Crystal growth furnace and semiconductor process equipment

Abstract

The invention discloses a crystal growth furnace and semiconductor process equipment. The disclosed crystal growth furnace comprises a furnace body and a temperature gradient adjusting device, the furnace body comprises an upper cover, the thickness direction of the upper cover is defined as the first direction, the upper cover is provided with heat dissipation holes penetrating through the upper cover in the first direction, the temperature gradient adjusting device is arranged in the furnace body and comprises a plurality of heat insulation discs, and the heat insulation discs are arranged in the first direction; the heat insulation discs are provided with through holes penetrating through the heat insulation discs in the first direction, the hole diameters of the through holes correspondingly formed in the heat insulation discs are not completely the same, the through holes are sequentially communicated in the first direction to form heat dissipation channels, and the heat dissipation channels are communicated with the heat dissipation holes. According to the temperature gradient adjusting device, by changing the arrangement sequence of the heat insulation discs and / or changing the positions of the heat insulation discs in the first direction, due to the fact that the arrangement sequence of the heat insulation discs and the combination mode of the arrangement positions are diversified, the axial temperature gradient of the furnace body can be flexibly adjusted, and then the temperature gradient adjusting window is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor preparation technology, and in particular to a crystal growth furnace and semiconductor process equipment. Background Art

[0002] As a representative material of the third-generation semiconductor, silicon carbide has developed rapidly in recent years. Physical vapor transport is widely used as the mainstream method for preparing silicon carbide crystals. Physical vapor transport requires the use of a crystal growth furnace for related processes. In the production process of silicon carbide crystals, the temperature gradient inside the crystal growth furnace is the basic driving force for the growth of silicon carbide crystals. The temperature gradient of the crystal growth furnace mainly includes the temperature gradient along the axial and radial directions of the crystal growth furnace.

[0003] Silicon carbide crystals of different specifications have different requirements for the temperature gradient inside the crystal growth furnace. However, the crystal growth furnace in the related art is difficult to adapt to the production process of silicon carbide crystals of different specifications due to the small adjustment window of the axial temperature gradient. Summary of the invention

[0004] The present application discloses a crystal growth furnace and semiconductor process equipment to solve the problem in the related art that the crystal growth furnace has a small adjustment window of the axial temperature gradient and is difficult to adapt to the production process of silicon carbide crystals of different specifications.

[0005] In order to solve the above technical problems, this application is implemented as follows: In a first aspect, an embodiment of the present application discloses a crystal growth furnace, wherein the disclosed crystal growth furnace comprises a furnace body and a temperature gradient regulating device; The furnace body comprises an upper cover, the upper cover is provided with a heat dissipation hole penetrating the upper cover along a first direction, the temperature gradient regulating device is arranged in the furnace body, the temperature gradient regulating device comprises a plurality of heat insulation disks, and the plurality of heat insulation disks are arranged along the first direction; The heat insulation plate is provided with a through hole penetrating the heat insulation plate along the first direction, and the apertures of the through holes corresponding to the plurality of heat insulation plates are not completely the same, and the plurality of through holes are sequentially connected along the first direction to form a heat dissipation channel, and the heat dissipation channel is connected with the heat dissipation holes; The temperature gradient adjustment device is configured to adjust the axial temperature gradient of the furnace body by changing the arrangement order of the plurality of heat insulation disks and / or changing the positions of the heat insulation disks along the first direction; Wherein, the first direction is the thickness direction of the upper cover.

[0006] In a second aspect, an embodiment of the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes the above-mentioned crystal growth furnace.

[0007] The technical solution adopted in this application can achieve the following technical effects: The crystal growth furnace disclosed in the embodiment of the present application improves the related technology. The disclosed crystal growth furnace includes a furnace body and a temperature gradient regulating device; the furnace body includes an upper cover, the thickness direction of the upper cover is defined as a first direction, the upper cover is provided with heat dissipation holes penetrating the upper cover along the first direction, the temperature gradient regulating device is arranged in the furnace body, the temperature gradient regulating device includes a plurality of heat-insulating disks, and the plurality of heat-insulating disks are arranged along the first direction; the heat-insulating disks are provided with through holes penetrating the heat-insulating disks along the first direction, and the apertures of the through holes corresponding to the plurality of heat-insulating disks are not exactly the same, the plurality of through holes are connected in sequence along the first direction to form a heat dissipation channel, the heat dissipation channel and the heat dissipation holes are connected to each other, and the heat inside the furnace body can be transferred to the outside of the furnace body through the heat dissipation channel and the heat dissipation window. The above-mentioned temperature gradient adjustment device can control the heat discharged from the furnace body from the heat dissipation channel by changing the arrangement order of multiple insulation disks and / or changing the positions of the insulation disks along the first direction, thereby adjusting the axial temperature gradient of the furnace body. Moreover, since the arrangement order and setting position combinations of the multiple insulation disks are relatively diverse, the axial temperature gradient of the furnace body can be flexibly adjusted according to different process requirements, thereby improving the adjustment window of the temperature gradient. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 A schematic diagram of the structure of a crystal growth furnace disclosed in an embodiment of the present application; Figure 2 An exploded view of a crystal growth furnace disclosed in an embodiment of the present application; Figure 3 This is one of the structural schematic diagrams of the temperature gradient regulating device disclosed in the embodiment of the present application; Figure 4 This is a second structural schematic diagram of the temperature gradient regulating device disclosed in the embodiment of the present application; Figure 5 This is the third structural schematic diagram of the temperature gradient regulating device disclosed in the embodiment of the present application; Figure 6 This is a fourth structural schematic diagram of the temperature gradient regulating device disclosed in the embodiment of the present application; Figure 7 This is a fifth structural schematic diagram of the temperature gradient regulating device disclosed in the embodiment of the present application; Figure 8 This is the sixth structural schematic diagram of the temperature gradient regulating device disclosed in the embodiment of the present application; Fig. 9 This is a schematic diagram of the assembly structure of the cooling pipe and the detection window disclosed in the embodiment of the present application; Fig.10 This is a schematic diagram of the partial structure of the crystal growth furnace disclosed in the embodiment of the present application.

