Bonding optimization method, electronic equipment, storage medium and program product

Abstract

The invention provides a bonding optimization method, electronic equipment, a storage medium and a program product. The bonding optimization method comprises the following steps: constructing a digital twinborn model based on acquired related data of bonding equipment; simulating the bonding based on the digital twin model to obtain a simulation result; and parameters in bonding are adjusted based on a simulation result, so that the bonding process is optimized. By constructing the digital twinborn model and performing simulation according to the digital twinborn model, the trend of warping and dislocation after bonding is effectively predicted, bonding parameters are adjusted according to a simulation result, the bonding process is optimized, warping in the bonding process is corrected in time, and the purpose of improving the bonding quality is achieved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to a bonding optimization method, an electronic device, a storage medium, and a program product. Background Art

[0002] In the existing hybrid bonding process, a point pressing method is usually used to preliminarily bond the upper and lower wafers in the middle, and the bonding process is transmitted through the adsorption energy on the bonding surface. Due to the existence of factors such as bonding waves and friction, in the prior art, even if the wafers are in a slightly warped state before bonding, there will still be a large warpage after bonding. In addition to warpage, due to the deformation of the wafers during the bonding process, misalignment occurs at the originally expected alignment positions of the upper and lower wafers, which seriously affects the bonding quality. In the existing bonding technology, it is impossible to effectively predict the trend of warpage and misalignment after bonding, and there is also a lack of a method for timely correcting warpage during the bonding process. Summary of the Invention

[0003] Aiming at the problems existing in the prior art, the present invention provides a bonding optimization method, an electronic device, a storage medium, and a program product, which at least partially solve the problems in the prior art that it is impossible to effectively predict the trend of warpage and misalignment after bonding, and there is also a lack of a method for timely correcting warpage during the bonding process.

[0004] In a first aspect, an embodiment of the present disclosure provides a bonding optimization method, including: Constructing a digital twin model based on the obtained bonding equipment-related data; Performing simulation on the bonding based on the digital twin model to obtain a simulation result; Adjusting the parameters in the bonding based on the simulation result, so as to optimize the bonding process.

[0005] Optionally, the digital twin model includes: a device physical model and a bonding kinetics process simulation prediction model; The device physical model is a virtual model constructed based on the bonding equipment; The bonding kinetics process simulation prediction model is a simulation prediction model constructed based on the actual physical quantities in the bonding equipment. The real-time device state of the bonding equipment is used as the model input, and by simulating and predicting the existing state of the bonding equipment, the bonding kinetics process can be effectively reflected.

[0006] Optionally, constructing the digital twin model includes obtaining the acting force of the air film during the bonding process on the bonding process and the adhesion force during the bonding process.

[0007] Optionally, the acting force of the air film during the bonding process on the bonding process is related to the gap size, and the relationship formula between the acting force and the gap size is: , wherein, is the air viscosity; is the air film gap; is the resistance of the air film to the wafer, represents the characteristic height.

[0008] Optionally, the formula for the adhesion force in the bonding process is: , is the interface gap, is the spacing of when the interaction force of the bonding interface; is the interface bonding energy; is the characteristic adhesion length.

[0009] Optionally, the parameters in the adjustment of the parameters in the bonding based on the simulation results include: Wafer displacement, temperature, humidity, and air concentration.

[0010] Optionally, the optimization of the bonding process includes: Regulating the angle and height of the bonding chuck.

[0011] In a second aspect, an embodiment of the present disclosure further provides an electronic device, which includes: At least one processor; and, A memory communicatively connected to the at least one processor; wherein, The memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute any one of the bonding optimization methods in the first aspect.

[0012] In a third aspect, an embodiment of the present disclosure further provides a computer-readable storage medium, which stores computer instructions for causing a computer to execute any one of the bonding optimization methods in the first aspect.

[0013] In a fourth aspect, an embodiment of the present disclosure further provides a computer program product, including a computer program / instructions, which when executed by a processor implement any one of the bonding optimization methods in the first aspect.

[0014] The bonding optimization method, electronic device, storage medium and program product provided by the present invention. The bonding optimization method constructs a digital twin model and performs simulation according to the digital twin model, so as to effectively predict the trends of warping and misalignment after bonding, adjust the bonding parameters according to the simulation results, optimize the bonding process, and timely correct the warping during the bonding process, so as to achieve the purpose of improving the bonding quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] By describing the exemplary embodiments of the present disclosure in more detail with reference to the accompanying drawings, the above and other objects, features and advantages of the present disclosure will become more apparent. In the exemplary embodiments of the present disclosure, the same reference numerals generally represent the same components.

