Method for coating film on glass substrate

Abstract

The invention relates to a method for coating a film on a glass substrate, which comprises the following steps of: cleaning the glass substrate, and pretreating the surface of the glass substrate through plasma; an intermediate layer is formed on the surface of a glass substrate through chemical vapor deposition or atomic layer deposition, and then the glass substrate is conveyed to a physical vapor deposition cavity for thin film deposition, so that a titanium metal conductive layer is formed on the surface of the intermediate layer. By means of the film coating method, the adhesive force between the titanium metal conducting layer and the glass substrate can be increased, and the yield and reliability of the follow-up packaging technology can be improved.

Description

Technical Field

[0001] The present invention relates to a method for coating a glass substrate, which can increase the adhesion between a titanium metal conductive layer and the glass substrate, and is beneficial to improving the yield and reliability of subsequent packaging processes. Background Art

[0002] Semiconductor packaging generally refers to setting a tiny and fragile semiconductor die on a packaging substrate and covering the die and the substrate with a packaging case, where the die can be connected to an external circuit through the packaging substrate to perform its functions.

[0003] Specifically, the packaging substrate is mainly used to support and protect the die and prevent the die from being damaged during transportation and use. The conductive layer provided on the packaging substrate can be used to connect the electrodes of the die to an external circuit to achieve electrical signal transmission between the die and the external circuit. In addition, the packaging substrate can also be used to transfer the heat generated during the operation of the die to the outside to prevent the die from overheating.

[0004] Traditionally, organic materials are commonly used to make packaging substrates, which have the advantages of low cost and easy fabrication. Compared with substrates made of organic materials, glass substrates play an increasingly important role in the field of semiconductor packaging due to their excellent properties, such as high heat resistance, high flatness, low thermal expansion coefficient, high transparency, low dielectric constant, and high mechanical strength, and are suitable for the fields of 5G communication, high-performance computing chips, and electric vehicles.

[0005] However, glass substrates also have problems such as high cost, high processing difficulty, and poor adhesion to metals. Taking the deposition of a titanium metal conductive layer on the surface of a glass substrate as an example, the adhesion between the titanium metal conductive layer and the glass substrate is only about 0.05 kgf, which may cause the titanium metal conductive layer to peel off from the surface of the glass substrate, thereby affecting the yield and reliability of subsequent packaging processes. Summary of the Invention

[0006] To solve the problems described in the prior art, the present invention proposes a method for coating a glass substrate, mainly forming an intermediate layer on the surface of the glass substrate, and then forming a titanium metal conductive layer on the intermediate layer. By setting the intermediate layer, the adhesion between the titanium metal conductive layer and the glass substrate can be improved, and it is beneficial to improving the yield and reliability of subsequent packaging processes.

[0007] An object of the present invention is to propose a method for coating a glass substrate. Before mainly forming an intermediate layer and a titanium metal conductive layer on the surface of the glass substrate, the surface of the glass substrate is first pretreated by oxygen plasma to modify the surface of the glass substrate and reduce the dangling bonds on the surface of the glass substrate, so as to facilitate the sequential formation of the intermediate layer and the titanium metal conductive layer on the surface of the glass substrate.

[0008] An object of the present invention is to provide a method for coating a glass substrate. Due to the large surface energy difference between the glass substrate and the titanium metal conductive layer, it is difficult for the titanium metal conductive layer to grow on the surface of the glass substrate, and it may cause uneven thickness of the titanium metal conductive layer grown on the surface of the glass substrate.

[0009] In addition, there is also a significant difference in the coefficient of thermal expansion between the glass substrate and the titanium metal conductive layer. When the environmental temperature changes greatly, it may cause the separation of the titanium metal conductive layer from the glass substrate. Therefore, the present invention further provides an intermediate layer between the glass substrate and the titanium metal conductive layer. By providing the intermediate layer, the problems caused by the excessive differences in surface energy and coefficient of thermal expansion between the glass substrate and the titanium metal conductive layer can be reduced, which is beneficial to growing the titanium metal conductive layer on the glass substrate and improving the adhesion between the titanium metal conductive layer and the glass substrate.

