Screen expansion compensation method and device of mask plate, display panel, computer equipment, readable storage medium and program product

Abstract

The invention relates to a net stretching compensation method and device of a mask plate, a display panel, computer equipment, a readable storage medium and a program product. The method comprises the following steps: acquiring initial position information of each mask strip of a mask plate to be compensated; according to the initial position information of each mask strip, determining a first net-stretching compensation amount and a second net-stretching compensation amount, the first net-stretching compensation amount including a first net-stretching compensation amount of each mask strip in a first direction, and the second net-stretching compensation amount including a second net-stretching compensation amount of each mask strip in a second direction, the first direction is orthogonal to the second direction; and when the to-be-compensated mask plate is subjected to net stretching, net stretching compensation processing is performed on the to-be-compensated mask plate according to the first net stretching compensation amount and the second net stretching compensation amount. By adopting the method, the net expansion compensation of the mask plate can be realized.

Description

Technical Field

[0001] The present application relates to the technical field of mask plates, and in particular to a method, device, display panel, computer equipment, readable storage medium and program product for compensating for mask plate tension. Background Art

[0002] The mask plate forms pixel units by precisely controlling the deposition positions of red, green and blue organic materials on the substrate, thereby ensuring high-quality display of OLED (Organic Light-Emitting Diode) display panels.

[0003] In the actual process of evaporating organic materials, both the mask and the substrate will deform due to high temperature, causing the opening on the mask to deviate from the corresponding position on the substrate. Therefore, the mask tension compensation amount needs to be considered so that the mask opening can still perfectly overlap with the corresponding position on the substrate during the evaporation process. Therefore, how to achieve mask tension compensation has become an urgent problem to be solved. Summary of the invention

[0004] Based on this, it is necessary to provide a mask stretch compensation method, device, display panel, computer equipment, readable storage medium and program product that can realize mask stretch compensation in response to the above technical problems.

[0005] In a first aspect, the present application provides a method for compensating for the stretching of a mask plate, the method comprising: obtaining initial position information of each mask strip of the mask plate to be compensated; determining a first stretching compensation amount and a second stretching compensation amount according to the initial position information of each mask strip, the first stretching compensation amount comprising the stretching compensation amount of each mask strip in a first direction, the second stretching compensation amount comprising the stretching compensation amount of each mask strip in a second direction, the first direction being orthogonal to the second direction; when the mask plate to be compensated is being stretched, performing stretching compensation processing on the mask plate to be compensated according to the first stretching compensation amount and the second stretching compensation amount of each mask strip.

[0006] In one of the embodiments, a first mesh compensation amount and a second mesh compensation amount are determined according to initial position information of each mask strip, including: simulating and emulating the processes of vapor deposition of a mask plate to be compensated on multiple different substrates to obtain multiple simulation results; determining a first mapping relationship according to the multiple simulation results, the first mapping relationship being used to characterize the correspondence between the initial position information of each mask strip and the mesh compensation amount of each mask strip in a first direction; determining a second mapping relationship according to the multiple simulation results, the second mapping relationship being used to characterize the correspondence between the initial position information of each mask strip and the mesh compensation amount of each mask strip in a second direction; determining the first mesh compensation amount according to the initial position information of each mask strip and the first mapping relationship; determining the second mesh compensation amount according to the initial position information of each mask strip and the second mapping relationship.

[0007] In one of the embodiments, the multiple different substrates include a reference substrate and a multiple comparison substrates, and the processes of vapor deposition of the mask plate to be compensated on the multiple different substrates are simulated and processed respectively to obtain multiple simulation results, including: the process of vapor deposition of the mask plate to be compensated on the multiple comparison substrates is simulated and processed to obtain a first offset set corresponding to each mask strip and a second offset set corresponding to each mask strip, the first offset set includes a first offset of the mask strip relative to each comparison substrate in a first direction; the second offset set includes a second offset of the mask strip relative to each comparison substrate in a second direction; the process of vapor deposition of the mask plate to be compensated on the reference substrate is simulated and processed to obtain a first reference offset corresponding to each mask strip and a second reference offset corresponding to each mask strip; the first reference offset is the offset of the mask strip relative to the reference substrate in the first direction; the second reference offset is the offset of the mask strip relative to the reference substrate in the second direction; the first offset set, the second offset set, the first reference offset, and the second reference offset corresponding to each mask strip are used as multiple simulation results.

[0008] In one embodiment, determining the first mapping relationship according to multiple simulation results includes: for each mask strip, performing mean processing on multiple first offsets in the first offset set corresponding to the mask strip to obtain a first target offset corresponding to the mask strip; obtaining a net stretching compensation amount of each mask strip in the first direction according to the first target offset corresponding to each mask strip and the first reference offset corresponding to each mask strip; obtaining the first mapping relationship according to the net stretching compensation amounts of multiple mask strips in the first direction;

[0009] Optionally, a second mapping relationship is determined based on multiple simulation results, including: for each mask strip, averaging multiple second offsets in the second offset set corresponding to the mask strip to obtain the second target offset corresponding to the mask strip; obtaining the net stretching compensation amount of each mask strip in the second direction based on the second target offset corresponding to each mask strip and the second reference offset corresponding to each mask strip; and obtaining the second mapping relationship based on the net stretching compensation amounts of multiple mask strips in the second direction.

