Mask and preparation method thereof, exposure machine and display panel

Abstract

The embodiment of the invention provides a mask and a preparation method thereof, an exposure machine and a display panel, the mask comprises a shielding layer, the shielding layer comprises a shielding area and a plurality of light-transmitting areas, the plurality of light-transmitting areas at least comprise a first light-transmitting area and a second light-transmitting area, and the size of the first light-transmitting area is different from that of the second light-transmitting area. According to the embodiment of the invention, the lens defect problem of a product is improved by changing the size of the light-transmitting area, and the display performance is further improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of display technology, and in particular to a mask and a preparation method thereof, an exposure machine and a display panel. Background Art

[0002] In the traditional display panel preparation process, the light-emitting pixel patterning is usually achieved through a fine metal mask (FMM). FMM technology is mature and has rich experience in mass production. However, FMM technology also has problems such as limited accuracy, high development cost, and long development cycle. The fine metal mask-free technology eliminates the limitations of traditional OLED processes on display size, resolution, and other screen performance, and has the advantages of high performance, full-domain size, and agile delivery.

[0003] Patent applications CN118251982A, CN115666161A, CN116648095A, CN117062489A, CN118678742A, CN118785761A, CN115224220A, CN118678729A, CN118660529A, and CN118660589A record relevant content of the non-fine metal mask technology for reference.

[0004] However, the process performance of the current mask needs to be improved. Summary of the invention

[0005] In view of this, embodiments of the present application provide a mask plate and a method for preparing the same, an exposure machine and a display panel to at least partially solve the above problems.

[0006] According to a first aspect of an embodiment of the present application, a mask is provided, wherein the mask comprises a shielding layer, the shielding layer comprises a shielding area and a plurality of light-transmitting areas, the plurality of light-transmitting areas at least comprise a first light-transmitting area and a second light-transmitting area, and the size of the first light-transmitting area is different from the size of the second light-transmitting area.

[0007] According to the solution provided in the embodiment of the present application, the sizes of the light-transmitting areas at different positions of the mask are changed to reduce lens defects.

[0008] In some embodiments, a size of the first light-transmitting region is smaller than a size of the second light-transmitting region.

[0009] In some embodiments, a size of the first light-transmitting region is greater than a size of the second light-transmitting region.

[0010] In some embodiments, the shape of the first light-transmitting region is the same as the shape of the second light-transmitting region.

[0011] In some embodiments, the size difference between the first light-transmitting region and the second light-transmitting region is greater than 0.3 μm.

[0012] In some embodiments, the plurality of light-transmitting regions further include a third light-transmitting region, and a size of the third light-transmitting region is different from sizes of the first light-transmitting region and the second light-transmitting region.

[0013] In some embodiments, the mask further comprises a bearing layer and a pillar. The bearing layer and the shielding layer are stacked. The pillar is arranged between the bearing layer and the shielding layer, and the orthographic projection of the pillar on the bearing layer is located in the light shielding area within the orthographic projection of the bearing layer.

[0014] According to the second aspect of the embodiment of the present application, a method for preparing a mask is provided. The method for preparing a mask includes providing an initial mask; the initial mask includes an initial shielding layer, and the initial shielding layer includes an initial light-shielding area and a plurality of initial light-transmitting areas. The first area of ​​the initial mask is tested for feature size deviation by an exposure machine to obtain the initial value of the feature size of the first area of ​​the initial mask; the exposure machine includes a light source, a lens module and a carrier. The initial mask is located between the light source and the lens module, and the light emitted by the light source is irradiated to the carrier after passing through the initial mask and the lens module. The lens module includes a plurality of lenses, and the lenses include overlapping areas and non-overlapping areas. The overlapping area is a lens area corresponding to the part where the orthographic projections of two adjacent lenses on the carrier overlap, and the non-overlapping area is a lens area corresponding to the part where the orthographic projections of two adjacent lenses on the carrier do not overlap. The first area of ​​the initial mask is the area corresponding to the initial mask and the overlapping area. Based on the initial value, the first area of ​​the initial mask is corrected to form a shielding layer. The shielding layer includes a light shielding area and a plurality of light transmission areas; the plurality of light transmission areas include at least a first light transmission area and a second light transmission area, and the size of the first light transmission area is different from the size of the second light transmission area. A mask is formed, and the mask includes the shielding layer.

[0015] In some embodiments, based on the initial value, the first area of ​​the initial mask is corrected to form a shielding layer, including: comparing the deviation value with the deviation threshold, if the deviation value is greater than the deviation threshold, correcting the first area of ​​the initial mask; if the deviation value is equal to or less than the deviation threshold, the initial shielding layer is the shielding layer. The deviation value is the difference between the initial value and the standard value.

[0016] In some embodiments, the deviation threshold is 0.1 μm-0.3 μm.

[0017] In some embodiments, the first area of ​​the initial mask is corrected, including: if the initial value is greater than the standard value, reducing the size of the first area of ​​the initial mask; if the initial value is equal to the standard value, the size of the first area of ​​the initial mask remains unchanged; if the initial value is less than the standard value, increasing the size of the first area of ​​the initial mask.

[0018] In some embodiments, in the step of reducing the size of the first area of ​​the initial mask, the first size is less than or equal to the deviation value, and the first size is the reduced size of the first area of ​​the initial mask. The deviation value is the difference between the initial value and the standard value.

[0019] In some embodiments, in the step of increasing the size of the first area of ​​the initial mask, the second size is less than or equal to the deviation value, and the second size is the increased size of the first area of ​​the initial mask. The deviation value is the difference between the initial value and the standard value.

[0020] In some embodiments, the first area of ​​the initial mask is corrected, and further includes: forming a light shielding film, the light shielding film is arranged on one side of the initial shielding layer, and the light transmittance of the light shielding film is less than the light transmittance of the lens. If the initial value is greater than the standard value, the light shielding film and the overlapping area of ​​the lens are arranged relative to each other; if the initial value is less than the standard value, the light shielding film and the non-overlapping area of ​​the lens are arranged relative to each other.

[0021] In some embodiments, the first area of ​​the initial mask is corrected, further comprising: forming an optical compensation film, the optical compensation film being disposed on one side of the initial shielding layer. The light transmittance of the optical compensation film is greater than the light transmittance of the lens. If the initial value is greater than the standard value, the optical compensation film is disposed relative to the non-overlapping area of ​​the lens; if the initial value is less than the standard value, the optical compensation film is disposed relative to the overlapping area of ​​the lens.

[0022] According to a third aspect of the embodiments of the present application, an exposure machine is provided. The exposure machine is applied to the mask described in any of the above embodiments, or to the mask made by any of the above mask preparation methods. The exposure machine includes a light source, a lens module and a carrier. The light source is used to emit light. The lens module includes a plurality of lenses, and the lens includes an overlapping area and a non-overlapping area. The overlapping area is a lens area corresponding to the portion where the orthographic projections of two adjacent lenses on the carrier overlap, and the non-overlapping area is a lens area corresponding to the portion where the orthographic projections of two adjacent lenses on the carrier do not overlap. The carrier is located on the side of the lens module away from the light source. Wherein, the mask is located between the light source and the lens module.

[0023] According to the solution provided in the embodiment of the present application, the characteristic size of the first area of ​​the initial mask is pre-compensated to form a mask to offset and weaken the exposure intensity difference between the lens overlapping area and the non-overlapping area, and the lens defect formed by the lens module of the exposure machine is pre-compensated, so that the exposure intensity of the light passing through the overlapping area of ​​the lens on the display motherboard to be exposed is approximately the same as the exposure intensity of the light passing through the non-overlapping area of ​​the lens, thereby reducing the characteristic size difference of the product in the lens overlapping area, improving the lens defect problem of the product, and thereby improving the display performance.

[0024] According to a fourth aspect of the embodiments of the present application, a display panel is provided. The display panel is prepared using the mask described in the above embodiment, or prepared using a mask made using the mask preparation method described in any of the above embodiments, or prepared using the exposure machine described in the above embodiment.

