Alumina carbon hybrid hard mask and method of making same

Abstract

Embodiments of the present disclosure generally relate to methods for enhancing carbon hard masks with improved etch selectivity and profile control. In some embodiments, a method of processing a carbon hard mask layer is provided, the method comprising: positioning a workpiece within a processing region of a processing chamber, where the workpiece has a carbon hard mask layer disposed on or above an underlying layer; and processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina carbon hybrid hard mask that is denser than the carbon hard mask layer. The SIS treatment includes exposing and infiltrating the carbon hard mask layer with an aluminum precursor, purging to remove gaseous residues, exposing and infiltrating the carbon hard mask layer with an oxidizing agent to produce an alumina coating disposed on an inner surface of the carbon hard mask layer, and purging the treatment region to remove gaseous residues.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of U.S. Provisional Application No. 63 / 419,589, filed on October 26, 2022, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Embodiments of the present disclosure relate generally to photoresist technology, and more particularly to methods for enhancing photoresists to have improved etch selectivity and profile control. Background Art

[0004] Integrated circuits have evolved into complex devices that can include millions of components (e.g., transistors, capacitors, and resistors) on a single chip. Photolithography can be used to form components on a chip. In general, the process of photolithography involves forming a photoresist layer on a substrate. The photoresist layer can be formed by, for example, spin coating. The photoresist layer can include a resist resin and a photoacid generator. When exposed to electromagnetic radiation in a subsequent exposure stage, the photoacid generator changes the solubility of the photoresist in the development process. The electromagnetic radiation can have any suitable wavelength (e.g., a wavelength in the extreme ultraviolet region) and can come from any suitable source (e.g., a 193nm ArF laser, an electron beam, an ion beam, or other source). Excess solvent can then be removed in a pre-exposure bake process.

[0005] During the exposure phase, a photomask or reticle may be used to selectively expose certain areas of the photoresist layer disposed on the substrate to electromagnetic radiation. Other exposure methods may be maskless exposure methods. Exposure to light may decompose the photoacid generator to generate acid and result in a latent acid image in the resist resin. After exposure, the substrate may be heated in a post-exposure bake process. During the post-exposure bake process, the acid generated by the photoacid generator reacts with the resist resin in the photoresist layer and changes the solubility of the resist in the photoresist layer during a subsequent development process.

[0006] After the post-exposure bake, the substrate and photoresist layer are developed and rinsed. Subsequently, a patterned photoresist layer is formed on the substrate. After the development and rinse process, openings are defined in the patterned photoresist layer to expose the target material underneath for etching to transfer features to the target material. Factors (e.g., imprecise control or low resolution of the photolithography exposure process, or the elasticity of the patterned layer) may cause poor critical dimensions of the patterned photoresist layer, resulting in unacceptable line width roughness (LWR). Large line width roughness (LWR) of the patterned photoresist layer may result in inaccurate feature transfer to the target material, ultimately leading to premature device failure and yield loss.

[0007] Carbon-based hardmask is a specific type of photoresist material used by the industry. However, existing carbon-based hardmask materials have limited etch selectivity between the PR layer and the corresponding underlying layer. Carbon-based hardmasks have limited etch resistance and are usually slightly deteriorated or damaged during the etching process. In addition, existing carbon-based hardmask materials have pattern transfer defects and moderate line edge roughness (LER) and line width roughness (LWR).

[0008] Therefore, there is a need for improved carbon-based hardmasks and methods of making such carbon-based hardmasks that overcome these disadvantages. Summary of the invention

[0009] Embodiments of the present disclosure generally relate to hard masks with improved etch selectivity and profile control and methods for preparing hard masks. The hard masks are aluminum oxide carbon hybrid hard masks that can be prepared from carbon hard masks. For example, the carbon hard mask layer can be processed by sequential infiltration synthesis (SIS) processing to manufacture or otherwise produce the aluminum oxide carbon hybrid hard mask.

[0010] In one or more embodiments, a method for processing a carbon hard mask layer is provided, the method comprising: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece has a carbon hard mask layer disposed on or above an underlying layer; and processing the carbon hard mask layer by exposing the workpiece to an SIS process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer. The SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores included in the carbon hard mask layer; purging the processing region to remove gaseous residues including the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores included in the carbon hard mask layer to produce an aluminum oxide coating disposed on an inner surface of the carbon hard mask layer; and purging the processing region to remove gaseous residues including the oxidant.

[0011] In other embodiments, a method of forming a device is provided, the method comprising: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece comprises a carbon hard mask layer disposed on or above an underlying layer, a silicon-containing hard mask disposed on or above the carbon hard mask layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask layer. The method also comprises: etching the silicon-containing hard mask layer and the carbon hard mask layer to each have a feature pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to a SIS process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the underlying layer to have a feature pattern of the patterned photoresist layer.

[0012] In some embodiments, a method of forming a device is provided, the method comprising: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece comprises a metal or metal nitride layer disposed on or above a substrate, a silicon-containing hard mask disposed on or above the metal or metal nitride layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method further comprises: etching the silicon-containing hard mask to have a feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; and depositing a carbon hard mask layer at least into the feature pattern of the patterned photoresist layer. The method also comprises: processing the carbon hard mask layer by exposing the workpiece to an SIS process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the silicon-containing hard mask to produce a reverse pattern in the aluminum oxide carbon hybrid hard mask.

[0013] In other embodiments, a method of forming a device is provided, the method comprising: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece comprises a metal or metal nitride layer disposed on or above a substrate, a silicon-containing hard mask disposed on or above the metal or metal nitride layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method also comprises: etching the silicon-containing hard mask to have a feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; and depositing a carbon hard mask layer into the feature pattern of the patterned photoresist layer and onto an upper surface of the patterned photoresist layer. The method further comprises: depositing a photoresist reflective coating (PR-ARC) layer on a first portion of the carbon hard mask layer while exposing a second portion of the carbon hard mask layer. In addition, the method comprises: during a first mask etching process, etching the second portion of the carbon hard mask layer while maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece; and during a second mask etching process, etching the PR-ARC layer while maintaining the first portion of the carbon hard mask layer on the workpiece. The method further includes processing the first portion of the carbon hard mask layer by exposing the workpiece to a SIS process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order that the above-mentioned features of the present disclosure can be understood in detail, a more specific description of the present disclosure (the brief summary is as above) can be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate exemplary embodiments and are therefore not to be considered as limiting its scope, and other equally effective embodiments may be admitted.

[0015] Figures 1A to 1C Illustrated are cross-sectional views of a workpiece at various stages of a machining process as described and discussed in accordance with one or more embodiments herein.

[0016] FIG. 2A to FIG. 2DIllustrated is a cross-sectional view of another workpiece at various stages of a process for preparing or otherwise forming a device as described and discussed in accordance with one or more embodiments herein.

[0017] FIG. 3A to FIG. 3F Illustrated is a cross-sectional view of another workpiece at various stages of a process for preparing or otherwise forming a device as described and discussed in accordance with one or more embodiments herein.

[0018] FIG. 4A to FIG. 4G Illustrated is a cross-sectional view of another workpiece at various stages of a process for preparing or otherwise forming a device as described and discussed in accordance with one or more embodiments herein.

[0019] To facilitate understanding, identical reference numerals in the drawings designate identical elements, where possible. It is contemplated that elements and features of one or more embodiments may be beneficially incorporated in other embodiments. DETAILED DESCRIPTION

[0020] Embodiments of the present disclosure generally relate to hard masks with improved etch selectivity and profile control and methods for preparing hard masks. The hard mask is an aluminum oxide carbon hybrid hard mask that can be prepared from a carbon hard mask. In one or more embodiments, a carbon hard mask layer is processed by a sequential infiltration synthesis (SIS) process to manufacture or otherwise produce an aluminum oxide carbon hybrid hard mask. The aluminum oxide carbon hybrid hard mask is denser than the carbon hard mask layer used to form the aluminum oxide carbon hybrid hard mask. The aluminum oxide carbon hybrid hard mask can be used during the construction, manufacture, or preparation of various devices (e.g., memory devices, logic devices, various microelectronic devices, and other types of devices). A variety of workpieces or devices containing an aluminum oxide carbon hybrid hard mask can be prepared, constructed, processed, or otherwise manufactured by the methods described and discussed herein.

[0021] Figures 1A to 1C A cross-sectional view of a workpiece 100 at various stages of a processing process (e.g., SIS processing) as described and discussed in one or more embodiments herein is shown. SIS processing is used to produce a processed mask or patterned photoresist (PR) layer that is denser and harder than an unprocessed or original mask patterned PR layer. In one or more embodiments, a method of processing a carbon hard mask layer 110 is provided, and the method includes positioning the workpiece 100 within a processing region of a processing chamber. Figure 1A As shown, workpiece 100 has a carbon hard mask layer 110 disposed on or above a bottom layer 104. As shown, bottom layer 104 may be formed, deposited, or otherwise disposed on any other layer (not shown) or substrate 102. The method includes processing carbon hard mask layer 110 by exposing workpiece 100 to a SIS process to produce an intermediate mask 118 (e.g., Figure 1B), and then produce an aluminum oxide carbon mixed hard mask 120 (as shown Figure 1C The aluminum oxide carbon hybrid hard mask 120 is denser than the carbon hard mask layer 110.

[0022] In one or more examples, the SIS process includes one or more infiltration cycles, and each of the infiltration cycles includes sequentially exposing the carbon hard mask layer 110 to an aluminum precursor, infiltrating the carbon hard mask layer 110 with the aluminum precursor through pores contained in the aluminum precursor, and purging the process area to remove gaseous residues containing the aluminum precursor. At this stage, the carbon hard mask layer 110 begins to transform into an intermediate mask 118 having aluminum incorporated into and on the inner surface of the carbon hard mask layer 110. The SIS process further includes sequentially exposing the carbon hard mask layer 110 to an oxidant, infiltrating the carbon hard mask layer 110 with the oxidant through pores contained in the carbon hard mask layer 110 to produce an aluminum oxide coating disposed on the inner surface of the carbon hard mask layer 110, and purging the process area to remove gaseous residues containing the oxidant. In some embodiments, the processing includes a single infiltration cycle to process the carbon hard mask layer 110. In other embodiments, the infiltration cycle may be repeated multiple times (eg, 2 to about 100 times or more) to process the carbon hard mask layer 110 .

[0023] Depending on the application, substrate 102 can be made of one or more materials (e.g., silicon, silicon oxide, doped silicon, silicon germanium, germanium, gallium arsenide, glass, sapphire) and any other material (e.g., metal, metal nitride, metal alloy, and other conductive or semiconductor materials), or include one or more materials and any other material. Substrate 102 or its surface can also be made of dielectric materials (e.g., silicon dioxide, silicon nitride, organic silicate, and carbon-doped silicon oxide or silicon nitride materials). Substrate 102 can be any geometric shape (e.g., circular, square, or rectangular). In some examples, substrate 102 is circular and has a diameter of 200 mm, 250 mm, 300 mm, or 450 mm.

[0024] The bottom layer 104 may be or include an oxide layer or a silicon-containing layer (e.g., silicon oxide, amorphous silicon, tetraethoxysilane (TEOS) layer, or a combination thereof). The bottom layer 104 may be formed or otherwise produced by chemical vapor deposition (CVD) or plasma enhanced CVD (PECVD). In one or more embodiments, the bottom layer 104 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. In some embodiments, the bottom layer 104 may be or include a stack disposed on or above the substrate 102. In one or more instances, the stack includes alternating silicon oxide layers and silicon nitride layers.

[0025] In one or more embodiments, the carbon hard mask layer 110 may be or include carbon, amorphous carbon, spin-on carbon (SOC), dopants thereof, or any combination thereof. The carbon hard mask layer 110 may be formed, deposited, or otherwise produced by one or more processes (e.g., a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin coating process). The carbon hard mask layer 110 may be or include a mask or other patterned layer developed, prepared, or otherwise produced by one or more processes. In some examples, the carbon hard mask layer 110 is prepared by a photolithography process (e.g., by an extreme ultraviolet (EUV) photolithography process). The carbon hard mask layer 110 is porous and may have pores throughout the material including all surfaces of the carbon hard mask layer 110. As Figure 1A As shown, a carbon hard mask layer 110 has been formed, but remains unprocessed with respect to the SIS processing described herein.

