A partitioned sputtering device and a method for controlling the magnetron sputtering atomic deposition direction

Abstract

The present invention belongs to the technical field of semiconductor devices, and particularly relates to a partitioned sputtering device and a control method for the magnetron sputtering atom deposition direction thereof. In the housing of the partitioned sputtering device of the present invention, a sealed cavity is provided. Inside the sealed cavity, a target and a base are provided. The base is connected to the housing and is used for mounting a substrate, and the target is used for sputtering target atoms onto the substrate. A magnetron assembly and a shielding member are also provided inside the sealed cavity. The magnetron assembly includes a first and a second magnetron assembly. The first or the second magnetron assembly can move relative to the target on a slide rail driven by a cylinder, so that the magnetron assembly can sputter only the central region of the target or simultaneously sputter the central region and the edge region of the target. The shielding member is used for shielding the edge region of the target, so that the magnetron assembly can sputter only the central region of the target or simultaneously sputter the central region and the edge region of the target. By performing two-step sputtering with the partitioned sputtering device of the present invention, holes can be filled with a high step coverage rate, and the flatness of the hole-filling surface can be increased.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and particularly relates to a partition sputtering device and a control method for the magnetron sputtering atomic deposition direction. Background Art

[0002] In integrated circuits, bipolar transistors and resistors are connected by aluminum film lines on SiO2. The process is as follows: device contact holes are etched on the SiO2 layer, an aluminum thin film is deposited, and an aluminum interconnect pattern is formed through photolithography and chemical etching. This simple and feasible aluminum interconnect technology has been successfully used in the research and production of integrated chips. With the increase in the device density and function of integrated circuits, more metal interconnections are required. In early CMOS devices, highly doped polysilicon lines were used as local interconnections, and then a double-layer interconnect was formed with metal aluminum or Al-Si on the local interconnections. In the double-layer interconnect technology, before depositing the second layer of metal, it is necessary to planarize the interlayer dielectric (ILD). The early planarization methods were resist etch-back and spin-on silica gel processes. This local planarization of the interlayer dielectric can improve the step coverage characteristics of the upper layer metal. However, if the third layer of metal interconnect lines is prepared, it is difficult to ensure its step coverage.

[0003] In order to form three or more metal interconnections, a global planarization process of the interlayer dielectric, that is, chemical mechanical polishing (CMP) technology, has been developed. With this process, the metal will be deposited on the surface of the completely flat dielectric. However, another problem has arisen, that is, the through holes in the interlayer dielectric after planarization are of different depths, and it is difficult to uniformly fill the deeper through holes with traditional PVD metal deposition technology, or there are surface depressions and insufficient flatness after filling.

[0004] Magnetron sputtering is one of the physical vapor deposition technologies. Generally, a permanent magnet or an electromagnet is placed on the back of the target to confine secondary electrons and enhance the plasma density. However, the magnetic field intensity distribution near the target surface is not uniform, which will lead to non-uniform plasma distribution. The non-uniform plasma distribution directly affects the sputtering uniformity, thereby affecting the target utilization rate. The plasma density distribution in a common magnetron sputtering device is strong in the center and weak at the edges. The higher the plasma density, the higher the ionization rate of metal atoms. This is crucial for the filling of holes or grooves because the step coverage of holes or grooves is positively correlated with the ionization rate of target metal atoms.

[0005] The main difficulties in filling holes with aluminum metal lie in the low step coverage rate, or low filling ability, where the micro-holes cannot be fully filled, or after the holes are fully filled with aluminum, there will still be relatively deep depressions of aluminum metal above the micro-holes. When the aluminum metal thin film crosses the steps on the substrate surface, it will deviate from the ideal situation, with the film being too thin or having cracks and voids. The step coverage rate directly affects the conductivity of the metal wiring. The top metal layer has a large current load and the wire dissipates a large amount of heat. If the step coverage rate is low, then the current density passing through the wire is high, and the wire is prone to fusing; at the same time, when the step coverage rate is low, the contact resistance will increase, and the delay and power consumption of the circuit will also increase accordingly. Moreover, the thickness of the metal coverage on the steps is uneven, and voids caused by electromigration are likely to occur. Summary of the Invention

