Imaging system with small X-ray source
By designing a special structure of the target layer and support layer in the imaging system, ensuring that the electron beam penetrates the support layer without hitting any part of it, the problem of poor imaging effects in the prior art is solved, and efficient and clear X-ray imaging is achieved.
Patent Information
- Application Number
- CN202380073474.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-05
- Publication Date
- 2025-05-30
AI Technical Summary
When existing imaging systems use electron beams to guide X-ray generation, it is difficult to efficiently control the electron beam to penetrate the support layer without hitting any part of it, resulting in the X-ray detector being unable to effectively capture clear images.
A system is designed in which a target layer contains multiple target regions and is in direct physical contact with the support layer, which contains multiple holes to guide the electron beam through, while the X-ray detector takes an image based only on the interaction of the target X-ray with the object, ignoring the support X-ray.
The electron beam is achieved efficiently penetrating the support layer without impacting any part of it, thereby improving the clarity of the X-ray and image quality, and enhancing the imaging effect of the imaging system.
Smart Images
Figure CN120077462A_ABST
Abstract
Description
Background Art
[0001] An imaging system may include an electron source, a target layer, and an X-ray detector. An object to be imaged may be positioned between the target layer and the X-ray detector. The electron source may emit an electron beam toward a target area of the target layer to cause the target area to generate X-rays. The X-ray detector may capture an image of the object based on the interaction between the X-rays and the object. Summary of the Invention
[0002] Disclosed in the present application is a system including: an electron source configured to generate an electron beam; a support layer including M holes (hole (i), i = 1,..., M), where M is a positive integer; and a target layer that (A) is located on the support layer and (B) includes M target areas (target area (i), i = 1,..., M). For each value of i, when only one value of i is used at a time, the electron source is configured to direct the electron beam to the target area (i), so that the target area (i) generates X-rays (i) from the target area (i), while the electron beam passes through the support layer via the hole (i) without hitting any part of the support layer.
[0003] In one aspect, the system further includes an X-ray detector. For each value of i, the X-ray detector is configured to capture an image (i) of the object based on the interaction between the X-rays (i) and the same object.
[0004] In one aspect, M > 1.
[0005] In one aspect, the target layer contains platinum, tungsten, copper, or a combination thereof.
[0006] In one aspect, the target layer contains carbon, beryllium, or a combination thereof.
[0007] In one aspect, the thickness of the target layer measured in a direction perpendicular to the target layer is less than the electron mean free path of the electron beam in the target layer.
[0008] In one aspect, the support layer contains silicon.
[0009] In one aspect, the target layer is in direct physical contact with the support layer.
[0010] Disclosed in this application is a method of using the above system. For each value of i, when only one value of i is used each time, the method includes: guiding the electron beam to the target area (i), so that the target area (i) generates the X-ray (i) from the target area (i); and using the same X-ray detector to capture an image (i) of the object based on the interaction between the X-ray (i) and the same object, while the electron beam passes through the support layer via the hole (i) without hitting any part of the support layer.
[0011] Disclosed in this application is a system, including: an electron source configured to generate an electron beam; a support layer including M support areas (support area (i), i = 1,..., M), where M is a positive integer; a target layer, (A) located on the support layer and (B) including M target areas (target area (i), i = 1,..., M); and an X-ray detector. For each value of i, when only one value of i is used each time, the electron source is configured to simultaneously guide the electron beam to (A) the target area (i) and (B) the support area (i), so that the target area (i) generates the target X-ray (i) from the target area (i), and thus the support area (i) generates the support X-ray (i) from the support area (i), and the X-ray detector is configured to (A) capture an image (i) of the object based on the interaction between the target X-ray (i) and the same object and (B) not based on any interaction between the support X-ray (i) and the object.
[0012] In one aspect, the X-ray detector is configured not to detect the support X-ray (i), i = 1,..., M.
[0013] In one aspect, the system further includes a filter layer, the filter layer (A) is positioned between the support layer and the X-ray detector and (B) is configured to block the support X-ray (i), i = 1,..., M.
