Optoelectronic component with integrated aperture mask

Abstract

A non-uniform edge region (503) of an organic optoelectronic component (1, 1 ') causes artifacts in the optical signal of the component, in order to mask the non-uniform edge region (503), it is known that an aperture mask is bonded on the encapsulation structure of the component after deposition of all layers of the component is completed. Alignment of aperture masks not only results in additional work content, but also results in considerable errors. The invention overcomes these disadvantages by depositing at least one anti-radiation layer (3), preferably by means of a coating method, directly on a radiation coupling layer (4) covering the entire sensitive area (501) such that the at least one anti-radiation layer (3) is integrally connected to the radiation coupling layer (4), the at least one anti-radiation layer (3) covers the edge region (503) of the photodetector (5) of the optoelectronic component (1, 1 ') and does not exceed 30% of the selective region (502).

Description

Field of the Invention

[0001] The present invention relates to a photoelectric component in the form of a layer stack, which comprises a photodetector having a sensitive area formed by a selective area and an edge area surrounding the selective area, wherein the photodetector comprises at least one photoactive layer located between two spaced electrodes (a first electrode and a second electrode). The first electrode is arranged in front of the second electrode in the irradiation direction and is at least semi-transparent to electromagnetic radiation having a wavelength to be detected. Background Art

[0002] Photoelectric detectors are used for the qualitative and / or quantitative detection of electromagnetic radiation. This detection can be carried out in a spectrally selective manner, in which case the radiation is detected within a predefined specific wavelength range. In the photoactive layer of a photodetector, electromagnetic radiation is converted into a pair of charge carriers consisting of electrons and defect electrons (holes). Organic photodetectors typically have a photoactive layer that contains an organic electron donor compound (abbreviated as donor compound or donor, D) and an organic electron acceptor compound (abbreviated as acceptor compound or acceptor, A), where the donor is a material capable of releasing electrons and receiving defect electrons or holes, and the acceptor is a material capable of receiving electrons. In order to generate an electrical signal, separation of the pair of charge carriers is necessary and can be carried out at the interface between the donor and the acceptor. Once the pair of charge carriers is separated, the holes in the donor and the electrons in the acceptor are transported to the electrodes.

[0003] The photoactive layer of a photodetector can comprise, for example, a mixed layer formed from a donor material and an acceptor material, which is commonly referred to as a "D:A blend" or a "bulk heterojunction blend".

[0004] Photoelectric detectors are generally designed to detect one specific wavelength or multiple specific wavelengths or one or more specific wavelength ranges of the total spectrum of electromagnetic radiation, which are hereinafter referred to as the "wavelengths to be detected" or the "wavelength ranges to be detected". The wavelengths to be detected are determined by, for example, the bandgap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the donor compound and the acceptor compound. It is also possible to directly optically excite an intermolecular charge transfer state (CT state) at the interface between the donor compound and the acceptor compound. Viewed in isolation, the donor compound and the acceptor compound do not necessarily have to absorb within the wavelength range to be detected, i.e., the bandgap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the donor compound and the acceptor compound does not necessarily have to correspond to the energy equivalent within the wavelength range to be detected. Instead, the energy of a photon of electromagnetic radiation that can be absorbed via the CT state generally corresponds to the difference between the higher energy HOMO of one compound and the lower energy LUMO of another compound, or even slightly less than this difference.

[0005] Lateral deviations in the thickness of the photoactive layer of a photodetector can lead to artifacts in the spectral response of the photodetector, especially when its photoactive layer is disposed between two mirrors, i.e., disposed in an optical microcavity, which in turn can lead to inaccurate or erroneous optical signal evaluation. Here, the "thickness" of the layer refers to the extent of the layer in a direction parallel to the surface normal of the layer, which direction generally also corresponds to the irradiation direction.

[0006] Correspondingly, the "lateral direction" refers to the direction perpendicular to the thickness determination direction.

[0007] The irradiation direction corresponds to the main direction in which the electromagnetic radiation to be detected is incident on the optoelectronic component after interacting with the sample to be inspected.