[0025] According to a fifth aspect of the embodiments of the present application, a display device is provided, which includes the display panel according to the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0027] Figure 1 An exemplary structural diagram of a display device provided in an embodiment of the present application;

[0028] Figure 2 A schematic diagram of an exemplary structure of a display panel provided in an embodiment of the present application;

[0029] Figure 3 for Figure 2 Enlarged view of point A in the middle;

[0030] Figure 4 for Figure 3 A cross-sectional view taken along section line B1-B2;

[0031] Figure 5 is a schematic diagram of the structure of an exposure machine in some embodiments;

[0032] Figure 6 It is a schematic diagram of the structure of the lens module of the exposure machine in some examples;

[0033] Figure 7 Schematic diagram of the structure of the lens module of the exposure machine in some other examples;

[0034] Figure 8 are the sizes of light-transmitting areas at different positions on the mask in some embodiments;

[0035] Fig. 9 It is a schematic diagram of the structure of the film layer of the display panel in some embodiments;

[0036] Fig.10 is a characteristic size of a film layer formed by a mask in some embodiments;

[0037] Fig.11A schematic diagram of an exemplary structure of a mask provided in an embodiment of the present application.

[0038] Fig.12 A flowchart of a method for preparing a mask provided in an embodiment of the present application;

[0039] Fig.13 A schematic diagram of an exemplary structure of a mask provided in an embodiment of the present application;

[0040] Fig.14 A schematic diagram of an exemplary structure of a mask provided in an embodiment of the present application;

[0041] Fig.15 A schematic diagram of the structure of an exposure machine provided in an embodiment of the present application;

[0042] Fig.16 The sizes of light-transmitting areas at different positions on the mask provided in the embodiment of the present application;

[0043] Fig.17 A schematic diagram of the structure of a film layer of a display panel provided in an embodiment of the present application;

[0044] Fig.18 The characteristic dimensions of the film layer formed by the mask provided in the embodiment of the present application. DETAILED DESCRIPTION

[0045] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the embodiments of the present application should fall within the scope of protection of the embodiments of the present application.

[0046] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms of "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in the embodiments of the present application refers to and includes any or all possible combinations of one or more associated listed items.

[0047] It should be understood that in the description of the embodiments of the present application, the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the schemes of the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0048] In addition, when an element or layer is referred to as being “on,” “connected to,” or “coupled to” another element or layer, the element or layer may be directly on, directly connected to, or directly coupled to the other element or layer, or intervening elements or layers may be present. However, when an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

[0049] The terms first, second, etc. are used to describe various elements, components, regions, layers and / or parts, but these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer and / or part from another element, component, region, layer and / or part.

[0050] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0051] The specific implementation of the embodiment of the present application is further explained below in conjunction with the accompanying drawings of the embodiment of the present application.

[0052] Figure 1 A schematic diagram of an exemplary structure of a display device provided in an embodiment of the present application.

[0053] See also Figure 1, an embodiment of the present application provides a display device 1000. The display device 1000 is an electronic device having an image (including: static image or dynamic image, wherein the dynamic image may be a video) display function. For example, the display device 1000 may be any one of a display, a television, a billboard, a digital photo frame, a laser printer with a display function, a telephone, a mobile phone, a personal digital assistant (PDA), a digital camera, a portable camcorder, a viewfinder, a navigator, a large-area wall, a home appliance, an information query device (such as business query devices for e-government, banks, hospitals, power and other departments), a monitor, an electronic painting screen, a virtual reality (VR) display device, an augmented reality (AR) display device and a vehicle-mounted display, but is not limited thereto.

[0054] Continue to see Figure 1 The display device 1000 may include a display panel 100, and the display panel may be any one of an organic light emitting diode (OLED) display panel, a quantum dot light emitting diode (QLED) display panel, a micro light emitting diode (MiniLED or Micro LED) display panel and a liquid crystal display (LCD) panel.

[0055] Figure 2 A schematic diagram of an exemplary structure of a display panel provided in an embodiment of the present application. Figure 3 for Figure 2 Enlarged view of point A in the middle.

[0056] For the convenience of the following description, an XYZ coordinate system is established. The first direction X and the second direction Y are parallel to the plane where the display surface of the display panel 100 is located, and the first direction X and the second direction Y are perpendicular to each other. The third direction Z is perpendicular to the plane where the display surface of the display panel 100 is located.

[0057] See also Figure 2 The display panel 100 has a display area AA and a non-display area SA, wherein the display area AA is an area on the display panel 100 for displaying images, and the non-display area SA is an area on the display panel 100 other than the display area AA. The non-display area SA may be located on at least one side (e.g., one side, or multiple sides) of the display area AA, for example, the non-display area SA may be arranged around the display area AA.

[0058] See also Figure 3, the display area AA includes a plurality of pixel units P. The plurality of pixel units P are arrayed in the display area AA, the first direction X may be a row direction of the pixel units P, and the second direction Y may be a column direction of the pixel units P. Each pixel unit P includes a plurality of sub-pixels 101, and each sub-pixel 101 may display a single color. For example, the pixel unit P includes a first sub-pixel, a second sub-pixel, and a third sub-pixel, which display red, green, or blue, respectively.

[0059] The sub-pixel 101 is the smallest unit for displaying images in the display panel 100. A plurality of sub-pixels 101 are arranged in the display area AA according to a specified rule. For example, the plurality of sub-pixels 101 are arranged in a plurality of rows and columns. Each sub-pixel 101 includes a light-emitting device and a pixel driving circuit for controlling the light-emitting device to emit light (the light-emitting device and the pixel driving circuit are described in detail below).

[0060] Figure 4 for Figure 3 A cross-sectional view taken along section line B1-B2.

[0061] See also Figure 4 The display panel 100 includes a substrate 10 , a display function layer, a pixel definition layer 20 and an isolation structure (VSS) 30 .

[0062] The substrate 10 includes a base substrate 11. The base substrate 11 supports other structures in the display panel 100. The base substrate 11 can be arranged according to actual needs. Exemplarily, the base substrate 11 can be a rigid substrate, and again exemplary, the base substrate 11 can be a flexible substrate. The substrate 10 can also include a driving circuit layer 12, which is located on one side of the base substrate 11 and includes a plurality of pixel driving circuits. The pixel driving circuit is coupled to the light-emitting device and provides an electrical signal to each light-emitting device so that the light-emitting device emits light of corresponding brightness. The pixel driving circuit can include a plurality of transistors and capacitors. The pixel driving circuit can be a 3T1 C, 7T1 C, 8T1 C or 9T1 C circuit, wherein T represents a transistor, and the number in front of T represents the number of transistors, and C represents a capacitor, and the number in front of C represents the number of capacitors. Exemplarily, 3T1 C represents 3 transistors and 1 capacitor. The transistor can be a thin film transistor (TFT), a field effect transistor (MOS) or other switching devices with the same characteristics.

[0063] The pixel definition layer 20 is located on one side of the substrate 10. The pixel definition layer 20 includes a pixel definition portion 21 and a plurality of pixel openings 22 formed by the pixel definition portion 21, that is, the surface of the pixel definition layer 20 away from the substrate 10 has a plurality of openings.

[0064] The display function layer is located on the substrate 10, and includes a plurality of light-emitting devices 30 at least partially (e.g., partially, or entirely) located in the pixel opening 22. The light-emitting device 30 is an electronic device that can emit light, and one light-emitting device 30 corresponds to one sub-pixel, and one light-emitting device 30 corresponds to one pixel opening 22. The light-emitting device 30 can be any one of an OLED device, a QLED device, an LED device, and a micro light-emitting diode (Mini LED or Micro LED) device. The light-emitting device 30 includes a first electrode 31, a light-emitting function layer 32, and a second electrode 33 stacked in sequence in a direction away from the substrate 10. Among them, the first electrode 31 is located on one side of the substrate 10, one first electrode 31 corresponds to one pixel opening 22, the pixel opening 22 exposes a portion of the corresponding first electrode 31, and the pixel defining portion 21 covers the gap between adjacent first electrodes 31. The light-emitting function layer 32 covers the exposed first electrode 31, and the side of the light-emitting function layer 32 close to the substrate 10 is connected to the first electrode 31, and the side away from the substrate 10 is connected to the second electrode 33. Either the first electrode 31 or the second electrode 33 is an anode, and the other is a cathode. Exemplarily, the first electrode 31 is an anode and the second electrode 33 is a cathode. Again exemplary, the first electrode 31 is a cathode and the second electrode 33 is an anode. The light-emitting functional layer 32 may include a light-emitting layer and a functional material layer. For example, the functional material layer may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL) and an electron injection layer (EIL), which may be specifically configured according to actual needs, and this embodiment does not limit this.

