Method for removing adhesive member, method for regenerating polishing pad using same, and polishing pad manufactured using method for regenerating polishing pad

By removing the adhesive members on the polishing pad and re-forming grooves of standard depths, the problem of the polishing pad being unable to regenerate after wear is solved, and the regeneration and reuse of the polishing pad is realized, and the production cost is reduced.

CN120055984APending Publication Date: 2025-05-30GTI KOREA CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202411015730.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-11-29
Filing Date
2024-07-26
Publication Date
2025-05-30

AI Technical Summary

Technical Problem

In the prior art, the polishing pad is damaged due to wear in the CMP process and cannot be regenerated, resulting in a reduced polishing efficiency and an increase in production costs.

Method used

By chemically removing the adhesive members on the polishing pad using an organic solvent, damage caused by physical removal is avoided and pad thickness is reconstituted by additional auxiliary pad members, and standard depth grooves capable of CMP are reconstituted.

Benefits of technology

The regeneration and reuse of polishing pads is achieved, which extends the service life of polishing pads, reduces production costs, and improves polishing efficiency.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN120055984A_ABST
    Figure CN120055984A_ABST
Patent Text Reader

Abstract

The method for removing an adhesive member attached to a pad member and composed of an adhesive and a film member according to the present application may comprise the steps of: removing the adhesive of the adhesive member; and removing the film member from the pad member. The adhesive member may comprise a double-sided tape, and the double-sided tape is formed by applying the adhesive to both surfaces of the film member. The process of removing the adhesive of the adhesive member may include immersing the pad member in an organic solvent to place the film member in a state in which the film member can be easily removed from the pad member.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present application relates to a method for regenerating a worn polishing pad, and more particularly, to a method for chemically removing an adhesive member from a pad member of a polishing pad, a method for regenerating a polishing pad using the same, and a polishing pad manufactured using the method for regenerating a polishing pad. Background Art

[0002] Generally, semiconductor devices can be manufactured through processes such as exposure, etching, diffusion, and deposition. At this time, when the deposition process and the etching process are repeatedly performed on a wafer, a topological structure appears on the wafer surface, and this surface topological structure (non-uniformity of film thickness) can cause process defects during the photolithography process, making it difficult to perform subsequent processes. Therefore, there is a problem of reduced production yield of the device.

[0003] As the number of layers stacked on the wafer increases, the topological structure on the wafer surface gradually deepens, making the above problems more serious. Therefore, in order to prevent process defects and facilitate subsequent processes, it is necessary to perform a planarization process on the wafer surface having a topological structure to planarize the wafer surface.

[0004] One of the planarization processes for planarizing the wafer surface is the Chemical Mechanical Polishing (CMP) process. The above CMP process is a process for planarizing the wafer surface chemically and mechanically using a polishing pad and a slurry. In a state where the surface of the polishing pad attached to the platen is in contact with the surface of the wafer to be polished, while chemically polishing the wafer surface by supplying the slurry, mechanical polishing is performed through the polishing pad, thereby enabling the wafer surface to be planarized.

[0005] Generally, the polishing pad is formed with grooves of various shapes on the surface (e.g., the polishing surface) in contact with the surface of the wafer to be polished, so as to easily remove reaction products generated between the film chemically etched by the slurry during the CMP process. As the CMP process progresses, not only the slurry supplied to the polishing pad adheres in the above grooves, but also polishing residues such as reaction products accumulate. These polishing residues can cause scratches on the surface of the semiconductor wafer to be polished during the CMP process, resulting in defects and thus reducing the production yield.

[0006] In addition, as the CMP process is repeated, the polishing pad is worn, the pad thickness gradually decreases, and the groove depth of the polishing pad also gradually decreases. When the depth of the above grooves is less than a set standard depth, the grooves are partially damaged, resulting in a problem of reduced polishing efficiency of the polishing pad. Due to these problems, the damaged polishing pad is discarded.

[0007] Currently, in the CMP process, the usage of polishing pads is increasing continuously, while the worn polishing pads are discarded without reuse. Therefore, a regeneration technology for worn polishing pads is needed. In order to regenerate worn polishing pads, the bonding member must first be removed from the pad member of the worn polishing pad.

[0008] In the past, the bonding member was physically removed from the above-mentioned pad member. For example, when a jig was used to remove the bonding member, surface roughness occurred on the bonding member, resulting in deterioration of surface uniformity. Due to the surface roughness of the bonding member, there was a problem that it was difficult to regenerate the worn polishing pad. In addition, when the bonding member was physically removed, the pad member was damaged, so the worn polishing pad had to be discarded. Summary of the Invention

[0009] Technical Problem

[0010] This application was developed to solve the above problems, and its purpose is to provide a method for easily removing the bonding member without damaging the pad member, a polishing pad regeneration method using this method, and a polishing pad manufactured using this polishing pad regeneration method.

[0011] In addition, another purpose of this application is to provide a method for removing the bonding member, a polishing pad regeneration method using this method, and a polishing pad manufactured using this polishing pad regeneration method, which can chemically remove the bonding member from the pad member by using an organic solvent, thereby preventing damage to the polishing pad and increasing the reuse rate of the polishing pad.

[0012] In addition, another purpose of this application is to provide a method for removing the bonding member, which can easily remove the above-mentioned bonding member from the pad member without causing damage by using an organic solvent when the depth of the groove becomes lower than the standard depth capable of performing the CMP process due to continuous CMP processes, so as to be able to re-groove the pad member.

[0013] In addition, another purpose of this application is to provide a polishing pad regeneration method and a polishing pad manufactured using the same, which re-groove the pad member from which the bonding member has been removed by using a method of removing the bonding member with an organic solvent to re-form a groove having a depth capable of polishing on the above-mentioned pad member, thereby extending the service life of the polishing pad.

[0014] In addition, another object of the present application is to provide a polishing pad regeneration method and a polishing pad manufactured using the same, which can extend the reuse rate and service life of the polishing pad. When the worn polishing pad due to the continuous CMP process has a thickness that cannot reform a groove with a depth greater than or equal to the standard depth capable of performing the CMP process, the auxiliary pad member is attached to the pad member from which the adhesive member is removed by impregnation with an organic solvent to supplement the pad thickness, and then a groove with a standard depth capable of performing CMP is formed to regenerate the polishing pad.

[0015] Solution to the problem

[0016] To solve the above problems, the present application provides a method for removing an adhesive member, which includes the following steps: providing a pad member, the pad member being composed of a main pad member and a buffer pad member attached to one side of the main pad member, and an adhesive member composed of an adhesive and a film member is attached to at least one of between one side of the buffer pad member and the main pad member and the other side of the buffer pad member; and chemically removing the adhesive member from the pad member.

[0017] The adhesive member may include a double-sided tape, which is formed by coating the adhesive on both sides of the film member. The adhesive may include a polyacrylic adhesive or an epoxy material, and the film member may include a polyethylene film.

[0018] The step of removing the adhesive member may include immersing the pad member in an organic solvent at room temperature for 1 minute to 5 minutes. The organic solvent may be composed of two polar organic solvents, one non-polar organic solvent, and a non-ionic surfactant. The contents of the two polar organic solvents may be 10% by weight to 30% by weight and 50% by weight to 80% by weight respectively, the content of the non-polar organic solvent may be 1% by weight to 20% by weight, and the content of the non-ionic surfactant may be 0.1% by weight to 1% by weight.

[0019] The step of removing the adhesive member may include immersing the pad member in the organic solvent such that the adhesive of the adhesive member is substantially completely removed and the film member of the adhesive member is separated from the main pad member or the buffer pad member.

[0020] The step of removing the adhesive member may include the following steps: immersing the pad member in the organic solvent to partially remove the adhesive of the film member such that the film member is in a state where it can be easily removed from the main pad member or the buffer pad member; and physically separating the film member from the main pad member or the buffer pad member.

[0021] The step of physically separating the above-mentioned film member may include physically separating the above-mentioned film member from the above-mentioned main pad member or the above-mentioned buffer pad member using a jig or physically separating the above-mentioned film member from the above-mentioned main pad member or the above-mentioned buffer pad member by a cutting method using a cutting device.

[0022] The step of removing the above-mentioned adhesive member may include the following steps: immersing the above-mentioned pad member in the above-mentioned organic solvent so that the adhesive of the above-mentioned adhesive member is removed only from the edge portion of the above-mentioned pad member; and physically separating the above-mentioned film member from the above-mentioned main pad member or the above-mentioned buffer pad member using a jig.

[0023] After removing the above-mentioned adhesive member by immersing the above-mentioned pad member in an organic solvent, the above-mentioned method for removing an adhesive member may further include a step of further immersing the above-mentioned pad member in an organic solvent to remove the adhesive remaining on the surface of the above-mentioned main pad member or the above-mentioned buffer pad member from which the above-mentioned adhesive member has been removed.

[0024] After removing the above-mentioned adhesive member from the above-mentioned pad member, the above-mentioned method for removing an adhesive member may further include a step of cleaning the above-mentioned pad member from which the above-mentioned adhesive member has been removed. The above-mentioned cleaning step may be performed by using at least one of a physical cleaning method, a dry cleaning method, and a wet cleaning method.

[0025] In addition, a method for regenerating a polishing pad according to the present application is a method for regenerating a worn polishing pad including a pad member, a buffer pad member, and an adhesive member. A plurality of grooves having a depth less than a standard depth capable of performing a polishing process are formed on one surface of the above-mentioned main pad member. The above-mentioned buffer pad member is attached to the other surface of the above-mentioned main pad member. The above-mentioned adhesive member is attached to the above-mentioned buffer pad member and is composed of an adhesive and a film member. The above-mentioned method for regenerating a polishing pad may include the following steps: chemically removing the above-mentioned adhesive member from the above-mentioned buffer pad member; removing a damaged portion on the upper surface of the above-mentioned main pad member; determining whether the thickness of the above-mentioned main pad member is a thickness capable of reforming grooves having a depth greater than or equal to the standard depth; reforming grooves on the upper surface of the above-mentioned main pad member according to the determination result; and attaching a new adhesive member to the lower surface of the above-mentioned main pad member on which the above-mentioned grooves are formed.

[0026] The above-mentioned adhesive includes a polyacrylic acid-based adhesive or an epoxy-based material. The above-mentioned film member may include a polyethylene-based film. The above-mentioned adhesive member may include a double-sided tape, and the double-sided tape is formed by coating the above-mentioned adhesive on both surfaces of the above-mentioned film member.

[0027] The step of removing the above-mentioned bonding member may include immersing the above-mentioned polishing pad in an organic solvent at room temperature for 1 minute to 5 minutes. The above-mentioned organic solvent may be composed of two polar organic solvents, one non-polar organic solvent, and a non-ionic surfactant. The contents of the above-mentioned two polar organic solvents may be 10% by weight to 30% by weight and 50% by weight to 80% by weight respectively, the content of the non-polar organic solvent is 1% by weight to 20% by weight, and the content of the non-ionic surfactant is 0.1% by weight to 1% by weight.

[0028] The step of removing the above-mentioned bonding member may include immersing the above-mentioned polishing pad in the above-mentioned organic solvent so that the adhesive of the above-mentioned bonding member is substantially completely removed and the film member of the above-mentioned bonding member is separated from the above-mentioned buffer pad member.

