Crystal film preparation method and preparation device

Abstract

The invention discloses a crystal film preparation method and device, and the method comprises the steps: providing an evaporation substrate; evaporating an initial film layer of In atoms or X atoms on the evaporation substrate; evaporating the main ingredient to bond In atoms and / or X atoms to the initial film layer in proportion; wherein X is selected from one or more of Sb, As and Ga. The crystal film preparation method and the preparation device have the beneficial effects that the adhesion and the film formation of the semiconductor crystal film can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular, to a crystal film manufacturing method and a manufacturing device. Background Art

[0002] MEMS (Micro-Electro-Mechanical Systems) devices are a revolutionary development in the field of semiconductor devices after Si transistors, and thermal sensors occupy an important position in MEMS sensors.

[0003] In the manufacturing process of thermal-sensitive MEMS chips, an important process is to grow a crystalline or amorphous film that meets certain functional requirements on a SiN / Si substrate by evaporation, sputtering or other more modern technologies.

[0004] Semiconductors such as inSb are high-quality thermosensitive functional materials due to their small band gap, high electron mobility and mature film-making technology.

[0005] However, if InSb crystal powder is used as an evaporation source and is directly placed in a heating boat for heating and evaporation, it is not easy to obtain a solid crystal film with a suitable chemical ratio on the surface of a smooth SiN / Si substrate.

[0006] This is because the Sb component in the lnSb source decomposes and volatilizes first due to its higher vapor pressure. However, these first evaporated Sb atoms cannot effectively attach to the surface of the smooth SiN / Si substrate to form nuclei and further expand and grow, thus affecting the entire evaporation and film formation process, and ultimately affecting the performance quality of the evaporated crystal film. Summary of the invention

[0007] The content of this application is used to introduce concepts in a brief form, which will be described in detail in the detailed implementation section below. The content of this application is not intended to identify the key features or essential features of the technical solution claimed for protection, nor is it intended to limit the scope of the technical solution claimed for protection.

[0008] Some embodiments of the present application propose a crystal film preparation method and a preparation device to solve the technical problems mentioned in the above background technology section.

[0009] As a first aspect of the present application, some embodiments of the present application provide a method for preparing a crystal film, comprising: providing a vapor deposition substrate; vapor depositing an initial film layer of In atoms or X atoms on the vapor deposition substrate; evaporating a main material so that In atoms and / or X atoms are combined with the initial film layer in proportion; wherein X is selected from one or more of Sb, As, and Ga.

[0010] Optionally, in some embodiments of the present application, the initial film layer is an initial film layer of In atoms.

[0011] Optionally, in some embodiments of the present application, the initial film layer is an atomic layer deposition film of In atoms.

[0012] Optionally, in some embodiments of the present application, when the main material is evaporated so that In atoms and / or X atoms are bonded to the initial film layer in proportion, the Sb atoms are bonded to the initial film layer in advance.

[0013] Optionally, in some embodiments of the present application, the evaporation substrate is a SiN substrate or a Si substrate. As the second aspect of the present application, some embodiments of the present application provide a crystal film preparation device for implementing the aforementioned preparation method, including: a main material boat for accommodating a main material; an auxiliary material boat for accommodating an auxiliary material; a main heating source for heating the main material boat; an auxiliary heating source for heating the auxiliary material boat; a controller for controlling the main heating source and the auxiliary heating source; wherein the controller controls the auxiliary heating source to heat the auxiliary material boat for a preset time and then controls the main heating source to heat the main material boat.

[0014] Optionally, in some embodiments of the present application, the crystal film preparation device further includes: A main baffle device, used to shield the main material boat; An auxiliary baffle device, used to shield the auxiliary material boat; Wherein, the controller is respectively connected to the main baffle device and the auxiliary baffle device so that the controller can control the main baffle device and the auxiliary baffle device respectively.

