A gas supply device and a manufacturing method thereof

Abstract

The present invention relates to the field of semiconductor manufacturing, and in particular to a gas supply device and a manufacturing method thereof. The gas supply device includes a first sealing plate, a second sealing plate, a flow channel panel and a diversion channel. The first sealing plate is provided with an air inlet hole, the second sealing plate is provided with a plurality of air outlet holes, the flow channel panel is arranged between the first sealing plate and the second sealing plate, the diversion channel is arranged on the flow channel panel, the diversion channel includes multiple levels of sub-channels, each sub-channel is provided with a channel inlet and four channel outlets, the channel outlet of the upper-level sub-channel is connected to the channel inlet of the lower-level sub-channel, the channel inlet of the first-level sub-channel is connected to the air inlet hole, and the channel outlet of the last-level sub-channel is connected to the air outlet hole. After four levels of steps, the gas supply device is connected to the gas supply hole, and the gas supply hole is connected to the gas supply hole. <supgt;n< / supgt;分流,形成多层级均匀气路,形成一个均匀的排气面,均匀分布到基板表面,提高气体的均匀性,确保每个出气孔输出的气体浓度相近。

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and particularly to a gas supply device and a manufacturing method thereof. Background Art

[0002] In the fields of precision manufacturing such as semiconductors and display panels, the uniform supply of process gases plays a crucial role, which directly determines the quality of the thin film deposition or etching process. When the area of the substrate increases, the number of devices that can be carried also increases, which significantly reduces the production cost of each individual device.

[0003] However, in the process of gas transmission from a point source to a large-area substrate by traditional gas equalizing devices, there is a lack of an efficient gas shunting mechanism, resulting in uneven concentration distribution of gas at the gas outlet. This non-uniformity will directly affect the uniformity of thin film deposition or etching, and thus affect the quality of the device. Summary of the Invention

[0004] The technical problem to be solved by the present invention is: to solve one or more technical problems existing in the prior art, and at least provide a beneficial alternative or create conditions.

[0005] The solution of the present invention to solve its technical problem is: a gas supply device, which includes a first sealing plate, a second sealing plate, a flow channel panel and a shunt channel. An air inlet hole is provided on the first sealing plate, a plurality of air outlet holes are provided on the second sealing plate, the flow channel panel is arranged between the first sealing plate and the second sealing plate, the shunt channel is arranged on the flow channel panel, the shunt channel includes multiple levels of sub-channels, each sub-channel is provided with a channel inlet and four channel outlets, the channel outlets of the upper-level sub-channel are communicated with the channel inlets of the lower-level sub-channel, the channel inlet of the first-level sub-channel is communicated with the air inlet hole, and the channel outlets of the last-level sub-channel are communicated with the air outlet holes.

[0006] The beneficial effects of the present invention are: an air inlet hole is provided on the first sealing plate for introducing process gas; a plurality of air outlet holes are provided on the second sealing plate for uniformly distributing the gas to the surface of the substrate; the shunt channel forms a multi-level structure, each level of sub-channel has a central inlet and four corner outlets, and the outlets of the upper-level channel are communicated with the inlets of the lower-level channel to form a step-by-step shunt; after the gas enters the device, it will undergo step-by-step 4 n shunting to form a multi-level uniform gas path; it can significantly improve the uniformity of the gas, ensure that the gas concentrations output from each air outlet hole are similar, form a uniform exhaust surface, and be uniformly distributed to the surface of the substrate.

[0007] As a further improvement of the above technical solution, the sub-channels include a transverse channel and a longitudinal channel, and the transverse channel and the longitudinal channel are combined to form a cross-shaped channel. The channel inlet is arranged at the center of the cross-shaped channel, and the channel outlet is arranged at the four corners of the cross-shaped channel.

[0008] As a further improvement of the above technical solution, the sub-channels are provided with n levels, where n is a natural number and n≥2. The nth-level sub-channel is arranged on one side of the flow channel panel, and the (n - 1)th-level sub-channel is arranged on the other side of the flow channel panel. The nth-level sub-channel and the (n - 1)th-level sub-channel are connected through a perforation.