[0026] In one or more embodiments, the carbon hard mask layer 110 has a thickness ranging from about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. Figures 1A to 1C As shown, the carbon hard mask layer 110 can be a patterned layer or include a patterned layer, and the patterned layer includes a feature pattern of features 112. The height of the features 112 can be the same as or less than the thickness of the carbon hard mask layer 110. Therefore, the height of the features 112 can range from about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. The features 112 of the patterned layer or carbon hard mask layer 110 are separated by vias, gaps, or spaces, and the vias, gaps, or spaces can have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The features 112 can have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200.

[0027] In one or more embodiments, the carbon hard mask layer 110 may be or include a carbon-containing material having polar functional groups (e.g., one or more CH groups, one or more CO groups, one or more C=O groups, or any combination thereof). The polar functional groups on the inner surface of the carbon hard mask layer 110 facilitate the formation and / or deposition of the aluminum oxide coating through the intermediate mask 118 during the SIS process.

[0028] In some embodiments, the carbon hard mask layer 110 may include carbon in a range of from about 30 atomic percent (at%), about 40 at%, or about 50 at% to about 60 at%, about 70 at%, or about 80 at%. For example, the carbon hard mask layer 110 may include carbon in a range of from about 30 at% to about 80 at%, about 40 at% to about 80 at%, about 50 at% to about 80 at%, about 60 at% to about 80 at%, about 70 at% to about 80 at%, about 30 at% to about 65 at%, about 40 at% to about 65 at%, about 50 at% to about 65 at%, about 60 at% to about 65 at%, about 30 at% to about 50 at%, about 40 at% to about 50 at%, or about 45 at% to about 50 at%.

[0029] The carbon hard mask layer 110 may include hydrogen in a range of about 10 at%, about 15 at%, about 20 at%, or about 25 at% to about 30 at%, about 35 at%, about 40 at%, about 45 at%, or about 50 at%. For example, the carbon hard mask layer 110 may include hydrogen in a range of about 10 at% to about 50 at%, about 15 at% to about 50 at%, about 20 at% to about 50 at%, about 25 at% to about 50 at%, about 30 at% to about 50 at%, about 40 at% to about 50 at%, about 10 at% to about 40 at%, about 15 at% to about 40 at%, about 20 at% to about 40 at%, about 25 at% to about 40 at%, about 30 at% to about 40 at%, about 35 at% to about 40 at%, about 10 at% to about 30 at%, about 15 at% to about 30 at%, about 20 at% to about 30 at%, or about 25 at% to about 30 at%.

[0030] The carbon hard mask layer 110 may include oxygen ranging from about 1 at%, about 2 at%, about 3 at%, about 3 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 16 at%, about 18 at%, or about 20 at%. For example, the range of oxygen included in the carbon hard mask layer 110 can be about 1at% to about 20at%, about 2at% to about 20at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 1at% to about 15at%, about 2at% to about 15at%, about 5at% to about 15at%, about 8at% to about 15at%, about 10at% to about 15at%, about 12at% to about 15at%, about 15at% to about 15at%, about 18at% to about 15at%, about 1at% to about 10at%, about 2at% to about 10at%, about 5at% to about 10at%, or about 8at% to about 10at%.

[0031] In one or more examples, the carbon hard mask layer 110 may include about 30 at % to about 80 at % carbon, about 10 at % to about 50 at % hydrogen, and about 10 at % to about 20 at % oxygen. In some examples, the carbon hard mask layer 110 may include about 40 at % to about 60 at % carbon, about 20 at % to about 40 at % hydrogen, and about 12 at % to about 18 at % oxygen. In other examples, the carbon hard mask layer 110 may include about 45 at % to about 55 at % carbon, about 25 at % to about 35 at % hydrogen, and about 14 at % to about 16 at % oxygen.

[0032] Figure 1B The workpiece 100 is shown with an intermediate mask 118 having an aluminum precursor or other metal precursor absorbed or otherwise incorporated into and onto the inner surface of the carbon hard mask layer 110. Precursor coating or other forms of infiltration coating are provided throughout the inner surface of the carbon hard mask layer 110. The aluminum or other metal precursor penetrates through the pores contained throughout the carbon hard mask layer 110. Infiltration coating includes absorbing and / or condensing amounts of precursor (e.g., during a first processing segment of the SIS process). Thereafter, during a second processing segment of the SIS process, the processing area of ​​the processing chamber may be purged to remove excess or residual precursor within the processing area.

[0033] Figure 1CA workpiece 100 is shown with an aluminum oxide carbon hybrid hard mask 120 including an aluminum oxide (or other metal oxide) coating formed within and on a carbon hard mask layer 110. During a third processing section of the SIS process, the infiltrated coating is oxidized by exposure to an oxidant to form an oxide coating of the aluminum oxide carbon hybrid hard mask 120. Thereafter, during a fourth processing section of the SIS process, the processing region of the processing chamber may be purged to remove excess or residual precursors within the processing region. Figure 1C The aluminum oxide carbon hybrid hard mask 120 shown includes an aluminum oxide coating. Figure 1A The carbon hard mask layer 110 is shown to be denser and harder.

[0034] The aluminum oxide carbon hybrid hard mask 120 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the aluminum oxide carbon hybrid hard mask 120 may contain aluminum ranging from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum included in the aluminum oxide carbon hybrid hard mask 120 can be about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 3at% to about 15at%, about 5at% to about 15at%, about 8at% to about 15at%, about 10at% to about 15at%, about 12at% to about 15at%, about 14at% to about 15at%, about 3at% to about 10at%, about 5at% to about 10at%, or about 8at% to about 10at%.

[0035] The range of oxygen included in the aluminum oxide carbon hybrid hard mask 120 may be from about 3at%, about 4at%, about 5at%, about 6at%, about 8at%, or about 10at% to about 12at%, about 15at%, about 18at%, about 20at%, about 22at%, about 25at%, about 28at%, about 30at%, or about 35at%. For example, the range of oxygen included in the aluminum oxide carbon hybrid hard mask 120 may be from about 3at% to about 35at%, about 3at% to about 30at%, about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 35at%, about 5at% to about 30at%, about 5at% to about 25at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 5at % to about 30at %, about 8at % to about 30at %, about 10at % to about 30at %, about 12at % to about 30at %, about 15at % to about 30at %, about 18at % to about 30at %, about 3at % to about 15at %, about 5at % to about 15at %, about 8at % to about 15at %, about 10at % to about 15at %, about 12at % to about 15at %, about 14at % to about 15at %, about 3at % to about 10at %, about 5at % to about 10at %, or about 8at % to about 10at %.

[0036] The range of carbon included in the aluminum oxide carbon hybrid hard mask 120 may be from about 40at%, about 45at%, about 50at%, about 55at%, about 60at%, or about 65at% to about 70at%, about 75at%, about 80at%, about 85at%, about 90at%, or about 95at%. For example, the range of carbon included in the aluminum oxide carbon hybrid hard mask 120 may be from about 40at% to about 90at%, about 50at% to about 90at%, about 60at% to about 90at%, about 70at% to about 90at%, about 80at% to about 90at%, about 40at% to about 75at%, about 50at% to about 75at%, about 60at% to about 75at%, about 70at% to about 75at%, about 40at% to about 60at%, about 45at% to about 60at%, about 50at% to about 60at%, or about 55at% to about 60at%.

[0037] In one or more examples, the aluminum oxide carbon hybrid hard mask 120 may include about 5 at % to about 20 at % aluminum, about 5 at % to about 30 at % oxygen, and about 50 at % to about 90 at % carbon. In some examples, the aluminum oxide carbon hybrid hard mask 120 may include about 10 at % to about 20 at % aluminum, about 10 at % to about 30 at % oxygen, and about 50 at % to about 80 at % carbon. In one or more examples, the aluminum oxide carbon hybrid hard mask 120 may include about 5 at % to about 10 at % aluminum, about 5 at % to about 20 at % oxygen, and about 70 at % to about 90 at % carbon.

[0038] The thickness of the aluminum oxide carbon hybrid hard mask 120 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. Figure 1C As shown, the aluminum oxide carbon hybrid hard mask 120 can be a patterned layer or include a patterned layer, and the patterned layer includes a feature pattern of features 112. The height of the features 112 can be the same as or less than the thickness of the aluminum oxide carbon hybrid hard mask 120. Therefore, the height of the features 112 can range from about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. The features 112 of the patterned layer or the aluminum oxide carbon hybrid hard mask 120 are separated by vias, gaps, or spaces, and the vias, gaps, or spaces can have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The features 112 can have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200.

[0039] Sequential Infiltration Synthesis (SIS) Processing

[0040] like Figures 1A to 1C As shown, the SIS process described and discussed herein for preparing an aluminum oxide carbon hybrid hard mask 120 from a carbon hard mask layer 110 can also be used to convert any carbon hard mask layer into an aluminum oxide carbon hybrid hard mask (e.g., Figures 2A to 4G as shown).

[0041] In one or more instances, the SIS process includes: exposing the carbon hard mask layer 110 to one or more infiltration cycles of an aluminum-containing precursor (e.g., one or more aluminum precursors); infiltrating the carbon hard mask layer 110 with the precursor through pores included in the carbon hard mask layer 110; purging the process area to remove gaseous residues containing the precursor; exposing the carbon hard mask layer 110 to an oxidant; infiltrating the carbon hard mask layer 110 with the oxidant through pores included in the carbon hard mask layer 110 to produce an aluminum oxide coating disposed on an inner surface of the carbon hard mask layer 110; and purging the process area to remove gaseous residues containing the oxidant.

[0042] Each of the infiltration cycles of the SIS process includes a first processing section exposed and infiltrated by a precursor, a second processing section purging the process area to remove residual gaseous precursors, a third processing section exposed and infiltrated by an oxidant, and a fourth processing section purging the process area to remove residual gaseous precursors. During each of the infiltration cycles, the processing sections of the infiltration cycle are repeated sequentially. During the first and third processing sections of the SIS process, one or more carrier gases may flow into the process area along with the precursor and / or oxidant, respectively. During the second and fourth processing sections of the SIS process, one or more purge gases may flow into the process area which is also evacuated. The carrier gas and the purge gas may be of the same composition or of different compositions. Exemplary carrier gases and / or purge gases may be or include argon, helium, neon, nitrogen (N 2 ), hydrogen (H 2 ), or any combination thereof.

