Beam intensity measurement method of ion beam, beam measurement system, equipment and medium

Abstract

The invention provides a beam intensity measurement method of an ion beam, a beam measurement system, equipment and a medium, and relates to the field of general control or regulation systems.The method is applied to the beam measurement system, the beam measurement system comprises a magnetic conductive ring, a Hall sensor and a logical operation circuit, the magnetic conductive ring is provided with a magnetic ring opening, and the Hall sensor is arranged in the magnetic ring opening. The Hall sensor is located at an opening of the magnetic ring, the logic operation circuit is electrically connected with the Hall sensor, and the method comprises the steps that under the condition that a target ion beam to be measured penetrates through the magnetic conductive ring, magnetic ring magnetic lines are generated through the magnetic conductive ring on the basis of beam magnetic lines generated by the collected target ion beam; receiving a magnetic ring magnetic line generated by the magnetic conductive ring through a Hall sensor, and generating a Hall voltage signal; and determining the target beam intensity of the target ion beam through a logic operation circuit according to the Hall voltage signal. The method can detect the beam intensity of the ion beam in a normal working state in real time.

Description

Technical Field

[0001] The present application relates to the field of general control or regulation systems, and particularly to a method for measuring the beam current intensity of an ion beam, a beam current measurement system, a device, and a medium. Background Art

[0002] With the improvement of integrated circuit process technology, higher requirements are put forward for ion implantation equipment. The requirements for the beam current intensity, beam profile, density distribution, etc. of the implanted ion beam are increasing day by day. By reasonably controlling the beam parameters to ensure the uniformity and stability of the beam current has a great impact on the quality of the implanted products and the industrialization of ion implanters. To control the uniformity and stability of the beam current, a device for measuring various parameters and density distribution of the beam current is necessary to analyze and detect the beam current state in real time online to ensure the quality and stability of the implantation process. Summary of the Invention

[0003] The present application provides a method for measuring the beam current intensity of an ion beam, a beam current measurement system, a device, and a medium. It can detect the beam current intensity of the ion beam in real time. The technical solutions are as follows: According to one aspect of the present application, there is provided a method for measuring the beam current intensity of an ion beam. The method is applied to a beam current measurement system, which includes a magnetic conduction ring, a Hall sensor, and a logic operation circuit. The magnetic conduction ring has a magnetic ring opening, the Hall sensor is located at the magnetic ring opening, and the logic operation circuit is electrically connected to the Hall sensor; The method includes: When the target ion beam to be measured passes through the magnetic conduction ring, the magnetic conduction ring generates a magnetic ring magnetic line based on the beam current magnetic line collected from the target ion beam; The Hall sensor receives the magnetic ring magnetic line generated by the magnetic conduction ring and generates a Hall voltage signal; The logic operation circuit determines the target beam current intensity of the target ion beam according to the Hall voltage signal.

[0004] According to another aspect of the present application, there is provided a beam current measurement system, which includes a magnetic conduction ring, a Hall sensor, and a logic operation circuit. The magnetic conduction ring has a magnetic ring opening, the Hall sensor is located at the magnetic ring opening, and the logic operation circuit is electrically connected to the Hall sensor; The magnetic conduction ring is configured to generate a magnetic ring magnetic line based on the beam current magnetic line collected from the target ion beam when the target ion beam to be measured passes through the magnetic conduction ring; The Hall sensor is configured to receive the magnetic ring magnetic line generated by the magnetic conduction ring and generate a Hall voltage signal; The logic operation circuit is configured to determine the target beam current intensity of the target ion beam according to the Hall voltage signal.

[0005] According to one aspect of the present application, there is provided a beam current measurement device, including: a processor and a memory storing a program, the program includes instructions, and when the instructions are executed by the processor, the processor is caused to execute the beam current intensity measurement method of the ion beam as described above.

[0006] According to another aspect of the present application, there is provided a non-transitory computer-readable storage medium storing computer instructions, the computer instructions being used to cause the computer to execute the beam current intensity measurement method of the ion beam as described above.

[0007] According to another aspect of the present application, there is provided a computer program product, the computer program product includes computer instructions, and the computer instructions are stored in a computer-readable storage medium. The processor of the beam current measurement device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the computer device executes the beam current intensity measurement method of the above-mentioned alternating ion beam.

