Multi-wavelength laser structure

Abstract

The invention relates to the technical field of lasers, in particular to a multi-wavelength laser structure which comprises a heat sink capable of rotating along a rotating shaft, and the rotating shaft is perpendicular to the top face of the heat sink. The wavelengths corresponding to the gain chips in the plurality of gain chips are different, and the plurality of gain chips are annularly arranged on the top surface of the heat sink around the rotating shaft; the output coupling mirror is positioned on one side, far away from the heat sink, of the plurality of gain chips, and the output coupling mirror is matched with the gain chip opposite to the output coupling mirror to form a laser resonant cavity so as to realize laser output; wherein the heat sink rotates along the rotating shaft to switch the gain chips right opposite to the output coupling mirror, when different gain chips are matched with the output coupling mirror, the wavelengths of the lasers output by the multi-wavelength laser structure are different, and the multi-wavelength laser structure at least facilitates the switching of the wavelengths of the output lasers and the simultaneous output of the lasers of multiple wavelengths by adopting a single laser.

Description

Technical Field

[0001] The invention belongs to the technical field of lasers, and in particular relates to a multi-wavelength laser structure. Background Art

[0002] Vertical external cavity surface emitting semiconductor lasers inject carriers into the quantum well of the gain chip by electrical injection or optical injection, obtain periodic gain in the resonant cavity, and realize laser output after reaching the threshold. However, due to the material system of the gain chip, the wavelength coverage range of a single gain chip of the vertical external cavity surface emitting semiconductor laser is only 5nm~10nm. Even the dual-wavelength vertical external cavity surface emitting semiconductor laser can only achieve a wavelength coverage range of about 10nm~50nm. At present, microwave photonics, laser medical treatment, industrial processing and other fields have an urgent need for small-volume, high-performance, multi-wavelength switchable lasers. Traditional lasers alone cannot meet the application requirements. Therefore, how to ensure that the laser has a small volume while achieving high performance and multi-wavelength switchable output has become a problem that needs to be solved urgently. Summary of the invention

[0003] In view of this, the present invention aims to provide a multi-wavelength laser structure, which is at least conducive to using a single laser to achieve switching of output laser wavelengths and simultaneous output of lasers of multiple wavelengths.

[0004] To achieve the above object, the technical solution created by the present invention is implemented as follows: The invention provides a multi-wavelength laser structure, comprising: a heat sink, which is rotatable along a rotation axis, and the rotation axis is perpendicular to the top surface of the heat sink; a plurality of gain chips, each of which corresponds to a different wavelength, and the plurality of gain chips are arranged in a ring around the rotation axis on the top surface of the heat sink; at least one output coupling mirror, which is located on a side of the plurality of gain chips away from the heat sink, and the output coupling mirror cooperates with the gain chip facing the heat sink to form a laser resonant cavity to achieve laser output; wherein the heat sink rotates along the rotation axis to switch the gain chip facing the output coupling mirror, and when different gain chips cooperate with the output coupling mirror, the wavelength of the laser output by the multi-wavelength laser structure is different.

[0005] Furthermore, the pumping mode of the gain chip is electric pumping or optical pumping; the types of the multiple gain chips are the same, and the gain chips are solid gain medium chips, semiconductor gain medium chips or perovskite gain medium chips; or, the types of at least two gain chips among the multiple gain chips are different, and the multiple gain chips include: at least two of: solid gain medium chips, semiconductor gain medium chips and perovskite gain medium chips.

[0006] Furthermore, the number of gain chips is in the range of 6 to 10, and the number of output coupling mirrors is in the range of 1 to 4.

[0007] Further, the top surface of the heat sink has a plurality of grooves, and the gain chips are arranged in the corresponding grooves.

[0008] Further, the gain chips are welded in the corresponding grooves, and the gap between the gain chips and the grooves is filled with a high thermal conductivity material.

[0009] Further, the multi-wavelength laser structure further includes a rotating base, the rotating base is arranged on the bottom surface of the heat sink, and the rotating base drives the heat sink to rotate along the rotation axis.

