High-voltage starting device and high-voltage starting circuit

Abstract

The invention discloses a high-voltage starting device and a high-voltage starting circuit. The high-voltage starting device is used for starting a chip to be started, the high-voltage starting device comprises a high-voltage depletion type transistor, the source electrode of the high-voltage depletion type transistor is used for being electrically connected with the power supply end of the chip to be started, and the grid electrode of the high-voltage depletion type transistor is used for being electrically connected with the grounding end of the chip to be started. The drain electrode of the high-voltage depletion type transistor is used for being electrically connected with a high-voltage bus; the threshold voltage of the high-voltage depletion transistor is a preset multiple of the starting voltage of the to-be-started chip, and the preset multiple is greater than 1. The complexity of the high-voltage starting device structure can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular, to a high-voltage startup device and a high-voltage startup circuit. Background Art

[0002] In the related art, a chip needs to be started under high voltage. However, after the normal startup is completed, the power supply of the chip is usually provided from a low-voltage auxiliary power supply terminal, so as to achieve high efficiency and reduce losses.

[0003] However, the structure of the existing high-voltage startup device is relatively complex, which limits the application of the high-voltage startup device. Summary of the Invention

[0004] The present invention provides a high-voltage startup device and a high-voltage startup circuit to reduce the complexity of the structure of the high-voltage startup device.

[0005] According to one aspect of the present invention, a high-voltage startup device is provided for starting a chip to be started. The high-voltage startup device includes: a high-voltage depletion transistor, the source of the high-voltage depletion transistor is used to be electrically connected to the power supply terminal of the chip to be started, the gate of the high-voltage depletion transistor is used to be electrically connected to the ground terminal of the chip to be started, and the drain of the high-voltage depletion transistor is used to be electrically connected to a high-voltage bus;

[0006] The threshold voltage of the high-voltage depletion transistor is a preset multiple of the startup voltage of the chip to be started, and the preset multiple is greater than 1.

[0007] Optionally, the value range of the preset multiple is from 1.05 to 1.1.

[0008] Optionally, the high-voltage startup device further includes a current-limiting resistor, and the drain of the high-voltage depletion transistor is connected to the high-voltage bus through the current-limiting resistor.

[0009] Optionally, the high-voltage startup device further includes a packaging structure, and the high-voltage depletion transistor and the current-limiting resistor are packaged in the packaging structure.

[0010] According to another aspect of the present invention, a high-voltage startup device is provided for starting a chip to be started. The high-voltage startup device includes: a high-voltage depletion transistor and a voltage-dividing resistor, the source of the high-voltage depletion transistor is used to be electrically connected to the power supply terminal of the chip to be started, the gate of the high-voltage depletion transistor is used to be electrically connected to the ground terminal of the chip to be started through an external resistor, and the drain of the high-voltage depletion transistor is used to be electrically connected to a high-voltage bus;

[0011] The first end of the voltage-dividing resistor is electrically connected to the source electrode of the high-voltage depletion-type transistor, and the second end of the voltage-dividing resistor is electrically connected to the gate electrode of the high-voltage depletion-type transistor.

[0012] Optionally, the high-voltage starting device further includes a current-limiting resistor, and the drain electrode of the high-voltage depletion-type transistor is connected to the high-voltage bus through the current-limiting resistor.

[0013] Optionally, the high-voltage starting device further includes a packaging structure, and the high-voltage depletion-type transistor, the current-limiting resistor and the voltage-dividing resistor are packaged in the packaging structure.

[0014] According to another aspect of the present invention, a high-voltage starting circuit is provided. The high-voltage starting circuit includes the high-voltage starting device and the external resistor as described above. The first end of the external resistor is electrically connected to the gate electrode of the high-voltage depletion-type transistor, and the second end of the external resistor is used for connecting to the grounding end of the chip to be started.

[0015] Optionally, the external resistor is an adjustable resistor.

[0016] Optionally, the high-voltage starting circuit further includes a first capacitor. The first end of the first capacitor is electrically connected to the source electrode of the high-voltage depletion-type transistor, and the second end of the first capacitor is electrically connected to the gate electrode of the high-voltage depletion-type transistor; and / or,

[0017] The high-voltage starting device further includes a second capacitor. The first end of the second capacitor is electrically connected to the drain electrode of the high-voltage depletion-type transistor, and the second end of the second capacitor is electrically connected to the gate electrode of the high-voltage depletion-type transistor.