[0043] The processing region of a processing chamber is the interior volume within the processing chamber. During SIS processing, the processing region and / or the interior volume of the processing chamber is maintained at and / or adjusted to one or more pressures below atmospheric pressure or ambient pressure (e.g., less than 760 Torr). During SIS processing, the pressure of the processing region and / or the interior volume of the processing chamber is from about 0.01 Torr, about 0.1 Torr, about 1 Torr, about 1 Torr, about 5 Torr, about 10 Torr, about 15 Torr, about 20 Torr, about 25 Torr, about 35 Torr, or about 50 Torr to about 80 Torr, about 100 Torr, about 150 Torr, about 200 Torr, about 250 Torr, about 300 Torr, about 350 Torr, about 400 Torr, about 450 Torr, about 500 Torr, or about 600 Torr. For example, during SIS processing, the pressure of the processing region and / or the interior volume of the processing chamber is about 0.01 Torr to about 600 Torr, about 0.01 Torr to about 500 Torr, about 0.01 Torr to about 400 Torr, about 0.01 Torr to about 350 Torr, about 0.01 Torr to about 300 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about 200 Torr, about 0.01 Torr to about 150 Torr, about 0.01 Torr to about 150 Torr, about 0.01 Torr to about 200 Torr, about 0.01 Torr to about 2 ...50 Torr, about 0.01 Torr to about 200 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about Torr to about 100 Torr, about 0.01 Torr to about 50 Torr, about 0.1 Torr to about 600 Torr, about 0.1 Torr to about 500 Torr, about 0.1 Torr to about 400 Torr, about 0.1 Torr to about 350 Torr, about 0.1 Torr to about 300 Torr, about 0.1 Torr to about 250 Torr, about 0.1 Torr to about 200 Torr, about 0.1 Torr to about 150 Torr, about 0.1 Torr to about 100 Torr, about 0.1 Torr to about 50 Torr, about 1 Torr to about 600 Torr, about 1 Torr to about 500 Torr, about 1 Torr to about 1 Torr to about 400 Torr, about 1 Torr to about 350 Torr, about 1 Torr to about 300 Torr, about 1 Torr to about 250 Torr, about 1 Torr to about 200 Torr, about 1 Torr to about 150 Torr, about 1 Torr to about 150 Torr, about 1 Torr to about 100 Torr, about 1 Torr to about 50 Torr, about 10 Torr to about 600 Torr, about 10 Torr to about 500 Torr, about 10 Torr to about 400 Torr, about 10 Torr to about 350 Torr, about 10 Torr to about 300 Torr, about 10 Torr to about 250 Torr, about 10 Torr to about 200 Torr, about 10 Torr to about 150 Torr, about 10 Torr to about 100 Torr, about 10 Torr to about 50 Torr, about 15 Torr to about 600 Torr, about 15 Torr to about 500 Torr, about 15 Torr to about 400 Torr, about 15 Torr to about 350 Torr, about 15 Torr to about 300 Torr, about 15 Torr to about 250 Torr, about 15 Torr to about 200 Torr, about 15 Torr to about 150 Torr, about 15 Torr to about 100 Torr, about 15 Torr to about 50 Torr, about 50 Torr to about 600 Torr, about 50 Torr to about 500 Torr, about 50 Torr to about 400 Torr, about 50 Torr to about 350 Torr, about 50 Torr to about 300 Torr, about 50 Torr to about Torr to about 250 Torr, about 50 Torr to about 200 Torr, about 50 Torr to about 150 Torr, about 50 Torr to about 100 Torr, about 100 Torr to about 600 Torr, about 100 Torr to about 500 Torr, about 100 Torr to about 400 Torr, about 100 Torr to about 350 Torr, about 100 Torr to about 300 Torr, about 100 Torr to about 250 Torr, about 100 Torr to about 200 Torr, or about 100 Torr to about 150 Torr. In one or more examples, during SIS processing, the pressure of the processing region and / or the interior volume of the processing chamber is about 0.01 Torr to about 250 Torr, or about 0.1 Torr to about 50 Torr. .

[0044] During SIS treatment, each of the first treatment segment and the third treatment segment of the infiltration cycle can independently last from about 20 seconds, about 30 seconds, about 35 seconds, about 40 seconds, or about 45 seconds to about 50 seconds, about 60 seconds, about 70 seconds, about 80 seconds, about 90 seconds, about 100 seconds, about 2 minutes, about 2.5 minutes, about 3 minutes, about 4 minutes, about 5 minutes, about 6 minutes, about 8 minutes, about 10 minutes, about 12 minutes, about 15 minutes, about 18 minutes, or about 20 minutes. For example, during SIS treatment, each of the first treatment segment and the third treatment segment of the infiltration cycle can independently last from about 20 seconds to about 20 minutes, from about 20 seconds to about 15 minutes, from about 20 seconds to about 12 minutes, from about 20 seconds to about 10 minutes, from about 20 seconds to about 8 minutes, from about 20 seconds to about 6 minutes, from about 20 seconds to about 5 minutes, from about 20 seconds to about 4 minutes, from about 20 seconds to about 3 minutes, from about 20 seconds to about 2.5 minutes, from about 20 seconds to about 2 minutes, from about 20 seconds to about 100 seconds, from about 20 seconds to about 90 seconds, from about 20 seconds to about 75 seconds, from about 20 seconds to about 60 seconds, from about 20 seconds to about 45 seconds, from about 20 seconds to about 30 seconds, from about 40 seconds to about 5 minutes, From about 40 seconds to about 4 minutes, from about 40 seconds to about 3 minutes, from about 40 seconds to about 2.5 minutes, from about 40 seconds to about 2 minutes, from about 40 seconds to about 100 seconds, from about 40 seconds to about 90 seconds, from about 40 seconds to about 75 seconds, from about 40 seconds to about 60 seconds, from about 60 seconds to about 20 minutes, from about 60 seconds to about 15 minutes, from about 60 seconds to about 12 minutes, from about 60 seconds to about 10 minutes, from about 60 seconds to about 8 minutes, from about 60 seconds to about 6 minutes, from about 60 seconds to about 5 minutes, from about 60 seconds to about 4 minutes, from about 60 seconds to about 3 minutes, from about 60 seconds to about 2.5 minutes, from about 60 seconds to about 2 minutes, from about 60 seconds to about 100 seconds, from about 60 seconds to about 90 seconds, or from about 60 seconds to about 75 seconds.

[0045] In one or more examples, during the first processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to the aluminum precursor for about 1 minute to about 10 minutes while the aluminum precursor is infiltrating the carbon hard mask layer 110. In some examples, during the third processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to the oxidant for about 1 minute to about 10 minutes while the carbon hard mask layer 110 is infiltrating the oxidant.

[0046] During SIS treatment, each of the second treatment segment and the fourth treatment segment of the infiltration cycle can independently last for about 20 seconds, about 30 seconds, about 35 seconds, about 40 seconds, about 45 seconds, about 50 seconds, about 60 seconds, about 70 seconds, about 80 seconds, about 90 seconds, about 100 seconds, about 2 minutes, about 2.5 minutes, about 3 minutes, about 4 minutes, about 5 minutes, about 6 minutes, about 8 minutes, about 10 minutes, about 12 minutes, about 15 minutes, about 20 minutes, about 25 minutes, or about 30 minutes. For example, during SIS treatment, each of the second treatment segment and the fourth treatment segment of the infiltration cycle can independently last from about 20 seconds to about 30 minutes, from about 20 seconds to about 25 minutes, from about 20 seconds to about 20 minutes, from about 20 seconds to about 15 minutes, from about 20 seconds to about 12 minutes, from about 20 seconds to about 10 minutes, from about 20 seconds to about 8 minutes, from about 20 seconds to about 6 minutes, from about 20 seconds to about 5 minutes, from about 20 seconds to about 4 minutes, from about 20 seconds to about 3 minutes, from about 20 seconds to about 2.5 minutes, from about 20 seconds to about 2 minutes, from about 20 seconds to about 100 seconds, from about 20 seconds to about 90 seconds, from about 20 seconds to about 75 seconds, from about 20 seconds to about 60 seconds, from about 20 seconds to about 45 seconds, from about 20 seconds to about 30 seconds. , about 40 seconds to about 5 minutes, about 40 seconds to about 4 minutes, about 40 seconds to about 3 minutes, about 40 seconds to about 2.5 minutes, about 40 seconds to about 2 minutes, about 40 seconds to about 100 seconds, about 40 seconds to about 90 seconds, about 40 seconds to about 75 seconds, about 40 seconds to about 60 seconds, about 60 seconds to about 20 minutes, about 60 seconds to about 15 minutes, about 60 seconds to about 12 minutes, about 60 seconds to about 10 minutes, about 60 seconds to about 8 minutes, about 60 seconds to about 6 minutes, about 60 seconds to about 5 minutes, about 60 seconds to about 4 minutes, about 60 seconds to about 3 minutes, about 60 seconds to about 2.5 minutes, about 60 seconds to about 2 minutes, about 60 seconds to about 100 seconds, about 60 seconds to about 90 seconds, or about 60 seconds to about 75 seconds.

[0047] In one or more examples, during the second processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including aluminum precursors. In other examples, during the fourth processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including oxidants.

[0048] During SIS treatment, the infiltration cycle can be performed once, twice, or multiple times. During each of the infiltration cycles, the treatment segments of the infiltration cycle are sequentially repeated. In some examples, during SIS treatment, the infiltration cycle is repeated from 2 times, 3 times, 4 times, or 5 times to 6 times, 7 times, 8 times, 9 times, about 10 times, about 12 times, about 15 times, about 20 times, about 30 times, about 40 times, about 50 times, about 60 times, about 80 times, about 100 times, or more. For example, during SIS treatment, the infiltration cycle is repeated 2 times to about 100 times, 2 times to about 80 times, 2 times to about 50 times, 2 times to about 20 times, 2 times to about 15 times, 2 times to about 10 times, 2 times to 8 times, 2 times to 5 times. In one or more examples, the SIS treatment includes 1 cycle to about 100 cycles, 5 cycles to about 80 cycles, about 10 cycles to about 50 cycles, or about 20 cycles to about 40 cycles of the infiltration cycle.

[0049] The precursors exposed to the carbon hard mask layer 110 may be one or more aluminum precursors or other metal precursors. The oxidant may be or include any compound or agent that oxidizes an aluminum precursor to produce aluminum oxide or another metal precursor to produce a corresponding metal oxide. The oxidant may be or include water, ozone, oxygen plasma, oxygen radicals, oxygen (O 2 ), hydrogen peroxide, or any combination thereof.

[0050] In one or more embodiments, the precursor is one or more aluminum precursors or includes one or more aluminum precursors, and the oxide coating formed in the carbon hard mask layer 110 is aluminum oxide or includes aluminum oxide. The aluminum precursor can be or include one or more aluminum alkyl compounds, one or more aluminum alkoxide compounds, one or more aluminum halide compounds, aluminum hydride, or any combination thereof. In some examples, the aluminum precursor is trimethylaluminum, triethylaluminum, tripropylaluminum, tributylaluminum, dimethylaluminum, diethylaluminum, dipropylaluminum, dibutylaluminum, a complex thereof, or a combination thereof, or includes trimethylaluminum, triethylaluminum, tripropylaluminum, tributylaluminum, dimethylaluminum, diethylaluminum, dipropylaluminum, dibutylaluminum, a complex thereof, or a combination thereof.

[0051] In one or more examples, the aluminum precursor is one or more alkyl aluminum compounds (e.g., trimethyl aluminum) or includes one or more alkyl aluminum compounds, and the oxidant is water or includes water. In other examples, the aluminum precursor is one or more alkoxy aluminum compounds or includes one or more alkoxy aluminum compounds, and the oxidant is ozone or oxygen plasma or includes ozone or oxygen plasma.

[0052] FIG. 2A to FIG. 2DA cross-sectional view of a workpiece 200 at various stages of a process for preparing or otherwise forming a device as described and discussed in one or more embodiments herein is illustrated. The device may be or include a memory device, a logic device, a microelectronic device, and / or other device. In one or more embodiments, a method for forming a device is provided, the method comprising positioning a workpiece 200 within a processing region of a processing chamber. The workpiece 200 comprises a carbon hard mask layer 210 disposed on or over a bottom layer 204, a silicon-containing hard mask 230 disposed on or over the carbon hard mask layer 210, and a patterned photoresist (PR) layer 240 having a feature pattern of features 242 disposed on the silicon-containing hard mask 230. The method also includes: etching the silicon-containing hard mask 230 and the carbon hard mask layer 210 to each have features 242 of the patterned PR layer 240; processing the carbon hard mask layer 210 by exposing the workpiece 200 to a SIS process to produce an aluminum oxide carbon hybrid hard mask 220; and etching the bottom layer 204 to have features 242 of the patterned PR layer 240.

[0053] The bottom layer 204 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. The bottom layer 204 may be or include a stack of layers disposed on or above the substrate 202. In one or more examples, the stack of layers includes alternating silicon oxide layers and silicon nitride layers. The substrate 202 may be or include any type of substrate (including the substrate 102 described and discussed above). In some examples, the bottom layer 204 may be or include one or more layers of any type (including the bottom layer 104 described and discussed above).

