A super high-speed probe card

Abstract

The present invention discloses an ultra-high-speed probe card, comprising: a test circuit board, a microelectromechanical system probe structure including a plurality of first probes, one end of each first probe being electrically connected to the test circuit board; the other end of the first probe serving as a first probe end; a support structure located on one side of the microelectromechanical system probe structure and having an inclined surface, the inclined surface having an included angle with the surface of the test circuit board, and the included angle being less than 60°; a lead frame structure including a plurality of second probes and conductive traces corresponding to the second probes; one end of each second probe being connected to one end of a conductive trace; the other end of the second probe serving as a second probe end; the first probe ends and the second probe ends being arranged adjacent to each other; the other end of the conductive trace extending along the inclined surface of the support structure to the surface of the test circuit board and being electrically connected to the test circuit board, optimizing the signal transmission path, reducing the signal transmission loss, and improving the signal transmission bandwidth and transmission stability.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor testing technologies, and in particular, to an ultra-high-speed probe card. Background Art

[0002] During various stages of the manufacturing process of integrated circuits or semiconductor devices, it is usually necessary to use a probe card to perform electrical tests and other functional tests. During the test process, the probe card forms contacts with the contact pads or solder bumps of the integrated circuit or semiconductor device to achieve signal transmission and reception.

[0003] For a traditional thin-film probe card, microstrip lines are deposited on an insulating film, and its signal transmission loss is large, which cannot meet the signal transmission requirements. Moreover, since the probe ends are fabricated using a thin-film solution, there are certain limitations on the number of pins and the parallel test quantity of a single test probe card. Summary of the Invention

[0004] The present invention provides an ultra-high-speed probe card, which realizes optimizing the signal transmission path, reducing the signal transmission loss, and improving the signal transmission bandwidth and transmission stability.

[0005] In a first aspect, embodiments of the present invention provide an ultra-high-speed probe card, including:

[0006] A test circuit board;

[0007] A microelectromechanical system (MEMS) probe structure, where the MEMS probe structure includes a plurality of first probes, and one end of each first probe is electrically connected to the test circuit board; the other end of each first probe serves as a first probe end;

[0008] A support structure, located on one side of the MEMS probe structure, and the surface of the support structure away from the test circuit board is an inclined surface; the inclined surface extends in a direction away from the MEMS probe structure, and the inclined surface forms an angle with the surface of the test circuit board; the angle is less than 60°;

[0009] A lead frame structure, including a plurality of second probes and conductive traces corresponding to the second probes; one end of each second probe is connected to one end of the conductive trace; the other end of each second probe serves as a second probe end; the first probe ends and the second probe ends are arranged adjacent to each other; the other end of the conductive trace extends along the inclined surface of the support structure to the surface of the test circuit board and is electrically connected to the test circuit board.

[0010] Optionally, the first probes are used to transmit ground signals, power supply signals, and digital signals less than 16 Gbps; the second probes are used to transmit ground signals, power supply signals, analog signals greater than 16 GHz, and digital signals greater than 32 Gbps.

[0011] Optionally, the lead frame structure further includes a filtering device, and the filtering device is connected between at least a pair of the conductive traces.

[0012] Optionally, the MEMS probe structure further includes a multi-layer organic substrate, and the multi-layer organic substrate is disposed between one end of the first probe and the test circuit board, and the multi-layer organic substrate is configured to provide a transfer line for electrically connecting the first probe and the test circuit board.

[0013] Optionally, the ultra-high speed probe card further includes: a first limiting plate and a second limiting plate;

[0014] The first limiting plate is disposed between the first probe and the test circuit board, and the first limiting plate includes a first limiting hole corresponding to one end of the first probe, and at least a part of the first probe passes through the first limiting hole and then is electrically connected to the test circuit board;

[0015] The second limiting plate is disposed on one side of the first probe end, and the second limiting plate includes a second limiting hole corresponding to the first probe end and the second probe end, and at least a part of the first probe end and the second probe end pass through the second limiting hole.

[0016] Optionally, the lead frame structure further includes an insulating film, and the insulating film covers at least the conductive traces.

[0017] Optionally, the second probe end and the first probe end are arranged in a regular pattern.