[0065] The isolation structure 40 is located on the side of the pixel definition layer 20 away from the substrate 10, and is used to isolate the light-emitting functional layer 32 of the adjacent light-emitting device 30. Specifically, the isolation structure 40 is located on the side of the pixel definition portion 21 away from the substrate 10. The isolation structure 40 can be a multi-layer structure. Exemplarily, the isolation structure 40 includes a first isolation layer 41, a second isolation layer 42 and a third isolation layer 43 stacked in sequence in a direction away from the substrate 10, and the second electrode 33 overlaps the first isolation layer 41. The isolation structure 40 encloses a plurality of isolation openings. The isolation opening is connected to the pixel opening 22, and the light-emitting device 30 is surrounded by the isolation structure 40. The isolation structure 40 is electrically connected to the light-emitting device 30, and specifically, the first isolation layer 41 is electrically connected to the second electrode 33.

[0066] The display panel 100 may further include a first encapsulation layer 50, which is located on a side of the display function layer away from the substrate 10. Exemplarily, the first encapsulation layer 50 is composed of a plurality of encapsulation units that respectively cover the isolation openings, and the first encapsulation layer 50 at least covers the light-emitting devices 30. The first encapsulation layer 50 forms a dense film (for example, a film having only a closed contour line) above these light-emitting devices 30 to prevent external water and oxygen from entering the light-emitting devices and protect the film layer of the light-emitting devices 30. In order to better achieve the sealing effect, the material of the first encapsulation layer 50 may include an inorganic insulating material, such as one or more of silicon oxide, silicon nitride, titanium oxide, etc.

[0067] The display panel 100 may further include a second encapsulation layer 60 and a third encapsulation layer 70 to further enhance the encapsulation effect. The second encapsulation layer 60 is located on the side of the first encapsulation layer 50 away from the substrate 10, covering the isolation opening and the isolation structure 40. The third encapsulation layer 70 is located on the side of the second encapsulation layer 60 away from the substrate 10. The second encapsulation layer 60 and the third encapsulation layer 70 may extend from the display area AA to the non-display area SA, and their contours are located in the non-display area SA. The second encapsulation layer 60 is an organic layer, and the third encapsulation layer 70 is an inorganic layer.

[0068] The core technology for preparing the display panel 100 is the photolithography process, including: cleaning, film formation, coating, exposure, development, photoresist stripping, etching, inspection and other processes, wherein the exposure process usually uses an exposure machine to transfer the pattern on the mask to the film layer to be exposed corresponding to the mask. The quality of the mask is a very important part of the photolithography process.

[0069] Figure 5 Schematic diagram of the structure of an exposure machine in some embodiments. Figure 6 Schematic diagram of the structure of the lens module of the exposure machine in some examples. Figure 7 Schematic diagram of the structure of the lens module of the exposure machine in some other examples.

[0070] The process of transferring the mask pattern using an exposure machine is as follows: Figure 5 The exposure machine includes a light source, a lens module 220 and a stage 230. The mask 210' is located between the light source and the lens module 220. The stage 230 is located on the side of the lens module 220 away from the mask 210'. The lens module 220 includes a plurality of lenses 221. The light source emits light to the mask 210'. After passing through the mask 210' and the lenses 221, the light is irradiated onto the film layer to be exposed of the display panel located on the stage 240.

[0071] See also Figure 6 and Figure 7The lens 221 includes an overlapping area 2211 and a non-overlapping area 2212. The overlapping area 2211 of the lens is a lens area corresponding to the overlapping portion of the orthographic projections of two adjacent lenses on the stage 230, and the non-overlapping area 2212 of the lens is a lens area corresponding to the non-overlapping portion of the orthographic projections of two adjacent lenses on the stage 230. The light of the exposure machine is irradiated onto the mask, and then passes through the overlapping area 2211 and the non-overlapping area 2212 of the lens, with a certain degree of attenuation, and then irradiates onto the film layer to be exposed to complete the exposure.

[0072] Figure 8 The horizontal axis is the extension direction of the plane where the mask is located, and the vertical axis is the size of the light-transmitting area at different positions on the mask in some embodiments. Fig. 9 Schematic diagram of the structure of the film layer of the display panel in some embodiments. Fig.10 The horizontal axis is the extension direction of the plane where the film layer is located, which is parallel to the extension direction of the plane where the mask is located, and the vertical axis is the characteristic size of the corresponding area of ​​the light-transmitting area at different positions of the film layer and the mask.

[0073] Specifically, the mask includes a plurality of light-transmitting areas of the same size. In the exposure process, these light-transmitting areas of the same size are used to form patterns of the same size on the film layer. These light-transmitting areas can correspond to the lens overlap areas of the exposure machine respectively, that is, the orthographic projection of the light-transmitting area on the stage overlaps with the orthographic projection of the lens overlap area on the stage. The same size means that the width is the same, or the length is the same, or the width and length are the same. The width can be the size of the light-transmitting area along the first direction X, and the length can be the size of the light-transmitting area along the second direction Y. See Figure 8 The widths of the plurality of light-transmitting regions located at different positions of the mask are all the same. Of course, the lengths of the light-transmitting regions may be all the same, or the widths and lengths may be the same.

[0074] In theory, see Figure 6, the multiple lenses 221 of the lens module 220 are of the same size and parallel to each other. After the lenses are translated to the same height, the multiple lenses are fitted and spliced. The overlapping areas 2211 at one end of the multiple lenses 221 have the same width and length. After a portion of the light with an intensity of E0 passes through the overlapping area 2211 of the lens, the emitted light intensity is E1, and a portion of the light with an intensity of E0 passes through the non-overlapping area 2212, and the emitted light intensity is E2. Because the multiple lenses are fitted and spliced, the light passes through the same lens height when passing through the lens module. Therefore, the light intensity E1 is equal to the light intensity E2. After the light passes through the lens module, the light intensity irradiated on the film to be exposed is the same. That is to say, the light with intensity E0 has intensity E1 after passing through the overlapping area 2211 at different positions of the exposure machine in the XZ plane, the exposure intensity of the exposure area corresponding to the overlapping area 2211 at different positions on the film layer to be exposed is the same, the sizes of the multiple light-transmitting areas of the mask are the same, the characteristic size (width) of the pattern formed on the film layer to be exposed is also the same, and the size of the film layer pattern formed subsequently by other photolithography processes is also the same.

[0075] However, in practice, see Figure 7 The stitching accuracy of multiple lenses 221 is affected by the lens processing accuracy, equipment installation and debugging, etc., and it is impossible to achieve 100% fit and stitching, and there are stitching errors. The overlapping areas 2211 between some adjacent lenses 221 have different sizes in the first direction X and / or the second direction Y, that is, at least one of the width and length of the overlapping area is different. Light with an intensity of E0 passes through overlapping areas 2211 at different positions and passes through different lens heights. Part of the light intensity becomes E2, part of the light intensity becomes E3, part of the light intensity becomes E4, and part of the light intensity becomes E5. E2, E3, E4 and E5 are not the same. In other words, the light intensity is not the same when passing through different positions of the lens module, especially the light intensity is different when passing through different overlapping areas. See. Fig. 9 and Fig.10 After the light passes through the mask 210 and the lens module 220, it irradiates the exposure area of ​​the film to be exposed. Due to the splicing error of the lens splicing, the exposure intensity of the exposure area S of the film corresponding to the overlapping area is different from the exposure intensity of the non-overlapping area. The exposure intensity of the exposure area S and the overlapping areas at different positions is also different. In this way, when the size of the light-transmitting area of ​​the mask is the same, due to the lens splicing error, the size of the film pattern formed by the mask is different, and the characteristic size of the film has a sharp change in the overlapping area (for example, see Fig.10, the characteristic size of the film layer corresponding to the overlapping area of ​​the lens is greatly reduced, and illustratively, it can also be greatly increased), resulting in the presence of lens defects Lens Mura in the area corresponding to the overlapping area of ​​the film layer and the lens, affecting the characteristic size of the film layer. The superposition of multiple film layers causes differences between the key line width and set accuracy of the film layer of the display panel and those of standard products, resulting in lens defects in the display panel, thereby reducing the display effect of the display panel.

