Workpiece processing apparatus with external gas channel insert

Abstract

The present disclosure provides a gas injection assembly for injecting a gas into a processing chamber, the gas injection assembly comprising: a dome wherein the dome comprises a plurality of gas feed ports; and, a gas channel insert, where the gas channel insert comprises: an inlet for receiving a gas flow; and a plurality of sub-channels for distributing the gas flow from the inlet to the plurality of gas feed ports in the dome, where the plurality of sub-channels are positioned in a vertical arrangement between the inlet and the plurality of gas feed ports, the plurality of sub-channels partially defining an interior of the gas channel insert to subdivide the gas flow received by the inlet in the plurality of outlet sub-channels.

Description

[0001] This application is a divisional application of the Chinese application entitled “Workpiece processing device with external gas channel insert”, filed on December 23, 2021, and with application number 202111587556.1. Technical Field

[0002] The present disclosure relates generally to semiconductor processing equipment, such as equipment operable to inject a gas into a processing region of a workpiece processing device. Background Art

[0003] A workpiece processing apparatus may define a processing chamber configured to accommodate a workpiece, such as a semiconductor wafer. Different types of workpiece processing apparatus (e.g., thermal processing systems and / or plasma processing systems) may perform various processing processes (e.g., plasma etching, plasma deposition, rapid thermal processing) on ​​a workpiece to modify or otherwise process it. However, when processing a workpiece, certain portions of the workpiece may be affected at different rates, which may result in anomalies or other defects associated with the workpiece.

[0004] Workpiece processing apparatus used in modern applications often use plasma control or temperature sensors and other mechanisms to control process uniformity and / or workpiece uniformity during the processing process. However, implementing such mechanisms may be inefficient or costly. Therefore, there is a need for improved semiconductor processing equipment. Summary of the invention

[0005] Aspects and advantages of the embodiments of the present disclosure will be set forth in part in the following description, or may be learned from the description, or may be learned through practice of the embodiments.

[0006] One aspect of the present disclosure relates to a gas injection assembly for injecting gas into a processing chamber, the gas injection assembly comprising: a dome, wherein the dome includes a plurality of gas feed ports; and a gas channel insert, wherein the gas channel insert includes: an inlet for receiving a gas flow; a plurality of sub-channels for distributing a gas flow from the inlet to the plurality of gas feed ports in the dome, wherein the plurality of sub-channels are positioned between the inlet and the plurality of gas feed ports in a vertical arrangement, and the plurality of sub-channels partially define an interior of the gas channel insert to subdivide the gas flow received by the inlet into a plurality of outlet sub-channels.

[0007] Another aspect of the present disclosure relates to a plasma processing apparatus, comprising: a processing chamber having one or more sidewalls and a dome, wherein the dome includes a plurality of gas feed ports; a workpiece support disposed in the processing chamber, the workpiece support being configured to support a workpiece during processing; an induction coil assembly for inducing plasma in the processing chamber; a Faraday shield disposed between the induction coil assembly and the processing chamber; and a gas channel insert comprising: an inlet for receiving a gas flow; a plurality of sub-channels for distributing a gas flow from the inlet to a plurality of gas feed ports in the dome, wherein the plurality of sub-channels are positioned between the inlet and the plurality of gas feed ports in a vertical arrangement, and the plurality of sub-channels partially define an interior of the gas channel insert to subdivide the gas flow received by the inlet into a plurality of outlet sub-channels.

[0008] These and other features, aspects and advantages of various embodiments will be better understood with reference to the following description and appended claims.The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the relevant principles. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] A detailed discussion of the embodiments for those skilled in the art is set forth in the specification with reference to the accompanying drawings, in which:

[0010] Figure 1 An exemplary workpiece processing apparatus according to an exemplary embodiment of the present disclosure is depicted.

[0011] Figure 2 An exemplary gas injection assembly for a workpiece processing apparatus is depicted according to an exemplary embodiment of the present disclosure.

[0012] Figure 3 Depicted is an example bottom view of a dome of a gas injection assembly for a workpiece processing apparatus according to an exemplary embodiment of the present disclosure.

[0013] Figure 4 Depicted is an example top view of a gas passage insert for a workpiece processing device according to an exemplary embodiment of the present disclosure.

[0014] Figure 5 Depicted is an example cross-sectional view of a gas passage insert for a workpiece processing device according to an exemplary embodiment of the present disclosure.

[0015] Figure 6 A flow chart of a method for distributing airflow according to an exemplary embodiment of the present disclosure is depicted.

[0016] Figure 7 Depicted is an example comparison of etch rates during workpiece processing according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0017] For purposes of illustration and discussion, aspects of the present disclosure are discussed with reference to a "workpiece," "wafer," or semiconductor wafer. One of ordinary skill in the art, using the disclosure provided herein, will understand that the exemplary aspects of the present disclosure can be used in association with any semiconductor workpiece or other suitable workpiece. In addition, the term "about" used in conjunction with a numerical value will be intended to refer to within ten percent (10%) of the stated value. "Pedestal" refers to any structure that can be used to support a workpiece. "Remote plasma" refers to a plasma generated away from a workpiece, such as a plasma generated in a plasma chamber separated from the workpiece by a barrier. "Direct plasma" refers to a plasma directly exposed to a workpiece, such as a plasma generated in a processing chamber having a pedestal operable to support a workpiece.