[0008] When depositing an organic layer, for example by means of a PVD method such as hot gas phase deposition, uncontrollable thickness deviations often occur in the edge region of the photoactive layer because the organic layer cannot be deposited with an ideal constant cross-section (e.g., an ideal cubic cross-section). The edge region contains a transition region until the complete, desired layer thickness is reached, during which the increase in layer thickness is usually not necessarily linear but increases uniformly. The lateral extent of the region where thickness deviations occur during deposition is typically between a few tens of micrometers and 150 micrometers, for example 50 μm. However, the alignment accuracy of the layer deposition mask can usually only reach a few hundred micrometers (e.g., 200 μm), so in the edge region with a lateral extent of about 50 μm to 300 μm, undesired layer thickness variations may occur due to the offset between the deposition masks. These deviations can lead to artifacts, which may have a negative impact on the optical signal. Especially in the case of a photodetector with an optical microcavity, undesired, non-selective optical signals may also occur because the regions of the photodetector not disposed between the mirrors are irradiated. To avoid the above-mentioned undesired effects, it is known to cover the edge region with a mask that is opaque to radiation in the wavelength range to be detected. The mask is usually composed of a metallic material and has an aperture consistent with the shape and size of the selective region of the photodetector, so as not to significantly reduce the size of the selective region of the photodetector and avoid significantly reducing the radiation power available for detection.

[0009] In the prior art, the aperture mask is subsequently placed on the photodetector, i.e., after all layers of the photodetector are completely deposited and the encapsulation is completed, and thus must be placed and fixed with micrometer accuracy, for example bonded to the encapsulation structure.

[0010] One disadvantage of this method is that a large amount of post-processing work is required after the photodetector is manufactured, and the placement of the aperture mask is also an important source of error. Summary of the Invention

[0011] Accordingly, an object of the present invention is to overcome the above disadvantages and to provide an optoelectronic component which does not require any post-processing work in the subsequent placement of the aperture mask.

[0012] This object is achieved by the optoelectronic component according to claim 1, the associated arrangement of the optoelectronic components according to claim 5, the method for producing an optoelectronic component according to claim 6, and the use of the optoelectronic component or arrangement according to claim 7. Further embodiments of the present invention are defined in the dependent claims.

[0013] In the present invention, the aperture mask is no longer arranged outside the encapsulation layer stack of the photodetector, but is integrated into the layer stack.

[0014] The optoelectronic component in the form of a layer stack according to the present invention comprises at least one photodetector which comprises at least one photoactive layer located between two spaced-apart electrodes (a first electrode and a second electrode). The photoactive layer is irradiated through the first electrode, and thus the first electrode is designed to be at least semi-transparent to electromagnetic radiation in the wavelength range to be detected. The sensitive area of the photodetector is divided into a selective area and a peripheral area which surrounds the selective area in a frame-like manner.

[0015] According to the present invention, at least one radiation coupling layer is arranged in front of the photodetector, which completely covers the sensitive area of the photodetector, i.e., covers both the selective area and the peripheral area. At least one radiation shielding layer is arranged in front of the radiation coupling layer. In the present invention, "radiation shielding" means that this layer has a high absorbance, preferably a high reflectance, for electromagnetic radiation having the wavelength to be detected which is incident on the optoelectronic component, the absorbance or reflectance preferably being at least 80%, particularly preferably at least 90%, very particularly preferably at least 95%. The at least one radiation shielding layer is integrally connected to the radiation coupling layer. In a preferred embodiment of the present invention, the at least one radiation shielding layer is inseparably connected to the radiation coupling layer by means of a coating method (for example, by means of hot vapor deposition). The at least one radiation shielding layer is arranged to cover at least a part of the peripheral area of the photodetector, but not more than 30% of the selective area of the photodetector. Those skilled in the art are well aware that the typical alignment accuracy of the mask for layer deposition cannot avoid a small area coverage of the selective area. Preferably, the at least one radiation shielding layer covers not more than 20% of the selective area of the photodetector, particularly preferably not more than 10%.