[0010] In one embodiment, obtaining the first mapping relationship according to the net stretching compensation amounts of the plurality of mask strips in the first direction includes: performing fitting processing on the net stretching compensation amounts of the plurality of mask strips in the first direction to obtain an initial first mapping relationship; and correcting the initial first mapping relationship to obtain the first mapping relationship;

[0011] Optionally, the modifying the initial first mapping relationship to obtain the first mapping relationship includes: modifying the initial first mapping relationship according to a first modification parameter to obtain the first mapping relationship;

[0012] Optionally, the first correction parameter is determined according to at least one of an evaporation device and a number of wafers.

[0013] In one embodiment, the obtaining of the second mapping relationship according to the net stretching compensation amounts of the plurality of mask strips in the second direction comprises: performing fitting processing on the net stretching compensation amounts of the plurality of mask strips in the second direction to obtain an initial second mapping relationship; and correcting the initial second mapping relationship to obtain the second mapping relationship;

[0014] Optionally, correcting the initial second mapping relationship to obtain the second mapping relationship includes: correcting the initial second mapping relationship according to a second correction parameter to obtain the second mapping relationship;

[0015] Optionally, the second correction parameter is determined according to at least one of an evaporation device and a number of wafers.

[0016] In a second aspect, the present application further provides a mask plate tension compensation device, the device comprising:

[0017] An acquisition module, used for acquiring initial position information of each mask strip of the mask plate to be compensated;

[0018] A first determination module is used to determine a first net compensation amount and a second net compensation amount according to initial position information of each mask strip, the first net compensation amount includes a net compensation amount of each mask strip in a first direction, and the second net compensation amount includes a net compensation amount of each mask strip in a second direction, and the first direction is orthogonal to the second direction;

[0019] The second determining module is used to perform a net stretching compensation process on the mask plate to be compensated according to the first net stretching compensation amount and the second net stretching compensation amount when the mask plate to be compensated is being stretched.

[0020] In one of the embodiments, the first determination module is specifically used to simulate the process of evaporating the compensation mask plate on multiple different substrates to obtain multiple simulation results; determine a first mapping relationship based on the multiple simulation results, and the first mapping relationship is used to characterize the corresponding relationship between the initial position information of each mask strip and the net stretching compensation amount of each mask strip in the first direction; determine a second mapping relationship based on the multiple simulation results, and the second mapping relationship is used to characterize the corresponding relationship between the initial position information of each mask strip and the net stretching compensation amount of each mask strip in the second direction; determine the first net stretching compensation amount based on the initial position information of each mask strip and the first mapping relationship; determine the second net stretching compensation amount based on the initial position information of each mask strip and the second mapping relationship.

[0021] In one embodiment, the multiple different substrates include a reference substrate and multiple comparison substrates, and the first determination module is specifically used to simulate the process of vapor deposition of the compensation mask plate on the multiple comparison substrates to obtain a first offset set corresponding to each mask strip and a second offset set corresponding to each mask strip, the first offset set includes a first offset of the mask strip relative to each comparison substrate in a first direction; the second offset set includes a second offset of the mask strip relative to each comparison substrate in a second direction; the process of vapor deposition of the compensation mask plate on the reference substrate is simulated to obtain a first reference offset corresponding to each mask strip and a second reference offset corresponding to each mask strip; the first reference offset is the offset of the mask strip relative to the reference substrate in the first direction; the second reference offset is the offset of the mask strip relative to the reference substrate in the second direction; the first offset set, the second offset set, the first reference offset and the second reference offset corresponding to each mask strip are used as multiple simulation results.

[0022] In one of the embodiments, the first determination module is specifically used to perform mean processing on multiple first offsets in the first offset set corresponding to each mask strip to obtain a first target offset corresponding to the mask strip; obtain a net stretching compensation amount of each mask strip in the first direction according to the first target offset corresponding to each mask strip and the first reference offset corresponding to each mask strip; obtain a first mapping relationship according to the net stretching compensation amounts of multiple mask strips in the first direction;

[0023] Optionally, the first determination module is specifically used to perform mean processing on multiple second offsets in the second offset set corresponding to each mask strip to obtain the second target offset corresponding to the mask strip; obtain the net stretching compensation amount of each mask strip in the second direction according to the second target offset corresponding to each mask strip and the second reference offset corresponding to each mask strip; and obtain the second mapping relationship according to the net stretching compensation amounts of multiple mask strips in the second direction.

[0024] In one embodiment, the first determination module is specifically used to perform fitting processing on the tension compensation amounts of the plurality of mask strips in the first direction to obtain an initial first mapping relationship; and to correct the initial first mapping relationship to obtain a first mapping relationship;

[0025] Optionally, the first determining module is specifically configured to correct the initial first mapping relationship according to a first correction parameter to obtain the first mapping relationship;

[0026] Optionally, the first correction parameter is determined according to at least one of an evaporation device and a number of wafers.

[0027] In one embodiment, the first determination module is specifically used to perform fitting processing on the tension compensation amounts of the plurality of mask strips in the second direction to obtain an initial second mapping relationship; and to correct the initial second mapping relationship to obtain a second mapping relationship;

[0028] Optionally, the first determining module is specifically configured to correct the initial second mapping relationship according to a second correction parameter to obtain the second mapping relationship;

[0029] Optionally, the second correction parameter is determined according to at least one of an evaporation device and a number of wafers.