[0009] Description of reference numerals: 100-furnace body, 110-shell, 120-upper cover, 121-upper cover body, 122-cooling pipe, 1221-water cooling interlayer, 1222-inner pipe, 1223-outer pipe, 123-heat dissipation hole, 124-detection window, 130-lower cover, 140-first insulation layer, 141-sub-insulation layer, 142-flow gap, 143-exhaust channel, 150-second insulation layer, 160-third insulation layer, 170-crucible assembly, 171-crucible body, 172-insulation cylinder, 173-first heating element, 174-second heating element, 175-bearing part, 180-labyrinth groove, 190-elastic insulation element, 200-temperature gradient adjustment device, 210-insulation plate, 211-through hole, 212-heat dissipation channel, 220-insulation cylinder, 230-insulation ring, 300-First direction. DETAILED DESCRIPTION

[0010] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0011] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of the same type, and the number of objects is not limited. For example, the first object can be one or more.

[0012] The technical solutions disclosed in various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0013] Please refer to Figures 1 to 10, the embodiment of the present application discloses a crystal growth furnace, and the disclosed crystal growth furnace may include a furnace body 100 and a temperature gradient regulating device 200. The furnace body 100 has a process space inside, and the process space can be used to place components such as crucibles, heaters, and insulation parts. The furnace body 100 includes an upper cover 120, and the upper cover 120 is located at the top of the furnace body 100. The thickness direction of the upper cover 120 is defined as a first direction 300. The upper cover 120 is provided with a heat dissipation hole 123, and the heat dissipation hole 123 passes through the upper cover 120 along the first direction 300. Part of the heat inside the furnace body 100 can be discharged through the heat dissipation hole 123. It should be noted that in order to ensure that the process space inside the furnace body 100 is relatively closed, a cooling device, such as a cooling cylinder, a cooling cover, etc., can be arranged outside the furnace body 100, and the cooling device is covered and installed on the heat dissipation hole 123, so that the furnace body 100 can dissipate heat normally through the heat dissipation hole 123, and the sealing of the furnace body 100 can be ensured.

[0014] The axial temperature gradient of the furnace body 100 is a key parameter in the crystal growth process, which directly affects the quality and growth rate of the crystal. In this embodiment, the axial temperature gradient of the furnace body 100 can be considered as the temperature gradient of the furnace body 100 along the first direction 300. The axial temperature gradient of the furnace body 100 is mainly formed by the above-mentioned heat dissipation holes 123. Specifically, the upper part of the furnace body 100 (the area close to the heat dissipation holes 123) can be radiated and dissipated through the heat dissipation holes 123, while the middle and lower parts of the furnace body 100 (the area far away from the heat dissipation holes 123) lose relatively less heat through the heat dissipation holes 123. In other words, the upper part of the furnace body 100 is lower in temperature than the middle and lower parts of the furnace body 100, thereby forming the axial temperature gradient of the furnace body 100.

[0015] Taking the production process of silicon carbide crystals as an example, silicon carbide crystals of different specifications have different requirements for the axial temperature gradient of the furnace body 100, which requires corresponding adjustment of the axial temperature gradient of the furnace body 100. In the related art, the axial temperature gradient of the furnace body 100 is generally changed by adjusting the power of the heater inside the furnace body 100. However, the above adjustment method has the problem of a small adjustment window, and it is difficult to adapt to the production process of silicon carbide crystals of different specifications.