[0016] Figure 1 and Figure 2 is a schematic structural diagram of the bonding device provided by an embodiment of the present disclosure; Figure 3 is a flowchart of the bonding optimization method provided by an embodiment of the present disclosure; Figure 4 is a schematic block diagram of an electronic device provided by an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.

[0018] It should be clear that the embodiments of the present disclosure are specifically illustrated by the following specific examples, and those skilled in the art can easily understand the other advantages and effects of the present disclosure from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. The present disclosure can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present disclosure without creative efforts belong to the scope of protection of the present disclosure.

[0019] Note that the following description pertains to various aspects of embodiments within the scope of the appended claims. It should be apparent that the aspects described herein can be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on this disclosure, those skilled in the art should understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of the aspects set forth herein can be used to implement a device and / or practice a method. Additionally, this device can be implemented and this method can be practiced using other structures and / or functionality in addition to one or more of the aspects set forth herein.

[0020] It should also be noted that the diagrams provided in the following embodiments merely illustrate the basic concept of the present disclosure schematically. Only the components related to the present disclosure are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0021] In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, those skilled in the art will understand that the aspects can be practiced without these specific details.

[0022] As Figure 1 and Figure 2 shown, the bonding device includes upper and lower suction cups, a pressing probe, a vacuum suction cup control device, and sensors equipped on the suction cups.

[0023] The upper and lower suction cups are used for fixing and transporting the wafer during the hybrid bonding process. The pressing probe is used to initiate the bonding process. The vacuum suction cup control device is used to control the position and angle of the vacuum suction cup during the bonding process. The sensors include an infrared displacement sensor, a temperature sensor, a humidity sensor, etc.

[0024] For ease of understanding, as Figure 3 shown, this embodiment discloses a bonding optimization method, including: Constructing a digital twin model based on the obtained bonding device-related data; Performing simulation on the bonding based on the digital twin model to obtain a simulation result; Adjusting the parameters in the bonding based on the simulation result, thereby optimizing the bonding process.

[0025] Optionally, the digital twin model includes: a device physical model and a bonding kinetic process simulation and prediction model; The device physical model is a virtual model constructed based on the bonding device; The simulation prediction model of the bonding kinetic process is a simulation prediction model constructed based on the actual physical quantities of the bonding equipment. The real-time equipment state of the bonding equipment is used as the model input, and the existing state of the bonding equipment is simulated and predicted, so as to effectively reflect the bonding kinetic process.

[0026] Optionally, the construction of the digital twin model includes obtaining the acting force of the air film during the bonding process on the bonding process and the adhesion force during the bonding process.

[0027] Optionally, the acting force of the air film during the bonding process on the bonding process is related to the gap size, and the relationship formula between the acting force and the gap size is: , where, is the air viscosity; is the air film gap; is the resistance of the air film to the wafer, represents the characteristic height, that is, the minimum thickness of the incompressible fluid.

[0028] Optionally, the formula for the adhesion force during the bonding process is: , is the interface gap, is the mutual acting force of the bonding interface when the spacing is ; is the interface bonding energy; is the characteristic adhesion length.

[0029] Optionally, the parameters in the adjustment of the parameters during bonding based on the simulation results include: wafer displacement, temperature, humidity and air concentration.

[0030] Optionally, the optimization of the bonding process includes: regulating the angle and height of the bonding chuck.

[0031] In this embodiment, by optimizing the bonding method and the bonding equipment, the quality of the hybrid bonding process is optimized.

[0032] The main process is as follows: (1) Construct a digital twin model of the hybrid bonding process based on the bonding equipment and actual physical quantities; (2) Set the digital twin model based on the actual physical process and actual physical quantities; (3) Perform the hybrid bonding process; (4) During the bonding process, collect data based on the sensors on the bonding equipment and feedback it to the digital twin system; (5) Identify the bonding state through the digital twin system, perform simulation predictions based on the original settings and existing data, and obtain the real-time optimal values of factors such as the real-time bonding gap and bonding adsorption force based on the bonding optimization results; (6) Debug the bonding equipment parameters based on the optimal values of the bonding parameters in the above steps; (7) Repeat the above steps to complete the bonding process; The digital twin model includes the physical model of the hybrid bonding equipment and the simulation prediction model of the bonding dynamics process: (1) Equipment physical model: Construct a virtual model based on the actual bonding equipment, and complete the construction of the model through existing mature modeling software. In addition to the geometric information of the bonding equipment, this physical model can also be set through interactive software to perform real-time monitoring and control settings on the real bonding equipment.

[0033] (2) Bonding dynamics process simulation prediction model (hereinafter referred to as the simulation prediction model): A simulation prediction model constructed based on the actual physical quantities in the bonding model. This model uses the real-time equipment state as the model input, and performs simulation predictions on the current situation through the simulation model, which can effectively reflect the bonding dynamics process.

