Alumina carbon hybrid hard mask and method of making same

Abstract

Embodiments of the present disclosure generally relate to methods for enhancing carbon hard masks with improved etch selectivity and profile control. In some embodiments, a method of processing a carbon hard mask layer is provided, the method comprising: positioning a workpiece within a processing region of a processing chamber, where the workpiece has a carbon hard mask layer disposed on or above an underlying layer; and processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina carbon hybrid hard mask that is denser than the carbon hard mask layer. The SIS treatment includes exposing and infiltrating the carbon hard mask layer with an aluminum precursor, purging to remove gaseous residues, exposing and infiltrating the carbon hard mask layer with an oxidizing agent to produce an alumina coating disposed on an inner surface of the carbon hard mask layer, and purging the treatment region to remove gaseous residues.

Description

Technical Field

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 419,589, filed Oct. 26, 2022, the content of which is incorporated herein by reference in its entirety.

[0002] Embodiments of the present disclosure generally relate to photoresist technology, and more particularly to methods for enhancing photoresists to have improved etch selectivity and profile control. Background Art

[0003] Integrated circuits have evolved into complex devices that can include millions of components (e.g., transistors, capacitors, and resistors) on a single chip. Lithography can be used to form components on a chip. Generally, the lithography process involves forming a photoresist layer on a substrate. The photoresist layer can be formed, for example, by spin coating. The photoresist layer can include a resist resin and a photoacid generator. When exposed to electromagnetic radiation during a subsequent exposure stage, the photoacid generator changes the solubility of the photoresist in a development process. The electromagnetic radiation can have any suitable wavelength (e.g., a wavelength in the extreme ultraviolet region) and can come from any suitable source (e.g., a 193 nm ArF laser, an electron beam, an ion beam, or other source). Then, excess solvent can be removed in a pre-exposure bake process.

[0004] During the exposure stage, a photomask or reticle can be used to selectively expose certain regions of the photoresist layer disposed on the substrate to electromagnetic radiation. Other exposure methods can be maskless exposure methods. Exposure to light may decompose the photoacid generator, generating an acid and resulting in a latent acid image in the resist resin. After exposure, the substrate can be heated in a post-exposure bake process. During the post-exposure bake process, the acid generated by the photoacid generator reacts with the resist resin in the photoresist layer, changing the solubility of the resist in the photoresist layer during a subsequent development process.

[0005] After the post-exposure bake, the substrate and the photoresist layer are developed and rinsed. Subsequently, a patterned photoresist layer is formed on the substrate. After the development and rinse process, openings are defined within the patterned photoresist layer to expose underlying target material for etching to transfer features to the target material. Factors (e.g., imprecise control or low resolution of the lithography exposure process, or elasticity of the patterned layer) may result in poor critical dimensions of the patterned photoresist layer, leading to unacceptable line width roughness (LWR). A large line width roughness (LWR) of the patterned photoresist layer may result in imprecise feature transfer to the target material, ultimately leading to premature device failure and yield loss.

[0006] A carbon-based hard mask is a specific type of photoresist material used in the industry. However, existing carbon-based hard mask materials have limited etch selectivity between the PR layer and the corresponding underlying layer. The carbon-based hard mask has limited etch resistance and usually deteriorates or is damaged slightly during the etching process. In addition, existing carbon-based hard mask materials have pattern transfer defects and moderate line edge roughness (LER) and line width roughness (LWR).

[0007] Therefore, there is a need for an improved carbon-based hard mask that overcomes these drawbacks and a method for preparing such a carbon-based hard mask. Summary of the Invention

[0008] Embodiments of the present disclosure generally relate to a hard mask having improved etch selectivity and profile control and a method for preparing the hard mask. The hard mask is an alumina-carbon hybrid hard mask that can be prepared from a carbon hard mask. For example, the carbon hard mask layer can be processed by sequential infiltration synthesis (SIS) treatment to fabricate or otherwise produce an alumina-carbon hybrid hard mask.

[0009] In one or more embodiments, a method for processing a carbon hard mask layer is provided. The method includes: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece has a carbon hard mask layer disposed on or above a bottom layer; and processing the carbon hard mask layer by exposing the workpiece to SIS treatment to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer. The SIS treatment includes one or more infiltration cycles, and each of the infiltration cycles includes: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purifying the processing region to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purifying the processing region to remove gaseous residues containing the oxidant.

[0010] In other embodiments, a method for forming a device is provided. The method includes: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece includes a carbon hard mask layer disposed on or above a bottom layer, a silicon-containing hard mask disposed on or above the carbon hard mask layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method also includes: etching the silicon-containing hard mask and the carbon hard mask layer to each have the feature pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to SIS treatment to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the bottom layer to have the feature pattern of the patterned photoresist layer.

[0011] In some embodiments, a method of forming a device is provided. The method includes: positioning a workpiece within a processing region of a processing chamber, where the workpiece includes a metal or metal nitride layer disposed on or above a substrate, a silicon-containing hard mask disposed on or above the metal or metal nitride layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method further includes: etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; and depositing a carbon hard mask layer at least into the feature pattern of the patterned photoresist layer. The method also includes: processing the carbon hard mask layer by exposing the workpiece to an SIS process to produce a carbon-aluminum oxide hybrid hard mask that is denser than the carbon hard mask layer; and etching the silicon-containing hard mask to produce an opposite pattern within the carbon-aluminum oxide hybrid hard mask.

[0012] In other embodiments, a method of forming a device is provided. The method includes: positioning a workpiece within a processing region of a processing chamber, where the workpiece includes a metal or metal nitride layer disposed on or above a substrate, a silicon-containing hard mask disposed on or above the metal or metal nitride layer, and a patterned photoresist layer having a feature pattern disposed on the silicon-containing hard mask. The method also includes: etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; and depositing a carbon hard mask layer into the feature pattern of the patterned photoresist layer and onto the upper surface of the patterned photoresist layer. The method further includes: depositing a photoresist anti-reflective coating (PR-ARC) layer on a first portion of the carbon hard mask layer while leaving a second portion of the carbon hard mask layer exposed. Additionally, the method includes: etching the second portion of the carbon hard mask layer during a first mask etching process while maintaining the PR-ARC layer and the first portion of the carbon hard mask layer on the workpiece; and etching the PR-ARC layer during a second mask etching process while maintaining the first portion of the carbon hard mask layer on the workpiece. The method further includes: processing the first portion of the carbon hard mask layer by exposing the workpiece to an SIS process to produce a carbon-aluminum oxide hybrid hard mask that is denser than the carbon hard mask layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] To make the foregoing features of the present disclosure understandable in detail, a more specific description of the present disclosure (briefly summarized above) may be obtained with reference to the embodiments, some of which are illustrated in the drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and are thus not considered to limit its scope, and other equivalent embodiments may be adopted.

[0014] Figures 1A to 1C A cross-sectional view of a workpiece depicting different stages of a processing operation as described and discussed in one or more embodiments herein.

[0015] Figures 2A to 2DCross-sectional view of another workpiece at different stages of a process for fabricating or otherwise forming a device as described and discussed in one or more embodiments herein.

[0016] Figures 3A to 3F Cross-sectional view of another workpiece at different stages of a process for fabricating or otherwise forming a device as described and discussed in one or more embodiments herein.

[0017] Figures 4A to 4G Cross-sectional view of another workpiece at different stages of a process for fabricating or otherwise forming a device as described and discussed in one or more embodiments herein.

[0018] For purposes of facilitating understanding, like reference numerals are ascribed to like elements as far as possible in the various figures. It is contemplated that elements and features of one or more embodiments may be advantageously incorporated into other embodiments. Detailed Description

[0019] Embodiments of the present disclosure generally relate to hard masks having improved etch selectivity and profile control and methods for fabricating hard masks. The hard mask is an alumina-carbon hybrid hard mask that can be prepared from a carbon hard mask. In one or more embodiments, the carbon hard mask layer is processed by sequential infiltration synthesis (SIS) processing to fabricate or otherwise produce an alumina-carbon hybrid hard mask. The alumina-carbon hybrid hard mask is denser than the carbon hard mask layer used to form the alumina-carbon hybrid hard mask. The alumina-carbon hybrid hard mask can be used during the fabrication, manufacture, or preparation of various devices (e.g., memory devices, logic devices, various microelectronic devices, and other types of devices). A variety of workpieces or devices including the alumina-carbon hybrid hard mask can be fabricated, constructed, processed, or otherwise manufactured by the methods described and discussed herein.

[0020] Figures 1A to 1C Cross-sectional view of workpiece 100 at different stages of a processing operation (e.g., SIS processing) as described and discussed in one or more embodiments herein. The SIS processing is for producing a processed mask or patterned photoresist (PR) layer that is denser and harder than an unprocessed or original masked patterned PR layer. In one or more embodiments, a method of processing a carbon hard mask layer 110 is provided, and the method includes positioning workpiece 100 within a processing region of a processing chamber. As Figure 1A shown, workpiece 100 has a carbon hard mask layer 110 disposed on or above a bottom layer 104. As shown, bottom layer 104 can be formed, deposited, or otherwise disposed on any other layer (not shown) or substrate 102. The method includes processing carbon hard mask layer 110 by exposing workpiece 100 to SIS processing to produce an intermediate mask 118 (as Figure 1Bas shown), and then generate an alumina-carbon hybrid hard mask 120 (such as Figure 1C as shown). The alumina-carbon hybrid hard mask 120 is denser than the carbon hard mask layer 110.

[0021] In one or more instances, the SIS process includes one or more infiltration cycles, and each of the infiltration cycles includes sequentially exposing the carbon hard mask layer 110 to an aluminum precursor, infiltrating the carbon hard mask layer 110 with the aluminum precursor through pores contained in the aluminum precursor, and purifying the processing area to remove gaseous residues containing the aluminum precursor. At this stage, the carbon hard mask layer 110 begins to transform into an intermediate mask 118 having aluminum incorporated into and on the inner surface of the carbon hard mask layer 110. The SIS process further includes sequentially exposing the carbon hard mask layer 110 to an oxidant, infiltrating the carbon hard mask layer 110 with the oxidant through pores contained in the carbon hard mask layer 110 to produce an alumina coating disposed on the inner surface of the carbon hard mask layer 110, and purifying the processing area to remove gaseous residues containing the oxidant. In some embodiments, the processing includes a single infiltration cycle to process the carbon hard mask layer 110. In other embodiments, the infiltration cycle can be repeated multiple times (e.g., 2 to about 100 times or more) to process the carbon hard mask layer 110.

[0022] Depending on the application, the substrate 102 can be made of one or more materials (e.g., silicon, silicon oxide, doped silicon, silicon germanium, germanium, gallium arsenide, glass, sapphire) and any other materials (e.g., metals, metal nitrides, metal alloys, and other conductive or semiconductor materials), or include one or more materials and any other materials. The substrate 102 or its surface can also be made of a dielectric material (e.g., silicon dioxide, silicon nitride, organosilicate, and carbon-doped silicon oxide or silicon nitride materials). The substrate 102 can be of any geometry (e.g., circular, square, or rectangular). In some instances, the substrate 102 is circular and has a diameter of 200 mm, 250 mm, 300 mm, or 450 mm.

[0023] The underlying layer 104 can be or include an oxide layer or a silicon-containing layer (e.g., silicon oxide, amorphous silicon, tetraethyl orthosilicate (TEOS) layer, or a combination thereof). The underlying layer 104 can be formed or otherwise produced by chemical vapor deposition (CVD) or plasma-enhanced CVD (PECVD). In one or more embodiments, the underlying layer 104 can be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. In some embodiments, the underlying layer 104 can be or include a stack disposed on or above the substrate 102. In one or more instances, the stack includes alternating silicon oxide layers and silicon nitride layers.

