementation mode

[0047] In the present invention, for the sake of distinctiveness from the prior art, clarity, and ease of mastering the technology, the drawings are somewhat exaggerated. Moreover, the following terms are defined in consideration of the functions in the present invention and may vary according to the intentions or conventions of users and operators. Therefore, these terms should be defined by the technical content throughout this specification. Additionally, the embodiments are only illustrative matters of the structural elements disclosed in the claims of the present invention and do not limit the scope of the rights of the present invention. The scope of rights should be interpreted according to the technical concept throughout the specification of the present invention.

[0048] Throughout the specification, when referring to a structure "including" another structure, unless there is a particularly contrary record, it means that other structures may also be included, rather than excluding other structures.

[0049] Furthermore, when referring to a structure "connected", "coupled", or "combined" to another structure, it not only refers to the case of "directly connected", "directly coupled", or "directly combined", but also refers to the case of "connected with other structures intervening between the two", "coupled with other structures intervening between the two", or "combined with other structures intervening between the two". On the contrary, when referring to a structure "directly connected", "directly coupled", or "directly combined" to another structure, it should be understood that there are no other structures in between.

[0050] In addition, when directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", and "both ends" are used, these are terms illustratively used for the orientation of the disclosed drawings. Therefore, they cannot be restrictively interpreted. When terms such as "first" and "second" are used, they are terms for distinguishing each structure and cannot be restrictively interpreted.

[0051] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well-known to those of ordinary skill in the art belonging to the technical field of the following embodiments will be omitted. Also, in the drawings, detailed descriptions of parts irrelevant to the description of the embodiments will be omitted.

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0053] Figure 1 It is a front view of a reaction gas supply device of a deposition apparatus for semiconductor manufacturing according to an embodiment of the present invention. Figure 2 It is Figure 1 a top view of Figure 3 It is a cross-sectional view taken along line III-III of Figure 2 Figure 4 It is a view for explaining a connection structure between a second flow path assembly and a showerhead as a structure of a deposition apparatus for semiconductor manufacturing according to an embodiment of the present invention.

[0054] Referring to Figures 1 to 4 , a reaction gas supply device of a deposition apparatus for semiconductor manufacturing according to an embodiment of the present invention includes a showerhead 30, a first flow path assembly 40, and a second flow path assembly 50.

[0055] The above-mentioned showerhead 30 is penetrated and provided on a lead 20 of a chamber 10. The above-mentioned chamber 10 is a process chamber for performing a deposition process, and has the above-mentioned closable lead 20 at the upper part.

[0056] The above-mentioned chamber 10 is connected to a vacuum pump, and a vacuum atmosphere can be formed inside. Also, the above-mentioned chamber 10 is connected to a high-frequency power device, and a plasma is formed inside, which can make the deposition caused by the chemical reaction of the reaction gas more active.

[0057] On the upper surface center of the above-mentioned showerhead 30, an inlet 31 for the reaction gas to flow in is formed to protrude upward. The above-mentioned first flow path assembly 40 is connected to the inlet 31, and can supply the reaction gas to the center of the above-mentioned showerhead 30.

[0058] On the upper surface of the above-mentioned showerhead 30, flow path holes 32 are formed at a plurality of positions in the radial direction and the circumferential direction. The above-mentioned second flow path assembly 50 is connected to the flow path holes 32, and can supply the reaction gas to a plurality of positions in the radial direction of the above-mentioned showerhead 30. ​

[0059] The above-mentioned nozzle 30 is generally cylindrical in shape as a whole, and a gas diffusion space connected to the above-mentioned inflow port 31 is formed inside.

[0060] A plurality of discharge holes 33 are formed on the lower surface of the above-mentioned nozzle 30, and the reaction gas inside the above-mentioned nozzle 30 can be supplied to the internal space of the above-mentioned chamber 10.

[0061] A guide ring 25 is provided between the peripheral portion of the above-mentioned nozzle 30 and the nozzle setting hole formed in the above-mentioned lead 20. The above-mentioned guide ring 25 seals the gap between the above-mentioned lead 20 and the above-mentioned nozzle 30 and can perform the function of electrical insulation together.

