TVS device and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductor devices, and discloses a TVS device and a manufacturing method thereof.The TVS device comprises a shell, a product crystal grain, a resistor, a first frame, a first diode, a second diode, a second frame and a third frame, the product crystal grain, the resistor, the first frame, the first diode, the second diode, the second frame and the third frame are arranged in the shell in a penetrating mode, and the product crystal grain is arranged on the second frame; the resistor is respectively connected with the second frame and the third frame; the first frame is respectively connected with the second frame and the third frame, the first diode and the second diode are arranged on the first frame in parallel, and the directions of the first diode and the second diode are opposite. According to the TVS device, the capacitance value requirement can be met, the low-pass function with the frequency below 10 KHz is achieved, and in a communication circuit, the surge bearing capacity of a product can be improved while high-frequency interference can be absorbed and the frequency selection function of the product is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a TVS device and a method for manufacturing the TVS device. Background Art

[0002] With the rapid development of electronic products, products are gradually becoming more intelligent, and the communication requirements within and between electronic products are constantly increasing. For the security of communication information, most of them use wired communication. The problem that comes with it is that the probability of interference from the surrounding environment and transient induced electromotive force interference is rising sharply. Due to the improvement of IC (Integrated Circuit) chip technology, the chip has poor tolerance and the capacitance requirements for protection devices for communication lines are high.

[0003] In the related technologies, the capacitance of TVS (Transient Voltage Suppressor) devices cannot meet the requirements and they have no frequency selection and screening function. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a TVS device which meets the capacitance requirements and has a low-pass function below 10KHz.

[0005] The technical solution adopted by the present invention is as follows: A TVS device comprises: a shell, and a product crystal grain, a resistor, a first frame, a first diode and a second diode arranged in the shell, and a second frame and a third frame inserted in the shell, wherein the product crystal grain is arranged on the second frame; the resistor is connected to the second frame and the third frame respectively; the first frame is connected to the second frame and the third frame respectively, the first diode and the second diode are arranged in parallel on the first frame, and the directions of the first diode and the second diode are opposite.

[0006] A manufacturing method of a TVS device, the housing includes an upper housing and a lower housing, and the manufacturing method includes the following steps: obtaining a welding quality analysis model, and respectively obtaining target welding operation data of the welding points between the resistor and the second frame and the third frame, between the first frame and the second frame and the third frame, between the first diode and the first frame, and between the second diode and the first frame according to the welding quality analysis model, and welding each welding point according to the target welding operation data; respectively setting self-expanding connection thin layers between the second frame and the third frame and the upper housing and / or the lower housing, and between the upper housing and the lower housing; refining the self-expanding connection thin layers by a contactless ignition method to achieve closed connection between the second frame and the third frame and the upper housing and / or the lower housing, and between the upper housing and the lower housing through combustion synthesis technology.

[0007] In an embodiment of the present invention, obtaining the welding quality analysis model includes the following steps: obtaining welding material specification data, welding operation data, and welding effect indicators in the historical welding process of the manufacturing factory; obtaining a welding quality analysis function according to the welding effect indicators, and calculating a welding quality score according to the welding quality analysis function; using the welding material specification data and the welding operation data as inputs, and using the welding quality score as an output, training to obtain the welding quality analysis model.

[0008] In an embodiment of the present invention, the welding effect indicators include a welding material loss rate, a quality comprehensive evaluation index, and a process reliability index.

[0009] In an embodiment of the present invention, the welding quality analysis function is obtained according to the welding effect indicators through the following formula: , where, R is the welding quality score, is the process reliability index, is the quality comprehensive evaluation index, is the welding material loss rate.

[0010] In an embodiment of the present invention, the self-expanding connection thin layer includes a first filler metal layer, a combustion synthesis multi-layer film, and a second filler metal layer deposited layer by layer, wherein the melting temperature of the first filler metal layer and / or the second filler metal layer is less than the instantaneous temperature peak value of the combustion synthesis multi-layer film.

[0011] In one embodiment of the present invention, the melting temperature of the first filling metal layer and / or the second filling metal layer continuously changes in a decreasing trend in the first direction along the combustion synthesis multi-layer film, and the difference in melting temperature at different positions forms a stable change trend.

