Manufacturing method of semiconductor device

Abstract

The invention relates to a manufacturing method of a semiconductor device, and the method comprises the steps: providing a semiconductor structure which comprises a substrate structure and a top metal layer disposed at one side of the substrate structure; performing first heat treatment on the semiconductor structure; cleaning the top metal layer by using a cleaning solution so as to form a liquid protection film on the surface of the top metal layer; and forming a protection layer on one side, far away from the substrate structure, of the top metal layer. Therefore, the liquid protection film can prevent the material of the protection layer from corroding the top metal layer, thereby reducing the defect occurrence rate of the surface of the top metal layer and improving the yield of the device.

Description

Technical Field

[0001] This application relates to the field of semiconductor integrated circuit manufacturing technology, and particularly to a method for manufacturing a semiconductor device. Background Art

[0002] Generally, the top metal layer of a semiconductor device is formed in the back-end process of the semiconductor device, such as forming metal pads. Aluminum has long been widely used as an interconnect material in the back-end of integrated circuits due to its low cost, low resistivity, and high compatibility with silicon processes. Polyimide (PI) is a polymer material with characteristics such as high temperature resistance, radiation resistance, good insulation performance, corrosion resistance, and stable chemical properties, and is used in semiconductor integrated circuits as a device protection or barrier material. For example, when aluminum is used as the surface metal layer (Top Metal layer), a polyimide protective layer is formed above the surface metal layer. However, in practical applications, it is found that defects are easily formed on the surface of the surface metal layer, reducing the yield of the device. Summary of the Invention

[0003] Based on this, it is necessary to provide a method for manufacturing a semiconductor device to address the above problems.

[0004] A method for manufacturing a semiconductor device includes:

[0005] Providing a semiconductor structure, the semiconductor structure including a substrate structure and a top metal layer disposed on one side of the substrate structure;

[0006] Performing a first heat treatment on the semiconductor structure;

[0007] Cleaning the top metal layer with a cleaning solution to form a liquid protection film on the surface of the top metal layer;

[0008] Forming a protective layer on the side of the top metal layer away from the substrate structure.

[0009] In one embodiment, the semiconductor structure is rotated at different speeds and the top metal layer is cleaned.

[0010] In one embodiment, the step of cleaning the top metal layer to form a liquid protection film on the surface of the top metal layer includes:

[0011] Rotating the semiconductor structure at a first preset speed and cleaning the top metal layer for a first preset duration;

[0012] Rotating the semiconductor structure at a second preset speed and cleaning the top metal layer for a second preset duration.

[0013] In one embodiment, the first preset speed is less than the second preset speed.

[0014] In one embodiment, the first preset duration is greater than the second preset duration.

[0015] In one embodiment, the first preset speed ranges from 500 rpm to 1500 rpm;

[0016] and / or, the second preset speed ranges from 2000 rpm to 4000 rpm;

[0017] and / or, the first preset duration ranges from 10 s to 30 s;

[0018] and / or, the second preset duration ranges from 10 s to 30 s.

[0019] In one embodiment, the cleaning liquid is a neutral solution.

[0020] In one embodiment, the cleaning liquid is an insulating solution;

[0021] and / or, the cleaning liquid includes deionized water.

[0022] In one embodiment, the material of the top metal layer includes aluminum, and the material of the protective layer includes polyimide.

[0023] In one embodiment, after the step of forming the protective layer on a side of the top metal layer away from the substrate structure, the method further includes:

[0024] Performing a second heat treatment on the semiconductor structure.

[0025] The method for manufacturing a semiconductor device provided by the embodiments of the present application, by using a cleaning liquid to clean the top metal layer after the first heat treatment and before manufacturing the protective layer, forms a liquid protection film on the surface of the top metal layer. In this way, the liquid protection film can prevent the material of the protective layer from eroding the top metal layer, thereby reducing the defect incidence rate on the surface of the top metal layer and improving the yield of the device. Description of the Drawings

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application or exemplary embodiments, the following will briefly introduce the drawings required for the description of the embodiments or exemplary embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0027] Figure 1It is a schematic diagram of the local structure of a semiconductor device in the prior art.