[0008] The beneficial effects brought by the technical solutions provided in the embodiments of the present application at least include: By deploying a beam current measurement system on the transmission path of the target ion beam, and the target ion beam can directly pass through the magnetic conduction ring in the beam current measurement system, so that the normal transmission and operation of the target ion beam will not be affected when measuring the beam current intensity of the target ion beam, it is possible to measure the beam current intensity of the ion beam during normal operation, and achieve the purpose of real-time monitoring of the change trend of the beam current intensity during the normal injection process, timely monitor the beam state, and improve the measurement efficiency of the beam current intensity. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In the following description of the exemplary embodiments in conjunction with the drawings, more details, features and advantages of the present application are disclosed. In the drawings: Figure 1 is a schematic diagram of the measurement principle of a beam current measurement device in the related art; Figure 2 is a schematic structural diagram of a beam current measurement system provided by an embodiment of the present application; Figure 3 shows a flowchart of a method for measuring the beam current intensity of an ion beam according to an exemplary embodiment of the present application; Figure 4 shows a flowchart of another method for measuring the beam current intensity of an ion beam according to an exemplary embodiment of the present application; Figure 5 shows a flowchart of another method for measuring the beam current intensity of an ion beam according to an exemplary embodiment of the present application; Figure 6 It is a schematic structural diagram of a beam current measurement system provided by an embodiment of the present application; Figure 7 It shows a structural block diagram of an exemplary beam current measurement device that can be used to implement the embodiments of the present application. Detailed implementation manners

[0010] Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to more thoroughly and completely understand the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not used to limit the protection scope of the present application.

[0011] It should be understood that the steps described in the method embodiments of the present application can be executed in different orders and / or executed in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this regard.

[0012] As used herein, the term "including" and its variations are open-ended, that is, "including but not limited to". The term "based on" is "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description. It should be noted that the concepts such as "first" and "second" mentioned in the present application are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence relationship of the functions executed by these devices, modules or units. It should be noted that the modifications of "one" and "multiple" mentioned in the present application are illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly stated in the context, it should be understood as "one or more". The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only for illustrative purposes and are not used to limit the scope of these messages or information.

[0013] The solutions of the present invention are described below with reference to the accompanying drawings. The technical solutions provided by the embodiments of the present invention are described in detail through specific embodiments and their application scenarios.

[0014] In order to ensure the quality and stability of the implantation process of the ion implantation device, a beam current measurement device is provided in the related art, Figure 1 It is a schematic diagram of the measurement principle of the beam current measurement device in the related art. As Figure 1As shown in the figure, the beam current measurement device includes a Faraday graphite cup, a permanent magnet N pole, a permanent magnet S pole, a measurement circuit, etc. Additionally, it also includes a water cooling device (not shown in the figure). Among them, the role of the Faraday graphite cup is to receive all the ion beam currents. When the ion beam current hits the Faraday graphite cup, secondary electrons are generated, and the magnitude of the generated current is proportional to the number of charged particles entering the Faraday graphite cup. By measuring this current, the number of ions or electrons hitting the cup wall can be determined. The generated current signal is converted into an analog voltage signal through a high-precision, high-resistance resistor and a preamplifier, and then converted into a digital signal through a voltage-frequency converter (UFC) or an analog-to-digital converter (ADC). Finally, the computer performs data acquisition and calculation.

[0015] Using the beam current measurement device provided by the related technology, although the beam current intensity of the ion beam can be measured, the beam current measurement principle requires the ion beam to hit the Faraday graphite cup, which causes the beam current detection to interrupt the normal injection process. If it is necessary to measure the beam current intensity of the ion beam in real time, the normal injection process needs to be interrupted repeatedly, thereby reducing the production efficiency of the equipment. Moreover, since the normal injection process needs to be interrupted to measure the beam current intensity, it is impossible to monitor the change trend of the beam current intensity during the normal injection process using this beam current measurement device, that is, it is impossible to monitor the beam current state in a timely manner, resulting in possible ineffective wafer dicing and loss of wafer costs.

[0016] Aiming at the problem that the beam current measurement device in the related technology cannot measure the beam current intensity during normal operation in real time, the embodiment of the present application provides a new beam current measurement system (which can also be called a beam current measurement device), which can measure the beam current intensity of the ion beam during the normal process and monitor the change trend of the beam current intensity during the normal process in real time. Figure 2 It is a schematic structural diagram of a beam current measurement system provided by the embodiment of the present application. As Figure 2 shown, the beam current measurement system includes a magnetic conductive ring 201, a Hall sensor 202, and a logic operation circuit 203. The magnetic conductive ring 201 has a magnetic ring opening, the Hall sensor 202 is located at the magnetic ring opening, and the logic operation circuit 203 is electrically connected to the Hall sensor.

[0017] Among them, the magnetic conduction ring 201 is made of a high magnetic permeability material, such as pure iron. The magnetic conduction ring is an open-loop ring, that is, it has a magnetic ring opening, and the size of the opening is based on the space required for installing and fixing the Hall sensor. The inner diameter of the magnetic conduction ring is as small as possible on the premise of ensuring no contact with the ion beam to be measured, so as to collect the beam magnetic force lines as much as possible. Optionally, the shape of the magnetic conduction ring 201 can be an open-loop ring or an open rectangle, and the shape of the magnetic conduction ring 201 can be determined by the beam cross-sectional shape of the target ion beam to be measured. If the beam cross-sectional shape of the target ion beam to be measured is circular, the shape of the magnetic conduction ring 201 can be an open-loop ring; if the beam cross-sectional shape of the target ion beam to be measured is rectangular, the shape of the magnetic conduction ring 201 can be an open rectangle.