[0029] The step of removing the above-mentioned bonding member may include the following steps: immersing the above-mentioned polishing pad in the above-mentioned organic solvent so that the adhesive of the above-mentioned film member is partially removed, so that the above-mentioned film member is in a state where it can be easily removed from the above-mentioned buffer pad member, or only removing the adhesive of the above-mentioned bonding member from the edge portion of the above-mentioned buffer pad member; and physically separating the above-mentioned film member from the above-mentioned buffer pad member using a jig or a cutting device.

[0030] After the step of removing the above-mentioned bonding member by immersing the polishing pad in the above-mentioned organic solvent to remove the above-mentioned bonding member from the above-mentioned buffer pad member, the step may further include immersing the above-mentioned polishing pad in the organic solvent again to remove the adhesive remaining on the surface of the above-mentioned buffer pad member from which the above-mentioned bonding member has been removed.

[0031] The step of removing the damaged portion of the above-mentioned main pad member may include removing the damaged portion of the above-mentioned main pad member in a manner that retains a part of the above-mentioned groove, or removing the damaged portion of the above-mentioned main pad member in a manner that completely removes the above-mentioned groove.

[0032] In the above-mentioned determination step, if the thickness of the above-mentioned main pad member is a thickness that can re-form a groove with a depth greater than or equal to the above-mentioned standard depth, the step of re-forming the groove may include performing a re-grooving operation on the upper surface of the above-mentioned main pad member from which the damaged portion has been removed to form a groove with a depth greater than or equal to the standard depth in the above-mentioned main pad member.

[0033] In the above judgment step, if the thickness of the above cushion member is not the thickness capable of reforming a groove with a depth greater than or equal to the above standard depth, the above step of reforming the groove may include the following steps: separating the buffer cushion member from the above main cushion member; attaching an auxiliary cushion member to the above main cushion member from which the buffer cushion member has been removed to supplement the thickness of the above main cushion member; forming a groove with a depth greater than or equal to the standard depth by performing a re-grooving operation on the upper surface of the main cushion member from which the damaged part has been removed; and attaching a new buffer cushion member to the lower surface of the above auxiliary cushion member.

[0034] The above main cushion member may be made of a polyurethane-based material, and the above auxiliary cushion member may be made of a polyurethane-based material having a recovery coefficient characteristic the same as or similar to that of the above cushion member.

[0035] The polishing pad regeneration method may further include steps of performing a cleaning process before and after removing the above adhesive member to remove foreign substances accumulated on the upper surface of the main cushion member of the above worn polishing pad and in the above groove, and the above cleaning process may be performed by using at least one of a physical cleaning method, a dry cleaning method, and a wet cleaning method.

[0036] In addition, in a polishing pad regeneration method of the present application, the above polishing pad is a worn polishing pad including a main cushion member, a buffer cushion member, and an adhesive member. The above main cushion member is formed with a plurality of grooves having a depth less than the standard depth capable of performing a polishing process and having a thickness smaller than the thickness capable of reforming a groove with a depth greater than or equal to the standard depth. The above buffer cushion member is attached to the above main cushion member, and the above adhesive member is attached to the above buffer cushion member. The polishing pad regeneration method may include the following steps: separating the buffer cushion member from the above main cushion member; removing the above adhesive member from the separated buffer cushion member; removing the damaged part of the upper side portion of the above main cushion member; attaching an auxiliary cushion member to the lower surface of the above main cushion member to form a regenerated cushion member composed of the remaining main cushion member and the above auxiliary cushion member; performing a re-grooving operation on the above regenerated cushion member to reform a groove with a depth greater than or equal to the standard depth; attaching a buffer cushion member to the lower surface of the auxiliary cushion member of the above cushion member on which the above groove has been reformed; and attaching a new adhesive member to the lower surface of the above cushion member formed with the above groove to regenerate the polishing pad.

[0037] The step of removing the above adhesive member includes immersing the above polishing pad in an organic solvent at room temperature for 1 minute to 5 minutes.

[0038] In the step of removing the above adhesive member, the above polishing pad is immersed in the above organic solvent so that the adhesive of the above adhesive member is actually completely removed and the film member of the above adhesive member is separated from the buffer cushion member.

[0039] The step of removing the above-mentioned adhesive member may include the following steps: immersing the above-mentioned polishing pad in the above-mentioned organic solvent so that the adhesive of the above-mentioned film member is partially removed, so that the above-mentioned film member is in a state where it can be easily removed from the above-mentioned buffer pad member, or only removing the adhesive of the above-mentioned adhesive member from the edge portion of the above-mentioned buffer pad member; and physically separating the above-mentioned film member from the above-mentioned buffer pad member using a jig or a cutting device.

[0040] After the step of removing the above-mentioned adhesive member by immersing the polishing pad in the above-mentioned organic solvent to remove the above-mentioned adhesive member from the above-mentioned buffer pad member, the step may further include immersing the above-mentioned polishing pad further in the organic solvent to remove the adhesive remaining on the surface of the above-mentioned buffer pad member from which the above-mentioned adhesive member has been removed.

[0041] The step of removing the damaged portion of the above-mentioned main pad member may include removing the damaged portion of the above-mentioned main pad member in a manner that retains a part of the above-mentioned groove, or removing the damaged portion of the above-mentioned main pad member in a manner that completely removes the above-mentioned groove.

[0042] In the above-mentioned determination step, if the thickness of the above-mentioned main pad member is a thickness capable of reforming a groove having a depth greater than or equal to the above-mentioned standard depth, the step of reforming the groove may include performing a re-grooving operation on the upper surface of the above-mentioned main pad member from which the above-mentioned damaged portion has been removed to form a groove having a depth greater than or equal to the standard depth in the above-mentioned main pad member.

[0043] In the above-mentioned determination step, if the thickness of the above-mentioned pad member is not a thickness capable of reforming a groove having a depth greater than or equal to the above-mentioned standard depth, the step of reforming the groove may include the following steps: separating the above-mentioned buffer pad member from the above-mentioned main pad member; attaching an auxiliary pad member to the above-mentioned main pad member from which the above-mentioned buffer pad member has been removed to supplement the thickness of the above-mentioned main pad member; forming a groove having a depth greater than or equal to the standard depth by performing a re-grooving operation on the upper surface of the main pad member from which the above-mentioned damaged portion has been removed; and attaching the buffer pad member to the lower surface of the above-mentioned auxiliary pad member.

[0044] The step of attaching the above-mentioned buffer pad member to the above-mentioned auxiliary pad member may include attaching the buffer pad member to the above-mentioned auxiliary pad member by repeatedly using the buffer pad member separated from the above-mentioned main pad member and from which the adhesive member has been removed, or attaching a new buffer pad member to the above-mentioned auxiliary pad member.

[0045] In addition, the present application provides a polishing pad regenerated by the above-mentioned method for removing an adhesive member and a method for regenerating a polishing pad using the same.

[0046] Effects of the Invention

[0047] As described above, according to the present embodiment, the bonding member composed of a double-sided adhesive can be easily removed chemically from the pad member, so that damage to the polishing pad caused by the removal of the bonding member can be prevented. Therefore, the reuse rate of the worn polishing pad can be increased.

[0048] In addition, if the depth of the groove becomes lower than the standard depth at which the CMP process can be performed due to the continuous progress of the CMP process, after removing a part of the upper surface of the main pad member or the entire damaged groove, the bonding member is removed from the pad member using an organic solvent, and then a part of the upper surface of the above pad member or the entire damaged groove is removed, and the pad member is regrooved so that a groove with a standard depth can be formed in the above pad member. Therefore, an expensive polishing pad can be regenerated and used instead of being discarded, so the service life of the polishing pad can be extended.

[0049] On the other hand, when the thickness of the pad member becomes too thin to form a groove with a standard depth, the bonding member is removed from the pad member using an organic solvent, and then the thickness capable of forming a groove is ensured by attaching an auxiliary pad member to the pad member, and the pad member is regrooved so that a groove with a standard depth can be formed in the above pad member. Therefore, an expensive polishing pad can be reused, thereby extending the service life of the polishing pad. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 is a schematic perspective view of a CMP apparatus as a semiconductor manufacturing apparatus according to an embodiment of the present application.

[0051] Figure 2a and Figure 2b shows a cross-sectional structure of a polishing pad used in a CMP process according to an embodiment of the present application before and after use.

[0052] Figures 3a to 3j is a cross-sectional view showing an example of a regeneration method of a polishing pad used in a CMP process according to an embodiment of the present application.

[0053] Figures 4a to 4i is a cross-sectional view showing another example of a regeneration method of a polishing pad used in a CMP process according to an embodiment of the present application.

[0054] Figures 5a to 5c is a view showing the states before and after removing the bonding member according to an embodiment of the present application.

[0055] Figure 6 is a flowchart for explaining a regeneration method of a polishing pad used in a CMP process according to an embodiment of the present application.

[0056] Figures 7a to 7hA cross-sectional view showing an example of a method for regenerating a polishing pad used in a CMP process according to another embodiment of the present application.

[0057] Figures 8a to 8f A cross-sectional view showing another example of a method for regenerating a polishing pad used in a CMP process according to another embodiment of the present application.

[0058] Figure 9 A flowchart for explaining a method for regenerating a polishing pad used in a CMP process according to another embodiment of the present application.

[0059] Reference numerals:

[0060] 201, 201a - 201c, 201e - 201g, 201i - 201j, 201m - 201n: polishing pad

[0061] 211: main pad member

[0062] 211c, 211g, 211j, 211n: pad members

[0063] 213, 213a - 213c, 213e - 213g, 213i - 213j, 213m - 213n: grooves

[0064] 215, 215c, 215n: buffer pad members

[0065] 217, 217b, 217c, 217f, 217g: bonding members

[0066] 219, 219c, 219j: auxiliary pad members Detailed Description of the Invention

[0067] The present application can be variously modified and can have various embodiments, and the embodiments will be described in detail below. However, it should be understood that the present application is not limited to a specific disclosed form, and includes all changes, equivalents, or substitutes belonging to the spirit and technical scope of the present application.

[0068] The terms used in this specification are used to describe specific embodiments, but are not intended to limit the scope of the present application. As long as it is not clearly distinguished and described in the text, the description indicating the singular should be understood to include the plural. In the present application, terms such as "comprising" or "consisting of" are intended to specify the presence of the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and should not be construed as excluding the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0069] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. Terms that are the same as those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the context of the relevant art, and if not explicitly defined in this specification, they shall not be interpreted as having an abnormal or overly formal meaning.

[0070] Terms such as "first", "second", etc. may be used to describe various structural elements, but the above terms do not limit the above structural elements. The above terms are used to distinguish one structural element from another. For example, without departing from the scope of this application, the first component may be named the second component, and similarly, the second component may be named the first component.

[0071] Terms such as upper end, lower end, upper surface, lower surface, or upper and lower parts are used to distinguish the relative positions of structural elements. For example, for the sake of convenience of description, when the upper side of the figure is named the upper part and the lower side of the figure is named the lower part, in fact, without departing from the scope of the claims of this application, the upper part may be named the lower part, and the lower part may be named the upper part.

[0072] The terms used in this application are only used to describe specific embodiments and are not intended to limit this application. As long as it is not clearly distinguished in the text, a description indicating the singular should be understood to include the plural. In this application, terms such as "comprising" or "having" are used to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and it should be understood that one or more other features, numbers, steps, operations, components, parts, or combinations thereof are not precluded in advance or added.

[0073] Hereinafter, a method for regenerating a polishing pad according to an embodiment of the present application and a method for manufacturing a polishing pad using the same will be described in detail with reference to the accompanying drawings.

