Electrostatic chuck structure for semiconductor processing

Abstract

The invention provides an electrostatic chuck structure for semiconductor processing, which comprises a base, an adsorption electrode layer and a ceramic dielectric layer, and is characterized in that the adsorption electrode layer is arranged between the base and the ceramic dielectric layer; the check ring is fixedly mounted on the top edge of the ceramic dielectric layer; the air chamber is arranged in the ceramic dielectric layer, a plurality of air outlet holes are formed in the top of the air chamber in a communicating mode, the air outlet holes are evenly distributed in the top face of the ceramic dielectric layer, the air outlet holes are each connected with a boss in a matched mode, the bosses extend to the position above the ceramic dielectric layer, and the bosses are used for bearing a wafer; and the lifting mechanism is connected with the boss. Through the air chamber and the plurality of uniformly distributed air outlet holes arranged on the ceramic dielectric layer, after the wafer is subjected to electrostatic adsorption, air for heat dissipation and cooling is introduced into the air chamber through the air inlet pipe, the air is shunted to the plurality of air outlet holes from the air chamber, and blowing is directly provided for the bottom surface of the wafer through the air outlet holes, so that the heat dissipation effect is guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of electrostatic chucks, and particularly to an electrostatic chuck structure for semiconductor processing. Background Art

[0002] An electrostatic chuck is a fixture that uses the principle of electrostatic adsorption to fix the adsorbed object. It is used to adsorb ultra-clean wafers (such as wafers) and keep the adsorbed object in good flatness, thereby suppressing the deformation of the adsorbed object during the process; due to its unique advantages, it has become the most widely used wafer clamping tool in semiconductor manufacturing processes and is the core component of equipment such as etching, thin film deposition, and ion implantation.

[0003] The electrostatic chuck is crucial in semiconductor processes and has advantages such as uniform adsorption force, low pollution, and can be used in a vacuum environment.

[0004] The key and difficulty of the electrostatic chuck is temperature control; taking dry etching as an example, it is necessary to control the wafer at a specific temperature between 100°C and -70°C to maintain a certain etching characteristic. And its temperature control mainly relies on the following two ways: 1) increasing the gas convection between the wafer surface and the electrostatic chuck surface to dissipate heat (usually the cooling gas used in semiconductor processes is helium); 2) dissipating heat through the heat conduction of the electrostatic chuck surface.

[0005] Currently, for the heat dissipation and cooling of traditional electrostatic chucks, as in the existing patent document "CN218498043U An Electrostatic Adsorption Disk", air guide holes are provided inside the base, and supply air holes are provided at the lower ends of the air guide holes; the air guide holes facilitate rapid cooling. When the above-mentioned existing technology cools down, by setting air channels, the gas circulates inside the air channels, and the gas cannot directly contact the wafer, resulting in the problem that the gas used for cooling cannot directly transfer heat to the wafer, and the heat dissipation and cooling effect is not good. Summary of the Invention

[0006] The present invention provides an electrostatic chuck structure for semiconductor processing to solve the technical problem that the heat dissipation gas cannot directly contact the wafer, resulting in poor heat dissipation effect.

[0007] The present invention solves the above technical problems through the following technical solutions: The present invention provides an electrostatic chuck structure for semiconductor processing, including a base, an adsorption electrode layer, and a ceramic dielectric layer. The adsorption electrode layer is disposed between the base and the ceramic dielectric layer. It further includes: a retaining ring fixedly installed on the top edge of the ceramic dielectric layer; an air chamber disposed inside the ceramic dielectric layer. A plurality of air outlet holes are communicated with the top of the air chamber, and the plurality of air outlet holes are evenly distributed on the top surface of the ceramic dielectric layer. Each of the plurality of air outlet holes is connected with a boss in cooperation, and the boss extends above the ceramic dielectric layer. The boss is used for carrying a wafer; a lifting mechanism connected to the boss, and the lifting mechanism switches between two states where the top end of the boss is flush with the top surface of the retaining ring or higher than the top surface of the retaining ring; an air inlet pipe communicated with the air chamber; the lifting mechanism has a driving part disposed in the air inlet pipe, and the driving part provides driving force through the air pressure of the gas entering through the port of the air inlet pipe; an exhaust pipe, and one end of the exhaust pipe extends into the retaining ring.

