Small spectrum detection system based on infrared spectrum absorption array

Abstract

The invention discloses a small spectrum detection system based on an infrared spectrum absorption array, and relates to a spectrum absorption and spectrum detection system. The invention aims to solve the problems of overlarge size, overhigh manufacturing cost and difficulty in portability of the existing spectrum sensor. The device comprises a substrate layer, an electrode material layer, a metal reflecting layer and a metal dielectric layer, the electrode material layer comprises four pairs of electrodes, and each pair of electrodes is composed of a long electrode, a short electrode and two metal plates; the metal reflecting layer comprises a metal reflecting film in the middle and four pairs of electrode metal on the periphery, and each pair of electrode metal is composed of two metal plates; the surface of the metal dielectric layer comprises a first absorption array, a second absorption array, a third absorption array, a fourth absorption array and four pairs of electrode metal around the first absorption array, the second absorption array, the third absorption array and the fourth absorption array, and each pair of electrode metal is composed of two metal plates.

Description

Technical Field

[0001] The present invention relates to a spectral absorption and spectral detection system, belonging to the technical field of spectral detection. Background Art

[0002] Spectral detection technology has wide applications in many fields such as environmental monitoring, biomedical analysis, food safety detection, etc. Its core lies in the high-precision analysis of the spectral information of incident light. Traditional spectral sensing systems mainly rely on spectral separation elements such as gratings, prisms, or interference filters. However, such systems usually involve relatively large optical components and require high-precision mechanical adjustment to ensure optical alignment, resulting in high system complexity, high manufacturing costs, and limitations in portable and low-cost application scenarios. In addition, traditional spectral sensors usually rely on external optical systems for spectral decomposition, which not only increases the device power consumption but also reduces the system integration, making it difficult to meet the current requirements of miniaturization, low cost, and high-sensitivity detection. Therefore, there is an urgent need for a spectral detection system that can achieve high integration, miniaturization, and low cost while maintaining high spectral selectivity and high sensitivity to meet the needs of portable applications and promote the further development of spectral detection technology. Summary of the Invention

[0003] In order to solve the problems of large detection volume and high detection cost of existing spectral detection systems, the present invention further provides a small spectral detection system based on an infrared spectral absorption array.

[0004] The technical solution adopted by the present invention to solve the above problems is as follows: The present invention includes a metal dielectric layer, a metal reflection layer, an electrode material layer, and a substrate layer;

[0005] Furthermore, on the upper surface of the metal dielectric layer, there are provided a first absorption array, a second absorption array, a third absorption array, a fourth absorption array, a first absorption positive electrode of the dielectric layer, a second absorption positive electrode of the dielectric layer, a second absorption negative electrode of the dielectric layer (, a third absorption negative electrode of the dielectric layer, a third absorption positive electrode of the dielectric layer, a fourth absorption positive electrode of the dielectric layer, a fourth absorption negative electrode of the dielectric layer, and a first absorption negative electrode of the dielectric layer;

[0006] Furthermore, the first absorption positive electrode of the dielectric layer and the first absorption negative electrode of the dielectric layer are respectively provided on the upper side and the left side of the first absorption array, the second absorption positive electrode of the dielectric layer and the second absorption negative electrode of the dielectric layer are respectively provided on the upper side and the right side of the second absorption array, the third absorption positive electrode of the dielectric layer and the third absorption negative electrode of the dielectric layer are respectively provided on the lower side and the right side of the third absorption array, and the fourth absorption positive electrode of the dielectric layer and the fourth absorption negative electrode of the dielectric layer are respectively provided on the lower side and the left side of the fourth absorption array.

[0007] Furthermore, a metal reflective thin film is provided on the metal reflective layer, including the first absorption positive electrode of the metal reflective layer, the second absorption positive electrode of the metal reflective layer, the second absorption negative electrode of the metal reflective layer, the third absorption negative electrode of the metal reflective layer, the third absorption positive electrode of the metal reflective layer, the fourth absorption positive electrode of the metal reflective layer, the fourth absorption negative electrode of the metal reflective layer, and the first absorption negative electrode of the metal reflective layer;

[0008] Furthermore, the metal reflective thin film is located in the middle of the upper surface of the metal reflective layer. The first absorption positive electrode of the metal reflective layer and the second absorption positive electrode of the metal reflective layer are arranged side by side above the metal reflective thin film. The second absorption negative electrode of the metal reflective layer and the third absorption negative electrode of the metal reflective layer are vertically arranged on the right side of the metal reflective thin film. The third absorption positive electrode of the metal reflective layer and the fourth absorption positive electrode of the metal reflective layer are arranged side by side below the metal reflective thin film. The fourth absorption negative electrode of the metal reflective layer and the first absorption negative electrode of the metal reflective layer are vertically arranged on the left side of the metal reflective thin film.