[0012] Advantages of the present invention: In the present invention, two diodes connected in parallel are connected in series with the product crystal grains, thereby reducing the overall capacitance value of the TVS device. By adjusting the parameters of the first diode and the second diode, the TVS device meets the capacitance requirement. In addition, a RC parallel frequency-selective low-pass network is formed with a resistor, so that the TVS device has a low-pass function below 10KHz. In a communication circuit, high-frequency interference can be absorbed, the frequency-selective function of the product can be improved, and at the same time, the surge withstand capacity of the product can be improved. Description of the drawings

[0013] Figure 1 is a schematic structural diagram of the TVS device according to an embodiment of the present invention; Figure 2 is a flowchart of the manufacturing method of the TVS device according to an embodiment of the present invention. Detailed implementation manners

[0014] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0015] Figure 1 is a schematic structural diagram of the TVS device according to an embodiment of the present invention.

[0016] As Figure 1 shown, the TVS device according to an embodiment of the present invention may include a housing 100, and a product crystal grain 200, a resistor 300, a first frame 400, a first diode 500 and a second diode 600 disposed in the housing 100, and a second frame 700 and a third frame 800 inserted through the housing.

[0017] Among them, the product crystal grain 200 is disposed on the second frame 700; the resistor 300 is respectively connected to the second frame 700 and the third frame 800; the first frame 400 is respectively connected to the second frame 700 and the third frame 800, the first diode 500 and the second diode 600 are disposed in parallel on the first frame 400, and the directions of the first diode 500 and the second diode 600 are opposite.

[0018] Specifically, two diodes (the first diode 500 and the second diode 600) connected in parallel are connected in series with the product die 200, thereby reducing the overall capacitance value of the TVS device. Among them, by adjusting the parameters of the first diode 500 and the second diode 600, the TVS device meets the capacitance value requirement. In addition, it forms an RC parallel frequency-selective low-pass network with the resistor 300, enabling the TVS device to have a low-pass function below 10 KHz. In a communication circuit, it can absorb high-frequency interference, improve the frequency-selective function of the product, and at the same time enhance the surge withstand capacity of the product.

[0019] The TVS device according to an embodiment of the present invention includes: a housing, and a product die, a resistor, a first frame, a first diode, and a second diode disposed inside the housing, and a second frame and a third frame inserted through the housing. Among them, the product die is disposed on the second frame; the resistor is respectively connected to the second frame and the third frame; the first frame is respectively connected to the second frame and the third frame, the first diode and the second diode are disposed in parallel on the first frame, and the directions of the first diode and the second diode are opposite. Thus, two diodes connected in parallel are connected in series with the product die, thereby reducing the overall capacitance value of the TVS device. By adjusting the parameters of the first diode and the second diode, the TVS device meets the capacitance value requirement. In addition, it forms an RC parallel frequency-selective low-pass network with the resistor, enabling the TVS device to have a low-pass function below 10 KHz. In a communication circuit, it can absorb high-frequency interference, improve the frequency-selective function of the product, and at the same time enhance the surge withstand capacity of the product.

[0020] Corresponding to the TVS device of the above embodiment, the present invention also proposes a manufacturing method of a TVS device.

[0021] As Figure 2 shown, the manufacturing method of the TVS device according to an embodiment of the present invention may include the following steps: S1, obtain a welding quality analysis model, and respectively obtain the target welding operation data of the welding points between the resistor and the second frame and the third frame, between the first frame and the second frame and the third frame, between the first diode and the first frame, and between the second diode and the first frame according to the welding quality analysis model, and perform welding on each welding point according to the target welding operation data.

[0022] In an embodiment of the present invention, obtaining the welding quality analysis model includes the following steps: S11, obtain the welding material specification data, welding operation data, and welding effect indicators during the historical welding process of the manufacturing factory.

[0023] Among them, the welding material specification data may include: the material of the welding material, the thickness of the welding material, and the welding point condition of the welding material (for example, smoothness, whether glue is applied); the welding operation data may include: welding current, clamping force, welding duration, etc.; the welding effect indicators may include the welding material loss rate, the comprehensive quality evaluation index, and the process reliability index. Among them, the comprehensive quality evaluation index can be calculated based on the defect influence degree, the compliance score of process parameters, and the material property correlation parameters; the process reliability index is used to quantify the stability of welding and the consistency of output quality, covering dimensions such as equipment performance, process parameter control, and quality verification, and may include the process parameter stability index, the welding forming index, and the non-destructive testing index, that is, the process parameter stability index, the welding forming index, and the non-destructive testing index can be weighted and calculated to obtain the welding effect index.

[0024] S12. Obtain a welding quality analysis function according to the welding effect index, and calculate a welding quality score according to the welding quality analysis function.