[0076] In order to solve the above problems, some embodiments use a method of adjusting the lens splicing position of the exposure machine to make multiple lenses more closely spliced, to adjust the exposure intensity of the film layer to be exposed corresponding to the lens overlapping area and non-overlapping area, so as to achieve the purpose of uniform exposure intensity. However, only adjusting the lens splicing position of the exposure machine still cannot guarantee uniform exposure. In addition, with the increase in the PPI required by display products, the number of pixel units and the number of sub-pixels in the display panel of the same area increase, and the density of pixel openings increases. The characteristic size accuracy of each film layer of the display panel is getting higher and higher, and the graphic density and single-layer accuracy required for the corresponding product design are getting higher and higher. The difference in characteristic size CD caused by the lens module of the exposure machine is more obvious on high PPI products.

[0077] In order to solve the above problems, an embodiment of the present application provides a mask plate, which reduces lens defects by adjusting the size of the light-transmitting area of ​​the mask plate.

[0078] Fig.11 A schematic diagram of an exemplary structure of a mask provided in an embodiment of the present application.

[0079] See also Fig.11, the mask 210 includes a shielding layer 211, and the shielding layer 211 is used to determine the exposure area. The shielding layer 211 includes a light-shielding area 2112 and a plurality of light-transmitting areas 2111. The light-shielding area 2112 is made of a light-blocking material, such as a black photoresist layer, a reflective metal layer, etc. The light-transmitting area 2111 can be an opening without a light-blocking material, and the opening passes through the shielding layer. The light-transmitting area 2111 can also be a transparent layer formed by a transparent material that can pass light. The light-shielding area 2112 blocks light, and the light-transmitting area 2111 allows light to pass through. The exposure light (such as ultraviolet light) is vertically irradiated onto the mask 210, a part of the light passes through the light-transmitting area 2111, and a part of the light is blocked by the light-shielding area. Under the action of the lens module of the exposure machine, the film layer to be exposed is exposed to the area corresponding to the light-transmitting area, and the film layer after exposure forms an exposure pattern corresponding to the pattern of the mask. Different film layers correspond to masks with different light-transmitting areas, and the pattern size of the mask corresponds to the pattern size of the film layer one by one. Exemplarily, the mask corresponding to the pixel definition layer is a pixel definition layer mask. When forming the pixel definition layer, an initial pixel definition layer is first formed, a photoresist is coated on the initial pixel definition layer, and then an exposure machine is used to transfer the pixel opening pattern of the pixel definition layer mask to the photoresist layer on the initial pixel definition layer. Subsequently, the pixel definition layer is formed through development, photoresist stripping, etching, inspection and other processes. The pixel definition layer is formed. The pixel definition layer mask includes a plurality of light-transmitting areas, each of which corresponds to a pixel opening, and the size of each light-transmitting area corresponds to the size of the pixel opening of the pixel definition layer, that is, the width of the light-transmitting area corresponds to the width of the pixel opening, and the length of the light-transmitting area corresponds to the length of the pixel opening. The size of the light-transmitting area of ​​the mask can directly affect the critical dimension (CD) of the film layer of the display panel.

[0080] Continue to see Fig.11 , the plurality of light-transmitting areas 2111 at least include a first light-transmitting area 2111a and a second light-transmitting area 2111b. The size of the first light-transmitting area 2111a is different from the size of the second light-transmitting area 2111b. Exemplarily, the width of the first light-transmitting area 2111a is different from the width of the second light-transmitting area 2111b. Again exemplarily, the length of the first light-transmitting area 2111a is different from the length of the second light-transmitting area 2111b. Again exemplarily, both the width and length of the first light-transmitting area 2111a are different from those of the second light-transmitting area 2111b. At least one of the first light-transmitting area 2111a and the second light-transmitting area 2111b corresponds to the overlapping area of ​​the lens, and the light of the exposure machine passes through at least one of the first light-transmitting area 2111a and the second light-transmitting area 2111b, and then passes through the overlapping area of ​​the lens to irradiate the film layer to be exposed.

[0081] In the first example, the first light-transmitting area 2111a corresponds to the overlapping area of ​​the lens, and the second light-transmitting area 2111b may also correspond to the overlapping area of ​​the lens. The first light-transmitting area 2111a and the second light-transmitting area 2111b correspond to the overlapping areas of the lenses at different positions, respectively. After the light passes through the first light-transmitting area 2111a, it passes through the overlapping area of ​​the lens to form a film pattern (hereinafter referred to as the first film pattern). The size of the first film pattern is adjusted by the first light-transmitting area 2111a and the overlapping area. After the light passes through the second light-transmitting area 2111b, it passes through the overlapping area of ​​the lens to form a film pattern (hereinafter referred to as the second film pattern). The size of the second film pattern is adjusted by the second light-transmitting area 2111b and the overlapping areas of the lenses at different positions. Since the sizes of the first light-transmitting area 2111a and the second light-transmitting area 2111b are different, the attenuation degree of the light in the overlapping areas of the lenses at different positions is different. The two interact with each other, and the size of the film pattern formed is the same. In this way, the film layer patterns at different positions of the film layer are corrected through the mask to form film layer patterns of the same size, thereby reducing the lens defects in the area corresponding to the overlapping area of ​​the film layer and the lens, thereby correcting the characteristic size of the film layer. Multiple film layers are superimposed to reduce the difference between the key line width and set accuracy of the film layer of the display panel and the standard product, thereby avoiding lens defects in the display panel and improving the display effect of the display panel.

[0082] In the second example, the first light-transmitting area 2111a corresponds to the overlapping area of ​​the lens, and the second light-transmitting area 2111b corresponds to the non-overlapping area of ​​the lens. After passing through the first light-transmitting area 2111a, the light passes through the overlapping area of ​​the lens to form a film pattern. The size of the first film pattern is adjusted by the first light-transmitting area 2111a and the overlapping area. After passing through the second light-transmitting area 2111b, the light passes through the non-overlapping area of ​​the lens to form a film pattern. The size of the second film pattern is adjusted by the second light-transmitting area 2111b and the non-overlapping area of ​​the lens. Since the sizes of the first light-transmitting area 2111a and the second light-transmitting area 2111b are different, the attenuation degree of the light in the overlapping area of ​​the lens and the non-overlapping area of ​​the lens is different, and the two interact with each other to form the same size of the film pattern. In this way, the film layer patterns at different positions of the film layer are corrected through the mask to form film layer patterns of the same size, thereby reducing the lens defects in the areas corresponding to the overlapping and non-overlapping areas of the film layer and the lens, thereby correcting the characteristic size of the film layer. Multiple film layers are superimposed to reduce the difference between the key line width and set accuracy of the film layer of the display panel and the standard products, thereby avoiding lens defects in the display panel and improving the display effect of the display panel.

[0083] In the third example, the first light-transmitting area 2111a corresponds to the non-overlapping area of ​​the lens, and the second light-transmitting area 2111b corresponds to the overlapping area of ​​the lens. After passing through the first light-transmitting area 2111a, the light passes through the lens overlapping area to form a film pattern. The size of the first film pattern is adjusted by the first light-transmitting area 2111a and the non-overlapping area. After passing through the second light-transmitting area 2111b, the light passes through the lens overlapping area to form a film pattern. The size of the second film pattern is adjusted by the second light-transmitting area 2111b and the lens overlapping area. Since the sizes of the first light-transmitting area 2111a and the second light-transmitting area 2111b are different, the attenuation degree of the lens overlapping area and the non-overlapping area of ​​the lens is different. The two interact with each other, and the size of the film pattern formed is the same. The beneficial effects can be seen in the second example above, which will not be repeated here.

