Wafer defect analysis device and wafer defect analysis method

Abstract

The invention provides a wafer defect analysis device. The wafer defect analysis device comprises a light source, a camera mechanism, a height adjusting mechanism and a processor, the light source is used for placing a wafer and emitting infrared light. The camera shooting mechanism comprises a camera, a microscope objective, a light filtering element and a gain element. The camera faces the light source and is used for shooting the wafer, the microscope objective is located between the camera and the light source, the filter element is located between the camera and the microscope objective, and the gain element is located between the camera and the filter element. The height adjusting mechanism is connected with the camera mechanism and comprises a motor. The processor is in signal connection with the camera mechanism. Wherein the height adjusting mechanism drives the camera mechanism to move in a longitudinal direction, and after the camera mechanism captures an image of the wafer, the image is received and analyzed by the processor so as to analyze defects on the wafer. Therefore, defects can be accurately analyzed. The invention also relates to a wafer defect analysis method.

Description

Technical Field

[0001] The present invention relates to a defect analysis device and a defect analysis method, and in particular to a wafer defect analysis device and a wafer defect analysis method. Background Art

[0002] Technological advances have made single-crystal silicon wafers widely used in the semiconductor and optical industries. However, sub-surface defects are easily generated during the manufacturing process of wafers, which can cause problems with the stability and reliability of subsequent semiconductors. Therefore, it is very important to detect sub-surface defects of wafers.

[0003] A conventional sub-surface defect detection method includes a laser emitter and a detector. The laser emitter projects a laser onto the sub-surface of the wafer at an angle, so that when the laser passes through the defect, it will be scattered and received by the detector. However, the energy of the scattered laser is small and difficult to detect, so it still has its shortcomings in defect detection. In addition, there are other sub-surface defect detection methods, but they all have their detection limitations, such as requiring the sample to be transparent, or requiring the surface roughness of the sample to be inspected to be high, and it is not easy to accurately detect the depth of the defect.

[0004] In view of this, how to improve the device for detecting and analyzing wafer sub-surface defects and enhance its defect detection performance has become a goal of relevant industry players. Summary of the invention

[0005] In order to solve the above problems, the present invention provides a wafer defect analysis device and a wafer defect analysis method, which can improve the performance of defect detection through their structural configuration.

[0006] According to one embodiment of the present invention, a wafer defect analysis device is provided, comprising a light source, a camera mechanism, a height adjustment mechanism and a processor. The light source is used to place a wafer and emit an infrared light. The camera mechanism comprises a camera, a microscope objective lens, a filter element and a gain element. The camera faces the light source and is used to photograph the wafer. The microscope objective lens is located between the camera and the light source, the filter element is located between the camera and the microscope objective lens, and the gain element is located between the camera and the filter element. The height adjustment mechanism is connected to the camera mechanism and comprises a motor. The processor signal is connected to the camera mechanism. Among them, the height adjustment mechanism drives the camera mechanism to move in a longitudinal direction, and the camera mechanism takes an image of the wafer, which is received and analyzed by the processor to analyze a defect on the wafer.

[0007] In this way, infrared light can penetrate the wafer, especially the silicon wafer, so that the camera mechanism can take a real image of the wafer and clearly identify the defects. Furthermore, the camera mechanism can be driven to move in the longitudinal direction by the height adjustment mechanism, and the focus position of the camera mechanism can be moved to focus and take images of different positions of the wafer in the longitudinal direction, which can be more helpful in analyzing the characteristics of the defects, such as analyzing the depth of the defects.

[0008] According to an embodiment of the aforementioned wafer defect analysis device, the wavelength of the infrared light may be between 1100 nm and 1500 nm.

[0009] According to an embodiment of the aforementioned wafer defect analysis device, the motor may have a high-precision stepping motor structure.

[0010] According to an embodiment of the aforementioned wafer defect analysis device, a pattern layer may be further included, and the pattern layer is located between the light source and the wafer.

[0011] According to an embodiment of the aforementioned wafer defect analysis device, the filter element may have a pinhole slit structure.

