Control method and device, computer equipment and storage medium

Abstract

The invention relates to a control method and device, computer equipment and a storage medium. The method comprises the steps of obtaining a test current of a valve tower test circuit, and determining a modulation wave of each sub-module of a target valve tower in the valve tower test circuit according to the test current and a preset reference current, so as to control each sub-module in the valve tower test circuit according to the modulation wave. By adopting the method, each sub-module in the valve tower test circuit can be controlled in the test process.

Description

Technical Field

[0001] This application relates to the technical field of energy storage, and particularly to a control method, device, computer device, and storage medium. Background Art

[0002] Energy storage systems are of great research significance for a new power system mainly based on new energy. An energy storage system includes multiple sub-modules, and each sub-module includes a power unit and a battery unit.

[0003] Before an energy storage system is put into operation, it is necessary to use the accompanying valve tower in the valve tower test circuit to test each sub-module of the valve tower to be tested in the valve tower test circuit. During the test process, it is necessary to simulate parameters such as current and voltage of the sub-module in the valve tower to be tested under actual operating conditions. Therefore, how to control each sub-module in the valve tower test circuit during the test process is the key research content of those skilled in the art. Summary of the Invention

[0004] Based on this, in view of the above technical problems, it is necessary to provide a control method, device, computer device, and storage medium that can control each sub-module in the valve tower test circuit during the test process.

[0005] In a first aspect, this application provides a control method, including:

[0006] Obtain the test current of the valve tower test circuit;

[0007] Determine the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and a preset reference current;

[0008] Control each sub-module in the valve tower test circuit according to the modulation wave.

[0009] In the above control method, since it is necessary to obtain the test current of the valve tower test circuit and determine the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current, the determined modulation wave of each sub-module can make the test current of the valve tower test circuit gradually approach the preset reference current, improving the accuracy of the test process. Further, after controlling each sub-module in the valve tower test circuit according to the modulation wave, it is possible to control the valve tower test circuit during the test process to verify the reliability of the sub-module.

[0010] In one embodiment, determining the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current includes:

[0011] Determine a first difference between the amplitude of the test current and the amplitude of the preset reference current;

[0012] Determine the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower;

[0013] Determine the modulation wave of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower.

[0014] In the above embodiments, since the first difference between the amplitude of the test current and the amplitude of the preset reference current is determined, and the basic offset of each sub-module in the target valve tower is determined according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower, and then the modulation wave of each sub-module of the target valve tower is determined according to the basic offset of each sub-module in the target valve tower. In this way, the modulation wave of each sub-module can be accurately determined, so that after controlling each sub-module in the valve tower test circuit according to the modulation wave, the test current of the valve tower test circuit gradually approaches the preset reference current.

[0015] In one of the embodiments, determining the modulation wave of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower includes:

[0016] For each sub-module in the target valve tower, determine the offset to be adjusted of the sub-module according to the direction of the test current and the charge state of the sub-module;

[0017] Determine the modulation wave of the sub-module according to the basic offset and the offset to be adjusted of the sub-module.

[0018] In the above embodiments, since for each sub-module in the target valve tower, the offset to be adjusted of the sub-module is determined according to the direction of the test current and the charge state of the sub-module, and then the modulation wave of the sub-module is determined according to the basic offset and the offset to be adjusted of the sub-module, therefore, the modulation wave of each sub-module takes into account the charge state of the sub-module, which is beneficial to the equalization of the SOC between different sub-modules of the same valve tower.

[0019] In one of the embodiments, determining the offset to be adjusted of the sub-module according to the direction of the test current and the charge state of the sub-module includes:

[0020] Determine the average value of the charge states of each sub-module in the target valve tower;

[0021] Determine the second difference between the average value and the charge state of the sub-module;

[0022] Determine the offset to be adjusted of the sub-module according to the second difference and the direction of the test current.

[0023] In the above embodiments, since the average value of the state of charge of each sub-module in the target valve tower is determined, and the second difference between the average value and the state of charge of the sub-module is determined, the offset to be adjusted for the sub-module is determined according to the second difference and the direction of the test current. In this way, the offset to be adjusted for the sub-module can reflect the difference between the SOC of this sub-module and the SOCs of other sub-modules in the same valve tower, which is beneficial to the equalization of the SOCs among different sub-modules in the same valve tower, that is, it is beneficial to the balance of the power among different sub-modules in the same valve tower.

[0024] In one of the embodiments, determining the offset to be adjusted for the sub-module according to the second difference and the direction of the test current includes:

[0025] Processing the second difference to obtain a first result;

[0026] If the direction of the test current is the first direction, taking the negative value of the first result as the offset to be adjusted for the sub-module; the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the test valve tower in the valve tower test circuit;

[0027] If the direction of the test current is the second direction, taking the first result as the offset to be adjusted for the sub-module; the second direction is used to indicate that the test valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

[0028] In the above embodiments, since the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the test valve tower in the valve tower test circuit, and the first direction is used to indicate that the test valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit, therefore, after processing the second difference to obtain the first result, if the direction of the test current is the first direction, taking the negative value of the first result as the offset to be adjusted for the sub-module, and if the direction of the test current is the second direction, taking the first result as the offset to be adjusted for the sub-module. In this way, the offset to be adjusted for the sub-module is determined according to the second difference and the direction of the test current. On the one hand, the determined offset to be adjusted can distinguish the charge and discharge conditions in the valve tower test circuit, and on the other hand, the SOCs of each sub-module in the same valve tower can be considered in the process of determining the offset to be adjusted.

[0029] In one of the embodiments, determining the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty cycle of the target valve tower includes:

[0030] Processing the first difference to obtain a second result;

[0031] If the direction of the test current is the first direction, taking the negative value of the product of the second result and the preset duty cycle as the basic offset;

[0032] If the direction of the test current is the second direction, then the product of the second result and the preset duty ratio is used as the basic offset.

[0033] In the above embodiments, the first difference is processed to obtain the second result. When the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty ratio is used as the basic offset, and when the direction of the test current is the second direction, the product of the second result and the preset duty ratio is used as the basic offset. In this way, not only can the charge and discharge conditions in the valve tower test circuit be distinguished during the determination of the basic offset, but also the basic offset of each sub-module in the target valve tower can be determined according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower.

[0034] In one of the embodiments, determining the modulation wave of each sub-module of the target valve tower according to the basic offset of each sub-module of the target valve tower includes:

[0035] For each sub-module in the target valve tower, if the direction of the test current is the first direction, then the modulation wave of the sub-module is determined according to the difference between the basic offset and the offset to be adjusted of the sub-module;

[0036] If the direction of the test current is the second direction, then the modulation wave of the sub-module is determined according to the sum of the basic offset and the offset to be adjusted.

[0037] In the above embodiments, for each sub-module in the target valve tower, if the direction of the test current is the first direction, then the modulation wave of the sub-module is determined according to the difference between the basic offset and the offset to be adjusted of the sub-module, and if the direction of the test current is the second direction, then the modulation wave of the sub-module is determined according to the sum of the basic offset and the offset to be adjusted. In this way, the electric quantities of the sub-modules of the same valve tower in the valve tower test circuit can be made to converge during operation, so as to improve the stability of the valve tower test circuit.

[0038] In one of the embodiments, controlling each sub-module in the valve tower test circuit according to the modulation wave includes:

[0039] When the target valve tower is the valve tower under test in the valve tower test circuit, each sub-module in the accompanying valve tower in the valve tower test circuit is charged according to the modulation wave of each sub-module in the valve tower under test;

[0040] When the target valve tower is the accompanying valve tower in the valve tower test circuit, each sub-module in the valve tower under test in the valve tower test circuit is charged according to the modulation wave of each sub-module in the accompanying valve tower.

[0041] In the above embodiments, since it is possible to charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the valve tower under test when the target valve tower is the valve tower under test in the valve tower test circuit, and to charge each sub-module in the valve tower under test in the valve tower test circuit according to the modulation wave of each sub-module in the accompanying valve tower when the target valve tower is the accompanying valve tower in the valve tower test circuit, the flexibility of the valve tower test circuit is improved.

[0042] In one embodiment, determining the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current includes:

[0043] Determining the carrier phase shift of each sub-module in the target valve tower according to the number of operating sub-modules and the preset angle in the target valve tower;

[0044] Determining the modulation wave of each sub-module of the target valve tower according to the test current, the preset reference current, and the carrier phase shift of each sub-module in the target valve tower.

[0045] In the above embodiments, since it is possible to determine the carrier phase shift of each sub-module in the target valve tower according to the number of operating sub-modules and the preset angle in the target valve tower, and to determine the modulation wave of each sub-module of the target valve tower according to the test current, the preset reference current, and the carrier phase shift of each sub-module in the target valve tower. Therefore, the modulation wave of the sub-module obtained by using the carrier phase shift has a high bandwidth utilization rate and strong anti-interference ability, and the quality of the modulation wave is improved.

[0046] In a second aspect, the present application also provides a control device, including:

[0047] An acquisition module, configured to acquire the test current of the valve tower test circuit;

[0048] A determination module, configured to determine the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0049] A control module, configured to control each sub-module in the valve tower test circuit according to the modulation wave.

