Spindle lifting and rotating device used in a vapor deposition apparatus and method of use

Abstract

The application discloses a main shaft lifting and rotating device used by a gas deposition equipment and a using method, relates to the technical field of gas deposition equipment, and comprises a support, a chemical vapor deposition furnace is fixedly installed on the top surface of the support, and a furnace door is installed on the front side wall of the chemical vapor deposition furnace through a connecting piece; a lifting and rotating mechanism is arranged in the interior of the furnace door, and the lifting and rotating mechanism comprises a base, an installation groove is formed in the top surface of the base, a servo motor is fixedly installed in the interior of the installation groove, and a main shaft body is rotationally connected to the top surface of the base; through the arrangement of a detection assembly, real-time monitoring and accurate control of the mixed gas concentration in the reaction chamber are realized; the electrochemical sensor, the resistance type semiconductor sensor and the thermal conductivity type gas sensor in the detection assembly can accurately measure the concentrations of methyltrichlorosilane, hydrogen and argon respectively, and comprehensive monitoring of the gas components in the reaction chamber is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of vapor deposition equipment, in particular to a spindle lifting and rotating device used in vapor deposition equipment and a using method thereof. BACKGROUND

[0002] In the field of semiconductor manufacturing, vapor deposition technology is a crucial process means, which introduces specific raw gas into the chemical vapor deposition furnace, such as the mixed gas of methyltrichlorosilane and hydrogen argon, so that chemical reaction or physical adsorption occurs on the surface of the wafer substrate, thereby forming the required thin film material. However, during the vapor deposition process, the problem of gas flow and distribution has always been one of the key factors affecting the deposition quality and efficiency.

[0003] The spindle lifting and rotating device in the traditional vapor deposition equipment can realize the rotation and lifting of the wafer substrate, but its movement state has a significant and complex influence on the gas flow pattern in the reaction chamber. Gas flow plays a decisive role in the vapor deposition process, which is responsible for transporting raw gas from the gas supply system into the chemical vapor deposition furnace and ensuring that these gases can be uniformly and efficiently diffused to the surface of the wafer substrate. However, when the spindle lifting and rotating device is in motion, it can cause a series of complex gas flow phenomena such as vortex and turbulence, which can seriously interfere with the normal transportation and diffusion process of raw gas, leading to significant deviation in the distribution of gas in the reaction chamber. The formation of vortex and turbulence is mainly due to the shear force and centrifugal force generated by the movement of the spindle lifting and rotating device, which changes the flow direction of the gas, causing rotation and turbulence. The existence of vortex and turbulence not only reduces the transportation efficiency of raw gas, but also increases the mixing degree between gases, thereby changing the gas composition and concentration distribution in the reaction chamber. In addition, if the design and motion control of the spindle lifting and rotating device are unreasonable, it may further exacerbate the non-uniformity of gas flow. For example, if the rotation speed of the spindle is too fast or the lifting speed is unstable, it will cause stronger vortex and turbulence phenomena, which will further interfere with the transportation and diffusion process of raw gas, leading to more uneven distribution of gas in the reaction chamber. The non-uniformity of gas flow has a serious impact on the deposition quality and efficiency. First, it can cause uneven distribution of raw gas on the surface of the wafer substrate, affecting the uniformity of the deposition rate. Second, the non-uniformity of gas flow can also cause a series of complex chemical reactions and physical processes, such as local overheating and local reaction rate too fast, which will further affect the quality and performance of the thin film.

[0004] Therefore, based on the above search and combined with the prior art, a spindle lifting and rotating device used in vapor deposition equipment and a using method thereof are proposed to solve the above problems. SUMMARY

[0005] The present application aims to provide a spindle lifting and rotating device used in a vapor deposition equipment and a use method thereof to solve the problems in the background art.

[0006] To achieve the above object, the present application provides the following technical solutions.

[0007] A spindle lifting and rotating device used in a vapor deposition equipment, comprising a support, a chemical vapor deposition furnace is fixedly installed on the top surface of the support, a furnace door is installed on the front side wall of the chemical vapor deposition furnace through a connecting piece, and a lifting and rotating mechanism is arranged inside the furnace door, wherein the lifting and rotating mechanism comprises a base, an installation slot is formed in the top surface of the base, a servo motor is fixedly installed in the installation slot, and a spindle body is rotatably connected to the top surface of the base.