[0025] In an embodiment of the present invention, the welding quality analysis function can be obtained through the following formula according to the welding effect index: , Among them, R is the welding quality score, is the process reliability index, is the comprehensive quality evaluation index, is the welding material loss rate.

[0026] S13. Use the welding material specification data and the welding operation data as inputs, and use the welding quality score as the output to train and obtain a welding quality analysis model.

[0027] That is to say, in an embodiment of the present invention, historical data information can be obtained from the historical welding process of the manufacturing factory first, including the welding material specification data, the welding operation data, and the welding effect index. The specific obtaining method is not limited. For example, it can be retrieved from the database. Then, obtain a welding quality analysis function according to the welding effect index, and calculate a welding quality score according to the welding quality analysis function. Then, use the welding material specification data and the welding operation data as inputs, and use the welding quality score as the output to train and obtain a welding quality analysis model.

[0028] Finally, according to the welding quality analysis model, analyze the welding quality scores of the welding points between the resistor and the second frame and the third frame, between the first frame and the second frame and the third frame, between the first diode and the first frame, and between the second diode and the first frame respectively, and respectively select the welding operation data with the maximum welding quality score to perform welding operations on the corresponding welding points.

[0029] Thus, optimal welding operation data can be obtained for each welding point, resulting in a better welding effect for each welding point.

[0030] S2. Self-expanding connection thin layers are respectively arranged between the second frame and the third frame and the upper shell and / or the lower shell, and between the upper shell and the lower shell.

[0031] Specifically, the second frame can be arranged on the upper shell, or on the lower shell, or between the upper shell and the lower shell; similarly, the third frame can be arranged on the upper shell, or on the lower shell, or between the upper shell and the lower shell.

[0032] In an embodiment of the present invention, the self-expanding connection thin layer includes a first filler metal layer, a combustion synthesis multi-layer film, and a second filler metal layer deposited layer by layer, wherein the melting temperature of the first filler metal layer and / or the second filler metal layer is less than the instantaneous temperature peak value of the combustion synthesis multi-layer film.

[0033] Among them, the first filler metal layer and / or the second filler metal layer may include a bismuth metal-based composite material, a zinc alloy die-casting material, or an aluminum-based composite material. The combustion synthesis multi-layer film is a hetero-stack structure formed by alternately stacking a variety of negative enthalpy doped elements with sub-micron film thicknesses.

[0034] In an embodiment of the present invention, the melting temperature of the first filler metal layer and / or the second filler metal layer continuously changes in a decreasing trend in the first direction along the combustion synthesis multi-layer film, and the melting temperature differences at different positions form a stable change trend.

[0035] Thus, the melting temperature of the first filler metal layer and / or the second filler metal layer is less than the instantaneous temperature peak value of the combustion synthesis multi-layer film, the melting temperature of the first filler metal layer and / or the second filler metal layer continuously changes in a decreasing trend in the first direction along the combustion synthesis multi-layer film, and the melting temperature differences at different positions form a stable change trend. Thus, it can effectively ensure that the welding points can be fully refined and ensure the safety of the product grains in the shell.

[0036] In a specific embodiment of the present invention, the melting temperature range of the contact range between the first filler metal layer and / or the second filler metal layer and the combustion synthesis multi-layer film is 410°C to 1070°C, and the melting temperature range within the welding points of the first filler metal layer and / or the second filler metal layer is 240°C to 385°C.

[0037] S3. The self-expanding connection thin layer is refined by a non-contact ignition method to achieve a closed connection between the second frame and the third frame and the upper shell and / or the lower shell, and between the upper shell and the lower shell through combustion synthesis technology.

[0038] Among them, the contactless ignition method may include an energy beam ignition method.

[0039] Thus, the self-expanding connection thin layer is refined by using the contactless ignition method, so as to realize the closed connection between the second and third frames and the upper and / or lower shells and between the upper and lower shells through combustion synthesis technology. This can not only make the connection more reliable, but also avoid the damage to the product grains in the shell caused by too high welding temperature, with higher reliability.