[0006] The purpose of the present invention is to overcome the deficiencies existing in the prior art and provide a partitioned sputtering device and a control method for the atomic deposition direction of magnetron sputtering. The present invention uses a two-step sputtering method. First, the atoms in the central region of the target are sputtered, and the atoms are deposited on the wafer at a large incident angle, capable of filling the holes with a high step coverage rate. When the holes are filled with aluminum, a depression region close to the hole shape will be generated above the holes. Then, the atoms in the central region and the edge region of the target are sputtered. The atoms sputtered from the central region continue to fill the holes, and the sputtered atoms in the edge region can migrate to the hole sidewalls at a small incident angle, which can increase the flatness of the hole-filling surface.

[0007] To achieve the above technical objectives, the technical solutions adopted in the embodiments of the present invention are as follows:

[0008] In the first aspect, the embodiments of the present invention provide a partitioned sputtering device, including a housing. A first sealed cavity is provided inside the housing. A target and a base are provided inside the first sealed cavity. The base is connected to the housing and is used to mount the substrate. The target is used to sputter target atoms onto the substrate;

[0009] A magnetron assembly and a shielding member are further provided inside the first sealed cavity. The magnetron assembly is driven by a motor and includes a first magnetron assembly and a second magnetron assembly. The first magnetron assembly or the second magnetron assembly can move relative to the target on a slide rail under the drive of a cylinder, so that the magnetron assembly can only sputter the central region of the target or sputter the central region and the edge region of the target simultaneously;

[0010] The shielding member is used to shield the edge region of the target, so that the magnetron assembly can only sputter the central region of the target or sputter the central region and the edge region of the target simultaneously.

[0011] Further, the target includes a central region and an edge region, where d ≤ 1 / 2D, d is the diameter of the central region, and D is the diameter of the target;

[0012] An insulating block is arranged between the central region and the edge region. The insulating block is used to separate the central region and the edge region so that the power supply can supply power to the central region alone;

[0013] When the power supply supplies power to the central region of the target alone, it is denoted as working condition A;

[0014] When the power supply supplies power to both the central region and the edge region of the target simultaneously, it is denoted as working condition B.

[0015] Furthermore, both the first magnetron assembly and the second magnetron assembly are arranged on the back plate, and the back plate is connected to the housing;

[0016] When both the first magnetron assembly and the second magnetron assembly are located at the central position of the back plate, only the central region of the target is sputtered, denoted as working condition A; when the first magnetron assembly or the second magnetron assembly is located at the central position of the back plate and the second magnetron assembly or the first magnetron assembly is located at the edge of the back plate, the central region and the edge region of the target can be sputtered simultaneously, denoted as working condition B.

[0017] Furthermore, the shielding member can undergo reversible deformation in the vertical direction. When the shielding member is in the normal state, it can shield the edge region of the target, and the magnetron assembly only sputters the central region of the target, denoted as working condition A;

[0018] When the shielding member is compressed, it does not shield the edge region of the target, and the magnetron assembly sputters both the central region and the edge region of the target simultaneously, denoted as working condition B.

[0019] In a second aspect, an embodiment of the present invention provides a method for controlling the atomic deposition direction of magnetron sputtering, which is carried out on the partitioned sputtering device described in the first aspect, and includes the following steps:

[0020] Step S1, operating in working condition A: only sputtering the central region of the target;

[0021] Step S2, operating in working condition B: sputtering both the central region and the edge region of the target simultaneously;

[0022] Step S3, sequentially repeating steps S1 and S2 until the holes on the substrate are filled to form a relatively flat surface.

[0023] Furthermore, the selected diameter of the target is 320 - 322 mm, and the distance between the target and the substrate is 100 - 150 mm.