[0009] Furthermore, on the electrode material layer, there are the first absorption positive electrode of the electrode material layer, the second absorption positive electrode of the electrode material layer, the second absorption negative electrode of the electrode material layer, the third absorption negative electrode of the electrode material layer, the third absorption positive electrode of the electrode material layer, the fourth absorption positive electrode of the electrode material layer, the fourth absorption negative electrode of the electrode material layer, the first absorption negative electrode of the electrode material layer, the first absorption long electrode, the first absorption short electrode, the second absorption long electrode, the second absorption short electrode, the third absorption long electrode, the third absorption short electrode, the fourth absorption long electrode, and the fourth absorption short electrode;

[0010] Furthermore, the first absorption positive electrode of the electrode material layer is connected to the first absorption long electrode, the first absorption negative electrode of the electrode material layer is connected to the first absorption short electrode, the second absorption positive electrode of the electrode material layer is connected to the second absorption long electrode, the second absorption negative electrode of the electrode material layer is connected to the second absorption short electrode, the third absorption positive electrode of the electrode material layer is connected to the third absorption long electrode, the third absorption negative electrode of the electrode material layer is connected to the third absorption short electrode, the fourth absorption positive electrode of the electrode material layer is connected to the fourth absorption long electrode, and the fourth absorption negative electrode of the electrode material layer is connected to the fourth absorption short electrode.

[0011] Furthermore, the first absorption positive electrode of the dielectric layer is connected to the first absorption positive electrode of the electrode material layer through the first absorption positive electrode of the metal reflection layer. The first absorption negative electrode of the dielectric layer is connected to the first absorption negative electrode of the electrode material layer through the first absorption negative electrode of the metal reflection layer. The second absorption positive electrode of the dielectric layer is connected to the second absorption positive electrode of the electrode material layer through the second absorption positive electrode of the metal reflection layer. The second absorption negative electrode of the dielectric layer is connected to the first absorption negative electrode of the electrode material layer through the second absorption negative electrode of the metal reflection layer. The third absorption positive electrode of the dielectric layer is connected to the third absorption positive electrode of the electrode material layer through the third absorption positive electrode of the metal reflection layer. The third absorption negative electrode of the dielectric layer is connected to the third absorption negative electrode of the electrode material layer through the third absorption negative electrode of the metal reflection layer. The fourth absorption positive electrode of the dielectric layer is connected to the fourth absorption positive electrode of the electrode material layer through the fourth absorption positive electrode of the metal reflection layer. The fourth absorption negative electrode of the dielectric layer is connected to the fourth absorption negative electrode of the electrode material layer through the fourth absorption negative electrode of the metal reflection layer.

[0012] The beneficial effects of the present invention are as follows:

[0013] 1. Compared with the prior art, the present invention adopts a detection scheme based on an infrared spectral absorption array, uses micro-nano structures to achieve spectral selective absorption, and does not require traditional gratings or interference filters, greatly reducing the system volume.

[0014] 2. Compared with traditional spectral detection systems, the present invention adopts a metal-dielectric-metal (MIM) structure and an optimized electrode layout, and is compatible with MEMS processes, reducing the need for high-precision mechanical adjustment and complex optical devices, thus simplifying the manufacturing process, reducing production costs, and improving the manufacturability and market competitiveness of the device.

[0015] 3. By precisely designing the spectral absorption array, the present invention realizes efficient absorption of specific wavelengths, improves the detection signal intensity, enhances the spectral resolution and sensitivity of the system, and can meet the requirements of high-precision spectral detection.

