Far-end plasma source base and semiconductor process equipment

Abstract

The invention discloses a far-end plasma source base and semiconductor process equipment. The far-end plasma source pedestal comprises an upper pedestal and a lower pedestal. A gas guide pipeline and a ventilation device located below the gas guide pipeline are arranged in the lower base. Plasma enters the gas guide pipeline from the upper base. The ventilation device comprises at least one gas uniformizing layer, at least one protective gas inlet and at least one group of gas channels. The at least one protective gas inlet is located at the bottom of the at least one gas uniformizing layer, and the at least one group of gas channels are communicated with the at least one gas uniformizing layer and the gas guide pipeline.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device manufacturing, and particularly to the design of a remote plasma source base. Background Art

[0002] A remote plasma source (RPS), also known as a remote high-density plasma generator, is a core equipment in the semiconductor and chip manufacturing processes. The remote plasma source (RPS) excites gas through radio frequency or microwave to generate plasma. The free radicals (activated gas molecules) generated after the gas is excited can effectively clean the silicon dust or particulate matter deposited inside the chip structure. The remote plasma source (RPS) is usually arranged above the process chamber, and the remote plasma source (RPS) transports the plasma to the process chamber through a remote plasma transmission channel.

[0003] For example, when the process chamber needs to be cleaned after the process in a plasma enhanced chemical vapor deposition equipment, the remote plasma source generates F plasma to clean the thin film in the chamber. However, due to the strong corrosiveness of F ions, the surfaces of the parts on its transmission path are easily corroded, generating particles and contaminating the wafers. The base of the remote plasma source (RPS) is the first part to be bombarded by the plasma, so its surface is most easily corroded.

[0004] Therefore, there is an urgent need for a technical solution that can reduce plasma bombardment and corrosion. Summary of the Invention

[0005] In order to reduce the bombardment and corrosion of the surface of the remote plasma source base by plasma and improve the particle contamination inside the chamber, the present invention provides a remote plasma source base and a semiconductor process equipment.

[0006] The present invention provides a remote plasma source base, including an upper base and a lower base.

[0007] The lower base internally has a gas guiding pipeline and a ventilation device located below the gas guiding pipeline, and the plasma enters the gas guiding pipeline from the upper base.

[0008] The ventilation device includes at least one gas distribution layer, at least one protective gas inlet, and at least one set of gas channels.

[0009] The at least one protective gas inlet is located at the bottom of the at least one gas distribution layer, and the at least one set of gas channels is communicated with the at least one gas distribution layer and the gas guiding pipeline.

[0010] In one embodiment, the at least one gas distribution layer includes a first gas distribution layer and a second gas distribution layer. The at least one set of gas channels includes a first set of gas channels and a second set of gas channels. The at least one protective gas inlet is located at the bottom of the first gas distribution layer. One end of the first set of gas channels communicates with the top of the first gas distribution layer, and the other end communicates with the bottom of the second gas distribution layer. One end of the second set of gas channels communicates with the bottom of the gas guiding pipeline, and the other end communicates with the top of the second gas distribution layer.

[0011] In one embodiment, the cavity space in the second gas distribution layer is larger than the cavity space in the first gas distribution layer.

[0012] In one embodiment, the number of gas channels in the second set of gas channels is greater than the number of gas channels in the first set of gas channels.

[0013] In one embodiment, a plasma transmission pipeline is provided inside the upper base. The gas guiding pipeline has a first end at the upper part, and second and third ends respectively located on the left and right sides. The first end communicates with the lower end of the plasma transmission pipeline. The plasma enters the first end from the plasma transmission pipeline and is output from the second and third ends.

[0014] In one embodiment, the end of the plasma transmission pipeline is trumpet-shaped, and the end with the larger opening of the trumpet shape is docked with the first end.

[0015] In one embodiment, the end of the second end is trumpet-shaped, and the end with the smaller opening of the trumpet shape faces outward; the end of the third end is trumpet-shaped, and the end with the smaller opening of the trumpet shape faces outward.