[0010] To achieve the above object, the present invention provides a method for coating a glass substrate, including: cleaning a glass substrate; transporting the glass substrate to a deposition chamber and depositing an intermediate layer on the glass substrate, wherein the deposition chamber is a chemical vapor deposition chamber or an atomic layer deposition chamber, and the intermediate layer includes titanium oxide thin film, titanium nitride thin film, titanium fluoride thin film, titanium chloride thin film, silicon dioxide thin film or silicon nitride thin film; and transporting the glass substrate to a first physical vapor deposition chamber and depositing a titanium metal conductive layer on the surface of the intermediate layer.

[0011] The present invention provides another method for coating a glass substrate, including: cleaning a glass substrate; transporting the glass substrate to a plasma pretreatment chamber and pretreating the glass substrate with oxygen plasma; transporting the glass substrate to a deposition chamber and depositing an intermediate layer on the glass substrate, wherein the deposition chamber is a chemical vapor deposition chamber or an atomic layer deposition chamber, and the intermediate layer includes titanium oxide thin film, titanium nitride thin film, titanium fluoride thin film, titanium chloride thin film, silicon dioxide thin film or silicon nitride thin film; and transporting the glass substrate to a first physical vapor deposition chamber and depositing a titanium metal conductive layer on the surface of the intermediate layer.

[0012] In an embodiment of the method for coating a glass substrate, the method includes the following steps: transporting the glass substrate to a second physical vapor deposition chamber and depositing a copper metal conductive layer on the surface of the titanium metal conductive layer.

[0013] In an embodiment of the method for coating a glass substrate, the glass substrate includes at least one through hole, and the inner surface of the through hole has an intermediate layer, a titanium metal conductive layer and a copper metal conductive layer.

[0014] In one embodiment of the method for coating a glass substrate, a deposition chamber, a first physical vapor deposition chamber, and a second physical vapor deposition chamber are connected to a transfer chamber, and at least one robotic arm in the transfer chamber is used to transfer the glass substrate between the deposition chamber, the first physical vapor deposition chamber, and the second physical vapor deposition chamber.

[0015] In one embodiment of the method for coating a glass substrate, the method includes the following steps: adjusting the air pressure in the transfer chamber through a pressure adjustment unit so that the air pressure in the transfer chamber is close to the air pressure in the deposition chamber, the first physical vapor deposition chamber, or the second physical vapor deposition chamber.

[0016] In one embodiment of the method for coating a glass substrate, a plasma pretreatment chamber, a deposition chamber, a first physical vapor deposition chamber, and a second physical vapor deposition chamber are connected to a transfer chamber, and at least one robotic arm in the transfer chamber is used to transfer the glass substrate between the plasma pretreatment chamber, the deposition chamber, the first physical vapor deposition chamber, and the second physical vapor deposition chamber.

[0017] In one embodiment of the method for coating a glass substrate, the method includes the following steps: adjusting the air pressure in the transfer chamber through a pressure adjustment unit so that the air pressure in the transfer chamber is close to the air pressure in the plasma pretreatment chamber, the deposition chamber, the first physical vapor deposition chamber, or the second physical vapor deposition chamber.

[0018] The method for coating a glass substrate according to the present invention has the following advantages: it can improve the adhesion between the titanium metal conductive layer and the glass substrate, and is beneficial to improving the yield and reliability of subsequent packaging processes. Description of the Drawings

[0019] Figure 1 It is a flowchart of the steps of one embodiment of the method for coating a glass substrate according to the present invention; Figure 2 It is a schematic structural diagram of one embodiment of a glass substrate with a metal thin film according to the present invention; Figure 3 It is a schematic structural diagram of one embodiment of a deposition device for coating a glass substrate according to the present invention; Figure 4 It is a flowchart of the steps of another embodiment of the method for coating a glass substrate according to the present invention.

