Integrated sensor and manufacturing method thereof

Abstract

The invention discloses an integrated sensor and a manufacturing method thereof, and belongs to the technical field of semiconductors. The at least one pressure sensor is arranged on the substrate; the at least one temperature sensor and the pressure sensor are arranged on the substrate at an interval; the height of the temperature sensor on the substrate is lower than the height of the pressure sensor on the substrate. According to the integrated sensor and the manufacturing method thereof, the pressure sensor and the temperature sensor can be integrated on the same substrate, measurement of temperature and pressure parameters can be completed at the same time, the application range of the sensor is expanded, and the accuracy, reliability and safety of testing are improved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to an integrated sensor and a manufacturing method thereof. Background Art

[0002] Semiconductor sensors have the advantages of high sensitivity, miniaturization and integration, low power consumption and low price, and are widely used in industrial automation, environmental monitoring, medical health and other fields. With the continuous development of microelectronics technology, micro-electromechanical technology, etc., sensors can achieve smaller size, more performance integration, and the preparation process is becoming more mature, which is the main development direction of current sensor technology. Integrated sensors integrate different types of sensor units on a single sensor chip, which can measure multiple physical quantities at the same time.

[0003] However, as devices adapt differently in different environments, such as high temperature, high corrosion and other harsh environments, devices based on silicon will be limited in such application scenarios. As a third-generation wide bandgap semiconductor material, silicon carbide (SiC) can meet the requirements of these complex and harsh environments with its high thermal conductivity, high stability and high electron mobility, and has good application prospects in the preparation of integrated sensors. However, the technology of integrating temperature sensors and pressure sensors based on silicon carbide has not yet appeared. Summary of the invention

[0004] The purpose of the present invention is to provide an integrated sensor and a method for manufacturing the same. Through the integrated sensor and the method for manufacturing the same provided by the present invention, a pressure sensor and a temperature sensor can be integrated on the same substrate, and the measurement of temperature and pressure parameters can be completed simultaneously, thereby expanding the application range of the sensor and improving the accuracy, reliability and safety of the test.

[0005] In order to solve the above technical problems, the present invention provides an integrated sensor, which at least comprises the following steps:

[0006] substrate;

[0007] at least one pressure sensor disposed on the substrate; and

[0008] At least one temperature sensor is disposed on the substrate at a distance from the pressure sensor; a height of the temperature sensor on the substrate is lower than a height of the pressure sensor on the substrate.

[0009] In an embodiment of the present invention, the pressure sensor includes a first sensing section and a first metal electrode, and the first metal electrode extends from two sides of the top of the first sensing section to the substrate respectively.

[0010] In one embodiment of the present invention, the temperature sensor includes a second sensing section and a second metal electrode, the second metal electrode extends from both sides of the top of the second sensing section to the substrate respectively, and the thickness of the second sensing section is smaller than that of the first sensing section.

[0011] In one embodiment of the present invention, the substrate is an intrinsic silicon carbide layer, the first sensing portion and the second sensing portion are N-type silicon carbide layers, and the doping concentration of the N-type silicon carbide layer is 1×10 18 atoms / cm 3 ~1×10 19 atoms / cm 3 .

[0012] In one embodiment of the present invention, the pressure sensors and the temperature sensors are arranged in a linear, grid, staggered or layered manner.

[0013] The present invention also provides a method for manufacturing an integrated sensor, which comprises at least the following steps:

[0014] providing a substrate;

[0015] forming at least one pressure sensor on the substrate; and

[0016] At least one temperature sensor is formed on the substrate. The temperature sensor and the pressure sensor are arranged on the substrate at a distance. The height of the temperature sensor on the substrate is lower than the height of the pressure sensor on the substrate.

[0017] In one embodiment of the present invention, the manufacturing method further includes:

[0018] providing a substrate;

[0019] forming a sensing layer on the substrate;

[0020] forming a first patterned photoresist layer on the sensing layer;

[0021] Using the first patterned photoresist layer as a mask, etching a portion of the sensing layer to the substrate to form a first sensing section and a second sensing section separated from each other;

[0022] removing the first patterned photoresist layer, and forming a second patterned photoresist layer on the first sensing sub-section, the second sensing sub-section, and the substrate, wherein the second patterned photoresist layer exposes the second sensing sub-section; and

[0023] The second sensing portion is thinned.