[0018] Optionally, the lead frame structure includes:

[0019] a substrate;

[0020] a first conductive layer located on one side of the substrate;

[0021] an insulating layer located on a side of the first conductive layer away from the substrate, the insulating layer includes a via hole that exposes at least a part of the first conductive layer;

[0022] a second conductive layer located on a side of the insulating layer away from the substrate; wherein, the second conductive layer includes a plurality of conductive traces, and at least one of the conductive traces is connected to the first conductive layer through the via hole; wherein, the conductive trace extends along a first direction, and the first direction intersects with a direction from the substrate pointing to the first conductive layer;

[0023] a conductive structure corresponding to the conductive trace and disposed on a side of the conductive trace away from the substrate, and the conductive structure serves as the second probe.

[0024] Optionally, the material of the insulating layer includes polyimide.

[0025] Optionally, the lead frame structure further includes: a filling layer, the filling layer is located in the via hole, and the filling layer is used for electrically connecting the conductive trace and the first conductive layer.

[0026] The ultra-high speed probe card provided by the embodiment of the present invention has a test circuit board carrying a microelectromechanical system probe structure, a support structure, and a lead frame structure. Among them, the microelectromechanical system probe structure adopts MEMS technology, and a first probe with a small pitch and a high number of pins can be obtained, so that the number of test pads that can be connected can be increased. Further, a lead frame structure is introduced, and the conductive traces in the lead frame structure are laid on the inclined surface of the support structure. The included angle between the inclined surface of the support structure and the surface of the test circuit board is less than 60°. Therefore, the support structure can be used to increase the signal transmission angle of the conductive traces, reduce the transmission loss of high-frequency signals, and improve the signal transmission bandwidth and transmission stability. Description of the Drawings

[0027] Figure 1 is an exploded structural schematic diagram of an ultra-high speed probe card provided by an embodiment of the present invention;

[0028] Figure 2 is an overall 3D assembly schematic diagram of the ultra-high speed probe card provided by an embodiment of the present invention;

[0029] Figure 3 is Figure 2 a schematic diagram of a partially enlarged local structure in

[0030] Figure 4 is a partial top view schematic diagram of the probe arrangement in an embodiment of the present invention;

[0031] Figure 5 is Figure 1 a schematic diagram of a cross-sectional structure along the AA' direction in

[0032] Figure 6 is Figure 5 a schematic diagram of a partially enlarged local structure of the dashed part in

[0033] Figure 7 is a schematic diagram of a lead frame structure provided by an embodiment of the present invention;

[0034] Figures 8 - 9 is a schematic diagram of an intermediate structure in the preparation process of a lead frame structure provided by an embodiment of the present invention. Detailed Embodiments

[0035] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0036] In a traditional thin-film probe card, microstrip lines are deposited on an insulating film. When the thin-film probe card is electrically connected to a device under test, two signal transmission routes that are approximately right-angled are often formed simultaneously. This results in a large transmission loss of the thin-film probe card when transmitting high-frequency signals, thereby affecting the signal transmission bandwidth and transmission stability. Moreover, since the probe ends are fabricated using a thin-film solution, there are certain limitations on the number of pins and the parallel test quantity of a single test probe card.

[0037] In view of this, Figure 1 FIG. is an exploded structural schematic diagram of a super-high-speed probe card provided by an embodiment of the present invention, Figure 2 FIG. is a 3D structural assembly schematic diagram of the super-high-speed probe card provided by an embodiment of the present invention, Figure 3 is Figure 2 a schematic diagram of a magnified partial structure in, see Figures 1 to 3 , and includes:

[0038] A test circuit board 110;

[0039] A microelectromechanical system probe structure 120, the microelectromechanical system probe structure 120 includes a plurality of first probes 121, one end of the first probe 121 is electrically connected to the test circuit board 110; the other end of the first probe 121 serves as a first probe end 122;

[0040] A support structure 130, located on one side of the microelectromechanical system probe structure 120, the surface of the support structure 130 away from the test circuit board 110 is an inclined surface; the inclined surface extends in a direction away from the microelectromechanical system probe structure 120, and the inclined surface forms an angle with the surface of the test circuit board 110; the angle is less than 60°;

[0041] A lead frame structure 140, including a plurality of second probes 141 and conductive traces 142 corresponding to the second probes 141; one end of the second probe 141 is connected to one end of the conductive trace 142; the other end of the second probe 141 serves as a second probe end 143; the first probe end 122 and the second probe end 143 are arranged adjacent to each other; the other end of the conductive trace 142 extends along the inclined surface of the support structure 130 to the surface of the test circuit board 110 and is electrically connected to the test circuit board 110.

