Transient current peak value obtaining method and device after bypass action of converter valve submodule

Abstract

The invention provides a method and device for obtaining a transient current peak value after bypass action of a converter valve sub-module, and the method comprises the steps: carrying out the analysis according to the turn-off condition of an insulated gate bipolar transistor of a lower bridge arm of the converter valve sub-module in a short-circuit process, and obtaining the occurrence time of a short-circuit current peak value; according to the occurrence time of the short-circuit current peak value and the converter valve sub-module, calculating to obtain a corresponding total parasitic inductance value of a short-circuit loop; and according to the total parasitic inductance value of the short-circuit loop and the converter valve sub-module, calculating to obtain a corresponding transient current peak value.

Description

Technical Field

[0001] The present application relates to the field of circuit safety control, and in particular to a method and device for obtaining a transient current peak value after a bypass action of a converter valve submodule. Background Art

[0002] When the converter valve submodule detects a short circuit fault, it will trigger a bypass signal to close the bypass switch. After the bypass switch is closed, the DC capacitor of the converter valve submodule will discharge through the loop of the bypass switch, and the discharge current may reach more than 100,000 amperes, causing a huge current impact on the DC capacitor, bypass switch mechanism, and power electronic devices.

[0003] Therefore, the industry urgently needs an accurate and effective method to calculate the transient current peak value, so as to determine the corresponding current impact for the transient process and provide design and operation reference for scenarios such as the short-circuit process of the converter valve submodule and the stress verification of the bypass mechanism. Summary of the invention

[0004] The purpose of this application is to provide a method and device for obtaining the transient current peak value after the bypass action of the converter valve submodule, so as to accurately obtain the transient current peak value after the bypass action of the converter valve submodule, and provide a reference for subsequent research and design.

[0005] To achieve the above-mentioned purpose, the present application provides a method for obtaining a transient current peak after a bypass action of a converter valve submodule, the method comprising: analyzing and obtaining a short-circuit current peak occurrence time according to a turn-off condition of an insulated gate bipolar transistor of a lower bridge arm of the converter valve submodule during a short-circuit process; calculating and obtaining a corresponding total parasitic inductance value of a short-circuit loop according to the short-circuit current peak occurrence time and the converter valve submodule; and calculating and obtaining a corresponding transient current peak according to the total parasitic inductance value of the short-circuit loop and the converter valve submodule.

[0006] In the above-mentioned method for obtaining the transient current peak after the bypass action of the converter valve submodule, optionally, obtaining the short-circuit current peak occurrence time based on the shutdown situation analysis includes: when the insulated gate bipolar transistor of the lower bridge arm is turned off, the bypass switch is closed after a preset time to allow the DC capacitor and the loop parasitic inductance to form an oscillation loop; the short-circuit current peak occurrence time is obtained through the oscillation period of the oscillation loop.

[0007] In the above-mentioned method for obtaining the transient current peak after the bypass action of the converter valve submodule, optionally, obtaining the short-circuit current peak occurrence time based on the shutdown situation analysis includes: when the insulated gate bipolar transistor of the lower bridge arm is not turned off, the insulated gate bipolar transistor of the lower bridge arm is broken down to form an oscillation loop with the DC capacitor and the loop parasitic inductance; and obtaining the short-circuit current peak occurrence time through the oscillation period of the oscillation loop.

[0008] In the above-mentioned method for obtaining the transient current peak after the bypass action of the converter valve submodule, optionally, the corresponding total parasitic inductance value of the short-circuit loop is calculated based on the occurrence time of the short-circuit current peak and the converter valve submodule, including: the total parasitic inductance value of the short-circuit loop is obtained by adding up the loop parasitic inductance value of the insulated gate bipolar transistor, the parasitic inductance value of the upper bridge arm device after short-circuit breakdown, and the parasitic inductance value of the bypass switch and its connecting copper busbar.

[0009] In the above-mentioned method for obtaining the transient current peak after the bypass action of the converter valve submodule, optionally, obtaining the corresponding transient current peak value based on the total parasitic inductance value of the short-circuit loop and the converter valve submodule includes: obtaining the functional relationship between the DC capacitance value of the capacitor, the DC bus voltage, the transient current peak value and the total parasitic inductance value of the short-circuit loop based on the topological structure of the converter valve submodule; and obtaining the corresponding transient current peak value by calculating the functional relationship and the total parasitic inductance value of the short-circuit loop.