[0008] In this technical solution, after the wafer is electrostatically adsorbed and during the processing, the air inlet pipe intakes air, and a gas for heat dissipation and cooling is introduced into the air chamber. The gas is discharged through a plurality of air outlet holes, and the air outlet holes directly blow air to the bottom surface of the wafer, thereby ensuring the heat dissipation effect.

[0009] Preferably, the boss is of a frustum shape, and the diameter of the boss gradually decreases from top to bottom.

[0010] In this technical solution, through the design of the frustum shape of the boss and the diameter of the boss gradually decreasing from top to bottom, when the boss is in the high position state, the boss plugs the air outlet holes. When the boss is in the low position state, there is a gap between the wall of the air outlet hole and the boss, realizing the opening of the air outlet holes for blowing air.

[0011] Preferably, a carrier plate is fixedly connected to the bottom of the boss. The carrier plate is a mesh plate. A plurality of positioning columns are fixedly connected to the bottom surface of the carrier plate. A positioning sleeve is fixedly connected to the bottom surface of the air chamber. The inner ring of the positioning sleeve is connected with the positioning columns in cooperation, and both the positioning columns and the positioning sleeve are vertically arranged; a heat conducting block is fixedly connected to the bottom surface of the carrier plate.

[0012] In this technical solution, the carrier plate connects all the bosses into one body. By driving the carrier plate through the lifting mechanism, all the bosses can be synchronously driven to move together. Among them, through the design of the positioning columns and the positioning sleeve, it provides a guiding function for the up and down movement of the carrier plate.

[0013] Preferably, the lifting mechanism includes a connecting rod, a lower movable block, and an upper movable block; the lower movable block is connected to the driving part of the lifting mechanism, the upper movable block is fixedly connected to one end of the connecting rod, and the other end of the connecting rod is fixedly connected to one side edge of the carrier plate; a first inclined surface is provided on one side of the top of the lower movable block, and a second inclined surface is provided on the bottom of the upper movable block, and the first inclined surface and the second inclined surface are in contact with each other.

[0014] In this technical solution, the lifting mechanism is used to drive the convex platform to move up and down.

[0015] Preferably, the driving part includes a side rod, a connecting frame, a sealing disc, a retaining ring, and a gasket; the outer ring of the retaining ring is fixedly connected to the inner pipe wall of the intake pipe, a sealing disc elastically connected to the intake pipe is provided on one side of the retaining ring, and a gasket is fixedly connected to the disc surface of the sealing disc. The sealing disc, the gasket, and the retaining ring are coaxially arranged, and the diameter of the gasket is larger than the inner diameter of the retaining ring. The sealing disc is fixedly connected to the connecting frame, the connecting frame is fixedly connected to one end of the side rod, and the other end of the side rod is fixedly connected to the lower movable block; a reinforcing plate is fixedly installed between the connecting frame and the side wall of the sealing disc.

[0016] In this technical solution, the driving part provides driving for the lifting mechanism, and the design of providing driving force through the air pressure at the port of the intake pipe enables the driving of the lifting mechanism without the need to additionally set a power source; after the wafer is placed on the convex platform, gas is introduced to make the convex platform descend; after processing, the gas supply is stopped and the convex platform ascends to realize the automatic opening and closing of the air outlet holes.

[0017] Preferably, a guide hole seat is fixedly connected to the inner pipe wall of the intake pipe, a hole body is opened on the guide hole seat, the hole body is connected with a guide rod in a matching manner, one end of the guide rod is fixedly connected to the side wall of the sealing disc, a spring is sleeved on the guide rod, one end of the spring is fixedly connected to the sealing disc, and the other end of the spring is fixedly connected to the guide hole seat.

[0018] In this technical solution, through the arrangement of the spring, the guide rod, and the guide hole seat, the elastic installation of the sealing disc along the length direction of the intake pipe is realized.

[0019] Preferably, the connecting rod is provided with a U-shaped part; the bottom surface of the U-shaped part, the bottom surface of the positioning column, and the bottom surface of the heat conducting block are flush; when the top surface of the convex platform is flush with the top surface of the retaining ring, the bottom surface of the U-shaped part, the bottom surface of the positioning column, and the bottom surface of the heat conducting block are in contact with the bottom surface of the air chamber; a positioning stop surface is provided on one side of the U-shaped part close to the lower movable block.

