Developing device, method of using same, and semiconductor device

Abstract

The invention provides a developing device, a use method thereof and semiconductor equipment. The developing device comprises a nozzle piece and a separator, the nozzle piece comprises a containing cavity and a liquid spraying part, and the liquid spraying part is of a hollow circular-truncated-cone-shaped structure; the separator is inserted into the accommodating cavity to divide the accommodating cavity into a buffer cavity and a flow guide cavity, the buffer cavity is communicated with a developing liquid supply pipeline, and the flow guide cavity is connected with the liquid spraying part; the buffer cavity is communicated with the flow guide cavity, and the developing liquid can flow along the inner wall of the liquid spraying part after flowing through the flow guide cavity. The spraying range of the developing solution is enlarged, the contact area of the developing solution and the wafer is greatly increased, the reaction speed of the developing solution and the exposed part or the non-exposed part of the wafer after photoetching is accelerated, the developing process time is shortened, the use amount of the developing solution is reduced, impact of the developing solution on the wafer and splashing of the developing solution are avoided, and the developing efficiency is improved. Therefore, the wafer developing defect is avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a developing device and a use method thereof and a semiconductor device. Background Art

[0002] As the back-end equipment of the photolithography machine, the developer is mainly used to develop the exposed patterns on the wafer. The coating and development process is an indispensable process in the chip production process and is a necessary process for the precise subsequent process steps. The development process not only directly affects the formation of fine exposure patterns in the photolithography process, but also the pattern quality of the development process has a profound impact on the results of pattern transfer in subsequent etching and ion implantation processes. The developer is an indispensable key processing equipment in the integrated circuit manufacturing process.

[0003] The developing process of the developing device in the prior art generally adopts immersion development, that is, spraying enough developer onto the surface of the wafer to form a water film shape, and then fixing or slowly rotating the wafer. Generally, the developer is spun multiple times, and the chemical reagents of the developer are replenished by immersion multiple times to update the chemical reaction between the developer and the photoresist, and then the excess developer is shaken off, and all chemicals on both sides of the wafer are rinsed with deionized water to remove them, and then the wafer is spun dry.

[0004] The current mainstream developing device is to apply the developer to the wafer surface through the developing nozzle, and at the same time, the wafer rotates, and the developer is completely covered on the wafer surface by the centrifugal force, so that the developer reacts chemically with the exposed part or non-exposed part of the wafer after photolithography. However, this developing device has the following problems:

[0005] (1) The nozzle generally adopts a small-diameter circular nozzle, and the developer spraying range is small. The nozzle generally needs to move at a slower speed to ensure that the developer is in full contact with the wafer, resulting in a longer development process time;

[0006] (2) The developer is discharged in a columnar shape, and the contact area between the developer and the wafer is small. A large amount of developer needs to be sprayed, which not only increases the developer thickness on the wafer surface, but also wastes a large amount of developer.

[0007] (3) The developer is sprayed vertically onto the wafer at a certain flow rate. The shear force generated by the liquid flow acts vertically on the wafer, causing impact on the wafer and splashing of the developer, resulting in development defects.

[0008] (4) The developer spraying mainly relies on the centrifugal force of the high-speed rotation of the wafer. The developer cannot fully contact the wafer, which will cause insufficient development and prolong the development reaction time. Summary of the invention

[0009] The object of the present invention is to provide a developing device, a using method thereof, and a semiconductor device, so as to solve the problems in the prior art, such as small ejection range of the developing solution, small contact area between the developing solution and the wafer, long developing process time, waste of the developing solution, and large impact force of the developing solution on the wafer, which is likely to cause developing defects on the wafer.

[0010] To achieve the above object, the developing device of the present invention includes a nozzle member and a partition member; the nozzle member includes a receiving cavity and a liquid spraying portion, and the liquid spraying portion has a hollow frustum-shaped structure; the partition member is inserted into the receiving cavity to divide the receiving cavity into a buffer cavity and a guiding cavity, the buffer cavity is communicated with the developing solution supply pipeline, the guiding cavity is connected to the liquid spraying portion, the buffer cavity is communicated with the guiding cavity and enables the developing solution to flow along the inner wall of the liquid spraying portion after flowing through the guiding cavity.

[0011] The semiconductor device of the present invention includes a plurality of the above-mentioned developing devices.

