A miniaturized multilayer ultra-wideband millimeter wave frequency selective surface

By designing a multi-layer metal patch, the filtering performance and angular stability of the frequency selective surface are optimized, solving the problem of insufficient transition bandwidth and angular stability of the frequency selective surface in the prior art, and realizing efficient frequency selection and miniaturization of the millimeter wave band.

CN120089948BActive Publication Date: 2026-02-27TALANT LASER TECH (WUHAN) CO LTD
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Patent Information

Application Number
CN202510240193.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-03-03
Publication Date
2026-02-27
Estimated Expiration
2045-03-03

AI Technical Summary

Technical Problem

The frequency selection surface of the existing technology has a wide frequency range corresponding to the transition band on both sides of the passband, but poor angular stability, making it difficult to meet the requirements of miniaturization and high integration.

Method used

A miniaturized multilayer ultrawideband millimeter-wave frequency selective surface was designed. By using different geometries and arrangements of multilayer metal patches, combined with the interlayer coupling effect of concave portions, sub-patterns and annular patches, the filtering performance and angular stability of the frequency selective surface were optimized.

Benefits of technology

It achieves efficient frequency selection in the millimeter-wave band, covers a wider frequency range, reduces insertion loss, is suitable for miniaturized devices, and improves the angular stability and filtering performance of the frequency selection surface.

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Abstract

The application discloses a miniaturized multilayer ultra-wideband millimeter wave frequency selective surface, relates to the technical field of frequency selective surfaces, and comprises a first metal patch layer, a first dielectric layer, a second metal patch layer, a second dielectric layer, a third metal patch layer and a third dielectric layer which are sequentially stacked, the first metal patch layer is provided with a plurality of inner recesses, each inner recess is arranged on each side of the first metal patch layer, the second metal patch layer comprises a first sub-patch and a second sub-patch, the centers of the first sub-patch and the second sub-patch are coincident, and the third metal patch layer comprises a plurality of third sub-patches which are arranged in a ring shape at equal intervals. The application is helpful to improve the angle stability of the frequency selective surface.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of frequency selective surface, and in particular to a miniaturized multilayer ultra-wideband millimeter wave frequency selective surface. BACKGROUND

[0002] Frequency selective surface (FSS) is a periodic transmission surface with selectivity to electromagnetic waves, which can be used as a spatial filter. It has unique transmission, reflection and absorption characteristics for electromagnetic waves of selected frequency, and has no special effect on electromagnetic waves outside the selected frequency. It is composed of dielectric layer and metal layer, and the metal layer is composed of periodic structure of metal sheet or conductive material. Frequency selective surface is widely used in antenna manufacturing, radome design, filter, electromagnetic wave absorber and electromagnetic shielding device, which can greatly improve the transmission and shielding performance of communication devices.

[0003] A large-angle broadband frequency selective surface is disclosed in Chinese patent CN112290225B, which comprises a first dielectric substrate, a first metal structure array layer, a second dielectric substrate, a second metal structure array layer, a third dielectric substrate, a third metal structure array layer and a fourth dielectric substrate arranged in order from bottom to top. The first metal structure array layer, the second metal structure array layer and the third metal structure array layer are all arranged periodically by discrete metal patches. However, the frequency range corresponding to the transition band on both sides of the passband of the above-mentioned scheme is often wide, and its angle stability is poor. Therefore, it is necessary to provide a miniaturized multilayer ultra-wideband millimeter wave frequency selective surface to improve the angle stability of the frequency selective surface. SUMMARY

[0004] Therefore, the present application provides a miniaturized multilayer ultra-wideband millimeter wave frequency selective surface. The high-efficiency frequency selection of millimeter wave frequency band is realized through the design of multiple layers of metal patches. The different geometric shapes and arrangement modes of each layer of metal patches further optimize the filtering performance of the frequency selective surface and improve the angle stability of the frequency selective surface through interlayer coupling effect.