[0020] In this technical solution, through the design that the bottom surface of the U-shaped part, the bottom surface of the positioning column, and the bottom surface of the heat conducting block are flush, during wafer processing, the bottom surface of the U-shaped part, the bottom surface of the positioning column, and the bottom surface of the heat conducting block are in contact with the bottom surface of the air chamber to facilitate heat conduction.

[0021] Preferably, a cavity is formed among the inner wall of the retaining ring, the top surface of the ceramic dielectric layer, and the bottom surface of the wafer. The cavity is communicated with the exhaust pipe. The top end of the air outlet hole is fixedly communicated with an air outlet cover. The diameter of the air outlet cover gradually decreases from top to bottom, and the top end opening of the air outlet cover is provided with a top edge parallel to the bottom surface of the wafer. A narrow channel is formed between the top edge and the bottom surface of the wafer.

[0022] In this technical solution, by forming a cavity, gas diffusion and discharge can be prevented, and the gas can be collected and recycled through the exhaust pipe, thus avoiding gas waste; and through the diversion of the air outlet cover and the narrow channel formed by the top edge and the bottom surface of the wafer, the uniformity of the air blowing on the bottom surface of the wafer is improved.

[0023] Preferably, a connecting pipe is connected to the port of the exhaust pipe, and a pump body is connected to the end of the connecting pipe away from the exhaust pipe.

[0024] In this technical solution, the gas discharged from the exhaust pipe is pumped by the pump body and transported to the recycling equipment for recycling.

[0025] Preferably, a heating electrode and a cooling water channel are arranged inside the base.

[0026] In this technical solution, the heating electrode and the cooling water channel provide the function of temperature control for the base.

[0027] On the basis of conforming to the common knowledge in the art, the above preferred conditions can be combined arbitrarily to obtain various preferred examples of the present invention.

[0028] The positive and progressive effects of the present invention are as follows: The above-mentioned electrostatic chuck structure for semiconductor processing, through the air chamber and a number of uniformly distributed air outlet holes provided on the ceramic dielectric layer, after the wafer is electrostatically adsorbed, a gas for heat dissipation and cooling is introduced into the air chamber through the air inlet pipe, and the gas is shunted from the air chamber to a number of air outlet holes, and the air outlet holes directly provide blowing to the bottom surface of the wafer, ensuring the heat dissipation effect; further, an air outlet cover is provided, and the air outlet cover provides a guiding function for the airflow blown from the air outlet holes to the bottom surface of the wafer, and the air outlet cover adopts a horn-shaped design with a gradually decreasing diameter from top to bottom, and the top end of the air outlet cover is designed as a top edge structure that extends outward and is parallel to the bottom surface of the wafer. A narrow channel is formed between the top edge and the bottom surface of the wafer, and the airflow blows from the top end of the air outlet cover to the bottom surface of the wafer, and can be guided along the narrow channel and diffused from the narrow channel to the bottom surface of the wafer, so that the area lacking blowing between adjacent air outlet covers on the wafer can be blown by the airflow, ensuring the uniformity of the heat dissipation blowing on the bottom surface of the wafer; furthermore, by providing a boss and a lifting mechanism for driving the boss to move up and down, the boss provides a bearing for wafer placement. During wafer processing, the boss is driven by the lifting mechanism to move downward, which can open the air outlet holes. When the wafer needs to be taken out and after it is taken out, the boss moves upward and resets to block the air inlet hole, ensuring the sealing of the air chamber in the non-processing state and preventing foreign objects from entering. The lifting mechanism has a driving part arranged in the air inlet pipe, and the driving part provides driving force through the air pressure of the gas entering through the port of the air inlet pipe, so that the lifting drive of the boss is powered by air pressure without the need to additionally set a power source; a retaining ring is also provided. After the wafer is adsorbed, a cavity is formed between the bottom surface of the wafer, the inner wall of the retaining ring and the top surface of the ceramic dielectric layer. At the same time, the cavity is connected to the exhaust pipe, so that the gas can only be discharged through the exhaust pipe, which is convenient for gas recovery and avoids direct diffusion to the outside, causing waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 FIG. is a schematic diagram of the overall external structure of the present invention.

[0030] Figure 2 FIG. is a schematic cross-sectional view of the overall structure of the present invention.