[0084] In some implementations, the first light-transmitting area 2111a and the second light-transmitting area 2111b may correspond to non-overlapping areas of lenses at different positions, respectively. After passing through the first light-transmitting area 2111a, the light passes through the non-overlapping area of ​​the lens to form a film pattern. The size of the first film pattern is adjusted by the first light-transmitting area 2111a and the non-overlapping area. After passing through the second light-transmitting area 2111b, the light passes through the non-overlapping area of ​​the lens to form a film pattern. The size of the second film pattern is adjusted by the second light-transmitting area 2111b and the non-overlapping areas of lenses at different positions. Since the sizes of the first light-transmitting area 2111a and the second light-transmitting area 2111b are different, the attenuation degree of the non-overlapping areas of lenses at different positions is different. The two interact with each other to form the same size of the film pattern. In this way, the film patterns at different positions of the film layer are corrected by the mask to form film patterns of the same size, which can improve the display effect of the display panel.

[0085] In some embodiments, see Fig.11, the size of the first light-transmitting area 2111a is smaller than the size of the second light-transmitting area 2111b. Exemplarily, the width of the first light-transmitting area 2111a is smaller than the width of the second light-transmitting area 2111b. Exemplarily, the length of the first light-transmitting area 2111a is smaller than the length of the second light-transmitting area 2111b. Exemplarily, both the width and length of the first light-transmitting area 2111a are smaller than the second light-transmitting area 2111b. The first light-transmitting area 2111a corresponds to the first area of ​​the lens module, and the second light-transmitting area 2111b corresponds to the second area of ​​the lens module. When the mask has not been corrected, the size of the film pattern formed after the light is exposed through the first area is larger than the size of the film pattern formed after the light is exposed through the second area. The size of the first light-transmitting area 2111a corresponding to the first area should be smaller than the size of the second light-transmitting area 2111b corresponding to the second area, so that the size of the film pattern corresponding to the first light-transmitting area 2111a is smaller than the size of the film pattern corresponding to the second light-transmitting area 2111b. The size difference between the film pattern corresponding to the first light-transmitting area 2111a and the film pattern corresponding to the second light-transmitting area 2111b is reduced, the lens defects of the film are reduced, and the characteristic size of the film is corrected. Multiple film layers are superimposed, and the difference between the key line width and the set accuracy of the film layer of the display panel and the standard products is reduced, so as to avoid the generation of lens defects in the display panel and thereby improve the display effect of the display panel.

[0086] In some embodiments, the size of the first light-transmitting area 2111a is greater than the size of the second light-transmitting area 2111b. Exemplarily, the width of the first light-transmitting area 2111a is greater than the width of the second light-transmitting area 2111b. Exemplarily, the length of the first light-transmitting area 2111a is greater than the length of the second light-transmitting area 2111b. Exemplarily, both the width and length of the first light-transmitting area 2111a are greater than the second light-transmitting area 2111b. When the mask has not been corrected, the size of the film pattern formed after the light is exposed through the first area is smaller than the size of the film pattern formed after the light is exposed through the second area, and the size of the first light-transmitting area 2111a corresponding to the first area should be larger than the size of the second light-transmitting area 2111b corresponding to the second area, so that the size of the film pattern corresponding to the first light-transmitting area 2111a is larger than the size of the film pattern corresponding to the second light-transmitting area 2111b. In this way, the size difference between the film pattern corresponding to the first light-transmitting area 2111a and the film pattern corresponding to the second light-transmitting area 2111b is reduced, the lens defects of the film layer are reduced, and the characteristic size of the film layer is corrected. Multiple film layers are superimposed, and the difference between the key line width and the set accuracy of the film layer of the display panel and the standard products is reduced, avoiding the display panel from having lens defects, thereby improving the display effect of the display panel.

[0087] In some embodiments, the shape of the first light-transmitting area 2111a is the same as that of the second light-transmitting area 2111b, for example, both are circular, elliptical, rectangular, square, polygonal, etc. The shapes of the first light-transmitting area 2111a and the second light-transmitting area 2111b can be similar figures, and the width and length of the first light-transmitting area 2111a are both larger or smaller than those of the second light-transmitting area 2111b. In this way, the film layer formed after the light passes through the first light-transmitting area 2111a and the film layer formed after the light passes through the second light-transmitting area 2111b can be corrected in width and length to reduce lens defects and improve the display performance of the display panel.

[0088] In some embodiments, the size difference between the first light-transmitting area 2111a and the second light-transmitting area 2111b is greater than 0.3 μm. Exemplarily, the width difference between the first light-transmitting area 2111a and the second light-transmitting area 2111b is greater than 0.3 μm, and again exemplary, the length difference between the first light-transmitting area 2111a and the second light-transmitting area 2111b is greater than 0.3 μm, and again exemplary, the width and length differences between the first light-transmitting area 2111a and the second light-transmitting area 2111b are both greater than 0.3 μm. When the difference is less than or equal to 0.3 μm, the film pattern correction effect formed after the light passes through the first light-transmitting area 2111a and the second light-transmitting area 2111b is more obvious.

[0089] In some embodiments, see Fig.11 The plurality of light-transmitting areas 2111 further include a third light-transmitting area 2111c. The third light-transmitting area 2111c is different in size from the first light-transmitting area 2111a and the second light-transmitting area 2111b. In this way, the size of the film pattern formed by the light passing through the first light-transmitting area 2111a, the second light-transmitting area 2111b and the third light-transmitting area 2111c is corrected to reduce the size difference between the film patterns. The size changes of the plurality of light-transmitting areas 2111 can improve the accuracy of correction, further reduce lens defects, and improve display effects.

[0090] In some implementations, the plurality of light-transmitting regions 2111 further include a fourth light-transmitting region 2111d, and the fourth light-transmitting region 2111d has a size different from that of the first light-transmitting region 2111a, the second light-transmitting region 2111b, and the third light-transmitting region 2111c.

[0091] In some embodiments, see Fig.11 The mask plate 210 further includes a carrier layer 212, and the carrier layer 212 is stacked with the shielding layer 211. The carrier layer 212 can support the shielding layer 211, and the carrier layer 212 is a light-transmitting layer, such as a glass substrate.

[0092] In some embodiments, see Fig.11The mask 210 further includes a pillar 213. The pillar 213 is disposed between the bearing layer 212 and the shielding layer 211, and is used to support the bearing layer 212 and the shielding layer 211. The orthographic projection of the pillar 213 on the bearing layer 212 is located in the light shielding area within the orthographic projection of the bearing layer 212, so as to prevent the pillar 213 from blocking the passage of light.

[0093] The embodiment of the present application also provides a method for preparing a mask. The mask formed by the preparation method in an exposure machine can reduce lens defects caused by the exposure machine.

[0094] Fig.12 A flowchart of a method for preparing a mask provided in an embodiment of the present application. In conjunction with the accompanying drawings, a method for preparing a display panel provided in some embodiments of the present disclosure is schematically described below.

[0095] S1. Provide an initial mask. The initial mask includes an initial shielding layer, and the pattern of the initial mask corresponds to the pattern of the film layer to be exposed of the display panel. The initial shielding layer includes an initial light-shielding area and an initial light-transmitting area, and the pattern of the initial mask is formed by the initial light-shielding area and the initial light-transmitting area. The materials and structures of the initial light-shielding area and the initial light-transmitting area can refer to the description of the light-shielding area and the light-transmitting area above, and will not be repeated here.

[0096] S2. Performing a feature size deviation test on the first region of the initial mask using an exposure machine to obtain an initial value of the feature size of the first region of the initial mask.

[0097] The exposure machine includes a light source, a lens module 220 and a stage 230, and the initial mask is arranged between the light source and the lens module 220. The light emitted by the light source passes through the initial mask and the lens module 220, and then irradiates the film layer to be exposed on the display panel located on the stage 230, forming a corresponding exposure pattern. At this time, the initial mask corresponds to the lens module 220, and the area corresponding to the initial mask and the overlapping area of ​​the lens is the first area. Along the extension direction of the initial mask 210 (the extension direction of the XY plane), the width of the first area is the same as the width of the overlapping area of ​​the lens, and the length of the first area is the same as the length of the overlapping area of ​​the lens.