[0016] The optoelectronic component according to the present invention can have a plurality of radiation shielding layers which are arranged offset laterally with respect to one another.

[0017] The edge region of the photodetector covered by the radiation protection layer is protected from electromagnetic radiation, thus preventing the influence on signal generation in the photodetector. Therefore, the radiation protection layer provides a defined aperture through which the selective region of the photodetector is irradiated. The photoactive layer of the photodetector corresponding to the selective region has a sufficiently uniform thickness.

[0018] In the present invention, the "selective region" of the photodetector is understood to refer to the laterally extending region of the photodetector that is sensitive to incident electromagnetic radiation having the wavelength to be detected, and corresponding to this region, the photoactive layer of the photodetector has a sufficiently uniform thickness so as not to cause artifacts in the spectral response due to thickness deviations.

[0019] In the present invention, the "sensitive region" of the photodetector is the laterally extending region of the photodetector that is sensitive to incident electromagnetic radiation having the wavelength to be detected, and the incident electromagnetic radiation generates a measurable optical signal within this region. The measurable optical signal can be caused by electromagnetic radiation having the wavelength to be detected and can also contain unwanted components caused by electromagnetic radiation having a wavelength different from the wavelength to be detected.

[0020] In this sense, the "edge region" corresponds to the part of the sensitive region of the photodetector that does not belong to the selective region.

[0021] The direction or position parameters "front", "rear" and "below" are related to the irradiation direction. Thus, if the first layer is arranged "in front of" the second layer, the incident electromagnetic radiation first irradiates the first layer and then irradiates the second layer.

[0022] The optoelectronic component or an arrangement consisting of a plurality of optoelectronic components can be provided with an irradiation system that emits electromagnetic radiation, such as electromagnetic radiation having the wavelength to be detected. The electromagnetic radiation is detected by the optoelectronic component after being reflected from the sample to be detected or after passing through the sample to be detected.

[0023] According to the present invention, one of the two electrodes of the optoelectronic component is referred to as the "first electrode", and the optoelectronic component can be irradiated through this first electrode. For example, the first electrode is at least transparent for the wavelength to be detected.

[0024] If the first electrode has a reflective region that forms a mirror surface of an optical microcavity, the first electrode can be designed to be at least semi-transparent within at least the wavelength range to be detected, such that radiation within at least the wavelength range to be detected can be transmitted through the first electrode but can also be reflected by the reflective region of the electrode.

[0025] Depending on the irradiation direction and the configuration of the optoelectronic component, the first electrode can be the bottom electrode, i.e., the electrode arranged closest to the substrate, or the top electrode, i.e., the electrode arranged farthest from the substrate.

[0026] The first and second electrodes may be composed of a layer system formed by a plurality of independent layers stacked on top of each other. For example, one or both electrodes of the present invention may have a mirror layer and / or a layer for improving the nucleation behavior of adjacent layers.

[0027] The optoelectronic component according to the present invention can be connected to a readout unit for reading out (and preferably also for further processing) the electrical signals generated by the optoelectronic component.

[0028] The optoelectronic component according to the present invention can be arranged on a substrate, which can be rigid, partially flexible, or flexible. Depending on the direction in which the optoelectronic component is irradiated, it is advantageous for the substrate to be at least transparent for the wavelength to be detected, so that the optoelectronic component can be irradiated through the substrate.

[0029] An advantage of the optoelectronic component according to the present invention is that an aperture mask comprising at least one radiation protection layer does not have to be placed externally on the optoelectronic component and aligned. In the present invention, the aperture mask is inseparably integrated into the optoelectronic component as a constituent part of the layer stack. Therefore, no post-processing work is required when subsequently arranging the aperture mask on the layer stack of the optoelectronic component, for example, when arranging it on a packaging structure.