[0012] The beneficial effects of the developing device of the present invention and the semiconductor device including the developing device are as follows: by inserting the partition member into the receiving cavity to divide the receiving cavity into a buffer cavity and a guiding cavity, both the buffer cavity and the guiding cavity can buffer the developing solution flowing in from the developing solution supply pipeline, avoiding the direct spraying of the developing solution in the developing solution supply pipeline onto the wafer. At the same time, combined with the communication between the buffer cavity and the guiding cavity and enabling the developing solution to flow along the inner wall of the liquid spraying portion after flowing through the guiding cavity, the vertical force of the developing solution is reduced, avoiding the impact of the developing solution on the wafer and the splashing of the developing solution, thereby avoiding the occurrence of developing defects on the wafer; by the liquid spraying portion having a hollow frustum-shaped structure, the developing solution can form a frustum-shaped liquid surface after flowing out along the inner wall of the frustum-shaped liquid spraying portion, and finally the developing solution is sprayed on the wafer to form an annular structure, thus greatly increasing the contact area between the developing solution and the wafer, accelerating the reaction speed between the developing solution and the exposed or unexposed part after lithography of the wafer, shortening the developing process time, and being beneficial to reducing the usage amount of the developing solution; moreover, the liquid spraying portion having a hollow frustum-shaped structure increases the ejection range of the developing solution, so that the developing device can move at a faster speed, reducing the overall developing process time; at the same time, the liquid spraying portion having a hollow frustum-shaped structure enables the developing solution to be ejected rotationally from the liquid spraying portion, so that the developing solution film on the wafer surface rotates, which is beneficial to the full contact between the developing solution and the exposed or unexposed part after lithography of the wafer, accelerating the reaction speed between the developing solution and the exposed or unexposed part after lithography of the wafer, shortening the developing process time, and being beneficial to reducing the usage amount of the developing solution. The rotational spraying of the liquid spraying portion can change the direction of the developing solution shear force, increase the horizontal component force and the axial force, reduce the vertical force of the developing solution, avoid the impact of the developing solution on the wafer and the splashing of the developing solution, thereby avoiding the occurrence of developing defects on the wafer.

[0013] Preferably, one inner wall of the developing solution supply pipeline is tangent to the inner wall of the buffer cavity, so that the developing solution entering the buffer cavity rotates clockwise or counterclockwise along the inner wall of the buffer cavity, and the rotation direction of the developing solution along the inner wall of the buffer cavity is the same as the rotation direction of the wafer to be developed. The beneficial effect is that: the developing solution can form a clockwise or counterclockwise vortex in the buffer cavity, and after flowing through the diversion cavity, the vortex can flow out along the inner wall of the liquid spraying part to form a rotating frustum-shaped liquid surface. Finally, the developing solution is sprayed on the wafer to form a continuously rotating ring-shaped developing solution ring. With the centrifugal force of the high-speed rotation of the wafer, the developing solution can fully contact the wafer, greatly accelerating the reaction speed between the developing solution and the exposed or unexposed part after lithography of the wafer, shortening the developing process time, and being beneficial to reducing the usage amount of the developing solution.

[0014] Preferably, the separator includes a separating part for separating the accommodating cavity into the buffer cavity and the diversion cavity. The separating part is provided with a plurality of diversion holes communicating the buffer cavity and the diversion cavity. The plurality of diversion holes are inclined on the separating part, and the liquid inlet part of the diversion hole is arranged close to the developing solution supply pipeline, and the liquid outlet part of the diversion hole is arranged far from the developing solution supply pipeline. The beneficial effect is that: the diversion holes are provided to divert the developing solution, so that the developing solution changes from a turbulent flow state to a laminar flow state, and the developing solution can flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the diversion cavity through the diversion holes. The diversion holes are inclined on the separating part with the liquid inlet part close to the developing solution supply pipeline and the liquid outlet part far from the developing solution supply pipeline, which can increase the flow rate of the developing solution passing through the diversion holes, be beneficial to accelerating the reaction speed between the developing solution and the exposed or unexposed part after lithography of the wafer, shortening the developing process time, and thus being beneficial to reducing the usage amount of the developing solution.

[0015] Preferably, the included angle between the center line of the diversion hole from the liquid inlet part to the liquid outlet part and the upper surface of the separating part is 10° - 20°. The beneficial effect is that: if the included angle is less than 10°, the developing solution cannot generate a vortex after flowing out through the diversion hole; if the included angle is greater than 20°, the developing solution cannot flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the diversion cavity.