[0016] Based on the above problems, Figures 1 to 8As shown, a temperature gradient regulating device 200 may be added to the furnace body 100, and the temperature gradient regulating device 200 may include a plurality of heat insulation disks 210, the plurality of heat insulation disks 210 are arranged along the first direction 300, the heat insulation disks 210 may be made of thermal insulation felt, the heat insulation disks 210 are provided with through holes 211 penetrating the heat insulation disks 210 along the first direction 300, and the apertures of the through holes 211 corresponding to the plurality of heat insulation disks 210 are not completely the same. The plurality of through holes 211 are sequentially connected along the first direction 300 to form a heat dissipation channel 212, and the heat dissipation channel 212 is mutually connected with the heat dissipation holes 123 of the upper cover 120. It can be understood that before the temperature gradient regulating device 200 is set, the furnace body 100 can directly dissipate heat through the heat dissipation holes 123 of the upper cover 120. After the temperature gradient regulating device 200 is set, the furnace body 100 needs to dissipate heat through the heat dissipation channel 212 and the heat dissipation holes 123. The temperature gradient regulating device 200 can control the heat discharged from the furnace body 100 from the heat dissipation channel 212, thereby realizing flexible adjustment of the axial temperature gradient of the furnace body 100.

[0017] The temperature gradient regulating device 200 can specifically adjust the axial temperature gradient of the furnace body 100 by changing the arrangement order of the multiple heat insulation disks 210, and / or changing the position of the heat insulation disks 210 along the first direction 300. Specifically, taking the change of the arrangement order as an example, since the apertures of the through holes 211 opened by the multiple heat insulation disks 210 are not exactly the same, the heat dissipation performance corresponding to different apertures is also different. Under the condition that other conditions remain unchanged, the larger the aperture of the through hole 211, the better the heat dissipation performance. Conversely, the smaller the aperture of the through hole 211, the worse the heat dissipation performance. By changing the arrangement order of the multiple heat insulation disks 210, a combination of different apertures can be obtained, so that the heat discharged from the heat dissipation channel 212 of the furnace body 100 can be controlled to achieve the adjustment of the axial temperature gradient of the furnace body 100.

[0018] Taking changing the position of the heat-insulating plate 210 along the first direction 300 as an example, a certain area in the furnace body 100 can be defined as a heat source, such as the area where the crucible body 171 is located. Taking the crucible body 171 as a reference, the position of the heat-insulating plate 210 along the first direction 300 is different, and the corresponding radiation angle of the radiation heat dissipation is also different, and the radiation angle will directly affect the heat dissipation performance. Under the condition that other conditions remain unchanged, the closer the heat-insulating plate 210 is to the crucible body 171, the greater the radiation angle of the radiant heat dissipation of the crucible body 171. Conversely, the farther the heat-insulating plate 210 is from the crucible body 171, the smaller the radiation angle of the radiant heat dissipation of the crucible body 171. By changing the position of the heat-insulating plate 210 along the first direction 300, different radiation angle combinations can be obtained, so that the heat discharged from the heat dissipation channel 212 of the furnace body 100 can be controlled, and the axial temperature gradient of the furnace body 100 can be adjusted.

[0019] It should be supplemented that the amount of heat discharged from the furnace body 100 through the heat dissipation channel 212 can also be controlled by changing the number of heat insulation disks 210. When other conditions remain unchanged, the more heat insulation disks 210 there are, the less heat the furnace body 100 can discharge from the heat dissipation channel 212, and the temperature of the upper part of the furnace body 100 will increase accordingly. On the contrary, the fewer heat insulation disks 210 there are, the more heat the furnace body 100 can discharge from the heat dissipation channel 212, and the temperature of the upper part of the furnace body 100 will decrease accordingly, thereby achieving the adjustment of the axial temperature gradient of the furnace body 100.

[0020] From the above description, it can be seen that the crystal growth furnace disclosed in the embodiment of the present application improves the relevant technology. The temperature gradient adjustment device 200 inside the crystal growth furnace can control the heat discharged from the furnace body 100 from the heat dissipation channel 212 by changing the arrangement order of the multiple insulation disks 210 and / or changing the position of the insulation disks 210 along the first direction 300, so as to adjust the axial temperature gradient of the furnace body 100. In addition, since the arrangement order and setting position combination of the multiple insulation disks 210 are relatively diverse, the axial temperature gradient of the furnace body 100 can be flexibly adjusted according to different process requirements, thereby improving the adjustment window of the temperature gradient.

[0021] like Figures 1 to 8 As shown, the temperature gradient regulating device 200 may further include an insulating tube 220, which may be made of thermal insulation felt. The insulating tube 220 is disposed in the furnace body 100, and the insulating tube 220 has a first end and a second end opposite to each other along a first direction 300, and both the first and second ends of the insulating tube 220 are provided with openings, the first end of the insulating tube 220 is close to the heat dissipation hole 123, and is connected to the upper cover 120 of the furnace body 100, and the second end of the insulating tube 220 is away from the heat dissipation hole 123. The connection method between the insulating tube 220 and the upper cover 120 of the furnace body 100 may include snap connection, bolt connection, etc.