[0016] In one embodiment, the connection between the first end and the second end is a rounded corner structure, and the connection between the first end and the third end is a rounded corner structure.

[0017] In one embodiment, while the plasma enters the first end from the upper base and is output from the second and third ends, the protective gas is introduced into the lower base from the at least one protective gas inlet.

[0018] The present invention also provides a semiconductor processing apparatus, including a remote plasma generation device (RPS), a distal plasma source base as described above, a first gas delivery pipeline, a second gas delivery pipeline, and a dual process chamber.

[0019] The remote plasma generation device (RPS) is used to generate plasma.

[0020] The distal plasma source base supports the remote plasma generation device.

[0021] One end of the first gas delivery pipeline communicates with the second end of the remote plasma source base, and the other end communicates with one of the chambers in the dual process chamber.

[0022] One end of the second gas delivery pipeline communicates with the third end of the remote plasma source base, and the other end communicates with the other chamber in the dual process chamber.

[0023] The semiconductor processing equipment may further include a protective gas generating device for generating a protective gas, which is transmitted to the protective gas inlet at the bottom of the remote plasma source base.

[0024] The remote plasma source base and the semiconductor processing equipment provided by the present invention have the following beneficial technical effects:

[0025] First, the remote plasma source base of the present invention is designed as a split structure, the inner flow channel of the base can be made into a trumpet hole structure, and the corners can be rounded. The trumpet hole structure can increase the cross-sectional area of the flow channel, reduce the plasma flow velocity, and reduce the impact corrosion of the plasma on the surface of the base;

[0026] Second, the present invention adds ventilation holes to the bottom surface of the remote plasma source base. When plasma flows through, a protective gas is introduced from the bottom surface of the base, and the impact of the plasma on the bottom surface is reduced by the introduction of the protective gas, thereby playing a role in protecting the parts;

[0027] Third, the ventilation flow channel on the bottom surface of the remote plasma source base of the present invention can perform multiple gas homogenizations, ensuring that the introduced protective gas is more evenly distributed, has less influence on the plasma flow field, and can also adjust the flow field and flow rate of the protective gas by changing the ventilation structure and layout. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above invention content of the present invention and the following specific implementation manners will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are only examples of the claimed invention. In the drawings, the same reference numerals represent the same or similar elements.

[0029] Figure 1 Shows a schematic diagram of the application environment of a remote plasma source base according to an embodiment of the present invention;

[0030] Figure 2 Shows a cross-sectional view of a remote plasma source base according to an embodiment of the present invention;

[0031] Figure 3 Shows a cross-sectional view of a remote plasma source base of the prior art;

[0032] Figure 4A cross-sectional view of a remote plasma source base according to an embodiment of the present invention is shown. Detailed Description of the Invention

[0033] The detailed features and advantages of the present invention are described in detail in the following detailed description. The content is sufficient for any person skilled in the art to understand the technical content of the present invention and implement it accordingly. According to the specification, claims and drawings disclosed in this specification, a person skilled in the art can easily understand the related purposes and advantages of the present invention. Although the description of the present invention will be introduced in conjunction with preferred embodiments, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without these details. In addition, in order to avoid confusion or obscuring the key points of the present invention, some specific details will be omitted in the description.

[0034] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "mounted", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0035] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the related drawings. This relative term is only for convenience of description and does not mean that the device described needs to be manufactured or operated in a specific orientation, so it should not be construed as a limitation of the present invention.