[0018] The Hall sensor 202 is installed at the magnetic ring opening of the magnetic conduction ring 201, and is vertically at the height position of the center of the magnetic ring opening, and is horizontally arranged to ensure that all the magnetic ring magnetic force lines can be received; after receiving the magnetic ring magnetic force lines, the Hall sensor 202 can generate a Hall voltage signal.

[0019] The logic operation circuit 203 is used to perform a series of modulations (mainly amplification processing) on the Hall voltage signal generated by the Hall sensor 202, and finally obtain an output voltage signal (Vout). The value of this voltage signal will change with the change of the beam intensity state of the ion beam. Optionally, when the relationship between the voltage signal and the beam intensity is determined, the logic operation circuit 203 can also directly output the beam intensity value of the target ion beam to be detected.

[0020] Based on Figure 2 the beam measurement system shown, please refer to Figure 3 , Figure 3 FIG. shows a flowchart of a method for measuring the beam intensity of an ion beam according to an exemplary embodiment of the present application. Taking this method applied to Figure 2 the beam measurement system shown as an example for illustration. As Figure 3 shown, the method includes: Step 301, when the target ion beam to be measured passes through the magnetic conduction ring, the magnetic conduction ring generates magnetic ring magnetic force lines based on the beam magnetic force lines generated by the collected target ion beam.

[0021] In order to ensure accurate measurement of the beam intensity of the ion beam, the beam measurement system provided by the embodiments of the present application needs to be deployed on the path where the ion beam is stable and propagates in a straight line. Before the measurement starts, it is required that the beam of the ion beam to be measured remains stable, and the energy and cross-section of the ion beam have been adjusted and are in a straight transmission state. In this way, the magnetic field excited around the ion beam is relatively stable, which is convenient for the magnetic conduction ring to collect the magnetic force lines.

[0022] When the beam current measurement system starts to measure the beam current intensity of the target ion beam to be measured, the target ion beam vertically passes through the magnetic conduction ring, and the inner diameter of the magnetic conduction ring is greater than or equal to the beam cross-sectional diameter of the target ion beam, so that the magnetic conduction ring can collect as completely as possible the beam magnetic force lines generated by the target ion beam (the beam magnetic field intensity has a corresponding relationship with the beam current intensity of the ion beam). After that, the magnetic conduction ring generates magnetic ring magnetic force lines according to the collected beam magnetic force lines, and the magnetic field intensity of the magnetic ring magnetic force lines has a corresponding relationship with the beam magnetic field intensity.

[0023] Step 302, receive the magnetic ring magnetic force lines generated by the magnetic conduction ring through the Hall sensor, and generate a Hall voltage signal.

[0024] Since the Hall sensor is deployed at the magnetic ring opening of the magnetic conduction ring, the corresponding Hall sensor can basically completely receive the magnetic ring magnetic force lines generated by the magnetic conduction ring, thereby generating a Hall voltage signal related to the magnetic field intensity.

[0025] Step 303, determine the target beam current intensity of the target ion beam through the logic operation circuit according to the Hall voltage signal. Since the Hall voltage signal may be relatively small, the logic operation circuit includes an amplification circuit for amplifying the Hall voltage signal to obtain the amplified voltage. And since the Hall voltage signal is indirectly related to the beam magnetic force generated by the target ion beam to be measured, and the beam magnetic force of the target ion beam is related to the beam current intensity of the target ion beam, the logic operation circuit can determine and output the target beam current intensity of the target ion beam according to the preset correlation relationship based on the Hall voltage signal. In summary, the embodiment of the present application provides a method for measuring beam current intensity: by deploying a beam current measurement system on the transmission path of the target ion beam, and the target ion beam can directly pass through the magnetic conduction ring in the beam current measurement system, so that the normal transmission and operation of the target ion beam will not be affected when measuring the beam current intensity of the target ion beam, and it is possible to measure the beam current intensity of the ion beam during normal operation and monitor the change trend of the beam current intensity in the normal injection process in real time, timely monitor the beam state, and improve the measurement efficiency of the beam current intensity.

[0026] In order to clarify the relationship between the Hall voltage signal generated by the Hall sensor and the beam current intensity of the ion beam to be measured, the present application provides a measurement method for the corresponding relationship between the two to obtain a specific correlation relationship and store it. Furthermore, during the actual beam current intensity measurement process, the beam current intensity of the ion beam to be measured can be determined based on the correlation relationship.

[0027] Please refer to Figure 4 , Figure 4 which shows a flowchart of another method for measuring the beam current intensity of an ion beam according to an exemplary embodiment of the present application. Taking this method as applied to Figure 2Taking the beam measurement system shown as an example for illustration. As Figure 4 shown, the method includes: Step 401, when the target ion beam to be measured passes through the magnetic conduction ring, the magnetic conduction ring generates magnetic ring magnetic lines based on the beam magnetic lines generated by the collected target ion beam.