[0009] As a further improvement of the above technical solution, when n = 4, the sub-channels are respectively the first-level sub-channel, the second-level sub-channel, the third-level sub-channel, and the fourth-level sub-channel. The channel inlet of the first-level sub-channel is connected to the air inlet hole, the channel outlet of the first-level sub-channel is connected to the channel inlet of the second-level sub-channel, the channel outlet of the second-level sub-channel is connected to the channel inlet of the third-level sub-channel, the channel outlet of the third-level sub-channel is connected to the channel inlet of the fourth-level sub-channel, and the channel outlet of the fourth-level sub-channel is connected to the air outlet hole.

[0010] As a further improvement of the above technical solution, the top surface of the flow channel panel is provided with a cross-shaped first diversion groove and sixteen cross-shaped third diversion grooves, and the bottom surface of the flow channel panel is provided with four cross-shaped second diversion grooves and sixty-four cross-shaped fourth diversion grooves. The second diversion groove, the third diversion groove, and the fourth diversion groove are all arranged in a matrix with the first diversion groove as the center. The first diversion groove and the bottom surface of the first sealing plate cooperate to form the first-level sub-channel, the second diversion groove and the top surface of the second sealing plate cooperate to form the second-level sub-channel, the third diversion groove and the bottom surface of the first sealing plate cooperate to form the third-level sub-channel, and the fourth diversion groove and the top surface of the second sealing plate cooperate to form the fourth-level sub-channel.

[0011] As a further improvement of the above technical solution, a plurality of air inlet holes are provided on the first sealing plate, and a plurality of parallel diversion channels are provided on the flow channel panel. The air inlet holes are arranged in one-to-one correspondence with the channel inlets of the first-level sub-channels.

[0012] As a further improvement of the above technical solution, all the air outlet holes are arranged in a matrix on the second sealing plate to form a uniform surface-type air source.

[0013] As a further improvement of the above technical solution, the flow channel panel is arranged in an arc-shaped plate shape, the first sealing plate is attached to the top surface of the flow channel panel, and the second sealing plate is attached to the bottom surface of the flow channel panel.

[0014] As a further improvement of the above technical solution, the flow channel panel encloses an annular structure, the first sealing plate is attached to the outer side surface of the flow channel panel, and the second sealing plate is attached to the inner side surface of the flow channel panel.

[0015] A manufacturing method of the gas supply device according to the above, which includes opening a first flow dividing groove and a third flow dividing groove on the top surface of the flow channel panel, and opening a second flow dividing groove and a fourth flow dividing groove on the bottom surface of the flow channel panel; opening first through holes at the four corners of the first flow dividing groove, and the first flow dividing groove and the second flow dividing groove are communicated through the first through holes; opening second through holes at the four corners of the second flow dividing groove, and the second flow dividing groove and the third flow dividing groove are communicated through the second through holes; opening third through holes at the four corners of the third flow dividing groove, and the third flow dividing groove and the fourth flow dividing groove are communicated through the third through holes; fixedly attaching the bottom surface of the first sealing plate to the top surface of the flow channel panel, and fixedly attaching the top surface of the second sealing plate to the bottom surface of the flow channel panel to form the sub-channel; opening the air inlet hole on the first sealing plate; opening the air outlet hole on the second sealing plate to form a nozzle.

[0016] As the beneficial effect of the further improvement of the above technical solution, the method is simple to operate and suitable for large-scale production. Through standardized operation processes and quality control measures, the performance of each gas supply device can be ensured to be consistent; the process is simple and easy to realize automated production, which can reduce the manufacturing cost; the gas supply device prepared by this method has efficient gas distribution and supply capabilities. Through reasonable flow dividing groove design and air hole layout, it can ensure that the gas is evenly distributed in the reaction chamber, improving the process efficiency and consistency. Description of the Drawings

[0017] Figure 1 is a schematic structural diagram of an embodiment of the present invention;