[0016] 4. The present invention can be integrated into small portable devices, is suitable for low-power application scenarios such as mobile environmental monitoring, wearable biosensing, and on-site spectral analysis, expanding the application range of spectral detection technology. Description of the Drawings

[0017] Figure 1 is a schematic structural diagram of the small spectral detector of the present invention;

[0018] Figure 2 is a schematic structural diagram of the metal dielectric layer;

[0019] Figure 3 is a schematic structural diagram of the metal reflection layer;

[0020] Figure 4It is a schematic diagram of the electrode material layer structure;

[0021] Figure 5 It is a block diagram of the small spectral detector and the small spectral detection system of the present invention. Specific embodiments

[0022] Specific embodiment 1: As Figure 1 shown, a small spectral monitoring system based on an infrared spectral absorption array, characterized by comprising a metal dielectric layer 1, a metal reflection layer 2, an electrode material layer 3, and a substrate layer 4;

[0023] On the upper surface of the metal dielectric layer 1, there are a first absorption array 1-9, a second absorption array 1-10, a third absorption array 1-11, and a fourth absorption array 1-12; the first absorption array 1-9, the second absorption array 1-10, the third absorption array 1-11, and the fourth absorption array 1-12 are arranged side by side in pairs and sequentially from top to bottom on the surface of the metal dielectric layer 1. Among them, the first absorption array 1-9, the second absorption array 1-10, the third absorption array 1-11, and the fourth absorption array 1-12 have an infrared absorption characteristic of more than 90% of the infrared energy in a specific narrow band.

[0024] Specific embodiment 2: As Figure 2 shown, on the basis of specific embodiment 1, on the metal dielectric layer 1, there are a dielectric layer first absorption positive electrode 1-1, a dielectric layer second absorption positive electrode 1-2, a dielectric layer second absorption negative electrode 1-3, a dielectric layer third absorption negative electrode 1-4, a dielectric layer third absorption positive electrode 1-5, a dielectric layer fourth absorption positive electrode 1-6, a dielectric layer fourth absorption negative electrode 1-7, and a dielectric layer first absorption negative electrode 1-8;

[0025] The dielectric layer first absorption positive electrode 1-1 and the dielectric layer first absorption negative electrode 1-8 are respectively arranged on the upper side and the left side of the first absorption array 1-9, the dielectric layer second absorption positive electrode 1-2 and the dielectric layer second absorption negative electrode 1-3 are respectively arranged on the upper side and the right side of the second absorption array 1-10, the dielectric layer third absorption positive electrode 1-5 and the dielectric layer third absorption negative electrode 1-4 are respectively arranged on the lower side and the right side of the third absorption array 1-11, and the dielectric layer fourth absorption positive electrode 1-6 and the dielectric layer fourth absorption negative electrode 1-7 are respectively arranged on the lower side and the left side of the fourth absorption array 1-12.

[0026] Specific embodiment 3: As Figure 3As shown, on the basis of the first specific implementation manner, a metal reflection thin film 2-9 is provided on the metal reflection layer 2, including a first absorption positive electrode 2-1 of the metal reflection layer, a second absorption positive electrode 2-2 of the metal reflection layer, a second absorption negative electrode 2-3 of the metal reflection layer, a third absorption negative electrode 2-4 of the metal reflection layer, a third absorption positive electrode 2-5 of the metal reflection layer, a fourth absorption positive electrode 2-6 of the metal reflection layer, a fourth absorption negative electrode 2-7 of the metal reflection layer, and a first absorption negative electrode 2-8 of the metal reflection layer;

[0027] The metal reflection thin film 2-9 is located in the middle of the upper surface of the metal reflection layer 2. The first absorption positive electrode 2-1 and the second absorption positive electrode 2-2 of the metal reflection layer are arranged side by side above the metal reflection thin film 2-9. The second absorption negative electrode 2-3 and the third absorption negative electrode 2-4 of the metal reflection layer are vertically arranged on the right side of the metal reflection thin film 2-9. The third absorption positive electrode 2-5 and the fourth absorption positive electrode 2-6 of the metal reflection layer are arranged side by side below the metal reflection thin film 2-9. The fourth absorption negative electrode 2-7 and the first absorption negative electrode 2-8 of the metal reflection layer are vertically arranged on the left side of the metal reflection thin film 2-9.

