Thermal simulation method and system for semiconductor power component

Abstract

The invention relates to the technical field of computer simulation, in particular to a thermal simulation method and system for a semiconductor power assembly. The method comprises the following steps: obtaining geometric structures, material attributes and working characteristics corresponding to each semiconductor power assembly, and carrying out finite element simulation modeling to generate a finite element model of each semiconductor power assembly; performing heat source distribution response analysis on the finite element model of each semiconductor power component based on the working characteristics to generate corresponding heat source distribution fields of each semiconductor power component under different working conditions; based on material attributes, heat conduction simulation analysis is carried out on heat source distribution fields corresponding to the semiconductor power assemblies under different working conditions, and a semiconductor assembly electrical model is constructed to carry out electric heat distribution influence evaluation calculation and thermal simulation iterative optimization; and generating a heat flow temperature distribution simulation optimization result among the semiconductor power components. The thermal simulation precision corresponding to the semiconductor power assembly can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of computer simulation, and particularly to a thermal simulation method and system for semiconductor power components. Background Art

[0002] As a key power regulation device, semiconductor power components generate a large amount of heat during operation. Especially in high-power and high-frequency application environments, the thermal management problem is particularly prominent. Excessive temperature will lead to a decline in device performance, shortening of lifespan, and even device failure. Therefore, effective thermal management has become one of the core technologies for designing and optimizing semiconductor power components. In terms of numerical simulation, technologies such as the finite element method (FEM) and computational fluid dynamics (CFD) are widely used in the thermal analysis of semiconductor power components. By constructing accurate heat conduction models and fluid models, the temperature distribution and heat flow transfer of the components can be theoretically predicted. However, the traditional experimental measurement method detects the temperature distribution by installing temperature sensors on the device surface or using infrared imaging technology. Although it can provide certain actual data, it often cannot comprehensively and accurately describe the internal thermal distribution field of semiconductor power components, and the simulation results are easily affected by initial conditions, boundary conditions, and material properties, thus reducing the accuracy of thermal simulation. Summary of the Invention

[0003] Based on this, it is necessary for the present invention to provide a thermal simulation method and system for semiconductor power components to solve at least one of the above technical problems.

[0004] To achieve the above object, a thermal simulation method for semiconductor power components includes the following steps:

[0005] Step S1: Obtain the geometric structure, material properties, and working characteristics corresponding to each semiconductor power component, and perform finite element simulation modeling based on the geometric structure corresponding to each semiconductor power component to generate a finite element model for each semiconductor power component;

[0006] Step S2: Perform a heat source distribution response analysis on the finite element model of each semiconductor power component based on the working characteristics corresponding to each semiconductor power component to generate a heat source distribution field corresponding to each semiconductor power component under different working conditions; perform a heat conduction simulation analysis on the heat source distribution field corresponding to each semiconductor power component under different working conditions based on the material properties corresponding to each semiconductor power component to obtain the heat transfer conduction temperature distribution field between each semiconductor power component under different working conditions;

[0007] Step S3: Construct electrical models of semiconductor components corresponding to different operating conditions based on the operating characteristics of each semiconductor power component, and evaluate and calculate the influence of the electrothermal distribution on the heat transfer temperature distribution field among the semiconductor power components under different operating conditions based on the electrical models of the semiconductor components, so as to obtain the influence loss of the heat generated by the electrical flow on the heat flow distribution under different operating conditions;

[0008] Step S4: Obtain the environmental thermal boundary conditions corresponding to each semiconductor power component under different operating conditions, and perform thermal simulation iteration optimization on the heat transfer temperature distribution field among the semiconductor power components based on the environmental thermal boundary conditions corresponding to each semiconductor power component under different operating conditions and the influence loss of the heat generated by the electrical flow on the heat flow distribution, so as to generate the simulation optimization results of the heat flow temperature distribution among the semiconductor power components.

[0009] Further, step S1 includes the following steps:

[0010] Step S11: Obtain the geometric structures corresponding to each semiconductor power component, including the refined dimensions and appearance shapes corresponding to each semiconductor power component;

[0011] Step S12: Extract the material properties of the materials corresponding to each semiconductor power component according to the preset material database and the latest material performance literature, and obtain the material properties corresponding to each semiconductor power component, including the thermal conductivity, specific heat capacity, and thermal expansion coefficient of each material corresponding to each semiconductor power component;

[0012] Step S13: Obtain the operating characteristics corresponding to each semiconductor power component, including the operating characteristic parameters corresponding to each semiconductor power component under different actual operating conditions;

[0013] Step S14: Perform finite element simulation modeling according to the geometric structures corresponding to each semiconductor power component to generate finite element models of each semiconductor power component.

[0014] Further, step S2 includes the following steps:

[0015] Step S21: Determine the operating load conditions corresponding to each semiconductor power component through the operating characteristic simulation of each semiconductor power component, including power loss, switching loss, heat convection, and heat radiation operating load conditions;

[0016] Step S22: Perform thermal response simulation modeling on the finite element models of each semiconductor power component based on the operating load conditions corresponding to each semiconductor power component to generate thermal response simulation models corresponding to each semiconductor power component under different operating conditions;

[0017] Step S23: Perform a heat source distribution response analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions to generate a heat source distribution field corresponding to each semiconductor power component under different working conditions;

[0018] Step S24: Based on the material properties corresponding to each semiconductor power component, perform a heat conduction simulation analysis on the heat source distribution field corresponding to each semiconductor power component under different working conditions to obtain the heat transfer conduction temperature distribution field among each semiconductor power component under different working conditions.

[0019] Further, Step S23 includes the following steps:

[0020] Step S231: Perform a thermal performance change evaluation analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions to obtain the thermal performance changes corresponding to each semiconductor power component under different working conditions, including the component heat dissipation capacity and the component thermal stability capacity;

[0021] Step S232: Based on the thermal performance changes corresponding to each semiconductor power component under different working conditions, perform a transient numerical simulation of heat quantity in the time domain on the corresponding thermal response simulation model to obtain the instantaneous heat quantity response change corresponding to each semiconductor power component under different working conditions;

[0022] Step S233: Perform a local heat accumulation analysis on the instantaneous heat quantity response change corresponding to each semiconductor power component under different working conditions to obtain the local thermal response accumulation distribution corresponding to each semiconductor power component under different working conditions;

[0023] Step S234: Use fluid dynamics technology to perform a heat flow simulation analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions to generate a heat flow simulation field corresponding to each semiconductor power component under different working conditions; perform a heat flux density distribution statistical analysis on the heat flow simulation field corresponding to each semiconductor power component under different working conditions to obtain the heat flux density distribution corresponding to each semiconductor power component under different working conditions;

[0024] Step S235: Based on the local thermal response accumulation distribution and the heat flux density distribution corresponding to each semiconductor power component under different working conditions, perform a heat source distribution response analysis on the corresponding thermal response simulation model to generate a heat source distribution field corresponding to each semiconductor power component under different working conditions.

[0025] Further, Step S24 includes the following steps:

[0026] Step S241: Analyze the heat source distribution characteristics of each semiconductor power component under different working conditions to obtain the heat source distribution characteristics of each semiconductor power component under different working conditions, including the heat source distribution intensity, heat source distribution direction, and heat source distribution frequency;

[0027] Step S242: Obtain the electrical and thermal properties of the materials corresponding to each semiconductor power component, and combine the external environmental conditions to simulate the heat source power dispersion of the heat source distribution characteristics of each semiconductor power component under different working conditions, so as to generate the heat source power divergence distribution of each semiconductor power component under different working conditions;

[0028] Step S243: Based on the thermal conductivity of each semiconductor power component, conduct a heat transfer simulation analysis on the heat source power divergence distribution of each semiconductor power component under different working conditions to obtain the heat transfer simulation field between each semiconductor power component under different working conditions;

[0029] Step S244: Based on the material properties of each semiconductor power component, conduct a simulation of the heat transfer temperature distribution of the heat transfer simulation field between each semiconductor power component under different working conditions to obtain the heat transfer temperature distribution field between each semiconductor power component under different working conditions.

[0030] Further, step S244 includes the following steps:

[0031] Obtain the material thermal conductivity difference between each semiconductor power component through the thermal conductivity of each semiconductor power component;

[0032] Based on the material thermal conductivity difference between each semiconductor power component, solve the heat transfer temperature gradient change of the heat transfer simulation field between each semiconductor power component under different working conditions to obtain the heat transfer temperature gradient change distribution between each semiconductor power component under different working conditions;

[0033] Obtain the heat flow temperature change difference corresponding to different regions between each semiconductor power component according to the heat transfer temperature gradient change distribution between each semiconductor power component under different working conditions, and conduct a thermal stress distribution analysis on the heat flow temperature change difference corresponding to different regions between each semiconductor power component based on the specific heat capacity and thermal expansion coefficient of each semiconductor power component to obtain the thermal stress distribution between each semiconductor power component under different working conditions;

[0034] Conduct a temperature distribution simulation according to the heat transfer temperature gradient change distribution and thermal stress distribution between each semiconductor power component under different working conditions to obtain the heat transfer temperature distribution field between each semiconductor power component under different working conditions.

[0035] Further, step S3 includes the following steps:

[0036] Step S31: Construct an electrical model of semiconductor components corresponding to different working conditions according to the working characteristics of each semiconductor power component;

[0037] Step S32: Obtain the electrical flow paths between each semiconductor power component under different working conditions through the electrical model of semiconductor components corresponding to different working conditions;

[0038] Step S33: Conduct statistical analysis of electrical load and current density on the electrical flow paths between each semiconductor power component under different working conditions to obtain the electrical load and current density at the flow positions of each semiconductor power component under different working conditions;

[0039] Step S34: Based on the electrical load and current density at the flow positions of each semiconductor power component under different working conditions, use the evaluation calculation formula for the influence of electrothermal distribution to evaluate and calculate the electrothermal distribution influence on the heat transfer conduction temperature distribution field between each semiconductor power component under different working conditions, so as to obtain the influence loss of the heat generated by electrical flow on the heat flow distribution under different working conditions.

[0040] Further, the evaluation calculation formula for the influence of electrothermal distribution in step S34 is specifically:

[0041]

[0042] In the formula, Q loss (r, t) is the influence loss of the heat generated by electrical flow on the heat flow distribution at position r and time t, r is the heat flow distribution position parameter, t is the time variable parameter, ρ is the material density of the semiconductor power component, C p is the specific heat capacity of the semiconductor power component material, T(r, t) is the heat generated by the electrical flow corresponding to the semiconductor power component at position r and time t, is the gradient operator, κ(r) is the electrical load of the semiconductor power component at position r, is the gradient of the heat generated by the electricity corresponding to the semiconductor power component at position r and time t, ρ c is the resistivity of the semiconductor power component material, J(r, t) is the current density corresponding to the semiconductor power component at position r and time t, and η is the correction coefficient of the influence loss.