[0028] Figure 2 It is a flowchart of a manufacturing method of a semiconductor device provided by an embodiment of the present application.

[0029] Figures 3 - 6 It is Figure 2 a schematic diagram of the device structure during the process of the manufacturing method shown.

[0030] Figure 7 It is Figure 2 a schematic flowchart of S300 in the manufacturing method shown.

[0031] Figure 8 It is a schematic diagram of defect comparison provided by an embodiment of the present application.

[0032] Figure 9 It is another flowchart of a manufacturing method of a semiconductor device provided by an embodiment of the present application.

[0033] Reference numerals:

[0034] 11. Surface metal layer; 12. Passivation film layer; 13. Polyimide protective layer; 14. Pit defect; 21. Substrate structure; 22. Top metal layer; 23. Passivation layer; 24. Liquid protection film; 25. Protective layer; 31. Passivation material layer; 32. Protection material layer. Detailed implementation manners

[0035] To make the above objects, features, and advantages of the present application more obvious and understandable, the following will describe the detailed implementation manners of the present application with reference to the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used in the specification of this application herein are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0037] It should be understood that when an element or layer is referred to as "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as "directly on", "directly adjacent to", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or portions, these elements, components, regions, layers, doping types and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or portion from another element, component, region, layer, doping type or portion. Thus, without departing from the teachings of the present application, the first element, component, region, layer, doping type or portion discussed below may be denoted as the second element, component, region, layer or portion.

[0038] Spatial relationship terms such as "under", "below", "beneath", "underneath", "above", "over", etc. may be used herein to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientation shown in the figures, spatial relationship terms also encompass different orientations of the device in use and operation. For example, if the device in the figures is flipped, an element or feature described as "under" or "beneath" or "underneath" another element or feature will be oriented "over" the other element or feature. Thus, the exemplary terms "under" and "beneath" can include both an upper and a lower orientation. Additionally, the device may also have other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are to be interpreted accordingly.

[0039] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprises / comprising" or "has / have" etc. specify the presence of the stated features, wholes, steps, operations, components, parts or combinations thereof, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, in this specification, the term "and / or" includes any and all combinations of the related listed items.

[0040] Embodiments of the application are described herein with reference to cross-sectional views that are schematic illustrations of ideal embodiments (and intermediate structures) of the present application, such that variations in the shapes shown are to be expected due to, for example, manufacturing techniques and / or tolerances. Accordingly, embodiments of the present application should not be limited to the specific shapes of regions shown herein, but include shape deviations due to, for example, manufacturing techniques. For example, an implantation region shown as rectangular typically has rounded or curved features and / or an implantation concentration gradient at its edges, rather than a binary change from the implantation region to the non-implantation region. Similarly, a buried region formed by implantation can result in some implantation in the region between the buried region and the surface through which the implantation occurs. Thus, the regions shown in the figures are substantially schematic, their shapes do not represent the actual shapes of the regions of the device, and do not limit the scope of the present application.

[0041] As described in the background art, with reference to Figure 1 As shown, a passivation film layer 12 and a polyimide protection layer 13 are sequentially formed above the surface metal layer 11. Among them, an opening is provided on the passivation film layer 12 to expose a part of the surface of the surface metal layer 11, and the polyimide protection layer 13 also covers the exposed surface of the surface metal layer 11. However, since the polyimide material is an alkaline solution, the surface of the surface metal layer 11 is eroded to form a pit defect 14, and this pit defect 14 reduces the yield of the device.