[0010] Further, the multi-wavelength laser structure includes a plurality of output coupling mirrors. When the heat sink rotates to a preset position, different output coupling mirrors are aligned with different gain chips to form a resonant cavity.

[0011] Further, for the gain chips facing the output coupling mirrors, at least one of the gain chips is selected to be pumped to achieve laser output.

[0012] Further, the types of the plurality of output coupling mirrors are the same, or at least two of the plurality of output coupling mirrors have different types.

[0013] Further, along the direction perpendicular to the rotation axis, the cross-sectional shape of the heat sink is circular, and the rotation axis coincides with the central axis of the heat sink.

[0014] Compared with the prior art, the present invention can achieve the following beneficial effects: The multi-wavelength laser structure provided by the present invention realizes the switching of the output laser wavelength by switching the gain chips facing the output coupling mirrors, so that the multi-wavelength laser structure has a wide wavelength coverage range. And a plurality of gain chips are integrated on the same heat sink, and the switching of the gain chips is realized by the rotation of the heat sink, which is beneficial to ensuring that the multi-wavelength laser structure has a small volume. And the gain chips are embedded and packaged in the grooves of the heat sink, and the high thermal conductivity material is used to fill the vacancies in the grooves, so that the heat of the gain chips can be conducted out more quickly; The rotating base is used to drive the heat sink to rotate to switch the gain chips of different wavelengths and the output coupling mirrors to form a laser resonant cavity, which can not only achieve stable laser output, but also ensure that the structural layout of the multi-wavelength laser structure is relatively compact, which is beneficial to the miniaturization and integration of the multi-wavelength laser structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings: Figure 1 It is a schematic structural diagram of a multi-wavelength laser structure according to an embodiment of the present invention; Figure 2 A top view of another multi-wavelength laser structure according to an embodiment of the present invention; Figure 3 A schematic diagram of another multi-wavelength laser structure for realizing multi-wavelength switching according to an embodiment of the present invention. DETAILED DESCRIPTION

[0016] In order to make the purpose, technical solution and advantages of the invention more clear, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the invention and do not constitute a limitation of the invention.

[0017] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0018] In the description of the invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the invention, unless otherwise specified, the meaning of "multiple" is two or more.

[0019] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0020] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0021] refer to Figures 1 to 3The invention provides a multi-wavelength laser structure, including: a heat sink 202, the heat sink 202 is rotatable along a rotation axis A, and the rotation axis A is perpendicular to the top surface of the heat sink 202; a plurality of gain chips 201, each gain chip 201 in the plurality of gain chips 201 corresponds to a different wavelength, and the plurality of gain chips 201 are arranged in a ring around the rotation axis A on the top surface of the heat sink 202; at least one output coupling mirror 204, the output coupling mirror 204 is located on a side of the plurality of gain chips 201 away from the heat sink 202, the output coupling mirror 204 cooperates with the gain chip 201 facing it to form a laser resonant cavity to achieve laser output, and the gain chip 201 facing it has a corresponding laser output area 205; wherein the heat sink 202 rotates along the rotation axis A to switch the gain chip 201 facing it, and when different gain chips 201 cooperate with the output coupling mirror 204, the wavelength of the laser output by the multi-wavelength laser structure is different.

[0022] The heat sink 202 rotates to switch the gain chips 201 of different wavelengths, which is beneficial to realize the switching of the gain chips 201 while ensuring that the occupied space of the multiple gain chips 201 is small.

[0023] In the present invention, the wavelengths corresponding to each gain chip 201 are different specifically means that the wavelength coverage ranges of each gain chip 201 are different, and the wavelength coverage ranges of each gain chip 201 do not overlap with each other.