[0043] Further, step S4 includes the following steps:

[0044] Step S41: Obtain the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions, including air flow, coolant flow, and environmental temperature boundary conditions;

[0045] Step S42: Perform numerical correction of heat exchange according to the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions to obtain the heat exchange correction coefficients between each semiconductor power component and the surface environment under different working conditions;

[0046] Step S43: Based on the heat exchange correction coefficients between each semiconductor power component and the surface environment under different working conditions, perform dynamic optimization of heat flow on the corresponding heat conduction paths in the heat conduction temperature distribution field between each semiconductor power component to generate the optimized heat conduction paths corresponding to each semiconductor power component under different working conditions;

[0047] Step S44: Based on the influence loss of the heat generated by the electrical flow on each semiconductor power component under different working conditions on the heat flow distribution, perform dynamic simulation analysis of heat loss on the heat conduction temperature distribution field between each semiconductor power component to obtain the accumulated heat loss distribution corresponding to each semiconductor power component under different working conditions;

[0048] Step S45: Based on the optimized heat conduction paths and the accumulated heat loss distribution corresponding to each semiconductor power component under different working conditions, perform iterative optimization of heat simulation on the heat conduction temperature distribution field between each semiconductor power component to generate the simulation optimization result of the heat flow temperature distribution between each semiconductor power component.

[0049] Furthermore, the present invention also provides a thermal simulation system for semiconductor power components, which is used to execute the thermal simulation method of semiconductor power components as described above. The thermal simulation system for semiconductor power components includes:

[0050] A semiconductor power component simulation module, which is used to obtain the geometric structure, material properties, and working characteristics corresponding to each semiconductor power component, and perform finite element simulation modeling according to the geometric structure corresponding to each semiconductor power component to generate finite element models of each semiconductor power component;

[0051] A thermal conduction simulation module for semiconductor component models, which is used to perform heat source distribution response analysis on the finite element models of each semiconductor power component based on the working characteristics corresponding to each semiconductor power component to generate the heat source distribution fields corresponding to each semiconductor power component under different working conditions; perform thermal conduction simulation analysis on the heat source distribution fields corresponding to each semiconductor power component under different working conditions based on the material properties corresponding to each semiconductor power component, so as to obtain the heat conduction temperature distribution field between each semiconductor power component under different working conditions;

[0052] A semiconductor electro-thermal coupling impact assessment module, which is used to construct a corresponding electrical model of semiconductor components under different working conditions according to the working characteristics of each semiconductor power component, and based on the electrical model of semiconductor components, conduct electro-thermal distribution impact assessment calculations on the heat conduction temperature distribution field among each semiconductor power component under different working conditions, so as to obtain the impact loss of the heat generated by the electrical flow on the heat flow distribution under different working conditions;

[0053] A semiconductor component thermal simulation iterative optimization module, which is used to obtain the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions, and based on the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions and the impact loss of the heat generated by the electrical flow on the heat flow distribution, conduct thermal simulation iterative optimization on the heat conduction temperature distribution field among each semiconductor power component, so as to generate a thermal flow temperature distribution simulation optimization result among each semiconductor power component.

[0054] Advantages of the present invention:

[0055] 1. Compared with the prior art, the beneficial effect of the thermal simulation method for semiconductor power components proposed by the present invention is that by obtaining in detail the geometric structure, material properties and working characteristics of semiconductor power components, a solid foundation can be laid for subsequent thermal analysis and electrical simulation. The geometric structure of each semiconductor power component, such as information on size, shape, outline and its surface roughness, directly affects the conduction efficiency of heat flow and the distribution characteristics of heat sources. Material properties such as thermal conductivity, specific heat capacity, coefficient of thermal expansion, thermal conductance, etc. are also key factors, which determine the temperature distribution and thermal management requirements of the components under different working environments. The working characteristics of semiconductor components, such as working conditions like current, voltage, switching frequency, etc., affect the distribution of heat generation and the situation of heat accumulation. By performing finite element simulation modeling based on the geometric structure of semiconductor power components, the thermal behavior of the components can be accurately simulated under complex geometric and material conditions, providing a reliable basic model for subsequent thermal simulation and optimization. The key to this step lies in being able to comprehensively master the design parameters of each component and providing accurate data input for subsequent thermal analysis and optimization. Secondly, by using heat source distribution response analysis and heat conduction simulation analysis to simulate the temperature distribution and heat transfer conduction characteristics of each semiconductor power component under different working conditions. According to the working characteristics of the components (such as current, voltage, etc.), the heat generated inside and on the surface of the components will cause temperature changes. Through heat source distribution response analysis, the distribution of heat sources inside each component under different working conditions can be calculated, so as to understand the heat distribution generated during operation. On this basis, by analyzing the heat conduction performance of the component materials, the heat transfer conduction process between each component can be further simulated. Multiple physical factors need to be considered in this process, such as heat convection, radiation and heat conduction, etc. Through the simulation of this step, the temperature field and heat flow distribution map of the components under actual working conditions can be obtained, helping designers identify possible overheating areas and avoid the risk of thermal failure in advance. The key to this process lies in being able to accurately predict the thermal behavior under different working conditions and providing data support for subsequent optimized design, so as to be able to comprehensively and accurately analyze the internal thermal distribution field of semiconductor power components.Then, by constructing corresponding electrical models based on the operating characteristics of each semiconductor power component to evaluate the thermal effects during current flow, the electrical models usually consider parameters such as current magnitude, current waveform, switching frequency, and voltage. These electrical parameters directly determine the power loss and heat generation inside the components. By establishing electrical models, the heating effects during electrical flow can be accurately evaluated and coupled with the heat conduction temperature distribution field for calculation, thereby quantifying the impact of the heat generated by electrical flow on the temperature field. The key to this process lies in considering the mutual influence between electrical heating and heat conduction to ensure that thermal management measures can effectively cope with the temperature rise caused by electrical losses. By evaluating the thermal losses caused by electrical flow, areas leading to overheating or improper thermal management can be identified, and corresponding optimization measures can be taken, such as improving the heat dissipation design or using more efficient materials, to ensure the stability and reliability of the components under different electrical operating conditions, thereby enhancing the performance of the entire thermal simulation process. Finally, by obtaining the ambient thermal boundary conditions under different operating conditions, such as the surrounding air temperature, the flow state of the heat dissipation medium, and the external cooling method of the heat source, these environmental conditions directly affect the efficiency of heat conduction and the speed of heat dissipation. During the iterative optimization process of thermal simulation, comprehensively considering the ambient thermal boundary conditions, the thermal losses corresponding to the heat generated by electrical flow, and the heat conduction characteristics, the temperature distribution among various semiconductor power components is continuously optimized until the optimal thermal management effect is achieved. This optimization process usually includes adjusting the radiator design, optimizing the air flow path, selecting appropriate materials, and improving the heat conduction path, etc., to achieve the goal of minimizing thermal losses and maximizing system stability. The key to this step lies in being able to improve the thermal management efficiency of the system through repeated optimization, reduce the overheating risk, and ensure the long-term stable operation of semiconductor power components under different operating conditions through a reasonable heat distribution scheme, thereby improving the overall thermal simulation accuracy of semiconductor power components.

[0056] 2. The thermal simulation system of the semiconductor power component proposed by the present invention is generally composed of a semiconductor power component simulation module, a semiconductor component model heat conduction simulation module, a semiconductor electro-thermal coupling influence evaluation module, and a semiconductor component thermal simulation iterative optimization module, and can implement the thermal simulation method of any semiconductor power component described in the present invention. It is used to realize the thermal simulation method of semiconductor power components through the operation cooperation between computer programs running on each module. The internal structure of the system cooperates with each other, which can greatly reduce repetitive work and manpower input, and can quickly and effectively provide a more accurate and efficient thermal simulation process of semiconductor power components, thereby simplifying the operation process of the thermal simulation system of semiconductor power components. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Other features, objects, and advantages of the present invention will become more apparent by reading the detailed description of the non-limiting embodiments with reference to the following drawings:

[0058] Figure 1 It is a schematic diagram of the step flow of the thermal simulation method for the semiconductor power component of the present invention;

[0059] Figure 2 is Figure 1 a detailed schematic diagram of step S1 in

[0060] Figure 3 is Figure 1 a detailed schematic diagram of step S2 in Specific embodiments

[0061] The technical method of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0062] In addition, the accompanying drawings are only schematic diagrams of the present invention and are not necessarily drawn to scale. The same reference numerals in the figures denote the same or similar parts, and thus their repeated description will be omitted. Some of the block diagrams shown in the drawings are functional entities and do not necessarily correspond to physically or logically independent entities. The functional entities can be implemented in software form, or in one or more hardware modules or integrated circuits, or in different networks and / or processor methods and / or microcontroller methods.

[0063] It should be understood that although the terms "first", "second", etc. may be used here to describe various units, these units should not be limited by these terms. These terms are only used to distinguish one unit from another. For example, without departing from the scope of the exemplary embodiments, the first unit can be called the second unit, and similarly the second unit can be called the first unit. The term "and / or" used here includes any and all combinations of one or more of the listed associated items.

[0064] To achieve the above object, please refer to Figures 1 to 3 The present invention provides a thermal simulation method for a semiconductor power component, and the method includes the following steps:

[0065] Step S1: Obtain the geometric structure, material properties, and working characteristics corresponding to each semiconductor power component, and perform finite element simulation modeling according to the geometric structure corresponding to each semiconductor power component to generate a finite element model for each semiconductor power component;

[0066] Step S2: Perform a heat source distribution response analysis on the finite element models of each semiconductor power component based on the corresponding working characteristics of each semiconductor power component to generate a heat source distribution field corresponding to each semiconductor power component under different working conditions; perform a heat conduction simulation analysis on the heat source distribution field corresponding to each semiconductor power component under different working conditions based on the material properties corresponding to each semiconductor power component to obtain the heat transfer conduction temperature distribution field between each semiconductor power component under different working conditions;

[0067] Step S3: Construct an electrical model of the semiconductor component corresponding to different working conditions according to the corresponding working characteristics of each semiconductor power component, and perform an evaluation calculation on the influence of the heat transfer conduction temperature distribution field between each semiconductor power component under different working conditions based on the electrical model of the semiconductor component to obtain the influence loss of the heat generated by the electrical flow on the heat flow distribution under different working conditions;

[0068] Step S4: Obtain the environmental heat boundary conditions corresponding to each semiconductor power component under different working conditions, and perform a thermal simulation iteration optimization on the heat transfer conduction temperature distribution field between each semiconductor power component based on the environmental heat boundary conditions corresponding to each semiconductor power component under different working conditions and the influence loss of the heat generated by the electrical flow on the heat flow distribution to generate a simulation optimization result of the heat flow temperature distribution between each semiconductor power component.