[0024] In one embodiment of the present invention, the thickness of the second sensing portion is one third to two thirds of the thickness of the first sensing portion.

[0025] In one embodiment of the present invention, the manufacturing method further includes:

[0026] forming a metal layer on the substrate, and on the top and sidewalls of the first sensing section and the second sensing section;

[0027] forming a third patterned photoresist layer on the metal layer, wherein the third patterned photoresist layer exposes a portion of the metal layer on the substrate, the first sensing section, and the second sensing section; and

[0028] The metal layer is etched using the third patterned photoresist layer as a mask to form a first metal electrode and a second metal electrode.

[0029] In one embodiment of the present invention, the material of the metal layer is at least one of nickel, titanium, gold or platinum, and the thickness of the metal layer is 40 nm to 70 nm.

[0030] In one embodiment of the present invention,

[0031] In summary, the present invention provides an integrated sensor and a method for manufacturing the same. By improving the integrated sensor and the method for manufacturing the same, a pressure sensor and a temperature sensor can be integrated on the same substrate to form a chip, which can simultaneously complete the measurement of temperature and pressure parameters, thereby expanding the application range of the sensor. The manufacturing process can be simplified, the process preparation steps can be reduced, the processing and manufacturing costs of the sensor can be compressed, and the manufacturing efficiency can be improved. The interference of the pressure sensor and the temperature sensor can be avoided, and the accuracy of the test can be improved. The reliability problems of heterogeneous materials and electrical connection reliability problems existing in metal thermocouples, thermal resistors, and Schottky temperature sensors can be avoided, and the reliability and safety of the integrated sensor can be improved.

[0032] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for describing the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0034] Figure 1 Schematic diagram of an integrated sensor in one embodiment.

[0035] Figure 2 For along Figure 1 Schematic diagram of the sensing layer formed in the AA direction.

[0036] Figure 3For along Figure 1 Schematic diagram of forming a first patterned photoresist layer in the AA direction.

[0037] Figure 4 For along Figure 1 Schematic diagram of forming the first sensing division and the second sensing division in the AA direction.

[0038] Figure 5 For along Figure 1 Schematic diagram of forming a second patterned photoresist layer in the AA direction.

[0039] Figure 6 For along Figure 1 Schematic diagram of thinning the second sensing section in the AA direction.

[0040] Figure 7 For along Figure 1 Schematic diagram of forming a metal layer in the AA direction.

[0041] Figure 8 For along Figure 1 Schematic diagram of forming a third patterned photoresist layer in the AA direction.

[0042] Fig. 9 For along Figure 1 Schematic diagram of forming the first metal electrode and the second metal electrode in the AA direction.

[0043] Description of labels:

[0044] 10. Substrate; 11. Sensing layer; 111. First sensing section; 112. Second sensing section; 12. First patterned photoresist layer; 121. First opening; 13. Second patterned photoresist layer; 131. Second opening; 14. Metal layer; 141. First metal electrode; 142. Second metal electrode; 15. Third patterned photoresist layer; 151. Third opening; 16. Pressure sensor; 17. Temperature sensor. DETAILED DESCRIPTION

[0045] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0046] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0047] In the present invention, it should be noted that, if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, if the terms "first" and "second" appear, they are only used for description and distinction purposes, and cannot be understood as indicating or implying relative importance.

[0048] Among the designs of many sensors based on SiC materials, pressure sensors or temperature sensors have corresponding technical solutions. Among them, the design of SiC pressure sensors is mainly based on piezoresistive and capacitive technical solutions: the piezoresistive type uses the piezoresistive effect of SiC materials. When SiC is subjected to pressure, its resistivity will change; the capacitive type changes the distance or dielectric constant between the SiC capacitor plates by pressure, and obtains pressure information through the change of capacitance value. SiC temperature sensors mainly have thermal resistor type and diode type technical solutions: the thermal resistor type uses the resistance value of SiC material to change with temperature, and obtains temperature information by measuring the resistance value; the diode type uses the relationship between the voltage and temperature of the SiC diode to determine the temperature by measuring the voltage. However, for SiC materials, the design of integrated temperature sensors and pressure sensors is relatively difficult. The present invention proposes an integrated sensor and a method for manufacturing the same sensor, which has a simple manufacturing process and can integrate and manufacture a pressure sensor based on a piezoresistor and a temperature sensor based on a thermal resistor on the same SiC substrate to form a chip, and simultaneously complete the measurement of temperature and pressure parameters.