[0028] The fourth specific implementation manner: As Figure 4 shown, on the basis of the first specific implementation manner, an electrode material layer first absorption positive electrode 3-1, an electrode material layer second absorption positive electrode 3-2, an electrode material layer second absorption negative electrode 3-3, an electrode material layer third absorption negative electrode 3-4, an electrode material layer third absorption positive electrode 3-5, an electrode material layer fourth absorption positive electrode 3-6, an electrode material layer fourth absorption negative electrode 3-7, an electrode material layer first absorption negative electrode 3-8, a first absorption long electrode 3-16, a first absorption short electrode 3-15, a second absorption long electrode 3-9, a second absorption short electrode 3-10, a third absorption long electrode 3-12, a third absorption short electrode 3-11, a fourth absorption long electrode 3-13, and a fourth absorption short electrode 3-14 are provided on the electrode material layer 3;

[0029] The electrode material layer first absorption positive electrode 3-1 is connected to the first absorption long electrode 3-16. The electrode material layer first absorption negative electrode 3-8 is connected to the first absorption short electrode 3-15. The electrode material layer second absorption positive electrode 3-2 is connected to the second absorption long electrode 3-9. The electrode material layer second absorption negative electrode 3-3 is connected to the second absorption short electrode 3-10. The electrode material layer third absorption positive electrode 3-5 is connected to the third absorption long electrode 3-12. The electrode material layer third absorption negative electrode 3-4 is connected to the third absorption short electrode 3-11. The electrode material layer fourth absorption positive electrode 3-6 is connected to the fourth absorption long electrode 3-13. The electrode material layer fourth absorption negative electrode 3-7 is connected to the fourth absorption short electrode 3-14.

[0030] Specific Embodiment 5: As Figure 1 shown, on the basis of Specific Embodiment 1, the first absorption positive electrode 1-1 of the dielectric layer is connected to the first absorption positive electrode 3-1 of the electrode material layer through the first absorption positive electrode 2-1 of the metal reflection layer. The first absorption negative electrode 1-8 of the dielectric layer is connected to the first absorption negative electrode 3-8 of the electrode material layer through the first absorption negative electrode 2-8 of the metal reflection layer. The second absorption positive electrode 1-2 of the dielectric layer is connected to the second absorption positive electrode 3-2 of the electrode material layer through the second absorption positive electrode 2-2 of the metal reflection layer. The second absorption negative electrode 1-3 of the dielectric layer is connected to the first absorption negative electrode 3-3 of the electrode material layer through the second absorption negative electrode 2-3 of the metal reflection layer. The third absorption positive electrode 1-5 of the dielectric layer is connected to the third absorption positive electrode 3-5 of the electrode material layer through the third absorption positive electrode 2-5 of the metal reflection layer. The third absorption negative electrode 1-4 of the dielectric layer is connected to the third absorption negative electrode 3-4 of the electrode material layer through the third absorption negative electrode 2-4 of the metal reflection layer. The fourth absorption positive electrode 1-6 of the dielectric layer is connected to the fourth absorption positive electrode 3-6 of the electrode material layer through the fourth absorption positive electrode 2-6 of the metal reflection layer. The fourth absorption negative electrode 1-7 of the dielectric layer is connected to the fourth absorption negative electrode 3-7 of the electrode material layer through the fourth absorption negative electrode 2-7 of the metal reflection layer.

[0031] Working Principle

[0032] The first absorption array 1-9, the second absorption array 1-10, the third absorption array 1-11 and the fourth absorption array 1-12 can receive energy signals in different spectral bands. When receiving an energy signal in a specific band, the absorption array can absorb and convert the energy of this band into heat, and the heat is conducted to the electrode material layer through the metal reflection layer. The electrode material layer is composed of a thermoelectric dielectric material, and the change in temperature will cause a change in the electrical properties of the thermoelectric dielectric layer, thereby causing a change in the electrical signal, realizing the function of detecting this spectral band.

[0033] Taking the first absorption array 1-9 as an example, when working, a voltage is applied between the first absorption positive electrode 1-1 and the first absorption negative electrode 1-8 of the dielectric layer. The voltage is conducted between the first absorption long electrode 3-16 and the first absorption short electrode 3-15 of the electrical appliance material layer and generates a fixed electrical signal. When the spectral band signal set by the first absorption array appears, the first absorption array will convert the energy signal of this band into heat and cause a change in the temperature of the thermoelectric dielectric material of the electrode material layer, thereby generating a change in the electrical signal, so as to realize the function of detecting this spectral band.