[0030] In a third aspect, the present application further provides a computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of any one of the methods described in the first aspect when executing the computer program.

[0031] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of any one of the methods described in the first aspect are implemented.

[0032] In a fifth aspect, the present application further provides a computer program product, comprising a computer program, which, when executed by a processor, implements the steps of any one of the methods described in the first aspect.

[0033] In a sixth aspect, the present application further provides a display panel, which is obtained by performing evaporation of a stretched mask plate using the mask plate stretching compensation method described in any one of the first aspects above.

[0034] The above-mentioned method, device, display panel, computer equipment, readable storage medium and program product for compensation of the mask plate obtain the initial position information of each mask strip of the mask plate to be compensated; determine the first compensation amount and the second compensation amount according to the initial position information of each mask strip, the first compensation amount includes the compensation amount of each mask strip in the first direction, and the second compensation amount includes the compensation amount of each mask strip in the second direction, and the first direction is orthogonal to the second direction. Then, when the mask plate to be compensated is stretched, the mask plate to be compensated is subjected to stretching compensation processing according to the first compensation amount and the second compensation amount, so that the stretching compensation of the mask plate is realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the drawings required for use in the embodiments of the present application or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 is a schematic diagram of deformation of a mask strip in a first direction and a second direction during an evaporation process in one embodiment;

[0037] Figure 2 is a schematic diagram of deformation of a mask strip in a first direction and a second direction during evaporation in another embodiment;

[0038] Figure 3 is a schematic diagram of deformation of a substrate during evaporation in one embodiment;

[0039] Figure 4 1 is a schematic flow chart of a method for compensating a mask screen in one embodiment;

[0040] Figure 5 is a schematic flow chart of a method for compensating a mask screen in another embodiment;

[0041] Figure 6 A trend diagram of the outward expansion of the mask strip from the center of the mask plate to both sides in one embodiment;

[0042] Figure 7 A comparison diagram of simulated and actual shrinkage values ​​of different substrates in the first direction in one embodiment;

[0043] Figure 8A comparison diagram of simulated and actual values ​​of the expansion in the second direction of different substrates in one embodiment;

[0044] Fig. 9 A schematic diagram of deformation of a substrate in a first direction and a second direction at an early stage of evaporation and a late stage of evaporation in one embodiment;

[0045] Fig.10 is a structural block diagram of a mask tension compensation device in one embodiment;

[0046] Fig.11 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0048] The mask plate includes a plurality of mask strips arranged crosswise, which define a plurality of openings. These openings can accurately control the deposition positions of red, green and blue organic materials on the substrate to form pixel units, thereby ensuring high-quality display of the OLED (Organic Light-Emitting Diode) display panel.

[0049] In the actual process of evaporating organic materials, the mask strips and substrate in the mask plate will deform due to high temperature, such as Figure 1 As shown, in the first direction, each mask strip in the mask plate is retracted relative to the substrate, and the closer the mask strip is to the center of the mask plate, the greater the amount of retraction is, and the farther the mask strip is from the center of the mask plate, the smaller the amount of retraction is, presenting a parabolic shape; in the second direction, each mask strip in the mask plate is expanded relative to the substrate, and the amount of expansion of the mask strip shows a trend of first increasing and then decreasing from the center of the mask plate to both sides.

[0050] When the mask strips in the mask plate are not deformed to the specified area, the openings on the mask plate will deviate from the corresponding positions on the substrate, such as Figure 2 As shown, in the first direction, the two opposite boundaries of the mask strip should be retracted to the first area, and in the second direction, the center line of the mask strip (indicated by a dotted line in the figure) should be expanded to the second area, so as not to cause deviations between the openings on the mask plate and the corresponding positions on the substrate. As a result, the mask strip severely retracts in the first direction and severely expands in the second direction, causing deviations between the openings on the mask plate and the corresponding positions on the substrate.

[0051] This problem can be solved by screen stretch compensation, which requires determining the exact screen stretch compensation amount of the mask plate so that the opening of the mask plate can still perfectly overlap with the corresponding position on the substrate during the evaporation process.

[0052] The mask plate has different supporting effects on different types of substrates (such as display screens of wearable devices, display screens of non-folding mobile phones, and display screens of folding mobile phones), and also has different supporting effects on substrates of the same type but different sizes. The better the mask plate's supporting effect on the substrate, the less the substrate shrinks in the first direction and expands outward in the second direction during the evaporation process. Therefore, the amount of compensation for the mask strips in the mask plate in the first direction should be increased accordingly, and the amount of compensation for the mask strips in the mask plate in the second direction should be reduced accordingly. For example, Figure 3 As shown, the support effect of the mask plate on substrate 1 is better than that on substrate 2. The result presented during the evaporation process is that the shrinkage of substrate 1 in the first direction is less than that of substrate 2, and the expansion of substrate 1 in the second direction is less than that of substrate 2. Therefore, the compensation amount of the mask plate needs to be determined by selecting a reference substrate (also called a reference substrate).

[0053] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0054] In one embodiment, Figure 4 As shown, the present application provides a method for compensating the tension of a mask plate, which is described by taking the application of this embodiment to a computer device as an example. The method includes:

[0055] Step 401: Acquire initial position information of each mask strip of the mask plate to be compensated.

