Deposition ring, deposition assembly and deposition equipment capable of improving deposition uniformity of thick film

Abstract

The invention provides a deposition ring, a deposition assembly and deposition equipment capable of improving deposition uniformity of a thick film. The deposition ring comprises a central part, an inner circular ring and an outer circular ring which are concentrically arranged at intervals in sequence from inside to outside; the inner circular ring is connected with the center part through a plurality of first supporting rods arranged at intervals and connected with the outer circular ring through a plurality of second supporting rods arranged at intervals. The deposition ring further comprises a plurality of connecting rods arranged at intervals, one ends of the multiple connecting rods are connected with the outer circular ring, and the other ends of the multiple connecting rods extend in the direction away from the deposition ring and are used for slidably connecting the deposition ring with an external structure. By means of the optimized structural design, when the deposition ring is used for thin film deposition equipment, the thin film deposition uniformity can be remarkably improved, heat distribution on the surface of a wafer can be improved, and surface defects such as whiskers can be reduced. By adopting the deposition equipment with the deposition ring, the film deposition uniformity can be improved under the condition that process steps are not increased, the yield of the equipment is favorably improved, and the production cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit manufacturing equipment, and in particular to a deposition ring, a deposition component and a deposition equipment capable of improving the uniformity of thick film deposition. Background Art

[0002] Aluminum film is a widely used film in semiconductor chip manufacturing, and is often used in functional layers such as metal gates, conductive interconnect layers, and electrode material layers. In the prior art, when using physical vapor deposition and other types of equipment to deposit thick aluminum films (for example, aluminum films with a thickness greater than 10KÅ), the undesirable phenomenon that the thickness in the middle of the film is greater than the thickness at the edge often occurs, and this phenomenon becomes more obvious as the thickness of the film increases. Uneven thick aluminum films are used in semiconductor radio frequency (RF) and power devices, which will affect the uniformity of the square resistance of the aluminum film and cause degradation of the electrical performance of the product. In order to improve the uniformity of thick film deposition, a more commonly used method is to deposit the film to a thickness greater than the target thickness and then grind and thin it, but this will lead to a decrease in equipment yield and an increase in production costs, and the increase in process steps is accompanied by an increase in the risk of process defects.

[0003] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a deposition ring, a deposition assembly and a deposition device that can improve the uniformity of thick film deposition, so as to solve the problem in the prior art that when using physical vapor deposition and other types of equipment to deposit thick films, the undesirable phenomenon that the thickness in the middle of the film is greater than the thickness at the edge is easily occurred, affecting the performance of the device.

[0005] To achieve the above-mentioned purpose and other related purposes, the present invention provides a deposition ring capable of improving the uniformity of thick film deposition, wherein the deposition ring comprises, from the inside to the outside, a central portion, an inner ring and an outer ring which are sequentially spaced and concentrically arranged; the inner ring is connected to the central portion via a plurality of spaced-apart first support rods, and is connected to the outer ring via a plurality of spaced-apart second support rods; the deposition ring further comprises a plurality of spaced-apart connecting rods, one end of the plurality of connecting rods being connected to the outer ring, and the other end extending in a direction away from the deposition ring, for slidably connecting the deposition ring to an external structure.

[0006] Optionally, the number of the first support rods and the number of the second support rods are the same, and they are arranged in a one-to-one correspondence along the radial direction of the deposition ring.

[0007] Optionally, there are six first support rods and six second support rods, each of which is evenly spaced and distributed along the circumference of the deposition ring.

[0008] Optionally, screw holes are provided at the connection between the outer ring and part of the second support rods, and the connecting rods are threadedly embedded in the screw holes one by one.

[0009] Optionally, the size of the screw hole near the hole opening is larger than the size of the connecting rod, so that there is a gap between the connecting rod and the screw hole.

[0010] Optionally, a plurality of stress release holes are provided at the connection between the outer ring and part of the second support rods, and the stress release holes and the screw holes are alternately arranged on the outer ring.