[0031] Figure 3 For the present invention Figure 2 FIG. is an enlarged schematic view of part A in the present invention.

[0032] Figure 4 FIG. is a schematic diagram of the installation structure of one side of the ceramic dielectric layer and the exhaust pipe of the present invention.

[0033] Figure 5 FIG. is a schematic diagram of the carrier plate and the lifting mechanism when the boss of the present invention is in the high position state.

[0034] Figure 6 For the present invention Figure 5 FIG. is an enlarged schematic view of part B in the present invention.

[0035] Figure 7 This is a schematic diagram of the carrier board and the lifting mechanism when the boss of the present invention is in the low position.

[0036] Figure 8 This is a schematic diagram of the carrier board and the structures on the carrier board of the present invention.

[0037] Figure 9 This is a schematic diagram of the connection structure between the exhaust pipe and the pump body of the present invention.

[0038] Description of the reference numerals in the drawings In the figure: 1, base; 101, heating electrode; 102, cooling water channel; 2, adsorption electrode layer; 3, ceramic dielectric layer; 4, retaining ring; 5, intake pipe; 6, exhaust pipe; 7, air outlet hood; 701, top edge; 8, boss; 9, carrier board; 901, positioning sleeve; 902, positioning post; 903, heat conducting block; 10, air chamber; 11, lifting mechanism; 1101, connecting rod; 11011, U-shaped part; 1102, lower movable block; 11021, first inclined surface; 1103, upper movable block; 11031, second inclined surface; 1104, side rod; 1105, connecting frame; 1106, sealing disc; 1107, retaining ring; 1108, reinforcing plate; 1109, gasket; 1110, guide hole seat; 1111, guide rod; 1112, spring; 12, air outlet hole; 13, cavity; 14, narrow channel; 15, pump body; 16, connecting pipe; a, wafer. Detailed implementation manners

[0039] The present invention will be further described below by way of examples, but the present invention is not limited thereto within the scope of the described examples.

[0040] As Figures 1-9As shown in the figure, an electrostatic chuck structure for semiconductor processing includes a base 1, an adsorption electrode layer 2, and a ceramic dielectric layer 3. The adsorption electrode layer 2 is disposed between the base 1 and the ceramic dielectric layer 3. It further includes: a retaining ring 4 fixedly installed on the top edge of the ceramic dielectric layer 3; an air chamber 10 disposed inside the ceramic dielectric layer 3. A plurality of air outlet holes 12 are communicated with the top of the air chamber 10. The plurality of air outlet holes 12 are evenly distributed on the top surface of the ceramic dielectric layer 3, and each of the plurality of air outlet holes 12 is cooperatively connected with a boss 8. The boss 8 extends above the ceramic dielectric layer 3, and the boss 8 is used to carry the wafer a; a lifting mechanism 11 connected to the boss 8, and the lifting mechanism 11 switches between two states where the top end of the boss 8 is flush with the top surface of the retaining ring 4 or higher than the top surface of the retaining ring 4; an air inlet pipe 5 communicated with the air chamber 10; the lifting mechanism 11 has a driving part disposed in the air inlet pipe 5, and the driving part provides driving force through the air pressure of the gas entering through the port of the air inlet pipe 5; an exhaust pipe 6, and one end of the exhaust pipe 6 extends into the retaining ring 4.

[0041] In specific implementation, the air chamber 10 can also be disposed inside the base 1, and the air outlet holes 12 can be set to penetrate through the adsorption electrode layer 2 and the ceramic dielectric layer 3.

[0042] As Figures 3-7 shown, as a specific technical solution, the boss 8 is a frustum-shaped structure, and the diameter of the boss 8 gradually decreases from top to bottom. Through the frustum-shaped design of the boss 8 and its diameter gradually decreasing from top to bottom, and the air outlet holes 12 cooperating with the boss 8 are also frustum-shaped. When the boss 8 is in the high position, that is, as Figure 5 shown, at this time the top end of the boss 8 is higher than the top surface of the retaining ring 4, and the boss 8 seals the air outlet holes 12, so that the air chamber 10 is closed; when the boss 8 moves down to the low position, that is, as Figure 7 shown, at this time the top end of the boss 8 is flush with the top surface of the retaining ring 4, and a gap is formed between the boss 8 and the wall of the air outlet hole 12, so that the air outlet hole 12 is opened, and the gas in the air chamber 10 can be discharged from the air outlet hole 12.