[0024] Furthermore, the parameters in working condition A are: the temperature of the substrate is set to 300 - 400 °C, and the chamber vacuum degree is maintained at 5.0×10 -8Below Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the reaction pressure in the chamber is 1.8 - 3.6 mTorr, the input power of the target is set to 2000 - 8000 W, and the sputtering time is 60 - 120 s.

[0025] Further, the parameters under working condition B are: the substrate temperature is set to 300 - 400 °C, the chamber vacuum is maintained below 5.0×10 -8 Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the reaction pressure in the chamber is 1.8 - 3.6 mTorr, the input power of the target is set to 10000 - 20000 W, and the sputtering time is 120 - 180 s.

[0026] The beneficial effects brought by the technical solution provided by the embodiments of the present invention are:

[0027] In the present invention, by first sputtering the atoms in the central region of the target, the atoms are deposited on the wafer at a large incident angle and can fill the holes with a high step coverage rate. Then, the atoms in the central region and the edge region of the target are sputtered simultaneously. The atoms sputtered from the central region continue to fill the holes, and the atoms sputtered from the edge region can be filled into the side walls of the holes at a small incident angle. After two-step sputtering, a full-fill state is obtained, forming a relatively flat surface. Description of the Drawings

[0028] Figure 1 It is a schematic diagram of the movement directions of the target atoms from different sputtering regions during the deposition on the wafer surface.

[0029] Among them, Figure 1 A is a schematic diagram of the movement direction of the target atoms in the central region during the deposition on the wafer surface;

[0030] Figure 1 B is a schematic diagram of the movement directions of the target atoms in the central region and the edge region during the simultaneous deposition on the wafer surface.

[0031] Figure 2 It is a schematic structural diagram of the partitioned sputtering device in Embodiment 1 of the present invention.

[0032] Figure 3 Is Figure 2 A schematic cross-sectional structure diagram of the target in the partitioned sputtering device.

[0033] Figure 4 It is a schematic structural diagram in Embodiment 2 where both the first magnetron component and the second magnetron component are located at the center position of the backplane.

[0034] Figure 5 It is a schematic structural diagram in Embodiment 2 where the first magnetron component is located at the edge position of the backplane and the second magnetron component is located at the center position of the backplane.

[0035] Figure 6 It is a schematic cross-sectional structure diagram when the shielding member is in the original state and shields the edge area of the target.

[0036] Figure 7 It is a schematic cross-sectional structure diagram when the shielding member is in the compressed state and does not shield the edge area of the target.

[0037] Figure 8 It is the SEM image of the aluminum thin film filling holes obtained in Example 2.

[0038] Figure 9 It is the SEM image of the aluminum thin film filling holes obtained in Comparative Example 1.

[0039] Figure 10 It is the SEM image of the aluminum thin film filling holes obtained in Comparative Example 2.

[0040] Explanation of reference numerals: 1 - target; 2 - magnetron assembly; 3 - shielding member; 4 - cylinder; 5 - slide rail; 6 - insulating block; 7 - back plate; 8 - motor; 21 - first magnetron assembly; 22 - second magnetron assembly; 23 - first pin; 24 - second pin; 11 - central area; 12 - edge area; 13 - first conductive ring; 14 - second conductive ring; 31 - elastic tube; 32 - second sealing cavity; 33 - opening. Detailed implementation manners

[0041] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by orientation words such as "inside, outside", "above, below", "left, right", etc. is usually based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description. Without contrary explanation, these orientation words do not indicate and imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation to the protection scope of the present invention.

[0042] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0043] Example 1

[0044] As Figure 2 and 3 shown, a partitioned sputtering device includes a housing. A first sealing cavity is arranged inside the housing. A target 1 and a base are arranged inside the first sealing cavity. The base is connected to the housing and is used to mount a substrate. The target 1 is used to sputter target atoms onto the substrate;

[0045] A magnetron assembly 2 and a shielding member 3 are further disposed in the first sealing cavity. The magnetron assembly 2 is driven by a motor 8 and includes a first magnetron assembly 21 and a second magnetron assembly 22. The first magnetron assembly 21 can move relative to the target 1 on the slide rail 5 under the drive of the cylinder 4, so that the magnetron assembly 2 can sputter the central region 11 of the target 1 or simultaneously sputter the central region 11 and the edge region 12 of the target 1.