[0008] A detection assembly is arranged on the base, wherein the detection assembly comprises an L-shaped block, the L-shaped block is fixedly installed on the bottom surface of the base, a moving slot is formed in the side wall of the L-shaped block, a reciprocating lead screw is rotatably connected to the inner wall of the moving slot, a coupling is fixedly installed on the outer surface of the reciprocating lead screw and the spindle body, a transmission belt is arranged between the two couplings, a moving block is threadedly connected to the outer surface of the reciprocating lead screw, and the moving block slides in the moving slot.

[0009] A placing assembly is arranged on the spindle body, the placing assembly is provided with three groups, and is used for placing wafer substrates.

[0010] Preferably, the placing assembly comprises a cylinder, the cylinder is arranged on the outer surface of the spindle body, a polygonal slot is formed in the bottom surface of the cylinder, the polygonal slot has the same specification as the spindle body, a plurality of limiting holes are formed in the bottom surface of the cylinder, a plurality of limiting columns are formed in the top surface of the cylinder, an epitaxial base is fixedly installed on the outer surface of the cylinder, and a plurality of fixing slots are formed in the top surface of the epitaxial base.

[0011] Preferably, the detection assembly further comprises a protective shell two, the protective shell two is fixedly installed on the side wall of the moving block, an electrochemical sensor, a resistance type semiconductor sensor and a thermal conductivity type gas sensor are fixedly installed in the interior of the protective shell two, the sensing ends of the electrochemical sensor, the resistance type semiconductor sensor and the thermal conductivity type gas sensor extend to the outside of the protective shell two through the inner wall of the protective shell two, and the detection assembly further comprises a traction member.

[0012] Preferably, the traction member comprises: a circular magnet sleeved on the outer surface of the main shaft body, a top surface of the circular magnet is fixedly provided with three traction plates, side walls of the three traction plates are each provided with a plurality of ventilation openings, the side walls of the three traction plates are each fixedly provided with a protection shell three, interiors of the three protection shell threes are each fixedly provided with an air extractor, and side walls of the three protection shell threes are each provided with a connecting pipe.

[0013] Preferably, the traction member further comprises: three annular pipes, the three annular pipes are each mounted on the outer wall of the three cylinders through a plurality of connecting rods, bottom surfaces of the three annular pipes are each provided with a plurality of through holes, and the other ends of the three connecting pipes are connected with the three annular pipes, respectively.

[0014] Preferably, the top surface of the main shaft body is provided with a threaded groove, the upper portion of the main shaft body is provided with a limiting block, the bottom surface of the limiting block is fixedly provided with a threaded rod, and the threaded rod and the threaded groove are matched with each other.

[0015] Preferably, the connecting member comprises: two fixed plates, the two fixed plates are distributed in an up-down mode and are each fixedly mounted on the side wall of the chemical vapor deposition furnace, two rotating columns are rotatably connected between the two fixed plates, connecting plates are fixedly mounted on the outer surfaces of the two rotating columns, and the side walls of the connecting plates are connected with the front side wall of the furnace door.

[0016] Preferably, the main shaft body is in a polygonal cross-sectional shape, the bottom surface of the main shaft body is connected with the output shaft of the servo motor, a lifting disc is slidably mounted on the outer surface of the main shaft body, a sliding groove is formed in the side wall of the base, a sliding block is slidably connected in the sliding groove, a connecting block is fixedly mounted on the side wall of the sliding block, a protection shell one is fixedly mounted on the top surface of the connecting block, an electric push rod is fixedly mounted in the protection shell one, and the output end of the electric push rod is connected with the bottom surface of the lifting disc.

[0017] The application further provides a use method of the main shaft lifting and rotating device used in the vapor deposition equipment.

[0018] S1: Ensure that the support stably supports the whole device, check whether the chemical vapor deposition furnace is intact, whether the furnace door can be normally opened and closed, whether the servo motor on the base has been correctly installed and whether its working state is good, whether the main shaft body is firmly rotatably connected to the base, whether the polygonal cross-sectional shape is intact, whether the lifting disc can stably slide on the main shaft body, whether the electric push rod can drive the lifting disc to perform lifting movement through the connecting block and the sliding block, whether the L-shaped block, the moving groove, the reciprocating screw rod, the shaft coupling and the transmission belt detection assembly are correctly installed, whether the placing assembly is ready and whether the wafer substrate can be stably mounted on the main shaft body.