[0049] See also Figure 1As shown, in one embodiment of the present invention, the present invention provides an integrated sensor including a substrate 10, at least one pressure sensor 16 and at least one temperature sensor 17 disposed on the substrate 10, etc. The height of the temperature sensor 17 on the substrate 10 is lower than the height of the pressure sensor 16 on the substrate 10, and the present application does not limit the relative positions of the pressure sensor 16 and the four temperature sensors 17. In this embodiment, the integrated sensor includes, for example, one pressure sensor 16 and four temperature sensors 17, and the temperature sensors 17 are symmetrically disposed on both sides of the pressure sensor 16. In other embodiments, the number and arrangement of the pressure sensors 16 and the temperature sensors 17 are arranged according to the use environment, such as in a linear, grid, staggered or layered arrangement.

[0050] See also Figure 1 As shown, in one embodiment of the present invention, the pressure sensor 16 includes a first sensing section 111 and a first metal electrode 141, and the first metal electrode 141 extends from both sides of the top of the first sensing section 111 to the substrate 10, and the temperature sensor 17 includes a second sensing section 112 and a second metal electrode 142, and the second metal electrode 142 extends from both sides of the top of the second sensing section 112 to the substrate 10. In the present application, the pressure sensor 16 and the temperature sensor 17 have simple structures and can simultaneously complete the measurement of temperature and pressure parameters, thereby expanding the application range of SiC-based sensors. In the present application, the pressure sensor 16 and the temperature sensor 17 are simple in structure and can simultaneously complete the measurement of temperature and pressure parameters, thereby expanding the application range of SiC-based sensors. Figure 1 Taking the cross-sectional view in the AA direction in FIG as an example, the manufacturing method of the integrated sensor is explained.

[0051] See also Figure 2 As shown, in one embodiment of the present invention, the substrate 10 is, for example, a silicon carbide substrate, and is, for example, an intrinsic silicon carbide substrate, and the thickness of the substrate 10 is not specifically limited and is selected according to the manufacturing requirements. A sensing layer 11 is formed on the substrate 10, and the sensing layer 11 is, for example, an N-type silicon carbide layer, and the N-type silicon carbide layer is, for example, formed by chemical vapor deposition (Chemical Vapor Deposition, CVD) or epitaxial growth to form a silicon carbide layer, and then obtained by ion implantation. In other embodiments, the doped ions in the sensing layer 11 are formed, for example, by coprecipitation.

[0052] See also Figure 2As shown, in one embodiment of the present invention, a silicon carbide substrate is placed in a transfer chamber filled with inert gas, and is transferred to a silicon carbide CVD reaction chamber in a hydrogen atmosphere by a robotic arm, and the reaction chamber has an initial pressure and an initial temperature. Hydrogen is continuously introduced into the reaction chamber, and the temperature and pressure of the reaction chamber are set to a first temperature and a first pressure. After the temperature and pressure of the reaction chamber gradually reach the set value and stabilize, they are maintained for a period of time, and a carbon source and a silicon source are used as growth source gases. If the silicon source is liquid, the liquid silicon source is stored in a bubbler, and hydrogen is introduced into the bubbler, and the hydrogen carries the silicon source into the reaction chamber. The carbon source includes but is not limited to at least one of propane, ethylene, methyl chloride or methane, the silicon source includes but is not limited to at least one of silane, trichlorosilane, dichlorosilane, silicon tetrachloride or methyl silicon trichloride, the initial pressure of the reaction chamber is, for example, 800 mbar to 1200 mbar, the initial temperature is, for example, 500°C to 700°C, the first temperature is, for example, 1600°C to 1700°C, the first pressure is, for example, 50 mbar to 300 mbar, the flow rate of hydrogen is, for example, 50 sccm to 200 sccm, the gas flow rate of the carbon source is, for example, 50 sccm to 200 sccm, and the amount of carbon source and silicon source introduced maintains a C / Si molar ratio of, for example, 0.9 to 1.3. The thickness of the formed sensing layer 11 is controlled by controlling the deposition time. The thickness of the sensing layer 11 is not limited in the present application. In the present embodiment, the thickness of the sensing layer 11 is, for example, 800 nm to 1200 nm. After the deposition is completed, the silicon carbide layer is doped, for example, by ion implantation, and the doping ions are, for example, N-type ions such as nitrogen or phosphorus, and the doping concentration is, for example, 1×10 18 atoms / cm 3 ~1×10 19 atoms / cm 3 (Abbreviated as cm -3 ). By controlling the doping concentration, the sensitivity of the sensor can be controlled. By selecting a silicon carbide substrate, the sensing layer 11 and the substrate 10 are made of the same material. When forming the sensing layer 11, the preparation of the buffer layer and the like can be reduced, the process preparation steps can be reduced, the processing and manufacturing cost of the sensor can be reduced, and the manufacturing efficiency can be improved.