[0056] The initial position information of the mask strip may be the coordinates of the center point of the mask strip, the coordinates of the center point of the mask strip include an x ​​coordinate value and a y coordinate value, the selected x direction is the same as the second direction, and the selected y direction is the same as the first direction.

[0057] Optionally, the computer device may obtain the initial position information of each mask strip of the mask plate to be compensated by receiving the initial position information of each mask strip of the mask plate to be compensated input by a user, or may search for the initial position information of each mask strip of the mask plate to be compensated from stored mask plate model data.

[0058] Step 402, determining a first mesh compensation amount and a second mesh compensation amount according to the initial position information of each mask strip, the first mesh compensation amount includes the mesh compensation amount of each mask strip in a first direction, the second mesh compensation amount includes the mesh compensation amount of each mask strip in a second direction, and the first direction is orthogonal to the second direction.

[0059] The net tension compensation refers to the extra space or adjustment amount reserved on the mask plate in consideration of the size change of the mask plate due to temperature change, material expansion and other factors during the evaporation process. The first direction can be the width direction of the mask plate ( Figure 1-Figure 3 The second direction may be the vertical direction of the mask plate ( Figure 1-Figure 3 The horizontal direction in the image, the x direction).

[0060] Optionally, the computer device may obtain a first mapping relationship and a second mapping relationship, wherein the first mapping relationship is used to characterize the correspondence between the initial position information of each mask strip and the net stretching compensation amount of each mask strip in the first direction; and the second mapping relationship is used to characterize the correspondence between the initial position information of each mask strip and the net stretching compensation amount of each mask strip in the second direction. Then, the computer device may obtain the first net stretching compensation amount according to the initial position information of each mask strip and the first mapping relationship; and the computer device may obtain the second net stretching compensation amount according to the initial position information of each mask strip and the second mapping relationship.

[0061] Step 403 , when the mask plate to be compensated is stretched, a stretching compensation process is performed on the mask plate to be compensated according to the first mesh compensation amount and the second mesh compensation amount.

[0062] Among them, the stretch compensation processing is the position compensation processing. For example, if the stretch compensation amount of the mask strip in the first direction is +1μm, then 1μm needs to be added to the coordinates of the mask strip in the first direction; if the second stretch compensation amount of the mask strip in the second direction is +1μm, then 1μm needs to be subtracted from the coordinates of the mask strip in the second direction.

[0063] It should be noted that the mask plate in this application refers to a fine metal mask (Fine Metal Mask, FMM).

[0064] In this embodiment, the initial position information of each mask strip of the mask plate to be compensated is obtained; the first net stretching compensation amount and the second net stretching compensation amount are determined according to the initial position information of each mask strip, the first net stretching compensation amount includes the net stretching compensation amount of each mask strip in the first direction, and the second net stretching compensation amount includes the net stretching compensation amount of each mask strip in the second direction, and the first direction is orthogonal to the second direction. Then, when the mask plate to be compensated is stretched, the net stretching compensation processing is performed according to the first net stretching compensation amount and the second net stretching compensation amount, so that the net stretching compensation of the mask plate is realized.

[0065] In one embodiment, if Figure 5 As shown, another method for compensating the stretching of a mask plate is provided, wherein a first stretching compensation amount and a second stretching compensation amount are determined according to initial position information of each mask strip, including steps 501 to 504, wherein:

[0066] Step 501 , simulating and processing the processes of vapor deposition of a mask plate to be compensated on a plurality of different substrates respectively to obtain a plurality of simulation results.

[0067] Among them, the multiple different substrates include a reference substrate and multiple comparison substrates. The reference substrate and the comparison substrate can both be glass substrates. A mass-produced glass product can be selected as the reference substrate. The comparison substrate is different from the reference substrate in type or size.

[0068] Optionally, step 501 includes the following steps 5011 to 5013, wherein:

[0069] Step 5011, simulate the process of evaporating the compensation mask plate on multiple comparison substrates to obtain a first offset set corresponding to each mask strip and a second offset set corresponding to each mask strip, the first offset set including the first offset of the mask strip relative to each comparison substrate in the first direction; the second offset set including the second offset of the mask strip relative to each comparison substrate in the second direction.

[0070] Optionally, for each comparison substrate, a simulation is performed on the process of evaporating the compensation mask plate on the comparison substrate to obtain a first offset of each mask strip relative to the comparison substrate in a first direction and a second offset of each mask strip relative to the comparison substrate in a second direction; for each mask strip, the first offset of the mask strip relative to each comparison substrate constitutes a first offset set corresponding to the mask strip, and the second offset of the mask strip relative to each comparison substrate constitutes a second offset set corresponding to the mask strip.

[0071] Among them, the mask strip includes a first mask boundary, a second mask boundary, a third mask boundary and a fourth mask boundary, the first mask boundary and the second mask boundary are opposite, the third mask boundary and the fourth mask boundary are opposite, the first mask boundary and the second mask boundary extend in the second direction, and the third mask boundary and the fourth mask boundary extend in the first direction; the comparison substrate includes a first substrate boundary, a second substrate boundary, a third substrate boundary and a fourth substrate boundary, the first substrate boundary and the second substrate boundary are opposite, the third substrate boundary and the fourth substrate boundary are opposite, the first substrate boundary and the second substrate boundary extend in the second direction, and the third substrate boundary and the fourth substrate boundary extend in the first direction; the first mask boundary is close to the first substrate boundary, and the second mask boundary is close to the second substrate boundary.

