Semiconductor light-emitting element, method for manufacturing semiconductor

Abstract

A semiconductor light-emitting element (1) that emits light from a tip surface (1F) is provided with a semiconductor laminate (1S) having a waveguide, a first P-side electrode (71), and a pad electrode (73). On the upper surface of the semiconductor light-emitting element (1) and above the waveguide of the semiconductor light-emitting element (1): a front bottom section (L1) which extends rearward from the front end surface (1F) and which is not provided with a pad electrode (73); a rear bottom section (L2) disposed rearward of the front bottom section (L1); a front protruding portion (H1) disposed between the front bottom portion (L1) and the rear bottom portion (L2) and protruding upward with respect to the front bottom portion (L1) and the rear bottom portion (L2); and a rear protruding portion (H2) disposed behind the rear bottom portion (L2) and protruding upward with respect to the front bottom portion (L1) and the rear bottom portion (L2). The rear protruding portion (H2) includes at least a portion of the pad electrode (73).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor light-emitting element, a semiconductor light-emitting device, a method for manufacturing a semiconductor light-emitting element, and a method for manufacturing a semiconductor light-emitting device. Background Art

[0002] Conventionally, a semiconductor light-emitting element such as an edge-emitting semiconductor laser element has been known, which includes an N-type substrate, an N-side electrode disposed on the lower surface of the substrate, a semiconductor laminate disposed on the upper surface of the substrate, and a P-side electrode disposed above the semiconductor laminate (for example, Patent Document 1, etc.).

[0003] When such a semiconductor light-emitting element is bonded to a heat sink, by bonding the P-side electrode in the semiconductor light-emitting element, which is closer to the highest-temperature active layer than the N-side electrode, to the heat sink (i.e., by face-down mounting), the heat dissipation characteristics of the semiconductor light-emitting element through the heat sink can be improved.

[0004] (Prior Art Documents)

[0005] (Patent Documents)

[0006] Patent Document 1: WO 2013 / 150715 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] In a face-down type semiconductor light-emitting element, a bonding member such as solder is used to bond to a heat sink. However, the P-side electrode generally has a pad electrode made of Au on the surface on the side bonded to the heat sink (an electrode for bonding to the bonding member). When such a P-side pad electrode is formed near the end face from which light is emitted, i.e., the front end face, the melted bonding member spreads to the side of the P-side pad, and spreads beyond the front end face of the semiconductor light-emitting element, resulting in a problem that a part of the light-emitting surface is covered. In this case, the light emitted from the front end face is blocked by the bonding member. When the light is blocked, the blocked light is converted into heat, causing the temperature of the front end face to rise, thereby inducing COD (Catastrophic Optical Damage).

[0009] In order to suppress the leakage of the bonding member to the front end face, a configuration in which a pad electrode formed of Au included in the P-side electrode is not formed in the vicinity of the front end face is considered. However, the height from the bottom surface of the semiconductor light-emitting element (the position of the upper surface of the semiconductor light-emitting element) of the region where the pad electrode is not formed in the vicinity of the front end face is lower than the height of the region where the pad electrode is formed. In such a configuration, when a covering film is formed on the front end face, which is the light-emitting end face of the semiconductor light-emitting element, the covering film is likely to be formed by bypassing the portion near the front end face where the pad electrode is not formed among the upper surfaces of the semiconductor light-emitting element. Since such a covering film is generally a dielectric multilayer film, the wettability with respect to bonding members such as solder is low. For this reason, it is difficult to dispose the bonding member in the region near the front end face of the semiconductor light-emitting element. Since the light intensity is high and the heat generation is large near the front end face of the semiconductor light-emitting element, if the bonding member for bonding to the heat sink is not disposed in this region, the heat dissipation characteristics of the semiconductor light-emitting element will be reduced. And, since the heat dissipation characteristics are reduced, the temperature during driving rises, and thus the band gap in the active layer becomes smaller, that is, a so-called band gap shrinkage phenomenon occurs. Accordingly, the life of the semiconductor light-emitting element is shortened.

[0010] An object of the present disclosure is to solve the above problems, and in a semiconductor light-emitting element that emits light from the front end face, both the reduction of heat dissipation characteristics and the blocking of light at the front end face are suppressed.

[0011] Means for solving the problem

[0012] In order to solve the above problems, one aspect of the semiconductor light-emitting element according to the present disclosure is an end-face light-emitting type semiconductor light-emitting element that has a waveguide between the front end face and the rear end face and emits light from the front end face, and the semiconductor light-emitting element includes: a substrate; a semiconductor laminate disposed above the substrate and having the waveguide; a first P-side electrode disposed above the semiconductor laminate; and a pad electrode disposed above the first P-side electrode. On the upper surface of the semiconductor light-emitting element and above the waveguide of the semiconductor light-emitting element, the semiconductor light-emitting element has a front bottom, a rear bottom, a front protrusion, and a rear protrusion. The front bottom extends rearward from the front end face, and the pad electrode is not disposed on the front bottom. The rear bottom is disposed behind the front bottom. The front protrusion is disposed between the front bottom and the rear bottom and protrudes upward with respect to the front bottom and the rear bottom. The rear protrusion is disposed behind the rear bottom and protrudes upward with respect to the front bottom and the rear bottom. The pad electrode is not disposed on the front bottom, and at least a part of the pad electrode is included in the rear protrusion.

[0013] In order to solve the above problems, another aspect of the semiconductor light-emitting device according to the present disclosure is an end-face light-emitting type semiconductor light-emitting device that has a waveguide between a front end face and a rear end face and emits light from the front end face. The semiconductor light-emitting device includes: a substrate; a semiconductor stack disposed above the substrate and having the waveguide; a first P-side electrode disposed above the semiconductor stack; and a pad electrode disposed above the first P-side electrode. On the upper surface of the semiconductor light-emitting device and above the waveguide of the semiconductor light-emitting device, the semiconductor light-emitting device has a front bottom portion and a rear protruding portion. The front bottom portion extends rearward from the front end face. The rear protruding portion is disposed behind the front bottom portion and protrudes upward with respect to the front bottom portion. The pad electrode is not disposed on the front bottom portion. The rear protruding portion includes at least a part of the pad electrode. The rear protruding portion has a first region and a second region. The first region is located above the optical axis of the light. The second region is adjacent to the first region in a lateral direction perpendicular to the propagation direction of the light and the stacking direction of the semiconductor stack. The distance from the front end face to the front end of the first region is greater than the distance from the front end face to the front end of the second region.

[0014] In order to solve the above problems, one aspect of the semiconductor light-emitting device according to the present disclosure is to include the above semiconductor light-emitting device, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting device to the heat sink. The semiconductor light-emitting device includes a second P-side electrode disposed above the first P-side electrode and the pad electrode. Each of the front protruding portion and the rear protruding portion includes a part of the second P-side electrode. The bonding member is disposed from the second P-side electrode included in the front protruding portion to the second P-side electrode included in the rear protruding portion.

[0015] In order to solve the above problems, one aspect of the semiconductor light-emitting device according to the present disclosure is to include the above semiconductor light-emitting device, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting device to the heat sink. The front protruding portion has a plurality of continuous regions and one or more gap regions. Each of the plurality of continuous regions is a region that protrudes upward with respect to the front bottom portion and the rear bottom portion. Each of the one or more gap regions is located between two adjacent continuous regions among the plurality of continuous regions and is a region that does not protrude upward with respect to the front bottom portion and the rear bottom portion. The bonding member is disposed in the one or more gap regions.

[0016] In order to solve the above problems, one aspect of the semiconductor light-emitting device according to the present disclosure includes the above-described semiconductor light-emitting element, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The front protruding portion has a plurality of continuous regions and one or more void regions. Each of the plurality of continuous regions is a region that protrudes upward with respect to the front bottom L1 and the rear bottom L2. Each of the one or more void regions is located between two adjacent continuous regions among the plurality of continuous regions and is a region that does not protrude upward with respect to the front bottom L1 and the rear bottom L2. The bonding member extends from the one or more void regions to a position in front of the front protruding portion.

[0017] In order to solve the above problems, one aspect of the semiconductor light-emitting device according to the present disclosure includes the above-described semiconductor light-emitting element, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The bonding member located in front of the first region is not disposed in front of the front end face, and the bonding member located in front of the second region extends from the front bottom to a position in front of the front end face.

[0018] In order to solve the above problems, one aspect of the semiconductor light-emitting device according to the present disclosure includes the above-described semiconductor light-emitting element, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode. The rear bottom and the rear protruding portion each include a part of the second P-side electrode. The rear protruding portion includes a part of the pad electrode. The pad electrode included in the rear protruding portion is separated from the bonding member.

[0019] In order to solve the above problems, one aspect of the semiconductor light-emitting device according to the present disclosure includes the above-described semiconductor light-emitting element, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode. The rear bottom and the rear protruding portion each include a part of the second P-side electrode. The rear protruding portion includes a part of the pad electrode. At least one of the pad electrode in the first region and the pad electrode in the second region is separated from the bonding member.

[0020] In order to solve the above problems, one aspect of the semiconductor light-emitting device according to the present disclosure includes the above-described semiconductor light-emitting element, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The front protruding portion includes a part of the pad electrode, and the pad electrode included in the front protruding portion is separated from the bonding member.

[0021] In order to solve the above problems, one aspect of the method for manufacturing a semiconductor light-emitting element according to the present disclosure is a method for manufacturing an end-face light-emitting type semiconductor light-emitting element that has a waveguide between a front end face and a rear end face and emits light from the front end face. The manufacturing method includes the following steps: a step of forming a semiconductor laminate having the waveguide; a step of forming a first P-side electrode above the semiconductor laminate; a step of forming a pad electrode above the first P-side electrode; and a step of forming the front end face and the rear end face. On the upper surface of the semiconductor light-emitting element and above the waveguide of the semiconductor light-emitting element, there are formed: a front bottom that extends rearward from the front end face; a rear bottom disposed behind the front bottom; a front protruding portion disposed between the front bottom and the rear bottom and protruding upward with respect to the front bottom and the rear bottom; and a rear protruding portion disposed behind the rear bottom and protruding upward with respect to the front bottom and the rear bottom. The pad electrode is not disposed on the front bottom, and the rear protruding portion includes at least a part of the pad electrode.

[0022] In order to solve the above problems, one aspect of the method for manufacturing a semiconductor light-emitting device according to the present disclosure is a method for manufacturing a semiconductor light-emitting device including the semiconductor light-emitting element, a heat sink, and a bonding member, and includes: the above-described method for manufacturing a semiconductor light-emitting element, and a step of bonding the upper surface of the semiconductor light-emitting element to the heat sink using the bonding member.

[0023] Advantageous Effects of the Invention

[0024] According to the present disclosure, in a semiconductor light-emitting element that emits light from a front end face, it is possible to suppress a decrease in heat dissipation characteristics and suppress light from being blocked at the front end face. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a top view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 1.

[0026] Figure 2 It is a first cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 1.

[0027] Figure 3It is a second cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 1.

[0028] Figure 4 It is a third cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 1.

[0029] Figure 5 It is a fourth cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 1.

[0030] Figure 6 It is a cross-sectional view schematically showing the configuration of the N-type semiconductor layer according to Embodiment 1.

[0031] Figure 7 It is a cross-sectional view schematically showing the configuration of the active layer according to Embodiment 1.

[0032] Figure 8 It is a cross-sectional view schematically showing the configuration of the second etch stop layer according to Embodiment 1.

[0033] Fig. 9 It is a plan view schematically showing the overall configuration of the semiconductor light-emitting device according to Embodiment 1.

[0034] Fig.10 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device according to Embodiment 1.

[0035] Fig.11 It is a cross-sectional view showing the configuration of the semiconductor light-emitting device including the semiconductor light-emitting element of the comparative example.

[0036] Fig.12 It is a cross-sectional view schematically showing the first step of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0037] Fig.13 It is a first cross-sectional view schematically showing the second step of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0038] Fig.14 It is a second cross-sectional view schematically showing the second step of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0039] Fig.15 It is a first cross-sectional view schematically showing the third step of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0040] Fig.16 It is a second cross-sectional view schematically showing the third step of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0041] Fig.17 It is a first cross-sectional view schematically showing the fourth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0042] Fig.18 It is a second cross-sectional view schematically showing the fourth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0043] Fig.19 It is a first cross-sectional view schematically showing the fifth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0044] Fig. 20 It is a second cross-sectional view schematically showing the fifth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0045] Fig.21 It is a first cross-sectional view schematically showing the sixth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0046] Fig. 22 It is a second cross-sectional view schematically showing the sixth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0047] Fig.23 It is a cross-sectional view schematically showing the seventh process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0048] Fig.24 It is a first cross-sectional view schematically showing the eighth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0049] Fig.25 It is a second cross-sectional view schematically showing the eighth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0050] Fig.26 It is a first cross-sectional view schematically showing the ninth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0051] Fig. 27 It is a second cross-sectional view schematically showing the ninth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0052] Fig.28 It is a third cross-sectional view schematically showing the ninth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0053] Fig.29 It is a first cross-sectional view schematically showing the tenth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0054] Fig.30 It is a second cross-sectional view schematically showing the tenth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0055] Fig.31 It is a third cross-sectional view schematically showing the tenth process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0056] Fig.32 It is a perspective view schematically showing the configuration of the substrate material according to Embodiment 1.

[0057] Fig.33 It is a perspective view schematically showing the cleavage process of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0058] Fig.34 It is a perspective view schematically showing the formation process of the cover film of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0059] Fig.35 It is a cross-sectional view schematically showing the formation process of the cover film of the manufacturing method of the semiconductor light-emitting element according to Embodiment 1.

[0060] Fig.36 It is a flowchart showing the manufacturing method of the semiconductor light-emitting device according to Embodiment 1.

[0061] Fig.37 It is a diagram showing respective configuration examples of the contact layer, the P-type cladding layer, and the active layer of the example.

[0062] Fig.38 It is a diagram showing respective configuration examples of the N-type semiconductor layer and the substrate of the example.

[0063] Fig.39 It is a diagram showing respective configuration examples of the contact layer, the P-type cladding layer, and the active layer of Example 2.

[0064] Fig.40 It is a diagram showing respective configuration examples of the N-type semiconductor layer and each layer of the substrate of Example 2.

[0065] Fig.41 It is a top view schematically showing the configuration of the front protruding portion of the semiconductor light-emitting element according to Embodiment 2.

[0066] Fig.42 It is a first cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device according to Embodiment 2.

[0067] Fig.43It is a second cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device according to Embodiment 2.

[0068] Fig.44 It is a top view schematically showing a first configuration example of the front protruding portion according to Embodiment 2.

[0069] Fig.45 It is a top view schematically showing a second configuration example of the front protruding portion according to Embodiment 2.

[0070] Fig.46 It is a top view schematically showing a third configuration example of the front protruding portion according to Embodiment 2.

[0071] Fig.47 It is a top view schematically showing a fourth configuration example of the front protruding portion according to Embodiment 2.

[0072] Fig.48 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 3.

[0073] Fig.49 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device according to Embodiment 3.

[0074] Fig.50 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to a modified example of Embodiment 3.

[0075] Fig.51 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device according to a modified example of Embodiment 3.

[0076] Fig.52 It is a top view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 4.

[0077] Fig.53 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device according to Embodiment 4.

[0078] Fig.54 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 5.

[0079] Fig.55 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 6.

[0080] Fig.56 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to Embodiment 7.

[0081] Fig.57It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device according to Embodiment 7.

[0082] Fig.58 It is a diagram showing the first step in the method of forming the pad electrode of the semiconductor light-emitting element according to Embodiment 7.

[0083] Fig.59 It is a diagram showing the second step in the method of forming the pad electrode of the semiconductor light-emitting element according to Embodiment 7.

[0084] Fig.60 It is a diagram showing the third step in the method of forming the pad electrode of the semiconductor light-emitting element according to Embodiment 7.

[0085] Fig.61 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element according to the modified example of Embodiment 7. Detailed Embodiments

[0086] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, all the embodiments to be described below are specific examples showing the present disclosure. Therefore, the numerical values, shapes, materials, constituent elements, and the arrangement positions and connection forms of the constituent elements shown in the following embodiments are all examples, and the gist thereof is not to limit the present disclosure.

[0087] Moreover, each figure is a schematic diagram and not a rigorous illustration. Therefore, the scales and the like in each figure are not necessarily the same. In addition, the same reference numerals are given to substantially the same configurations in each figure, and repeated explanations are omitted or simplified.

[0088] In addition, in this specification, terms indicating the relationship between elements such as equality, and terms indicating the shape of elements such as flat, parallel, perpendicular, plate-like, and curved surface-like, as well as numerical ranges, not only represent expressions with rigorous meanings, but also mean substantially equivalent ranges, for example, it may mean including a difference of about a few percent.

[0089] In the specification, terms such as "above" and "below" do not refer to the upward direction (vertically above) and the downward direction (vertically below) in the absolute space recognition, but are used as terms defined by the relative positional relationship based on the stacking order in the stacking structure. In addition, terms such as "above" and "below" can be applied not only to the case where two constituent elements are arranged at intervals and there are other constituent elements between the two constituent elements, but also to the case where the two constituent elements are arranged in contact with each other.

[0090] Also, in this specification, the terms "front" and "rear" used with respect to position do not refer to "front" and "rear" in absolute space recognition, but are also used as terms defined by relative positional relationships when based on the propagation direction of light emitted from the semiconductor light-emitting element. That is, the propagation direction of light emitted from the semiconductor light-emitting element is defined as forward, and the direction opposite to the light propagation direction is defined as backward, and the terms "front" and "rear" are used in the description of the relative positions of each component such as the semiconductor light-emitting element.