[0042] Specifically, the test circuit board 110 is used to carry the microelectromechanical system probe structure 120, the support structure 130, and the lead frame structure 140. Among them, the test circuit board 110 can adopt a printed circuit board (PCB). The test circuit board 110 has electrical connections with the microelectromechanical system probe structure 120 and the lead frame structure 140. The test circuit board 110 is also connected to an external test device to ensure that the test signals of the test device can be transmitted through the test circuit board 110 to the microelectromechanical system probe structure 120 and the lead frame structure 140, and then transmitted to the unit under test by the microelectromechanical system probe structure 120 and the lead frame structure 140.

[0043] The microelectromechanical system probe structure 120 can provide the first probe 121. The microelectromechanical system probe structure 120 adopts micro-electrical-mechanical systems (MEMS) technology, and the first probe 121 can be made extremely fine to meet the test requirements of small pitch and high pin count, thereby increasing the number of test pads that can be connected. Among them, the first probe 121 can be designed according to the pad arrangement of the unit under test. For example, referring to Figure 3 , in the embodiment of the present invention, the first probe 121 is designed to be arranged in a row. There is an electrical connection between one end of the first probe 121 and the test circuit board 110. The other end of the first probe 121, as the first probe end 122, can contact the pad of the unit under test, so that the test signals of the test device can be transmitted to the chip under test, and the signals of the chip under test can also be transmitted to the test device.

[0044] The support structure 130 is arranged on one side of the microelectromechanical system probe structure 120. The surface of the support structure 130 away from the test circuit board 110 adopts an inclined surface. Here, the inclined surface means that the extension direction of the surface is not parallel to the surface of the test circuit board 110. That is to say, the support structure 130 provides a ramp-like structure. The inclined surface extends in a direction away from the microelectromechanical system probe structure 120 until it intersects with the surface of the test circuit board 110, and there is an included angle between the two, and the included angle is less than 60°. That is to say, in the direction of gradually moving away from the microelectromechanical system probe structure 120, the height of the support structure 130 becomes smaller and smaller. The side wall on the higher side of the support structure 130 can also provide lateral support and protection for the arranged first probes 121.

[0045] The lead frame structure 140 can provide a second probe 141 and a conductive trace 142 corresponding to the second probe 141. The conductive trace 142 is laid on the inclined surface of the support structure 130, and the inclined surface can be used to support the conductive trace 142. That is to say, the conductive trace 142 forms an electrical connection with the test circuit board 110 along the inclination trend of the inclined surface. Since the inclined surface has an included angle with the surface of the test circuit board 110, and this included angle is less than 60°, the signal transmission angle between the conductive trace 142 and the test circuit board 110 is at least greater than 120°, and the signal transmission angle between the conductive trace 142 and the second probe end 143 is at least greater than 90° and less than 150°. Therefore, the support structure 130 can be used to increase the signal transmission angle of the conductive trace 142, which is beneficial to reducing the transmission loss of high-frequency signals. Among them, the high-frequency signals can include analog signals greater than 16 GHz and digital signals greater than 32 Gbps, improving the signal transmission bandwidth and transmission stability. Exemplarily, in the embodiment of the present invention, the included angle between the inclined surface and the surface of the test circuit board 110 is set to 30°, which can meet the requirements for the length setting of the conductive leads and can also achieve reducing the transmission loss of high-frequency signals.

