Device for improving semiconductor laser bar cavity surface yield and application

Abstract

The invention relates to equipment for improving the yield of a bar cavity surface of a semiconductor laser and application, and belongs to the technical field of semiconductor lasers. The device comprises a static electricity removing ion blower gun, a universal bamboo joint pipe, a support, a shell and a controller, a step is arranged on one side in the shell, the static electricity removing ion blower gun is arranged on the step and connected with the controller, the universal bamboo joint pipe is arranged at an air outlet of the static electricity removing ion blower gun, and the support is arranged on the bottom face, on one side of the step, of the shell. And a bar clamp is arranged on the bracket. The device is low in maintenance cost, convenient to use and capable of effectively reducing particle pollution of the cavity surface before semiconductor laser bar coating, improving the cavity surface output rate, reducing the difficulty of manual pretreatment of the cavity surface and improving the production efficiency.

Description

Technical Field

[0001] The present invention relates to an apparatus and application for improving the yield of the cavity surface of a semiconductor laser bar, belonging to the technical field of semiconductor lasers. Background Art

[0002] Semiconductor lasers have the advantages of being all-solid-state, small in size, light in weight, long in life, and high in conversion efficiency. They are widely used in military, medical, optical communication, laser processing and other fields, with very broad application prospects, huge market demand and development potential.

[0003] In the process of semiconductor laser chip production, it is necessary to cleave the epitaxial wafer into laser bars with different cavity lengths. The cleavage surface of the resonant cavity is an important part of the laser. Under the action of high-power density laser, due to factors such as non-uniform near field, local overheating, oxidation, and corrosion, the cavity surface is damaged, resulting in catastrophic optical damage (COD) of the laser. Therefore, dielectric films are deposited on the front and rear cavity surfaces of the laser. The cavity surface coating can cover the cleavage cavity surface, prevent the oxidation of the active region of the laser, improve the reliability and stability, change the reflectivity of the cavity film, enable the laser to emit light from a single side while maintaining performance, and improve the output power and electro-optical conversion efficiency of the laser.

[0004] Particle contamination on the active region of the cavity surface of the laser bar before coating will directly affect the performance and reliability of the laser. The sources of particle contamination mainly include two aspects. On the one hand, it is the charge accumulation, adhesion and adsorption of the laser bar caused by static electricity, and the adsorption of dust-carrying objects. On the other hand, it is the large particle contamination and impurities deposited on the cavity surface. Particle contamination will cause the output power of the laser to decrease, the beam quality to deteriorate, and even the reliability of the laser to decrease;

[0005] At present, the following two methods are mainly used to deal with the particle contamination on the cavity surface before coating:

[0006] 1. Ar+ ion bombardment of the coating equipment. This method cannot remove pollutants with larger particles. At the same time, if the energy of the ion source is too high, it will damage the cavity surface, cause etching of the cavity surface, and further reduce the reliability of the laser. If the energy is too low, it will not achieve the effect of bombardment cleaning; The process implementation is relatively difficult;

[0007] 2. After the laser bars are arranged in rows, the cavity surface is inspected, and a sticky rod is used manually to remove dust, impurities, etc. on the cavity surface; This method requires a long time for manual work, has a great operation difficulty for personnel, and is likely to introduce new contamination while dealing with the cavity surface contamination;

[0008] Therefore, in order to reduce the proportion of cavity surface contamination of semiconductor laser bars, improve the qualification rate of the cavity surface of the laser bars, reduce the pre-treatment difficulty of personnel at the same time, and improve the production efficiency, the present invention is proposed. Summary of the Invention

[0009] In view of the deficiencies of the prior art, the present invention provides a device for improving the yield of the cavity surface of a semiconductor laser bar, which has low maintenance costs, is convenient to use, can effectively reduce the particle contamination of the cavity surface of the semiconductor laser bar before coating, improve the cavity surface yield, reduce the difficulty of manual pre-treatment of the cavity surface, and improve production efficiency.

[0010] In the negative pressure environment, the present invention uses an electrostatic-discharging deionized air gun, fixes the purging angle through a universal joint bamboo tube nozzle, and simultaneously purges the front and rear cavity surfaces of the laser bar with deionized air until the surface particle contamination is cleaned; at the same time, the present invention can pre-treat multiple jigs in batches, greatly improving the production efficiency of the cavity surface treatment of the laser bar.