[0015] Optionally, in some embodiments of the present application, the crystal film preparation device further includes: A main material chamber, used to contain the steam generated by the main material boat; An auxiliary material chamber, used to contain the steam generated by the auxiliary material boat; A substrate chamber, used for accommodating an evaporation substrate; Wherein, the main material chamber and the auxiliary material chamber are arranged in isolation; the main material chamber and the auxiliary material chamber are controllably connected to the base chamber respectively.

[0016] Optionally, in some embodiments of the present application, the crystal film preparation device further includes: A main chamber valve, used to control the communication between the main material chamber and the substrate chamber; An auxiliary chamber valve, used to control the communication between the auxiliary material chamber and the base chamber; Wherein, the controller is respectively connected to the main chamber valve and the auxiliary control valve so that the controller can control the main chamber valve and the negative control valve respectively.

[0017] Optionally, in some embodiments of the present application, the controller pulse-drives at least one of the main heating source, the main baffle device, and the main chamber valve so that the steam generated by the main material enters the base chamber in a pulsed manner; and / or, the controller pulse-drives at least one of the auxiliary heating source, the auxiliary baffle device, and the auxiliary chamber valve so that the steam generated by the auxiliary material enters the base chamber in a pulsed manner.

[0018] The beneficial effect of the present application is that it provides a crystal film preparation method and a preparation device that can improve the adhesion and film formation of semiconductor crystal films. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings constituting a part of this application are used to provide a further understanding of this application, so that other features, purposes and advantages of this application become more obvious. The illustrative embodiment drawings and their descriptions of this application are used to explain this application and do not constitute an improper limitation on this application.

[0020] In addition, throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and that the components and elements are not necessarily drawn to scale.

[0021] In the attached picture: Figure 1 It is a schematic diagram of the main steps of a crystal film preparation method according to an embodiment of the present application; Figure 2 It is a schematic diagram of the steps and principles of a method for preparing a crystal film according to an embodiment of the present application; Figure 3 is a schematic diagram of the physical structure of a crystal film preparation device according to an embodiment of the present application; Figure 4 yes Figure 3 The internal structure schematic diagram of the crystal film preparation device shown; Figure 5 is a schematic structural diagram of a crystal film preparation device according to another embodiment of the present application; Figure 6 yes Figure 5 The schematic diagram of the control system architecture of the crystal film preparation device shown; Figure 7 yes Figure 5 Schematic diagram of the driving signal of the crystal film preparation device shown.

[0022] Meaning of the reference symbols: 10. Evaporation substrate; 20. Auxiliary material atoms; 30. Main material atoms; 40. Auxiliary material blocks; 50. Main material blocks; 100, crystal film preparation device; 100a, evaporation chamber; 110, main heating source; 120, auxiliary heating source; 130, main baffle device; 140, auxiliary baffle device; 200, crystal film preparation device; 201, main material box; 201a, main material chamber; 202, auxiliary material box; 202a, auxiliary material chamber; 203, evaporation box; 203c, substrate chamber; 204, base; 210, main heating source; 220, auxiliary heating source; 230, main baffle device; 240, auxiliary baffle device; 250, main chamber valve; 260, auxiliary chamber valve; 270, main material boat; 280, auxiliary material boat; 290, controller. DETAILED DESCRIPTION

[0023] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided to provide a more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are only for exemplary purposes and are not intended to limit the scope of protection of the present disclosure.

[0024] It should also be noted that, for ease of description, only the parts related to the invention are shown in the drawings. In the absence of conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0025] It should be noted that the concepts such as "first" and "second" mentioned in the present disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0026] It should be noted that the modifications of "one" and "plurality" mentioned in the present disclosure are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0027] The names of the messages or information exchanged between multiple devices in the embodiments of the present disclosure are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0028] The present disclosure will be described in detail below with reference to the accompanying drawings and in conjunction with embodiments.

[0029] Reference Figure 1 As shown, the crystal film preparation method of the present application comprises the following steps: S100: providing a vapor deposition substrate.

[0030] S200: vapor-depositing an initial film layer of In atoms or X atoms on the vapor-deposition substrate.