[0005] The present application provides a miniaturized multilayer ultra-wideband millimeter wave frequency selective surface, which comprises a first metal patch layer, a first dielectric layer, a second metal patch layer, a second dielectric layer, a third metal patch layer and a third dielectric layer arranged in order. The first metal patch layer has a plurality of recessed parts, each recessed part being arranged on each side edge of the first metal patch layer. The second metal patch layer comprises a first sub-patch and a second sub-patch, the centers of the first sub-patch and the second sub-patch being coincident. The third metal patch layer comprises a plurality of third sub-patches arranged in equal intervals in the form of a ring.

[0006] On the basis of the above technical scheme, preferably, the first metal patch layer has four equal-length side edges, the ratio of the width of the inner recess to the length of the side edge of the first metal patch layer is 1:12, the ratio of the length of the inner recess to the length of the side edge of the first metal patch layer is 1:4, and the ratio of the width of the inner recess to the length of the inner recess is 1:4.

[0007] On the basis of the above technical scheme, preferably, the first sub-patch is a metal square ring patch, the second sub-patch is arranged in the first sub-patch and located at the center position of the first sub-patch, the second sub-patch is provided with a through hole, the through hole is located at the center position of the second sub-patch, and the cross-sectional shape of the through hole is a cross shape.

[0008] Further preferably, the ratio of the length of the second sub-patch to the length of the first sub-patch is 1:5, and the ratio of the horizontal axis length of the through hole to the length of the first sub-patch is 31:250.

[0009] Further preferably, a plurality of the third sub-patches are arranged along the central annular array of the third metal patch layer.

[0010] Further preferably, the third sub-patch includes a metal circular ring patch and a cross-shaped patch, and the center of the circular ring metal patch coincides with the center of the cross-shaped patch.

[0011] Further preferably, the ratio of the ring width of the metal circular ring patch to the diameter of the metal circular ring patch is 1:8, and the ratio of the horizontal axis length of the cross-shaped patch to the diameter of the metal circular ring patch is 17:40.

[0012] Further preferably, the thickness of the first metal patch layer, the second metal patch layer and the third metal patch layer is 0.3-0.5 μm.

[0013] Further preferably, the thickness of the first dielectric layer is 0.65-0.75 mm, the thickness of the second dielectric layer is 0.5-0.6 mm, and the thickness of the third dielectric layer is 0.45-0.55 mm.

[0014] Further preferably, the first dielectric layer, the second dielectric layer and the third dielectric layer are all float glass, and the relative dielectric constant of the first dielectric layer, the second dielectric layer and the third dielectric layer is 6-6.5.

[0015] The miniaturized multilayer ultra-wideband millimeter wave frequency selective surface provided by the application has the following beneficial effects relative to the prior art:

[0016] (1) The design of multi-layer metal patches achieves efficient frequency selection in the millimeter-wave band, covering a wider frequency range and meeting the needs of ultra-wideband communication. The concave design of the first metal patch layer enhances the resonance characteristics of electromagnetic waves. The center-overlapping design of the second sub-pattern optimizes electromagnetic coupling. The third layer of equally spaced annular patches further improves the accuracy of frequency selection. This multi-layer synergy effectively improves selectivity while reducing insertion loss and ensuring the efficiency of signal transmission. At the same time, the geometric design of the concave part, sub-pattern and annular patch makes the structure of each metal patch layer compact and the overall size reduced, which is suitable for miniaturized devices and highly integrated application scenarios. The different geometric shapes and arrangements of each layer of metal patches further optimize the filtering performance of the frequency selection surface and improve the angular stability of the frequency selection surface through inter-layer coupling.

[0017] (2) By arranging multiple third sub-patterns along the central ring array to form a periodic structure, the resonance characteristics of electromagnetic waves are enhanced. Furthermore, by aligning the centers of the metal ring patch and the cross-shaped patch, the transmission path of electromagnetic waves is further optimized through coupling, thereby improving the accuracy of the resonant frequency. Meanwhile, the ratio of the ring width to the diameter of the ring patch is 1:8, and the ratio of the horizontal axis length of the cross-shaped patch to the diameter of the ring is 17:40. This enables the third metal patch layer to precisely control the resonant frequency of electromagnetic waves, thereby achieving highly selective passband and stopband responses. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A schematic diagram of the structure of the miniaturized multilayer ultrawideband millimeter-wave frequency selective surface provided by the present invention;

[0020] Figure 2 A unit structure diagram of the first metal patch layer provided by the present invention;

[0021] Figure 3 This is a unit structure diagram of the second metal patch layer provided by the present invention;

[0022] Figure 4 This is a unit structure diagram of the third metal patch layer provided by the present invention;

[0023] Figure 5 Simulation results of the two response curves, S11 and S21, provided by this invention;

[0024] Figure 6 The simulation results of the insertion loss response curves under different incident angles in TE polarization provided by this invention are shown in the figure.