[0018] The technical solution of the embodiment of the present invention adopts a high-voltage starting device including a high-voltage depletion-type transistor. The source electrode of the high-voltage depletion-type transistor is used for electrically connecting to the power supply end of the chip to be started, the gate electrode of the high-voltage depletion-type transistor is used for electrically connecting to the grounding end of the chip to be started, and the drain electrode of the high-voltage depletion-type transistor is used for electrically connecting to the high-voltage bus; the threshold voltage of the high-voltage depletion-type transistor is a preset multiple of the starting voltage of the chip to be started, and the preset multiple is greater than 1. The high-voltage starting device can be provided with only one high-voltage depletion-type transistor, and the number of components is small, so that the loss of the high-voltage starting device is low, and the convenience of use can be increased.

[0019] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. Description of the Drawings

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0021] Figure 1 FIG. 4 is a schematic circuit diagram of a high-voltage starting device provided in Embodiment 1 of the present invention;

[0022] Figure 2 FIG. 5 is a schematic circuit diagram of the application of a high-voltage starting device provided in Embodiment 1 of the present invention;

[0023] Figure 3 FIG. 6 is a schematic circuit diagram of the application of a high-voltage starting device provided in Embodiment 2 of the present invention;

[0024] Figure 4 FIG. 7 is a schematic circuit diagram of the application of a high-voltage starting device provided in Embodiment 3 of the present invention. Detailed Embodiments

[0025] In order to enable those skilled in the art to better understand the solutions of the present invention, the following clearly and completely describes the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0026] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0027] Embodiment 1

[0028] Figure 1 FIG. 4 is a schematic circuit diagram of a high-voltage starting device provided in Embodiment 1 of the present invention, Figure 2The figure is a schematic circuit structure diagram when a high-voltage startup device provided by Embodiment 1 of the present invention is applied. Refer to Figure 1 and Figure 2 . The high-voltage startup device is used to start a chip to be started. The high-voltage startup device includes: a high-voltage depletion transistor K1. The source S of the high-voltage depletion transistor K1 is used to be electrically connected to the power supply terminal of the chip to be started. The gate G of the high-voltage depletion transistor K1 is used to be electrically connected to the ground terminal of the chip to be started. The drain D of the high-voltage depletion transistor K1 is used to be electrically connected to a high-voltage bus. The threshold voltage of the high-voltage depletion transistor K1 is a preset multiple of the startup voltage of the chip to be started, and the preset multiple is greater than 1.

[0029] Specifically, a high-voltage depletion transistor, such as a GaN transistor, conducts electricity through a two-dimensional electron gas formed by the piezoelectric effect at the interface of two materials with different bandgaps (which can be AlGaN and GaN). Since only high-concentration electrons conduct electricity in the two-dimensional electron gas, there is no problem of reverse recovery of the body diode of a silicon transistor. This means that the drain and source of the gallium nitride transistor are conducting when no voltage is applied between the gate and the source of the GaN, that is, it is a normally-on device. However, when the voltage between the gate and the source of the high-voltage depletion transistor is negative, the high-voltage depletion transistor turns off. The chip to be started is, for example, a control chip in a power electronic conversion circuit, which usually needs to introduce current from a high-voltage bus terminal to start working. The high-voltage bus provides a relatively high output voltage Vin. After the control completes normal startup, the power supply of the control chip will be switched to be provided by a low-voltage auxiliary power supply terminal, so as to achieve high efficiency and reduce losses, etc.

[0030] As Figure 2 shown, in this embodiment, the high-voltage startup device 100 is provided to include a high-voltage depletion transistor K1. The gate G of the high-voltage depletion transistor K1 is connected to the reference ground of the chip to be started, and it can be considered that the potential of the gate G is 0. When no voltage is applied directly between the gate and the source of the high-voltage depletion transistor K1, the high-voltage depletion transistor K1 is in a conducting state. That is to say, when the input voltage Vcc of the chip to be started is 0, the high-voltage depletion transistor K1 is in a conducting state, and the on-resistance is also small. The output voltage Vin of the high-voltage bus can be transmitted to the power supply terminal of the chip to be started through the high-voltage depletion transistor K1. As the input voltage Vcc of the chip to be started increases, when the input voltage Vcc of the chip to be started is greater than or equal to the threshold voltage of the high-voltage depletion transistor K1, at this time, the gate-source voltage Vgs of the high-voltage depletion transistor K1 is less than 0, and the absolute value is greater than or equal to the threshold voltage of the high-voltage depletion transistor K1. At this time, the high-voltage depletion transistor K1 turns off, thereby disconnecting the electrical connection between the high-voltage bus and the chip to be started, and since the high-voltage depletion transistor can withstand high voltage, it will not be damaged either.