[0014] In one aspect, the system further includes a filter layer, the filter layer (A) is positioned between (i) the combination of the target layer and the support layer and (ii) the X-ray detector, and (B) is configured to attenuate the target X-ray (i), i = 1,..., M and the support X-ray (i), i = 1,..., M to different degrees.
[0015] In one aspect, the system further includes a grating that (A) is positioned between (i) the combination of the target layer and the support layer and (ii) the X-ray detector, (B) is configured to align the target X-rays (i), i = 1, …, M, at the X-ray detector, and (C) is configured to misalign the support X-rays (i), i = 1, …, M, at the X-ray detector.
[0016] In one aspect, the support layer is configured to block a wavelength range of the target X-rays (i), where i = 1, …, M.
[0017] In one aspect, (A) the target layer contains platinum and the support layer contains aluminum, or (B) the target layer contains copper and the support layer contains nickel.
[0018] In one aspect, the target layer contains a polymer.
[0019] In one aspect, the thickness of the target layer measured in a direction perpendicular to the target layer is less than the electron mean free path of the electrons in the target layer.
[0020] In one aspect, the target layer is in direct physical contact with the support layer.
[0021] Disclosed herein is a method of using the above system. The method includes: for each value of i, when using only one value of i at a time, directing the electron beam to the target area (i) such that the target area (i) generates the target X-rays (i) from the target area (i); and using the X-ray detector to take an image (i) of the object based on the interaction between the target X-rays (i) and the object. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 Schematically shows an imaging system according to an embodiment.
[0023] Figure 2 AND Figure 3 Shows the target structure of the imaging system according to an embodiment Figure 1 of.
[0024] Figure 4 Shows a flowchart summarizing the operation of the imaging system according to an embodiment Figure 1 of.
[0025] Figure 5 Schematically shows an imaging system according to an alternative embodiment.
[0026] Figure 6 Shows a flowchart summarizing the operation of the imaging system according to an embodiment Figure 5 of.
[0027] Figure 7 and Figure 8 schematically shows an imaging system according to an alternative embodiment Figure 5 . DETAILED DESCRIPTION
[0028] Imaging system 100
[0029] Figure 1 schematically shows an imaging system 100 according to an embodiment. In one embodiment, the imaging system 100 may include an electron source 110, a target structure 120+130, and an X-ray detector 140.
[0030] Electron source 110
[0031] In one embodiment, the electron source 110 may generate an electron beam 115 directed towards the target structure 120+130. In one embodiment, the electron beam 115 may be a pencil beam. The electron source 110 may have any suitable structure. For example, the electron source 110 may be a thermionic source or a field emission source. The electron source 110 may include electron optics for guiding and shaping the electron beam 115.
[0032] Target structure 120+130
[0033] In one embodiment, the target structure 120+130 may include a target layer 120 and a support layer 130.
[0034] Figure 2 shows a perspective view of a target structure 120+130 according to an embodiment Figure 1 . Figure 3 shows Figure 2 a cross-sectional view of the target structure 120+130 along plane 3.
[0035] In one embodiment, referring to Figure 1 , the target layer 120 may be located on the support layer 130. In one embodiment, the target layer 120 may be in direct physical contact with the support layer 130.
[0036] In one embodiment, the target layer 120 may be located between the electron source 110 and the support layer 130 (as shown in Figure 1 ). In an alternative embodiment, the support layer 130 may be located between the electron source 110 and the target layer 120 (i.e., the target structure 120+130 of Figure 1 is flipped upside down as shown in Figure 2 and Figure 3 ).
[0037] In one embodiment, the chemical composition of the target layer 120 may be different from the chemical composition of the support layer 130.
[0038] Target layer 120
[0039] In one embodiment, referring to Figures 1 to 3 , the target layer 120 may include one or more target regions 125 (e.g., target regions 125a, 125b, and 125c).
[0040] In one embodiment, the target layer 120 may contain heavy elements such as platinum, tungsten, copper, or combinations thereof. In one embodiment, the target layer 120 may further contain support elements such as carbon, beryllium, or combinations thereof. For example, the target layer 120 may be a film formed of a heavy element (e.g., a film formed of platinum). For example, the target layer 120 may be a film formed of a support element (e.g., a film formed of carbon or beryllium) and have heavy elements on or within the film.