[0062] The above-mentioned first flow path assembly 40 is a flow path structure that connects a reaction gas source and the above-mentioned inflow port 31 formed at the center of the upper surface of the above-mentioned nozzle 30.

[0063] The above-mentioned first flow path assembly 40 includes: a first inflow pipe 41 connected to a reaction gas supply hole (not shown) formed on one side of the upper surface of the above-mentioned lead 20; a first connection pipe 42 connected to the above-mentioned first inflow pipe 41; and a connection member 43 connecting the above-mentioned first connection pipe 42 and the above-mentioned inflow pipe 31 of the above-mentioned nozzle 30.

[0064] The above-mentioned first inflow pipe 41 is vertically provided on the upper surface of the above-mentioned lead 20, and the above-mentioned first connection pipe 42 horizontally connects the upper end of the above-mentioned first inflow pipe 41 and the upper side surface of the above-mentioned connection member 43.

[0065] Among them, the reaction gas supply hole formed in the above-mentioned lead 20 is the outlet side end of the reaction gas supply flow path that penetrates the above-mentioned lead 20 or is formed inside the main body of the above-mentioned lead 20 and the above-mentioned chamber 30. The above-mentioned reaction gas supply flow path is connected to a reaction gas source independently provided from the deposition equipment and can supply reaction gas.

[0066] Moreover, a mass flow controller (MFC, Mass Flow Controller) is provided on the inlet side of the above-mentioned reaction gas supply flow path, which can measure the mass flow rate of the reaction gas supplied to the above-mentioned first flow path assembly 40 and control the flow rate.

[0067] The above-mentioned connection member 43 is a cylindrical member connected to the upper part of the above-mentioned inflow port 31 of the above-mentioned nozzle 30, and a reaction gas flow path 43a and a washing gas flow path 43b are formed.

[0068] The above-mentioned reaction gas flow path 43a is formed in the central part of the above-mentioned connection member 43 in the vertical direction. The first connection pipe 42 is connected to the upper part, and the lower part is open and connected to the above-mentioned inlet 31 of the above-mentioned nozzle 30. That is, the above-mentioned first connection pipe 42 can horizontally connect the upper end of the above-mentioned first inflow pipe 41 and the upper side surface of the above-mentioned connection member 43.

[0069] The above-mentioned washing gas flow path 43b is formed in the radial direction through the substantially middle height of the above-mentioned connection member 43. The inner end is connected to the above-mentioned reaction gas flow path 43a, and the outer end is open to the outside of the above-mentioned connection member 43 and can be connected to a washing gas supply pipe (not shown).

[0070] Therefore, the reaction gas is supplied to the inside of the above-mentioned nozzle 30 through the above-mentioned first inflow pipe 41, the above-mentioned first connection pipe 42, the above-mentioned reaction gas flow path 43a, and the above-mentioned inlet 31.

[0071] And, the washing gas can be supplied to the inside of the above-mentioned nozzle 30 through the above-mentioned washing gas flow path 43b, the above-mentioned reaction gas flow path 43a, and the above-mentioned inlet 31. The above-mentioned washing gas is supplied to the inside of the above-mentioned chamber 10 before and after the deposition process, and functions to remove contaminants on the upper surface of the wafer.

[0072] The above-mentioned second flow path assembly 50 is a flow path structure for connecting a reaction gas source and the above-mentioned flow path holes 32 formed at multiple positions on the upper surface of the above-mentioned nozzle 30 (except for the central part where the inlets 31 are formed).

[0073] The above-mentioned second flow path assembly 50 includes: a second inflow pipe 51, which is connected to a reaction gas supply hole (not shown) formed on one side of the upper surface of the above-mentioned lead 20 (a proximity part to the position where the above-mentioned first inflow pipe 41 of the above-mentioned first flow path assembly 40 is connected); a second connection pipe 52, which is connected to the above-mentioned second inflow pipe 51; a distribution member 53, which is connected to the above-mentioned second connection pipe 52; a plurality of branch pipes 54, which branch from the above-mentioned distribution member 53; and a plurality of discharge pipes, which connect the above-mentioned branch pipes 54 and the above-mentioned flow path holes 32 formed at multiple positions on the upper surface of the above-mentioned nozzle 30.