[0018] As used herein, the term "about" used in conjunction with a specified numerical value may include a range of values ​​within 10% of the numerical value. In addition, the term "substantially" may be used herein. For example, in an embodiment, the phrase "substantially parallel" is used with respect to the parallel relationship between the upper subchannel and the outlet subchannel. In such an embodiment, substantially parallel means at least within 15 degrees of parallel, such as within 10 degrees of parallel, such as within 1.0 degrees of parallel.

[0019] A workpiece processing device may generally include a processing chamber for performing various processing processes on one or more workpieces. Such a chamber may include a plasma generating source (e.g., an induction coil) for implementing a plasma process or a heating source (e.g., a lamp array) for performing a thermal treatment. In addition, such a chamber may generally include side walls and a top (e.g., a lid) to define a processing area disposed above the workpiece. In addition, the chamber may be configured to inject process gases into the processing chamber generally through the side walls and / or the lid during the processing process. Therefore, a gas distribution mechanism may be provided around the inner wall of the chamber or in the lid as an annular insert. However, such a gas distribution mechanism often has many disadvantages, one of which is the lack of control over the pressure of the gas distributed from one or more holes of the mechanism. In addition, in a processing device that requires the use of one or two holes to deliver gas to the processing area, it may be difficult to provide azimuthal uniformity in the processing process.

[0020] Exemplary aspects of the present disclosure relate to a gas injection assembly for injecting a gas into a processing chamber of a workpiece processing apparatus. The processing apparatus may include a processing chamber having one or more sidewalls and a dome (e.g., a dielectric top, a dielectric dome). The apparatus includes: a workpiece support disposed in the processing chamber and configured to support the workpiece during processing; and an induction coil assembly for inducing a plasma in the processing chamber. A Faraday shield is disposed between the induction coil assembly and the processing chamber. The apparatus also includes a gas injection assembly configured to inject the gas into the processing chamber in a manner that improves uniform distribution across the workpiece and / or improves uniform distribution within the chamber.

[0021] Advantageously, a gas injection assembly according to exemplary aspects of the present disclosure can inject gas in a manner that improves pressure uniformity and / or conductance uniformity. For example, in some embodiments, a gas injection assembly can include a gas channel insert having one or more sub-channels for subdividing an input stream (e.g., a gas flow) into one or more output streams while promoting equalization (e.g., pressure and / or flow equalization) of the one or more output streams. In this manner, the output streams can improve the uniformity of process gas distribution and the application of a treatment process applied to a workpiece. For example, in some embodiments, a gas injection assembly can promote substantially equal gas conductance for all output streams entering a processing chamber. The speed at which the workpiece is processed becomes more uniform, thereby reducing anomalies and other defects associated with the workpiece.

[0022] In some embodiments, the gas channel of the processing device includes a gas inlet. In some embodiments, the gas channel may include two inlets, which are configured to receive gas flows from dual feed gas pipelines. A gas channel insert according to an exemplary aspect of the present disclosure may be inserted into a gas channel defined in a cover of a processing device to redirect the flow from one inlet to multiple gas feed ports. For example, the gas channel insert may provide at least two, four, or eight times the number of gas feed ports compared to the number of inlets. In some embodiments, the gas channel may include one or two inlets, and the gas channel insert provided therein may provide up to sixteen gas feed ports, or up to thirty-two gas feed ports, or up to sixty-four gas feed ports, or more.

[0023] Exemplary aspects of the present disclosure relate to a gas injection assembly for injecting gas into a processing chamber. The gas injection assembly includes a plurality of gas feed ports for distributing a gas flow received through an inlet of the gas injection assembly. In addition, a plurality of vertically arranged subchannels can subdivide the gas flow as it flows from an upper subchannel to a plurality of outlet subchannels. In some embodiments, each of the plurality of outlet subchannels is disposed proximate to at least one of the plurality of gas feed ports for distributing the gas flow into an interior space of the processing chamber.

[0024] Exemplary aspects of the present disclosure can provide many technical effects and benefits. For example, the gas channel insert includes one or more gas flow branches to evenly distribute the gas flow when the gas flow flows from a single inlet to multiple gas feed ports. In such a configuration, multiple gas feed ports can be formed in an annular shape around the lid of the processing chamber so that the gas flow is injected into the processing chamber in a manner with improved azimuthal uniformity. In addition, due to the subdivided characteristics of one or more gas flow branches, the gas feed ports can inject the gas flow into the processing chamber in a manner that improves pressure uniformity and / or conduction uniformity. In the absence of gas flow branches, the gas pressure will be different for an outlet farther from the inlet than for an outlet located near the inlet.

[0025] Reference will now be made in detail to the embodiments, one or more examples of which are shown in the accompanying drawings. Each example is provided to explain the embodiments and is not intended to be a limitation of the invention. In fact, it will be apparent to those skilled in the art that various modifications and variations may be made to the embodiments without departing from the scope or spirit of the present disclosure. For example, a feature shown or described as part of one embodiment may be used together with another embodiment to produce yet another embodiment. Therefore, aspects of the present disclosure are intended to encompass such modifications and variations.

