Temperature control method, temperature control device and equipment for hot filament chemical vapor deposition equipment

Abstract

The invention relates to a temperature control device for hot filament chemical vapor deposition equipment, which comprises a main body part, at least one part of which is positioned in a heating cavity of the hot filament chemical vapor deposition equipment and is fixedly mounted on the top wall of the heating cavity through a connecting piece; the at least one detection part is arranged on the main body part, is positioned in the heating cavity, and can detect the temperature of the object to be subjected to temperature control so as to send a detection signal; the at least one monitoring part is arranged on the main body part, monitors the movement of the object to be subjected to temperature control, and can send a monitoring signal to the detection part at a preset time so as to enable the detection part to work; the at least one heating part is arranged in the heating cavity and is used for heating the object to be subjected to temperature control after receiving the heating signal; the temperature control part is arranged outside the heating cavity and is used for sending a heating signal to the heating part according to a detection signal from the detection part so as to enable the heating part to heat; and a signal transmission unit which is provided in the main body unit and which is capable of transmitting a signal between the respective parts. The temperature can be monitored in real time, and the accuracy of temperature control is ensured.

Description

Technical Field

[0001] The present application relates to the technical field of photovoltaic module transportation, and specifically provides a temperature control method and a temperature control device for a hot filament chemical vapor deposition device, and a hot filament chemical vapor deposition device using the same. Background Art

[0002] As a new type of large-scale coating device, a hot filament chemical vapor deposition (HoFCVD) device has the advantages of high film formation rate, good coating uniformity, and no ion damage, and has been applied to the coating field of crystalline silicon heterojunction solar cells. As a low-temperature coating process, precise control of the substrate temperature is particularly important for the crystalline silicon heterojunction route. Once the temperature exceeds 200°C, damage to the amorphous silicon film layer will occur. The current mainstream temperature measurement method for vertical carrier HoFCVD devices is infrared thermometry: a graphite sheet is attached to the back of the carrier, and by setting the corresponding emissivity (graphite sheet emissivity 0.85), the infrared thermometer receives the infrared radiation emitted by the graphite sheet, and after processing, the carrier temperature is obtained. This method has good accuracy when measuring high temperatures, but poor temperature measurement accuracy in the low-temperature range (30°C to 200°C).

[0003] In addition, HoFCVD devices belong to high-vacuum coating devices. The heating methods for this type of cavity usually include heating plate contact heating and hot filament radiation heating. For vertical carriers, the design of heating plate contact heating is difficult and it is hard to be used in the mass production of HoFCVD devices. Currently, there is no report on this solution. Therefore, vertical carrier HoFCVD devices often use hot filament radiation heating. This method heats the carrier by passing a large current through the hot filament, causing its temperature to rise rapidly and emit infrared radiation. Since the working principle of the infrared thermometer is to measure the temperature by receiving infrared radiation, this leads to: First, the infrared thermometer will not only receive the infrared radiation emitted by the graphite sheet during operation, but also collect a part of the infrared radiation emitted during hot filament heating, causing interference to the temperature measurement result; Second, the graphite sheet itself has a small heat capacity and fast heating rate, and cannot truly reflect the temperature of the carrier. The actual temperature difference from the carrier is 10 to 30°C; Third, the lower the temperature, the less infrared radiation, and the worse the measurement accuracy. The carrier temperature required for the heterojunction process route is ≤200°C. In this temperature range, it is difficult for the infrared thermometer to achieve relatively accurate temperature measurement, resulting in a deviation of 5 to 10°C; The superposition of the above three factors makes it difficult to achieve precise temperature control of the carrier, and the process repeatability is relatively poor. Summary of the Invention

[0004] To solve the problems existing in the above-mentioned prior art, the present application provides a temperature control device and a temperature control method for a hot wire chemical vapor deposition device, and a hot wire chemical vapor deposition device using the same, which can achieve the ability to monitor the temperature in real time and ensure the accuracy of temperature control, and ensure that there is no over-temperature during the process of the crystalline silicon heterojunction process by realizing precise temperature control.