[0069] In the embodiment of the present invention, please refer to Figure 1 As shown, it is a schematic diagram of the step flow of the thermal simulation method of the semiconductor power component of the present invention. In this example, the thermal simulation method of the semiconductor power component includes the following steps:

[0070] Step S1: Obtain the geometric structure, material properties, and working characteristics corresponding to each semiconductor power component, and perform a finite element simulation modeling according to the geometric structure corresponding to each semiconductor power component to generate a finite element model of each semiconductor power component;

[0071] In the embodiments of the present invention, by collecting and confirming the geometric structure and material properties of each semiconductor power component, which include geometric parameters such as the size, shape, and surface features of the component, as well as thermoelectric properties such as the thermal conductivity, electrical conductivity, and specific heat capacity of the material. This information can be obtained through actual measurement, product design drawings, or technical data manuals provided by the manufacturer. Also, by extracting the operating characteristic parameters of the semiconductor power component according to its operating conditions in actual use, these parameters include but are not limited to the operating temperature, thermal power loss, etc. of the component at different currents, voltages, and frequencies. It is necessary to set its operating conditions according to its actual operating environment (such as voltage, ambient temperature, load change, etc.). The specific operation can be carried out through a test bench, power test equipment, or computational simulation software (such as PSpice, LTspice, etc.) for parameter measurement and calculation. For each operating point, analyze the changes in its power loss and operating temperature to ensure accurate operating characteristic data can be obtained. Then, use CAD software (such as AutoCAD, SolidWorks, etc.) to model the geometric structure of the component to ensure that the accuracy of the model is consistent with the actual size. After the geometric modeling is completed, use finite element analysis (FEA) tools (such as ANSYS, COMSOL Multiphysics, etc.) to import the geometric structure of the component and perform finite element mesh generation. When generating the mesh, select an appropriate mesh size to ensure calculation accuracy while avoiding excessive computational overhead. Different regions may require different mesh densities to obtain more accurate results in thermal analysis and electrical simulation, forming the finite element models of each semiconductor power component, and finally generating the finite element models of each semiconductor power component.

[0072] Step S2: Based on the operating characteristics corresponding to each semiconductor power component, perform a heat source distribution response analysis on the finite element models of each semiconductor power component to generate the heat source distribution fields corresponding to each semiconductor power component under different operating conditions; based on the material properties corresponding to each semiconductor power component, perform a heat conduction simulation analysis on the heat source distribution fields corresponding to each semiconductor power component under different operating conditions to obtain the heat transfer conduction temperature distribution fields between each semiconductor power component under different operating conditions;

[0073] In the embodiments of the present invention, by calculating the heat source distribution based on the operating characteristics of each semiconductor power component (such as current, switching frequency, power loss, etc.), the heat source distribution is mainly generated by factors such as current flow, internal resistance, and heat loss of the semiconductor power component. Therefore, it is necessary to convert the electrical load conditions into a heat source distribution. The operating process of the component can be simulated by electro-thermal coupling simulation software (such as COMSOL Multiphysics, Fluent, etc.) to obtain a heat source density distribution map, thereby generating a corresponding heat source distribution field for each semiconductor power component under different operating conditions. At the same time, continue to perform a heat conduction simulation on the heat source distribution field to calculate the temperature distribution under different operating conditions according to the material thermal properties (such as thermal conductivity, specific heat capacity, etc.) obtained in the previous step, combined with the geometric structure information of the component. At this time, the thermal coupling effect between components needs to be considered, especially the heat conduction between power components. The finite element analysis is used to simulate the heat flow to obtain the temperature field distribution under different operating states. The key to this step is to accurately simulate the transfer process of the heat source and heat flow, and on this basis, obtain an accurate heat conduction temperature distribution field, and finally obtain the heat conduction temperature distribution field between each semiconductor power component under different operating conditions.

[0074] Step S3: Construct a corresponding electrical model of the semiconductor component under different operating conditions according to the operating characteristics corresponding to each semiconductor power component, and evaluate and calculate the influence of the heat generated by the electrical flow on the heat flow distribution based on the electrical model of the semiconductor component for the heat conduction temperature distribution field between each semiconductor power component under different operating conditions, so as to obtain the influence loss of the heat generated by the electrical flow on the heat flow distribution under different operating conditions;

[0075] In the embodiments of the present invention, based on the heat source distribution in the previous step, an electrical model of the semiconductor power module is established. The electrical model needs to incorporate the operating characteristics of semiconductor devices, such as current, voltage, switching frequency, and the electrical behavior of the devices, etc. This part can use circuit simulation tools (such as SPICE, MATLAB / Simulink, etc.) to establish the electrical model. This model needs to accurately reflect the current, voltage of each semiconductor power module under different load conditions and their influence on the temperature field. After the electrical model is established, based on the aforementioned heat conduction model, calculate the influence loss of the heat generated by the electrical flow on the temperature distribution. Specifically, consider the losses in the electrical flow (such as Joule losses caused by conductor resistance), and evaluate the influence of these heats on the heat source distribution and the heat conduction process. At this time, an electro-thermal coupling analysis tool (such as the Multiphysics module of COMSOL) can be used for electro-thermal coupling simulation. By combining the electrical model and the heat flow model, evaluate the correction of the heat generated by the electrical flow on the heat flow distribution, and an integrated heat flow distribution evaluation result can be obtained. This result includes the influence loss of the additional heat loss caused by the electrical load on the overall heat flow distribution, and finally obtains the influence loss of the heat generated by the electrical flow on the heat flow distribution under different operating conditions.

[0076] Step S4: Obtain the ambient thermal boundary conditions corresponding to each semiconductor power module under different operating conditions, and perform thermal simulation iteration optimization on the heat conduction temperature distribution field between each semiconductor power module based on the ambient thermal boundary conditions corresponding to each semiconductor power module under different operating conditions and the influence loss of the heat generated by the electrical flow on the heat flow distribution, so as to generate a heat flow temperature distribution simulation optimization result between each semiconductor power module.

[0077] In an embodiment of the present invention, by obtaining and defining the environmental thermal boundary conditions of each semiconductor power component under different working conditions, for example, ambient temperature, heat dissipation conditions, temperature distribution of the cooling system, etc., these thermal boundary conditions can be obtained through experimental data or environmental simulation models. Specifically, according to the cooling scheme of the actual application environment, such as natural convection, forced convection, liquid cooling or air cooling, the corresponding boundary conditions can be set, and then combined with the previous influence results of electrothermal distribution, a further thermal simulation is carried out on the thermal flux temperature distribution field of each semiconductor power component. At this time, in addition to considering the heat generated by the current, the environmental thermal boundary conditions and the mutual heat conduction influence between components need to be incorporated into the model. The thermal simulation needs to accurately solve the temperature distribution by using an iterative optimization method under the given environmental conditions to ensure that factors such as heat sources, heat fluxes, and boundary conditions are comprehensively considered. During the iterative optimization process of the thermal simulation, first, a preliminary simulation model is run, and then the mesh, boundary conditions, or other parameters are adjusted according to the calculation results, and the iteration is repeated until a convergent thermal distribution result is obtained. This process usually needs to be carried out through computer simulation software (such as ANSYS, Fluent, COMSOL, etc.), and the iterative process can be accelerated through custom scripts or optimization algorithms. Finally, an optimized simulation result of the thermal flux temperature distribution between each semiconductor power component is generated.

[0078] Further, step S1 includes the following steps:

[0079] Step S11: Obtain the geometric structures corresponding to each semiconductor power component, including the refined dimensions and appearance shapes corresponding to each semiconductor power component;

[0080] Step S12: Extract the material properties of the materials corresponding to each semiconductor power component according to the preset material database and the latest material performance literature to obtain the material properties corresponding to each semiconductor power component, including the thermal conductivity, specific heat capacity, and thermal expansion coefficient of each material corresponding to each semiconductor power component;

[0081] Step S13: Obtain the working characteristics corresponding to each semiconductor power component, including the working characteristic parameters corresponding to each semiconductor power component under different actual working conditions;

[0082] Step S14: Perform finite element simulation modeling according to the geometric structures corresponding to each semiconductor power component to generate finite element models of each semiconductor power component.

[0083] As an embodiment of the present invention, refer to Figure 2 shown in Figure 1 is a detailed step flow schematic diagram of step S1 in

[0084] Step S11: Obtain the geometric structures corresponding to each semiconductor power component, including the refined dimensions and appearance shapes corresponding to each semiconductor power component;

[0085] In the embodiment of the present invention, by conducting a detailed analysis of the physical geometric shapes of semiconductor power components (including power semiconductor chips, heat sinks, encapsulation materials, heat fins, heat conduction channels, etc.), in specific operations, the external shapes of various semiconductor power components can be modeled through precise three-dimensional scanning technology or by using CAD (Computer-Aided Design) software. For example, three-dimensional modeling software such as SolidWorks and AutoCAD can be used to accurately model the dimensions of each semiconductor power component to ensure the true restoration of its geometric shape. During the modeling process, special attention should be paid to the dimensions of the components, including but not limited to the length, width, height, thickness of the components, and the dimensions of corresponding holes, grooves, pads, and other refined features. For complex structural parts, such as heat fins and conductive contacts, their surface shapes and angles must be accurately depicted to ensure that the modeling results are completely consistent with the actual situation. In addition, for some semiconductor power components with irregular shapes, higher-precision geometric information can be obtained through CT scanning or digital imaging, and finally, the geometric structures corresponding to each semiconductor power component are obtained.

[0086] Step S12: Extract the material properties of the materials corresponding to each semiconductor power component according to the preset material database and the latest material performance literature, and obtain the material properties corresponding to each semiconductor power component, including the thermal conductivity, specific heat capacity, and thermal expansion coefficient of each material corresponding to each semiconductor power component;

[0087] In the embodiment of the present invention, the materials of each semiconductor power component are analyzed in detail by using the established material database and the latest material performance literature. At this time, material database software such as MatWeb, GrantaMaterials, and ASM Handbooks can be relied on to query the thermophysical properties of each material, such as thermal conductivity, specific heat capacity, and thermal expansion coefficient. Assuming that the selected semiconductor component uses common materials such as silicon, gallium nitride, or silicon carbide, the thermophysical parameters of these materials need to be extracted from the literature or database respectively. For example, the thermal conductivity of silicon is usually 150 W / m·K, the specific heat capacity is 0.7 J / g·K, and the thermal expansion coefficient is 2.6×10 6 / K. For new or specific alloy materials, it may be necessary to extract their characteristic data according to the latest literature. In addition, if the thermal properties of the material vary under different working temperatures or environmental conditions, the thermal conductivity and other thermophysical properties of the material at different temperatures should be calculated based on the temperature-dependent formula given in the literature, and finally, the material properties corresponding to each semiconductor power component are obtained.