[0010] The present application also provides a device for obtaining a transient current peak after a bypass action of a converter valve submodule, the device comprising a time determination module, an analysis module and a calculation module; the time determination module is used to analyze and obtain the short-circuit current peak occurrence time according to the turn-off status of the insulated gate bipolar transistor of the lower bridge arm of the converter valve submodule during the short-circuit process; the analysis module is used to calculate and obtain the corresponding total parasitic inductance value of the short-circuit loop according to the short-circuit current peak occurrence time and the converter valve submodule; the calculation module is used to calculate and obtain the corresponding transient current peak according to the total parasitic inductance value of the short-circuit loop and the converter valve submodule.

[0011] In the above-mentioned device for obtaining the transient current peak after the bypass action of the converter valve submodule, optionally, the time determination module includes a state determination unit and a time determination unit; the state determination unit is used to close the bypass switch after a preset time when the insulated gate bipolar transistor of the lower bridge arm is turned off, so that the DC capacitor and the loop parasitic inductance form an oscillation loop; and when the insulated gate bipolar transistor of the lower bridge arm is not turned off, the insulated gate bipolar transistor of the lower bridge arm is broken down, so that the DC capacitor and the loop parasitic inductance form an oscillation loop; the time determination unit is used to obtain the short-circuit current peak occurrence time through the oscillation period of the oscillation loop.

[0012] In the above-mentioned device for obtaining the transient current peak value after the bypass action of the converter valve submodule, optionally, the analysis module includes obtaining the total parasitic inductance value of the short-circuit loop by adding up the loop parasitic inductance value of the insulated gate bipolar transistor, the parasitic inductance value of the upper bridge arm device after short-circuit breakdown, and the parasitic inductance value of the bypass switch and its connected copper busbar.

[0013] In the above-mentioned device for obtaining the transient current peak value after the bypass action of the converter valve submodule, optionally, the calculation module includes a relationship unit and a calculation unit; the relationship unit is used to obtain the functional relationship between the DC capacitance value of the capacitor, the DC bus voltage, the transient current peak value and the total parasitic inductance value of the short-circuit loop according to the topological structure of the converter valve submodule; the calculation unit is used to calculate the corresponding transient current peak value through the functional relationship and the total parasitic inductance value of the short-circuit loop.

[0014] The present application also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the above method when executing the computer program.

[0015] The present application also provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program for executing the above method.

[0016] The present application also provides a computer program product, comprising a computer program / instruction, which implements the steps of the above method when executed by a processor.

[0017] The beneficial technical effect of the present application is that it has a reference significance for understanding the short-circuit process of the converter valve submodule and conducting stress verification of the bypass mechanism, provides effective guidance for subsequent research and design, and provides support for the protection of IGBT devices inside the converter device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings described herein are used to provide a further understanding of the present application, constitute a part of the present application, and do not constitute a limitation of the present application. In the drawings:

[0019] Figure 1A A flow chart of a method for obtaining a transient current peak value after a bypass action of a converter valve submodule provided in an embodiment of the present application;

[0020] Figure 1B A schematic diagram of the structure of a converter valve submodule circuit model provided in an embodiment of the present application;

[0021] Figure 2 A schematic diagram for determining the short-circuit current peak occurrence time provided in an embodiment of the present application;

[0022] Figure 3 A schematic diagram for determining the short-circuit current peak occurrence time provided in an embodiment of the present application;

[0023] Figure 4 A schematic diagram of determining the peak time of turning off an insulated gate bipolar transistor provided in an embodiment of the present application;

[0024] Figure 5A schematic diagram of determining the peak time of an insulated gate bipolar transistor that is not turned off provided by an embodiment of the present application;

[0025] Figure 6 A schematic diagram of a process for obtaining a transient current peak value provided in an embodiment of the present application;

[0026] Figure 7 A schematic diagram of the structure of a device for obtaining a transient current peak value after a bypass action of a converter valve submodule provided in an embodiment of the present application;

[0027] Figure 8 A schematic diagram of the structure of an electronic device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0028] The following will describe the implementation methods of the present application in detail in conjunction with the accompanying drawings and embodiments, so that the implementation process of how the present application applies technical means to solve technical problems and achieve technical effects can be fully understood and implemented accordingly. It should be noted that as long as there is no conflict, the various embodiments in the present application and the various features in the embodiments can be combined with each other, and the technical solutions formed are all within the protection scope of the present application.