[0019] S2: open the furnace door using the connecting piece, place the wafer substrate into the placement assembly, place it into the polygonal slot of the cylinder, and ensure that it is stably fixed through the limiting hole and the limiting column, close the furnace door, and lock it using the connecting piece to ensure the sealing during the vapor deposition process;

[0020] S3: start the servo motor, drive the main shaft body to rotate through the shaft coupling and the transmission belt, and according to the need, use the electric push rod to drive the lifting disc to perform lifting movement through the sliding block and the connecting block, so as to adjust the position of the wafer substrate in the chemical vapor deposition furnace;

[0021] S4: start the electrochemical sensor, the resistance type semiconductor sensor and the thermal conductivity type gas sensor in the detection assembly, monitor the mixed gas concentration in the reaction chamber in real time, and according to the data fed back by the sensor, adjust the gas flow and the reaction condition during the vapor deposition process, so as to ensure the formation of uniform deposition layer on the wafer substrate;

[0022] S5: after the vapor deposition process is completed, stop the rotation of the servo motor, and use the electric push rod to lower the lifting disc to the lowest position, so as to take out the wafer substrate;

[0023] S6: open the furnace door, take out the deposited wafer substrate, clean the residues in the chemical vapor deposition furnace and the placement assembly, and prepare for the next use.

[0024] Compared with the prior art, the beneficial effects of the present application are:

[0025] 1、In the present application, by setting the lifting and rotating mechanism, the stable rotation and lifting of the wafer substrate during the chemical vapor deposition process are realized, the servo motor is used to drive the main shaft body to rotate, so that the wafer substrate can uniformly receive the deposition of the mixed gas in the reaction chamber, thereby significantly improving the uniformity of the deposition rate and the consistency of the film quality, in addition, through the precise control of the electric push rod, the height adjustment of the wafer substrate in the reaction chamber is realized, which meets the needs of different deposition processes for the position of the wafer substrate, and improves the performance of the vapor deposition equipment;

[0026] 2、The present application, by being provided with a detection assembly, realizes real-time monitoring and accurate control of the concentration of mixed gas in the reaction chamber, the electrochemical sensor, the resistance type semiconductor sensor and the thermal conductivity type gas sensor in the detection assembly can accurately measure the concentration of methyltrichlorosilane, hydrogen and argon respectively, ensuring comprehensive monitoring of the gas composition in the reaction chamber, meanwhile, by utilizing the linkage mechanism of the coupling, the transmission belt and the reciprocating screw rod, the sensor can be lifted and lowered with the rotation of the main shaft, thereby realizing dynamic detection of the concentration of mixed gas around the three groups of placing assemblies, not only improving the stability and controllability of the gas deposition process, but also effectively avoiding the deposition rate difference caused by uneven gas concentration, ensuring high-quality deposition of the wafer substrate;

[0027] 3、The present application, by being provided with a traction member, optimizes the gas flow and deposition effect, the traction member realizes effective guidance and replenishment of the mixed gas in the reaction chamber through the mutual cooperation of the circular magnet, the traction plate, the third protective shell, the exhaust fan and the annular pipe, when the concentration of mixed gas around a certain group of placing assemblies is detected to be insufficient, the traction member can quickly respond, the mixed gas is sucked in by the exhaust fan and uniformly sprayed on the wafer substrate through the annular pipe, not only improving the utilization rate of raw gas, but also ensuring the uniformity of gas distribution on the surface of the wafer substrate, thereby further improving the uniformity of deposition rate and the consistency of film quality. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 It is the overall structure schematic diagram of the present application;

[0029] Figure 2 It is the structure schematic diagram of the furnace door opening state of the present application;

[0030] Figure 3 It is the overall structure schematic diagram of the lifting and rotating mechanism of the present application;

[0031] Figure 4 It is the structure schematic diagram of the lifting and rotating mechanism of the present application from the bottom;

[0032] Figure 5 It is the split structure schematic diagram of the placing member and the main shaft body of the present application;

[0033] Figure 6 It is the explosion structure schematic diagram of the lifting and rotating mechanism of the present application;

[0034] Figure 7 It is the internal structure schematic diagram of the third protective shell of the present application;

[0035] Figure 8 It is the structure schematic diagram of the placing member from the bottom of the present application.