[0088] Step S13: Obtain the working characteristics corresponding to each semiconductor power component, including the working characteristic parameters corresponding to each semiconductor power component under different actual working conditions;

[0089] In the embodiment of the present invention, by extracting the working characteristic parameters according to the working conditions of the semiconductor power component in actual use, these parameters include but are not limited to the working temperature, thermal power loss, etc. of the component under different currents, voltages, and frequencies. When obtaining these working characteristics, it can rely on actual experimental test data, or be extracted from the technical manuals of semiconductor components, the working conditions and performance parameters provided by manufacturers. Assuming that the analyzed semiconductor power component is used in high-power density applications (such as power conversion, power amplifiers, etc.), its working conditions need to be set according to its actual working environment (such as voltage, ambient temperature, load change, etc.). The specific operation can be carried out through a test bench, power test equipment, or computational simulation software (such as PSpice, LTspice, etc.) to measure and calculate the parameters. For each working point, analyze the changes in power loss and working temperature to ensure accurate working characteristic data can be obtained, and finally obtain the working characteristics corresponding to each semiconductor power component.

[0090] Step S14: Perform finite element simulation modeling according to the geometric structure corresponding to each semiconductor power component to generate a finite element model for each semiconductor power component.

[0091] In the embodiment of the present invention, the geometric structure obtained in the previous step is imported into finite element simulation software such as ANSYS, COMSOL Multiphysics, Abaqus, etc., and preliminary modeling for thermal simulation analysis is carried out. After importing the geometric model, first perform mesh division on the model. The quality of mesh division directly affects the accuracy and calculation efficiency of the simulation results. Therefore, appropriate element types and sizes should be selected during mesh division to ensure the reliability of the simulation results. For regions with large thermal gradients (such as parts with high current density, heat source concentration areas, etc.), finer meshes should be used. The simulation results will serve as the basis for subsequent thermal management design, and finally generate a finite element model for each semiconductor power component.

[0092] Further, step S2 includes the following steps:

[0093] Step S21: Determine the working load conditions corresponding to each semiconductor power component through the working characteristic simulation of each semiconductor power component, including power loss, switching loss, heat convection, and heat radiation working load conditions;

[0094] Step S22: Based on the workload conditions corresponding to each semiconductor power component, perform thermal response simulation modeling on the finite element models of each semiconductor power component to generate thermal response simulation models corresponding to each semiconductor power component under different working conditions;

[0095] Step S23: Perform heat source distribution response analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions to generate heat source distribution fields corresponding to each semiconductor power component under different working conditions;

[0096] Step S24: Based on the material properties corresponding to each semiconductor power component, perform heat conduction simulation analysis on the heat source distribution fields corresponding to each semiconductor power component under different working conditions to obtain the heat transfer conduction temperature distribution fields between each semiconductor power component under different working conditions.

[0097] As an embodiment of the present invention, refer to Figure 3 shown, for Figure 1 the detailed step flow schematic diagram of step S2 in

[0098] Step S21: Determine the workload conditions corresponding to each semiconductor power component through the working characteristic simulation of each semiconductor power component, including power loss, switching loss, heat convection, and heat radiation workload conditions;

[0099] In the embodiment of the present invention, through the simulation analysis of the working characteristics of each semiconductor power component, each semiconductor power component (such as MOSFET, IGBT, diode, etc.) will experience different workload conditions during actual operation, mainly including power loss, switching loss, heat convection, and heat radiation, etc. Use circuit simulation tools (such as SPICE, PSpice, etc.) to simulate semiconductor components. By setting conditions such as the working current, working frequency, and input voltage of the components, the power loss of each component under these conditions is calculated through simulation. For the calculation of switching loss, it is necessary to analyze the voltage and current waveforms during the switching process and combine the characteristics of semiconductor materials to calculate the energy loss during the switching process. At the same time, the workload conditions of heat convection and heat radiation need to be combined with the design of the radiator and the environmental temperature conditions, and use thermal simulation tools (such as COMSOL, ANSYS, etc.) to simulate the heat loss of the components to obtain the power loss, switching loss, heat convection, and heat radiation and other workload conditions of each component under different working conditions, and finally determine the workload conditions corresponding to each semiconductor power component.

[0100] Step S22: Based on the workload conditions corresponding to each semiconductor power component, perform thermal response simulation modeling on the finite element models of each semiconductor power component to generate the thermal response simulation models corresponding to each semiconductor power component under different working conditions;

[0101] In the embodiments of the present invention, by using the previously obtained workload conditions as input data, a finite element model of each semiconductor power component is constructed. During the modeling process, first, an accurate three-dimensional model needs to be created in a thermal simulation software (such as ANSYS, COMSOL, etc.), ensuring that details such as the geometric structure, material properties, and interfaces of the component are included. Next, data such as power loss and switching loss obtained from the previous analysis are loaded into the finite element model as heat sources. For different workload conditions, simulation modeling needs to be carried out separately to obtain the thermal response characteristics of the component under each working condition. During the thermal response simulation process, various heat transfer methods such as heat conduction, convection, and radiation are considered, and the heat field distribution and temperature change of the component are simulated through numerical calculation. Through this simulation modeling, the temperature rise and heat distribution of the component can be evaluated under different working conditions, and finally, the thermal response simulation models corresponding to each semiconductor power component under different working conditions are generated.

[0102] Step S23: Perform heat source distribution response analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions to generate the heat source distribution fields corresponding to each semiconductor power component under different working conditions;

[0103] In the embodiments of the present invention, after the construction of the thermal response simulation model is completed, further heat source distribution response analysis is carried out. This analysis is mainly to solve how to accurately obtain the heat source distribution of each semiconductor power component under different working conditions. By using thermal simulation software to calculate the detailed temperature distribution of each component under different working conditions, the heat source distribution in each region is analyzed emphatically. By analyzing the conduction of the heat source on the surface, inside of the component, and its contact parts with the outside (such as heat sinks, enclosures, etc.), the specific distribution pattern of the heat source in each region is obtained. During the analysis process, the change law of the heat source under different working states is considered, such as the transient heat source change during the switching process and the steady-state heat source distribution during the long-term working state. This analysis helps to understand the hot spots of the heat source distribution and possible heat dissipation bottlenecks, and finally generates the heat source distribution fields corresponding to each semiconductor power component under different working conditions.

[0104] Step S24: Based on the material properties corresponding to each semiconductor power component, perform thermal conduction simulation analysis on the heat source distribution fields corresponding to each semiconductor power component under different working conditions to obtain the heat transfer conduction temperature distribution fields between each semiconductor power component under different working conditions.

[0105] In the embodiment of the present invention, based on the obtained heat source distribution field, the next step is to perform heat conduction simulation analysis. First, the material properties of each semiconductor power component need to be input into the heat simulation tool, especially the thermophysical parameters such as thermal conductivity and specific heat capacity. The accuracy of these parameters is crucial for heat conduction analysis. Then, heat conduction analysis is carried out through a heat conduction simulation tool (such as ANSYS, COMSOL, etc.) to calculate the temperature distribution caused by the heat source of the component under different working conditions. The heat conduction paths considered in the simulation model include not only the heat conduction of the semiconductor component itself but also the heat conduction with components such as heat sinks, housings, and connectors. The goal during the simulation process is to calculate the heat flux distribution of each component under different working load conditions, accurately capture the heat transfer conduction between each semiconductor power component, obtain the temperature gradient and heat flux field distribution between the components, and comprehensively evaluate the heat conduction efficiency. During this process, it is necessary to ensure the accurate calculation of the heat flux in each heat source area to avoid missing potential high-temperature areas or heat dissipation bottlenecks, and finally obtain the heat transfer conduction temperature distribution field between each semiconductor power component under different working conditions.

[0106] Further, step S23 includes the following steps:

[0107] Step S231: Evaluate and analyze the thermal performance changes of the thermal response simulation models corresponding to each semiconductor power component under different working conditions to obtain the thermal performance changes corresponding to each semiconductor power component under different working conditions, including the heat dissipation capacity and thermal stability of the component;

[0108] In the embodiment of the present invention, by evaluating the thermal response of each semiconductor power component under different working conditions, the core of this step is to evaluate the thermal performance changes of each semiconductor power component in different environments, including heat dissipation capacity and thermal stability, by establishing a thermal simulation model for each semiconductor power component. First, select a suitable thermal simulation tool, such as ANSYS Icepak or Flotherm, to perform thermal simulation modeling. When constructing the model, consider the geometric structure, material properties of the semiconductor component, and its working conditions (such as input voltage, power load, etc.). Use these tools to perform thermal analysis to obtain parameters such as the temperature distribution, heat flux path, and thermal conductivity of the component under different working conditions. These parameters help analyze the heat dissipation capacity (such as heat flux density) and thermal stability (i.e., whether it can maintain a stable temperature under different working conditions) of the component. Visualize the thermal performance changes of each semiconductor power component, and finally obtain the thermal performance changes corresponding to each semiconductor power component under different working conditions, including the heat dissipation capacity and thermal stability of the component.

[0109] Step S232: Based on the thermal performance changes of each semiconductor power component under different operating conditions, perform a transient numerical simulation of heat in the corresponding thermal response simulation model to obtain the instantaneous heat response change amount of each semiconductor power component under different operating conditions;

[0110] In the embodiment of the present invention, through the transient numerical simulation of heat based on the previously obtained thermal response simulation model, this process uses thermal simulation software (such as COMSOL Multiphysics or ANSYS Fluent) to dynamically simulate the thermal response of the component under specific operating conditions. First, set the boundary conditions of the thermal response simulation model, including environmental temperature, heat source input power, cooling conditions, etc. Then, perform a transient analysis in the time domain by selecting an appropriate numerical method. Usually, the finite element method (FEM) or the finite volume method (FVM) is used to simulate the change of instantaneous heat. These simulations can provide the instantaneous temperature change curve of the component at different time points, so as to analyze the change trend of its thermal response over time. Through numerical simulation, the temperature change, heat accumulation, and thermal stability of the component under actual workload changes can be obtained, and its thermal performance under transient operating conditions can be evaluated. Finally, the instantaneous heat response change amount of each semiconductor power component under different operating conditions is obtained.