[0024] In one or more embodiments, the carbon hard mask layer 110 can be or include carbon, amorphous carbon, spin-on carbon (SOC), its dopants, or any combination thereof. The carbon hard mask layer 110 can be formed, deposited, or otherwise produced by one or more processes such as, for example, a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin-on process. The carbon hard mask layer 110 can be or include a mask or other patterned layer developed, prepared, or otherwise produced by one or more processes. In some instances, the carbon hard mask layer 110 is prepared by a lithography process such as, for example, an extreme ultraviolet (EUV) lithography process. The carbon hard mask layer 110 is porous and can have pores throughout the material on all surfaces including the carbon hard mask layer 110. As Figure 1A shown, the carbon hard mask layer 110 has been formed but remains unprocessed with respect to the SIS process described herein.

[0025] In one or more embodiments, the thickness of the carbon hard mask layer 110 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As Figures 1A to 1C shown, the carbon hard mask layer 110 can be a patterned layer or include a patterned layer that contains a feature pattern of features 112. The height of the features 112 can be the same as or less than the thickness of the carbon hard mask layer 110. Thus, the height of the features 112 can range from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The features 112 of the patterned layer or the carbon hard mask layer 110 are separated by vias, gaps, or spaces that can have a width of about 5 nm to about 250 nm, from about 10 nm to about 150 nm, or from about 20 nm to about 100 nm. The features 112 can have an aspect ratio of about 20 to about 500, from about 30 to about 300, or from about 40 to about 200.

[0026] In one or more embodiments, the carbon hard mask layer 110 can be or include a carbon-containing material having polar functional groups such as, for example, one or more C-H groups, one or more C-O groups, one or more C=O groups, or any combination thereof. During the SIS process, the polar functional groups on the inner surface of the carbon hard mask layer 110 contribute to the formation and / or deposition of the alumina coating of the intermediate mask 118.

[0027] In some embodiments, the range of carbon contained in the carbon hard mask layer 110 can be from about 30 atomic percent (at%), about 40 at%, or about 50 at% to about 60 at%, about 70 at%, or about 80 at%. For example, the range of carbon contained in the carbon hard mask layer 110 can be about 30 at% to about 80 at%, about 40 at% to about 80 at%, about 50 at% to about 80 at%, about 60 at% to about 80 at%, about 70 at% to about 80 at%, about 30 at% to about 65 at%, about 40 at% to about 65 at%, about 50 at% to about 65 at%, about 60 at% to about 65 at%, about 30 at% to about 50 at%, about 40 at% to about 50 at%, or about 45 at% to about 50 at%.

[0028] The range of hydrogen contained in the carbon hard mask layer 110 can be from about 10 at%, about 15 at%, about 20 at%, or about 25 at% to about 30 at%, about 35 at%, about 40 at%, about 45 at%, or about 50 at%. For example, the range of hydrogen contained in the carbon hard mask layer 110 can be about 10 at% to about 50 at%, about 15 at% to about 50 at%, about 20 at% to about 50 at%, about 25 at% to about 50 at%, about 30 at% to about 50 at%, about 40 at% to about 50 at%, about 10 at% to about 40 at%, about 15 at% to about 40 at%, about 20 at% to about 40 at%, about 25 at% to about 40 at%, about 30 at% to about 40 at%, about 35 at% to about 40 at%, about 10 at% to about 30 at%, about 15 at% to about 30 at%, about 20 at% to about 30 at%, or about 25 at% to about 30 at%.

[0029] The range of oxygen contained in the carbon hard mask layer 110 can be from about 1 at%, about 2 at%, about 3 at%, about 3 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 16 at%, about 18 at%, or about 20 at%. For example, the range of oxygen contained in the carbon hard mask layer 110 can be about 1 at% to about 20 at%, about 2 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 1 at% to about 15 at%, about 2 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 15 at% to about 15 at%, about 18 at% to about 15 at%, about 1 at% to about 10 at%, about 2 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0030] In one or more instances, the carbon hard mask layer 110 can contain about 30 at% to about 80 at% carbon, about 10 at% to about 50 at% hydrogen, and about 10 at% to about 20 at% oxygen. In some instances, the carbon hard mask layer 110 can contain about 40 at% to about 60 at% carbon, about 20 at% to about 40 at% hydrogen, and about 12 at% to about 18 at% oxygen. In other instances, the carbon hard mask layer 110 can contain about 45 at% to about 55 at% carbon, about 25 at% to about 35 at% hydrogen, and about 14 at% to about 16 at% oxygen.

[0031] Figure 1B The figure shows a workpiece 100 with an intermediate mask 118. The intermediate mask 118 has an aluminum precursor or other metal precursor that is absorbed or otherwise incorporated into the inner surface of the carbon hard mask layer 110 and onto the inner surface of the carbon hard mask layer 110. The precursor coating or other means of infiltration coating is provided throughout the inner surface of the carbon hard mask layer 110. The aluminum or other metal precursor penetrates through the pores contained throughout the carbon hard mask layer 110. The infiltration coating involves absorbing and / or condensing an amount of the precursor (e.g., during the first processing section of the SIS process). Thereafter, during the second processing section of the SIS process, the processing area of the processing chamber can be purged to remove excess or residual precursor within the processing area.

[0032] Figure 1CFigure 100 shows a workpiece 100 having an alumina-carbon hybrid hard mask 120, which includes an alumina (or other metal oxide) coating formed within and on a carbon hard mask layer 110. During a third processing section of the SIS process, the infiltration coating is oxidized by exposure to an oxidant to form the oxide coating of the alumina-carbon hybrid hard mask 120. Thereafter, during a fourth processing section of the SIS process, the processing area of the processing chamber can be purged to remove excess or residual precursors within the processing area. Figure 1C The shown alumina-carbon hybrid hard mask 120 including the alumina coating is denser and harder than Figure 1A the shown carbon hard mask layer 110.

[0033] The alumina-carbon hybrid hard mask 120 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 120 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 120 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0034] The range of oxygen contained in the alumina-carbon hybrid hard mask 120 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 120 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0035] The range of carbon contained in the alumina-carbon hybrid hard mask 120 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 120 can be about 40 at% to about 90 at%, about 50 at% to about 90 at%, about 60 at% to about 90 at%, about 70 at% to about 90 at%, about 80 at% to about 90 at%, about 40 at% to about 75 at%, about 50 at% to about 75 at%, about 60 at% to about 75 at%, about 70 at% to about 75 at%, about 40 at% to about 60 at%, about 45 at% to about 60 at%, about 50 at% to about 60 at%, or about 55 at% to about 60 at%.

[0036] In one or more instances, the alumina-carbon hybrid hard mask 120 may include from about 5 at% to about 20 at% aluminum, from about 5 at% to about 30 at% oxygen, and from about 50 at% to about 90 at% carbon. In some instances, the alumina-carbon hybrid hard mask 120 may include from about 10 at% to about 20 at% aluminum, from about 10 at% to about 30 at% oxygen, and from about 50 at% to about 80 at% carbon. In one or more instances, the alumina-carbon hybrid hard mask 120 may include from about 5 at% to about 10 at% aluminum, from about 5 at% to about 20 at% oxygen, and from about 70 at% to about 90 at% carbon.

[0037] The thickness of the alumina-carbon hybrid hard mask 120 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As Figure 1C shown, the alumina-carbon hybrid hard mask 120 may be a patterned layer or include a patterned layer that includes a feature pattern of the feature 112. The height of the feature 112 may be the same as or less than the thickness of the alumina-carbon hybrid hard mask 120. Accordingly, the height of the feature 112 may range from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The features 112 of the patterned layer or the alumina-carbon hybrid hard mask 120 are separated by vias, gaps, or spaces that may have a width from about 5 nm to about 250 nm, from about 10 nm to about 150 nm, or from about 20 nm to about 100 nm. The feature 112 may have an aspect ratio from about 20 to about 500, from about 30 to about 300, or from about 40 to about 200.

[0038] Sequential Infiltration Synthesis (SIS) process

[0039] As Figures 1A to 1C shown, the SIS process described and discussed herein for preparing the alumina-carbon hybrid hard mask 120 from the carbon hard mask layer 110 may also be used to convert any carbon hard mask layer into an alumina-carbon hybrid hard mask (e.g., Figures 2A to 4G as shown).

[0040] In one or more instances, the SIS process includes: subjecting the carbon hard mask layer 110 to one or more infiltration cycles of an aluminum precursor (e.g., one or more aluminum precursors); infiltrating the carbon hard mask layer 110 with the precursor through pores included in the carbon hard mask layer 110; purging the processing area to remove gaseous residues containing the precursor; subjecting the carbon hard mask layer 110 to an oxidant; infiltrating the carbon hard mask layer 110 with the oxidant through pores included in the carbon hard mask layer 110 to produce an alumina coating disposed on an inner surface of the carbon hard mask layer 110; and purging the processing area to remove gaseous residues containing the oxidant.

[0041] Each of the permeation cycles in the SIS process includes a first treatment section that exposes and permeates through a precursor, a second treatment section that purifies the treatment area to remove residual gaseous precursor, a third treatment section that exposes and permeates through an oxidant, and a fourth treatment section that purifies the treatment area to remove residual gaseous precursor. During each of the permeation cycles, the treatment sections of the permeation cycle are repeated in sequence. During the first and third treatment sections of the SIS process, one or more carrier gases can flow into the treatment area together with the precursor and / or oxidant, respectively. During the second and fourth treatment sections of the SIS process, one or more purge gases can flow into the treatment area that is also evacuated. The carrier gas and the purge gas can be the same composition or different compositions. Exemplary carrier gases and / or purge gases can be or include argon, helium, neon, nitrogen (N 2 ), hydrogen (H 2 ), or any combination thereof.

[0042] The processing area of the processing chamber is for processing the internal volume within the processing chamber. During SIS processing, the processing area and / or the internal volume of the processing chamber is maintained at and / or adjusted to one or more pressures below atmospheric pressure or ambient pressure (e.g., less than 760 Torr). During SIS processing, the pressure of the processing area and / or the internal volume of the processing chamber is from about 0.01 Torr, about 0.1 Torr, about 1 Torr, about 1 Torr, about 5 Torr, about 10 Torr, about 15 Torr, about 20 Torr, about 25 Torr, about 35 Torr, or about 50 Torr to about 80 Torr, about 100 Torr, about 150 Torr, about 200 Torr, about 250 Torr, about 300 Torr, about 350 Torr, about 400 Torr, about 450 Torr, about 500 Torr, or about 600 Torr. For example, during SIS processing, the pressure of the processing area and / or the internal volume of the processing chamber is from about 0.01 Torr to about 600 Torr, about 0.01 Torr to about 500 Torr, about 0.01 Torr to about 400 Torr, about 0.01 Torr to about 350 Torr, about 0.01 Torr to about 300 Torr, about 0.01 Torr to about 250 Torr, about 0.01 Torr to about 200 Torr, about 0.01 Torr to about 150 Torr, about 0.01 Torr to about 100 Torr, about 0.01 Torr to about 50 Torr, about 0.1 Torr to about 600 Torr, about 0.1 Torr to about 500 Torr, about 0.1 Torr to about 400 Torr, about 0.1 Torr to about 350 Torr, about 0.1 Torr to about 300 Torr, about 0.1 Torr to about 250 Torr, about 0.1 Torr to about 200 Torr, about 0.1 Torr to about 150 Torr, about 0.1 Torr to about 100 Torr, about 0.from about 1 Torr to about 50 Torr, from about 1 Torr to about 600 Torr, from about 1 Torr to about 500 Torr, from about 1 Torr to about 400 Torr, from about 1 Torr to about 350 Torr, from about 1 Torr to about 300 Torr, from about 1 Torr to about 250 Torr, from about 1 Torr to about 200 Torr, from about 1 Torr to about 150 Torr, from about 1 Torr to about 100 Torr, from about 1 Torr to about 50 Torr, from about 10 Torr to about 600 Torr, from about 10 Torr to about 500 Torr, from about 10 Torr to about 400 Torr, from about 10 Torr to about 350 Torr, from about 10 Torr to about 300 Torr, from about 10 Torr to about 250 Torr, from about 10 Torr to about 200 Torr, from about 10 Torr to about 150 Torr, from about 10 Torr to about 100 Torr, from about 10 Torr to about 50 Torr, from about 15 Torr to about 600 Torr, from about 15 Torr to about 500 Torr, from about 15 Torr to about 400 Torr, from about 15 Torr to about 350 Torr, from about 15 Torr to about 300 Torr, from about 15 Torr to about 250 Torr, from about 15 Torr to about 200 Torr, from about 15 Torr to about 150 Torr, from about 15 Torr to about 100 Torr, from about 15 Torr to about 50 Torr, from about 50 Torr to about 600 Torr, from about 50 Torr to about 500 Torr, from about 50 Torr to about 400 Torr, from about 50 Torr to about 350 Torr, from about 50 Torr to about 300 Torr, from about 50 Torr to about 250 Torr, from about 50 Torr to about 200 Torr, from about 50 Torr to about 150 Torr, from about 50 Torr to about 100 Torr, from about 100 Torr to about 600 Torr, from about 100 Torr to about 500 Torr, from about 100 Torr to about 400 Torr, from about 100 Torr to about 350 Torr, from about 100 Torr to about 300 Torr, from about 100 Torr to about 250 Torr, from about 100 Torr to about 200 Torr, or from about 100 Torr to about 150 Torr. In one or more instances, during the SIS process, the pressure in the processing region and / or the internal volume of the processing chamber is from about 0.01 Torr to about 250 Torr, or from about 0.1 Torr to about 50 Torr.