[0031] In this embodiment, the threshold voltage of the high-voltage depletion-type transistor is set to be greater than the startup voltage of the chip to be started, where the startup voltage of the chip to be started is also the power-on voltage. When the input voltage Vcc of the chip to be started reaches the startup voltage, at this time, the input voltage Vcc is still less than the threshold voltage of the high-voltage depletion-type transistor, and the high-voltage depletion-type transistor remains conducting, avoiding the problem that the chip to be started cannot start normally due to the too short time for the input voltage Vcc to remain at the startup voltage. When the input voltage Vcc continues to rise and reaches or exceeds the threshold voltage of the high-voltage depletion-type transistor, the high-voltage depletion-type transistor will turn off, that is, the setting of this embodiment can ensure that the chip to be started can start normally.

[0032] In addition, the high-voltage startup device of this embodiment can be provided with only one high-voltage depletion-type transistor, with fewer components, low structural complexity, and at the same time, the loss of the high-voltage startup device can be made lower, thereby increasing the convenience of use.

[0033] The technical solution of this embodiment uses a high-voltage startup device including a high-voltage depletion-type transistor. The source electrode of the high-voltage depletion-type transistor is used to be electrically connected to the power supply terminal of the chip to be started, the gate electrode of the high-voltage depletion-type transistor is used to be electrically connected to the ground terminal of the chip to be started, and the drain electrode of the high-voltage depletion-type transistor is used to be electrically connected to the high-voltage bus; the threshold voltage of the high-voltage depletion-type transistor is a preset multiple of the startup voltage of the chip to be started, and the preset multiple is greater than 1. The high-voltage startup device can be provided with only one high-voltage depletion-type transistor, with fewer components, making the loss of the high-voltage startup device lower, thereby increasing the convenience of use.

[0034] Embodiment Two

[0035] Optionally, the value range of the preset multiple is from 1.05 to 1.1.

[0036] Specifically, if the preset multiple is too large, the input voltage Vcc of the chip to be started will also be too large, which may burn out the chip to be started. If the preset multiple is too small, the input voltage Vcc of the chip to be started may not be able to maintain the startup voltage for a long time, which may cause the chip to be started to fail to power on. The setting of this embodiment can not only ensure that the chip to be started can be powered on normally, but also avoid burning out the chip to be started.

[0037] Optionally, Figure 3 is a schematic circuit structure diagram when the high-voltage startup device provided in Embodiment Two of the present invention is applied, refer to Figure 3 . The high-voltage startup device 100 further includes a current-limiting resistor RA, and the drain D of the high-voltage depletion-type transistor is connected to the high-voltage bus through the current-limiting resistor RA.

[0038] Specifically, in this embodiment, a current-limiting resistor RA is provided. The current-limiting resistor RA can limit the magnitude of the current flowing through the high-voltage depletion-type transistor, avoiding damage to the device caused by excessive current when the high-voltage depletion-type transistor is turned on. The current-limiting resistor RA and the high-voltage depletion-type transistor K1 can be fabricated simultaneously, that is, the high-voltage depletion-type transistor K1 and the current-limiting resistor RA are fabricated on the same chip. Of course, the current-limiting resistor RA can also be fabricated on a different chip from the high-voltage depletion-type transistor K1.

[0039] Optionally, in the above embodiment, the high-voltage starting device 100 further includes a packaging structure, and the high-voltage depletion-type transistor K1 and the current-limiting resistor RA are packaged in the packaging structure. In this embodiment, the packaging structure is provided to package the high-voltage depletion-type transistor K1 and the current-limiting resistor RA in one chip, which can reduce the volume of the high-voltage starting device 100.

[0040] Embodiment III

[0041] Figure 4 FIG. is a schematic circuit structure diagram when a high-voltage starting device provided in Embodiment III of the present invention is applied. Refer to Figure 4 , the high-voltage starting device 100 of this embodiment includes a high-voltage depletion-type transistor K1 and a voltage-dividing resistor R1. The source S of the high-voltage depletion-type transistor K1 is used to be electrically connected to the power supply terminal of the chip to be started. The gate G of the high-voltage depletion-type transistor K1 is used to be electrically connected to the ground terminal of the chip to be started through an external resistor R2. The drain D of the high-voltage depletion-type transistor K1 is used to be electrically connected to the high-voltage bus. The first end of the voltage-dividing resistor R1 is electrically connected to the source S of the high-voltage depletion-type transistor K1, and the second end of the voltage-dividing resistor R1 is electrically connected to the gate G of the high-voltage depletion-type transistor K1.