[0111] Step S233: Perform a local heat accumulation analysis on the instantaneous heat response change amount of each semiconductor power component under different operating conditions to obtain the local thermal response accumulation distribution of each semiconductor power component under different operating conditions;

[0112] In the embodiment of the present invention, through the local heat accumulation analysis based on the previously obtained instantaneous heat response data, the goal of this step is to find the heat accumulation areas inside the component by analyzing the local heat accumulation distribution of each semiconductor power component under different operating conditions. First, extract the instantaneous heat response data at different positions on the surface and inside the component from the transient simulation results, and calculate the heat accumulation situation of each local area by using the heat conduction model. Pay attention to the heat accumulation in the key thermally sensitive areas. In this process, physical parameters such as the heat conduction coefficient and the thermal diffusivity are used for numerical calculation. Through the heat accumulation analysis, it can be determined which areas are prone to excessive temperature accumulation, resulting in thermal failure or performance degradation. Finally, the local thermal response accumulation distribution of each semiconductor power component under different operating conditions is obtained.

[0113] Step S234: Use hydrodynamic techniques to perform heat flux simulation analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions, so as to generate the heat flux simulation fields corresponding to each semiconductor power component under different working conditions; perform statistical analysis on the heat flux density distribution of the heat flux simulation fields corresponding to each semiconductor power component under different working conditions, and obtain the heat flux density distributions corresponding to each semiconductor power component under different working conditions.

[0114] In the embodiment of the present invention, heat flux simulation analysis is performed on the semiconductor power component through hydrodynamic techniques. This step uses hydrodynamic (CFD) software (such as ANSYS Fluent, OpenFOAM) to simulate the heat flux transmission process of the component under different working conditions. First, based on the previous thermal performance simulation model, a heat flux simulation model of the component is constructed, and boundary conditions (such as air velocity, cooling method, external environment temperature, etc.) are set, so as to generate the heat flux simulation fields corresponding to each semiconductor power component under different working conditions. Then, using the hydrodynamic simulation method, by solving heat transfer processes such as heat conduction, convection, and radiation, the heat flux field distribution is obtained. During the analysis process, the interaction between each boundary surface and the cooling fluid needs to be set in detail, and the influence of different heat sources is considered. By calculating the heat flux density at each position, the heat dissipation effect and cooling efficiency can be evaluated, possible hot spot areas can be identified, statistical analysis is performed on the heat flux density distribution, and the distribution characteristics of the heat flux in each part of the component are understood. Finally, the heat flux density distributions corresponding to each semiconductor power component under different working conditions are obtained.

[0115] Step S235: Based on the local thermal response cumulative distribution and the heat flux density distribution corresponding to each semiconductor power component under different working conditions, perform heat source distribution response analysis on the corresponding thermal response simulation model, so as to generate the heat source distribution fields corresponding to each semiconductor power component under different working conditions.

[0116] In the embodiments of the present invention, based on the analysis results of the local heat response accumulation distribution and the heat flux density distribution, a further heat source distribution response analysis is carried out. This analysis aims to determine the heat source distribution field of each semiconductor power component under different working conditions and provide a basis for further heat dissipation design. First, by combining the analysis results of the previous steps, the heat response accumulation and the heat flux density of each region are combined to analyze which regions bear the main heat load. Using the heat source distribution model, through numerical fitting of the relationship between the heat flux and the temperature, the spatial distribution of the heat source is obtained. This process usually adopts the method of combining the heat source model and the heat flow equation to simulate the specific position and intensity of the heat source inside the semiconductor component, generate the heat source distribution field, be used to evaluate whether the heat source distribution inside the component is uniform, and optimize the design of the thermally non-uniform regions. Through this process, potential heat risk regions of the component can be identified at the design stage, so as to avoid performance degradation or thermal failure caused by non-uniform heat source distribution in practical applications. Finally, the corresponding heat source distribution fields of each semiconductor power component under different working conditions are generated in response.

[0117] Further, step S24 includes the following steps:

[0118] Step S241: Conduct a heat source distribution characteristic analysis on the heat source distribution fields corresponding to each semiconductor power component under different working conditions to obtain the heat source distribution characteristics corresponding to each semiconductor power component under different working conditions, including the heat source distribution intensity, the heat source distribution direction, and the heat source distribution frequency;

[0119] In the embodiments of the present invention, by modeling different types of semiconductor power components (such as power diodes, power transistors, IGBTs, etc.), the heat source distribution fields generated by them under different working conditions (such as different loads, switching frequencies, input voltages, etc.) are obtained. By using electromagnetic simulation software, such as ANSYS Electronics or COMSOL Multiphysics, the coupled thermoelectric model is used to calculate the current distribution, voltage distribution, and power loss of the power component under different working conditions. These simulation results can provide the heat source distribution field of the component in the actual working environment, including characteristics such as the heat source distribution intensity, the heat source distribution direction, and the heat source distribution frequency. The heat source distribution intensity is determined by the power loss inside the component (such as switching loss and conduction loss). The heat source distribution direction is usually consistent with the current flow direction, while the heat source distribution frequency is closely related to the switching frequency and the working cycle. Through data processing and visualization tools (such as Matlab or ParaView), the key characteristics of the heat source distribution are analyzed and extracted, and finally the heat source distribution characteristics corresponding to each semiconductor power component under different working conditions are obtained, including the heat source distribution intensity, the heat source distribution direction, and the heat source distribution frequency.

[0120] Step S242: Obtain the material electrical and thermal properties corresponding to each semiconductor power component, and combine the external environmental conditions to perform a heat source power dispersion simulation on the heat source distribution characteristics corresponding to each semiconductor power component under different working conditions, so as to generate the heat source power divergence distribution corresponding to each semiconductor power component under different working conditions;

[0121] In the embodiment of the present invention, by obtaining the material electrical and thermal properties of each semiconductor power component, including thermal conductivity, specific heat capacity, electrical conductivity, density, etc., these parameters can be obtained from a material database (such as Matweb, Thermo-Calc, etc.) or determined according to actual test data. At the same time, external environmental conditions such as environmental temperature, cooling method, air fluidity, etc. also need to be considered. These conditions have an important impact on the heat source power dispersion. By means of CFD (Computational Fluid Dynamics) software (such as ANSYS Fluent or OpenFOAM) for simulation, combined with the geometric shape and material characteristics of the semiconductor component, through the modeling of the external environment (such as cooling systems like heat sinks, fans, heat dissipation pipes, etc.), the calculation of the heat source power dispersion is realized. The key in this process is to input the heat source distribution characteristics into the simulation and apply the heat source power equation to simulate the heat propagation and dispersion process under different working conditions. The simulation results can show the heat source power divergence distribution of each semiconductor power component under different working conditions, and finally obtain the heat source power divergence distribution corresponding to each semiconductor power component under different working conditions.

[0122] Step S243: Based on the thermal conductivity corresponding to each semiconductor power component, perform a heat conduction simulation analysis on the heat source power divergence distribution corresponding to each semiconductor power component under different working conditions to obtain the heat conduction simulation field between each semiconductor power component under different working conditions;

[0123] In the embodiments of the present invention, by using the known heat source power divergence distribution, heat conduction simulation analysis is carried out. First, the thermal conductivity of the semiconductor power components is modeled (the thermal conductivity data is from the material library or measured through experiments), and using finite element analysis (FEA) software, such as ANSYS Mechanical or COMSOL Multiphysics, the heat conduction of the components is simulated in detail. According to the different thermal conductivities, the propagation paths of heat flow inside the semiconductor materials and between different components are simulated. In specific implementation, a complete three-dimensional model needs to be constructed, considering the thermal coupling effect between components, and the heat conduction is accurately calculated. During the simulation process, the heat equation (such as the Fourier heat conduction equation) is used for numerical solution to calculate the intensity, flow direction, and distribution of the heat flow. Through these simulations, the heat conduction simulation field between each semiconductor power component under different working conditions can be obtained, reflecting the flow and distribution of thermal energy. The core of this step is to finally obtain the heat conduction simulation field between each semiconductor power component under different working conditions by accurately simulating the heat exchange process inside the semiconductor and between components.

[0124] Step S244: Based on the material properties corresponding to each semiconductor power component, perform a heat conduction temperature distribution simulation on the heat conduction simulation field between each semiconductor power component under different working conditions to obtain the heat conduction temperature distribution field between each semiconductor power component under different working conditions.

[0125] In the embodiments of the present invention, by simulating the temperature distribution between each semiconductor power component based on the heat conduction simulation field, by inputting the heat flow data obtained in the previous step and the material properties of each component (such as thermal conductivity, specific heat capacity, etc.), the temperature distribution is simulated using the heat conduction equation. Using multi-physics simulation software such as ANSYS or COMSOL, by numerically solving the heat equation, considering factors such as the thermal diffusion effect, heat convection, and radiation of the material, a detailed temperature distribution simulation is carried out. During the specific implementation process, the aforementioned heat conduction simulation field needs to be combined with the geometric model of the component to calculate the three-dimensional temperature field. The simulation results will show the temperature distribution of each semiconductor power component under different working conditions, including the highest temperature, the lowest temperature, and the temperature gradient, and finally obtain the heat conduction temperature distribution field between each semiconductor power component under different working conditions.

[0126] Further, step S244 includes the following steps:

[0127] Obtain the material thermal conductivity difference between each semiconductor power component through the thermal conductivity corresponding to each semiconductor power component;

[0128] In the embodiments of the present invention, by analyzing the differences in the material thermal conductivities of each semiconductor power component, it is first necessary to collect the thermal conductivity data related to each semiconductor material. The specific operation is as follows: for each power component, first consult the thermal conductivity properties of its raw materials, which can usually be obtained from literature or material databases. For example, common semiconductor materials such as silicon (Si), gallium nitride (GaN), and silicon carbide (SiC) have different thermal conductivity values. The thermal conductivity of silicon is approximately 150 W / m·K, while that of silicon carbide can reach 400 W / m·K. Secondly, conduct thermal conductivity calibration for different power components. According to different working environments, temperature, and pressure conditions, test the thermal conductivity through experimental means, and correct the thermal conductivity under the actual use environment in combination with the existing material property database. Specifically, the measurement data can be obtained through experimental methods such as a heat flux meter or a laser flash method (LFA). Further calculate the differences in the material thermal conductivities between different components, and finally obtain the differences in the material thermal conductivities between each semiconductor power component.

[0129] Preferably, based on the differences in the material thermal conductivities between each semiconductor power component, solve the thermal conduction temperature gradient changes in the thermal conduction simulation field between each semiconductor power component under different working conditions to obtain the distribution of the thermal conduction temperature gradient changes between each semiconductor power component under different working conditions.