[0005] In a first aspect, some embodiments of the present application provide a temperature control device for a hot wire chemical vapor deposition device, including: a main body part, at least a part of which is located in the heating cavity of the hot wire chemical vapor deposition device and is fixedly installed on the top wall of the heating cavity through a connecting piece; at least one detection part, which is arranged on the main body part and is located in the heating cavity, and can detect the temperature of the object to be temperature-controlled to send a detection signal; at least one monitoring part, which is arranged on the main body part and monitors the movement of the object to be temperature-controlled, and can send a monitoring signal to the detection part at a predetermined time to make the detection part work; at least one heating part, which is arranged in the heating cavity and heats the object to be temperature-controlled after receiving a heating signal; a temperature control part, which is arranged outside the heating cavity and sends the heating signal to the heating part according to the detection signal from the detection part to make the heating part heat; and a signal transmission part, which is arranged on the main body part and can transmit signals between various parts.

[0006] The embodiments of the present application can achieve the ability to monitor the temperature in real time and ensure the accuracy of temperature control.

[0007] In some embodiments, the signal transmission part includes at least one data line; the object to be temperature-controlled includes at least one carrier plate, and the carrier plate includes a front surface for placing a workpiece and a back surface opposite to the front surface.

[0008] In some embodiments, each detection part includes at least one magnetic force unit and at least one thermocouple unit. In the normal state when the detection part does not work, the thermocouple unit is adsorbed and held by the magnetic force unit; the magnetic force unit increases the repulsive force after receiving the monitoring signal from the monitoring part to eject a part of the thermocouple unit so that the thermocouple unit contacts a predetermined area on the front surface of the object to be temperature-controlled; the thermocouple unit feeds back the temperature of the object to be temperature-controlled detected in real time by the detection part to the temperature control part.

[0009] In some embodiments, the heating part includes at least one hot wire, and the hot wire is arranged at a position close to the back surface of the carrier plate.

[0010] In some embodiments, there are multiple detection parts, and the detection parts measure the temperatures of multiple parts of the object to be temperature-controlled and take the average value of the obtained temperatures of the multiple parts as the temperature of the object to be temperature-controlled.

[0011] In some embodiments, there are multiple monitoring units, and the monitoring units predict the movement trajectory of the object to be temperature-controlled and activate the heating unit in advance before the object to be temperature-controlled reaches a predetermined position.

[0012] In some embodiments, there are multiple heating units, and the heating units heat multiple parts of the object to be temperature-controlled.

[0013] In a second aspect, some embodiments of the present application provide a temperature control method for a hot wire chemical vapor deposition device, using the above temperature control device; the temperature control method includes the following steps: the monitoring unit monitors the movement of the object to be temperature-controlled and sends a monitoring signal to the detection unit at a predetermined time. After receiving the monitoring signal, the detection unit operates and contacts a predetermined area on the front surface of the object to be temperature-controlled to detect the temperature; the heating unit is turned on for heating, and the temperature of the object to be temperature-controlled detected in real time by the detection unit is fed back to the temperature control unit; in a state where the object to be temperature-controlled is heated to a target temperature, the heating unit is turned off and the signal of the heating unit is fed back to the detection unit so that the detection unit operates to release the contact with the object to be temperature-controlled.

[0014] The embodiments of the present application can achieve the ability to monitor the temperature in real time and ensure the accuracy of temperature control.

[0015] In some embodiments, it further includes the following steps: after the detection unit releases the contact with the object to be temperature-controlled, the signal of the detection unit is fed back to the signal control end, and the object to be temperature-controlled leaves the heating chamber of the hot wire chemical vapor deposition device to complete heating.

[0016] In a third aspect, some embodiments of the present application provide a hot wire chemical vapor deposition device, including the above temperature control device.