[0043] Through the design that the boss 8 can move up and down, before processing the wafer a, an external pick-and-place mechanism is used to place the wafer a on the boss 8, as Figure 5 shown, and then the boss 8 is moved down to as Figure 7 shown, to complete the opening of the air outlet holes 12, and provide blowing for cooling during the processing of the wafer a; after the processing of the wafer a, the boss 8 moves up and resets to as Figure 5As shown, the closing of the air outlet 12 is completed, and then the wafer a after processing is taken out by the loading and unloading mechanism. Through the above design of the boss 8, after processing, the boss 8 can move upward to push up the wafer a, creating a distance between the edge of the wafer a and the top surface of the retaining ring 4, facilitating the loading and unloading of the wafer a by the external loading and unloading mechanism. When no processing is carried out, the air outlet 12 is closed to prevent foreign objects from entering the air chamber 10, playing a protective role. For example, in case of accidental power failure, it can self-close to prevent foreign objects and dust from entering.

[0044] Among them, when the air outlet 12 provides blowing heat dissipation and cooling for the bottom surface of the wafer a, the intake pipe 5 is connected to an external gas supply device, and the gas for cooling enters the intake pipe 5. The cooling gas can be helium; the cooling gas enters the air chamber 10 through the intake pipe 5 and then is discharged through a plurality of air outlets 12 to provide blowing for the bottom surface of the wafer a.

[0045] Such as Figures 4-8 As shown, as a specific technical solution, a carrier plate 9 is fixedly connected to the bottom of the boss 8. The carrier plate 9 is a mesh plate. A plurality of positioning columns 902 are fixedly connected to the bottom surface of the carrier plate 9. A positioning sleeve 901 is fixedly connected to the bottom surface of the air chamber 10. The inner circle of the positioning sleeve 901 is connected in cooperation with the positioning column 902, and both the positioning column 902 and the positioning sleeve 901 are vertically arranged; a heat conducting block 903 is fixedly connected to the bottom surface of the carrier plate 9.

[0046] The carrier plate 9 connects all the bosses 8 into one body. By controlling the lifting movement of the carrier plate 9, all the bosses 8 can be lifted and lowered synchronously, thereby adjusting the height of all the bosses 8. Among them, during the lifting movement of the carrier plate 9, the positioning column 902 moves up and down with the carrier plate 9. The vertical positioning column 902 slides with the positioning sleeve 901 to provide a moving guiding function.

[0047] Among them, the carrier plate 9 is designed as a mesh plate; the mesh holes on it will not cause blockage and avoid blocking the gas flow.

[0048] Such as Figures 5-7As shown, as a specific technical solution, the lifting mechanism 11 includes a connecting rod 1101, a lower movable block 1102, and an upper movable block 1103; the lower movable block 1102 is connected to the driving part of the lifting mechanism 11, one end of the connecting rod 1101 is fixedly connected to the upper movable block 1103, and the other end of the connecting rod 1101 is fixedly connected to one side edge of the carrier plate 9; a first inclined surface 11021 is provided on one side of the top of the lower movable block 1102, a second inclined surface 11031 is provided on the bottom of the upper movable block 1103, and the first inclined surface 11021 and the second inclined surface 11031 are in contact with each other. The driving part includes a side rod 1104, a connecting frame 1105, a sealing disc 1106, a retaining ring 1107, and a gasket 1109; the outer ring of the retaining ring 1107 is fixedly connected to the inner pipe wall of the air inlet pipe 5, a sealing disc 1106 elastically connected to the air inlet pipe 5 is provided on one side of the retaining ring 1107, and a gasket 1109 is fixedly connected to the disc surface of the sealing disc 1106. The sealing disc 1106, the gasket 1109, and the retaining ring 1107 are coaxially arranged, and the diameter of the gasket 1109 is larger than the inner diameter of the retaining ring 1107. The sealing disc 1106 is fixedly connected to a connecting frame 1105, the connecting frame 1105 is fixedly connected to one end of the side rod 1104, and the other end of the side rod 1104 is fixedly connected to the lower movable block 1102; a reinforcing plate 1108 is fixedly installed between the connecting frame 1105 and the side wall of the sealing disc 1106. A guide hole seat 1110 is fixedly connected to the inner pipe wall of the air inlet pipe 5, a hole body is provided on the guide hole seat 1110, the hole body is connected with a guide rod 1111 in a matching manner, one end of the guide rod 1111 is fixedly connected to the side wall of the sealing disc 1106, a spring 1112 is sleeved on the guide rod 1111, one end of the spring 1112 is fixedly connected to the sealing disc 1106, and the other end of the spring 1112 is fixedly connected to the guide hole seat 1110.