[0031] S300: The main material is evaporated so that In atoms and / or X atoms are bonded to the initial film layer in proportion.

[0032] Wherein, X is selected from one or more of Sb, As, and Ga.

[0033] The advantage of adopting the above scheme is that a single-element initial film layer can be first attached to the vapor deposition substrate. Compared with the non-single-element film layer, the pre-attached initial film layer can provide a basis for subsequent atomic attachment and further nucleate and grow as the vapor deposition continues.

[0034] In some embodiments of the present application, the initial film layer is an initial film layer of In atoms.

[0035] In some embodiments of the present application, the initial film layer is an atomic layer deposition film of In atoms.

[0036] In some embodiments of the present application, when the main material is evaporated so that In atoms and / or X atoms are bonded to the initial film layer in proportion, Sb atoms are bonded to the initial film layer in advance.

[0037] In some embodiments of the present application, the evaporated substrate is a SiN substrate or a Si substrate.

[0038] Reference Figure 2 As shown, as one of the specific schemes of the present application, a Si vapor deposition substrate can be provided; then, the In auxiliary material is heated to obtain an In atomic film at the Si vapor deposition substrate. Then, the main material of InSb is heated to form an InSb crystal film of the required proportion on the In atomic film. The above method is also applicable to the preparation of semiconductors such as InAs, InAsSb, and InGaSb. The vapor deposition substrate can also be a substrate material such as a sapphire sheet, GaAs, or even glass.

[0039] Reference Figure 3 to Figure 4 As shown, some embodiments of the present application provide a first crystal film preparation device 100 for implementing the aforementioned preparation method, and the crystal film preparation device 100 includes: a main material boat (not shown in the figure), an auxiliary material boat (not shown in the figure), a main heating source 110, and an auxiliary heating source 120.

[0040] Specifically, the crystal film preparation device 100 includes an evaporation chamber 100a, in which two heating positions for placing a main material boat and an auxiliary material boat are provided, and a main heating source 110 and an auxiliary heating source 120 are respectively provided below the two heating positions; and a main baffle device 130 and an auxiliary baffle device 140 are respectively provided above the two heating positions.

[0041] More specifically, the main material boat is used to hold the main material; the auxiliary material boat is used to hold the auxiliary material; the main heating source 110 is used to heat the main material boat; the auxiliary heating source 120 is used to heat the auxiliary material boat; the controller is used to control the main heating source 110 and the auxiliary heating source 120; wherein, the controller controls the auxiliary heating source 120 to heat the auxiliary material boat for a preset time and then controls the main heating source 110 to heat the main material boat. The evaporation amount of the main material and the auxiliary material can be controlled by controlling the main heating source 110 and the auxiliary heating source 120, but since evaporation cannot be generated immediately after heating, preheating is generally used to ensure the continuity of the evaporation process, so it is necessary to shield the steam generated by the main material boat and the auxiliary material boat respectively through the main baffle device 130 and the auxiliary baffle device 140, so as to achieve control of the evaporation source of only the main material boat or the auxiliary material boat.

[0042] Reference Figure 5 and Figure 6 As shown in the figure, as another solution of the present application, the crystal film preparation device 200 includes: a main material box 201, an auxiliary material box 202, a vapor deposition box 203, a base base 204, a main heating source 210 , auxiliary heating source 220 , main baffle device 230 , auxiliary baffle device 240 , main chamber valve 250 , auxiliary chamber valve 260 , main material boat 270 , auxiliary material boat 280 and controller 290 .

[0043] The main material box 201 is formed with a main material chamber 201a, and the auxiliary material box 202 is formed with an auxiliary material chamber 202a, wherein the main material chamber 201a is used to provide a space for evaporation of the main material block; the auxiliary material chamber 202a is used to provide a space for evaporation of the auxiliary material block. The evaporation box 203 is used to form a base chamber 203c, and the base chamber 203c is used to accommodate the evaporation substrate and provide a space for the evaporation vapor to move toward the evaporation substrate. More specifically, a base 204 for mounting the evaporation substrate is provided in the base chamber 203c.