[0046] The shielding member 3 is used to shield the edge region 12 of the target 1, so that the magnetron assembly 2 can only sputter the central region 11 of the target 1 or simultaneously sputter the central region 11 and the edge region 12 of the target 1.

[0047] The target 1 includes a central region 11 and an edge region 12, where d ≤ 1 / 2D, d is the diameter of the central region 11, and D is the diameter of the target 1.

[0048] An insulating block 6 is disposed between the central region 11 and the edge region 12. The insulating block 6 is used to separate the central region 11 and the edge region 12, so that the power supply can supply power to the central region 11 alone. Specifically, a first conductive ring 13 and a second conductive ring 14 are respectively disposed in the central region 11 and the edge region 12 of the target.

[0049] When the power supply supplies power to the central region 11 of the target 1 alone, the first conductive ring 13 conducts electricity, denoted as operating condition A.

[0050] When the power supply supplies power to both the central region 11 and the edge region 12 of the target 1 simultaneously, the first conductive ring 13 and the second conductive ring 14 conduct electricity simultaneously, denoted as operating condition B.

[0051] Both the first magnetron assembly 21 and the second magnetron assembly 22 are disposed on the back plate 7, and the back plate 7 is connected to the housing.

[0052] When both the first magnetron assembly 21 and the second magnetron assembly 22 are located at the center position of the back plate 7, only the central region 11 of the target 1 is sputtered, denoted as operating condition A; when the second magnetron assembly 22 is located at the center position of the back plate 7 and the first magnetron assembly 21 is located at the edge of the back plate 7, the central region 11 and the edge region 12 of the target 1 can be sputtered simultaneously, denoted as operating condition B.

[0053] Specifically, the cylinder 4 drives the magnetron assembly 2 to move along the slide rail 5. When the second magnetron assembly 22 moves to the edge position of the back plate 7, the first pin 23 and the second pin 24 respectively contact the first conductive ring 13 and the second conductive ring 14. The central region 11 of the target 1 is connected to the power supply. The central region 11 of the target 1 contacts the first conductive ring 13 through the second pin 24, and the electricity of the central region 11 of the target 1 is connected to the edge region 12 of the target 1 through the first pin 23, realizing that one power supply connects the central region 11 and the edge region 12.

[0054] The shielding member 3 can undergo reversible deformation in the vertical direction. When the shielding member 3 is in its original state, it can shield the edge region 12 of the target 1, and the magnetron assembly 2 only sputters the central region 11 of the target 1, which is denoted as operating condition A;

[0055] When the shielding member 3 is compressed, it does not shield the edge region 12 of the target 1, and the magnetron assembly 2 simultaneously sputters the central region 11 and the edge region 12 of the target 1, which is denoted as operating condition B.

[0056] Specifically, the shielding member 3 includes two elastic tubes 31 and a second sealing cavity 32 located therebetween. An opening 33 is provided at the bottom of the second sealing cavity 32. The vacuum pump is connected to the second sealing cavity 32 through the opening 33. When the vacuum pump operates to evacuate the second sealing cavity 32, after reaching a certain level, the elastic tubes 31 will be compressed, and the entire shielding member 3 will descend, not shielding the edge of the target 1. The magnetron assembly 2 can simultaneously sputter the central region 11 and the edge region 12 of the target 1. After the evacuation ends, air or other gases enter the second sealing cavity 32 from the opening 33, and the two elastic tubes 31 deform to the initial state. At this time, the shielding member 3 shields the edge region 12 of the target 1, and the magnetron assembly 2 only sputters the central region 11 of the target 1.