[0042] In view of the above problems, an embodiment of the present application provides a method for manufacturing a semiconductor device. After the first heat treatment and before manufacturing the protection layer, a cleaning solution is used to clean the top metal layer, so that a liquid protection film is formed on the surface of the top metal layer. In this way, the liquid protection film can prevent the material of the protection layer from eroding the top metal layer, thereby reducing the defect incidence rate on the surface of the top metal layer and improving the yield of the device.

[0043] Specifically, an embodiment of the present application provides a method for manufacturing a semiconductor device, and the semiconductor device can be a power discrete device or a power IC. Among them, the power discrete device at least includes a bipolar power transistor (Bipolar Power Transistor, GTR), a gate turn-off thyristor (Gate Turn-off Thyristor, GTO), a MOS controlled thyristor (MOS Controlled Thyristor, MCT), a power field effect transistor (Power MOSFET), an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), a static induction transistor (Static Induction Transistor, SIT), and a static induction thyristor (Static Induction Thyristor, SITH), etc.

[0044] Further, the semiconductor device can be an LDMOS (Laterally-diffused Metal-Oxide Semiconductor) device, a VDMOS (Vertical Double-diffused Metal Oxide Semiconductor Field Effect Transistor) device, an LIGBT (Lateral Insulated Gate Bipolar Transistor) device, an LMCT (Lateral MOS Controlled Thyristor) device, or an EDMOS (Extended Drain Metal Oxide Semiconductor) device.

[0045] Referring to Figure 2 and in combination with Figure 3 、 Figure 4 、 Figure 5 and Figure 6 as shown, the manufacturing method specifically includes the following steps:

[0046] S100: Provide a semiconductor structure, which includes a substrate structure 21 and a top metal layer 22 provided on one side of the substrate structure 21. In the embodiment of the present application, the difference between the semiconductor structure and the semiconductor device is that: the semiconductor device is a finished product, and the semiconductor structure is a semi-finished product, that is, the semiconductor device can be formed by further processing the semiconductor structure. The substrate structure 21 may include a substrate and structures such as a source region, a drain region, and a gate provided on the substrate. Further, the top metal layer 22 is used for wiring, and the top metal layer 22 can be electrically connected to the source region, the drain region, or the gate. In one example, the material of the top metal layer 22 includes aluminum.

[0047] In one embodiment, the semiconductor structure further includes a passivation layer 23, the passivation layer 23 is provided on the top metal layer 22, and an opening is provided on the passivation layer 23 to expose a part of the surface of the passivation layer 23, and the top metal layer 22 is electrically connected to the external circuit through the exposed surface.

[0048] S200: Perform a first heat treatment on the semiconductor structure. Exemplarily, the first heat treatment process can be an alloy process. It can be understood that the alloy process is to place the semiconductor structure in a high-temperature reaction chamber and introduce a process gas into the interior of the reaction chamber to combine with the free dangling bonds in the semiconductor structure to form a stable form, and at the same time release the internal stress of the metal film layer and the stress between the metal film layer and other film layers.

[0049] S300: Clean the top metal layer 22 with a cleaning solution to form a liquid protection film 24 on the surface of the top metal layer 22. Here, the liquid protection film 24 refers to a microscopic liquid film layer formed on the exposed surface of the top metal layer 22.

[0050] It should be noted that the cleaning solution refers to a liquid that has a protective function for the top metal layer 22 and can reduce the damage of the material solution of the protective layer 25 to the top metal layer 22.

[0051] S400: Form a protective layer 25 on the side of the top metal layer 22 away from the substrate structure 21. Exemplarily, the protective layer 25 covers the exposed surface of the top metal layer 22 and at least a part of the passivation layer 23. In one example, the material of the protective layer 25 includes polyimide (PI).

[0052] In the manufacturing method of the semiconductor device provided by the embodiment of the present application, after the first heat treatment and before manufacturing the protective layer 25, the top metal layer 22 is cleaned with a cleaning solution, so that a liquid protection film 24 is formed on the surface of the top metal layer 22. Thus, the liquid protection film 24 can prevent the material of the protective layer 25 from eroding the top metal layer 22, thereby reducing the defect incidence rate on the surface of the top metal layer 22 and improving the yield of the device.