[0074] Among them, the above reaction gas supply hole is the outlet part of a reaction gas supply flow path separately provided for the reaction gas supply flow path of the above first flow path component 40 (formed by penetrating through the inside of the main body of the above chamber 10 and the above lead 20), and is connected to a reaction gas source through the above reaction gas supply flow path. On the inlet side of this reaction gas supply flow path, there is an MFC for the above second flow path component 50 that is separate from the MFC of the above first flow path component 40, and the flow rate of the reaction gas supplied to the above second flow path component 50 can be controlled. That is, the above first flow path component 40 and the above second flow path component 50 each have an MFC. Since the MFC is a device widely used for controlling flow rate, the detailed description of its detailed structure is omitted.

[0075] The above second inlet pipe 51 is vertically provided on the upper surface of the above lead 20, and the above second connecting pipe 52 horizontally connects the upper end of the above second inlet pipe 51 and the above distribution component 53. At this time, the above second connecting pipe 52 is connected to the central part of the upper surface of the above distribution component 53, which is beneficial to uniformly distributing the reaction gas in the above distribution component 53 by using the above multiple branch pipes 54.

[0076] The above distribution component 53 is fixedly provided on the upper surface of the above connecting component 43 of the above first flow path component 40, but no flow path is formed between the above distribution component 53 and the above connecting component 43, and the reaction gas does not flow between them.

[0077] The above branch pipes 54 are connected to the side surface of the above distribution component 53 in a horizontal state, and the above discharge pipes 55 vertically connect the ends of the above branch pipes 54 and the above flow path holes 32 of the above nozzle 30.

[0078] As Figure 2 shown, the above flow path holes 32 can be respectively formed on a plurality of concentric circles L1, L2, L3 having different radii with respect to the center of the upper surface of the above nozzle 30 ( Figure 2 The above flow path holes 32 are not directly shown in the figure, but the installation positions of the discharge pipes 55, 55a, 55b, 55c can be presumed to be the formation positions of the above flow path holes 32).

[0079] For example, the above concentric circles L1, L2, L3 are respectively lines indicating the inner part, the middle part, and the outer part from the center of the upper surface of the above nozzle 30 to the outer side in the radial direction, and the above flow path holes 32 can be formed on one side of each of the above concentric circles L1, L2, L3. That is, the above flow path holes 32 can be formed one each in the inner part, the middle part, and the outer part along the radial direction of the above nozzle 30.

[0080] The discharge pipes 55a, 55b, and 55c are provided in a manner connected to the respective flow path holes 32 described above, and the respective branch pipes 54a, 54b, and 54c formed with different lengths connect between the upper ends of the respective discharge pipes 55a, 55b, and 55c and the distribution member 53.

[0081] In this way, the plurality of discharge pipes 55a, 55b, and 55c are connected to the plurality of flow path holes 32 formed at different positions in the radial direction and circumferential direction of the nozzle 30, and reaction gas can be supplied to various positions inside the nozzle 30.

[0082] In the figure, an embodiment is illustrated in which there are three of the branch pipes 54 and the discharge pipes 55, and the branch pipes 54a, 54b, and 54c are connected to the outer peripheral surface of the distribution member 53 at equal intervals (120° intervals). However, the number and arrangement angles of the branch pipes 54 and the discharge pipes 55 can be freely set according to the design intention.

[0083] The discharge pipe 55 is connected to the flow path hole 32 as Figure 4 shown in the structure. A flange member 100 is provided at the lower end of the discharge pipe 55. A pipe connection portion 101 connected to the lower end of the discharge pipe 55 is formed at the center of the flange member 100, and the pipe connection portion 101 and the central portion of the flange member 100 are formed to penetrate in the vertical direction.

