Method for realizing automatic mounting of semiconductor laser

Abstract

The invention relates to the technical field of semiconductor laser manufacturing, and provides a method for realizing automatic mounting of a semiconductor laser, which comprises the following steps of: S1, moving a laser shell into a heating stage of a eutectic machine; s2, the TEC and the laser shell are mounted, the eutectic temperature is 280-320 DEG C, and gold-tin solder is selected; s3, the wiring block and the TEC are mounted, the eutectic temperature is 217-240 DEG C, and tin-silver-copper solder is selected; s4, the COC and the wiring block are mounted, the eutectic temperature ranges from 175 DEG C to 210 DEG C, and tin-indium-silver solder is selected; s5, the MPD, the NTC and the PZT are all mounted on the wiring block, the eutectic temperature is 145-170 DEG C, and a tin-bismuth solder is selected; and S6, obtaining a finished product. The method has the beneficial effects that the core idea is that gold tin, tin silver copper, tin indium silver, tin bismuth and other materials are sequentially adopted in the four temperature zones of high temperature, medium high temperature, medium low temperature and low temperature, a reliable mounting sequence is provided, and the performance of the semiconductor laser is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor laser manufacturing, and particularly relates to a method for realizing automatic mounting of semiconductor lasers. Background Art

[0002] In the current big data era, the application scope of semiconductor lasers is getting larger and larger, covering various industries such as face recognition, autonomous driving, and industrial robots; among them, semiconductor lasers play an increasingly important role in the application market. With the continuous progress of semiconductor laser technology, the performance of high-power semiconductor laser chips has been significantly improved, which enhances the efficiency and reliability in various application fields.

[0003] However, although the performance of the semiconductor laser chip itself has been improved, its packaging technology is still one of the key factors restricting its overall performance. The quality and design of the semiconductor laser chip directly affect its output power, high brightness, and the stability of spectral characteristics. The currently common chip packaging technology is solder mounting, and the overall chip device is in a form of glue sealing. Due to the influence of transition materials and effective bonding surfaces, the overall heat transfer efficiency of the semiconductor laser finished product is low, reducing the output power, high brightness, and the stability of spectral characteristics of the semiconductor laser finished product.

[0004] Therefore, it is necessary to improve the chip packaging technology of semiconductor lasers to enhance the performance of semiconductor lasers; there is an urgent need in this technical field for a method for realizing automatic mounting of semiconductor lasers. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a method for automatic mounting of semiconductor lasers.

[0006] The present invention is implemented as follows:

[0007] A method for realizing automatic mounting of semiconductor lasers includes the following steps:

[0008] S1. Move the laser housing into the hot stage of the eutectic machine.

[0009] S2. Move the TEC into the hot stage of the eutectic machine, mount the TEC on the laser housing, the eutectic temperature is 280°C - 320°C, and gold-tin solder is selected.

[0010] S3. Move the wiring block into the hot stage of the eutectic machine, mount the wiring block on the TEC, the eutectic temperature is 217 - 240°C, and tin-silver-copper solder is selected.

[0011] S4. Transfer the COC to the hot stage of the eutectic machine. The COC is mounted on the wire routing block. The eutectic temperature is 175 - 210 °C, and indium-tin-silver solder is selected.

[0012] S5. Transfer the MPD, NTC, and PZT to the hot stage of the eutectic machine. The MPD, NTC, and PZT are all mounted on the wire routing block. The eutectic temperature is 145 - 170 °C, and tin-bismuth solder is selected.

[0013] S6. Obtain the finished product.

[0014] Furthermore, the composition of the gold-tin solder is Au70Sn30; the composition of the tin-silver-copper solder is Sn77Ag22.5Cu0.5; the composition of the indium-tin-silver solder is Sn77.2In20Ag2.8; the composition of the tin-bismuth solder is Sn48Bi52.

[0015] Furthermore, the laser housing, TEC, wire routing block, and COC are all transferred in position using the first nozzle, and the MPD, NTC, and PZT are all transferred in position using the second nozzle. The first nozzle is larger than the second nozzle.

[0016] A method for realizing automatic mounting of semiconductor lasers includes the following steps:

[0017] S1. Transfer the wire routing block, COC, TEC, and laser housing to the hot stage of the eutectic machine.

[0018] S2. The COC is mounted on the wire routing block, and the TEC is mounted on the laser housing. The eutectic temperature is 280 - 320 °C for both, and gold-tin solder is selected.

[0019] S3. Transfer the wire routing block to the inside of the laser housing. The wire routing block is mounted on the TEC. The eutectic temperature is 217 - 240 °C, and tin-silver-copper solder is selected.