[0050] In a third aspect, the present application also provides a computer device, including a memory and a processor, where the memory stores a computer program, and the processor implements the steps of any of the above methods when executing the computer program.

[0051] In a fourth aspect, the present application also provides a computer-readable storage medium, on which a computer program is stored, and the computer program implements the steps of any of the above methods when being executed by a processor.

[0052] Fifth aspect, the present application also provides a computer program product, including a computer program which, when executed by a processor, implements the steps of any of the above methods.

[0053] The above description is only an overview of the technical solution of the present application. In order to be able to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the present application more obvious and understandable, the following specifically illustrates the specific embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present application. And in all the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0055] Figure 1 is a system architecture diagram of an energy storage system in an embodiment of the present application;

[0056] Figure 2 is a schematic structural diagram of a sub-module in an embodiment of the present application;

[0057] Figure 3 is a schematic structural diagram of another sub-module in an embodiment of the present application;

[0058] Figure 4 is an application environment diagram of the control method in an embodiment of the present application;

[0059] Figure 5 is a schematic flowchart of the control method in an embodiment of the present application;

[0060] Figure 6 is a schematic flowchart of a process for determining a modulation wave in an embodiment of the present application;

[0061] Figure 7 is a schematic flowchart of another process for determining a modulation wave in an embodiment of the present application;

[0062] Figure 8 is a schematic flowchart of a process for determining a to-be-adjusted offset in an embodiment of the present application;

[0063] Figure 9 is a schematic flowchart of another process for determining a to-be-adjusted offset in an embodiment of the present application;

[0064] Figure 10 is a schematic diagram of the principle for determining a first result in an embodiment of the present application;

[0065] Figure 11 is a schematic flowchart of a process for determining a basic offset in an embodiment of the present application;

[0066] Figure 12 It is a schematic flow chart of another method for determining a modulation wave in an embodiment of the present application;

[0067] Figure 13 It is a schematic flow chart of another method for determining a modulation wave in an embodiment of the present application;

[0068] Figure 14 It is a schematic diagram of the principle of the control method in an embodiment of the present application;

[0069] Figure 15 It is a schematic process diagram of a control method in an embodiment of the present application;

[0070] Figure 16 It is a schematic diagram of the result of a valve tower test circuit in an embodiment of the present application;

[0071] Figure 17 It is a schematic diagram of an effect in an embodiment of the present application;

[0072] Figure 18 It is a schematic diagram of another effect in an embodiment of the present application;

[0073] Figure 19 It is a schematic diagram of the effect of the test current in an embodiment of the present application;

[0074] Figure 20 It is a structural block diagram of a control adjustment device in an embodiment of the present application;

[0075] Figure 21 It is a structural block diagram of a determination module in an embodiment of the present application;

[0076] Figure 22 It is a structural block diagram of a third determination unit in an embodiment of the present application;

[0077] Figure 23 It is a structural block diagram of a second determination unit in an embodiment of the present application;

[0078] Figure 24 It is an internal structure diagram of a computer device in an embodiment of the present application. Detailed implementation manners

[0079] Hereinafter, embodiments of the technical solutions of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and thus are only examples and should not be used to limit the protection scope of the present application.

[0080] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs; the terms used herein are for the purpose of describing specific embodiments only and are not intended to limit this application; the terms "comprising" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion.

[0081] In the description of the embodiments of this application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity, specific order or primary-secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "a plurality" is more than two, unless otherwise specifically defined.

[0082] Reference to "an embodiment" herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of this application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0083] In the description of the embodiments of this application, the term "a plurality" means more than two (including two). Similarly, "a plurality of groups" means more than two groups (including two groups), and "a plurality of pieces" means more than two pieces (including two pieces).

[0084] Figure 1 is a system architecture diagram of an energy storage system in an embodiment of this application, as Figure 1 shown, Figure 1 shows a high-voltage direct-connected energy storage system, which is configured between the positive and negative DC outputs of a DC transmission line. The high-voltage direct-connected energy storage system includes a reactor and N sub-modules. N is an integer greater than or equal to 1. SM 1 represents the first sub-module, SM 2 represents the first sub-module,..., SM N represents the Nth sub-module, and so on.

[0085] For a clearer explanation of the high-voltage direct-connected energy storage system in this application, reference is hereby made to Figure 2 and Figure 3 for illustration. Figure 2 and Figure 3 are respectively schematic structural diagrams of the sub-modules in the embodiments of this application.

[0086] Figure 2 shows a half-bridge sub-module. As Figure 2As shown Figure 1 The sub-module in Figure 1 may include a power unit 201 and a battery unit 202. The power unit 201 includes a switch 203, a transistor 204, a transistor 205, a capacitor 206, and a resistor 207. The battery unit 202 includes a battery pack 208.

[0087] Among them, the switch 203 is used to control whether the power unit 201 accesses or exits from the energy storage system. The transistors 204 and 205 are used to control the charge and discharge of the corresponding sub-module. For example, when the transistor 204 is turned on and the transistor 205 is turned off, the battery unit 202 charges; when the transistor 204 is turned on and the transistor 205 is turned off, the battery unit 202 discharges. The capacitor 206 can support and stabilize the voltage of the power unit 201. The resistor 207 can balance the voltage of the capacitor 206 in the power unit 201. The battery pack 215 is used to provide energy support for the energy storage system.

[0088] Figure 3 A full-bridge sub-module is shown. As Figure 3 shown Figure 1 The sub-module in Figure 1 may also include a power unit 301 and a battery unit 302. The power unit 301 includes a switch 303, transistors 304, 305, 306, 307, a capacitor 308, and a resistor 309. The battery unit 302 includes a battery pack 310. When the transistors 304 and 305 are turned on and the transistors 306 and 307 are turned off, the battery unit 202 charges; when the transistors 304 and 305 are turned off and the transistors 306 and 307 are turned on, the battery unit 202 discharges. Figure 3 The principle of the sub-module in Figure 3 is similar to that in Figure 2 Figure 2 , and will not be elaborated here.

[0089] Compared with the traditional energy storage system, the high-voltage large-capacity energy storage system taking Figure 1 as an example mainly has the following three advantages. First, it can enhance the grid regulation ability of the flexible DC transmission system, thus playing a positive role in grid support. Second, it is suitable for the application scenario of offshore wind power transmitted through flexible DC, and has a broader application prospect. Third, adopting an integrated modular design, the system has lower network losses, better economic benefits, and higher operation reliability. Therefore, the high-voltage large-capacity energy storage system has important research significance for the new power system with new energy as the main body.

[0090] Before a high-voltage large-capacity energy storage system is put into operation, it is necessary to use the accompanying valve tower in the valve tower test circuit to test each sub-module in the valve tower to be tested in the valve tower test circuit. During the test process, it is necessary to simulate parameters such as current and voltage of the sub-module in the valve tower to be tested under actual operating conditions. However, due to factors such as the traditional energy storage system not including battery units, how to control each sub-module in the valve tower test circuit during the test process is the key research content of those skilled in the art. Based on this, it is necessary to provide a control method capable of controlling each sub-module in the valve tower test circuit for the above technical problems. The following will introduce this control method.

[0091] Figure 4 It is an application environment diagram of the control method in an embodiment of the present application. Among them, the computer device 401 can communicate with the valve tower test circuit 402. The valve tower test circuit 402 includes a reactor 403, a valve tower to be tested 404, and an accompanying valve tower 405. Among them, the valve tower to be tested can also be called a test sample valve tower, and the valve tower can also be called a valve section.

[0092] Please continue to refer to Figure 4 , the valve tower to be tested 404 and the accompanying valve tower 405 can be respectively obtained by connecting at least one sub-module in series. Exemplarily, the valve tower to be tested 404 includes sub-module 404a, sub-module 404b, and sub-module 404c, and the accompanying valve tower 405 includes sub-module 405a, sub-module 405b, and sub-module 405c.

[0093] Furthermore, the high-voltage output ends of the valve tower to be tested 404 and the accompanying valve tower 405 are connected through the reactor 403, and the low-voltage output ends of the valve tower to be tested 404 and the accompanying valve tower 405 are directly connected. Each sub-module includes a power unit and a battery unit. The power unit can be either Figure 2 the half-bridge topology shown, or Figure 3 the full-bridge topology shown. In this way, the valve tower test circuit 402 can simulate the current and voltage of the valve tower to be tested 404 or the accompanying valve tower 405 under real working conditions, so as to verify the reliability of the corresponding power unit and battery unit.

[0094] It should be noted that Figure 4 is only an example of a valve tower test circuit. In some embodiments, the accompanying valve tower 405 may also include other devices capable of charging and discharging.

[0095] Furthermore, the computer device 401 can be, but is not limited to, various personal computers, laptop computers, smart phones, tablet computers, and portable wearable devices. The portable wearable device can be a smart watch, a smart bracelet, a head-mounted device, etc. Of course, the computer device 401 can also be implemented by an independent server or a server cluster composed of multiple servers.