[0072] The first offset of the mask strip relative to the comparison substrate in the first direction is the above-mentioned shrinkage amount, which is calculated as follows: in the xy coordinate system, according to the x-coordinate value in the initial position information of the mask strip, the y-coordinate value of the first mask boundary of the simulated mask strip is obtained, and the y-coordinate value of the first substrate boundary corresponding to the x-coordinate value is obtained, and the difference between the y-coordinate value of the first mask boundary and the y-coordinate value of the first substrate boundary is taken as the first offset.

[0073] The second offset of the mask strip relative to the comparison substrate in the second direction is the above-mentioned outward expansion amount, which is calculated as follows: in the xy coordinate system, obtain the center line of the simulated mask strip, determine the x' coordinate value on the center line corresponding to the y coordinate value according to the y coordinate value in the initial position information of the mask strip, and obtain the first coordinate point (x', y) on the center line, and use the distance from the first coordinate point (x', y) to the connecting line as the second offset, where the connecting line is the line connecting the midpoint of the first mask boundary and the midpoint of the second mask boundary.

[0074] Step 5012, simulating the process of evaporating the compensation mask plate on the reference substrate to obtain a first reference offset corresponding to each mask strip and a second reference offset corresponding to each mask strip; the first reference offset is the offset of the mask strip relative to the reference substrate in the first direction; the second reference offset is the offset of the mask strip relative to the reference substrate in the second direction.

[0075] The first reference offset is the amount of inward contraction of the mask strip relative to the reference substrate in the first direction, and the second reference offset is the amount of outward expansion of the mask strip relative to the reference substrate in the second direction.

[0076] The calculation method of the first reference offset can refer to the calculation method of the first offset of the mask strip relative to the comparison substrate in the first direction, and the calculation method of the second reference offset can refer to the calculation method of the second offset of the mask strip relative to the comparison substrate in the second direction, which will not be repeated here.

[0077] Step 5013: taking the first offset set, the second offset set, the first reference offset, and the second reference offset corresponding to each mask strip as a plurality of simulation results.

[0078] In other words, the first offset set corresponding to each mask strip, the second offset set corresponding to each mask strip, the first reference offset corresponding to each mask strip, and the second reference offset corresponding to each mask strip obtained above are all simulation results.

[0079] Step 502: determining a first mapping relationship according to a plurality of simulation results, wherein the first mapping relationship is used to characterize a corresponding relationship between initial position information of each mask strip and a tension compensation amount of each mask strip in a first direction.

[0080] Optionally, for each mask strip, multiple first offsets in the first offset set corresponding to the mask strip are averaged to obtain a first target offset corresponding to the mask strip; based on the first target offset corresponding to each mask strip and the first reference offset corresponding to each mask strip, a net stretching compensation amount of each mask strip in the first direction is obtained; based on the net stretching compensation amounts of multiple mask strips in the first direction, a first mapping relationship is obtained.

[0081] The tension compensation amount of the mask strip in the first direction may be a difference between a first target offset corresponding to the mask strip and a first reference offset corresponding to the mask strip.

[0082] The first mapping relationship may be obtained by fitting the stretching compensation amounts of the plurality of mask strips in the first direction. Figure 1 It can be seen that during the evaporation process, multiple mask strips in the first direction shrink inward and are parabolic. Therefore, the first mapping relationship obtained by fitting is also a parabola, that is, it satisfies the quadratic function, and the expression can be f=ax 2 +bx+c, where f is the tension compensation amount of the mask strip with coordinate x in the first direction, and a, b and c are proportional coefficients.

[0083] Step 503: determining a second mapping relationship according to a plurality of simulation results, where the second mapping relationship is used to characterize a corresponding relationship between initial position information of each mask strip and a tension compensation amount of each mask strip in a second direction.

[0084] Optionally, for each mask strip, multiple second offsets in the second offset set corresponding to the mask strip are averaged to obtain the second target offset corresponding to the mask strip; based on the second target offset corresponding to each mask strip and the second reference offset corresponding to each mask strip, a net stretching compensation amount of each mask strip in the second direction is obtained; based on the net stretching compensation amounts of multiple mask strips in the second direction, a second mapping relationship is obtained.

[0085] The tension compensation amount of the mask strip in the second direction may be a difference between a second target offset corresponding to the mask strip and a second reference offset corresponding to the mask strip.

[0086] The second mapping relationship may be obtained by fitting the stretching compensation amounts of the plurality of mask strips in the second direction. Figure 1 It can be seen that during the evaporation process, multiple mask strips expand outward in the second direction. From the center of the mask plate to both sides, the expansion amount of the mask strips increases first and then decreases. The specific expansion amount trend diagram is shown in Figure 6As shown, it is parabolic. Therefore, in the second direction, for multiple mask strips on either side of the center position of the mask plate, the second mapping relationship obtained by fitting is also a parabola, that is, it satisfies the quadratic function, and the expression can be f'=dx 2 +ex+m, where f´ is the tension compensation of the mask strip with coordinate x in the second direction, and d, e and m are proportional coefficients.