[0011] Optionally, each connection where the stress release holes are provided has two stress release holes, the two stress release holes are symmetrically distributed with respect to the central axis of the second support rod, and the hole diameter of the stress release holes is 3 mm-7 mm.

[0012] The present invention also provides a deposition assembly, which includes a support ring, an insulating isolation sleeve and a deposition ring as described in any of the above schemes, wherein one end of the connecting rod of the deposition ring that is away from the deposition ring is slidably mounted on the support ring through the insulating isolation sleeve and extends to the outside of the support ring, and the outer ring and the support ring are spaced radially.

[0013] The present invention also provides a deposition device capable of improving the uniformity of thick film deposition, wherein the deposition device comprises a deposition component as described in any of the above schemes.

[0014] Optionally, the deposition equipment is a physical vapor deposition equipment for aluminum film deposition, the material of the support ring includes stainless steel, the material of the deposition ring includes several of aluminum, stainless steel and titanium, and the material of the insulating isolation sleeve includes ceramic.

[0015] As described above, the deposition ring, deposition assembly, and deposition equipment provided by the present invention that can improve the uniformity of thick film deposition have the following beneficial effects: the deposition ring of the present invention has an optimized structural design. When used in thin film deposition equipment, it can reduce the thin film deposition at the center of the wafer by minimizing the horizontal surface area of ​​the inner ring, the outer ring, and the support rod and appropriately increasing the surface area of ​​the center. It can effectively improve the problem of thicker film thickness in the center area of ​​the wafer than in the edge area during thick film deposition, and can significantly improve the uniformity of thin film deposition, help improve the heat distribution on the wafer surface, and reduce surface defects such as whiskers. At the same time, the use of the deposition ring and deposition assembly of the present invention can significantly reduce the thermal stress deformation caused by the thermal expansion of the deposition ring during the process. The deposition equipment using the deposition ring of the present invention can improve the uniformity of thin film deposition without increasing the process steps, which helps to improve the output rate of the equipment and reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The diagram shows a top view of the deposition ring provided by the present invention that can improve the uniformity of thick film deposition.

[0017] Figure 2 Display as Figure 1 A magnified schematic diagram of area A.

[0018] Figure 3 Display as Figure 1 An enlarged schematic diagram of area B.

[0019] Figure 4 Shown is a schematic diagram of the structure of the connecting rod of the deposition ring in one example.

[0020] Figure 5 It is a schematic diagram showing the positional relationship between the deposition ring and the support ring of the present invention when in use.

[0021] Figure 6 Display as Figure 5 Schematic diagram of the local cross-sectional structure along the CC line.

[0022] Figure 7 Display as Figure 6 An enlarged schematic diagram of the D region.

[0023] Figure 8 It is a schematic diagram showing an exemplary cross-sectional structure of the insulating isolation sleeve of the present invention.

[0024] Fig. 9 It is a schematic diagram showing the deformation direction of the deposition ring provided by the present invention after being subjected to heat load during the process. DETAILED DESCRIPTION

[0025] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0026] It should be noted that the diagrams provided in this embodiment are only schematic illustrations of the basic concept of the present invention, and the diagrams only show the components related to the present invention rather than the number, shape and size of the components in actual implementation. The type, quantity and proportion of each component in actual implementation may be changed at will, and the layout of the components may also be more complicated. In order to make the diagrams as concise as possible, not all structures are marked in the drawings.

[0027] The deposition rings used in existing vapor deposition equipment are generally set above the circumferential edge of the wafer to prevent thin film deposition on the edge of the wafer. After long-term research, the inventor of this case proposed a deposition ring with a completely new structure, which not only has the function of preventing thin film deposition on the edge of the wafer, but also can improve the problem of excessively thick deposition in the center of the wafer, meeting more diverse deposition needs.

[0028] Specifically, the present invention provides a deposition ring 1 that can improve the uniformity of thick film deposition. The deposition ring 1 is used in a deposition device, and is particularly suitable for a device for depositing a relatively thick film, for example, it is particularly suitable for depositing a film with a thickness greater than 10 kiloangstroms. The device can be a physical vapor deposition device or a chemical vapor deposition device, for example, the deposition ring 1 provided by the present invention can be used in a physical vapor deposition device for aluminum film deposition.