[0025] Figure 7 The simulation results of the insertion loss response curves under different incident angles in TM polarization provided by this invention are shown in the figure.

[0026] Explanation of reference numerals in the attached figures: 1. First metal patch layer; 2. First dielectric layer; 3. Second metal patch layer; 4. Second dielectric layer; 5. Third metal patch layer; 6. Third dielectric layer. Detailed Implementation

[0027] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0028] like Figure 1 As shown, the present invention provides a miniaturized multilayer ultra-wideband millimeter-wave frequency selective surface, comprising a first metal patch layer 1, a first dielectric layer 2, a second metal patch layer 3, a second dielectric layer 4, a third metal patch layer 5, and a third dielectric layer 6 stacked sequentially. The first metal patch layer 1 has a plurality of recesses, each recess being disposed on each side of the first metal patch layer 1. The first metal patch layer 1 has four sides of equal length. The ratio of the width of the recess to the length of the side of the first metal patch layer 1 is 1:12, the ratio of the length of the recess to the length of the side of the first metal patch layer 1 is 1:4, and the ratio of the width of the recess to the length of the recess is 1:4.

[0029] In this embodiment, the recessed design alters the equivalent circuit characteristics of the metal patch, increasing the distribution of capacitance and inductance, thereby enhancing the resonant characteristics of electromagnetic waves. This optimization helps improve the filtering performance of the frequency selective surface, especially its selectivity in the millimeter-wave band. The geometric proportions of the recess allow the first metal patch layer 1 to more precisely control the transmission and reflection characteristics of electromagnetic waves, achieving higher passband and stopband selectivity to meet the requirements of ultra-wideband frequency selection. Furthermore, the recessed design effectively reduces the equivalent size of the metal patch while maintaining good electromagnetic performance. This design allows for a smaller frequency selective surface unit size (e.g., 2.5 × 2.5 mm), making it suitable for miniaturized and highly integrated devices.

[0030] Further, the existence of the inner recess increases the structural complexity of the metal patch, broadens the frequency range of the passband and stopband, in combination with the design of other metal patch layers, a broadband response of -3dB passband (10.51-18.53GHz) and -10dB stopband (19.73-49.76GHz) can be achieved, and the symmetrical distribution design of the inner recess enables the first metal patch layer 1 to maintain stable electromagnetic response under different incident angles, enhancing the angle stability of the frequency selective surface. At the same time, the geometric design of the inner recess is simple and regular, which is convenient for implementation through mature manufacturing processes, reduces the production difficulty and cost, and at the same time ensures the repeatability and consistency of the structure.

[0031] The second metal patch layer 3 includes a first sub-patch and a second sub-patch, the centers of the first sub-patch and the second sub-patch coincide, the first sub-patch is a metal square ring patch, the second sub-patch is arranged in the first sub-patch and located at the center position of the first sub-patch, the second sub-patch is provided with a through hole, the through hole is located at the center position of the second sub-patch, and the cross-sectional shape of the through hole is cross-shaped. The ratio of the length of the second sub-patch to the length of the first sub-patch is 1:5, and the ratio of the horizontal axis length of the through hole to the length of the first sub-patch is 31:250.

[0032] In this embodiment, the double-sub-patch design of the second metal patch layer 3, i.e. the combination of square ring and center rectangular patch, forms a complex equivalent circuit model through interlayer coupling effect, i.e. parallel combination of inductance and capacitance, thereby enhancing the resonance characteristics of electromagnetic waves. The center cross-shaped through hole further increases the distribution path of electromagnetic waves, optimizes the transmission and reflection characteristics of electromagnetic waves, and improves the filtering performance of the frequency selective surface. The size of the second sub-patch and the size of the first sub-patch are optimized to accurately control the resonance frequency of electromagnetic waves, thereby achieving efficient selection of the millimeter wave band. The specific ratio of the horizontal axis length of the cross-shaped through hole to the length of the first sub-patch further refines the frequency selection control ability, and improves the selectivity of the passband and the stopband.