[0054] like Figure 2A As shown, the patterned PR layer 240 can be deposited, formed, positioned, or otherwise disposed on the silicon-containing hard mask 230. In one or more embodiments, the patterned PR layer 240 can be produced or otherwise formed by an extreme ultraviolet (EUV) lithography process or a deep ultraviolet (DUV) lithography process. In one or more examples, the patterned PR layer 240 can be or include an EUV stack, the EUV stack including a PR layer below a bottom ARC (BARC) layer to provide a PR / BARC stack. In other examples, the patterned PR layer 240 can be or include a DUV stack, the DUV stack including a PR layer below a BARC layer below a dielectric ARC (DARC) layer to provide a PR / BARC / DARC stack.

[0055] In some embodiments, Figure 2BAs shown, feature 242 is completely etched through the thickness of silicon-containing hard mask 230. Silicon-containing hard mask 230 can be or include silicon oxide, silicon nitride, silicon oxynitride, dopants thereof, or any combination thereof. In one or more examples, silicon-containing hard mask 230 can be etched or otherwise removed by exposing silicon-containing hard mask 230 to one or more carbon fluoride etchants and one or more processing gases. The carbon fluoride etchant can be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The processing gas can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0056] In some instances, such as Figure 2B As shown, the feature 242 is at least partially or completely etched through the thickness of the carbon hard mask layer 210. The carbon hard mask layer 210 can be or include any type of carbon hard mask (including the carbon hard mask 110 described and discussed above). In one or more examples, the carbon hard mask layer 210 can be etched or otherwise removed by exposing the carbon hard mask layer 210 to one or more etchant gases and one or more passivation gases. The etchant gas can be or include argon, oxygen, or a combination thereof, and the passivation gas can be or include methane, sulfur dioxide, carbonyl sulfide, or any combination thereof.

[0057] Figure 2B to Figure 2C The carbon hard mask layer 210 ( Figure 2B ) Aluminum oxide carbon hybrid hard mask 220 is produced by SIS processing ( Figure 2C ) processing or transformation. The SIS process is selective to the carbon hard mask layer 210 while being non-reactive or substantially non-reactive to other exposed surfaces and layers on the workpiece 200 (e.g., the bottom layer 204, the silicon-containing hard mask 230, and the patterned PR layer 240). The aluminum oxide carbon hybrid hard mask 220 is denser than the carbon hard mask layer 210. The aluminum oxide carbon hybrid hard mask 220 may have the composition and properties of the aluminum oxide carbon hybrid hard mask 120 as described and discussed above.

[0058] In some examples, feature 242 is at least partially or completely etched through the thickness of bottom layer 204. Figure 2D As shown, feature 242 is only partially etched into the thickness of bottom layer 204. Bottom layer 204 can be partially etched by exposing bottom layer 204 to one or more carbon fluoride etchants and one or more processing gases. The carbon fluoride etchant can be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The processing gas can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2), or any combination thereof.

[0059] The aluminum oxide carbon hybrid hard mask 220 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the aluminum oxide carbon hybrid hard mask 220 may contain aluminum ranging from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum included in the aluminum oxide carbon hybrid hard mask 220 can be about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 3at% to about 15at%, about 5at% to about 15at%, about 8at% to about 15at%, about 10at% to about 15at%, about 12at% to about 15at%, about 14at% to about 15at%, about 3at% to about 10at%, about 5at% to about 10at%, or about 8at% to about 10at%.

[0060] The range of oxygen included in the aluminum oxide carbon hybrid hard mask 220 may be from about 3at%, about 4at%, about 5at%, about 6at%, about 8at%, or about 10at% to about 12at%, about 15at%, about 18at%, about 20at%, about 22at%, about 25at%, about 28at%, about 30at%, or about 35at%. For example, the range of oxygen included in the aluminum oxide carbon hybrid hard mask 220 may be from about 3at% to about 35at%, about 3at% to about 30at%, about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 35at%, about 5at% to about 30at%, about 5at% to about 25at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 5at % to about 30at %, about 8at % to about 30at %, about 10at % to about 30at %, about 12at % to about 30at %, about 15at % to about 30at %, about 18at % to about 30at %, about 3at % to about 15at %, about 5at % to about 15at %, about 8at % to about 15at %, about 10at % to about 15at %, about 12at % to about 15at %, about 14at % to about 15at %, about 3at % to about 10at %, about 5at % to about 10at %, or about 8at % to about 10at %.

[0061] The range of carbon included in the aluminum oxide carbon hybrid hard mask 220 may be from about 40at%, about 45at%, about 50at%, about 55at%, about 60at%, or about 65at% to about 70at%, about 75at%, about 80at%, about 85at%, about 90at%, or about 95at%. For example, the range of carbon included in the aluminum oxide carbon hybrid hard mask 220 may be from about 40at% to about 90at%, about 50at% to about 90at%, about 60at% to about 90at%, about 70at% to about 90at%, about 80at% to about 90at%, about 40at% to about 75at%, about 50at% to about 75at%, about 60at% to about 75at%, about 70at% to about 75at%, about 40at% to about 60at%, about 45at% to about 60at%, about 50at% to about 60at%, or about 55at% to about 60at%.

[0062] In one or more examples, the aluminum oxide carbon hybrid hard mask 220 may include about 5 at % to about 20 at % aluminum, about 5 at % to about 30 at % oxygen, and about 50 at % to about 90 at % carbon. In some examples, the aluminum oxide carbon hybrid hard mask 220 may include about 10 at % to about 20 at % aluminum, about 10 at % to about 30 at % oxygen, and about 50 at % to about 80 at % carbon. In one or more examples, the aluminum oxide carbon hybrid hard mask 220 may include about 5 at % to about 10 at % aluminum, about 5 at % to about 20 at % oxygen, and about 70 at % to about 90 at % carbon.

[0063] The thickness of the aluminum oxide carbon hybrid hard mask 220 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. Figure 2D As shown, the aluminum oxide carbon hybrid hard mask 220 can be a patterned layer or include a patterned layer, and the patterned layer includes a feature pattern of features 242. The height of the feature pattern or feature 242 can be the same as or less than the thickness of the aluminum oxide carbon hybrid hard mask 220. Therefore, the height of the feature pattern or feature 242 can range from about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. The feature pattern or feature 242 of the patterned layer or aluminum oxide carbon hybrid hard mask 220 is separated by a through hole, a gap, or a space, and the through hole, the gap, or the space can have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The feature pattern or feature 242 can have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200.

[0064] FIG. 3A to FIG. 3FA cross-sectional view of a workpiece 300 at different stages of a process for preparing or otherwise forming a device as described and discussed in one or more embodiments herein is illustrated. The device may be or include a memory device, a logic device, a microelectronic device, and / or other device. In one or more embodiments, a method for forming or otherwise preparing a device is provided, the method comprising: positioning a workpiece 300 within a processing region of a processing chamber, wherein the workpiece 300 comprises a metal or metal nitride layer 304 disposed on or above a substrate 302, a silicon-containing hard mask 330 disposed on or above the metal or metal nitride layer 304, and a patterned photoresist (PR) layer 340 having a feature pattern of features 342 disposed on the silicon-containing hard mask 330. The method further comprises: etching the silicon-containing hard mask 330 to have a feature pattern of features 342 of the patterned PR layer 340; removing the patterned PR layer 340 from the silicon-containing hard mask 330; and depositing a carbon hard mask layer 310 at least into the features 342 of the patterned PR layer 340. The method also includes processing the carbon hard mask layer 310 by exposing the workpiece 300 to a SIS process to produce an aluminum oxide carbon hybrid hard mask 320 that is denser than the carbon hard mask layer 310 ; and etching the silicon-containing hard mask 330 to produce a reverse pattern 332 in the aluminum oxide carbon hybrid hard mask 320 .

[0065] like Figure 3A As shown, the patterned PR layer 340 can be deposited, formed, positioned, or otherwise disposed on the silicon-containing hard mask 330. In one or more embodiments, the patterned PR layer 340 can be produced or otherwise formed by an extreme ultraviolet (EUV) lithography process or a deep ultraviolet (DUV) lithography process. In one or more examples, the patterned PR layer 340 can be or include an EUV stack including a PR layer below a bottom ARC (BARC) layer to provide a PR / BARC stack. In other examples, the patterned PR layer 340 can be or include a DUV stack including a PR layer below a BARC layer below a dielectric ARC (DARC) layer to provide a PR / BARC / DARC stack.

[0066] The metal or metal nitride layer 304 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. The metal or metal nitride layer 304 may be or include a stack disposed on or above the substrate 302. In one or more examples, the stack includes alternating silicon oxide layers and silicon nitride layers. The substrate 302 may be or include any type of substrate (including the substrate 102 described and discussed above).

[0067] In some examples, the metal or metal nitride layer 304 may be or include one or more metal layers. In one or more examples, the metal layer may be or include an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof. In other examples, the metal or metal nitride layer 304 may be or include a metal nitride layer, and the metal nitride layer may be or include an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. In some examples, the metal or metal nitride layer 304 may be or include one or more layers of any type (including the bottom layer 104 described and discussed above).

[0068] In some embodiments, Figure 3B As shown, feature 342 is completely etched through the thickness of silicon-containing hard mask 330. Thereafter, patterned PR layer 340 can be removed from workpiece 300. Silicon-containing hard mask 330 can be or include silicon oxide, silicon nitride, silicon oxynitride, dopants thereof, or any combination thereof. In one or more examples, silicon-containing hard mask 330 can be or include any type of hard mask (including silicon-containing hard mask 230 described and discussed above). In some examples, silicon-containing hard mask 330 can be etched or otherwise removed by exposing silicon-containing hard mask 330 to one or more carbon-fluorine etchants and one or more processing gases. Carbon-fluorine etchants can be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. Processing gases can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0069] In one or more embodiments, the patterned PR layer 340 can be formed from a silicon-containing hard mask 330 (including exposing the patterned PR layer 340 to an etching process). In some examples, the etching process includes exposing the patterned PR layer 340 to one or more halogen-containing compounds and oxygen (O 2 ), argon, helium, or a combination thereof. The halogen-containing compound may be or include chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof. In other embodiments, the patterned PR layer 340 can be removed from the silicon-containing hard mask 330 by exposing the patterned PR layer 340 to a polishing process. The polishing process can be a chemical mechanical polishing (CMP) process.

[0070] like Figure 3CAs shown, a carbon hard mask layer 310 may be deposited or otherwise formed on the upper surface of the patterned PR layer 340, while being deposited into the feature pattern of features 342 of the patterned PR layer 340. The carbon hard mask layer 310 may have the composition and properties of the carbon hard mask layer 110 as described and discussed above, and may be deposited or otherwise formed by the same process as the carbon hard mask layer 110 as described and discussed above.

[0071] like Figure 3D As shown, the carbon hard mask layer 310 may be removed from the upper surface of the patterned PR layer 340 before processing the carbon hard mask layer 310 using the SIS process. In one or more examples, removing the carbon hard mask layer 310 from the upper surface of the patterned PR layer 340 includes a polishing process (eg, CMP).

[0072] FIG. 3D to FIG. 3E The carbon hard mask layer 310 ( Figure 3D ) Aluminum oxide carbon hybrid hard mask 320 is produced by SIS processing ( Figure 3E ) processing or transformation. The SIS process is selective to the carbon hard mask layer 310 while being non-reactive or substantially non-reactive to other exposed surfaces and layers (e.g., the metal or metal nitride layer 304 on the workpiece 300 and the silicon-containing hard mask 330). The aluminum oxide carbon hybrid hard mask 320 is denser than the carbon hard mask layer 310. The aluminum oxide carbon hybrid hard mask 320 may have the composition and properties of the aluminum oxide carbon hybrid hard mask 120 as described and discussed above.

[0073] In one or more embodiments, Figure 3F As shown, the silicon-containing hard mask 330 can be etched or otherwise removed to produce an inverse pattern 332 within the aluminum oxide carbon hybrid hard mask 320. In one or more examples, the silicon-containing hard mask 330 can be etched by exposing the workpiece 300 to an inductively coupled plasma (ICP) to remove the silicon-containing hard mask 330 while maintaining the aluminum oxide carbon hybrid hard mask 320 on the metal or nitride layer 304. In some examples, the ICP includes oxygen (O 2 ) and argon or a mixture of oxygen (O 2 ) and argon mixture is formed.