[0084] A plurality of bolt holes (not shown in the figure, which can be in a form with a side open) into which bolts 110 can be inserted are formed in the peripheral portion of the flange member 100.

[0085] Correspondingly, the flow path hole 32 connected to the discharge pipe 55 is formed to penetrate the upper surface of the nozzle 30, and a bolt groove 34 for inserting and fastening the bolt 110 is formed around the flow path hole 32 (corresponding one-to-one to the bolt holes of the flange member 100). And a seal groove 35 for inserting and setting a seal member may be formed between the flow path hole 32 and the bolt groove 34.

[0086] Among them, the bolt groove 34 and the seal groove 35 are formed at a predetermined depth on the upper surface of the nozzle 30 without penetrating the upper surface of the nozzle 30. In contrast, the flow path hole 32 is formed to penetrate the upper surface of the nozzle 30 so that the reaction gas discharged from the discharge pipe 55 can flow into the nozzle 30.

[0087] Therefore, with the flange member 100 provided at the lower end of the discharge pipe 55 positioned on the upper surface of the flow path hole 32, in this state, the plurality of bolts 110 can be inserted into the bolt holes of the flange member 100 and screwed to the bolt grooves 34 of the nozzle 30 to connect the discharge pipe 55 to the flow path hole 32 of the nozzle 30.

[0088] At this time, before the bolt tightening operation, a seal is placed in the seal groove 35 in a placed manner, which can prevent gas leakage at the connection part.

[0089] Moreover, a disk-shaped insulator 120 is provided between the upper surfaces of the flange member 100 and the nozzle 30, which can electrically insulate between the discharge pipe 55 and the nozzle 30, that is, between the second flow path assembly 50 and the nozzle 30. At this time, the insulator 120 is also formed with bolt holes having the same number as the bolts 110.

[0090] On the other hand, each of the branch pipes 54a, 54b, 54c can be provided with respective valves V1, V2, V3 for independently opening and closing the corresponding pipes (refer to Figure 3 ). In this way, each of the branch pipes 54a, 54b, 54c has the valves V1, V2, V3, and can selectively open and close the plurality of branch pipes 54a, 54b, 54c. Therefore, the amount of reaction gas supplied to the inside of the nozzle 30 can be controlled in a more diverse manner according to different positions on the plane of the nozzle 30.

[0091] Therefore, the amount of reaction gas supplied to the upper surface of the wafer can be diversely controlled according to different positions on the wafer surface. In this regard, by increasing the supply amount of reaction gas to the part where the deposition rate is lower compared to another part and reducing the supply amount of reaction gas to the part where the deposition rate is too high, the overall deposition uniformity of the wafer surface can be improved.

[0092] In this regard, the function and effect of the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to an embodiment of the present invention will be described.

[0093] The reaction gas supply device according to an embodiment of the present invention further includes the second flow path assembly 50 in addition to the first flow path assembly 40. Therefore, reaction gas is supplied to the central part of the nozzle 30 through the first flow path assembly 40, and reaction gas is additionally supplied to various places in the radial direction and circumferential direction of the nozzle 30 through the second flow path assembly 50.

[0094] Therefore, the reaction gas supply device according to an embodiment of the present invention solves the problem of supplying a small amount of reaction gas to the outer part in the radial direction relative to the central part of the wafer, and improves the deposition uniformity of the wafer.

[0095] In addition, the second flow path component 50 described above has the plurality of branch flow paths (formed by the branch pipes 54a, 54b, 54c and the discharge pipes 55a, 55b, 55c). The lengths or the angles between the plurality of branch flow paths are implemented in various ways, and the amount of reaction gas supplied to the wafer can be variably adjusted according to different positions on the wafer surface.

[0096] In addition, the MFCs respectively connected to the first flow path component 40 and the second flow path component 50 and the valves V1, V2, V3 respectively provided in the branch flow paths are controlled in various states, and the amount of reaction gas supplied to the wafer can be more finely adjusted according to different positions on the wafer surface.