[0036] It can be understood that although terms such as "first", "second", and "third" can be used here to describe various components, channels, components, regions, layers, and / or parts, these components, channels, components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, components, regions, layers, and / or parts. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0037] As used in this application and the claims, unless the context clearly indicates otherwise, words such as "a", "an", "one", and / or "the" are not specifically singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0038] In some embodiments, numbers are used to describe the components and attribute quantities. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately", or "substantially" in some examples. Unless otherwise specified, "about", "approximately", or "substantially" indicate that the said numbers allow a variation of ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, and these approximate values may change according to the characteristics required by individual embodiments. In some embodiments, the numerical parameters should consider the specified significant digits and adopt the method of retaining the general number of digits. Although the numerical ranges and parameters used in some embodiments of this application to confirm the breadth of their scope are approximate values, in specific embodiments, such numerical settings are as precise as possible within the feasible range.

[0039] At the same time, this application uses specific words to describe the embodiments of this application. Such as "an embodiment", "one embodiment", and / or "some embodiments" mean a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that the "an embodiment" or "one embodiment" or "an alternative embodiment" mentioned twice or more at different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application can be appropriately combined.

[0040] Figure 1 The schematic diagram of the application environment of the remote plasma source base according to an embodiment of the present invention is shown.

[0041] The remote plasma source base (hereinafter referred to as the RPS base) 101 is used to support the RPS and introduce the plasma generated by the RPS into the process chamber.

[0042] As Figure 1 shown, the remote plasma source base 101 is located under the remote plasma generation device (RPS) (not shown). The remote plasma source base 101 is a split structure. The remote plasma source base 101 includes an upper base 102 and a lower base 103. The upper base 102 has a plasma transmission pipeline 104 inside. The upper end of the plasma transmission pipeline 104 is connected to the remote plasma generation device (RPS). The lower base 103 has a gas guiding pipeline 105 and a ventilation device 110 inside.

[0043] The ventilation device 110 is in communication with the gas guiding pipeline 105 and is located below the gas guiding pipeline 105. After the protective gas enters from the bottom of the ventilation device 110, it enters the gas guiding pipeline 105.

[0044] The ventilation device 110 includes at least one protective gas inlet, at least one gas leveling layer, and at least one set of gas channels. Among them, at least one protective gas inlet is located at the bottom of at least one gas leveling layer, and at least one set of gas channels is in communication with at least one gas leveling layer and the gas guiding pipeline.

[0045] In one embodiment, the ventilation device 110 can be a double-layer structure. That is, the at least one set of gas channels includes a first set of gas channels and a second set of gas channels; the at least one gas leveling layer includes a first gas leveling layer and a second gas leveling layer. The at least one protective gas inlet is located at the bottom of the first gas leveling layer. One end of the first set of gas channels is in communication with the top of the first gas leveling layer, and the other end is in communication with the bottom of the second gas leveling layer. One end of the second set of gas channels is in communication with the bottom of the gas guiding pipeline, and the other end is in communication with the top of the second gas leveling layer.

[0046] The gas guiding pipeline 105 is in communication with the plasma transmission pipeline 104.

[0047] The gas guiding pipeline 105 has a first end located at the upper part, and second and third ends located on the left and right sides respectively. Plasma enters the first end from the plasma transmission pipeline 104 and flows out from the second and third ends.

[0048] The first end of the gas guiding pipeline 105 is in communication with the lower end of the plasma transmission pipeline 104.

[0049] The second end of the gas guiding pipeline 105 is in communication with the first gas delivery pipeline 106.

[0050] The third end of the gas guiding pipeline 105 is in communication with the second gas delivery pipeline 107.

[0051] One end of the first gas delivery pipeline 106 is in communication with the second end of the remote plasma source base, and the other end is in communication with the first chamber 108 in the dual-process chamber.

[0052] One end of the second gas delivery pipeline 107 is in communication with the third end of the remote plasma source base, and the other end is in communication with the second chamber 109 in the dual-process chamber.

[0053] In one embodiment, the first gas delivery pipeline 106 is a folded structure, and the first gas delivery pipeline 106 transmits plasma to the first chamber 108.

[0054] In one embodiment, the second gas delivery pipeline 107 is of a folded structure, and the second gas delivery pipeline 107 transports plasma to the second chamber 109.