[0020] Description of the Reference Numerals 21: Glass substrate; 211: Perforation; 23: Intermediate layer; 25: Titanium metal conductive layer; 27: Copper metal conductive layer; 30: Deposition device; 31: Plasma pretreatment chamber; 32: Buffer chamber; 33: Deposition chamber; 34: Pre - cleaning chamber; 35: First physical vapor deposition chamber; 36: Pressure adjustment unit; 361: Vacuum pump; 363: Gas supply unit; 37: Second physical vapor deposition chamber; 39: Transfer chamber; 391: Robot arm. Detailed implementation manner

[0021] Figure 1 This is a step - flow chart of an embodiment of the method for coating a glass substrate in the present invention. Please refer to Figure 2 , clean the glass substrate 21, as shown in step 11.

[0022] In an embodiment of the present invention, the glass substrate 21 may include silicon dioxide, aluminosilicate, alkali - aluminosilicate, borosilicate, alkali - borosilicate, aluminoborosilicate, alkali - aluminoborosilicate, soda - lime, etc. For example, the glass substrate 21 includes 70% or more than 75% of silicon dioxide, and the thickness of the glass substrate 21 may be less than or equal to 3 mm.

[0023] In practical applications, the glass substrate 21 can be first wet - cleaned. For example, the glass substrate 21 is cleaned with acetone to remove grease or other organic contaminants on the surface of the glass substrate, and then the glass substrate 21 is cleaned with methanol to dissolve the remaining acetone on the surface of the glass substrate 21. Finally, the glass substrate 21 is cleaned with deionized water to remove the remaining organic solvents on the surface of the glass substrate 21.

[0024] The above - mentioned method of cleaning the glass substrate 21 and using acetone and methanol to clean the glass substrate 21 are only one embodiment of the present invention and do not limit the scope of the rights of the present invention. In different embodiments, other organic solvents can also be used to clean the glass substrate 21. For example, alkaline cleaning solutions (such as sodium hydroxide or ammonia water solutions), or acidic cleaning solutions (such as a mixture of sulfuric acid and hydrogen peroxide, nitric acid or hydrochloric acid).

[0025] After the wet cleaning of the glass substrate 21 is completed, the glass substrate 21 can be further heated to remove the moisture on the glass substrate 21. In practical applications, before heating the glass substrate 21, most of the moisture on the surface of the glass substrate 21 can be removed by a high-pressure nitrogen gun first.

[0026] In practical applications, it can be carried out through Figure 3 the deposition device 30 shown in Figure 5 to coat the surface of the glass substrate 21. For example, the deposition device 30 may include a plasma pretreatment chamber 31, a buffer chamber (load lock) 32, a deposition chamber 33, a pre-cleaning chamber 34, a first physical vapor deposition chamber 35, a second physical vapor deposition chamber 37, and a transfer chamber 39. The transfer chamber 39 is connected to the plasma pretreatment chamber 31, the buffer chamber 32, the deposition chamber 33, the pre-cleaning chamber 34, the first physical vapor deposition chamber 35, and the second physical vapor deposition chamber 37. At least one robotic arm 391 may be disposed in the transfer chamber 39, and the robotic arm 391 is used to transfer the glass substrate 21 between the plasma pretreatment chamber 31, the buffer chamber 32, the deposition chamber 33, the pre-cleaning chamber 34, the first physical vapor deposition chamber 35, and the second physical vapor deposition chamber 37.

[0027] In an embodiment of the present invention, the glass substrate 21 can be transported from the outside of the deposition device 30 to the buffer chamber 32, and then the glass substrate 21 in the buffer chamber 32 is transferred to the pre-cleaning chamber 34 by the robotic arm 391 in the transfer chamber 39.

[0028] The pre-cleaning chamber 34 can remove the contaminants on the surface of the glass substrate 21 by gas or low-energy argon ions. In addition, a heating device can also be disposed in the pre-cleaning chamber 34 to heat the glass substrate 21 to remove the moisture on the glass substrate 21. In another embodiment of the present invention, the pre-cleaning chamber 34 can be independent of the deposition device 30 and located outside the deposition device 30.

[0029] The glass substrate 21 after pre-cleaning will be transferred to the deposition chamber 33, and an interlayer 23 will be formed on the surface of the glass substrate 21, as shown in Step 13. For example, the glass substrate 21 in the pre-cleaning chamber 34 can be transferred to the deposition chamber 33 by the robotic arm 391 in the transfer chamber 39. The deposition chamber 33 can be a chemical vapor deposition chamber, a plasma-enhanced chemical vapor deposition chamber, or an atomic layer deposition chamber.