[0043] During SIS processing, each of the first and third processing segments of the infiltration cycle can independently last from about 20 seconds, about 30 seconds, about 35 seconds, about 40 seconds, or about 45 seconds to about 50 seconds, about 60 seconds, about 70 seconds, about 80 seconds, about 90 seconds, about 100 seconds, about 2 minutes, about 2.5 minutes, about 3 minutes, about 4 minutes, about 5 minutes, about 6 minutes, about 8 minutes, about 10 minutes, about 12 minutes, about 15 minutes, about 18 minutes, or about 20 minutes. For example, during SIS processing, each of the first and third processing segments of the infiltration cycle can independently last from about 20 seconds to about 20 minutes, from about 20 seconds to about 15 minutes, from about 20 seconds to about 12 minutes, from about 20 seconds to about 10 minutes, from about 20 seconds to about 8 minutes, from about 20 seconds to about 6 minutes, from about 20 seconds to about 5 minutes, from about 20 seconds to about 4 minutes, from about 20 seconds to about 3 minutes, from about 20 seconds to about 2.5 minutes, from about 20 seconds to about 2 minutes, from about 20 seconds to about 100 seconds, from about 20 seconds to about 90 seconds, from about 20 seconds to about 75 seconds, from about 20 seconds to about 60 seconds, from about 20 seconds to about 45 seconds, from about 20 seconds to about 30 seconds, from about 40 seconds to about 5 minutes, from about 40 seconds to about 4 minutes, from about 40 seconds to about 3 minutes, from about 40 seconds to about 2.5 minutes, from about 40 seconds to about 2 minutes, from about 40 seconds to about 100 seconds, from about 40 seconds to about 90 seconds, from about 40 seconds to about 75 seconds, from about 40 seconds to about 60 seconds, from about 60 seconds to about 20 minutes, from about 60 seconds to about 15 minutes, from about 60 seconds to about 12 minutes, from about 60 seconds to about 10 minutes, from about 60 seconds to about 8 minutes, from about 60 seconds to about 6 minutes, from about 60 seconds to about 5 minutes, from about 60 seconds to about 4 minutes, from about 60 seconds to about 3 minutes, from about 60 seconds to about 2.5 minutes, from about 60 seconds to about 2 minutes, from about 60 seconds to about 100 seconds, from about 60 seconds to about 90 seconds, or from about 60 seconds to about 75 seconds.

[0044] In one or more instances, during the first processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to an aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer 110 with the aluminum precursor. In some instances, during the third processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to an oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer 110 with the oxidant.

[0045] During SIS processing, each of the second and fourth processing segments of the infiltration cycle can independently last for about 20 seconds, about 30 seconds, about 35 seconds, about 40 seconds, about 45 seconds, about 50 seconds, about 60 seconds, about 70 seconds, about 80 seconds, about 90 seconds, about 100 seconds, about 2 minutes, about 2.5 minutes, about 3 minutes, about 4 minutes, about 5 minutes, about 6 minutes, about 8 minutes, about 10 minutes, about 12 minutes, about 15 minutes, about 20 minutes, about 25 minutes, or about 30 minutes. For example, during SIS processing, each of the second and fourth processing segments of the infiltration cycle can independently last from about 20 seconds to about 30 minutes, from about 20 seconds to about 25 minutes, from about 20 seconds to about 20 minutes, from about 20 seconds to about 15 minutes, from about 20 seconds to about 12 minutes, from about 20 seconds to about 10 minutes, from about 20 seconds to about 8 minutes, from about 20 seconds to about 6 minutes, from about 20 seconds to about 5 minutes, from about 20 seconds to about 4 minutes, from about 20 seconds to about 3 minutes, from about 20 seconds to about 2.5 minutes, from about 20 seconds to about 2 minutes, from about 20 seconds to about 100 seconds, from about 20 seconds to about 90 seconds, from about 20 seconds to about 75 seconds, from about 20 seconds to about 60 seconds, from about 40 seconds to about 5 minutes, from about 40 seconds to about 4 minutes, from about 40 seconds to about 3 minutes, from about 40 seconds to about 2.5 minutes, from about 40 seconds to about 2 minutes, from about 40 seconds to about 100 seconds, from about 40 seconds to about 90 seconds, from about 40 seconds to about 75 seconds, from about 40 seconds to about 60 seconds, from about 60 seconds to about 20 minutes, from about 60 seconds to about 15 minutes, from about 60 seconds to about 12 minutes, from about 60 seconds to about 10 minutes, from about 60 seconds to about 8 minutes, from about 60 seconds to about 6 minutes, from about 60 seconds to about 5 minutes, from about 60 seconds to about 4 minutes, from about 60 seconds to about 3 minutes, from about 60 seconds to about 2.5 minutes, from about 60 seconds to about 2 minutes, from about 60 seconds to about 100 seconds, from about 60 seconds to about 90 seconds, or from about 60 seconds to about 75 seconds.

[0046] In one or more instances, during the second processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues containing aluminum precursors. In other instances, during the fourth processing segment of each infiltration cycle, the carbon hard mask layer 110 is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues containing oxidants.

[0047] During the SIS process, the infiltration cycle can be carried out once, twice, or multiple times. During each of the infiltration cycles, the processing sections of the infiltration cycle are sequentially repeated. In some instances, during the SIS process, the infiltration cycle repeats from 2, 3, 4, or 5 times to 6, 7, 8, 9, about 10, about 12, about 15, about 20, about 30, about 40, about 50, about 60, about 80, about 100, or more times. For example, during the SIS process, the infiltration cycle repeats 2 times to about 100 times, 2 times to about 80 times, 2 times to about 50 times, 2 times to about 20 times, 2 times to about 15 times, 2 times to about 10 times, 2 times to 8 times, 2 times to 5 times. In one or more instances, the SIS process includes 1 cycle to about 100 cycles, 5 cycles to about 80 cycles, about 10 cycles to about 50 cycles, or about 20 cycles to about 40 cycles of the infiltration cycle.

[0048] The precursor exposed to the carbon hard mask layer 110 can be one or more aluminum precursors or other metal precursors. The oxidant can be or include any compound or reagent that oxidizes the aluminum precursor to produce aluminum oxide or another metal precursor to produce the corresponding metal oxide. The oxidant can be or include water, ozone, oxygen plasma, oxygen radicals, oxygen (O 2 ), hydrogen peroxide, or any combination thereof.

[0049] In one or more embodiments, the precursor is one or more aluminum precursors or includes one or more aluminum precursors, and the oxide coating formed within the carbon hard mask layer 110 is aluminum oxide or includes aluminum oxide. The aluminum precursor can be or include one or more alkyl aluminum compounds, one or more alkoxy aluminum compounds, one or more aluminum halide compounds, aluminum hydride, or any combination thereof. In some instances, the aluminum precursor is trimethylaluminum, triethylaluminum, tripropylaluminum, tributylaluminum, dimethylaluminum, diethylaluminum, dipropylaluminum, dibutylaluminum, their complexes, or combinations thereof, or includes trimethylaluminum, triethylaluminum, tripropylaluminum, tributylaluminum, dimethylaluminum, diethylaluminum, dipropylaluminum, dibutylaluminum, their complexes, or combinations thereof.

[0050] In one or more instances, the aluminum precursor is one or more alkyl aluminum compounds (e.g., trimethylaluminum) or includes one or more alkyl aluminum compounds, and the oxidant is water, or includes water. In other instances, the aluminum precursor is one or more alkoxy aluminum compounds or includes one or more alkoxy aluminum compounds, and the oxidant is ozone or oxygen plasma or includes ozone or oxygen plasma.

[0051] Figures 2A to 2DCross-sectional view of workpiece 200 at different stages of a process for fabricating or otherwise forming a device, as described and discussed in one or more embodiments herein. The device may be or include a memory device, a logic device, a microelectronic device, and / or other devices. In one or more embodiments, a method for forming a device is provided, the method including: positioning workpiece 200 within a processing region of a processing chamber. Workpiece 200 includes a carbon hard mask layer 210 disposed on or above a bottom layer 204, a silicon-containing hard mask 230 disposed on or above carbon hard mask layer 210, and a patterned photoresist (PR) layer 240 having a feature pattern with features 242 disposed on silicon-containing hard mask 230. The method also includes: etching silicon-containing hard mask 230 and carbon hard mask layer 210 to each have features 242 of patterned PR layer 240; processing carbon hard mask layer 210 by exposing workpiece 200 to SIS processing to produce an alumina-carbon hybrid hard mask 220; and etching bottom layer 204 to have features 242 of patterned PR layer 240.

[0052] Bottom layer 204 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. Bottom layer 204 may be or include a stack disposed on or above substrate 202. In one or more instances, the stack includes alternating layers of silicon oxide and silicon nitride. Substrate 202 may be or include any type of substrate (including substrate 102 described and discussed above). In some instances, bottom layer 204 may be or include any type of one or more layers (including bottom layer 104 described and discussed above).

[0053] As Figure 2A shown, patterned PR layer 240 may be deposited, formed, positioned, or otherwise disposed on silicon-containing hard mask 230. In one or more embodiments, patterned PR layer 240 may be produced or otherwise formed by extreme ultraviolet (EUV) lithography processing or deep ultraviolet (DUV) lithography processing. In one or more instances, patterned PR layer 240 may be or include an EUV stack that includes a PR layer below a bottom anti-reflective coating (BARC) layer to provide a PR / BARC stack. In other instances, patterned PR layer 240 may be or include a DUV stack that includes a PR layer below a BARC layer below a dielectric anti-reflective coating (DARC) layer to provide a PR / BARC / DARC stack.

[0054] In some embodiments, as Figure 2BAs shown, feature 242 is etched completely through the thickness of the silicon-containing hard mask 230. The silicon-containing hard mask 230 can be or include silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. In one or more instances, the silicon-containing hard mask 230 can be etched or otherwise removed by exposing the silicon-containing hard mask 230 to one or more carbon fluoride etchants and one or more process gases. The carbon fluoride etchant can be or include tetrafluoromethane, trifluoromethane, difluoromethane, fluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The process gas can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0055] In some instances, as Figure 2B shown, feature 242 is etched at least partially or completely through the thickness of the carbon hard mask layer 210. The carbon hard mask layer 210 can be or include any type of carbon hard mask (including the carbon hard mask 110 described and discussed above). In one or more instances, the carbon hard mask layer 210 can be etched or otherwise removed by exposing the carbon hard mask layer 210 to one or more etchant gases and one or more passivation gases. The etchant gas can be or include argon, oxygen, or a combination thereof, and the passivation gas can be or include methane, sulfur dioxide, carbonyl sulfide, or any combination thereof.