[0018] Figure 2 is along Figure 1 the line A-A in

[0019] Figure 3 is along Figure 1 the line B-B in

[0020] Figure 4 is along Figure 1 the line C-C in

[0021] Figure 5 is along Figure 1 the line D-D in

[0022] Figure 6 is along Figure 1Cross-sectional view of line E-E therein;

[0023] Figure 7 It is one of the schematic structural diagrams of the flow channel panel according to an embodiment of the present invention;

[0024] Figure 8 It is the second of the schematic structural diagrams of the flow channel panel according to an embodiment of the present invention;

[0025] Figure 9 It is the flow channel schematic diagram of the first-stage sub-channel and the second-stage sub-channel according to an embodiment of the present invention;

[0026] Figure 10 It is the flow channel schematic diagram of the second-stage sub-channel and the third-stage sub-channel according to an embodiment of the present invention;

[0027] Figure 11 It is the flow channel schematic diagram of the third-stage sub-channel and the fourth-stage sub-channel according to an embodiment of the present invention;

[0028] Figure 12 It is the schematic structural diagram of the second embodiment of the present invention;

[0029] Figure 13 It is the schematic structural diagram of the third embodiment of the present invention;

[0030] Figure 14 It is the schematic structural diagram of the fourth embodiment of the present invention.

[0031] In the drawings: 100 - first sealing plate, 110 - air inlet hole, 200 - second sealing plate, 210 - air outlet hole, 310 - flow channel panel, 311 - first diversion groove, 312 - second diversion groove, 313 - third diversion groove, 314 - fourth diversion groove, 320 - diversion channel, 321 - first-stage sub-channel, 322 - second-stage sub-channel, 323 - third-stage sub-channel, 324 - fourth-stage sub-channel. Detailed implementation manners

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the above description of the embodiments are briefly described. Obviously, the described drawings are only a part of the embodiments of the present invention, rather than all embodiments. Those skilled in the art can also obtain other design solutions and drawings based on these drawings without creative efforts.

[0033] The concept, specific structure, and technical effects of the present invention will be clearly and completely described below in conjunction with embodiments and the accompanying drawings to fully understand the purpose, features, and effects of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative efforts all fall within the scope of protection of the present invention. In addition, all the connection / linkage relationships mentioned in the text do not simply refer to the direct connection of components, but refer to the formation of a more optimal connection structure by adding or reducing connection accessories according to specific implementation situations. Each technical feature in the present invention can be combined interactively without conflicting with each other.

[0034] In the field of precision manufacturing such as semiconductors and display panels, the uniform supply of process gases plays a crucial role, which directly determines the quality of the thin film deposition or etching process. When the area of the substrate increases, the number of devices that can be carried also increases, which significantly reduces the production cost of each individual device.

[0035] However, in the process of gas transmission from a point source to a large-area substrate, traditional gas distribution devices lack an efficient gas splitting mechanism, resulting in non-uniform concentration distribution of gas at the gas outlet. This non-uniformity will directly affect the uniformity of thin film deposition or etching, and thus affect the quality of the device.

[0036] For this reason, the present invention proposes a gas supply device, referring to Figures 1 to 11 , which includes a first sealing plate 100, a second sealing plate 200, a flow channel panel 310, and a splitting channel 320. An intake hole 110 is provided on the first sealing plate 100, a plurality of outlet holes 210 are provided on the second sealing plate 200, the flow channel panel 310 is arranged between the first sealing plate 100 and the second sealing plate 200, the splitting channel 320 is arranged on the flow channel panel 310, the splitting channel 320 includes multiple levels of sub-channels, each sub-channel is provided with a channel inlet and four channel outlets, the channel outlets of the upper-level sub-channel are connected to the channel inlets of the lower-level sub-channel, the channel inlet of the first-level sub-channel 321 is connected to the intake hole 110, and the channel outlets of the last-level sub-channel are connected to the outlet holes 210.