[0041] In one embodiment, the thickness of the target layer 120 measured in a direction perpendicular to the target layer 120 may be less than the mean free path of electrons of the electron beam 115 in the target layer 120. Thus, when electrons of the electron beam 115 enter the target layer 120, the electron may (A) pass through the target layer 120 without hitting any atoms of the target layer 120, or (B) hit only one atom of the target layer 120 and thereby cause X-rays to be generated from that atom. This means that the electron may not scatter around inside the target layer 120 by hitting multiple atoms, thereby causing X-rays to be generated from multiple atoms.
[0042] Support layer 130
[0043] In one embodiment, referring to Figures 1 to 3 , the support layer 130 may include one or more holes 135 (e.g., 3 holes 135a, 135b, and 135c) corresponding one-to-one with the target regions 125. In one embodiment, the target regions 125a, 125b, and 125c may be respectively located on the holes 135a, 135b, and 135c and cover the holes 135a, 135b, and 135c (as shown in the figure). In one embodiment, the hole 135 is a through hole (i.e., the hole 135 penetrates the entire thickness of the support layer 130). In one embodiment, the hole 135 is a blind hole (i.e., the hole 135 does not penetrate the entire thickness of the support layer 130).
[0044] In one embodiment, the support layer 130 may contain silicon. For example, the target layer 120 may be formed on the support layer 130 before the holes 135 are formed (e.g., by etching silicon).
[0045] In one embodiment, the support layer 130 may be conductive. Thus, the support layer 130 may provide a path for electrons accumulated in the target layer 120 (due to electron bombardment) to be released to electrical ground.
[0046] Object 190
[0047] In one embodiment, referring to Figure 1 , the object 190 can be positioned between the target structures 120 + 130 and the X-ray detector 140 (as shown).
[0048] Operation of the imaging system 100
[0049] In one embodiment, referring to Figure 1 , the imaging system 100 can operate as follows.
[0050] In one embodiment, an electron beam 115 can be directed to the target area 125a such that the target area 125a generates a first X-ray (not shown) from the target area 125a, while the electron beam 115 passes through the support layer 130 via the aperture 135a without hitting any part of the support layer 130. In one embodiment, the X-ray detector 140 can capture a first image of the object 190 based on the interaction between the first X-ray and the object 190.
[0051] The interaction between the first X-ray and the object 190 can include, for example, the following cases: (A) some of the radiation particles of the first X-ray incident on the object 190 are blocked by the object 190, and (B) some of the radiation particles of the first X-ray incident on the object 190 travel through the object 190 without changing their direction.
[0052] In one embodiment, after the X-ray detector 140 captures the first image of the object 190, the electron beam 115 can be directed to the target area 125b such that the target area 125b generates a second X-ray (not shown) from the target area 125b, while the electron beam 115 passes through the support layer 130 via the aperture 135b without hitting any part of the support layer 130. In one embodiment, the X-ray detector 140 can capture a second image of the object 190 based on the interaction between the second X-ray and the object 190.
[0053] In one embodiment, after the X-ray detector 140 captures the second image of the object 190, the electron beam 115 can be directed to the target area 125c such that the target area 125c generates a third X-ray (not shown) from the target area 125c, while the electron beam 115 passes through the support layer 130 via the aperture 135c without hitting any part of the support layer 130. In one embodiment, the X-ray detector 140 can capture a third image of the object 190 based on the interaction between the third X-ray and the object 190.
[0054] Flowchart summarizing the operation of the imaging system 100
[0055] Figure 4 Illustrating the summary according to an embodiment Figure 1Flowchart 400 of the operation of imaging system 100.
[0056] In step 410, for each value of i, when using only one value of i at a time, the operation may include: guiding an electron beam to target area (i), such that target area (i) generates X-ray (i) from target area (i); and using the same X-ray detector to capture an image (i) of the object based on the interaction between X-ray (i) and the same object, while the electron beam passes through the support layer via aperture (i) without hitting any part of the support layer. For example, in the above embodiment, referring to Figure 1 , for the first image of object 190, electron beam 115 is guided to target area 125a, such that target area 125a generates a first X-ray from target area 125a, and X-ray detector 140 captures the first image of object 190 based on the interaction between the first X-ray and object 190, while electron beam 115 passes through support layer 130 via aperture 135a without hitting any part of support layer 130. Then, the second image of object 190 is captured in a similar manner and then the third image of object 190 is captured.