[0029] In addition, the steps shown in the flowcharts of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although a logical order is shown in the flowcharts, in some cases, the steps shown or described can be performed in an order different from that shown here.

[0030] Please refer to Figure 1A As shown, the present application provides a method for obtaining a transient current peak value after a bypass action of a converter valve submodule, the method comprising:

[0031] S101 analyzes and obtains the short-circuit current peak occurrence time according to the turn-off status of the insulated gate bipolar transistor of the lower bridge arm of the converter valve submodule during the short-circuit process;

[0032] S102: calculating and obtaining the corresponding total parasitic inductance value of the short-circuit loop according to the short-circuit current peak occurrence time and the converter valve submodule;

[0033] S103 calculates and obtains a corresponding transient current peak value according to the total parasitic inductance value of the short-circuit loop and the converter valve submodule.

[0034] For details, please refer to Figure 1B The circuit model of the converter valve submodule is shown as follows, where C is the DC capacitance of the capacitor, U DC is the DC bus voltage, u CE is the collector-emitter voltage (u CE,chip is the collector-emitter voltage of the insulated gate bipolar transistor IGBT chip, L s,CEis the parasitic inductance of the IGBT device package), i C is the collector current, u F is the FWD voltage (u F,chip is the FWD chip voltage, L s,F is the parasitic inductance of the FWD device package), I L is the load inductor current, L s,1 is the parasitic inductance of the IGBT circuit, L s,2 is the parasitic inductance of the FWD freewheeling circuit, L s,b is the parasitic inductance of the bypass switch and its connecting copper bar, L s,SC is the parasitic inductance value after the upper bridge arm device is short-circuited and broken down; the reference direction of voltage and current is Figure 1B Winning bid.

[0035] Please refer to Figure 2 As shown, in one embodiment of the present application, obtaining the short-circuit current peak occurrence time according to the shutdown situation analysis includes:

[0036] When the insulated gate bipolar transistor of the lower bridge arm is turned off at S201, the bypass switch is closed after a preset time so that the DC capacitor and the loop parasitic inductance form an oscillation loop;

[0037] S202 obtains the short-circuit current peak occurrence time through the oscillation period of the oscillation circuit.

[0038] Please refer to Figure 3 As shown, in another embodiment of the present application, obtaining the short-circuit current peak occurrence time according to the shutdown situation analysis includes:

[0039] In step S301, when the insulated gate bipolar transistor of the lower bridge arm is not turned off, the insulated gate bipolar transistor of the lower bridge arm is broken down so that the DC capacitor and the loop parasitic inductance form an oscillation loop;

[0040] S302 obtains the short-circuit current peak occurrence time through the oscillation period of the oscillation circuit.

[0041] Specifically, in actual work, the short-circuit process mainly includes the following two situations:

[0042] (1) The lower arm IGBT desaturation protection identifies a short circuit fault. The control system sends a shutdown signal to the lower arm IGBT ( Figure 4 At t1, the lower bridge arm IGBT is successfully turned off. 10ms later, the bypass switch S is closed ( Figure 4 The DC capacitor and the parasitic inductance of the loop form an oscillation loop. After a quarter of the oscillation cycle ( Figure 4 At t3, the short-circuit current reaches its peak value i SC,peak .

[0043] (2) The lower arm IGBT desaturation protection identifies a short circuit fault. The control system sends a shutdown signal to the lower arm IGBT ( Figure 5 At t1, the lower bridge arm IGBT fails to turn off successfully, causing the lower bridge arm IGBT to break down (L s,SC2 is the parasitic inductance value after the short circuit breakdown of the lower bridge arm device). The DC capacitor and the loop parasitic inductance form an oscillation loop. After a quarter of the oscillation cycle ( Figure 5 At t2, the short-circuit current reaches its peak value i SC,peak .

[0044] In one embodiment of the present application, the corresponding total parasitic inductance value of the short-circuit loop is calculated based on the short-circuit current peak occurrence time and the converter valve submodule, including: the total parasitic inductance value of the short-circuit loop is obtained by adding up the loop parasitic inductance value of the insulated gate bipolar transistor, the parasitic inductance value of the upper bridge arm device after short-circuit breakdown, and the parasitic inductance value of the bypass switch and its connected copper busbar.