[0016] Preferably, the ratio of the total area of the liquid inlet parts of all the diversion holes to the upper surface of the separating part is 20% - 40%. The beneficial effect is that: it is beneficial to make the developing solution generate a vortex after flowing out through the diversion holes and make the developing solution flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the diversion cavity, that is, to form a stable diversion, avoiding the impact of the developing solution on the wafer and the splashing of the developing solution, thus avoiding the occurrence of wafer developing defects.

[0017] Preferably, the diameter of the liquid inlet of the liquid spraying part is smaller than that of the liquid outlet of the liquid spraying part, and the diameter of the liquid inlet of the liquid spraying part is 4 mm to 8 mm. The beneficial effects are as follows: If the diameter of the liquid inlet of the liquid spraying part is less than 4 mm, the developing solution cannot generate a vortex after flowing out through this diversion hole; if the diameter of the liquid inlet of the liquid spraying part is greater than 8 mm, the developing solution cannot flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the diversion cavity.

[0018] Preferably, the included angle between the inner wall of the liquid spraying part and the axial center line of the liquid spraying part is 30° to 60°. The beneficial effects are as follows: If this included angle is less than 30°, the developing solution cannot flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the diversion cavity; if this included angle is greater than 60°, the contact area between the developing solution and the wafer is relatively small, the reaction rate between the developing solution and the exposed or unexposed part after lithography of the wafer is slow, the developing process time is long, and the waste of the developing solution is caused.

[0019] Preferably, the flow rate of the developing solution flowing into the buffer cavity through the developing solution supply pipeline is 300 mL / min to 800 mL / min. The beneficial effects are as follows: It is beneficial to generate a vortex after the developing solution flows out through this diversion hole, so that the liquid spraying part sprays liquid in a rotating manner, that is, the developing solution film on the wafer surface rotates, which is beneficial to the full contact between the developing solution and the exposed or unexposed part after lithography of the wafer, accelerates the reaction rate between the developing solution and the exposed or unexposed part after lithography of the wafer, shortens the developing process time, and is beneficial to reducing the usage amount of the developing solution; at the same time, the rotating liquid spraying of the liquid spraying part can change the direction of the developing solution shear force, increase the horizontal component force and the axial force, reduce the vertical force of the developing solution, avoid the impact of the developing solution on the wafer and the splashing of the developing solution, thereby avoiding the generation of wafer developing defects.

[0020] Preferably, the partition part further includes an insertion column adapted to the accommodation cavity. An annular groove is provided on the outer wall of the lower part of the insertion column. The bottom end of the insertion column is connected to the partition part, and the inner walls of the partition part and the accommodation cavity surround the opening end of the annular groove to form the buffer cavity. The beneficial effects are as follows: The structure is simple, compact, ingeniously designed, and highly practical.

[0021] Preferably, an exhaust hole is provided in the insertion column, and the exhaust hole communicates the diversion cavity with the atmosphere. The beneficial effects are as follows: To balance the pressure between the liquid spraying part and the outside world and discharge the bubbles generated during the liquid outlet process of the liquid spraying part.

[0022] Preferably, an annular sealing groove is provided on the outer wall of the upper part of the insertion post. The sealing groove is arranged above the annular groove and is spaced from the annular groove, and a sealing member is provided in the sealing groove. The beneficial effect is that it can prevent the developer liquid in the buffer cavity from leaking out from the open end of the accommodating cavity where the partition member is inserted.

[0023] Preferably, the distance between the liquid spraying part and the wafer is greater than 1 mm. The beneficial effect is that it can prevent the impact force of the sprayed developer liquid on the wafer from being too large due to the too close distance between the liquid spraying part and the wafer, which may damage the wafer, and prevent the surface of the wafer from being scratched due to the too close distance between the liquid spraying part and the wafer.

[0024] Preferably, there are 4 to 10 flow guiding holes. The beneficial effect is that it is beneficial to generate a vortex after the developer liquid flows out through these flow guiding holes, and enable the developer liquid to flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the flow guiding cavity, that is, to form a stable flow guiding, avoiding the impact of the developer liquid on the wafer and the splashing of the developer liquid, thus avoiding the development defects of the wafer.

[0025] Preferably, the aperture of the flow guiding hole is 0.5 mm to 2 mm. The beneficial effect is that it is beneficial to generate a vortex after the developer liquid flows out through these flow guiding holes, and enable the developer liquid to flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the flow guiding cavity, that is, to form a stable flow guiding, avoiding the impact of the developer liquid on the wafer and the splashing of the developer liquid, thus avoiding the development defects of the wafer.