[0029] The structure of the deposition ring 1 can be referred to Figures 1 to 4As shown, it includes, from the inside to the outside, a central portion 11, an inner ring 12 and an outer ring 13 that are sequentially spaced and concentrically arranged. As the name implies, the inner ring 12 and the outer ring 13 are both annular structures, and the central portion 11 can be annular or a solid disc, preferably a solid disc. The inner ring 12 is connected to the central portion 11 through a plurality of first support rods 18 that are spaced apart, and is connected to the outer ring 13 through a plurality of second support rods 19 that are spaced apart. That is, a plurality of first support rods 18 are spaced apart on the same circumferential surface of the inner ring 12, one end of which is connected to the central portion 11, and the other end of which is connected to the inner ring 12, thereby dividing the area between the inner ring 12 and the central portion 11 into a plurality of inner deposition areas 1a. A plurality of second support rods 19 are distributed at intervals on the same circumferential surface of the outer ring 13, one end of which is connected to the inner ring 12, and the other end of which is connected to the outer ring 13, thereby dividing the area between the inner ring 12 and the outer ring 13 into a plurality of outer deposition areas 1b. The specific number of the first support rod 18 and the second support rod 19 is not limited, but preferably more than 3, and the first support rod 18 and the second support rod 19 are preferably evenly distributed on the corresponding circumferential surface to provide uniform support force. Each support rod (including the first support rod 18 and the second support rod 19) can be fixedly connected or detachably connected to the corresponding structure. For example, in some examples, the two ends of each support rod are fixedly connected to the adjacent structure by welding. In other examples, the two ends of each support rod are detachably connected to the adjacent structure by threaded connection, snap-on connection, threaded connection, etc. If a detachable connection is adopted, the position of the support rod can be adjusted as needed to adjust the size of different deposition areas. In most cases, the thickness of the thin film deposited in the same circumferential direction on the wafer surface is required to be the same. Therefore, the smaller the surface area, the better, while ensuring that the support rod can provide sufficient support force, in order to avoid obstruction as much as possible. However, in some special cases, such as in the experimental research and development stage, different areas of the wafer surface may be used to deposit thin films of different types and / or different thicknesses, and it is hoped that the interference between adjacent areas is as small as possible. In this case, at least part of the first support rod 18 and / or the second support rod 19 can be set to a structure with adjustable surface area size, for example, it can be set to a winding structure that is at least partially, and according to different deposition requirements (depending on the required deposition shielding area), the support rod shielding position and folding area size can be adjusted by manual winding and unwinding. Or part of the support rod can be set to a folding structure with a V-shaped groove, and the shielding area of ​​the support rod can be adjusted by adjusting the degree of folding.

[0030] In addition, in this embodiment, the deposition ring 1 also includes a plurality of spaced connecting rods 14, one end of the plurality of connecting rods 14 is connected to the outer ring 13, and the other end extends in a direction away from the deposition ring 1, and is used to slide the deposition ring 1 with the external structure. That is, when the deposition ring 1 provided in this embodiment is used, it is not fastened with other external structures, or the positional relationship with other external structures, especially the radial spacing, can be adjusted. For example, if applied to a physical vapor deposition device, the deposition ring 1 is mounted on the support ring 2 through the connecting rods 14, and the outer ring 13 of the deposition ring 1 is preferably spaced from the support ring 2. For example, in some examples, there are three connecting rods 14, and the deposition ring 1 is installed on the support ring 2 through the three connecting rods 14, and the connecting rods 14 are only placed on the support rods but not fastened to the support rods, so the connecting rods 14 do not limit the "radial" degree of freedom along the support ring 2. A plurality of connecting rods 14 are evenly distributed along the circumferential direction of the deposition ring 1, so that the relative position relationship between the deposition ring 1 and the support ring 2 is fixed. During the process, the deposition ring 1 is heated and expands radially. Therefore, setting a sliding connection helps to release the stress caused by thermal expansion. This can avoid deformation caused by the fixed connection between the deposition ring 1 and the support ring 2 after the deposition ring 1 is heated and expands during the process, ensuring a stable support connection between the process kits, helping to extend the service life of the deposition ring and improving the stability of the equipment.