[0053] It should be noted that generally, since metals are prone to corrosion - type defects in a humid environment, after metal etching, it is usually necessary to avoid moisture on the metal surface. In the embodiment of the present application, cleaning after the first heat treatment has at least the following beneficial effects: on the one hand, if cleaning is carried out before the first heat treatment, after the heat treatment process, the liquid protection film 24 is likely to evaporate and disappear; on the other hand, after the first heat treatment, a thin oxide protective layer 25, such as aluminum oxide, is formed on the metal surface. The oxide protective layer 25 can protect the top metal layer 22 and prevent the top metal layer 22 from having corrosion - type defects in a humid environment.

[0054] It should also be noted that in the embodiment of the present application, only the top metal layer 22 is protected, not the intermediate metal layer in the semiconductor device. Because after the top metal layer 22 is manufactured, a heat treatment process and a protective layer 25 deposition process will be carried out subsequently. After these processes, the surface state of the top metal layer 22 will change, and the surface charge will be redistributed, which is likely to cause potential erosion. The embodiment of the present application adds a cleaning process between the heat treatment process and the protective layer 25 deposition process to prevent the metal from being eroded in an alkaline environment. However, after the intermediate metal layer is manufactured, an oxide film layer deposition process will be carried out subsequently, and there is no protective layer 25 deposition process, so there will be no phenomenon that the alkaline protective layer material causes erosion of the top metal layer 22.

[0055] In one embodiment, the cleaning liquid is a neutral solution. It can be understood that when manufacturing the protective layer 25, a polyimide solution needs to be coated. Since the polyimide solution is an alkaline solution, the alkaline solution is likely to erode the surface of the top metal layer 22, forming pit defects. By setting the cleaning liquid as a neutral solution, the liquid protection film 24 can protect the top metal layer 22 and reduce the erosion of the alkaline solution on the top metal layer 22.

[0056] In one embodiment, the pH value of the cleaning liquid ranges from 6 to 8. Exemplarily, the pH value of the cleaning liquid can be 6, 6.5, 7, 7.5 or 8. By making the pH value of the cleaning liquid within the above range, it can ensure that while the cleaning liquid has a protective effect, the pH range of the cleaning liquid is relatively wide, reducing the preparation difficulty of the cleaning liquid.

[0057] In one embodiment, the cleaning liquid is an insulating solution. Exemplarily, the insulating solution is a solution without conductive ions. In one example, the liquid protection film 24 is a grain boundary potential protection layer 25.

[0058] It can be understood that when manufacturing the protective layer 25, a polyimide solution needs to be coated. Since the polyimide solution is an alkaline solution, the erosion of metal in different pH solutions is affected by the grain boundary potential. Specifically, the surface state of the top metal layer 22 will change, and the surface charge will be redistributed, easily leading to potential erosion. By setting the cleaning liquid as an insulating solution, not only a new charge distribution is formed on the surface of the top metal layer 22, but also an insulating protective film layer is formed on the surface of the top metal layer 22, thereby preventing the potential erosion of the alkaline solution on the top metal layer 22.

[0059] In one embodiment, the cleaning liquid includes deionized water. In one example, the cleaning liquid is deionized water. Thus, the cleaning liquid is both a neutral solution and an insulating solution. On the one hand, it can reduce the direct erosion of the alkaline solution on the top metal layer 22, and on the other hand, it can prevent the potential erosion of the alkaline solution on the top metal layer 22.

[0060] In one embodiment, in S300, the semiconductor structure is rotated at different speeds and the top metal layer 22 is cleaned. It can be understood that the semiconductor structure can be placed on a rotating machine table, and the rotating machine table drives the semiconductor structure to rotate.

