Reactive gas supply device of deposition equipment for semiconductor manufacturing

Abstract

The present invention relates to a reaction gas supply device of a deposition apparatus for semiconductor manufacturing, the device comprising: a nozzle disposed through a cavity lead; a flow path assembly connected to an inflow port formed in the center of the upper surface of the showerhead so as to supply a reaction gas to the center of the showerhead; and an internal flow path formed on the inner side of the upper surface of the showerhead so as to supply the reaction gas to the outer side of the showerhead in the radial direction. Therefore, the reaction gas can be smoothly supplied not only to the central part of the wafer, but also to the outer side part in the radial direction, thereby improving the deposition uniformity of the surface of the wafer.

Description

Technical Field

[0001] The present invention relates to a reaction gas supply device for a deposition apparatus used in semiconductor manufacturing, and more particularly, to a reaction gas supply device for a deposition apparatus used in semiconductor manufacturing that can improve the deposition uniformity of the surface of a wafer. Background Art

[0002] Generally, a deposition apparatus for semiconductor manufacturing includes: a chamber that provides a sealed space to the outside; a lead for opening and closing the chamber; a showerhead disposed inside the lead to diffuse and supply a reaction gas to the entire upper surface of the wafer; and a heater disposed inside the chamber facing the showerhead to support the wafer.

[0003] In addition, a vacuum device for forming a vacuum in the chamber, a high-frequency power device for forming a plasma between the showerhead and the heater, a gas supply device for supplying a reaction gas to the showerhead, etc. are connected and provided in the deposition apparatus for semiconductor manufacturing.

[0004] The showerhead receives the supply of the reaction gas through a gas inlet formed at the center of the upper surface, and discharges the reaction gas to the upper surface of the wafer through discharge holes formed in the entire lower surface.

[0005] Therefore, the showerhead discharges relatively more reaction gas to the discharge holes in the central portion closer to the gas inlet compared to the discharge holes in the outer portion in the radial direction, so there is a problem that the deposition uniformity between the central portion and the outer portion of the wafer is different.

[0006] In addition to the above reason (the difference in the supply amount of the reaction gas according to the radial position of the showerhead), various factors affecting deposition such as the internal pressure of the chamber, the plasma concentration, and the reaction gas flow rate also cause a decrease in the deposition uniformity of the wafer surface.

[0007] The prior art is the technology retained by the inventor to derive the present invention, or the technical information obtained during the process of deriving the present invention, and is not necessarily the publicly known technology publicly disclosed to the general public before the application of the present invention.

[0008] Prior Art Documents

[0009] Patent Documents

[0010] Patent Document 1: Korean Patent No. 10-0918677 (Authorization Date: September 16, 2009) Summary of the Invention

[0011] Technical Problem

[0012] In order to solve the problems described above, an object of the present invention is to provide a reaction gas supply device for a deposition apparatus used in semiconductor manufacturing, which can smoothly supply reaction gas not only to the central portion of a wafer but also to the outer portion in the radial direction, thereby improving the deposition uniformity on the wafer surface.

[0013] The problems to be solved by the present invention are not limited to the problems mentioned above, and those skilled in the art to which the present invention pertains can clearly understand other technical problems to be solved that are not mentioned through the following description.

[0014] Solution to the problem

[0015] A reaction gas supply device for a deposition apparatus used in semiconductor manufacturing according to an embodiment of the present invention includes: a showerhead, which is penetrated and provided on a cavity lead; a flow path assembly, which is connected to a flow inlet formed at the center of the upper surface of the showerhead to supply reaction gas to the center of the showerhead; and an internal flow path, which is formed on the inner side of the upper surface of the showerhead to supply the reaction gas to the outer portion in the radial direction of the showerhead.

[0016] Moreover, the flow path assembly includes: an inflow pipe, which is connected to a reaction gas supply hole formed on the lead; a connection pipe, which is connected to the inflow pipe; and a connection member, which is used to connect the connection pipe and the flow inlet of the showerhead.