[0057] Imaging system 500
[0058] Figure 5 Schematically shows an imaging system 500 according to an embodiment. In one embodiment, imaging system 500 may include an electron source 510, a target structure 520 + 530, and an X-ray detector 540.
[0059] Electron source 510
[0060] In one embodiment, referring to Figure 5 , electron source 510 may generate an electron beam 515 directed towards target structure 520 + 530. In one embodiment, electron beam 515 may be a pencil beam. In one embodiment, electron beam 515 may be focused onto a beam spot on target structure 520 + 530.
[0061] Target structure 520 + 530
[0062] In one embodiment, referring to Figure 5 , target structure 520 + 530 may include a target layer 520 and a support layer 530. In one embodiment, target layer 520 may be located on support layer 530, as shown. In one embodiment, target layer 520 may be in direct physical contact with support layer 530.
[0063] In one embodiment, target layer 520 may be located between electron source 510 and support layer 530 (as shown).
[0064] In one embodiment, the chemical composition of the target layer 520 may be different from that of the support layer 530.
[0065] In one embodiment, the target layer 520 may include platinum; and the support layer 530 may include aluminum. Alternatively, the target layer 520 may include copper; and the support layer 530 may include nickel. In one embodiment, the target layer 520 may include a polymer.
[0066] Target layer 520
[0067] In one embodiment, referring to Figure 5 ..., the target layer 520 may include one or more target regions 525 (e.g., target regions 525a, 525b, and 525c).
[0068] In one embodiment, the thickness of the target layer 520 measured in a direction perpendicular to the target layer 520 may be less than the electron mean free path of the electron beam 515 in the target layer 520.
[0069] Support layer 530
[0070] In one embodiment, referring to Figure 5 ..., the support layer 530 may include one or more support regions 535 (e.g., support regions 535a, 535b, and 535c) that correspond one-to-one with the target regions 525.
[0071] Object 590
[0072] In one embodiment, referring to Figure 5 ..., the object 590 may be positioned between the target structure 520 + 530 and the X-ray detector 540 (as shown).
[0073] Operation of the imaging system 500
[0074] In one embodiment, referring to Figure 5 ..., the imaging system 500 may operate as follows.
[0075] In one embodiment, the electron beam 515 may be simultaneously directed to (A) the target region 525a and (B) the support region 535a, such that the target region 525a generates a first target X-ray (not shown) from the target region 525a, and such that the support region 535a generates a first support X-ray (not shown) from the support region 535a. The electron beam 515 may be simultaneously directed to the target region 525a and the support region 535a because the electron beam 515 may penetrate the target region 525a. In one embodiment, the X-ray detector 540 may capture a first image of the object 590 (A) based on the interaction between the first target X-ray and the object 590 and (B) not based on any interaction between the first support X-ray and the object 590.
[0076] In one embodiment, after the X-ray detector 540 captures a first image of the object 590, the electron beam 515 can be simultaneously directed to (A) the target region 525b and (B) the support region 535b, such that the target region 525b generates a second target X-ray (not shown) from the target region 525b, and such that the support region 535b generates a second support X-ray (not shown) from the support region 535b. In one embodiment, the X-ray detector 540 can capture a second image of the object 590 (A) based on the interaction between the second target X-ray and the object 590 and (B) not based on any interaction between the second support X-ray and the object 590.
[0077] In one embodiment, after the X-ray detector 540 captures a second image of the object 590, the electron beam 515 can be simultaneously directed to (A) the target region 525c and (B) the support region 535c, such that the target region 525c generates a third target X-ray (not shown) from the target region 525c, and such that the support region 535c generates a third support X-ray (not shown) from the support region 535c. In one embodiment, the X-ray detector 540 can capture a third image of the object 590 (A) based on the interaction between the third target X-ray and the object 590 and (B) not based on any interaction between the third support X-ray and the object 590.