[0057] In addition, the present invention also provides a method for controlling the magnetron sputtering atomic deposition direction, which is carried out on the above-mentioned partitioned sputtering device and includes the following steps:

[0058] Step S1, operating condition A: only sputter the central region 11 of the target 1;

[0059] Step S2, operating condition B: simultaneously sputter the central region 11 and the edge region 12 of the target 1;

[0060] Step S3, sequentially repeat steps S1 and S2 until the holes on the substrate are filled to form a relatively flat surface.

[0061] The selected diameter of the target 1 is 320 - 322 mm, and the distance between the target 1 and the substrate is 100 - 150 mm.

[0062] The parameters in operating condition A are: the temperature of the substrate is set to 300 - 400 °C, the chamber vacuum degree is maintained below 5.0×10 - 8 Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the chamber reaction pressure is 1.8 - 3.6 mTorr, the target input power is set to 2000 - 8000 W, and the sputtering time is 60 - 120 s.

[0063] Further, the parameters under condition B are as follows: the substrate temperature is set to 300 - 400 °C, the chamber vacuum is maintained below 5.0×10 -8 Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the chamber reaction pressure is 1.8 - 3.6 mTorr, the target input power is set to 10000 - 20000 W, and the sputtering time is 120 - 180 s.

[0064] The following further elaborates on the control method for the magnetron sputtering atomic deposition direction of the present invention in combination with Examples 2 - 4.

[0065] Example 2

[0066] A control method for magnetron sputtering atomic deposition direction includes the following steps:

[0067] Step S1, set the chamber state to condition A: the cylinder 4 drives the first magnetron assembly 21 to move to the center position of the backplane 7. At this time, both the first magnetron assembly 21 and the second magnetron assembly 22 are located at the center position of the backplane 7. As Figure 4 shown, transfer the wafer into the magnetron sputtering vacuum chamber, set the substrate temperature to 400 °C, maintain the chamber vacuum below 5.0×10 -8 Torr, introduce argon gas with a flow rate of 50 sccm, the chamber reaction pressure is 3.0 mTorr, the target input power is set to 8000 W, the sputtering time is 120 s, and only sputter the central area 11 of the target 1;

[0068] Step S2, set the chamber state to condition B: the cylinder 4 drives the first magnetron assembly 21 to move to the edge position of the backplane 7. At this time, the first magnetron assembly 21 is located at the edge position of the backplane 7, while the second magnetron assembly 22 is located at the center position of the backplane 7. As Figure 5 shown, transfer the wafer into the magnetron sputtering vacuum chamber, set the substrate temperature to 400 °C, maintain the chamber vacuum below 5.0×10 -8 Torr, introduce argon gas with a flow rate of 50 sccm, the chamber reaction pressure is 3.0 mTorr, the target input power is set to 16000 W, the sputtering time is 180 s, and simultaneously sputter the central area 11 and the edge area 12 of the target 1;

[0069] The above control method is based on the SJI - SEMI Depomerits P188 Pro PVD platform, the target is an aluminum target with a purity of 99.999%, the target diameter is 320 mm, and the distance between the target and the wafer is 150 mm.

[0070] Observe the via - filling situation of the wafer cross - section under a scanning electron microscope, as Figure 8 shown. From Figure 8It can be seen that through the two-step sputtering method in the present invention, a full-fill state of the via holes can be achieved, with no voids or gaps in the holes and a relatively flat surface.

[0071] Example 3

[0072] A method for controlling the atomic deposition direction of magnetron sputtering includes the following steps:

[0073] Step S1: Set the cavity state to working condition A. The shielding member 3 shields the edge region 12 of the target 1. As shown, transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum degree below 5.0×10 Figure 6 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, and the sputtering time to 120 s, and only sputter the central region 11 of the target 1; -8

[0074] Step S2: Set the cavity state to working condition B. Use a vacuum pump to evacuate the second sealed cavity 32 of the shielding member 3 until the shielding member 3 descends to a position where it does not shield the edge of the target 1. As shown, transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum degree below 5.0×10 Figure 7 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 16000 W, and the sputtering time to 180 s, and sputter both the central region 11 and the edge region 12 of the target 1 simultaneously; -8

[0075] The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform. The target is an aluminum target with a purity of 99.999%, the target diameter is 320 mm, and the distance between the target and the wafer is 150 mm.