[0028] Among them, the target shape of the magnetic conduction ring is related to the beam cross-sectional shape of the target ion beam to be measured. For example, if the beam cross-sectional shape of the target ion beam to be measured is circular, the shape of the magnetic conduction ring can be an open ring; if the beam cross-sectional shape of the target ion beam to be measured is rectangular, the shape of the magnetic conduction ring can be an open rectangle.

[0029] Optionally, the beam measurement system can be configured in a telescopic manner, with two working positions, namely the measurement position and the waiting position. At the measurement position, the target ion beam to be measured passes through (or crosses) the center of the magnetic conduction ring in the beam measurement system; at the waiting position, the magnetic conduction ring in the beam measurement system completely leaves the center of the target ion beam to be measured.

[0030] In a possible implementation manner, when there is no need to measure the beam intensity, the beam measurement system can be controlled to be in the waiting position so that the target ion beam does not pass through the magnetic conduction ring; when the beam measurement system receives a beam intensity measurement instruction, the beam measurement system can be controlled to move from the waiting position to the measurement position so that the target ion beam passes through the magnetic conduction ring in the beam measurement system.

[0031] Optionally, the beam measurement system can be configured with the moving distance from the waiting position to the measurement position, so that the beam measurement system can be controlled to move from the waiting position to the measurement position according to the moving distance.

[0032] Step 402, the Hall sensor receives the magnetic ring magnetic lines generated by the magnetic conduction ring and generates a Hall voltage signal.

[0033] The implementation manners of Step 401 and Step 402 can refer to Step 301 and Step 302, and are not elaborated herein in this embodiment.

[0034] Step 403, the logic operation circuit modulates and processes the Hall voltage signal to obtain a target output voltage.

[0035] Since the Hall voltage signal may be relatively weak, an amplification circuit is provided in the logic operation circuit to modulate and process (such as amplify) the Hall voltage signal to obtain a target output voltage.

[0036] Step 404, the logic operation circuit determines a target association relationship according to the type of the target ion beam to which the target ion beam belongs, and the target association relationship indicates the association relationship between the target output voltage and the beam intensity of the ion beam.

[0037] In order to determine the target beam current intensity of the target ion beam according to the target output voltage, the logical operation circuit pre-stores the correlation relationship between the beam current intensity and the output voltage of the ion beam under various ion beam types. During the actual measurement process, the logical operation circuit can determine the target correlation relationship from multiple candidate correlation relationships according to the target ion beam type to which the target ion beam belongs, and then determine the target beam current intensity of the target ion beam based on the target correlation relationship.

[0038] To improve the accuracy of determining the beam current intensity, before the actual measurement, a measurement experiment will be pre-conducted to determine the candidate correlation relationships corresponding to different candidate ion beam types, and then multiple candidate ion beam types and the candidate correlation relationships associated with the candidate ion beam types will be stored in the logical operation circuit for subsequent invocation of the required target correlation relationship during the beam current measurement process.

[0039] Exemplarily, the target correlation relationship can be in the form of a formula, a table, or a fitted curve. If the target correlation relationship is in the form of a fitted curve, the abscissa of the fitted curve is the output voltage (the output voltage after modulation processing of the Hall sensing voltage output by the Hall sensor), and the ordinate is the beam current intensity; optionally, the form of the fitted curve can be a straight line or a curve, and this embodiment does not limit this.

[0040] To clarify the correlation relationship between the output voltage after processing the Hall voltage signal generated by the Hall sensor and the actual beam current intensity of the ion beam, during the measurement experiment, first, deploy the beam current measurement system provided by the embodiments of the present application on the propagation path of the ion beam to be tested, and deploy a Faraday graphite cup downstream of the beam current measurement system. That is, the test ion beam first passes through the magnetic conduction ring of the beam current measurement system and then impacts the Faraday graphite cup, so that the Faraday graphite cup can receive all the test ion beams. And to ensure the measurement accuracy, the deployment distance between the beam current measurement system and the Faraday graphite cup should be as small as possible. Second, considering that there may be differences in the correlation relationship between the output voltage and the beam current intensity under different ion beam types, establish test ion beams of different candidate ion beam types to construct the candidate correlation relationship between the beam current intensity (test beam current intensity) and the output voltage (test voltage) of the test ion beam under different candidate ion beam types. Different candidate ion beam types are test ion beams with different ion types, different doses, and different energies. Among them, the ion types include but are not limited to the following types: B (boron), P (phosphorus), As (arsenic), Ar (argon), Al (aluminum), etc.