[0078] Flowchart summarizing the operation of the imaging system 500
[0079] Figure 6 Illustrating the summary according to an embodiment Figure 5 of the flowchart 600 of the operation of the imaging system 500.
[0080] In step 610, for each value of i, when only one value of i is used at a time, the operation can include: directing an electron beam to the target region (i), such that the target region (i) generates a target X-ray (i) from the target region (i); and using an X-ray detector to capture an image (i) of the object based on the interaction between the target X-ray (i) and the object. For example, in the above-described embodiment, referring Figure 5 , for the first image of the object 590, the electron beam 515 is directed to the target region 525a, such that the target region 525a generates a first target X-ray from the target region 525a; and the X-ray detector 540 captures the first image of the object 590 based on the interaction between the first target X-ray and the object 590. Then, the second image of the object 590 is captured in a similar manner and then the third image of the object 590 is captured.
[0081] Other embodiments of the imaging system 500
[0082] The support layer 530 blocks a wavelength range
[0083] In one embodiment, referring to Figure 5 , the support layer 530 may block a wavelength range of the first target X-ray, the second target X-ray, and the third target X-ray. For example, the material of the support layer 530 may cause radiation particles of the first target X-ray, the second target X-ray, and the third target X-ray having wavelengths greater than a predetermined wavelength to be blocked by the support layer 530.
[0084] The X-ray detector 540 does not detect the support X-ray
[0085] In one embodiment, referring to Figure 5 , the X-ray detector 540 may not detect the first support X-ray, the second support X-ray, and the third support X-ray. Accordingly, the X-ray detector 540 does not capture a first image, a second image, and a third image of the object 590 based on any interaction between the first support X-ray, the second support X-ray, and the third support X-ray and the object 590. Specifically, the X-ray detector 540 does not capture a first image of the object 590 based on any interaction between the first support X-ray and the object 590. Similarly, the X-ray detector 540 does not capture a second image of the object 590 based on any interaction between the second support X-ray and the object 590. Similarly, the X-ray detector 540 does not capture a third image of the object 590 based on any interaction between the third support X-ray and the object 590.
[0086] It should be noted that the above phrase "does not detect" means that the X-ray detector 540 receives but ignores radiation particles of the first support X-ray, the second support X-ray, and the third support X-ray.
[0087] Filter layer
[0088] In one embodiment, referring to Figure 7 , the imaging system 500 may include a filter layer 710 positioned between the target structure 520 + 530 and the X-ray detector 540. In one embodiment, the filter layer 710 may block the first support X-ray, the second support X-ray, and the third support X-ray. Accordingly, the X-ray detector 540 does not capture a first image, a second image, and a third image of the object 590 based on any interaction between the first support X-ray, the second support X-ray, and the third support X-ray and the object 590.
[0089] In one embodiment, the filter layer 710 may cause different degrees of attenuation of the first target X-ray, the second target X-ray, and the third target X-ray from the first support X-ray, the second support X-ray, and the third support X-ray. For example, the filter layer 710 may cause 50% attenuation of the first target X-ray, the second target X-ray, and the third target X-ray, and cause 100% attenuation (i.e., complete blocking) of the first support X-ray, the second support X-ray, and the third support X-ray.
[0090] grating
[0091] In one embodiment, referring to Figure 8 , the imaging system 500 may include a grating 810 positioned between the target structure 520 + 530 and the X-ray detector 540. In one embodiment, the grating 810 may align the first target X-ray, the second target X-ray, and the third target X-ray at the X-ray detector 540, and may not align the first support X-ray, the second support X-ray, and the third support X-ray at the X-ray detector 540. Accordingly, the X-ray detector 540 does not capture the first image, the second image, and the third image of the object 590 based on any interaction between the first support X-ray, the second support X-ray, and the third support X-ray and the object 590.
[0092] Although various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for illustrative purposes and are not intended to be limiting, and the true scope and spirit are pointed out by the appended claims.