[0053] See also Figures 2 to 3 As shown, in one embodiment of the present invention, after the sensing layer 11 is formed, a photoresist layer is formed on the sensing layer 11, and a first patterned photoresist layer 12 is formed through processes such as exposure and development. The first patterned photoresist layer 12 includes a plurality of first openings 121, and the first openings 121 expose a portion of the sensing layer 11. The first patterned photoresist layer 12 is used to define the position of the sensor.

[0054] See also Figure 3 to Figure 4As shown, in one embodiment of the present invention, the first patterned photoresist layer 12 is used as a mask and the substrate 10 is used as an etching stop layer. For example, wet etching, dry etching, or a combination of dry etching and wet etching are used to perform etching in the direction of the substrate 10 to remove part of the sensing layer 11 to form a plurality of first sensing divisions 111 and a plurality of second sensing divisions 112 to locate the number and position of the pressure sensor and the temperature sensor. In this embodiment, for example, dry etching is used to remove part of the sensing layer 11, and the etching gas, for example, includes chlorine (Cl 2 ), sulfur hexafluoride (SF 6 ), nitrogen trifluoride (NF 3 ) or carbon tetrafluoride (CF 4 ) or a mixture of them and oxygen (O 2 In this embodiment, after the first sensing sub-portion 111 and the plurality of second sensing sub-portions 112 are formed, the first patterned photoresist layer 12 is removed by wet cleaning or ashing.

[0055] See also Figures 4 to 5 As shown, in one embodiment of the present invention, after removing the first patterned photoresist layer 12, a photoresist layer is formed on the first sensing division 111, the second sensing division 112 and the substrate 10, and after processes such as exposure and development, a second patterned photoresist layer 13 is formed. The second patterned photoresist layer 13 includes a plurality of second openings 131, and the second openings 131 expose the second sensing division 112. The second patterned photoresist layer 13 is used as a photoresist for thinning the second sensing division 112.

[0056] See also Figure 5 to Figure 6 As shown, in one embodiment of the present invention, the second patterned photoresist layer 13 is used as a mask, for example, wet etching, dry etching, or a combination of dry etching and wet etching is used to thin the second sensing sub-section 112, so that the height of the temperature sensor is lower than the height of the pressure sensor, which can avoid mutual interference between the pressure sensor and the temperature sensor and improve the accuracy of the test. In this embodiment, for example, dry etching is used to thin the second sensing sub-section 112, and the etching gas, for example, includes one or a mixture of chlorine, sulfur hexafluoride, nitrogen trifluoride or carbon tetrafluoride, or a mixture of them and oxygen. In this embodiment, after the second sensing sub-section 112 is thinned, the second patterned photoresist layer 13 is removed by wet cleaning or ashing. The present application does not limit the thickness relationship between the first sensing sub-section 111 and the second sensing sub-section 112, and the thickness of the second sensing sub-section 112 is less than the thickness of the first sensing sub-section 111. In a specific embodiment of the present invention, the thickness of the second sensing sub-section 112 is, for example, one third to two thirds of the thickness of the first sensing sub-section 111.

[0057] See also Figure 6 to Figure 7As shown, in one embodiment of the present invention, after the second sensing sub-portion 112 is thinned, a metal layer 14 is formed on the substrate 10, the top and the sidewalls of the first sensing sub-portion 111 and the second sensing sub-portion 112. The material of the metal layer 14 is, for example, nickel (Ni), titanium (Ti), gold (Au) or platinum (Pt), and the thickness of the metal layer 14 is, for example, 40nm to 70nm. The metal layer 14 is deposited by, for example, physical vapor deposition or electroplating.