[0036] In the figure: 1, support; 2, chemical vapor deposition furnace; 3, furnace door; 4, base; 5, mounting groove; 6, servo motor; 7, main shaft body; 8, lifting disc; 9, sliding groove; 10, sliding block; 11, connecting block; 12, protective shell I; 13, electric push rod; 14, cylinder; 15, polygonal groove; 16, limiting hole; 17, limiting column; 18, epitaxial base; 19, fixing groove; 20, L-shaped block; 21, moving groove; 22, reciprocating screw rod; 23, coupling; 24, transmission belt; 25, moving block; 26, protective shell II; 27, electrochemical sensor; 28, resistance type semiconductor sensor; 29, thermal conductivity type gas sensor; 30, circular magnet; 31, traction plate; 32, air vent; 33, protective shell III; 34, exhaust fan; 35, connecting pipe; 36, connecting rod; 37, annular pipe; 38, through hole; 39, threaded groove; 40, limiting block; 41, threaded rod; 42, fixed plate; 43, rotating column; 44, connecting plate. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0038] In a typical embodiment of the present application, referring to Figures 1-8 As shown in the figure, a main shaft lifting and rotating device used by a vapor deposition equipment comprises a support 1, a chemical vapor deposition furnace 2 is fixedly installed on the top surface of the support 1, a furnace door 3 is installed on the front side wall of the chemical vapor deposition furnace 2 through a connecting piece, and a lifting and rotating mechanism is arranged inside the furnace door 3. The lifting and rotating mechanism comprises a base 4, a mounting groove 5 is formed in the top surface of the base 4, a servo motor 6 is fixedly installed in the inside of the mounting groove 5, a main shaft body 7 is rotationally connected to the top surface of the base 4, the cross-sectional shape of the main shaft body 7 is polygonal, the bottom surface of the main shaft body 7 is connected with the output shaft of the servo motor 6, a lifting disc 8 is slidingly installed on the outer surface of the main shaft body 7, a sliding groove 9 is formed in the side wall of the base 4, a sliding block 10 is slidingly connected in the inside of the sliding groove 9, a connecting block 11 is fixedly installed on the side wall of the sliding block 10, a protective shell I 12 is fixedly installed on the top surface of the connecting block 11, an electric push rod 13 is fixedly installed in the inside of the protective shell I 12, and the output end of the electric push rod 13 is connected with the bottom surface of the lifting disc 8.

[0039] The detection component is mounted on the base 4 and includes an L-shaped block 20, which is fixedly installed on the bottom surface of the base 4. The side wall of the L-shaped block 20 has a moving groove 21. The inner wall of the moving groove 21 is rotatably connected to a reciprocating screw 22. The reciprocating screw 22 and the outer surface of the main shaft body 7 are both fixedly mounted with couplings 23. A transmission belt 24 is provided between the two couplings 23. The outer surface of the reciprocating screw 22 is threadedly connected to a moving block 25, which slides in the moving groove 21.

[0040] The placement components are set on the spindle body 7. There are three sets of placement components, which are used to place the wafer substrate.

[0041] Based on the above features, the wafer substrate on the placement component can be rotated and raised to deposit with the mixed gas of methyltrichlorosilane and hydrogen and argon in the chemical vapor deposition furnace 2. Specifically, the placement component is sleeved on the outer surface of the spindle body 7. When the servo motor 6 is working, the spindle body 7 will rotate, causing the placement component to rotate. When it is necessary to raise or lower, the electric push rod 13 in the protective shell 12 will rise, causing the lifting plate 8 to rise on the outer surface of the spindle body 7. During the rising process, the lifting plate 8 will contact the bottom surface of the placement component, causing it to rise synchronously.

[0042] As a preferred embodiment of this example, please refer to [link / reference]. Figures 2-5 As shown, the placement assembly includes: a cylinder 14, which is disposed on the outer surface of the spindle body 7. A polygonal groove 15 is formed on the bottom surface of the cylinder 14. The polygonal groove 15 has the same specifications as the spindle body 7. Multiple limiting holes 16 are formed on the bottom surface of the cylinder 14. Multiple limiting posts 17 are formed on the top surface of the cylinder 14. An extension base 18 is fixedly installed on the outer surface of the cylinder 14. Multiple fixing grooves 19 are formed on the top surface of the extension base 18.