[0074] Figure 1 A diagram schematically showing an example of a CMP apparatus according to an embodiment of the present application.

[0075] Refer to Figure 1 , a CMP apparatus 100 according to an embodiment of the present application includes a polishing pad 20 disposed on a rotating platen 10 that is a disk-shaped rotating table. The rotating platen 10 is mounted on a central shaft 15 and can rotate about the central shaft 15. The polishing pad 20 can be attached to the rotating platen 10 through an adhesive member 30. For example, a pad member of the polishing pad 20 to be described later can be attached to the rotating platen 10 through the adhesive member 30.

[0076] In addition, the above CMP apparatus 100 may be provided with a wafer head 40 to which the wafer W is attached such that the surface to be polished of the wafer W as the object to be polished faces the polishing surface of the polishing pad 20. The CMP apparatus 100 may further include a slurry supply device 50 for supplying slurry 55 to the polishing surface of the polishing pad 20.

[0077] In the CMP process using the above CMP apparatus 100, in a state where the surface to be polished of the wafer W attached to the wafer head 40 is in contact with the polishing surface of the polishing pad 20 attached to the rotating platen 10, slurry is injected onto the polishing surface of the polishing pad 20 by the slurry supply device 50, and then the wafer head 40 and the rotating platen 10 are rotated to simultaneously perform chemical reaction and physical polishing, so as to planarize the wafer surface.

[0078] Figure 2a And Figure 2b FIG. is a view showing a polishing pad according to an embodiment of the present application, Figure 2a FIG. is a cross-sectional view showing a polishing pad before the CMP process, i.e., before wear, according to an embodiment of the present application, Figure 2b FIG. is a cross-sectional view showing a polishing pad after the CMP process, i.e., after wear, according to an embodiment of the present application.

[0079] Referring to Figure 2a and Figure 2b , a polishing pad according to an embodiment of the present application will be described as follows.

[0080] Referring to Figure 2a , a polishing pad 201 according to an embodiment may include a main pad member 211 and a cushion pad member 215. The main pad member 211 may be a pad for polishing the wafer W by contacting the surface to be polished of the wafer W during the CMP process. The cushion pad member 215 may be attached to the upper surface of the rotating platen ( Figure 1 10 in) to cushion the pad between the main pad member 211 and the rotating platen 10.

[0081] A plurality of grooves 213 may be formed on the polishing surface of the main pad member 211 opposite to the surface to be polished of the wafer W. As Figure 2a shown, before the CMP process, the main pad member 211 may have a thickness T 0 , and each groove 213 may have a depth D 0 . The depth D 0 may be greater than or equal to a standard depth. The standard depth may represent the minimum depth at which each of the grooves 213 can perform the CMP process.

[0082] The above polishing pad 201 may further include an adhesive member 217. The above adhesive member 217 may be composed of an adhesive and a film member. For example, the above adhesive may include acrylic adhesives, epoxy materials, etc., and the above film member may include polyethylene films, etc. The above adhesive member 217 may include a double-sided tape, which is formed by coating the above adhesive material on both surfaces of the above polyethylene film.

[0083] The above polishing pad 201 can be attached to the upper surface of the rotating platen ( Figure 1 10 in). That is, the above buffer pad member 215 can be attached to the upper surface of the above rotating platen 10 through the above adhesive member 217. One side of the above adhesive member 217 is attached to the above buffer pad member 215, and the other side is attached to the surface of the above rotating platen 10 to attach the above polishing pad 201 to the above rotating platen 10.

[0084] In the CMP process, with the buffer pad member 215 attached to the rotating platen 10, the main pad member 211 contacts the surface of the wafer W to be polished, so that it can be Figure 1 chemically and mechanically planarized together with the slurry 55 supplied from the slurry supply unit 50 of.

[0085] When the depth D of the above groove 213 is greater than or equal to the standard depth 0 and the main pad member 211 has a thickness T 0 of the polishing pad 201 is repeatedly subjected to the CMP process for a long time, the above polishing pad 201 may gradually wear. Therefore, the depth D of the above groove 213 0 gradually decreases, and the thickness T of the main pad member 211 of the above polishing pad 201 0 also gradually decreases. As described above, when the CMP process is repeated, the above polishing pad 201 may be worn or damaged.

[0086] As Figure 2b shown, in the polishing pad 201a worn due to repeated CMP processes, the depth of each groove 213a of the main pad member 211 gradually decreases, so it may have a depth D less than the minimum depth (standard depth) capable of performing the CMP process 1 , and the above depth may be less than the depth D of the main pad member 211 of the above polishing pad 201 before the CMP process 0 . Therefore, the main pad member 211 of the above polishing pad 201 may have a thickness T less than the thickness T of the main pad member 211 of the above polishing pad 201 before the CMP process 0 1 . ​

[0087] Therefore, when the depth D of the groove 213a l becomes less than the minimum depth at which the CMP process can be performed, i.e., the standard depth, the thickness of the main pad member 211 decreases, and the shape of the groove 213a may also be partially damaged. The polishing efficiency and polishing performance of the worn polishing pad 201a deteriorate, so it is difficult to perform a normal polishing process, resulting in it possibly being discarded.

[0088] However, an embodiment of the present application can provide a method for regenerating and reusing a polishing pad having a groove with a depth less than the standard depth without discarding it. In one embodiment, the method for regenerating the polishing pad may mainly include: a first-step process of removing the bonding member for attaching the polishing pad to the rotating platen 10 from the main pad member; and a second-step process of removing the damaged portion of the polishing pad from which the bonding member has been removed, and then reforming a groove above the standard depth in the main pad member, thereby manufacturing a reusable polishing pad.

[0089] Figures 3a to 3j FIG. is a cross-sectional view for illustrating an example of a method for regenerating a worn polishing pad according to an embodiment of the present application. Figure 6 FIG. is a flowchart for illustrating a method for regenerating a polishing pad according to an embodiment of the present application.

[0090] Hereinafter, reference will be made to Figures 3a to 3j and Figure 6 to describe in detail a method for regenerating a polishing pad according to an embodiment of the present application.

[0091] First, a cleaning process (S600) can be performed on the polishing pad, such as the worn polishing pad 201a. Various foreign substances such as reaction products and process residues generated during the repeated CMP process accumulate on the upper surface of the main pad member 211 and the groove 213a. Therefore, the above cleaning process can be performed to remove the foreign substances accumulated on the polishing pad 201a.

[0092] In an embodiment of the present application, the polishing pad 201a can be cleaned by physical cleaning, dry cleaning, wet cleaning, chemical cleaning, etc. The physical cleaning can include brush scrubbing cleaning, etc. The dry cleaning can include air blowing cleaning, tornado cleaning, plasma cleaning, etc. The wet cleaning can include water jet cleaning, stream jet cleaning, bubble jet cleaning, ultrasonic cleaning, or mega sonic cleaning, etc. The chemical cleaning can include diluted HF (DHF) cleaning, Buffered Oxide Etch (BOE) cleaning, Sulfuric Acid Peroxide Mixture (SPM) cleaning, Ammonium Peroxide Mixture (APM) cleaning, and Hydrochloric Peroxide Mixture (HPM) cleaning, etc. In addition to the above cleaning processes, various cleaning methods can also be used to perform the cleaning process of the polishing pad 201.

[0093] Referring to Figure 3a , after the cleaning process of the polishing pad 201a, in the above polishing pad ( Figure 2b 201a therein), the bonding member 217 can be separated from the buffer pad member 215 (S610).

[0094] In an embodiment of the present application, an organic solvent can be used to chemically remove the bonding member 217 from the buffer pad member 215. The method of chemically removing the bonding member 217 can include dipping the polishing pad 201a into an organic solvent and removing the polyethylene film of the bonding member 217 from the buffer pad member 215.

[0095] For example, the bonding member 217 can be removed by dipping it into an organic solvent at room temperature for 1 minute to 5 minutes.

[0096] The method of chemically removing the bonding member 217 can include dipping the main pad member into the organic solvent such that the adhesive of the bonding member is actually completely removed and the film member of the bonding member is separated from the buffer pad member.

[0097] In the above method for chemically removing the adhesive member 217, after removing the adhesive member 217 from the buffer pad member 215, the main pad member 211 can be secondarily immersed in an organic solvent to further remove the adhesive that may remain on the surface of the buffer pad member 215.

[0098] The method for chemically removing the adhesive member 217 may further include removing the adhesive member 217 from the buffer pad member 215, and then cleaning the main pad member 211 of the polishing pad from which the adhesive member 217 has been removed, such as the buffer pad member 215. The cleaning process in S520 can be performed in the same manner as the cleaning process in S510.

[0099] For example, the organic solvent may be composed of two polar organic solvents, one non-polar organic solvent, and a non-ionic surfactant. The contents of the two polar organic solvents may be 10% to 30% by weight and 50% to 80% by weight, respectively, the content of the non-polar organic solvent is 1% to 20% by weight, and the content of the non-ionic surfactant is 0.1% to 1% by weight. Additionally, the polar organic solvents may include dimethyl sulfoxide, acetonitrile, tetrahydrofuran, methanol, ethanol, isopropanol, ethyl acetate, acetone, dimethyl carbonate, dimethylformamide, dimethylacetamide, etc. The non-polar organic solvents may include 1,4-dioxane, hexane, toluene, diethyl ether, petroleum ether, cyclohexane, chloroform, hydroflurocabone, etc. ane (1,4-dioxane), hexane, toluene, diethyl ether, petroleum ether, cyclohexane, chloroform, hydroflurocabone, etc.

[0100] By immersing the polishing pad in the organic solvent under the above conditions to remove the adhesive component of the adhesive member 217, the adhesive member 217 can be easily removed from the buffer pad member 215. Therefore, the polyethylene film of the adhesive member 217 can be easily and simply removed from the buffer pad member 215 without damaging the polishing pad 201a, specifically, the main pad member 211.

[0101] Referring to FIG. 5, it can be seen that the adhesive component of the bonding member has been successfully removed by the above cleaning process. Specifically, as Figure 5a shown, when the polishing pad is immersed in an organic solvent at room temperature for 1 minute to 5 minutes, as Figure 5b shown, the adhesive component of the bonding member is removed, such that the film component is in a state where it can be easily removed. Figure 5c The pad member of the bonding member is shown to be removed without damage.

[0102] In an embodiment of the present application, an example of removing the bonding member is shown as follows: by fully immersing the above bonding member 217 in an organic solvent, such that the adhesive of the above bonding member 217 is actually completely removed. However, in another embodiment, the above polishing pad 201a can be immersed in the above organic solvent for a period of time to form a state where the polyethylene-like film of the above bonding member 217 can be easily removed from the above buffer pad member 215, and then the above bonding member 217 is physically removed from the above buffer pad member 215.

[0103] As an example, the above main pad member 211 can be immersed in an organic solvent to partially remove the above adhesive, and then the above bonding member 217 is physically separated from the above buffer pad member 215 using a jig or the above bonding member 217 is physically separated from the above buffer pad member 215 by a cutting method using a skiving device.

[0104] As another example, the above main pad member 211 can be immersed in an organic solvent such that only the adhesive is removed from the edge portion of the above buffer pad member 215, and then the above bonding member 217 can be physically separated from the above buffer pad member 215 using a jig.

[0105] As described above, the adhesive is removed by the above organic solvent impregnation to form a state where the ethylene-like film can be easily removed, and then the above bonding member 217 can be physically removed from the above buffer pad member. Therefore, the above bonding member can be easily separated from the pad member without damaging the pad member.