[0045] For further information, please refer to Figure 6 As shown, the corresponding transient current peak value is calculated based on the total parasitic inductance of the short-circuit loop and the converter valve submodule, including:

[0046] S601 obtains a functional relationship between a capacitor DC capacitance value, a DC bus voltage, a transient current peak value, and a total parasitic inductance value of a short-circuit loop according to a topological structure of the converter valve submodule;

[0047] S602 calculates the corresponding transient current peak value through the functional relationship and the total parasitic inductance value of the short-circuit loop.

[0048] For details, please combine Figure 1B As shown, for the above case (1):

[0049] The short-circuit current peak occurs after the bypass switch S is closed. At this time, the total parasitic inductance of the short-circuit loop is:

[0050] L SC,1 =L s,1 +L s,SC1 +L s,b；

[0051] exist:

[0052]

[0053] The peak current is solved as:

[0054]

[0055] For the above situation (2):

[0056] The short-circuit current peak occurs after the lower bridge arm IGBT device breaks down. At this time, the total parasitic inductance of the short-circuit loop is:

[0057] L SC,2 =L s,1 +L s,SC2 +L s,b；

[0058] exist:

[0059]

[0060] The peak current is solved as:

[0061]

[0062] Please refer to Figure 7 As shown, the present application also provides a device for obtaining a transient current peak after a bypass action of a converter valve submodule, the device comprising a time determination module, an analysis module and a calculation module; the time determination module is used to analyze and obtain the short-circuit current peak occurrence time according to the turn-off status of the insulated gate bipolar transistor of the lower bridge arm of the converter valve submodule during the short-circuit process; the analysis module is used to calculate and obtain the corresponding total parasitic inductance value of the short-circuit loop according to the short-circuit current peak occurrence time and the converter valve submodule; the calculation module is used to calculate and obtain the corresponding transient current peak according to the total parasitic inductance value of the short-circuit loop and the converter valve submodule.

[0063] In the above embodiment, the time determination module includes a state determination unit and a time determination unit; the state determination unit is used to close the bypass switch after a preset time when the insulated gate bipolar transistor of the lower bridge arm is turned off so that the DC capacitor and the loop parasitic inductance form an oscillation loop; and when the insulated gate bipolar transistor of the lower bridge arm is not turned off, the insulated gate bipolar transistor of the lower bridge arm is broken down so that the DC capacitor and the loop parasitic inductance form an oscillation loop; the time determination unit is used to obtain the short-circuit current peak occurrence time through the oscillation period of the oscillation loop. The analysis module includes obtaining the total parasitic inductance value of the short-circuit loop by summing up the parasitic inductance value of the loop of the insulated gate bipolar transistor, the parasitic inductance value of the upper bridge arm device after short-circuit breakdown, and the parasitic inductance value of the bypass switch and its connecting copper bar. The calculation module includes a relationship unit and a calculation unit; the relationship unit is used to obtain the functional relationship between the DC capacitance value of the capacitor, the DC bus voltage, the transient current peak value and the total parasitic inductance value of the short-circuit loop according to the topological structure of the converter valve submodule; the calculation unit is used to calculate the corresponding transient current peak value through the functional relationship and the total parasitic inductance value of the short-circuit loop.

[0064] Since the principle of solving the problem by the device is similar to the method for obtaining the transient current peak value after the bypass action of the converter valve submodule, the implementation of the device can refer to the implementation of the method for obtaining the transient current peak value after the bypass action of the converter valve submodule, and the repeated parts will not be repeated.

[0065] The beneficial technical effect of the present application is that it has a reference significance for understanding the short-circuit process of the converter valve submodule and conducting stress verification of the bypass mechanism, provides effective guidance for subsequent research and design, and provides support for the protection of IGBT devices inside the converter device.

[0066] The present application also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the above method when executing the computer program.

[0067] The present application also provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program for executing the above method.

[0068] The present application also provides a computer program product, comprising a computer program / instruction, which implements the steps of the above method when executed by a processor.