[0091] (Embodiment 1)

[0092] The semiconductor light-emitting element, semiconductor light-emitting device, and their manufacturing methods according to Embodiment 1 will be described.

[0093] [1-1. Overall Configuration of Semiconductor Light-Emitting Element]

[0094] First, use Figures 1 to 5 to describe the overall configuration of the semiconductor light-emitting element according to this embodiment. Figure 1 is a top view schematically showing the overall configuration of the semiconductor light-emitting element 1 according to this embodiment. Figures 2 to 5 is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element 1 according to this embodiment. In Figure 2 , Figure 3 and Figure 4 respectively show the cross-sections of the semiconductor light-emitting element 1 at the II-II line, III-III line, and IV-IV line of Figure 1 . And, Figure 5 only shows the cross-section of the semiconductor light-emitting element 1 passing through the optical axis Ax (coinciding with the central axis of the waveguide of the semiconductor light-emitting element) shown in Figure 1 (a cross-section parallel to the YZ plane of Figure 1 ) including a part of the front end face 1F. And, the X-axis, Y-axis, and Z-axis orthogonal to each other are shown in each figure. The X-axis, Y-axis, and Z-axis are an orthogonal coordinate system of a right-handed coordinate system. The stacking direction of the semiconductor light-emitting element 1 (i.e., the thickness direction of each layer included in the semiconductor light-emitting element 1) is parallel to the Z-axis direction, and the main propagation direction of light (laser beam) is parallel to the Y-axis direction.

[0095] The semiconductor light-emitting element 1 is an end-face light-emitting type semiconductor light-emitting element that has a waveguide between a front end face 1F and a rear end face 1R and emits light from the front end face 1F. In the present embodiment, the semiconductor light-emitting element 1 is a semiconductor laser element that emits a laser beam in the near-infrared wavelength range (about 900 nm or more and 980 nm or less). More specifically, the semiconductor light-emitting element 1 emits a laser beam having a wavelength of about 976 nm, but is not limited thereto, and may also emit a laser beam in the blue wavelength range or the ultraviolet wavelength range. As Figure 1 shown, the front end face 1F and the rear end face 1R of the semiconductor light-emitting element 1 form a resonator. The front end face 1F is an end face that emits light, and the rear end face 1R is an end face having a higher reflectivity than the front end face 1F. Although the resonator length of the semiconductor light-emitting element 1, that is, the distance between the front end face 1F and the rear end face 1R in the light propagation direction (the Y-axis direction in each figure, i.e., the oscillation direction), is not particularly limited, it is 0.5 mm or more in the present embodiment. The semiconductor light-emitting element 1 includes covering films 2F and 2R disposed at the ends in the light propagation direction. The covering films 2F and 2R are films for adjusting the reflectivities of the front end face 1F and the rear end face 1R, respectively. In the present embodiment, the covering films 2F and 2R are each a dielectric multilayer film. The reflectivity of the covering film 2F is lower than that of the covering film 2R.

[0096] As Figure 2 shown, the semiconductor light-emitting element 1 includes a substrate 10, a semiconductor laminate 1S, and an insulating film 60. In the present embodiment, the semiconductor light-emitting element 1 further includes a first P-side electrode 71, a pad electrode 73, a second P-side electrode 72, and an N-side electrode 80.

[0097] The substrate 10 is a plate-like member that serves as a base of the semiconductor light-emitting element 1. In the present embodiment, the substrate 10 is an N-type GaAs substrate. The substrate 10 has a pair of cleavage end faces 10C. The cleavage end faces 10C are cleavage surfaces formed when the substrate 10 is cleaved. The covering films 2F and 2R are respectively disposed on the pair of cleavage end faces 10C.

[0098] The semiconductor laminate 1S is a laminate having a waveguide disposed above the substrate 10. In the present embodiment, the semiconductor laminate 1S has an N-type semiconductor layer 20, an active layer 30, a P-type cladding layer 40, and a contact layer 50.

[0099] The N-type semiconductor layer 20 is an N-type semiconductor layer disposed above the substrate 10. The Figure 6 configuration of the N-type semiconductor layer 20 according to the present embodiment will be described. Figure 6 is a cross-sectional view schematically showing the configuration of the N-type semiconductor layer 20 according to the present embodiment. Figure 6 shows Figure 1Cross-section of the N-type semiconductor layer 20 at line II-II. As Figure 6 shown, the N-type semiconductor layer 20 has an N-type cladding layer 23. In the present embodiment, the N-type semiconductor layer 20 further has an N-type buffer layer 21 and an N-type buffer boundary layer 22.

[0100] The N-type buffer layer 21 is an N-type semiconductor layer disposed above the substrate 10. In the present embodiment, the N-type buffer layer 21 is an N-type GaAs layer doped with N-type impurities (Si) at a concentration of 3.0×10 17 cm -3 and having a film thickness of 0.50 μm.

[0101] The N-type buffer boundary layer 22 is an N-type semiconductor layer disposed between the N-type buffer layer 21 and the N-type cladding layer 23. In the present embodiment, the N-type buffer boundary layer 22 is an N-type Al 18 cm -3 doped with N-type impurities (Si) at a concentration of 2.0×10 and having a film thickness of 0.05 μm X22 Ga 1-X22 As layer (0.15 ≤ X22 ≤ 0.25). The Al composition ratio X22 of the N-type buffer boundary layer 22 increases as it approaches the N-type cladding layer 23. The Al composition ratio X22 of the N-type buffer boundary layer 22 is 0.15 at the interface with the N-type buffer layer 21 and 0.25 at the interface with the N-type cladding layer 23.

[0102] The N-type cladding layer 23 is an N-type semiconductor layer disposed above the substrate 10. The average refractive index of the N-type cladding layer 23 is lower than the average refractive index of the active layer 30. In the present embodiment, the N-type cladding layer 23 is disposed on the N-type buffer boundary layer 22. The N-type cladding layer 23 is an N-type Al 0.25 Ga 0.75 As layer with a film thickness of 3.1 μm. The impurity concentration of the N-type cladding layer 23 is 2.0×10 18 cm -3 in the region where the distance from the interface with the N-type buffer boundary layer 22 is 2.60 μm or less, 5.0×10 17 cm -3 in the region where the distance from the interface with the N-type buffer boundary layer 22 is greater than 2.60 μm and 3.00 μm or less, and 7.0×10 16 cm -3 in the region where the distance from the interface with the N-type buffer boundary layer 22 is greater than 3.00 μm and 3.10 μm or less.

[0103] The active layer 30 is a light-emitting layer disposed above the N-type semiconductor layer 20 (or the N-type cladding layer 23). In the present embodiment, the active layer 30 has a quantum well structure. Using Figure 7 The structure of the active layer 30 will be described. Figure 7 It is a cross-sectional view schematically showing the structure of the active layer 30 according to this embodiment. Figure 7 It shows Figure 1 a cross-section of the active layer 30 at the II-II line of Figure 7 . As shown, the active layer 30 has an N-side cladding boundary layer 31, an N-side guiding layer 32, an N-side barrier layer 33, a well layer 34, a P-side barrier layer 35, a P-side guiding layer 36, and a P-side cladding boundary layer 37.

[0104] As Figures 3 to 5 shown, the active layer 30 has a window region 30w (i.e., a non-light-emitting region) near the front end face 1F of the semiconductor light-emitting element 1. In the window region 30w, the quantum well structure including the N-side barrier layer 33, the well layer 34, and the P-side barrier layer 35 is disordered. And in the window region 30w, the bandgap energy is larger than that in the region other than the window region 30w of the active layer 30. Accordingly, the light emission and light absorption near the front end face 1F are suppressed, and thus the heat generation near the front end face 1F can be suppressed. Therefore, the COD (optical catastrophic damage) near the front end face 1F of the semiconductor light-emitting element 1 can be suppressed. In this embodiment, the active layer 30 also has a window region 30w near the rear end face 1R. The window region 30w is formed in the active layer 30 from the end on the front end face 1F side along the light propagation direction to a prescribed length. The length of the window region 30w in the light propagation direction can be equal to the length from the lower end position (in this embodiment, it is Figure 5 ) of the end on the front end face 1F side of the ridge R (refer to Figure 5 ) (the boundary position between the lower end of the groove portion Te shown and the ridge R) to the end on the front end face 1F side of the P-type cladding layer 40.

[0105] Figure 7 The N-side cladding boundary layer 31 shown is a semiconductor layer disposed above the N-type semiconductor layer 20 (refer to Figures 2 to 5 ). In this embodiment, the N-side cladding boundary layer 31 is an N-type Al X31 Ga 1-X31 As layer (0.25 ≥ X31 ≥ 0.20) with a film thickness of 0.83 μm disposed between the N-type cladding layer 23 and the N-side guiding layer 32. The Al composition ratio X31 of the N-side cladding boundary layer 31 decreases as it approaches the N-side guiding layer 32. The Al composition ratio X31 of the N-side cladding boundary layer 31 is 0.25 at the interface with the N-type cladding layer 23 and 0.20 at the interface with the N-side guiding layer 32. The concentration of the N-type impurity (Si) doped in the N-side cladding boundary layer 31 decreases as it approaches the N-side guiding layer 32. The N-type impurity concentration of the N-side cladding boundary layer 31 is 7.0×10 16cm -3 , at the boundary surface with the N-side guiding layer 32 is 5.0×10 16 cm -3 .

[0106] The N-side guiding layer 32 is a semiconductor layer disposed above the N-type semiconductor layer 20 (refer to Figures 2 to 5 ). The average refractive index of the N-side guiding layer 32 is higher than that of the N-type cladding layer 23. In the present embodiment, the N-side guiding layer 32 is disposed above the N-side cladding boundary layer 31. The N-side guiding layer 32 is an N-type Al 16 cm -3 film with a thickness of 0.27 μm doped with N-type impurities (Si) at a concentration of 5.0×10 0.20 Ga 0.80 As layer.

[0107] The N-side barrier layer 33 is a semiconductor layer that functions as a barrier of a quantum well structure disposed above the N-type semiconductor layer 20 (refer to Figures 2 to 5 ). In the present embodiment, the N-side barrier layer 33 is disposed above the N-side guiding layer 32. The N-side barrier layer 33 is an undoped Al 0.16 Ga 0.84 As layer with a thickness of 0.010 μm.

[0108] The well layer 34 is a semiconductor layer that functions as a well of a quantum well structure disposed above the N-type semiconductor layer 20 (refer to Figures 2 to 5 ). In the present embodiment, the well layer 34 is disposed above the N-side barrier layer 33. The well layer 34 is an undoped In 0.135 Ga 0.865 As layer with a thickness of 0.009 μm.

[0109] The P-side barrier layer 35 is a semiconductor layer that functions as a barrier of a quantum well structure disposed above the N-type semiconductor layer 20 (refer to Figures 2 to 5 ). In the present embodiment, the P-side barrier layer 35 is disposed above the well layer 34. The P-side barrier layer 35 is a P-type Al 16 cm -3 film with a thickness of 0.010 μm doped with P-type impurities (C (carbon)) at a concentration of 4.0×10 0.16 Ga 0.84 As layer.

[0110] The P-side guiding layer 36 is a semiconductor layer disposed above the N-type semiconductor layer 20 (refer to Figures 2 to 5 ). The average refractive index of the P-side guiding layer 36 is higher than that of the P-type cladding layer 40 (refer to Figures 2 to 5) has a high average refractive index. In the present embodiment, the P-side guiding layer 36 is disposed above the P-side barrier layer 35. The P-side guiding layer 36 is a P-type Al X36 Ga 1-X36 As layer (0.20 ≤ X36 ≤ 0.21). The Al composition ratio X36 of the P-side guiding layer 36 is 0.20 in a region where the distance from the interface between the P-side guiding layer 36 and the P-side barrier layer 35 is 0.01 μm or less. The Al composition ratio X36 of the P-side guiding layer 36 increases as it approaches the P-side cladding boundary layer 37 in a region where the distance from the interface between the P-side guiding layer 36 and the P-side barrier layer 35 is greater than 0.01 μm. The Al composition ratio X36 of the P-side guiding layer 36 is 0.21 at the interface with the P-side cladding boundary layer 37. The P-type impurity concentration of the P-side guiding layer 36 increases as it approaches the P-side cladding boundary layer 37. The P-type impurity concentration of the P-side guiding layer 36 is 4.0×10 16 cm -3 at the interface with the P-side barrier layer 35, and is 1.5×10 17 cm -3 .

[0111] The P-side cladding boundary layer 37 is a semiconductor layer disposed above the N-type semiconductor layer 20 (see Figures 2 to 5 ). In the present embodiment, the P-side cladding boundary layer 37 is a P-type Al with a thickness of 0.10 μm disposed between the P-side guiding layer 36 and the P-type cladding layer 40 (see Figures 2 to 5 ). X37 Ga 1-X37 As layer (0.21 ≥ X37 ≥ 0.75). The Al composition ratio X37 of the P-side cladding boundary layer 37 increases as it approaches the P-type cladding layer 40. The Al composition ratio X37 of the P-side cladding boundary layer 37 is 0.21 at the interface with the P-side guiding layer 36 and is 0.75 at the interface with the P-type cladding layer 40. The P-type impurity concentration of the P-side guiding layer 36 increases as it approaches the P-side cladding boundary layer 37. The P-type impurity concentration of the P-side cladding boundary layer 37 is 1.5×10 17 cm -3 at the interface with the P-side guiding layer 36, and is 5.0×10 17 cm -3 .

[0112] Figures 2 to 5 The P-type cladding layer 40 shown is a P-type semiconductor layer disposed above the active layer 30. The average refractive index of the P-type cladding layer 40 is lower than the average refractive index of the active layer 30. In the present embodiment, the P-type cladding layer 40 is made of Al X Ga 1-XIt is composed of As(0 < X < 1), and has a lower cladding layer 41, a first cladding layer 42, a first etch stop layer 43, a second cladding layer 44, and a second etch stop layer 45.

[0113] The lower cladding layer 41 is a P-type semiconductor layer disposed above the active layer 30. In the present embodiment, the lower cladding layer 41 is a P-type Al 18 cm -3 Ga 0.75 As layer with a film thickness of 0.050 μm doped with P-type impurities (C) at a concentration of 1.0×10 0.25 As layer.

[0114] The first cladding layer 42 is a P-type semiconductor layer disposed above the active layer 30. In the present embodiment, the first cladding layer 42 is a P-type Al 0.85 Ga 0.15 As layer with a film thickness of 0.10 μm disposed above the lower cladding layer 41.

[0115] The first etch stop layer 43 is a P-type semiconductor layer disposed above the active layer 30. In the present embodiment, the first etch stop layer 43 is disposed above the first cladding layer 42. The Al composition ratio of the first etch stop layer 43 is 0.7 or less. The first etch stop layer 43 is a P-type Al 18 cm -3 Ga 0.70 As layer with a film thickness of 0.05 μm doped with P-type impurities (C) at a concentration of 5.0×10 0.30 As layer.

[0116] The second cladding layer 44 is a P-type semiconductor layer disposed above the active layer 30. In the present embodiment, the second cladding layer 44 is a P-type Al 0.85 Ga 0.15 As layer with a film thickness of 0.20 μm disposed above the first etch stop layer 43.

[0117] In the present embodiment, regarding the Al composition ratio X0 of the lower cladding layer 41, the Al composition ratio X1 of the first cladding layer 42, and the Al composition ratio X2 of the second cladding layer 44, the following relationship holds:

[0118] X1 = X2 > 0.8 and X1 = X2 > X0.

[0119] The second etch stop layer 45 is a P-type semiconductor layer disposed above the active layer 30. In the present embodiment, the second etch stop layer 45 is a P-type Al X45 Ga 1-X45As layer (0.70 ≥ X45 ≥ 0.15). The second etch stop layer 45 has two or more inclined regions where the Al component ratio decreases as it approaches the contact layer, and one or more constant regions where the Al component ratio remains unchanged with respect to the stacking direction position. The two or more inclined regions and the one or more constant regions are alternately arranged in the stacking direction. Hereinafter, Figure 8 the configuration of the second etch stop layer 45 according to this embodiment will be described. Figure 8 FIG. is a cross-sectional view schematically showing the configuration of the second etch stop layer 45 according to this embodiment. Figure 8 Shows Figure 1 a cross-section of the second etch stop layer 45 on the ridge R at the II-II line of Figure 8 . As

[0120] shown, the second etch stop layer 45 has two inclined regions 45b and 45d, and two constant regions 45a and 45c.

[0120] The constant region 45a is a P-type Al 0.70 Ga 0.30 As layer with a film thickness of 0.050 μm disposed above the second cladding layer 44. The inclined region 45b is a P-type Al X45 Ga 1-X45 As layer with a film thickness of 0.01 μm disposed above the constant region 45a. The Al component ratio X45 of the inclined region 45b decreases as it approaches the contact layer 50. The Al component ratio X45 of the inclined region 45b is 0.70 at the boundary with the constant region 45a and 0.60 at the boundary with the constant region 45c. The constant region 45c is a P-type Al 0.60 Ga 0.40 As layer with a film thickness of 0.030 μm disposed above the inclined region 45b. The inclined region 45d is a P-type Al X45 Ga 1-X45 As layer with a film thickness of 0.010 μm disposed above the constant region 45c. The Al component ratio X45 of the inclined region 45d decreases as it approaches the contact layer 50. The Al component ratio X45 of the inclined region 45d is 0.60 at the boundary with the constant region 45c and 0.15 at the boundary with the contact layer 50. In this embodiment, the second etch stop layer 45 is doped with a P-type impurity (C) at a concentration of 5.0 × 10 18 cm -3 .