[0030] Specifically, when the deposition chamber 33 is a chemical vapor deposition chamber, a gaseous compound containing titanium and a reaction gas can be transported into the deposition chamber 33 during the deposition process. For example, the gaseous compound of titanium can be titanium tetrachloride, and titanium tetrachloride will decompose at high temperature to produce titanium atoms or titanium molecules, and the titanium atoms or titanium molecules will react with the reaction gas to form an intermediate layer 23 on the surface of the glass substrate 21. In different embodiments, a gaseous compound containing silicon and a reaction gas can be transported into the deposition chamber 33. For example, the gaseous compound of silicon can be silicon tetrachloride.

[0031] When the deposition chamber 33 is an atomic layer deposition chamber, a titanium precursor and a reaction gas can be sequentially transported into the atomic layer deposition chamber during the deposition process to form an intermediate layer 23 on the surface of the glass substrate 21. In different embodiments, a precursor gas containing silicon and a reaction gas can be transported into the deposition chamber 33. For example, the precursor gas of silicon can be silicon tetrachloride.

[0032] In an embodiment of the present invention, the above reaction gas can be water vapor, oxygen, nitrogen, fluorine or chlorine, and the intermediate layer 23 formed on the surface of the glass substrate 21 can be a titanium oxide thin film, a titanium nitride thin film, a titanium fluoride thin film, a titanium chloride thin film, a silicon dioxide thin film or a silicon nitride thin film, etc.

[0033] After the setting of the intermediate layer 23 is completed, the glass substrate 21 can be transferred to the first physical vapor deposition chamber 35, and a titanium metal conductive layer 25 can be formed on the surface of the intermediate layer 23 of the glass substrate 21 by physical vapor deposition, as shown in step 15. For example, the glass substrate 21 in the deposition chamber 33 can be transferred to the first physical vapor deposition chamber 35 by the robotic arm 391 in the transfer chamber 39.

[0034] In an embodiment of the present invention, the transfer chamber 39 can be connected to a pressure adjustment unit 36, and the pressure in the transfer chamber 39 can be adjusted by the pressure adjustment unit 36. Specifically, the pressure adjustment unit 36 can include a suction pump 361 and a gas supply unit 363. The suction pump 361 is used to extract the gas in the transfer chamber 39 to reduce the pressure in the transfer chamber 39. The gas supply unit 363 can be used to transport gas into the transfer chamber 39. For example, the gas can be an inert gas to increase the pressure in the transfer chamber 39.

[0035] Generally, the pressure in the deposition chamber 33 is less than the pressures in the first physical vapor deposition chamber 35 and the atomic layer deposition chamber. For example, the pressure in the deposition chamber 33 is usually between 10 -6 to 10 -3 Torr, while the pressures in the first physical vapor deposition chamber 35 and the atomic layer deposition chamber are usually less than 1 Torr.

[0036] Before opening the valve connecting the deposition chamber 33 and the transfer chamber 39, the air pressure adjustment unit 36 can first reduce the air pressure in the transfer chamber 39 so that the air pressures in the deposition chamber 33 and the transfer chamber 39 are similar, and then open the valve connecting the deposition chamber 33. For example, the gas in the transfer chamber 39 is pumped out by the air pump 361 so that the air pressure in the transfer chamber 39 is between 10 -6 and 10 -3 Toor.

[0037] Before opening the connection to the first physical vapor deposition chamber 35 and the second physical vapor deposition chamber 37, the air pressure adjustment unit 36 can first increase the air pressure in the transfer chamber 39 so that the gas pressures in the first physical vapor deposition chamber 35 and the second physical vapor deposition chamber 37 are similar to that in the transfer chamber 39, and then open the valve connecting the first physical vapor deposition chamber 35 or the second physical vapor deposition chamber 37. For example, the gas is supplied to the transfer chamber 39 by the gas supply unit 363 so that the air pressure in the transfer chamber 39 is slightly less than 1 Toor.