[0049] The specific operation of the lifting mechanism 11 is as follows. During the process of introducing the cooling gas into the air inlet pipe 5, the air pressure acts on the sealing disc 1106 and the gasket 1109. Through the action of the air pressure, the sealing disc 1106 moves, specifically from Figure 5 to Figure 7 as shown in the figure. During the movement of the sealing disc 1106, the guide rod 1111 and the connecting frame 1105 on the sealing disc 1106 move together. The guide rod 1111 slides relative to the hole body on the guide hole seat 1110 to provide a guiding function, and at the same time, the spring 1112 is compressed. The connecting frame 1105 drives the lower movable block 1102 to move together through the side rod 1104. Through Figure 5 and Figure 7The design where the first inclined plane 11021 and the second inclined plane 11031 shown are always in contact. After the lower moving block moves, the upper moving block, the connecting rod 1101, the carrier plate 9, and the boss 8 move downward together under the action of gravity; it is realized that the boss 8 moves downward driven by the air pressure of the cooling gas, and then the air outlet 12 is automatically opened to blow air.

[0050] After the cooling gas stops flowing into the air inlet pipe 5, the sealing disc 1106 loses the air pressure, and the elastic force of the compression spring 1112 provides a restoring force for the sealing disc 1106 to reset the sealing disc 1106. The gasket 1109 on the sealing disc 1106 covers the retaining ring 1107 again to close the air inlet pipe 5; when the sealing disc 1106 moves for resetting, the lower moving block is driven to reset through the connecting frame 1105 and the side rod 1104, and the lower moving block pushes the upper moving block to move for resetting, so that it changes from Figure 7 to as Figure 5 shown in the state. The upper moving block moves for resetting, and drives the carrier plate 9 and the boss 8 to move upward together through the connecting rod 1101, so that the boss 8 blocks the air outlet 12 again.

[0051] As Figure 7 shown, a cavity 13 is formed between the inner wall of the retaining ring 4, the top surface of the ceramic dielectric layer 3, and the bottom surface of the wafer a. The cavity 13 is communicated with the exhaust pipe 6. The top end of the air outlet 12 is fixedly communicated with an air outlet cover 7. The diameter of the air outlet cover 7 gradually decreases from top to bottom, and a top edge 701 parallel to the bottom surface of the wafer a is provided at the top port of the air outlet cover 7. A narrow channel 14 is formed between the top edge 701 and the bottom surface of the wafer a.

[0052] When the wafer a is placed on the boss 8 and the boss 8 moves downward to the low position, the top end of the boss 8 is flush with the top surface of the retaining ring 4, and the bottom surface of the wafer a is carried by the top end of the boss 8 and the top surface of the retaining ring 4. Then, an electric field of electrostatic force is generated by the adsorption electrode layer 2 to adsorb the wafer a. A cavity 13 is formed between the inner wall of the retaining ring 4, the top surface of the ceramic dielectric layer 3, and the bottom surface of the wafer a. The cooling gas blown out from the air outlet 12 enters the cavity 13 to avoid diffusion to the outside, and the gas is only discharged outward through the exhaust pipe 6.

[0053] Among them, through the design of the air outlet cover 7, it provides a diversion for the gas discharged from the air outlet 12. Among them, a narrow channel 14 is formed between the top edge 701 on the air outlet cover 7 and the bottom surface of the wafer a, so that the gas blown to the bottom surface of the wafer a flows along the narrow channel 14 and diffuses along the bottom surface of the wafer a, so that the position where there is a lack of blowing between adjacent air outlet covers 7 of the wafer a can be blown by the air flow, ensuring the uniformity of the cooling air blowing on the bottom surface of the wafer a.