[0061] It should be noted that when the rotation speed of the semiconductor structure is different, the surface tension of the cleaning liquid on the top metal layer 22 is different, and thus the film thickness of the formed liquid protection film 24 is different. By cleaning the top metal layer 22 at different rotation speeds, it is beneficial to form a liquid protection film 24 with a relatively uniform film thickness, thereby ensuring that the liquid protection film 24 has a uniform protection performance on the surface of the top metal layer 22.

[0062] In one embodiment, with reference to Figure 7 as shown, S300: Clean the top metal layer 22 to form a liquid protection film 24 on the surface of the top metal layer 22. The specific steps are as follows:

[0063] S310: Rotate the semiconductor structure at a first preset speed and clean the top metal layer 22 for a first preset duration.

[0064] S320: Rotate the semiconductor structure at a second preset speed and clean the top metal layer 22 for a second preset duration.

[0065] In the embodiment of the present application, S310 is equivalent to the first cleaning stage, and S320 is equivalent to the second cleaning stage. By cleaning the top metal layer 22 at the first preset speed for the first preset duration and cleaning the top metal layer 22 at the second preset speed for the second preset duration, it is beneficial to form a liquid protection film 24 with a relatively uniform film thickness, thereby ensuring that the liquid protection film 24 has a uniform protection performance on the surface of the top metal layer 22.

[0066] In one embodiment, the first preset speed is less than the second preset speed. It can be understood that the smaller the rotation speed, the thicker the film thickness of the liquid protection film 24. By making the first preset speed less than the second preset speed, it is equivalent to first forming a liquid protection film 24 with a relatively thick film thickness in the first cleaning stage, and then thinning the thickness of the liquid protection film 24 in the second cleaning stage, thereby being beneficial to forming a liquid protection film 24 with a relatively uniform film thickness, and further ensuring that the liquid protection film 24 has a uniform protection performance on the surface of the top metal layer 22.

[0067] In one embodiment, the first preset duration is greater than the second preset duration. In this way, it is ensured that a liquid protection film 24 with a relatively thick and uniform film thickness can be formed in the first cleaning stage, so that the finally formed liquid protection film 24 has a uniform protection performance on the surface of the top metal layer 22.

[0068] In one embodiment, the first preset speed is between 500 rpm - 1500 rpm. Exemplarily, the first preset speed can be 500 rpm, 600 rpm, 800 rpm, 1000 rpm, 1200 rpm, 1350 rpm, 1450 rpm or 1500 rpm. By making the first preset speed within the above range, it is beneficial to form a liquid protection film 24 with a relatively thick film thickness in the first cleaning stage.

[0069] In one embodiment, the second preset speed is between 2000 rpm and 4000 rpm. Exemplarily, the second preset speed can be 2000 rpm, 2300 rpm, 2500 rpm, 2700 rpm, 3000 rpm, 3300 rpm, 3500 rpm, 3800 rpm, or 4000 rpm. By making the second preset speed within the above range, it is beneficial to make the uniformity of the finally formed liquid protection film 24 better, so that the liquid protection film 24 has uniform protection performance on the surface of the top metal layer 22.

[0070] In one embodiment, the first preset duration is between 10 s and 30 s. Exemplarily, the first preset duration can be 10 s, 13 s, 16 s, 18 s, 22 s, 25 s, 28 s, or 30 s. By making the first preset duration within the above range, it is beneficial to form a liquid protection film 24 with a relatively thick and uniform film thickness in the first cleaning stage.

[0071] In one embodiment, the second preset duration is between 10 s and 30 s. Exemplarily, the second preset duration can be 10 s, 14 s, 17 s, 20 s, 23 s, 26 s, 28 s, or 30 s. By making the second preset duration within the above range, the time for thinning the liquid protection film 24 is relatively sufficient, which is beneficial to making the uniformity of the finally formed liquid protection film 24 better, so that the liquid protection film 24 has uniform protection performance on the surface of the top metal layer 22.