[0074] In other embodiments, the silicon-containing hard mask 330 may be etched or otherwise removed by other processes to produce an inverse pattern 332 within the aluminum oxide carbon hybrid hard mask 320. The workpiece 300 may be exposed to a selective removal process or a wet etching process to remove the silicon-containing hard mask 330 while maintaining the aluminum oxide carbon hybrid hard mask 320 on the metal or metal nitride layer 304.

[0075] The aluminum oxide carbon hybrid hard mask 320 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the aluminum oxide carbon hybrid hard mask 320 may contain aluminum ranging from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum included in the aluminum oxide carbon hybrid hard mask 320 can be about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 3at% to about 15at%, about 5at% to about 15at%, about 8at% to about 15at%, about 10at% to about 15at%, about 12at% to about 15at%, about 14at% to about 15at%, about 3at% to about 10at%, about 5at% to about 10at%, or about 8at% to about 10at%.

[0076] The range of oxygen included in the aluminum oxide carbon hybrid hard mask 320 may be from about 3at%, about 4at%, about 5at%, about 6at%, about 8at%, or about 10at% to about 12at%, about 15at%, about 18at%, about 20at%, about 22at%, about 25at%, about 28at%, about 30at%, or about 35at%. For example, the range of oxygen included in the aluminum oxide carbon hybrid hard mask 320 may be from about 3at% to about 35at%, about 3at% to about 30at%, about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 35at%, about 5at% to about 30at%, about 5at% to about 25at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 5at % to about 30at %, about 8at % to about 30at %, about 10at % to about 30at %, about 12at % to about 30at %, about 15at % to about 30at %, about 18at % to about 30at %, about 3at % to about 15at %, about 5at % to about 15at %, about 8at % to about 15at %, about 10at % to about 15at %, about 12at % to about 15at %, about 14at % to about 15at %, about 3at % to about 10at %, about 5at % to about 10at %, or about 8at % to about 10at %.

[0077] The range of carbon included in the aluminum oxide carbon hybrid hard mask 320 may be from about 40at%, about 45at%, about 50at%, about 55at%, about 60at%, or about 65at% to about 70at%, about 75at%, about 80at%, about 85at%, about 90at%, or about 95at%. For example, the range of carbon included in the aluminum oxide carbon hybrid hard mask 320 may be from about 40at% to about 90at%, about 50at% to about 90at%, about 60at% to about 90at%, about 70at% to about 90at%, about 80at% to about 90at%, about 40at% to about 75at%, about 50at% to about 75at%, about 60at% to about 75at%, about 70at% to about 75at%, about 40at% to about 60at%, about 45at% to about 60at%, about 50at% to about 60at%, or about 55at% to about 60at%.

[0078] In one or more examples, the aluminum oxide carbon hybrid hard mask 320 may include about 5 at % to about 20 at % aluminum, about 5 at % to about 30 at % oxygen, and about 50 at % to about 90 at % carbon. In some examples, the aluminum oxide carbon hybrid hard mask 320 may include about 10 at % to about 20 at % aluminum, about 10 at % to about 30 at % oxygen, and about 50 at % to about 80 at % carbon. In one or more examples, the aluminum oxide carbon hybrid hard mask 320 may include about 5 at % to about 10 at % aluminum, about 5 at % to about 20 at % oxygen, and about 70 at % to about 90 at % carbon.

[0079] The thickness of the aluminum oxide carbon hybrid hard mask 320 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. Figure 3F As shown, the aluminum oxide carbon hybrid hard mask 320 can be a patterned layer or include a patterned layer, and the patterned layer includes a feature pattern of features 342. The height of the feature pattern or feature 342 can be the same as or less than the thickness of the aluminum oxide carbon hybrid hard mask 320. Therefore, the height of the feature pattern or feature 342 can range from about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. The feature pattern or feature 342 of the patterned layer or aluminum oxide carbon hybrid hard mask 320 is separated by a through hole, a gap, or a space, and the through hole, the gap, or the space can have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The feature pattern or feature 342 can have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200.

[0080] FIG. 4A to FIG. 4GA cross-sectional view of a workpiece 400 at various stages of a process for preparing or otherwise forming a device as described and discussed in one or more embodiments herein is illustrated. The device may be or include a memory device, a logic device, a microelectronic device, and / or other device. In one or more embodiments, a method for forming or otherwise producing a device is provided, the method comprising positioning a workpiece 400 within a processing region of a processing chamber, wherein the workpiece 400 comprises a metal or metal nitride layer 404 disposed on or over a substrate 402, a silicon-containing hard mask 430 disposed on or over the metal or metal nitride layer 404, and a patterned photoresist (PR) layer 440 having a feature pattern of features 442 disposed on the silicon-containing hard mask 430. The method also includes etching the silicon-containing hard mask 430 to have a feature pattern of features 442 of the patterned PR layer 440; removing the patterned PR layer 440 from the silicon-containing hard mask 430; and depositing a carbon hard mask layer 410 into the features 442 of the patterned PR layer 440 and onto an upper surface of the patterned PR layer 440. The method further includes depositing a photoresistance reflective coating (PR-ARC) layer 450 on a first portion of the carbon hard mask layer 410 while exposing a second portion of the carbon hard mask layer 410. In addition, the method includes etching the second portion of the carbon hard mask layer 410 while maintaining the PR-ARC layer 450 and the first portion of the carbon hard mask layer 410 on the workpiece 400 during a first mask etching process; and etching the PR-ARC layer 450 while maintaining the first portion of the carbon hard mask layer 410 on the workpiece 400 during a second mask etching process. The method further includes processing a first portion of the carbon hard mask layer 410 by exposing the workpiece 400 to a SIS process to produce an aluminum oxide carbon hybrid hard mask 420 that is denser than the carbon hard mask layer 410 .

[0081] like Figure 4A As shown, the patterned PR layer 440 can be deposited, formed, positioned, or otherwise disposed on the silicon-containing hard mask 430. In one or more embodiments, the patterned PR layer 440 can be produced or otherwise formed by an extreme ultraviolet (EUV) lithography process or a deep ultraviolet (DUV) lithography process. In one or more examples, the patterned PR layer 440 can be or include an EUV stack including a PR layer below a bottom ARC (BARC) layer to provide a PR / BARC stack. In other examples, the patterned PR layer 440 can be or include a DUV stack including a PR layer below a BARC layer below a dielectric ARC (DARC) layer to provide a PR / BARC / DARC stack.

[0082] The metal or metal nitride layer 404 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. The metal or metal nitride layer 404 may be or include a stack disposed on or above the substrate 402. In one or more examples, the stack includes alternating silicon oxide layers and silicon nitride layers. The substrate 402 may be or include any type of substrate (including the substrate 102 described and discussed above).

[0083] In some examples, the metal or metal nitride layer 404 may be or include one or more metal layers. In one or more examples, the metal layer may be or include an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof. In other examples, the metal or metal nitride layer 404 may be or include a metal nitride layer, and the metal nitride layer may be or include an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. In some examples, the metal or metal nitride layer 404 may be or include one or more layers of any type (including the bottom layer 104 and / or the metal or metal nitride layer 304 described and discussed above).

[0084] In some embodiments, Figure 4B As shown, feature 442 is completely etched through the thickness of silicon-containing hard mask 430. Thereafter, patterned PR layer 440 can be removed from workpiece 400. Silicon-containing hard mask 430 can be or include silicon oxide, silicon nitride, silicon oxynitride, dopants thereof, or any combination thereof. In one or more examples, silicon-containing hard mask 430 can be or include any type of hard mask (including silicon-containing hard mask 230 described and discussed above). In some examples, silicon-containing hard mask 430 can be etched or otherwise removed by exposing silicon-containing hard mask 430 to one or more carbon-fluorine etchants and one or more processing gases. Carbon-fluorine etchants can be or include tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The processing gas can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0085] In one or more embodiments, the patterned PR layer 440 can be formed from a silicon-containing hard mask 430 (including exposing the patterned PR layer 440 to an etching process). In some examples, the etching process includes exposing the patterned PR layer 440 to one or more halogen-containing compounds and oxygen (O 2 ), argon, helium, or a combination thereof. The halogen-containing compound may be or include chloride (Cl 2), hydrogen bromide (HBr), or any combination thereof. In other embodiments, the patterned PR layer 440 can be removed from the silicon-containing hard mask 430 by exposing the patterned PR layer 440 to a polishing process. The polishing process can be a chemical mechanical polishing (CMP) process.

[0086] like Figure 4C As shown, a carbon hard mask layer 410 may be deposited or otherwise formed on the upper surface of the patterned PR layer 440 while being deposited into features 442 of the patterned PR layer 440. The carbon hard mask layer 410 may have the composition and properties of the carbon hard mask layer 110 as described and discussed above, and may be deposited or otherwise formed by the same process as the carbon hard mask layer 110 as described and discussed above.

[0087] like Figure 4D As shown, a photoresistance reflective coating (PR-ARC) layer 450 can be deposited, formed, or otherwise disposed on one or more first portions of the carbon hard mask layer 410 while leaving one or more second portions of the carbon hard mask layer 410 exposed. The PR-ARC layer 450 can be produced by EUV lithography and / or DUV lithography. In one or more examples, the PR-ARC layer 450 can be or include a photoresist layer, a bottom anti-reflective coating (BARC) layer, and a dielectric anti-reflective coating (DARC) layer. In other examples, the PR-ARC layer 450 can be or include a photoresist layer and a silicon-containing anti-reflective coating (SiARC) layer.

[0088] like Figure 4E As shown, during the first mask etching process, the second portion of the carbon hard mask layer 410 is etched or otherwise removed while maintaining the PR-ARC layer 450 and the first portion of the carbon hard mask layer 410 on the workpiece 400. In one or more examples, the first mask etching process includes exposing the workpiece 400 to the ICP while removing the second portion of the carbon hard mask layer 410 and maintaining the PR-ARC layer 450 and the first portion of the carbon hard mask layer 410 on the workpiece 400. In some examples, the ICP includes oxygen (O 2 ) and argon or a mixture of oxygen (O 2 ) and argon mixture is formed.

[0089] like Figure 4F As shown, during the second mask etching process, the PR-ARC layer 450 is etched or otherwise removed while maintaining the first portion of the carbon hard mask layer 410 on the workpiece 400. The second mask etching process includes exposing the workpiece 400 to a selective removal process or a wet etching process to remove the PR-ARC layer 450 while maintaining the first portion of the carbon hard mask layer 410 on the workpiece 400.

[0090] Figures 4F to 4G The carbon hard mask layer 410 ( Figure 4F ) Aluminum oxide carbon hybrid hard mask 420 is produced by SIS processing ( Figure 4G ) processing or transformation. The SIS process is selective to the carbon hard mask layer 410 while being non-reactive or substantially non-reactive to other exposed surfaces and layers (e.g., the metal or metal nitride layer 404 on the workpiece 400 and the silicon-containing hard mask 430). The aluminum oxide carbon hybrid hard mask 420 is denser than the carbon hard mask layer 410. The aluminum oxide carbon hybrid hard mask 420 may have the composition and properties of the aluminum oxide carbon hybrid hard mask 120 as described and discussed above.

[0091] The aluminum oxide carbon hybrid hard mask 420 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the aluminum oxide carbon hybrid hard mask 420 may contain aluminum ranging from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum included in the aluminum oxide carbon hybrid hard mask 420 can be about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 3at% to about 15at%, about 5at% to about 15at%, about 8at% to about 15at%, about 10at% to about 15at%, about 12at% to about 15at%, about 14at% to about 15at%, about 3at% to about 10at%, about 5at% to about 10at%, or about 8at% to about 10at%.