[0017] The present application provides a temperature control device and a temperature control method for a hot wire chemical vapor deposition device and a hot wire chemical vapor deposition device using the same. It mainly has the following advantages: using a contact thermocouple to monitor the temperature of the carrier plate in real time and feed it back to the PID temperature control module, achieving the ability to monitor the temperature in real time, ensuring the accuracy of temperature control, and being able to achieve precise temperature control in the temperature range of 30°C to 200°C, ensuring that there is no over-temperature during the process of the crystalline silicon heterojunction process. Description of the Drawings

[0018] The drawings here are incorporated into the specification and constitute a part of this specification, showing embodiments consistent with the present application and used together with the specification to explain the principles of the present application.

[0019] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0020] Figure 1 It is a schematic diagram of a temperature control device for a hot wire chemical vapor deposition apparatus related to the present application;

[0021] Figure 2 It is a schematic diagram of the carrier plate position monitoring;

[0022] Figure 3 It is a flowchart of a temperature control method for a hot wire chemical vapor deposition apparatus related to the present application.

[0023] In the figure: 1 - top wall, 2 - data line, 3 - connecting member, 4 - magnetic force unit, 5 - thermocouple unit, 6 - carrier plate, 7 - hot wire, 8 - temperature control module, 9 - signal control end, 10 - signal detection sensor, 100 - main body part. Detailed implementation manners

[0024] In order to be able to more clearly understand the above-mentioned objects, features and advantages of the present application, the embodiments of the present application will be further described below. It should be noted that, without conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0025] Many specific details are set forth in the following description in order to fully understand the present application, but the present application can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present application, rather than all the embodiments.

[0026] At least in order to achieve the ability to monitor temperature in real time and ensure the accuracy of temperature control, an embodiment of the present application provides a temperature control device for a hot wire chemical vapor deposition device, including: a main body part, at least a part of which is located in the heating chamber of the hot wire chemical vapor deposition device and is fixedly installed on the top wall of the heating chamber through a connecting piece; at least one detection part, which is arranged on the main body part and is located in the heating chamber, and can detect the temperature of the object to be temperature-controlled to send a detection signal; at least one monitoring part, which is arranged on the main body part and monitors the movement of the object to be temperature-controlled, and can send a monitoring signal to the detection part at a predetermined time to make the detection part work; at least one heating part, which is arranged in the heating chamber and heats the object to be temperature-controlled after receiving a heating signal; a temperature control part, which is arranged outside the heating chamber and sends the heating signal to the heating part according to the detection signal from the detection part to make the heating part perform heating; and a signal transmission part, which is arranged on the main body part and can transmit signals between various parts.

[0027] It can be understood that the temperature control device for a hot wire chemical vapor deposition device provided by the embodiment of the present application can effectively improve the technical defects existing in the temperature control device using related technologies.

[0028] The following combines Figure 1 to exemplarily elaborate on the above temperature control device and exemplarily elaborate on the structure of the temperature control device. It should be noted that those skilled in the art can design a temperature control device different from Figure 1 based on the concept of the above temperature control device according to specific needs.

[0029] First, briefly introduce the Figure 1 corresponding components or units in combination with the reference numerals.

[0030] Reference numeral 1 is used to represent the top wall, which is the top wall of the heating chamber of the hot wire chemical vapor deposition device; reference numeral 2 is used to represent the data line; reference numeral 3 is used to represent the connecting piece, which is, for example, a vacuum flange; reference numeral 4 is used to represent the magnetic force unit; reference numeral 5 is used to represent the thermocouple unit; reference numeral 6 is used to represent the carrier plate; reference numeral 7 is used to represent the hot wire, which is used to heat the carrier plate; reference numeral 8 is used for the temperature control module, which is used to receive the temperature data fed back by the thermocouple unit and feedback the heating time through the internal data curve; reference numeral 100 is used to represent the main body part, which is the main body part of the temperature control device for the hot wire chemical vapor deposition device.

[0031] Secondly, exemplarily elaborate on the temperature control device of some embodiments of the present application in combination with the above reference numerals.

[0032] Figure 1 This is a schematic diagram of the temperature control device for the hot wire chemical vapor deposition device involved in the present application.