[0043] Based on the above features, the wafer substrate can be placed inside the chemical vapor deposition furnace 2. Specifically, the wafer substrate is placed in the fixing groove 19, and then the cylinder 14 is sleeved on the outer surface of the spindle body 7 through the polygonal groove 15.

[0044] As a preferred embodiment of this example, please refer to [link / reference]. Figures 4-6As shown, the detection assembly comprises: an L-shaped block 20 fixedly installed on the bottom surface of the base 4, a moving groove 21 is formed in the side wall of the L-shaped block 20, a reciprocating screw rod 22 is rotatably connected to the inner wall of the moving groove 21, a coupling 23 is fixedly installed on the outer surface of the main shaft body 7 and the reciprocating screw rod 22, a transmission belt 24 is arranged between the two couplings 23, a moving block 25 is threadedly connected to the outer surface of the reciprocating screw rod 22, the moving block 25 slides in the moving groove 21, the detection assembly further comprises: a protective shell two 26 fixedly installed on the side wall of the moving block 25, an electrochemical sensor 27, a resistance type semiconductor sensor 28 and a thermal conductivity type gas sensor 29 are fixedly installed in the inner part of the protective shell two 26, the sensing end of the electrochemical sensor 27, the resistance type semiconductor sensor 28 and the thermal conductivity type gas sensor 29 extends to the outside of the protective shell two 26 through the inner wall of the protective shell two 26, and the detection assembly further comprises a traction member.

[0045] Through the above features, the concentration of the mixed gas of methyltrichlorosilane and hydrogen argon around the lifting and rotating mechanism during operation can be detected. Specifically, during the rotation of the main shaft body 7, the two couplings 23 will rotate synchronously through the transmission belt 24, at this time the reciprocating screw rod 22 will rotate in the moving groove 21, at this time the moving block 25 threadedly connected with the reciprocating screw rod 22 will drive the protective shell two 26 to lift, at this time the electrochemical sensor 27, the resistance type semiconductor sensor 28 and the thermal conductivity type gas sensor 29 in the protective shell two 26 respectively detect the concentration of methyltrichlorosilane, the concentration of hydrogen and the concentration of argon, so as to detect the concentration of the mixed gas on the three groups of placing assemblies.

[0046] As a preferred embodiment in the present embodiment, please refer to Figure 4 、 Figure 5 and Figure 7 As shown, the traction member comprises: a circular magnet 30 sleeved on the outer surface of the main shaft body 7, three traction plates 31 are fixedly installed on the top surface of the circular magnet 30, a plurality of ventilation openings 32 are formed in the side wall of each of the three traction plates 31, a protective shell three 33 is fixedly installed on the side wall of each of the three traction plates 31, an exhaust fan 34 is fixedly installed in the inner part of each of the three protective shell threes 33, a connecting pipe 35 is arranged on the side wall of each of the three protective shell threes 33, the traction member further comprises: three annular pipes 37, the three annular pipes 37 are respectively installed on the outer wall of the three cylinders 14 through a plurality of connecting rods 36, a plurality of through holes 38 are formed in the bottom surface of each of the three annular pipes 37, and the other end of each of the three connecting pipes 35 is connected with the three annular pipes 37.

[0047] Through the above features, when the mixed gas concentration on the three groups of placing assemblies is detected to be low, the exhaust fan 34 in the protective shell 33 works, the mixed gas is injected into the annular pipe 37 through the connecting pipe 35 by the cooperation of the vent 32 and the exhaust fan 34, and is injected onto the wafer substrate through the through hole 38 at the bottom surface of the annular pipe 37.

[0048] As a preferred embodiment in the present embodiment, referring to Figure 5 With Figure 7 As shown in the figure, the top surface of the main shaft body 7 is provided with a threaded groove 39, and the upper portion of the main shaft body 7 is provided with a limiting block 40, the bottom surface of the limiting block 40 is fixedly installed with a threaded rod 41, and the threaded rod 41 cooperates with the threaded groove 39.

[0049] Through the above features, when the placing assembly is placed in the main shaft body 7, the staff rotates the limiting block 40 into the threaded groove 39 through the threaded rod 41, so that the limiting block 40 limits the top surface of the main shaft body 7, avoiding the placing assembly from separating from the main shaft body 7 in the process of lifting and lowering.