[0022] The plurality of heat-insulating plates 210 are movably arranged in the heat-insulating cylinder 220 along the first direction 300, so that the arrangement order and position of the plurality of heat-insulating plates 210 can be adjusted. Moreover, the heat-insulating cylinder 220 can prevent the heat in the furnace body 100 from being transferred to the outside of the furnace body 100 from the area outside the heat dissipation channel 212, which is conducive to improving the control accuracy of the temperature gradient. In order to allow the heat in the furnace body 100 to be discharged through the heat dissipation channel 212 as much as possible, the periphery of the heat-insulating plate 210 can be in contact with the inner wall of the heat-insulating cylinder 220.

[0023] like Figures 1 to 8As shown, at least two of the plurality of heat-insulating disks 210 are stacked along a first direction 300, and the apertures of the at least two stacked heat-insulating disks 210 increase along the first direction 300, thereby forming a stepped heat dissipation channel 212. Since the first direction 300 can be a direction from the heat-insulating disk 210 to the heat-dissipating hole 123, or a direction from the heat-dissipating hole 123 to the heat-insulating disk 210, the apertures of the at least two stacked heat-insulating disks 210 increase along the first direction 300 in the following two cases: first, as Figure 3 , Figure 4 , Figure 6 , Figure 8 As shown, the aperture of the through hole 211 of the heat-insulating plate 210 close to the heat-dissipating hole 123 is larger than the aperture of the through hole 211 of the heat-insulating plate 210 far from the heat-dissipating hole 123; secondly, as shown Figure 5 and Figure 7 As shown, the aperture of the through hole 211 of the heat insulating plate 210 close to the heat dissipation hole 123 is smaller than the aperture of the through hole 211 of the heat insulating plate 210 far from the heat dissipation hole 123. The adjustment results of the axial temperature gradient of the furnace body 100 corresponding to the above two situations are different, and can be selected according to the actual demand for the axial temperature gradient of the furnace body 100.

[0024] like Figures 1 to 8 As shown, the temperature gradient regulating device 200 may further include an insulation ring 230, which may also be made of insulation felt. The insulation ring 230 is an annular structure and is extended along the first direction 300. The outer surface of the insulation ring 230 is in contact with the inner wall of the insulation tube 220, and the end surface of the insulation ring 230 is connected to the disk surface of the insulation disk 210, so that the insulation disk 210 can be supported and the insulation disk 210 can be supported at a predetermined position.

[0025] In an optional embodiment of the present application, the end surface of the heat insulation ring 230 can be connected to the disk surface of the heat insulation disk 210 facing away from the heat dissipation hole 123, so that the heat insulation disk 210 can be supported on the first end of the heat insulation tube 220. Of course, the end surface of the heat insulation ring 230 can also be connected to the disk surface of the heat insulation disk 210 facing the heat dissipation hole 123, so that the heat insulation disk 210 can be supported on the second end of the heat insulation tube 220. Heat insulation rings 230 can also be provided on both sides of the heat insulation disk 210 along the first direction 300, and the two heat insulation rings 230 are respectively connected to the two opposite disk surfaces of the heat insulation disk 210, so that the heat insulation disk 210 can be supported between the first end and the second end of the heat insulation tube 220. The above embodiment only lists several matching modes of the heat insulation ring 230 and the heat insulation disk 210. In the actual process, the combination mode of the heat insulation ring 230 and the heat insulation disk 210 can be flexibly adjusted according to the requirements of the axial temperature gradient of the furnace body 100.

[0026] like Figures 3 to 8As shown, compared to Figure 3 , Figure 4 The number of heat-insulating plates 210 is increased, and in the direction from the heat-insulating plates 210 to the heat-dissipating holes 123, the plurality of heat-insulating plates 210 are arranged in a manner of increasing hole diameters. Figure 4 , Figure 5 The arrangement order of the plurality of heat-insulating plates 210 is changed, and in the direction from the heat-insulating plates 210 to the heat-dissipating holes 123 , the plurality of heat-insulating plates 210 are arranged in a manner of decreasing hole diameters. Figure 6 The positions of the plurality of heat-insulating disks 210 along the first direction are changed, and the plurality of heat-insulating disks 210 are supported on the first end of the heat-insulating cylinder 220 by using the heat-insulating ring 230 . Figure 7 Compared to Figure 5 , two heat-insulating rings 230 are used to support a plurality of heat-insulating disks 210 between the first end and the second end of the heat-insulating cylinder 220; similarly, Figure 8 Compared to Figure 4 , two insulation rings 230 are also used to support multiple insulation disks 210 between the first end and the second end of the insulation tube 220.