[0106] In an embodiment of the present application, an example is shown in which a cleaning process (S600) is performed to remove foreign matter accumulated on the upper surface and grooves of the polishing pad, and then a process (S610) of removing the bonding member 217 is performed, but the present application is not limited thereto. In another embodiment, the above process (S610) of removing the above bonding member 217 can be performed, and then the above cleaning process (S600) can be performed.

[0107] In one example, in the S610 process, the above-mentioned bonding member 217 is removed, and a process of cleaning the surface of the cushion member 215 from which the bonding member 217 has been removed (the surface opposite to the surface of the main cushion member 211 where the groove is formed) is performed. At the same time, in the S600 process, a cleaning process for removing foreign matters accumulated on the upper surface of the main cushion member 211 and in the groove 213 can be sequentially performed.

[0108] In another example, in the S610 process, the above-mentioned bonding member 217 is removed, and a process of cleaning the surface of the cushion member 215 from which the bonding member 217 has been removed (the surface opposite to the surface of the main cushion member 211 where the groove is formed) is performed. At the same time, in S600, a cleaning process for removing foreign matters accumulated on the upper surface of the above-mentioned main cushion member 211 and in the groove can be performed.

[0109] The shape of the above-mentioned groove 213a is damaged due to repeated CMP processes. Therefore, the upper side portion of the above-mentioned main cushion member 211, that is, the damaged portion, can be removed by a planarization process (S620). In one embodiment, the upper side portion of the above-mentioned main cushion member 211 can be partially removed. Therefore, the above-mentioned groove 213a of the above-mentioned main cushion member 211 can have a depth D 1 less than the depth D 1 ', and the above-mentioned main cushion member 211 can have a thickness T 1 less than the thickness T 1 '.

[0110] Next, in order to determine whether the thickness of the above-mentioned main cushion member 211 is a thickness capable of forming a groove with a depth greater than or equal to the standard depth, that is, to determine whether a groove with a depth greater than or equal to the standard depth can be formed on the upper surface of the above-mentioned main cushion member 211, the thickness of the above-mentioned main cushion member 211 can be measured (S630). The thickness of the above-mentioned main cushion member 211 can be measured using a surface detector of a laser 3D displacement measuring device, but the present application is not limited thereto.

[0111] It can be determined whether the above-mentioned thickness of the main cushion member 211 measured in step S630 is a thickness capable of forming a groove that can be polished, that is, whether it is a thickness capable of forming a groove with a depth greater than or equal to the above-mentioned standard depth (S640).

[0112] As a judgment result in step S640, as Figure 3b shown, if the thickness T 1 ' of the above-mentioned main cushion member 211 from which the upper surface has been partially removed is a thickness capable of forming a groove with a depth greater than or equal to the standard depth (S640: Yes), a re-grooving process is performed to be able to form a groove with a depth greater than or equal to the standard depth on the above-mentioned main cushion member 211.

[0113] Specifically, as Figure 3b shown, in the damaged portion removal process (S610), the upper side portion of the main pad member 211 of the polishing pad is partially removed, so that the groove 213a' of the main pad member 211 can have a depth D 1 less than the depth D 1 ', and the main pad member 211 can have a thickness T 1 less than the thickness T 1 '.

[0114] Subsequently, since the thickness of the main pad member 211 of the polishing pad with the damaged portion of the groove partially removed in step S620 is the thickness capable of forming a groove with a depth greater than or equal to the standard depth, therefore, as Figure 3c shown, a re-grooving operation can be performed on the main pad member 211 to form a groove 213b (S675) in the main pad member 211. Therefore, the main pad member 211 has the thickness (T 2 = T 1 '), and a groove 213b with a depth D greater than or equal to the standard depth can be formed. 2

[0115] After a groove 213b with the depth D 2 is formed in the main pad member 211, a cleaning process for the main pad member 211 can be performed. The cleaning process performed after forming the groove 213b is carried out in the same manner as at least one of the cleaning process in step S600, the cleaning process for removing the residue of the bonding member in step S610, and the cleaning process for removing foreign matters in the groove in step S620. After performing the above re-grooving operation, the above cleaning process can be carried out sequentially or simultaneously at one time.

[0116] Next, as Figure 3d shown, a new bonding member 217b is attached to the lower surface of the buffer pad member 215, so that the polishing pad 201b can be regenerated (S695). The bonding member 217b can be a bonding member made of the same material as the bonding member 217. The polishing pad 201b can include the main pad member 211, the buffer pad member 215, and the bonding member 217b. The main pad member 211 has a groove 213b with the depth D2 formed on the upper surface and has the thickness T 2 , the buffer pad member 215 is attached to the lower surface of the main pad member 211, and the bonding member 217b is attached to the lower surface of the buffer pad member 215.

[0117] As a result of the determination in step S640, asFigure 3e As shown, when the thickness T of the main pad member 211 of the polishing pad from which the damaged portion of the groove has been removed 1 "is not a thickness that can form a groove with a depth greater than or equal to the standard depth (S640: No), a groove with a depth greater than or equal to the standard depth cannot be formed in the main pad member 211 by performing the re-grooving process. Therefore, after removing the buffer pad member 215, the thickness of the main pad member 211 is supplemented, and then the re-grooving process is performed, so that a groove with a depth greater than or equal to the standard depth can be formed in the main pad member 211.

[0118] Specifically, as Figure 3e shown, in the damaged portion removal process (S630), the upper portion of the main pad member 211 of the polishing pad is partially removed, so the groove 213a of the main pad member 211 "can have a depth D less than the above-mentioned depth D 1 of depth D 1 ", and the main pad member 211 can have a thickness T less than the above-mentioned thickness T 1 of thickness T 1 ".

[0119] Subsequently, since the main pad member 211 of the polishing pad from which the damaged portion of the groove has been partially removed in step S620 has a thickness T that cannot form a groove with a depth greater than or equal to the standard depth 1 ", a process for supplementing the thickness of the main pad member 211 can be performed to be able to form a groove with a depth greater than or equal to the standard depth.

[0120] First, as Figure 3f shown, the buffer pad member 215 can be separated from the main pad member 211 (S650). After performing the process of removing the buffer pad member 215 from the main pad member 211, a cleaning process for the main pad member 211 can be performed. The cleaning process performed after removing the buffer pad member 215 can be performed in the same manner as at least one of the cleaning processes in step S600, the cleaning process in step S610, and the cleaning process in step S620.

[0121] For example, the buffer pad member 215 can be separated from the main pad member 211 using a jig. The method of separating the buffer pad member 215 from the main pad member 211 is not limited to the method using a jig. As another example, the buffer pad member 215 can be separated from the main pad member 211 using an organic solvent. When the buffer pad member 215 is attached to the main pad member 211 using double-sided tape, the adhesive member 217 can be separated from the buffer pad member 215 using the above-mentioned adhesive member removal method.

[0122] Subsequently, asFigure 3g As shown, the pad member 211c can be regenerated (S660) by attaching an auxiliary pad member 219c for supplementing the thickness of the main pad member to the lower surface of the main pad member 211. Therefore, the pad member 211c may include the main pad member 211 and the auxiliary pad member 219c attached to the main pad member 211.

[0123] The auxiliary pad member 219c may be made of the same material as the main pad member 211. The main pad member 211 may be made of a polyurethane-based material. The auxiliary pad member 219c may be made of a polyurethane-based material having a coefficient of restitution characteristic that is the same as or similar to that of the main pad member 211. The auxiliary pad member 219c may have a thickness sufficient to provide the main pad member 211 with a thickness capable of forming a groove having a standard depth. Therefore, the pad member 211c may have a thickness T corresponding to the total thickness of the main pad member 211 and the auxiliary pad member 219c. 3 The thickness T of the pad member 211c 3 may be large enough to form a groove having a depth greater than or equal to the standard depth in a subsequent process. For example, the auxiliary pad member 219c may have a thickness of 700 μm to 2000 μm. The auxiliary pad member 219c may be attached to the main pad member 211 by a pressing method. In the embodiment of the present application, the auxiliary pad member 219c is shown to be made of the same material as the main pad member 211, but the present application is not necessarily limited thereto.

[0124] As Figure 3h shown, by performing a re-grooving operation on the upper surface of the pad member 211c, a groove 213c having a depth D greater than or equal to the standard depth can be formed on the upper surface of the pad member 211c, specifically, on the upper surface of the main pad member 211 (S670). Therefore, the pad member 211c is composed of the remaining main pad member 211 and the auxiliary pad member 219c, and the pad member 211c may have a groove 213a having a depth D formed on the upper surface and a thickness T 3 . 3 The pad member 211c may have a groove 213a having a depth D formed on the upper surface and a thickness T 3 .

[0125] Subsequently, a re-grooving operation may be performed to form a groove having the depth D 3The groove 213c, and then the above-mentioned regenerated pad member 211c can be subjected to a cleaning process. The cleaning process performed after forming the above-mentioned groove can be carried out in the same manner as at least one of the cleaning processes for removing foreign matter in the groove in step S600, the cleaning process for removing the residue of the bonding member in step S610, the cleaning process after removing the damaged part in step S620, and the cleaning process after the buffer pad member removing process in step S650.

[0126] Subsequently, as Figure 3i shown, the buffer pad member 215c can be attached to the lower surface of the above-mentioned auxiliary pad member 219c (S680). For example, the above-mentioned buffer pad member 215c can be a new buffer pad member made of the same material as the above-mentioned buffer pad member 215c. As another example, as the above-mentioned buffer pad member 215c, the buffer pad member 215 separated from the above-mentioned main pad member 211 in step S650 can be reused.

[0127] As Figure 3j shown, the polishing pad 201c can be regenerated by attaching a new bonding member 217c to the lower surface of the above-mentioned buffer pad member 215c (S690). The above-mentioned bonding member 217c can be composed of the same bonding member as the above-mentioned bonding member 217. Therefore, the regenerated above-mentioned polishing pad 201c can include a pad member 211c, the above-mentioned buffer pad member 215c, and a bonding member 217c. The above-mentioned pad member 211c is composed of the above-mentioned main pad member 211 and the auxiliary pad member 219c. The above-mentioned main pad member 211 has the above-mentioned thickness T 3 and has a groove 213c with the above-mentioned depth D formed on the upper surface 3 . The above-mentioned auxiliary pad member 219c is attached to the lower surface of the above-mentioned main pad member 211. The above-mentioned buffer pad member 215c is attached to the lower surface of the above-mentioned auxiliary pad member 219c. The above-mentioned bonding member 217c is attached to the lower surface of the above-mentioned buffer pad member 215c.

[0128] Figures 3a to 3j The polishing pad regeneration method can stably chemically remove the above-mentioned bonding member 217 from the above-mentioned buffer pad member 215 using an organic solvent, and thus can provide the regeneration rate of the polishing pads 201b and 201c.

[0129] In addition, in the regenerated polishing pad 201c, the above-mentioned main pad member 211 or the above-mentioned pad member 211c has a thickness T capable of forming a groove with a depth greater than or equal to the standard depth 2 、T 3 , and the depths D 2 、D 3 of the above-mentioned grooves 213b and 213c are greater than or equal to the standard depth, and thus the required CMP function can be exerted.

[0130] In addition, the main pad member 211 can be re-grooved without separating the buffer pad member 215 from the main pad member 211, so that a groove 213b with a depth greater than or equal to the standard depth is formed in the main pad member 211, and then the adhesive member 217b is attached to the buffer pad member 215, thereby regenerating the polishing pad 201b. Therefore, not only can the manufacturing cost be reduced, but also the polishing pad regeneration process can be simplified.