[0030] A further advantage of the present invention is that a radiation coupling layer is arranged between the first electrode of the photodetector and the radiation protection layer, which serves as an electrical isolation, thereby increasing the optical signal by influencing the distribution of the light field and the amplitude of the light field in the photoactive layer. Additionally, external reflections of the first electrode can be reduced by the radiation coupling layer.

[0031] The material of the radiation coupling layer preferably has as high a transparency as possible and a refractive index suitable for increasing the optical signal in the wavelength range to be detected, including but not limited to, organic semiconductor materials such as Alq 3 (aluminum(III) tris(8-hydroxyquinoline)), BF-DPB (N,N'-bis(9,9-dimethyl-9H-fluoren-2-yl)-N,N'-diphenylbenzidine), C 60 etc.

[0032] The at least one radiation protection layer is preferably made of a metallic material, particularly preferably made of aluminum. Alternatively, the at least one radiation protection layer is preferably made of a dielectric mirror material.

[0033] Preferably, the part of the radiation protection layer that protrudes beyond the edge region of the photodetector it covers is typically several hundred micrometers, for example 250 μm, but does not protrude significantly into the selective region of the photodetector, for example, does not reduce the size of the selective region by more than 30%, preferably not by more than 20%, and particularly preferably not by more than 10%.

[0034] Preferably, the radiation coupling layer protrudes beyond the at least one radiation protection layer, typically by several hundred micrometers, for example 250 μm.

[0035] Other layers may also be provided between the two electrodes of the photodetector. Preferably, the photodetector has a charge carrier transport layer, for example, a hole transport layer (HTL) disposed between the photoactive layer and the hole collecting electrode (usually the top electrode), and / or an electron transport layer (ETL) disposed between the photoactive layer and the electron collecting electrode (usually the bottom electrode). To improve the transport characteristics, the ETL typically has an n-type doping, and the HTL has a p-type doping. To improve the extraction of charge carriers from the photoactive layer, an undoped transport layer may be inserted between the photoactive layer and the doped transport layer.

[0036] To reduce harmful environmental impact effects, the optoelectronic component may have a packaging structure. The layer structure of the optoelectronic component is sealed with respect to the environment by means of the packaging structure and the substrate. The entire layer structure of the optoelectronic component according to the invention is arranged within the packaging structure.

[0037] In addition to the layers already mentioned, the optoelectronic component according to the invention may also comprise other layers, such as an optically transparent spacer layer.

[0038] For the layer structure of the optoelectronic component of the present invention, there are two main configuration modes, which are generally determined by the irradiation direction of the incident electromagnetic radiation.

[0039] In the "bottom irradiation" configuration, the optoelectronic component is irradiated through the substrate and the bottom electrode. The at least one radiation protection layer may be directly deposited (e.g., by vapor deposition) on a substrate made of, for example, glass or plastic. The deposition occurs only at those positions that at least partially form the edge region of the photodetector, and no deposition occurs at the positions of the selective regions of the photodetector within the alignment accuracy of the deposition mask. Subsequently, the radiation coupling layer is deposited on both the radiation protection layer and the substrate. Then, at least a semi-transparent first electrode (here the bottom electrode) and other layers of the photodetector are further provided, and finally a second electrode (here the top electrode) is provided, which may be opaque in the wavelength range to be detected.

[0040] In the "top irradiation" configuration, the incident electromagnetic radiation enters the photodetector through the top electrode, and the deposition direction of the layers of the optoelectronic component is opposite to the irradiation direction. First, the second electrode (here the bottom electrode) of the photodetector is deposited on the substrate, and the remaining layers of the photodetector are deposited on the second electrode. Finally, at least a semi-transparent first electrode (here the top electrode) is provided. The radiation coupling layer is provided on the first electrode, covering the selective area and the edge area of the photodetector. In the edge area of the photodetector, a radiation protection layer is provided on the radiation coupling layer. Since the irradiation is carried out through the top electrode instead of the substrate, the top electrode can be opaque in the wavelength range to be detected.