[0020] S4. Transfer the MPD, NTC, and PZT to the hot stage of the eutectic machine. The MPD, NTC, and PZT are all mounted on the wire routing block. The eutectic temperature is 175 - 210 °C for both, and indium-tin-silver solder is selected.

[0021] S5. Obtain the finished product.

[0022] Furthermore, the composition of the gold-tin solder is Au70Sn30; the composition of the tin-silver-copper solder is Sn77Ag22.5Cu0.5; the composition of the indium-tin-silver solder is Sn77.2In20Ag2.8.

[0023] Compared with the background technology, the beneficial effects of the technical solution of the present invention are as follows:

[0024] Components of semiconductor lasers are mounted using an eutectic machine. By reasonably selecting solders and dividing the eutectic temperature range, the core idea is to use materials such as gold-tin, tin-silver-copper, tin-indium-silver, and tin-bismuth in four temperature zones: high temperature, medium-high temperature, medium-low temperature, and low temperature, respectively, to provide a reliable mounting sequence. The overall heat transfer efficiency of the semiconductor laser finished product is high, improving the output power, high brightness, and spectral characteristic stability of the semiconductor laser finished product; improving the chip packaging technology of the semiconductor laser and enhancing the performance of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The present invention will be further described below with reference to the accompanying drawings in conjunction with embodiments.

[0026] Figure 1 It is a schematic flowchart of the method of the first embodiment of the present invention.

[0027] Figure 2 It is a schematic structural diagram of the finished product of the semiconductor laser in the present invention.

[0028] Figure 3 It is a schematic flowchart of the method of the second embodiment of the present invention.

[0029] Reference numerals: laser housing 1; TEC 2; wire routing block 3; COC 4; MPD 5; NTC 6; PZT 7. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0030] The embodiments of the present invention provide a method for realizing automatic mounting of semiconductor lasers, overcoming the disadvantages in the background technology that the chip packaging technology uses solder mounting and the overall chip device uses glue sealing; achieving the technical effect of high overall heat transfer efficiency of the semiconductor laser finished product, improving the output power, high brightness, and spectral characteristic stability of the semiconductor laser finished product.

[0031] The general idea of the technical solution of the embodiments of the present invention is as follows:

[0032] Considering both device mounting man-hours and high heat conduction efficiency, two technical solutions are set:

[0033] The first technical solution mainly differentiates materials according to the equipment nozzle. The operating equipment according to the first technical solution only needs to switch the nozzle once, and the equipment operating efficiency can be maximized; the laser housing, TEC, wire routing block, COC, and MPD, NTC, PZT are sequentially moved into the hot stage of the eutectic for mounting; the laser housing, TEC, wire routing block, and COC have a large area and use the first nozzle; MPD, NTC, and PZT use the second nozzle; the eutectic temperature of the previous mounting process is higher than that of the subsequent mounting process, ensuring that the devices in the subsequent mounting process will not affect the devices in the previous process, and the reliability of mounting is high.

[0034] For the second technical solution, mainly considering device heat dissipation, between the COC as a heat source device and the wiring block, and between the hot surface of the TEC and the laser housing, first use the gold-tin solder with the highest thermal conductivity for mounting, and then mount the components step by step in the order of gradually decreasing thermal conductivity. Similarly, the eutectic temperature of the previous mounting process is higher than that of the subsequent mounting process to ensure that the devices in the subsequent mounting process will not affect the devices in the previous process, and the reliability of mounting is high.

[0035] To better understand the above technical solutions, the above technical solutions will be described in detail below in conjunction with the accompanying drawings of the specification and specific implementation manners.

[0036] Refer to Figures 1 to 2 , the first embodiment of the present invention.

[0037] A method for realizing automatic mounting of a semiconductor laser includes the following steps:

[0038] S1. Move the laser housing 1 into the hot stage of the eutectic machine;

[0039] S2. Move the TEC 2 into the hot stage of the eutectic machine, mount the TEC 2 on the laser housing 1, the eutectic temperature is 280°C - 320°C, select gold-tin solder, and the composition of the gold-tin solder is Au70Sn30; mounting temperature zone: high temperature;

[0040] S3. Move the wiring block 3 into the hot stage of the eutectic machine, mount the wiring block 3 on the TEC 2, the eutectic temperature is 217 - 240°C, select tin-silver-copper solder, and the composition of the tin-silver-copper solder is Sn77Ag22.5Cu0.5; mounting temperature zone: medium-high temperature;

[0041] S4. Move the COC 4 into the hot stage of the eutectic machine, mount the COC 4 on the wiring block 3, the eutectic temperature is 175 - 210°C, select tin-indium-silver solder, and the composition of the tin-indium-silver solder is Sn77.2In20Ag2.8; mounting temperature zone: medium-low temperature;

[0042] S5. Move the MPD 5, NTC 6, and PZT 7 into the hot stage of the eutectic machine, mount the MPD 5, NTC 6, and PZ7T on the wiring block 3, the eutectic temperature is 145 - 170°C, select tin-bismuth solder, and the composition of the tin-bismuth solder is Sn48Bi52; mounting temperature zone: low temperature;

[0043] S6. Obtain the finished product.