[0012] According to one embodiment of the present invention, a wafer defect analysis method is provided, comprising an illumination step and a defect depth analysis step. In the illumination step, a wafer is placed on a light source, and an infrared light emitted by the light source penetrates the wafer. In the defect depth analysis step, a motor of a height adjustment mechanism drives a camera mechanism to move toward the wafer in a longitudinal direction, so that the camera mechanism respectively captures multiple images of a photographed area on the wafer at multiple focal positions. The camera mechanism includes a camera, a gain element, a filter element and a microscope objective lens in sequence along the longitudinal direction. A processor confirms a depth of a defect in the photographed area based on the aforementioned multiple focal positions and the aforementioned multiple images.

[0013] According to an embodiment of the wafer defect analysis method, a surface position confirmation step may be further included, wherein the motor drives the camera mechanism to capture an image of a surface of the wafer, find the focal position of the corresponding surface, and confirm a surface position of the wafer.

[0014] According to an embodiment of the aforementioned wafer defect analysis method, in the defect depth analysis step, the surface position can be used as a calculation reference point. When an average grayscale value of one of the aforementioned multiple images is greater than or equal to a threshold, the processor obtains a numerical difference between the focus position and the surface position corresponding to the aforementioned one as the depth of the defect.

[0015] According to an embodiment of the aforementioned wafer defect analysis method, a bottom surface position confirmation step may be further included, wherein a pattern layer is placed between a bottom surface of the wafer and the light source, and a motor drives a camera mechanism to capture an image of the pattern layer to find the focal position of the corresponding pattern layer to confirm a bottom surface position of the wafer.

[0016] According to an embodiment of the wafer defect analysis method, the motor may have a high-precision stepping motor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of the structure of a wafer defect analysis device according to an embodiment of the present invention is shown;

[0018] Figure 2 Draw Figure 1 Different images captured by the wafer defect analysis device of the embodiment at different focal positions; and

[0019] Figure 3 A block flow diagram of a wafer defect analysis method according to another embodiment of the present invention is shown.

[0020] The reference numerals are described as follows:

[0021] 100: Wafer defect analysis device

[0022] 110: Horizontal movement mechanism

[0023] 111: Carrier

[0024] 112: Horizontal slide rail

[0025] 120: Camera mechanism

[0026] 121: Camera

[0027] 122: Gain element

[0028] 123: Filter element

[0029] 124: Microscope objective

[0030] 130: Light source

[0031] 140: Height adjustment mechanism

[0032] 141: Motor

[0033] 142: Longitudinal slide rail

[0034] 143: Controller

[0035] 150: Processor

[0036] 160: Base

[0037] 161: Workbench

[0038] 162: Stand

[0039] 170: Pattern layer

[0040] D1: Defects

[0041] H1: Depth

[0042] L1, L2: light

[0043] P1: Surface position

[0044] P2: Focus position

[0045] P3: Bottom position

[0046] S200: Wafer defect analysis method

[0047] S210: Lighting step

[0048] S220: Bottom surface position confirmation step

[0049] S230: Surface position confirmation step

[0050] S240: Defect depth analysis steps

[0051] W1: Wafer

[0052] X: Horizontal direction

[0053] Z: Vertical DETAILED DESCRIPTION

[0054] Embodiments of the present invention will be described below with reference to the accompanying drawings. For the sake of clarity, many practical details will be described together in the following description. However, the reader should understand that these practical details should not be used to limit the present invention. That is, in some embodiments of the present invention, these practical details are not necessary. In addition, in order to simplify the drawings, some conventional structures and elements will be depicted in a simple schematic manner in the drawings; and repeated elements may be represented by the same number or similar number.