[0031] When the deposition ring 1 provided in this embodiment is used in a thin film deposition device, it is usually arranged horizontally in a manner that the center portion 11 is coaxial with the center of the deposition chamber (which is also the center of the wafer to be deposited). The center portion 11, the inner ring 12 and the outer ring 13 of the deposition ring 1 can play a shielding role to reduce the sedimentation of sputtered particles corresponding to the area below these structures, and there is no shielding directly above the separated multiple inner deposition areas 1a and outer deposition areas 1b. Therefore, by minimizing the horizontal surface area of ​​the inner ring 12, the outer ring 13 and the support rod and appropriately increasing the surface area of ​​the center portion 11, the thin film deposition at the center of the wafer can be reduced. When thick films are deposited, the problem of the film thickness area in the center area of ​​the wafer being thicker than that in the edge area can be effectively improved, and the uniformity of thin film deposition can be significantly improved, which helps to improve the heat distribution on the surface of the wafer and reduce surface defects such as whiskers. The deposition ring 1 of the present invention is applied to a thin film deposition device, which can improve the uniformity of thin film deposition without increasing the process steps, improve the output rate of the equipment, and reduce the production cost. The deposition ring 1 has a simple structure, is easy to process, and is very convenient to install and use.

[0032] The number of the first support rod 18 and the second support rod 19 can be the same or different, and the position of the setting can also be flexibly adjusted. In a preferred example, the number of the two is the same, and they are arranged one-to-one along the radial direction of the deposition ring 1, that is, the first support rod 18 and the second support rod 19 are arranged along the radial direction of the deposition ring 1 in a one-to-one manner, and the first support rod 18 and the second support rod 19 can also be regarded as two sections of the same support rod located at different positions. In a further example, there are 6 first support rods 18 and second support rods 19, each of which is evenly spaced along the circumference of the deposition ring 1, thereby dividing the deposition ring 1 into 6 equal-area inner deposition areas 1a and 6 equal-area outer deposition areas 1b, and the area ratio of the two areas is a constant, for example, the area ratio of the inner deposition area 1a to the outer deposition area 1b is 1:2, but it is not limited to this. During the deposition process, the inner deposition area 1a and the outer deposition area 1b correspond to different areas on the wafer surface. If it is used to deposit a stress-improving film (for example, for depositing a silicon nitride or silicon oxide film on the back of a wafer to improve the warpage of the wafer), the warpage distribution of the surface of the wafer to be deposited can be measured in advance before use, and the position of each support rod of the deposition ring 1 and / or the size of the structure such as the center part 11 can be adjusted according to the warpage of the wafer to adjust the size of each deposition area, which helps to further improve the warpage of the wafer surface.

[0033] If applied to conventional thin film deposition processes, it is desirable that the horizontal surface areas of the inner ring 12, the outer ring 13, the first support rod 18, and the second support rod 19 be as small as possible to reduce the shielding area. For example, in some examples, these structures can be solid or hollow round rods with the same diameter, and the wall thickness is, for example, 5 mm, but not limited thereto. The diameter of the center portion 11 is determined as required, for example, 20 mm, but not limited thereto.

[0034] The deposition ring 1 can be prepared by machining, and the materials of its various parts are preferably consistent so that each part has the same thermal expansion coefficient. The deposition ring 1 is preferably made of metal, such as one of stainless steel, aluminum, titanium, aluminum alloy, titanium alloy, or a combination of multiple materials, without specific limitation. The surface of the deposition ring 1 can be anodized to reduce its own corrosion and increase the adsorption of blocked particles. When applied to sputtering deposition, the surface of the deposition ring 1 can also present different electrical properties as needed during use to produce different degrees of adsorption for different sputtering particles. The various parts of the deposition ring are preferably located in the same plane during the deposition process.