[0024] In some embodiments, the pumping mode of the gain chip 201 is electric pumping or optical pumping. It should be noted that only the gain chip matched with the output coupling mirror is pumped. In some examples, the gain chip 201 and the output coupling mirror 204 constitute a vertical external cavity surface emitting semiconductor laser, and the gain chip 201 is a semiconductor gain medium chip. The gain medium chip can be an optical pumping structure or an electric pumping structure. When the gain medium chip is an optical pumping structure, the epitaxial structure of the gain chip 201 does not need to be doped, and the gain chip 201 can be pumped by a lateral pumping light source; when the gain medium chip is an electric pumping structure, the epitaxial structure of the gain chip 201 needs to be doped, and the gain chip 201 has an electrode on the side facing the heat sink 202, and the gain chip 201 also has an electrode on the side away from the heat sink 202, and the electrode is used to realize carrier injection into the gain chip.

[0025] In some embodiments, the gain chip 201 and the output coupling mirror 204 form a vertical external cavity surface emitting semiconductor laser. The gain chip 201 is a semiconductor gain medium chip. Different gain chips 201 among multiple gain chips 201 can select the same semiconductor material with different component gain materials as the gain medium, or different gain chips 201 among multiple gain chips 201 can select different semiconductor materials as the gain medium to ensure that the wavelengths corresponding to each gain chip 201 are different and to ensure that the multi-wavelength laser structure has a wide wavelength coverage range.

[0026] Since the vertical external cavity surface emitting semiconductor laser has advantages such as small volume and good beam quality, therefore, the gain chip 201 is a semiconductor gain medium chip. Combining the semiconductor gain medium chip with the output coupling mirror 204 to form a vertical external cavity surface emitting semiconductor laser can reduce the volume of the multi-wavelength laser structure and improve the quality of the laser output by the multi-wavelength laser structure. For the semiconductor gain medium chip, it is possible to ensure that multiple semiconductor gain medium chips can cover a wide emission spectrum through semiconductor energy band design, and frequency conversion, linewidth compression and other output performance regulations can be achieved by inserting optical elements in the external resonant cavity. The semiconductor gain medium chip can select the corresponding material system according to the application requirements of the emission band. For example, if the required wavelength is in the 600nm - 1200nm band, a semiconductor gain medium chip of the gallium arsenide material system is selected; if the required wavelength is in the 1300nm - 1700nm band, a semiconductor gain medium chip of the indium phosphide material system is selected.

[0027] In some examples, the semiconductor gain medium chip based on the gallium arsenide material system includes: a substrate, which can be a GaAs material; a DBR structure, which can be composed of periodically alternating GaAs layers and AlAs layers, or the DBR structure can be composed of periodically alternating Al x GaAs layers and Al y GaAs layers, where 0 < x < 1, 0 < y < 1. In the DBR structure, the thickness of a single layer of material is 1 / 4 of the output wavelength, and the DBR structure can be undoped; an active region, which can include a quantum well layer and barrier layers located on both sides of the quantum well layer. The material of the barrier layer can be AlGaAs, where the component of Al can be in the range of 0 - 0.2, the material of the quantum well layer can be InGaAs, where the In component can be in the range of 0 - 0.5, the thickness of the barrier layer can be in the range of 20nm - 200nm, the thickness of the quantum well layer can be in the range of 1nm - 20nm, and the emission band of the semiconductor gain medium chip can be in the range of 800nm - 1300nm; a window layer, the material of the window layer can be Al zGaAs material, where 0 < z < 1, and the thickness of the window layer can be in the range of 10 nm to 800 nm.

[0028] In some embodiments, the multi-wavelength laser structure includes eight semiconductor gain medium chips, and the material of the quantum wells of each semiconductor gain medium chip is In X1 Ga 1-X1 As. However, for different semiconductor gain medium chips, X1 in In X1 Ga 1-X1 As is different, that is, the composition of In is different. Specifically, X1 can be in the range of 0 to 0.5, and X1 of the eight semiconductor gain medium chips can increase sequentially according to the arrangement of the eight semiconductor gain medium chips. At this time, the wavelength coverage range of the multi-wavelength laser structure can be 900 nm to 1200 nm.