[0044] Components of semiconductor lasers are mounted using an eutectic machine. Through reasonable selection of solder and division of the eutectic temperature range, the core idea is to use materials such as gold-tin, tin-silver-copper, tin-indium-silver, and tin-bismuth in four temperature zones: high temperature, medium-high temperature, medium-low temperature, and low temperature, to provide a reliable mounting sequence. The overall heat transfer efficiency of the finished semiconductor laser is high, improving the output power, high brightness, and spectral characteristic stability of the finished semiconductor laser; improving the chip packaging technology of the semiconductor laser to enhance its performance.

[0045] TEC is a thermoelectric cooler. COC is the chip on the heat sink. MPD is a photodiode. NTC is a thermistor. PZT is a piezoelectric ceramic.

[0046] The laser housing, TEC, wire routing block, and COC are all transferred in position using the first nozzle, and the MPD, NTC, and PZT are all transferred in position using the second nozzle. The first nozzle is larger than the second nozzle.

[0047] The laser housing, TEC, wire routing block, and COC have a large area and use the first nozzle; the MPD, NTC, and PZT use the second nozzle.

[0048] In the first embodiment of the present invention, materials are mainly distinguished by the nozzles of the equipment. The eutectic machine uses the first nozzle to transfer materials at S1, S2, S3, and S4, and uses the second nozzle to transfer materials at S5. Therefore, the eutectic machine only needs to switch the nozzle once, and the operating efficiency of the equipment can be maximized.

[0049] The main function of the nozzle is to be used inside the eutectic machine. The eutectic machine sucks and places materials through the nozzle.

[0050] The function of the hot stage is to heat up and melt the solder, and then cool down and solidify the solder. For example, place the TEC inside the laser housing, place the laser housing on the hot stage of the eutectic machine, fill the inside of the eutectic machine with a protective gas, raise and lower the hot stage to melt the gold-tin solder, and then cool down the hot stage, and the gold-tin solder will fix the TEC and the housing.

[0051] The composition of the gold-tin solder is Au70Sn30; that is, the mass ratio of gold (Au) to tin (Sn) is 70:30.

[0052] The composition of the tin-silver-copper solder is Sn77Ag22.5Cu0.5; that is, the mass ratio of tin (Sn), silver (Ag), and copper (Cu) is 77:22.5:0.5.

[0053] The composition of the tin-indium-silver solder is Sn77.2In20Ag2.8; that is, the mass ratio of tin (Sn), indium (In), and silver (Ag) is 77.2:20:2.8.

[0054] The composition of the tin-bismuth solder is Sn48Bi52; that is, the mass ratio of tin (Sn) to bismuth (Bi) is 48:52.

[0055] There are differences in the thermal conductivity, melting point, and eutectic temperature of different solders. High-temperature solders cannot be used for chip mounting after low-temperature solders, and high-temperature and low-temperature solders cannot be used for chip mounting simultaneously. In the first embodiment of the invention, different solders and different eutectic temperatures are used in the chip mounting process of each step. The eutectic temperature of the previous chip mounting process of the present invention is higher than that of the subsequent chip mounting process, ensuring that the devices in the subsequent chip mounting process will not affect the devices in the previous process, and the reliability of chip mounting is high.

[0056] Refer to Figure 2 and Figure 3 , the second embodiment of the present invention.

[0057] A method for realizing automatic chip mounting of semiconductor lasers includes the following steps:

[0058] S1. Move the wire routing block 3, COC 4, TEC 2, and the laser housing 1 into the hot stage of the eutectic machine.

[0059] S2. Mount the COC 4 to the wire routing block 3, and mount the TEC 2 to the laser housing 1, both with an eutectic temperature of 280 - 320 °C. Select a gold-tin solder, and the composition of the gold-tin solder is Au70Sn30; chip mounting temperature zone: high temperature.

[0060] S3. Transfer the wire routing block 3 to the inside of the laser housing 1, and mount the wire routing block 3 to the TEC 2, with an eutectic temperature of 217 - 240 °C. Select a tin-silver-copper solder, and the composition of the tin-silver-copper solder is Sn77Ag22.5Cu0.5; chip mounting temperature zone: medium-high temperature.