[0042] Specifically, different from the structure shown in the first embodiment, when the high-voltage starting device 100 is in use in this embodiment, it needs to be electrically connected to the ground terminal of the chip to be started through an external resistor R2. The external resistor R2 can be freely selected by the user. The size of the external resistor R2 affects the magnitude of the maximum voltage output by the high-voltage starting device 100 to the chip to be started. The user can control the corresponding input voltage Vcc of the chip to be started by using external resistors R2 with different resistance values. The specific principle is as follows: Since the threshold voltage of the high-voltage depletion transistor K1 is fixed, assuming the absolute value of its threshold voltage is |Vth_Gan|, when the input voltage Vcc of the chip to be started (i.e., the output voltage of the high-voltage starting device) is divided by the voltage-dividing resistors R1 and the external resistor R2, and the divided value is equal to the threshold voltage of the high-voltage depletion transistor, the high-voltage depletion transistor turns off, that is, at this time, the input voltage Vcc is the maximum value that can be obtained. Through the above analysis, it can be known that |Vth_Gan| = Vcc*(R2) / (R1 + R2); then Vcc = |Vth_Gan|*(R1 + R2) / R2. By adjusting the value of R2, the value of Vcc can be adjusted.

[0043] In the technical solution of this embodiment, the high-voltage starting device used includes: a high-voltage depletion transistor and a voltage-dividing resistor. The source electrode of the high-voltage depletion transistor is used to be electrically connected to the power supply terminal of the chip to be started. The gate electrode of the high-voltage depletion transistor is used to be electrically connected to the ground terminal of the chip to be started through an external resistor. The drain electrode of the high-voltage depletion transistor is used to be electrically connected to the high-voltage bus; one end of the voltage-dividing resistor is electrically connected to the source electrode of the high-voltage depletion transistor, and the other end of the voltage-dividing resistor is electrically connected to the gate electrode of the high-voltage depletion transistor. The user can adjust the output voltage of the high-voltage starting device by flexibly setting the resistance value of the external resistor, so that the flexibility of the high-voltage starting device is higher.

[0044] In addition, the voltage-dividing resistor R1 and the high-voltage depletion transistor K1 can be fabricated simultaneously, that is to say, the high-voltage depletion transistor K1 and the voltage-dividing resistor R1 are fabricated on the same chip at the same time.

[0045] Embodiment Four

[0046] Reference Figure 4 , on the basis of Embodiment Three, the high-voltage starting device further includes a current-limiting resistor RA, and the drain D of the high-voltage depletion transistor is connected to the high-voltage bus through the current-limiting resistor RA.

[0047] Specifically, in this embodiment, a current-limiting resistor RA is provided. The current-limiting resistor RA can limit the magnitude of the current flowing through the high-voltage depletion-type transistor, avoiding damage to the device caused by excessive current when the high-voltage depletion-type transistor is turned on. The voltage-dividing resistor R1, the current-limiting resistor RA, and the high-voltage depletion-type transistor K1 can be fabricated simultaneously, that is to say, the high-voltage depletion-type transistor K1, the voltage-dividing resistor R1, and the current-limiting resistor RA are fabricated on the same chip. Of course, the current-limiting resistor can also be fabricated on different chips from the high-voltage depletion-type transistor.

[0048] Optionally, in the above-described embodiment, the high-voltage startup device 100 further includes a packaging structure. The high-voltage depletion-type transistor K1, the voltage-dividing resistor R1, and the current-limiting resistor RA are encapsulated within the packaging structure. In this embodiment, by providing the packaging structure and encapsulating the high-voltage depletion-type transistor K1, the voltage-dividing resistor R1, and the current-limiting resistor RA in one chip, the volume of the high-voltage startup device 100 can be reduced.

[0049] Embodiment Five

[0050] The present invention also provides a high-voltage startup circuit. As Figure 4 shown, the high-voltage startup circuit includes the high-voltage startup device 100 provided in Embodiment Three or Embodiment Four of the present invention and an external resistor R2. The first end of the external resistor R2 is electrically connected to the gate of the high-voltage depletion-type transistor, and the second end of the external resistor is used to connect to the ground terminal of the chip to be started.

[0051] Specifically, in this embodiment, the high-voltage startup device can be encapsulated on one chip, while the external resistor R2 and the high-voltage startup circuit 100 can be integrated on a circuit board. By selecting different external resistors R2, the output voltage of the high-voltage startup circuit can be adjusted.

[0052] Optionally, the external resistor R2 is an adjustable resistor. Specifically, when the high-voltage startup device 100 and the external resistor R2 are integrated on a circuit board, the external resistor R2 is set as an adjustable resistor, and the user can adjust the output voltage of the high-voltage startup circuit by adjusting the resistance value of the adjustable resistor.