[0096] In some embodiments, the computer device 401 also includes, but is not limited to, a Central Processing Unit (CPU), and may also include at least one of a Digital Signal Processing (DSP), a Field-Programmable Gate Array (FPGA), or other programmable logic devices.

[0097] Figure 5 FIG. is a schematic flowchart of the control method in the embodiments of the present application. In an exemplary embodiment, as Figure 5 shown, a control method is provided. Taking the computer device in Figure 1 as an example, the following S501 to S505 are included.

[0098] S501, obtain the test current of the valve tower test circuit.

[0099] In this embodiment, the valve tower test circuit at least includes a valve tower under test and a companion valve tower. In some embodiments, the valve tower test circuit may also include a reactor.

[0100] The valve tower under test includes at least one sub-module. The companion valve tower may include at least one sub-module or other devices capable of charging and discharging. It should be noted that the sub-modules in the valve tower under test or the companion valve tower are connected in series.

[0101] Among them, the sub-module may be a sub-module in a high-voltage direct-connected energy storage system. The sub-module includes a power unit and a battery unit, and the power unit is connected in parallel with the battery unit. The power unit includes switches, transistors, capacitors, and resistors, and the power unit may be a half-bridge topology or a full-bridge topology. The battery unit includes a battery pack.

[0102] Please continue to refer to Figure 4 , when the valve tower under test 404 and the companion valve tower 405 are operating, one of the valve towers is in a charging state and the other valve tower is in a discharging state. For example, if the valve tower under test 404 is in a discharging state, the companion valve tower 405 is in a charging state; if the valve tower under test 404 is in a charging state, the companion valve tower 405 is in a discharging state.

[0103] The test current is also the charging and discharging current i between the valve tower under test 404 and the companion valve tower 405 L . As Figure 4 shown, when the direction of the charging and discharging current i L points from the companion valve tower 405 to the valve tower under test 404, it means that the companion valve tower 405 charges the valve tower under test 404. That is, the companion valve tower 405 is in a discharging state and the valve tower under test 404 is in a charging state. When the charging and discharging current iL If the direction of L points from the tested valve tower 404 to the companion - tested valve tower 405, it means that the tested valve tower 404 charges the companion - tested valve tower 405. That is, the tested valve tower 404 is in a discharging state and the companion - tested valve tower 405 is in a charging state.

[0104] Optionally, the computer device can obtain the test current of the valve tower test circuit 402 through a sensor. Among them, the sensor can obtain the test current i in the valve tower test circuit 402 L such as the amplitude, direction, etc. Exemplarily, the sensor can include but is not limited to an oscilloscope.

[0105] S502, determine the modulation waves of each sub - module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current.

[0106] The preset reference current is used to indicate the target value of the charge - discharge current between the tested valve tower 404 and the companion - tested valve tower 405. The computer device can obtain the preset reference current sent by other devices, or can also respond to the user's input operation to determine the preset reference current input by the user.

[0107] Denote the preset reference current as i ref , further, the computer device can then determine the modulation waves of each sub - module of the target valve tower in the valve tower test circuit according to the test current i L and the preset reference current i ref .

[0108] Among them, the target valve tower is the valve tower to be controlled, referring to any one of the valve towers in the valve tower test circuit. That is to say, the target valve tower can be the tested valve tower 404 or the companion - tested valve tower 405. Taking Figure 4 as an example, if the target valve tower is the tested valve tower 404, the computer device will determine the modulation wave of sub - module 404a, the modulation wave of sub - module 404b, and the modulation wave of sub - module 404c. If the target valve tower is the companion - tested valve tower 405, the computer device will determine the modulation wave of sub - module 405a, the modulation wave of sub - module 405b, and the modulation wave of sub - module 405c.

[0109] Optionally, the computer device can perform PID (Proportional - Integral - Derivative) adjustment on the absolute value of the difference between the test current i L and the preset reference current i ref to obtain an adjustment result, and determine the modulation waves of each sub - module of the target valve tower according to the adjustment result and the preset modulation wave.

[0110] Optionally, the computer device can also determine according to the test current i L , the preset reference current i refAnd the state of charge of each sub-module in the target valve tower, determine the modulation wave of each sub-module of the target valve tower, so as to consider the power situation of each sub-module in the process of determining the modulation wave of each sub-module. For example, the computer device can be based on the test current i L and the preset reference current i ref to determine the basic offset, and determine the offset to be adjusted according to the state of charge of each sub-module in the target valve tower, and then use the offset to be adjusted to correct the basic offset to determine the modulation wave of each sub-module.

[0111] S503, control each sub-module in the valve tower test circuit according to the modulation wave.

[0112] Furthermore, after the computer device determines the modulation wave of each sub-module of the target valve tower, it can control each sub-module in the valve tower test circuit according to the modulation wave.

[0113] Among them, the duty cycle of the modulation wave can be determined through the modulation wave of the sub-module, and then the on or off duration of the transistor in the sub-module can be controlled by using the duty cycle of the modulation wave.

[0114] Taking the sub-module 404a of the half-bridge as an example, in the case where it is necessary to control the test valve tower 404 to be in the charging state, the computer device can determine the on duration of the transistor 204 and the off duration of the transistor 205 according to the duty cycle of the modulation wave of the sub-module 404a, and then control the transistor 204 to conduct according to the on duration, and control the transistor 205 to turn off according to the off duration. In this way, the sub-module 404a can be controlled to be in the charging state. The same applies to other modules and will not be elaborated here.

[0115] In the above control method, since it is necessary to obtain the test current of the valve tower test circuit and determine the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current, the modulation wave of each sub-module determined can make the test current of the valve tower test circuit gradually approach the preset reference current, improving the accuracy of the test process. Further, after controlling each sub-module in the valve tower test circuit according to the modulation wave, it is possible to control the valve tower test circuit during the test to verify the reliability of the sub-module.

[0116] Figure 6 This is a schematic flow chart of determining a modulation wave in an embodiment of the present application. In an exemplary embodiment, as Figure 6 shown, S502 includes S601 to S603.

[0117] S601, determine the first difference between the amplitude of the test current and the amplitude of the preset reference current.

[0118] In this embodiment, the computer device determines the test current i LThe first difference between the amplitude value and the preset reference current i ref Among them, the computer device can determine i L -i ref and can also determine i ref -i L .

[0119] S602. Determine the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower.

[0120] Among them, the direction of the test current is also the Figure 4 charging and discharging current i L in the direction of, which can be determined by sensor measurement. The direction of the test current can be from the accompanying test valve tower 405 to the test valve tower 404, or from the test valve tower 404 to the accompanying test valve tower 405. Hereinafter, the direction from the accompanying test valve tower 405 to the test valve tower 404 is recorded as the first direction, and the direction from the test valve tower 404 to the accompanying test valve tower 405 is recorded as the second direction.

[0121] The preset duty ratio C of the target valve tower represents the preset value of the duty ratio of the modulation wave of each sub-module, which can be the average value or weighted average value of the duty ratios of each sub-module, etc. Among them, since the value range of the duty ratio is [0, 1], C ∈ [0, 1]. Similarly, the computer device can obtain the preset duty ratio C sent by other devices, or can respond to the user's input operation to determine the preset duty ratio C input by the user.

[0122] Furthermore, the computer device can determine the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower. For example, when the direction of the test current is the first direction, the computer device can determine the basic offset according to the negative value of the product of the absolute value of the first difference and the preset duty ratio; when the direction of the test current is the second direction, the computer device can determine the basic offset according to the product of the absolute value of the first difference and the preset duty ratio.

[0123] It should be noted that the basic offsets of each sub-module in the target valve tower are the same.

[0124] S603. Determine the modulation wave of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower.

[0125] Further, the computer device determines the modulation waves of the sub-modules of the target valve tower according to the basic offsets of the sub-modules in the target valve tower. Exemplarily, the computer device may use the basic offsets of the sub-modules in the target valve tower as the duty cycles of the modulation waves of the sub-modules to determine the modulation waves of the sub-modules. The computer device may also obtain the modulation waves of the sub-modules after performing a clipping process on the basic offsets of the sub-modules in the target valve tower.

[0126] In the above embodiments, since the first difference between the amplitude of the test current and the amplitude of the preset reference current is determined, and the basic offsets of the sub-modules in the target valve tower are determined according to the first difference, the direction of the test current, and the preset duty cycle of the target valve tower, and then the modulation waves of the sub-modules of the target valve tower are determined according to the basic offsets of the sub-modules in the target valve tower. In this way, the modulation waves of the sub-modules can be determined more accurately, so that after controlling the sub-modules in the valve tower test circuit according to the modulation waves, the test current of the valve tower test circuit gradually approaches the preset reference current.

[0127] Figure 7 This is a schematic flowchart of another process for determining the modulation wave in the embodiments of the present application. In an exemplary embodiment, as Figure 7 shown, S603 includes S701 to S702.

[0128] S701, for each sub-module in the target valve tower, determine the offset to be adjusted of the sub-module according to the direction of the test current and the charge state of the sub-module.