[0017] Moreover, a reaction gas flow path for connecting the connection pipe and the flow inlet of the showerhead is formed in the central portion of the connection member in the vertical direction, and a cleaning gas flow path is formed to penetrate in the radial direction at an intermediate height. The inner end of the cleaning gas flow path is connected to the reaction gas flow path, and its outer end opens to the outside of the connection member.

[0018] Moreover, in the flow path assembly, the inflow pipe is vertically provided on the upper surface of the lead, and the connection pipe horizontally connects the upper end of the inflow pipe and the upper side surface of the connection member.

[0019] Moreover, in the flow path assembly, a mass flow controller (MFC) for controlling the flow rate of the reaction gas is provided on the reaction gas supply flow path connected to the flow path assembly.

[0020] Moreover, a plurality of the internal flow paths are formed radially with the flow inlet of the showerhead as the center.

[0021] Moreover, in the internal flow path, the inner end opens to the flow inlet to form an inlet hole, and the bottom surface of the portion adjacent to the outer end penetrates downward to form an outlet hole.

[0022] Further, in the internal flow path, a plurality of them are formed radially outward from the flow inlet and are equally spaced along the circumferential direction of the showerhead. In the adjacent portion at the radially outer end of the internal flow path, a circular circumferential flow path is formed over the entire circumferential direction of the showerhead, and the circumferential flow path has a structure that opens downward over the entire circumferential direction.

[0023] Effects of the Invention

[0024] As described above, the reaction gas supply device of the deposition apparatus for semiconductor manufacturing according to the present invention can smoothly supply the reaction gas not only to the central portion of the wafer but also to the radially outer portion, thereby improving the deposition uniformity on the wafer surface.

[0025] The effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those of ordinary skill in the technical field to which the present invention pertains through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 The front view of the reaction gas supply device of the deposition apparatus for semiconductor manufacturing according to an embodiment of the present invention.

[0027] Figure 2 is Figure 1 top view of.

[0028] Figure 3 is according to Figure 2 sectional view taken along line III-III of.

[0029] Figure 4 is a view showing the bottom surface by horizontally cutting the internal flow path forming portion (the middle portion of the upper plate) of the showerhead which is a component of the reaction gas supply device of the deposition apparatus for semiconductor manufacturing according to an embodiment of the present invention.

[0030] Figure 5 is the bottom view of the upper plate of the showerhead.

[0031] Figure 6 and Figure 7 are respectively the Figure 4 and Figure 5 corresponding views, and are views showing other embodiments of the internal flow path.

[0032] (Description of Reference Numerals)

[0033] 10: Chamber 20: Lead

[0034] 25: Guide Ring 30: Showerhead

[0035] 31: Flow Inlet 32: Discharge Hole

[0036] 33: Internal flow path 33a: Inlet hole

[0037] 33b: Outlet hole 40: Flow path component

[0038] 41: Inflow pipe 42: Connecting pipe

[0039] 43: Connecting component 43a: Reaction gas flow path

[0040] 43b: Cleaning gas flow path Detailed implementation mode

[0041] In the present invention, for the sake of distinctiveness, clarity from the prior art and ease of grasping the technology, the drawings are exaggerated. Moreover, the following terms are defined in consideration of the functions in the present invention and may vary according to the intentions or conventions of users and operators. Therefore, these terms should be defined by the technical content throughout this specification. In addition, the embodiments are only illustrative matters of the structural elements disclosed in the claims of the present invention and do not limit the scope of rights of the present invention. The scope of rights should be interpreted according to the technical idea throughout the specification of the present invention.

[0042] Throughout the specification, when referring to a structure "including" another structure, unless there is a particularly contrary record, it means that other structures may also be included, rather than excluding other structures.