[0034] Since there is a very small bonding gap between the upper and lower wafers during the bonding process, usually about 50μm, but this gap cannot be ignored. Therefore, in the simulation prediction model of the upper and lower wafers, in addition to the conventional mechanical equations, the influence of the tiny air film on the bonding process needs to be considered. Usually, the force of the air film on the bonding process during the bonding process is resistance, and the relationship between its resistance and the gap size can be described by the following formula:

[0035] , In the formula: is the air viscosity; is the air film gap; is the resistance of the air film to the wafer.

[0036] Since the bonding process is mainly achieved through the adhesion force, it is necessary to describe the adhesion force, and its specific description formula is as follows: , is the interface gap; is the mutual force of the bonding interface when the spacing is ; is the interface bonding energy; is the characteristic adhesion length; Complete the construction of the prediction model by combining the above defined formulas.

[0037] During the bonding process, the bonding equipment follows the following steps for bonding: (1) Fix the wafer to a specified position through a preset program and transmit the status data to the digital twin model; (2) Press the probe down to start bonding; (3) The sensor detects the bonding status every 1 s and transmits the wafer displacement and temperature to the digital twin model; (4) Fine-tune the bonding equipment based on the simulation results of the digital twin model, and optimize the simulation parameters and data results in the digital twin model to obtain the optimal state of the chuck in real time; (5) Regulate the angle and height of the bonding chuck according to the optimal state result; (6) Repeat the above steps until the wafer bonding is completed; The electronic device disclosed in this embodiment includes a memory and a processor. The memory is used to store non-transitory computer-readable instructions. Specifically, the memory may include one or more computer program products, and the computer program products may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may include, for example, random access memory (RAM) and / or cache memory, etc. The non-volatile memory may include, for example, read-only memory (ROM), hard disk, flash memory, etc.

[0038] The processor may be a central processing unit (CPU) or other forms of processing units with data processing capabilities and / or instruction execution capabilities, and may control other components in the electronic device to perform desired functions. In an embodiment of the present disclosure, the processor is used to run the computer-readable instructions stored in the memory, so that the electronic device executes all or part of the steps of the bonding optimization method of the foregoing embodiments of the present disclosure.

[0039] Those skilled in the art should understand that, in order to solve the technical problem of how to obtain a good user experience effect, this embodiment may also include well-known structures such as communication buses and interfaces, and these well-known structures should also be included in the protection scope of the present disclosure.

[0040] As Figure 4 is a schematic structural diagram of an electronic device provided by an embodiment of the present disclosure. It shows a schematic structural diagram of an electronic device suitable for implementing the electronic device in the embodiments of the present disclosure. Figure 4 The shown electronic device is only an example and should not bring any limitation to the functions and usage scope of the embodiments of the present disclosure.

[0041] As Figure 4As shown, an electronic device may include a processing device (such as a central processing unit, a graphics processing unit, etc.), which may perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) or a program loaded from a storage device into a random access memory (RAM). In the RAM, various programs and data required for the operation of the electronic device are also stored. The processing device, the ROM, and the RAM are connected to each other via a bus. An input / output (I / O) interface is also connected to the bus.

[0042] Generally, the following devices may be connected to the I / O interface: an input device including, for example, a sensor or a visual information acquisition device, etc.; an output device including, for example, a display screen, etc.; a storage device including, for example, a magnetic tape, a hard disk, etc.; and a communication device. The communication device may allow the electronic device to communicate with other devices (such as edge computing devices) wirelessly or wiredly to exchange data. Although Figure 4 an electronic device with various devices is shown, it should be understood that it is not required to implement or have all the shown devices. Instead, more or fewer devices may be implemented or had.

[0043] In particular, according to an embodiment of the present disclosure, the process described above with reference to the flowchart may be implemented as a computer software program. For example, an embodiment of the present disclosure includes a computer program product, which includes a computer program carried on a non-transitory computer-readable medium, and the computer program contains program codes for performing the method shown in the flowchart. In such an embodiment, the computer program may be downloaded and installed from a network through the communication device, or installed from a storage device, or installed from the ROM. When the computer program is executed by the processing device, all or part of the steps of the bonding optimization method of the embodiment of the present disclosure are executed.

[0044] For a detailed description of this embodiment, reference may be made to the corresponding descriptions in the foregoing embodiments, and details will not be repeated here.

[0045] The computer-readable storage medium disclosed in this embodiment stores non-temporary computer-readable instructions. When the non-temporary computer-readable instructions are run by a processor, all or part of the steps of the bonding optimization methods of the foregoing embodiments of the present disclosure are executed.