[0011] The present invention also provides an application of the above device for improving the yield of the cavity surface of a semiconductor laser bar.

[0012] The technical solution of the present invention is as follows:

[0013] A device for improving the yield of the cavity surface of a semiconductor laser bar, comprising an electrostatic-discharging ion air gun, a universal joint bamboo tube, a bracket, a housing and a controller. There is a step on one side inside the housing, and the electrostatic-discharging ion air gun is arranged on the step. The electrostatic-discharging ion air gun is connected to the controller. A universal joint bamboo tube is arranged at the air outlet of the electrostatic-discharging ion air gun. A bracket is arranged on the bottom surface of the housing on one side of the step, and a laser bar jig is arranged on the bracket.

[0014] According to the present invention preferably, a mesh layer is arranged on the bottom surface and the side surface of the housing on one side of the step. An exhaust fan is arranged on one side of the housing. The particles are discharged into the housing through the mesh layer, and then the exhaust fan discharges dust particles, impurity contamination, etc., to maintain a dust-free environment.

[0015] According to the present invention preferably, the bracket is a cuboid frame. A plurality of rectangular through holes are arranged side by side on the top platform of the bracket. Clamp positioning bosses are arranged on the periphery of the rectangular through holes. The positions of the rectangular through holes correspond to the laser bars inside the laser bar jigs. The bracket can place multiple laser bar jigs at one time to improve the processing efficiency.

[0016] According to the present invention preferably, a slide rail is arranged on the mesh layer on the bottom surface of the housing. The bottom of the bracket is connected to the slide rail through a chute, so that the bracket can slide horizontally, facilitating the installation and use of the laser bar jig.

[0017] According to the present invention preferably, the electrostatic-discharging ion air gun comprises a high-voltage ionizer and a nitrogen pipe. The high-voltage ionizer is externally connected to nitrogen through the nitrogen pipe. A universal joint bamboo tube is arranged at the air outlet of the high-voltage ionizer.

[0018] According to the present invention preferably, 2 universal joint bamboo tubes are arranged at the air outlet of the high-voltage ionizer, and the 2 universal joint bamboo tubes are arranged vertically.

[0019] According to the present invention preferably, the interior of the housing is hollow, and a top cover is arranged on the top of the housing for convenient sealing.

[0020] The application of the above device for improving the yield of the cavity surface of the semiconductor laser bar is as follows:

[0021] (1) Install the bar in the bar fixture, move the bracket to one side of the housing, and then place the bar fixture on the bracket in sequence;

[0022] (2) Move the bracket to a position close to the step, and adjust the universal joint bamboo tube so that the upper and lower sides of each bar fixture respectively correspond to 1 universal joint bamboo tube;

[0023] (3) Start the high-voltage ionizer, form neutral charged ions by applying high voltage electricity. Under the action of air flow, the charged ions are ejected through the universal joint bamboo tube to the bar. On the one hand, it neutralizes the static charges on the surface of the bar cavity surface, solves the charge accumulation caused by static electricity, the adhesion and adsorption of the bar, and the adsorption of dust, reduces the quality defects in product production. On the other hand, through the generated high-speed ion air flow, the large particle pollution and impurities on the cavity surface are removed, so that the cavity surface remains clean;

[0024] (4) After the purging is completed, open the top cover, take out the bar fixture after the cleaning process, place it in a dust-free box for storage, and wait for mounting and coating.

[0025] Preferably according to the present invention, in step (2), the included angle between the universal joint bamboo tube and the bar cavity surface in the bar fixture is less than 15°, ensuring the cleaning effect.

[0026] The beneficial effects of the present invention are as follows:

[0027] 1. The present invention uses an electrostatic elimination ion air gun to precisely handle static electricity dust adhesion, large particle pollution, impurities, etc. on the bar cavity surface, reduces the particle pollution introduced by the cleavage and bar arrangement processes before coating, improves the cavity surface yield of the semiconductor laser bar, and improves the performance and reliability of the product.

[0028] 2. The present invention uses the universal joint bamboo tube design with a double channel to clean the front and rear cavity surfaces of the bar simultaneously, and can control the mode, time, and size of the ion air flow, improving the cleaning efficiency and effect of the bar cavity surface.