[0055] In addition, in this article, when a certain element (or mechanism or module, etc.) is "connected", "set" or "coupled" to another element, it may refer to that the element is directly connected, directly set or directly coupled to another element, and it may also refer to that a certain element is indirectly connected, indirectly set or indirectly coupled to another element, that is, there are other elements between the element and the other element. When it is clearly stated that a certain element is "directly connected", "directly set" or "directly coupled" to another element, it means that there are no other elements between the element and the other element. The terms first, second, third, etc. are only used to describe different elements or components, and there is no restriction on the elements / components themselves. Therefore, the first element / component can also be renamed as the second element / component. And the combination of elements / components / mechanisms / modules in this article is not a generally known, conventional or conventional combination in this field, and it cannot be determined whether the combination relationship is easy to be easily completed by the general knowledge in the technical field based on whether the elements / components / mechanisms / modules themselves are conventional.

[0056] See also Figure 1 ,in Figure 1 The schematic diagram of the structure of a wafer defect analysis device 100 according to an embodiment of the present invention is shown. The wafer defect analysis device 100 includes a light source 130, a camera mechanism 120, a height adjustment mechanism 140 and a processor 150. The light source 130 is used to place a wafer W1 and emit an infrared light. The camera mechanism 120 includes a camera 121, a microscope lens 124, a filter element 123 and a gain element 122. The camera 121 faces the light source 130 and is used to photograph the wafer W1. The microscope lens 124 is located between the camera 121 and the light source 130. The filter element 123 is located between the camera 121 and the microscope lens 124. The gain element 122 is located between the camera 121 and the filter element 123. The height adjustment mechanism 140 is connected to the camera mechanism 120 and includes a motor 141. The processor 150 is signal-connected to the camera mechanism 120. The height adjustment mechanism 140 drives the camera mechanism 120 to move in a longitudinal direction Z. After the camera mechanism 120 takes an image of the wafer W1 , the image is received and analyzed by the processor 150 to analyze a defect D1 on the wafer W1 .

[0057] In this way, infrared light can penetrate the wafer W1, especially the wafer W1 made of single crystal silicon, so that the camera mechanism 120 can capture a real image of the wafer W1 and clearly identify the defect D1. Furthermore, by driving the camera mechanism 120 to move in the longitudinal direction Z through the height adjustment mechanism 140, the focus position of the camera mechanism 120 can be moved to focus on and capture images of different positions of the wafer W1 in the longitudinal direction Z, which can be more helpful in analyzing the characteristics of the defect D1, such as the depth H1 of the defect D1 (indicated by Figure 2 ). The details of the wafer defect analysis apparatus 100 will be described in detail later.

[0058] The wafer defect analysis device 100 may further include a base 160 and a horizontal moving mechanism 110. The base 160 includes a workbench 161 and a stand 162. The stand 162 is vertically connected to the workbench 161. The horizontal moving mechanism 110 may include a carrier 111 and a horizontal slide rail 112. The horizontal slide rail 112 is fixed on the workbench 161. The carrier 111 is arranged on the horizontal slide rail 112, and can drive the wafer W1 placed thereon to move in the horizontal direction X, and the carrier 111 is preferably made of a transparent material. In other embodiments, the carrier may not be provided, and the light source may be directly provided on the horizontal slide rail, but this is not limited to this. The horizontal slide rail 112 may, for example, have a linear ball slide rail structure, and the slide seat of the horizontal slide rail 112 can be driven to drive the carrier 111 to move relative to the workbench 161. In other embodiments, the wafer defect analysis device may include two horizontal moving mechanisms for driving the wafer to move relative to the workbench in two horizontal directions (for example, a length direction and a width direction that are perpendicular to each other), or one horizontal moving mechanism drives the carrier to move in one horizontal direction, and the other horizontal moving mechanism drives the camera mechanism to move in another horizontal direction, not limited to the above disclosure.

[0059] The height adjustment mechanism 140 may include a motor 141, a longitudinal slide rail 142 and a controller 143. The longitudinal slide rail 142 is disposed on the stand 162. The motor 141 is also disposed on the stand 162. The longitudinal slide rail 142 may have a linear ball slide structure, for example. The controller 143 drives the motor 141 to drive the slide seat of the longitudinal slide rail 142 to move, so that the camera mechanism 120 connected to the slide seat moves in the longitudinal direction Z. Figure 1 In the embodiment, the motor 141 may have a high-precision stepper motor structure, and can accurately control the camera mechanism 120 to move slightly in the longitudinal Z direction, for example, 0.1 μm, and can further avoid vibration during movement to interfere with optical focusing. The controller 143 may also be connected to the processor 150 by signal, and can receive commands from the processor 150.