[0037] An intake hole 110 is provided on the first sealing plate 100 for introducing process gas; a plurality of outlet holes 210 are provided on the second sealing plate 200 for uniformly distributing the gas to the substrate surface; the splitting channel 320 forms a multi-level structure, each level of sub-channel has a central inlet and four corner outlets, and the outlets of the upper-level channel are connected to the inlets of the lower-level channel to form step-by-step splitting; after the gas enters the device, it will pass through step-by-step 4 nShunt to form a multi-level uniform gas path, which can significantly improve the uniformity of the gas, ensure that the gas concentrations output from each air outlet 210 are similar, form a uniform exhaust surface, and be evenly distributed on the substrate surface.

[0038] When it is necessary to evenly distribute the process gas, the process gas is introduced into the device and enters the first-stage sub-channel 321 through the air inlet 110. In the first-stage sub-channel 321, the gas is evenly shunted to the outlets at the four corners. These shunted gases then enter the second-stage sub-channel 322 and are evenly shunted again. This process is repeated until the gas passes through the last-stage sub-channel. Through step-by-step shunting, a multi-level uniform gas path is formed in the device, and each stage of the sub-channel further equalizes the gas concentration. Finally, the gas that has been shunted step by step is discharged from the air outlet 210 to form a uniform exhaust surface, which is evenly distributed on the substrate surface for processes such as thin film deposition or etching.

[0039] The channels may have inconsistent sizes due to process errors, resulting in inconsistent gas flow velocities. In one embodiment, the sub-channel includes a transverse channel and a longitudinal channel, and the transverse channel and the longitudinal channel are combined to form a cross-shaped channel. The channel inlet is provided at the center of the cross-shaped channel, and the channel outlet is provided at the four corners of the cross-shaped channel. Each channel outlet is supplied with gas by a transverse channel and a longitudinal channel, reducing the influence of size.

[0040] When multi-level channels are required, if stacked together in sequence, it will cause a significant increase in the thickness of the panel, thereby increasing the volume of the entire device. This not only occupies more space but may also increase the manufacturing cost and transportation difficulty. Thus, in one embodiment, the sub-channel is provided with n levels, where n is a natural number and n≥2. The nth-level sub-channel is provided on one side of the flow channel panel 310, and the (n - 1)th-level sub-channel is provided on the other side of the flow channel panel 310. The nth-level sub-channel and the (n - 1)th-level sub-channel are connected through perforations. By separately arranging sub-channels of different levels on both sides of the flow channel panel 310, the internal space of the panel is effectively utilized, thereby significantly reducing the volume of the entire device without sacrificing the gas shunting effect. The perforation connection realizes the efficient utilization of the internal space, ensures the smooth flow of gas between the nth-level and the (n - 1)th-level sub-channels, optimizes the gas flow path while improving the space utilization rate, and reduces unnecessary pressure loss.

[0041] If the gas cannot be effectively and evenly distributed throughout the entire panel area, the gas distribution may be uneven, which may affect subsequent gas treatment or reaction processes and reduce the overall efficiency. Thus, in one embodiment, n = 4, and the sub-channels are respectively the first-stage sub-channel 321, the second-stage sub-channel 322, the third-stage sub-channel 323, and the fourth-stage sub-channel 324. The channel inlet of the first-stage sub-channel 321 is in communication with the intake hole 110, the channel outlet of the first-stage sub-channel 321 is in communication with the channel inlet of the second-stage sub-channel 322, the channel outlet of the second-stage sub-channel 322 is in communication with the channel inlet of the third-stage sub-channel 323, the channel outlet of the third-stage sub-channel 323 is in communication with the channel inlet of the fourth-stage sub-channel 324, and the channel outlet of the fourth-stage sub-channel 324 is in communication with the outlet hole 210. Through the step-by-step diversion of the four-stage sub-channels, the gas can be quickly and evenly distributed throughout the entire panel area. Each stage of the sub-channels diverts the gas from the center to four directions, ensuring that the gas can be fully diffused and mixed at each stage, improving the gas distribution uniformity, and solving the problem of uneven gas distribution in the traditional diversion structure; by increasing the diversion levels and refining the diversion paths, the gas can reach the required uniform distribution state in a shorter time.