[0043] In addition, when referring to a structure "connected", "coupled" or "combined" to another structure, it not only refers to the case of "directly connected", "directly coupled" or "directly combined", but also refers to the case of "connected with other structures intervening therebetween", "coupled with other structures intervening therebetween" or "combined with other structures intervening therebetween". On the contrary, when referring to a structure "directly connected", "directly coupled" or "directly combined" to another structure, it should be understood that there are no other structures in between.

[0044] In addition, when using directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends", etc., these are terms used illustratively for the orientation of the disclosed drawings. Therefore, they cannot be restrictively interpreted. When using terms such as "first", "second", etc., they are terms used to distinguish each structure and cannot be restrictively interpreted.

[0045] In order to more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well-known to those of ordinary skill in the art belonging to the technical field of the following embodiments will be omitted. And in the drawings, detailed descriptions of parts irrelevant to the description of the embodiments will be omitted.

[0046] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0047] Figure 1 The front view of the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to an embodiment of the present invention Figure 2 is Figure 1 the top view of Figure 3 is according to Figure 2 the sectional view taken along line III-III of Figure 4 is a view showing the bottom surface by horizontally cutting the internal flow path forming part (the middle part of the upper plate) of the showerhead which is a component of the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to an embodiment of the present invention Figure 5 is the bottom view of the upper plate of the showerhead. And Figure 6 and Figure 7 are respectively the corresponding views of the Figure 4 and Figure 5 and are views showing other embodiments of the internal flow path

[0048] Referring to Figures 1 to 5 the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to an embodiment of the present invention includes a showerhead 30, a flow path assembly 40 and an internal flow path 33

[0049] The showerhead 30 is penetrated and arranged on the lead 20 of the cavity 10. That is, the showerhead 30 is inserted and installed in the circular showerhead setting hole formed on the lead 20. At this time, the upper surface of the showerhead 30 is exposed outside the lead 20, and the lower surface (bottom surface) is in contact with the inner space of the cavity 10

[0050] The cavity 10 is a process cavity for performing a deposition process, and the lead 20 which can be opened and closed is arranged on its upper part

[0051] And the cavity 10 is connected to a vacuum pump and can form a vacuum atmosphere inside

[0052] And the cavity 10 is connected to a high-frequency power device and can form a plasma inside, so that the deposition caused by the chemical reaction of the reaction gas can be carried out more actively

[0053] And in the showerhead 30, a flow inlet 31 protruding upward is formed at the center of the upper surface, and the reaction gas flows in. The flow path assembly 40 is connected to the flow inlet 31

[0054] The showerhead 30 is generally cylindrical as a whole, and a gas diffusion space connected to the flow inlet 31 is formed inside it

[0055] A plurality of discharge holes 32 are formed on the lower surface of the showerhead 30, and the reaction gas inside the showerhead 30 (the gas diffusion space) can be supplied to the inner space of the cavity 10

[0056] A circular guide ring 25 is provided between the peripheral portion of the nozzle 30 and the nozzle setting hole formed on the lead 20. The guide ring 25 can not only seal the gap between the lead 20 and the nozzle 30, but also perform the function of electrical insulation at the same time.

[0057] The internal flow path 33 is a plurality of flow paths formed inside the upper surface of the nozzle 30 and is radially formed centering on the flow inlet 31.

[0058] When the upper side portion is referred to as the "upper plate" and the lower side portion is referred to as the "lower plate" based on the gas diffusion space inside the nozzle 30, the internal flow path 33 is formed inside the upper plate.

[0059] The internal flow path 33 is formed in a horizontal state at the same height.

[0060] Moreover, the inner end portion (in the radial direction of the nozzle 30) of the internal flow path 33 opens to the inside of the flow inlet 31. That is, inlet holes 33a of the plurality of internal flow paths 33 are formed on the inner circumferential surface of the flow inlet 31.

[0061] The outer end portion in the radial direction of the internal flow path 33 is blocked.

[0062] The bottom surface of the portion of the internal flow path 33 adjacent to the outer end portion in the radial direction penetrates downward to form an outlet hole 33b.