[0121] The contact layer 50 is a P-type semiconductor layer that is disposed above the P-type cladding layer 40 and is in ohmic contact with the first P-side electrode 71. In the present embodiment, the contact layer 50 is a P-type GaAs layer with a film thickness of 0.25 μm. The P-type impurity concentration of the contact layer 50 decreases as it moves away from the P-type cladding layer 40. The P-type impurity concentration of the contact layer 50 is 3.0×10 19 cm -3 at the interface with the P-type cladding layer 40 and 1.0×10 18 cm -3 .

[0122] As Figure 1 and Figure 2 shown, a ridge R extending in the light propagation direction is formed in the region including the P-type cladding layer 40 and the contact layer 50. A waveguide is formed along the ridge R. In addition, the upper surface contour of the ridge R is shown by a dotted line in Figure 1 .

[0123] As Figure 3 and Figure 5 shown, among the end portions of the ridge R in the light propagation direction, the upper surface of the semiconductor laminate 1S at the groove portion Te (the cross section at the III-III line) that is slightly behind the end portion closer to the front end face 1F of the emitted light of the semiconductor light-emitting element 1 is located at the second etch stop layer 45. That is, there is no contact layer 50 connected to the bonding member on the front end face 1F side with respect to the end portion of the ridge R closer to the front end face 1F. Therefore, no current is injected into the isolation region De and the window region 30w, and heat generation near the front end face 1F can be suppressed. Accordingly, since the bandgap shrinkage near the front end face 1F of the semiconductor light-emitting element 1 can be suppressed, the life of the semiconductor light-emitting element 1 can be improved. In addition, in the present embodiment, although there is the same ridge structure near the rear end face 1R of the semiconductor light-emitting element 1, there may not be the same structure near the rear end face 1R. However, if it exists on both sides, the effect will be greater.

[0124] In the present embodiment, a wing portion G extending along the ridge R and having the same height as the upper surface of the ridge R is formed in the region including the P-type cladding layer 40 and the contact layer 50. In other words, a groove portion T along the ridge R is formed between the wing portion G and the ridge R. In addition, the upper surface contour of the wing portion G is shown by a dotted line in Figure 1 . In the present embodiment, the ridge R is formed between the two wing portions G. Through such a wing portion G, when the semiconductor light-emitting element 1 is mounted on a mounting substrate or the like, the stress applied to the ridge R can be dispersed to the wing portion G.

[0125] In the present embodiment, the region including the P-type cladding layer 40 and the contact layer 50 has an isolation region De that is disposed between the end portion on the front end face 1F side of the semiconductor laminate 1S and the ridge R and is separated from the ridge R. In other words, as Figure 5 shown, a groove portion Te is formed between the ridge R and the isolation region De. In the present embodiment, a part of the P-type cladding layer 40 (a part of the second etch stop layer 45) and the contact layer 50 are removed in the groove portion Te.

[0126] Moreover, as Figure 1 and Figure 4 shown, the isolation region De is disposed between the two wing portions G. And the isolation region De is connected to the two wing portions G. In other words, the upper surface of the contact layer 50 at the end portion of the semiconductor laminate 1S in the light propagation direction is continuous and flat in the entire width direction (i.e., the X-axis direction) of the contact layer 50. In addition, this structure may not be present near the rear end face 1R, but the effect is greater when it is present on both sides.

[0127] Thus, at the end portion of the semiconductor laminate 1S according to the present embodiment in the light propagation direction, since the contact layer 50 and the second etch stop layer 45 cover the second cladding layer 44 having a high Al composition ratio and the like, oxidation and erosion of the second cladding layer 44 and the like can be suppressed. By suppressing the oxidation and erosion of the second cladding layer 44 having a high Al composition ratio, the adhesion between the semiconductor laminate including these layers and the insulating film 60 can be improved.

[0128] Moreover, when the semiconductor light-emitting element 1 is singulated, since it is cleaved at positions corresponding to the front end portion and the rear end portion of the semiconductor laminate 1S, if the adhesion between the contact layer 50 and the insulating film 60 is low, the insulating film 60 may peel off. However, in the semiconductor light-emitting element 1 according to the present embodiment as described above, since the adhesion between the insulating film 60 and the contact layer 50 at positions corresponding to the front end portion and the rear end portion of the semiconductor laminate 1S can be improved, peeling of the insulating film 60 can be suppressed.

[0129] A recess 3 that is recessed in the width direction of the semiconductor light-emitting element 1 (i.e., the end portion in the X-axis direction) is formed at the end portion in the width direction of the semiconductor light-emitting element 1. The recess 3 is formed outside the wing portion G in the X-axis direction. The recess 3 is a part of the separation groove used when the semiconductor light-emitting element 1 is singulated. As Figures 2 to 4 shown, the portion of the side surface of the semiconductor light-emitting element 1 corresponding to the recess 3 is indented inward in the X-axis direction.

[0130] Regarding the position of the recess 3 in the width direction of the semiconductor light-emitting element 1, it is located at the innermost side in the width direction (i.e., close to the ridge R) in the P-type cladding layer 40. That is to say, the recess 3 is the most indented part in the P-type cladding layer 40. Regarding the position of the recess 3 in the width direction of the semiconductor light-emitting element 1, as it approaches the substrate 10 from the active layer 30, it gradually approaches the outside in the width direction of the semiconductor light-emitting element 1 (i.e., in the direction away from the ridge R).

[0131] The insulating film 60 is an electrically insulating film disposed above the P-type cladding layer 40. As Figure 7 shown, the insulating film 60 continuously covers from the side surface of the ridge R to a part of the upper surface of the ridge R. In the present embodiment, an opening 60a is formed at a position corresponding to the upper surface of the ridge R in the insulating film 60. Current is injected from the first P-side electrode 71 into the contact layer 50 via the opening 60a. That is, the opening 60a is a window region for injecting current into the contact layer 50. The entire upper surface of the semiconductor laminate formed on the substrate 10 except for the opening 60a is covered by the insulating film 60. Accordingly, current inflow into regions other than the ridge R can be suppressed.

[0132] And, as Figure 5 shown, the first P-side electrode 71 continuously covers from the upper surface of the isolation region De to the upper surface of the ridge R including the bottom surface and two side surfaces of the groove portion Te. The insulating film 60 continuously covers from the upper surface of the isolation region De to a part of the upper surface of the ridge R including the bottom surface and two side surfaces of the groove portion Te. Therefore, current is not injected from the first P-side electrode 71 formed on the upper surface of the ridge R into the isolation region De. Since the pad electrode 73 has the function of injecting current into the first P-side electrode 71 on the ridge, the pad electrode 73 above the waveguide region of the semiconductor laminate 1S can be positioned near the groove portion Te at the end portion on the front end surface 1F side. Moreover, since no current is injected into the isolation region De and the window region 30w, heat generation near the front end surface 1F can be suppressed. Accordingly, since the bandgap shrinkage near the front end surface 1F of the semiconductor light-emitting element 1 can be suppressed, the lifetime of the semiconductor light-emitting element 1 can be improved.

[0133] The material of the insulating film 60 is not particularly limited as long as it has electrical insulation properties. In the present embodiment, the insulating film 60 is a silicon nitride film with a film thickness of 100 nm.

[0134] The first P-side electrode 71 is a conductive layer disposed above the semiconductor laminate. In the present embodiment, the first P-side electrode 71 is disposed above the contact layer 50. As Figure 2 and Figure 3As shown, the first P-side electrode 71 is in contact with the contact layer 50 on the upper surface of the ridge R. The first P-side electrode 71 continuously covers from the upper surface of one wing G to the upper surface of the other wing G. The material of the first P-side electrode 71 has no special limitation as long as it has conductivity. For example, the first P-side electrode 71 includes a Ti film with a thickness of 50 nm, a Pt film with a thickness of 150 nm, and an Au film with a thickness of 100 nm or more and 300 nm or less, which are laminated in sequence starting from the contact layer 50 side. In the present embodiment, the thickness of the Au film included in the first P-side electrode 71 is 200 nm.

[0135] Figure 2 , Figure 3 , and Figure 5 The pad electrode 73 shown is a pad-shaped conductive layer disposed above the first P-side electrode 71. In the present embodiment, the pad electrode 73 has eaves portions 73a at the X-axis direction end and the Y-axis direction end. The eaves portion 73a is a portion that protrudes outward in the X-axis direction and the Y-axis direction at the upper end of the X-axis direction end of the pad electrode 73. The constitution of the pad electrode 73 has no special limitation. The thickness of the pad electrode 73 is, for example, 1.5 μm or more and 4.0 μm or less. In the present embodiment, the pad electrode 73 is a gold-plated film with a thickness of 2.5 μm.

[0136] Figures 2 to 5 The second P-side electrode 72 shown is a conductive layer disposed above the first P-side electrode 71 and the pad electrode 73. The second P-side electrode 72 may also be disposed in a region where the pad electrode 73 is not disposed on the upper surfaces of the first P-side electrode 71 and the insulating film 60. The constitution of the second P-side electrode 72 has no special limitation. For example, the second P-side electrode 72 may have a barrier layer including at least one of Ti, Pt, and Cr. Accordingly, it is possible to suppress the spread of Sn element, oxygen, etc. from the outside of the second P-side electrode 72 to the pad electrode 73 and the first P-side electrode 71 via the second P-side electrode 72. Therefore, it is possible to suppress the increase in resistance due to the deterioration of the first P-side electrode 71. In the present embodiment, the second P-side electrode 72 includes a Ti film with a thickness of 50 nm, a Pt film with a thickness of 150 nm, and an Au film with a thickness of 100 nm or more and 300 nm, which are laminated in sequence starting from the pad electrode 73 side. In the present embodiment, the thickness of the Au film included in the second P-side electrode 72 is 200 nm.

[0137] Figure 2 , Figure 3 , and Figure 5The N-side electrode 80 shown is a conductive layer disposed on the lower main surface of the substrate 10 (i.e., the back surface of the main surface of the substrate 10 on which the semiconductor layer is laminated). The configuration of the N-side electrode 80 is not particularly limited. In the present embodiment, the N-side electrode 80 includes an AuGe film with a film thickness of 90 nm, a Ni film with a film thickness of 20 nm, an Au film with a film thickness of 50 nm, a Ti film with a film thickness of 100 nm, a Pt film with a film thickness of 50 nm, a Ti film with a film thickness of 50 nm, a Pt film with a film thickness of 100 nm, and an Au film with a film thickness of 500 nm, which are laminated in order from the substrate 10 side.

[0138] In the present embodiment, as Figure 1 and Figure 5 shown, on the upper surface of the semiconductor light-emitting element 1, and above the optical axis Ax along which the semiconductor light-emitting element 1 emits light, a front bottom L1, a front protrusion H1, a rear bottom L2, and a rear protrusion H2 are formed. In other words, the semiconductor light-emitting element 1 has a front bottom L1, a front protrusion H1, a rear bottom L2, and a rear protrusion H2 located on the upper surface of the semiconductor light-emitting element 1 and above the waveguide along the optical axis Ax. The optical axis Ax is the axis along the waveguide formed by the ridge R. In addition, near the front end face 1F and the rear end face 1R where the ridge R is not formed, the region above the waveguide can be defined as, for example, the region above the region in the semiconductor laminate 1S that has the same width as the ridge R along the optical axis Ax. In the present embodiment, the optical axis Ax is located in the active layer 30 in the stacking direction (i.e., the Z-axis direction), and is located approximately at the center of the semiconductor light-emitting element 1 in the transverse direction (i.e., the X-axis direction) perpendicular to the stacking direction and the light propagation direction. In addition, the front bottom L1, the front protrusion H1, the rear bottom L2, and the rear protrusion H2 may not be arranged across the entire width direction (i.e., the X-axis direction) of the waveguide, and may be arranged only above a part of the width direction of the waveguide.

[0139] The front bottom L1 is a part of the upper surface of the semiconductor light-emitting element 1 and extends rearward from the front end face 1F. In the present embodiment, as Figure 5 shown, on the front bottom L1, although the first P-side electrode 71 and the second P-side electrode 72 are disposed on the semiconductor laminate 1S, the pad electrode 73 is not disposed. And the cover film 2F is continuously disposed from the cleavage end face 10C via the front bottom L1 to the front face (i.e., the front end face) of the front protrusion H1. In addition, in Figure 1 in order to prevent the figure from being complicated, the illustration of the cover films 2F and 2R disposed on the upper surface of the semiconductor light-emitting element 1 is omitted.

[0140] The rear bottom L2 is a part of the upper surface of the semiconductor light-emitting element 1 and is disposed behind the front bottom L1. In the present embodiment, as Figure 5As shown, at the rear bottom L2, although the first P-side electrode 71 and the second P-side electrode 72 are disposed on the semiconductor laminate 1S, the pad electrode 73 is not disposed. Also, the cover film 2F is not disposed at the rear bottom L2.

[0141] Also, the cover film 2F is not disposed on the upper surface of the front protruding portion H1, and the cover film 2F is not disposed on the rear surface (i.e., the rear end surface) of the front protruding portion H1.

[0142] The front protruding portion H1 is a portion disposed between the front bottom L1 and the rear bottom L2 and protruding upward with respect to the front bottom L1 and the rear bottom L2. In the present embodiment, as Figure 5 shown, at the front protruding portion H1, the first P-side electrode 71, the pad electrode 73, and the second P-side electrode 72 are disposed on the semiconductor laminate 1S. That is, the front protruding portion H1 according to the present embodiment includes a part of each of the first P-side electrode 71, the pad electrode 73, and the second P-side electrode. Thus, since the front protruding portion H1 includes a part of the pad electrode 73, it protrudes upward compared to the front bottom L1 and the rear bottom L2 that do not include the pad electrode 73.

[0143] The pad electrode 73 included in the front protruding portion H1 has an eaves-like portion 73a at the end in the Y-axis direction. Also, the pad electrode 73 included in the front protruding portion H1 has an inverted trapezoidal shape in a cross section parallel to the YZ plane. That is, the width of the pad electrode 73 in the Y-axis direction gradually increases as it moves away from the semiconductor laminate 1S. Due to the pad electrode 73 having such a shape, the second P-side electrode 72 formed on the pad electrode 73 is not continuous between the front protruding portion H1, the front bottom L1, and the rear bottom L2. That is, the second P-side electrode 72 is not disposed on the side surface (end surface in the Y-axis direction) of the pad electrode 73.

[0144] The rear protruding portion H2 is a portion disposed behind the rear bottom L2 and protruding upward with respect to the front bottom L1 and the rear bottom L2. As Figure 5 shown, at the rear protruding portion H2, the first P-side electrode 71, the pad electrode 73, and the second P-side electrode 72 are disposed on the semiconductor laminate 1S. That is, the rear protruding portion H2 according to the present embodiment includes a part of each of the first P-side electrode 71, the pad electrode 73, and the second P-side electrode. Thus, by the rear protruding portion H2 including a part of the pad electrode 73, it protrudes upward compared to the front bottom L1 and the rear bottom L2 that do not include the pad electrode 73.

[0145] The rear protruding portion H2 is arranged so as to cover the groove portion Te. By covering the groove portion Te, it is possible not only to prevent the spread of cracks that easily occur at the corners of the thin films (insulating film 60 and first P-side electrode 71) arranged on the groove portion Te due to moisture in the air or the like, but also to suppress the breakage of the semiconductor laminate starting from the groove portion Te.

[0146] The pad electrode 73 included in the rear protruding portion H2, similar to the pad electrode 73 included in the front protruding portion H1, has an eaves-like portion 73a at the end in the Y-axis direction. And, the pad electrode 73 included in the rear protruding portion H2 has an inverted trapezoidal shape in a cross-section parallel to the YZ plane. With the pad electrode 73 having such a shape, the second P-side electrode 72 formed on the pad electrode 73 by vapor deposition or the like is discontinuous between the rear protruding portion H2 and the rear bottom L2. That is, the second P-side electrode 72 is not formed on the side surface (end surface in the Y-axis direction) of the pad electrode 73. Also, a covering film 2F is not arranged on the rear protruding portion H2.

[0147] In the present embodiment, the front bottom L1 and the front protruding portion H1 are arranged continuously. That is, the front bottom L1 and the front protruding portion H1 are in contact. Similarly, the front protruding portion H1 and the rear bottom L2 are arranged continuously, and the rear bottom L2 and the rear protruding portion H2 are arranged continuously. Also, the heights of the front bottom L1 and the rear bottom L2 (i.e., the positions of the upper surfaces in the Z-axis direction) are the same, and the heights of the front protruding portion H1 and the rear protruding portion H2 are the same. The heights (i.e., the dimensions in the Z-axis direction) at which the front protruding portion H1 and the rear protruding portion H2 are spaced apart from the front bottom L1 or the rear bottom L2 are, for example, 1.5 μm or more and 4.0 μm or less.

[0148] Also, the length of the front bottom L1 in the optical axis Ax direction can be shorter than the length of the rear bottom L2 in the optical axis Ax direction and can be longer than the length of the front protruding portion H1 in the optical axis Ax direction. For example, the length of the front bottom L1 (in the present embodiment, the distance from the front end face 1F to the front protruding portion H1) can be 3 μm or more and 7 μm or less.

[0149] In the present embodiment, the structure of the upper surface of the semiconductor light-emitting element 1 in the region near the rear end face 1R is the same as the structure in the region near the front end face 1F. That is, the structure of the region near the rear end face 1R has a structure that passes through the center in the Y-axis direction of the semiconductor light-emitting element 1 and is symmetric with respect to a plane parallel to the XZ plane. In addition, the structure near the rear end face 1R is not limited thereto. For example, the structure corresponding to the front protruding portion H1 may not be provided near the rear end face 1R.