[0041] Multiple optoelectronic components according to the present invention can be combined to form an arrangement, for example, in the form of a grid or a line or in any other configuration. Preferably, in this arrangement, multiple optoelectronic components according to the present invention are different from each other in terms of the wavelength to be detected, that is, these components are optimized to detect different wavelength ranges. Preferably, the multiple optoelectronic components are provided on the same substrate. In this arrangement, the radiation coupling layer can cover the sensitive areas of multiple photodetectors. Similarly, at least one radiation protection layer can cover the edge areas of multiple photodetectors. For example, the multiple radiation protection layers can be deposited on the radiation coupling layer or the substrate in a manner that they are laterally offset from each other. The first radiation protection layer can cover, for example, the first edge area of multiple photodetectors, and the second radiation protection layer that is laterally offset from the first radiation protection layer can cover the second edge area of the aforementioned multiple photodetectors.

[0042] During the production of the optoelectronic component according to the present invention, the radiation coupling layer and the radiation protection layer are inseparably connected to each other by means of a coating method (for example, hot vapor deposition). Then the optoelectronic component is encapsulated.

[0043] The optoelectronic component according to the present invention or the arrangement of the optoelectronic components according to the present invention is preferably used to detect electromagnetic radiation in the visible light and NIR wavelength ranges (wavelengths between 380 nm and 3000 nm). Description of the Drawings

[0044] The present invention will be explained below with the aid of exemplary embodiments and with reference to the drawings, but the present invention is not limited thereto. In the drawings:

[0045] Figure 1 is a schematic side view of the layer stack of the optoelectronic component irradiated through the substrate and the bottom electrode according to the present invention (bottom irradiation).

[0046] Figure 2 is a schematic side view of the layer stack of the optoelectronic component irradiated through the top electrode according to the present invention (top irradiation).

[0047] Figure 3 It is a schematic plan view in which four optoelectronic components according to the present invention are arranged in a grid pattern.

[0048] Figure 4a and Figure 4b shows different EQE measurement values when 16 optoelectronic components with different wavelengths to be detected according to the present invention are arranged in a first grid pattern, where Figure 4a the optoelectronic components in Figure 4b do not have a radiation coupling layer and an integrated aperture mask, while

[0049] Figure 5a and Figure 5b shows different EQE measurement values when 16 optoelectronic components with different wavelengths to be detected according to the present invention are arranged in a second grid pattern, where Figure 5a the optoelectronic components in Figure 5b have a radiation coupling layer but do not have an integrated aperture mask, while

[0050] Description of reference numerals

[0051] 1 Optoelectronic component (bottom irradiation)

[0052] 1' Optoelectronic component (top irradiation)

[0053] 10 Arrangement of multiple optoelectronic components

[0054] 100 Irradiation direction

[0055] 2 Substrate

[0056] 3, 3a, 3b, 3c Anti-radiation layer

[0057] 4 Radiation coupling layer

[0058] 5, 5a, 5b, 5c, 5d Photodetector

[0059] 501 Sensitive area of the photodetector

[0060] 502 Selective area of the photodetector

[0061] 503 Edge area of the photodetector

[0062] 51 First electrode

[0063] 52 Second electrode. Detailed implementation manners

[0064] Figure 1It is a side view of the optoelectronic component 1 with bottom irradiation. The optoelectronic component 1 is designed as a layer stack. An irradiation source (not shown) irradiates the optoelectronic component 1 along the irradiation direction 100 through the substrate 2 and then interacts with a sample to be inspected (not shown). The substrate 2 can be a glass or plastic or silicon substrate, and the substrate 2 is correspondingly designed to be transparent to the electromagnetic radiation incident on the optoelectronic component 1, which has a wavelength to be detected, for example, a wavelength in the NIR range of the electromagnetic spectrum.