[0056] Figures 2B to 2C Illustrated is the processing or transformation of the carbon hard mask layer 210 ( Figure 2B ) to produce an alumina-carbon hybrid hard mask 220 ( Figure 2C ) by SIS processing. The SIS processing is selective to the carbon hard mask layer 210 while not reacting or substantially not reacting with other exposed surfaces and layers on the workpiece 200 (e.g., the underlying layer 204, the silicon-containing hard mask 230, and the patterned PR layer 240). The alumina-carbon hybrid hard mask 220 is denser than the carbon hard mask layer 210. The alumina-carbon hybrid hard mask 220 can have the composition and properties of the alumina-carbon hybrid hard mask 120 as described and discussed above.

[0057] In some instances, feature 242 is etched at least partially or completely through the thickness of the underlying layer 204. As Figure 2D shown, feature 242 is only partially etched into the thickness of the underlying layer 204. The underlying layer 204 can be partially etched by exposing the underlying layer 204 to one or more carbon fluoride etchants and one or more process gases. The carbon fluoride etchant can be or include tetrafluoromethane, trifluoromethane, difluoromethane, fluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The process gas can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2), or any combination thereof.

[0058] The alumina-carbon hybrid hard mask 220 comprises at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 220 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 220 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0059] The range of oxygen contained in the alumina-carbon hybrid hard mask 220 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 220 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0060] The range of carbon contained in the alumina-carbon hybrid hard mask 220 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 220 can be about 40 at% to about 90 at%, about 50 at% to about 90 at%, about 60 at% to about 90 at%, about 70 at% to about 90 at%, about 80 at% to about 90 at%, about 40 at% to about 75 at%, about 50 at% to about 75 at%, about 60 at% to about 75 at%, about 70 at% to about 75 at%, about 40 at% to about 60 at%, about 45 at% to about 60 at%, about 50 at% to about 60 at%, or about 55 at% to about 60 at%.

[0061] In one or more instances, the alumina carbon hybrid hard mask 220 can comprise from about 5 at% to about 20 at% aluminum, from about 5 at% to about 30 at% oxygen, and from about 50 at% to about 90 at% carbon. In some instances, the alumina carbon hybrid hard mask 220 can comprise from about 10 at% to about 20 at% aluminum, from about 10 at% to about 30 at% oxygen, and from about 50 at% to about 80 at% carbon. In one or more instances, the alumina carbon hybrid hard mask 220 can comprise from about 5 at% to about 10 at% aluminum, from about 5 at% to about 20 at% oxygen, and from about 70 at% to about 90 at% carbon.

[0062] The thickness of the alumina carbon hybrid hard mask 220 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As Figure 2D shown, the alumina carbon hybrid hard mask 220 can be a patterned layer or include a patterned layer that contains a feature pattern of the feature 242. The height of the feature pattern or the feature 242 can be the same as or less than the thickness of the alumina carbon hybrid hard mask 220. Thus, the height of the feature pattern or the feature 242 can range from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The feature pattern of the patterned layer or the alumina carbon hybrid hard mask 220 or the feature 242 is separated by vias, gaps, or spaces that can have a width of from about 5 nm to about 250 nm, from about 10 nm to about 150 nm, or from about 20 nm to about 100 nm. The feature pattern or the feature 242 can have an aspect ratio of from about 20 to about 500, from about 30 to about 300, or from about 40 to about 200.

[0063] Figures 3A to 3FCross-sectional view of workpiece 300 at different stages of a process for fabricating or otherwise forming a device, as described and discussed in one or more embodiments herein. The device may be or include a memory device, a logic device, a microelectronic device, and / or other devices. In one or more embodiments, a method for forming or otherwise fabricating a device is provided, the method comprising: positioning workpiece 300 within a processing region of a processing chamber, wherein workpiece 300 includes a metal or metal nitride layer 304 disposed on or above a substrate 302, a silicon-containing hard mask 330 disposed on or above metal or metal nitride layer 304, and a patterned photoresist (PR) layer 340 having a feature pattern with features 342 disposed on silicon-containing hard mask 330. The method further comprises: etching silicon-containing hard mask 330 to have the feature pattern of features 342 of patterned PR layer 340; removing patterned PR layer 340 from silicon-containing hard mask 330; and depositing a carbon hard mask layer 310 at least into features 342 of patterned PR layer 340. The method also comprises: processing carbon hard mask layer 310 by exposing workpiece 300 to a SIS process to produce an alumina-carbon hybrid hard mask 320 that is denser than carbon hard mask layer 310; and etching silicon-containing hard mask 330 to produce an inverse pattern 332 within alumina-carbon hybrid hard mask 320.

[0064] As Figure 3A shown, patterned PR layer 340 may be deposited, formed, positioned, or otherwise disposed on silicon-containing hard mask 330. In one or more embodiments, patterned PR layer 340 may be produced or otherwise formed by extreme ultraviolet (EUV) lithography processing or deep ultraviolet (DUV) lithography processing. In one or more instances, patterned PR layer 340 may be or include an EUV stack that includes a PR layer below a bottom anti-reflective coating (BARC) layer to provide a PR / BARC stack. In other instances, patterned PR layer 340 may be or include a DUV stack that includes a PR layer below a BARC layer below a dielectric anti-reflective coating (DARC) layer to provide a PR / BARC / DARC stack.

[0065] Metal or metal nitride layer 304 may be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof. Metal or metal nitride layer 304 may be or include a stack disposed on or above substrate 302. In one or more instances, the stack includes alternating layers of silicon oxide and silicon nitride. Substrate 302 may be or include any type of substrate (including substrate 102 described and discussed above).

[0066] In some instances, the metal or metal nitride layer 304 may be or include one or more metal layers. In one or more instances, the metal layer may be or include a metal such as titanium, tantalum, tungsten, or an alloy of any combination thereof. In other instances, the metal or metal nitride layer 304 may be or include a metal nitride layer, and the metal nitride layer may be or include titanium nitride, tantalum nitride, tungsten nitride, or an alloy of any combination thereof. In some instances, the metal or metal nitride layer 304 may be or include any type of one or more layers (including the underlying layer 104 described and discussed above).

[0067] In some embodiments, as Figure 3B shown, the feature 342 is etched completely through the thickness of the silicon-containing hard mask 330. Thereafter, the patterned PR layer 340 can be removed from the workpiece 300. The silicon-containing hard mask 330 may be or include silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. In one or more instances, the silicon-containing hard mask 330 may be or include any type of hard mask (including the silicon-containing hard mask 230 described and discussed above). In some instances, the silicon-containing hard mask 330 can be etched or otherwise removed by exposing it to one or more carbon fluoride etchants and one or more process gases. The carbon fluoride etchant may be or include tetrafluoromethane, trifluoromethane, difluoromethane, fluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The process gas may be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0068] In one or more embodiments, the patterned PR layer 340 may be derived from the silicon-containing hard mask 330 (including exposing the patterned PR layer 340 to an etching process). In some instances, the etching process includes exposing the patterned PR layer 340 to a combination of one or more halogen-containing compounds and at least one of oxygen (O 2 ), argon, helium, or a combination thereof. The halogen-containing compound may be or include chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof. In other embodiments, the patterned PR layer 340 can be removed from the silicon-containing hard mask 330 by exposing the patterned PR layer 340 to a polishing process. The polishing process may be a chemical mechanical polishing (CMP) process.

[0069] As Figure 3CAs shown, a carbon hard mask layer 310 can be deposited or otherwise formed on the upper surface of the patterned PR layer 340 while depositing the carbon hard mask layer 310 into the feature pattern of the features 342 of the patterned PR layer 340. The carbon hard mask layer 310 can have the composition and properties of the carbon hard mask layer 110 as described and discussed above, and can be deposited or otherwise formed by the same processes as the carbon hard mask layer 110 as described and discussed above.

[0070] As Figure 3D shown, before processing the carbon hard mask layer 310 using SIS processing, the carbon hard mask layer 310 can be removed from the upper surface of the patterned PR layer 340. In one or more instances, removing the carbon hard mask layer 310 from the upper surface of the patterned PR layer 340 includes a polishing process (e.g., CMP).

[0071] Figures 3D to 3E Illustrated is the processing or transformation of the carbon hard mask layer 310 ( Figure 3D ) into an alumina-carbon hybrid hard mask 320 ( Figure 3E ) by SIS processing. The SIS processing is selective for the carbon hard mask layer 310 while not reacting or substantially not reacting with other exposed surfaces and layers (e.g., the metal or metal nitride layer 304 and the silicon-containing hard mask 330 on the workpiece 300). The alumina-carbon hybrid hard mask 320 is denser than the carbon hard mask layer 310. The alumina-carbon hybrid hard mask 320 can have the composition and properties of the alumina-carbon hybrid hard mask 120 as described and discussed above.

[0072] In one or more embodiments, as Figure 3F shown, the silicon-containing hard mask 330 can be etched or otherwise removed to create an inverse pattern 332 within the alumina-carbon hybrid hard mask 320. In one or more instances, the silicon-containing hard mask 330 can be etched by exposing the workpiece 300 to inductively coupled plasma (ICP) to remove the silicon-containing hard photomask 330 while maintaining the alumina-carbon hybrid hard mask 320 on the metal or nitride layer 304. In some instances, the ICP comprises a mixture of oxygen (O 2 ) and argon or can be formed from a mixture of oxygen (O 2 ) and argon.

[0073] In other embodiments, the silicon-containing hard mask 330 can be etched or otherwise removed by other processes to create an inverse pattern 332 within the alumina-carbon hybrid hard mask 320. The workpiece 300 can be exposed to a selective removal process or a wet etching process to remove the silicon-containing hard mask 330 while maintaining the alumina-carbon hybrid hard mask 320 on the metal or metal nitride layer 304.

[0074] The alumina-carbon hybrid hard mask 320 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 320 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 320 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0075] The range of oxygen contained in the alumina-carbon hybrid hard mask 320 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 320 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0076] The range of carbon contained in the alumina-carbon hybrid hard mask 320 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 320 can be from about 40 at% to about 90 at%, from about 50 at% to about 90 at%, from about 60 at% to about 90 at%, from about 70 at% to about 90 at%, from about 80 at% to about 90 at%, from about 40 at% to about 75 at%, from about 50 at% to about 75 at%, from about 60 at% to about 75 at%, from about 70 at% to about 75 at%, from about 40 at% to about 60 at%, from about 45 at% to about 60 at%, from about 50 at% to about 60 at%, or from about 55 at% to about 60 at%.

[0077] In one or more instances, the alumina-carbon hybrid hard mask 320 can contain about 5 at% to about 20 at% of aluminum, about 5 at% to about 30 at% of oxygen, and about 50 at% to about 90 at% of carbon. In some instances, the alumina-carbon hybrid hard mask 320 can contain about 10 at% to about 20 at% of aluminum, about 10 at% to about 30 at% of oxygen, and about 50 at% to about 80 at% of carbon. In one or more instances, the alumina-carbon hybrid hard mask 320 can contain about 5 at% to about 10 at% of aluminum, about 5 at% to about 20 at% of oxygen, and about 70 at% to about 90 at% of carbon.

[0078] The thickness of the alumina-carbon hybrid hard mask 320 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As Figure 3F shown, the alumina-carbon hybrid hard mask 320 can be a patterned layer or include a patterned layer, and the patterned layer contains a feature pattern of the feature 342. The height of the feature pattern or the feature 342 can be the same as or less than the thickness of the alumina-carbon hybrid hard mask 320. Thus, the range of the height of the feature pattern or the feature 342 can be from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The feature pattern or the feature 342 of the patterned layer or the alumina-carbon hybrid hard mask 320 is separated by vias, gaps, or spaces, and the vias, gaps, or spaces can have a width of about 5 nm to about 250 nm, from about 10 nm to about 150 nm, or from about 20 nm to about 100 nm. The feature pattern or the feature 342 can have an aspect ratio of about 20 to about 500, from about 30 to about 300, or from about 40 to about 200.