[0044] The main material boat 270 is arranged in the main material chamber 201a. The main material boat 270 is mainly used to prevent the main material from blocking. The main heating source 210 is arranged below the main material boat 270 to heat the main material boat 270. As an optional solution, the main heating source 210 can use a resistive heat source.

[0045] The main baffle device 230 is used to block the steam generated by the main material block. In order to better control the evaporation process, a main chamber valve 250 is set at the connection between the main material chamber 201a and the substrate chamber 203c. The main chamber valve 250 can be specifically an iris valve, which can control the flux connecting the main material chamber 201a and the substrate chamber 203c, thereby controlling the entry amount of the main material block into the substrate chamber 203c, so as to better control the material composition of the evaporated crystal film.

[0046] Similarly, the auxiliary material boat 280 is disposed in the auxiliary material chamber 202a. The auxiliary material boat 280 is mainly used to prevent auxiliary material blocks. The auxiliary heating source 220 is disposed under the auxiliary material boat 280 to heat the auxiliary material boat 280. As an optional solution, the auxiliary heating source 220 can be a resistive heat source.

[0047] The auxiliary baffle device 240 is used to block the steam generated by the auxiliary material block. In order to better control the evaporation process, an auxiliary chamber valve 260 is set at the connection between the auxiliary material chamber 202a and the substrate chamber 203c. The auxiliary chamber valve 260 can be specifically an iris valve, which can control the flux connecting the auxiliary material chamber 202a and the substrate chamber 203c, thereby controlling the amount of auxiliary material blocks entering the substrate chamber 203c, so as to better control the material composition of the evaporated crystal film.

[0048] Reference Figure 6 As shown, the controller 290 is electrically connected to the main heating source 210, the auxiliary heating source 220, the main shielding device, the auxiliary shielding device, the main chamber valve 250 and the auxiliary chamber valve 260, so that the main heating source 210, the auxiliary heating source 220, the main shielding device, the auxiliary shielding device, the main chamber valve 250 and the auxiliary chamber valve 260 can be controlled according to a program or according to detection results.

[0049] The above scheme allows the controller 290 to heat by controlling the auxiliary heating source 220, and at the same time, the auxiliary baffle device 240 opens the space above the auxiliary material boat 280, so that the steam of the auxiliary material block rises, and then the controller 290 controls the flow of steam entering the substrate chamber 203c through the opening of the auxiliary chamber valve 260. After the initial film layer is evaporated, the auxiliary chamber valve 260 is closed first, and then the auxiliary baffle device 240 is used to block the top of the auxiliary material block; finally, the auxiliary heating source 220 is turned off or the power of the auxiliary heating source 220 is reduced. Then the main material block begins to evaporate. Of course, the main heating source 210 can be operated in advance to achieve a certain degree of heating of the main material block to generate a small amount of steam. However, before completing the initial film layer, the auxiliary shielding device and the auxiliary chamber valve 260 are temporarily controlled to prevent the steam in the auxiliary material chamber 202a from entering the substrate chamber 203c. When it is necessary to further form a crystal film on the initial film layer, at this time, the auxiliary shielding device is controlled to open the space above the main material boat 270, and at the same time, the auxiliary chamber valve 260 is opened proportionally to carry out the evaporation of the main material.

[0050] In addition to the difficulty in attaching the evaporation substrate, in the process of nucleus growth, in some cases, the auxiliary material chamber 202a still needs to be opened for assistance, which can better solve the problems caused by evaporation of the main material block alone.

[0051] Reference Figure 7As shown, as a preferred solution, the controller 290 can control the main heating source 210, the auxiliary heating source 220, the main shielding device, the auxiliary shielding device, the main chamber valve 250 and the auxiliary chamber valve 260 through a pulse driving signal.