[0058] See also Figures 7 and 8 As shown, in one embodiment of the present invention, after the metal layer 14 is formed, a photoresist layer is formed on the metal layer 14, and after processes such as exposure and development, a third patterned photoresist layer 15 is formed. The third patterned photoresist layer 15 includes a plurality of third openings 151, and the third openings 151 expose a portion of the metal layer 14 on the substrate 10, the first sensing division 111, and the second sensing division 112, so as to remove a portion of the metal layer 14 to form a metal electrode.

[0059] See also Figures 8 to 9 As shown, in one embodiment of the present invention, after forming the third patterned photoresist layer 15, the third patterned photoresist layer 15 is used as a mask, and the substrate 10, the first sensing sub-portion 111 and the second sensing sub-portion 112 are used as etching stop layers, for example, wet etching, dry etching or a combination of dry etching and wet etching are used to etch the metal layer 14 to form the first metal electrode 141 and the second metal electrode 142. In this embodiment, for example, a portion of the metal layer 14 is removed by dry etching, and the etching gas is, for example, oxygen, argon (Ar), nitrogen (N 2 ), hydrogen bromide (HBr) or boron trichloride (BCl 3 ) or a mixture of the above. After etching, the first metal electrode 141 extends from both sides of the top of the first sensing division 111 to the substrate 10, covering part of the first sensing division 111, the sidewall of the first sensing division 111 and part of the substrate 10. The first metal electrodes 141 on the first sensing division 111 are arranged at intervals, and the first metal electrodes 141 and the first sensing division 111 constitute a pressure sensor 16. The second metal electrode 142 extends from both sides of the top of the second sensing division 112 to the substrate 10, covering part of the second sensing division 112, the sidewall of the second sensing division 112 and part of the substrate 10. The second metal electrodes 142 on the second sensing division 112 are arranged at intervals, and the second metal electrodes 142 and the second sensing division 112 constitute a temperature sensor 17. Through the manufacturing method of the present application, the pressure sensor 16 and the temperature sensor 17 can be integrated on the same substrate. The structure of the integrated sensor is simple, the manufacturing process is simplified, and the measurement of temperature and pressure parameters can be completed at the same time, thereby improving the application range of the integrated sensor.

[0060] See also Figure 1and Fig. 9 As shown, in one embodiment of the present invention, in the pressure sensor 16, the first metal electrodes 141 on both sides of the first sensing section 111 are respectively used as the positive electrode and the negative electrode of the pressure sensor 16. In the temperature sensor 17, the second metal electrodes 142 on both sides of the second sensing section 112 are respectively used as the positive electrode and the negative electrode of the temperature sensor 17. The SiC-based integrated sensor obtained in the present application can avoid the heterogeneous material reliability problem and electrical connection reliability problem existing in metal thermocouples, thermal resistors and Schottky temperature sensors, and improve the reliability and safety of the integrated sensor.

[0061] In one embodiment of the present invention, the basic principle of the SiC-based temperature sensor is the impurity ionization theory. In the doped silicon carbide layer, the impurity ionization energy of the doped ions in the silicon carbide is relatively large, and the impurities will be incompletely ionized at room temperature. The incomplete ionization model is expressed by the following formula:

[0062]

[0063] Where k is the Boltzmann constant (eV / K), T is the absolute temperature (K), is the concentration of ionized donor impurities (cm -3 ), is the concentration of ionized acceptor impurities (cm -3 ), N D is the actual donor impurity concentration (cm -3 ), N A is the actual acceptor impurity concentration (cm -3 ), g D and g A are the donor and acceptor impurity level degeneracy factors (usually set to 2 and 4), G D (T) and G A (T) are the donor impurity ionization factor and the acceptor impurity ionization factor, E Fn and E Fp are the electron and hole Fermi levels, E C and E V are the bottom energy level of the conduction band and the top energy level of the valence band, respectively. D and E A are the impurity energy levels of the donor and acceptor atoms, ΔE D and ΔE A are the donor impurity ionization energies and the acceptor impurity ionization energies, respectively.