[0060] The camera mechanism 120 is connected to the slide seat of the longitudinal slide rail 142. In the camera mechanism 120, the camera 121, the gain element 122, the filter element 123 and the microscope objective lens 124 are arranged in order from top to bottom along the longitudinal direction Z, that is, the microscope objective lens 124 is closest to the wafer W1, and the camera 121 is farthest from the wafer W1. The camera 121 has an infrared CCD or CMOS camera structure, which can take high-pixel images. The gain element 122 can be, for example, a light gain element such as a photodiode array (PhotodiodeArray). The filter element 123 can have a pinhole slit structure, but is not limited to this. The filter element 123 can be used to filter the light of the non-focusing surface (such as the light L2) and allow the light of the focusing surface (such as the light L1) to pass through and enter the camera 121, so as to avoid the captured image containing the data of the non-focusing surface and the focusing surface overlapping each other, causing interference and making it difficult to see the defect D1. After filtering out the light on the non-focused surface, the light intensity will be weakened, so the light can be enhanced by the gain element 122 to prevent the captured image from being too dark.

[0061] The camera mechanism 120 may be pre-assembled and fixed to form a modular structure, and the distances between the components are fixed so that the focus of the camera mechanism 120 is fixed. Since the focus of the camera mechanism 120 is fixed, when the height adjustment mechanism 140 drives the camera mechanism 120 to move in the longitudinal direction Z, the focus will also move in the longitudinal direction Z to form different focus positions.

[0062] The light source 130 may have a flat light source structure, and can emit uniform infrared light and penetrate the wafer W1. Figure 1 In the embodiment, the wavelength of the infrared light may be between 1100nm and 1500nm, which can help penetrate the wafer W1 composed of single crystal silicon. The wavelength of the infrared light may be, for example, 1200nm, and its penetration is maximum when passing through the wafer W1 composed of single crystal silicon.

[0063] See also Figure 2 , and see also Figure 1 ,in Figure 2 Draw Figure 1 The wafer defect analysis device 100 of the embodiment captures different images at different focal positions. The stage 111 can be moved first so that the camera mechanism 120 corresponds to a captured area on the wafer W1, such as Figure 2As shown at the top, the height adjustment mechanism 140 can drive the camera mechanism 120 to move and find a focal position that can clearly focus on the surface of the wafer W1, define this focal position as a surface position P1 of the wafer W1, and record it. It should be noted that when the camera mechanism 120 is focused, the image taken will be clear, and the defect D1 on the surface of the wafer W1 can be clearly seen, and whether it is clearly focused can be determined by analyzing the image through the processor 150. The processor 150 can be, for example, a central processing unit (CPU), a digital signal processor (DSP), a microprocessor (MPU) and a microcontroller (MCU), and the processor 150 can be programmed to achieve specific functions.

[0064] The height adjustment mechanism 140 can continuously drive the camera mechanism 120 to move downward along the longitudinal direction Z, that is, toward the wafer W1. As described above, since the camera mechanism 120 is a module and has a fixed focus, the focus will move downward, so different focus positions can be generated in the longitudinal direction Z of the photographed area. In this way, the camera mechanism 120 can continuously capture images of the wafer W1 at different focus positions. In the first embodiment, the camera mechanism 120 can automatically capture images every time the height adjustment mechanism 140 moves a set distance to record the corresponding relationship between the focus position and the image.

[0065] The defect D1 extends in the horizontal direction X and the vertical direction Z. Therefore, if the defect D1 is invisible or almost invisible in the image corresponding to a certain focus position (such as the focus position P2), it means that the defect D1 has terminated and does not extend further downward.