[0053] Optionally, referring to Figures 2 to 4 , the high-voltage startup circuit may further include a first capacitor Cout. The first end of the first capacitor Cout is electrically connected to the source S of the high-voltage depletion-type transistor K1, and the second end of the first capacitor Cout is electrically connected to the gate G of the high-voltage depletion-type transistor K1. The first capacitor Cout can be used for output voltage filtering, thereby improving the stability of the output voltage. The first capacitor Cout can be integrated within the high-voltage startup device 100, that is, fabricated on the same chip as the high-voltage startup device 100, or can be provided outside the high-voltage startup device 100 and integrated on a circuit board with the high-voltage startup device 100.

[0054] Optionally, the high-voltage startup circuit may further include a second capacitor Cin. The first end of the second capacitor Cin is electrically connected to the drain D of the high-voltage depletion transistor K1, and the second end of the second capacitor Cin is electrically connected to the gate G of the high-voltage depletion transistor K1. The second capacitor Cin can be used for filtering the output voltage Vin of the high-voltage bus, thereby improving the stability of the output voltage of the high-voltage bus. The second capacitor Cin can be integrated within the high-voltage startup device 100, that is, fabricated on the same chip as the high-voltage startup device 100, or can be disposed outside the high-voltage startup device 100 and integrated with the high-voltage startup device 100 on a circuit board.

[0055] It should be understood that various forms of the processes shown above can be used, with steps reordered, added, or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is imposed herein.

[0056] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A high-voltage startup device for starting a chip to be started, Characterized in that, The high-voltage startup device includes: a high-voltage depletion transistor, the source of the high-voltage depletion transistor is used to be electrically connected to the power supply terminal of the chip to be started, the gate of the high-voltage depletion transistor is used to be electrically connected to the ground terminal of the chip to be started, and the drain of the high-voltage depletion transistor is used to be electrically connected to a high-voltage bus; The threshold voltage of the high-voltage depletion transistor is a preset multiple of the startup voltage of the chip to be started, and the preset multiple is greater than 1.

2. The high-voltage startup device according to claim 1, Characterized in that, The value range of the preset multiple is from 1.05 to 1.

1.

3. The high-voltage startup device according to claim 1, Characterized in that, The high-voltage startup device further includes a current-limiting resistor, and the drain of the high-voltage depletion transistor is connected to the high-voltage bus through the current-limiting resistor.

4. The high-voltage startup device according to claim 3, Characterized in that, The high-voltage startup device further includes a packaging structure, and the high-voltage depletion transistor and the current-limiting resistor are packaged in the packaging structure.

5. A high-voltage startup device for starting a chip to be started, Characterized in that, The high-voltage startup device includes: a high-voltage depletion transistor and a voltage-dividing resistor, the source of the high-voltage depletion transistor is used to be electrically connected to the power supply terminal of the chip to be started, the gate of the high-voltage depletion transistor is used to be electrically connected to the ground terminal of the chip to be started through an external resistor, and the drain of the high-voltage depletion transistor is used to be electrically connected to a high-voltage bus; The first end of the voltage-dividing resistor is electrically connected to the source of the high-voltage depletion transistor, and the second end of the voltage-dividing resistor is electrically connected to the gate of the high-voltage depletion transistor.

6. The high-voltage startup device according to claim 5, Characterized in that, The high-voltage startup device further includes a current-limiting resistor, and the drain of the high-voltage depletion transistor is connected to the high-voltage bus through the current-limiting resistor.

7. The high-voltage startup device according to claim 6, Characterized in that, The high-voltage startup device further includes a packaging structure, and the high-voltage depletion transistor, the current-limiting resistor and the voltage-dividing resistor are packaged in the packaging structure.

8. A high-voltage startup circuit, Characterized in that, The high-voltage startup circuit includes the high-voltage startup device according to any one of claims 5-7 and the external resistor, the first end of the external resistor is electrically connected to the gate of the high-voltage depletion transistor, and the second end of the external resistor is used to be connected to the ground terminal of the chip to be started.

9. The high-voltage startup circuit according to claim 8, Characterized in that, The external resistor is an adjustable resistor.

10. The high-voltage startup circuit according to claim 8, Characterized in that, The high-voltage startup circuit further includes a first capacitor, the first end of the first capacitor is electrically connected to the source of the high-voltage depletion transistor, and the second end of the first capacitor is electrically connected to the gate of the high-voltage depletion transistor; and / or, The high-voltage starting device further includes a second capacitor. A first end of the second capacitor is electrically connected to a drain of the high-voltage depletion-type transistor, and a second end of the second capacitor is electrically connected to a gate of the high-voltage depletion-type transistor.

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