[0054] As Figure 9As shown, as a specific technical solution, a connecting pipe 16 is connected to the port of the exhaust pipe 6, and one end of the connecting pipe 16 away from the exhaust pipe 6 is connected to a pump body 15. Gas enters the cavity 13 and is discharged through the exhaust pipe 6. The pump body 15 extracts the gas. After the gas passes through the exhaust pipe 6, the connecting pipe 16, and the pump body 15 in sequence, it is transported to the recovery container device for gas recovery, avoiding direct diffusion to the outside and causing waste.

[0055] As Figure 2 shown, as a specific technical solution, a heating electrode 101 and a cooling water channel 102 are arranged inside the base 1.

[0056] The heating electrode 101 and the cooling water channel 102 provide a temperature control structure and control the temperature for the entire electrostatic chuck structure.

[0057] As Figure 7 shown, the connecting rod 1101 is provided with a U-shaped part 11011; the bottom surface of the U-shaped part 11011, the bottom surface of the positioning column 902, and the bottom surface of the heat conducting block 903 are flush; when the top end of the convex platform 8 is flush with the top surface of the retaining ring 4, the bottom surface of the U-shaped part 11011, the bottom surface of the positioning column 902, and the bottom surface of the heat conducting block 903 are in contact with the bottom surface of the air chamber 10; an in-place stop surface is arranged on one side of the U-shaped part 11011 close to the lower movable block 1102.

[0058] Among them, after the convex platform 8 moves down to the low position, the bottom surface of the U-shaped part 11011, the bottom surface of the positioning column 902, and the bottom surface of the heat conducting block 903 are in contact with the bottom surface of the air chamber 10, providing direct contact and facilitating heat transfer of the temperature control structure. Through the temperature control of the heating electrode 101 and the cooling water channel 102, and the blowing provided by the cooling gas, the temperature of the wafer a is reduced.

[0059] Among them, the design of the U-shaped part 11011 of the connecting rod 1101 is as Figure 7 shown. One side of the U-shaped part 11011 close to the lower movable block 1102 is an in-place stop surface. When the lower movable block moves to the state as Figure 7 shown, the in-place stop surface provides in-place blocking for the lower movable block.

[0060] The present invention is not limited to the above embodiments. No matter what changes are made in its shape or structure, they all fall within the protection scope of the present invention. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principle and essence of the present invention, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. An electrostatic chuck structure for semiconductor processing, comprising a base (1), an adsorption electrode layer (2) and a ceramic dielectric layer (3), wherein the adsorption electrode layer (2) is arranged between the base (1) and the ceramic dielectric layer (3); characterized in that: Also includes: A retaining ring (4), the retaining ring (4) being fixedly mounted on the top edge of the ceramic dielectric layer (3); An air chamber (10), the air chamber (10) being arranged inside the ceramic dielectric layer (3), the top of the air chamber (10) being connected to a plurality of air outlet holes (12), the plurality of air outlet holes (12) being evenly distributed on the top surface of the ceramic dielectric layer (3), and the plurality of air outlet holes (12) being cooperatively connected to a boss (8), and the boss (8) extending to the top of the ceramic dielectric layer (3), the boss (8) being used to carry a wafer (a); A lifting mechanism (11), the lifting mechanism (11) being connected to the boss (8), the lifting mechanism (11) switching between two states where the top of the boss (8) is flush with the top surface of the retaining ring (4) or higher than the top surface of the retaining ring (4); an air intake pipe (5), the air intake pipe (5) being in communication with the air chamber (10); the lifting mechanism (11) comprising a driving unit arranged in the air intake pipe (5), the driving unit providing driving force through the air pressure of the gas entering the port of the air intake pipe (5); An exhaust pipe (6), wherein one end of the exhaust pipe (6) extends into the retaining ring (4).

2. The electrostatic chuck structure for semiconductor processing according to claim 1, characterized in that: The boss (8) is a truncated cone-shaped structure, and the diameter of the boss (8) gradually decreases from top to bottom.

3. The electrostatic chuck structure for semiconductor processing according to claim 1, characterized in that: A carrier plate (9) is fixedly connected to the bottom of the boss (8), the carrier plate (9) is a mesh plate, a plurality of positioning columns (902) are fixedly connected to the bottom surface of the carrier plate (9), a positioning sleeve (901) is fixedly connected to the bottom surface of the air chamber (10), the inner ring of the positioning sleeve (901) is cooperatively connected to the positioning columns (902), and the positioning columns (902) and the positioning sleeve (901) are both vertically arranged; a heat conduction block (903) is fixedly connected to the bottom surface of the carrier plate (9).