[0055] It should be noted that the gas guiding pipeline of the present invention can be adaptively modified according to whether the process chamber is a single-chamber, double-chamber or multi-chamber.

[0056] Figure 2 The cross-sectional view of the remote plasma source base according to an embodiment of the present invention is shown.

[0057] The end of the plasma transmission pipeline 104 of the upper base 102 is of a horn shape, and the end with the larger opening of the horn shape is docked with the first end of the gas guiding pipeline 105 of the lower base 103.

[0058] The end of the second end of the gas guiding pipeline 105 is of a horn shape, and the end with the smaller opening of the horn shape faces outward and is docked with one end of the first gas delivery pipeline 106.

[0059] The end of the third end of the gas guiding pipeline 105 is of a horn shape, and the end with the smaller opening of the horn shape faces outward and is aligned with one end of the second gas delivery pipeline 107.

[0060] The connection between the first end and the second end is a rounded corner structure 111.

[0061] The connection between the first end and the third end is a rounded corner structure 111.

[0062] One of the purposes of making the remote plasma source base of the present invention into a split structure (i.e., divided into an upper base and a lower base) is to facilitate the processing of the internal flow channel of the base into a horn hole and a structure with rounded corners. In this way, after the plasma comes out from the RPS, it first passes through the horn hole and the rounded corner area, which will reduce its flow rate and reduce the impact on the bottom surface.

[0063] The flow direction of the plasma is as Figure 2 shown by the arrow. From Figure 2 It can be seen that after the plasma flows from the RPS into the plasma transmission pipeline 104, it flows into the gas guiding pipeline 105 of the lower base 103 along the direction of the horn hole and the rounded corner, and flows towards the second end and the third end. After the plasma enters the remote plasma source base, the horn hole and the rounded corner structure can increase the cross-sectional area of the flow channel, reduce the plasma flow rate, and reduce the impact corrosion of the plasma on the surface of the base.

[0064] In contrast, Figure 3 The cross-sectional view of the remote plasma source base of the prior art is shown. As Figure 3As shown, the remote plasma source base is not split, and the flow direction of the plasma is from simple vertical to horizontal. This traditional structure causes the RPS base to be bombarded by the plasma for a long time, and the surface of the base is thus corroded.

[0065] Figure 4 The cross-sectional view of the remote plasma source base according to an embodiment of the present invention is shown. The ventilation device 110 is located below the gas guiding pipeline 105 and is communicated with the gas guiding pipeline 105.

[0066] The ventilation device 110 can be a single-layer structure, a double-layer structure or a multi-layer structure.

[0067] In a preferred embodiment, the ventilation device 110 is a double-layer structure. The ventilation device 110 has a first gas distribution layer 401, a second gas distribution layer 402, a first group of gas channels 404 and a second group of gas channels 405.

[0068] The bottom of the first gas distribution layer 401 has a protective gas inlet 403.

[0069] There is a first group of gas channels 404 between the first gas distribution layer 401 and the second gas distribution layer 402. One end of the first group of gas channels 404 is communicated with the top of the first gas distribution layer 401, and the other end is communicated with the bottom of the second gas distribution layer 402.

[0070] There is a second group of gas channels 405 between the second gas distribution layer 402 and the gas guiding pipeline 105. One end of the second group of gas channels 405 is communicated with the bottom of the gas guiding pipeline 105, and the other end is communicated with the top of the second gas distribution layer 402.

[0071] In one embodiment, each gas channel of the first group of gas channels 404 is cylindrical.

[0072] In one embodiment, each gas channel of the second group of gas channels 405 is conical.

[0073] In one embodiment, the number of gas channels of the second group of gas channels 405 is greater than the number of gas channels of the first group of gas channels 404.