[0042] Using additional pipes or connectors to construct the diversion channel 320 may lead to layout difficulties and even require an increase in the size of the entire device, thereby increasing the manufacturing cost and transportation difficulty. Thus, in one embodiment, the top surface of the flow channel panel 310 is provided with a cross-shaped first diversion groove 311 and sixteen cross-shaped third diversion grooves 313, and the bottom surface of the flow channel panel 310 is provided with four cross-shaped second diversion grooves 312 and sixty-four cross-shaped fourth diversion grooves 314. The second diversion grooves 312, the third diversion grooves 313, and the fourth diversion grooves 314 are all arranged in a matrix with the first diversion groove 311 as the center. The first diversion groove 311 and the bottom surface of the first sealing plate 100 cooperate to form the first-stage sub-channel 321, the second diversion groove 312 and the top surface of the second sealing plate 200 cooperate to form the second-stage sub-channel 322, the third diversion groove 313 and the bottom surface of the first sealing plate 100 cooperate to form the third-stage sub-channel 323, and the fourth diversion groove 314 and the top surface of the second sealing plate 200 cooperate to form the fourth-stage sub-channel 324. By directly etching or processing the diversion grooves on the flow channel panel 310 and then cooperating with the sealing plate to form the gas path pipeline, the manufacturing process is greatly simplified; the design of the groove structure makes the gas diversion channel 320 more compact, effectively saving the space inside the device. Since the diversion grooves are directly provided on the flow channel panel 310, no additional pipes or connectors are required, further reducing the space occupation.

[0043] The shunting method for a single or a few channels may not ensure the uniform distribution of gas over the entire panel area. Thus, in one embodiment, referring to Figure 14 , a plurality of air inlets 110 are provided on the first sealing plate 100, and a plurality of shunting channels 320 arranged in parallel are provided on the flow channel panel 310. The air inlets 110 are arranged in one-to-one correspondence with the channel inlets of the first-stage sub-channels 321. The plurality of shunting channels 320 arranged in parallel on the flow channel panel 310 enable gas to enter multiple channels simultaneously for shunting, improving the shunting efficiency and ensuring the uniformity and stability of the gas during the shunting process. Each shunting channel 320 serves as an independent gas shunting unit and works together to achieve the efficient and uniform distribution of gas.

[0044] The flow rates of the gas flowing out from each outlet may be uneven, resulting in uneven distribution of the gas concentration over the target area and affecting the consistency and repeatability of the process. Thus, in one embodiment, all the air outlet holes 210 are arranged in a matrix on the second sealing plate 200 to form a uniform surface-type gas source. By arranging the air outlet holes 210 in a matrix on the second sealing plate 200, the uniformity of the gas flowing out from each outlet is ensured, avoiding the problem of uneven distribution of the process gas caused by excessive or insufficient gas flow rate at a single point or local outlet, and improving the uniformity and stability of the entire gas supply system. The uniform distribution of the air outlet holes 210 enables the process gas to cover the target area more evenly, thereby improving the consistency and repeatability of the process. The uniform distribution of the air outlet holes 210 helps to reduce the residence time and pressure loss of the gas in the system, thereby improving the overall efficiency of the system.

[0045] The gas edge effect refers to the phenomenon that during the gas flow or diffusion process, due to changes in boundary conditions or geometric shapes, significant changes occur in the gas behavior in the edge region. The edge effect may cause the processing effect in the edge region of the substrate to be different from that in the central region, affecting the product quality and consistency. Thus, in one embodiment, referring to Figure 12 , the flow channel panel 310 is arranged in an arc-shaped plate, the first sealing plate 100 is attached to the top surface of the flow channel panel 310, and the second sealing plate 200 is attached to the bottom surface of the flow channel panel 310. The design of the arc-shaped plate flow channel panel 310 enables the gas supply device to perfectly fit the curved substrate, realizing the uniform gas supply to the curved substrate. The arc-shaped plate flow channel panel 310 can avoid uneven gas distribution caused by different flow channel lengths and shapes in the edge region and the central region, reducing the influence of the edge effect.