[0046] According to the positions of the pads of the unit to be tested, the first probe ends 122 and the second probe ends 143 can be designed with corresponding arrangement orders. Combining Figure 3 , exemplarily, the first probe ends 122 and the second probe ends 143 are arranged in a row. Multiple second probe ends 143 are grouped and arranged between the first probe ends 122. In other embodiments, the second probe ends 143 can also be arranged at the start or end positions of a row arrangement, and no specific limitation is made here. Among them, the arrangement shapes of the multiple first probe ends 122 and the second probe ends 143 can be regular shapes, such as circular, elliptical, rectangular, square or other regular polygons. Combining Figure 3 , in the embodiment of the present invention, four groups of first probe ends 122 and second probe ends 143 arranged in a row are provided. Each group of probe ends can enclose a square shape. Since each group of probe ends has a conductive trace 142, therefore, combining Figure 1 , multiple support structures 130 can also be arranged around the microelectromechanical system probe structure 120. That is to say, the support structure 130 can be arranged around the first probe 121. The side wall on the higher side of the support structure 130 can also provide lateral support and protection for the first probe 121. It should be noted that, exemplarily, in the embodiment of the present invention, three second probe ends 143 are taken as a group. In other embodiments, other numbers of second probe ends 143 can also be taken as a group. For example, four second probe ends 143 as a group or five second probe ends 143 as a group, etc. No specific limitation is made on the number of groups of the second probe ends 143, and it can be designed and arranged according to comprehensive considerations such as the test signals of the unit to be tested and the connection positions of the pads.

[0047] The ultra-high-speed probe card provided by the embodiment of the present invention, the test circuit board 110 bears the microelectromechanical system probe structure 120, the support structure 130 and the lead frame structure 140. Among them, the microelectromechanical system probe structure 120 adopts MEMS technology, and the first probe 121 with small pitch and high pin count can be obtained, so as to increase the number of test pads that can be connected. Further, the lead frame structure 140 is introduced, and the conductive trace 142 in the lead frame structure 140 is laid on the inclined surface of the support structure 130. The included angle between the inclined surface of the support structure 130 and the surface of the test circuit board 110 is less than 60°. Therefore, the support structure 130 can be used to increase the signal transmission angle of the conductive trace 142, reduce the transmission loss of high-frequency signals, and improve the signal transmission bandwidth and transmission stability.

[0048] Optionally, the first probe 121, as a MEMS probe, can transmit ground signals, power signals and low-speed signals during testing, such as IO signals less than 16 Gpbs. The conductive trace 142 connected to the second probe 141 can increase the signal transmission angle by using the support structure 130, avoiding the transmission loss of high-frequency signals caused by a small transmission angle. Among them, high-frequency signals include analog signals greater than 16 GHz and digital signals greater than 32 Gbps. Therefore, in some application scenarios of CP / FT testing of ultra-high-speed broadband optical modules and radar chips, such as 170 GHz optical modules and 90 GHz radar chips, the second probe 141 can be used to transmit high-frequency signals, so as to optimize the signal transmission path, reduce the transmission loss of high-frequency signals, and increase the bandwidth of the probe card to 90 GHz. In other application scenarios, the second probe 141 can also be generally used to transmit ground signals, power signals and low-speed signals, etc.

[0049] Figure 4 is a partial top view schematic diagram of the probe arrangement in the embodiment of the present invention. Combining Figure 3 , see Figure 4 Optionally, the lead frame structure 140 may further include a filtering device 144, and the filtering device 144 is connected between at least a pair of conductive traces 142. Specifically, the filtering device 144 can be arranged between the conductive traces 142, where the conductive traces 142 can be adjacent or not adjacent. When the conductive trace 142 outputs a power signal as a power output terminal, the filtering device 144 can be added at the power output terminal. Among them, the filtering device 144 can be a filtering circuit composed of an inductor and a capacitor, or a capacitor device, which plays a filtering role. In the embodiment of the present invention, exemplarily, the filtering device 144 can adopt a capacitor device. The first pole of the capacitor device is connected to one conductive trace 142, and the second pole of the capacitor device is connected to another conductive trace 142. By using the filtering effect of the capacitor device, the power integrity can be improved, and further the power anti-interference ability can be improved.

[0050] Figure 5 is Figure 1 a schematic cross-sectional structure diagram along the AA' direction in Figure 6 is Figure 5 a partially enlarged structure diagram of the dashed part in , see Figure 5 and Figure 6 , the MEMS probe structure 120 further includes a multi-layer organic substrate 123, and the multi-layer organic substrate 123 is disposed between one end of the first probe 121 and the test circuit board 110. The multi-layer organic substrate 123 is used to provide a transfer circuit to electrically connect the first probe 121 and the test circuit board 110.