[0050] As a preferred embodiment in the present embodiment, referring to Figures 1-8 As shown in the figure, the present application also provides a method for using the main shaft lifting and rotating device used in the vapor deposition equipment, which is applied to the main shaft lifting and rotating device used in the vapor deposition equipment, and includes the following steps:

[0051] S1: Ensure that the support 1 stably supports the whole device, check whether the chemical vapor deposition furnace 2 is intact, whether the furnace door 3 can be normally opened and closed, confirm whether the servo motor 6 on the base 4 is correctly installed and check its working state, check whether the main shaft body 7 is firmly connected to the base 4, whether the polygonal cross-sectional shape is intact, whether the lifting disc 8 can smoothly slide on the main shaft body 7, and whether the electric push rod 13 can drive the lifting disc 8 to move up and down through the connecting block 11 and the sliding block 10, check whether the L-shaped block 20, the moving groove 21, the reciprocating wire rod 22, the shaft coupling 23, the transmission belt 24 detection assembly components are correctly installed, verify whether the placing assembly is ready and can stably install the wafer substrate on the main shaft body 7;

[0052] S2: Open the furnace door 3 using the connecting piece, so as to put the wafer substrate into the placing assembly, put the wafer substrate into the polygonal groove 15 of the cylinder 14, and ensure that it is stably fixed through the limiting hole 16 and the limiting column 17, close the furnace door 3, and lock it using the connecting piece, so as to ensure the sealing property in the vapor deposition process;

[0053] S3: start the servo motor 6, drive the main shaft body 7 to rotate through the shaft coupling 23 and the transmission belt 24, as needed, use the electric push rod 13 to drive the lifting disc 8 to move up and down through the sliding block 10 and the connecting block 11, adjust the position of the wafer substrate in the chemical vapor deposition furnace 2;

[0054] S4: start the electrochemical sensor 27, the resistance type semiconductor sensor 28 and the thermal conductivity type gas sensor 29 in the detection assembly, monitor the mixed gas concentration in the reaction chamber in real time, adjust the gas flow and reaction conditions in the vapor deposition process according to the data feedback by the sensors, to ensure the formation of uniform deposition layer on the wafer substrate;

[0055] S5: after the vapor deposition process is completed, stop the rotation of the servo motor 6 first, and use the electric push rod 13 to lower the lifting disc 8 to the lowest position, so as to take out the wafer substrate;

[0056] S6: open the furnace door 3, take out the deposited wafer substrate, clean the chemical vapor deposition furnace 2 and the residual in the placing assembly, and prepare for the next use.

[0057] Working principle:

[0058] In use, the wafer substrate is placed in the fixed groove 19 of the placing assembly, then the cylinder 14 is sleeved on the outer surface of the main shaft body 7 through the polygonal groove 15, and the limiting block 40 is rotated into the threaded groove 39 through the threaded rod 41, so as to limit the top surface of the main shaft body 7, prevent the placing assembly from separating from the main shaft body 7 during lifting, and the furnace door 3 on the front side wall of the chemical vapor deposition furnace 2 is connected with the furnace body through the connecting piece, the two fixed plates 42 of the connecting piece are fixed on the side wall of the furnace body, the rotating column 43 is rotatably connected between the two fixed plates 42, and the connecting plate 44 connects the rotating column 43 and the furnace door 3, so as to realize the opening and closing of the furnace door 3;

[0059] When the wafer substrate needs to be deposited, the servo motor 6 is started, the output shaft drives the main shaft body 7 to rotate, and then the placing assembly rotates, so that the wafer substrate uniformly receives the deposition of the mixed gas of methyltrichlorosilane and hydrogen argon in the chemical vapor deposition furnace 2. If it is necessary to adjust the height of the placing assembly, the electric push rod 13 in the protective shell 12 is raised, the lifting disc 8 is pushed to rise on the main shaft body 7, and the lifting disc 8 contacts the bottom surface of the placing assembly to make it rise synchronously;

[0060] During the rotation of the main shaft body 7, the reciprocating screw rod 22 rotates in the moving groove 21 of the L-shaped block 20 due to the effect of the shaft coupling 23 and the transmission belt 24, drives the moving block 25 threaded with the reciprocating screw rod 22 to ascend and descend, so that the electrochemical sensor 27, the resistance type semiconductor sensor 28 and the thermal conductivity type gas sensor 29 in the protective shell two 26 detect the concentrations of methyltrichlorosilane, hydrogen and argon respectively, and the detection of the concentrations of the mixed gases around the three groups of placing assemblies is realized.