[0034] The small spectral detection system based on the infrared spectral absorption array is provided with absorption arrays for four different bands in total. Each absorption array can detect the spectral information of this band, and the spectral detection function can be realized by processing the spectral information of different bands subsequently.

[0035] The working principle of the described small spectral detection system based on an infrared spectral absorption array is as follows: When the absorption array converts the spectral energy signal into heat, causing a temperature change in the thermoelectric dielectric material of the electrode material layer and generating a change in the electrical signal, the current detection module is used to detect the current change in each band, and the digital quantization module quantizes the current. After being processed by the data module, the spectral information of the spectral detection band set by the absorption array is obtained, realizing spectral detection based on the infrared spectral absorption array.

[0036] The described small spectral detection system takes absorption arrays in four different bands as an example. In practice, multiple absorption arrays can be added to achieve spectral detection in a larger spectral range.

[0037] The above is only a preferred embodiment of the present invention and does not impose any form of limitation on the present invention. Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art, without departing from the scope of the technical solution of the present invention, can make some changes or modifications to the above-disclosed technical content to obtain equivalent embodiments with equivalent changes. However, as long as it does not depart from the content of the technical solution of the present invention and is based on the technical essence of the present invention, any simple modification, equivalent replacement, and improvement of the above embodiments still fall within the protection scope of the technical solution of the present invention.

Claims

1. A small spectrum monitoring system based on infrared spectrum absorption array, characterized in that It comprises a metal dielectric layer (1), a metal reflective layer (2), an electrode material layer (3), and a substrate layer (4); A first absorption array (1-9), a second absorption array (1-10), a third absorption array (1-11) and a fourth absorption array (1-12) are provided on the upper surface of the metal dielectric layer (1); The first absorption array (1-9), the second absorption array (1-10), the third absorption array (1-11) and the fourth absorption array (1-12) are arranged side by side in pairs from top to bottom in sequence on the surface of the metal dielectric layer (1).

2. A small-scale spectrum monitoring system based on infrared spectrum absorption array according to claim 1, characterized in that: A first dielectric layer positive absorption electrode (1-1), a second dielectric layer positive absorption electrode (1-2), a second dielectric layer negative absorption electrode (1-3), a third dielectric layer negative absorption electrode (1-4), a third dielectric layer positive absorption electrode (1-5), a fourth dielectric layer positive absorption electrode (1-6), a fourth dielectric layer negative absorption electrode (1-7), and a first dielectric layer negative absorption electrode (1-8) are provided on the metal dielectric layer (1); The first absorption positive electrode (1-1) of the dielectric layer and the first absorption negative electrode (1-8) of the dielectric layer are respectively arranged on the upper side and the left side of the first absorption array (1-9); the second absorption positive electrode (1-2) of the dielectric layer and the second absorption negative electrode (1-3) of the dielectric layer are respectively arranged on the upper side and the right side of the second absorption array (1-10); the third absorption positive electrode (1-5) of the dielectric layer and the third absorption negative electrode (1-4) of the dielectric layer are respectively arranged on the lower side and the right side of the third absorption array (1-11); the fourth absorption positive electrode (1-6) of the dielectric layer and the fourth absorption negative electrode (1-7) of the dielectric layer are respectively arranged on the lower side and the left side of the fourth absorption array (1-12).