[0026] Preferably, the method for using the developing device is characterized by including the following steps:

[0027] S1. Vacuum adsorb the wafer to be developed on the moving mechanism and rotate it at a certain speed;

[0028] S2. Set the developing device above the center of the wafer and spray the developer liquid so that a continuously rotating developer liquid ring is formed on the surface of the wafer;

[0029] S3. Control the flow rate of the developer liquid to change from small to large or from large to small so that the developer liquid can fill the inner circumference of the developer liquid ring;

[0030] S4. Control the developing device to move from the center of the wafer to the edge of the wafer at a certain rate, and control the developing device to spray the developer liquid at a certain flow rate until the entire surface of the wafer is coated with the developer liquid.

[0031] The beneficial effects of the method for using the developing device of the present invention are as follows: By using the developing device of the present invention, controlling the flow rate of the developing solution in the developing device, and cooperating with the rotational movement of the wafer, the usage amount of the developing solution can be reduced, the reaction rate between the developing solution and the exposed or unexposed part after wafer lithography can be accelerated, and the developing process time can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic cross-sectional view of the developing device according to an embodiment of the present invention;

[0033] Figure 2 is Figure 1 a schematic diagram of the developing device shown spraying the developing solution;

[0034] Figure 3 is Figure 1 a schematic diagram of the flow of the developing solution in the developing device shown;

[0035] Figure 4 is Figure 1 a schematic diagram of the use of the developing device shown. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0036] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meaning as understood by those of ordinary skill in the art in the field to which the present invention belongs. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0037] To overcome the problems existing in the prior art, embodiments of the present invention provide a developing device, a method for using the same, and a semiconductor device, so as to solve the problems in the prior art such as small spraying range of the developing solution, small contact area between the developing solution and the wafer, long developing process time, waste of the developing solution, and large impact force of the developing solution on the wafer, which is likely to cause developing defects.

[0038] Figure 1 is a schematic cross-sectional view of the developing device according to an embodiment of the present invention; Figure 2 is Figure 1 a schematic diagram of the developing device shown spraying the developing solution; Figure 3 is Figure 1 a schematic diagram of the flow of the developing solution in the developing device shown.

[0039] In some embodiments, referring to Figures 1 to 3 , the developing device includes a nozzle member 1 and a separating member 2; the nozzle member 1 includes a receiving cavity (not labeled in the figure) and a liquid spraying portion 11, and the liquid spraying portion 11 has a hollow frustum-shaped structure; the separating member 2 is inserted into the receiving cavity (not labeled in the figure) to divide the receiving cavity (not labeled in the figure) into a buffer cavity 12 and a guiding cavity 13, the buffer cavity 12 is communicated with a developing solution supply pipeline 3, the guiding cavity 13 is connected to the liquid spraying portion 11, the buffer cavity 12 is communicated with the guiding cavity 13 and enables the developing solution to flow along the inner wall of the liquid spraying portion 11 after flowing through the guiding cavity 13.

[0040] Specifically, by inserting the separating member 2 into the receiving cavity to divide the receiving cavity into a buffer cavity 12 and a guiding cavity 13, both the buffer cavity 12 and the guiding cavity 13 can buffer the developing solution flowing in from the developing solution supply pipeline 3, avoiding the direct spraying of the developing solution in the developing solution supply pipeline 3 onto the wafer. At the same time, combined with the communication between the buffer cavity 12 and the guiding cavity 13 and enabling the developing solution to flow along the inner wall of the liquid spraying portion 11 after flowing through the guiding cavity 13, the vertical force of the developing solution is reduced, avoiding the impact of the developing solution on the wafer and the splashing of the developing solution, thereby avoiding wafer developing defects; due to the hollow frustum-shaped structure of the liquid spraying portion 11, the developing solution can form a frustum-shaped liquid surface 31 (as shown in Figure 2 ) after flowing out along the inner wall of the frustum-shaped liquid spraying portion 11. Finally, the developing solution is sprayed onto the wafer 4 to form a developing solution ring 32 with an annular structure, thus greatly increasing the contact area between the developing solution and the wafer 4, accelerating the reaction rate between the developing solution and the exposed or unexposed part after wafer lithography, shortening the developing process time, and being beneficial to reducing the usage amount of the developing solution; moreover, the hollow frustum-shaped structure of the liquid spraying portion 11 increases the spraying range of the developing solution, so that the developing device can move at a relatively fast speed, reducing the overall developing process time; at the same time, the hollow frustum-shaped structure of the liquid spraying portion 11 enables the developing solution to be sprayed out rotationally from the liquid spraying portion 11, so that the developing solution film on the surface of the wafer 4 rotates, which is beneficial to the full contact between the developing solution and the exposed or unexposed part after wafer lithography, accelerating the reaction rate between the developing solution and the exposed or unexposed part after wafer lithography, shortening the developing process time, and being beneficial to reducing the usage amount of the developing solution. The rotational spraying of the liquid spraying portion 11 can change the direction of the developing solution shear force, increase the horizontal component force and the axial force, reduce the vertical force of the developing solution, avoid the impact of the developing solution on the wafer 4 and the splashing of the developing solution, thereby avoiding wafer developing defects.