[0041] The specific test process is as follows: For each test ion beam, after the beam current state of the test ion beam is stable, the test ion beam passes through the magnetic conduction ring of the beam current test system. After the Hall voltage signal generated by the Hall sensor is processed by the logic operation circuit, the test voltage is obtained. After passing through the magnetic conduction ring, the test ion beam impacts the Faraday graphite cup, generating an induced current. The test beam current intensity of the test ion beam is determined by measuring the induced current generated on the cup wall. To avoid accidental errors, the test voltage and the test beam current intensity within a preset time period (for example, 30 minutes) are respectively recorded each time. The multiple test voltages recorded within the preset time period are used as the measurement result of the single test voltage, and the multiple test beam current intensities recorded within the preset time period are used as the measurement result of the single test beam current intensity. This is repeated N times, so as to obtain N pairs of test data. Each pair of test data includes the test voltage and its corresponding test beam current intensity. Furthermore, fitting processing is performed based on the N pairs of test data to fit the candidate correlation relationship between the two values, thereby obtaining the candidate correlation relationship corresponding to the candidate ion beam type corresponding to this test ion beam. Among them, N is a positive integer, and the larger the value of N, the more accurate the candidate correlation relationship between the output voltage and the beam current intensity obtained by subsequent fitting. Repeating the above test process, the candidate correlation relationships corresponding to multiple candidate ion beam types can be obtained.

[0042] Optionally, when fitting the N pairs of test data, the fitting methods that can be used include: polynomial fitting, least squares method, linear regression, non-linear regression, etc.

[0043] As can be seen from the above test process, the logic operation circuit stores multiple candidate ion beam types and the candidate correlation relationships associated with the candidate ion beam types. The candidate correlation relationships are obtained by fitting multiple groups of test data pairs of the test ion beams corresponding to the candidate ion beam types. Each group of test data pairs includes the test voltage and the test beam current intensity. The test voltage is the output voltage value determined by the logic operation circuit after the test ion beam passes through the magnetic conduction ring, and the test beam current intensity is the beam current intensity measured when the test ion beam impacts the Faraday graphite cup.

[0044] Optionally, if there is no candidate ion beam type in the logic operation circuit that exactly matches the target ion beam type to which the target ion beam belongs, the candidate ion beam type with the highest similarity can be selected from the candidate ion beam types according to the target ion beam type, and the candidate association relationship associated with the candidate ion beam type with the highest similarity can be determined as the target association relationship. Specifically, if the candidate ion beam type is determined by ion type, dose, and energy, and there is no candidate ion beam type with the ion type, dose, and energy that exactly matches the target ion beam type, the first candidate ion beam type with the same ion beam type can be preferentially screened, and then the candidate ion beam type with the dose and energy closest to the target ion beam type can be selected from the first candidate ion beam types, and then the candidate association relationship corresponding to the candidate ion beam type can be determined as the target association relationship.

[0045] Step 405, determine the target beam current intensity of the target ion beam through the logic operation circuit according to the target association relationship and the target output voltage.

[0046] After determining the target association relationship between the output voltage and the beam current intensity corresponding to the target ion beam to be measured, given the target voltage measured after the target ion beam passes through the magnetic conduction ring, the target beam current intensity of the target ion beam can be determined according to the target voltage and the target association relationship.

[0047] Exemplarily, if the target association relationship is in the form of a fitting curve, the Y value when the X value in the fitting curve is the target voltage can be determined as the target beam current intensity.

[0048] In this embodiment, the candidate association relationships between the output voltage values and the beam current intensities of the test ion beams under various candidate ion beam types are obtained through pre-tests, so that when actually measuring the beam current intensity, the target association relationship can be determined according to the target ion beam type to which the target ion beam belongs, and then the target beam current intensity of the target ion beam can be determined and output according to the target association relationship. To achieve real-time measurement of the beam current intensity of the target ion beam without affecting the normal operation of the target ion beam.

[0049] Since the embodiment of the present application provides a method for real-time measuring the beam current intensity of an ion beam, the beam current state of the target ion beam can be monitored in real time, so as to give an alarm in time when the beam current state of the ion beam is abnormal, and reduce the invalid waste films generated due to the abnormal beam current state.

[0050] Please refer to Figure 5 , Figure 5 which shows a flowchart of another method for measuring the beam current intensity of an ion beam according to an exemplary embodiment of the present application. Taking this method applied to Figure 2 the beam current measurement system shown as an example for illustration. As Figure 5 shown, this method includes: Step 501, when the target ion beam to be measured passes through the magnetic conduction ring, the magnetic conduction ring generates magnetic ring magnetic lines based on the beam magnetic lines generated by the collected target ion beam.

[0051] Step 502, the Hall sensor receives the magnetic ring magnetic lines generated by the magnetic conduction ring and generates a Hall voltage signal.

[0052] Step 503, the logic operation circuit modulates the Hall voltage signal to obtain the target output voltage.