[0098] Performing a feature size deviation test on the first area of ​​the initial mask using an exposure machine refers to comparing the film layer pattern formed using the initial mask with the film layer pattern of a standard product. It is understood that the standard product is a film layer of a display panel produced by an exposure process when there is no overlapping area of ​​the lens of the exposure machine.

[0099] Since the lens module 220 generates a lens defect, there is a deviation between the size (including width and length) of the film pattern formed by the first area of ​​the initial mask and the film pattern of the standard product corresponding to the first area. The deviation value of the characteristic size between the film pattern formed by the first area of ​​the initial mask and the film pattern of the standard product corresponding to the first area is obtained by comparing the two, and the characteristic size of the first area of ​​the initial mask is obtained by reverse deduction. At this time, the characteristic size of the first area of ​​the initial mask is the initial value, and the characteristic size of the film pattern of the standard product corresponding to the first area of ​​the initial mask is the standard value, and the standard values ​​corresponding to different products are different. The difference between the characteristic size of the first area of ​​the initial mask and the characteristic size of the film pattern of the corresponding standard product is the deviation value, that is, the deviation value is the difference between the initial value and the standard value.

[0100] S3. Based on the initial value, the first area of ​​the initial mask is corrected to form a shielding layer.

[0101] Compare the initial value with the standard value. If there is a deviation value (the difference between the initial value and the standard value), it is necessary to correct the first area of ​​the initial mask and redesign the pattern of the mask. In other words, redesign the sizes of the multiple light-transmitting areas of the mask so that the feature size between the film pattern formed by the mask and the film pattern of the standard product is the same. The first area of ​​the initial mask is corrected to form a shielding layer. The shielding layer includes a light-shielding area and multiple light-transmitting areas. The multiple light-transmitting areas include at least a first light-transmitting area and a second light-transmitting area. The size of the first light-transmitting area is different from the size of the second light-transmitting area. The material and structure of the shielding layer can be found in the description of the shielding layer above, which will not be repeated here.

[0102] After the light passes through the corrected first area (the area corresponding to the overlapping area of ​​the mask and the lens), it irradiates the film layer to be exposed on the display panel. The characteristic size of the formed film layer pattern is approximately the same as the characteristic size of the standard product. In this way, by correcting the size of the initial mask to form a new mask, the difference between the characteristic size of the film layer pattern and the characteristic size of the standard product can be reduced, the lens defects of the product can be improved, and the display performance of the product can be improved.

[0103] In some embodiments, step S3 corrects the first area of ​​the initial mask based on the initial value to form a patterned shielding layer, including:

[0104] S31. Compare the deviation value with the deviation threshold.

[0105] Since the characteristic sizes of the film layer patterns of the standard products corresponding to different products are different, different products need to correspond to different masks.

[0106] S32, if the deviation value is greater than the deviation threshold, it means that the feature size corresponding to the first area of ​​the initial mask plate is significantly different from the feature size of the standard product, and the first area of ​​the initial mask plate needs to be corrected. If the deviation value is less than or equal to the deviation threshold, it means that the feature size corresponding to the first area of ​​the initial mask plate is slightly different from the feature size of the standard product, and the first area of ​​the initial mask plate does not need to be corrected.

[0107] By setting the deviation threshold, when the deviation error is small, the initial mask can be directly used for the exposure process to avoid waste.

[0108] In some embodiments, the deviation threshold is 0.1-0.3μm, such as 0.1μm, 0.15μm, 0.2μm, 0.3μm, etc. If the deviation threshold is too large, then when the deviation value is compared with the deviation threshold, even if the deviation value is large, it is still smaller than the deviation threshold, resulting in the step of comparing the deviation value with the deviation threshold, judging that the deviation value is too small, and not correcting the first area of ​​the initial mask, which will result in a large size difference between the film layer to be exposed and the film layer of the standard product, and the lens defect is too large, affecting the display effect of the display panel. If the deviation threshold is too small, then when the deviation value is compared with the deviation threshold, even if the deviation value is small, the resulting lens defect is small, and the display performance of the display panel is less affected, but because the deviation value is still greater than the deviation threshold, it is still necessary to correct the first area of ​​the initial mask, resulting in increased costs.

[0109] In some embodiments, the first area of ​​the initial mask is corrected, including: if the initial value is greater than the standard value, it means that the size corresponding to the first area on the initial mask is too large, resulting in a larger size of the pattern formed by the film layer to be exposed, then it is necessary to reduce the size (including width and / or length) of the first area of ​​the initial mask. After the light passes through the first area, the characteristic size of the film layer pattern formed becomes smaller, reducing the error with the standard value, thereby reducing lens defects.

[0110] If the initial value is equal to the standard value, it means that the size corresponding to the first area on the initial mask is the same as the characteristic size of the standard product, the first area is of appropriate size, and the characteristic size of the exposure pattern generated after the light passes through the first area is the same as the characteristic size of the standard product, then the first area of ​​the initial mask remains unchanged.

[0111] If the initial value is smaller than the standard value, it means that the size corresponding to the first area on the initial mask is too small, resulting in a small size of the pattern of the film layer to be exposed. Then it is necessary to increase the size of the first area of ​​the initial mask. After the light passes through the first area, the characteristic size of the film layer pattern formed becomes larger, and the error between the standard value is reduced to reduce lens defects.

[0112] In some embodiments, in the step of reducing the size of the first area of ​​the initial mask, the first size is less than or equal to the deviation value, and at this time, the size of the first light-transmitting area is less than the size of the second light-transmitting area. The first size is the reduced size of the first area of ​​the initial mask, and includes at least one of the reduced sizes of width and length. If the first size is too large, the size of the first area of ​​the initial mask will be too small, and the characteristic size of the film layer pattern corresponding to the first area of ​​the mask will become smaller, so that the characteristic size of the overlapped area of ​​the prepared film layer is too small, resulting in lens defects.

[0113] In some embodiments, in the step of increasing the first area of ​​the initial mask, the second size is less than or equal to the deviation value, and the second size is the increased size of the first area of ​​the initial mask. At this time, the size of the first light-transmitting area is larger than the size of the second light-transmitting area. If the second size is too large, the size of the first area of ​​the initial mask in the extension direction of the initial mask will be too large, and the characteristic size of the film layer corresponding to the first area of ​​the mask will become larger, so that the characteristic size of the prepared film layer corresponding to the overlapping area is too large, resulting in lens defects.

[0114] Fig.13 A schematic diagram of an exemplary structure of a mask provided in an embodiment of the present application.

[0115] In some embodiments, the first area of ​​the initial mask is corrected, and further includes: forming a light shielding film, which can be arranged on one side of the initial shielding layer. The light transmittance of the light shielding film is less than the light transmittance of the lens. The light shielding film is generally a chrome film, and the light shielding film is arranged on one side of the shielding layer to reduce the intensity of light.

[0116] If the initial value is greater than the standard value, it means that the intensity of the light irradiated to the area corresponding to the overlapping area of ​​the film layer to be exposed exceeds the intensity of the light irradiated to the area corresponding to the non-overlapping area of ​​the film layer to be exposed, resulting in uneven exposure intensity of the film layer to be exposed. Therefore, on the side of the initial shielding layer, for example, see Fig.13 , the light shielding film 214 is located on the side of the shielding layer 211 away from the carrier layer 212. The light shielding film and the overlapping area of ​​the lens are arranged opposite to each other, and the light shielding film 214 and the overlapping area of ​​the lens overlap on the orthographic projection of the carrier, so that the intensity of the light irradiated to the area corresponding to the overlapping area on the display motherboard can be reduced, and the difference between the photoelectric intensity of the corresponding area of ​​the display motherboard and the overlapping area and the non-overlapping area can be reduced, so as to achieve uniform exposure intensity and reduce lens defects.