[0087] Step 504, determining a first screen compensation amount according to the initial position information of each mask strip and the first mapping relationship; determining a second screen compensation amount according to the initial position information of each mask strip and the second mapping relationship.

[0088] In other words, after the first mapping relationship and the second mapping relationship are obtained, the stretching compensation amount of the mask strip in the first direction and the stretching compensation amount of the mask strip in the second direction can be obtained through the initial position information of the mask strip.

[0089] In this embodiment, the first mapping relationship and the second mapping relationship are obtained through a reference substrate, so that the first mesh compensation amount and the second mesh compensation amount obtained according to the first mapping relationship and the second mapping relationship are more accurate, thereby achieving precise compensation and improving the finished product yield of the display panel.

[0090] In addition, it is mentioned above that the better the support effect of the mask plate on the substrate, the less the substrate shrinks in the first direction and expands in the second direction during the evaporation process. In order to verify that the simulation of the present application also conforms to this logic, thereby ensuring that the first network compensation amount and the second network compensation amount obtained by the simulation are accurate, the present application simulates the evaporation process of the same mask plate on four different substrates and conducts real experimental tests to obtain the simulated value and actual value of the shrinkage of the substrate in the first direction, such as Figure 7 As shown, the support effect of the mask plate on the substrate 1 to the substrate 4 is getting better and better. Figure 7 It can be seen that the simulation value and the actual value in the first direction have similar trends. This application simulates and conducts real experimental tests on the evaporation process of the same mask plate on two different substrates, and obtains the simulation value and the actual value of the expansion of the substrate in the second direction, such as Figure 8 As shown, the support effect of the mask plate on the substrate 2 is better than that of the mask plate on the substrate 1. Figure 8 It can be seen that the simulation value and the actual value in the second direction also have similar trends. Therefore, the compensation amount of the first mesh and the compensation amount of the second mesh obtained in the present application are accurate.

[0091] In addition, during the evaporation process, as the evaporation process proceeds, the substrate is affected by factors such as the evaporation material, and the magnetic force will gradually weaken. In the first direction, the substrate will shrink in the later stage of evaporation relative to the earlier stage of evaporation. In the second direction, the substrate will expand outward in the later stage of evaporation relative to the earlier stage of evaporation. Fig. 9 As shown, this will cause the evaporated material to move toward the center of the substrate as a whole. Therefore, the mapping relationship needs to be corrected. The detailed correction process is described below.

[0092] In one embodiment, a first mapping relationship is obtained based on the stretching compensation amount of multiple mask strips in the first direction, including: fitting the stretching compensation amount of multiple mask strips in the first direction to obtain an initial first mapping relationship; and correcting the initial first mapping relationship to obtain the first mapping relationship.

[0093] Optionally, the initial first mapping relationship is corrected according to the first correction parameter to obtain the first mapping relationship; wherein the first correction parameter is an empirical value, which is related to at least one of the evaporation equipment and the number of wafers, and therefore, the first correction parameter can be determined according to at least one of the evaporation equipment and the number of wafers. Related to the evaporation equipment refers to the specific material evaporated by the evaporation equipment, the temperature of the material evaporated by the evaporation equipment, etc.; related to the number of wafers refers to the number of substrates evaporated in the same time period.

[0094] Depend on Fig. 9 As can be seen from the left figure in the figure, the substrate is relatively retracted in the first direction. Therefore, the initial first mapping relationship is corrected according to the first correction parameter, which can be the net compensation amount in the initial first mapping relationship minus the first correction parameter, so that the expression of the first mapping relationship is: f=ax 2 +bx+ck 1 , where k 1 is the first correction parameter.

[0095] Similarly, according to the stretching compensation amounts of the multiple mask strips in the second direction, a second mapping relationship is obtained, including: fitting the stretching compensation amounts of the multiple mask strips in the second direction to obtain an initial second mapping relationship; and correcting the initial second mapping relationship to obtain a second mapping relationship.

[0096] Optionally, the initial second mapping relationship is corrected according to a second correction parameter to obtain a second mapping relationship; wherein the second correction parameter is an empirical value and is related to at least one of the evaporation equipment and the number of wafers, and therefore, the second correction parameter can be determined based on at least one of the evaporation equipment and the number of wafers.

[0097] Depend on Fig. 9As can be seen from the right figure in the figure, the substrate is relatively expanded in the second direction. Therefore, the initial second mapping relationship is corrected according to the second correction parameter, which can be the net compensation amount in the initial second mapping relationship plus the second correction parameter, so that the expression of the second mapping relationship is: f´=dx 2 +ex+m+k 2 , where k 2 is the second correction parameter.

[0098] In this embodiment, by taking into account the process state change of the substrate during the evaporation process, the corrected first mapping relationship and the corrected second mapping relationship are made more accurate, thereby further achieving accurate compensation of the mask.

[0099] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0100] Based on the same inventive concept, the embodiment of the present application also provides a mask plate stretching compensation device for implementing the mask plate stretching compensation method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations of the embodiments of the mask plate stretching compensation device provided below can refer to the limitations of the mask plate stretching compensation method above, and will not be repeated here.

[0101] In an exemplary embodiment, Fig.10 As shown, a mask plate tension compensation device is provided, and the mask plate tension compensation device 1000 includes: an acquisition module 1001, a first determination module 1002, and a second determination module 1003, wherein:

[0102] The acquisition module 1001 is used to acquire the initial position information of each mask strip of the mask plate to be compensated.