[0129] Before the valve tower test circuit performs an operation test, due to battery self-discharge or other factors, the battery packs of the battery units of the sub-modules before commissioning may have insufficient power, resulting in a large difference in the state of charge (SOC) values between the sub-modules. At the same time, during the operation of the valve tower test circuit, the SOC between the sub-modules may also be discretized.

[0130] Therefore, in order to improve the power equalization of the sub-modules during the operation of the valve tower test circuit, this embodiment also determines the offset to be adjusted of each sub-module in the target valve tower according to the direction of the test current and the charge state of the sub-module. In other words, the offsets to be adjusted of different sub-modules are different.

[0131] Among them, the computer device can obtain the charge state of each sub-module in the target valve tower through sensors or other means, that is, obtain the SOC of the battery pack of the battery unit in each sub-module.

[0132] Exemplarily, the computer device may set a reference SOC, and for each sub-module in the target valve tower, calculate the target difference between the SOC of each sub-module and the reference SOC. Further, when the direction of the test current is the first direction, the offset to be adjusted is determined according to the negative value of the target difference; when the direction of the test current is the second direction, the basic offset is determined according to the target difference.

[0133] S702. Determine the modulation wave of the sub-module according to the basic offset and the offset to be adjusted of the sub-module.

[0134] Furthermore, the computer device can determine the modulation wave of the sub-module according to the basic offset and the offset to be adjusted of the sub-module. It can be understood that since the offsets to be adjusted of different sub-modules are different, the modulation waves of different sub-modules are also different.

[0135] Exemplarily, the computer device may sum or subtract the basic offset and the offset to be adjusted of the sub-module to determine the duty cycle of the modulation wave of the sub-module, and further determine the modulation wave of the sub-module.

[0136] In the above embodiments, for each sub-module in the target valve tower, the offset to be adjusted of the sub-module is determined according to the direction of the test current and the state of charge of the sub-module, and then the modulation wave of the sub-module is determined according to the basic offset and the offset to be adjusted of the sub-module. Therefore, the modulation wave of each sub-module takes into account the state of charge of the sub-module, which is beneficial to the equalization of the SOC among different sub-modules of the same valve tower.

[0137] Figure 8 FIG. is a schematic flowchart of a process for determining the offset to be adjusted in an embodiment of the present application. In an exemplary embodiment, as Figure 8 shown, S701 includes S801 to S803.

[0138] S801. Determine the average value of the state of charge of each sub-module in the target valve tower.

[0139] In this embodiment, the computer device first determines the average value of the state of charge of each sub-module in the target valve tower. Taking the target valve tower as the test valve tower 404 as an example, the computer device will determine the average value among the SOC of the sub-module 404a, the SOC of the sub-module 404b, and the SOC of the sub-module 404c.

[0140] S802. Determine the second difference between the average value and the state of charge of the sub-module.

[0141] Furthermore, when it is necessary to determine the offset to be adjusted of the sub-module 404a, the computer device determines the second difference between the SOC of the sub-module 404a and the average value determined in S801.

[0142] S803. Determine the offset to be adjusted for the sub-module according to the second difference and the direction of the test current.

[0143] After that, the computer device can determine the offset to be adjusted for the sub-module 404a according to the second difference in S802 and the direction of the test current. For example, when the direction of the test current is the first direction, the computer device determines the offset to be adjusted according to the negative value of the second difference; when the direction of the test current is the second direction, the computer device determines the basic offset according to the second difference. The same applies to other sub-modules and will not be elaborated here.

[0144] In the above embodiment, since the average value of the charged states of the sub-modules in the target valve tower is determined, and the second difference between the average value and the charged state of the sub-module is determined, so as to determine the offset to be adjusted for the sub-module according to the second difference and the direction of the test current. In this way, the offset to be adjusted for the sub-module can reflect the difference between the SOC of this sub-module and the SOC of other sub-modules in the same valve tower, which is beneficial to the equalization of the SOC between different sub-modules in the same valve tower, that is, it is beneficial to the balance of the power between different sub-modules in the same valve tower.

[0145] Figure 9 This is another schematic flow chart for determining the offset to be adjusted in the embodiments of the present application. In an exemplary embodiment, as Figure 9 shown, S803 includes S901 to S903.

[0146] S901. Process the second difference to obtain a first result.

[0147] In this embodiment, processing the second difference may include but is not limited to at least one of proportional regulation, proportional integral (PI) regulation, and PID (proportional integral derivative) regulation. Further optionally, processing the second difference may also include amplitude limiting processing.

[0148] Exemplarily, the computer device may only perform PI regulation on the second difference to obtain a first result. The computer device may also perform PI regulation on the second difference and perform amplitude limiting processing on the result after performing PI regulation on the second difference to obtain a first result.

[0149] Figure 10 This is a schematic diagram of the principle for determining a first result in the embodiments of the present application. As Figure 10 shown, m represents the target valve tower in the valve tower test circuit. When m = 1, the target valve tower is the test valve tower 404. When m = 2, the target valve tower is the accompanying test valve tower 405. n represents the sub-module serial number. When m = 1, n = 1 represents the sub-module 404a. When m = 1, n = 2 represents the sub-module 404b, and so on.

[0150] Further, SOCm_average represents the average value of the SOCs of the sub-modules in the target valve tower, SOCm_n represents the SOC of the nth sub-module in the target valve tower, and Sm_n represents the first result of the nth sub-module in the target valve tower. Since the value range of the duty cycle is [0, 1], the value range of Sm_n should be between [C, 1 - C] or [1 - C, C].

[0151] In some embodiments, Sm_n affects the equalization rate of the initial charge. If the deviation of the initial charge values between sub-modules is too large, Sm_n can be limited to output 0.2 or -0.2. It can be understood that the initial charge values between sub-modules are also the initial values of the SOCs of the battery packs in the battery cells of the sub-modules.

[0152] Combined with Figure 10 , taking m = 1 and n = 1 as an example, the computer device determines the average value among the SOC of sub-module 404a, the SOC of sub-module 404b, and the SOC of sub-module 404c as SOC1_average, and determines the SOC of sub-module 404a as SOC1_1. Further, the computer device determines the second difference between SOC1_1 and SOC1_average, and after performing PI regulation and limiting processing on this second difference, obtains the first result S1_1 of sub-module 404a.

[0153] S902, if the direction of the test current is the first direction, then take the negative value of the first result as the adjustment offset of the sub-module; the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the tested valve tower in the valve tower test circuit.

[0154] Further, please continue to refer to Figure 4 , when the direction of the test current is the first direction, that is, when the accompanying valve tower 405 charges the tested valve tower 404, the computer device takes the negative value of the first result as the adjustment offset of the sub-module. Exemplarily, assuming that the direction of the test current is the first direction, the computer device takes -S1_1 as the adjustment offset of sub-module 404a.

[0155] S903, if the direction of the test current is the second direction, then take the first result as the adjustment offset of the sub-module; the second direction is used to indicate that the tested valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

[0156] Please continue to refer to Figure 4 , when the direction of the test current is the second direction, that is, when the tested valve tower 404 charges the accompanying valve tower 405, the computer device directly takes the first result as the adjustment offset of the sub-module. Exemplarily, assuming that the direction of the test current is the second direction, the computer device takes S1_1 as the adjustment offset of sub-module 404a.

[0157] In the above embodiments, since the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the tested valve tower in the valve tower test circuit, and the first direction is used to indicate that the tested valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit. Therefore, after processing the second difference to obtain the first result, if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted for the sub-module. If the direction of the test current is the second direction, the first result is used as the offset to be adjusted for the sub-module. In this way, the offset to be adjusted for the sub-module is determined according to the second difference and the direction of the test current. On the one hand, the determined offset to be adjusted can distinguish the charge and discharge conditions in the valve tower test circuit. On the other hand, the SOC of each sub-module in the same valve tower can be considered in the process of determining the offset to be adjusted.

[0158] Figure 11 FIG. is a schematic flow chart of determining a basic offset in an embodiment of the present application. In an exemplary embodiment, as Figure 11 shown, S602 includes S1101 to S1103.

[0159] S1101, process the first difference to obtain a second result.

[0160] In this embodiment, similarly, processing the first difference may include, but is not limited to, at least one of proportional adjustment, proportional-integral (PI) adjustment, and PID (proportional-integral-derivative) adjustment. Further optionally, processing the first difference may further include limiting processing.

[0161] Exemplarily, the computer device may only perform PI adjustment on the first difference to obtain a second result. The computer device may also perform PI adjustment on the first difference and perform limiting processing on the result after performing PI adjustment on the first difference to obtain a second result. It should be noted that the second result is always positive.

[0162] S1102, if the direction of the test current is the first direction, use the negative value of the product of the second result and the preset duty ratio as the basic offset.

[0163] In this embodiment, continuing the above example, when the direction of the test current is the first direction, that is, when the accompanying valve tower 405 charges the tested valve tower 404, the computer device uses the negative value of the product of the second result and the preset duty ratio C as the basic offset. Exemplarily, assuming that the direction of the test current is the first direction, and the second difference is K after PI adjustment and limiting processing, the computer device uses -K*C as the basic offset.