[0065] Two radiation-shielding metal layers 3 are vapor-deposited on the area of the substrate 2. These two radiation-shielding metal layers are arranged offset laterally from each other and are formed of aluminum with a thickness of, for example, 200 nm. A radiation coupling layer 4 is arranged between the radiation-shielding layer 3 and the photodetector 5. The radiation coupling layer 4 consists of an organic semiconductor material (for example, the electron transport material C60) and generally has a thickness on the order of 100 nm, for example, 200 nm or 500 nm. The photodetector 5 includes a first electrode 51 (bottom electrode, electron collection) and a second electrode 52 (top electrode, hole collection). Between these two electrodes, an electron transport layer (ETL) 53, a photoactive layer 54, and a hole transport layer (HTL) 55 are sequentially arranged along the irradiation direction 100. The sensitive area 501 of the photodetector 5 is divided into a selective area 502 and a peripheral area 503 surrounding the selective area 502. The sensitive area 501 is oriented perpendicular to the image plane. The radiation-shielding layer 3 is arranged at least on a part of the peripheral area 503 and, within the deposition accuracy, corresponds to and overlaps with the peripheral area 503 only in a manner that does not cover the selective area 502. The peripheral area 503 can also be only partially covered by the radiation-shielding layer 3, that is, only a part of the peripheral area 503 is covered, while other parts of the peripheral area can be uncovered, especially the parts that cause only minor artifacts in the optical signal because the electrodes are arranged in front of this part. In contrast, the radiation coupling layer 4 covers at least the entire sensitive area 501 and overlaps with all its sides.

[0066] In the wavelength range to be detected, the radiation-shielding layer 3 has a reflectivity of at least 80%, particularly preferably at least 90%, and very particularly preferably at least 95%, such that most of the electromagnetic radiation incident on the area of the optoelectronic component 1 provided with the radiation-shielding layer 3 will be reflected and thus will not irradiate the layers arranged behind the radiation-shielding layer 3, especially will not irradiate the photoactive layer 54.

[0067] In Figure 2In the illustrated optoelectronic component 1', the top electrode serves as the first electrode 51, and the bottom electrode serves as the second electrode 52, i.e., the optoelectronic component 1' is irradiated in the irradiation direction 100 through the top electrode 51. The radiation coupling layer 4 is deposited on the top electrode 51 and covers at least the entire sensitive area 501. The radiation coupling layer 4 can comprise, for example, a hole transport material BF-DPB. The photoactive layer 54 is arranged between the two electrodes 51, 52 of the photodetector 5. The photodetector 5 comprises a hole transport layer (HTL) 55 between the photoactive layer 54 and the top electrode 55 for hole collection, and an electron transport layer (ETL) 53 between the bottom electrode 52 for electron collection and the photoactive layer 54. The two anti-radiation layers 3 are arranged on the radiation coupling layer 4 offset from each other transversely and cover only two parts of the edge region 503 of the photodetector 5 and extend beyond these two parts, thus protruding slightly in the transverse direction, but within the deposition accuracy range, not protruding in the direction of the selective region 502. Thus, only the region of the photoactive layer 54 located below the selective region 502 is irradiated, while the region located below the edge region 503 is not irradiated.

[0068] The top-irradiated optoelectronic component according to the invention can comprise, for example, the following layer sequence of specified thicknesses (listed in the opposite direction to the irradiation direction): substrate (1.1 mm glass) - opaque bottom electrode with mirror (3 nm of MoO 3 – 1 nm of Au – 100 nm of Ag) - ETL (50 nm of n-type doped C 60 – photoactive layer (300 nm of C 60 :ZnPc) - HTL (50 nm of p-type doped MeO-TPD) – partially transparent top electrode (3 nm of MoO 3 – 1 nm of Au – 20 nm of Ag) - radiation coupling layer (200 nm of C 60 ) - anti-radiation layer (200 nm of Al).

[0069] Once the deposition is completed, the layer sequence is isolated from the environment by means of a protective glass in an inert atmosphere.