[0052] More specifically, the controller 290 can drive the opening and closing of the main cavity valve 250 and the abdominal cavity valve through a pulsed driving signal, so that the steam enters the substrate chamber 203c in the form of pulses, thereby better obtaining a crystal film formed by proportional atomic deposition.

[0053] Reference Figure 7 As shown, the pulse cycles of the controller 290 are of equal length, and the pulse amplitude can change on a continuous curve, and the continuous curve gradually rises first and then gradually falls after reaching an inflection point. In this way, the thickness of the crystal film can be controlled more accurately.

[0054] The above descriptions are only some preferred embodiments of the present disclosure and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the embodiments of the present disclosure is not limited to the technical solutions formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above inventive concept. For example, the above features are replaced with (but not limited to) technical features with similar functions disclosed in the embodiments of the present disclosure.

Claims

1. A method for preparing a crystal film, characterized in that: The crystal film preparation method comprises: providing a vapor deposition substrate; Vapor-depositing an initial film layer of In atoms or X atoms on the vapor-deposition substrate; The main material is evaporated so that In atoms and / or X atoms are bonded to the initial film layer in proportion; Wherein, the X is selected from one or more of Sb, As and Ga.

2. The method for preparing a crystal film according to claim 1, characterized in that: in, The initial film layer is an initial film layer of In atoms.

3. The method for preparing a crystal film according to claim 2, characterized in that: in, The initial film layer is an atomic layer deposition film of In atoms.

4. The method for preparing a crystal film according to claim 3, characterized in that: in, When the main material is evaporated so that In atoms and / or X atoms are bonded to the initial film layer in proportion, the Sb atoms are bonded to the initial film layer in advance.

5. The method for preparing a crystal film according to claim 4, characterized in that: in, The evaporation substrate is a SiN substrate or a Si substrate.

6. A crystal film preparation device for implementing the crystal film preparation method according to any one of claims 1 to 5, characterized in that: The crystal film preparation device comprises: A main material boat, used for accommodating the main material; Auxiliary material boat, used for accommodating auxiliary materials; A main heating source, used to heat the main material boat; Auxiliary heating source, used for heating the auxiliary material boat; A controller, used to control the main heating source and the auxiliary heating source; Wherein, the controller controls the auxiliary heating source to heat the auxiliary material boat for a preset time and then controls the main heating source to heat the main material boat.

7. The crystal film preparation device according to claim 6, Features: Wherein, the crystal film preparation device also includes: A main baffle device, used to shield the main material boat; An auxiliary baffle device, used to shield the auxiliary material boat; Wherein, the controller is respectively connected to the main baffle device and the auxiliary baffle device so that the controller can control the main baffle device and the auxiliary baffle device respectively.

8. The crystal film preparation device according to claim 7, Features: Wherein, the crystal film preparation device also includes: A main material chamber, used to contain the steam generated by the main material boat; An auxiliary material chamber, used to contain the steam generated by the auxiliary material boat; A substrate chamber, used for accommodating an evaporation substrate; Wherein, the main material chamber and the auxiliary material chamber are arranged in isolation; the main material chamber and the auxiliary material chamber are controllably connected to the base chamber respectively.

9. The crystal film preparation device according to claim 8, Features: Wherein, the crystal film preparation device also includes: A main chamber valve, used to control the communication between the main material chamber and the substrate chamber; An auxiliary chamber valve, used to control the communication between the auxiliary material chamber and the base chamber; Wherein, the controller is respectively connected to the main chamber valve and the auxiliary control valve so that the controller can control the main chamber valve and the negative control valve respectively.

10. The crystal film preparation device according to claim 9, characterized in that: in, The controller drives at least one of the main heating source, the main baffle device, and the main chamber valve in a pulsed manner so that the steam generated by the main material enters the base chamber in a pulsed manner; And / or, the controller drives at least one of the auxiliary heating source, the auxiliary baffle device, and the auxiliary chamber valve in pulses so that the steam generated by the auxiliary material enters the base chamber in a pulsed manner.

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