[0164] S1103, if the direction of the test current is the second direction, use the product of the second result and the preset duty ratio as the basic offset.

[0165] When the direction of the test current is the second direction, that is, when the test valve tower 404 charges the companion test valve tower 405, the computer device uses the product of the second result and the preset duty cycle C as the basic offset. Exemplarily, assume that the direction of the test current is the second direction, and K is obtained after the second difference is subjected to PI regulation and clipping processing. Then the computer device uses K*C as the basic offset.

[0166] In the above embodiments, the first difference is processed to obtain the second result. When the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle is used as the basic offset, and when the direction of the test current is the second direction, the product of the second result and the preset duty cycle is used as the basic offset. In this way, not only can the charge and discharge conditions in the valve tower test circuit be distinguished during the determination of the basic offset, but also the basic offset of each sub-module in the target valve tower is determined according to the first difference, the direction of the test current, and the preset duty cycle of the target valve tower.

[0167] Figure 12 This is another flowchart for determining the modulation wave in the embodiments of the present application. In an exemplary embodiment, as Figure 12 shown, S702 includes S1201 to S1203.

[0168] S1201, for each sub-module in the target valve tower, if the direction of the test current is the first direction, determine the modulation wave of the sub-module according to the difference between the basic offset and the offset to be adjusted of the sub-module.

[0169] In this embodiment, continuing to take the sub-module 404a as an example, if the direction of the test current is the first direction, the computer device may use the difference between the basic offset and the offset to be adjusted of the sub-module 404a as the modulation wave of the sub-module 404a.

[0170] In this way, when the SOC of the sub-module 404a is higher than the average value of the SOCs of each sub-module in the test valve tower 404, the second difference is positive, the offset to be adjusted is negative, and the basic offset is negative. Then the modulation wave of the sub-module 404a is a negative value with a smaller absolute value, which is equivalent to reducing the duty cycle of the modulation wave of the sub-module 404a, thereby reducing the charging duration of the battery unit in the sub-module 404a to suppress the increase of the SOC of the sub-module 404a.

[0171] When the SOC of sub-module 404a is lower than the average value of the SOCs of all sub-modules in the test valve tower 404, the second difference is negative, the offset to be adjusted is positive, and the basic offset is negative. Then, the modulation wave of sub-module 404a is a negative value with a relatively large absolute value, which is equivalent to increasing the duty cycle of the modulation wave of sub-module 404a, thereby increasing the charging duration of the battery cells in sub-module 404a to promote the increase of the SOC of sub-module 404a.

[0172] S1202, if the direction of the test current is the second direction, then determine the modulation wave of the sub-module according to the sum of the basic offset and the offset to be adjusted.

[0173] If the direction of the test current is the second direction, the computer device can use the sum between the basic offset and the offset to be adjusted of sub-module 404a as the modulation wave of sub-module 404a. In this way, when the SOC of sub-module 404a is higher than the average value of the SOCs of all sub-modules in the test valve tower 404, the second difference is positive, the offset to be adjusted is positive, and the basic offset is positive. Then, the modulation wave of sub-module 404a is a positive value with a relatively large absolute value, which is equivalent to increasing the duty cycle of the modulation wave of sub-module 404a, thereby increasing the discharging duration of the battery cells in sub-module 404a to promote the decrease of the SOC of sub-module 404a.

[0174] When the SOC of sub-module 404a is lower than the average value of the SOCs of all sub-modules in the test valve tower 404, the second difference is negative, the offset to be adjusted is positive, and the basic offset is positive. Then, the modulation wave of sub-module 404a is an amplitude with a relatively small absolute value, which is equivalent to decreasing the duty cycle of the modulation wave of sub-module 404a, thereby decreasing the discharging duration of the battery cells in sub-module 404a to inhibit the decrease of the SOC of sub-module 404a.

[0175] It can be understood that since the modulation wave of each sub-module is determined according to its own SOC situation, in this way, by controlling the corresponding sub-module according to the modulation wave of each sub-module, the sub-module with a higher SOC will decrease the charging duration or increase the discharging duration, and the sub-module with a lower SOC will increase the charging duration or decrease the discharging duration. In this way, the SOCs of all sub-modules in the same valve tower will tend to be the same, thereby equalizing the power of the battery packs in all sub-modules of the same valve tower.

[0176] In the above embodiments, for each sub-module in the target valve tower, if the direction of the test current is the first direction, the modulation wave of the sub-module is determined according to the difference between the basic offset and the offset to be adjusted of the sub-module; if the direction of the test current is the second direction, the modulation wave of the sub-module is determined according to the sum of the basic offset and the offset to be adjusted. In this way, the electric quantities of the sub-modules of the same valve tower in the valve tower test circuit can be made to converge during operation, so as to improve the stability of the valve tower test circuit.

[0177] In an exemplary embodiment, optionally, S503 can be implemented by one of the following:

[0178] First, when the target valve tower is the valve tower under test in the valve tower test circuit, the sub-modules in the accompanying valve tower in the valve tower test circuit are charged according to the modulation waves of the sub-modules in the valve tower under test. That is, when the target valve tower is the valve tower under test 404, the computer device can generate the modulation waves of the sub-modules in the valve tower under test 404 to control the valve tower under test 404 to charge the sub-modules in the accompanying valve tower 405.

[0179] Second, when the target valve tower is the accompanying valve tower in the valve tower test circuit, the sub-modules in the valve tower under test in the valve tower test circuit are charged according to the modulation waves of the sub-modules in the accompanying valve tower. That is, when the target valve tower is the accompanying valve tower 405, the computer device can also generate the modulation waves of the sub-modules in the accompanying valve tower 405 to control the accompanying valve tower 405 to charge the sub-modules in the valve tower under test 404.

[0180] In the above embodiments, since the sub-modules in the accompanying valve tower in the valve tower test circuit can be charged according to the modulation waves of the sub-modules in the valve tower under test when the target valve tower is the valve tower under test in the valve tower test circuit, and the sub-modules in the valve tower under test in the valve tower test circuit can be charged according to the modulation waves of the sub-modules in the accompanying valve tower when the target valve tower is the accompanying valve tower in the valve tower test circuit, the flexibility of the valve tower test circuit is improved.

[0181] Figure 13 This is another schematic flow chart for determining the modulation wave in the embodiments of the present application. In an exemplary embodiment, as Figure 13 shown, S502 includes S1301 to S1302.

[0182] S1301, determine the carrier phase shift of each sub-module in the target valve tower according to the number of operating sub-modules in the target valve tower and the preset angle.

[0183] Among them, the number of operating sub-modules is used to represent the number of sub-modules operating normally in the target valve tower. Taking the target valve tower as the test valve tower as an example, under normal operating conditions, the number of operating sub-modules is N. If one of the sub-modules is bypassed, the computer device determines that the number of operating sub-modules is N - 1.

[0184] Optionally, the computer device can periodically obtain the number of operating sub-modules in the target valve tower sent by other devices, or can periodically receive the operating status of each sub-module sent by other devices, and determine the number of operating sub-modules in the target valve tower according to the operating status of each sub-module.

[0185] The preset angle refers to the variable range of the phase of the modulation wave, which is a value greater than 0° (degree). Exemplarily, the preset angle can be 360°.

[0186] Furthermore, the computer device can determine the carrier phase shift of each sub-module in the target valve tower according to the quotient between the preset angle and the number of operating sub-modules in the target valve tower. Exemplarily, if the number of operating sub-modules is N, the computer device takes 360° / N as the carrier phase shift of each sub-module in the target valve tower. That is, the phase difference between the modulation waves of every two adjacent sub-modules in the target valve tower is 360° / N. It can be understood that if the number of operating sub-modules is N - 1, the computer device takes 360° / (N - 1) as the carrier phase shift of each sub-module in the target valve tower. That is, the phase difference between the modulation waves of every two adjacent sub-modules in the target valve tower is 360° / (N - 1).

[0187] S1302. Determine the modulation waves of each sub-module of the target valve tower according to the test current, the preset reference current, and the carrier phase shift of each sub-module in the target valve tower.

[0188] Even further, the computer device can determine the modulation waves of each sub-module of the target valve tower according to the test current, the preset reference current, and the carrier phase shift of each sub-module in the target valve tower. Exemplarily, the computer device can determine the initial modulation wave of the sub-module according to the basic offset and the offset to be adjusted of the sub-module, and after performing carrier phase shift on the initial modulation wave of the sub-module according to 360° / N, determine the modulation waves of each sub-module of the target valve tower.

[0189] In the above embodiments, since the carrier phase shift of each sub-module in the target valve tower can be determined according to the number of operating sub-modules in the target valve tower and the preset angle, and the modulation waves of each sub-module of the target valve tower can be determined according to the test current, the preset reference current, and the carrier phase shift of each sub-module in the target valve tower. Therefore, the modulation waves of the sub-modules obtained by using carrier phase shift have high bandwidth utilization rate and strong anti-interference ability, and improve the quality of the modulation waves.