[0069] like Figure 8 As shown, the electronic device 600 may further include: a communication module 110, an input unit 120, an audio processor 130, a display 160, and a power supply 170. It is worth noting that the electronic device 600 does not necessarily have to include Figure 8 In addition, the electronic device 600 may also include Figure 8 For components not shown, reference may be made to the prior art.

[0070] like Figure 8 As shown, the central processor 100 is sometimes also referred to as a controller or an operation control, and may include a microprocessor or other processor devices and / or logic devices. The central processor 100 receives inputs and controls the operations of various components of the electronic device 600.

[0071] The memory 140 may be, for example, one or more of a cache, a flash memory, a hard drive, a removable medium, a volatile memory, a non-volatile memory or other suitable devices. The above-mentioned information related to the failure may be stored, and a program for executing the relevant information may also be stored. The CPU 100 may execute the program stored in the memory 140 to implement information storage or processing.

[0072] The input unit 120 provides input to the CPU 100. The input unit 120 is, for example, a key or a touch input device. The power supply 170 is used to provide power to the electronic device 600. The display 160 is used to display display objects such as images and text. The display may be, for example, an LCD display, but is not limited thereto.

[0073] The memory 140 may be a solid-state memory, such as a read-only memory (ROM), a random access memory (RAM), a SIM card, etc. It may also be a memory that saves information even when the power is off, can be selectively erased, and is provided with more data, examples of which are sometimes referred to as EPROMs, etc. The memory 140 may also be some other type of device. The memory 140 includes a buffer memory 141 (sometimes referred to as a buffer). The memory 140 may include an application / function storage unit 142, which is used to store application programs and function programs or processes for executing the operation of the electronic device 600 through the central processor 100.

[0074] The memory 140 may also include a data storage unit (data 143) for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit (driver 144) of the memory 140 may include various drivers for communication functions of the electronic device and / or for executing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0075] The communication module 110 is a transmitter / receiver 110 that transmits and receives signals via an antenna 111. The communication module (transmitter / receiver) 110 is coupled to the central processor 100 to provide input signals and receive output signals, which may be the same as the case of a conventional mobile communication terminal.

[0076] Based on different communication technologies, multiple communication modules 110 may be provided in the same electronic device, such as a cellular network module, a Bluetooth module and / or a wireless LAN module. The communication module (transmitter / receiver) 110 is also coupled to a speaker 131 and a microphone 132 via an audio processor 130 to provide an audio output via the speaker 131 and receive an audio input from the microphone 132, thereby realizing a common telecommunication function. The audio processor 130 may include any suitable buffer, decoder, amplifier, etc. In addition, the audio processor 130 is also coupled to the central processor 100, so that the sound can be recorded on the local machine through the microphone 132, and the sound stored on the local machine can be played through the speaker 131.

[0077] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0078] The present application is described with reference to the flowchart and / or block diagram of the method, device (system) and computer program product according to the embodiment of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, and the combination of the process and / or box in the flowchart and / or block diagram can be realized by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device produce a device for realizing the function specified in one process or multiple processes in the flowchart and / or one box or multiple boxes in the block diagram.

[0079] These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device that implements the functions specified in one or more processes in the flowchart and / or one or more boxes in the block diagram.

[0080] These computer program instructions may also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, whereby the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one or more processes in the flowchart and / or one or more boxes in the block diagram.

[0081] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present application. It should be understood that the above description is only a specific embodiment of the present application and is not intended to limit the scope of protection of the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the scope of protection of the present application.

Claims

1. A method for obtaining the transient current peak value after the bypass action of the converter valve submodule, characterized in that: The method comprises: According to the turn-off condition of the insulated gate bipolar transistor of the lower bridge arm of the converter valve submodule during the short-circuit process, the short-circuit current peak occurrence time is analyzed and obtained; Calculating and obtaining a corresponding total parasitic inductance value of the short-circuit loop according to the short-circuit current peak occurrence time and the converter valve submodule; The corresponding transient current peak value is obtained by calculation according to the total parasitic inductance value of the short-circuit loop and the converter valve submodule.

2. The method for obtaining the transient current peak value after the bypass action of the converter valve submodule according to claim 1 is characterized in that: The short-circuit current peak occurrence time obtained by analyzing the shutdown situation includes: When the insulated gate bipolar transistor of the lower bridge arm is turned off, the bypass switch is closed after a preset time so that the DC capacitor and the loop parasitic inductance form an oscillation loop; The short-circuit current peak occurrence time is obtained through the oscillation period of the oscillation circuit.