[0046] The above-mentioned computer-readable storage medium includes but is not limited to: optical storage media (such as CD-ROMs and DVDs), magneto-optical storage media (such as MOs), magnetic storage media (such as magnetic tapes or external hard drives), media with built-in rewritable non-volatile memories (such as memory cards), and media with built-in ROMs (such as ROM cartridges).

[0047] For a detailed description of this embodiment, reference may be made to the corresponding descriptions in the foregoing embodiments, and details will not be repeated here.

[0048] The basic principles of the present disclosure have been described in connection with specific embodiments. However, it should be noted that the advantages, benefits, effects, etc. mentioned in the present disclosure are only examples and not limitations. It cannot be considered that these advantages, benefits, effects, etc. are essential for each embodiment of the present disclosure. Additionally, the specific details disclosed above are only for illustrative and easy-to-understand purposes and not limitations. These details do not limit the present disclosure to necessarily implementing with the above specific details.

[0049] In the present disclosure, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. The block diagrams of devices, apparatuses, equipment, and systems involved in the present disclosure are only illustrative examples and do not intend to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "having", etc. are open-ended terms, meaning "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used herein refer to the word "and / or" and can be used interchangeably with it, unless the context clearly indicates otherwise. The word "such as" used herein refers to the phrase "such as but not limited to" and can be used interchangeably with it.

[0050] In addition, as used herein, the "or" used in the listing of items starting with "at least one" indicates a disjunctive listing. So, for example, the listing of "at least one of A, B, or C" means A or B or C, or AB or AC or BC, or ABC (i.e., A and B and C). Furthermore, the term "exemplary" does not mean that the described examples are preferred or better than other examples.

[0051] It should also be noted that in the systems and methods of the present disclosure, each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent solutions of the present disclosure.

[0052] Various changes, substitutions, and alterations to the technologies described herein can be made without departing from the teachings of the technology defined by the appended claims. Additionally, the scope of the claims of the present disclosure is not limited to the specific aspects of the processes, machines, manufactures, compositions of events, means, methods, and acts described above. Current or later-developed processes, machines, manufactures, compositions of events, means, methods, or acts that perform substantially the same function or achieve substantially the same result as the corresponding aspects described herein can be utilized. Thus, the appended claims include such processes, machines, manufactures, compositions of events, means, methods, or acts within their scope.

[0053] The foregoing description of the disclosed aspects enables any person skilled in the art to make or use the present disclosure. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the aspects shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0054] The foregoing description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present disclosure to the form disclosed herein. Although several example aspects and embodiments have been discussed above, those skilled in the art will recognize some variations, modifications, alterations, additions, and subcombinations thereof.

Claims

1. A bonding optimization method, characterized in that: include: Build a digital twin model based on the acquired bonding equipment related data; The bonding is simulated based on the digital twin model to obtain simulation results; The bonding parameters are adjusted based on the simulation results to optimize the bonding process.

2. The bonding optimization method according to claim 1, characterized in that: The digital twin model includes: a physical model of the equipment and a simulation prediction model of the bonding dynamics process; The device physical model is a virtual model built based on the bonding device; The bonding dynamics process simulation prediction model is a simulation prediction model constructed based on actual physical quantities in the bonding device. The real-time device status of the bonding device is used as the model input. By simulating and predicting the existing status of the bonding device, the bonding dynamics process is effectively reflected.

3. The bonding optimization method according to claim 1, characterized in that: The construction of the digital twin model includes obtaining the force of the air film on the bonding process and the adhesion force of the bonding process.

4. The bonding optimization method according to claim 3, characterized in that: The force of the air film on the bonding process is related to the gap size. The relationship between the force and the gap size is as follows: ， in, is the air viscosity; is the air film gap; is the resistance of the air film to the wafer, Indicates the feature height.

5. The bonding optimization method according to claim 3, characterized in that: The formula for the adhesion force of the bonding process is: ， is the interface gap, The spacing is The interaction force at the bonding interface; is the interface bonding energy; is the characteristic adhesion length.

6. The bonding optimization method according to claim 1, characterized in that: The parameters in the bonding process that are adjusted based on the simulation results include: Wafer displacement, temperature, humidity and air concentration.

7. The bonding optimization method according to claim 1, characterized in that: The optimization of the bonding process comprises: Adjust the angle and height of the bonding chuck.

8. An electronic device, characterized in that: The electronic device comprises: at least one processor; and, a memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the bonding optimization method described in any one of claims 1-7.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a computer to execute the bonding optimization method described in any one of claims 1-7.

10. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instruction is executed by a processor, the bonding optimization method described in any one of claims 1-7 is implemented.

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