[0053] Step 504, the logic operation circuit determines the target correlation relationship according to the target ion beam type to which the target ion beam belongs, and the target correlation relationship indicates the correlation relationship between the target output voltage and the beam current intensity of the ion beam.

[0054] Step 505, the logic operation circuit determines the target beam current intensity of the target ion beam according to the target correlation relationship and the target output voltage.

[0055] The implementation manners of Steps 501 to 505 can refer to the above embodiments, and are not elaborated herein.

[0056] Step 506, the logic operation circuit determines the target voltage range according to the target ion beam type to which the target ion beam belongs, and the target voltage range is the voltage range of the output voltage determined by the logic operation circuit under normal beam current intensity.

[0057] Wherein, the logic operation circuit also stores multiple candidate ion beam types and candidate voltage ranges matching the candidate ion beam types, and the candidate voltage ranges are determined by the test voltage values determined by the logic operation circuit for the test ion beams corresponding to the candidate ion beam types under normal beam current intensity.

[0058] Specifically, during the test process, a candidate voltage range can be determined according to the test voltage value measured for the test ion beam corresponding to the candidate ion beam type under normal beam current intensity, and it is set that when the candidate voltage range is exceeded, it is default that the ion beam has an abnormal beam current intensity state.

[0059] During the actual beam current intensity measurement process, the logic operation circuit can determine the target voltage range according to the target ion beam type to which the target ion beam belongs, and the target voltage range is the voltage range of the output voltage determined by the logic operation circuit under normal beam current intensity, and then according to the target voltage range, it can monitor in real time whether the target ion beam has an abnormal beam current intensity situation.

[0060] Step 507, if the target output voltage corresponding to the target ion beam is outside the target voltage range, the logic operation circuit outputs a target alarm signal.

[0061] If it is detected that the target output voltage corresponding to the target ion beam is outside the target voltage range, it is determined that the beam current state of the target ion beam may be abnormal, and a target alarm signal can be output through the logic operation circuit.

[0062] Optionally, in order to avoid accidental errors, the logic operation circuit can obtain multiple target output voltages measured within a target time period. If the number of voltages outside the target voltage range among the multiple target output voltages is greater than a quantity threshold, a target alarm signal is output through the logic operation circuit.

[0063] Optionally, while outputting the target alarm signal, the beam current measurement system can send a stop injection instruction to the control device of the ion implanter to control the ion implanter to stop working, thereby avoiding the appearance of more defective wafers and reducing the loss cost.

[0064] In this embodiment, by pre-testing the candidate voltage ranges of normal test voltages under different candidate ion beam types, it is possible to determine whether the current beam current state of the target ion beam is abnormal based on the target voltage range corresponding to the target ion beam during the beam current intensity monitoring process, so as to give an alarm in a timely manner when an abnormality occurs, reduce the number of defective wafers, and further reduce the loss cost caused by the abnormal beam current state.

[0065] Please refer to Figure 6 , which is a schematic structural diagram of a beam current measurement system provided by an embodiment of the present application. The beam current measurement system 600 includes a magnetic conductive ring, a Hall sensor, and a logic operation circuit. The magnetic conductive ring has a magnetic ring opening, the Hall sensor is located at the magnetic ring opening, and the logic operation circuit is electrically connected to the Hall sensor.

[0066] The magnetic conductive ring is configured to generate magnetic ring magnetic lines based on the beam magnetic lines generated by the target ion beam collected when the target ion beam to be measured passes through the magnetic conductive ring. The Hall sensor is configured to receive the magnetic ring magnetic lines generated by the magnetic conductive ring and generate a Hall voltage signal. The logic operation circuit is configured to determine the target beam current intensity of the target ion beam according to the Hall voltage signal.

[0067] Optionally, the logic operation circuit is further configured to: Perform modulation processing on the Hall voltage signal to obtain a target output voltage. Determine a target association relationship according to the target ion beam type to which the target ion beam belongs. The target association relationship indicates the association relationship between the target output voltage and the beam current intensity of the ion beam. Determine the target beam current intensity of the target ion beam according to the target association relationship and the target output voltage.

[0068] Optionally, a plurality of candidate ion beam types and candidate association relationships associated with the candidate ion beam types are stored in the logic operation circuit. The candidate association relationships are obtained by fitting multiple sets of test data pairs of the test ion beams corresponding to the candidate ion beam types. Each set of test data pairs includes a test voltage and a test beam current intensity. The test voltage is the output voltage value determined by the logic operation circuit after the test ion beam passes through the magnetic conduction ring, and the test beam current intensity is the beam current intensity measured by the test ion beam hitting the Faraday graphite cup.

[0069] Optionally, the logic operation circuit is further configured to: Determine a target voltage range based on the target ion beam type to which the target ion beam belongs. The target voltage range is the voltage range of the output voltage determined by the logic operation circuit under normal beam current intensity; If the target output voltage corresponding to the target ion beam is outside the target voltage range, output a target alarm signal.