3. The method for obtaining the transient current peak value after the bypass action of the converter valve submodule according to claim 1 is characterized in that: The short-circuit current peak occurrence time obtained by analyzing the shutdown situation includes: When the insulated gate bipolar transistor of the lower bridge arm is not turned off, the insulated gate bipolar transistor of the lower bridge arm is broken down so that the DC capacitor and the parasitic inductance of the loop form an oscillation loop; The short-circuit current peak occurrence time is obtained through the oscillation period of the oscillation circuit.

4. The method for obtaining the transient current peak value after the bypass action of the converter valve submodule according to claim 2 or 3, characterized in that: Calculating the corresponding total parasitic inductance value of the short-circuit loop according to the short-circuit current peak occurrence time and the converter valve submodule includes: The total parasitic inductance of the short-circuit loop is obtained by summing up the parasitic inductance of the loop of the insulated gate bipolar transistor, the parasitic inductance of the upper bridge arm device after short-circuit breakdown, and the parasitic inductance of the bypass switch and the copper busbar connected thereto.

5. The method for obtaining the transient current peak value after the bypass action of the converter valve submodule according to claim 4 is characterized in that: Calculating the corresponding transient current peak value according to the total parasitic inductance of the short-circuit loop and the converter valve submodule includes: Obtaining a functional relationship between a capacitor DC capacitance value, a DC bus voltage, a transient current peak value, and a total parasitic inductance value of a short-circuit loop according to a topological structure of the converter valve submodule; The corresponding transient current peak value is obtained by calculating the functional relationship and the total parasitic inductance value of the short-circuit loop.

6. A device for obtaining the transient current peak value after the bypass action of the converter valve submodule, characterized in that: The device comprises a time determination module, an analysis module and a calculation module; The time determination module is used to analyze and obtain the short-circuit current peak occurrence time according to the turn-off condition of the insulated gate bipolar transistor of the lower bridge arm of the converter valve submodule during the short-circuit process; The analysis module is used to calculate and obtain the corresponding total parasitic inductance value of the short-circuit loop according to the short-circuit current peak occurrence time and the converter valve submodule; The calculation module is used to calculate and obtain the corresponding transient current peak value according to the total parasitic inductance value of the short-circuit loop and the converter valve submodule.

7. The device for obtaining the transient current peak value after the bypass action of the converter valve submodule according to claim 6 is characterized in that: The time determination module comprises a state determination unit and a time determination unit; The state determination unit is used for closing the bypass switch after a preset time when the insulated gate bipolar transistor of the lower bridge arm is turned off so that the DC capacitor and the loop parasitic inductance form an oscillation loop; and when the insulated gate bipolar transistor of the lower bridge arm is not turned off, the insulated gate bipolar transistor of the lower bridge arm is broken down so that the DC capacitor and the loop parasitic inductance form an oscillation loop; The time determination unit is used to obtain the short-circuit current peak occurrence time through the oscillation period of the oscillation circuit.

8. The device for obtaining the transient current peak value after the bypass action of the converter valve submodule according to claim 7 is characterized in that: The analysis module includes a total parasitic inductance value of the short-circuit loop obtained by summing up the parasitic inductance value of the loop of the insulated gate bipolar transistor, the parasitic inductance value of the upper bridge arm device after short-circuit breakdown, and the parasitic inductance value of the bypass switch and its connecting copper busbar.

9. The device for obtaining the transient current peak value after the bypass action of the converter valve submodule according to claim 6, characterized in that: The calculation module includes a relation unit and a calculation unit; The relationship unit is used to obtain a functional relationship between a DC capacitance value of a capacitor, a DC bus voltage, a transient current peak value and a total parasitic inductance value of a short-circuit loop according to a topological structure of the converter valve submodule; The calculation unit is used to calculate and obtain the corresponding transient current peak value through the functional relationship and the total parasitic inductance value of the short-circuit loop.

10. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the method according to any one of claims 1 to 5 is implemented.

11. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method according to any one of claims 1 to 5 is implemented.

12. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instructions are executed by a processor, the steps of the method according to any one of claims 1 to 5 are implemented.

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