[0150] Also, in the present embodiment, although the semiconductor light-emitting element 1 having window regions 30w near the front end face 1F and near the rear end face 1R is exemplified, the same effect can be achieved even in the case of a semiconductor light-emitting element without a window region. In this case, the configuration of the semiconductor light-emitting element except for the window region 30w is the same as that of the semiconductor light-emitting element 1 according to the present embodiment.

[0151] [1-2. Overall Configuration of Semiconductor Light-Emitting Device]

[0152] Using Fig. 9 and Fig.10 The overall configuration of the semiconductor light-emitting device according to the present embodiment will be described. Fig. 9 and Fig.10 are a plan view and a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device 5 according to the present embodiment, respectively. Fig.10 Only the cross-section of the semiconductor light-emitting device 5 through the Fig. 9 shown optical axis Ax (a cross-section parallel to the YZ plane of Fig. 9 ) including a part of the front end face 1F is shown.

[0153] As Fig. 9 and Fig.10 shown, the semiconductor light-emitting device 5 according to the present embodiment includes a semiconductor light-emitting element 1, a heat sink 7, and a bonding member 9. In the present embodiment, the semiconductor light-emitting device 5 further includes a conductive layer 8.

[0154] The heat sink 7 is a base on which the semiconductor light-emitting element 1 is mounted and has a function of dissipating heat emitted from the semiconductor light-emitting element 1. The material forming the heat sink 7 is not particularly limited as long as it has a high thermal conductivity. In the present embodiment, the heat sink 7 is an AlN substrate.

[0155] The conductive layer 8 is a conductive member disposed on the main surface of the heat sink 7. In the present embodiment, the conductive layer 8 has a first conductive layer 81 disposed on the main surface of the heat sink 7 and a second conductive layer 82 covering the first conductive layer 81 as Fig.10 shown. The first conductive layer 81 is formed of Cu, for example. The second conductive layer 82 is a multilayer film formed by laminating a Ni layer, a Pt layer, and an Au layer on the first conductive layer 81 side in this order, for example.

[0156] In addition, the cleavage end face 10C is located in front of the end portion of the conductive layer 8 in the direction of the optical axis Ax. Accordingly, it is possible to suppress the light emitted from the semiconductor light-emitting element 1 from being blocked by the conductive layer 8. However, if the distance D4 between the end portion of the conductive layer 8 in the direction of the optical axis Ax and the cleavage end face 10C is too large, it becomes difficult for the bonding member 9 to reach the vicinity of the front end face 1F, which may cause a decrease in the heat dissipation characteristics of the semiconductor light-emitting element 1. For this reason, the distance D4 may be greater than 1 μm and less than 10 μm. Accordingly, it is possible to suppress the light from being blocked by the conductive layer 8 and to suppress a decrease in the heat dissipation characteristics of the semiconductor light-emitting element 1.

[0157] The bonding member 9 is a member that bonds the upper surface of the semiconductor light-emitting element 1 to the heat sink 7. In the present embodiment, the bonding member 9 is arranged on the conductive layer 8 as Fig.10 shown and is bonded to the heat sink 7 via the conductive layer 8. The bonding member 9 is, for example, an AuSn solder.

[0158] The bonding member 9 mainly bonds to the second P-side electrode 72 among the semiconductor light-emitting element 1. In the present embodiment, the bonding member 9 is arranged from the second P-side electrode 72 included in the front protrusion H1 to the second P-side electrode 72 included in the rear protrusion H2. And, the bonding member 9 bonds to the second P-side electrodes 72 included in the front bottom L1, the front protrusion H1, the rear bottom L2, and the rear protrusion H2 of the semiconductor light-emitting element 1, respectively. Since the semiconductor light-emitting element 1 is pressed against the heat sink 7 for bonding, the bonding member 9 extends beyond the front protrusion H1 to Fig.10 the left side, and on the front bottom L1, a rounded corner portion is formed on the bonding member 9. The rounded corner portion gradually decreases in height (the height on the positive side of the Z-axis direction) as it gradually extends toward the front end face 1F side from the upper surface of the front protrusion H1. The surface of the bonding member 9 on the rounded corner portion may be a concave curved surface. And, the bonding member 9 extends beyond the end portion on the front end face 1F side of the conductive layer 8, and a part of the extended portion covers a part of the side face on the front end face 1F side of the conductive layer 8. In the bonding member 9, the rounded corner portion and the portion covering the front end face side of the conductive layer are continuously connected, and as Fig.10 shown, the maximum height of the rounded corner portion is higher than the height of the front protrusion H1. In other words, the bonding member 9 may completely cover the front protrusion.

[0159] [1-3. Effects]

[0160] The effects of the semiconductor light-emitting element 1 and the semiconductor light-emitting device 5 according to the present embodiment will be described while comparing with the semiconductor light-emitting element and the semiconductor light-emitting device of the comparative example. Fig.11 FIG. is a cross-sectional view showing the configuration of a semiconductor light-emitting device 905 including a semiconductor light-emitting element 901 of the comparative example. Fig.11A part of a cross section parallel to the stacking direction of the semiconductor stack 1S of the semiconductor light-emitting element 901 through the optical axis Ax of the semiconductor light-emitting element 901 is shown.

[0161] The semiconductor light-emitting element 901 of the comparative example is different from the semiconductor light-emitting element 1 according to the present embodiment in that the pad electrode 73 is arranged from near the front end face 1F to near the rear end face 1R ( Fig.11 not shown in the figure), and the other parts are the same.

[0162] In the semiconductor light-emitting device 905 including such a semiconductor light-emitting element 901 of the comparative example, the Au pad electrode 73 is arranged all the way to the front end of the semiconductor stack 1S, and the pad electrode 73 is joined to the joining member 9 and the heat sink 7 via the second P-side electrode 72. In such a semiconductor light-emitting device 905, since the heat generated near the front end face 1F can be dissipated to the heat sink 7 via each electrode and the joining member 9, the heat dissipation characteristics are good.

[0163] Generally, the end face of the semiconductor light-emitting element 901 of the comparative example is formed by forming the semiconductor stack 1S, the first P-side electrode 71, the pad electrode 73, and the second P-side electrode 72 on a wafer which is the material of the substrate 10, and then splitting the wafer. And, by forming a covering film 2F on the split end face of the substrate 10 (and the semiconductor stack 1S) formed by splitting, the front end face 1F is formed. Thus, when the pad electrode 73 is formed all the way to the vicinity of the front end face 1F which is the light-emitting end face, the melted joining member will go beyond the front end face 1F of the semiconductor light-emitting element 1 and spread, resulting in the problem that a part of the light-emitting surface is covered. In this case, the light emitted from the front end face 1F may be blocked by the joining member.

[0164] In contrast, in the semiconductor light-emitting element 1 according to the present embodiment, a front bottom L1 extending rearward from the front end face 1F, a rear bottom L2 arranged behind the front bottom L1, a front convex portion H1 arranged between the front bottom L1 and the rear bottom L2 and protruding upward with respect to the front bottom L1 and the rear bottom L2, and a rear convex portion H2 arranged behind the rear bottom L2 and protruding upward with respect to the front bottom L1 and the rear bottom L2 are formed on the upper surface of the semiconductor light-emitting element 1 and above the optical axis Ax. The pad electrode 73 is not arranged on the front bottom L1, and the rear convex portion H2 includes at least a part of the pad electrode 73.

[0165] Thus, since the semiconductor light-emitting element 1 according to the present embodiment has the front bottom L1 near the front end face 1F where the pad electrode 73 is not disposed, there is no problem that the melted bonding member protrudes beyond the front end face 1F of the semiconductor light-emitting element 1 and spreads. Therefore, it is possible to suppress the light from being blocked by the bonding member 9.

[0166] Moreover, in the semiconductor light-emitting element 1 according to the present embodiment, since the front protruding portion H1 is formed, it is possible to suppress the cover film 2F from being formed at a position behind the front face of the front protruding portion H1. Therefore, for example, when the semiconductor light-emitting element 1 is bonded to the heat sink 7 by the bonding member 9, it is possible to suppress a decrease in the wettability of the bonding member 9 due to the formation of the cover film 2F in a region other than the front face of the front protruding portion H1, the rear bottom L2, and the rear protruding portion H2. Accordingly, the bonding member 9 can be easily alloyed with the respective electrodes such as the front protruding portion H1, the rear bottom L2, and the rear protruding portion H2. For example, when the bonding member 9 is an AuSn solder, it is easily alloyed with the Au of each electrode. For this reason, the bonding member 9 sufficiently covers from the rear protruding portion H2 to the upper surface of the front protruding portion H1. Accordingly, the bonding member 9 is further disposed from the upper surface of the front protruding portion H1 to the front bottom L1 to form a rounded portion. Therefore, through this rounded portion, the heat generated near the front end face 1F can be easily dissipated to the heat sink 7, thereby suppressing a decrease in the heat dissipation characteristics of the semiconductor light-emitting element 1 and the semiconductor light-emitting device 5 including the semiconductor light-emitting element 1.

[0167] Moreover, the semiconductor light-emitting element 1 according to the present embodiment includes a cover film formed on the front end face 1F, the front bottom L1, and the front face of the front protruding portion H1, and the cover film 2F may not be formed on the rear face of the front protruding portion H1.

[0168] Accordingly, since it is possible to suppress a decrease in the wettability of the bonding member 9 with respect to the rear face of the front protruding portion H1, the respective electrodes included in the front protruding portion H1 can be easily alloyed with the bonding member 9. Therefore, it is easy to form a rounded portion of the bonding member 9 between the front protruding portion H1 and the front bottom L1.

[0169] Moreover, in the semiconductor light-emitting element 1 according to the present embodiment, the front protruding portion H1 may include a part of the pad electrode 73.

[0170] Accordingly, since the front protruding portion H1 and the rear protruding portion H2 including at least a part of the pad electrode 73 can be formed simultaneously, the manufacturing process of the front protruding portion H1 can be simplified.

[0171] Also, in the semiconductor light-emitting element 1 according to the present embodiment, the distance from the front end face 1F to the front protruding portion H1 may be 3 μm or more and 7 μm or less.

[0172] When this distance is too small, in the cleavage process generally included in the manufacturing process of the semiconductor light-emitting element 1, the pad electrode 73 included in the front protruding portion H1 is likely to be deformed. However, when this distance is too long, when the semiconductor light-emitting element 1 is mounted on a radiator 7 or the like, the bonding member 9 or the like is not easily reachable near the front end face 1F, and thus the heat dissipation characteristics of the semiconductor light-emitting element 1 are reduced. Therefore, by making this distance 3 μm or more and 7 μm or less, it is possible to more surely suppress the reduction of the heat dissipation characteristics and suppress the light from being blocked at the front end face.

[0173] Also, in the semiconductor light-emitting element 1 according to the present embodiment, the distance from the front protruding portion H1 to the rear protruding portion H2 may be 10 μm or more and 35 μm or less. In the present embodiment, it is 20 μm. When it is 20 μm, when the bonding member 9 made of an AuSn solder having a thickness of 4.0 μm is heated at a prescribed heating temperature for a prescribed time, when the bonding member 9 melts and spreads, it can span the front protruding portion H1 and the rear protruding portion H2.

[0174] The heating temperature of the bonding member 9 can be, for example, 320°C or more and 350°C or less. Accordingly, by making the heating temperature 320°C or more, the bonding member 9 can be sufficiently melted and spread. And, by making the heating temperature 360°C or less, an excessive alloying reaction between the bonding member 9 and each electrode can be suppressed, and thus deformation of each electrode can be suppressed. Therefore, since non-uniform stress applied to the semiconductor light-emitting element 1 due to deformation of each electrode can be suppressed, a decrease in the deflection ratio and reliability of the semiconductor light-emitting element 1 can be suppressed. In the present embodiment, the heating temperature is 330°C.

[0175] The heating time of the bonding member 9 can be, for example, 3 seconds or more and 20 seconds or less. By making the heating time 3 seconds or more, the bonding member 9 can be sufficiently melted and spread. And, by making the heating time 20 seconds or less, an excessive alloying reaction between the bonding member 9 and each electrode can be suppressed, and thus deformation of each electrode can be suppressed. Therefore, since non-uniform stress applied to the semiconductor light-emitting element 1 accompanied by deformation of each electrode can be suppressed, a decrease in the deflection ratio and reliability of the semiconductor light-emitting element 1 can be suppressed. In the present embodiment, the heating time is 3 seconds.

[0176] Alternatively, the semiconductor light-emitting element 1 according to the present embodiment may include a second P-side electrode 72 disposed above the first P-side electrode 71 and the pad electrode 73, and the second P-side electrode 72 disposed at the front bottom L1 and the rear bottom L2 is separated from the pad electrode 73 included in the front protrusion H1.

[0177] When the bonding member 9 is bonded to the second P-side electrode 72, the bonding member 9 bonded to the second P-side electrode 72 of the rear protrusion H2 melts and spreads forward and protrudes from the rear protrusion H2, and also contacts the second P-side electrode 72 at the rear bottom L2. Then, the molten bonding member 9 spreads in the front-rear direction on the rear bottom L2, as Fig.10 shown, and can exhibit the effect of preventing the liquid from spreading at the boundary between the portion with high wettability and the portion with low wettability (so-called locking effect). Therefore, by such a configuration, the contact between the bonding member 9 and the pad electrode 73 can be suppressed. That is, the diffusion of Sn in the bonding member 9 into the pad electrode 73 included in the front protrusion H1 and the alloying with the pad electrode 73 included in the front protrusion H1 can be suppressed. Therefore, the reduction in heat dissipation characteristics due to the alloying of the pad electrode 73 included in the front protrusion H1 can be suppressed.

[0178] Alternatively, the semiconductor light-emitting element 1 according to the present embodiment may include a second P-side electrode 72 disposed above the first P-side electrode 71 and the pad electrode 73, and the second P-side electrode 72 has a barrier layer including at least one of Ti, Pt, and Cr.

[0179] Accordingly, the diffusion of impurities such as oxygen into the pad electrode 73 and the first P-side electrode 71 via the second P-side electrode 72 can be suppressed. Moreover, when a member containing an Sn element such as the bonding member 9 is bonded to the second P-side electrode 72, the diffusion of the Sn element into the pad electrode 73 and the first P-side electrode 71 via the second P-side electrode 72 can be more reliably suppressed. Therefore, the increase in resistance and the decrease in thermal conductivity due to the deterioration of the Au layer of the first P-side electrode 71 and the pad electrode 73 can be more reliably suppressed.

[0180] Moreover, the semiconductor light-emitting device 5 according to the present embodiment includes a semiconductor light-emitting element 1, a heat sink 7, and a bonding member 9 that bonds the upper surface of the semiconductor light-emitting element 1 to the heat sink 7. The semiconductor light-emitting element 1 includes a second P-side electrode 72 disposed above the first P-side electrode 71 and the pad electrode 73. The front protrusion H1 and the rear protrusion H2 may each include a part of the second P-side electrode 72, and the bonding member 9 may be disposed from the second P-side electrode 72 included in the front protrusion H1 to the second P-side electrode 72 included in the rear protrusion H2.

[0181] Accordingly, since the contact area between the bonding member 9 and the semiconductor light-emitting element 1 can be increased, the heat dissipation characteristics are improved. Further, since the non-uniformity of the shape of the melted bonding member 9 is reduced, stable heat dissipation characteristics can be obtained.

[0182] Moreover, in the semiconductor light-emitting device 5 according to the present embodiment, the semiconductor light-emitting element 1 includes a second P-side electrode 72 disposed above the first P-side electrode 71 and the pad electrode 73. The rear bottom L2 and the rear protrusion H2 may each include a part of the second P-side electrode 72, the rear protrusion H2 may include a part of the pad electrode 73, and the pad electrode 73 included in the rear protrusion H2 may be separated from the bonding member 9.

[0183] Accordingly, it is possible to suppress Sn in the bonding member 9 from diffusing into the pad electrode 73 and the pad electrode 73 from being alloyed. Therefore, it is possible to suppress an increase in the resistance of the pad electrode 73 and a decrease in the heat dissipation characteristics.

[0184] Moreover, it may also be that, in the semiconductor light-emitting device 5 according to the present embodiment, the pad electrode 73 included in the front protrusion H1 is separated from the bonding member 9.

[0185] Accordingly, since it is possible to suppress diffusion of Sn or the like in the bonding member 9 into the pad electrode 73, it is possible to suppress the pad electrode 73 from being alloyed, and thus it is possible to suppress a decrease in the heat dissipation characteristics due to the alloying of the pad electrode 73 included in the front protrusion H1.

[0186] Moreover, the first P-side electrode 71 may include an Au film having a film thickness of 100 nm or more and 300 nm or less as the uppermost layer.

[0187] In this way, since the film thickness of the Au film included in the first P-side electrode 71 is 100 nm or more, it is possible to suppress a shortage of Au that undergoes an alloying reaction with the bonding member 9 at the rear bottom L2. Therefore, it is possible to suppress the bonding member 9 from hardly crossing over the front protrusion H1 due to a shortage of Au that undergoes an alloying reaction with the bonding member 9 at the rear bottom L2.

[0188] Moreover, since the film thickness of the Au film included in the first P-side electrode 71 is 300 nm or less, it is possible to suppress a decrease in the cleavability in the cleavage step of the manufacturing method of the semiconductor light-emitting element 1 described later.