[0117] If the initial value is smaller than the standard value, it means that the intensity of light irradiated to the area corresponding to the overlapping area of ​​the film layer to be exposed is less than the intensity of light irradiated to the area corresponding to the non-overlapping area on the display motherboard, resulting in uneven exposure intensity of the film layer to be exposed. Therefore, a shading film is arranged on one side of the shielding layer, and the shading film is arranged opposite to the non-overlapping area of ​​the lens. In this way, the intensity of light irradiated to the area corresponding to the film layer to be exposed and the non-overlapping area can be reduced, and the difference between the photoelectric intensity of the area corresponding to the overlapping area and the non-overlapping area of ​​the display motherboard can be reduced, thereby achieving uniform exposure intensity to alleviate lens defects.

[0118] In some embodiments, see Fig.13 , the mask 210 also includes a light shielding film 214. The light shielding film 214 is arranged on one side of the shielding layer, and the light transmittance of the light shielding film 214 is less than the light transmittance of the lens. Exemplarily, the light shielding film 214 is arranged relative to the overlapping area of ​​the lens, at this time, the orthographic projection of the light shielding film 214 on the shielding layer overlaps with the orthographic projection of the overlapping area of ​​the lens on the shielding layer, reducing the intensity of the light irradiated to the area corresponding to the overlapping area on the display motherboard, reducing the difference between the photoelectric intensity of the display motherboard and the corresponding area of ​​the overlapping area and the non-overlapping area, thereby achieving a uniform exposure intensity to reduce the lens defects. Exemplarily again, the light shielding film 214 is arranged relative to the non-overlapping area of ​​the lens, at this time, the orthographic projection of the light shielding film 214 on the shielding layer overlaps with the orthographic projection of the non-overlapping area of ​​the lens on the shielding layer, reducing the intensity of the light irradiated to the area corresponding to the non-overlapping area on the display motherboard, reducing the difference between the photoelectric intensity of the display motherboard and the corresponding area of ​​the overlapping area and the non-overlapping area, thereby achieving a uniform exposure intensity to reduce the lens defects.

[0119] In some embodiments, the thickness of the light shielding film 214 ranges from 0.5 to 3 μm, such as 0.5 μm, 1 μm, 1.3 μm, 2 μm, 2.5 μm, 3 μm, etc.

[0120] Fig.14 A schematic diagram of an exemplary structure of a mask provided in an embodiment of the present application.

[0121] In some embodiments, the first area of ​​the initial mask is corrected, and further includes: forming an optical compensation film 215, the light transmittance of the optical compensation film is greater than the light transmittance of the lens, and the intensity of light can be increased.

[0122] If the initial value is greater than the standard value, it means that the intensity of the light irradiated to the area corresponding to the overlapped area of ​​the film layer to be exposed exceeds the intensity of the light irradiated to the area corresponding to the non-overlapped area on the display motherboard, resulting in uneven exposure intensity on the display motherboard. Therefore, on the side of the initial shielding layer, for example, see Fig.14The optical compensation film 215 is located on the side of the shielding layer 211 away from the supporting layer 212. As an example, the optical compensation film 215 can also be located on the side of the shielding layer 211 close to the supporting layer 212. The optical compensation film 215 is arranged relative to the non-overlapping area of ​​the lens. In this way, the intensity of light irradiated to the area corresponding to the film layer to be exposed and the non-overlapping area can be increased, and the difference between the photoelectric intensity of the area corresponding to the film layer to be exposed and the overlapping area and the non-overlapping area can be reduced, thereby achieving uniform exposure intensity to reduce lens defects.

[0123] If the deviation value is smaller than the standard value, it means that the intensity of light irradiated to the area corresponding to the overlapping area of ​​the film layer to be exposed is less than the intensity of light irradiated to the area corresponding to the non-overlapping area of ​​the film layer to be exposed, resulting in uneven exposure intensity of the film layer to be exposed. Therefore, an optical compensation film 215 is arranged on one side of the initial shielding layer, and the optical compensation film 215 is arranged relative to the overlapping area of ​​the lens. In this way, the intensity of light irradiated to the area corresponding to the overlapping area of ​​the film layer to be exposed can be increased, and the difference between the photoelectric intensity of the area corresponding to the overlapping area and the non-overlapping area of ​​the film layer to be exposed can be reduced, thereby achieving uniform exposure intensity to reduce lens defects.

[0124] In some embodiments, see Fig.14 , the mask 210 also includes an optical compensation film 215. The optical compensation film 215 is arranged on one side of the shielding layer. Exemplarily, the optical compensation film 215 is arranged on the side of the shielding layer away from the stage. Exemplarily, the optical compensation film 215 is arranged on the side of the shielding layer close to the stage. The light transmittance of the optical compensation film 215 is greater than the light transmittance of the lens. Exemplarily, the optical compensation film 215 is arranged relative to the non-overlapping area of ​​the lens, which can increase the intensity of the light irradiated to the area corresponding to the non-overlapping area on the display motherboard, and reduce the difference between the photoelectric intensity of the display motherboard and the corresponding area of ​​the overlapping area and the non-overlapping area, so as to achieve a uniform exposure intensity to reduce lens defects. Exemplarily, the optical compensation film 215 is arranged relative to the overlapping area of ​​the lens. The intensity of the light irradiated to the area corresponding to the overlapping area on the display motherboard can be increased, and the difference between the photoelectric intensity of the display motherboard and the corresponding area of ​​the overlapping area and the non-overlapping area can be reduced, so as to achieve a uniform exposure intensity to reduce lens defects.

[0125] In some embodiments, the mask 210 further includes a light shielding film and an optical compensation film. The light shielding film and the optical compensation film can be arranged on the same side of the shielding layer, or respectively arranged on both sides of the shielding layer away from the carrier. The light shielding film is arranged relative to the overlapping area of ​​the lens, and in this case, the optical compensation film is arranged relative to the non-overlapping area of ​​the lens. Alternatively, the light shielding film is arranged relative to the non-overlapping area of ​​the lens, and in this case, the optical compensation film is arranged relative to the overlapping area of ​​the lens.

[0126] S4, forming a mask. The structure and material of the mask can refer to the description of the mask above, and will not be repeated here.

[0127] Fig.15 A schematic diagram of the structure of an exposure machine provided in an embodiment of the present application. Fig.16 The sizes of the light-transmitting areas at different positions on the mask provided in the embodiment of the present application are shown in FIG. The horizontal axis is the extension direction of the plane where the mask is located, and the vertical axis is the sizes of the light-transmitting areas at different positions on the mask. Fig.17 A schematic diagram of the structure of a film layer of a display panel provided in an embodiment of the present application. Fig.18 The characteristic size of the film layer formed by the mask provided in the embodiment of the present application. The horizontal axis is the extension direction of the plane where the film layer is located, which is parallel to the extension direction of the plane where the mask is located, and the vertical axis is the characteristic size of the corresponding area of ​​the light-transmitting area at different positions of the film layer and the mask.

[0128] The embodiment of the present application utilizes an exposure machine to perform a feature size deviation test on the first area of ​​the initial mask, corrects the initial mask based on the obtained feature size deviation value of the first area of ​​the initial mask, and pre-compensates the overlapped area of ​​the lens on the initial mask to form a new mask.

[0129] In the mask design stage, the lens defects are pre-compensated. Specifically, the deviation value is smaller than the standard value, and the feature size of the first area is increased. Fig.16 , the size value of the corresponding area on the mask becomes larger. Using the above mask, in the film layer to be exposed formed by the exposure process, see Fig.17 and Fig.18 , the area corresponding to the overlapping area of ​​the display panel 100 and the lens has a slower change in feature size, and the difference between feature sizes is reduced. The sizes of the light-transmitting areas of the mask are different. Due to the lens splicing error, the size of the film pattern formed by the mask is pre-compensated by the light-transmitting areas of different sizes, so that the feature size of the film changes slowly in the overlapping area, so as to achieve the purpose of offsetting and weakening the lens defects on the display panel, reduce the impact of the lens splicing of the exposure machine on the product yield, improve the lens defect problem of the product, and thus improve the display performance.