[0033] As shown Figure 1 Figure 1 As shown in the figure, a temperature control device for a hot wire chemical vapor deposition apparatus provided by an embodiment of the present application includes: a main body portion 100, at least a part of which is located in a heating chamber of the hot wire chemical vapor deposition apparatus and is fixedly installed on a top wall 1 of the heating chamber through a connecting member 3; at least one detection portion, which is disposed on the main body portion 100 and is located in the heating chamber, and is capable of detecting the temperature of an object to be temperature-controlled to send a detection signal; at least one monitoring portion, which is disposed on the main body portion 100 and monitors the movement of the object to be temperature-controlled, and is capable of sending a monitoring signal to the detection portion at a predetermined timing to cause the detection portion to operate; at least one heating portion, which is disposed in the heating chamber and heats the object to be temperature-controlled after receiving a heating signal; a temperature control portion, which is disposed outside the heating chamber and sends a heating signal to the heating portion according to a detection signal from the detection portion to cause the heating portion to perform heating; and a signal transmission portion, which is disposed on the main body portion 100 and is capable of transmitting signals between various portions.

[0034]

[0034] Here, the detection portion may be one or more. For example, a plurality of detection portions (the number is, for example, 4, 5, 6, etc.) may be provided to measure the temperatures of multiple portions of the object to be temperature-controlled and then take the average of the obtained temperatures of the multiple portions to be able to more accurately measure the temperature of the object to be temperature-controlled. The monitoring portion may be one or more. For example, a plurality of monitoring portions (the number is, for example, 3, 4, 5, 6, etc.) may be provided to predict the movement trajectory of the object to be temperature-controlled and start the heating portion in advance before the object to be temperature-controlled reaches a predetermined position to be able to eliminate the response time difference of the heating portion and heat the object to be temperature-controlled faster and better. The heating portion may be one or more. For example, a plurality of heating portions (the number is, for example, 4, 5, 6, etc.) may be provided to heat multiple portions of the object to be temperature-controlled to heat the object to be temperature-controlled more evenly and quickly. The temperature control portion may be, for example, a temperature control module 8. For example, a PID temperature control module. The principle of the PID temperature control module is as follows: The PID temperature control module receives the initial temperature fed back after the thermocouple unit 5 contacts the carrier plate 6. If the temperature < the target temperature, a signal is given to the heating wire to turn on the heating wire for heating. After the temperature of the carrier plate 6 rises to the target temperature, a signal is given to the heating wire to turn off the heating wire and stop heating. The PID temperature control module and the signal control end 9 are both integrated on the computer side. In addition, the predetermined timing may refer to the moment when the object to be temperature-controlled reaches a predetermined position (for example, the heating position where the object to be temperature-controlled is heated, a position at a certain distance from the heating position, etc.).

[0035] Furthermore, the hot wire chemical vapor deposition apparatus may adopt a known commercially available apparatus.

[0036] As Figure 1As shown, the signal transmission unit includes at least one data line 2; the object to be temperature-controlled includes at least one carrier plate 6, and the carrier plate 6 includes a front side for placing the workpiece and a back side opposite to the front side.

[0037] Here, the workpiece is, for example, a solar cell, and the object to be temperature-controlled is, for example, one or more carrier plates for placing solar cells. However, the workpiece is not limited to solar cells and can also be other thin wafers (such as silicon wafers). Although the signal transmission unit uses a data line to transmit signals, the signal transmission unit can also use a wireless method to transmit signals. Furthermore, the monitoring unit can be a carrier plate position monitor.

[0038] As Figure 1 shown, each detection unit includes at least one magnetic force unit 4 and at least one thermocouple unit 5. In the normal state when the detection unit is not working, the thermocouple unit 5 is adsorbed and held by the magnetic force unit 4; after the magnetic force unit 4 receives the monitoring signal from the monitoring unit, the repulsive force is increased to eject a part of the thermocouple unit 5 so that the thermocouple unit 5 contacts a predetermined area on the front side of the object to be temperature-controlled; the thermocouple unit 5 feeds back the temperature of the object to be temperature-controlled detected in real time by the detection unit to the temperature control unit, that is, the temperature control module 8.