[0035] The size of the central portion 11 may be fixed. In other examples, the area of ​​the central portion 11 may be adjusted according to the deposition requirements, and accordingly, each structure connected to the central portion 11 has a structure that adapts to the change in the area of ​​the central portion 11. For example, in some examples, the central portion 11 has a pleated structure that can be stretched radially or a folded structure that can be bent upward or downward, and the first support rod 18 may also be provided with a pleated structure that can be stretched radially. Therefore, when necessary, the degree of wrinkling of the central portion 11 and the first support rod 18 can be manually adjusted to adjust the surface area of ​​the central portion 11 to meet different deposition requirements. In other examples, the adjustment of the shielding area of ​​the central portion 11 can also be achieved with the help of an external driving force, thereby achieving real-time dynamic adjustment of the central shielding area during the deposition process. For example, the central portion 11 and the first support rod 18 can be made of electrostrictive materials, and the surface area of ​​the central portion 11 is adjusted by current changes. In other examples, the central portion 11 and the first support rod 18 can also be made of thermostrictive materials, and the temperature is adjusted within the process allowable range to adjust the surface area of ​​the central portion 11. Similarly, the inner ring 12, the outer ring 13 and the second support rod 19 can also adopt a similar solution, that is, a retractable pleated structure can be adopted, or electrostrictive or thermostrictive materials can be used to adjust the size and position of each structure, so as to meet more diverse deposition requirements. For example, the surface area of ​​the outer ring can be adjusted according to the size of the wafer edge area to meet different edge deposition requirements.

[0036] The connecting rod 14 and the outer ring 13 can be fixedly connected, for example, welded together, but preferably can be detachably connected, and the connection position between the connecting rod 14 and the outer ring 13 is not strictly limited. Figure 2As shown, the connection between the outer ring 13 and part of the second support rod 19 is provided with a screw hole 15, and the connecting rod 14 is threadedly embedded in the screw hole 15 one by one. The threaded connection can more flexibly adjust the extension length of the connecting rod 14, so as to more flexibly adjust the interval between the outer ring 13 and the external support structure. The connecting rod 14 is correspondingly arranged at the connection between the second support rod 19 and the outer ring 13, which can simplify the structure of the deposition ring 1 while ensuring that it has good mechanical strength. In a further example, the size of the screw hole 15 near the orifice is larger than the size of the connecting rod 14, so that there is a gap between the connecting rod 14 and the screw hole 15. For ease of understanding, the hole section of the screw hole 15 near the orifice that is larger than the size of the connecting rod 14 is defined as the anti-adhesion hole 16, and the end of the anti-adhesion hole 16 away from the orifice is the screw hole 15 threadedly connected to the connecting rod 14. Since the diameter of the anti-adhesion hole 16 is larger than the size of the connecting rod 14, when the connecting rod 14 is threadedly embedded in the screw hole 15, there is a gap between the connecting rod 14 and the anti-adhesion hole 16, and the gap is, for example, 0.5 mm. This not only helps to reduce the friction between the connecting rod 14 and the outer ring 13 at the hole opening, but also can effectively avoid the adhesion between the connecting rod 14 and the deposition ring 1.

[0037] In one example, if Figure 3As shown, the connection between the outer ring 13 and part of the second support rods 19 is provided with a plurality of stress release holes 17, and the stress release holes 17 and the screw holes 15 are preferably arranged alternately on the outer ring 13. Taking the second support rods 19 as an example, there are 6, and the connection between 3 second support rods 19 and the outer ring 13 is provided with screw holes 15, and the connection between the other 3 second support rods 19 and the outer ring 13 is not provided with screw holes 15 but with stress release holes 17. That is, not every position where the second support rod 19 is connected to the outer ring 13 is provided with a stress release hole 17 to ensure the mechanical strength of the outer ring 13 itself. In order to facilitate the installation of the screw holes 15 and the stress release holes 17, the connection between the outer ring 13 and the second support rods 19 can be provided with arc-shaped connecting blocks accordingly, so that the outer rings 13 at these corresponding connection positions have a relatively larger surface area than the outer rings 13 at other positions, and one of the arc-shaped connecting blocks can also block the deposition of the wafer notch position. The stress release holes 17 at various locations may be single or multiple. For example, in the present embodiment, there are two stress release holes 17 at each connection where the stress release holes 17 are provided. The stress release holes 17 may be through holes or blind holes, and their lengths extend along the radial direction of the deposition ring 1. The two stress release holes 17 are symmetrically distributed about the central axis of the second support rod 19, so that the stress release is more uniform. The aperture of the stress release hole 17 is preferably 3mm-7mm, for example, 5.2mm as shown in the figure. The provision of the stress release hole 17 can weaken the connection strength at the corresponding position, and elastic deformation can be maintained here when it expands due to heat, thereby reducing the plastic deformation caused by the deposition ring 1 being subjected to "thermal shock" and improving its installation stability.