[0061] When the concentrations of the mixed gases on the three groups of placing assemblies are detected to be low, the exhaust fan 34 in the protective shell three 33 works, the mixed gases are sucked through the air vent 32, injected into the annular pipe 37 through the connecting pipe 35, and then injected into the wafer substrate through the through hole 38 at the bottom surface of the annular pipe 37, so as to ensure the deposition effect.

[0062] The above is only the preferred specific implementation of the present application, but the protection scope of the present application is not limited to this, any skilled person in the art can make equivalent replacement or change according to the technical scheme and the inventive concept of the present application within the technical range disclosed by the present application, which should be covered in the protection scope of the present application.

Claims

1. A spindle lifting and rotating device used in a vapor deposition equipment, comprising a support (1), a chemical vapor deposition furnace (2) is fixedly installed on the top surface of the support (1), a furnace door (3) is installed on the front side wall of the chemical vapor deposition furnace (2) through a connecting piece, characterized in that: Also include: Lifting and rotating mechanism, lifting and rotating mechanism is arranged inside the furnace door (3), lifting and rotating mechanism includes: Base (4), the top surface of the base (4) is provided with mounting groove (5), the inside of the mounting groove (5) is fixedly installed with servo motor (6), the top surface of the base (4) is rotatably connected with main shaft body (7); Detection assembly, detection assembly is arranged on base (4), detection assembly includes: L type block (20), the L type block (20) is fixedly installed on the bottom surface of base (4), the side wall of the L type block (20) is provided with moving groove (21), the inner wall of the moving groove (21) is rotatably connected with reciprocating screw rod (22), the outer surface of the reciprocating screw rod (22) and main shaft body (7) are all fixedly installed with shaft coupling (23), transmission belt (24) is arranged between the two shaft couplings (23), the outer surface of the reciprocating screw rod (22) is threadedly connected with moving block (25), the moving block (25) slides in the moving groove (21); Placing assembly, placing assembly is arranged on main shaft body (7), and placing assembly is provided with three groups.

2. The spindle lifting and rotating device used for a vapor deposition apparatus according to claim 1, characterized by: Placing assembly includes: Cylinder (14), the cylinder (14) is arranged on the outer surface of main shaft body (7), the bottom surface of the cylinder (14) is provided with polygonal groove (15), the polygonal groove (15) is same as the specification of main shaft body (7), the bottom surface of the cylinder (14) is provided with a plurality of limiting holes (16), the top surface of the cylinder (14) is provided with a plurality of limiting columns (17), the outer surface of the cylinder (14) is fixedly installed with outer extension base (18), the top surface of the outer extension base (18) is provided with a plurality of fixed grooves (19).

3. The spindle lifting and rotating device used in a vapor deposition apparatus according to claim 2, characterized by: Detection assembly further includes: Protective shell two (26), the protective shell two (26) is fixedly installed on the side wall of the moving block (25), the inner part of the protective shell two (26) is fixedly installed with electrochemical sensor (27), resistance type semiconductor sensor (28) and thermal conductivity type gas sensor (29) respectively, the sensing end of the electrochemical sensor (27), resistance type semiconductor sensor (28) and thermal conductivity type gas sensor (29) extends to the outside of the protective shell two (26) through the inner wall of the protective shell two (26), detection assembly further includes traction member.

4. The spindle lifting and rotating device for use in a vapor deposition apparatus according to claim 3, characterized by: Traction member includes: Round magnet (30), the round magnet (30) is sleeved on the outer surface of main shaft body (7), the top surface of the round magnet (30) is fixedly installed with three traction plates (31), the side wall of the three traction plates (31) is provided with a plurality of ventilation openings (32), the side wall of the three traction plates (31) is fixedly installed with protective shell three (33), the inside of the three protective shell threes (33) is fixedly installed with exhaust fan (34), the side wall of the three protective shell threes (33) is provided with connecting pipe (35).