[0190] To more clearly introduce the control method in the embodiments of the present application, the following is described in conjunction with Figure 14 and Figure 15 . Figure 14 is a schematic diagram of the principle of the control method in the embodiments of the present application. Figure 14 In the example, the test valve tower 404 and the accompanying test valve tower 405 each include 3 sub-modules.

[0191] Figure 14 In, s(i L ) is a sign function, which is determined by the direction of the test current i L . When the accompanying test valve tower 405 charges the test valve tower 404, that is, when the test current i L points from the accompanying test valve tower 405 to the test valve tower 404, i L is greater than 0, s(i L ) takes -1, and the output value is opposite to the input value; when the test valve tower 404 charges the accompanying test valve tower 405, that is, when the test current i L points from the test valve tower 404 to the accompanying test valve tower 405, i L is less than 0, s(i L ) takes 1, and the output value is the same as the input value.

[0192] Combined with Figure 4 , PWM1_1 represents the modulation wave of the sub-module 404a in the test valve tower 404, and is used to drive the transistor IGBT1_1 of the sub-module 404a in the test valve tower 404; PWM1_2 represents the modulation wave of the sub-module 404b in the test valve tower 404, and is used to drive the transistor IGBT1_2 of the sub-module 404b in the test valve tower 404; PWM1_3 represents the modulation wave of the sub-module 404c in the test valve tower 404, and is used to drive the transistor IGBT1_3 of the sub-module 404c in the test valve tower 404.

[0193] PWM2_1 represents the modulation wave of the sub-module 405a in the accompanying test valve tower 405, and is used to drive the transistor IGBT2_1 of the sub-module 405a in the accompanying test valve tower 405; PWM2_2 represents the modulation wave of the sub-module 405b in the accompanying test valve tower 405, and is used to drive the transistor IGBT2_2 of the sub-module 405b in the accompanying test valve tower 405; PWM2_3 represents the modulation wave of the sub-module 405c in the accompanying test valve tower 405, and is used to drive the transistor IGBT2_3 of the sub-module 405c in the accompanying test valve tower 405.

[0194] Combined with Figure 14 , it can be seen that the computer device will determine the first difference between the amplitude of the test current i L and the amplitude of the preset reference current i ref , and after performing PI regulation and amplitude limiting processing on the first difference, a second result is obtained.

[0195] Taking the sub-module 404a as an example, if the test current i L is in the second direction, and s(i L ) takes 1, then the computer device uses the product of the second result and the preset duty cycle C as the basic offset. Furthermore, the computer device uses the first result S1_1 as the offset to be adjusted for the sub-module 404a. After that, the computer device determines the sum of the basic offset and the offset to be adjusted for the sub-module 404a, and performs a clipping process on the sum result to obtain PWM1_1.

[0196] Taking the sub-module 405a as an example, if the test current i L is in the first direction, and s(i L ) takes -1, then the computer device uses the negative value of the product of the second result and the preset duty cycle C as the basic offset. Furthermore, the computer device uses the negative value of the first result S2_1 as the offset to be adjusted for the sub-module 405a. After that, the computer device determines the difference between the basic offset and the offset to be adjusted for the sub-module 405a, and performs a clipping process on the difference result to obtain PWM1_1.

[0197] Figure 15 is a schematic diagram of the process of a control method in an embodiment of the present application. Please combine Figure 14 and Figure 15 , and the computer device can execute the control method according to the following process.

[0198] S1501, Obtain the test current of the valve tower test circuit.

[0199] S1502, Determine the first difference between the amplitude of the test current and the amplitude of the preset reference current.

[0200] S1503, Process the first difference to obtain the second result.

[0201] S1504, If the direction of the test current is the first direction, then use the negative value of the product of the second result and the preset duty cycle of the target valve tower as the basic offset.

[0202] S1505, If the direction of the test current is the second direction, then use the product of the second result and the preset duty cycle of the target valve tower as the basic offset.

[0203] S1506, For each sub-module in the target valve tower, determine the average value of the state of charge of each sub-module in the target valve tower.

[0204] S1507, Determine the second difference between the average value and the state of charge of the sub-module.

[0205] S1508, Process the second difference to obtain the first result.

[0206] S1509, if the direction of the test current is the first direction, then use the negative value of the first result as the offset to be adjusted for the sub-module. Here, the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the valve tower under test in the valve tower test circuit.

[0207] S1510, if the direction of the test current is the second direction, then use the first result as the offset to be adjusted for the sub-module. Here, the second direction is used to indicate that the valve tower under test in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

[0208] S1511, for each sub-module in the target valve tower, if the direction of the test current is the first direction, then determine the modulation wave of the sub-module according to the difference between the basic offset and the offset to be adjusted for the sub-module.

[0209] S1512, if the direction of the test current is the second direction, then determine the modulation wave of the sub-module according to the sum of the basic offset and the offset to be adjusted. Further optionally, after S1512, the computer device can also determine the carrier phase shift of each sub-module in the target valve tower according to the operating quantity and the preset angle of each sub-module in the target valve tower, so as to perform carrier phase shift on the modulation wave of the sub-module.

[0210] S1513, control each sub-module in the valve tower test circuit according to the modulation wave.

[0211] The processes of S1501 - S1513 can refer to the above embodiments and will not be elaborated here. It can be seen that this embodiment provides a control method for a valve tower test circuit capable of performing battery SOC balancing. Through the cooperation of the value ranges of Sm_n and C, the valve tower test can be made closer to the actual engineering conditions, so that the power of each sub-module in the same valve tower of the valve tower test circuit converges.

[0212] Figure 16 It is a schematic diagram of the result of a valve tower test circuit in an embodiment of the present application. As Figure 16 shown, the valve tower test circuit can include valve tower 1, valve tower 2, and a reactor. Valve tower 1 is the valve tower under test, which includes sub-module 1, sub-module 2, and sub-module 3; valve tower 2 is the accompanying valve tower, which includes sub-module 4, sub-module 5, and sub-module 6.

[0213] To verify the power balancing effect of this embodiment, set the SOCs of sub-module 1, sub-module 2, and sub-module 3 at the starting moment to be 55%, 45%, and 48% respectively, and the SOCs of sub-module 4, sub-module 5, and sub-module 6 to be 75%, 70%, and 65% respectively. The test parameters of the valve tower test circuit are as shown in Table 1 below.

[0214] In Table 1, the battery capacity, the maximum battery voltage, and the minimum battery voltage represent the parameters of the battery pack in the battery cells of each sub-module, and the platform design current represents the test current i of the valve tower test circuit. L The switching frequency of valve tower 1 and the switching frequency of valve tower 2 respectively indicate the control frequencies of the modulation waves of valve tower 1 and valve tower 2. In some embodiments, the switching frequency of the accompanying test valve tower can be fixed, and the switching frequency of the test sample valve tower is adjustable.

[0215] Table 1 Test Parameters

[0216] Battery capacity / Ah (ampere-hour) 100 Maximum battery voltage / V (volt) 1400 Minimum battery voltage / V 1150 Platform design current / A (ampere) 2000 Switching frequency of valve tower 1 / Hz (hertz) 50 Switching frequency of valve tower 2 / Hz 50 Inductance of reactor / mH (millihenry) 14

[0217] Figure 17 This is a schematic diagram of an effect in an embodiment of the present application. Figure 17 It shows the effect after using proportional regulation to determine the offset to be adjusted for each sub-module and using the basic offset and the offset to be adjusted for each sub-module to determine the modulation wave of each sub-module. It can be understood that the process of using proportional regulation to determine the offset to be adjusted for a sub-module is also the process of performing proportional regulation on the second difference to obtain a first result, and using the first result and the direction of the test current to determine the offset to be adjusted for the sub-module.

[0218] Figure 17 (a) shows the changes in SOC1 of sub-module 1, SOC2 of sub-module 2, and SOC3 of sub-module 3 in valve tower 1 over time. Figure 17 (b) shows the changes in SOC4 of sub-module 4, SOC5 of sub-module 5, and SOC6 of sub-module 6 in valve tower 2 over time. Combining Figure 17 (a) and Figure 17 (b), it can be seen that the SOCs of each sub-module in the same valve tower will approach the same over time.

[0219] Figure 18 This is another schematic diagram of an effect in an embodiment of the present application. Figure 17 It shows the effect after using PI regulation to determine the offset to be adjusted for each sub-module and using the basic offset and the offset to be adjusted for each sub-module to determine the modulation wave of each sub-module. It can be understood that the process of using PI regulation to determine the offset to be adjusted for a sub-module is also the process of performing PI regulation on the second difference to obtain a first result, and using the first result and the direction of the test current to determine the offset to be adjusted for the sub-module.

[0220] Figure 18 (a) shows the changes in SOC1 of sub-module 1, SOC2 of sub-module 2, and SOC3 of sub-module 3 in valve tower 1 over time. Figure 18 (b) shows the changes in SOC4 of sub-module 4, SOC5 of sub-module 5, and SOC6 of sub-module 6 in valve tower 2 over time.