[0027] like Figure 1 and Figure 2 As shown, the furnace body 100 may also include a shell 110 and a lower cover 130, both ends of the shell 110 along the first direction 300 are open ends, and the upper cover 120 and the lower cover 130 are respectively covered at the openings at both ends of the shell 110 to enclose a process space, and the temperature gradient regulating device 200 is arranged in the process space. The upper cover 120 and the shell 110 are assembled in a detachable manner to facilitate maintenance of the interior of the furnace body 100. The first end of the insulation tube 220 is connected to the surface of the upper cover 120 close to the process space, and the specific connection method can be clamping, bolt connection, etc. In addition, an annular cooling water channel is provided in the upper cover 120 to protect the upper cover 120 from overheating. Similarly, the lower cover 130 is also provided with an annular cooling water channel, which also plays a cooling protection role.

[0028] like Figure 1 , Figure 2 , Fig. 9As shown, the upper cover 120 includes an upper cover body 121, a cooling pipe 122 and a detection window 124, a heat dissipation hole 123 is opened in the upper cover body 121, the cooling pipe 122 is arranged outside the furnace body 100, the first pipe mouth of the cooling pipe 122 is connected with the heat dissipation hole 123, the detection window 124 is arranged at the second pipe mouth of the cooling pipe 122, and the detection window 124 is sealed and connected with the cooling pipe 122, and the pipe wall of the cooling pipe 122 is provided with a water-cooled interlayer 1221. It can be understood that the cooling pipe 122, as a cold source, can take away the heat discharged from the heat dissipation hole 123 to ensure the heat dissipation efficiency of the heat dissipation hole 123, and the cooling pipe 122 can also make the furnace body 100 in a relatively closed state, which is conducive to improving the process quality. The detection window 124 can be made of quartz, and the infrared thermometer can detect the temperature inside the furnace body 100 through the detection window 124. Considering that the infrared thermometer needs to irradiate into the furnace body 100 through the detection window 124, the heat dissipation holes 123 and the heat dissipation channel 212, to ensure the accuracy of the infrared thermometer measurement, the projections of the heat dissipation channel 212, the heat dissipation holes 123 and the detection window 124 along the first direction 300 at least partially overlap.

[0029] like Fig. 9 As shown, the cooling pipe 122 includes an inner pipe 1222 and an outer pipe 1223, the outer pipe 1223 is sleeved outside the inner pipe 1222, and the outer pipe 1223 and the inner pipe 1222 form a water-cooled interlayer 1221, and cooling water circulates in the water-cooled interlayer 1221. In order to improve the sealing performance of the assembly between the detection window 124 and the cooling pipe 122, a sealing ring is often arranged between the detection window 124 and the cooling pipe 122. The sealing ring is prone to aging in a high temperature environment for a long time, thereby causing airtightness problems. To solve this problem, the inner pipe 1222 of the cooling pipe 122 gradually decreases in diameter from away from the detection window 124 to close to the detection window 124 to form a conical contraction structure. With such a design, a large amount of heat radiation will first act on the wall of the inner pipe 1222, and then the heat will be taken away by the cooling water, and at the same time, the heat acting on the sealing ring is greatly reduced, so that the temperature of the detection window 124 and the sealing ring can be reduced to a certain extent, thereby improving safety.

[0030] like Figure 1 , Figure 2 and Fig.10 As shown, the furnace body 100 also includes a first insulation layer 140, a second insulation layer 150, a third insulation layer 160 and a crucible assembly 170. The first insulation layer 140, the second insulation layer 150 and the third insulation layer 160 can be made of hard graphite felt. Compared with soft felt, hard graphite felt has higher hardness and can be machined into a required shape. In order to extend its service life, the outer surface of the hard graphite felt can be further coated with a graphite coating to protect the internal fibers.

[0031] The first insulation layer 140 is arranged on the inner wall of the shell 110, the second insulation layer 150 is arranged on the surface of the upper cover 120 close to the process space, and the second insulation layer 150 is arranged around the outer side of the insulation tube 220, which can prevent the heat in the furnace body 100 from being transferred from the area outside the heat dissipation channel 212 to the outside of the furnace body 100, further improving the control accuracy of the temperature gradient. The third insulation layer 160 is arranged on the surface of the lower cover 130 close to the process space. When the upper cover 120 and the lower cover 130 are respectively covered with the shell 110, the first insulation layer 140, the second insulation layer 150 and the third insulation layer 160 together enclose the insulation space for placing the crucible assembly 170.

[0032] In order to ensure that the lower cover 130 and the shell 110 can be assembled smoothly without interference, a safety margin is generally reserved between the third insulation layer 160 and the first insulation layer 140 to avoid collision and friction when the two move relative to each other. Therefore, a large gap is inevitably left between the third insulation layer 160 and the first insulation layer 140. The heater, crucible, crucible tray, etc. inside the furnace body 100 will radiate a large amount of heat to the relatively low temperature area of ​​the third insulation layer 160 and the lower cover 130, resulting in the lower cover 130 and the sealing ring set at the lower cover 130. The temperature is too high, which is not conducive to the reliable operation and sealing of the sealing ring. In addition, in the actual process, the process space inside the furnace body 100 is not completely vacuum, but has a certain process gas and maintains the process pressure required for crystal growth. Therefore, the process gas in the process space can flow through the structural gap through itself to generate heat conduction, which will also act on the lower cover 130 and the sealing ring set at the lower cover 130, exacerbating the high temperature here.