[0103] The first determination module 1002 is used to determine a first mesh compensation amount and a second mesh compensation amount according to initial position information of each mask strip, wherein the first mesh compensation amount includes a mesh compensation amount of each mask strip in a first direction, and the second mesh compensation amount includes a mesh compensation amount of each mask strip in a second direction, and the first direction is orthogonal to the second direction.

[0104] The second determining module 1003 is used to perform a net stretching compensation process on the mask plate to be compensated according to the first net stretching compensation amount and the second net stretching compensation amount when the mask plate to be compensated is being stretched.

[0105] In one embodiment, the first determination module 1002 is specifically used to simulate the process of evaporation of the compensation mask plate on multiple different substrates, respectively, to obtain multiple simulation results; determine a first mapping relationship based on the multiple simulation results, the first mapping relationship is used to characterize the correspondence between the initial position information of each mask strip and the net stretching compensation amount of each mask strip in the first direction; determine a second mapping relationship based on the multiple simulation results, the second mapping relationship is used to characterize the correspondence between the initial position information of each mask strip and the net stretching compensation amount of each mask strip in the second direction; determine the first net stretching compensation amount based on the initial position information of each mask strip and the first mapping relationship; determine the second net stretching compensation amount based on the initial position information of each mask strip and the second mapping relationship.

[0106] In one embodiment, the multiple different substrates include a reference substrate and multiple comparison substrates, and the first determination module 1002 is specifically used to simulate the process of vapor deposition of the compensation mask plate on the multiple comparison substrates to obtain a first offset set corresponding to each mask strip and a second offset set corresponding to each mask strip, the first offset set includes a first offset of the mask strip relative to each comparison substrate in a first direction; the second offset set includes a second offset of the mask strip relative to each comparison substrate in a second direction; the process of vapor deposition of the compensation mask plate on the reference substrate is simulated to obtain a first reference offset corresponding to each mask strip and a second reference offset corresponding to each mask strip; the first reference offset is the offset of the mask strip relative to the reference substrate in the first direction; the second reference offset is the offset of the mask strip relative to the reference substrate in the second direction; the first offset set, the second offset set, the first reference offset and the second reference offset corresponding to each mask strip are used as multiple simulation results.

[0107] In one embodiment, the first determination module 1002 is specifically used to perform mean processing on multiple first offsets in the first offset set corresponding to each mask strip to obtain a first target offset corresponding to the mask strip; obtain a net stretching compensation amount of each mask strip in the first direction according to the first target offset corresponding to each mask strip and the first reference offset corresponding to each mask strip; obtain a first mapping relationship according to the net stretching compensation amounts of multiple mask strips in the first direction;

[0108] Optionally, the first determination module 1002 is specifically used to perform mean processing on multiple second offsets in the second offset set corresponding to each mask strip to obtain a second target offset corresponding to the mask strip; obtain a net stretching compensation amount of each mask strip in the second direction according to the second target offset corresponding to each mask strip and the second reference offset corresponding to each mask strip; and obtain a second mapping relationship according to the net stretching compensation amounts of multiple mask strips in the second direction.

[0109] In one embodiment, the first determination module 1002 is specifically used to perform fitting processing on the tension compensation amounts of the plurality of mask strips in the first direction to obtain an initial first mapping relationship; and to correct the initial first mapping relationship to obtain a first mapping relationship;

[0110] Optionally, the first determining module 1002 is specifically configured to correct the initial first mapping relationship according to a first correction parameter to obtain the first mapping relationship;

[0111] Optionally, the first correction parameter is determined according to at least one of an evaporation device and a number of wafers.

[0112] In one embodiment, the first determination module 1002 is specifically used to perform fitting processing on the tension compensation amounts of the plurality of mask strips in the second direction to obtain an initial second mapping relationship; and to correct the initial second mapping relationship to obtain a second mapping relationship;

[0113] Optionally, the first determining module 1002 is specifically configured to correct the initial second mapping relationship according to a second correction parameter to obtain the second mapping relationship;

[0114] Optionally, the second correction parameter is determined according to at least one of an evaporation device and a number of wafers.

[0115] Each module in the above-mentioned mask plate tension compensation device can be implemented in whole or in part by software, hardware and their combination. Each of the above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the corresponding operations of each of the above modules.

[0116] In an exemplary embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as shown in FIG. Fig.11 As shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. The processor, the memory and the input / output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner can be realized through WIFI, a mobile cellular network, near field communication (NFC) or other technologies. When the computer program is executed by the processor, a method for compensating the network of a mask plate is realized. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0117] Those skilled in the art will understand that Fig.11 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0118] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the steps of the method described in the above method embodiment are implemented.

[0119] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of the method described in the above method embodiment are implemented.

[0120] In one embodiment, a computer program product is provided, including a computer program, which implements the steps of the method described in the above method embodiment when executed by a processor.

[0121] A person of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, an artificial intelligence (AI) processor, etc., but are not limited to this.