[0092] The range of oxygen included in the aluminum oxide carbon hybrid hard mask 420 may be from about 3at%, about 4at%, about 5at%, about 6at%, about 8at%, or about 10at% to about 12at%, about 15at%, about 18at%, about 20at%, about 22at%, about 25at%, about 28at%, about 30at%, or about 35at%. For example, the range of oxygen included in the aluminum oxide carbon hybrid hard mask 420 may be from about 3at% to about 35at%, about 3at% to about 30at%, about 3at% to about 25at%, about 3at% to about 20at%, about 5at% to about 35at%, about 5at% to about 30at%, about 5at% to about 25at%, about 5at% to about 20at%, about 8at% to about 20at%, about 10at% to about 20at%, about 12at% to about 20at%, about 15at% to about 20at%, about 18at% to about 20at%, about 5at % to about 30at %, about 8at % to about 30at %, about 10at % to about 30at %, about 12at % to about 30at %, about 15at % to about 30at %, about 18at % to about 30at %, about 3at % to about 15at %, about 5at % to about 15at %, about 8at % to about 15at %, about 10at % to about 15at %, about 12at % to about 15at %, about 14at % to about 15at %, about 3at % to about 10at %, about 5at % to about 10at %, or about 8at % to about 10at %.

[0093] The range of carbon included in the aluminum oxide carbon hybrid hard mask 420 may be from about 40at%, about 45at%, about 50at%, about 55at%, about 60at%, or about 65at% to about 70at%, about 75at%, about 80at%, about 85at%, about 90at%, or about 95at%. For example, the range of carbon included in the aluminum oxide carbon hybrid hard mask 420 may be from about 40at% to about 90at%, about 50at% to about 90at%, about 60at% to about 90at%, about 70at% to about 90at%, about 80at% to about 90at%, about 40at% to about 75at%, about 50at% to about 75at%, about 60at% to about 75at%, about 70at% to about 75at%, about 40at% to about 60at%, about 45at% to about 60at%, about 50at% to about 60at%, or about 55at% to about 60at%.

[0094] In one or more examples, the aluminum oxide carbon hybrid hard mask 420 may include about 5 at % to about 20 at % aluminum, about 5 at % to about 30 at % oxygen, and about 50 at % to about 90 at % carbon. In some examples, the aluminum oxide carbon hybrid hard mask 420 may include about 10 at % to about 20 at % aluminum, about 10 at % to about 30 at % oxygen, and about 50 at % to about 80 at % carbon. In one or more examples, the aluminum oxide carbon hybrid hard mask 420 may include about 5 at % to about 10 at % aluminum, about 5 at % to about 20 at % oxygen, and about 70 at % to about 90 at % carbon.

[0095] The thickness of the aluminum oxide carbon hybrid hard mask 420 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. Figure 4G As shown, the aluminum oxide carbon hybrid hard mask 420 can be a patterned layer or include a patterned layer, and the patterned layer includes a feature pattern of features 442. The height of the feature pattern or feature 442 can be the same as or less than the thickness of the aluminum oxide carbon hybrid hard mask 420. Therefore, the height of the feature pattern or feature 442 can range from about 1 μm to about 20 μm, about 2 μm to about 10 μm, or about 3 μm to about 6 μm. The feature pattern or feature 442 of the patterned layer or aluminum oxide carbon hybrid hard mask 420 is separated by a through hole, a gap, or a space, and the through hole, the gap, or the space can have a width of about 5 nm to about 250 nm, about 10 nm to about 150 nm, or about 20 nm to about 100 nm. The feature pattern or feature 442 can have an aspect ratio of about 20 to about 500, about 30 to about 300, or about 40 to about 200.

[0096] Most conventional chemical vapor deposition (CVD) chambers or atomic layer deposition (ALD) chambers can serve as processing chambers suitable for performing the SIS process described and discussed herein. One example of a processing chamber that can be adapted to benefit from SIS processing is the CENTRIS 1000 commercially available from Applied Materials, Inc. ® Sym3™ etch processing chamber. An example of a tool or system that benefits from SIS processing is the Centura with iSprint™ ALD / CVD SSW chamber commercially available from Applied Materials, Inc. ® System or Endura ® system.

[0097] Embodiments of the present disclosure further relate to any one or more of the following examples 1-185.

[0098] Example 1: A method for processing a carbon hard mask layer, comprising: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises a carbon hard mask layer disposed on or above a base layer; and processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purging the processing region to remove gaseous residues comprising the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an aluminum oxide coating disposed on an inner surface of the carbon hard mask layer; and purging the processing region to remove gaseous residues comprising the oxidant.

[0099] Example 2: The method of Example 1, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

[0100] Example 3: The method of example 1 or 2, wherein the carbon hard mask layer is a patterned layer.

[0101] Example 4: The method of any of Examples 1-3, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm.

[0102] Example 5: The method of any of Examples 1-4, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0103] Example 6: The method of any of Examples 1-5, wherein the patterned layer comprises features having an aspect ratio of about 20 to about 500.

[0104] Example 7: The method of any one of Examples 1-6, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the aluminum oxide coating is disposed on the inner surface having the polar functional groups.

[0105] Example 8: The method according to Example 7, wherein the polar functional group includes a CH group, a CO group, a C=O group, or any combination thereof.

[0106] Example 9: The method of any of Examples 1-8, wherein the carbon hard mask layer is deposited by a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin coating process.

[0107] Example 10: The method of any of Examples 1-9, wherein the carbon hard mask layer comprises about 30 atomic percent (at %) to about 80 at % carbon, about 10 at % to about 50 at % hydrogen, and about 10 at % to about 20 at % oxygen.

[0108] Example 11: The method of any of Examples 1-10, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0109] Example 12: The method of any of Examples 1-11, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0110] Example 13: The method of any of Examples 1-12, wherein the bottom layer comprises a metal oxide, a metal nitride, a silicon oxide, a silicon nitride, a silicon oxynitride, a dopant thereof, or any combination thereof.

[0111] Example 14: The method of any of Examples 1-13, wherein the bottom layer comprises a stack disposed on or over the substrate.

[0112] Example 15: The method of Example 14, wherein the layer stack comprises alternating silicon oxide layers and silicon nitride layers.

[0113] Example 16: The method of any one of Examples 1-15, wherein the aluminum precursor comprises an alkyl aluminum compound.

[0114] Example 17: The method of any one of Examples 1-16, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

[0115] Example 18: The method of any of Examples 1-17, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0116] Example 19: The method according to any one of Examples 1-18, wherein during the SIS treatment, the infiltration cycle is repeated 2 to about 50 times.

[0117] Example 20: The method of any of Examples 1-19, wherein during SIS processing, a processing region of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr.

[0118] Example 21: The method of any of Examples 1-20, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the aluminum precursor.

[0119] Example 22: The method of any of Examples 1-21, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including an aluminum precursor.

[0120] Example 23: The method of any of Examples 1-22, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the oxidant.

[0121] Example 24: The method of any of Examples 1-23, wherein during each of the permeation cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including oxidants.

[0122] Example 25: A method for forming a device, comprising: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece comprises: a carbon hard mask layer disposed on or above an underlying layer; a silicon-containing hard mask disposed on or above the carbon hard mask layer; and a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask layer and the carbon hard mask layer to respectively have the feature patterns of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the underlying layer to have the feature pattern of the patterned photoresist layer.

[0123] Example 26: A method according to Example 25, wherein the SIS treatment includes one or more infiltration cycles, and each of the infiltration cycles includes: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores included in the carbon hard mask layer; purging the treatment area to remove gaseous residues including the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores included in the carbon hard mask layer to produce an aluminum oxide coating disposed on an inner surface of the carbon hard mask layer; and purging the treatment area to remove gaseous residues including the oxidant.

[0124] Example 27: The method of Example 25 or 26, wherein the aluminum precursor comprises an alkyl aluminum compound.

[0125] Example 28: The method of any one of Examples 25-27, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

[0126] Example 29: The method of any of Examples 25-28, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0127] Example 30: The method of any one of Examples 25-29, wherein during the SIS treatment, the infiltration cycle is repeated 2 to about 50 times.

[0128] Example 31: The method of any of Examples 25-30, wherein during SIS processing, a processing region of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr.

[0129] Example 32: The method of any of Examples 25-31, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the aluminum precursor.

[0130] Example 33: The method of any of Examples 25-32, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including an aluminum precursor.

[0131] Example 34: The method of any of Examples 25-33, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the oxidant.

[0132] Example 35: The method of any of Examples 25-34, wherein during each of the permeation cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including oxidants.

[0133] Example 36: The method of any one of Examples 25-35, wherein the patterned photoresist layer is produced by an extreme ultraviolet (EUV) lithography process or a deep ultraviolet (DUV) lithography process.

[0134] Example 37: The method of any of Examples 25-36, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, dopants thereof, or any combination thereof.

[0135] Example 38: The method of any of Examples 25-37, wherein the device is a memory device, a logic device, or a microelectronic device.

[0136] Example 39: The method of any of Examples 25-38, wherein the pattern of features is etched completely through the thickness of the silicon-containing hard mask.

[0137] Example 40: The method of any of Examples 25-39, wherein etching the silicon-containing hard mask further comprises exposing the silicon-containing hard mask to a carbon fluorine etchant and a process gas.

[0138] Example 41: The method of Example 40, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the process gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0139] Example 42: The method of any of Examples 25-41, wherein the pattern of features is etched completely through the thickness of the carbon hard mask layer.

[0140] Example 43: The method of any of Examples 25-42, wherein etching the carbon hard mask layer further comprises: exposing the carbon hard mask layer to an etchant gas and a passivation gas.

[0141] Example 44: The method of Example 43, wherein the etchant gas comprises argon, oxygen, or a combination thereof, and the passivation gas comprises methane, sulfur dioxide, carbonyl sulfide, or any combination thereof.

[0142] Example 45: The method of any of Examples 25-44, wherein the pattern of features is etched partially into the thickness of the underlying layer.

[0143] Example 46: The method of any of Examples 25-45, wherein partially etching the bottom layer further comprises: exposing the bottom layer to a carbon fluorine etchant and a processing gas.

[0144] Example 47: The method of Example 46, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the process gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0145] Example 48: The method of any of Examples 25-47, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

[0146] Example 49: The method of any of Examples 25-48, wherein the carbon hard mask layer is a patterned layer.

[0147] Example 50: The method of any of Examples 25-49, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm.

[0148] Example 51: The method of any of Examples 25-50, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0149] Example 52: The method of any of Examples 25-51, wherein the patterned layer comprises features having an aspect ratio of about 20 to about 500.

[0150] Example 53: The method of any of Examples 25-52, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the aluminum oxide coating is disposed on the inner surface having the polar functional groups.

[0151] Example 54: The method according to Example 53, wherein the polar functional group includes a CH group, a CO group, a C=O group, or any combination thereof.

[0152] Example 55: The method of any of Examples 25-54, wherein the carbon hard mask layer is deposited by a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin coating process.

[0153] Example 56: The method of any of Examples 25-55, wherein the carbon hard mask layer comprises about 30 atomic percent (at %) to about 80 at % carbon, about 10 at % to about 50 at % hydrogen, and about 10 at % to about 20 at % oxygen.

[0154] Example 57: The method of any of Examples 25-56, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0155] Example 58: The method of any of Examples 25-57, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0156] Example 59: The method of any of Examples 25-58, wherein the bottom layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof.

[0157] Example 60: The method of any of Examples 25-59, wherein the bottom layer comprises a stack disposed on or over the substrate.

[0158] Example 61: The method of Example 60, wherein the stack comprises alternating silicon oxide layers and silicon nitride layers.

[0159] Example 62: A method of forming a device, comprising: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have a feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; depositing a carbon hard mask layer at least into the feature pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the silicon-containing hard mask to produce a reverse pattern within the aluminum oxide carbon hybrid hard mask.

[0160] Example 63: A method according to Example 62, wherein the SIS treatment includes one or more infiltration cycles, and each of the infiltration cycles includes: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores included in the carbon hard mask layer; purging the treatment area to remove gaseous residues including the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores included in the carbon hard mask layer to produce an aluminum oxide coating disposed on an inner surface of the carbon hard mask layer; and purging the treatment area to remove gaseous residues including the oxidant.