[0131] In addition, by attaching the auxiliary pad member 219c to the main pad member 211 to sufficiently ensure the thickness of the pad member 211c, and then performing the re-grooving operation, a groove capable of performing CMP can be stably formed, and the buffer pad member 215 removed from the main pad member 211 can be reused. Therefore, not only can the manufacturing cost be reduced, but also the regeneration rate of the polishing pad can be improved.

[0132] In addition, in accordance with Figures 3a to 3j In the polishing pad regeneration method according to an embodiment shown, the main pad member and the buffer pad member, the main pad member and the auxiliary pad member, and the auxiliary pad member and the buffer pad member are directly attached and composed of a single layer, but the present application is not limited thereto. In another embodiment, an adhesive member can be interposed between at least one of the main pad member and the buffer pad member, the main pad member and the auxiliary pad member, and the auxiliary pad member and the buffer pad member and bond them. In addition, although examples in which the buffer pad member, the auxiliary pad member, and the buffer pad member are each composed of a single layer are shown, at least one of them can be composed of multiple layers and directly attached or attached through an adhesive member.

[0133] Although in accordance with Figures 3a to 3j In an example of the polishing pad regeneration method according to an embodiment shown, in step S620, the upper part of the groove 213 damaged due to repeated CMP processes is partially removed, but the present application is not limited thereto. In another example, the groove can be completely removed by a planarization process.

[0134] Figures 4a to 4i FIG. is a cross-sectional view for explaining another example of a method for regenerating a worn polishing pad according to an embodiment of the present application.

[0135] Next, reference will be made to Figures 4a to 4i and Figure 6 A method for regenerating a polishing pad according to an embodiment of the present application will be described in detail.

[0136] Similar to the polishing pad regeneration method of an example, the cleaning process (S600) for the worn polishing pad 210e, the process of removing the bonding member (S610), the process of removing the damaged part of the upper side of the worn polishing pad 201e (S620), and the process of measuring the thickness of the polishing pad (S630) can be carried out in sequence.

[0137] However, different from the polishing pad regeneration method of an example of partially removing the grooves, the process of removing the damaged part of the upper side of the worn polishing pad 201e (S620) can be carried out so that the grooves 213e of the main pad member 211 are completely removed. For example, a flattening process can be performed on the main pad member 211 so that the grooves 213e are completely removed, thereby flattening the upper surface of the main pad member 211.

[0138] For example, as Figure 4a shown, the worn polishing pad 210e can include a main pad member 211, a buffer pad member 215, and a bonding member 217. The upper surface of the main pad member 211 is formed with grooves 213e having a depth D 4 , and the thickness of the main pad member 211 including the grooves 213e can be "T 4 ", and the thickness of the part of the main pad member 211 where the grooves 213e are formed can be "a 4 ".

[0139] As described above, after performing the processes from S600 to S630, it can be determined whether the thickness measured from the main pad member 211 from which the grooves 213e are completely removed is a thickness capable of forming a groove for polishing, that is, whether it is a thickness capable of forming a groove with a depth greater than or equal to the standard depth (S640).

[0140] As a result of the determination in step S640, as Figure 4b shown, if the thickness (T 4 ' = a 4 ) of the main pad member 211 with the upper surface flattened is a thickness capable of forming a groove with a depth greater than or equal to the standard depth (S640: Yes), a re-grooving process is performed to be able to form a groove with a depth greater than or equal to the standard depth in the main pad member 211.

[0141] Specifically, as Figure 4b shown, in the main pad member 211 of the polishing pad, the grooves 213e are completely removed in the damaged part removal process (S620), so the main pad member 211 can have a thickness T 4 less than the thickness T 4'。A planarization process is performed on the main pad member 211 to completely remove the groove 213e, thereby planarizing the upper surface of the main pad member 211 such that the thickness T of the main pad member 211 4 can be equal to or less than the thickness a of the main pad member 211 of the portion where the groove 213e is formed 4 。

[0142] Subsequently, since the thickness of the main pad member 211 of the polishing pad from which the groove has been completely removed in step S620 is a thickness capable of forming a groove with a depth greater than or equal to the standard depth, thus, as Figure 4c shown, a re-grooving operation can be performed on the main pad member 211 to form a groove 213f in the main pad member 211 (S675). Therefore, the main pad member 211 has the thickness (T 5 = T 4 '), and a groove 213f with a depth D greater than or equal to the standard depth can be formed 5 。

[0143] After a groove 213f with the depth D 5 is formed in the main pad member 211, a cleaning process for the main pad member 211 can be performed. The cleaning process performed after forming the groove 213f can be performed in the same manner as at least one of the polishing pad cleaning process in step S600, the cleaning process for removing the adhesive member residue in step S610, and the cleaning process after removing the damaged portion in step S620.

[0144] Next, as Figure 4d shown, a new adhesive member 217f is attached to the lower surface of the buffer pad member 215 to enable the regeneration of the polishing pad 201f (S695). The adhesive member 217f can be made of the same material as the adhesive member 217. Therefore, the polishing pad 201f can include the main pad member 211, the buffer pad member 215, and the adhesive member 217f. The main pad member 211 has a groove 213f with the depth D 5 formed on its upper surface and has the thickness T 5 , the buffer pad member 215 is attached to the lower surface of the main pad member 211, and the adhesive member 217f is attached to the lower surface of the buffer pad member 215.

[0145] As a result of the determination in step S640, as Figure 4e shown, when the thickness T of the main pad member 211 of the polishing pad from which the groove has been completely removed 4When the thickness is not such that a groove with a depth greater than or equal to the standard depth can be formed (S640: No), a groove with a depth greater than or equal to the standard depth cannot be formed in the main pad member 211 by performing the re-grooving process. Therefore, after removing the buffer pad member 215, the thickness of the main pad member 211 is supplemented, and then the re-grooving process is performed, so that a groove with a depth greater than or equal to the standard depth can be formed in the main pad member 211.

[0146] Specifically, as Figure 4e shown, in the damaged part removal process (S630), the groove of the main pad member 211 of the polishing pad is completely removed, so the main pad member 211 can have a thickness T 4 less than the above thickness T 4 ", and the thickness T 4 of the main pad member 211 can be equal to or less than the thickness a 4 of the main pad member 211 in which the above groove is formed.

[0147] Subsequently, since the main pad member 211 of the polishing pad from which the groove has been completely removed in step S620 has a thickness T 4 that cannot form a groove with a depth greater than or equal to the standard depth, a process for supplementing the thickness of the main pad member 211 can be performed so that a groove with a depth greater than or equal to the standard depth can be formed.

[0148] First, as Figure 4f shown, the buffer pad member 215 can be separated from the main pad member 211 (S650). The buffer pad member 215 is separated from the main pad member 211 in the same manner as an example of the polishing pad regeneration method according to an embodiment, and then a cleaning process can be performed on the main pad member 211.

[0149] Subsequently, as Figure 4g shown, the pad member 211g can be regenerated (S660) by attaching an auxiliary pad member 219g for supplementing the thickness of the main pad member to the lower surface of the main pad member 211. Therefore, the pad member 211g can include the main pad member 211 and the auxiliary pad member 219g attached to the main pad member 211.

[0150] The auxiliary pad member 219g can be made of the same material as the main pad member 211, but the present application is not necessarily limited thereto. The auxiliary pad member 219g can have a thickness sufficient to provide the main pad member 211 with a thickness capable of forming a groove with a standard depth. Therefore, the pad member 211g can have a thickness T corresponding to the total thickness of the main pad member 211 and the auxiliary pad member 219g. 6and the thickness T of the above-mentioned pad member 211g 6 can be large enough to form a groove with a depth greater than or equal to the standard depth in subsequent processes.

[0151] For example, the above-mentioned main pad member 211 may be made of a polyurethane-based material. The above-mentioned auxiliary pad member 219g may be made of a polyurethane-based material having a recovery coefficient characteristic the same as or similar to that of the above-mentioned main pad member 211. The above-mentioned auxiliary pad member 215g may have a thickness greater than or equal to the thickness of the groove removed in step S620. For example, the above-mentioned auxiliary pad member 215g may have a thickness of 700 μm to 2000 μm. The above-mentioned auxiliary pad member 215g may be attached to the above-mentioned main pad member 211 by a pressing method, or may be attached to the above-mentioned main pad member 211 using an adhesive member.

[0152] As Figure 4h shown, a re-grooving operation may be performed on the upper surface of the above-mentioned pad member 211g to form a depth D greater than or equal to the standard depth on the upper surface of the above-mentioned pad member 211g, specifically on the upper surface of the above-mentioned main pad member 211 6 of the groove 213g (S670). Therefore, the above-mentioned pad member 211g may be composed of the remaining above-mentioned main pad member 211 and the above-mentioned auxiliary pad member 219g, and a groove 213g having the above-mentioned depth D is formed on the upper surface, and has a thickness T 6 6 .

[0153] Subsequently, a re-grooving operation is performed to form a groove 213g having the above-mentioned depth D 6 , and then a cleaning process for the regenerated above-mentioned pad member 211g may be performed by the same method as an example of a polishing pad regeneration method according to an embodiment.

[0154] Subsequently, as Figure 4i shown, a buffer pad member 215g may be attached to the lower surface of the above-mentioned pad member 211g, for example, the lower surface of the above-mentioned auxiliary pad member 219g (S680). For example, the above-mentioned buffer pad member 215g may be a new buffer pad member made of the same material as the above-mentioned buffer pad member 215. As another example, as the above-mentioned buffer pad member 215g, the buffer pad member 215 separated from the above-mentioned main pad member 211 in step S650 may be reused.

[0155] ​Next, the polishing pad 201g can be regenerated by attaching a new adhesive member 217g to the lower surface of the above-mentioned cushion member 215g (S690). The above-mentioned adhesive member 217g can be composed of the same adhesive member as the above-mentioned adhesive member 217. Therefore, the regenerated polishing pad 201g can include a pad member 211g, the above-mentioned cushion member 215g, and an adhesive member 217g. The pad member 211g is composed of the above-mentioned main pad member 211 and an auxiliary pad member 219g. The main pad member 211 has the above-mentioned thickness T 6 and has a groove 213g with the above-mentioned depth D formed on the upper surface 6 . The auxiliary pad member 219g is attached to the lower surface of the main pad member 211. The cushion member 215g is attached to the lower surface of the pad member 211, that is, the lower surface of the auxiliary pad member 219g, and the adhesive member 217g is attached to the lower surface of the cushion member 215g.

[0156] Figures 7a to 7h FIG. showing an example of a polishing pad regeneration method according to another embodiment of the present application. Figure 9 FIG. is a flowchart for explaining a polishing pad regeneration method according to another embodiment of the present application.

[0157] Next, reference will be made to Figures 7a to 7h and Figure 9 to describe an example of a polishing pad regeneration method according to another embodiment of the present application.

[0158] As Figure 7a shown, the polishing pad 201i can include a main pad member 211, a cushion member 215, and an adhesive member 217. The main pad member 211 can have a groove 213i with a depth D formed on the upper surface 7 . The groove 213i can have a depth D smaller than the standard depth 7 , and the thickness T 7 of the main pad member 211 can be smaller than the thickness sufficient to form a groove with a depth greater than or equal to the standard depth by re-grooving.