[0122] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0123] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for compensating a mask plate, characterized in that: The method comprises: Obtaining initial position information of each mask strip of the mask plate to be compensated; Determine a first net compensation amount and a second net compensation amount according to the initial position information of each mask strip, wherein the first net compensation amount includes a net compensation amount of each mask strip in a first direction, and the second net compensation amount includes a net compensation amount of each mask strip in a second direction, and the first direction is orthogonal to the second direction; When the mask plate to be compensated is stretched, a stretching compensation process is performed on the mask plate to be compensated according to the first mesh compensation amount and the second mesh compensation amount.

2. The method according to claim 1, characterized in that The determining of the first net compensation amount and the second net compensation amount according to the initial position information of each mask strip comprises: Simulating and processing the process of evaporating the compensation mask plate on multiple different substrates respectively to obtain multiple simulation results; Determine a first mapping relationship according to the plurality of simulation results, wherein the first mapping relationship is used to characterize a corresponding relationship between initial position information of each of the mask strips and a tension compensation amount of each of the mask strips in the first direction; Determine a second mapping relationship according to the plurality of simulation results, wherein the second mapping relationship is used to characterize a corresponding relationship between initial position information of each of the mask strips and a net stretching compensation amount of each of the mask strips in a second direction; The compensation amount of the first net is determined according to the initial position information of each mask strip and the first mapping relationship; and the compensation amount of the second net is determined according to the initial position information of each mask strip and the second mapping relationship.

3. The method according to claim 2, characterized in that The multiple different substrates include a reference substrate and multiple comparison substrates. The processes of vapor deposition of the mask plate to be compensated on the multiple different substrates are simulated respectively to obtain multiple simulation results, including: A simulation process is performed on the process of evaporation of the mask plate to be compensated on the plurality of the comparison substrates to obtain a first offset set corresponding to each of the mask strips and a second offset set corresponding to each of the mask strips, wherein the first offset set includes a first offset of the mask strip relative to each of the comparison substrates in the first direction; and the second offset set includes a second offset of the mask strip relative to each of the comparison substrates in the second direction; The process of evaporating the mask plate to be compensated on the reference substrate is simulated to obtain a first reference offset corresponding to each mask strip and a second reference offset corresponding to each mask strip; the first reference offset is an offset of the mask strip relative to the reference substrate in the first direction; the second reference offset is an offset of the mask strip relative to the reference substrate in the second direction; The first offset set, the second offset set, the first reference offset, and the second reference offset corresponding to each of the mask strips are used as the multiple simulation results.

4. The method according to claim 3, characterized in that The determining of the first mapping relationship according to the plurality of simulation results comprises: For each of the mask strips, performing mean processing on a plurality of the first offsets in the first offset set corresponding to the mask strip to obtain a first target offset corresponding to the mask strip; Obtaining a net stretching compensation amount of each mask strip in the first direction according to the first target offset amount corresponding to each mask strip and the first reference offset amount corresponding to each mask strip; Obtaining the first mapping relationship according to the stretching compensation amounts of the plurality of mask strips in the first direction; Optionally, determining the second mapping relationship according to the multiple simulation results includes: For each of the mask strips, performing mean processing on a plurality of the second offsets in the second offset set corresponding to the mask strip to obtain a second target offset corresponding to the mask strip; Obtaining a net stretching compensation amount of each mask strip in the second direction according to the second target offset amount corresponding to each mask strip and the second reference offset amount corresponding to each mask strip; The second mapping relationship is obtained according to the stretching compensation amounts of the plurality of mask strips in the second direction.

5. The method according to claim 4, characterized in that The obtaining of the first mapping relationship according to the net stretching compensation amounts of the plurality of mask strips in the first direction comprises: performing fitting processing on the net stretching compensation amounts of the plurality of mask strips in the first direction to obtain an initial first mapping relationship; and correcting the initial first mapping relationship to obtain the first mapping relationship; Optionally, correcting the initial first mapping relationship to obtain the first mapping relationship includes: correcting the initial first mapping relationship according to a first correction parameter to obtain the first mapping relationship; Optionally, the first correction parameter is determined according to at least one of an evaporation device and a number of wafers; Optionally, obtaining the second mapping relationship according to the net stretching compensation amounts of the plurality of mask strips in the second direction includes: performing fitting processing on the net stretching compensation amounts of the plurality of mask strips in the second direction to obtain an initial second mapping relationship; and correcting the initial second mapping relationship to obtain the second mapping relationship; Optionally, correcting the initial second mapping relationship to obtain the second mapping relationship includes: correcting the initial second mapping relationship according to a second correction parameter to obtain the second mapping relationship; Optionally, the second correction parameter is determined according to at least one of an evaporation device and a number of wafers.

6. A mask plate tension compensation device, characterized in that: The device comprises: An acquisition module, used for acquiring initial position information of each mask strip of the mask plate to be compensated; A first determining module, configured to determine a first net compensation amount and a second net compensation amount according to initial position information of each mask strip, wherein the first net compensation amount includes a net compensation amount of each mask strip in a first direction, and the second net compensation amount includes a net compensation amount of each mask strip in a second direction, wherein the first direction is orthogonal to the second direction; The second determining module is used to perform a net stretching compensation process on the mask plate to be compensated according to the first net stretching compensation amount and the second net stretching compensation amount when the mask plate to be compensated is being stretched.

7. A display panel, characterized in that: The display panel is obtained by performing evaporation of a stretched mask using the mask stretching compensation method described in any one of claims 1 to 5.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 5 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 5 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 5 are implemented.

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