[0046] In the reaction chamber, some regions may receive excessive gas while other regions may have insufficient gas, affecting the process efficiency and consistency and resulting in unstable product quality. Thus, in one embodiment, referring toFigure 13 The flow channel panel 310 encloses an annular structure. The first sealing plate 100 is arranged in contact with the outer side surface of the flow channel panel 310, and the second sealing plate 200 is arranged in contact with the inner side surface of the flow channel panel 310. By designing the flow channel panel 310 into an annular structure and making it in contact with the inner side surface of the second sealing plate 200, a closed reaction chamber is formed. Gas uniformly flows into the reaction chamber through the arc-shaped flow channel panel 310, ensuring that stable and uniform gas coverage can be obtained at each position in the chamber; the uniform gas distribution helps to improve the process efficiency and consistency. In the process of chemical reaction or material synthesis, the uniform gas coverage can ensure that the reactants react at the same rate at each position, thereby improving the quality and yield of the products.

[0047] A manufacturing method of the gas supply device according to any one of the above, which includes opening a first flow dividing groove 311 and a third flow dividing groove 313 on the top surface of the flow channel panel 310, and opening a second flow dividing groove 312 and a fourth flow dividing groove 314 on the bottom surface of the flow channel panel 310; opening first through holes at the four corners of the first flow dividing groove 311, and connecting the first flow dividing groove 311 and the second flow dividing groove 312 through the first through holes; opening second through holes at the four corners of the second flow dividing groove 312, and connecting the second flow dividing groove 312 and the third flow dividing groove 313 through the second through holes; opening third through holes at the four corners of the third flow dividing groove 313, and connecting the third flow dividing groove 313 and the fourth flow dividing groove 314 through the third through holes; fixing the bottom surface of the first sealing plate 100 in contact with the top surface of the flow channel panel 310, and fixing the top surface of the second sealing plate 200 in contact with the bottom surface of the flow channel panel 310 to form the sub-channels; opening the air inlet hole 110 on the first sealing plate 100; opening the air outlet hole 210 on the second sealing plate 200 to form a nozzle.

[0048] This method is easy to operate and suitable for large-scale production. Through standardized operation processes and quality control measures, the performance of each gas supply device can be ensured to be consistent; the process is simple and easy to realize automated production, which can reduce the manufacturing cost; the gas supply device prepared by this method has efficient gas distribution and supply capabilities. Through reasonable design of the flow dividing grooves and layout of the air holes, it can ensure uniform gas distribution in the reaction chamber, improving the process efficiency and consistency.

[0049] The above has specifically described the preferred embodiments of the present invention, but the present invention is not limited to the described embodiments. Those skilled in the art can also make various equivalent variations or substitutions without departing from the spirit of the present invention, and these equivalent variations or substitutions are all included within the scope defined by the claims of this application.

Claims

1. A gas supply device, characterized in that, Comprising: A first sealing plate (100) provided with an air inlet hole (110) thereon; A second sealing plate (200) provided with a plurality of air outlet holes (210) thereon; A flow channel panel (310) disposed between the first sealing plate (100) and the second sealing plate (200); A flow splitting channel (320) disposed on the flow channel panel (310), the flow splitting channel (320) comprising multiple levels of sub-channels, each sub-channel having a channel inlet and four channel outlets, the channel outlets of the upper-level sub-channel being connected to the channel inlets of the lower-level sub-channel, the channel inlet of the first-level sub-channel (321) being connected to the air inlet hole (110), and the channel outlets of the last-level sub-channel being connected to the air outlet holes (210); The sub-channel comprises a transverse channel and a longitudinal channel, the transverse channel and the longitudinal channel being combined to form a cross-shaped channel, the channel inlet being disposed at the center of the cross-shaped channel, and the channel outlets being disposed at the four corners of the cross-shaped channel; The sub-channel has n levels, where n is a natural number and n≥2, one side of the flow channel panel (310) is provided with the nth-level sub-channel, the other side of the flow channel panel (310) is provided with the (n - 1)th-level sub-channel, and the nth-level sub-channel and the (n - 1)th-level sub-channel are connected through a perforation.