[0161] Example 64: The method of Example 62 or 63, wherein the aluminum precursor comprises an alkyl aluminum compound.

[0162] Example 65: The method of any one of Examples 62-64, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

[0163] Example 66: The method of any of Examples 62-65, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0164] Example 67: The method of any one of Examples 62-66, wherein during the SIS treatment, the infiltration cycle is repeated 2 to about 50 times.

[0165] Example 68: The method of any of Examples 62-67, wherein during SIS processing, a processing region of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr.

[0166] Example 69: The method of any of Examples 62-68, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the aluminum precursor.

[0167] Example 70: The method of any of Examples 62-69, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including an aluminum precursor.

[0168] Example 71: The method of any of Examples 62-70, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the oxidant.

[0169] Example 72: The method of any of Examples 62-71, wherein during each of the permeation cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including an oxidant.

[0170] Example 73: The method of any of Examples 62-72, wherein the patterned photoresist layer is produced by an extreme ultraviolet (EUV) lithography process or a deep ultraviolet (DUV) lithography process.

[0171] Example 74: The method of any of Examples 62-73, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, dopants thereof, or any combination thereof.

[0172] Example 75: The method of any of Examples 62-74, wherein the device is a memory device, a logic device, or a microelectronic device.

[0173] Example 76: The method of any of Examples 62-75, wherein the pattern of features is etched completely through the thickness of the silicon-containing hard mask.

[0174] Example 77: The method of any of Examples 62-76, wherein etching the silicon-containing hard mask further comprises exposing the silicon-containing hard mask to a carbon-fluorine etchant and a processing gas.

[0175] Example 78: The method of Example 77, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the process gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0176] Example 79: The method of any of Examples 62-78, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises exposing the patterned photoresist layer to an etching process.

[0177] Example 80: The method of Example 79, wherein the etching process comprises exposing the patterned photoresist layer to a halogen-containing compound and oxygen (O 2 ), argon, helium, or a combination thereof.

[0178] Example 81: The method according to Example 80, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof.

[0179] Example 82: The method of any of Examples 62-81, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises exposing the patterned photoresist layer to a polishing process.

[0180] Example 83: The method of Example 82, wherein the polishing process comprises a chemical mechanical polishing (CMP) process.

[0181] Example 84: The method of any of Examples 62-83, further comprising: depositing a carbon hard mask layer onto an upper surface of the patterned photoresist layer while depositing the carbon hard mask layer into the features of the patterned photoresist layer.

[0182] Example 85: The method of Example 84, further comprising: removing the carbon hard mask layer from the upper surface of the patterned photoresist layer before processing the carbon hard mask layer using the SIS process.

[0183] Example 86: The method of Example 85, wherein removing the carbon hard mask layer from the upper surface of the patterned photoresist layer comprises a polishing process.

[0184] Example 87: The method of any of Examples 62-86, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

[0185] Example 88: The method of any of Examples 62-87, wherein the carbon hard mask layer is a patterned layer.

[0186] Example 89: The method of Example 88, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm.

[0187] Example 90: The method of Example 88 or 89, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0188] Example 91 The method of any of Examples 88-90, wherein the patterned layer comprises features having an aspect ratio of about 20 to about 500.

[0189] Example 92: The method of any of Examples 62-91, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the aluminum oxide coating is disposed on the inner surface having the polar functional groups.

[0190] Example 93: The method according to Example 92, wherein the polar functional group includes a CH group, a CO group, a C=O group, or any combination thereof.

[0191] Example 94: The method of any of Examples 62-93, wherein the carbon hard mask layer is deposited by a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin coating process.

[0192] Example 95: The method of any of Examples 62-94, wherein the carbon hard mask layer comprises about 30 atomic percent (at %) to about 80 at % carbon, about 10 at % to about 50 at % hydrogen, and about 10 at % to about 20 at % oxygen.

[0193] Example 96: The method of any of Examples 62-95, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0194] Example 97: The method of any of Examples 62-96, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0195] Example 98: The method of any of Examples 62-97, wherein etching the silicon-containing hard mask to produce an inverse pattern within the aluminum oxide carbon hybrid hard mask further comprises: exposing the workpiece to an inductively coupled plasma (ICP) to remove the silicon-containing hard mask while maintaining the aluminum oxide carbon hybrid hard mask on the metal or metal nitride layer.

[0196] Example 99: The method of Example 98, wherein the ICP comprises oxygen (O 2 ) and argon mixture.

[0197] Example 100: The method of any one of Examples 62-99, wherein etching the silicon-containing hard mask to produce a reverse pattern within the aluminum oxide carbon hybrid hard mask further comprises: exposing the workpiece to a selective removal process or a wet etching process to remove the silicon-containing hard mask while maintaining the aluminum oxide carbon hybrid hard mask on the metal or metal nitride layer.

[0198] Example 101: The method of any of Examples 62-100, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof.

[0199] Example 102: The method of any of Examples 62-101, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof.

[0200] Example 103: A method of forming a device, comprising: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; and a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; depositing a carbon hard mask layer into the feature pattern of the patterned photoresist layer and onto an upper surface of the patterned photoresist layer; A method of manufacturing a carbon hard mask layer for coating a workpiece comprising depositing a photoresistance reflective coating (PR-ARC) layer on a first portion of the layer while exposing a second portion of the carbon hard mask layer; etching the second portion of the carbon hard mask layer during a first mask etching process while maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece; etching the PR-ARC layer during a second mask etching process while maintaining the first portion of the carbon hard mask layer on the workpiece; and processing the first portion of the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hard mask that is denser than the carbon hard mask layer.

[0201] Example 104: A method according to Example 103, wherein the SIS treatment includes one or more infiltration cycles, and each of the infiltration cycles includes: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores included in the carbon hard mask layer; purging the treatment area to remove gaseous residues including the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores included in the carbon hard mask layer to produce an aluminum oxide coating disposed on an inner surface of the carbon hard mask layer; and purging the treatment area to remove gaseous residues including the oxidant.

[0202] Example 105: The method of Example 103 or 104, wherein the aluminum precursor comprises an alkyl aluminum compound.

[0203] Example 106: The method of any one of Examples 103-105, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

[0204] Example 107. The method of any of Examples 103-106, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0205] Example 108: The method of any one of Examples 103-107, wherein during the SIS treatment, the infiltration cycle is repeated 2 to about 50 times.

[0206] Example 109: The method of any of Examples 103-108, wherein during SIS processing, a processing region of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr.

[0207] Example 110: The method of any of Examples 103-109, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the aluminum precursor.

[0208] Example 111: The method of any of Examples 103-110, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including an aluminum precursor.

[0209] Example 112: The method of any of Examples 103-111, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while the carbon hard mask layer is infiltrated with the oxidant.

[0210] Example 113: The method of any of Examples 103-112, wherein during each of the permeation cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues including an oxidant.

[0211] Example 114: The method of any of Examples 103-113, wherein the patterned photoresist layer is produced by an extreme ultraviolet (EUV) lithography process or a deep ultraviolet (DUV) lithography process.

[0212] Example 115: The method of any of Examples 103-114, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, dopants thereof, or any combination thereof.

[0213] Example 116: The method of any of Examples 103-115, wherein the device is a memory device, a logic device, or a microelectronic device.

[0214] Example 117: The method of any of Examples 103-116, wherein the pattern of features is etched completely through the thickness of the silicon-containing hard mask.

[0215] Example 118: The method of any of Examples 103-117, wherein etching the silicon-containing hard mask further comprises exposing the silicon-containing hard mask to a carbon fluorine etchant and a process gas.

[0216] Example 119: The method of Example 118, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the process gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0217] Example 120 The method of any of Examples 103-119, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises exposing the patterned photoresist layer to an etching process.

[0218] Example 121: The method of Example 120, wherein the etching process comprises exposing the patterned photoresist layer to a halogen-containing compound and oxygen (O 2 ), argon, helium, or a combination thereof.

[0219] Example 122: The method according to Example 121, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof.

[0220] Example 123: The method of any of Examples 103-122, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises exposing the patterned photoresist layer to a polishing process.

[0221] Example 124: The method of Example 123, wherein the polishing process comprises a chemical mechanical polishing (CMP) process.

[0222] Example 125: The method of any of Examples 103-124, wherein the first mask etch process comprises exposing the workpiece to an inductively coupled plasma (ICP) while removing the second portion of the carbon hard mask layer and maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece.

[0223] Example 126: The method of Example 125, wherein the ICP comprises oxygen (O 2 ) and argon mixture.

[0224] Example 127: The method of any of Examples 103-126, wherein the second mask etch process includes exposing the workpiece to a selective removal process or a wet etch process to remove the PR-ARC layer while maintaining the first portion of the carbon hard mask layer on the workpiece.

[0225] Example 128: The method of any of Examples 103-127, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

[0226] Example 129: The method of any of Examples 103-128, wherein the carbon hard mask layer is a patterned layer.

[0227] Example 130: The method of Example 129, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm.

[0228] Example 131: The method of Example 129 or 130, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0229] Example 132: The method of any of Examples 129-131, wherein the patterned layer comprises features having an aspect ratio of about 20 to about 500.

[0230] Example 133: The method of any of Examples 103-132, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the aluminum oxide coating is disposed on the inner surface having the polar functional groups.

[0231] Example 134: The method according to Example 133, wherein the polar functional group includes a CH group, a CO group, a C=O group, or any combination thereof.

[0232] Example 135: The method of any of Examples 103-134, wherein the carbon hard mask layer is deposited by a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin coating process.

[0233] Example 136: The method of any of Examples 103-135, wherein the carbon hard mask layer comprises about 30 atomic percent (at %) to about 80 at % carbon, about 10 at % to about 50 at % hydrogen, and about 10 at % to about 20 at % oxygen.

[0234] Example 137: The method of any of Examples 103-136, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0235] Example 138: The method of any of Examples 103-137, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0236] Example 139: The method of any of Examples 103-138, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof.

[0237] Example 140 The method of any of Examples 103-139, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof.

[0238] Example 141: The method of any of Examples 103-140, wherein the PR-ARC layer is produced by extreme ultraviolet (EUV) lithography processing.

[0239] Example 142: The method of any of Examples 103-141, wherein the PR-ARC layer comprises a photoresist layer, a bottom antireflective coating (BARC) layer, and a dielectric antireflective coating (DARC) layer.

[0240] Example 143: The method of any of Examples 103-142, wherein the PR-ARC layer comprises a photoresist layer and a silicon-containing antireflective coating (SiARC) layer.

[0241] Example 144: A workpiece and / or device prepared, constructed, processed, or otherwise manufactured by any of Examples 1-143 and / or any of the accompanying drawings.

[0242] Example 145: A workpiece and / or device comprising: an underlayer disposed on a substrate; and an aluminum oxide carbon hybrid hard mask disposed on the underlayer, wherein the aluminum oxide carbon hybrid hard mask comprises features.

[0243] Example 146: The workpiece and / or device of Example 145, wherein the aluminum oxide carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm.

[0244] Example 147: The workpiece and / or device of Example 145 or 146, wherein the aluminum oxide carbon hybrid hard mask comprises features having a height of about 1 μm to about 20 μm.

[0245] Example 148: The workpiece and / or device of any of Examples 145-147, wherein the aluminum oxide carbon hybrid hard mask comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0246] Example 149: A workpiece and / or device according to any of Examples 145-148, wherein the features have an aspect ratio of about 20 to about 500.

[0247] Example 150 The workpiece and / or device of any of Examples 145-149, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0248] Example 151 The workpiece and / or device of any of Examples 145-150, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0249] Example 152: The workpiece and / or device of any of Examples 145-151, wherein the bottom layer comprises a metal oxide, a metal nitride, a silicon oxide, a silicon nitride, a silicon oxynitride, a dopant thereof, or any combination thereof.

[0250] Example 153: A workpiece and / or device according to any of Examples 145-152, wherein the bottom layer includes a stack disposed on or above a substrate.

[0251] Example 154: The workpiece and / or device of Example 153, wherein the stack comprises alternating silicon oxide layers and silicon nitride layers.