[0026] Figure 1 A processing device 100 is depicted according to an exemplary embodiment of the present disclosure. For purposes of illustration and discussion, reference is made to Figure 1 Various aspects of the present disclosure are discussed with reference to the processing apparatus 100 depicted in the accompanying drawings. A person of ordinary skill in the art using the disclosure provided herein will understand that the exemplary aspects of the present disclosure can be used with other processing tools and / or apparatuses, such as plasma stripping tools, thermal processing tools, etc., without departing from the scope of the present disclosure. It should be understood that the substrate can include, for example, a glass sheet, a film, a tape, a solar panel, a mirror, a liquid crystal display, a semiconductor wafer, etc. In addition, it should be understood that different types of processing chambers can be used, for example, for processing semiconductor wafers during the manufacture of integrated circuit chips. The processing chamber can be used to anneal the wafer, perform chemical vapor deposition, plasma enhanced chemical vapor deposition, etching processes, and other deposition processes. A person of ordinary skill in the art using the disclosure provided herein will understand that the exemplary aspects of the present disclosure can be used with other processing chambers that are not explicitly discussed with reference to the drawings in the present disclosure.

[0027] like Figure 1As shown, the processing device 100 includes a processing chamber 109 defining an interior space 102. A workpiece support 104 (e.g., a susceptor) is used to support a workpiece 106, such as a semiconductor wafer, within the interior space 102. The workpiece support 104 may include one or more support pins, such as at least three support pins (not shown), extending from the workpiece support 104. In some embodiments, the workpiece support 104 may include an electrostatic chuck. In some embodiments, the workpiece support 104 may be spaced apart from the top of the processing chamber 109, such as spaced apart from a dome 112 (e.g., a dielectric top, a dielectric dome). The dome 112 is located above the workpiece support 104. The processing chamber 109 includes one or more sidewalls 111 and a dome 112. The dome 112 may include a relatively flat central portion 113 and an angled peripheral portion 114. Although such embodiments of the dome 112 are disclosed, the dome 112 may be any suitable shape. For example, in some embodiments, the dome 112 can be formed by a relatively flat portion without an angled peripheral portion. In some other embodiments, the dome 112 can be in the shape of a sphere. Any suitable dome shape can be used in accordance with the disclosure provided. The dome 112 includes a space in the central portion 113 for the showerhead 120 to supply process gas into the interior space 102. In addition, the gas feed port 180 can extend through the dome 112 to allow gas flow from the gas channel 156 to the interior space 102 of the processing chamber 109.

[0028] like Figure 1 As shown, according to exemplary aspects of the present disclosure, the processing device 100 may include a gas delivery system 155, which is configured to deliver process gases to the processing chamber 109, for example, via a gas channel 156 defined between the dome 112 and the metal shield 152 and / or a single body 150 formed by the metal shield 152 and the Faraday shield 154. The gas delivery system 155 may include one or more feed gas pipelines 159. The feed gas pipeline 159 may deliver a desired amount of gas to the processing chamber 109 as a process gas. The gas delivery system 155 may be used to deliver any suitable process gas. Exemplary process gases include, for example, oxygen-containing gases (e.g., O 2 , O 3 、N 2 O, H 2 O), hydrogen-containing gases (such as H 2 , D 2 ), nitrogen-containing gases (such as N 2 NH 3 、N 2 O), fluorine-containing gases (such as CF 4 , C 2 F 4 , CHF 3 , CH2 F 2 , CH 3 F. SF 6 NF 3 ), hydrocarbon-containing gases (such as CH 4 ) or a combination thereof. Additional feed gas lines containing other gases may be added as needed. For example, dual feed lines may be used to deliver gases to the gas channel at more than one inlet location. In some embodiments, the process gas may be mixed with what may be referred to as a "carrier" gas (such as He, Ar, Ne, Xe, or N 2 ) is mixed with an inert gas. The control valve 158 can be used to control the flow rate of each feed gas pipeline to flow the process gas into the processing chamber 109. In an embodiment, the gas delivery system 155 can be controlled by a gas flow controller.

[0029] In an embodiment, the processing apparatus 100 may include a controller 175. The controller 175 controls various components in the processing chamber 109 during the processing process. For example, the controller 175 may implement one or more process parameters, such as controlling a gas flow controller 185, and changing conditions in the processing chamber 109, such as controlling gas pressure, in order to maintain suitable conditions in the processing chamber 109 while processing the workpiece 106. The controller 175 may include, for example, one or more processors and one or more memories. The one or more memories may store computer-readable instructions that, when implemented by the one or more processors, cause the one or more processors to perform operations, such as any of the control operations described in this specification.

[0030] According to exemplary aspects of the present disclosure, the processing device 100 includes a Faraday shield 154 disposed between the primary induction coil 130 and the processing chamber 109. For example, in certain embodiments, the processing device 100 includes a Faraday shield 154 disposed between the primary induction coil 130 and the dome 112. The Faraday shield 154 may be a slotted metal shield that reduces capacitive coupling between the induction coil 130 and / or the secondary induction coil 140 and the interior space 102 of the processing chamber. As shown, the Faraday shield 154 may be mounted above an angled portion of the dome 112. Portions of the multi-turn coil of the first induction coil 130 may be located near the Faraday shield 154. In addition, the optional secondary induction coil 140 may be included as part of an induction coil assembly for generating an induction plasma in the interior space 102, as will be described in more detail below.