[0076] Example 4

[0077] A method for controlling the atomic deposition direction of magnetron sputtering includes the following steps:

[0078] Step S1: Set the cavity state to working condition A. Only energize the central region 11 of the target 1. Transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum degree below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, and the sputtering time to 120 s, and only sputter the central region 11 of the target 1;

[0079] ​​Step S2. Set the cavity state to operating condition B: Apply electricity to both the central region 11 and the edge region 12 of the target 1 simultaneously, transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum degree below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 16000 W, set the sputtering time to 180 s, and sputter both the central region 11 and the edge region 12 of the target 1 simultaneously;

[0080] The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform. The target used is an aluminum target with a purity of 99.999%, the target diameter is 320 mm, and the distance between the target and the wafer is 150 mm.

[0081] Comparative Example 1

[0082] A control method for the atomic deposition direction of magnetron sputtering includes the following steps:

[0083] Step S1. Set the cavity state to operating condition A: The cylinder 4 drives the first magnetron assembly 21 to move to the central position of the backplane 7. At this time, both the first magnetron assembly 21 and the second magnetron assembly 22 are located at the central position of the backplane 7. Transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum degree below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, set the sputtering time to 120 s, and only sputter the central region 11 of the target 1;

[0084] Step S2. Set the target input power to 16000 W, keep other conditions unchanged, and set the sputtering time to 180 s.

[0085] The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform, selects an aluminum target with a purity of 99.999%, the target diameter is 320 mm, and the distance between the target and the wafer is 150 mm.

[0086] Observe the via filling situation of the wafer cross-section under a scanning electron microscope, as shown in Figure 9. It can be Figure 9 seen that by the method of only sputtering the central region of the target, although a high step coverage of via filling can be achieved, there is still a certain degree of depression on the surface.

[0087] Comparative Example 2

[0088] A control method for the atomic deposition direction of magnetron sputtering includes the following steps:

[0089] Step S1: The cylinder 4 drives the first magnetron assembly 21 to move to the edge position of the backplane 7. At this time, the first magnetron assembly 21 is located at the edge position of the backplane 7, while the second magnetron assembly 22 is located at the center position of the backplane 7. The wafer is transferred into the magnetron sputtering vacuum chamber, the substrate temperature is set at 400 °C, the chamber vacuum is maintained below 5.0×10 -8 Torr, argon gas with a flow rate of 50 sccm is introduced, the chamber reaction pressure is 3.0 mTorr, the target input power is set at 8000 W, the sputtering time is 120 s, and the central region 11 and the edge region 12 of the target 1 are sputtered simultaneously;

[0090] Step S2: Set the target input power at 16000 W, keep other conditions unchanged, and the sputtering time is 180 s.

[0091] The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform and adopts the conventional sputtering method, that is, the method of sputtering the central and edge regions of the target simultaneously. An aluminum target with a target purity of 99.999% is selected, the target diameter is 320 - 322 mm, and the distance between the target and the wafer is 150 mm.

[0092] Observe the via filling situation of the wafer cross-section under a scanning electron microscope, as shown in Figure 10. From Figure 10 it can be seen that by adopting the conventional sputtering method, that is, the method of sputtering the central and edge regions of the target simultaneously, there are voids in the holes and the via filling fails.

[0093] As Figure 1 shown in A, in the present invention, by first sputtering the atoms in the central region of the target, the atoms are deposited on the wafer at a large incident angle and can fill the vias with a high step coverage rate. Then, as Figure 1 shown in B, the atoms in the central region and the edge region of the target are sputtered simultaneously. The atoms sputtered from the central region continue to fill the vias, and the atoms sputtered from the edge region can be filled into the sidewalls of the vias at a small incident angle. After two-step sputtering, a full-fill state is obtained, forming a relatively flat surface.

[0094] Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention rather than to limit them. Although the present invention has been described in detail with reference to the examples, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention, and they should all be covered within the scope of the claims of the present invention.