[0029] 3. The present invention is easy to operate, can achieve a sealed environment, and has an exhaust port designed on the right side to maintain a dust-free environment inside, reducing the risk of secondary particle pollution on the cavity surface.

[0030] 4. The present invention can batch process the front and rear cavity surfaces of multiple fixtures simultaneously. Compared with manually using a sticky rod to handle the cavity surface particles, the cleaning efficiency is greatly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0032] Figure 2 Schematic diagram of the structure of the static elimination ion air gun of the present invention;

[0033] Figure 3 Schematic diagram of the bracket of the present invention;

[0034] Figure 4 Schematic diagram of the housing of the present invention;

[0035] Figure 5 Schematic diagram of the purging cavity surface of the static elimination ion air gun of the present invention;

[0036] Figure 6 Schematic diagram of the cooperation between the bar clamp and the bracket of the present invention;

[0037] Figure 7 Particle contamination diagram of the bar cavity surface;

[0038] Figure 8 Diagram of the bar cavity surface after cleaning treatment of the present invention;

[0039] Figure 9 Front view structure schematic diagram of the present invention;

[0040] Figure 10 Top view structure schematic diagram of the present invention;

[0041] Wherein: 1. Static elimination ion air gun; 2. Universal joint corrugated pipe; 3. Bar clamp; 4. Exhaust fan; 5. Bracket; 6. Air pressure adjustment switch; 7. Controller; 8. Equipment switch; 9. Housing;

[0042] 1-1. Nitrogen pipe; 1-2 High-voltage ionizer;

[0043] 5-1. Platform; 5-2. Fixture positioning boss; 5-3. Slide rail;

[0044] 9-1. Step; 9-2. Mesh partition; 9-3. Top cover. Detailed implementation method

[0045] The present invention will be further described below by way of examples in conjunction with the accompanying drawings, but is not limited thereto.

[0046] Example 1:

[0047] As Figure 1-5As shown in the figure, this embodiment provides a device for improving the yield of the cavity surface of a semiconductor laser bar, including an electrostatic elimination ion air gun 1, a universal joint corrugated pipe 2, a bracket 5, a housing 9, and a controller 7. On one side inside the housing 9, there is a step 9-1, on which the electrostatic elimination ion air gun 1 is arranged. The electrostatic elimination ion air gun 1 is connected to the controller 7. At the air outlet of the electrostatic elimination ion air gun 1, there is a universal joint corrugated pipe 2. On the bottom surface of the housing 9 on one side of the step 9-1, there is a bracket 5, and on the bracket 5, there is a bar clamp 3. The bar clamp is an existing bar clamping device. The controller is connected to a device switch 8 and a pressure adjustment switch 6, and is used to control the opening and closing of the device and the pressure adjustment.

[0048] On the bottom surface of the housing on one side of the step 9-1 and on the side surface of the housing 9, there is a mesh partition 9-2. On one side of the housing 9, there is an exhaust fan 4. The particles are discharged into the housing through the mesh partition 9-2, and then the exhaust fan 4 discharges dust particles, impurity pollution, etc., to maintain a dust-free environment.

[0049] The bracket 5 is a cuboid frame. On the top platform 5-1 of the bracket 5, there are 6 rectangular through holes arranged in parallel. On the periphery of the rectangular through holes, there are fixture positioning bosses 5-2. The positions of the rectangular through holes correspond to the bars inside the bar clamp. The bracket can place 6 bar clamps at a time, improving the processing efficiency.

[0050] On the mesh partition on the bottom surface of the housing 9, there is a slide rail 5-3. The bottom of the bracket 5 is connected to the slide rail 5-3 through a chute, enabling the bracket to slide horizontally, which is convenient for the installation and use of the bar clamp.

[0051] The electrostatic elimination ion air gun 1 includes a high-voltage ionizer 1-2 and a nitrogen gas pipe 1-1. The high-voltage ionizer is externally connected to nitrogen through the nitrogen gas pipe. At the air outlet of the high-voltage ionizer, there are 2 universal joint corrugated pipes 2, and the 2 universal joint corrugated pipes 2 are arranged vertically.