[0097] Therefore, for the various deposition states that may occur differently according to process conditions (such as chamber internal pressure, plasma concentration, reaction gas flow rate, etc.), the amount of reaction gas at different surface positions of the wafer can be adjusted to improve the deposition uniformity of the wafer.

[0098] As described above, the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to the present invention can supply and adjust the reaction gas to the central part and various positions of the shower head to improve the deposition uniformity on the wafer surface.

[0099] As described above, the present invention has been described with reference to the embodiments shown in the drawings, but this is only an illustration. It should be understood that various modifications and equivalent other embodiments can be made according to the common knowledge in the technical field. Therefore, the true technical protection scope of the present invention should be based on the appended claims and defined according to the specific content of the above invention.

[0100] Industrial Applicability

[0101] The present invention relates to a reaction gas supply device of a deposition equipment for semiconductor manufacturing, and can be used in the industrial fields related to deposition equipment for semiconductor manufacturing using a shower head.

Claims

1. A reaction gas supply device for a deposition device for semiconductor manufacturing, characterized in that: include: A nozzle, which passes through a lead wire disposed in the chamber; a first flow path component connected to an inlet formed at the center of the upper surface of the shower head and supplying a reaction gas to the center of the shower head; and The second flow path member is connected to flow path holes formed at a plurality of positions in the radial direction of the upper surface of the shower head, and supplies the reaction gas to a plurality of positions in the radial direction of the shower head.

2. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 1, characterized in that: The first flow path component comprises: a first inflow pipe connected to a reaction gas supply hole formed in the lead wire; a first connecting pipe connected to the first inflow pipe; and A connecting component connects the first connecting pipe and the inlet of the nozzle.

3. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 2, characterized in that: In the above-mentioned connecting component, a reaction gas flow path connecting the above-mentioned first connecting pipe and the above-mentioned inlet of the above-mentioned nozzle is formed in the center portion in the upward and downward directions, a cleaning gas flow path is formed at the middle height in the radial direction and is connected to the above-mentioned reaction gas flow path by the inner end, and a cleaning gas flow path opening to the outside of the above-mentioned connecting component is formed at the outer end.

4. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 2, characterized in that: In the first flow path assembly, the first inflow pipe is vertically disposed on the upper surface of the lead wire, and the first connecting pipe horizontally connects the upper end of the first inflow pipe and the upper side surface of the connecting component.

5. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 2, characterized in that: The second flow path component comprises: a second inlet pipe connected to a reaction gas supply hole different from the reaction gas supply hole formed in the lead and connected to the first flow path component; A second connecting pipe connected to the second inflow pipe; A distribution component connected to the second connecting pipe; a plurality of branch pipes branching from the distribution component; and A plurality of discharge pipes connect the branch pipes and the plurality of flow path holes.

6. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 5, characterized in that: The flow path holes are formed at a plurality of positions along a circumferential direction of the nozzle.

7. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 5, characterized in that: The flow path hole is formed at one position each in the inner part, the middle part and the outer part along the radial direction of the nozzle.

8. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 5, characterized in that: The distribution component is fixedly disposed on an upper surface of the connection component of the first flow path assembly.

9. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 5, characterized in that: In the above-mentioned second flow path assembly, the above-mentioned second inlet pipe is vertically arranged on the upper surface of the above-mentioned lead, the above-mentioned second connecting pipe horizontally connects the upper end of the above-mentioned second inlet pipe and the central part of the upper surface of the above-mentioned distribution component, the above-mentioned branch pipe is horizontally connected to the side surface of the above-mentioned distribution component, and the above-mentioned discharge pipe vertically connects the end of the above-mentioned branch pipe and the above-mentioned flow path hole of the above-mentioned nozzle.

10. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 5, characterized in that: The reaction gas supply flow paths connected to the first flow path assembly and the second flow path assembly are respectively provided with mass flow controllers for controlling the flow rate of the reaction gas.

11. The reaction gas supply device of the deposition equipment for semiconductor manufacturing according to claim 10, characterized in that: The plurality of branch pipes of the second flow path assembly are respectively provided with valves for controlling the flow rate of the reaction gas.

Images