[0159] Therefore, as the above-mentioned polishing pad 201i undergoes repeated CMP processes, the depth of the groove 213i gradually decreases, and the thickness of the main pad member 211 also gradually decreases accordingly, such that the above-mentioned polishing pad 201i can be determined to be unable to perform the CMP process stably (S900). The thickness T 6 of the main pad member 211 can be measured using a surface detector using a laser 3D displacement measurement device, but the present application is not limited thereto.

[0160] When the thickness T 7When it is not thick enough to form a groove with a depth greater than or equal to the standard depth, in order to perform a regeneration process on the polishing pad 201i, first, a cleaning process (S910) can be performed on the polishing pad 201i.

[0161] The above cleaning process can be performed to remove various foreign substances such as reaction products and process residues generated during repeated CMP processes that accumulate on the main pad member 211 and the groove 213i. In another embodiment of the present application, the polishing pad 201i can be cleaned by using physical cleaning, dry cleaning, wet cleaning, chemical cleaning, etc.

[0162] The above physical cleaning can include brush scrubbing cleaning, etc. The above dry cleaning can include blowing cleaning, tornado cleaning, or plasma cleaning, etc. The above wet cleaning can include water jet cleaning, jet cleaning, bubble jet cleaning, ultrasonic cleaning, or megahertz ultrasonic cleaning, etc. The above chemical cleaning can include diluted HF (DHF) cleaning, buffered oxide etch (BOE) cleaning, sulfuric acid peroxide mixture (SPM) cleaning, ammonium peroxide mixture (APM) cleaning, and hydrogen peroxide mixture (HPM) cleaning, etc. In addition to the above cleaning process, various cleaning methods can also be used to perform the cleaning process on the polishing pad 205.

[0163] For example, even before the determination step of S900, a cleaning process can be performed on the main pad member 211 of the polishing pad 201i. The cleaning process before the determination step of S900 can also be performed in the same manner as the cleaning process in the above S910 step. As another example, when a cleaning process is performed on the main pad member 211 of the polishing pad 201i before the determination step of S900, the cleaning process of step S910 can be omitted (S910).

[0164] Subsequently, as Figure 7b shown, the buffer pad member 215 can be separated from the cleaned main pad member 211 (S920). For example, a jig can be used to separate the buffer pad member 215 from the main pad member 211. The method of separating the buffer pad member 215 from the main pad member 211 is not limited to the method of using a jig. As another example, an organic solvent can be used to separate the buffer pad member 215 from the main pad member 211.

[0165] When the buffer pad member 215 is attached to the main pad member 211 using a double-sided tape as an adhesive member, similarly to an embodiment, an organic solvent can be used to remove the adhesive member to separate the buffer pad member 215 from the main pad member 211. The process of removing the adhesive member can include immersing the pad member in an organic solvent at room temperature for 1 minute to 5 minutes.

[0166] As an example, the method of separating the buffer pad member 215 from the main pad member 211 may include immersing the main pad member 211 in the organic solvent such that the adhesive of the adhesive member is substantially completely removed, so that the film member of the adhesive member is separated from the buffer pad member 215.

[0167] As another example, the method of separating the buffer pad member 215 from the main pad member 211 may include the following steps: immersing the main pad member 211 in the organic solvent to partially remove the adhesive of the film member such that the film member is in a state where it can be easily removed from the main pad member 211; and physically separating the film member from the main pad member 211. The step of physically separating the film member may include physically separating the film member from the buffer pad member 215 using a jig or physically separating the film member from the buffer pad member 215 by a cutting method using a cutting device.

[0168] As another example, the method of separating the buffer pad member 215 from the main pad member 211 may include the following steps: immersing the pad member in the organic solvent such that the adhesive of the adhesive member is removed only from the edge portion of the main pad member 211; and physically separating the film member from the main pad member using a jig.

[0169] After separating the buffer pad member 215 from the main pad member 211, it may further include the step of further immersing the pad member in an organic solvent to remove the adhesive remaining on the surface of the pad member that removes the adhesive member by immersing the main pad member in the organic solvent.

[0170] Although an example of performing the process (S920) of separating the main pad member 211 and the buffer pad member 215 after performing the above cleaning process (S910) is shown in another embodiment of the present application, the present application is not limited thereto. The above cleaning process (S910) may also be performed after performing the above separation process (S920).

[0171] Subsequently, as Figure 7c shown, the adhesive member 217 may be removed from the buffer pad member 215 (S930). In an embodiment of the present application, the adhesive member 217 may be chemically removed from the main pad member 211 using an organic solvent.

[0172] Similarly to the content described above, the method of chemically removing the adhesive member 217 may include immersing the polishing pad 201a in an organic solvent and removing the polyethylene film of the adhesive member 217 from the buffer pad member 215. For example, the adhesive member 217 can be removed by immersing it in an organic solvent at room temperature for 1 minute to 5 minutes.

[0173] In the method of chemically removing the adhesive member 217, after separating the adhesive member by immersing the buffer pad member 215 in an organic solvent, it can be immersed in the organic solvent a second time to further remove the adhesive that may remain on the surface of the buffer pad member 215.

[0174] The method of chemically removing the adhesive member 217 may further include cleaning the buffer pad member 215 after removing the adhesive member 217 from the buffer pad member 215 so that it can be reused in the processes described below. The cleaning process in S930 can be performed in the same manner as at least one of the cleaning processes in S910 and S920.

[0175] For example, the organic solvent may be composed of two polar organic solvents, one non-polar organic solvent, and a non-ionic surfactant. The contents of the two polar organic solvents may be 10% to 30% by weight and 50% to 80% by weight, respectively, the content of the non-polar organic solvent is 1% to 20% by weight, and the content of the non-ionic surfactant is 0.1% to 1% by weight. In addition, the polar organic solvents may include dimethyl sulfoxide, acetonitrile, tetrahydrofuran, methanol, ethanol, isopropanol, ethyl acetate, acetone, dimethyl carbonate, dimethylformamide, dimethylacetamide, etc. The non-polar organic solvents may include 1,4-di ane, hexane, toluene, diethyl ether, petroleum ether, cyclohexane, chloroform, hydrofluorocarbon, etc.

[0176] By immersing the polishing pad in the organic solvent under the above conditions to remove the adhesive component of the adhesive member 217, the adhesive member 217 can be easily removed from the main pad member 211 or the buffer pad member 215. Therefore, the polyethylene film of the adhesive member can be easily and simply removed from the main pad member 211 and the buffer pad member 215 without damaging the polishing pad 201i, specifically, the main pad member 211 and the buffer pad member 215.

[0177] Referring to FIG. 5, it can be seen that the adhesive component of the adhesive member has been successfully removed by the above cleaning process. Specifically, as Figure 5a shown, when the polishing pad is immersed in the organic solvent at room temperature for 1 minute to 5 minutes, as Figure 5bAs shown, the adhesive component of the bonding member is removed so that the film component is in a state where it can be easily removed. Figure 5c The pad member of the bonding member is shown being removed without damage.

[0178] Although in another embodiment of the present application, a process (S920) of separating the main pad member 211 and the buffer pad member 215, a process of removing the bonding member 217 from the buffer pad member 215, and a process (S930) of cleaning the buffer pad member 215 from which the bonding member has been removed are shown after performing the above cleaning process (S910), the present application is not limited thereto, and the above cleaning process (S910) may be performed after performing the separation process (S920) of the buffer pad member and / or the bonding member removal and cleaning process (S930).

[0179] As an example, a process (S920) of separating the buffer pad member 215 from the main pad member 211 can be performed, a cleaning process (S910) for removing foreign matters accumulated on the upper surface of the main pad member 211 and the groove 213 can be performed, a process (S930) of removing the bonding member 217 from the buffer pad member 215, and a process (S930) of cleaning the buffer pad member 215 from which the bonding member 217 has been removed can be performed.

[0180] As another example, after sequentially performing the process (S920) of separating the buffer pad member 215 from the main pad member 211 and the process (S930) of removing the bonding member 217 from the buffer pad member 215, a cleaning process (S910) for removing foreign matters accumulated on the upper surface of the main pad member 211 and the groove 213 and a process (S930) of cleaning the buffer pad member 215 from which the bonding member 217 has been removed can be sequentially performed.

[0181] As yet another example, after sequentially performing the process (S920) of separating the buffer pad member 215 from the main pad member 211 and the process (S930) of removing the bonding member 217 from the buffer pad member 215, a cleaning process (S910) for removing foreign matters accumulated on the upper surface of the main pad member 211 and the groove 213 and a process (S930) of cleaning the buffer pad member 215 from which the bonding member 217 has been removed can be performed simultaneously.

[0182] The upper shape of the above groove 213 is damaged due to repeated CMP processes. Therefore, as Figure 7d shown, the upper side portion of the main pad member 211, that is, the damaged portion, can be partially removed by a planarization process (S940). Therefore, the groove 213 of the main pad member 211 can have a depth less than the above depth D7 depth D 7 ', and the main pad member 211 may have a thickness less than the above thickness T 7 thickness T 7 '.

[0183] Subsequently, as Figure 7e shown, the auxiliary pad member 219j may be attached to the lower surface of the main pad member 211 from which the damaged portion of the groove 213 has been partially removed (S950). Accordingly, a pad member 211j including the main pad member 211 and the auxiliary pad member 219j attached to the lower surface of the main pad member 211 may be formed. The pad member 211j may have a thickness T corresponding to the sum of the thicknesses of the main pad member 211 and the auxiliary pad member 219j 8 .

[0184] The auxiliary pad member 219j may be made of the same material as the main pad member 211. The main pad member 211 may be made of a polyurethane-based material. The auxiliary pad member 219j may be made of a polyurethane-based material having a coefficient of restitution characteristic the same as or similar to that of the main pad member 211. The auxiliary pad member 219j may have a thickness greater than or equal to the thickness of the groove removed in step S930. For example, the auxiliary pad member 219j may have a thickness of 700 μm to 2000 μm. As an example, the auxiliary pad member 219j may be attached to the main pad member 211 by a pressing method. In the embodiment of the present application, the auxiliary pad member 219j is shown to be made of the same material as the main pad member 211, but the present application is not necessarily limited thereto.

[0185] Subsequently, the pad member 211j to which the auxiliary pad member 219j is attached to the main pad member 211 has a thickness T capable of forming a groove having a depth greater than or equal to a standard depth 8 , and thus, as Figure 7f shown, the pad member 211j may be re-grooved to form a groove 213j having a depth D greater than or equal to the standard depth on the upper surface of the main pad member 211 8 (S960). Accordingly, the pad member 211j may include the remaining main pad member 211 and the auxiliary pad member 219j and have the above thickness T 8 , and the main pad member 211 has a groove 213j having a depth D formed on the upper surface 8 .

[0186] As Figure 7gAs shown, the cushioning pad member 215j can be attached to the lower surface of the auxiliary cushioning pad member 219j of the cushioning member 211j (S970). For example, as the cushioning pad member 215j, the cushioning pad member 215 separated from the main cushioning member 211 in step S920 can be reused. Therefore, by reusing the cushioning pad member 215, the effect of cost reduction can be obtained. As another example, it can be composed of a new cushioning pad member made of the same material as the cushioning pad member 215.