[0052] The interior of the housing 9 is hollow, and at the top of the housing 9, there is a top cover 9-3, which is convenient for sealing.

[0053] The application of the above device for improving the yield of the cavity surface of a semiconductor laser bar is as follows:

[0054] (1) Install the bar in the bar clamp 3, move the bracket to one side of the housing, and then sequentially place the bar clamps 3 on the bracket;

[0055] (2) Move the bracket 5 to a position close to the step, adjust the universal joint corrugated pipe 2 so that the upper and lower sides of each bar clamp respectively correspond to 1 universal joint corrugated pipe 2, and the included angle between the universal joint corrugated pipe 2 and the cavity surface of the bar in the bar clamp 3 is less than 15°;

[0056] (3) The high-voltage ionizer 1-2 is started, and neutral charged ions are formed by applying high voltage electricity. Under the action of the air flow, the charged ions are ejected through the universal joint bamboo tube 2 to the bar. On the one hand, the static charges on the surface of the bar cavity are neutralized, solving the problems of charge accumulation caused by static electricity, adhesion and adsorption of the bar, and adsorption of dust holding, reducing the quality defects in product production. On the other hand, through the generated high-speed ion air flow, the large particle pollution and impurities on the cavity surface are removed, keeping the cavity surface clean;

[0057] (4) After the purging is completed, open the top cover 9-3, take out the bar fixture 3 after the cleaning process, place it in a dust-free box for storage, and wait for mounting and coating.

[0058] Using this embodiment for bar cleaning, Figure 6 is the pollution state of the bar cavity surface before cleaning, Figure 7 is the state of the bar cavity surface after cleaning. From the comparison, it can be seen that this embodiment can effectively remove the particle pollution on the cavity surface.

[0059] The above are only the embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A device for improving the yield of semiconductor laser stripe cavity surface, characterized in that: It includes a static-eliminating ion air gun, a universal bamboo tube, a bracket, a shell and a controller. A step is arranged on one side of the shell, the static-eliminating ion air gun is arranged on the step, the static-eliminating ion air gun is connected to the controller, a universal bamboo tube is arranged on the air outlet of the static-eliminating ion air gun, a bracket is arranged on the bottom surface of the shell on one side of the step, and a bar clamp is arranged on the bracket.

2. The device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 1, characterized in that: A mesh partition is arranged on the bottom surface of the shell body and the side surface of the shell body on one side of the step, and an exhaust fan is arranged on one side of the shell body.

3. The device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 2, characterized in that: The bracket is a rectangular parallelepiped frame, a plurality of rectangular through holes are arranged in parallel on the top platform of the bracket, and clamp positioning bosses are arranged around the rectangular through holes.

4. The device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 3, characterized in that: A slide rail is arranged on the mesh partition layer on the bottom surface of the shell, and the bottom of the bracket is connected with the slide rail through a slide groove.

5. The device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 4, characterized in that: The static electricity removing ionizing air gun comprises a high-voltage ionizer and a nitrogen pipe. The high-voltage ionizer is externally connected to nitrogen through the nitrogen pipe, and a universal bamboo tube is arranged at the air outlet of the high-voltage ionizer.

6. The device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 5, characterized in that: The air outlet of the high-voltage ionizer is provided with two universal bamboo tubes, and the two universal bamboo tubes are arranged vertically.

7. The device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 6, characterized in that: The interior of the shell is hollow, and a top cover is arranged on the top of the shell.

8. Application of the device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 7, characterized in that: Here are the steps: (1) Install the bar in the bar fixture, move the bracket to one side of the housing, and then place the bar fixture on the bracket in sequence; (2) Move the bracket to a position close to the step and adjust the universal bamboo tube so that the upper and lower sides of each bar clamp correspond to one universal bamboo tube respectively; (3) The high-voltage ionizer is started, and neutral charged ions are formed by applying high voltage. Under the action of airflow, the charged ions are ejected to the bar through the universal bamboo tube; (4) After the purge is completed, open the top cover, take out the cleaned bar fixture, store it in a dust-free box, and wait for the rack to be coated.

9. Application of the device for improving the yield of semiconductor laser stripe cavity surface as claimed in claim 8, characterized in that: In step (2), the angle between the universal bamboo tube and the cavity surface of the bar in the bar clamp is less than 15°.

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