Claims
1. A system, comprising: an electron source configured to generate an electron beam; a support layer including M holes (hole (i), i = 1,..., M), where M is a positive integer; and a target layer that (A) is located on the support layer and (B) includes M target regions (target region (i), i = 1,..., M), wherein for each value of i, when only one value of i is used at a time, the electron source is configured to direct the electron beam to the target region (i), so that the target region (i) generates X-ray (i) from the target region (i), while the electron beam passes through the support layer via the hole (i) without hitting any part of the support layer.
2. The system according to claim 1, further comprising an X-ray detector, wherein, for each value of i, the X-ray detector is configured to take an image (i) of the object based on the interaction between the X-ray (i) and the same object.
3. The system according to claim 1, wherein, M＞1。 4. The system according to claim 1, wherein, the target layer contains platinum, tungsten, copper, or a combination thereof.
5. The system according to claim 4, wherein, the target layer contains carbon, beryllium, or a combination thereof.
6. The system according to claim 1, wherein, the thickness of the target layer measured in a direction perpendicular to the target layer is less than the electron mean free path of the electron beam in the target layer.
7. The system according to claim 1, wherein, the support layer contains silicon.
8. The system according to claim 1, wherein, the target layer is in direct physical contact with the support layer.
9. A method of using the system according to any one of claims 1 to 8, for each value of i, when only one value of i is used at a time, the method comprises: directing the electron beam to the target region (i), so that the target region (i) generates the X-ray (i) from the target region (i); and using the same X-ray detector to take an image (i) of the object based on the interaction between the X-ray (i) and the same object, while the electron beam passes through the support layer via the hole (i) without hitting any part of the support layer.
10. A system, comprising: an electron source configured to generate an electron beam; a support layer including M support regions (support region (i), i = 1,..., M), where M is a positive integer; a target layer that (A) is located on the support layer and (B) includes M target regions (target region (i), i = 1,..., M); and an X-ray detector, wherein for each value of i, when only one value of i is used at a time, the electron source is configured to direct the electron beam simultaneously to (A) the target region (i) and the support region (i), so that the target region (i) generates target X-ray (i) from the target region (i), and thereby the support region (i) generates support X-ray (i) from the support region (i), and The X-ray detector is configured to (A) image the object (i) based on the interaction of the target X-ray (i) with the same object and (B) not based on any interaction of the support X-ray (i) with the object.
11. The system according to claim 10, wherein, the X-ray detector is configured not to detect the support X-ray (i), i = 1,..., M.
12. The system according to claim 10, further comprising a filter layer, the filter layer being (A) positioned between the support layer and the X-ray detector and (B) configured to block the support X-ray (i), i = 1,..., M.
13. The system according to claim 10, further comprising a filter layer, the filter layer being (A) positioned between (i) the combination of the target layer and the support layer and (ii) the X-ray detector, and (B) configured to attenuate the target X-ray (i), i = 1,..., M and the support X-ray (i), i = 1,..., M to different degrees.
14. The system according to claim 10, further comprising a grating, the grating being (A) positioned between (i) the combination of the target layer and the support layer and (ii) the X-ray detector, (B) configured to align the target X-ray (i), i = 1,..., M at the X-ray detector, and (C) configured not to align the support X-ray (i), i = 1,..., M at the X-ray detector.
15. The system according to claim 10, wherein, the support layer is configured to block a wavelength range of the target X-ray (i), i = 1,..., M.
16. The system according to claim 10, wherein, (A) the target layer contains platinum and the support layer contains aluminum, or (B) the target layer contains copper and the support layer contains nickel.
17. The system according to claim 16, wherein, the target layer contains a polymer.
18. The system according to claim 10, wherein, the thickness of the target layer measured in a direction perpendicular to the target layer is less than the electron mean free path of the electron beam in the target layer.
19. The system according to claim 10, wherein, the target layer is in direct physical contact with the support layer.
20. A method of using the system according to any one of claims 10 to 19, for each value of i, when using only one value of i at a time, the method comprises: directing the electron beam to the target area (i) so that the target area (i) generates the target X-ray (i) from the target area (i); and using the X-ray detector to image the object (i) based on the interaction of the target X-ray (i) with the object.