[0066] Generally speaking, if Figure 2As shown, the image may include multiple defects D1, and the depth H1 of each defect D1 may not be consistent, some are deeper, and some are shallower. Therefore, when the focus position is lower, only deeper defects D1 will be captured, and the defects D1 visible in the image will become fewer and fewer. The processor 150 can calculate an average grayscale value of the entire image. Since the color of the defects D1 is darker, if the number of defects D1 is large, the image is darker and the average grayscale value is lower, as shown in the surface position P1, and the average grayscale value can be 64, for example. On the contrary, when the number of defects D1 is small, the image is brighter and the average grayscale value is higher, that is, as shown in the focus position P2, and the average grayscale value can be 240, for example. Therefore, in this embodiment, it is possible to confirm the status of the defect D1 by setting a threshold value (between 220 and 255, such as 240). When the number of defects D1 decreases and the average grayscale value is greater than or equal to the threshold, it means that there is no defect D1 at this focal position (i.e., focal position P2), or that the defect D1 does not affect reliability or performance, etc., and is recorded. Since the imaging mechanism 120 is moved by the height adjustment mechanism 140, the distance of its movement can be known, and the value of this focal position (i.e., focal position P2) in the longitudinal direction Z can be known, and the value of the surface position P1 in the longitudinal direction Z can also be known. The difference between the two values ​​is calculated, and the depth H1 of the deepest defect D1 in this photographed area in the longitudinal direction Z can be obtained. Multiple photographed areas can be set on the wafer W1, and the area with the largest depth H1 among these photographed areas can be regarded as the depth H1 of the defect D1 of the wafer W1, and can be used to determine whether the subsequent wafer W1 needs to undergo a grinding process, and the depth value of the grinding in the grinding process.

[0067] The wafer defect analysis device 100 may further include a pattern layer 170. The pattern layer 170 may be located between the light source 130 and the wafer W1. Figure 2 As shown, the height adjustment mechanism 140 drives the camera mechanism 120 to find a focal position that can clearly focus on the pattern layer 170, and the processor 150 can define this focal position as a bottom surface position P3 of the wafer W1. In one case, the bottom surface position P3 can be found first, and then the camera mechanism 120 can be moved to the surface position P1, and the difference between the bottom surface position P3 and the surface position P1 can be taken to determine whether it is consistent with the thickness of the wafer W1, so as to preliminarily confirm whether the wafer defect analysis device 100 is normal, but it is not limited to this.

[0068] See also Figure 3 ,in Figure 3 A block flow diagram of a wafer defect analysis method S200 according to another embodiment of the present invention is shown. The wafer defect analysis method S200 includes a lighting step S210 and a defect depth analysis step S240. Figure 1 and Figure 2 The wafer defect analysis apparatus 100 illustrates details of the wafer defect analysis method S200 .

[0069] In the illumination step S210 , the wafer W1 is placed on the light source 130 , and the infrared light emitted by the light source 130 penetrates the wafer W1 .

[0070] In the defect depth analysis step S240, the motor 141 of the height adjustment mechanism 140 drives the camera mechanism 120 to move along the longitudinal direction Z toward the wafer W1, so that the camera mechanism 120 respectively captures multiple images of the photographed area on the wafer W1 at multiple focal positions. The camera mechanism 120 includes a camera 121, a gain element 122, a filter element 123 and a microscope objective lens 124 in sequence along the longitudinal direction Z. The processor 150 confirms the depth H1 of the defect D1 in the photographed area based on the aforementioned multiple focal positions and the aforementioned multiple images.

[0071] Specifically, the wafer defect analysis method S200 may further include a surface position confirmation step S230, in which the motor 141 drives the camera mechanism 120 to capture an image of the surface of the wafer W1, find the focal position of the corresponding surface, and confirm the surface position P1 of the wafer W1. Afterwards, in the defect depth analysis step S240, the surface position P1 can be used as a calculation reference point, and when the average grayscale value of the defect D1 in one of the aforementioned multiple images is greater than or equal to the threshold, the processor 150 can obtain the numerical difference between the focal position (focal position P2) corresponding to the aforementioned one and the surface position P1 as the depth H1 of the defect D1.