[0031] The processing device 100 may include an induction coil assembly including one or more induction coils for generating an induction plasma in the interior space 102 of the processing chamber. The induction coil may include a primary induction coil 130, which, when provided with RF power, induces plasma in the process gas in the interior space 102 of the processing device 100. For example, the RF generator 160 may be configured to provide electromagnetic energy to the induction coil 130 through a matching network 162. In addition, the first induction coil 130 may be coupled to ground via a capacitor 164. Although only one induction coil 130 is shown, the present disclosure is not limited thereto. In fact, any number of induction coils may be used with the processing device 100 provided in this specification. For example, the processing device 100 may include at least two induction coils or at least three induction coils. Additional induction coils may be coupled to an RF power source similar to the induction coil 130, such as a secondary induction coil 140.

[0032] The optional secondary induction coil 140 can be used for calibration and support functions and for improving the stability of the plasma during steady-state operation. Because the secondary induction coil 140 can be used primarily for calibration and support functions and for improving the stability of the plasma during steady-state operation, the secondary induction coil 140 does not have to be coupled to an RF generator as powerful as the first induction coil 130 and can be designed differently and cost-effectively to overcome the difficulties associated with previous designs. As discussed in detail below, the secondary induction coil 140 can also be operated at a lower frequency, such as approximately 2 MHz, thereby allowing the secondary induction coil 140 to be very compact and mounted in the limited space on top of the dielectric window.

[0033] The primary induction coil 130 and the secondary induction coil 140 may be operated at different frequencies. The frequencies may be sufficiently different to reduce crosstalk in the plasma between the primary induction coil 130 and the secondary induction coil 140. For example, the frequency applied to the primary induction coil 130 may be at least about 1.5 times the frequency applied to the secondary induction coil 140. In some embodiments, the frequency applied to the primary induction coil 130 may be about 13.56 MHz, and the frequency applied to the secondary induction coil 140 may be in the range of about 1.75 MHz to about 2.15 MHz. Other suitable frequencies may also be used, such as about 400 kHz, about 4 MHz, and about 27 MHz. Although the present disclosure is discussed with reference to the primary induction coil 130 operating at a higher frequency relative to the secondary induction coil 140, a person of ordinary skill in the art using the disclosure provided by the present disclosure should understand that the secondary induction coil 140 may be operated at a higher frequency without departing from the scope of the present disclosure.

[0034] The optional secondary induction coil 140 may include a planar coil 142 and a flux concentrator 144. The flux concentrator 144 may be made of a ferrite material. Using a flux concentrator with an appropriate coil may give the secondary induction coil 140 high plasma coupling and good energy transfer efficiency, and may significantly reduce its coupling to the metal shield 152. Using a lower frequency (such as about 2 MHz) on the secondary induction coil 140 may increase the surface layer, which also improves the plasma heating efficiency.

[0035] According to aspects of the present disclosure, different induction coils 130 and 140 can carry different functions. Specifically, the primary induction coil 130 can be used to achieve the basic function of plasma generation during ignition and provide sufficient startup for the secondary induction coil 140. The primary induction coil 130 can be coupled to both the plasma and the ground shield to stabilize the plasma potential. The Faraday shield 154 associated with the first induction coil 130 avoids window sputtering and can be used to provide coupling to ground.

[0036] The arrangement of the primary induction coil 130 and the secondary induction coil 140 on opposite sides of the metal shield 152 allows the primary induction coil 130 and the secondary induction coil 140 to have different structural configurations and perform different functions. For example, the primary induction coil 130 may include a multi-turn coil located near a peripheral portion of the processing chamber. The primary induction coil 130 may be used for basic plasma generation and reliable startup during the inherent transient ignition phase. The primary induction coil 130 may be coupled to an RF generator and an automatically tuned matching network and may be operated at an increased RF frequency, such as at approximately 13.56 MHz.

[0037] Although the present disclosure refers to the primary inductive coil 130 and the secondary inductive coil 140, it will be understood by those skilled in the art that the terms primary and secondary are for convenience only. The secondary inductive coil 140 may operate independently of the primary inductive coil 130. In addition, in some embodiments, the processing device may have only a single inductive coupling coil.

[0038] According to aspects of the present disclosure, the processing device 100 may include a metal shield 152 disposed around the secondary inductive coil 140. The metal shield 152 separates the primary inductive coil 130 and the secondary inductive coil 140 to reduce crosstalk between the inductive coil 130 and the inductive coil 140. The processing device 100 may further include a Faraday shield 154 disposed between the primary inductive coil 130 and the dome 112. The Faraday shield 154 may be a slotted metal shield that reduces capacitive coupling between the primary inductive coil 130 and the processing chamber 109. As shown, the Faraday shield 154 may be mounted over an angled portion of the dielectric shield 110.

[0039] Figure 2 An exemplary gas injection assembly 200 for a workpiece processing device according to an exemplary embodiment of the present disclosure is depicted. The gas injection assembly 200 includes a gas channel 256 and a first inlet 261 for receiving a gas flow from a first feed gas pipeline. In some embodiments, the gas channel 256 may include a second inlet for receiving a gas flow from a second feed gas pipeline. The second inlet and the first inlet may be located on opposite sides of the gas channel 256.