[0074] The flow direction of the protective gas is as Figure 4 shown, entering the first gas distribution layer 401 from the protective gas inlet 403. After being evenly distributed by the first gas distribution layer 401, the protective gas enters the second gas distribution layer 402 through the first group of gas channels 404 for further even distribution, and finally enters the gas guiding pipeline 105 through the second group of gas channels 405.

[0075] In one embodiment, the protective gas may be nitrogen. However, the present invention is not limited thereto, and any gas that can protect the RPS base from plasma bombardment shall be regarded as the protective gas described in the present invention.

[0076] In one embodiment, the top view shape of the first gas distribution layer 401 is rectangular.

[0077] In one embodiment, the top view shape of the second gas distribution layer 402 is rectangular.

[0078] In one embodiment, the cavity space of the second gas distribution layer 402 is larger than that of the first gas distribution layer 401 so that the protective gas can be further evenly distributed in the second gas distribution layer 402.

[0079] While the plasma enters the first end of the gas guiding pipeline 105 from the upper base 102 and outputs from the second end and the third end, the protective gas, such as N2, is introduced into the lower base 103 from the protective gas inlet 403 to reduce the impact of the plasma on the surface of the base and achieve the effect of protecting the surface.

[0080] The gas supply device 110 provided by the present invention is used to introduce the protective gas and evenly distribute the protective gas. The gas supply device 110 can be designed to perform multiple times of gas distribution. For example, it can perform two times of gas distribution (the first gas distribution layer and the second gas distribution layer), so that the gas distribution of the protective gas entering the base is more uniform, the influence on the plasma flow field is smaller, and the flow field and flow rate of the protective gas can also be adjusted by changing the structure and arrangement of the gas supply.

[0081] In one embodiment, the structure of the gas supply device, such as the length, width, and height of the first gas distribution layer and the length, width, and height of the second gas distribution layer, the number and shape of the first group of gas channels, and the number and shape of the second group of gas channels, can all be adaptively adjusted to achieve the desired flow field and flow rate of the protective gas.

[0082] The present invention also provides a semiconductor processing apparatus. The semiconductor processing apparatus includes a remote plasma generation device (RPS), a distal plasma source base as described above, a first gas delivery pipeline, a second gas delivery pipeline, and a dual process chamber.

[0083] The remote plasma generation device (RPS) is used to generate plasma.

[0084] The distal plasma source base supports the remote plasma generation device.

[0085] One end of the first gas delivery pipeline is communicated with the second end of the distal plasma source base, and the other end is communicated with one of the chambers in the dual process chamber.

[0086] One end of the second gas delivery pipeline communicates with the third end of the remote plasma source base, and the other end communicates with another chamber in the dual process chamber.

[0087] The semiconductor process equipment further includes a protective gas generating device for generating a protective gas, which is transmitted to the protective gas inlet at the bottom of the remote plasma source base.

[0088] In one embodiment, the protective gas generating device is an independent device located outside the dual process chamber.

[0089] The remote plasma source base and the semiconductor process equipment provided by the present invention have the following beneficial technical effects:

[0090] First, the present invention designs the remote plasma source base into a split structure, the flow channel in the base can be made into a trumpet hole structure, and the corners can be rounded. The trumpet hole structure can increase the cross-sectional area of the flow channel, reduce the plasma flow velocity, and reduce the impact corrosion of the plasma on the surface of the base.

[0091] Second, the present invention adds ventilation holes to the bottom surface of the remote plasma source base. When plasma flows through, a protective gas is introduced from the bottom surface of the base, and the impact of the plasma on the bottom surface is reduced by the introduction of the protective gas, thereby playing a role in protecting the parts.

[0092] Third, the air flow channels on the bottom surface of the remote plasma source base of the present invention can perform multiple gas homogenizations, ensuring that the introduced protective gas is more evenly distributed, having less influence on the plasma flow field, and the flow field and flow rate of the protective gas can also be adjusted by changing the ventilation structure and arrangement.