[0029] In some embodiments, the types of the multiple gain chips 201 are the same, and the gain chip 201 is a solid gain medium chip, a semiconductor gain medium chip, or a perovskite gain medium chip.

[0030] In some embodiments, at least two of the multiple gain chips 201 have different types, and the multiple gain chips 201 include at least two of a solid gain medium chip, a semiconductor gain medium chip, and a perovskite gain medium chip.

[0031] In some embodiments, the multiple gain chips 201 include three types of gain chips 201, namely a solid gain medium chip, a semiconductor gain medium chip, and a perovskite gain medium chip, and the number of each type of gain chip 201 can be one or multiple. The reason for such a setting is that each type of gain chip 201 has a different wavelength coverage range and corresponding characteristics. When using one type of gain chip 201 cannot meet a larger wavelength coverage range or sufficient output power, other types of gain chips 201 can be added to increase the wavelength coverage range and ensure that the power of the output laser meets the requirements.

[0032] It should be noted that the wavelength range corresponding to the semiconductor gain medium is 370nm~1650nm, and the wavelength range corresponding to the solid gain medium is 400nm~3000nm. It can be seen that although the wavelength coverage corresponding to the semiconductor gain medium is wider, some bands may not be able to achieve high gain, that is, high output power cannot be achieved, but the solid gain medium may have a higher output power in this band. Therefore, in some examples, the multi-wavelength laser structure can select two types of gain chips 201, namely, semiconductor gain medium chips and solid gain medium chips. The wavelength range corresponding to the calcium quartz gain medium is 400nm~800nm, which can also be extended to the near-infrared band, and the gain is higher, but its stability is relatively low. Therefore, different types of gain chips 201 have their own characteristics. When actually selecting the type of gain chip 201, the appropriate type of gain chip 201 can be selected according to the wavelength requirements and the actual use scenario. In this way, not only a larger wavelength coverage range can be achieved, but also the performance of the multi-wavelength laser structure can be guaranteed to meet the application requirements.

[0033] In some embodiments, the number of gain chips 201 is in the range of 6-10, and the number of output coupling mirrors 204 is in the range of 1-4.

[0034] In some embodiments, the top surface of the heat sink 202 has a plurality of grooves, and the gain chip 201 is disposed in the corresponding grooves, and the size of the grooves is similar to that of the gain chip 201 .

[0035] In some embodiments, the gain chip 201 is welded in the corresponding groove, and the gap between the gain chip 201 and the groove is filled with a high thermal conductivity material. In some examples, the high thermal conductivity material can be silver formed by filling silver paste, and in other examples, the high thermal conductivity material can also be silicon formed by filling silicone grease.

[0036] In some embodiments, the material of the heat sink 202 is high-purity copper, which is a high thermal conductivity metal material and is conducive to heat dissipation of the gain chip 201. In some examples, the surface of the heat sink 202, which is mainly made of high-purity copper, is evaporated with a metal layer composed of titanium, platinum and gold, so that it is easy to weld it with the gain chip 201.

[0037] In some embodiments, the multi-wavelength laser structure further includes a rotating base 203 . The rotating base 203 is disposed on the bottom surface of the heat sink 202 . The rotating base 203 drives the heat sink 202 to rotate along the rotation axis A.

[0038] In some embodiments, the multi-wavelength laser structure further includes a support structure, and the support structure is used to fix the output coupling mirror on a side of the plurality of gain chips 201 away from the heat sink 202 .