[0064] At the same time, the intrinsic carrier concentration n i for:

[0065]

[0066] Among them, A is a constant related to the material, Eg is the bandgap width, k is the Boltzmann constant, and T is the absolute temperature.

[0067] For N-type SiC materials, the carrier concentration n can be obtained from the electrical neutrality condition:

[0068]

[0069] At the same time, the expression of mobility μ is:

[0070] μ=μ 0 T -m

[0071] Among them, μ 0 is the mobility related to bulk phonon scattering, T is the absolute temperature, and m is a constant related to the material and the scattering mechanism.

[0072] After obtaining the carrier concentration and mobility, the conductivity can be calculated according to the following formula:

[0073] σ=nqμ

[0074] Among them, σ is the conductivity, n is the carrier concentration, q is the carrier charge, and μ is the carrier mobility.

[0075] See also Figure 1 and Fig. 9 As shown, in one embodiment of the present invention, for a SiC-based temperature sensor, the basic measurement method is achieved by measuring resistance. It is obtained by the formula:

[0076]

[0077] Where R is the resistance, l is the length of the sensing region between the metal electrodes, σ is the conductivity of the sensing region material, and S is the cross-sectional area of ​​the sensing region between the metal electrodes.

[0078] The basic principle of SiC pressure sensor is scattering theory. When pressure is applied to SiC film, its internal lattice structure will be distorted, causing changes in acoustic phonon scattering and ionized impurity scattering, thereby causing changes in carrier mobility. This causes changes in resistivity, and the relationship between resistance and stress is: Where ρ is the resistivity of the material in the initial state, Δρ is the change in resistivity of the material after stress is applied, R is the resistance value of the material in the initial state, ΔR is the change in resistance value of the material after stress is applied, π is the piezoresistance coefficient of the material, and F is the stress on the material.

[0079] See also Figure 1 and Fig. 9As shown, in one embodiment of the present invention, during the use of the integrated sensor, when the pressure changes, the lattice structure of the first sensing division 111 will change, thereby affecting its resistivity and resistance value. By measuring the change in resistance value through the first metal electrode 141, the pressure measurement can be achieved. When the temperature changes, the carrier concentration in the second sensing division 112 will change, and the resistance value measured by the second metal electrodes 142 on both sides will also change accordingly. By measuring the change in resistance value, the temperature measurement can be achieved. However, since the first sensing division 111 will also be affected by the temperature change, therefore, in the design process, the first sensing division 111 is higher than the second sensing division 112. In the packaging process, for example, the temperature sensor 17 and the pressure sensor 16 are packaged separately to avoid the influence of pressure on the temperature sensor 17. During the test, the resistance value is tested through the first metal electrode 141 and the second metal electrode 142 respectively, and the temperature and pressure changes are obtained according to the test results. Specifically, if the changes in the resistance values ​​measured by the first metal electrode 141 and the second metal electrode 142 are similar, the temperature change is obtained based on the resistance values ​​measured by the first metal electrode 141 and the second metal electrode 142, and there is basically no pressure change; if the changes in the resistance values ​​measured by the first metal electrode 141 and the second metal electrode 142 are significantly different, the temperature change is obtained based on the change in the resistance value of the second metal electrode 142, and the pressure change is obtained based on the difference in the resistance values ​​measured by the first metal electrode 141 and the second metal electrode 142; if the resistance value measured by the first metal electrode 141 changes, and the resistance value measured by the second metal electrode 142 does not change substantially, the pressure change is obtained based on the resistance value measured by the first metal electrode 141, and there is basically no temperature change. That is, during the measurement process, the changes in temperature and pressure can be obtained respectively based on the resistance values ​​measured by the pressure sensor and the temperature sensor.

[0080] See also Figure 1 and Fig. 9 As shown, in one embodiment of the present invention, for example, polydimethylsiloxane (PDMS) is used to encapsulate the integrated sensor, and the obtained integrated sensor is used in a lithium-ion battery, so that the performance of the integrated sensor working under the electrolyte is more stable, and the changes in temperature and pressure can be monitored in time, thereby improving the safety performance of the lithium-ion battery.