[0051] Specifically, the distance between the first probes 121 in the MEMS probe structure 120 is relatively small. Therefore, it is also necessary to provide a multi-layer organic substrate 123 (Multi Layer Organic, MLO) with circuits inside, and use the multi-layer organic substrate 123 to realize the electrical connection between the plurality of first probes 121 and the test circuit board 110, so as to realize the spatial conversion of the circuits.

[0052] Optionally, the ultra-high-speed probe card further includes: a first limiting plate 150 and a second limiting plate 160;

[0053] The first limiting plate 150 is disposed between the first probe 121 and the test circuit board 110. The first limiting plate includes a first limiting hole, and the first limiting hole corresponds to one end of the first probe 121. At least a part of the first probe 121 passes through the first limiting hole and then is electrically connected to the test circuit board 110;

[0054] The second limiting plate 160 is disposed on one side of the first probe end 122. The second limiting plate 160 includes a second limiting hole, and the second limiting hole corresponds to the first probe end 122 and the second probe end 143. At least a part of the first probe end 122 and the second probe end 143 pass through the second limiting hole.

[0055] Specifically, the first limiting plate 150 is disposed on the side of the first probe 121 close to the test circuit board 110, and the first limiting hole on the first limiting plate 150 is set corresponding to the position of the first probe 121, and the first probe 121 can pass through the first limiting hole. Therefore, the position of the first probe 121 can be fixed by using the first limiting hole to achieve precise limiting, which is beneficial to realizing a stable connection with the multi-layer organic substrate 123.

[0056] Similarly, the second limiting plate 160 is disposed on a side close to the first probe end 122 and the second probe end 143. The second limiting holes on the second limiting plate 160 are disposed corresponding to the positions of the first probe 121 and the second probe 141, and the first probe 121 and the second probe 141 can pass through the second limiting holes. Therefore, the positions of the first probe end 122 and the second probe end 143 can be fixed by using the second limiting holes, achieving precise limiting, which is beneficial to the stable connection with the unit to be tested.

[0057] Combined Figure 1 , when a plurality of support structures 130 can be disposed around the MEMS probe structure 120, a corresponding groove platform 131 can be disposed on a side of the side wall of the higher side of the support structure 130 away from the test circuit board 110. The bottom of the groove platform 131 is disposed on a side close to the test circuit board 110, and a part of the second limiting plate 160 can be in contact with the bottom of the groove platform 131. The groove platform 131 can be used as a support platform for supporting the second limiting plate 160. By designing the distance between the relative groove platforms 131 to match the size of the second limiting plate 160, the groove platform 131 on the support structure 130 can also play a role in limiting the position of the second limiting plate 160, thereby further improving the limiting accuracy of the corresponding positions of the first probe end 122 and the second probe end 143.

[0058] Similarly, a corresponding groove platform 131 can also be disposed on a side of the side wall of the higher side of the support structure 130 close to the test circuit board 110. The bottom of the groove platform 131 is disposed on a side away from the test circuit board 110, and a part of the first limiting plate 150 can be in contact with the bottom of the groove platform 131. The groove platform 131 is used as a support platform for supporting the first limiting plate 150. By designing the distance between the relative groove platforms 131 to match the size of the first limiting plate 150, the groove platform 131 on the support structure 130 can also play a role in limiting the position of the first limiting plate 150, thereby further improving the limiting accuracy of the position of the first probe 121.

[0059] Combined Figure 1 and Figure 2, To improve the structural stability of the test circuit board 110, a fixing plate 170 can be provided on the test circuit board 110. Through holes are reserved on the fixing plate 170, and the MEMS probe structure 120 is arranged in the through holes. For example, the multi-layer organic substrate 123 is located in the through hole and has a circuit connection with the test circuit board 110. The support structure 130 is arranged on the fixing plate 170 and is located on one side of the MEMS probe structure 120. When multiple support structures 130 are provided, there is an accommodation space between the sides of the support structures 130 with higher side walls. Structures such as the first probe 121, the first limiting plate 150, and the second limiting plate 160 can be arranged. After the lead frame structure 140, the insulating film, etc. are installed, a protective cover structure 180 can be provided to cover the structures already carried on the fixing plate 170, thereby playing a role in protecting the lead frame structure 140 and the insulating film 190 of the lead frame structure 140.