[0189] Moreover, the second P-side electrode 72 may contain an Au film having a film thickness of 100 nm or more and 300 nm or less as the uppermost layer.

[0190] Thus, since the film thickness of the Au film included in the second P-side electrode 72 is 100 nm or more, it is possible to suppress the shortage of Au that alloy-reacts with the bonding member 9 at the rear bottom L2. Therefore, it is possible to suppress the bonding member 9 from hardly crossing the front protrusion H1 due to the shortage of Au that alloy-reacts with the bonding member 9 at the rear bottom L2.

[0191] Moreover, since the film thickness of the Au film included in the second P-side electrode 72 is 300 nm or less, it is possible to suppress a decrease in cleavage property in the cleavage process of the method for manufacturing the semiconductor light-emitting element 1 described later.

[0192] [1-4. Method for manufacturing semiconductor light-emitting element]

[0193] Using Figures 12 to 35 The method for manufacturing the semiconductor light-emitting element 1 according to the present embodiment will be described. Figures 12 to 31 is a cross-sectional view schematically showing each process of the method for manufacturing the semiconductor light-emitting element 1 according to the present embodiment. In Fig.12 , Fig.13 , Fig.15 , Fig.17 , Fig.19 , Fig.21 , Fig.23 , Fig.24 , Fig.26 , Fig.29 and, Fig.23 shows a cross-section corresponding to the II-II line of the semiconductor light-emitting element 1 shown in Figure 1 . In Fig.14 , Fig.16 , Fig.18 , Fig. 20 , Fig. 22 , Fig.25 , Fig. 27 , Fig.30 and, Fig.24 shows a cross-section corresponding to the III-III line of the semiconductor light-emitting element 1 shown in Figure 1 . In Fig.28 , Fig.31 shows a cross-section parallel to the ZX plane passing through the front protrusion H1 of the semiconductor light-emitting element 1. Fig.32 is a perspective view schematically showing the configuration of the substrate material 10M according to the present embodiment. Fig.33 is a perspective view schematically showing the cleavage process of the method for manufacturing the semiconductor light-emitting element 1 according to the present embodiment. Fig.34 and Fig.35 are a perspective view and a cross-sectional view schematically showing the formation processes of the cover films 2F and 2R of the method for manufacturing the semiconductor light-emitting element 1 according to the present embodiment, respectively.

[0194] First, a semiconductor laminate 1S having a waveguide is formed on a substrate 10. Specifically, as Fig.12 shown, a wafer including the substrate 10, i.e., a substrate material, is prepared, and the semiconductor laminate 1S is formed above the substrate material. The process of forming each semiconductor layer includes: a process of forming an N-type semiconductor layer 20 above the substrate 10, a process of forming an active layer 30 above the N-type semiconductor layer 20, a process of forming a P-type cladding layer 40 above the active layer 30, and a process of forming a contact layer 50 above the P-type cladding layer 40.

[0195] In the present embodiment, the process of forming each semiconductor layer further includes a process of forming a cover layer 55 on the contact layer 50. The cover layer 55 is a layer that functions as a mask for forming a window region 30w in the active layer 30. The cover layer 55 has, for example, a GaInP layer on the contact layer 50 and an AlGaAs layer on the GaInP layer.

[0196] Each semiconductor layer is, for example, crystallographically grown by MOCVD (Metalorganic Chemical Vapor Deposition).

[0197] Next, a window region 30w is formed in a region corresponding to the vicinity of the front end face 1F in the active layer 30. Specifically, for example, by annealing the semiconductor laminate 1S, the window region 30w can be formed in the vicinity of the front end face 1F of the active layer 30 that is not covered by the cover layer 55. In the present embodiment, the window region 30w is also formed in a region corresponding to the vicinity of the rear end face 1R.

[0198] Next, as Fig.13 and Fig.14 shown, the cover layer 55 is removed. Accordingly, as Fig.14 shown, the active layer 30 having the window region 30w in the region near the front end face 1F is formed.

[0199] Next, a ridge R is formed in a region including the P-type cladding layer 40 and the contact layer 50. The process of forming the ridge R includes a process of forming an upper ridge Ru and a process of forming a lower ridge Rd (refer to Fig.17 ) after the process of forming the upper ridge Ru. First, as Fig.15 and Fig.16 shown, the upper ridge Ru is formed. In the present embodiment, the upper wing Gu is also formed simultaneously. And, in the present embodiment, wet etching is used in the process of forming the upper ridge Ru. Accordingly, the side surface of the upper ridge Ru can be inclined so that the upper ridge Ru becomes a regular trapezoid. Therefore, the tightness between the side surface of the upper ridge Ru and the insulating film 60 can be improved.

[0200] At the same time, a groove portion Te is also formed herein. Since the extending direction of the groove portion Te is different from the extending direction of the side surface of the upper ridge portion Ru by 90 degrees, the side surface of the groove portion Te inclines from the upper surface of the semiconductor light-emitting element 1 toward the groove portion, so that the width of the lower end of the groove portion Te can be larger than the width of the upper end of the groove portion Te.

[0201] In this process, specifically, on the contact layer 50, a mask made of SiO 2 or the like is formed in a prescribed pattern by photolithography. After that, by wet etching technology, the portion of the contact layer 50 not covered by the mask is removed. When performing wet etching, the etching solution used in the etching and the composition of each semiconductor layer are determined such that the etching rate of the second etching stop layer 45 is slower than that of the contact layer 50. Accordingly, it is easy to stop the etching at the second etching stop layer 45. That is, the controllability of the heights of the upper ridge portion Ru and the upper wing portion Gu can be improved. In the present embodiment, a part of the contact layer 50 and the second etching stop layer 45 is removed by wet etching.

[0202] As the prescribed pattern, similar to the pattern shown by the Figure 1 dotted line, a pattern in which the portion that becomes the outer periphery in the plan view of the upper ridge portion Ru and the portion where the upper ridge portion Ru extends in the front-back direction in the side direction with respect to the optical axis can be removed can be adopted.

[0203] And in the present embodiment, since the second etching stop layer 45 has constant regions 45a and 45c (refer to Figure 8 ) where the Al component ratio is constant with respect to the position in the stacking direction, compared with the case where the entire second etching stop layer 45 is composed of inclined regions, the etching can be more surely stopped at the second etching stop layer 45.

[0204] As the etching solution used in the etching, for example, a solution including tartaric acid and hydrogen peroxide can be used. The mixing ratio of tartaric acid and hydrogen peroxide is, for example, 2:1.

[0205] By the above method, as Fig.15 and Fig.16 show, the upper ridge portion Ru and the upper wing portion Gu having a positive trapezoid in the cross section perpendicular to the light propagation direction can be formed. In addition, as Fig.16 shows, the upper ridge portion Ru is not formed in the region corresponding to the groove portion Te. As Figure 5 shows, in the cross section of the upper ridge portion Ru in the direction parallel to the light propagation direction (and the stacking direction), the side surface of the groove portion Te inclines from the upper surface of the semiconductor light-emitting element 1 toward the groove portion, and has a shape in which the width of the lower end of the groove portion Te is larger than the width of the upper end of the groove portion Te.

[0206] Next, as described above, after forming the upper ridge portion Ru and the upper wing portion Gu, as Fig.17 and Fig.18 shown, the lower ridge portion Rd and the lower wing portion Gd are formed. In the present embodiment, wet etching is employed in the process of forming the lower ridge portion Rd. Specifically, through photolithography technology, a mask is formed in such a manner that the upper ridge portion Ru and the upper wing portion Gu are covered with a mask composed of SiO 2 or the like. As the mask pattern, it can be the same as the pattern shown by the dotted line in Figure 1 , and a pattern in which only the region parallel to the upper ridge portion Ru becomes an opening within the region where the second etching stop layer 45 is exposed can be adopted. After that, by using wet etching technology, the groove portion T is formed by etching the region of the P-type cladding layer 40 that is not covered by the mask until the first etching stop layer 43. Accordingly, the lower ridge portion Rd and the lower wing portion Gd can be formed. When performing wet etching, the etching solution used in the etching and the composition of each semiconductor layer are determined in such a manner that the etching rate of the first etching stop layer 43 is slower than that of the second cladding layer 44. Accordingly, the etching easily stops at the first etching stop layer 43. That is, the controllability of the heights of the lower ridge portion Rd and the lower wing portion Gd can be improved. In the present embodiment, the second etching stop layer 45, the second cladding layer 44, and a part of the first etching stop layer 43 are removed by wet etching.

[0207] As the etching solution used in the etching, for example, a solution including sulfuric acid, hydrogen peroxide, and water can be used. The mixing ratio of sulfuric acid, hydrogen peroxide, and water is, for example, 1:1:6.

[0208] Through the above method, the lower ridge portion Rd and the lower wing portion Gd shown in Fig.17 and Fig.18 can be formed. In the present embodiment, as shown in Figure 1 , the lower ridge portion Rd and the lower wing portion Gd are continuously formed from the vicinity of the end portion on the front end face 1F side of the P-type cladding layer 40 to the vicinity of the end portion on the rear end face 1R side.

[0209] In addition, dry etching can be used in the process of forming the lower ridge portion Rd. By using dry etching, the controllability of removing the film thickness by etching can be improved. Therefore, the individual differences in the effective refractive index difference ΔN between the inside and outside of the ridge portion R of the semiconductor light-emitting element 1 and the divergence angle of the emitted light can be reduced. Here, the effective refractive index difference refers to the difference between the effective refractive index n0 of the light with respect to the ridge portion R and the lower part of the ridge portion R and the effective refractive index n1 on the outside in the width direction of the ridge portion R. The outside in the width direction of the ridge portion R means the outside beyond the position of the maximum width of the ridge portion R (in the X-axis direction). The effective refractive index refers to the value obtained by multiplying the light distribution guided in the semiconductor light-emitting element 1 (the light distribution generated during laser oscillation in the present embodiment) by the refractive index distribution of the semiconductor light-emitting element 1. Dry etching can form the lower ridge portion Rd and the lower wing portion Gd having the above-described shape, for example, by using (chemically) reactive etching. As the gas for dry etching, SiCl 4 .

[0210] As described above, the semiconductor laminate 1S having a waveguide can be formed.

[0211] Next, as shown in Fig.19 and Fig. 20 , a recess 3 that is recessed in the width direction of the semiconductor light-emitting element 1 is formed at the end in the width direction of the semiconductor light-emitting element 1. The recess 3 is a part of the separation groove used in the singulation of the semiconductor light-emitting element 1. That is, in the state where a plurality of semiconductor laminates in the state shown in Fig.17 and Fig.18 are connected in the X-axis direction, a separation groove is formed between adjacent semiconductor laminates, and the semiconductor laminates are separated along the separation groove. Accordingly, the recess 3 shown in Fig.19 and Fig. 20 is formed.

[0212] Next, as shown in Fig.21 , an insulating film 60 is formed on the ridge portion R. The insulating film 60 continuously covers from the side surface Rds of the lower ridge portion Rd to a part of the upper surface of the upper ridge portion Ru. In the present embodiment, the insulating film 60 is formed on the entire upper surface of the semiconductor laminate 1S shown in Fig.21 and Fig. 22 . In the present embodiment, a silicon nitride film is formed as the insulating film 60 by using a CVD method or the like.

[0213] Next, as shown in Fig.23As shown, an opening 60a is formed in a region of the insulating film 60 corresponding to the upper surface of the upper ridge Ru. Specifically, a mask is formed in a region other than the region corresponding to the opening 60a of the insulating film 60. For example, the opening 60a is formed by etching the region corresponding to the opening 60a in the insulating film 60.

[0214] Next, as Fig.24 and Fig.25 shown, a first P-side electrode 71 is formed above the semiconductor stack 1S. The first P-side electrode 71 is formed at least in the opening 60a of the insulating film 60. In the present embodiment, the first P-side electrode 71 continuously covers from the upper surface of one upper wing portion Gu to the upper surface of the other upper wing portion Gu. The first P-side electrode 71 is formed, for example, by photolithography and evaporation.

[0215] Next, as Figure 26 to Figure 28 shown, a pad electrode 73 is formed above the first P-side electrode 71. The pad electrode 73 is formed at least above the opening 60a of the insulating film 60. In the present embodiment, the pad electrode 73 continuously covers from the upper surface of one upper wing portion Gu to the upper surface of the other upper wing portion Gu in the region on the first P-side electrode 71. And as Fig.28 shown, the pad electrode 73 is also formed above the region of the first P-side electrode 71 corresponding to the front protruding portion H1. Thus, in the process of forming the pad electrode 73, at least a part of the front protruding portion H1 and the rear protruding portion H2 are formed. Accordingly, the process of forming the front protruding portion H1 can be simplified. The pad electrode 73 is formed, for example, by a plating method using a mask. The pad electrode 73, as Figure 26 to Figure 28 (and Figure 5 ) shown, may have eaves portions 73a at the X-axis end and the Y-axis end. For example, after forming a coating film thicker than the mask, the eaves portions can be formed by removing the mask or the like.

[0216] Next, as Figure 29 to Figure 31 shown, a second P-side electrode 72 is formed. The second P-side electrode 72 is formed at least above the opening 60a of the insulating film 60 in the region on the pad electrode 73. In the present embodiment, the second P-side electrode 72 covers the entire upper surface of the pad electrode 73. And the second P-side electrode 72 covers at least a part of the upper surface of the first P-side electrode 71 disposed at the edge of the pad electrode 73. The second P-side electrode 72 may not cover the region below the eaves portion 73a among the side surfaces of the pad electrode 73. The second P-side electrode 72 is formed, for example, by photolithography and evaporation.

[0217] Next, as Figure 2 , Figure 3 , and Figure 5 As shown, an N-side electrode 80 is formed on the lower surface of the substrate 10 (the main surface on the back side of the main surface of the substrate 10 where each semiconductor layer is stacked). Additionally, before forming the N-side electrode 80, the lower surface of the substrate 10 may be polished. The N-side electrode 80 is formed at least at a position facing the opening 60a of the insulating film 60. The N-side electrode 80 is formed, for example, using photolithography technology and an evaporation method.

[0218] Next, a substrate material including the substrate 10 on which the semiconductor stack 1S etc. are stacked by cleavage is used to form a cleavage end face 10C. In this process, as Fig.32 shown, a substrate material 10M on which a plurality of semiconductor stacks 1S etc. corresponding to a plurality of semiconductor light-emitting elements 1 are stacked is cleaved at positions corresponding to the front end face and the rear end face of the semiconductor light-emitting element 1. Accordingly, Fig.33 a rod-shaped substrate 10B as shown is formed. The rod-shaped substrate 10B is a member in which substrates 10 corresponding to a plurality of semiconductor light-emitting elements 1 are connected in the lateral direction, and a plurality of semiconductor stacks 1S etc. corresponding to a plurality of semiconductor light-emitting elements 1 are stacked. Accordingly, a cleavage end face 10C serving as an end face of the substrate 10 and the semiconductor stack 1S is formed.

[0219] Next, a front end face 1F and a rear end face 1R are formed by forming covering films 2F and 2R on a pair of cleavage end faces 10C respectively. In the present embodiment, as Fig.34 and Fig.35 shown, the rod-shaped substrate 10B is sandwiched by the spacer 10S such that the cleavage end face 10C is almost in the same plane as the side face of the spacer 10S. In this state, a covering film 2F is formed on the cleavage end face 10C by sputtering, for example. As sputtering, ECR (Electron Cyclotron Resonance) sputtering can be used, for example. Accordingly, as Fig.35The front end face 1F is formed as shown. Also, in the present embodiment, since the rod-shaped substrate 10B has a front bottom L1 and a front protruding portion H1 that protrudes upward with respect to the front bottom L1, a gap is formed between the front bottom L1 and the spacer. For this reason, the sputtering material (e.g., dielectric) is laminated not only on the split end face 10C, but also on the front bottom L1 and the front surface layer of the front protruding portion H1 from this gap. Moreover, in the rod-shaped substrate 10B, since an N-side electrode is formed at a position on the back surface of the substrate (the surface on the back side of the main surface of the substrate 10 where the semiconductor laminate 1S is formed) that is separated from the front end face, a narrow gap is also formed between the back surface of the substrate and the spacer. For this reason, the sputtering material that enters from this gap is also slightly laminated near the front end face of the back surface of the substrate. For this reason, in the present embodiment, the covering film 2F is continuous from the back surface of the substrate via the split end face 10C to the front bottom L1. Additionally, in Fig.35 Although the covering film 2F is shown, the covering film 2R is also formed in the same manner on the other split end face 10C to form the rear end face 1R.

[0220] Next, the plurality of semiconductor light-emitting elements 1 in the rod-shaped substrate 10B are singulated. Specifically, the rod-shaped substrate 10B is divided along the recess 3 that functions as an element separation groove. Thereby, the semiconductor light-emitting element 1 according to the present embodiment can be manufactured. By the manufacturing method of the semiconductor light-emitting element 1 according to the present embodiment, the same effects as the above-described various effects for the semiconductor light-emitting element 1 are achieved.

[0221] [1-5. Manufacturing Method of Semiconductor Light-Emitting Device]

[0222] Using Fig.36 the manufacturing method of the semiconductor light-emitting device 5 will be described. Fig.36 is a flowchart showing the manufacturing method of the semiconductor light-emitting device 5 according to the present embodiment.

[0223] As Fig.36 shown, first, the semiconductor light-emitting element 1 is manufactured as described above (S10).

[0224] Next, the upper surface of the semiconductor light-emitting element 1 and the heat sink 7 are joined using the joining member 9 (S20). In the present embodiment, as Fig. 9 and Fig.10 shown, the upper surface of the semiconductor light-emitting element 1 is joined to the heat sink 7 via the conductive layer 8 using the joining member 9.