[0079] Figures 4A to 4GCross-sectional view of workpiece 400 at different stages of a process for fabricating or otherwise forming a device, as described and discussed in one or more embodiments herein. The device may be or include a memory device, a logic device, a microelectronic device, and / or other devices. In one or more embodiments, a method for forming or otherwise producing a device is provided, the method including: positioning workpiece 400 within a processing region of a processing chamber, wherein workpiece 400 includes a metal or metal nitride layer 404 disposed on or above a substrate 402, a silicon-containing hard mask 430 disposed on or above metal or metal nitride layer 404, and a patterned photoresist (PR) layer 440 having a feature pattern with features 442 disposed on silicon-containing hard mask 430. The method also includes: etching silicon-containing hard mask 430 to have the feature pattern of features 442 of patterned PR layer 440; removing patterned PR layer 440 from silicon-containing hard mask 430; and depositing a carbon hard mask layer 410 into features 442 of patterned PR layer 440 and onto an upper surface of patterned PR layer 440. The method further includes: depositing a photoresist anti-reflective coating (PR-ARC) layer 450 on a first portion of carbon hard mask layer 410 while exposing a second portion of carbon hard mask layer 410. Additionally, the method includes: etching the second portion of carbon hard mask layer 410 during a first mask etching process while maintaining PR-ARC layer 450 and the first portion of carbon hard mask layer 410 on workpiece 400; and etching PR-ARC layer 450 during a second mask etching process while maintaining the first portion of carbon hard mask layer 410 on workpiece 400. The method further includes: processing the first portion of carbon hard mask layer 410 by exposing workpiece 400 to an SIS process to produce an alumina-carbon hybrid hard mask 420 that is denser than carbon hard mask layer 410.

[0080] As Figure 4A shown, patterned PR layer 440 may be deposited, formed, positioned, or otherwise disposed on silicon-containing hard mask 430. In one or more embodiments, patterned PR layer 440 may be produced or otherwise formed by extreme ultraviolet (EUV) lithography processing or deep ultraviolet (DUV) lithography processing. In one or more instances, patterned PR layer 440 may be or include an EUV stack that includes a PR layer below a bottom anti-reflective coating (BARC) layer to provide a PR / BARC stack. In other instances, patterned PR layer 440 may be or include a DUV stack that includes a PR layer below a BARC layer below a dielectric anti-reflective coating (DARC) layer to provide a PR / BARC / DARC stack.

[0081] The metal or metal nitride layer 404 can be or include a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. The metal or metal nitride layer 404 can be or include a stack disposed on or above the substrate 402. In one or more instances, the stack includes alternating layers of silicon oxide and silicon nitride. The substrate 402 can be or include any type of substrate (including the substrate 102 described and discussed above).

[0082] In some instances, the metal or metal nitride layer 404 can be or include one or more metal layers. In one or more instances, the metal layer can be or include an alloy of titanium metal, tantalum metal, tungsten metal, or any combination thereof. In other instances, the metal or metal nitride layer 404 can be or include a metal nitride layer, and the metal nitride layer can be or include an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof. In some instances, the metal or metal nitride layer 404 can be or include any type of one or more layers (including the underlying layer 104 and / or the metal or metal nitride layer 304 described and discussed above).

[0083] In some embodiments, as Figure 4B shown, the feature 442 is etched completely through the thickness of the silicon-containing hard mask 430. Thereafter, the patterned PR layer 440 can be removed from the workpiece 400. The silicon-containing hard mask 430 can be or include silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof. In one or more instances, the silicon-containing hard mask 430 can be or include any type of hard mask (including the silicon-containing hard mask 230 described and discussed above). In some instances, the silicon-containing hard mask 430 can be etched or otherwise removed by exposing the silicon-containing hard mask 430 to one or more carbon fluoride etchants and one or more process gases. The carbon fluoride etchant can be or include tetrafluoromethane, trifluoromethane, difluoromethane, fluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof. The process gas can be or include argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0084] In one or more embodiments, the patterned PR layer 440 can be derived from the silicon-containing hard mask 430 (including exposing the patterned PR layer 440 to an etching process). In some instances, the etching process includes exposing the patterned PR layer 440 to a combination of one or more halogen-containing compounds and at least one of oxygen (O 2 ), argon, helium, or a combination thereof. The halogen-containing compound can be or include a chloride (Cl 2), hydrogen bromide (HBr), or any combination thereof. In other embodiments, the patterned PR layer 440 can be removed from the silicon-containing hard mask 430 by exposing the patterned PR layer 440 to a polishing process. The polishing process can be a chemical mechanical polishing (CMP) process.

[0085] As Figure 4C shown, a carbon hard mask layer 410 can be deposited or otherwise formed on the upper surface of the patterned PR layer 440 while depositing the carbon hard mask layer 410 into the features 442 of the patterned PR layer 440. The carbon hard mask layer 410 can have the composition and properties of the carbon hard mask layer 110 as described and discussed above, and can be deposited or otherwise formed by the same processes as the carbon hard mask layer 110 as described and discussed above.

[0086] As Figure 4D shown, a photoresist anti-reflective coating (PR-ARC) layer 450 can be deposited, formed, or otherwise disposed on one or more first portions of the carbon hard mask layer 410 while leaving one or more second portions of the carbon hard mask layer 410 exposed. The PR-ARC layer 450 can be produced by EUV lithography processing and / or DUV lithography processing. In one or more instances, the PR-ARC layer 450 can be or include a photoresist layer, a bottom anti-reflective coating (BARC) layer, and a dielectric anti-reflective coating (DARC) layer. In other instances, the PR-ARC layer 450 can be or include a photoresist layer and a silicon-containing anti-reflective coating (SiARC) layer.

[0087] As Figure 4E shown, during a first mask etching process, the second portion of the carbon hard mask layer 410 is etched or otherwise removed while maintaining the PR-ARC layer 450 and the first portion of the carbon hard mask layer 410 on the workpiece 400. In one or more instances, the first mask etching process includes exposing the workpiece 400 to ICP while removing the second portion of the carbon hard mask layer 410 and maintaining the PR-ARC layer 450 and the first portion of the carbon hard mask layer 410 on the workpiece 400. In some instances, the ICP comprises a mixture of oxygen (O 2 ), and argon or can be formed by a mixture of oxygen (O 2 ), and argon.

[0088] As Figure 4F shown, during a second mask etching process, the PR-ARC layer 450 is etched or otherwise removed while maintaining the first portion of the carbon hard mask layer 410 on the workpiece 400. The second mask etching process includes exposing the workpiece 400 to a selective removal process or a wet etching process to remove the PR-ARC layer 450 while maintaining the first portion of the carbon hard mask layer 410 on the workpiece 400.

[0089] Figures 4F to 4G The illustrated carbon hard mask layer 410 ( Figure 4F ) is processed or transformed by SIS treatment to produce an alumina-carbon hybrid hard mask 420 ( Figure 4G ). The SIS treatment is selective for the carbon hard mask layer 410 and does not react or substantially does not react with other exposed surfaces and layers (e.g., the metal or metal nitride layer 404 and the silicon-containing hard mask 430 on the workpiece 400). The alumina-carbon hybrid hard mask 420 is denser than the carbon hard mask layer 410. The alumina-carbon hybrid hard mask 420 can have the composition and properties of the alumina-carbon hybrid hard mask 120 as described and discussed above.

[0090] The alumina-carbon hybrid hard mask 420 contains at least aluminum, oxygen, and carbon. In one or more embodiments, the range of aluminum contained in the alumina-carbon hybrid hard mask 420 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 14 at%, about 15 at%, about 16 at%, about 18 at%, about 20 at%, about 22 at%, or about 25 at%. For example, the range of aluminum contained in the alumina-carbon hybrid hard mask 420 can be about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0091] The range of oxygen contained in the alumina-carbon hybrid hard mask 420 can be from about 3 at%, about 4 at%, about 5 at%, about 6 at%, about 8 at%, or about 10 at% to about 12 at%, about 15 at%, about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, or about 35 at%. For example, the range of oxygen contained in the alumina-carbon hybrid hard mask 420 can be about 3 at% to about 35 at%, about 3 at% to about 30 at%, about 3 at% to about 25 at%, about 3 at% to about 20 at%, about 5 at% to about 35 at%, about 5 at% to about 30 at%, about 5 at% to about 25 at%, about 5 at% to about 20 at%, about 8 at% to about 20 at%, about 10 at% to about 20 at%, about 12 at% to about 20 at%, about 15 at% to about 20 at%, about 18 at% to about 20 at%, about 5 at% to about 30 at%, about 8 at% to about 30 at%, about 10 at% to about 30 at%, about 12 at% to about 30 at%, about 15 at% to about 30 at%, about 18 at% to about 30 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 14 at% to about 15 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, or about 8 at% to about 10 at%.

[0092] The range of carbon contained in the alumina-carbon hybrid hard mask 420 can be from about 40 at%, about 45 at%, about 50 at%, about 55 at%, about 60 at%, or about 65 at% to about 70 at%, about 75 at%, about 80 at%, about 85 at%, about 90 at%, or about 95 at%. For example, the range of carbon contained in the alumina-carbon hybrid hard mask 420 can be about 40 at% to about 90 at%, about 50 at% to about 90 at%, about 60 at% to about 90 at%, about 70 at% to about 90 at%, about 80 at% to about 90 at%, about 40 at% to about 75 at%, about 50 at% to about 75 at%, about 60 at% to about 75 at%, about 70 at% to about 75 at%, about 40 at% to about 60 at%, about 45 at% to about 60 at%, about 50 at% to about 60 at%, or about 55 at% to about 60 at%.

[0093] In one or more instances, the alumina-carbon hybrid hard mask 420 can comprise from about 5 at% to about 20 at% aluminum, from about 5 at% to about 30 at% oxygen, and from about 50 at% to about 90 at% carbon. In some instances, the alumina-carbon hybrid hard mask 420 can comprise from about 10 at% to about 20 at% aluminum, from about 10 at% to about 30 at% oxygen, and from about 50 at% to about 80 at% carbon. In one or more instances, the alumina-carbon hybrid hard mask 420 can comprise from about 5 at% to about 10 at% aluminum, from about 5 at% to about 20 at% oxygen, and from about 70 at% to about 90 at% carbon.

[0094] The thickness of the alumina-carbon hybrid hard mask 420 ranges from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. As Figure 4G shown, the alumina-carbon hybrid hard mask 420 can be a patterned layer or include a patterned layer, the patterned layer comprising a feature pattern of the feature 442. The height of the feature pattern or the feature 442 can be the same as or less than the thickness of the alumina-carbon hybrid hard mask 420. Thus, the height of the feature pattern or the feature 442 can range from about 1 μm to about 20 μm, from about 2 μm to about 10 μm, or from about 3 μm to about 6 μm. The feature pattern or the feature 442 of the patterned layer or the alumina-carbon hybrid hard mask 420 is separated by vias, gaps, or spaces, and the vias, gaps, or spaces can have a width of from about 5 nm to about 250 nm, from about 10 nm to about 150 nm, or from about 20 nm to about 100 nm. The feature pattern or the feature 442 can have an aspect ratio of from about 20 to about 500, from about 30 to about 300, or from about 40 to about 200.

[0095] Most conventional chemical vapor deposition (CVD) chambers or atomic layer deposition (ALD) chambers can serve as processing chambers suitable for performing the SIS processes described and discussed herein. An example of a processing chamber that can benefit from the SIS process is the CENTRIS ® Sym3™ etch processing chamber, which can be commercially obtained from Applied Materials, Inc. Examples of tools or systems that benefit from the SIS process are the Centura ® system with an iSprint™ ALD / CVD SSW chamber or the Endura ® system, both of which can be commercially obtained from Applied Materials, Inc.

[0096] Embodiments of the present disclosure further relate to any one or more of the following Examples 1-185.

[0097] Example 1: A method for processing a carbon hard mask layer, comprising: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises a carbon hard mask layer disposed on or above a bottom layer; and processing the carbon hard mask layer by exposing the workpiece to sequential infiltration synthesis (SIS) processing to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer, wherein the SIS processing comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained within the carbon hard mask layer; purifying the processing region to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained within the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purifying the processing region to remove gaseous residues containing the oxidant.