2. The gas supply device according to claim 1, wherein, When n = 4, the sub-channels are respectively the first-level sub-channel (321), the second-level sub-channel (322), the third-level sub-channel (323), and the fourth-level sub-channel (324), the channel inlet of the first-level sub-channel (321) is connected to the air inlet hole (110), the channel outlet of the first-level sub-channel (321) is connected to the channel inlet of the second-level sub-channel (322), the channel outlet of the second-level sub-channel (322) is connected to the channel inlet of the third-level sub-channel (323), the channel outlet of the third-level sub-channel (323) is connected to the channel inlet of the fourth-level sub-channel (324), and the channel outlet of the fourth-level sub-channel (324) is connected to the air outlet hole (210).

3. The gas supply device according to claim 2, wherein, The top surface of the flow channel panel (310) is provided with a cross-shaped first flow dividing groove (311) and sixteen cross-shaped third flow dividing grooves (313), and the bottom surface of the flow channel panel (310) is provided with four cross-shaped second flow dividing grooves (312) and sixty-four cross-shaped fourth flow dividing grooves (314). The second flow dividing grooves (312), the third flow dividing grooves (313), and the fourth flow dividing grooves (314) are all arranged in a matrix centered on the first flow dividing groove (311). The first flow dividing groove (311) and the bottom surface of the first sealing plate (100) cooperate to form the first-stage sub-channel (321), the second flow dividing groove (312) and the top surface of the second sealing plate (200) cooperate to form the second-stage sub-channel (322), the third flow dividing groove (313) and the bottom surface of the first sealing plate (100) cooperate to form the third-stage sub-channel (323), and the fourth flow dividing groove (314) and the top surface of the second sealing plate (200) cooperate to form the fourth-stage sub-channel (324).

4. A gas supply device according to claim 1, characterized in that, A plurality of air inlet holes (110) are provided on the first sealing plate (100), and a plurality of parallel flow dividing channels (320) are provided on the flow channel panel (310). The air inlet holes (110) are arranged in one-to-one correspondence with the channel inlets of the first-stage sub-channel (321).

5. A gas supply device according to claim 1, characterized in that, All the air outlet holes (210) are arranged in a matrix on the second sealing plate (200) to form a uniform surface air source.

6. The gas supply device according to claim 1, characterized in that, The flow channel panel (310) is arranged in an arc-shaped plate shape. The first sealing plate (100) is attached to the top surface of the flow channel panel (310), and the second sealing plate (200) is attached to the bottom surface of the flow channel panel (310).

7. A gas supply device according to claim 1, characterized in that, The flow channel panel (310) encloses an annular structure. The first sealing plate (100) is attached to the outer side surface of the flow channel panel (310), and the second sealing plate (200) is attached to the inner side surface of the flow channel panel (310).

8. A manufacturing method of the gas supply device according to claim 3, characterized in that, Including: Opening the first flow dividing groove (311) and the third flow dividing groove (313) on the top surface of the flow channel panel (310), and opening the second flow dividing groove (312) and the fourth flow dividing groove (314) on the bottom surface of the flow channel panel (310); Opening first through holes at the four corners of the first flow dividing groove (311), and connecting the first flow dividing groove (311) and the second flow dividing groove (312) through the first through holes; Opening second through holes at the four corners of the second flow dividing groove (312), and connecting the second flow dividing groove (312) and the third flow dividing groove (313) through the second through holes; Opening third through holes at the four corners of the third flow dividing groove (313), and connecting the third flow dividing groove (313) and the fourth flow dividing groove (314) through the third through holes; Fixing the bottom surface of the first sealing plate (100) to be attached and fixed to the top surface of the flow channel panel (310), and fixing the top surface of the second sealing plate (200) to be attached and fixed to the bottom surface of the flow channel panel (310) to form the sub-channels; The intake hole (110) is formed on the first sealing plate (100); The outlet hole (210) is formed on the second sealing plate (200) to form a nozzle.

Images