[0072] It should be noted that by making the values of the first preset speed, the second preset speed, the first preset duration, and the second preset duration within the above ranges, it can ensure that the film thickness of the liquid protection film 24 is within a reasonable range, and avoid the film thickness of the liquid protection film 24 being too thick, which may cause poor contact between the protection layer 25 and the passivation layer 23 and the top metal layer 22, resulting in easy detachment of the protection layer 25.

[0073] In one embodiment, S100: Provide a semiconductor structure, and the semiconductor structure includes a substrate structure 21 and a top metal layer 22 disposed on one side of the substrate structure 21. Specifically, it includes the following steps:

[0074] S110: Provide the substrate structure 21.

[0075] S120: Form a metal material layer on the substrate structure 21. Exemplarily, the material of the metal material layer is aluminum.

[0076] S130: Form a patterned mask layer on the metal material layer.

[0077] S140: Etch the metal material layer to form the top metal layer 22.

[0078] S150: Remove the patterned mask layer. Exemplarily, a dry process can be first used to perform a first removal of the patterned mask layer, and then a wet process can be used to perform a second removal of the patterned mask layer.

[0079] S160: Form a passivation material layer 31 on the top metal layer 22, and etch the passivation material layer 31 to form a passivation layer 23. Among them, the passivation layer 23 exposes a partial surface of the top metal layer 22 to form a pad. Among them, the structure after the top metal layer 22 and the passivation material layer 31 are formed is as Figure 3 shown, and the structure after the passivation layer 23 and the liquid protection thin film 24 are formed is as Figure 4 shown.

[0080] In one embodiment, S400: Form a protection layer 25 on the side of the top metal layer 22 away from the substrate structure 21, which specifically includes the following steps:

[0081] S410: Coat a protection material layer 32 on the top metal layer 22 and the passivation layer 23.

[0082] S420: Expose and develop the protection material layer 32 to form the protection layer 25.

[0083] In one embodiment, after S400: forming a protection layer 25 on the side of the top metal layer 22 away from the substrate structure 21, the following steps are further included:

[0084] S500: Perform a second heat treatment on the semiconductor structure. Among them, after this step is completed, a semiconductor device can be formed. By performing a second heat treatment on the semiconductor structure, on the one hand, the water vapor in the semiconductor structure can be removed, that is, the liquid protection thin film 24 is evaporated, improving the reliability of the semiconductor device; on the other hand, it is equivalent to performing a re-alloying process on the semiconductor structure, improving the performance of the semiconductor device.

[0085] In one embodiment, after S500: performing a second heat treatment on the semiconductor structure, the following steps are further included:

[0086] S600: Perform defect detection on the semiconductor device. In this way, it is possible to prevent defective products from flowing into the market and ensure the reliability of the use of the semiconductor device.

[0087] It should be noted that, as shown in Figure 8 The applicant has conducted tests on the traditional manufacturing method and the manufacturing method provided by the embodiments of the present application respectively. As can be seen from the figure, the manufacturing method provided by the embodiments of the present application can significantly reduce the number of defects on the surface of the top metal layer 22, and can control the number of defects on the surface of the top metal layer 22 within 10, which is beneficial to improving the yield of the device.

[0088] Based on the descriptions of the above embodiments, more specific embodiments and accompanying drawings are presented below for detailed illustration.

[0089] Referring to Figure 9 as shown, a method for fabricating a semiconductor device includes:

[0090] S1: Provide a substrate structure 21.

[0091] S2: Form a metal material layer on the substrate structure 21. Exemplarily, the material of the metal material layer is aluminum.

[0092] S3: Form a patterned mask layer on the metal material layer.

[0093] S4: Etch the metal material layer to form a top metal layer 22.

[0094] S5: Remove the patterned mask layer. Exemplarily, the patterned mask layer can be removed for the first time by a dry process and then removed for the second time by a wet process.