[0063] The inlet holes 33a and the outlet holes 33b are formed for all the internal flow paths 33. The inlet holes 33a are formed at equal intervals at the same height on the inner circumferential surface of the flow inlet 31, and the outlet holes 33b are formed at equal intervals on the same virtual circle on the bottom surface of the upper plate of the nozzle 30.

[0064] Through the structure of the internal flow path 33 as described above, the reaction gas at the flow inlet 31 can flow into the internal flow path 33 through the inlet holes 33a and then be discharged to the outer end portion in the radial direction of the gas diffusion space through the outlet holes 33b.

[0065] On the other hand, as Figure 6 、 Figure 7 shown, the internal flow path 33 can be implemented in different forms.

[0066] As Figure 6 、 Figure 7 shown, the internal flow path 33 is formed from the flow inlet 31 to the outer side in the radial direction, and a plurality of (2 to 4) are formed at equal intervals along the circumferential direction ( Figure 6An embodiment is shown in which one is formed on each side of the inlet 31, for a total of two.

[0067] And, in the radially outer end adjacent portion of the internal flow path 33, a circular circumferential flow path 34 is formed in the entire circumferential direction of the spray head 30.

[0068] The internal flow path 33 is connected to the circumferential flow path 34, and the lower surface of the circumferential flow path 34 opens downward, that is, into the gas diffusion space, in the entire circumferential direction. Specifically, the circumferential flow path 34 can be regarded as a flow path formed by connecting all the plurality of outlet holes 33b shown Figure 5 in the circumferential direction and expanding its width.

[0069] As described above, when the circumferential flow path 34 is formed, the reaction gas that moves radially outward on the upper plate of the spray head 30 through the internal flow path 33 can move along the entire circumferential direction of the upper plate of the spray head 30 through the circumferential flow path 34 and diffuse downward. Although not shown, a blocker plate with a plurality of through holes is provided below the upper plate of the spray head 30, that is, in the gas diffusion space. Due to the blocker plate, resistance to the downward movement of the reaction gas is generated. Therefore, the reaction gas in the circumferential flow path 34 does not move directly downward, but diffuses along the circumferential flow path 34 to the entire peripheral portion of the spray head 30.

[0070] The flow path assembly 40 is a flow path structure body for connecting a reaction gas source and the inlet 31 formed in the center of the upper surface of the spray head 30. The flow path assembly 40 is connected to the inlet 31 formed in the center of the upper surface of the spray head 30, so that reaction gas can be supplied to the center of the spray head 30.

[0071] The flow path assembly 40 includes: an inflow pipe 41 connected to a reaction gas supply hole (not shown) formed on one side of the upper surface of the lead 20; a connection pipe 42 connected to the inflow pipe 41; and a connection member 43 connecting the connection pipe 42 and the inlet 31 of the spray head 30.

[0072] The inflow pipe 41 is vertically provided on the upper surface of the lead 20 (the portion where the reaction gas supply hole is formed), and the connection pipe 42 horizontally connects the upper end of the inflow pipe 41 and the upper side surface of the connection member 43.

[0073] Among them, the reaction gas supply hole formed on the lead 20 is the outlet side end of the reaction gas supply flow path formed by penetrating the lead 20 or the inside of the main body of the lead 20 and the cavity 10. The reaction gas supply flow path is connected to a reaction gas source separately provided from the deposition equipment, so that the supply of the reaction gas can be received.

[0074] Moreover, a mass flow controller (MFC) is provided on the inlet side of the reaction gas supply flow path. Therefore, the mass flow rate of the reaction gas supplied to the flow path assembly 40 can be measured and the flow rate can be controlled.

[0075] The connecting member 43 is a cylindrical member connected to the upper part of the inlet 31 of the nozzle 30, and is formed with a reaction gas flow path 43a and a cleaning gas flow path 43b.

[0076] The reaction gas flow path 43a is formed in the vertical direction at the center of the connecting member 43. The reaction gas flow path 43a is connected to the connecting pipe 42 at the upper part, is open at the lower part, and is connected to the inlet 31 of the nozzle 30.