[0038] When the anti-adhesion holes 16 are provided, the connecting rod 14 can be a structure with the same size at all locations, or can be a structure with the same size as the connecting rod 14. Figure 4 As shown, the structure has a variable diameter, that is, the portion of the connecting rod 14 located in the anti-adhesion hole has a larger size than the portion threadedly sleeved with the screw hole 15, so as to better mount the deposition ring 1 on the external support structure.

[0039] Combine the following Figures 5 to 9 To further illustrate the installation method and working principle of the deposition ring 1 provided in this embodiment when applied to a physical vapor deposition device.

[0040] The existing physical vapor deposition equipment is provided with a support ring 2, which is a generally cylindrical structure with openings at the top and bottom. The upper end of the support ring 2 can be fixed on the deposition chamber, and the lower end extends to the periphery of the wafer, and the lower end is provided with a step portion for supporting other structures. The deposition ring 1 provided in this embodiment is set on the step of the bottom surface of the support ring 2 through the connecting rod 14 and extends to the outside of the support ring 2 (the side close to the chamber wall). The support ring 2 is usually made of metal materials such as stainless steel and aluminum alloy, and the deposition ring 1 is also made of conductive metal materials such as aluminum and titanium. Therefore, in order to ensure that the support ring 2 and the deposition ring 1 are insulated from each other to prevent arc generation, one way is to plate the contacting parts of the two with insulating materials such as ceramics, and another way is to set an insulating isolation sleeve 3 between the support ring 2 and the connecting rod 14 as shown in this embodiment, and the insulating isolation sleeve 3 is, for example, a ceramic sleeve. The insulating isolation sleeve 3 is arranged on the support ring 2 and extends outward, and the end of the connecting rod 14 away from the deposition ring 1 is placed in the hole of the insulating isolation sleeve 3 and extends outward to the outside of the support ring 2. Therefore, the end of the connecting rod 14 away from the deposition ring 1 is free, and it is not fixed to the insulating spacer 3 and the support ring 2, and will not limit the radial freedom of the support ring 2, and can move along the axial direction of the insulating spacer 3. Therefore, when the deposition ring 1 changes its radial length due to collision caused by heat during the deposition process, the connecting rod 14 will move along the axial direction of the insulating spacer 3. Fig. 9 Move in the direction shown to ensure that the deposition ring 1 is still stably mounted on the support ring 2. Since the deposition ring 1 is provided with a stress release hole 17, it will not be severely deformed when it undergoes thermal expansion, and has a good ability to recover deformation after being cooled, which can significantly extend the service life of the deposition ring 1 and help reduce the use cost of the equipment. In addition, in the present embodiment, when the deposition ring 1 is mounted on the support ring 2, its outer ring 13 and the support ring 2 preferably have a radial interval 4, and the interval 4 is, for example, also 0.5 mm. Providing a gap between the two not only helps to prevent adhesion between the support ring 2 and the deposition ring 1, but also avoids contact friction when the two are heated and expanded, thereby extending the service life of spare parts. The deposition ring provided in the present embodiment can be used in various deposition equipment, and is particularly suitable for sputtering deposition equipment, and its central portion can effectively block sputtering particles, thereby preventing the film deposition in the central area of ​​the wafer from being too thick.