[0041] In some embodiments, referring to Figures 1 to 3, one inner wall of one side of the developer supply pipeline 3 is tangent to the inner wall of the buffer cavity 12, so that the developer entering the buffer cavity 12 rotates clockwise or counterclockwise along the inner wall of the buffer cavity 12, and the rotation direction of the developer along the inner wall of the buffer cavity 12 is the same as the rotation direction of the wafer 4 to be developed. This enables the developer to form a clockwise or counterclockwise vortex in the buffer cavity 12. After the vortex flows through the diversion cavity 13, it can flow out along the inner wall of the liquid spraying part 11 to form a rotating frustum-shaped liquid surface 31. Finally, the developer is sprayed on the wafer 4 to form a continuously rotating annular structure of the developer ring 32. With the centrifugal force of the high-speed rotation of the wafer 4, the developer can fully contact the wafer 4, greatly accelerating the reaction speed between the developer and the exposed or unexposed parts after lithography of the wafer 4, shortening the development process time, and being beneficial to reducing the usage amount of the developer.

[0042] In some embodiments, referring to Figure 3 , one inner wall of one side of the developer supply pipeline 3 is tangent to the inner wall of the buffer cavity 12, and the developer in the buffer cavity 12 rotates counterclockwise along the inner wall of the buffer cavity 12.

[0043] In other embodiments, one inner wall of one side of the developer supply pipeline 3 is tangent to the inner wall of the buffer cavity 12, and the developer in the buffer cavity 12 rotates clockwise along the inner wall of the buffer cavity 12.

[0044] In some embodiments, referring to Figure 1 , the partition member 2 includes a partition portion 21 for partitioning the accommodating cavity (not labeled in the figure) into the buffer cavity 12 and the diversion cavity 13. The partition portion 21 is provided with a plurality of diversion holes 22 communicating the buffer cavity 12 and the diversion cavity 13. The plurality of diversion holes 22 are inclined on the partition portion 21, and the liquid inlet portion (not labeled in the figure) of the diversion hole 22 is arranged close to the developer supply pipeline 3, and the liquid outlet portion (not labeled in the figure) of the diversion hole 22 is arranged far from the developer supply pipeline 3. The diversion holes 22 are provided to divert the developer, so as to change the developer from a turbulent flow state to a laminar flow state, so that the developer can flow uniformly and stably along the inner wall of the liquid spraying part 11 after flowing through the diversion cavity 13 through the diversion holes 22. And the diversion holes 22 are inclined on the partition portion 21 by arranging the liquid inlet portion close to the developer supply pipeline 3 and the liquid outlet portion far from the developer supply pipeline 3, which can increase the flow rate of the developer passing through the diversion holes 22, be beneficial to accelerating the reaction speed between the developer and the exposed or unexposed parts after lithography of the wafer 4, shortening the development process time, and thus being beneficial to reducing the usage amount of the developer.

[0045] In some embodiments, referring to Figure 1, the partition part 2 further includes an insertion post 23 adapted to the accommodation cavity (not marked in the figure). An annular groove 24 is provided on the outer wall of the lower part of the insertion post 23. The bottom end of the insertion post 23 is connected to the partition part 21, and the inner walls of the partition part 21 and the accommodation cavity (not marked in the figure) surround the opening end of the annular groove 24 to form the buffer cavity 12. This structure is simple, compact, ingeniously designed and highly practical.

[0046] In some specific embodiments, refer to Figure 1 , an annular bearing platform is provided in the accommodation cavity (not marked in the figure), and the partition part 21 is hermetically abutted against the annular bearing platform.

[0047] In some embodiments, refer to Figure 1 , an exhaust hole 25 is provided in the insertion post 23. The exhaust hole 25 communicates the diversion cavity 13 with the atmosphere to balance the pressure between the liquid spraying part and the outside and discharge the bubbles generated during the liquid discharging process of the liquid spraying part 11.