[0040] like Figure 4 As shown, for example, an exemplary top view of a gas channel insert 400 depicts a first inlet 461 for receiving a gas flow from a first feed gas line and a second inlet 462 for receiving the same or a different gas flow from a second feed gas line. In some embodiments, the first inlet 461 and the second inlet 462 are configured to deliver the gas flow to the upper subchannel of the gas channel insert 400.

[0041] return Figure 2 , the gas injection assembly 200 is defined by a metal shield 252 and a Faraday shield 254 portion of the processing chamber that can form a single body 250. In some embodiments, a gas channel 256 is formed by a portion of the metal shield 252 and / or a portion of the single body 250 including the Faraday shield 254. In addition, a gas channel insert 210 including a plurality of sub-channels can be positioned in the gas channel 256 to deliver a gas flow into the processing chamber. In this manner, the Faraday shield 254 can define a first portion of the gas injection assembly such that the first portion includes a plurality of sub-channels. The bottom of the gas channel insert 210 is disposed adjacent to a dielectric window or dome, such as at Figure 1 1, which separates the gas channel 256 and / or the gas channel insert 210 from the processing chamber. As will be described in further detail below, a dome (e.g., a dielectric dome) can define a second portion of the gas injection assembly that includes a plurality of gas feed ports for distributing gas flow to the processing chamber.

[0042] Figure 3 An exemplary bottom view of a dome 312 of a gas injection assembly 300 for a workpiece processing device according to an exemplary embodiment of the present disclosure is depicted. The gas injection assembly 300 includes a gas channel insert (not shown) and a dome 312 having a central portion 313 and an angled peripheral portion 314. The central portion 313 includes a central hole 322 and a plurality of gas feed ports 380.

[0043] For example, the central hole 322 can extend through the central portion 313 of the dome 312 to allow the process gas to flow from the showerhead to the interior space of the processing chamber. In addition, a plurality of gas feed ports 380 can extend at least partially through the central portion 313 of the dome 312. For example, a first portion of the gas injection assembly 300 (e.g., a gas channel insert) can be disposed in the gas channel. A second portion of the gas injection assembly (e.g., a plurality of gas feed ports 380) can extend between the first portion of the gas injection assembly 300 and the interior space of the processing chamber. In particular, the plurality of gas feed ports 380 extend through the dome 312 in a vertical direction. In some embodiments, the plurality of gas feed ports 380 are formed at a position radially distal to the central hole 322. In addition, the plurality of gas feed ports 380 are configured to distribute a gas flow from one or more inserts of the gas injection assembly 300 into the interior space of the processing chamber. For example, the gas injection assembly 300 may include 8, 16, 32, or 64 or more gas feed ports extending from a first portion of the gas injection assembly (e.g., a gas channel insert) through the dome 312 to the interior space of the processing chamber. In addition, the plurality of gas feed ports 380 are configured to distribute a gas flow from one or more inlets of the gas channel insert to a workpiece disposed in the interior space of the processing chamber. In this manner, the azimuthal uniformity of a process applied to the workpiece may be increased.

[0044] According to aspects of the present disclosure, the plurality of gas feed ports 380 may include a first subset 381 of gas feed ports and a second subset 382 of gas feed ports. Each gas feed port of the plurality of gas feed ports 380 may be formed annularly around the outer edge of the central portion 313 of the dome 312. The first subset 381 of gas feed ports may correspond to a first gas flow branch of the gas channel insert, and the second subset 382 of gas feed ports may correspond to a second gas flow branch of the gas channel insert.

[0045] Figure 5An exemplary cross-sectional view of a gas channel insert 500 for a workpiece processing device according to an exemplary embodiment of the present disclosure is depicted. The gas channel insert 500 may include an inlet 502 (such as a first inlet) to receive a gas flow from a first feed gas pipeline, which may be routed to the inlet 502. In addition, the gas channel insert 500 may include another inlet, such as a second inlet, for receiving gas from a second feed gas pipeline. The gas channel insert 500 also includes a plurality of sub-channels for distributing the gas flow from the inlet 502 to a plurality of gas feed ports 580 included in a dome 590 (e.g., a dielectric top, a dielectric dome). The gas channel insert 500 and the dome 590 may define a gas injection assembly. In some embodiments, the plurality of sub-channels may be positioned between the inlet 502 and the plurality of gas feed ports 580 in a vertical arrangement. The plurality of subchannels may partially define the interior of the gas channel insert 500 to subdivide the gas flow received by the inlet 502 in a plurality of outlet subchannels, such as the first outlet subchannel 550 and the second outlet subchannel 560. For example, the plurality of subchannels of the gas channel insert may be configured to operate as a series of baffles in the gas flow.