[0093] The terms and expressions used above are only for description, and the present invention should not be limited to these terms and expressions. Using these terms and expressions does not mean excluding any equivalent features of the illustration and description (or parts thereof). It should be recognized that various modifications may also be included within the scope of the claims. Other modifications, variations, and substitutions may also exist. Accordingly, the claims should be regarded as covering all such equivalents.

[0094] Similarly, it should be noted that, in order to simplify the description of the present application disclosure and thus help the understanding of one or more embodiments of the invention, in the foregoing description of the embodiments of the present application, sometimes multiple features are merged into one embodiment, drawing, or description thereof. However, this disclosure method does not mean that the features required by the subject matter of the present application are more than those mentioned in the claims.

[0095] Similarly, it should be noted that although the present invention has been described with reference to the current specific embodiments, those of ordinary skill in the art should recognize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, as long as the changes and modifications of the above embodiments are within the scope of the spirit of the present invention, they will fall within the scope of the claims of this application.

Claims

1. A remote plasma source base, characterized in that: include: an upper base and a lower base; The lower base has a gas guide pipeline and a ventilation device located below the gas guide pipeline, and plasma enters the gas guide pipeline from the upper base; The ventilation device comprises at least one gas-uniform layer, at least one protective gas inlet, and at least one group of gas channels; The at least one protective gas inlet is located at the bottom of the at least one gas homogenizing layer, and the at least one group of gas channels is in communication with the at least one gas homogenizing layer and the gas guide pipeline.

2. The remote plasma source base according to claim 1, characterized in that: The at least one gas uniformity layer includes a first gas uniformity layer and a second gas uniformity layer, and the at least one group of gas channels includes a first group of gas channels and a second group of gas channels; the at least one protective gas inlet is located at the bottom of the first gas uniformity layer; one end of the first group of gas channels is connected to the top of the first gas uniformity layer, and the other end is connected to the bottom of the second gas uniformity layer; one end of the second group of gas channels is connected to the bottom of the gas guide pipeline, and the other end is connected to the top of the second gas uniformity layer.

3. The remote plasma source base according to claim 2, characterized in that: The cavity space in the second uniform gas layer is larger than the cavity space in the first uniform gas layer.

4. The remote plasma source base according to claim 2, characterized in that: The number of gas channels of the second group of gas channels is greater than the number of gas channels of the first group of gas channels.

5. The remote plasma source base according to claim 1, characterized in that: A plasma transmission pipeline is provided inside the upper base; the gas guide pipeline has a first end located at the top, and a second end and a third end located on the left and right sides respectively; the first end is connected to the lower end of the plasma transmission pipeline; the plasma enters the first end from the plasma transmission pipeline, and is output from the second end and the third end.

6. The remote plasma source base according to claim 5, characterized in that: The end of the plasma transmission pipeline is trumpet-shaped, and the end with a larger opening of the trumpet is aligned with the first end.

7. The remote plasma source base according to claim 5, characterized in that: The end of the second end is trumpet-shaped, and the end with a smaller opening of the trumpet-shaped is facing outward; the end of the third end is trumpet-shaped, and the end with a smaller opening of the trumpet-shaped is facing outward.

8. The remote plasma source base according to claim 5, characterized in that: The connection between the first end and the second end is a rounded structure, and the connection between the first end and the third end is a rounded structure.

9. The remote plasma source base according to claim 5, characterized in that: While the plasma enters the first end from the upper base and is output from the second end and the third end, the shielding gas is introduced into the lower base from the at least one shielding gas inlet.

10. A semiconductor process equipment, characterized in that: include: Remote plasma generation equipment; A remote plasma source base as claimed in any one of claims 1 to 9, supporting the remote plasma generating device; Dual process chambers; A first gas delivery pipeline, one end of which is connected to the second end of the remote plasma source base, and the other end of which is connected to the dual process chamber; and A second gas delivery pipeline has one end connected to the third end of the remote plasma source base and the other end connected to the dual process chamber.

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