[0077] The cleaning gas flow path 43b is formed through the connecting member 43 in the radial direction at approximately the middle height. The inner end of the cleaning gas flow path 43b is connected to the reaction gas flow path 43a, and the outer end of the cleaning gas flow path 43b is open to the outside of the connecting member 43 so as to be able to connect a cleaning gas supply pipe (not shown).

[0078] Therefore, the reaction gas is supplied to the inside of the nozzle 30 through the inlet pipe 41, the connecting pipe 42, the reaction gas flow path 43a, and the inlet 31.

[0079] Moreover, the cleaning gas can be supplied to the inside of the nozzle 30 through the cleaning gas flow path 43b, the reaction gas flow path 43a, and the inlet 31. The cleaning gas has the function of being supplied to the inside of the cavity 10 before and after the deposition process to remove contaminants on the upper surface of the wafer.

[0080] Hereinafter, the functions and effects of the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to an embodiment of the present invention will be described.

[0081] The reaction gas supply device according to an embodiment of the present invention supplies the reaction gas to the inside of the cavity 10 through the flow path assembly 40 and the nozzle 30.

[0082] The reaction gas supplied from the reaction gas source through the connecting pipe to the cavity 10 and the reaction gas supply flow path formed in the lead 20 thus flows to the inflow pipe 41, the connecting pipe 42, the reaction gas flow path 43a of the connecting member 43, and the inlet 31 of the showerhead 30.

[0083] Next, the reaction gas is split into two paths.

[0084] Among the two paths, the first path is a path that discharges directly downward from the inlet 31 to move the gas diffusion space inside the showerhead 30 radially outward, and is discharged into the interior of the cavity 10 through the discharge holes 32 formed in the lower surface (lower plate) of the showerhead 30.

[0085] The other path, that is, the second path, is a path that flows into the internal flow path 33 through the plurality of inlet holes 33a from the inlet 31, moves radially outward along the internal flow path 33, then discharges downward through the outlet holes 33b, and then moves the gas diffusion space inside the showerhead 30 radially inward and is discharged into the interior of the cavity 10 through the discharge holes 32 formed in the lower surface (lower plate) of the showerhead 30.

[0086] As described above, the reaction gas at the inlet 31 is supplied to the inner space of the showerhead 30 through the first path and the second path. Then, the reaction gas supplied through the first path is mainly supplied to the inside of the cavity 10 through the discharge holes 32 in the peripheral portion including the center of the showerhead 30, and the reaction gas supplied through the second path is mainly supplied to the inside of the cavity 10 through the discharge holes 32 in the radially outer portion of the showerhead 30. At this time, the reaction gas supplied through the first path diffuses radially outward, and the reaction gas supplied through the second path diffuses radially inward, so that a uniform amount of reaction gas can be smoothly discharged not only through the central portion and the outer portion of the lower surface (lower plate) of the showerhead 30, but also through the discharge holes 32 between the central portion and the outer portion.

[0087] On the other hand, in the case of the embodiment as shown in Figure 6 , Figure 7 , the reaction gas can also be supplied to the entire outer portion of the gas diffusion space through the internal flow path 33 and the circumferential flow path 34. As in Figure 4 , Figure 5Compared with the embodiments shown, the specific manner of supplying the reaction gas to the outer portion of the gas diffusion space is slightly different, but ultimately the same is that the reaction gas can be smoothly supplied to the outer portion of the gas diffusion space. Therefore, in this case, a uniform amount of reaction gas can be discharged through all the discharge holes 32 on the lower surface (lower plate) of the showerhead 30.

[0088] As described above, the reaction gas can be uniformly discharged through all the discharge holes 32 formed on the lower surface of the showerhead 30, so that the reaction gas can be uniformly supplied to the entire upper surface of the wafer during the process.