[0033] Further, the center cross-shaped via design of the second sub-patch increases the complexity of the structure, broadens the passband and stopband range of the frequency selective surface. Combined with the design of other layers, a broadband response of -3dB passband (10.51-18.53GHz) and -10dB stopband (19.73-49.76GHz) can be achieved. The second sub-patch is nested in the first sub-patch, and the size ratio is optimized, so that the layer structure is compact and efficient, the size of the overall frequency selective surface unit is reduced, meeting the needs of miniaturization and high integration. The design of the center cross-shaped via has symmetry, so that the second metal patch layer 3 can maintain consistent electromagnetic response under different polarization states, improving the polarization consistency of the frequency selective surface. The geometric design of the second metal patch layer 3 optimizes the distribution path of electromagnetic waves, so that the frequency selective surface can maintain stable transmission and reflection characteristics within the incident angle range of 0° to 60°. Although the design of the second metal patch layer 3 is complex, its geometric shape is regular, which is convenient for realization through mature plating process, reduces the manufacturing difficulty and cost, and at the same time ensures the repeatability and consistency of the structure.

[0034] The third metal patch layer 5 includes a plurality of third sub-patches arranged in an equidistant annular manner. The plurality of third sub-patches are arranged along a central annular array of the third metal patch layer 5. The third sub-patch includes a metal circular ring patch and a cross-shaped patch, and the center of the metal circular ring patch coincides with the center of the cross-shaped patch. The ratio of the ring width of the metal circular ring patch to the diameter of the metal circular ring patch is 1:8, and the ratio of the horizontal axis length of the cross-shaped patch to the diameter of the metal circular ring patch is 17:40.

[0035] In this embodiment, the plurality of third sub-patches are arranged along the central annular array to form a periodic structure, which enhances the resonance characteristics of electromagnetic waves, especially showing excellent frequency selection performance in the millimeter wave frequency band. The center coincidence design of the metal circular ring patch and the cross-shaped patch further optimizes the transmission path of electromagnetic waves through coupling effect, and improves the accuracy of the resonance frequency. The ratio of the ring width of the circular ring patch to the diameter is 1:8, and the ratio of the horizontal axis length of the cross-shaped patch to the diameter of the circular ring is 17:40, which enables the third metal patch layer 5 to accurately control the resonance frequency of electromagnetic waves, thereby realizing high-selective passband and stopband response.

[0036] The periodic arrangement of the plurality of equidistant annularly arranged sub-patches increases the complexity of the structure, broadens the passband and stopband range of the frequency selective surface, and meets the application requirements of ultra-wideband. The combination design of the metal circular ring patch and the cross-shaped patch is compact, and the ratio of the ring width to the diameter and the size of the cross-shaped patch are optimized, so that the overall size of the third metal patch layer 5 is reduced while maintaining high efficiency, which is suitable for small-sized devices. The design of the center of the metal circular ring patch coincides with the center of the cross-shaped patch, which has high symmetry, so that the third metal patch layer 5 can maintain consistent electromagnetic response under different polarization states, improving the polarization consistency. The periodic structure design of the equidistant annularly arranged sub-patches enables the frequency selective surface to maintain stable transmission and reflection characteristics within an incident angle range of 0° to 60°, adapting to complex electromagnetic environments.

[0037] The thickness of the first metal patch layer 1, the second metal patch layer 3 and the third metal patch layer 5 is 0.3-0.5 μm. The thickness of the first dielectric layer 2 is 0.65-0.75 mm, the thickness of the second dielectric layer 4 is 0.5-0.6 mm, and the thickness of the third dielectric layer 6 is 0.45-0.55 mm. The first dielectric layer 2, the second dielectric layer 4 and the third dielectric layer 6 are all float glass, and the relative dielectric constant of the first dielectric layer 2, the second dielectric layer 4 and the third dielectric layer 6 is 6-6.5.