[0048] In some embodiments, refer to Figure 1 , an annular sealing groove 26 is provided on the outer wall of the upper part of the insertion post 23. The sealing groove 26 is arranged above the annular groove 24 and is spaced from the annular groove 24. A sealing member 5 is provided in the sealing groove 26 to prevent the developing solution in the buffer cavity 12 from leaking out from the opening end of the accommodation cavity into the partition member 2.

[0049] In some embodiments, the included angle between the center line of the diversion hole from the liquid inlet part to the liquid outlet part and the upper surface of the partition part is 10° - 20°. If this included angle is less than 10°, the developing solution cannot generate a vortex after flowing out through this diversion hole. If this included angle is greater than 20°, the developing solution cannot flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the diversion cavity.

[0050] In some specific embodiments, the included angle between the center line of the diversion hole from the liquid inlet part to the liquid outlet part and the upper surface of the partition part is 15°.

[0051] In some embodiments, the ratio of the total area of the liquid inlet parts of all the diversion holes to the upper surface of the partition part is 20% - 40%. This is beneficial to enabling the developing solution to generate a vortex after flowing out through this diversion hole and enabling the developing solution to flow uniformly and stably along the inner wall of the liquid spraying part after flowing through the diversion cavity, that is, forming a stable diversion, avoiding the impact of the developing solution on the wafer and the splashing of the developing solution, thereby avoiding the development defects of the wafer.

[0052] In some specific embodiments, the ratio of the total area of the liquid inlet portions of all the diversion holes to the upper surface of the partition portion is any one of 20%, 22%, 25%, 28%, 30%, 33%, 35%, 37%, and 40%.

[0053] In some embodiments, there are 4 to 10 diversion holes. This is conducive to generating vortices after the developing solution flows out through these diversion holes, and enabling the developing solution to flow uniformly and stably along the inner wall of the liquid spraying portion after flowing through the diversion cavity, that is, forming stable diversion, avoiding the impact of the developing solution on the wafer and the splashing of the developing solution, thereby avoiding wafer developing defects.

[0054] In some specific embodiments, there are 6 diversion holes.

[0055] In some embodiments, the aperture of the diversion hole is 0.5 mm to 2 mm. This is conducive to generating vortices after the developing solution flows out through these diversion holes, and enabling the developing solution to flow uniformly and stably along the inner wall of the liquid spraying portion after flowing through the diversion cavity, that is, forming stable diversion, avoiding the impact of the developing solution on the wafer and the splashing of the developing solution, thereby avoiding wafer developing defects.

[0056] In some specific embodiments, the aperture of the diversion hole is any one of 0.5 mm, 0.8 mm, 1 mm, 1.2 mm, 1.5 mm, 1.7 mm, and 2 mm.

[0057] In some embodiments, the diameter of the liquid inlet of the liquid spraying portion is smaller than the diameter of the liquid outlet of the liquid spraying portion, and the diameter of the liquid inlet of the liquid spraying portion is 4 mm to 8 mm. If the diameter of the liquid inlet of the liquid spraying portion is less than 4 mm, vortices cannot be generated after the developing solution flows out through these diversion holes. If the diameter of the liquid inlet of the liquid spraying portion is greater than 8 mm, the developing solution cannot flow uniformly and stably along the inner wall of the liquid spraying portion after flowing through the diversion cavity.

[0058] In some specific embodiments, the diameter of the liquid inlet of the liquid spraying portion is any one of 4 mm, 5 mm, 5.5 mm, 6 mm, 7 mm, and 8 mm.

[0059] In some embodiments, the angle between the inner wall of the liquid spraying portion and the axial center line of the liquid spraying portion is 30° to 60°. If this angle is less than 30°, the developing solution cannot flow uniformly and stably along the inner wall of the liquid spraying portion after flowing through the diversion cavity. If this angle is greater than 60°, the contact area between the developing solution and the wafer is small, the reaction rate of the developing solution with the exposed or unexposed part of the wafer after lithography is slow, the developing process time is long, and the developing solution is wasted.

[0060] In some specific embodiments, the angle between the inner wall of the liquid spraying part and the axial center line of the liquid spraying part is any one of 30°, 40°, 45°, 50°, 55° and 60°.