[0070] Figure 3is a plan view in the irradiation direction (z - direction, into the plane of the drawing) of a 2×2 arrangement 10 of four top - irradiated photodetectors 5a, 5b, 5c, 5d located on the same substrate 2. The sensitive areas 501 of all four photodetectors 5a, 5b, 5c, 5d are completely covered by a common radiation - coupling layer 4, which laterally protrudes beyond the four photodetectors 5a, 5b, 5c, 5d in all directions (x, - x, y, - y). The sensitive area 501 of each photodetector 5a, 5b, 5c, 5d is divided into a selective area 502 and a frame - shaped marginal area 503 surrounding the selective area 502, as shown by way of example for the upper - right photodetector 5b. Three anti - radiation layers 3a, 3b, 3c are provided on the common radiation - coupling layer 4. The anti - radiation layer 3a covers the first part extending in the x - direction of the marginal areas 503 of two photodetectors 5a and 5b (arranged laterally offset from each other in the x - direction), and protrudes beyond the first part in the x, - x, and - y directions, such that the selective areas 502 of the photodetectors 5a and 5b are not covered within the deposition accuracy, thereby enabling complete irradiation. The anti - radiation layer 3c covers the first part extending in the x - direction of the marginal areas 503 of two photodetectors 5c and 5d (arranged laterally offset from each other in the x - direction), and protrudes beyond the first part in the x, - x, and y directions, such that the selective areas 502 of the photodetectors 5c and 5d are not covered within the deposition accuracy, thereby enabling complete irradiation. The anti - radiation layer 3b covers the second part extending in the x - direction of the marginal areas 503 of all photodetectors 5a, 5b, 5c, 5d, and protrudes beyond the second part in the x and - x directions and also in the y - direction for the photodetectors 5c and 5d, and in the - y direction for the photodetectors 5a and 5b, without covering the selective areas 502 of the photodetectors 5a, 5b, 5c, 5d within the deposition accuracy. In Figure 3 the part of the marginal areas 503 of the photodetectors 5a, 5b, 5c, 5d extending in the y - direction is not covered by the anti - radiation layer because the top electrode is at least partially provided in front of this part, with the result that the artifacts caused by the part of the marginal area extending in the y - direction are significantly less than those caused by the part of the marginal area extending in the x - direction and not covered by the top electrode. It should be understood that covering this part of the marginal area 503 is also in line with the spirit of the present invention.

[0071] Figure 4a and Figure 4b shows the correspondence between the measured EQE values and the wavelength when 16 optoelectronic components are arranged in a first grid pattern, where multiple components are optimized for different wavelengths to be detected, that is, for each optoelectronic component, each wavelength has a corresponding maximum measured EQE value, that is, Figure 4a and Figure 4bIndicates a case of 16 different wavelengths. Figure 4a Shows the EQE measurement values of this setting without a radiation coupling layer and a radiation protection layer (i.e., without an integrated aperture mask). Figure 4b Shows the EQE measurement values of the same setting, where the radiation coupling layer completely covers the entire setting, i.e., completely covers the sensitive area of each of the 16 photodetectors of the associated optoelectronic component, while covering a plurality of radiation protection layers, where each radiation protection layer covers a part of the edge region of a plurality of photodetectors of the associated optoelectronic component. On the one hand, Figure 4a and Figure 4b The comparison shows that Figure 4b The maximum measured EQE values of all optoelectronic components in Figure 4a are higher than those in Figure 4b This can be interpreted as the effect of the radiation coupling layer. The increase ranges from 7% (when the optoelectronic component is used for lower wavelengths to be detected) to 40% (when the optoelectronic component is used for higher wavelengths to be detected). On the other hand, this comparison shows that the visible artifacts in the EQE curve at low wavelengths in Figure 4a are mitigated by the integrated aperture mask as in