[0081] In summary, the present invention provides an integrated sensor and a method for manufacturing the same. By improving the integrated sensor and the method for manufacturing the same, a pressure sensor and a temperature sensor can be integrated on the same substrate to form a chip, which can simultaneously complete the measurement of temperature and pressure parameters, thereby expanding the application range of the sensor. The manufacturing process can be simplified, the process preparation steps can be reduced, the processing and manufacturing costs of the sensor can be compressed, and the manufacturing efficiency can be improved. The interference of the pressure sensor and the temperature sensor can be avoided, and the accuracy of the test can be improved. The reliability problems of heterogeneous materials and electrical connection reliability problems existing in metal thermocouples, thermal resistors, and Schottky temperature sensors can be avoided, and the reliability and safety of the integrated sensor can be improved.

[0082] References throughout the specification to "one embodiment," "an embodiment," or "a specific embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention, and not necessarily in all embodiments. Thus, various appearances of the phrases "in one embodiment," "in an embodiment," or "in a specific embodiment" in different places throughout the specification do not necessarily refer to the same embodiment. In addition, the particular features, structures, or characteristics of any specific embodiment of the invention may be combined with one or more other embodiments in any suitable manner. It should be understood that other variations and modifications of the embodiments of the invention described and illustrated herein may be possible in light of the teachings herein and are to be considered part of the spirit and scope of the invention.

[0083] It should also be understood that the embodiments of the present invention disclosed above are only used to help illustrate the present invention. The embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. An integrated sensor, characterized in that: At least: substrate; at least one pressure sensor disposed on the substrate; and At least one temperature sensor is disposed on the substrate at a distance from the pressure sensor; a height of the temperature sensor on the substrate is lower than a height of the pressure sensor on the substrate.

2. An integrated sensor according to claim 1, characterized in that: The pressure sensor comprises a first sensing section and a first metal electrode, wherein the first metal electrode extends from two sides of the top of the first sensing section to the substrate respectively.

3. An integrated sensor according to claim 2, characterized in that: The temperature sensor includes a second sensing section and a second metal electrode. The second metal electrode extends from two sides of the top of the second sensing section to the substrate respectively. The thickness of the second sensing section is smaller than that of the first sensing section.

4. An integrated sensor according to claim 3, characterized in that: The substrate is an intrinsic silicon carbide layer, the first sensing sub-part and the second sensing sub-part are N-type silicon carbide layers, and the doping concentration of the N-type silicon carbide layer is 1×10 18 atoms / cm 3 ~1×10 19 atoms / cm 3 .

5. The integrated sensor according to claim 1, characterized in that: The pressure sensors and the temperature sensors are arranged in a linear, grid, staggered or layered manner.

6. A method for manufacturing an integrated sensor, characterized in that: At least the following steps are included: providing a substrate; forming at least one pressure sensor on the substrate; and At least one temperature sensor is formed on the substrate. The temperature sensor and the pressure sensor are arranged on the substrate at a distance. The height of the temperature sensor on the substrate is lower than the height of the pressure sensor on the substrate.

7. The method for manufacturing an integrated sensor according to claim 6, characterized in that: The production method further comprises: providing a substrate; forming a sensing layer on the substrate; forming a first patterned photoresist layer on the sensing layer; Using the first patterned photoresist layer as a mask, etching a portion of the sensing layer to the substrate to form a first sensing section and a second sensing section separated from each other; removing the first patterned photoresist layer, and forming a second patterned photoresist layer on the first sensing sub-section, the second sensing sub-section, and the substrate, wherein the second patterned photoresist layer exposes the second sensing sub-section; and The second sensing portion is thinned.

8. The method for manufacturing an integrated sensor according to claim 7, characterized in that: The thickness of the second sensing section is one third to two thirds of the thickness of the first sensing section.

9. The method for manufacturing an integrated sensor according to claim 7, characterized in that: The production method further comprises: forming a metal layer on the substrate, and on the top and sidewalls of the first sensing section and the second sensing section; forming a third patterned photoresist layer on the metal layer, wherein the third patterned photoresist layer exposes a portion of the metal layer on the substrate, the first sensing section, and the second sensing section; and The metal layer is etched using the third patterned photoresist layer as a mask to form a first metal electrode and a second metal electrode.

10. The method for manufacturing an integrated sensor according to claim 9, characterized in that: The material of the metal layer is at least one of nickel, titanium, gold or platinum, and the thickness of the metal layer is 40nm-70nm.

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