[0225] Accordingly, the semiconductor light-emitting device 5 can be manufactured. By the manufacturing method of the semiconductor light-emitting device 5 according to the present embodiment, the same effects as the above-described respective effects for the semiconductor light-emitting element 1 and the semiconductor light-emitting device 5 are achieved.

[0226] [1-6. Other Embodiments]

[0227] Using Figures 37 to 40 Other embodiments of the semiconductor light-emitting element 1 according to the present embodiment will be described. Fig.37 Constitution examples of the contact layer 50, the P-type cladding layer 40, and the active layer 30 of the embodiment are shown. Fig.38 Constitution examples of the N-type semiconductor layer 20 and the substrate 10 of the embodiment are shown. Fig.39 Constitution examples of the contact layer 50, the P-type cladding layer 40, and the active layer 30 of Embodiment 2 are shown. Fig.40 Constitution examples of the N-type semiconductor layer 20 and the substrate 10 of Embodiment 2 are shown.

[0228] [1-6-1. Embodiment 1]

[0229] As Fig.37 and Fig.38 shown, in Embodiment 1, the constitutions of the N-type cladding layer 23, the N-side guiding layer 32, and the P-side guiding layer 36 are mainly different from the above constitutions. In the present embodiment, the N-type cladding layer 23 has a first N-type cladding layer 23a, a 2DEG layer 23b, and a second N-type cladding layer 23c, the N-side guiding layer 32 has a first N-side guiding layer 32a and an N-side carrier blocking layer 32b, and the P-side guiding layer 36 has a P-side carrier blocking layer 36a and a first P-side guiding layer 36b. Here, the 2DEG layer 23b is a layer in which two-dimensional electron gas occurs.

[0230] In Embodiment 1, the 2DEG layer 23b is a laminated structure, which is composed of 60 pairs of alternately laminated undoped Al 0.24 Ga 0.76 As layers with a film thickness of 0.005 μm and N-type Al 18 cm -3 doped with Si at a concentration of 2.0×10 0.28 Ga 0.72 As layers with a film thickness of 0.005 μm. And, the N-side carrier blocking layer 32b includes a layer having an energy level of the valence band lower than that of the first N-side guiding layer 32a, and is a thin layer that is doped with Si but has a film thickness that does not affect light guiding. The P-side carrier blocking layer 36a includes a layer having an energy level of the conduction band higher than that of the first P-side guiding layer 36b, and is a thin layer that is doped with C but has a film thickness that does not affect light guiding.

[0231] By using such an N-type clad layer 23, it becomes possible to reduce the resistance of the N-type clad layer 23. In addition, by using such an N-side guiding layer 32 and a P-side guiding layer 36, the N-side carrier blocking layer 32b suppresses the leakage of holes from the well layer 34, and the P-side carrier blocking layer 36a suppresses the leakage of electrons from the well layer 34. By effectively confining holes and electrons within the well layer 34, it is possible to reduce the oscillation threshold current and improve the luminous efficiency, thereby reducing the operating current value. Accordingly, since heat generation in the semiconductor light-emitting element 1 can be reduced, the reliability of the semiconductor light-emitting element 1 can be improved. In addition, although the film thicknesses of the N-side barrier layer 33 and the P-side barrier layer 35 are different, it hardly affects heat generation.

[0232] [1-6-2. Example 2]

[0233] As Fig.39 and Fig.40 shown, in Example 2, the main differences in the configurations of the N-type clad layer 23, the N-side guiding layer 32, and the P-side guiding layer 36 are different from those in the above respective configurations. In the present embodiment, AlGaAsP having an almost the same band gap as that of AlGaAs but a different lattice constant is used for these layers. Since there is a positive correlation between the band gap and the refractive index, by adjusting the composition ratios of the constituent elements of these layers, it is possible to reduce the strain amount in the stacking direction without affecting the light confinement. Accordingly, the warpage amount of the semiconductor light-emitting element 1 can be reduced. In this way, by reducing the warpage amount of the semiconductor light-emitting element 1, when connecting the semiconductor light-emitting element 1 to a heat sink 7 or the like, the wettability with respect to the bonding member 9 near the front end face 1F can be improved.

[0234] (Embodiment 2)

[0235] The semiconductor light-emitting element and the semiconductor light-emitting device according to Embodiment 2 will be described. The semiconductor light-emitting element according to the present embodiment is different from the semiconductor light-emitting element 1 according to Embodiment 1 in the configuration of the front protruding portion H1. Hereinafter, for the semiconductor light-emitting element and the semiconductor light-emitting device according to the present embodiment, the differences from the semiconductor light-emitting element 1 and the semiconductor light-emitting device 5 according to Embodiment 1 will be mainly used Fig.41 for the description.

[0236] Fig.41 is a plan view schematically showing the configuration of the front protruding portion H1 of the semiconductor light-emitting element 101 according to the present embodiment. As Fig.41As shown, the front protruding portions H1 of the semiconductor light-emitting element 101 according to this embodiment are intermittently arranged in the direction along the front end face 1F. In other words, the front protruding portions H1 are intermittently formed in the lateral direction (i.e., the X-axis direction) perpendicular to the stacking direction and the optical axis direction (i.e., the Y-axis direction). In Fig.41 the example shown, the front protruding portions H1 have a plurality of continuous regions H1C and one or more void regions H1G.

[0237] The plurality of continuous regions H1C are regions each of which protrudes upward with respect to the front bottom L1 and the rear bottom L2. The one or more void regions H1G are regions each of which is located between two adjacent continuous regions H1C among the plurality of continuous regions H1C and does not protrude upward with respect to the front bottom L1 and the rear bottom L2. In this embodiment, the plurality of continuous regions H1C include a part of the pad electrode 73, and the pad electrode 73 is not disposed in each of the one or more void regions H1G. Therefore, the positions of the upper surfaces of the one or more void regions H1G in the stacking direction are equal to the positions of the upper surfaces of the front bottom L1 and the rear bottom L2 in the stacking direction.

[0238] Use Fig.42 and Fig.43 to explain the effects of such a semiconductor light-emitting element 101. Fig.42 and Fig.43 is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device 105 according to this embodiment. Fig.42 shows a cross-section parallel to the YZ plane passing through the void region H1G of the front protruding portion H1 of the semiconductor light-emitting element 101. Fig.43 shows a cross-section parallel to the YZ plane passing through the continuous region H1C of the front protruding portion H1 of the semiconductor light-emitting element 101. In Fig.42 in order to clarify the positional relationship between the front protruding portion H1 (continuous region H1C) and the rear bottom L2, etc., the position of the front protruding portion H1 is shown by a dotted line.

[0239] As Fig.42 shown, the void region H1G does not protrude upward with respect to the front bottom L1 and the rear bottom L2. Therefore, starting from the region with high wettability of the rear bottom L2 located behind the front protruding portion H1, the melted bonding member 9 spreads in the void region H1G. Then, since there is no region where the void region H1G protrudes upward, the bonding member 9 easily reaches near the front end face 1F through the void region H1G (refer to Fig.41(in the flow direction of the joining member 9 indicated by the dashed arrow). That is, the joining member 9 extends from the gap region H1G all the way to the position in front of the front protrusion H1. In the present embodiment, the joining member 9 extends from the rear bottom L2 all the way to the position in front of the gap region H1G and the front protrusion H1. Also, as Fig.43 shown, the continuous region H1C protrudes upward with respect to the rear bottom L2. Therefore, the melted joining member 9 does not cross over the front protrusion H1 and come into contact with the front bottom L1, and the joining member that spreads through the gap region H1G toward the front bottom L1 spreads out in the lateral direction and exists on the front bottom even in a cross-section parallel to the YZ plane passing through the continuous region H1C.

[0240] Therefore, especially in the cross-sectional view of the gap region H1G, it is easy for the joining member 9 that crosses from the front protrusion H1 to the front bottom L1 to form a rounded portion. Even in the joining member 9 according to the present embodiment, the height of the rounded portion gradually decreases from the upper surface of the front protrusion H1 as it enters the front end face 1F side. Hereinafter, Fig.43 is used to describe the rounded portion of the joining member 9 according to the present embodiment. As Fig.43 shown, the surface 9FG of the rounded portion in front of the gap region H1G of the front protrusion H1 has a concave shape in a cross-section near the center of the gap region. Through such a rounded portion, the heat generated near the front end face 1F can be dissipated to the heat sink 7, thereby suppressing a decrease in the heat dissipation characteristics of the semiconductor light-emitting element 101 and the semiconductor light-emitting device 105 including the semiconductor light-emitting element 101.

[0241] In addition, when forming the covering film 2F, although the material of the covering film 2F easily passes through the gap region H1G, due to the presence of the continuous region H1C, at least a part of the material of the covering film 2F can be blocked. Therefore, compared with the case where there is no front protrusion H1, it is possible to suppress the formation of the covering film 2F on the rear bottom L2 and the rear protrusion H2.

[0242] And in Fig.41 , the width of the gap region H1G in the lateral direction can be larger than the width of the continuous region H1C in the lateral direction. Accordingly, the flow of the joining member 9 from the rear bottom L2 to the front bottom L1 is not hindered, and the material of the covering film 2F can be suppressed from entering the rear from the gap region H1G. Specifically, for example, in the present embodiment, the width of the continuous region H1C in the lateral direction is 8 μm, and the width of the gap region H1G in the lateral direction is 12 μm.

[0243] In addition, the configuration of the front protrusion H1 according to the present embodiment is not limited to the Fig.41 example shown. Hereinafter, Figures 44 to 47The configuration example of the front protrusion H1 will be described. Figures 44 to 47 It is a top view schematically showing the configuration example of the front protrusion H1 according to the present embodiment.

[0244] As Fig.44 shown, the continuous regions H1C are arranged in two columns, and one column of continuous regions H1C can be arranged behind the gap region H1G of the other column. In other words, the continuous regions H1C can be arranged in a checkered pattern without gaps when viewed from the front end face 1F side. With respect to the linear flow of the raw material by sputtering or the like, since the flow of the solder may change direction in the middle, with this configuration, the flow of the joining member 9 from the rear bottom L2 to the front bottom L1 is not hindered, and the formation of the cover film 2F behind the front protrusion H1 can be almost completely suppressed.

[0245] And in Fig.41 and Fig.44 the example shown, although the shape of the continuous region H1C in the top view is rectangular, the shape of the continuous region H1C in the top view may not be rectangular. For example Fig.45 shown, the shape of the continuous region H1C in the top view can be a rhombus. The vertices of the rhombus-shaped continuous region H1C in the top view are arranged at positions facing the vertices of the other adjacent continuous regions H1C, and the gap region H1G is between the two facing vertices of the two adjacent continuous regions H1C. Accordingly, since the end face of the continuous region H1C can be inclined with respect to the flow direction of the joining member 9 from the rear bottom L2 to the front end face 1F (that is, the negative direction in the Y-axis direction), compared with the case where the end face is perpendicular to the flow direction of the joining member 9, the flow of the joining member 9 to the front end face 1F is not hindered (refer to the dotted arrow in Fig.45 ). And, since the end face on the front end face 1F side of the continuous region H1C is inclined with respect to the flow direction of the joining member 9, the width of the gap region H1G gradually expands as it approaches the front end face 1F. Therefore, the joining member 9 passing through the gap can be easily expanded, and since the area of the front protrusion H1 can be ensured to a certain extent, the heat dissipation via the pad electrode can be almost maintained.

[0246] And as Fig.46 shown, the shape of the continuous region H1C in the top view can be a hexagon. In Fig.46 the example shown, two adjacent hexagonal continuous regions H1C are arranged such that a part of one side of each faces each other. Accordingly, the same effect as that of the rhombus-shaped continuous region H1C shown in Fig.45 is achieved. Further, in Fig.46In the example shown, the width of the gap region H1G in the horizontal direction can vary smoothly in the Y-axis direction position. Therefore, the flow of the bonding member 9 can be further promoted.

[0247] And as Fig.47 shown, the shape of the continuous region H1C in the top view can be trapezoidal. In Fig.47 the example shown, the continuous region H1C is configured such that its width in the horizontal direction gradually increases as it approaches the front end face 1F. In other words, the gap region H1G is configured such that its width in the horizontal direction gradually decreases as it approaches the front end face 1F. Even such a front protruding portion H1 does not Fig.45 hinder the flow of the bonding member 9 as in the case of the diamond-shaped continuous region H1C shown.

[0248] (Embodiment 3)

[0249] The semiconductor light-emitting element and the semiconductor light-emitting device according to Embodiment 3 will be described. The semiconductor light-emitting element according to this embodiment differs from the semiconductor light-emitting element 1 according to Embodiment 1 in the configuration of the second P-side electrode 72. Hereinafter, the semiconductor light-emitting element and the semiconductor light-emitting device according to this embodiment will be mainly described with reference to Figures 48 to 51 the differences from the semiconductor light-emitting element 1 and the semiconductor light-emitting device 5 according to Embodiment 1.

[0250] Fig.48 FIG. is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element 201 according to this embodiment. Fig.48 FIG. shows a cross-section parallel to the YZ plane passing through the optical axis Ax of the semiconductor light-emitting element 201.

[0251] As Fig.48 shown, the first P-side electrode 71 is exposed at least in part on the front bottom L1 and the rear bottom L2 of the semiconductor light-emitting element 201 according to this embodiment. In other words, the second P-side electrode 72 is not formed on at least part of the front bottom L1 and the rear bottom L2 of the semiconductor light-emitting element 201. Specifically, the second P-side electrode 72 is not formed in a large area on the side closer to the front end face 1F among the rear bottom L2. In addition, the second P-side electrode 72 is not formed on the front protruding portion H1 either.

[0252] The effects of the semiconductor light-emitting element 201 and the semiconductor light-emitting device 205 including the semiconductor light-emitting element 201 according to this embodiment will be described with reference to Fig.49 FIG. Fig.49 FIG. is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device 205 according to this embodiment. Fig.49Only the portion including the front end face 1F among the cross sections passing through the optical axis Ax and parallel to the YZ plane of the semiconductor light-emitting device 205 is shown.

[0253] In the method of manufacturing the semiconductor light-emitting device 205, in the process of bonding the upper surface of the semiconductor light-emitting element 201 to the heat sink 7 or the like by the bonding member 9, the bonding member 9 made of AuSn solder melts and deforms and expands forward from the rear protruding portion H2. At this time, it passes over the end portion on the front end face 1F side of the second P-side electrode 72 on the rear bottom L2 and contacts the first P-side electrode 71. Therefore, even if the pad electrode 73 of the front protruding portion H1 has an eaves-like structure, since there are the lower end portion of the pad electrode 73 and the portion in contact with the first P-side electrode 71 in a wide range of the side closer to the front end face 1F in the rear bottom L2, the bonding member 9 can easily reach the pad electrode 73 of the front protruding portion H1 along the first P-side electrode 71 without interruption. In addition, in the present embodiment, the bonding member 9 is as Fig.49 shown, and contacts the pad electrode 73 in the front protruding portion H1.

[0254] After the bonding member 9 reaches the pad electrode 73, the bonding member 9 passes over the front protruding portion H1 and reaches the front bottom L1. At this time, a rounded corner portion of the bonding member 9 is formed by crossing from the front protruding portion H1 to the front bottom L1. Since heat generated near the front end face 1F can be dissipated to the heat sink 7 via this rounded corner portion, the heat dissipation characteristics of the semiconductor light-emitting element 201 and the semiconductor light-emitting device 205 including the semiconductor light-emitting element 201 can be improved.

[0255] In addition, in Fig.48 the example shown, although the second P-side electrode 72 is formed in a part of the rear bottom L2, the second P-side electrode 72 may not be formed in the rear bottom L2. An example of this method will be described using Fig.50 to illustrate. Fig.50 is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element 201a according to a modification of the present embodiment. Fig.50 Shows a cross section parallel to the YZ plane passing through the optical axis Ax of the semiconductor light-emitting element 201a.

[0256] As Fig.50 shown, in all regions of the front bottom L1 and the rear bottom L2 of the semiconductor light-emitting element 201a according to this modification, the first P-side electrode 71 is exposed from the second P-side electrode 72. In other words, the second P-side electrode 72 is not formed in the front bottom L1 and the rear bottom L2 of the semiconductor light-emitting element 201a. And as Fig.50 shown, the second P-side electrode 72 may not be disposed on the upper surface of the front side end portion of the rear protruding portion H2.

[0257] The effects of the semiconductor light-emitting element 201a and the semiconductor light-emitting device 205a including the semiconductor light-emitting element 201a according to this modification will be described using Fig.51 . Fig.51 FIG. is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device 205a according to this modification. In Fig.51 , only the portion including the front end face 1F in the cross-section of the semiconductor light-emitting device 205a passing through the optical axis Ax and parallel to the YZ plane is shown.

[0258] In the manufacturing method of the semiconductor light-emitting device 205a, in the process of bonding the upper surface of the semiconductor light-emitting element 201a to the heat sink 7 or the like by the bonding member 9, the bonding member 9 made of AuSn solder melts and deforms, and expands forward from the rear protruding portion H2. At this time, from the upper surface of the pad electrode 73 at the front end of the rear protruding portion H2, it reaches the upper surface of the first P-side electrode 71 on the rear bottom L2 via the front end face of the rear protruding portion H2. Even in this modification, since there is a portion where the lower end of the pad electrode 73 on the front protruding portion H1 contacts the first P-side electrode 71, the bonding member 9 easily reaches the pad electrode 73 of the front protruding portion H1 without interruption along the first P-side electrode 71. In addition, in this modification, the bonding member 9 is as Fig.51 shown, and contacts the pad electrode 73 on the front protruding portion H1 and the pad electrode 73 on the rear protruding portion H2.