[0041] The present invention also provides a deposition assembly, the structure of which can refer to Figures 5 to 9As shown, it includes a support ring 2, an insulating isolation sleeve 3 and a deposition ring 1 as described in any of the above schemes, the end of the connecting rod 14 of the deposition ring 1 facing away from the deposition ring 1 is slidably mounted on the support ring 2 through the insulating isolation sleeve 3, and extends to the outside of the support ring 2, and the outer ring 13 of the deposition ring 1 and the support ring 2 are preferably spaced 4 in the radial direction. The description of the deposition ring and the deposition assembly can refer to the above content, and will not be repeated for the purpose of brevity. The material of each structure of the deposition assembly depends on its specific application. For example, if it is used for aluminum film deposition, the material of the support ring 2 can be stainless steel, the material of the deposition ring 1 can be several kinds of aluminum, stainless steel and titanium, the material of the insulating isolation sleeve 3 can be ceramic, and the surface of each structure of the deposition assembly can be treated with corrosion protection, such as coating with ceramic and other anti-corrosion coatings.

[0042] The deposition assembly provided by the present invention can be used in chemical vapor deposition or physical vapor deposition equipment, and is particularly suitable for sputtering deposition equipment. In the deposition process of the physical vapor deposition equipment using the deposition assembly provided by the present invention, the central portion 11 of the deposition ring 1 corresponds to being located above the central area of ​​the wafer, which can reduce the deposition of sputtered particles in this area, avoid excessively thick film deposition in the central area of ​​the wafer, and help improve the uniformity of film deposition. The thicker the film to be deposited, the more prominent the advantage of using the deposition assembly of the present invention. Depending on the structure of the deposition ring 1, the surface area of ​​the central portion 11 or other parts can also be adjusted in different deposition processes or at different stages of the same deposition process, so as to more flexibly adjust the shielding range and meet more diverse deposition requirements. Except that the structure of the deposition ring is quite different from that of the deposition ring in the prior art, the other structures of the deposition assembly provided in this embodiment and the use of the deposition assembly are basically the same as those in the prior art. For example, if it is applied to a sputtering device, the deposition assembly is arranged in the deposition space of the sputtering target and the base supporting the wafer, but in this embodiment, the deposition ring has an outer ring corresponding to the edge of the wafer, and its center is also corresponding to the center of the wafer (also directly below the sputtering target), and together with the inner ring, the outer ring, the first support rod and the second support rod, multiple inner deposition areas and outer deposition areas are formed. If it is used for chemical vapor deposition equipment, the deposition ring is correspondingly located below the spray device.

[0043] The structure of the insulating isolation sleeve 3 of the deposition assembly can be referred to Figure 8 As shown, there is a through hole 31 for the connecting rod 14 to pass through, and the through hole 31 can be made into a variable diameter hole in accordance with the structure of the connecting rod 14. To facilitate loading and unloading, the end of the insulating spacer 3 away from the deposition ring 1 is provided with an outer edge 32.

[0044] The present invention also provides a deposition device that can improve the uniformity of thick film deposition, and the deposition device includes a deposition assembly as described in any of the above schemes. Therefore, the foregoing content can be quoted here in its entirety, and will not be repeated for the purpose of brevity. In addition to using the deposition assembly provided by the present invention, the deposition device provided by the present invention has other structures and usage methods that are basically the same as the prior art. Since the structures and usage methods of various types of deposition equipment are well known to those skilled in the art, they will not be repeated for the purpose of brevity. By adopting the deposition device of the present invention, the uniformity of thin film deposition can be improved without adding additional process steps, and the heat distribution on the surface of the wafer can be improved, thereby reducing surface defects such as whiskers, and improving production yield and equipment output rate. And because the deposition assembly provided by the present invention is adopted, the service life of the deposition device provided by the present invention can be greatly extended, which helps to reduce the cost of equipment use.