3. A small-scale spectrum monitoring system based on infrared spectrum absorption array according to claim 1, characterized in that: A metal reflective film (2-9), a first positive absorption electrode (2-1) of the metal reflective layer, a second positive absorption electrode (2-2) of the metal reflective layer, a second negative absorption electrode (2-3) of the metal reflective layer, a third negative absorption electrode (2-4) of the metal reflective layer, a third positive absorption electrode (2-5) of the metal reflective layer, a fourth positive absorption electrode (2-6) of the metal reflective layer, a fourth negative absorption electrode (2-7) of the metal reflective layer, and a first negative absorption electrode (2-8) of the metal reflective layer are provided on the metal reflective layer (2); The metal reflective film (2-9) is located in the middle of the upper surface of the metal reflective layer (2); the first positive absorption electrode (2-1) of the metal reflective layer and the second positive absorption electrode (2-2) of the metal reflective layer are arranged side by side above the metal reflective film (2-9); the second negative absorption electrode (2-3) of the metal reflective layer and the third negative absorption electrode (2-4) of the metal reflective layer are arranged vertically to the right of the metal reflective film (2-9); the third positive absorption electrode (2-5) of the metal reflective layer and the fourth positive absorption electrode (2-6) of the metal reflective layer are arranged side by side below the metal reflective film (2-9); the fourth negative absorption electrode (2-7) of the metal reflective layer and the first negative absorption electrode (2-8) of the metal reflective layer are arranged vertically to the left of the metal reflective film (2-9).

4. A small-scale spectrum monitoring system based on infrared spectrum absorption array according to claim 1, characterized in that: The electrode material layer (3) is provided with a first absorption positive electrode (3-1) of the electrode material layer, a second absorption positive electrode (3-2) of the electrode material layer, a second absorption negative electrode (3-3) of the electrode material layer, a third absorption negative electrode (3-4) of the electrode material layer, a third absorption positive electrode (3-5) of the electrode material layer, a fourth absorption positive electrode (3-6) of the electrode material layer, a fourth absorption negative electrode (3-7) of the electrode material layer, a first absorption negative electrode (3-8) of the electrode material layer, a first absorption long electrode (3-16), a first absorption short electrode (3-15), a second absorption long electrode (3-9), a second absorption short electrode (3-10), a third absorption long electrode (3-12), a third absorption short electrode (3-11), a fourth absorption long electrode (3-13), and a fourth absorption short electrode (3-14); The first absorption positive electrode (3-1) of the electrode material layer is connected to the first absorption long electrode (3-16), the first absorption negative electrode (3-8) of the electrode material layer is connected to the first absorption short electrode (3-15), the second absorption positive electrode (3-2) of the electrode material layer is connected to the second absorption long electrode (3-9), the second absorption negative electrode (3-3) of the electrode material layer is connected to the second absorption short electrode (3-10), the third absorption positive electrode (3-5) of the electrode material layer is connected to the third absorption long electrode (3-12), the third absorption negative electrode (3-4) of the electrode material layer is connected to the third absorption short electrode (3-11), the fourth absorption positive electrode (3-6) of the electrode material layer is connected to the fourth absorption long electrode (3-13), and the fourth absorption negative electrode (3-7) of the electrode material layer is connected to the fourth absorption short electrode (3-14).

5. A small-scale spectrum monitoring system based on infrared spectrum absorption array according to claim 1, characterized in that The first absorption positive electrode (1-1) of the dielectric layer is connected to the first absorption positive electrode (3-1) of the electrode material layer through the first absorption positive electrode (2-1) of the metal reflective layer, the first absorption negative electrode (1-8) of the dielectric layer is connected to the first absorption negative electrode (3-8) of the electrode material layer through the first absorption negative electrode (2-8) of the metal reflective layer, the second absorption positive electrode (1-2) of the dielectric layer is connected to the second absorption positive electrode (3-2) of the electrode material layer through the second absorption positive electrode (2-2) of the metal reflective layer, the second absorption negative electrode (1-3) of the dielectric layer is connected to the first absorption negative electrode (3-3) of the electrode material layer through the second absorption negative electrode (2-3) of the metal reflective layer, The third absorption positive electrode (1-5) of the dielectric layer is connected to the third absorption positive electrode (3-5) of the electrode material layer through the third absorption positive electrode (2-5) of the metal reflective layer, the third absorption negative electrode (1-4) of the dielectric layer is connected to the third absorption negative electrode (3-4) of the electrode material layer through the third absorption negative electrode (2-4) of the metal reflective layer, the fourth absorption positive electrode (1-6) of the dielectric layer is connected to the fourth absorption positive electrode (3-6) of the electrode material layer through the fourth absorption positive electrode (2-6) of the metal reflective layer, and the fourth absorption negative electrode (1-7) of the dielectric layer is connected to the fourth absorption negative electrode (3-7) of the electrode material layer through the fourth absorption negative electrode (2-7) of the metal reflective layer.

Images