[0061] S4. Move the MPD 5, NTC 6, and PZT 7 into the hot stage of the eutectic machine, and mount the MPD 5, NTC 6, and PZT 7 to the wire routing block 3, all with an eutectic temperature of 175 - 210 °C. Select a tin-indium-silver solder, and the composition of the tin-indium-silver solder is Sn77.2In20Ag2.8; chip mounting temperature zone: medium-low temperature.

[0062] S5. Obtain the finished product.

[0063] The beneficial effects of the technical solution of the present invention are as follows: When using a eutectic machine to mount the components of a semiconductor laser, by reasonably selecting the solder and dividing the eutectic temperature range, a reliable mounting sequence is provided. The overall heat transfer efficiency of the semiconductor laser finished product is high, which improves the output power, high brightness, and spectral characteristic stability of the semiconductor laser finished product; the chip packaging technology of the semiconductor laser is improved to enhance the performance of the semiconductor laser.

[0064] In the second embodiment of the present invention, mainly considering device heat dissipation, between the COC as a heat source device and the wiring block, and between the hot surface of the TEC and the laser housing, first use the gold-tin solder with the highest thermal conductivity for mounting, and then mount the components step by step in the order of gradually decreasing thermal conductivity; similarly, the eutectic temperature of the previous mounting process is higher than that of the subsequent mounting process to ensure that the devices in the subsequent mounting process will not affect the devices in the previous process, and the reliability of the mounting is high.

[0065] TEC is a semiconductor cooler. Its upper surface is the cold surface with the main function of cooling, and its lower surface is the hot surface mainly used for heat dissipation. Different components paired with different solders show different thermal conductivities, and the heat conduction sequence is chip - COC - wiring block - TEC - housing.

[0066] Although the specific embodiments of the present invention have been described above, those skilled in the art of this technology should understand that the specific embodiments we described are illustrative rather than used to limit the scope of the present invention. Equivalent modifications and changes made by those skilled in the art in accordance with the spirit of the present invention should be covered by the scope protected by the claims of the present invention.

Claims

1. A method for realizing automatic placement of semiconductor lasers, characterized in that: The following steps are involved: S1. Move the laser housing into the hot stage of the eutectic machine; S2, moving the TEC into the hot stage of the eutectic machine, mounting the TEC on the laser housing, the eutectic temperature is 280°C-320°C, and gold-tin solder is selected; S3, moving the wiring block into the hot stage of the eutectic machine, mounting the wiring block and the TEC, the eutectic temperature is 217-240° C., and tin-silver-copper solder is selected; S4, moving the COC into the hot stage of the eutectic machine, mounting the COC and the wiring block, the eutectic temperature is 175-210° C., and tin-indium-silver solder is selected; S5, moving the MPD, NTC, and PZT into the hot stage of the eutectic machine, mounting the MPD, NTC, and PZT on the wiring block, the eutectic temperature is 145-170° C., and tin-bismuth solder is selected; S6. Obtain the finished product.

2. A method for realizing automatic placement of semiconductor lasers according to claim 1, characterized in that: The composition of the gold-tin solder is Au70Sn30; the composition of the tin-silver-copper solder is Sn77Ag22.5Cu0.5; the composition of the tin-indium-silver solder is Sn77.2In20Ag2.8; and the composition of the tin-bismuth solder is Sn48Bi52.

3. A method for realizing automatic placement of semiconductor lasers according to claim 1, characterized in that: The laser housing, TEC, wiring block, and COC are all transferred using a first suction nozzle, and the MPD, NTC, and PZT are all transferred using a second suction nozzle, and the first suction nozzle is larger than the second suction nozzle.

4. A method for realizing automatic placement of semiconductor lasers, characterized in that: The following steps are involved: S1. Move the wiring block, COC, TEC and laser housing into the hot stage of the eutectic machine; S2, the COC is mounted on the wiring block, and the TEC is mounted on the laser housing, both at a eutectic temperature of 280-320°C, using gold-tin solder; S3, transferring the wiring block to the inside of the laser housing, mounting the wiring block and the TEC, the eutectic temperature is 217-240° C., and using tin-silver-copper solder; S4, moving the MPD, NTC, and PZT into the hot stage of the eutectic machine, mounting the MPD, NTC, and PZT on the wiring block, all with a eutectic temperature of 175-210° C., and using tin-indium-silver solder; S5. Obtain the finished product.

5. The method for realizing automatic placement of semiconductor lasers according to claim 1, characterized in that: The composition of the gold-tin solder is Au70Sn30; the composition of the tin-silver-copper solder is Sn77Ag22.5Cu0.5; and the composition of the tin-indium-silver solder is Sn77.2In20Ag2.8.

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