[0098] Example 2: The method according to Example 1, wherein the carbon hard mask layer has a thickness of from about 1 μm to about 20 μm.

[0099] Example 3: The method according to Example 1 or 2, wherein the carbon hard mask layer is a patterned layer.

[0100] Example 4: The method according to any one of Examples 1-3, wherein the patterned layer comprises features having a height of from about 1 μm to about 20 μm.

[0101] Example 5: The method according to any one of Examples 1-4, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of from about 5 nm to about 250 nm.

[0102] Example 6: The method according to any one of Examples 1-5, wherein the patterned layer comprises features having an aspect ratio of from about 20 to about 500.

[0103] Example 7: The method according to any one of Examples 1-6, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is disposed on an inner surface having polar functional groups.

[0104] Example 8: The method according to Example 7, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof.

[0105] Example 9: The method according to any one of Examples 1-8, wherein the carbon hard mask layer is deposited by thermal chemical vapor deposition (CVD) processing, plasma-enhanced CVD (PE-CVD) processing, flowable CVD (FCVD) processing, or spin coating processing.

[0106] Example 10: The method according to any one of Examples 1-9, wherein the carbon hard mask layer comprises from about 30 atomic percent (at%) to about 80 at% carbon, from about 10 at% to about 50 at% hydrogen, and from about 10 at% to about 20 at% oxygen.

[0107] Example 11: The method according to any one of Examples 1-10, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen.

[0108] Example 12: The method according to any one of Examples 1-11, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

[0109] Example 13: The method according to any one of Examples 1-12, wherein the underlying layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof.

[0110] Example 14: The method according to any one of Examples 1-13, wherein the underlying layer comprises a stack disposed on or above the substrate.

[0111] Example 15: The method according to Example 14, wherein the stack comprises alternating layers of silicon oxide and silicon nitride.

[0112] Example 16: The method according to any one of Examples 1-15, wherein the aluminum precursor comprises an alkylaluminum compound.

[0113] Example 17: The method according to any one of Examples 1-16, wherein the oxidant comprises water, ozone, atomic oxygen, an oxygen plasma, hydrogen peroxide, or any combination thereof.

[0114] Example 18: The method according to any one of Examples 1-17, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0115] Example 19: The method according to any one of Examples 1-18, wherein during the SIS process, the infiltration cycle is repeated from 2 to about 50 times.

[0116] Example 20: The method according to any one of Examples 1-19, wherein during the SIS process, the processing region of the processing chamber is at a pressure of from about 0.01 Torr to about 250 Torr.

[0117] Example 21: The method according to any one of Examples 1-20, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for from about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor.

[0118] Example 22: The method according to any one of Examples 1-21, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purifying gas for about 1 minute to about 30 minutes while purifying the processing area to remove gaseous residues containing an aluminum precursor.

[0119] Example 23: The method according to any one of Examples 1-22, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to an oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant.

[0120] Example 24: The method according to any one of Examples 1-23, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purifying gas for about 1 minute to about 30 minutes while purifying the processing area to remove gaseous residues containing an oxidant.

[0121] Example 25: A method of forming a device, comprising: positioning a workpiece within a processing area of a processing chamber, wherein the workpiece comprises: a carbon hard mask layer disposed on or above a bottom layer; a silicon-containing hard mask disposed on or above the carbon hard mask layer; and a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask layer and the carbon hard mask layer to respectively have the feature pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the bottom layer to have the feature pattern of the patterned photoresist layer.

[0122] Example 26: The method according to Example 25, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purifying the processing area to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purifying the processing area to remove gaseous residues containing the oxidant.

[0123] Example 27: The method according to Example 25 or 26, wherein the aluminum precursor comprises an alkylaluminum compound.

[0124] Example 28: The method according to any one of Examples 25-27, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

[0125] Example 29: The method according to any one of Examples 25-28, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0126] Example 30: The method according to any one of Examples 25-29, wherein during the SIS process, the infiltration cycle is repeated from 2 to about 50 times.

[0127] Example 31: The method according to any one of Examples 25-30, wherein during the SIS process, the processing area of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr.

[0128] Example 32: The method according to any one of Examples 25-31, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to an aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor.

[0129] Example 33: The method according to any one of Examples 25-32, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues containing the aluminum precursor.

[0130] Example 34: The method according to any one of Examples 25-33, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to an oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant.

[0131] Example 35: The method according to any one of Examples 25-34, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues containing the oxidant.

[0132] Example 36: The method according to any one of Examples 25-35, wherein the patterned photoresist layer is generated by extreme ultraviolet (EUV) lithography or deep ultraviolet (DUV) lithography.

[0133] Example 37: The method according to any one of Examples 25-36, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof.

[0134] Example 38: The method according to any one of Examples 25-37, wherein the device is a memory device, a logic device, or a microelectronic device.

[0135] Example 39: The method according to any one of Examples 25-38, wherein the feature pattern is etched completely through the thickness of the silicon-containing hard mask.

[0136] Example 40: The method according to any one of Examples 25-39, wherein etching the silicon-containing hard mask further comprises: exposing the silicon-containing hard mask to a carbon fluoride etchant and a processing gas.

[0137] Example 41: The method according to Example 40, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0138] Example 42: The method according to any one of Examples 25-41, wherein the feature pattern is etched completely through the thickness of the carbon hard mask layer.

[0139] Example 43: The method according to any one of Examples 25-42, wherein etching the carbon hard mask layer further comprises: exposing the carbon hard mask layer to an etchant gas and a passivation gas.

[0140] Example 44: The method according to Example 43, wherein the etchant gas comprises argon, oxygen, or a combination thereof, and the passivation gas comprises methane, sulfur dioxide, carbonyl sulfide, or any combination thereof.

[0141] Example 45: The method according to any one of Examples 25-44, wherein the feature pattern is partially etched into the thickness of the underlying layer.

[0142] Example 46: The method according to any one of Examples 25-45, wherein partially etching the underlying layer further comprises: exposing the underlying layer to a carbon fluoride etchant and a processing gas.

[0143] Example 47: The method according to Example 46, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0144] Example 48: The method according to any one of Examples 25-47, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

[0145] Example 49: The method according to any one of Examples 25-48, wherein the carbon hard mask layer is a patterned layer.

[0146] Example 50: The method according to any one of Examples 25-49, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm.

[0147] Example 51: The method according to any one of Examples 25-50, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of from about 5 nm to about 250 nm.

[0148] Example 52: The method according to any one of Examples 25-51, wherein the patterned layer comprises features having an aspect ratio of from about 20 to about 500.

[0149] Example 53: The method according to any one of Examples 25-52, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is provided on an inner surface having polar functional groups.

[0150] Example 54: The method according to Example 53, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof.

[0151] Example 55: The method according to any one of Examples 25-54, wherein the carbon hard mask layer is deposited by a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin coating process.

[0152] Example 56: The method according to any one of Examples 25-55, wherein the carbon hard mask layer comprises from about 30 atomic percent (at%) to about 80 at% carbon, from about 10 at% to about 50 at% hydrogen, and from about 10 at% to about 20 at% oxygen.

[0153] Example 57: The method according to any one of Examples 25-56, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen.

[0154] Example 58: The method according to any one of Examples 25-57, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

[0155] Example 59: The method according to any one of Examples 25-58, wherein the underlying layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof.

[0156] Example 60: The method according to any one of Examples 25-59, wherein the underlying layer comprises a stack disposed on or above the substrate.

[0157] Example 61: The method according to Example 60, wherein the stack comprises alternating layers of silicon oxide and silicon nitride.

[0158] Example 62: A method of forming a device, comprising: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; depositing a carbon hard mask layer at least into the feature pattern of the patterned photoresist layer; processing the carbon hard mask layer by exposing the workpiece to sequential infiltration synthesis (SIS) processing to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; and etching the silicon-containing hard mask to produce a reverse pattern within the alumina-carbon hybrid hard mask.

[0159] Example 63: The method according to Example 62, wherein the SIS processing comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained within the carbon hard mask layer; purging the processing region to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained within the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purging the processing region to remove gaseous residues containing the oxidant.

[0160] Example 64: The method according to Example 62 or 63, wherein the aluminum precursor comprises an alkylaluminum compound.

[0161] Example 65: The method according to any one of Examples 62-64, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

[0162] Example 66: The method according to any one of Examples 62-65, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0163] Example 67: The method according to any one of Examples 62-66, wherein during the SIS processing, the infiltration cycle is repeated from 2 to about 50 times.

[0164] Example 68: The method according to any one of Examples 62-67, wherein during the SIS processing, the processing region of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr.

[0165] Example 69: The method according to any one of Examples 62-68, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor.

[0166] Example 70: The method according to any one of Examples 62-69, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purging gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues containing aluminum precursors.

[0167] Example 71: The method according to any one of Examples 62-70, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to an oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant.

[0168] Example 72: The method according to any one of Examples 62-71, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to a purging gas for about 1 minute to about 30 minutes while purging the processing area to remove gaseous residues containing the oxidant.

[0169] Example 73: The method according to any one of Examples 62-72, wherein the patterned photoresist layer is generated by extreme ultraviolet (EUV) lithography or deep ultraviolet (DUV) lithography.

[0170] Example 74: The method according to any one of Examples 62-73, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof.

[0171] Example 75: The method according to any one of Examples 62-74, wherein the device is a memory device, a logic device, or a microelectronic device.

[0172] Example 76: The method according to any one of Examples 62-75, wherein the feature pattern is etched completely through the thickness of the silicon-containing hard mask.

[0173] Example 77: The method according to any one of Examples 62-76, wherein etching the silicon-containing hard mask further comprises: exposing the silicon-containing hard mask to a carbon fluoride etchant and a processing gas.

[0174] Example 78: The method according to Example 77, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0175] Example 79: The method according to any one of Examples 62-78, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises: exposing the patterned photoresist layer to an etching process.

[0176] Example 80: The method according to Example 79, wherein the etching process comprises exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O 2 ), argon, helium, or a combination thereof.

[0177] Example 81: The method according to Example 80, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof.

[0178] Example 82: The method according to any one of Examples 62-81, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises: exposing the patterned photoresist layer to a polishing process.

[0179] Example 83: The method according to Example 82, wherein the polishing process comprises a chemical mechanical polishing (CMP) process.

[0180] Example 84: The method according to any one of Examples 62-83, further comprising: depositing a carbon hard mask layer onto the upper surface of the patterned photoresist layer while depositing the carbon hard mask layer into the feature pattern of the patterned photoresist layer.

[0181] Example 85: The method according to Example 84, further comprising: removing the carbon hard mask layer from the upper surface of the patterned photoresist layer before processing the carbon hard mask layer using SIS processing.

[0182] Example 86: The method according to Example 85, wherein removing the carbon hard mask layer from the upper surface of the patterned photoresist layer comprises a polishing process.

[0183] Example 87: The method according to any one of Examples 62-86, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

[0184] Example 88: The method according to any one of Examples 62-87, wherein the carbon hard mask layer is a patterned layer.

[0185] Example 89: The method according to Example 88, wherein the patterned layer comprises features having a height of about 1 μm to about 20 μm.

[0186] Example 90: The method according to Example 88 or 89, wherein the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0187] Example 91: The method according to any one of Examples 88-90, wherein the patterned layer comprises features having an aspect ratio of about 20 to about 500.

[0188] Example 92: The method according to any one of Examples 62-91, wherein the carbon hard mask layer comprises a carbon-containing material having polar functional groups, and wherein the alumina coating is provided on the inner surface having polar functional groups.

[0189] Example 93: The method according to Example 92, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof.

[0190] Example 94: The method according to any one of Examples 62-93, wherein the carbon hard mask layer is deposited by thermal chemical vapor deposition (CVD) processing, plasma enhanced CVD (PE-CVD) processing, flowable CVD (FCVD) processing, or spin coating processing.