[0130] Continue to see Fig.15, an embodiment of the present application further provides an exposure machine 200, comprising a light source for emitting light, a lens module 220 and a stage 230. The mask 210 is arranged between the light source and the lens module 220, and the stage 230 is located on the side of the lens module 220 away from the light source. The light source emits light to the mask 210, and the light is irradiated onto the display panel located on the stage 230 after passing through the mask 210 and the lens module 220. Among them, the lens module 220 includes a plurality of lenses, and the lenses include overlapping areas and non-overlapping areas. The overlapping areas are lens areas corresponding to the overlapping parts of the orthographic projections of two adjacent lenses on the stage, and the non-overlapping areas are lens areas corresponding to the non-overlapping parts of the orthographic projections of two adjacent lenses on the stage.

[0131] The exposure machine uses the mask described in the above embodiment, or a mask made by the mask preparation method described in the above embodiment. When the exposure light (such as ultraviolet light) is vertically irradiated onto the mask 210 and passes through the light-transmitting area, the area with the same pattern as the light-transmitting area is exposed under the action of the lens module 220, and a corresponding exposure pattern is formed on the film layer to be exposed of the display panel. The exposure machine provided by the embodiment of the present application can reduce lens defects and improve the display performance of the display panel.

[0132] In some embodiments, the exposure machine further includes a mask frame 240. The mask frame 240 is in a closed loop shape, and is surrounded to form a hollow area, and the mask plate 210 is placed on the mask frame 240. The mask frame 240 plays a role in supporting the mask plate 210, and the light passes through the mask plate 210, passes through the hollow area of ​​the mask frame 240, and enters the lens module 220.

[0133] The display panel 100 provided in the embodiment of the present application is prepared using the mask plate described in the above embodiment, or is prepared using a mask plate made using the mask plate preparation method described in the above embodiment, or is prepared using, for example, an exposure machine described in the above embodiment. The display panel 100 has reduced lens defects and improved display performance.

[0134] The above implementation methods are only used to illustrate the embodiments of the present application, and are not limitations on the embodiments of the present application. Ordinary technicians in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the embodiments of the present application. Therefore, all equivalent technical solutions also belong to the scope of the embodiments of the present application. The scope of patent protection of the embodiments of the present application should be limited by the claims.

Claims

1. A mask, characterized in that: The shielding layer includes a shielding area and a plurality of light-transmitting areas. The plurality of light-transmitting areas include at least a first light-transmitting area and a second light-transmitting area. The size of the first light-transmitting area is different from the size of the second light-transmitting area.

2. The mask according to claim 1, characterized in that: The size of the first light-transmitting area is smaller than that of the second light-transmitting area.

3. The mask according to claim 1, characterized in that: The size of the first light-transmitting area is greater than that of the second light-transmitting area.

4. The mask according to claim 1, characterized in that: The shape of the first light-transmitting area is the same as the shape of the second light-transmitting area.

5. The mask according to claim 1, characterized in that: The size difference between the first light-transmitting area and the second light-transmitting area is greater than 0.3 μm.

6. The mask according to claim 1, characterized in that: The plurality of light-transmitting regions further include a third light-transmitting region, and a size of the third light-transmitting region is different from sizes of the first light-transmitting region and the second light-transmitting region.

7. The mask according to claim 1, characterized in that: Also includes: A bearing layer, stacked with the shielding layer; A support column is arranged between the bearing layer and the shielding layer; The orthographic projection of the pillar on the bearing layer is located within the orthographic projection of the shading area on the bearing layer.

8. A method for preparing a mask, characterized in that: include: Provide initial mask; The initial mask plate includes an initial shielding layer, and the initial shielding layer includes an initial light-shielding area and a plurality of initial light-transmitting areas; An exposure machine is used to perform a feature size deviation test on the first area of ​​the initial mask to obtain an initial value of the feature size of the first area of ​​the initial mask; the exposure machine includes a light source, a lens module and a stage, and the initial mask is located between the light source and the lens module; the light emitted by the light source passes through the initial mask and the lens module and then irradiates the stage; the lens module includes a plurality of lenses, and the lenses include overlapping areas and non-overlapping areas, the overlapping areas are lens areas corresponding to the overlapping parts of the orthographic projections of two adjacent lenses on the stage, and the non-overlapping areas are lens areas corresponding to the non-overlapping parts of the orthographic projections of two adjacent lenses on the stage; The first area of ​​the initial mask is an area corresponding to the initial mask and the overlapping area; Based on the initial value, the first area of ​​the initial mask is corrected to form a shielding layer; the shielding layer includes a light-shielding area and a plurality of light-transmitting areas; the plurality of light-transmitting areas include at least a first light-transmitting area and a second light-transmitting area, and the size of the first light-transmitting area is different from the size of the second light-transmitting area; A mask is formed, wherein the mask includes the blocking layer.

9. The method for preparing a mask according to claim 8, characterized in that: The method of modifying the first area of ​​the initial mask based on the initial value to form a shielding layer includes: Compare the deviation value with the deviation threshold. If the deviation value is greater than the deviation threshold, correct the first area of ​​the initial mask. If the deviation value is equal to or less than the deviation threshold, the initial shielding layer is the shielding layer. The deviation value is the difference between the initial value and the standard value.

10. The method for preparing a mask according to claim 9, characterized in that: The deviation threshold is 0.1 μm-0.3 μm.

11. The method for preparing a mask according to claim 9 or 10, characterized in that: The correcting the first area of ​​the initial mask includes: If the initial value is greater than the standard value, reducing the size of the first area of ​​the initial mask; If the initial value is equal to the standard value, the size of the first area of ​​the initial mask remains unchanged; If the initial value is smaller than the standard value, the size of the first area of ​​the initial mask is increased.

12. The method for preparing a mask according to claim 11, characterized in that: In the step of reducing the size of the first area of ​​the initial mask, the first size is less than or equal to the deviation value, and the first size is the reduced size of the first area of ​​the initial mask; The deviation value is the difference between the initial value and the standard value.

13. The method for preparing a mask according to claim 11, characterized in that: In the step of increasing the size of the first area of ​​the initial mask, the second size is less than or equal to the deviation value, and the second size is the increased size of the first area of ​​the initial mask; the deviation value is the difference between the initial value and the standard value.

14. The method for preparing a mask according to claim 11, characterized in that: The correcting the first area of ​​the initial mask also includes: forming a light shielding film, wherein the light shielding film is disposed on one side of the initial shielding layer; and the light transmittance of the light shielding film is less than the light transmittance of the lens; If the initial value is greater than the standard value, the light shielding film and the overlapping area of ​​the lens are arranged relative to each other; If the initial value is smaller than the standard value, the light shielding film is disposed opposite to the non-overlapping area of ​​the lens.

15. The method for preparing a mask according to claim 8, characterized in that: The correcting the first area of ​​the initial mask also includes: forming an optical compensation film, wherein the optical compensation film is disposed on one side of the initial shielding layer; and the light transmittance of the optical compensation film is greater than the light transmittance of the lens; If the initial value is greater than the standard value, the optical compensation film is disposed opposite to the non-overlapping area of ​​the lens; If the initial value is smaller than the standard value, the optical compensation film and the overlapping area of ​​the lens are arranged opposite to each other.

16. An exposure machine, characterized in that: A mask plate made by using the mask plate according to any one of claims 1 to 7, or a mask plate made by using the mask plate preparation method according to any one of claims 8 to 15; comprising: A light source for emitting light; The lens module comprises a plurality of lenses, wherein the lenses comprise an overlapping region and a non-overlapping region, wherein the overlapping region is a lens region corresponding to a portion where the orthographic projections of two adjacent lenses on the carrier overlap, and the non-overlapping region is a lens region corresponding to a portion where the orthographic projections of two adjacent lenses on the carrier do not overlap; A carrier, located at a side of the lens module away from the light source; Wherein, the mask is located between the light source and the lens module.

17. A display panel, characterized in that: The method is formed by using the mask plate as described in any one of claims 1 to 7, or by using the mask plate made by the mask plate preparation method as described in any one of claims 8 to 15, or by using the exposure machine as described in claim 16.

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