5. The spindle lift and rotation device for use in a vapor deposition apparatus according to claim 4, characterized by: Traction member further includes: Three annular pipes (37), three said annular pipes (37) are respectively installed on the outer wall of three cylinders (14) through a plurality of connecting rods (36), the bottom surface of three said annular pipes (37) is provided with a plurality of through holes (38), the other end of three connecting pipes (35) is connected with three annular pipes (37) respectively.

6. The spindle lift and rotation device for use in a vapor deposition apparatus according to claim 5, wherein: The top surface of the main shaft body (7) is provided with a threaded groove (39), the upper side of the main shaft body (7) is provided with a limiting block (40), the bottom surface of the limiting block (40) is fixedly installed with a threaded rod (41), and the threaded rod (41) is matched with the threaded groove (39).

7. The spindle lift and rotation device for use in a vapor deposition apparatus according to claim 6, wherein: The connecting piece comprises: Two fixed plates (42) are distributed in upper and lower positions and are fixedly installed on the side wall of the chemical vapor deposition furnace (2), two rotating columns (43) are rotatably connected between the two fixed plates (42), connecting plates (44) are fixedly installed on the outer surfaces of the two rotating columns (43), and the side wall of the connecting plate (44) is connected with the front side wall of the furnace door (3).

8. The spindle lift and rotation device for use in a vapor deposition apparatus according to claim 7, characterized by: The cross section shape of the main shaft body (7) is polygonal, the bottom surface of the main shaft body (7) is connected with the output shaft of the servo motor (6), the outer surface of the main shaft body (7) is slidably installed with a lifting disc (8), the side wall of the base (4) is provided with a sliding groove (9), the inside of the sliding groove (9) is slidably connected with a sliding block (10), the side wall of the sliding block (10) is fixedly installed with a connecting block (11), the top surface of the connecting block (11) is fixedly installed with a protection shell I (12), the inside of the protection shell I (12) is fixedly installed with an electric push rod (13), and the output end of the electric push rod (13) is connected with the bottom surface of the lifting disc (8).

9. The method of using the spindle lifting and rotating device for a vapor deposition apparatus, applied to the spindle lifting and rotating device for a vapor deposition apparatus according to claim 8, wherein, The method comprises the following steps: S1: Ensure that the support (1) stably supports the whole device, check whether the chemical vapor deposition furnace (2) is intact, whether the furnace door (3) can be normally opened and closed, confirm that the servo motor (6) on the base (4) has been correctly installed and check its working state, check whether the main shaft body (7) is firmly rotatably connected to the base (4), whether the polygonal cross section shape is intact, whether the lifting disc (8) can stably slide on the main shaft body (7), and whether the electric push rod (13) can drive the lifting disc (8) to move up and down through the connecting block (11) and the sliding block (10), check whether the L-shaped block (20), the moving groove (21), the reciprocating lead screw (22), the shaft coupling (23), the transmission belt (24) detection assembly components are correctly installed, verify whether the placing assembly is ready and can stably install the wafer substrate on the main shaft body (7); S2: open the furnace door (3) using the connecting piece, so as to put the wafer substrate into the placing assembly, put the wafer substrate into the polygonal groove (15) of the cylinder (14), and ensure that it is stably fixed through the limiting hole (16) and the limiting column (17), close the furnace door (3) and lock it using the connecting piece, so as to ensure the sealing property during the vapor deposition process; S3: Start the servo motor (6) to drive the main shaft body (7) to rotate through the shaft coupling (23) and the transmission belt (24). According to the needs, use the electric push rod (13) to drive the lifting disc (8) to move up and down through the sliding block (10) and the connecting block (11) to adjust the position of the wafer substrate in the chemical vapor deposition furnace (2); S4: Start the electrochemical sensor (27), the resistance type semiconductor sensor (28) and the thermal conductivity gas sensor (29) in the detection assembly to monitor the mixed gas concentration in the reaction chamber in real time. According to the data feedback by the sensors, adjust the gas flow and reaction conditions during the vapor deposition process to ensure the formation of uniform deposition layer on the wafer substrate; S5: After the vapor deposition process is completed, stop the rotation of the servo motor (6) first, and then use the electric push rod (13) to lower the lifting disc (8) to the lowest position for taking out the wafer substrate; S6: Open the furnace door (3) to take out the deposited wafer substrate, clean the residues in the chemical vapor deposition furnace (2) and the placing assembly, and prepare for the next use.

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