[0070] Optionally, a plurality of candidate ion beam types and candidate voltage ranges matching the candidate ion beam types are stored in the logic operation circuit. The candidate voltage ranges are determined by the test voltage values determined by the logic operation circuit for the test ion beams corresponding to the candidate ion beam types under normal beam current intensity.

[0071] Optionally, the beam current measurement system is configured with a measurement position and a waiting position; The beam current measurement system is further configured to: When there is no need to measure the beam current intensity, control the beam current measurement system to be in the waiting position so that the target ion beam does not pass through the magnetic conduction ring; When receiving a beam current intensity measurement instruction, control the beam current measurement system to move from the waiting position to the measurement position so that the target ion beam passes through the magnetic conduction ring.

[0072] Optionally, the target shape of the magnetic conduction ring is related to the beam cross-sectional shape of the target ion beam.

[0073] An exemplary embodiment of the present application further provides a beam current measurement device, including: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program that can be executed by the at least one processor. When the computer program is executed by the at least one processor, it is used to cause the beam current measurement device to execute the beam current intensity measurement method of the ion beam in the embodiment of the present application.

[0074] An exemplary embodiment of the present application also provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor of a computer, is configured to cause the computer to execute the beam current intensity measurement method of an ion beam according to an embodiment of the present application.

[0075] An exemplary embodiment of the present application also provides a computer program product, including a computer program, wherein the computer program, when executed by a processor of a computer, is configured to cause the computer to execute the beam current intensity measurement method of an ion beam according to an embodiment of the present application.

[0076] Referring to Figure 7 , a block diagram of a beam current measurement device 700 that can be used as a server or a client of the present application will now be described. It is an example of a hardware device that can be applied to various aspects of the present application. The beam current measurement device is intended to represent various forms of digital electronic computer devices, such as, a laptop computer, a desktop computer, a workbench, a personal digital assistant, a server, a blade server, a mainframe computer, and other suitable computers. The beam current measurement device can also represent various forms of mobile devices, such as, a personal digital processor, a cellular phone, a smart phone, a wearable device, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present application described and / or claimed herein.

[0077] As Figure 7 shown, the beam current measurement device 700 includes a computing unit 701, which can execute various appropriate actions and processes according to the computer program stored in the ROM 702 or the computer program loaded from the storage unit 708 into the RAM 703. In the RAM 703, various programs and data required for the operation of the device 700 can also be stored. The computing unit 701, the ROM 702, and the RAM 703 are connected to each other through a bus 704. The I / O interface 705 is also connected to the bus 704.

[0078] Multiple components in the beam measurement device 700 are connected to the I / O interface 705, including: an input unit 706, an output unit 707, a storage unit 708, and a communication unit 709. The input unit 706 can be any type of device capable of inputting information into the beam measurement device 700. The input unit 706 can receive input digital or character information and generate key signal inputs related to user settings and / or function controls of the beam measurement device. The output unit 707 can be any type of device capable of presenting information and can include, but is not limited to, a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 708 can include, but is not limited to, magnetic disks and optical discs. The communication unit 709 allows the beam measurement device 700 to exchange information / data with other devices via a computer network such as the Internet and / or various telecommunication networks and can include, but is not limited to, a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth device, a WiFi device, a WiMax device, a cellular communication device, and / or the like.

[0079] The computing unit 701 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 701 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 701 executes the various methods and processes described above. For example, in some embodiments, Figure 3 , Figure 4 , Figure 5 the methods shown can be implemented as a computer software program tangibly embodied in a machine-readable medium, such as the storage unit 708. In some embodiments, part or all of the computer program can be loaded and / or installed onto the beam measurement device 700 via the ROM 702 and / or the communication unit 709. In some embodiments, the computing unit 701 can be configured to execute Figure 3 , Figure 4 , Figure 5 the methods shown by any other suitable means (e.g., by means of firmware).

[0080] Furthermore, the beam measurement device 700 can also include a magnetic conductive ring, a Hall sensor, and a logic operation circuit (not shown in the figure). The magnetic conductive ring is used to collect the beam magnetic field lines generated by the target ion beam and generate magnetic ring magnetic field lines when the target ion beam to be measured passes through the magnetic conductive ring. The Hall sensor is used to receive the magnetic ring magnetic field lines generated by the magnetic conductive ring and generate a Hall voltage signal. The logic operation circuit is used to determine the target beam current intensity of the target ion beam based on the Hall voltage signal.

[0081] The program code for implementing the methods of the present application can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing devices, such that when the program codes are executed by the processor or controller, the functions / operations specified in the flowchart and / or block diagram are implemented. The program code can be executed entirely on the machine, partially on the machine, executed partially on the machine and partially on a remote machine as an independent software package, or executed entirely on a remote machine or server.