[0060] See Figure 2 , The lead frame structure 140 further includes an insulating film 190, and the insulating film 190 covers at least the conductive traces 142. Specifically, the insulating film 190 can play a role in insulation and protecting the conductive traces 142 in the lead frame structure 140. The insulating film 190 covers the conductive traces 142. For example, by laying the insulating film 190 on an inclined surface, the conductive traces 142 can be tightly compacted, improving the protection of the conductive traces 142.

[0061] Combining the above embodiments, the embodiments of the present invention further provide a lead frame structure made by MEMS technology. Figure 7 For the structural schematic diagram of the lead frame structure provided by the embodiment of the present invention, see Figure 7 , The lead frame structure 140 includes:

[0062] Substrate 710;

[0063] The first conductive layer 720, located on one side of the substrate 710;

[0064] The insulating layer 730, located on the side of the first conductive layer 720 away from the substrate 710. The insulating layer 730 includes a via 731, and the via 731 exposes at least a part of the first conductive layer 720;

[0065] The second conductive layer 740, located on the side of the insulating layer 730 away from the substrate 710; wherein, the second conductive layer 740 includes a plurality of conductive traces 142, and at least one conductive trace 142 is connected to the first conductive layer 720 through the via 731; wherein, the conductive traces 142 extend along a first direction, and the first direction intersects with the direction from the substrate 710 to the first conductive layer 720;

[0066] A conductive structure 750, corresponding to the conductive trace 142, is disposed on a side of the conductive trace 142 away from the substrate 710. The conductive structure 750 serves as the second probe 141.

[0067] Specifically, the substrate 710 can be a silicon wafer, a ceramic, or other forms of substrate 710. The first conductive layer 720 is disposed on the substrate 710. Among them, the first conductive layer 720 can be a composite material layer. For example, in the process, a copper layer seed layer can be formed first through PVD sputtering process, and then an electroplated PC material and a copper layer can be disposed at a preset position by using photolithography process. The use of PC material can improve the strength of the first conductive layer 720 and avoid causing broken wires to affect the signal transmission of the first conductive layer 720. A schematic diagram of an intermediate structure in the preparation process of the lead frame structure is as Figure 8 shown. The insulating layer 730 is disposed on a side of the first conductive layer 720 away from the substrate 710. Exemplarily, the insulating layer 730 can adopt polyimide (PI). Via holes 731 can be formed on the insulating layer 730 by using dry etching process. The via holes 731 can expose a part of the first conductive layer 720, so that the upper second conductive layer 740 can be electrically connected to the first conductive layer 720 through the via holes 731. A schematic diagram of an intermediate structure in the preparation process of the lead frame structure is as Figure 9 shown. The second conductive layer 740 is disposed on a side of the insulating layer 730 away from the substrate 710. The second conductive layer 740 includes an etching pattern. Multiple conductive traces 142 can be formed on the second conductive layer 740 according to the designed etching pattern. Among them, the second conductive layer 740 can be a composite conductive material layer. For example, on a side of the insulating layer 730 away from the substrate 710, a copper layer seed layer can be formed first through PVD sputtering process, a photolithographic pattern can be formed at a preset position after coating photoresist by using photolithography process, and then a copper layer and a gold layer are electroplated. After removing the glue and the photoresist, multiple conductive traces 142 can be obtained. A schematic diagram of an intermediate structure in the preparation process of the lead frame structure is as Figure 9 shown. Exemplarily, in combination with Figure 2 , referring to Figure 7 and Figure 9 , the second conductive layer 740 includes three conductive traces 142. In other embodiments, the number of conductive traces 142 can be set according to the number of the second probes 141, and no specific limitation is made here. A conductive structure 750 can be disposed corresponding to the conductive trace 142. Among them, the conductive structure 750 can be a columnar structure. The conductive structure 750 can serve as the second probe 141 to provide the second probe end 143 and be connected to the conductive trace 142. Exemplarily, the conductive structure 750 can form a photolithographic pattern corresponding to the conductive trace 142 by using photolithography process, and then electroplate PC material. After removing the glue, a columnar conductive structure 750 can be obtained.