[0040] In summary, according to the manufacturing method of the TVS device of the present invention, a welding quality analysis model is obtained, and the target welding operation data of the welding points between the resistor and the second and third frames, between the first frame and the second and third frames, between the first diode and the first frame, and between the second diode and the first frame are respectively obtained according to the welding quality analysis model. Then, each welding point is welded according to the target welding operation data. Self-expanding connection thin layers are respectively arranged between the second and third frames and the upper and / or lower shells and between the upper and lower shells. The self-expanding connection thin layer is refined by using the contactless ignition method, so as to realize the closed connection between the second and third frames and the upper and / or lower shells and between the upper and lower shells through combustion synthesis technology. Thus, the optimal welding operation data can be obtained for each welding point, so that the welding effect of each welding point is better. Moreover, the self-expanding connection thin layer is refined by using the contactless ignition method, so as to realize the closed connection between the second and third frames and the upper and / or lower shells and between the upper and lower shells through combustion synthesis technology. This can not only make the connection more reliable, but also avoid the damage to the product grains in the shell caused by too high welding temperature, with higher reliability.

[0041] In the description of the present invention, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. The meaning of "a plurality" is two or more, unless otherwise specifically defined.

[0042] In the present invention, unless otherwise clearly specified and limited, the terms such as "installation", "connection", "connection", "fixation" and the like should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal connection of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0043] In the present invention, unless otherwise clearly specified or limited, the first feature being “on” or “under” the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being “above”, “over” and “on top of” the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature being “under”, “below” and “beneath” the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply indicates that the horizontal height of the first feature is less than that of the second feature.

[0044] In the description of this specification, the description with reference to terms such as “an embodiment”, “some embodiments”, “examples”, “specific examples”, or “some examples” etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not have to be directed to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0045] In addition, in each embodiment of the present invention, each functional unit can be integrated in a processing module, or each unit can exist physically alone, or two or more units can be integrated in a module. The above integrated module can be implemented in the form of hardware, or in the form of a software functional module. When the above integrated module is implemented in the form of a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0046] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A TVS device, characterized in that: It includes: a shell, and product crystal grains, resistors, a first frame, a first diode and a second diode arranged in the shell, and a second frame and a third frame inserted in the shell, wherein: The product grains are arranged on the second frame; The resistors are connected to the second frame and the third frame respectively; The first frame is connected to the second frame and the third frame respectively, the first diode and the second diode are arranged in parallel on the first frame, and the directions of the first diode and the second diode are opposite.

2. A method for manufacturing a TVS device according to claim 1, characterized in that: The housing comprises an upper housing and a lower housing, and the manufacturing method comprises the following steps: Acquire a welding quality analysis model, and acquire target welding operation data of welding points between the resistor and the second frame and the third frame, between the first frame and the second frame and the third frame, between the first diode and the first frame, and between the second diode and the first frame according to the welding quality analysis model, and weld each welding point according to the target welding operation data; A self-expanding connecting thin layer is provided between the second frame and the third frame and the upper shell and / or the lower shell, and between the upper shell and the lower shell; The self-expanding connecting thin layer is refined by a contactless ignition method, so as to realize a closed connection between the second frame and the third frame and the upper shell and / or the lower shell, and between the upper shell and the lower shell through combustion synthesis technology.

3. The method for manufacturing a TVS device according to claim 2, characterized in that: Acquiring the welding quality analysis model comprises the following steps: Obtain the weld material specification data, welding operation data and welding effect indicators during the historical welding process of the manufacturing plant; Acquire a welding quality analysis function according to the welding effect index, and calculate a welding quality score according to the welding quality analysis function; The welding quality analysis model is obtained by training by taking the welding product specification data and the welding operation data as input and the welding quality score as output.

4. The method for manufacturing a TVS device according to claim 3, characterized in that: The welding effect index includes welding material loss rate, quality comprehensive evaluation index and process reliability index.

5. The method for manufacturing a TVS device according to claim 4, characterized in that: According to the welding effect index, the welding quality analysis function is obtained by the following formula: ， in, R Score the quality of the weld, is the process reliability index, is the comprehensive quality evaluation index. is the welding material loss rate.

6. The method for manufacturing a TVS device according to claim 2, characterized in that: The self-expanding connecting thin layer includes a first filling metal layer, a combustion synthesis multilayer film, and a second filling metal layer deposited layer by layer, wherein the melting temperature of the first filling metal layer and / or the second filling metal layer is less than the instantaneous temperature peak of the combustion synthesis multilayer film.

7. The method for manufacturing a TVS device according to claim 6, characterized in that: The melting temperature of the first filling metal layer and / or the second filling metal layer varies continuously in a decreasing trend along the first direction of the combustion synthesis multilayer film, and the difference in melting temperature at different positions forms a stable variation trend.

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