[0033] To solve the above problems, Figure 1 , Figure 2 , Fig.10 As shown, there is a stepped contact surface between the first thermal insulation layer 140 and the third thermal insulation layer 160, and the first thermal insulation layer 140 and the third thermal insulation layer 160 are both provided with a labyrinth groove 180 at the contact surface, and are mutually engaged through the labyrinth groove 180. The above design can reduce the problem of excessive temperature of the lower cover 130 and the sealing ring provided at the lower cover 130 caused by heat radiation and gas heat conduction to a certain extent, thereby avoiding the problem of aging of the sealing ring when it is in a high temperature environment for a long time.

[0034] In addition, if Fig.10As shown, in order to further block the transfer of heat, the furnace body 100 also includes an elastic thermal insulation member 190. The elastic thermal insulation member 190 can be made of soft felt and has a certain elasticity. The elastic thermal insulation member 190 is arranged in the labyrinth groove 180. When the first thermal insulation layer 140 and the third thermal insulation layer 160 are in contact with each other, the elastic thermal insulation member 190 can be compressed and seal the gap between the first thermal insulation layer 140 and the third thermal insulation layer 160, thereby preventing heat from being transferred to the lower cover 130, further reducing the temperature of the lower cover 130 and the sealing ring.

[0035] Please continue to refer to Fig.10 The first thermal insulation layer 140 includes a plurality of sub-insulation layers 141 stacked along the first direction 300, the gaps between adjacent sub-insulation layers 141 are matched to form a flow gap 142, an exhaust channel 143 is provided between the first thermal insulation layer 140 and the inner wall of the shell 110, the flow gap 142 is connected to the exhaust channel 143, and the exhaust channel 143 can be connected to the vacuum pump outside the furnace body 100. During the process, the process gas enters the process space while being drawn away by the vacuum pump through the exhaust channel 143 and the flow gap 142, so that the pressure in the process space reaches a dynamic balance. This design allows the high-temperature process gas that originally flows to the lower cover 130 to be drawn away, thereby reducing the heat conduction of the process gas to the position of the lower cover 130, enhancing the thermal insulation of the lower cover 130 area, thereby effectively reducing the temperature of the lower cover 130 and the sealing ring, and improving safety.

[0036] like Figure 1 , Figure 2 , Fig.10 As shown, the crucible assembly 170 includes a crucible body 171, a heat preservation tube 172, a first heating element 173, a second heating element 174 and a bearing portion 175. The temperature gradient adjustment device 200 can be specifically located between the crucible body 171 and the heat dissipation hole 123. It should be noted that the crucible body 171 is arranged inside the furnace body 100, and is mainly used to carry the raw materials required for crystal growth. The first heating element 173 and the second heating element 174 can heat the crucible body 171. During the crystal growth process, the seed crystal needs to extend into the crucible body 171, that is, the axial temperature gradient of the furnace body 100 can be refined into the axial (first direction 300) temperature gradient of the crucible body 171, and the parameters such as the growth rate of the crystal are actually directly related to the axial temperature gradient of the crucible body 171.

[0037] Since the crucible body 171 is located inside the furnace body 100, similarly, the axial temperature gradient of the crucible body 171 can also be formed through the above-mentioned heat dissipation holes 123. The upper part of the crucible body 171 (the area close to the heat dissipation holes 123) can be radiated and dissipated through the heat dissipation holes 123, while the middle and lower parts of the crucible body 171 (the area far from the heat dissipation holes 123) lose relatively less heat through the heat dissipation holes 123. The upper part of the crucible body 171 has a lower temperature than the middle and lower parts of the crucible body 171, thereby forming an axial temperature gradient of the crucible body 171. The axial temperature gradient of the crucible body 171 has a preset corresponding relationship with the axial temperature gradient of the furnace body 100, and the preset corresponding relationship can be calculated from experimental data; of course, the axial temperature gradient of the crucible body 171 can also be directly measured by a temperature sensor.

[0038] The heat preservation tube 172 is arranged in the heat preservation space, the crucible body 171 and the first heating element 173 are both arranged in the heat preservation tube 172, the first heating element 173 can be used to heat the side of the crucible body 171, the bearing part 175 is passed through the mounting hole of the lower cover 130, and one end of the bearing part 175 is connected to the bottom of the crucible body 171 to support the crucible body 171, and the second heating element 174 is connected to the bearing part 175, and the second heating element 174 is used to heat the bottom of the crucible body 171. Considering the convenience of loading the furnace body 100, the crucible body 171 can be loaded in and out of the furnace body 100 in a bottom loading manner, and the crucible body 171, the bearing part 175, the lower cover 130 and the third heat preservation layer 160 can be regarded as a whole, which is driven to lift and lower by the lifting mechanism to complete the furnace loading and opening.