4. The electrostatic chuck structure for semiconductor processing according to claim 3, characterized in that: The lifting mechanism (11) comprises a connecting rod (1101), a lower movable block (1102) and an upper movable block (1103); the lower movable block (1102) is connected to a driving portion of the lifting mechanism (11), the upper movable block (1103) is fixedly connected to one end of the connecting rod (1101), and the other end of the connecting rod (1101) is fixedly connected to one side of a carrier plate (9); a first inclined surface (11021) is provided on one side of the top of the lower movable block (1102), a second inclined surface (11031) is provided on the bottom of the upper movable block (1103), and the first inclined surface (11021) and the second inclined surface (11031) are in contact with each other.

5. The electrostatic chuck structure for semiconductor processing according to claim 4, characterized in that: The driving part comprises a side rod (1104), a connecting frame (1105), a sealing disk (1106), a retaining ring (1107) and a gasket (1109); the outer ring of the retaining ring (1107) is fixedly connected to the inner tube wall of the air intake pipe (5); a sealing disk (1106) elastically connected to the air intake pipe (5) is provided on one side of the retaining ring (1107); and a gasket (1109) is fixedly connected to the disk surface of the sealing disk (1106); the sealing disk (1106), the gasket (1109) and the gasket (1109) are fixedly connected to the inner tube wall of the air intake pipe (5); ) and a retaining ring (1107) are coaxially arranged, and the diameter of the gasket (1109) is larger than the inner diameter of the retaining ring (1107); the sealing disk (1106) is fixedly connected with a connecting frame (1105), the connecting frame (1105) is fixedly connected to one end of the side rod (1104), and the other end of the side rod (1104) is fixedly connected to the lower movable block (1102); a reinforcing plate (1108) is fixedly installed between the connecting frame (1105) and the side wall of the sealing disk (1106).

6. The electrostatic chuck structure for semiconductor processing according to claim 5, characterized in that: A guide hole seat (1110) is fixedly connected to the inner tube wall of the air intake pipe (5), a hole body is opened on the guide hole seat (1110), and a guide rod (1111) is connected to the hole body in cooperation with the guide rod (1111), one end of the guide rod (1111) is fixedly connected to the side wall of the closing disk (1106), a spring (1112) is sleeved on the guide rod (1111), one end of the spring (1112) is fixedly connected to the closing disk (1106), and the other end of the spring (1112) is fixedly connected to the guide hole seat (1110).

7. The electrostatic chuck structure for semiconductor processing according to claim 4, characterized in that: The connecting rod (1101) is provided with a U-shaped portion (11011); the bottom surface of the U-shaped portion (11011), the bottom surface of the positioning column (902) and the bottom surface of the heat conductive block (903) are flush; when the top of the boss (8) is flush with the top surface of the retaining ring (4), the bottom surface of the U-shaped portion (11011), the bottom surface of the positioning column (902) and the bottom surface of the heat conductive block (903) are in contact with the bottom surface of the air chamber (10); and a stop surface is provided on one side of the U-shaped portion (11011) close to the lower movable block (1102).

8. The electrostatic chuck structure for semiconductor processing according to claim 1, characterized in that: A cavity (13) is formed between the inner wall of the retaining ring (4), the top surface of the ceramic dielectric layer (3) and the bottom surface of the wafer (a); the cavity (13) is connected to the exhaust pipe (6); the top end of the air outlet (12) is fixedly connected to an air outlet hood (7); the caliber of the air outlet hood (7) gradually decreases from top to bottom; and the top end of the air outlet hood (7) is provided with a top edge (701) that is flush with the bottom surface of the wafer (a); a narrow channel (14) is formed between the top edge (701) and the bottom surface of the wafer (a).

9. The electrostatic chuck structure for semiconductor processing according to claim 1, characterized in that: The port of the exhaust pipe (6) is connected to a connecting pipe (16), and one end of the connecting pipe (16) away from the exhaust pipe (6) is connected to a pump body (15).

10. The electrostatic chuck structure for semiconductor processing according to claim 1, characterized in that: A heating electrode (101) and a cooling water channel (102) are arranged inside the base (1).

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