[0061] In some embodiments, the distance between the liquid spraying part and the wafer is greater than 1 mm. This can prevent the impact force of the developed solution ejected on the wafer from being too large and damaging the wafer due to the too-close distance between the liquid spraying part and the wafer, and can also prevent the surface of the wafer from being scratched due to the too-close distance between the liquid spraying part and the wafer.

[0062] Specifically, the size of the developed solution ring 32 is related to the structure of the liquid spraying part 11, that is, the angle between the inner wall of the liquid spraying part and the axial center line of the liquid spraying part, the diameter of the liquid inlet of the liquid spraying part, and the distance between the liquid spraying part 11 and the wafer 4. By changing the size of the developed solution ring 32, the development process time and the reaction effect of the developed solution can be controlled.

[0063] In some embodiments, the flow rate of the developed solution flowing into the buffer cavity through the developed solution supply pipeline is 300 mL / min to 800 mL / min. This is beneficial to generating a vortex after the developed solution flows out through this diversion hole, so that the liquid spraying part rotates to spray the liquid, that is, the developed solution film on the surface of the wafer rotates. This is beneficial to making the developed solution fully contact with the exposed part or non-exposed part after wafer lithography, accelerating the reaction rate between the developed solution and the exposed part or non-exposed part after wafer lithography, shortening the development process time, and is beneficial to reducing the usage amount of the developed solution; at the same time, the liquid spraying part rotates to spray the liquid, which can change the direction of the developed solution shear force, increase the horizontal component force and axial force, reduce the vertical force of the developed solution, and avoid the impact of the developed solution on the wafer and the splashing of the developed solution, thus avoiding the development defects of the wafer.

[0064] In some specific embodiments, the flow rate of the developed solution flowing into the buffer cavity through the developed solution supply pipeline is 400 mL / min to 800 mL / min.

[0065] In some specific embodiments, the flow rate of the developed solution flowing into the buffer cavity through the developed solution supply pipeline is 600 mL / min.

[0066] In some embodiments, the method of using the developing device includes the following steps:

[0067] S1. Vacuum adsorb the wafer to be developed on the moving mechanism and rotate it at a certain speed;

[0068] S2. Set the developing device above the center of the wafer and spray the developed solution to form a continuously rotating developed solution ring on the surface of the wafer;

[0069] S3. Control the flow rate of the developing solution to change from small to large or from large to small, so that the developing solution can fill the inner circumference of the developing solution ring.

[0070] S4. Control the developing device to move from the center of the wafer to the edge of the wafer at a certain rate, and control the developing device to spray the developing solution at a certain flow rate until the developing solution coats the entire surface of the wafer.

[0071] Specifically, by using the developing device of the present invention, and by controlling the flow rate of the developing solution in the developing device and cooperating with the rotational movement of the wafer, the usage amount of the developing solution can be reduced, the reaction speed between the developing solution and the exposed or unexposed part after lithography of the wafer can be accelerated, and the developing process time can be shortened.

[0072] In some specific embodiments, referring to Figures 1 to 3 , the steps of the developing device spraying the developing solution include:

[0073] S110. Control the developing solution in the developing solution supply pipeline 3 to enter the buffer cavity 12 at a certain flow rate. At a high flow rate, the developing solution will flow counterclockwise along the inner wall of the buffer cavity 12.

[0074] S120. The developing solution rotates and flows into the diversion holes 22. The developing solution will diffuse outward at the diversion holes 22 and form a vortex in the diversion cavity 13.

[0075] S130. The vortex-shaped developing solution flows along the inner wall of the liquid spraying part 11, and a rotating frustum-shaped liquid surface 31 is formed after passing through the liquid outlet of the liquid spraying part 11. Since the liquid spraying part 11 is at a certain distance from the wafer 4, finally, the developing solution sprayed on the wafer surface will form a continuously rotating developing solution ring 32.

[0076] Figure 4 For Figure 1 the schematic diagram of the use of the developing device shown.

[0077] In some specific embodiments, the usage method of the developing device includes the following steps:

[0078] S1. Vacuum adsorb the wafer 4 to be developed on the moving mechanism and rotate it counterclockwise at a certain speed, as in Figure 4 the A direction shown.

[0079] S2. Place the developing device above the center of the wafer 4 and spray the developing solution, so that the developing solution forms a continuously rotating developing solution ring 32 on the surface of the wafer 4, as in Figure 2 shown.

[0080] S3. Control the flow rate of the developer to change from small to large or from large to small, so that the developer can fill the inner circumference of the developer ring 32;

[0081] S4. Control the developing device to move from the center of the wafer to the edge of the wafer at a certain rate, such as Figure 4 in the B direction shown, and control the developing device to spray the developer at a certain flow rate until the developer coats the entire surface of the wafer 4. The flow rate of the developer is the same in this step.