[0221] Combination Figure 18 (a) and Figure 18 (b) It can be seen that due to the use of PI regulation to control the offset to be adjusted, when the SOC of the same valve tower is less than a certain value, PI regulation can effectively track, making the SOCs of each sub-module in the same valve tower quickly fit. For example, PI successfully tracks for valve tower 1 at about 50 s, and the SOCs of its sub-modules 1 to 3 approach the same at about 50 s. PI successfully tracks for valve tower 2 at about 44 s, and the SOCs of its sub-modules 4 to 6 approach the same at about 44 s. Among them, the convergence rate of the SOC before PI tracking depends on the initial value of the SOC of the battery pack in the sub-module, the battery capacity of the battery pack, and the limit value of the SOC.

[0222] Figure 19 It is a schematic diagram of the effect of the test current in the embodiment of the present application. As Figure 19 shown, due to the use of PI regulation and carrier phase shift, the test current is relatively smooth and has high stability.

[0223] It should be understood that although the steps in the flowcharts involved in the above-described embodiments are sequentially shown according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear indication in this article, the execution of these steps has no strict order limit, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-described embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or alternately with at least a part of other steps or steps in other steps.

[0224] Based on the same inventive concept, the embodiment of the present application also provides a control device for implementing the above-mentioned control method. The solution provided by this device to solve the problem is similar to the solution described in the above method. Therefore, the specific limitations in one or more embodiments of the following control devices can refer to the limitations on the control method in the above text, and will not be repeated here.

[0225] Figure 20 It is a structural block diagram of the control adjustment device in the embodiment of the present application. In an exemplary embodiment, as Figure 20 shown, a control device 2000 is provided, including: an acquisition module 2001, a determination module 2002, and a control module 2003, where:

[0226] The acquisition module 2001 is configured to acquire the test current of the valve tower test circuit.

[0227] A determination module 2002, configured to determine modulation waves of each sub-module of a target valve tower in a valve tower test circuit according to a test current and a preset reference current.

[0228] A control module 2003, configured to control each sub-module in the valve tower test circuit according to the modulation waves.

[0229] In the above control device, since it is necessary to obtain the test current of the valve tower test circuit and determine the modulation waves of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current, the determined modulation waves of each sub-module can make the test current of the valve tower test circuit gradually approach the preset reference current, improving the accuracy of the test process. Further, after controlling each sub-module in the valve tower test circuit according to the modulation waves, it is possible to control the valve tower test circuit during the test process to verify the reliability of the sub-module.

[0230] Figure 21 This is a structural block diagram of a determination module in an embodiment of the present application. In an exemplary embodiment, as Figure 21 shown, the determination module 2002 includes:

[0231] A first determination unit 2101, configured to determine a first difference between the amplitude of the test current and the amplitude of the preset reference current.

[0232] A second determination unit 2102, configured to determine a basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty cycle of the target valve tower.

[0233] A third determination unit 2103, configured to determine the modulation waves of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower.

[0234] Figure 22 This is a structural block diagram of a third determination unit in an embodiment of the present application. In an exemplary embodiment, as Figure 22 shown, the third determination unit 2103 includes:

[0235] A first determination subunit 2201, configured to determine, for each sub-module in the target valve tower, a to-be-adjusted offset of the sub-module according to the direction of the test current and the charged state of the sub-module.

[0236] A second determination subunit 2202, configured to determine the modulation wave of the sub-module according to the basic offset and the to-be-adjusted offset of the sub-module.

[0237] Optionally, the first determination subunit 2201 is further configured to determine an average value of the charged states of each sub-module in the target valve tower; determine a second difference between the average value and the charged state of the sub-module; and determine the to-be-adjusted offset of the sub-module according to the second difference and the direction of the test current.

[0238] Optionally, the first determination subunit 2201 is further configured to process the second difference to obtain a first result; if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted for the sub-module; the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the test valve tower in the valve tower test circuit; if the direction of the test current is the second direction, the first result is used as the offset to be adjusted for the sub-module; the second direction is used to indicate that the test valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

[0239] Figure 23 This is a structural block diagram of a second determination unit in an embodiment of the present application. In an exemplary embodiment, as Figure 23 shown, the second determination unit 2102 includes:

[0240] A processing subunit 2301, configured to process the first difference to obtain a second result.

[0241] A third determination subunit 2302, configured to, if the direction of the test current is the first direction, use the negative value of the product of the second result and the preset duty ratio as the basic offset.

[0242] A fourth determination subunit 2303, configured to, if the direction of the test current is the second direction, use the product of the second result and the preset duty ratio as the basic offset.

[0243] Optionally, the second determination subunit 2202 is further configured to, for each sub-module in the target valve tower, if the direction of the test current is the first direction, determine the modulation wave of the sub-module according to the difference between the basic offset and the offset to be adjusted for the sub-module; if the direction of the test current is the second direction, determine the modulation wave of the sub-module according to the sum of the basic offset and the offset to be adjusted.

[0244] Optionally, the control module 2003 is further configured to, when the target valve tower is the test valve tower in the valve tower test circuit, charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the test valve tower; when the target valve tower is the accompanying valve tower in the valve tower test circuit, charge each sub-module in the test valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the accompanying valve tower.

[0245] Optionally, the determination module 2002 is further configured to determine the carrier phase shift of each sub-module in the target valve tower according to the number of operating sub-modules and the preset angle in the target valve tower; determine the modulation wave of each sub-module of the target valve tower according to the test current, the preset reference current, and the carrier phase shift of each sub-module in the target valve tower.

[0246] Each module in the above control device can be implemented in whole or in part by software, hardware, or a combination thereof. Each of the above modules can be embedded in the processor of the computer device in hardware form or be independent of it, or can be stored in the memory of the computer device in software form, so that the processor can call and execute the operations corresponding to each of the above modules.

[0247] Figure 24 This is the internal structure diagram of the computer device in the embodiment of the present application. In an exemplary embodiment, a computer device is provided. The computer device can be a server, and its internal structure diagram can be as Figure 24 shown. The computer device includes a processor, a memory, an input / output interface (Input / Output, abbreviated as I / O), and a communication interface. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface is connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store relevant data. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with external terminals through a network connection. The computer program, when executed by the processor, implements a control method.

[0248] Those skilled in the art can understand that Figure 24 the structure shown in

[0249] is only a block diagram of some structures related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine some components, or have a different component layout.

[0250] Obtain the test current of the valve tower test circuit;

[0251] Determine the modulation waves of each sub-module of the target valve tower in the valve tower test circuit according to the test current and a preset reference current;

[0252] Control each sub-module in the valve tower test circuit according to the modulation waves.

[0253] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0254] Determine a first difference between the amplitude of the test current and the amplitude of the preset reference current; determine the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower; determine the modulation wave of each sub-module in the target valve tower according to the basic offset of each sub-module in the target valve tower.

[0255] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0256] For each sub-module in the target valve tower, determine the offset to be adjusted of the sub-module according to the direction of the test current and the charge state of the sub-module; determine the modulation wave of the sub-module according to the basic offset and the offset to be adjusted of the sub-module.

[0257] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0258] Determine the average value of the charge states of each sub-module in the target valve tower; determine a second difference between the average value and the charge state of the sub-module; determine the offset to be adjusted of the sub-module according to the second difference and the direction of the test current.

[0259] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0260] Process the second difference to obtain a first result; if the direction of the test current is the first direction, use the negative value of the first result as the offset to be adjusted of the sub-module; the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the test valve tower in the valve tower test circuit; if the direction of the test current is the second direction, use the first result as the offset to be adjusted of the sub-module; the second direction is used to indicate that the test valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

[0261] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0262] Process the first difference to obtain a second result; if the direction of the test current is the first direction, use the negative value of the product of the second result and the preset duty ratio as the basic offset; if the direction of the test current is the second direction, use the product of the second result and the preset duty ratio as the basic offset.

[0263] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0264] For each sub-module in the target valve tower, if the direction of the test current is the first direction, determine the modulation wave of the sub-module according to the difference between the basic offset and the offset to be adjusted of the sub-module; if the direction of the test current is the second direction, determine the modulation wave of the sub-module according to the sum of the basic offset and the offset to be adjusted.

[0265] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0266] When the target valve tower is the valve tower under test in the valve tower test circuit, charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the valve tower under test; when the target valve tower is the accompanying valve tower in the valve tower test circuit, charge each sub-module in the valve tower under test in the valve tower test circuit according to the modulation wave of each sub-module in the accompanying valve tower.

[0267] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0268] Determine the carrier phase shift of each sub-module in the target valve tower according to the number of operating sub-modules and the preset angle in the target valve tower; determine the modulation wave of each sub-module of the target valve tower according to the test current, the preset reference current and the carrier phase shift of each sub-module in the target valve tower.

[0269] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0270] Obtain the test current of the valve tower test circuit;

[0271] Determine the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0272] Control each sub-module in the valve tower test circuit according to the modulation wave.

[0273] In one embodiment, when the computer program is executed by the processor, the following steps are further implemented:

[0274] Determine the first difference between the amplitude of the test current and the amplitude of the preset reference current; determine the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current and the preset duty ratio of the target valve tower; determine the modulation wave of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower.