[0038] After the titanium metal conductive layer 25 is set, the glass substrate 21 will be transferred to the second physical vapor deposition chamber 37, and a copper metal conductive layer 27 will be formed on the surface of the titanium metal conductive layer 25 of the glass substrate 21 by physical vapor deposition, as shown in step 17. For example, the glass substrate 21 in the first physical vapor deposition chamber 35 can be transferred to the second physical vapor deposition chamber 37 by the robotic arm 391 in the transfer chamber 39.

[0039] In actual application, the glass substrate 21 may include at least one perforation 211, and the intermediate layer 23, the titanium metal conductive layer 25, and the copper metal conductive layer 27 can be provided on the surface of the glass substrate 21 and the inner surface of the perforation 211.

[0040] Figure 4 This is a flowchart of the steps of another embodiment of the method for coating a glass substrate in the present invention. Please refer to Figure 2 , clean the glass substrate 21, as shown in step 41.

[0041] The method of cleaning the glass substrate 21 can be the same as that of Figure 1 step 11, for example, cleaning the glass substrate 21 with acetone to remove the grease or other organic contaminants on the surface of the glass substrate, then cleaning the glass substrate 21 with methanol to dissolve the residual acetone on the surface of the glass substrate 21, and finally cleaning the glass substrate 21 with deionized water to remove the residual organic solvents on the surface of the glass substrate 21.

[0042] In an embodiment of the present invention, as Figure 3As shown, the glass substrate 21 can be transported from the outside of the deposition device 30 to the buffer chamber 32, and then the mechanical arm 391 in the transfer chamber 39 transports the glass substrate 21 in the buffer chamber 32 to the pre-cleaning chamber 34. The pre-cleaning chamber 34 can remove the contamination on the surface of the glass substrate 21 through gas or low-energy argon ions.

[0043] After the pre-cleaning is completed, the glass substrate 21 will be transported to the plasma pre-treatment chamber 31, and the surface of the glass substrate 21 will be pre-treated with oxygen plasma in the plasma pre-treatment chamber 31, as shown in step 43. Specifically, the oxygen plasma can modify the surface of the glass substrate 21 to reduce the contact angle on the surface of the glass substrate 21, so that the surface of the glass substrate 21 changes from hydrophobic to hydrophilic, which is beneficial for depositing the interlayer 23 and the titanium metal conductive layer 25 on the surface of the glass substrate 21 subsequently.

[0044] In addition, the oxygen plasma can also be used to repair the dangling bonds on the surface of the glass substrate 21, which is also beneficial for depositing the interlayer 23 and the titanium metal conductive layer 25 on the surface of the glass substrate 21.

[0045] After the plasma pre-treatment is completed, the glass substrate 21 will be transported to the deposition chamber 33, and the interlayer 23 will be formed on the surface of the glass substrate 21 by chemical vapor deposition, as shown in step 45. For example, the mechanical arm 391 in the transfer chamber 39 can transport the glass substrate 21 in the plasma pre-treatment chamber 31 to the deposition chamber 33.

[0046] After the interlayer 23 is set, the glass substrate 21 will be transported to the first physical vapor deposition chamber 35, and the titanium metal conductive layer 25 will be formed on the surface of the interlayer 23 of the glass substrate 21 by physical vapor deposition, as shown in step 47. For example, the mechanical arm 391 in the transfer chamber 39 can transport the glass substrate 21 in the deposition chamber 33 to the first physical vapor deposition chamber 35.

[0047] After the titanium metal conductive layer 25 is set, the glass substrate 21 will be transported to the second physical vapor deposition chamber 37, and the copper metal conductive layer 27 will be formed on the surface of the titanium metal conductive layer 25 of the glass substrate 21 by physical vapor deposition, as shown in step 49. For example, the mechanical arm 391 in the transfer chamber 39 can transport the glass substrate 21 in the first physical vapor deposition chamber 35 to the second physical vapor deposition chamber 37.

[0048] Through the method of depositing a metal conductive layer on the glass substrate 21 according to the present invention, an intermediate layer 23, a titanium metal conductive layer 25, and a copper metal conductive layer 27 can be sequentially arranged in the same deposition device 30. By providing the intermediate layer 23, the adhesion between the titanium metal conductive layer 25 and the glass substrate 21 can be increased. For example, the adhesion between the titanium metal conductive layer 25 and the glass substrate 21 can be increased from 0.05 kgf described in the prior art to 0.5 kgf, which can significantly reduce the probability of the titanium metal conductive layer 25 peeling off from the glass substrate 21, and can improve the yield and reliability of the subsequent packaging process.