[0259] Regarding the state of the bonding member 9 after the bonding member 9 reaches the pad electrode 73, it is the same as the state example shown in Fig.49 . Thus, even in the semiconductor light-emitting element 201a and the semiconductor light-emitting device 205a according to this modification, the same effects as those of the semiconductor light-emitting element 201 and the semiconductor light-emitting device 205 according to this embodiment are achieved.

[0260] (Embodiment 4)

[0261] The semiconductor light-emitting element and the semiconductor light-emitting device according to Embodiment 4 will be described. The semiconductor light-emitting element according to this embodiment is mainly different from the semiconductor light-emitting element 1 according to Embodiment 1 in the configuration of the rear protruding portion H2. Hereinafter, regarding the semiconductor light-emitting element and the semiconductor light-emitting device according to this embodiment, centering on the differences from the semiconductor light-emitting element 1 and the semiconductor light-emitting device 5 according to Embodiment 1, using Fig.52 and Fig.53 will be described.

[0262] Fig.52It is a plan view schematically showing the overall configuration of the semiconductor light-emitting element 301 according to the present embodiment. Fig.53 It is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device 305 according to the present embodiment. Fig.53 It shows a cross-section parallel to the YZ plane of the second region H22 of the rear protruding portion H2.

[0263] In the semiconductor light-emitting element 301 according to the present embodiment, on the upper surface of the semiconductor light-emitting element 301 and above the optical axis Ax from which the semiconductor light-emitting element 301 emits light, a front bottom L1 extending rearward from the front end face 1F and a rear protruding portion H2 disposed behind the front bottom L1 and protruding upward with respect to the front bottom L1 are formed.

[0264] The rear protruding portion H2 of the semiconductor light-emitting element 301 has a first region H21 and a second region H22. The first region H21 is a region located above the optical axis Ax from which the semiconductor light-emitting element 301 emits light among the rear protruding portion H2. The second region H22 is a region adjacent to the first region H21 in the lateral direction (i.e., the X-axis direction) perpendicular to the light propagation direction and the stacking direction of the semiconductor laminate 1S. As Fig.52 shown, the distance D1 from the front end face 1F to the front end of the first region H21 is larger than the distance D2 from the front end face 1F to the front end of the second region H22.

[0265] In this way, in the present embodiment, the second region H22 of the rear protruding portion H2 extends to the vicinity of the front end face 1F. Accordingly, since the heat generated near the front end face 1F can be dissipated through the second region H22, the heat dissipation characteristics of the semiconductor light-emitting element 301 can be improved.

[0266] Moreover, in the semiconductor light-emitting device 305 in which the semiconductor light-emitting element 301 is joined to a radiator 7 or the like using a joining member 9, as Fig.53 shown, the joining member 9 reaches the front end face 1F via the second region H22. However, since the second region H22 is not located directly above the optical axis Ax, it is possible to suppress the light from being blocked by the joining member 9 reaching the front end face 1F.

[0267] By increasing the distance D1, when the bonding member 9 formed on the rear convex portion H2 melts and spreads forward, it is possible to suppress it from reaching the front end face 1F of the semiconductor light-emitting element 301. However, if the distance D1 is made too large, the area of the rear convex portion H2 made of Au or the like with high thermal conductivity decreases, resulting in a reduction in heat dissipation characteristics. In the present embodiment, by increasing the distance D1, it is possible to suppress the bonding member 9 from reaching the front end face 1F, and by reducing the distance D2, it is possible to improve the heat dissipation characteristics. The distance D1 can be, for example, 15 μm or more and 50 μm or less. In the present embodiment, the distance D1 is 25 μm.

[0268] And as Fig.52 shown, the semiconductor light-emitting element 301 has a ridge portion R and a groove portion T arranged along the ridge portion R, and the second region H22 covers the groove portion T. Since the groove portion T exposes a layer with a high Al composition ratio, by covering the groove portion T with the pad electrode 73 included in the second region H22, the tightness between the insulating film 60 arranged in the groove portion T and the groove portion T can be improved. Specifically, in the case of the present embodiment, the width of the first region H21 is 12 μm narrower than the inner interval of the groove portion T (that is, the width of the upper surface of the ridge portion R located between the two groove portions T). In addition, the configuration of covering the groove portion T is not limited to the configuration of covering the entire groove portion T. For example, the configuration of covering the groove portion T also includes a configuration of covering only a part of the groove portion T.

[0269] And in the present embodiment as well as in the semiconductor light-emitting element 1 according to Embodiment 1, on the upper surface of the semiconductor light-emitting element 301, and above the optical axis Ax, there are formed: a rear bottom portion L2 arranged between the front bottom portion L1 and the rear convex portion H2, and a front convex portion H1 arranged between the front bottom portion L1 and the rear bottom portion L2 and protruding upward with respect to the front bottom portion L1 and the rear bottom portion L2. Accordingly, even in the semiconductor light-emitting element 301 according to the present embodiment, the same effect as that of the semiconductor light-emitting element 1 according to Embodiment 1 is achieved. In addition, the semiconductor light-emitting element 301 according to the present embodiment may not have the front convex portion H1. In this case, the front bottom portion L1 and the rear bottom portion L2 can be integrated. For example, the region combining the front bottom portion L1 and the rear bottom portion L2 can be referred to as the front bottom portion L1.

[0270] And as Fig.52 shown, the distance D3 from the front end face 1F to the front end of the front convex portion H1 is preferably not too small. When the distance D3 is too small, the bonding member 9 will reach the front end face 1F from the front convex portion H1, and thus the light will be blocked by the bonding member 9. And the distance D3 is, for example, 3 μm or more and 7 μm or less. In the present embodiment, the distance D3 is 5 μm.

[0271] Moreover, the distance D3 can be smaller than the distance D2 from the front end face 1F to the front end of the second region. Accordingly, a gap can be provided between the front protruding portion H1 and the second region H22 of the rear protruding portion H2. Accordingly, the bonding member 9 will flow out from the rear bottom L2 through this gap. Therefore, the region for heat dissipation using the bonding member 9 can be enlarged. The distance D2 can be, for example, 5 μm or more and 15 μm or less. In the present embodiment, the distance D2 is 10 μm.

[0272] Even in the semiconductor light-emitting device 305 according to the present embodiment, similar to the semiconductor light-emitting device 5 according to the first embodiment, the bonding member 9 located in front of the first region H21 is not disposed in front of the front end face 1F. Additionally, as Fig.53 shown, in the semiconductor light-emitting device 305 according to the present embodiment, the bonding member 9 located in front of the second region H22 extends from the front bottom L1 to a position in front of the front end face 1F.

[0273] Accordingly, in front of the second region H22, since the bonding member 9 surely covers the front end face 1F, the heat dissipation effect can be maximized in front of the second region H22. And since the second region H22 is not directly above the optical axis Ax, light shielding caused by the bonding member 9 reaching the front end face 1F can be suppressed.

[0274] And in the semiconductor light-emitting element 301 according to the present embodiment, as Fig.52 and Fig.53 shown, the rear bottom L2 and the rear protruding portion H2 each include a part of the second P-side electrode 72, similar to the semiconductor light-emitting element 1 according to the first embodiment. And the rear protruding portion H2 includes a part of the pad electrode 73. As Fig.53 shown, the pad electrode 73 included in the second region H22 is separated from the bonding member 9. Accordingly, diffusion of Sn or the like in the bonding member 9 into the pad electrode 73 and alloying of the pad electrode 73 can be suppressed. Therefore, a decrease in heat dissipation characteristics due to alloying of the pad electrode 73 included in the second region H22 can be suppressed. And similar to the semiconductor light-emitting device 5 according to the first embodiment, the pad electrode 73 included in the first region H21 can be separated from the bonding member 9. Accordingly, the same effect as the configuration in which the second region H22 and the bonding member 9 are separated can be obtained.

[0275] (Embodiment 5)

[0276] A description is given of the semiconductor light-emitting element according to Embodiment 5. The semiconductor light-emitting element according to this embodiment is mainly different from the semiconductor light-emitting element 1 according to Embodiment 1 in the configuration of the front protruding portion H1. Hereinafter, the semiconductor light-emitting element according to this embodiment will be described centering on the differences from the semiconductor light-emitting element 1 according to Embodiment 1 by using Fig.54 as follows.

[0277] Fig.54 FIG. 6 is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element 401 according to this embodiment. Fig.54 It shows a cross-section passing through the optical axis Ax and parallel to the YZ plane.

[0278] As Fig.54 shown, the semiconductor light-emitting element 401 according to this embodiment has a front protruding portion H1. The front protruding portion H1 according to this embodiment includes a part of the semiconductor laminate 401S.

[0279] The semiconductor laminate 401S according to this embodiment has the semiconductor laminate 1S according to Embodiment 1 and a cover layer 55. The cover layer 55 is a semiconductor layer used when forming the window region 30w in the active layer 30 as described above.

[0280] In this embodiment, the used cover layer 55 is patterned into a desired shape by photolithography or the like, and this is used as a part of the front protruding portion H1. Thus, in the method of manufacturing the semiconductor light-emitting element 401 according to this embodiment, at least a part of the front protruding portion H1 is formed in the step of forming the semiconductor laminate 401S. In this embodiment, the front protruding portion H1 also includes a part of each of the first P-side electrode 71 and the second P-side electrode 72. Although the front protruding portion H1 does not include a part of the pad electrode 73, it may include it.

[0281] The front protruding portion H1 as described above may include the cover layer 55. Even in the semiconductor light-emitting element 401 according to this embodiment having such a configuration, the same effect as that of the semiconductor light-emitting element 1 according to Embodiment 1 is achieved.

[0282] In the semiconductor light-emitting element 401 according to the present embodiment, when the height of the front protruding portion H1 (i.e., the position of the upper surface in the Z-axis direction) is higher than the height of the rear protruding portion H2, stress is applied to the front protruding portion H1 during the face-down mounting and the formation of the cover films 2F and 2R, and thus the semiconductor laminate 401S may be damaged. However, when the height of the front protruding portion H1 is lower than the height of the rear protruding portion H2, the material of the cover film 2F reaches the rear bottom L2 and the rear protruding portion H2. Therefore, the height of the front protruding portion H1 may be equal to the height of the rear protruding portion H2.

[0283] (Embodiment 6)

[0284] The semiconductor light-emitting element according to Embodiment 6 will be described. The semiconductor light-emitting element according to the present embodiment mainly differs from the semiconductor light-emitting element 1 according to Embodiment 1 in the configuration of the relative height between the front protruding portion H1 and the rear protruding portion H2. Hereinafter, the semiconductor light-emitting element according to the present embodiment will be described centering on the differences from the semiconductor light-emitting element 1 according to Embodiment 1 Fig.55 for explanation.

[0285] Fig.55 FIG. is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element 501 according to the present embodiment. Fig.55 It shows a cross-section passing through the optical axis Ax and parallel to the YZ plane.

[0286] As Fig.55 shown, the height of the front protruding portion H1 of the semiconductor light-emitting element 501 according to the present embodiment is lower than the height of the rear protruding portion H2.

[0287] With this configuration, in the process of bonding the upper surface of the semiconductor light-emitting element 501 to the radiator 7 or the like using the bonding member 9, when the bonding member 9 made of AuSn solder melts and deforms and spreads from the rear protruding portion H2 to the front, the bonding member 9 easily crosses over the front protruding portion H1. Therefore, a rounded portion of the bonding member 9 is easily formed from the front protruding portion H1 to the front bottom L1.

[0288] In addition, the difference Δh between the height of the front protruding portion H1 and the height of the rear protruding portion H2 is greater than 0 and 1 μm or less. Accordingly, the formation of the cover film 2F behind the front protruding portion H1 can be suppressed.

[0289] (Embodiment 7)

[0290] A semiconductor light-emitting element, a semiconductor light-emitting device, and a method for manufacturing them according to Embodiment 7 will be described. The semiconductor light-emitting element according to this embodiment is different from the semiconductor light-emitting element 1 according to Embodiment 1 in the shape of the pad electrode 73. Hereinafter, the semiconductor light-emitting element and the like according to this embodiment will be described centering on the differences from the semiconductor light-emitting element 1 and the like according to Embodiment 1.

[0291] [7-1. Overall Configuration of Semiconductor Light-Emitting Element and Semiconductor Light-Emitting Device]

[0292] Using Fig.56 And Fig.57 The overall configuration of the semiconductor light-emitting element and the semiconductor light-emitting device according to this embodiment will be described.

[0293] Fig.56 FIG. is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting element 601 according to this embodiment. Fig.56 A cross-section passing through the optical axis Ax and parallel to the YZ plane is shown.

[0294] As Fig.56 shown, in the pad electrode 73 in the front protruding portion H1 and the rear protruding portion H2 according to this embodiment, in a cross-section perpendicular to the front end face 1F and parallel to the stacking direction of the semiconductor stack 1S, it has a shape that becomes a regular trapezoid. That is, the width of the pad electrode 73 in the Y-axis direction becomes smaller as it moves away from the semiconductor stack 1S. In Fig.56 the example shown, the height of the front protruding portion H1 is equal to the height of the rear protruding portion H2, and the pad electrode 73 on the front protruding portion H1 has a flat upper surface 73ft.

[0295] Since the pad electrode 73 has such a shape, the second P-side electrode 72 is continuously arranged between the front bottom L1 and the front protruding portion H1, between the front protruding portion H1 and the rear bottom L2, and between the rear bottom L2 and the rear protruding portion H2.

[0296] Using Fig.57 The effects of the semiconductor light-emitting element 601 and the semiconductor light-emitting device 605 including the semiconductor light-emitting element 601 according to this embodiment will be described. Fig.57 FIG. is a cross-sectional view schematically showing the overall configuration of the semiconductor light-emitting device 605 according to this embodiment. Fig.57 Only a part including the front end face 1F among the cross-sections passing through the optical axis Ax and parallel to the YZ plane of the semiconductor light-emitting device 605 is shown.

[0297] As Fig.57As shown, in the process of bonding the upper surface of the semiconductor light-emitting element 601 to the heat sink 7 or the like using the bonding member 9, the bonding member 9 made of AuSn solder melts and deforms, protruding from the rear protruding portion H2 and spreading forward. Since the pad electrode 73 of the semiconductor light-emitting element 601 according to the present embodiment has a shape that is a right trapezoid, when the bonding member 9 spreads from the rear protruding portion H2 to the rear bottom L2, the front protruding portion H1, and the front bottom L1, the bonding member 9 easily crosses over the front protruding portion H1.

[0298] After the bonding member 9 reaches the pad electrode 73, the bonding member 9 crosses over the front protruding portion H1 and spreads from the front protruding portion H1 to the front bottom L1. At this time, a rounded corner portion of the bonding member 9 is formed from the front protruding portion H1 to the front bottom L1. Heat generated near the front end face 1F can be dissipated to the heat sink 7 via this rounded corner portion, thereby improving the heat dissipation characteristics of the semiconductor light-emitting element 601 and the semiconductor light-emitting device including the semiconductor light-emitting element 601.

[0299] And in the present embodiment, since the second P-side electrode 72 is continuously arranged from the front bottom L1 to the rear protruding portion H2, the pad electrode 73 is covered by the second P-side electrode 72. Accordingly, alloying of the pad electrode 73 can be suppressed. Therefore, a decrease in heat dissipation characteristics due to alloying of the pad electrode 73 can be suppressed.

[0300] The inclination angle θf of the right trapezoid shape of the pad electrode 73 on the front protruding portion H1 (that is, the inclination angles of the front and rear side surfaces of the pad electrode 73 with respect to the XY plane) can be greater than 0 degrees and 40 degrees or less. Accordingly, the bonding member 9 can more easily cross over the front protruding portion H1. And the inclination angle θf can be 20 degrees or more. Accordingly, an excessive dimension of the front protruding portion H1 in the Y-axis direction can be suppressed.

[0301] In addition, the inclination angle θb of the right trapezoid shape of the pad electrode 73 on the rear protruding portion H2 can also be equal to the inclination angle θf.

[0302] [7-2. Manufacturing method of semiconductor light-emitting element]

[0303] Use Figures 58 to 60 The manufacturing method of the semiconductor light-emitting element 601 according to the present embodiment will be described. Figures 58 to 60 Each process in the method of forming the pad electrode 73 of the semiconductor light-emitting element 601 according to the present embodiment is shown respectively.

[0304] As Fig.58As shown, first, similar to the semiconductor light-emitting element 1 according to Embodiment 1, a semiconductor laminate 1S, an insulating film 60, and a first P-side electrode 71 are formed on a substrate 10, and a pad electrode 73 is formed above the first P-side electrode 71. In the present embodiment, the pad electrode 73 is formed on almost the entire surface of the first P-side electrode 71 by a method such as electroplating. After forming the pad electrode 73, heat treatment at about several hundred degrees can be performed on the pad electrode 73. Accordingly, the crystal grain size of Au constituting the pad electrode 73 can be enlarged. Correspondingly, in the etching of the pad electrode 73 described later, the flatness of the surface of the pad electrode 73 to be etched can be improved.

[0305] Next, as Fig.59 shown, a resist film 91 is formed at positions corresponding to the front protruding portion H1 and the rear protruding portion H2 on the pad electrode 73. In addition, an undercut can also be formed near the contact portion of the resist film 91 with the pad electrode 73. Accordingly, the shape of the pad electrode 73 can be made closer to a regular trapezoid.