[0038] In this step, the selection of the thickness of the metal layer ensures good electrical conductivity, while avoiding material waste caused by excessive thickness and unstable electromagnetic performance caused by excessive thinness. This thickness range can effectively support the transmission and reflection of electromagnetic waves in the millimeter wave frequency band, improving the filtering performance of the frequency selective surface. At the same time, the design of different dielectric layer thicknesses is optimized to adjust the electromagnetic coupling strength between the layers, ensuring the width and stability of the passband and stopband. Float glass has a relative dielectric constant of 6-6.5, which can provide appropriate electromagnetic wave transmission speed and energy storage capacity in the millimeter wave frequency band, thereby achieving a wideband filtering effect. The combination design of dielectric layers and metal patch layers of different thicknesses can effectively suppress the influence of incident angle changes on the filtering performance, improve the angle stability, and the float glass has good thermal stability, which can maintain stable dielectric properties in high temperature environments, thereby ensuring the reliability and durability of the frequency selective surface in complex environments.

[0039] The high-efficiency frequency selection of the millimeter wave frequency band is realized through the design of the multi-layer metal patch, which can cover a wider frequency range and meet the demand of ultra-wideband communication. The concave design of the first metal patch layer 1 enhances the resonance characteristics of electromagnetic waves. The center coincidence design of the second layer of sub-patch optimizes electromagnetic coupling. The third layer of equidistant ring-shaped patch further improves the precision of frequency selection. The multi-layer synergistic effect effectively improves the selectivity, reduces the insertion loss, and ensures the efficiency of signal transmission. At the same time, the geometric design of the concave part, sub-patch and ring-shaped patch makes the metal patch structure of each layer compact, and the overall size is reduced, which is suitable for small-sized devices and high-integration application scenarios. The different geometric shapes and arrangement modes of the metal patches of each layer further optimize the filtering performance of the frequency selection surface and improve the angle stability of the frequency selection surface through interlayer coupling effect.

[0040] In one example, the miniaturized multi-layer ultra-wideband millimeter wave frequency selective surface includes a plurality of frequency selective surface units arranged periodically, which are composed of a dielectric substrate and a metal layer on the surface of the dielectric substrate. The metal layer has three layers, which are the first metal patch layer 1, the second metal patch layer 3 and the third metal patch layer 5. The first metal patch layer 1 is a solid metal square ring, and the basic metal square ring structure is bent. The second metal patch layer 3 includes a solid metal square ring plus a solid rectangular structure with a cross-shaped gap in the center. The third metal patch layer 5 includes four solid circular ring structures with a solid cross-shaped structure in the center. The first metal patch layer 1, the second metal patch layer 3 and the third metal patch layer 5 are aligned and placed. The dielectric between the metal layers is transparent float glass material, and the centers of each metal layer coincide with the surface center of the dielectric substrate.

[0041] Please refer to Figures 2 to 4The length of the square ring on any side of the first metal patch layer 1 is L1=1.8 mm, the ring width of the first metal patch layer 1 is W1=0.15 mm, the length of the bent square ring structure is L2=L4=0.45 mm, the width of the bent structure is L3=0.45 mm, L5=0.15 mm, and the equivalent circuit of the first metal patch layer 1 is a capacitor and an inductor in series. The length of the square ring on any side of the second metal patch layer 3 is L6=2.5 mm, the ring width of the second metal patch layer 3 is W2=0.2 mm, the length of the solid rectangular structure is L7=0.5 mm, the sizes of the cross-shaped slits are L8=0.05 mm and L9=0.31 mm, the second metal patch layer 3 includes a solid metal square ring plus a solid rectangular structure, and the equivalent circuit is an inductor in parallel with a capacitor. The four circular ring metal structures in the third metal patch layer 5 are centrally symmetrically arranged about the center of the third metal patch layer 5, the ring width of the four circular rings is W3=0.15 mm, the radii of the circular rings are R1=0.6 mm and R2=0.45 mm, the sizes of the cross-shaped structures are L10=0.05 mm and L11=0.51 mm, and the equivalent circuit is a capacitor and an inductor in series.