[0039] Please refer to Figures 1 to 10 The embodiment of the present application also discloses a semiconductor process equipment. The disclosed semiconductor process equipment includes the above-mentioned crystal growth furnace. In addition, the semiconductor process equipment may also include a manipulator and a loading device that cooperate with the crystal growth furnace.

[0040] As described above, it can be seen that the crystal growth furnace and semiconductor process equipment disclosed in the embodiments of the present application improve the relevant technologies. The disclosed crystal growth furnace includes a furnace body 100 and a temperature gradient adjustment device 200; the furnace body 100 includes an upper cover 120, and the thickness direction of the upper cover 120 is defined as a first direction 300. The upper cover 120 is provided with heat dissipation holes 123 that penetrate the upper cover 120 along the first direction 300. The temperature gradient adjustment device 200 is arranged in the furnace body 100, and the temperature gradient adjustment device 200 includes a plurality of heat insulation plates 21 0, a plurality of heat-insulating disks 210 are arranged along a first direction 300; the heat-insulating disks 210 are provided with through holes 211 penetrating the heat-insulating disks 210 along the first direction 300, and the apertures of the through holes 211 corresponding to the plurality of heat-insulating disks 210 are not completely the same, the plurality of through holes 211 are sequentially connected along the first direction 300 to form a heat dissipation channel 212, the heat dissipation channel 212 is connected with the heat dissipation holes 123, and the heat inside the furnace body 100 can be transferred to the outside of the furnace body 100 through the heat dissipation channel 212 and the heat dissipation window. The above-mentioned temperature gradient regulating device 200 can control the heat discharged from the furnace body 100 from the heat dissipation channel 212 by changing the arrangement order of multiple insulation disks 210 and / or changing the position of the insulation disks 210 along the first direction 300, so as to adjust the axial temperature gradient of the furnace body 100. Moreover, since the arrangement order and setting position combination of the multiple insulation disks 210 are relatively diverse, the axial temperature gradient of the furnace body 100 can be flexibly adjusted according to different process requirements, thereby improving the adjustment window of the temperature gradient.

[0041] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different technical features between the various embodiments are not contradictory, they can be combined to form more specific embodiments. Considering the simplicity of the text, they will not be repeated here.

[0042] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A crystal growth furnace, characterized in that: It comprises a furnace body (100) and a temperature gradient regulating device (200); The furnace body (100) comprises an upper cover (120), the upper cover (120) is provided with a heat dissipation hole (123) penetrating the upper cover along a first direction, the temperature gradient adjustment device (200) is arranged in the furnace body (100), the temperature gradient adjustment device (200) comprises a plurality of heat insulation plates (210), and the plurality of heat insulation plates (210) are arranged along the first direction (300); The heat insulation disk (210) is provided with a through hole (211) penetrating the heat insulation disk (210) along the first direction (300), and the apertures of the through holes (211) corresponding to the plurality of heat insulation disks (210) are not completely the same, and the plurality of through holes (211) are sequentially connected along the first direction (300) to form a heat dissipation channel (212), and the heat dissipation channel (212) is connected to the heat dissipation hole (123); The temperature gradient adjustment device (200) is configured to adjust the axial temperature gradient of the furnace body (100) by changing the arrangement order of the plurality of heat insulation disks (210) and / or changing the position of the heat insulation disks (210) along the first direction (300); Wherein, the first direction (300) is the thickness direction of the upper cover (120).

2. The crystal growth furnace according to claim 1, characterized in that: The temperature gradient regulating device (200) further comprises a heat insulating tube (220), wherein the heat insulating tube (220) is arranged in the furnace body (100), and the heat insulating tube (220) comprises a first end and a second end opposite to each other along the first direction (300), wherein both the first end and the second end are provided with openings, the first end is close to the heat dissipation hole (123) and connected to the upper cover (120), and the second end is away from the heat dissipation hole (123); The plurality of heat-insulating plates (210) are movably arranged in the heat-insulating cylinder (220) along the first direction (300), and the periphery of the heat-insulating plates (210) is in contact with the inner wall of the heat-insulating cylinder (220).

3. The crystal growth furnace according to claim 2, characterized in that: At least two of the plurality of heat insulation disks (210) are stacked along the first direction (300), and the apertures of the at least two stacked heat insulation disks (210) increase along the first direction to form a stepped heat dissipation channel (212).

4. The crystal growth furnace according to claim 2, characterized in that: The temperature gradient regulating device (200) further comprises a heat-insulating ring (230), wherein the heat-insulating ring (230) is extended along the first direction (300) and is in contact with the inner wall of the heat-insulating cylinder (220), and an end surface of the heat-insulating ring (230) is connected to a disk surface of the heat-insulating disk (210) to support the heat-insulating disk (210).