[0039] In some embodiments, the multi-wavelength laser structure includes a plurality of output coupling mirrors 204. When the heat sink 202 is rotated to a preset position, different output coupling mirrors 204 are matched with different gain chips 201 to form a resonant cavity, thereby realizing the switching of the output wavelength. Increasing the number of output coupling mirrors 204 can realize the simultaneous output of multiple wavelengths, and the arrangement order of the gain chips 201 can be set according to the required output wavelength. By rotating the heat sink 202, the simultaneous output of multiple wavelengths and the switching of the output wavelength can be realized. For details, refer to Figure 3 , Figure 3 In the figure, two output coupling mirrors 204 are provided as an example. Figure 3 (a) shows the correspondence between the two output coupling mirrors 204 and the gain chip 201 before rotation. Figure 3 (b) shows the correspondence between the two output coupling mirrors 204 and the gain chip 201 after the heat sink 202 rotates counterclockwise. Figure 3 λ1 to λ8 in the figure are wavelength coverage ranges corresponding to the eight gain chips 201, and λ1 to λ8 are all different. Before the heat sink 202 rotates, if the two gain chips 201 facing the output coupling mirror 204 are pumped, the multi-wavelength laser structure can output lasers with two wavelengths of λ4 and λ8. After the heat sink 202 rotates counterclockwise, Figure 3 In (b), if the two gain chips 201 facing the output coupling mirror 204 are both pumped, the multi-wavelength laser structure can output lasers with two wavelengths of λ3 and λ7. That is, the switching of multi-wavelength output can be achieved by rotating the heat sink 202.

[0040] In some embodiments, for the gain chips 201 facing the output coupling mirror 204, at least one of the gain chips 201 is selectively pumped to achieve laser output. In other words, when the multi-wavelength laser structure includes multiple output coupling mirrors 204, one gain chip 201 among the multiple gain chips 201 facing the output coupling mirror 204 can also be selectively pumped to achieve output of laser of one wavelength.

[0041] In some embodiments, the multiple output coupling mirrors 204 are of the same type, or at least two of the multiple output coupling mirrors 204 are of different types.

[0042] In some embodiments, the output coupling mirror 204 needs to be coated with a reflective film that covers the output wavelength range, has a wide spectrum and high reflectivity. The type and parameters of the output coupling mirror 204 can be selected based on the spot size, output power and other performance requirements of the multi-wavelength laser structure.

[0043] In some embodiments, the types of output coupling mirror 204 that can be selected include: plane mirror, plano-concave mirror, plano-convex mirror and aspheric mirror, etc. In some examples, when the multi-wavelength laser structure needs to output a laser with a large spot and high power, the output coupling mirror 204 can select a plano-concave mirror with a large curvature radius and a slightly lower reflectivity; in some examples, the multi-wavelength laser structure needs to output a laser with a small spot and high beam quality, and the output coupling mirror 204 can select a plano-concave mirror with a small curvature radius and a higher reflectivity; in some examples, the multi-wavelength laser structure needs to output a laser with a small spot and single-mode, and the output coupling mirror 204 can select a plane mirror with a high reflectivity.

[0044] In some embodiments, the output coupling mirror 204 is a plano-concave mirror, the radius of curvature of the plano-concave mirror may be in the range of 10 nm to 500 mm, and the plano-concave mirror may be coated with a high reflective film having a high reflectivity in the wavelength range of 400 nm to 1500 nm.

[0045] In some embodiments, the cross-sectional shape of the heat sink 202 is circular along the direction perpendicular to the rotation axis A, and the rotation axis A coincides with the central axis of the heat sink 202. In other words, the heat sink 202 is a thin cylindrical shape, and more gain chips 201 can be arranged on the top surface of the circular heat sink 202 under the same area, which is more conducive to the miniaturization and integration of the multi-wavelength laser structure.

[0046] In some embodiments, the heat sink 202 is a thin cylindrical shape, the thickness of the heat sink 202 can be in the range of 3mm to 30mm, and the outer diameter of the heat sink 202 can be in the range of 50mm to 500mm. In some examples, the rotating base 203 penetrates the heat sink 202 along the thickness direction of the heat sink 202, and a plurality of gain chips 201 are arranged around the rotating base 203. In this case, the heat sink 202 is annular, the outer diameter of the heat sink 202 can be in the range of 50mm to 500mm, and the inner diameter of the heat sink 202 can be in the range of 20mm to 300mm.

[0047] In some embodiments, the number of grooves may be 8; in some embodiments, the grooves on the top surface of the heat sink 202 may be square grooves, the side length of the square grooves may be in the range of 1 mm to 10 mm, and the depth of the square grooves may be in the range of 1 mm to 10 mm.