[0042] The height of the first dielectric layer 2 attached with the first metal patch layer 1 and the second metal patch layer 3 is h1=0.7 mm, the height of the second dielectric layer 4 attached with the second metal patch layer 3 and the third metal patch layer 5 is h2=0.55 mm, and the height of the second dielectric layer 4 is h3=0.5 mm. The first metal patch layer 1, the second metal patch layer 3, and the third metal patch layer 5 are all implemented by using gold-plated materials and have a thickness of 0.3-0.5 μm. In this embodiment, copper with excellent conductive effect and stable electromagnetic performance is selected as the material of the metal structure, and a plating film process is used to plate copper on a float glass sodium-calcium glass dielectric substrate.

[0043] As shown in FIG. 1, Figure 5 As shown in FIG. 1, Figure 5The graph shows the simulation results of the return loss and insertion loss response curves. The horizontal axis represents the frequency range of the electromagnetic wave, from 0 GHz to 60 GHz. The vertical axis represents the S-parameter values ​​in decibels (dB). The reflection coefficient S11 represents the proportion of the incident signal reflected back, and the transmission coefficient S21 represents the proportion of the incident signal transmitted through the structure. In most frequency ranges, S11 is close to 0 dB, indicating strong reflection. At certain frequency points (such as around 10 GHz, 30 GHz, and 50 GHz), S11 drops significantly, reaching below -10 dB, indicating weak reflection at these frequency points, with the signal mainly being transmitted or absorbed. Around 10 GHz, 30 GHz, and 50 GHz, the S21 curve reaches a low value (close to -30 dB), indicating weak transmission at these frequency points, with the signal mainly being reflected or absorbed. In other frequency ranges, S21 is close to 0 dB, indicating strong signal transmission. The strong signal transmission within the frequency range where S21 is close to 0 dB indicates that this is the passband of the frequency-selective surface. In the frequency range where S21 drops below -10dB, signal transmission is weak, indicating that this is the stopband of the frequency-selective surface. Understandably, this structure exhibits significant frequency selectivity near 10GHz, 30GHz, and 50GHz, effectively distinguishing between the passband and stopband.

[0044] like Figure 6 As shown, Figure 6 The figure shows the simulation results of the insertion loss response curves at different incident angles under TE polarization. Figure 6 The data includes multiple curves corresponding to different incident angles (0°, 10°, 20°, 30°, 40°, 50°, and 60°), exhibiting periodic fluctuations across the entire frequency range. In the frequency range where the transmission coefficient is close to 0dB, signal transmission is strong, indicating this is the passband of the frequency selective surface. In the frequency range where the transmission coefficient drops below -10dB, signal transmission is weak, indicating this is the stopband of the frequency selective surface. The passband mainly appears around 10GHz, 30GHz, and 50GHz, with a transmission coefficient close to 0dB, indicating strong signal transmission in these frequency ranges. The stopband appears around 20GHz and 40GHz, with a transmission coefficient dropping below -30dB, indicating weak signal transmission in these frequency ranges. Within the incident angle range of 0° to 60°, the trends of the curves are basically consistent, and the positions of the passband and stopband do not shift significantly, indicating that the frequency selective surface has good angular stability. Even when the incident angle increases to 60°, the change in transmission coefficient is small, indicating that the structure can maintain stable frequency selectivity performance over a wide incident angle range. This frequency-selective surface exhibits distinct passband and stopband characteristics in the 10 GHz to 60 GHz range, making it suitable for ultra-wideband applications. The position and performance of the passband and stopband remain stable within an incident angle range of 0° to 60°, adapting to complex electromagnetic environments.

[0045] Figure 7 The simulation result figure of the insertion loss response curve under TM polarization at different incident angles is provided for the present application. Under TM polarization, the curve presents periodic fluctuation in the whole frequency range, and the passband also appears near 10GHz, 30GHz and 50GHz, and the transmission coefficient is close to 0dB, indicating that the signal transmission is strong in these frequency ranges. The stopband appears near 20GHz and 40GHz, and the transmission coefficient drops to below-30dB, indicating that the signal transmission is weak in these frequency ranges and is mainly reflected or absorbed. In the incident angle range of 0° to 60°, the change trend of each curve is basically consistent, and the positions of the passband and the stopband do not shift obviously, indicating that the frequency selective surface has good angle stability. Even if the incident angle increases to 60°, the change amplitude of the transmission coefficient is small, indicating that the structure can maintain stable frequency selection performance in a wide incident angle range.