[0049] The above description is only a preferred embodiment of the present invention, and is not used to limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made in accordance with the shape, structure, features, and spirit described in the scope of the patent application of the present invention should be included in the scope of the patent application of the present invention.

Claims

1. A method for coating a glass substrate, characterized in that: include: cleaning a glass substrate; The glass substrate is transferred to a deposition chamber, and an intermediate layer is deposited on the glass substrate, wherein the deposition chamber is a chemical vapor deposition chamber or an atomic layer deposition chamber, and the intermediate layer includes a titanium oxide film, a titanium nitride film, a titanium fluoride film, a titanium chloride film, a silicon dioxide film or a silicon nitride film; and The glass substrate is transferred into a first physical vapor deposition chamber, and a titanium metal conductive layer is deposited on the surface of the intermediate layer.

2. The method for coating a glass substrate according to claim 1, wherein: The method comprises the following steps: transferring the glass substrate into a second physical vapor deposition chamber, and depositing a copper metal conductive layer on the surface of the titanium metal conductive layer.

3. The method for coating a glass substrate as claimed in claim 2, characterized in that: The glass substrate comprises at least one through hole, and the inner surface of the through hole is provided with the intermediate layer, the titanium metal conductive layer and the copper metal conductive layer.

4. The method for coating a glass substrate as claimed in claim 2, wherein: The deposition chamber, the first physical vapor deposition chamber and the second physical vapor deposition chamber are connected to a transfer chamber, and the glass substrate is transferred between the deposition chamber, the first physical vapor deposition chamber and the second physical vapor deposition chamber through at least one robot arm in the transfer chamber.

5. The method for coating a glass substrate as claimed in claim 4, characterized in that: The method comprises the following steps: adjusting the air pressure in the transfer chamber by a pressure adjustment unit so that the air pressure in the transfer chamber is close to the air pressure in the deposition chamber or the first physical vapor deposition chamber or the second physical vapor deposition chamber.

6. A method for coating a glass substrate, characterized in that: include: cleaning a glass substrate; The glass substrate is transported to a plasma pretreatment chamber, and the glass substrate is pretreated by oxygen plasma; The glass substrate is transferred to a deposition chamber, and an intermediate layer is deposited on the glass substrate, wherein the deposition chamber is a chemical vapor deposition chamber or an atomic layer deposition chamber, and the intermediate layer includes a titanium oxide film, a titanium nitride film, a titanium fluoride film, a titanium chloride film, a silicon dioxide film or a silicon nitride film; and The glass substrate is transferred into a first physical vapor deposition chamber, and a titanium metal conductive layer is deposited on the surface of the intermediate layer.

7. The method for coating a glass substrate as claimed in claim 6, wherein: The method comprises the following steps: transferring the glass substrate into a second physical vapor deposition chamber, and depositing a copper metal conductive layer on the surface of the titanium metal conductive layer.

8. The method for coating a glass substrate as claimed in claim 7, wherein: The glass substrate comprises at least one through hole, and the inner surface of the through hole is provided with the intermediate layer, the titanium metal conductive layer and the copper metal conductive layer.

9. The method for coating a glass substrate as claimed in claim 7, wherein: The plasma pretreatment chamber, the deposition chamber, the first physical vapor deposition chamber and the second physical vapor deposition chamber are connected to a transfer chamber, and the glass substrate is transferred between the plasma pretreatment chamber, the deposition chamber, the first physical vapor deposition chamber and the second physical vapor deposition chamber through at least one robot arm in the transfer chamber.

10. The method for coating a glass substrate according to claim 9, wherein: The method comprises the following steps: adjusting the gas pressure in the transfer chamber by a gas pressure adjustment unit so that the gas pressure in the transfer chamber is close to the gas pressure in the plasma pretreatment chamber, the deposition chamber, the first physical vapor deposition chamber or the second physical vapor deposition chamber.

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