[0187] As Figure 7h shown, the polishing pad 201j can be regenerated (S980) by attaching a new bonding member 217j to the lower surface of the cushioning pad member 215j. The regenerated polishing pad 201j can include a cushioning member 211j, the cushioning pad member 215j, and the bonding member 219j. The cushioning member 211j is composed of the remaining main cushioning member 211 and the auxiliary cushioning pad member 219j. The main cushioning member 211 has a groove 213j with a depth D formed on its upper surface 7 therein.

[0188] Although an example of attaching the bonding member to the cushioning pad member after attaching the cushioning pad member to the regenerated cushioning member is shown in another embodiment, the present application is not limited thereto. It is also possible to attach the cushioning pad member with the adhesive attached thereto to the auxiliary cushioning pad member of the regenerated cushioning member after attaching the bonding member to the cushioning pad member.

[0189] Figures 8a to 8f FIG. is a cross-sectional view for another example of a method for regenerating a worn polishing pad according to another embodiment of the present application.

[0190] Next, with reference to Figures 8a to 8f and Figure 9 a method for regenerating a worn polishing pad according to another embodiment of the present application will be described in detail.

[0191] As Figure 8a shown, the polishing pad 201m can include a main cushioning member 211, a cushioning pad member 215, and a bonding member 217. The main cushioning member 211 can have a groove 213m with a depth D formed on its upper surface 9 therein. The groove 213m can have a depth D less than the standard depth 9 , and the thickness T 9 of the main cushioning member 211 can be smaller than the thickness sufficient to form a groove with a depth greater than or equal to the standard depth by re-grooving.

[0192] Therefore, as the above-mentioned polishing pad 201m undergoes repeated CMP processes, the depth of the above-mentioned groove 213m gradually decreases, and the thickness of the main pad member 211 also gradually decreases accordingly, such that it can be determined that the above-mentioned polishing pad 201m cannot stably perform the CMP process (S900). The thickness T9 of the above-mentioned main pad member 211 can be measured in the same manner as in an embodiment.

[0193] When the thickness T of the above-mentioned main pad member 211 9 is insufficient to form a groove with a depth greater than or equal to the standard depth, in order to perform a regeneration process on the above-mentioned polishing pad 201m, first, a cleaning process is performed on the above-mentioned polishing pad 201m (S910).

[0194] Similar to an embodiment, the above-mentioned cleaning process can be performed to remove various foreign substances such as reaction products and process residues generated during the repeated CMP process that accumulate on the above-mentioned main pad member 211 and the above-mentioned groove 213i. In another embodiment of the present application, the above-mentioned polishing pad 201m can also be cleaned by physical cleaning, dry cleaning, wet cleaning, chemical cleaning, etc.

[0195] For example, even before the determination step of S900, a cleaning process can be performed on the main pad member 211 of the above-mentioned polishing pad 201m. The cleaning process before the determination step of S900 can also be performed in the same manner as the cleaning process in the above-mentioned S910 step. As another example, when a cleaning process is performed on the main pad member 211 of the above-mentioned polishing pad 201m before the determination step of S900, the cleaning process of the S910 step can be omitted (S910).

[0196] Subsequently, as Figure 8b shown, the above-mentioned buffer pad member 215 can be separated from the cleaned above-mentioned main pad member 211 (S920). For example, the removal process of the above-mentioned buffer pad member 215 can be performed in the same manner as an example of a polishing pad regeneration method in another embodiment.

[0197] Although an example of performing the process of separating the above-mentioned main pad member 211 and the above-mentioned buffer pad member 215 (S920) after performing the above-mentioned cleaning process (S910) is shown in another embodiment of the present application, the present application is not limited thereto. The above-mentioned cleaning process (S910) can also be performed after performing the above-mentioned separation process (S920).

[0198] Subsequently, as Figure 8cAs shown, the adhesive member 217 can be removed from the cushion member 215 (S930). In an embodiment of the present application, an organic solvent can be used to chemically remove the adhesive member 217 from the cushion member 215. Similar to an example of the polishing pad regeneration method of the other embodiment, the method of removing the adhesive member 217 can be carried out at room temperature for 1 minute to 5 minutes, and may further include secondarily immersing the cushion member 215 in an organic solvent to further remove the adhesive that may remain on the cushion member 215.

[0199] The method of chemically removing the adhesive member 217 may further include removing the adhesive member 217 from the cushion member 215, and then cleaning the cushion member 215 of the polishing pad from which the adhesive member 217 has been removed. The cleaning process in S920 can be carried out in the same manner as the cleaning process in S910.

[0200] By immersing the cushion member 215 in an organic solvent under the above conditions to remove the adhesive component of the adhesive member 217, the adhesive member 217 can be easily removed from the cushion member 215. Therefore, the polyethylene film of the adhesive member 217 can be easily and simply removed from the main pad member 211 and the cushion member 215 without damaging the polishing pad 201m, specifically, the main pad member 211.

[0201] Although an example is shown in another embodiment of the present application in which the process of separating the main pad member 211 and the cushion member 215 (S920), the process of removing the adhesive member 217 from the cushion member 215, and the process of cleaning the cushion member 215 from which the adhesive member has been removed (S930) are carried out after the above cleaning process (S910), the present application is not limited thereto, and the above cleaning process (S910) can be carried out after the separation process (S920) of the cushion member and / or the adhesive member removal and cleaning process (S930).

[0202] As an example, the process of separating the cushion member 215 from the main pad member 211 (S920) can be carried out, the cleaning process (S910) for removing foreign substances accumulated on the upper surface of the main pad member 211 and the grooves 213 can be carried out, the process of removing the adhesive member 217 from the cushion member 215 (S930), and the process of cleaning the cushion member 215 from which the adhesive member 217 has been removed (S930) can be carried out.

[0203] As another example, after sequentially performing the process of separating the buffer pad member 215 from the main pad member 211 (S920) and the process of removing the adhesive member 217 from the buffer pad member 215 (S930), a cleaning process (S910) for removing foreign matter accumulated on the upper surface of the main pad member 211 and the groove 213 and a cleaning process (S930) for cleaning the buffer pad member 215 from which the adhesive member 217 has been removed can be sequentially performed.

[0204] As still another example, after sequentially performing the process of separating the buffer pad member 215 from the main pad member 211 (S920) and the process of removing the adhesive member 217 from the buffer pad member 215 (S930), a cleaning process (S910) for removing foreign matter accumulated on the upper surface of the main pad member 211 and the groove 213 and a cleaning process (S930) for cleaning the buffer pad member 215 from which the adhesive member 217 has been removed can be performed simultaneously.

[0205] Subsequently, since the upper shape of the groove 213m is damaged due to repeated CMP processes, the surface of the main pad member 211 can be flattened by performing a planarization process on the main pad member 211 such that the groove 213m is completely removed (S940). Therefore, the main pad member 211 can have a thickness less than the thickness T 9 of (T 9 ' = a 9 ').

[0206] Subsequently, as Figure 8d shown, the auxiliary pad member 219n can be attached to the lower surface of the main pad member 211 from which the groove 213m has been completely removed (S950). Therefore, a pad member 211n including the main pad member 211 and the auxiliary pad member 219n attached to the lower surface of the main pad member 211 can be formed. The pad member 211n can have a thickness T corresponding to the sum of the thicknesses of the main pad member 211 and the auxiliary pad member 219n 10 .

[0207] The auxiliary pad member 219n can be made of the same material as the main pad member 211. The main pad member 211 can be made of a polyurethane-based material. The auxiliary pad member 219n can be made of a polyurethane-based material having a restitution coefficient characteristic the same as or similar to that of the main pad member 211. The auxiliary pad member 219n can have a thickness greater than or equal to the thickness of the groove removed in step S930. For example, the auxiliary pad member 219n can have a thickness of 700 μm to 2000 μm. The auxiliary pad member 219n can be attached to the main pad member 211 by a pressing method.

[0208] Subsequently, since the pad member 211n of the auxiliary pad member 219n attached to the main pad member 211 has a thickness T capable of forming a groove with a depth greater than or equal to the standard depth 10 , thus, as Figure 8e shown, a re-grooving operation can be performed on the above-mentioned pad member 211n to form a groove 213n with a depth D greater than the standard depth on the upper surface of the above-mentioned main pad member 211 10 . Therefore, the above-mentioned pad member 211n can include the remaining main pad member 211 and the above-mentioned auxiliary pad member 219n and has the above-mentioned thickness T 10 , and the above-mentioned main pad member 211 is formed with a groove 213n having a depth D on the upper surface 10 .

[0209] As Figure 8f shown, the buffer pad member 215n can be attached to the lower surface of the above-mentioned auxiliary pad member 219n of the above-mentioned pad member 211n (S970). For example, as the above-mentioned buffer pad member 215n, the above-mentioned buffer pad member 215 separated from the above-mentioned main pad member 211 in step S920 can be reused. Therefore, by reusing the above-mentioned buffer pad member 215, the effect of cost reduction can be obtained. As another example, it can be composed of a new buffer pad member made of the same material as the above-mentioned buffer pad member 215

[0210] Next, the polished pad 201n can be regenerated by attaching a new adhesive member 217n to the lower surface of the above-mentioned buffer pad member 215n (S980). The regenerated polished pad 201n can include a pad member 211n, the above-mentioned buffer pad member 215n, and the above-mentioned adhesive member 219n. The pad member 211n is composed of the remaining main pad member 211 and the above-mentioned auxiliary pad member 219n, and the above-mentioned main pad member 211 is formed with a groove 213n having a depth D on the upper surface 10 .

[0211] Although in another embodiment, an example is shown in which the adhesive member is attached to the buffer pad member after attaching the buffer pad member to the regenerated main pad member, the present application is not limited thereto. It is also possible to attach the buffer pad member with the above-mentioned adhesive to the above-mentioned auxiliary pad member of the above-mentioned regenerated main pad member after attaching the adhesive member to the buffer pad member

[0212] Although in the embodiments of the present application, examples are shown in which the buffer pad member and the auxiliary pad member are each composed of a single layer, the present application is not limited thereto, and they can be composed of multiple layers respectively and attached through an adhesive member

[0213] As described above, according to the present embodiment, the bonding member composed of the double-sided adhesive can be easily removed from the pad member, so that damage to the polishing pad caused by the removal of the bonding member can be prevented. Therefore, the reuse rate of the worn polishing pad can be increased.

[0214] In addition, if the depth of the groove becomes lower than the standard depth at which the CMP process can be performed due to the continuous progress of the CMP process, a part of the upper surface of the main pad or the entire damaged groove is removed, and then a groove with a standard depth can be formed on the upper surface of the main pad. Therefore, the service life of the expensive CMP pad can be extended.

[0215] On the other hand, if the thickness of the main pad becomes too thin to form a groove with a standard depth, an auxiliary pad can be attached to the main pad so that the main pad has a thickness capable of forming a groove with a standard depth. Therefore, the expensive CMP pad can be reused for a long time.

[0216] As described above, the present application has been described in detail with reference to the preferred embodiments of the present application, but those skilled in the art will understand that various modifications and changes can be made to these embodiments without departing from the spirit and scope of the present application recited in the appended claims.

Claims

1. A method for removing an adhesive member, characterized in that: The steps include: A cushion member is provided, the cushion member being composed of a main cushion member and a cushion member having one surface attached to the main cushion member, and an adhesive member composed of an adhesive and a film member being attached between one surface of the cushion member and the main cushion member and at least one of the other surface of the cushion member; and The bonding member is chemically removed from the pad member.

2. The adhesive member removal method according to claim 1, characterized in that: The adhesive member includes a double-sided tape formed by applying the adhesive on both sides of the film member.