[0048] In the multi-wavelength laser structure provided in the above embodiment, the output coupling mirror 204 can correspond to the gain chips 201 of different wavelengths, thereby realizing the switchable output laser wavelength, and the ring-shaped embedded heat sink 202 combined with the rotating base 203 is used to realize the switching of the gain chip 201, and multiple gain chips 201 with different material components are selected, or multiple gain chips 201 with different gain media are selected to ensure that the multi-wavelength laser structure has a wider output wavelength coverage range, and multiple gain chips 201 are arranged on the heat sink 202 in an embedded packaging manner, and the vacancies in the grooves are filled with high thermal conductivity materials, so that the heat generated by the gain chip 201 can be quickly discharged, which is conducive to improving the heat dissipation performance. In addition, if there is a demand for simultaneous output of multiple wavelengths, two or three output coupling mirrors 204 can be fixed to realize simultaneous output of multiple wavelengths, and the gain chips 201 can be arranged according to the needs of the output wavelength to meet the needs of multi-wavelength application scenarios.

[0049] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0050] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A multi-wavelength laser structure, characterized in that: include: A heat sink, wherein the heat sink is rotatable along a rotation axis, and the rotation axis is perpendicular to a top surface of the heat sink; A plurality of gain chips, each of the plurality of gain chips corresponds to a different wavelength, and the plurality of gain chips are arranged in a ring around the rotation axis on the top surface of the heat sink; At least one output coupling mirror, the output coupling mirror is located at a side of the plurality of gain chips away from the heat sink, and the output coupling mirror cooperates with the gain chip facing the output coupling mirror to form a laser resonant cavity to achieve laser output; The heat sink rotates along the rotation axis to switch the gain chip facing the output coupling mirror. When different gain chips cooperate with the output coupling mirror, the wavelength of the laser output by the multi-wavelength laser structure is different.

2. The multi-wavelength laser structure according to claim 1, characterized in that: The pumping mode of the gain chip is electric pumping or optical pumping; The types of the plurality of gain chips are the same, and the gain chips are solid gain medium chips, semiconductor gain medium chips or perovskite gain medium chips; Alternatively, at least two gain chips among the plurality of gain chips are of different types, and the plurality of gain chips include at least two of: a solid gain medium chip, a semiconductor gain medium chip, and a perovskite gain medium chip.

3. The multi-wavelength laser structure according to claim 1, characterized in that: The number of the gain chips is in the range of 6 to 10, and the number of the output coupling mirrors is in the range of 1 to 4.

4. The multi-wavelength laser structure according to claim 1, characterized in that: The top surface of the heat sink has a plurality of grooves, and the gain chips are arranged in the corresponding grooves.

5. The multi-wavelength laser structure according to claim 4, characterized in that: The gain chip is welded in the corresponding groove, and the gap between the gain chip and the groove is filled with high thermal conductivity material.

6. The multi-wavelength laser structure according to claim 1, characterized in that: The multi-wavelength laser structure further includes a rotating base, which is disposed on the bottom surface of the heat sink and drives the heat sink to rotate along the rotation axis.

7. The multi-wavelength laser structure according to claim 1, characterized in that: The multi-wavelength laser structure includes a plurality of output coupling mirrors. When the heat sink is rotated to a preset position, different output coupling mirrors are matched with different gain chips to form a resonant cavity.

8. The multi-wavelength laser structure according to claim 7, characterized in that: For the gain chips facing the output coupling mirror, at least one of the gain chips is selectively pumped to achieve laser output.

9. The multi-wavelength laser structure according to claim 7, characterized in that: The types of the plurality of output coupling mirrors are the same, or at least two of the plurality of output coupling mirrors are of different types.

10. The multi-wavelength laser structure according to claim 1, characterized in that: Along a direction perpendicular to the rotation axis, the cross-sectional shape of the heat sink is circular, and the rotation axis coincides with a central axis of the heat sink.

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