[0072] As described above, the height adjustment mechanism 140 can drive the camera mechanism 120 to move in the longitudinal direction Z, so that the position of the focus can be continuously changed, and different focus positions can be formed on the wafer W1, that is, the camera mechanism 120 can move in the longitudinal direction Z1 to focus at different focus positions, and can shoot a clear image at this focus position. In this way, the processor 150 accurately identifies the defect D1 on the clear image to confirm whether the defect D1 exists in the image and obtain the average grayscale value of the image. In this way, the depth H1 of the defect D1 can be obtained by the distance moved by the height adjustment mechanism 140, that is, the numerical difference between the focus position (such as the focus position P2) and the surface position P1 in the longitudinal direction Z.

[0073] The wafer defect analysis method S200 may further include a bottom surface position confirmation step S220, in which a pattern layer 170 may be placed between the bottom surface of the wafer W1 and the light source 130, and the motor 141 may drive the camera mechanism 120 to capture an image of the pattern layer 170, and find the focal position corresponding to the pattern layer 170 to confirm the bottom surface position P3 of the wafer W1. In this way, as described above, the thickness of the wafer W1 can be calculated through the numerical difference between the bottom surface position P3 and the surface position P1 in the longitudinal direction Z, which can be compared with the known wafer W1 to confirm whether all components are operating normally.

[0074] Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended claims.

Claims

1. A wafer defect analysis device, characterized in that: Include: a light source, used to place a wafer and emit an infrared light; A video recording mechanism, including: a camera, facing the light source and used to photograph the wafer; a microscope objective lens, located between the camera and the light source; a filter element located between the camera and the microscope objective lens; and a gain element, located between the camera and the filter element; a height adjustment mechanism connected to the camera mechanism and comprising a motor; and a processor, signal-connected to the camera mechanism; The height adjustment mechanism drives the camera mechanism to move in a longitudinal direction. After the camera mechanism takes an image of the wafer, the image is received and analyzed by the processor to analyze a defect on the wafer.

2. The wafer defect analysis device according to claim 1, characterized in that: The wavelength of the infrared light is between 1100nm and 1500nm.

3. The wafer defect analysis device according to claim 1, characterized in that: The motor has a high-precision stepping motor structure.

4. The wafer defect analysis device according to claim 1, characterized in that: The invention further comprises a pattern layer, wherein the pattern layer is located between the light source and the wafer.

5. The wafer defect analysis device according to claim 1, characterized in that: The filter element has a pinhole slit structure.

6. A wafer defect analysis method, characterized in that: Include: an illumination step, in which a wafer is placed on a light source, and an infrared light emitted by the light source penetrates the wafer; and In a defect depth analysis step, a motor of a height adjustment mechanism drives a camera mechanism to move toward the wafer along a longitudinal direction, so that the camera mechanism respectively captures multiple images of a photographed area on the wafer at multiple focal positions. The camera mechanism includes a camera, a gain element, a filter element and a microscope objective lens in sequence along the longitudinal direction. A processor confirms a depth of a defect in the photographed area based on the multiple focal positions and the multiple images.

7. The wafer defect analysis method according to claim 6, characterized in that: The method further comprises a surface position confirmation step, wherein the motor drives the camera mechanism to take an image of a surface of the wafer, find the focus position corresponding to the surface, and confirm a surface position of the wafer.

8. The wafer defect analysis method according to claim 7, characterized in that: In the defect depth analysis step, the surface position is used as a calculation reference point. When an average grayscale value of one of the multiple images is greater than or equal to a threshold, the processor obtains a numerical difference between the focus position and the surface position corresponding to the one as the depth of the defect.

9. The wafer defect analysis method according to claim 6, wherein: The method further comprises a bottom surface position confirmation step, wherein a pattern layer is placed between a bottom surface of the wafer and the light source, and the motor drives the camera mechanism to take an image of the pattern layer to find the focal position corresponding to the pattern layer to confirm a bottom surface position of the wafer.

10. The wafer defect analysis method according to claim 6, wherein: The motor has a high-precision stepping motor structure.

Images