3. The adhesive member removal method according to claim 1, characterized in that: The adhesive comprises a polyacrylic adhesive or an epoxy material. The film member includes a polyethylene film.

4. The adhesive member removal method according to claim 1, characterized in that: The step of removing the bonding member includes immersing the pad member in an organic solvent at room temperature for 1 minute to 5 minutes.

5. The adhesive member removal method according to claim 4, characterized in that: The organic solvent consists of two polar organic solvents, a non-polar organic solvent and a non-ionic surfactant.

6. The adhesive member removal method according to claim 5, characterized in that: The contents of the two polar organic solvents are 10 to 30 wt % and 50 to 80 wt % respectively, the content of the non-polar organic solvent is 1 to 20 wt %, and the content of the nonionic surfactant is 0.1 to 1 wt %.

7. The adhesive member removal method according to claim 4, characterized in that: In the step of removing the bonding member, the pad member is immersed in the organic solvent so that the adhesive of the bonding member is substantially completely removed and the film member of the bonding member is separated from the main pad member or the cushion member.

8. The adhesive member removal method according to claim 4, characterized in that: The step of removing the bonding member comprises the following steps: immersing the pad member in the organic solvent to partially remove the adhesive of the film member so that the film member is in a state that can be easily removed from the main pad member or the buffer pad member; and The film member is physically separated from the main pad member or the cushion member.

9. The adhesive member removal method according to claim 8, characterized in that: The step of physically separating the film member includes physically separating the film member from the main pad member or the buffer pad member using a jig or physically separating the film member from the main pad member or the buffer pad member by cutting using a cutting device.

10. The adhesive member removal method according to claim 4, characterized in that: The step of removing the bonding member comprises the following steps: immersing the pad member in the organic solvent so that the adhesive of the adhesive member is removed only from the edge portion of the pad member; and The film member is physically separated from the main pad member or the cushion member using a jig.

11. The adhesive member removal method according to claim 4, characterized in that: After removing the bonding member by immersing the pad member in an organic solvent, further immersing the pad member in an organic solvent to remove adhesive remaining on the surface of the main pad member or the cushion pad member from which the bonding member has been removed.

12. The adhesive member removal method according to claim 1, characterized in that: After removing the adhesive member from the pad member, the method further includes cleaning the pad member from which the adhesive member has been removed.

13. The adhesive member removal method according to claim 12, characterized in that: The cleaning step is performed by using at least one of a physical cleaning method, a dry cleaning method, and a wet cleaning method.

14. A polishing pad regeneration method, wherein the polishing pad is a worn polishing pad comprising a main pad member, a buffer pad member and an adhesive member, wherein a plurality of grooves having a depth less than a standard depth capable of performing a polishing process are formed on one surface of the main pad member, the buffer pad member is attached to the other surface of the main pad member, the adhesive member is attached to the buffer pad member and is composed of an adhesive and a film member, the polishing pad regeneration method comprising the following steps: chemically removing the bonding member from the cushion member; removing a damaged portion of the upper surface of the main cushion member; determining whether the thickness of the main cushion member is a thickness capable of reforming a groove having a depth greater than or equal to a standard depth; re-forming a groove on the upper surface of the main cushion member according to the determination result; and A new adhesive member is attached to the lower surface of the main pad member where the groove is formed.

15. The polishing pad regeneration method according to claim 14, characterized in that: The adhesive comprises a polyacrylic adhesive or an epoxy material. The film member comprises a polyethylene film, The adhesive member includes a double-sided tape formed by applying the adhesive on both sides of the film member.

16. The polishing pad regeneration method according to claim 14, characterized in that: The step of removing the bonding member includes immersing the polishing pad in an organic solvent at room temperature for 1 minute to 5 minutes.

17. The polishing pad regeneration method according to claim 16, characterized in that: The organic solvent consists of two polar organic solvents, a non-polar organic solvent and a non-ionic surfactant.

18. The polishing pad regeneration method according to claim 17, characterized in that: The contents of the two polar organic solvents are 10 to 30 wt % and 50 to 80 wt % respectively, the content of the non-polar organic solvent is 1 to 20 wt %, and the content of the nonionic surfactant is 0.1 to 1 wt %.

19. The polishing pad regeneration method according to claim 16, characterized in that: In the step of removing the bonding member, the polishing pad is immersed in the organic solvent so that the adhesive of the bonding member is substantially completely removed and the film member of the bonding member is separated from the cushion pad member.

20. The polishing pad regeneration method according to claim 16, characterized in that: The step of removing the bonding member comprises the following steps: immersing the polishing pad in the organic solvent so that the adhesive of the film member is partially removed so that the film member is in a state that can be easily removed from the cushion pad member, or removing the adhesive of the adhesive member only from the edge portion of the cushion pad member; and The film member is physically separated from the cushion member using a jig or cutting device.

21. The polishing pad regeneration method according to claim 16, characterized in that: The step of removing the bonding member further includes, after removing the bonding member from the cushion pad member by immersing the polishing pad in the organic solvent, immersing the polishing pad in an organic solvent to remove the adhesive remaining on the surface of the cushion pad member from which the bonding member has been removed.

22. The polishing pad regeneration method according to claim 14, characterized in that: In the step of removing the damaged portion of the main cushion member, the damaged portion of the main cushion member is removed in a manner that a portion of the groove remains, or is removed in a manner that the groove is completely removed.

23. The polishing pad regeneration method according to claim 14, characterized in that: In the judging step, if the thickness of the main pad component is such that a groove having a depth greater than or equal to the standard depth can be reformed, the reforming groove step includes the step of re-grooving the upper surface of the main pad component from which the damaged portion has been removed, so as to form a groove having a depth greater than or equal to the standard depth in the main pad component.

24. The polishing pad regeneration method according to claim 14, characterized in that: In the judging step, if the thickness of the pad member is not a thickness capable of reforming a groove having a depth greater than or equal to the standard depth, the reforming groove step includes the following steps: separating the cushion component from the main cushion component; attaching an auxiliary cushion member to the main cushion member from which the buffer cushion member has been removed to supplement the thickness of the main cushion member; By regrooving the upper surface of the main pad member from which the damaged portion has been removed, a groove having a depth greater than or equal to a standard depth is formed; and A new cushion member is attached to the lower surface of the auxiliary cushion member.

25. The polishing pad regeneration method according to claim 24, characterized in that: The main cushion component is made of polyurethane material. The auxiliary pad member is made of a polyurethane-based material having the same or similar coefficient of restitution characteristics as the pad member.

26. The polishing pad regeneration method according to claim 14, characterized in that: The method further includes performing a cleaning process before and after removing the bonding member to remove foreign matter accumulated on the upper surface of the main pad member of the worn polishing pad and the groove, The cleaning process is performed by using at least one of a physical cleaning method, a dry cleaning method, and a wet cleaning method.

27. A polishing pad regeneration method, wherein the polishing pad is a worn polishing pad comprising a main pad member, a buffer pad member and an adhesive member, wherein the main pad member is formed with a plurality of grooves having a depth less than a standard depth capable of performing a polishing process and has a thickness smaller than a thickness of grooves capable of being re-formed with a depth greater than or equal to the standard depth, the buffer pad member is attached to the main pad member, and the adhesive member is attached to the buffer pad member, wherein the polishing pad regeneration method comprises the following steps: separating the cushion component from the main cushion component; removing the bonding member from the separated cushion member; removing a damaged portion of an upper portion of the main cushion member; attaching an auxiliary cushion member to a lower surface of the main cushion member to form a regenerated cushion member consisting of the remaining main cushion member and the auxiliary cushion member; performing a regrooving operation on the regenerated pad member to re-form a groove having a depth greater than or equal to the standard depth; attaching a buffer pad member to the lower surface of the auxiliary pad member of the pad member in which the groove has been reformed; and A new bonding member is attached to the lower surface of the pad member where the groove is formed to regenerate the polishing pad.

28. The polishing pad regeneration method according to claim 27, characterized in that: The adhesive comprises a polyacrylic adhesive or an epoxy material. The film member comprises a polyethylene film, The adhesive member includes a double-sided tape formed by applying the adhesive on both sides of the film member.

29. The polishing pad regeneration method according to claim 27, characterized in that: The step of removing the bonding member includes immersing the polishing pad in an organic solvent at room temperature for 1 minute to 5 minutes.

30. The polishing pad regeneration method according to claim 29, characterized in that: The organic solvent consists of two polar organic solvents, a non-polar organic solvent and a non-ionic surfactant.

31. The polishing pad regeneration method according to claim 30, characterized in that: The contents of the two polar organic solvents are 10 to 30 wt % and 50 to 80 wt % respectively, the content of the non-polar organic solvent is 1 to 20 wt %, and the content of the nonionic surfactant is 0.1 to 1 wt %.

32. The polishing pad regeneration method according to claim 29, characterized in that: In the step of removing the bonding member, the polishing pad is immersed in the organic solvent so that the adhesive of the bonding member is substantially completely removed and the film member of the bonding member is separated from the cushion pad member.

33. The polishing pad regeneration method according to claim 29, characterized in that: The step of removing the bonding member comprises the following steps: immersing the polishing pad in the organic solvent so that the adhesive of the film member is partially removed so that the film member is in a state that can be easily removed from the cushion pad member, or removing the adhesive of the adhesive member only from the edge portion of the cushion pad member; and The film member is physically separated from the cushion member using a jig or cutting device.

34. The polishing pad regeneration method according to claim 29, characterized in that: The step of removing the bonding member further includes, after removing the bonding member from the cushion pad member by immersing the polishing pad in the organic solvent, immersing the polishing pad in an organic solvent to remove the adhesive remaining on the surface of the cushion pad member from which the bonding member has been removed.

35. The polishing pad regeneration method according to claim 27, characterized in that: In the step of removing the damaged portion of the main cushion member, the damaged portion of the main cushion member is removed in a manner that a portion of the groove remains, or is removed in a manner that the groove is completely removed.

36. The polishing pad regeneration method according to claim 27, characterized in that: In the judging step, if the thickness of the main pad component is such that a groove having a depth greater than or equal to the standard depth can be reformed, the reforming groove step includes the step of re-grooving the upper surface of the main pad component from which the damaged portion has been removed, so as to form a groove having a depth greater than or equal to the standard depth in the main pad component.

37. The polishing pad regeneration method according to claim 27, characterized in that: In the judging step, if the thickness of the pad member is not a thickness capable of reforming a groove having a depth greater than or equal to the standard depth, the reforming groove step includes the following steps: separating the cushion component from the main cushion component; attaching an auxiliary cushion member to the main cushion member from which the buffer cushion member has been removed to supplement the thickness of the main cushion member; By regrooving the upper surface of the main pad member from which the damaged portion has been removed, a groove having a depth greater than or equal to a standard depth is formed; and A cushion member is attached to the lower surface of the auxiliary cushion member.

38. The polishing pad regeneration method according to claim 37, characterized in that: The main cushion component is made of polyurethane material. The auxiliary pad member is made of a polyurethane-based material having the same or similar coefficient of restitution characteristics as the pad member.

39. The polishing pad regeneration method according to claim 27, characterized in that: The step of attaching the cushion member to the auxiliary cushion member includes attaching the cushion member to the auxiliary cushion member by reusing the cushion member separated from the main cushion member and from which an adhesive member has been removed or attaching a new cushion member to the auxiliary cushion member.

40. A polishing pad, characterized in that: The regeneration is carried out by using the polishing pad regeneration method according to claims 14 to 39.