[0095] S6: Form a passivation material layer 31 on the top metal layer 22 and etch the passivation material layer 31 to form a passivation layer 23.

[0096] S7: Perform a first heat treatment on the semiconductor structure.

[0097] S8: Clean the top metal layer 22 with a cleaning solution to form a liquid protection film 24 on the surface of the top metal layer 22.

[0098] Among them, the specific cleaning process is shown in the following table.

[0099] Cleaning Process Parameter Table

[0100] step time(s) speed(rpm) Dispense (Pipeline Allocation) 1 3 1000 2 2 10 1000 7,12 3 3 1000 2 4 6 1000 2 5 20 3000 4 6 3 0 0

[0101] From the above cleaning process parameter table, it can be seen that: the first step to the fourth step are equivalent to cleaning at the first rotation speed (1000 rpm), and the total cleaning duration is 22 s. The fifth step is equivalent to cleaning at the second rotation speed (3000 rpm), and the total cleaning duration is 20 s. The sixth step is the deceleration stage and no cleaning is performed. Under the above cleaning process, it is beneficial to make the uniformity of the finally formed liquid protection film 24 better, so that the liquid protection film 24 has a uniform protection performance on the surface of the top metal layer 22.

[0102] S9: Coat a protection material layer 32 on the top metal layer 22 and the passivation layer 23.

[0103] S10: Expose and develop the protection material layer 32 to form a protection layer 25.

[0104] S11: Perform a second heat treatment on the semiconductor structure. After this step is completed, a semiconductor device can be formed.

[0105] S12: Perform defect detection on the semiconductor device.

[0106] It should be understood that in the embodiments of the present application, at least some of the steps in the drawings may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or in turn with at least some of the steps or stages in other steps or other steps.

[0107] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0108] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A manufacturing method of a semiconductor device, characterized in that, comprising: providing a semiconductor structure, the semiconductor structure including a substrate structure and a top metal layer disposed on one side of the substrate structure; performing a first heat treatment on the semiconductor structure; cleaning the top metal layer with a cleaning solution to form a liquid protection film on the surface of the top metal layer; forming a protection layer on the side of the top metal layer away from the substrate structure.

2. The manufacturing method of the semiconductor device according to claim 1, characterized in that, rotating the semiconductor structure at different speeds and cleaning the top metal layer.

3. The manufacturing method of the semiconductor device according to claim 1, characterized in that, the step of cleaning the top metal layer to form a liquid protection film on the surface of the top metal layer includes: rotating the semiconductor structure at a first preset speed and cleaning the top metal layer for a first preset duration; rotating the semiconductor structure at a second preset speed and cleaning the top metal layer for a second preset duration.

4. The manufacturing method of the semiconductor device according to claim 3, characterized in that, the first preset speed is less than the second preset speed.

5. The manufacturing method of the semiconductor device according to claim 3, characterized in that, the first preset duration is greater than the second preset duration.

6. The manufacturing method of the semiconductor device according to claim 3, characterized in that, the first preset speed is between 500 rpm - 1500 rpm; and / or, the second preset speed is between 2000 rpm - 4000 rpm; and / or, the first preset duration is between 10 s - 30 s; and / or, the second preset duration is between 10 s - 30 s.

7. The manufacturing method of the semiconductor device according to any one of claims 1 - 6, characterized in that, the cleaning solution is a neutral solution.

8. The manufacturing method of the semiconductor device according to claim 7, characterized in that, the cleaning solution is an insulating solution; and / or, the cleaning solution includes deionized water.

9. The manufacturing method of the semiconductor device according to any one of claims 1 - 6, characterized in that, the material of the top metal layer includes aluminum, and the material of the protection layer includes polyimide.

10. The manufacturing method of the semiconductor device according to any one of claims 1 - 6, characterized in that, after the step of forming a protection layer on the side of the top metal layer away from the substrate structure, it further includes: performing a second heat treatment on the semiconductor structure.

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