[0082] In some embodiments, the semiconductor device includes a plurality of the developing devices.

[0083] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention described in the claims. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A developing device, characterized in that, comprising: a nozzle member including a receiving cavity and a liquid spraying portion, the liquid spraying portion having a hollow frustum-shaped structure; a partition member inserted into the receiving cavity to divide the receiving cavity into a buffer cavity and a diversion cavity, the buffer cavity being communicated with a developing solution supply pipeline, the diversion cavity being connected to the liquid spraying portion, the buffer cavity being communicated with the diversion cavity and enabling the developing solution to flow along the inner wall of the liquid spraying portion after flowing through the diversion cavity.

2. The developing device according to claim 1, characterized in that, one inner wall of the developing solution supply pipeline is tangent to the inner wall of the buffer cavity, so that the developing solution entering the buffer cavity rotates clockwise or counterclockwise along the inner wall of the buffer cavity, and the rotation direction of the developing solution on the inner wall of the buffer cavity is the same as the rotation direction of the wafer to be developed.

3. The developing device according to claim 1, characterized in that, the partition member includes a partition portion for dividing the receiving cavity into the buffer cavity and the diversion cavity, the partition portion being provided with a plurality of diversion holes communicating the buffer cavity and the diversion cavity, the plurality of diversion holes being obliquely arranged on the partition portion, and the liquid inlet portion of the diversion hole being arranged close to the developing solution supply pipeline, and the liquid outlet portion of the diversion hole being arranged far from the developing solution supply pipeline.

4. The developing device according to claim 3, characterized in that, the included angle between the center line of the diversion hole from the liquid inlet portion to the liquid outlet portion and the upper surface of the partition portion is 10° - 20°.

5. The developing device according to claim 3, characterized in that, the ratio of the total area of the liquid inlet portions of all the diversion holes to the upper surface of the partition portion is 20% - 40%.

6. The developing device according to claim 1, characterized in that, the diameter of the liquid inlet of the liquid spraying portion is smaller than the diameter of the liquid outlet of the liquid spraying portion, and the diameter of the liquid inlet of the liquid spraying portion is 4 mm - 8 mm.

7. The developing device according to claim 1 or 6, characterized in that, the included angle between the inner wall of the liquid spraying portion and the axial center line of the liquid spraying portion is 30° - 60°.

8. The developing device according to claim 1, characterized in that, the flow rate of the developing solution flowing into the buffer cavity from the developing solution supply pipeline is 300 mL / min - 800 mL / min.

9. The developing device according to claim 3, characterized in that, the partition portion further includes an insertion column adapted to the receiving cavity, an annular groove is provided on the outer wall of the lower part of the insertion column, the bottom end of the insertion column is connected to the partition portion, and the inner walls of the partition portion and the receiving cavity surround the open end of the annular groove to form the buffer cavity.

10. The developing device according to claim 9, characterized in that, an exhaust hole is provided in the insertion column, and the exhaust hole communicates the diversion cavity and the atmosphere.

11. The developing device according to claim 9, characterized in that, An annular sealing groove is provided on the outer wall of the upper part of the insertion post. The sealing groove is arranged above the annular groove and is spaced from the annular groove, and a sealing member is provided in the sealing groove.

12. The developing device according to claim 1, characterized in that the distance between the liquid spraying part and the wafer is greater than 1 mm.

13. The developing device according to claim 3 or 5, characterized in that there are 4 to 10 diversion holes.

14. The developing device according to claim 3 or 5, characterized in that the aperture of the diversion hole is 0.5 mm to 2 mm.

15. A method for using the developing device according to any one of claims 1-14, characterized in that it includes the following steps: S1. Vacuum adsorb the wafer to be developed on the moving mechanism and rotate it at a certain speed; S2. Arrange the developing device above the center of the wafer and spray the developing solution so that the developing solution forms a continuously rotating developing solution ring on the surface of the wafer; S3. Control the flow rate of the developing solution to change from small to large or from large to small so that the developing solution can fill the inner circumference of the developing solution ring; S4. Control the developing device to move from the center of the wafer to the edge of the wafer at a certain rate, and control the developing device to spray the developing solution at a certain flow rate until the developing solution covers the entire surface of the wafer.

16. A semiconductor device, characterized in that it includes a plurality of developing devices according to any one of claims 1-14.

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