[0072] When comparing Figure 5a and Figure 5b This effect can be seen more clearly. Figure 5a and Figure 5b Show the correspondence between the EQE measurement values and wavelengths when 16 optoelectronic components are arranged in a second grid pattern, where multiple components are optimized for different wavelengths to be detected, i.e., for each optoelectronic component, each wavelength has a corresponding maximum measured EQE value, that is, Figure 5a and Figure 5b Indicate a case of 16 different wavelengths. In the setting of Figure 5a , a common radiation coupling layer completely covers the sensitive areas of all 16 photodetectors of the associated optoelectronic component. In Figure 5b , a plurality of radiation protection layers are additionally provided on the radiation coupling layer, so that parts of the edge regions of all 16 photodetectors of the associated optoelectronic component are covered. Figure 5b Shows significantly reduced EQE measurement values at low wavelengths. Therefore, the shoulders at low wavelengths can be significantly mitigated by using an integrated aperture mask, and the shoulders at low wavelengths are visible in Figure 5a and are caused by uneven layer thicknesses in the edge region, as shown in Figure 5b .

Claims

1. An optoelectronic component (1, 1'), comprising a photodetector (5), the photodetector (5) having a sensitive area (501) formed by a selective area (502) and a peripheral area (503) surrounding the selective area (502), the photodetector (5) comprising at least one photoactive layer (54) disposed between two spaced-apart first electrodes (51) and second electrodes (52), the first electrode (51) being disposed in front of the second electrode (52) along the irradiation direction (100) and being at least semi-transparent with respect to electromagnetic radiation having a wavelength to be detected. Characterized in that, the optoelectronic component (1, 1') further comprises: - at least one radiation coupling layer (4), which is disposed in front of the photodetector (5) and completely covers the sensitive area (501) of the photodetector (5), and - at least one anti-radiation layer (3), which is disposed in front of the at least one radiation coupling layer (4), is integrally connected to the at least one radiation coupling layer (4), and covers at least a part of the peripheral area (503) of the photodetector (5) in a shielding manner, but does not exceed 30% of the selective area (502), so as to intercept electromagnetic radiation having a wavelength to be detected.

2. The optoelectronic component (1, 1') according to claim 1, Characterized in that, the at least one anti-radiation layer (3) is inseparably connected to the at least one radiation coupling layer (4) by a coating method.

3. The optoelectronic component (1, 1') according to claim 1 or 2, Characterized in that, the at least one anti-radiation layer (3) comprises a dielectric material.

4. The optoelectronic component (1, 1') according to claim 1 or 2, Characterized in that, the at least one anti-radiation layer (3) comprises a metal.

5. The optoelectronic component (1, 1') according to any one of the preceding claims, Characterized in that, the at least one radiation coupling layer (4) comprises an organic semiconductor material.

6. The optoelectronic component (1, 1') according to any one of the preceding claims, Characterized in that, the optoelectronic component (1, 1') is sealed with respect to the environment by encapsulation.

7. The optoelectronic component (1, 1') according to any one of the preceding claims, Characterized in that, the area covered by the at least one anti-radiation layer (3) does not exceed 20% of the selective area (502) of the optoelectronic component (1, 1'), preferably does not exceed 10%.

8. An arrangement (10) comprising at least two optoelectronic components (1, 1') according to any one of the preceding claims, the optoelectronic components (1, 1') being laterally offset from one another, each optoelectronic component comprising at least one optodetector (5a, 5b, 5c, 5d) arranged on the same substrate (2), wherein a radiation coupling layer (4) completely covers the sensitive areas (501) of at least two of the optodetectors (5a, 5b, 5c, 5d) of the optoelectronic components (1, 1') of the arrangement (10), and a radiation shielding layer (3) covers partial edge regions (503) of at least two of the optodetectors (5a, 5b, 5c, 5d) of the optoelectronic components (1, 1') of the arrangement (10).

9. A method for producing an optoelectronic component (1, 1') according to any one of claims 2 to 7, characterized in that the at least one radiation shielding layer (3) and the at least one radiation coupling layer (4) are inseparably connected to one another by a coating method.

10. A method for detecting electromagnetic radiation having a wavelength in the visible range and / or in the NIR range by means of an optoelectronic component (1, 1') according to any one of claims 1 to 7 or by means of an arrangement (10) according to claim 8.

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