[0130] In the embodiments of the present invention, by establishing a thermal conduction model between semiconductor power components according to the previously obtained thermal conductivity differences, first use finite element analysis (FEA) software (such as ANSYS or COMSOL Multiphysics) to construct the simulation field of the entire thermal conduction, define the geometric shapes, material properties, and thermal boundary conditions of each power component. In the simulation, it should be considered that the changes in the heat flow paths caused by the differences in the thermal conductivities of each semiconductor power component will directly affect the distribution of the heat flow and the changes in the temperature gradient. By setting different working conditions, such as power density, working temperature, heat dissipation methods (such as natural convection, forced convection, liquid cooling, or air cooling), etc., calculate using the heat conduction equation (Fourier's law). By solving the temperature field and the heat flow field, obtain the distribution of the thermal conduction temperature gradient changes between each semiconductor power component, reflecting the changes in temperature along the component interfaces and inside during the thermal conduction process, and finally obtain the distribution of the thermal conduction temperature gradient changes between each semiconductor power component under different working conditions.

[0131] Preferably, according to the change distribution of the thermal conduction temperature gradient among the semiconductor power components under different working conditions, the difference in the heat flow temperature change corresponding to different regions among the semiconductor power components is obtained, and based on the specific heat capacity and the coefficient of thermal expansion corresponding to each semiconductor power component, the thermal stress distribution analysis is carried out on the difference in the heat flow temperature change corresponding to different regions among the semiconductor power components, so as to obtain the thermal stress distribution among the semiconductor power components under different working conditions;

[0132] In the embodiment of the present invention, by using the previously obtained thermal conduction temperature gradient distribution, the difference in the heat flow temperature generated by the temperature change in each region of the material is further analyzed. Specifically, a thermal stress model can be used to analyze the stress distribution between different materials and regions. For each power component, based on its specific heat capacity (the amount of heat required per unit mass) and the coefficient of thermal expansion (the expansion characteristic of the material when the temperature changes), combined with the temperature gradient and the heat flow difference, the stress calculation is carried out using Lame's formula or the linear thermal stress formula. For example, when a semiconductor power component is heated, if its temperature distribution is uneven, uneven thermal expansion will occur, which will cause internal stress differences. These stresses will concentrate inside the component and at the interface between the component and other materials, resulting in thermal failure or mechanical damage of the material. During this process, the specific calculation formula can be σ = E·α·ΔT, where σ is the thermal stress, E is the elastic modulus of the material, α is the coefficient of thermal expansion of the material, and ΔT is the temperature change. In this step, a calculation software is used to simulate the thermal stress field and output the stress distribution under different working conditions, and finally the thermal stress distribution among the semiconductor power components under different working conditions is obtained.

[0133] Preferably, according to the change distribution of the thermal conduction temperature gradient and the thermal stress distribution among the semiconductor power components under different working conditions, a temperature distribution simulation is carried out to obtain the heat transfer conduction temperature distribution field among the semiconductor power components under different working conditions.

[0134] In the embodiment of the present invention, by combining the heat conduction temperature gradient distribution and the thermal stress distribution obtained from the previous analysis, the temperature distribution simulation is further carried out. The specific operation is to use the existing heat conduction and thermal stress simulation data, adopt the thermal-structural coupling simulation method, combine the heat conduction equation and the structural mechanics equation, and simulate the temperature change of each semiconductor power component under different working conditions and its interaction with thermal stress. During the simulation process, the calculation tools used can be simulation software such as ANSYS and COMSOL for thermal-structural coupling analysis, accurately calculate the temperature distribution field and stress field under different conditions. During the simulation process, the change of the temperature distribution is not only affected by the heat flow, but also affected by the mechanical deformation generated by the thermal stress. Through this comprehensive simulation, the final temperature field data can be obtained, showing the temperature change of each semiconductor power component under different working conditions, so as to output the result as an accurate heat transfer conduction temperature distribution field, and finally obtain the heat transfer conduction temperature distribution field between each semiconductor power component under different working conditions.

[0135] Further, step S3 includes the following steps:

[0136] Step S31: Construct the corresponding electrical model of the semiconductor component under different working conditions according to the working characteristics of each semiconductor power component;

[0137] In the embodiment of the present invention, by analyzing in detail the working characteristics of each semiconductor power component (for example: IGBT, MOSFET, diode, etc.), these working characteristics include switching characteristics, voltage-current characteristics, on-resistance in the on state, switching loss, reverse recovery characteristics, etc., and by using electrical simulation software (for example: SPICE, PLECS or Ansys Simplorer) to model each semiconductor component, these models consider the working state of the component under different working conditions (such as temperature, voltage, current, etc.). For example, under high temperature conditions, the on-resistance of the semiconductor will increase, thus affecting the efficiency of current flow. By importing actual test data or obtaining relevant characteristic data from the parameters provided by the manufacturer, the electrical model is calibrated to ensure the accuracy and feasibility of the model under different working conditions. This electrical model not only needs to reflect the static characteristics of the component, but also needs to accurately simulate the dynamic characteristics to ensure that the switching process, transient response, etc. of the semiconductor component during the simulation process can be truly restored, and finally the corresponding electrical model of the semiconductor component under different working conditions is constructed.

[0138] Step S32: Obtain the electrical flow path between each semiconductor power component under different working conditions through the electrical model of the semiconductor component corresponding to different working conditions;

[0139] In an embodiment of the present invention, by analyzing the constructed electrical model, it is further determined how current flows between each semiconductor power component under different working conditions. A circuit system model including all power components is built using circuit simulation software (such as SPICE or MATLAB / Simulink). The electrical models of each semiconductor power component are connected, and different working conditions (such as input voltage, load current, switching frequency, etc.) are set. According to the electrical simulation results, the current flow path in the circuit can be clearly seen. For example, under certain working conditions, the current will flow through a specific path through a specific semiconductor component, or some components are in the switching state while another part is in the conducting state. During the simulation process, the system will calculate the current value and voltage drop when the current flows through each component, and further obtain the electrical flow path, and finally obtain the electrical flow path between each semiconductor power component under different working conditions.

[0140] Step S33: Conduct a statistical analysis of the electrical load and current density of the electrical flow path between each semiconductor power component under different working conditions to obtain the electrical load and current density at the flow position of each semiconductor power component under different working conditions.

[0141] In an embodiment of the present invention, by analyzing in detail the electrical flow path of each semiconductor power component, the magnitude and direction of the current flowing through each component are calculated, and based on the simulation results, the electrical load loss and current density of each semiconductor component under different working conditions are further analyzed. Among them, the electrical load loss can be calculated by the formula κ = I 2 R, and the current density can be calculated by the formula J = I / A, where I is the current passing through the component, R is the resistance of the component, and A is the effective load-bearing area of the component. Using simulation tools (such as COMSOL Multiphysics or Ansys Maxwell), the current density analysis of each semiconductor component can be carried out to obtain the electrical load at each flow position. For example, under high-load conditions, the current density of some components will increase significantly, thereby affecting the thermal characteristics and reliability of the components. By statistically analyzing the electrical loads under different working conditions, it can be identified which components in the system face greater electrical loads, and finally the electrical load and current density at the flow position of each semiconductor power component under different working conditions are obtained.

[0142] Step S34: Based on the electrical load and current density at the flow position of each semiconductor power component under different working conditions, use the calculation formula for evaluating the influence of electrothermal distribution to evaluate and calculate the electrothermal distribution influence of the heat conduction temperature distribution field between each semiconductor power component under different working conditions, so as to obtain the influence loss of the heat generated by the electrical flow on the heat flow distribution under different working conditions.

[0143] In the embodiment of the present invention, by combining the heat flux distribution position parameter, time variable parameter, semiconductor power component material density, semiconductor power component material specific heat capacity, heat generated by electrical flow, gradient operator, electrical load, heat gradient generated by electricity, semiconductor power component material resistivity, current density, and related parameters, a suitable calculation formula for evaluating the influence of electrothermal distribution is constructed to calculate and evaluate the influence of electrothermal distribution on the heat transfer conduction temperature distribution field among semiconductor power components under different working conditions, so as to quantitatively calculate the heat loss of the heat flux distribution caused by the heat generated by electrical flow, and finally obtain the influence loss of the heat generated by electrical flow on the heat flux distribution under different working conditions.

[0144] Further, the calculation formula for evaluating the influence of electrothermal distribution in step S34 is specifically:

[0145]

[0146] In the formula, Q loss (r,t) is the influence loss of the heat generated by electrical flow on the heat flux distribution at position r and time t, r is the heat flux distribution position parameter, t is the time variable parameter, ρ is the semiconductor power component material density, C p is the semiconductor power component material specific heat capacity, T(r,t) is the heat generated by electrical flow corresponding to the semiconductor power component at position r and time t, is the gradient operator, κ(r) is the electrical load of the semiconductor power component at position r, is the heat gradient generated by electricity corresponding to the semiconductor power component at position r and time t, ρ c is the semiconductor power component material resistivity, J(r,t) is the current density corresponding to the semiconductor power component at position r and time t, and η is the correction coefficient of the influence loss.

[0147] The present invention obtains a calculation formula for evaluating the influence of electrothermal distribution through the use of a specific mathematical model and verification, which is used to calculate and evaluate the influence of electrothermal distribution on the heat transfer conduction temperature distribution field among semiconductor power components under different working conditions. This calculation formula for evaluating the influence of electrothermal distribution can accurately evaluate the temperature field change under different working conditions by calculating the influence of the heat generated by electrical flow (including resistance heating, heat conduction, and heating effects caused by current density) on the heat distribution of semiconductor power components, which is crucial for the design of the thermal management system and helps to reduce the performance degradation or failure risk caused by overheating. The calculation formula for evaluating the influence of electrothermal distribution combines the coupling effects of thermotics and electricity. In the formula, ρ c J 2 (r,t) term reflects the Joule heating effect when current passes through the semiconductor, which is crucial for high-power applications, and represents the response of thermal conductivity to the temperature gradient. Combining these factors can more comprehensively reflect the change of heat flux. The coupling of these multi-physical fields makes the distribution of the temperature field not only affected by the heat source, but also takes into account the influence of electrical characteristics on the conduction of heat flux, thus more realistically simulating the thermal behavior under actual working conditions. Secondly, the term in the formula considers the thermal response of semiconductor materials under time variation, reflecting the dynamic process of heat accumulation and dissipation. This is very important for evaluating the transient thermal behavior of the system (such as start-up, load change, etc.). For example, under rapidly changing working conditions, the thermal response of the system will be delayed or accumulated, resulting in local overheating. At this time, dynamic thermal evaluation is very crucial and can predict potential thermal management problems in advance. In addition, by introducing a correction factor, non-ideal factors that may exist in the thermal management process (such as heat dissipation environment, external cooling conditions, etc.) can be taken into account. The introduction of this term makes the evaluation more accurate and can cover the system-level heat loss, which is crucial for the thermal management strategy of the entire power component. In practical applications, the value of the correction factor can be adjusted according to experimental data or simulation results to make the calculation model more in line with the actual working conditions. To sum up, the formula fully considers the influence loss Q loss (r, t) of the heat generated by the electrical flow at position r and time t on the heat flux distribution, the heat flux distribution position parameter r, the time variable parameter t, the material density ρ of the semiconductor power component, and the specific heat capacity C p of the semiconductor power component. The heat generated by the electrical flow corresponding to the semiconductor power component at position r and time t is T(r, t), and the gradient operator The electrical load χ(r) of the semiconductor power component at position r, and the gradient of the heat generated by the electricity corresponding to the semiconductor power component at position r and time t The resistivity ρ of the semiconductor power component material c , the current density J(r, t) corresponding to the semiconductor power component at position r and time t, the correction factor η affecting the loss, and the mutual correlation relationship between the influence loss Q loss (r, t) of the heat generated by the electrical flow at position r and time t on the heat flux distribution and the above parameters constitutes a functional relationship This formula can realize the evaluation and calculation process of the electro-thermal distribution influence on the heat transfer conduction temperature distribution field between semiconductor power components under different working conditions. At the same time, by introducing the correction factor η of the influence loss, it can be adjusted according to the error situation that appears in the calculation process, thereby improving the accuracy and applicability of the electro-thermal distribution influence evaluation calculation formula.