[0306] Next, as Fig.60 shown, the pad electrode 73 is etched. In the present embodiment, for example, wet etching is used to etch the pad electrode 73. As the etching solution, for example, a mixed solution of iodine and potassium iodide can be used. In addition, an organic solvent such as N-methyl-2-pyrrolidone can be contained in the etching solution. Accordingly, the shape of the pad electrode 73 can be made closer to a regular trapezoid.

[0307] Next, by removing the resist film 91, a pad electrode 73 having a regular trapezoid shape can be formed.

[0308] [7-3. Modification Example]

[0309] A semiconductor light-emitting element according to a modification example of the present embodiment will be described.

[0310] In Fig.56 the example shown, although the height of the front protruding portion H1 is equal to the height of the rear protruding portion H2, the height of the front protruding portion H1 may be lower than the height of the rear protruding portion H2. An example of this state will be described using Fig.61 to illustrate. Fig.61 is a cross-sectional view schematically showing the overall configuration of a semiconductor light-emitting element 601a according to a modification example of the present embodiment. Fig.61 shows a cross-section passing through the optical axis Ax of the semiconductor light-emitting element 601a and parallel to the YZ plane.

[0311] As Fig.61As shown, in the semiconductor light-emitting element 601a according to this modification example, the height of the front protruding portion H1 is lower than the height of the rear protruding portion H2. Also, the pad electrode 73 in the front protruding portion H1 may not have a flat upper surface. Such a pad electrode 73 in the front protruding portion H1 can be formed, for example, by appropriately adjusting the relationship between the width in the Y-axis direction of the front protruding portion H1 and the inclination angle θf. For example, by making the width in the Y-axis direction of the front protruding portion H1 smaller than a specified value, the upper surface of the pad electrode 73 in the front protruding portion H1 can be etched during the etching of the pad electrode 73. Accordingly, the height of the pad electrode 73 in the front protruding portion H1 can be made lower than the height of the pad electrode 73 in the rear protruding portion H2.

[0312] Even in the semiconductor light-emitting element 601a according to this modification example, the same effects as those of the semiconductor light-emitting element 601 are achieved. Also, in the semiconductor light-emitting element 601a according to this modification example, in the process of using the bonding member 9 to bond the upper surface of the semiconductor light-emitting element 601a to the radiator 7 or the like, when the bonding member 9 made of AuSn solder melts and deforms and spreads from the rear protruding portion H2 toward the front, the bonding member 9 is more likely to cross over the front protruding portion H1. Therefore, it is easier to form a rounded portion of the bonding member 9 in the range from the front protruding portion H1 to the front bottom L1.

[0313] In addition, the difference Δh between the height of the front protruding portion H1 and the height of the rear protruding portion H2 may be greater than 0 and 1 μm or less. Accordingly, it is possible to suppress the formation of the covering film 2F behind the front protruding portion H1.

[0314] (Other modification examples, etc.)

[0315] The semiconductor light-emitting element and the like according to the present disclosure have been described above based on the respective embodiments and modification examples, but the present disclosure is not limited to the above-described embodiments and modification examples.

[0316] For example, in the above embodiment, although the semiconductor light-emitting element is exemplified as a semiconductor laser element, the semiconductor light-emitting element is not limited to the semiconductor laser element. For example, the semiconductor light-emitting element may also be a superluminescent light-emitting diode.

[0317] Also, in the above embodiment, although each front bottom and each rear bottom do not include the pad electrode 73, each front bottom and each rear bottom may also include the pad electrode 73. For example, the film thickness of the pad electrode 73 in each front bottom and each rear bottom may be smaller than the film thickness of the pad electrode 73 in each front protruding portion and each rear protruding portion.

[0318] Also, in the above-described embodiment, although the pad electrode 73 has the eaves portion 73a, the pad electrode 73 may not have the eaves portion 73a.

[0319] Also, in the above-described embodiment, although the semiconductor light-emitting element 1 has two wing portions G, the semiconductor light-emitting element 1 may have only one wing portion G.

[0320] Also, in the above-described embodiment, although the active layer 30 of the semiconductor light-emitting element 1 has a single quantum well structure, it may have a multiple quantum well structure.

[0321] Also, in the above-described embodiment, although the active layer 30 of the semiconductor light-emitting element 1 has window regions 30w near the front end face 1F and the rear end face 1R, the semiconductor light-emitting element 1 may not have the window regions 30w.

[0322] Also, in the above-described embodiment, although the inclined regions 45b and 45d of the second etch stop layer 45 are regions where the Al composition ratio decreases as approaching the contact layer 50, they may be regions where the Al composition ratio increases as approaching the contact layer 50.

[0323] Moreover, modes obtained by performing various modifications conceivable by those skilled in the art on the above-described embodiment and modification examples, and modes achieved by arbitrarily combining the constituent elements and functions in the above-described embodiment and modification examples without departing from the gist of the present disclosure are also included in the present disclosure.

[0324] Industrial Applicability

[0325] The semiconductor light-emitting element etc. of the present disclosure can be used as a high-output and high-efficiency light source for a light source for laser processing, for example.

[0326] Description of Reference Numerals

[0327] 1, 101, 201, 201a, 301, 401, 501, 601, 601a Semiconductor light-emitting element

[0328] 1F Front end face

[0329] 1R Rear end face

[0330] 1S, 401S Semiconductor laminate

[0331] 2F, 2R Covering film

[0332] 3 Recess

[0333] 5, 105, 205, 205a, 305, 605 Semiconductor light-emitting device

[0334] 7 Heat sink

[0335] 8 Conductive layer

[0336] 9 Joining component

[0337] 10 Substrate

[0338] 10B Rod-shaped substrate

[0339] 10C Split end face

[0340] 10M Substrate material

[0341] 10S Spacer

[0342] 20 N-type semiconductor layer

[0343] 21 N-type buffer layer

[0344] 22 N-type buffer boundary layer

[0345] 23 N-type cladding layer

[0346] 30 Active layer

[0347] 30w Window region

[0348] 31 N-side cladding boundary layer

[0349] 32 N-side guiding layer

[0350] 32a First N-side guiding layer

[0351] 32b N-side carrier blocking layer

[0352] 33 N-side barrier layer

[0353] 34 Well layer

[0354] 35 P-side barrier layer

[0355] 36 P-side guiding layer

[0356] 36a P-side carrier blocking layer

[0357] 36b First P-side guiding layer

[0358] 37 P-side cladding boundary layer

[0359] 40 P-type cladding layer

[0360] 41 Lower cladding layer

[0361] 42 First cladding layer

[0362] 43 First etch stop layer

[0363] 44 Second cladding layer

[0364] 45 Second etch stop layer

[0365] 45a, 45c Constant regions

[0366] 45b, 45d Inclined regions

[0367] 50 Contact layer

[0368] 55 Overlayer

[0369] 60 Insulating film

[0370] 60a Opening

[0371] 71 First P-side electrode

[0372] 72 Second P-side electrode

[0373] 73 Pad electrode

[0374] 73a Eave portion

[0375] 73ft Upper surface

[0376] 80 N-side electrode

[0377] 81 First conductive layer

[0378] 82 Second conductive layer

[0379] 91 Resist film

[0380] Ax Optical axis

[0381] De Isolation region

[0382] G Wing portion

[0383] Gd Lower wing portion

[0384] Gu Upper wing portion

[0385] H1 Front protrusion

[0386] H2 Rear protrusion

[0387] H21 First region

[0388] H22 Second region

[0389] L1 Front bottom

[0390] L2 Rear bottom

[0391] R Ridge

[0392] Rd Lower ridge

[0393] Ru Upper ridge

[0394] T and Te groove parts

Claims

1. A semiconductor light-emitting element is an end-face light-emitting type semiconductor light-emitting element that has a waveguide between a front end face and a rear end face and emits light from the front end face. The semiconductor light-emitting element includes: a substrate; a semiconductor laminate disposed above the substrate and having the waveguide; a first P-side electrode disposed above the semiconductor laminate; and a pad electrode disposed above the first P-side electrode. On the upper surface of the semiconductor light-emitting element and above the waveguide of the semiconductor light-emitting element, the semiconductor light-emitting element has a front bottom, a rear bottom, a front protrusion, and a rear protrusion. The front bottom extends rearward from the front end face, and the pad electrode is not disposed on the front bottom. The rear bottom is disposed behind the front bottom. The front protrusion is disposed between the front bottom and the rear bottom and protrudes upward with respect to the front bottom and the rear bottom. The rear protrusion is disposed behind the rear bottom and protrudes upward with respect to the front bottom and the rear bottom. The pad electrode is not disposed on the front bottom. The rear protrusion includes at least a part of the pad electrode.

2. The semiconductor light-emitting element according to claim 1, wherein the front protrusions are intermittently disposed in a direction along the front end face.

3. The semiconductor light-emitting element according to claim 1, wherein the height of the front protrusion is lower than the height of the rear protrusion.

4. The semiconductor light-emitting element according to claim 3, wherein the difference between the height of the front protrusion and the height of the rear protrusion is 1 μm or less.

5. The semiconductor light-emitting element according to any one of claims 1, 3, and 4, wherein the front protrusion includes a part of the pad electrode, and the pad electrode in the front protrusion has a shape of a regular trapezoid in a cross-section perpendicular to the front end face and parallel to the stacking direction of the semiconductor laminate.

6. The semiconductor light-emitting element according to claim 5, wherein the inclination angle of the regular trapezoid shape is 40 degrees or less.

7. The semiconductor light-emitting element according to any one of claims 1 to 6, wherein the semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode, and the first P-side electrode is exposed at least in part on the upper surfaces of the front bottom and the rear bottom.

8. The semiconductor light-emitting element according to any one of claims 1 to 7, wherein a covering film is provided on the front end face, the front bottom, and the front face of the front protrusion, and the covering film is not provided on the rear face of the front protrusion.

9. The semiconductor light-emitting element according to any one of claims 1 to 8, wherein the semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode, and the second P-side electrode has a barrier layer that includes at least one of Ti, Pt, and Cr.

10. The semiconductor light-emitting element according to any one of claims 1 to 9, The front protruding portion includes a part of the pad electrode.

11. The semiconductor light-emitting element according to any one of claims 1 to 9, The front protruding portion includes a part of the pad electrode, The semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode, The second P-side electrode disposed at the front bottom and the rear bottom is separated from the pad electrode in the front protruding portion, The second P-side electrode disposed at the rear bottom is separated from the pad electrode in the rear protruding portion.

12. A semiconductor light-emitting element, which is an end-face light-emitting type semiconductor light-emitting element having a waveguide between a front end face and a rear end face and emitting light from the front end face, The semiconductor light-emitting element includes: A substrate; A semiconductor laminate disposed above the substrate and having the waveguide; A first P-side electrode disposed above the semiconductor laminate; And A pad electrode disposed above the first P-side electrode, On the upper surface of the semiconductor light-emitting element and above the waveguide of the semiconductor light-emitting element, the semiconductor light-emitting element has a front bottom and a rear protruding portion, The front bottom extends rearward from the front end face, The rear protruding portion is disposed behind the front bottom and protrudes upward relative to the front bottom, The pad electrode is not disposed at the front bottom, The rear protruding portion includes at least a part of the pad electrode, The rear protruding portion has a first region and a second region, The first region is located above the optical axis of the light, The second region is adjacent to the first region in a lateral direction perpendicular to the light propagation direction and the lamination direction of the semiconductor laminate, The distance from the front end face to the front end of the first region is greater than the distance from the front end face to the front end of the second region.

13. The semiconductor light-emitting element according to claim 12, The semiconductor laminate has a ridge portion and a groove portion disposed along the ridge portion, The second region covers the groove portion.

14. The semiconductor light-emitting element according to claim 12 or 13, On the upper surface of the semiconductor light-emitting element and above the waveguide of the semiconductor light-emitting element, the semiconductor light-emitting element has a rear bottom and a front protruding portion, The rear bottom is disposed between the front bottom and the rear protruding portion, The front protruding portion is disposed between the front bottom and the rear bottom and protrudes upward relative to the front bottom and the rear bottom, The rear protruding portion protrudes upward relative to the rear bottom.

15. The semiconductor light-emitting element according to claim 14, The distance from the front end face to the front end of the front protruding portion is smaller than the distance from the front end face to the front end of the second region.

16. The semiconductor light-emitting element according to any one of claims 1 to 4, 14, and 15, The front protruding portion includes a part of the semiconductor laminate.

17. A semiconductor light-emitting device includes a semiconductor light-emitting element according to any one of claims 1 to 11 and 14 to 16, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode. Each of the front protruding portion and the rear protruding portion includes a part of the second P-side electrode. The bonding member is disposed from the second P-side electrode included in the front protruding portion to the second P-side electrode included in the rear protruding portion.

18. A semiconductor light-emitting device includes a semiconductor light-emitting element according to claim 2, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The front protruding portion has a plurality of continuous regions and one or more void regions. Each of the plurality of continuous regions is a region protruding upward with respect to the front bottom portion and the rear bottom portion. Each of the one or more void regions is located between two adjacent continuous regions among the plurality of continuous regions and is a region that does not protrude upward with respect to the front bottom portion and the rear bottom portion. The bonding member is disposed in the one or more void regions.

19. A semiconductor light-emitting device includes a semiconductor light-emitting element according to claim 2, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The front protruding portion has a plurality of continuous regions and one or more void regions. Each of the plurality of continuous regions is a region protruding upward with respect to the front bottom portion and the rear bottom portion. Each of the one or more void regions is located between two adjacent continuous regions among the plurality of continuous regions and is a region that does not protrude upward with respect to the front bottom portion and the rear bottom portion. The bonding member extends from the one or more void regions to a position in front of the front protruding portion.

20. A semiconductor light-emitting device includes a semiconductor light-emitting element according to any one of claims 12 to 15, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The bonding member located in front of the first region is not disposed in front of the front end face. The bonding member located in front of the second region extends from the front bottom portion to a position in front of the front end face.

21. A semiconductor light-emitting device includes a semiconductor light-emitting element according to any one of claims 1 to 11 and 14 to 16, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink. The semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode. Each of the rear bottom portion and the rear protruding portion includes a part of the second P-side electrode. The rear protruding portion includes a part of the pad electrode, The pad electrode included in the rear protruding portion is separated from the bonding member.

22. A semiconductor light-emitting device includes the semiconductor light-emitting element according to claim 14 or 15, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink, The semiconductor light-emitting element includes a second P-side electrode disposed above the first P-side electrode and the pad electrode, Each of the rear bottom portion and the rear protruding portion includes a part of the second P-side electrode, The rear protruding portion includes a part of the pad electrode, At least one of the pad electrode in the first region and the pad electrode in the second region is separated from the bonding member.

23. A semiconductor light-emitting device includes the semiconductor light-emitting element according to any one of claims 1 to 11, 14, and 15, a heat sink, and a bonding member that bonds the upper surface of the semiconductor light-emitting element to the heat sink, The front protruding portion includes a part of the pad electrode, The pad electrode included in the front protruding portion is separated from the bonding member.

24. A method for manufacturing a semiconductor light-emitting element is a method for manufacturing an end-face light-emitting type semiconductor light-emitting element that has a waveguide between a front end face and a rear end face and emits light from the front end face, The manufacturing method includes the following steps: A step of forming a semiconductor laminate having the waveguide; A step of forming a first P-side electrode above the semiconductor laminate; A step of forming a pad electrode above the first P-side electrode ； and A step of forming the front end face and the rear end face, On the upper surface of the semiconductor light-emitting element and above the waveguide of the semiconductor light-emitting element, there are formed: A front bottom portion extending rearward from the front end face; A rear bottom portion disposed behind the front bottom portion; A front protruding portion disposed between the front bottom portion and the rear bottom portion and protruding upward with respect to the front bottom portion and the rear bottom portion; and A rear protruding portion disposed behind the rear bottom portion and protruding upward with respect to the front bottom portion and the rear bottom portion, The pad electrode is not disposed on the front bottom portion, The rear protruding portion includes at least a part of the pad electrode.

25. The method for manufacturing a semiconductor light-emitting element according to claim 24, The front protruding portion is formed discontinuously in the direction along the front end face.

26. The method for manufacturing a semiconductor light-emitting element according to claim 24 or 25, In the step of forming the semiconductor laminate, the semiconductor laminate is formed above a substrate material, The method for manufacturing a semiconductor light-emitting element includes: A step of forming a cleavage end face by cleaving the substrate material; and A step of forming the front end face by forming a covering film on the cleavage end face, The covering film is continuously formed from the cleavage end face to the front bottom portion.

27. The method for manufacturing a semiconductor light-emitting element according to any one of claims 24 to 26, In the process of forming the pad electrode, at least a part of the front protruding portion and the rear protruding portion is formed.

28. The method of manufacturing a semiconductor light-emitting element according to any one of claims 24 to 26, In the process of forming the semiconductor laminate, at least a part of the front protruding portion is formed.

29. A method of manufacturing a semiconductor light-emitting device, which is a method of manufacturing a semiconductor light-emitting device including the semiconductor light-emitting element, a heat sink, and a bonding member, comprising: The method of manufacturing a semiconductor light-emitting element according to any one of claims 24 to 28; and A process of bonding the upper surface of the semiconductor light-emitting element to the heat sink using the bonding member.

30. The method of manufacturing a semiconductor light-emitting device according to claim 29, The method of manufacturing the semiconductor light-emitting element includes a process of forming a second P-side electrode above the first P-side electrode and the pad electrode, The front protruding portion includes a part of the pad electrode, The second P-side electrodes disposed on the front bottom and the rear bottom are separated from the pad electrode included in the front protruding portion.

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