[0191] Example 95: The method according to any one of Examples 62-94, wherein the carbon hard mask layer comprises from about 30 atomic percent (at%) to about 80 at% carbon, from about 10 at% to about 50 at% hydrogen, and from about 10 at% to about 20 at% oxygen.

[0192] Example 96: The method according to any one of Examples 62-95, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen.

[0193] Example 97: The method according to any one of Examples 62-96, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

[0194] Example 98: The method according to any one of Examples 62-97, wherein etching the silicon-containing hard mask to create an inverse pattern within the alumina-carbon hybrid hard mask further comprises: exposing the workpiece to inductively coupled plasma (ICP) to remove the silicon-containing hard mask while maintaining the alumina-carbon hybrid hard mask on the metal or metal nitride layer.

[0195] Example 99: The method according to Example 98, wherein the ICP comprises a mixture of oxygen (O 2 ) and argon.

[0196] Example 100: The method according to any one of Examples 62-99, wherein etching the silicon-containing hard mask to create an inverse pattern within the alumina-carbon hybrid hard mask further comprises: exposing the workpiece to a selective removal process or a wet etching process to remove the silicon-containing hard mask while maintaining the alumina-carbon hybrid hard mask on the metal or metal nitride layer.

[0197] Example 101: The method according to any one of Examples 62-100, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of titanium metal, tantalum metal, tungsten metal, or any combination thereof.

[0198] Example 102: The method according to any one of Examples 62-101, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof.

[0199] Example 103: A method of forming a device, comprising: positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises: a metal or metal nitride layer disposed on or above a substrate; a silicon-containing hard mask disposed on or above the metal or metal nitride layer; and a patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; etching the silicon-containing hard mask to have the feature pattern of the patterned photoresist layer; removing the patterned photoresist layer from the silicon-containing hard mask; depositing a carbon hard mask layer into the feature pattern of the patterned photoresist layer and onto the upper surface of the patterned photoresist layer; depositing a photoresist anti-reflective coating (PR-ARC) layer on a first portion of the carbon hard mask layer while leaving a second portion of the carbon hard mask layer exposed; during a first mask etching process, etching the second portion of the carbon hard mask layer while maintaining the PR-ARC layer on the workpiece and the first portion of the carbon hard mask layer; during a second mask etching process, etching the PR-ARC layer while maintaining the first portion of the carbon hard mask layer on the workpiece; and processing the first portion of the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer.

[0200] Example 104: The method according to Example 103, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: exposing the carbon hard mask layer to an aluminum precursor; infiltrating the carbon hard mask layer with the aluminum precursor through pores contained in the carbon hard mask layer; purging the processing region to remove gaseous residues containing the aluminum precursor; exposing the carbon hard mask layer to an oxidant; infiltrating the carbon hard mask layer with the oxidant through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; and purging the processing region to remove gaseous residues containing the oxidant.

[0201] Example 105: The method according to Example 103 or 104, wherein the aluminum precursor comprises an alkyl aluminum compound.

[0202] Example 106: The method according to any one of Examples 103-105, wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

[0203] Example 107: The method according to any one of Examples 103 - 106, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water.

[0204] Example 108: The method according to any one of Examples 103 - 107, wherein during the SIS process, the infiltration cycle is repeated from 2 to about 50 times.

[0205] Example 109: The method according to any one of Examples 103 - 108, wherein during the SIS process, the processing area of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr.

[0206] Example 110: The method according to any one of Examples 103 - 109, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor.

[0207] Example 111: The method according to any one of Examples 103 - 110, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residues containing the aluminum precursor.

[0208] Example 112: The method according to any one of Examples 103 - 111, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant.

[0209] Example 113: The method according to any one of Examples 103 - 112, wherein during each of the infiltration cycles, the carbon hard mask layer is exposed to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residues containing the oxidant.

[0210] Example 114: The method according to any one of Examples 103 - 113, wherein the patterned photoresist layer is generated by extreme ultraviolet (EUV) lithography or deep ultraviolet (DUV) lithography.

[0211] Example 115: The method according to any one of Examples 103 - 114, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof.

[0212] Example 116: The method according to any one of Examples 103 - 115, wherein the device is a memory device, a logic device, or a microelectronic device.

[0213] Example 117: The method according to any one of Examples 103 - 116, wherein the feature pattern is etched completely through the thickness of the silicon-containing hard mask.

[0214] Example 118: The method according to any one of Examples 103 - 117, wherein etching the silicon-containing hard mask further comprises: exposing the silicon-containing hard mask to a carbon fluoride etchant and a processing gas.

[0215] Example 119: The method according to Example 118, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

[0216] Example 120: The method according to any one of Examples 103 - 119, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises: exposing the patterned photoresist layer to an etching process.

[0217] Example 121: The method according to Example 120, wherein the etching process comprises exposing the patterned photoresist layer to a combination of a halogen-containing compound and at least one of oxygen (O 2 ), argon, helium, or a combination thereof.

[0218] Example 122: The method according to Example 121, wherein the halogen-containing compound comprises chloride (Cl 2 ), hydrogen bromide (HBr), or any combination thereof.

[0219] Example 123: The method according to any one of Examples 103 - 122, wherein removing the patterned photoresist layer from the silicon-containing hard mask comprises: exposing the patterned photoresist layer to a polishing process.

[0220] Example 124: The method according to Example 123, wherein the polishing process comprises a chemical mechanical polishing (CMP) process.

[0221] Example 125: The method according to any one of Examples 103 - 124, wherein the first mask etching process comprises exposing the workpiece to inductively coupled plasma (ICP) while removing a second portion of the carbon hard mask layer and maintaining a first portion of the PR-ARC layer and the carbon hard mask layer on the workpiece.

[0222] Example 126: The method according to Example 125, wherein the ICP comprises a mixture of oxygen (O 2 ) and argon.

[0223] Example 127: The method according to any one of Examples 103 - 126, wherein the second mask etching process includes exposing the workpiece to a selective removal process or a wet etching process to remove the PR-ARC layer while maintaining a first portion of the carbon hard mask layer on the workpiece.

[0224] Example 128: The method according to any one of Examples 103 - 127, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

[0225] Example 129: The method according to any one of Examples 103 - 128, wherein the carbon hard mask layer is a patterned layer.

[0226] Example 130: The method according to Example 129, wherein the patterned layer includes features having a height of about 1 μm to about 20 μm.

[0227] Example 131: The method according to Example 129 or 130, wherein the patterned layer includes features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0228] Example 132: The method according to any one of Examples 129 - 131, wherein the patterned layer includes features having an aspect ratio of about 20 to about 500.

[0229] Example 133: The method according to any one of Examples 103 - 132, wherein the carbon hard mask layer includes a carbon-containing material having polar functional groups, and wherein the alumina coating is provided on the inner surface having polar functional groups.

[0230] Example 134: The method according to Example 133, wherein the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof.

[0231] Example 135: The method according to any one of Examples 103 - 134, wherein the carbon hard mask layer is deposited by a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD (PE-CVD) process, a flowable CVD (FCVD) process, or a spin coating process.

[0232] Example 136: The method according to any one of Examples 103 - 135, wherein the carbon hard mask layer includes about 30 atomic percent (at%) to about 80 at% carbon, about 10 at% to about 50 at% hydrogen, and about 10 at% to about 20 at% oxygen.

[0233] Example 137: The method according to any one of Examples 103 - 136, wherein the alumina-carbon hybrid hard mask includes about 5 at% to about 20 at% aluminum and about 5 at% to about 30 at% oxygen.

[0234] Example 138: The method according to any one of Examples 103 - 137, wherein the alumina - carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

[0235] Example 139: The method according to any one of Examples 103 - 138, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises an alloy of metal titanium, metal tantalum, metal tungsten, or any combination thereof.

[0236] Example 140: The method according to any one of Examples 103 - 139, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises an alloy of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof.

[0237] Example 141: The method according to any one of Examples 103 - 140, wherein the PR - ARC layer is produced by extreme ultraviolet (EUV) lithography processing.

[0238] Example 142: The method according to any one of Examples 103 - 141, wherein the PR - ARC layer comprises a photoresist layer, a bottom anti - reflection coating (BARC) layer, and a dielectric anti - reflection coating (DARC) layer.

[0239] Example 143: The method according to any one of Examples 103 - 142, wherein the PR - ARC layer comprises a photoresist layer and a silicon - containing anti - reflection coating (SiARC) layer.

[0240] Example 144: A workpiece and / or device prepared, constructed, processed, or otherwise made by the method according to any one of Examples 1 - 143 and / or as shown in any one of the accompanying drawings.

[0241] Example 145: A workpiece and / or device comprising: a bottom layer disposed on a substrate; and an alumina - carbon hybrid hard mask disposed on the bottom layer, wherein the alumina - carbon hybrid hard mask comprises features.

[0242] Example 146: The workpiece and / or device according to Example 145, wherein the alumina - carbon hybrid hard mask has a thickness of from about 1 μm to about 20 μm.

[0243] Example 147: The workpiece and / or device according to Example 145 or 146, wherein the alumina - carbon hybrid hard mask comprises features having a height of from about 1 μm to about 20 μm.

[0244] Example 148: A workpiece and / or device according to any one of Examples 145 - 147, wherein the alumina-carbon hybrid hard mask comprises features separated by vias, gaps, or spaces having a width of from about 5 nm to about 250 nm.

[0245] Example 149: A workpiece and / or device according to any one of Examples 145 - 148, wherein the features have an aspect ratio of from about 20 to about 500.

[0246] Example 150: A workpiece and / or device according to any one of Examples 145 - 149, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen.

[0247] Example 151: A workpiece and / or device according to any one of Examples 145 - 150, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

[0248] Example 152: A workpiece and / or device according to any one of Examples 145 - 151, wherein the underlying layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof.

[0249] Example 153: A workpiece and / or device according to any one of Examples 145 - 152, wherein the underlying layer comprises a stack disposed on or above the substrate.

[0250] Example 154: A workpiece and / or device according to Example 153, wherein the stack comprises alternating layers of silicon oxide and silicon nitride.

[0251] Example 155: A workpiece and / or device comprising: an underlying layer disposed on a substrate; an alumina-carbon hybrid hard mask disposed on the underlying layer; a silicon-containing hard mask disposed on the alumina-carbon hybrid hard mask; and a patterned photoresist (PR) layer disposed on the silicon-containing hard mask, wherein the features extend at least through the alumina-carbon hybrid hard mask, the silicon-containing hard mask, and the patterned PR layer.

[0252] Example 156: A workpiece and / or device according to Example 155, wherein the features extend into at least a portion of the underlying layer.

[0253] Example 157: A workpiece and / or device according to Example 155 or 156, wherein the alumina-carbon hybrid hard mask has a thickness of from about 1 μm to about 20 μm.

[0254] Example 158: A workpiece and / or device according to any one of Examples 155 - 157, wherein the features have a height of from about 1 μm to about 20 μm.

[0255] Example 159: The workpiece and / or device according to any one of Examples 155 - 158, wherein the features are separated by through-holes, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0256] Example 160: The workpiece and / or device according to any one of Examples 155 - 159, wherein the features have an aspect ratio of about 20 to about 500.

[0257] Example 161: The workpiece and / or device according to any one of Examples 155 - 160, wherein the alumina-carbon hybrid hard mask comprises about 5 at% to about 20 at% aluminum and about 5 at% to about 30 at% oxygen.

[0258] Example 162: The workpiece and / or device according to any one of Examples 155 - 161, wherein the alumina-carbon hybrid hard mask further comprises about 50 at% to about 90 at% carbon.

[0259] Example 163: The workpiece and / or device according to any one of Examples 155 - 162, wherein the underlying layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof.

[0260] Example 164: The workpiece and / or device according to any one of Examples 155 - 163, wherein the underlying layer comprises a stack disposed on or above the substrate.

[0261] Example 165: The workpiece and / or device according to Example 164, wherein the stack comprises alternating layers of silicon oxide and silicon nitride.