[0252] Example 155: A workpiece and / or device, comprising: a bottom layer disposed on a substrate; an aluminum oxide carbon hybrid hard mask disposed on the bottom layer; a silicon-containing hard mask disposed on the aluminum oxide carbon hybrid hard mask; and a patterned photoresist (PR) layer disposed on the silicon-containing hard mask, wherein features extend at least through the aluminum oxide carbon hybrid hard mask, the silicon-containing hard mask, and the patterned PR layer.

[0253] Example 156: A workpiece and / or device according to Example 155, wherein the feature extends into at least a portion of the underlying layer.

[0254] Example 157: The workpiece and / or device of Example 155 or 156, wherein the aluminum oxide carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm.

[0255] Example 158: A workpiece and / or device according to any of Examples 155-157, wherein the features have a height of about 1 μm to about 20 μm.

[0256] Example 159: A workpiece and / or device according to any of Examples 155-158, wherein features are separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0257] Example 160: A workpiece and / or device according to any of Examples 155-159, wherein the features have an aspect ratio of about 20 to about 500.

[0258] Example 161 The workpiece and / or device of any of Examples 155-160, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0259] Example 162: The workpiece and / or device of any of Examples 155-161, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0260] Example 163: A workpiece and / or device according to any of Examples 155-162, wherein the bottom layer comprises a metal oxide, a metal nitride, a silicon oxide, a silicon nitride, a silicon oxynitride, a dopant thereof, or any combination thereof.

[0261] Example 164: A workpiece and / or device according to any of Examples 155-163, wherein the bottom layer includes a stack disposed on or above a substrate.

[0262] Example 165: The workpiece and / or device of Example 164, wherein the stack comprises alternating silicon oxide layers and silicon nitride layers.

[0263] Example 166: A workpiece and / or device comprising: a metal or metal nitride layer disposed on a substrate; and an aluminum oxide carbon hybrid hard mask disposed on the metal or metal nitride layer, wherein the aluminum oxide carbon hybrid hard mask comprises features.

[0264] Example 167: The workpiece and / or device of Example 166, wherein the aluminum oxide carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm.

[0265] Example 168: The workpiece and / or device of Example 166 or 167, wherein the aluminum oxide carbon hybrid hard mask comprises features having a height of about 1 μm to about 20 μm.

[0266] Example 169: A workpiece and / or device according to any of Examples 166-168, wherein the aluminum oxide carbon hybrid hard mask includes features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0267] Example 170: A workpiece and / or device according to any of Examples 166-169, wherein the features have an aspect ratio of about 20 to about 500.

[0268] Example 171 The workpiece and / or device of any of Examples 166-170, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0269] Example 172 The workpiece and / or device of any of Examples 166-171, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0270] Example 173: The workpiece and / or device of any of Examples 166-172, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof.

[0271] Example 174: A workpiece and / or device according to any of Examples 166-173, wherein the metal or metal nitride layer includes a metal nitride layer, and wherein the metal nitride layer includes an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof.

[0272] Example 175: A workpiece and / or device comprising: a metal or metal nitride layer disposed on a substrate; a silicon-containing hard mask disposed on the metal or metal nitride layer; and an aluminum oxide carbon hybrid hard mask disposed on the silicon-containing hard mask layer and the metal or metal nitride layer, wherein the aluminum oxide carbon hybrid hard mask comprises features.

[0273] Example 176: The workpiece and / or device of Example 175, wherein the aluminum oxide carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm.

[0274] Example 177: The workpiece and / or device of Example 175 or 176, wherein the aluminum oxide carbon hybrid hard mask comprises features having a height of about 1 μm to about 20 μm.

[0275] Example 178: A workpiece and / or device according to any of Examples 175-177, wherein the aluminum oxide carbon hybrid hard mask includes features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0276] Example 179: A workpiece and / or device according to any of Examples 175-178, wherein the features have an aspect ratio of about 20 to about 500.

[0277] Example 180 The workpiece and / or device of any of Examples 175-179, wherein the aluminum oxide carbon hybrid hard mask comprises about 5 at % to about 20 at % aluminum and about 5 at % to about 30 at % oxygen.

[0278] Example 181 The workpiece and / or device of any of Examples 175-180, wherein the aluminum oxide carbon hybrid hard mask further comprises about 50 at % to about 90 at % carbon.

[0279] Example 182: The workpiece and / or device of any of Examples 175-181, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof.

[0280] Example 183: A workpiece and / or device according to any of Examples 175-182, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof.

[0281] Example 184 The workpiece and / or device of any of Examples 175-183, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, dopants thereof, or any combination thereof.

[0282] Example 185: A workpiece and / or device according to any of Examples 144-184, wherein the device is a memory device, a logic device, or a microelectronic device.

[0283] Although the foregoing relates to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims. All documents described herein are incorporated herein by reference, including any priority documents and / or testing procedures that are not inconsistent with this document. It can be seen from the previous general description and specific embodiments that although the form of the present disclosure has been illustrated and described, various modifications can be made without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure is not intended to be limited. Similarly, for patent law purposes, the term "comprising" is considered to be synonymous with the term "including". Similarly, when there is a transitional term "comprising" in front of a composition, element, or group of elements, it should be understood that there is a transitional term "essentially composed of", "consisting of", "selected from a group consisting of", or "for" in front of the record of the composition, element, or group of elements, and vice versa. As used herein, the term "about" refers to a change of + / -10% from the nominal value. It should be understood that such a change can be included in any value provided herein.

[0284] Certain embodiments and features have been described using a set of numerical upper limits and a set of numerical lower limits. It should be understood that, unless otherwise indicated, ranges include any combination of two values ​​(e.g., any combination of a lower value with any higher value, any combination of two lower values, and / or any combination of two higher values). Certain lower limits, upper limits, and ranges appear in one or more claims below.

Claims

1. A method of forming a device, the method comprising: Positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises: A metal or metal nitride layer disposed on or above a substrate; A silicon-containing hard mask disposed on or above the metal or metal nitride layer ； And A patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; Etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; Removing the patterned photoresist layer from the silicon-containing hard mask; Depositing a carbon hard mask layer at least into the feature pattern of the patterned photoresist layer; Processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; And Etching the silicon-containing hard mask to produce a reverse pattern within the alumina-carbon hybrid hard mask.

2. The method of claim 1, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: Exposing the carbon hard mask layer to an aluminum precursor; Using the aluminum precursor to infiltrate the carbon hard mask layer through pores contained within the carbon hard mask layer; Purifying the processing region to remove gaseous residues containing the aluminum precursor; Exposing the carbon hard mask layer to an oxidant; Using the oxidant to infiltrate the carbon hard mask layer through pores contained within the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; And Purifying the processing region to remove gaseous residues containing the oxidant.

3. The method of claim 2, Wherein: The aluminum precursor comprises an alkyl aluminum compound; The oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof; and During the SIS process, the infiltration cycle is repeated 2 to about 50 times.

4. The method of claim 2, Wherein: During the SIS process, the processing region of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr; During each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor; During each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purifying the processing region to remove the gaseous residues containing the aluminum precursor; During each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant; And During each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purifying the processing region to remove the gaseous residues containing the oxidant.

5. The method according to claim 1, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises: exposing the patterned photoresist layer to an etching process, and the etching process comprises exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O 2 ), argon, helium, or a combination thereof, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof.

6. The method of claim 1, the method further comprising: Deposit the carbon hard mask layer onto the upper surface of the patterned photoresist layer while depositing the carbon hard mask layer into the feature pattern of the patterned photoresist layer; and Remove the carbon hard mask layer from the upper surface of the patterned photoresist layer before processing the carbon hard mask layer using the SIS process, wherein removing the carbon hard mask layer from the upper surface of the patterned photoresist layer includes a polishing process.

7. The method according to claim 1, wherein: the carbon hard mask layer has a thickness of about 1 μm to about 20 μm; the carbon hard mask layer is a patterning layer; the patterning layer includes features having a height of about 1 μm to about 20 μm; the patterning layer includes features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm; and the patterning layer includes features having an aspect ratio of about 20 to about 500.

8. The method according to claim 1, wherein: the carbon hard mask layer includes a carbon-containing material having polar functional groups; the alumina coating is provided on the inner surface having the polar functional groups; and the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof.

9. The method according to claim 1, wherein the carbon hard mask layer includes about 30 atomic percent (at%) to about 80 at% of carbon, about 10 at% to about 50 at% of hydrogen, and about 10 at% to about 20 at% of oxygen; and wherein the alumina-carbon hybrid hard mask includes about 5 at% to about 20 at% of aluminum, about 5 at% to about 30 at% of oxygen, and about 50 at% to about 90 at% of carbon.

10. The method according to claim 1, wherein etching the silicon-containing hard mask to generate the opposite pattern within the alumina-carbon hybrid hard mask further comprises: exposing the workpiece to inductively coupled plasma (ICP) to remove the silicon-containing hard mask while maintaining the alumina-carbon hybrid hard mask on the metal or metal nitride layer, wherein the ICP comprises a mixture of oxygen (O 2 ), and argon.

11. A method of forming a device, the method comprising: Position a workpiece within a processing region of a processing chamber, wherein the workpiece includes: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer ； and a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; Etch the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; Remove the patterned photoresist layer from the silicon-containing hard mask; Deposit a carbon hard mask layer into the feature pattern of the patterned photoresist layer and onto the upper surface of the patterned photoresist layer; Deposit a photoresist anti-reflective coating (PR-ARC) layer on a first portion of the carbon hard mask layer while exposing a second portion of the carbon hard mask layer; During a first mask etching process, etch the second portion of the carbon hard mask layer while maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece; During a second mask etching process, etch the PR-ARC layer while maintaining the first portion of the carbon hard mask layer on the workpiece; and Process the first portion of the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer.

12. The method according to claim 11, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: Exposing the carbon hard mask layer to an aluminum precursor; Infiltrating the carbon hard mask layer through pores contained in the carbon hard mask layer with the aluminum precursor; Purifying the processing area to remove gaseous residues containing the aluminum precursor; Exposing the carbon hard mask layer to an oxidant; Infiltrating the carbon hard mask layer through pores contained in the carbon hard mask layer with the oxidant to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; And Purifying the processing area to remove gaseous residues containing the oxidant.

13. The method according to claim 12, Wherein: The aluminum precursor comprises an alkylaluminum compound; The oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof; and During the SIS process, the infiltration cycle is repeated 2 to about 50 times.

14. The method according to claim 12, Wherein: During the SIS process, the processing area of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr; During each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor; During each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purifying the processing area to remove the gaseous residues containing the aluminum precursor; During each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant; And During each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purifying the processing area to remove the gaseous residues containing the oxidant.

15. The method according to claim 11, wherein etching the silicon-containing hard mask further comprises: exposing the silicon-containing hard mask to a carbon fluoride etchant and a process gas, and wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the process gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

16. The method according to claim 11, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises: exposing the patterned photoresist layer to an etching process, and the etching process comprises exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O 2 ), argon, helium, or a combination thereof, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof.

17. The method according to claim 11, wherein the first mask etching process comprises exposing the workpiece to an inductively coupled plasma (ICP) while removing the second portion of the carbon hard mask layer and maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece, wherein the ICP comprises a mixture of oxygen (O 2 ) and argon.

18. The method according to claim 11, Wherein: The carbon hard mask layer has a thickness of about 1 μm to about 20 μm; The carbon hard mask layer is a patterned layer; The patterned layer comprises features having a height of about 1 μm to about 20 μm; The patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm; and The patterned layer comprises features having an aspect ratio of about 20 to about 500.

19. The method according to claim 11, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is disposed on the inner surface having the polar functional groups, and wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof.

20. The method according to claim 11, wherein the carbon hard mask layer comprises from about 30 atomic percent (at%) to about 80 at% carbon, from about 10 at% to about 50 at% hydrogen, and from about 10 at% to about 20 at% oxygen, and wherein the alumina carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum, from about 5 at% to about 30 at% oxygen, and the alumina carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

Images