[0068] Optionally, the lead frame structure 140 further includes a filling layer 732 located within the via 731. The filling layer 732 is used for electrically connecting the conductive trace 142 and the first conductive layer 720. Specifically, the filling layer 732 can be a copper layer. By providing the filling layer 732 within the via 731, the occurrence of voids in the via 731 is avoided, which may otherwise affect the stability of the electrical connection between the conductive trace 142 and the first conductive layer 720.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements for some of the technical features. However, such modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A super-high-speed probe card, characterized in that, include: Test circuit boards; A micro-electromechanical system probe structure, wherein the micro-electromechanical system probe structure comprises a plurality of first probes, one end of each of the first probes being electrically connected to the test circuit board; The other end of the first probe serves as a first probe end; A support structure is located on one side of the MEMS probe structure, and a surface of the support structure away from the test circuit board is an inclined surface; the inclined surface extends in a direction away from the MEMS probe structure, and an angle is formed between the inclined surface and the surface of the test circuit board; the angle is less than 60°; A lead frame structure includes a plurality of second probes and conductive traces corresponding to the second probes; one end of the second probe is connected to one end of the conductive trace; the other end of the second probe serves as a second probe end; the first probe end is arranged adjacent to the second probe end; the other end of the conductive trace extends along the inclined surface of the support structure to the surface of the test circuit board and is electrically connected to the test circuit board.

2. The ultra-high speed probe card according to claim 1, characterized in that, The first probe is used to transmit ground signals, power signals and digital signals less than 16Gpbs; the second probe is used to transmit ground signals, power signals, analog signals greater than 16GHz and digital signals greater than 32Gbps.

3. The ultra-high speed probe card according to claim 2, wherein, The lead frame structure further includes a filter device, and the filter device is connected between at least one pair of the conductive traces.

4. The ultra-high speed probe card according to claim 1, characterized in that, The MEMS probe structure further includes a multi-layer organic substrate, which is disposed between one end of the first probe and the test circuit board and is used to provide a switching circuit to electrically connect the first probe to the test circuit board.

5. The ultra-high speed probe card according to claim 1, wherein The ultra-high-speed probe card further includes: a first limiting plate and a second limiting plate; The first limiting plate is disposed between the first probe and the test circuit board, the first limiting plate comprises a first limiting hole, the first limiting hole corresponds to one end of the first probe, the first probe at least partially passes through the first limiting hole, and then is electrically connected to the test circuit board; The second limiting plate is disposed on one side of the first probe end, and the second limiting plate includes a second limiting hole corresponding to the first probe end and the second probe end, and the first probe end and the second probe end at least partially pass through the second limiting hole.

6. The ultra-high speed probe card according to any one of claims 1-5, characterized in that, The lead frame structure further includes an insulating film, and the insulating film at least covers the conductive traces.

7. The ultra-high speed probe card according to claim 1, wherein The second probe ends and the first probe ends are arranged in a regular pattern.

8. The ultra-high speed probe card according to claim 1, wherein The lead frame structure comprises: substrate; A first conductive layer, located on one side of the substrate; an insulating layer, located on a side of the first conductive layer away from the substrate, the insulating layer comprising a via hole, and the via hole at least exposes a portion of the first conductive layer; A second conductive layer is located on a side of the insulating layer away from the substrate; wherein the second conductive layer includes a plurality of conductive traces, at least one of which is connected to the first conductive layer through the via; wherein the conductive trace extends along a first direction, and the first direction intersects with a direction from the substrate to the first conductive layer; A conductive structure, corresponding to the conductive trace, is disposed on a side of the conductive trace away from the substrate, and the conductive structure serves as the second probe.

9. The ultra-high-speed probe card according to claim 8, wherein The material of the insulating layer includes polyimide.

10. The ultra-high speed probe card according to claim 8, characterized in that, The lead frame structure further includes: a filling layer, which is located in the via hole, and the filling layer is used for electrically connecting the conductive trace and the first conductive layer.

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