[0262] Example 166: A workpiece and / or device comprising: a metal or metal nitride layer disposed on a substrate; and an alumina-carbon hybrid hard mask disposed on the metal or metal nitride layer, wherein the alumina-carbon hybrid hard mask comprises features.

[0263] Example 167: The workpiece and / or device according to Example 166, wherein the alumina-carbon hybrid hard mask has a thickness of about 1 μm to about 20 μm.

[0264] Example 168: The workpiece and / or device according to Example 166 or 167, wherein the alumina-carbon hybrid hard mask comprises features having a height of about 1 μm to about 20 μm.

[0265] Example 169: The workpiece and / or device according to any one of Examples 166 - 168, wherein the alumina-carbon hybrid hard mask comprises features separated by through-holes, gaps, or spaces having a width of about 5 nm to about 250 nm.

[0266] Example 170: A workpiece and / or device according to any one of Examples 166 - 169, wherein the feature has an aspect ratio of from about 20 to about 500.

[0267] Example 171: A workpiece and / or device according to any one of Examples 166 - 170, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen.

[0268] Example 172: A workpiece and / or device according to any one of Examples 166 - 171, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

[0269] Example 173: A workpiece and / or device according to any one of Examples 166 - 172, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises metal titanium, metal tantalum, metal tungsten, an alloy of any combination thereof.

[0270] Example 174: A workpiece and / or device according to any one of Examples 166 - 173, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises titanium nitride, tantalum nitride, tungsten nitride, an alloy of any combination thereof.

[0271] Example 175: A workpiece and / or device comprising: a metal or metal nitride layer disposed on a substrate; a silicon-containing hard mask disposed on the metal or metal nitride layer; and an alumina-carbon hybrid hard mask disposed on the silicon-containing hard mask layer and the metal or metal nitride layer, wherein the alumina-carbon hybrid hard mask comprises features.

[0272] Example 176: The workpiece and / or device according to Example 175, wherein the alumina-carbon hybrid hard mask has a thickness of from about 1 μm to about 20 μm.

[0273] Example 177: The workpiece and / or device according to Example 175 or 176, wherein the alumina-carbon hybrid hard mask comprises features having a height of from about 1 μm to about 20 μm.

[0274] Example 178: The workpiece and / or device according to any one of Examples 175 - 177, wherein the alumina-carbon hybrid hard mask comprises features separated by vias, gaps, or spaces having a width of from about 5 nm to about 250 nm.

[0275] Example 179: The workpiece and / or device according to any one of Examples 175 - 178, wherein the feature has an aspect ratio of from about 20 to about 500.

[0276] Example 180: The workpiece and / or device according to any one of Examples 175 - 179, wherein the alumina-carbon hybrid hard mask comprises from about 5 at% to about 20 at% aluminum and from about 5 at% to about 30 at% oxygen.

[0277] Example 181: The workpiece and / or device according to any one of Examples 175 - 180, wherein the alumina-carbon hybrid hard mask further comprises from about 50 at% to about 90 at% carbon.

[0278] Example 182: The workpiece and / or device according to any one of Examples 175 - 181, wherein the metal or metal nitride layer comprises a metal layer, and wherein the metal layer comprises a metal titanium, a metal tantalum, a metal tungsten, an alloy of any combination thereof.

[0279] Example 183: The workpiece and / or device according to any one of Examples 175 - 182, wherein the metal or metal nitride layer comprises a metal nitride layer, and wherein the metal nitride layer comprises a titanium nitride, a tantalum nitride, a tungsten nitride, an alloy of any combination thereof.

[0280] Example 184: The workpiece and / or device according to any one of Examples 175 - 183, wherein the silicon-containing hard mask comprises silicon oxide, silicon nitride, silicon oxynitride, its dopants, or any combination thereof.

[0281] Example 185: The workpiece and / or device according to any one of Examples 144 - 184, wherein the device is a memory device, a logic device, or a microelectronic device.

[0282] Although the foregoing relates to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims. All documents described herein are incorporated herein by reference and include any priority documents and / or test procedures not inconsistent herewith. From the foregoing general description and the specific embodiments, it will be apparent that, although the forms of the present disclosure have been illustrated and described, various modifications can be made without departing from the spirit and scope of the present disclosure. Accordingly, the present disclosure is not intended to be limiting. Similarly, for patent law purposes, the term "comprising" is considered synonymous with the term "including". Similarly, when a transitional phrase "comprising" precedes a composition, element, or group of elements, it is understood that the same composition or group of elements may have a transitional phrase "consisting essentially of", "consisting of", "selected from the group consisting of", or "is" preceding the recitation of the composition, element, or group of elements, and vice versa. As used herein, the term "about" refers to a variation of + / - 10% from a nominal value. It is understood that such variations can be included in any value provided herein.

[0283] Certain embodiments and features have been described using a set of upper numerical limits and a set of lower numerical limits. It should be understood that, unless otherwise specified, a range includes any combination of any two values (e.g., any combination of any lower value and any higher value, any combination of any two lower values, and / or any combination of any two higher values). Certain lower limits, upper limits, and ranges appear in one or more of the claims below.

Claims

1. A method of forming a device, the method comprising: Positioning a workpiece within a processing region of a processing chamber, wherein the workpiece comprises: A carbon hard mask layer disposed on or above a bottom layer; A silicon-containing hard mask disposed on or above the carbon hard mask layer ； And A patterned photoresist layer having a feature pattern and disposed on the silicon-containing hard mask; Etching the silicon-containing hard mask and the carbon hard mask layer to respectively have the feature pattern of the patterned photoresist layer; Processing the carbon hard mask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer; And Etching the bottom layer to have the feature pattern of the patterned photoresist layer.

2. The method of claim 1, wherein the SIS process comprises one or more infiltration cycles, and each of the infiltration cycles comprises: Exposing the carbon hard mask layer to an aluminum precursor; Using the aluminum precursor to infiltrate the carbon hard mask layer through pores contained in the carbon hard mask layer; Purifying the processing region to remove gaseous residues containing the aluminum precursor; Exposing the carbon hard mask layer to an oxidant; Using the oxidant to infiltrate the carbon hard mask layer through pores contained in the carbon hard mask layer to produce an alumina coating disposed on an inner surface of the carbon hard mask layer; And Purifying the processing region to remove gaseous residues containing the oxidant.

3. The method of claim 2, wherein the aluminum precursor comprises an alkylaluminum compound, and wherein the oxidant comprises water, ozone, atomic oxygen, oxygen plasma, hydrogen peroxide, or any combination thereof.

4. The method of claim 2, wherein the aluminum precursor comprises trimethylaluminum and the oxidant comprises water, and wherein during the SIS process, the infiltration cycle is repeated from 2 to about 50 times.

5. The method of claim 2, Wherein: During the SIS process, the processing region of the processing chamber is at a pressure of about 0.01 Torr to about 250 Torr; During each of the infiltration cycles, the carbon hard mask layer is exposed to the aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the aluminum precursor; During each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purifying the processing region to remove the gaseous residues containing the aluminum precursor; During each of the infiltration cycles, the carbon hard mask layer is exposed to the oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer with the oxidant; And During each of the infiltration cycles, the carbon hard mask layer is exposed to a purge gas for about 1 minute to about 30 minutes while purifying the processing region to remove the gaseous residues containing the oxidant.

6. The method according to claim 1, wherein the patterned photoresist layer is generated by extreme ultraviolet (EUV) lithography processing or deep ultraviolet (DUV) lithography processing.

7. The method according to claim 1, wherein the device is a memory device, a logic device, or a microelectronic device, and wherein the feature pattern is etched completely through the thickness of the silicon-containing hard mask.

8. The method according to claim 1, wherein etching the silicon-containing hard mask further comprises: exposing the silicon-containing hard mask to a carbon fluoride etchant and a process gas, wherein the carbon fluoride etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and wherein the process gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

9. The method according to claim 1, wherein the feature pattern is etched completely through the thickness of the carbon hard mask layer, and etching the carbon hard mask layer further comprises: exposing the carbon hard mask layer to an etchant gas and a passivation gas, wherein the etchant gas comprises argon, oxygen, or a combination thereof, and the passivation gas comprises methane, sulfur dioxide, carbonyl sulfide, or any combination thereof.

10. The method according to claim 1, wherein the feature pattern is partially etched into the thickness of the underlying layer, and the partial etching of the underlying layer further comprises: exposing the underlying layer to a fluorocarbon etchant and a processing gas, wherein the fluorocarbon etchant comprises tetrafluoromethane, trifluoromethane, difluoromethane, monofluoromethane, octafluorocyclobutane, hexafluoro-1,3-butadiene, or any combination thereof, and the processing gas comprises argon, helium, nitrogen (N 2 ), oxygen (O 2 ), or any combination thereof.

11. The method according to claim 1, wherein the carbon hard mask layer has a thickness of about 1 μm to about 20 μm.

12. The method according to claim 1, wherein: the carbon hard mask layer is a patterned layer; the patterned layer comprises features having a height of about 1 μm to about 20 μm; the patterned layer comprises features separated by vias, gaps, or spaces having a width of about 5 nm to about 250 nm; and the patterned layer comprises features having an aspect ratio of about 20 to about 500.

13. The method according to claim 1, wherein: the carbon hard mask layer comprises a carbon-containing material having polar functional groups; the alumina coating is disposed on the inner surface having the polar functional groups; and the polar functional groups include C-H groups, C-O groups, C=O groups, or any combination thereof.

14. The method according to claim 1, wherein the carbon hard mask layer is deposited by thermal chemical vapor deposition (CVD) processing, plasma enhanced CVD (PE-CVD) processing, flowable CVD (FCVD) processing, or spin coating processing.

15. The method according to claim 1, wherein the carbon hard mask layer comprises about 30 atomic percent (at%) to about 80 at% of carbon, about 10 at% to about 50 at% of hydrogen, and about 10 at% to about 20 at% of oxygen.

16. The method according to claim 1, wherein the alumina-carbon hybrid hard mask comprises about 5 at% to about 20 at% of aluminum, about 5 at% to about 30 at% of oxygen, and about 50 at% to about 90 at% of carbon.

17. The method according to claim 1, wherein the underlying layer comprises a metal oxide, a metal nitride, silicon oxide, silicon nitride, silicon oxynitride, a dopant thereof, or any combination thereof.

18. The method according to claim 1, wherein the underlying layer comprises a stack disposed on or above the substrate, and wherein the stack includes alternating silicon oxide layers and silicon nitride layers.

19. A method of forming a device, the method comprising: positioning a workpiece in a processing region of a processing chamber, wherein the workpiece comprises: a carbon hard mask layer disposed on or above an underlying layer; a silicon-containing hard mask disposed on or above the carbon hard mask layer ； and A patterned photoresist layer, the patterned photoresist layer having a characteristic pattern and being disposed on the silicon-containing hard mask; Etch the silicon-containing hard mask and the carbon hard mask layer to respectively have the characteristic pattern of the patterned photoresist layer; Process the carbon hard mask layer by exposing the workpiece to sequential infiltration synthesis (SIS) to produce an alumina-carbon hybrid hard mask that is denser than the carbon hard mask layer, wherein the SIS process includes one or more infiltration cycles, and each of the infiltration cycles includes: Expose the carbon hard mask layer to an aluminum precursor for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer through pores contained in the carbon hard mask layer using the aluminum precursor; Expose the carbon hard mask layer to a purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residue containing the aluminum precursor; Expose the carbon hard mask layer to an oxidant for about 1 minute to about 10 minutes while infiltrating the carbon hard mask layer through pores contained in the carbon hard mask layer using the oxidant to produce an alumina coating disposed on the inner surface of the carbon hard mask layer; and Expose the carbon hard mask layer to the purge gas for about 1 minute to about 30 minutes while purging the processing area to remove the gaseous residue containing the oxidant; and Etch the underlying layer to have the characteristic pattern of the patterned photoresist layer.

20. The method according to claim 19, wherein the carbon hard mask layer comprises about 30 atomic percent (at%) to about 80 at% of carbon, about 10 at% to about 50 at% of hydrogen, and about 10 at% to about 20 at% of oxygen.

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