[0275] In one embodiment, when the computer program is executed by the processor, the following steps are further implemented:

[0276] For each sub-module in the target valve tower, determine the offset to be adjusted for the sub-module according to the direction of the test current and the charged state of the sub-module; determine the modulation wave of the sub-module according to the basic offset and the offset to be adjusted for the sub-module.

[0277] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0278] Determine the average value of the charged states of the sub-modules in the target valve tower; determine the second difference between the average value and the charged state of the sub-module; determine the offset to be adjusted for the sub-module according to the second difference and the direction of the test current.

[0279] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0280] Process the second difference to obtain a first result; if the direction of the test current is the first direction, use the negative value of the first result as the offset to be adjusted for the sub-module; the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the tested valve tower in the valve tower test circuit; if the direction of the test current is the second direction, use the first result as the offset to be adjusted for the sub-module; the second direction is used to indicate that the tested valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

[0281] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0282] Process the first difference to obtain a second result; if the direction of the test current is the first direction, use the negative value of the product of the second result and the preset duty cycle as the basic offset; if the direction of the test current is the second direction, use the product of the second result and the preset duty cycle as the basic offset.

[0283] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0284] For each sub-module in the target valve tower, if the direction of the test current is the first direction, determine the modulation wave of the sub-module according to the difference between the basic offset and the offset to be adjusted for the sub-module; if the direction of the test current is the second direction, determine the modulation wave of the sub-module according to the sum of the basic offset and the offset to be adjusted.

[0285] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0286] When the target valve tower is the valve tower under test in the valve tower test circuit, charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation waves of the sub-modules in the valve tower under test; when the target valve tower is the accompanying valve tower in the valve tower test circuit, charge each sub-module in the valve tower under test in the valve tower test circuit according to the modulation waves of the sub-modules in the accompanying valve tower.

[0287] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0288] Determine the carrier phase shift of each sub-module in the target valve tower according to the operating quantity and preset angle of each sub-module in the target valve tower; determine the modulation waves of each sub-module of the target valve tower according to the test current, the preset reference current, and the carrier phase shift of each sub-module in the target valve tower.

[0289] In one embodiment, a computer program product is provided, including a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0290] Obtain the test current of the valve tower test circuit;

[0291] Determine the modulation waves of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0292] Control each sub-module in the valve tower test circuit according to the modulation waves.

[0293] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0294] Determine the first difference between the amplitude of the test current and the amplitude of the preset reference current; determine the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower; determine the modulation waves of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower.

[0295] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0296] For each sub-module in the target valve tower, determine the offset to be adjusted of the sub-module according to the direction of the test current and the charged state of the sub-module; determine the modulation wave of the sub-module according to the basic offset and the offset to be adjusted of the sub-module.

[0297] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0298] Determine the average value of the state of charge of each sub-module in the target valve tower; determine the second difference between the average value and the state of charge of the sub-module; determine the adjustment offset to be adjusted for the sub-module according to the second difference and the direction of the test current.

[0299] In one embodiment, when the computer program is executed by the processor, the following steps are further implemented:

[0300] Process the second difference to obtain a first result; if the direction of the test current is the first direction, take the negative value of the first result as the adjustment offset to be adjusted for the sub-module; the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the tested valve tower in the valve tower test circuit; if the direction of the test current is the second direction, take the first result as the adjustment offset to be adjusted for the sub-module; the second direction is used to indicate that the tested valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

[0301] In one embodiment, when the computer program is executed by the processor, the following steps are further implemented:

[0302] Process the first difference to obtain a second result; if the direction of the test current is the first direction, take the negative value of the product of the second result and the preset duty ratio as the basic offset; if the direction of the test current is the second direction, take the product of the second result and the preset duty ratio as the basic offset.

[0303] In one embodiment, when the computer program is executed by the processor, the following steps are further implemented:

[0304] For each sub-module in the target valve tower, if the direction of the test current is the first direction, determine the modulation wave of the sub-module according to the difference between the basic offset and the adjustment offset to be adjusted for the sub-module; if the direction of the test current is the second direction, determine the modulation wave of the sub-module according to the sum of the basic offset and the adjustment offset to be adjusted.

[0305] In one embodiment, when the computer program is executed by the processor, the following steps are further implemented:

[0306] When the target valve tower is the tested valve tower in the valve tower test circuit, charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the tested valve tower; when the target valve tower is the accompanying valve tower in the valve tower test circuit, charge each sub-module in the tested valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the accompanying valve tower.

[0307] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0308] Determine the carrier phase shift of each sub-module in the target valve tower according to the running quantity and preset angle of each sub-module in the target valve tower; determine the modulation wave of each sub-module in the target valve tower according to the test current, preset reference current, and carrier phase shift of each sub-module in the target valve tower.

[0309] Those of ordinary skill in the art can understand that all or part of the processes of implementing the methods in the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the various embodiments provided in the present application can include at least one of non-volatile and volatile memories. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the various embodiments provided in the present application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the various embodiments provided in the present application can be general-purpose processors, central processors, graphics processors, digital signal processors, programmable logic devices, data processing logics based on quantum computing, etc., without limitation.

[0310] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0311] The embodiments described above merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation to the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.

Claims

1. A control method, characterized in that, the method includes: obtaining the test current of the valve tower test circuit; determining the modulation waves of each sub-module of the target valve tower in the valve tower test circuit according to the test current and a preset reference current; controlling each sub-module in the valve tower test circuit according to the modulation waves.

2. The method according to claim 1, characterized in that, the determining the modulation waves of each sub-module of the target valve tower in the valve tower test circuit according to the test current and a preset reference current includes: determining a first difference between the amplitude of the test current and the amplitude of the preset reference current; determining the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower; determining the modulation waves of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower.

3. The method according to claim 2, characterized in that, the determining the modulation waves of each sub-module of the target valve tower according to the basic offset of each sub-module in the target valve tower includes: for each sub-module in the target valve tower, determining the offset to be adjusted of the sub-module according to the direction of the test current and the charged state of the sub-module; determining the modulation wave of the sub-module according to the basic offset and the offset to be adjusted of the sub-module.

4. The method according to claim 3, characterized in that, the determining the offset to be adjusted of the sub-module according to the direction of the test current and the charged state of the sub-module includes: determining the average value of the charged states of each sub-module in the target valve tower; determining a second difference between the average value and the charged state of the sub-module; determining the offset to be adjusted of the sub-module according to the second difference and the direction of the test current.

5. The method according to claim 4, characterized in that, the determining the offset to be adjusted of the sub-module according to the second difference and the direction of the test current includes: processing the second difference to obtain a first result; if the direction of the test current is the first direction, taking the negative value of the first result as the offset to be adjusted of the sub-module; the first direction is used to indicate that the accompanying valve tower in the valve tower test circuit charges the test valve tower in the valve tower test circuit; if the direction of the test current is the second direction, taking the first result as the offset to be adjusted of the sub-module; the second direction is used to indicate that the test valve tower in the valve tower test circuit charges the accompanying valve tower in the valve tower test circuit.

6. The method according to claim 5, characterized in that, the determining the basic offset of each sub-module in the target valve tower according to the first difference, the direction of the test current, and the preset duty ratio of the target valve tower includes: processing the first difference to obtain a second result; if the direction of the test current is the first direction, taking the negative value of the product of the second result and the preset duty ratio as the basic offset; If the direction of the test current is the second direction, then the product of the second result and the preset duty cycle is used as the base offset.

7. The method according to claim 5 or 6, wherein, determining the modulation wave of the sub-module according to the base offset and the offset to be adjusted of the sub-module includes: For each sub-module in the target valve tower, if the direction of the test current is the first direction, then determine the modulation wave of the sub-module according to the difference between the base offset and the offset to be adjusted of the sub-module; If the direction of the test current is the second direction, then determine the modulation wave of the sub-module according to the sum of the base offset and the offset to be adjusted.

8. The method according to any one of claims 1-6, wherein, controlling each sub-module in the valve tower test circuit according to the modulation wave includes: When the target valve tower is the tested valve tower in the valve tower test circuit, charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the tested valve tower; When the target valve tower is the accompanying valve tower in the valve tower test circuit, charge each sub-module in the tested valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the accompanying valve tower.

9. The method according to any one of claims 1-6, wherein, determining the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current includes: Determine the carrier phase shift of each sub-module in the target valve tower according to the operation number and the preset angle of each sub-module in the target valve tower; Determine the modulation wave of each sub-module of the target valve tower according to the test current, the preset reference current and the carrier phase shift of each sub-module in the target valve tower.

10. A control device, wherein, the device includes: an acquisition module for acquiring the test current of the valve tower test circuit; a determination module for determining the modulation wave of each sub-module of the target valve tower in the valve tower test circuit according to the test current and the preset reference current; a control module for controlling each sub-module in the valve tower test circuit according to the modulation wave.

11. A computer device, including a memory and a processor, the memory stores a computer program, wherein, when the processor executes the computer program, the steps of the method according to any one of claims 1 to 9 are implemented.

12. A computer-readable storage medium, on which a computer program is stored, wherein, when the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 9 are implemented.

13. A computer program product, including a computer program, wherein, when the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 9 are implemented.

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