[0148] Further, step S4 includes the following steps:

[0149] Step S41: Obtain the ambient thermal boundary conditions corresponding to each semiconductor power component under different working conditions, including air flow, coolant flow, and ambient temperature boundary conditions;

[0150] In the embodiment of the present invention, by obtaining the ambient thermal boundary conditions of the semiconductor power component according to the specific working scenario of the semiconductor power component, this process first requires a detailed analysis of the working conditions of the semiconductor power component. The working conditions include the power output of the component, the load condition, and the fluid dynamic characteristics of the surrounding environment, etc. The ambient thermal boundary conditions include factors such as air flow, coolant flow, and ambient temperature. When specifically implemented, it is possible to analyze the flow rate, flow direction, turbulence intensity of air or coolant, and the temperature field of the coolant through experimental means or based on the CFD (Computational Fluid Dynamics) simulation method. During this process, the temperature and flow conditions of the surrounding environment of the component are measured in real time through a thermal sensor to obtain the data of the ambient temperature and the coolant temperature, and then through simulation tools such as ANSYS Fluent, etc., to further obtain the detailed distribution of the ambient thermal boundary under different loads, and finally obtain the ambient thermal boundary conditions corresponding to each semiconductor power component under different working conditions.

[0151] Step S42: Perform numerical correction of heat exchange according to the ambient thermal boundary conditions corresponding to each semiconductor power component under different working conditions to obtain the heat exchange correction coefficients between each semiconductor power component and the surface environment under different working conditions;

[0152] In the embodiment of the present invention, by performing numerical correction of heat exchange according to the previously obtained ambient thermal boundary conditions, first calculate the actual heat exchange coefficient through the heat exchange process model between the fluid and the surface of the component. Commonly used models include various heat transfer methods such as natural convection, forced convection, and radiation. Through CFD simulation, establish a heat exchange model between the surface of the semiconductor power component and the surrounding environment, and combine conditions such as the power output of the component and the coolant flow to calculate the actual heat flow. At this time, a numerical simulation software (such as COMSOL Multiphysics, etc.) can be used to correct the heat exchange coefficient between the surface of the component and the environment. During this process, it is necessary to determine the calibration value of the heat exchange coefficient by comparing the simulation results with the experimental measurement data to ensure that the heat exchange model and coefficient adopted conform to the actual working environment, and finally obtain the heat exchange correction coefficients between each semiconductor power component and the surface environment under different working conditions.

[0153] Step S43: Based on the heat exchange correction coefficients between each semiconductor power component and the surface environment under different working conditions, perform thermal flow dynamic optimization on the corresponding heat conduction paths in the heat conduction temperature distribution field between each semiconductor power component to generate the heat conduction optimization paths corresponding to each semiconductor power component under different working conditions;

[0154] In an embodiment of the present invention, to perform dynamic thermal optimization on the corresponding heat conduction paths within the heat transfer temperature distribution field between each semiconductor power component by using the heat exchange correction coefficient obtained based on a previous correction, it is first necessary to establish a heat conduction model including multiple semiconductor power components in a simulation software. For each power component, calculate the temperature distribution inside it according to its power output, operating conditions, and environmental heat exchange coefficient. Through an optimization algorithm (such as a genetic algorithm or a particle swarm optimization algorithm), perform dynamic optimization on the heat flow path to ensure that heat can be effectively distributed among the components and avoid overheating areas. During specific operation, perform finite element analysis (FEA) through a numerical simulation tool to simulate the conduction process of heat flow between each semiconductor power component, optimize the heat flow path, reduce the resistance of the heat flow, optimize the heat conduction efficiency. The optimized heat flow path can ensure that the temperature distribution of the entire system reaches the optimal state, and finally generate the corresponding optimized heat conduction paths for each semiconductor power component under different operating conditions.

[0155] Step S44: Perform dynamic thermal loss simulation analysis on the heat transfer temperature distribution field between each semiconductor power component based on the influence loss of the heat generated by the electrical flow of each semiconductor power component under different operating conditions on the heat flow distribution, to obtain the corresponding thermal loss accumulation distribution of each semiconductor power component under different operating conditions;

[0156] In an embodiment of the present invention, by considering the influence of the heat generated by the electrical flow on the entire heat flow distribution, each semiconductor power component generates heat (resistive loss) due to the current flow during operation, and this heat will change the heat flow distribution. To accurately simulate the influence of thermal loss, first calculate the heat generated by its electrical flow based on the electrical characteristics (such as resistance, conductivity, etc.) of each semiconductor component. Electronic design automation (EDA) tools can be used in combination with thermal simulation software, such as co-simulation of Simulink and ANSYS, and obtain the electrical loss heat of each component through simulation, and input it as a heat source into the heat conduction model to further perform dynamic simulation analysis on the overall temperature field. Through numerical simulation (such as thermal analysis based on the finite element method), accurately simulate the thermal loss to obtain the thermal loss accumulation distribution of each semiconductor component. This process not only helps to understand how heat is transferred in the system but also can discover existing hot spot areas, and finally obtain the corresponding thermal loss accumulation distribution of each semiconductor power component under different operating conditions.

[0157] Step S45: Based on the heat transfer conduction optimization paths and heat loss accumulation distributions corresponding to each semiconductor power component under different working conditions, perform thermal simulation iterative optimization on the heat transfer conduction temperature distribution field among each semiconductor power component to generate the simulation optimization result of the heat flow temperature distribution among each semiconductor power component.

[0158] In the embodiment of the present invention, the data obtained through the previous steps is used to optimize the overall heat conduction process to obtain the final heat flow temperature distribution. First, the heat transfer conduction optimization path and heat loss accumulation distribution obtained from the previous analysis are used as inputs for a comprehensive thermal simulation. By using thermal simulation software such as ANSYS Icepak or COMSOL, thermal iterative optimization simulation is carried out. The specific process is to input the heat flow optimization path and heat loss distribution into the simulation tool for step-by-step iterative optimization, thereby forming a stable temperature distribution field. During the iterative process, by comparing the simulation results of each round, the optimization effect of the heat flow path is evaluated, and the heat flow path is further adjusted according to the heat loss distribution to reduce hot spots and optimize the heat dissipation efficiency. The obtained simulation optimization result of the heat flow temperature distribution will provide a theoretical basis for the actual heat dissipation design of semiconductor power components, and finally, the simulation optimization result of the heat flow temperature distribution among each semiconductor power component is obtained.

[0159] Furthermore, the present invention also provides a thermal simulation system for semiconductor power components, which is used to execute the thermal simulation method for semiconductor power components as described above. The thermal simulation system for semiconductor power components includes:

[0160] A semiconductor power component simulation module, which is used to obtain the geometric structure, material properties, and working characteristics corresponding to each semiconductor power component, and perform finite element simulation modeling based on the geometric structure corresponding to each semiconductor power component to generate a finite element model for each semiconductor power component;

[0161] A semiconductor component model heat conduction simulation module, which is used to perform a heat source distribution response analysis on the finite element models of each semiconductor power component based on the working characteristics corresponding to each semiconductor power component to generate a heat source distribution field corresponding to each semiconductor power component under different working conditions; perform a heat conduction simulation analysis on the heat source distribution field corresponding to each semiconductor power component under different working conditions based on the material properties corresponding to each semiconductor power component, so as to obtain the heat transfer conduction temperature distribution field among each semiconductor power component under different working conditions;

[0162] A semiconductor electro-thermal coupling impact assessment module, which is used to construct a corresponding electrical model of semiconductor components under different working conditions according to the working characteristics of each semiconductor power component, and based on the electrical model of semiconductor components, conduct an electro-thermal distribution impact assessment calculation on the heat conduction temperature distribution field among each semiconductor power component under different working conditions, so as to obtain the impact loss of the heat generated by the electrical flow on the heat flow distribution under different working conditions;

[0163] A semiconductor component thermal simulation iterative optimization module, which is used to obtain the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions, and based on the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions and the impact loss of the heat generated by the electrical flow on the heat flow distribution, conduct thermal simulation iterative optimization on the heat conduction temperature distribution field among each semiconductor power component, so as to generate a heat flow temperature distribution simulation optimization result among each semiconductor power component.

[0164] Therefore, from any perspective, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, it is intended to encompass all changes that fall within the meaning and scope of the equivalent elements of the application documents within the present invention.

[0165] The above are only specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be obvious to those skilled in the art. The general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but rather will conform to the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thermal simulation method for a semiconductor power component, characterized in that: The following steps are involved: Step S1: obtaining the geometric structure, material properties and working characteristics corresponding to each semiconductor power component, and performing finite element simulation modeling according to the geometric structure corresponding to each semiconductor power component to generate a finite element model of each semiconductor power component; Step S2: performing heat source distribution response analysis on the finite element model of each semiconductor power component based on the corresponding working characteristics of each semiconductor power component to generate a heat source distribution field corresponding to each semiconductor power component under different working conditions; Based on the material properties of each semiconductor power component, a heat conduction simulation analysis is performed on the heat source distribution field of each semiconductor power component under different working conditions to obtain the heat flow conduction temperature distribution field between each semiconductor power component under different working conditions; Step S3: constructing corresponding semiconductor component electrical models under different working conditions according to the corresponding working characteristics of each semiconductor power component, and performing an electric heat distribution impact evaluation calculation on the heat flow conduction temperature distribution field between each semiconductor power component under different working conditions based on the semiconductor component electrical model, so as to obtain the impact loss of heat generated by electrical flow on heat flow distribution under different working conditions; Step S4: Obtain the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions, and perform thermal simulation iterative optimization on the heat flow conduction temperature distribution field between each semiconductor power component based on the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions and the influence of heat generated by electrical flow on heat flow distribution, so as to generate a simulation optimization result of the heat flow temperature distribution between each semiconductor power component.