[0082] In the context of the present application, a machine-readable medium can be a tangible medium that can contain or store a program for use by or in connection with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media would include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0083] As used in the present application, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, device, and / or apparatus (e.g., a disk, an optical disk, a memory, a programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0084] In order to provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or an LCD (liquid crystal display) monitor); and a keyboard and a pointing device (e.g., a mouse or a trackball) through which the user can provide input to the computer. Other kinds of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and the input received from the user can be in any form (including acoustic input, voice input, or tactile input).

[0085] The systems and techniques described herein can be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with an implementation of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system can be interconnected to each other by digital data communication in any form or medium (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0086] A computer system can include clients and servers. The clients and servers are generally remote from each other and typically interact through a communication network. The client - server relationship is created by computer programs that run on respective computers and have a client - server relationship with each other.

Claims

1. A method for measuring the beam intensity of an ion beam, characterized in that: The method is applied to a beam current measurement system, which includes a magnetic ring, a Hall sensor and a logic operation circuit, wherein the magnetic ring has a magnetic ring opening, the Hall sensor is located at the magnetic ring opening, and the logic operation circuit is electrically connected to the Hall sensor; The method comprises: When the target ion beam to be measured passes through the magnetic conductive ring, the magnetic conductive ring generates magnetic flux lines based on the beam flux lines generated by the collected target ion beam. Receiving the magnetic lines of force of the magnetic ring generated by the magnetic conductive ring through the Hall sensor, and generating a Hall voltage signal; The target beam current intensity of the target ion beam is determined by the logic operation circuit according to the Hall voltage signal.

2. The method according to claim 1, characterized in that: Determining the target beam intensity of the target ion beam according to the Hall voltage signal by the logic operation circuit includes: Modulating the Hall voltage signal through the logic operation circuit to obtain a target output voltage; Determining a target association relationship according to a target ion beam type to which the target ion beam belongs by the logic operation circuit, wherein the target association relationship indicates an association relationship between the target output voltage and the beam current intensity of the ion beam; The target beam current intensity of the target ion beam is determined by the logic operation circuit according to the target association relationship and the target output voltage.

3. The method according to claim 2, characterized in that The logic operation circuit stores multiple candidate ion beam types and candidate association relationships associated with the candidate ion beam types. The candidate association relationships are obtained by fitting multiple groups of test data pairs corresponding to the candidate ion beam types. Each group of test data pairs includes a test voltage and a test beam current intensity. The test voltage is the output voltage value determined by the logic operation circuit after the test ion beam passes through the magnetic ring, and the test beam current intensity is the beam current intensity measured when the test ion beam hits the Faraday graphite cup.

4. The method according to claim 2, characterized in that: The method further comprises: Determining a target voltage range based on the target ion beam type to which the target ion beam belongs through the logic operation circuit, wherein the target voltage range is a voltage range of an output voltage determined by the logic operation circuit under normal beam current intensity; If the target output voltage corresponding to the target ion beam is outside the target voltage range, a target alarm signal is output through the logic operation circuit.

5. The method according to claim 4, characterized in that The logic operation circuit stores a plurality of candidate ion beam types and candidate voltage ranges matching the candidate ion beam types, and the candidate voltage ranges are determined by the test voltage value determined by the logic operation circuit under normal beam current intensity for the test ion beam corresponding to the candidate ion beam type.

6. The method according to any one of claims 1 to 3, characterized in that: The beam current measurement system is configured with a measurement position and a waiting position; The method further comprises: In the absence of a beam intensity measurement requirement, controlling the beam current measurement system to be located at the waiting position so that the target ion beam does not pass through the magnetic conductive ring; When a beam intensity measurement instruction is received, the beam current measurement system is controlled to move from the waiting position to the measurement position so that the target ion beam passes through the magnetic conductive ring.

7. The method according to any one of claims 1 to 3, characterized in that: The target shape of the magnetic ring is related to the beam cross-sectional shape of the target ion beam.

8. A beam current measurement system, characterized in that: The beam current measurement system comprises a magnetic ring, a Hall sensor and a logic operation circuit, wherein the magnetic ring has a magnetic ring opening, the Hall sensor is located at the magnetic ring opening, and the logic operation circuit is electrically connected to the Hall sensor; The magnetic conductive ring is used to generate magnetic flux lines of the magnetic ring based on the collected beam flux lines generated by the target ion beam when the target ion beam to be measured passes through the magnetic conductive ring; The Hall sensor is used to receive the magnetic field lines of the magnetic ring generated by the magnetic conductive ring and generate a Hall voltage signal; The logic operation circuit is used to determine the target beam current intensity of the target ion beam according to the Hall voltage signal.

9. A beam current measurement device, comprising: A processor and a memory for storing programs; The program includes instructions, which, when executed by the processor, cause the processor to perform the method according to any one of claims 1 to 7.

10. A non-transitory computer-readable storage medium storing computer instructions, wherein: The computer instructions are used to cause the computer to execute the method according to any one of claims 1-7.

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