[0046] In summary, the miniaturized multilayer ultra-wideband millimeter wave frequency selective surface structure has a transmittance greater than 90% at 10.51-18.53GHz, covering the entire Ku band; the transmission coefficient is below-10dB at 19.73-49.76GHz, which can cover the K band, Ka band and part of the U band, and has good stability and polarization consistency in the incident angle range of 0-60°. According to the filtering characteristics of the frequency selective surface, the filtering effect can be realized at different frequency bands, and the unit size of the FSS is generally comparable to the wavelength of the incident electromagnetic wave. The unit size of the FSS, the thickness of the metal layer, the structure shape of the metal layer, the properties of the dielectric material and the thickness of the dielectric layer will affect the filtering effect. It can be seen that the-3dB passband is located at 10.51-18.53GHz, the-10dB stopband is located at 19.73-49.76GHz, the relative bandwidths are 55.2% and 86.4% respectively, and the transmission and reflection characteristics are maintained in the incident angle range of 0-60°, achieving excellent filtering effect and good polarization stability and angle stability.

[0047] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A miniaturized multilayer ultra-wideband millimeter wave frequency selective surface, characterized in that, The antenna includes a first metal patch layer (1), a first dielectric layer (2), a second metal patch layer (3), a second dielectric layer (4), a third metal patch layer (5) and a third dielectric layer (6) stacked in sequence, the first metal patch layer (1) has a plurality of concave parts, each of which is arranged on each side of the first metal patch layer (1); The second metal patch layer (3) includes a first sub-patch and a second sub-patch, the centers of the first sub-patch and the second sub-patch coincide, the first sub-patch is a metal square ring patch, the second sub-patch is arranged in the first sub-patch and located at the center of the first sub-patch, the second sub-patch is provided with a through hole, the through hole is located at the center of the second sub-patch, and the cross-sectional shape of the through hole is cross-shaped; The third metal patch layer (5) includes a plurality of third sub-patches arranged at equal intervals in a ring shape, a plurality of third sub-patches are arranged along the central ring array of the third metal patch layer (5), the third sub-patch includes a metal circular ring patch and a cross-shaped patch, the center of the metal circular ring patch coincides with the center of the cross-shaped patch; The first metal patch layer (1) has four side edges of equal length, the ratio of the width of the concave part to the length of the side edge of the first metal patch layer (1) is 1:12, the ratio of the length of the concave part to the length of the side edge of the first metal patch layer (1) is 1:4, and the ratio of the width of the concave part to the length of the concave part is 1:4; The ratio of the length of the second sub-patch to the length of the first sub-patch is 1:5, and the ratio of the horizontal axis length of the through hole to the length of the first sub-patch is 31:250; The ratio of the ring width of the metal circular ring patch to the diameter of the metal circular ring patch is 1:8, and the ratio of the horizontal axis length of the cross-shaped patch to the diameter of the metal circular ring patch is 17:

40.

2. The miniaturized multilayer ultra-wideband millimeter-wave frequency selective surface of claim 1, wherein, The thickness of the first metal patch layer (1), the second metal patch layer (3) and the third metal patch layer (5) is 0.3-0.5μm.

3. The miniaturized multilayer ultra-wideband millimeter-wave frequency selective surface of claim 1, wherein, The thickness of the first dielectric layer (2) is 0.65-0.75mm, the thickness of the second dielectric layer (4) is 0.5-0.6mm, and the thickness of the third dielectric layer (6) is 0.45-0.55mm.

4. The miniaturized multilayer ultra-wideband millimeter-wave frequency selective surface of claim 3, wherein, The first dielectric layer (2), the second dielectric layer (4) and the third dielectric layer (6) are all float glass, and the relative dielectric constant of the first dielectric layer (2), the second dielectric layer (4) and the third dielectric layer (6) is 6-6.5.

Citation Information

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