2. The thermal simulation method of a semiconductor power component according to claim 1, characterized in that: Step S1 includes the following steps: Step S11: obtaining the geometric structure corresponding to each semiconductor power component, including the refined size and appearance shape corresponding to each semiconductor power component; Step S12: extracting material properties of materials corresponding to each semiconductor power component according to a preset material database and the latest material performance literature to obtain material properties corresponding to each semiconductor power component, including thermal conductivity, specific heat capacity and thermal expansion coefficient of each material corresponding to each semiconductor power component; Step S13: obtaining the operating characteristics corresponding to each semiconductor power component, including the operating characteristic parameters corresponding to each semiconductor power component under different actual working conditions; Step S14: performing finite element simulation modeling according to the geometric structures corresponding to the various semiconductor power components to generate finite element models of the various semiconductor power components.

3. The thermal simulation method of a semiconductor power component according to claim 1, characterized in that: Step S2 includes the following steps: Step S21: Determine the working load conditions corresponding to each semiconductor power component by simulating the working characteristics corresponding to each semiconductor power component, including power loss, switching loss, heat convection and heat radiation working load conditions; Step S22: performing thermal response simulation modeling on the finite element model of each semiconductor power component based on the working load conditions corresponding to each semiconductor power component, so as to generate a thermal response simulation model corresponding to each semiconductor power component under different working conditions; Step S23: performing heat source distribution response analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions, so as to generate heat source distribution fields corresponding to each semiconductor power component under different working conditions; Step S24: Based on the material properties corresponding to each semiconductor power component, a heat conduction simulation analysis is performed on the heat source distribution field corresponding to each semiconductor power component under different working conditions to obtain the heat flow conduction temperature distribution field between each semiconductor power component under different working conditions.

4. The thermal simulation method of a semiconductor power component according to claim 3, characterized in that: Step S23 includes the following steps: Step S231: performing thermal performance change evaluation and analysis on the thermal response simulation models corresponding to each semiconductor power component under different working conditions, and obtaining the thermal performance changes corresponding to each semiconductor power component under different working conditions, including the heat dissipation capacity and thermal stability capacity of the component; Step S232: Based on the thermal performance changes of each semiconductor power component under different working conditions, a corresponding thermal response simulation model is subjected to a thermal time-domain transient numerical simulation to obtain the instantaneous thermal response changes of each semiconductor power component under different working conditions; Step S233: performing local heat accumulation analysis on the instantaneous heat response variation corresponding to each semiconductor power component under different working conditions, and obtaining the local heat response accumulation distribution corresponding to each semiconductor power component under different working conditions; Step S234: using fluid dynamics technology to perform heat flow simulation analysis on the thermal response simulation model corresponding to each semiconductor power component under different working conditions, so as to generate a heat flow simulation field corresponding to each semiconductor power component under different working conditions; performing heat flux density distribution statistical analysis on the heat flow simulation field corresponding to each semiconductor power component under different working conditions, so as to obtain the heat flux density distribution corresponding to each semiconductor power component under different working conditions; Step S235: Based on the local thermal response accumulation distribution and heat flux density distribution corresponding to each semiconductor power component under different working conditions, a heat source distribution response analysis is performed on the corresponding thermal response simulation model to generate a heat source distribution field corresponding to each semiconductor power component under different working conditions.

5. The thermal simulation method of a semiconductor power component according to claim 3, characterized in that: Step S24 includes the following steps: Step S241: performing heat source distribution characteristic analysis on the heat source distribution field corresponding to each semiconductor power component under different working conditions, and obtaining the heat source distribution characteristics corresponding to each semiconductor power component under different working conditions, including heat source distribution intensity, heat source distribution direction and heat source distribution frequency; Step S242: obtaining the material electrical and thermal properties corresponding to each semiconductor power component, and performing heat source power dispersion simulation on the heat source distribution characteristics corresponding to each semiconductor power component under different working conditions in combination with external environmental conditions, so as to generate the heat source power dispersion distribution corresponding to each semiconductor power component under different working conditions; Step S243: performing heat flow conduction simulation analysis on the heat source power divergence distribution corresponding to each semiconductor power component under different working conditions based on the thermal conductivity corresponding to each semiconductor power component, and obtaining a heat flow conduction simulation field between each semiconductor power component under different working conditions; Step S244: Based on the material properties corresponding to each semiconductor power component, a heat conduction temperature distribution simulation is performed on the heat flow conduction simulation field between each semiconductor power component under different working conditions to obtain the heat flow conduction temperature distribution field between each semiconductor power component under different working conditions.

6. The thermal simulation method of a semiconductor power component according to claim 5, characterized in that: Step S244 includes the following steps: Obtaining the material thermal conductivity difference between each semiconductor power component through the thermal conductivity corresponding to each semiconductor power component; Based on the material thermal conductivity differences between various semiconductor power components, the heat conduction temperature gradient change of the heat flow conduction simulation field between various semiconductor power components under different working conditions is solved to obtain the distribution of heat conduction temperature gradient change between various semiconductor power components under different working conditions; According to the distribution of heat conduction temperature gradient changes between various semiconductor power components under different working conditions, the heat flow temperature change differences corresponding to different regions between various semiconductor power components are obtained, and based on the specific heat capacity and thermal expansion coefficient corresponding to each semiconductor power component, the heat flow temperature change differences corresponding to different regions between various semiconductor power components are analyzed for thermal stress distribution, and the thermal stress distribution between various semiconductor power components under different working conditions is obtained; Temperature distribution simulation is performed based on the heat conduction temperature gradient change distribution and thermal stress distribution between various semiconductor power components under different working conditions to obtain the heat flow conduction temperature distribution field between various semiconductor power components under different working conditions.

7. The thermal simulation method of a semiconductor power component according to claim 1, characterized in that: Step S3 includes the following steps: Step S31: constructing corresponding semiconductor component electrical models under different working conditions according to the corresponding working characteristics of each semiconductor power component; Step S32: obtaining electrical flow paths between semiconductor power components under different working conditions through corresponding semiconductor component electrical models under different working conditions; Step S33: performing statistical analysis of electrical load and current density on the electrical flow paths between the semiconductor power components under different working conditions, and obtaining electrical load and current density at the flow positions of the semiconductor power components under different working conditions; Step S34: Based on the electrical load and current density at the flow position of each semiconductor power component under different working conditions, an electro-thermal distribution impact evaluation calculation formula is used to perform an electro-thermal distribution impact evaluation calculation on the heat flow conduction temperature distribution field between each semiconductor power component under different working conditions, so as to obtain the impact loss of heat generated by electrical flow on heat flow distribution under different working conditions.

8. The thermal simulation method of a semiconductor power component according to claim 7, characterized in that: The calculation formula for evaluating the impact of electric and thermal distribution in step S34 is specifically: In the formula, Q loss (r, t) is the influence loss of heat generated by electrical flow on heat flux distribution at position r and time t, r is the heat flux distribution position parameter, t is the time variable parameter, ρ is the material density of semiconductor power components, C p is the specific heat capacity of the semiconductor power component material, T(r,t) is the heat generated by the electrical flow corresponding to the semiconductor power component at position r and time t, is the gradient operator, k(r) is the electrical load of the semiconductor power component at position r, is the electrical heat gradient of the semiconductor power component at position r and time t, ρ c is the resistivity of the semiconductor power component material, J(r,t) is the current density corresponding to the semiconductor power component at position r and time t, and η is the correction factor affecting the loss.

9. The thermal simulation method of a semiconductor power component according to claim 1, characterized in that: Step S4 includes the following steps: Step S41: Obtaining the corresponding environmental thermal boundary conditions of each semiconductor power component under different working conditions, including air flow, coolant flow and environmental temperature boundary conditions; Step S42: performing heat exchange numerical correction according to the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions, and obtaining the heat exchange correction coefficient between each semiconductor power component and the surface environment under different working conditions; Step S43: performing heat flow dynamic optimization on the heat flow conduction paths corresponding to the heat flow conduction temperature distribution field between the semiconductor power components based on the heat exchange correction coefficient between the semiconductor power components and the surface environment under different working conditions, so as to generate the heat flow conduction optimization paths corresponding to the semiconductor power components under different working conditions; Step S44: based on the influence of heat generated by electrical flow of each semiconductor power component on heat flow distribution under different working conditions, a dynamic simulation analysis of heat loss is performed on the heat flow conduction temperature distribution field between each semiconductor power component to obtain the corresponding heat loss accumulation distribution of each semiconductor power component under different working conditions; Step S45: Based on the corresponding heat flux conduction optimization paths and heat loss accumulation distribution of each semiconductor power component under different working conditions, thermal simulation iterative optimization is performed on the heat flux conduction temperature distribution field between each semiconductor power component to generate a heat flux temperature distribution simulation optimization result between each semiconductor power component.

10. A thermal simulation system for a semiconductor power component, characterized in that: For executing the thermal simulation method of the semiconductor power component according to claim 1, the thermal simulation system of the semiconductor power component comprises: A semiconductor power component simulation module is used to obtain the geometric structure, material properties and working characteristics corresponding to each semiconductor power component, and perform finite element simulation modeling according to the geometric structure corresponding to each semiconductor power component to generate a finite element model of each semiconductor power component; The semiconductor component model heat conduction simulation module is used to perform heat source distribution response analysis on the finite element model of each semiconductor power component based on the corresponding working characteristics of each semiconductor power component, so as to generate the heat source distribution field corresponding to each semiconductor power component under different working conditions; based on the corresponding material properties of each semiconductor power component, the heat source distribution field corresponding to each semiconductor power component under different working conditions is simulated and analyzed for heat conduction, so as to obtain the heat flow conduction temperature distribution field between each semiconductor power component under different working conditions; The semiconductor electrothermal coupling impact assessment module is used to construct the corresponding semiconductor component electrical model under different working conditions according to the corresponding working characteristics of each semiconductor power component, and to perform electrothermal distribution impact assessment calculation on the heat flow conduction temperature distribution field between each semiconductor power component under different working conditions based on the semiconductor component electrical model, so as to obtain the impact loss of heat generated by electrical flow on heat flow distribution under different working conditions; The semiconductor component thermal simulation iterative optimization module is used to obtain the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions, and based on the environmental thermal boundary conditions corresponding to each semiconductor power component under different working conditions and the influence of heat generated by electrical flow on heat flux distribution, iteratively optimizes the heat flow conduction temperature distribution field between each semiconductor power component to generate a simulation optimization result of the heat flow temperature distribution between each semiconductor power component.

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