[0039] Here, the predetermined area is, for example, the area on the front side of the object to be temperature-controlled where the workpiece is not placed (that is, for example, the non-silicon area of the carrier plate).

[0040] As Figure 1 shown, the heating unit includes at least one heating wire 7, and the heating wire 7 is arranged at a position close to the back side of the carrier plate 6. Here, although Figure 1 the heating wire provided for one carrier plate is one, those skilled in the art know that the heating wire provided for one carrier plate can of course also be multiple (such as 2, 3, 4, etc.) to improve the heating efficiency.

[0041] As Figure 1-2 shown, the temperature control module 8 and the signal control terminal 9 have parallel functions and are both integrated on the computer side through the data line 2 to process the received electrical signals. The temperature control module 8 is used to control the heating of the carrier plate 6. The signal control terminal 9 is used to control the carrier plate 6 to stop in place and, after the heating of the carrier plate 6 ends, start running to the next cavity. As Figure 2 shown, there are two signal detection sensors 10 on both sides of the cavity wall, which are used to monitor whether the carrier plate 6 has moved in place. When both signal detection sensors 10 sense the carrier plate 6, it indicates that the carrier plate 6 has moved in place, and the signal is transmitted to the signal control terminal 9 to stop the movement of the carrier plate 6. When the heating ends and the thermocouple unit 5 resets, the signal is transmitted to the signal control terminal 9 to make the carrier plate 6 move to the next cavity.

[0042] Figure 3 is a flowchart of the temperature control method for the hot wire chemical vapor deposition equipment involved in this application. AsFigure 3 As shown, the temperature control method for a hot wire chemical vapor deposition device according to the present application uses the above temperature control device; the temperature control method includes the following steps: the monitoring unit monitors the movement of the object to be temperature-controlled and sends a monitoring signal to the detection unit at a predetermined timing, and the detection unit operates after receiving the monitoring signal and contacts a predetermined area on the front surface of the object to be temperature-controlled to detect the temperature (S10); the heating unit is turned on for heating, and the detection unit immediately feeds back the detected temperature of the object to be temperature-controlled to the temperature control unit in real time (S11); in the state where the object to be temperature-controlled is heated to the target temperature, the heating unit is turned off and the signal of the heating unit is fed back to the detection unit to enable the detection unit to operate and release the contact with the object to be temperature-controlled (S12).

[0043] Here, the target temperature is the temperature that the object to be temperature-controlled is expected to reach.

[0044] In addition, the temperature control method for a hot wire chemical vapor deposition device further includes the following steps: after the detection unit releases the contact with the object to be temperature-controlled, the signal of the detection unit is fed back to the signal control end, and the object to be temperature-controlled leaves the heating chamber of the hot wire chemical vapor deposition device, completing the heating.

[0045] Furthermore, the present application relates to a hot wire chemical vapor deposition device, which includes the above temperature control device. The embodiments of the present application provide a temperature control device and a temperature control method for a hot wire chemical vapor deposition device and a hot wire chemical vapor deposition device using the same. It mainly has the following advantages: using a contact thermocouple to monitor the temperature of the carrier plate in real time and feeding it back to the PID temperature control module, achieving the ability to monitor the temperature in real time, ensuring the accuracy of temperature control, and being able to achieve precise temperature control in the temperature range of 30°C to 200°C, ensuring that there will be no over-temperature during the process of the crystalline silicon heterojunction process.

[0046] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise stated, the meaning of "a plurality" is two or more.

[0047] In the description of the present application, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0048] For those of ordinary skill in the art, any modifications and changes made according to the above embodiments of the present application should be included within the protection scope of the present application without departing from the purpose of the present application.