[0046] According to aspects of the present disclosure, the plurality of sub-channels may include an upper sub-channel, a middle sub-channel, and an outlet sub-channel. Figure 5 As shown, for example, the upper subchannel 510 is arranged near the inlet 502 so that the airflow received at the inlet 502 can pass through the upper subchannel 510. The plurality of subchannels further include a plurality of intermediate subchannels vertically arranged between the upper subchannel 510 and the plurality of outlet subchannels. For example, the intermediate subchannel includes a first primary intermediate subchannel 514 of the first airflow branch and a second primary intermediate subchannel 524 of the second airflow branch. The first primary intermediate subchannel 514 is vertically arranged between the upper subchannel 510 and the first outlet subchannel 550. Similarly, the second primary intermediate subchannel 524 is vertically arranged between the upper subchannel 510 and the second outlet subchannel 560. Therefore, the upper subchannel 510 subdivides the airflow passing through the first primary intermediate subchannel 514 and the second primary intermediate subchannel 524, respectively, to form a first airflow branch and a second airflow branch.

[0047] In addition, the intermediate subchannel may include a plurality of secondary intermediate subchannels. The secondary intermediate subchannel may include a first secondary intermediate subchannel 532 and a second secondary intermediate subchannel 534 associated with the first airflow branch. In addition, the secondary intermediate subchannel may include a third secondary intermediate subchannel 542 and a fourth secondary intermediate subchannel 544 associated with the second airflow branch. Figure 5As shown, each secondary intermediate subchannel can subdivide the airflow into outlet subchannels. For example, the second secondary intermediate subchannel 534 can subdivide the first portion of the airflow into two outlet subchannels, including the first outlet subchannel 550. Similarly, the third secondary intermediate subchannel 542 can subdivide the second portion of the airflow into two outlet subchannels, including the second outlet subchannel 560. The plurality of subchannels are configured to allow airflow to pass through a set of orifices, as will be discussed in further detail below.

[0048] According to aspects of the present disclosure, the gas channel insert 500 includes a set of orifices for subdividing the gas flow into a first gas flow branch (eg, a first branch) and a second gas flow branch (eg, a second branch). Figure 5 As shown, the first subgroup of the group of orifices includes the primary orifice, secondary orifice and tertiary orifice of the first branch. About the second branch, the second subgroup of the group of orifices also includes the primary orifice, secondary orifice and tertiary orifice. In particular, the first part of the airflow can pass through the first primary orifice 512 to form a first airflow branch. In addition, the second part of the airflow can pass through the second primary orifice 522 to form a second airflow branch. In this way, when the airflow flows from the upper subchannel 510 to multiple outlet subchannels (e.g., the first outlet subchannel 550 and the second outlet subchannel 560), the secondary orifice and the tertiary orifice can further subdivide the airflow.

[0049] like Figure 5 As shown, for example, the first part of the airflow can flow from the upper subchannel 510 to the first primary intermediate subchannel 514 through the first primary orifice 512 disposed therein. When the first part of the airflow passes through the two secondary orifices 516, 517 disposed between the first primary intermediate subchannel 514 and the secondary intermediate subchannels 532, 534 of the first branch, it can be further subdivided. For example, the first part of the airflow can flow from the first primary intermediate subchannel 514 to the first secondary intermediate subchannel 532 through the first secondary orifice 517. In addition, the first part of the airflow can flow from the first primary intermediate subchannel 514 to the second secondary intermediate subchannel 534 through the second secondary orifice 516. Subsequently, the first secondary intermediate subchannel 532 and the second secondary intermediate subchannel 534 subdivide the first part of the airflow in multiple outlet subchannels through the three-stage outlet of the first branch. Similarly, the third secondary intermediate subchannel and the fourth secondary intermediate subchannel receive the airflow through the third secondary orifice 526 and the fourth secondary orifice 527.

[0050] like Figure 5As shown, the first part of the airflow can flow from the secondary intermediate subchannel to multiple outlet subchannels, such as the first outlet subchannel 550. In particular, the first tertiary orifice 535 and the second tertiary orifice 536 promote the airflow from the first secondary intermediate subchannel. Similarly, the third tertiary orifice 537 and the fourth tertiary orifice 538 promote the airflow from the second secondary intermediate subchannel 534. For example, the third tertiary orifice promotes the airflow from the second secondary intermediate subchannel 534 to the first outlet subchannel 550. In addition, the tertiary orifices (e.g., tertiary orifices 345, 346, 347) associated with the second airflow branch are configured to promote the airflow from the third secondary intermediate subchannel 542 and the fourth secondary intermediate subchannel 544 to multiple outlet subchannels. For example, the fifth tertiary orifice 545 is configured to promote the airflow from the third secondary intermediate subchannel 542 to the second outlet subchannel 560.

[0051] According to aspects of the present disclosure, a plurality of outlet subchannels are configured to subdivide the gas flow in two gas feed ports of a plurality of gas feed ports 580. The plurality of gas feed ports may include a first subset 581 of gas feed ports and a second subset 582 of gas feed ports, both of which extend through the dome 590 (e.g., dielectric top, dielectric dome). For example, a first gas flow branch includes a first outlet subchannel 550, which is configured to subdivide the gas flow to two gas feed ports of a first subset 581 of gas feed ports. Similarly, a second gas flow branch includes a second outlet subchannel 560, which is configured to subdivide the gas flow to two gas feed ports of a second subset 582 of gas feed ports. In some embodiments, the first subset of gas feed ports may include eight, sixteen, or thirty-two gas feed ports, and the second subset of gas feed ports may include eight, sixteen, or thirty-two gas feed ports. In this way, a plurality of gas feed ports may include a total of sixteen, thirty-two, or sixty-four gas feed ports. The bifurcation of the gas flow helps to evenly distribute the gas flow and allows each of the plurality of gas feed ports 580 to provide a gas flow with improved pressure and / or conductance uniformity.