[0089] Therefore, the reaction gas supply device according to the embodiment of the present invention solves the problem of supplying a small amount of reaction gas to the outer portion in the radial direction compared to the central portion of the wafer, so that uniform deposition can be achieved over the entire area of the wafer. That is, the deposition uniformity of the wafer is improved.

[0090] And, as described above, since a uniform and sufficient amount of reaction gas can be supplied to the entire upper surface of the wafer, even if various changes occur in the process conditions (such as the internal pressure of the chamber, the plasma concentration, the flow rate of the reaction gas, etc.), it can be deposited on the upper surface of the wafer in a state of good overall uniformity.

[0091] As described above, the reaction gas supply device of the deposition equipment for semiconductor manufacturing according to the present invention can smoothly supply the reaction gas not only to the central portion of the wafer but also to the outer portion in the radial direction, thereby improving the deposition uniformity on the wafer surface.

[0092] As described above, the present invention has been described with reference to the embodiments shown in the drawings, but this is only for illustration, and it should be understood that various modifications and equivalent other embodiments can be made according to the common knowledge in the technical field. Therefore, the true technical protection scope of the present invention should be based on the appended claims and be defined according to the specific content of the above invention.

[0093] Industrial Applicability

[0094] The present invention relates to a reaction gas supply device for deposition equipment for semiconductor manufacturing, and can be used in industrial fields related to deposition equipment for semiconductor manufacturing using a showerhead.

Claims

1. A reaction gas supply device for a deposition device for semiconductor manufacturing, wherein: include: A nozzle is provided through the cavity lead; a flow path assembly connected to an inlet formed at the center of the upper surface of the showerhead to supply a reaction gas to the center of the showerhead; and An internal flow path is formed inside the upper surface of the shower head to supply the reaction gas to the radially outer side of the shower head.

2. The reaction gas supply device for semiconductor manufacturing deposition equipment according to claim 1, characterized in that: The flow path assembly includes: an inflow pipe connected to a reaction gas supply hole formed on the lead wire; a connecting pipe connected to the inflow pipe; and a connecting component for connecting the connecting pipe and the inflow port of the showerhead.

3. The reaction gas supply device for semiconductor manufacturing deposition equipment according to claim 2, characterized in that: A reaction gas flow path for connecting the connecting pipe and the inlet of the nozzle is formed in the central portion of the connecting component along the up-down direction, and a cleaning gas flow path is formed radially through the middle height. The inner end of the cleaning gas flow path is connected to the reaction gas flow path, and the outer end thereof is open to the outside of the connecting component.

4. The reaction gas supply device for semiconductor manufacturing deposition equipment according to claim 2, characterized in that: In the flow path assembly, the inflow pipe is vertically arranged on the upper surface of the lead, and the connecting pipe horizontally connects the upper end of the inflow pipe and the upper side surface of the connecting component.

5. The reaction gas supply device for semiconductor manufacturing deposition equipment according to claim 2, characterized in that: In the flow path assembly, a mass flow controller (MFC) for controlling the flow rate of the reaction gas is provided on the reaction gas supply flow path connected to the flow path assembly.

6. The reaction gas supply device for semiconductor manufacturing deposition equipment according to claim 1, characterized in that: A plurality of the internal flow paths are formed in a radial direction with the inlet of the nozzle as the center.

7. The reaction gas supply device for semiconductor manufacturing deposition equipment according to claim 6, characterized in that: In the internal flow path, an inner end portion opens toward the inlet to form an inlet hole, and a bottom surface of a portion adjacent to the outer end portion penetrates downward to form an outlet hole.

8. The reaction gas supply device for semiconductor manufacturing deposition equipment according to claim 1, characterized in that: In the internal flow path, a plurality of internal flow paths are formed radially outward from the inlet and at equal intervals along the circumferential direction of the nozzle. A circular circumferential flow path is formed in the entire circumferential direction of the nozzle in the adjacent portion of the radially outer end of the internal flow path. The circumferential flow path has a structure that opens downward over the entire circumferential direction.

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