5. The crystal growth furnace according to claim 4, characterized in that: The end surface of the heat insulation ring (230) is connected to the disk surface of the heat insulation disk (210) facing away from the heat dissipation hole (123), so as to support the heat insulation disk (210) on the first end of the heat insulation cylinder (220).

6. The crystal growth furnace according to claim 4, characterized in that: The end surface of the heat insulation ring (230) is connected to the disk surface of the heat insulation disk (210) facing the heat dissipation hole (123), so as to support the heat insulation disk (210) on the second end of the heat insulation cylinder (220).

7. The crystal growth furnace according to claim 4, characterized in that: The insulation rings (230) are provided on both sides of the insulation disk (210) along the first direction (300), and the two insulation rings (230) are respectively connected to two opposite disk surfaces of the insulation disk (210) to support the insulation disk (210) between the first end and the second end of the insulation tube (220).

8. The crystal growth furnace according to claim 2, characterized in that: The furnace body (100) further comprises a shell (110) and a lower cover (130), wherein the upper cover (120) and the lower cover (130) are respectively arranged to cover openings at both ends of the shell (110) to enclose a process space, and the temperature gradient adjustment device (200) is arranged in the process space; The first end of the heat-insulating cylinder (220) is connected to a surface of the upper cover (120) close to the process space.

9. The crystal growth furnace according to claim 8, characterized in that: The upper cover (120) comprises an upper cover body (121), a cooling pipe (122) and a detection window (124); the heat dissipation hole (123) is opened in the upper cover body (121); the cooling pipe (122) is arranged outside the furnace body (100); a first pipe opening of the cooling pipe (122) is communicated with the heat dissipation hole (123); the detection window (124) is arranged at a second pipe opening of the cooling pipe (122) and is sealedly connected to the cooling pipe (122); and a water cooling interlayer (1221) is provided on the pipe wall of the cooling pipe (122); The projections of the heat dissipation channel (212), the heat dissipation hole (123) and the detection window (124) along the first direction (300) at least partially overlap.

10. The crystal growth furnace according to claim 9, characterized in that: The cooling tube (122) comprises an inner tube (1222) and an outer tube (1223); the outer tube (1223) is sleeved outside the inner tube (1222) and forms the water-cooling interlayer (1221) together with the inner tube (1222); the diameter of the inner tube (1222) gradually decreases in a direction away from the detection window (124) to a direction close to the detection window (124).

11. The crystal growth furnace according to claim 8, characterized in that: The furnace body (100) further comprises a first thermal insulation layer (140), a second thermal insulation layer (150), a third thermal insulation layer (160) and a crucible assembly (170), wherein the first thermal insulation layer (140) is arranged on the inner wall of the shell (110), the second thermal insulation layer (150) is arranged on the surface of the upper cover (120) close to the process space, and the second thermal insulation layer (150) is arranged around the outer side of the thermal insulation cylinder (220), and the third thermal insulation layer (160) is arranged on the surface of the lower cover (130) close to the process space; When the upper cover (120) and the lower cover (130) are respectively covered with the shell (110), the first thermal insulation layer (140), the second thermal insulation layer (150), and the third thermal insulation layer (160) together form a thermal insulation space for accommodating the crucible assembly (170).

12. The crystal growth furnace according to claim 11, characterized in that: A stepped contact surface is provided between the first thermal insulation layer (140) and the third thermal insulation layer (160); the first thermal insulation layer (140) and the third thermal insulation layer (160) are both provided with a labyrinth groove (180) at the contact surface, and are mutually clamped via the labyrinth groove (180).

13. The crystal growth furnace according to claim 12, characterized in that: The furnace body (100) further comprises an elastic heat insulating member (190), wherein the elastic heat insulating member (190) is arranged in the labyrinth groove (180).

14. The crystal growth furnace according to claim 11, characterized in that: The first thermal insulation layer (140) comprises a plurality of sub-thermal insulation layers (141) stacked and arranged along the first direction (300), and gaps between adjacent sub-thermal insulation layers (141) are matched to form a flow gap (142); An exhaust passage (143) is provided between the first thermal insulation layer (140) and the inner wall of the shell (110), and the flow gap (142) is in communication with the exhaust passage (143).

15. The crystal growth furnace according to claim 11, characterized in that: The crucible assembly (170) comprises a crucible body (171), a heat-insulating cylinder (172), a first heating element (173), a second heating element (174) and a bearing portion (175); The heat-insulating cylinder (172) is arranged in the heat-insulating space, the crucible body (171) and the first heating element (173) are both arranged in the heat-insulating cylinder (172), the first heating element (173) is used to heat the side of the crucible body (171), the bearing portion (175) is passed through the mounting hole of the lower cover (130), and one end of the bearing portion (175) is connected to the bottom of the crucible body (171), and the second heating element (174) is connected to the bearing portion (175) and is used to heat the bottom of the crucible body (171).

16. A semiconductor process equipment, characterized in that: Comprising the crystal growth furnace described in any one of claims 1-15.

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