Claims

1. A partition sputtering device, characterized in that, It includes a housing, inside which a first sealing chamber is provided. Inside the first sealing chamber, a target (1) and a base seat are arranged. The base seat is connected to the housing and is used for installing a substrate, and the target (1) is used for sputtering target atoms onto the substrate. A magnetron assembly (2) and a shielding member (3) are further arranged in the first sealing chamber. The magnetron assembly (2) is driven by a motor (8) and includes a first magnetron assembly (21) and a second magnetron assembly (22). The first magnetron assembly (21) or the second magnetron assembly (22) can move relative to the target (1) on a slide rail (5) driven by a cylinder (4), so that the magnetron assembly (2) can only sputter the central region (11) of the target (1) or simultaneously sputter the central region (11) and the edge region (12) of the target (1). The shielding member (3) can undergo reversible deformation in the vertical direction. When the shielding member (3) is in a normal state, it can block the edge region (12) of the target (1), and the magnetron assembly (2) only sputters the central region (11) of the target (1), denoted as working condition A. When the shielding member (3) is compressed, it does not block the edge region (12) of the target (1), and the magnetron assembly (2) simultaneously sputters the central region (11) and the edge region (12) of the target (1), denoted as working condition B. The target (1) includes a central region (11) and an edge region (12), where d ≤ 1 / 2D, d is the diameter of the central region (11), and D is the diameter of the target (1). An insulating block (6) is arranged between the central region (11) and the edge region (12). The insulating block (6) is used to separate the central region (11) and the edge region (12), so that the power supply can supply power to the central region (11) alone. When the power supply supplies power to the central region (11) of the target (1) alone, it is denoted as working condition A. When the power supply supplies power to both the central region (11) and the edge region (12) of the target (1) simultaneously, it is denoted as working condition B.

2. The partition sputtering device according to claim 1, wherein Both the first magnetron assembly (21) and the second magnetron assembly (22) are arranged on a back plate (7), and the back plate (7) is connected to the housing. When both the first magnetron assembly (21) and the second magnetron assembly (22) are located at the central position of the back plate (7), only the central region (11) of the target (1) is sputtered, denoted as working condition A. When the first magnetron assembly (21) or the second magnetron assembly (22) is located at the central position of the back plate (7), and the second magnetron assembly (22) or the first magnetron assembly (21) is located at the edge of the back plate (7), the central region (11) and the edge region (12) of the target (1) can be sputtered simultaneously, denoted as working condition B.

3. A method for controlling the atomic deposition direction of magnetron sputtering, characterized in that, It is carried out on the partitioned sputtering device according to claim 1 or 2, including the following steps: Step S1, operating working condition A: only sputtering the central region (11) of the target (1). Step S2, operating condition B: Sputter the central region (11) and the edge region (12) of the target (1) simultaneously; Step S3, repeat Step S1 and Step S2 successively until the holes on the substrate are filled to form a relatively flat surface.

4. The method for controlling the magnetron sputtering atomic deposition direction according to claim 3, wherein The target (1) selected has a diameter of 320 - 322 mm, and the distance between the target (1) and the substrate is 100 - 150 mm.

5. The method for controlling the magnetron sputtering atomic deposition direction according to claim 3, characterized in that The parameters under condition A are as follows: the temperature of the substrate is set at 300 - 400 °C, the chamber vacuum is maintained below 5.0×10 -8 Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the chamber reaction pressure is 1.8 - 3.6 mTorr, the target input power is set at 2000 - 8000 W, and the sputtering time is 60 - 120 s.

6. The method for controlling the magnetron sputtering atomic deposition direction according to claim 3, characterized in that, The parameters under Condition B are as follows: the substrate temperature is set at 300 - 400 °C, the chamber vacuum is maintained below 5.0×10 -8 Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the chamber reaction pressure is 1.8 - 3.6 mTorr, the target input power is set at 10000 - 20000 W, and the sputtering time is 120 - 180 s.

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