[0052] like Figure 5As shown, multiple outlet sub-channels are provided near multiple gas feed ports 580. In some embodiments, the first portion of the gas flow passes through the first primary orifice 512 and is subdivided through the intermediate sub-channels associated with the first gas flow branch until it is distributed through the first subset 581 of the gas feed ports. The first subset 581 of the gas feed ports delivers the first portion of the gas flow to the interior space of the processing chamber and / or to the workpiece disposed inside the processing chamber. Therefore, the first gas flow branch promotes uniform pressure in the first portion of the gas flow distributed from the first subset 581 of the gas feed ports. Similarly, the second portion of the gas flow passes through the second primary orifice 522 and is subdivided through the intermediate channels associated with the second gas flow branch until it is distributed through the second subset 582 of the gas feed ports. The second subset 582 of the gas feed ports delivers the second portion of the gas flow to the interior space of the processing chamber and / or to the workpiece disposed inside the processing chamber. Therefore, the second gas flow branch promotes uniform pressure in the second portion of the gas flow distributed from the second subset 582 of the gas feed ports. The gas flow may be subdivided two, four, six or more times, depending on the number of intermediate sub-channels included in the gas channel insert 500 .

[0053] According to aspects of the present disclosure, a plurality of gas feed ports 580 may extend vertically between the plurality of sub-channels and the interior space of the processing chamber. Figure 5 For example, the first subset 581 of gas feed ports extends vertically between the first outlet subchannel 550 and the interior space of the processing chamber. Thus, the first subset 581 of gas feed ports can extend in a vertical direction substantially perpendicular to the plurality of subchannels. In this manner, the plurality of gas feed ports 580 can inject gas flow into the processing chamber in a downward, vertical direction.

[0054] Figure 6 A flow chart of a method (600) for distributing airflow according to an exemplary embodiment of the present disclosure is depicted. By way of example, reference will be made to Figure 1 The method (600) is discussed with reference to the processing apparatus 100 of FIG. 6. The method (600) may be implemented in any suitable processing apparatus, such as a plasma processing apparatus. Figure 5 The steps are depicted as being performed in a particular order for the purposes of illustration and discussion. One of ordinary skill in the art will appreciate, using the disclosure provided by this specification, that the various steps of any method described in this specification may be omitted, expanded, performed simultaneously, rearranged, and / or modified in various ways without departing from the scope of the present invention. In addition, various steps (not shown) may be performed without departing from the scope of the present disclosure.

[0055] At (602), the method may include placing a workpiece 106 in a processing chamber 109 of a processing apparatus 100. For example, the workpiece 106 may be placed on a workpiece support 104 disposed in the processing chamber 109.

[0056] At (604), the method may include exposing the workpiece 106 to a treatment process. As discussed, the present disclosure may be used with different types of workpiece processing apparatuses, such as plasma processing apparatuses, plasma stripping tools, thermal processing tools, and the like. Furthermore, the processing chamber may be used to apply a variety of treatment processes, such as chemical vapor deposition, plasma enhanced chemical vapor deposition, other deposition processes, etching processes, and thermal processing processes. However, during the application of the treatment process, anomalies may occur in the workpiece due to uneven application of the treatment process to the workpiece.

[0057] At (606), the method may include delivering a gas flow into the interior space of the processing chamber. As previously described, a gas channel insert may be provided in the gas channel 156 to facilitate distribution of the gas flow into the processing chamber 109. For example, a feed gas line 159 may deliver a gas flow through an inlet of the gas channel insert. The gas channel insert may include a plurality of sub-channels for distributing a gas flow from the insert to a plurality of gas feed ports 180. The gas channel insert may be configured to improve process uniformity and azimuthal uniformity associated with a process applied to a workpiece.

[0058] At (608), the method may include adjusting the gas flow during the treatment process. For example, the processing device 100 may include a controller 175 for adjusting various components in the processing chamber 109 during the treatment process. In addition, the controller 175 may implement one or more process parameters (such as controlling the gas flow controller 185) and change the conditions of the processing chamber 109 (such as increasing the gas pressure) to maintain suitable conditions in the processing chamber 109 while processing the workpiece 106. The controller 175 may include, for example, one or more processors and one or more memories for storing computer-readable instructions that, when executed by the one or more processors, cause the one or more processors to perform operations.

[0059] At (610), the method may include removing the workpiece from the processing chamber 109. For example, the workpiece 106 may be removed from the workpiece support 104 in the processing chamber 109. The conditions of the processing apparatus 100 may then be adjusted in preparation for future processing of other workpieces.