Claims

1. A temperature control device for hot wire chemical vapor deposition equipment, characterized in that: include: A main body (100), at least a portion of which is located in a heating chamber of the hot wire chemical vapor deposition device and is fixedly mounted on a top wall (1) of the heating chamber via a connecting member (3); At least one detection unit, which is arranged on the main body (100) and located in the heating chamber, and is capable of detecting the temperature of the object to be temperature-controlled to send a detection signal; at least one monitoring unit, which is arranged on the main body (100) and monitors the movement of the object to be temperature-controlled, and is capable of sending a monitoring signal to the detection unit at a predetermined time to enable the detection unit to operate; at least one heating unit, which is disposed in the heating chamber and heats the object to be temperature-controlled after receiving a heating signal; a temperature control unit, which is disposed outside the heating chamber and sends the heating signal to the heating unit according to the detection signal from the detection unit to enable the heating unit to heat; and A signal transmission part is arranged on the main body (100) and is capable of transmitting signals between various parts.

2. The temperature control device for hot wire chemical vapor deposition equipment according to claim 1, characterized in that: The signal transmission unit comprises at least one data line (2); The object to be temperature-controlled comprises at least one carrier plate (6), and the carrier plate (6) comprises a front side for placing the workpiece and a back side opposite to the front side.

3. The temperature control device for hot wire chemical vapor deposition equipment according to claim 1, characterized in that: Each of the detection parts comprises at least one magnetic unit (4) and at least one thermocouple unit (5), and in a normal state when the detection part is not working, the thermocouple unit (5) is adsorbed and held on the magnetic unit (4); After receiving the monitoring signal from the monitoring unit, the magnetic unit (4) increases the repulsive force to eject a portion of the thermocouple unit (5) so that the thermocouple unit (5) contacts a predetermined area on the front side of the object to be temperature-controlled; The thermocouple unit (5) feeds back the temperature of the object to be temperature-controlled detected in real time by the detection unit to the temperature control unit.

4. The temperature control device for hot wire chemical vapor deposition equipment according to claim 2, characterized in that: The heating portion comprises at least one hot wire (7), and the hot wire (7) is arranged at a position close to the back side of the carrier plate (6).

5. The temperature control device for hot wire chemical vapor deposition equipment according to claim 1, characterized in that: There are multiple detection units, and each detection unit measures the temperatures of multiple parts of the object to be temperature-controlled and takes an average value of the temperatures of the multiple parts as the temperature of the object to be temperature-controlled.

6. The temperature control device for hot wire chemical vapor deposition equipment according to claim 1, characterized in that: There are multiple monitoring units, and each monitoring unit predicts the movement trajectory of the object to be temperature-controlled and starts the heating unit in advance before the object to be temperature-controlled reaches a predetermined position.

7. The temperature control device for hot wire chemical vapor deposition equipment according to claim 1, characterized in that: There are multiple heating parts, and the heating parts heat multiple parts of the object to be temperature-controlled.

8. A temperature control method for hot wire chemical vapor deposition equipment, characterized in that: Use the temperature control device described in any one of claims 1 to 7; The temperature control method The following steps are involved: The monitoring unit monitors the movement of the object to be temperature-controlled and sends a monitoring signal to the detection unit at a predetermined time. After receiving the monitoring signal, the detection unit works and contacts a predetermined area on the front of the object to be temperature-controlled to detect the temperature. Turning on the heating unit to heat, and feeding back the detected temperature of the object to be temperature-controlled to the temperature control unit in real time through the detection unit; When the object to be temperature-controlled is heated to the target temperature, the heating unit is turned off and a signal of the heating unit is fed back to the detection unit so that the detection unit operates and releases the contact with the object to be temperature-controlled.

9. The temperature control method for hot wire chemical vapor deposition equipment according to claim 8, characterized in that: The following steps are also included: After the detection part releases the contact with the object to be temperature-controlled, the signal of the detection part is fed back to the signal control end, and the object to be temperature-controlled leaves the heating chamber of the hot wire chemical vapor deposition device, and the heating is completed.

10. A hot wire chemical vapor deposition device, characterized in that: The invention comprises the temperature control device according to any one of claims 1 to 7.

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