[0045] The deposition equipment is preferably a physical vapor phase equipment, such as a physical sputtering deposition equipment for aluminum film deposition. When it is used to deposit a thin film with a thickness greater than 10KÅ, it will significantly improve the uniformity of thin film deposition and improve the electrical performance of the device.

[0046] In summary, the present invention provides a deposition ring, a deposition assembly and a deposition device that can improve the uniformity of thick film deposition. The deposition ring includes a central part, an inner ring and an outer ring that are sequentially spaced and concentrically arranged from the inside to the outside; the inner ring is connected to the central part through a plurality of first support rods arranged at intervals, and is connected to the outer ring through a plurality of second support rods arranged at intervals; the deposition ring also includes a plurality of connecting rods arranged at intervals, one end of the plurality of connecting rods is connected to the outer ring, and the other end extends in a direction away from the deposition ring, which is used to slide the deposition ring with the external structure. The deposition ring of the present invention has an optimized structural design. When used in a thin film deposition device, the thin film deposition at the center of the wafer can be reduced by minimizing the horizontal surface area of ​​the inner ring, the outer ring and the support rod and appropriately increasing the surface area of ​​the central part. When thick films are deposited, the problem of the film thickness area in the center area of ​​the wafer being thicker than that in the edge area can be effectively improved, and the uniformity of thin film deposition can be significantly improved, which helps to improve the heat distribution on the wafer surface and reduce surface defects such as whiskers. The deposition device using the deposition ring of the present invention can improve the uniformity of thin film deposition without increasing the process steps, which helps to improve the output rate of the equipment and reduce the production cost.

[0047] Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0048] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A deposition ring capable of improving uniformity of thick film deposition, characterized in that: The deposition ring includes, from the inside to the outside, a central portion, an inner ring and an outer ring which are arranged concentrically and spaced in sequence; the inner ring is connected to the central portion via a plurality of first support rods which are spaced apart, and is connected to the outer ring via a plurality of second support rods which are spaced apart; the deposition ring also includes a plurality of connecting rods which are spaced apart, one end of each connecting rod is connected to the outer ring, and the other end extends in a direction away from the deposition ring, so as to slidingly connect the deposition ring to an external structure.

2. The deposition ring according to claim 1, characterized in that: The number of the first support rods and the number of the second support rods are the same, and they are arranged in a one-to-one correspondence along the radial direction of the deposition ring.

3. The deposition ring according to claim 2, characterized in that: There are six first support rods and six second support rods, each of which is evenly spaced and distributed along the circumference of the deposition ring.

4. The deposition ring according to claim 1, characterized in that: The connection between the outer ring and part of the second support rod is provided with a screw hole, and the connecting rods are threadedly embedded in the screw holes one by one.

5. The deposition ring according to claim 4, characterized in that: The size of the screw hole near the hole opening is larger than the size of the connecting rod, so that there is a gap between the connecting rod and the screw hole.

6. The deposition ring according to claim 4, characterized in that: A plurality of stress release holes are arranged at the connection between the outer ring and part of the second support rods, and the stress release holes and the screw holes are arranged alternately on the outer ring.

7. The deposition ring according to claim 6, characterized in that: There are two stress release holes at each connection where stress release holes are provided. The two stress release holes are symmetrically distributed with respect to the central axis of the second support rod. The hole diameter of the stress release hole is 3mm-7mm.

8. A deposition assembly, characterized in that: The deposition assembly includes a support ring, an insulating isolation sleeve and a deposition ring as described in any one of claims 1 to 7, wherein one end of the connecting rod of the deposition ring is slidably mounted on the support ring through the insulating isolation sleeve and extends to the outside of the support ring, and the outer ring is spaced radially from the support ring.

9. A deposition apparatus capable of improving the uniformity of thick film deposition, characterized in that: The deposition apparatus comprises the deposition assembly of claim 8.

10. The deposition device according to claim 9, characterized in that The deposition equipment is a physical vapor deposition equipment for aluminum film deposition, the material of the support ring includes stainless steel, the material of the deposition ring includes several of aluminum, stainless steel and titanium, and the material of the insulating isolation sleeve includes ceramic.

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