[0060] Figure 7An exemplary comparison of etch rates during a workpiece handling process according to an exemplary embodiment of the present disclosure is depicted. In this example, the test process used a pressure of 10-20 mTorr and a gas flow rate of 90-500 standard cubic centimeters per minute. The power varied between 100W and 1500W. Tests were performed using a workpiece handling apparatus that did not include a gas channel insert and included a gas channel insert. Therefore, the etch rates associated with the workpiece were compared based on whether the gas channel insert was included. It can be seen that the test example using the gas channel insert provided improved etch rate uniformity compared to the baseline. The baseline included a single gas channel supplied by two inlets and output directly to the processing chamber.

[0061] Although the subject matter has been described in detail with respect to specific exemplary embodiments of the subject matter, it should be understood that those skilled in the art can easily generate changes, variations, and equivalents of such embodiments after obtaining an understanding of the foregoing. Therefore, the scope of the present disclosure is by way of example rather than by way of limitation, and the subject disclosure does not exclude such modifications, variations, and / or additions to the subject matter, which are apparent to those of ordinary skill in the art.

Claims

1. A gas injection assembly for injecting gas into a processing chamber, the gas injection assembly include: a dome, wherein the dome comprises a plurality of gas feed ports; and A gas passage insert, wherein the gas passage insert comprises: an inlet for receiving an air flow; a plurality of subchannels for distributing a gas flow from the inlet to the plurality of gas feed ports in the dome, wherein the plurality of subchannels are positioned in a vertical arrangement between the inlet and the plurality of gas feed ports, the plurality of subchannels partially defining an interior of the gas channel insert to subdivide a gas flow received by the inlet in a plurality of outlet subchannels.

2. The gas injection assembly according to claim 1, in, The plurality of sub-channels further include an upper sub-channel disposed adjacent to the inlet and receiving the airflow from the inlet.

3. The gas injection assembly according to claim 2, in, The multiple sub-channels also include multiple intermediate sub-channels, which are vertically arranged between the upper sub-channel and the multiple outlet sub-channels, and the multiple intermediate sub-channels include a first primary intermediate sub-channel for a first airflow branch and a second primary intermediate sub-channel for a second airflow branch, so that the upper sub-channel separates the airflow passing through the first primary intermediate sub-channel and the second primary intermediate sub-channel.

4. The gas injection assembly according to claim 1, in, The gas channel insert further comprises a set of apertures for subdividing the gas flow into a first flow branch and a second gas flow branch.

5. The gas injection assembly according to claim 4, in, A first subset of the set of orifices includes primary, secondary and tertiary orifices of the first branch, and a second subset of the set of orifices includes primary, secondary and tertiary orifices of the second branch.

6. The gas injection assembly according to claim 1, in, The plurality of sub-channels are configured to subdivide the gas flow in two of the plurality of gas feed ports, wherein the plurality of gas feed ports include a first subset of gas feed ports and a second subset of gas feed ports, both of which extend through the dome.

7. The gas injection assembly according to claim 6, in, The first subset of gas feed ports is configured to distribute a first portion of a gas flow into the processing chamber in a vertical direction; and The second subset of gas feed ports is configured to distribute a second portion of the gas flow into the processing chamber in a vertical direction.

8. The gas injection assembly according to claim 1, in, The plurality of sub-channels are disposed adjacent to the plurality of gas feed ports.

9. The gas injection assembly according to claim 8, in, The plurality of sub-channels include: a first outlet subchannel for receiving a first gas flow branch and subdividing the first gas flow branch into a first subset of gas feed inlets of the plurality of gas feed inlets; and The second outlet subchannel is used to receive the second gas flow branch and subdivide the second gas flow branch into a second subset of the gas feed inlets of the plurality of gas feed inlets.

10. The gas injection assembly according to claim 1, in, The plurality of gas feed ports extend vertically between the plurality of sub-channels and an interior space of the processing chamber.

11. The gas injection assembly according to claim 1, in, The gas channel insert also includes a second inlet for receiving gas from a second feed gas line.

12. The gas injection assembly according to claim 1, in, The plurality of sub-channels are configured to operate as a series of baffles in the air flow.

13. The gas injection assembly according to claim 1, in, The plurality of gas feed ports include at least sixteen gas feed ports for distributing a gas flow received from the inlet into the processing chamber.

14. The gas injection assembly according to claim 1, in, The plurality of gas feed ports include at least thirty-two gas feed ports for distributing a gas flow received from the inlet into the processing chamber.

15. A plasma processing device, include: a processing chamber having one or more sidewalls and a dome, wherein the dome includes a plurality of gas feed ports; a workpiece support disposed in the processing chamber, the workpiece support configured to support a workpiece during processing; an induction coil assembly for inducing plasma in the processing chamber; a Faraday shield disposed between the induction coil assembly and the processing chamber; and Gas channel insert, comprising: an inlet for receiving an air flow; a plurality of subchannels for distributing a gas flow from the inlet to the plurality of gas feed ports in the dome, wherein the plurality of subchannels are positioned in a vertical arrangement between the inlet and the plurality of gas feed ports, the plurality of subchannels partially defining an interior of the gas channel insert to subdivide a gas flow received by the inlet in a plurality of outlet subchannels.

16. The plasma processing apparatus according to claim 15, in, The gas passage insert is disposed in a gas passage defined between the dome and the Faraday shield; and The plurality of gas feed ports extend through the dome.

17. The plasma processing apparatus of claim 15, comprising a dual feed gas line configured to deliver gas to the inlet of the gas channel insert.

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