Semiconductor processing device and method

Abstract

The invention discloses a semiconductor processing device and method. The semiconductor processing apparatus includes a first chamber portion and a second chamber portion. The first cavity part is provided with a first groove channel, and the second cavity part is provided with a second groove channel. When the second cavity part is located at the closing position relative to the first cavity part and a wafer is contained between the second cavity part and the first cavity part, the first groove channel and the second groove channel are communicated and jointly form an edge channel, and the edge of the wafer extends into the edge channel. The second cavity part or the first cavity part is provided with a first through hole, a second through hole, a third through hole and an isolation bulge, the first through hole, the second through hole and the third through hole are used for communicating the edge channel with the outside, the isolation bulge is positioned between the first through hole and the second through hole, and an extracting solution entering the edge channel through the first through hole flows to the third through hole from the first through hole and flows out from the third through hole; the extracting solution entering the edge channel through the second through hole flows to the third through hole from the second through hole and flows out of the third through hole. In this way, pollution extraction of the edge of the wafer can be achieved.

Description

[Technical field]

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor processing system and a semiconductor processing method thereof. [Background technology]

[0002] As the size of semiconductors continues to decrease, impurities contained in the wafer silicon material itself become a requirement that needs to be detected and monitored in quality control. However, current wafer contamination detection technology is limited to extracting and detecting impurity contamination on the wafer surface or performing destructive testing on the entire wafer material.

[0003] Chinese patent application No. 201510836143.0 discloses a method for extracting and detecting wafer contamination using a closed channel in a microchamber. The closed channel can only extract and detect surface contamination and bulk metal contamination of the wafer. However, in some applications, it is necessary to extract and detect contamination on the edge of the wafer separately. None of the above existing solutions can meet this demand.

[0004] Therefore, it is necessary to propose a new solution to overcome the problems in the prior art.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. [Summary of the invention]

[0006] The object of the present invention is to provide a semiconductor processing device and a semiconductor processing method thereof, which can efficiently extract and detect contaminant impurities at the edge of a wafer.

[0007] To achieve the above-mentioned object, the present invention provides a semiconductor processing device, which includes: a first chamber part; a second chamber part that can move between an open position and a closed position relative to the first chamber part. When the second chamber part is located at the closed position relative to the first chamber part, the wafer can be accommodated between the first chamber part and the second chamber part, and when the second chamber part is located at the open position relative to the first chamber part, the wafer can be taken out or put in. The first chamber part has a first groove channel formed on its inner wall surface, and the second chamber part has a second groove channel formed on its inner wall surface. When the second chamber part is located at the closed position relative to the first chamber part and the wafer is accommodated between the second chamber part and the first chamber part, the first groove channel and the second groove channel are connected and jointly form an edge channel, and the edge of the wafer extends into the edge channel. The second chamber portion or the first chamber portion comprises a first through hole, a second through hole and a third through hole connecting the edge channel with the outside, and an isolation protrusion located between the first through hole and the second through hole, the first through hole and the second through hole are arranged adjacent to each other, the extraction liquid entering the edge channel through the first through hole flows from the first through hole to the third through hole and flows out from the third through hole, and the extraction liquid entering the edge channel through the second through hole flows from the second through hole to the third through hole and flows out from the third through hole.

[0008] According to another aspect of the present invention, the present invention provides a semiconductor processing method based on the above-mentioned semiconductor processing device, which includes: driving the first-stage extraction liquid into the first-stage edge channel through the first through hole, driving the second-stage extraction liquid into the second-stage edge channel through the second through hole, and due to the tension, the first-stage extraction liquid and the second-stage extraction liquid can both fill the corresponding positions of the edge channel where they are located; when the second-stage extraction liquid is located in the second-stage edge channel, introducing a driving gas into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recovering the first-stage extraction liquid through the third through hole, and then driving the third-stage liquid into the first-stage edge channel through the first through hole, and due to the tension, the third-stage liquid can fill the corresponding positions of the edge channel where it is located The first section of the extraction liquid is located in the first section of the edge channel, and then the driving gas is introduced into the second section of the edge channel through the second through hole to drive the second section of the extraction liquid to the third through hole and recover the second section of the extraction liquid through the third through hole; or, when the first section of the extraction liquid is located in the first section of the edge channel, the driving gas is introduced into the second section of the edge channel through the second through hole to drive the second section of the extraction liquid to the third through hole and recover the second section of the extraction liquid through the third through hole, and then the fourth section of the extraction liquid is driven into the second section of the edge channel through the second through hole. Due to the tension, the fourth section of the extraction liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the first section of the edge channel through the first through hole to drive the first section of the extraction liquid to the third through hole and recover the first section of the extraction liquid through the third through hole.

[0009] Compared with the prior art, in the present invention, the extraction liquid entering the edge channel through the first through hole flows from the first through hole to the third through hole and flows out from the third through hole, and the extraction liquid entering the edge channel through the second through hole flows from the second through hole to the third through hole and flows out from the third through hole, so that the contaminated impurities on the edge of the wafer can be efficiently extracted and detected.

[0010] It should therefore be understood that this overview is provided only for the purpose of summarizing some embodiments in order to provide a basic understanding of some aspects of the present invention. Therefore, the above-described embodiments are merely examples and should not be interpreted as narrowing the scope or ideas of the present invention in any way. The features, appearances, and advantages of the various embodiments will become apparent by reading the following detailed description and the accompanying drawings, which illustrate the principles of some embodiments by way of example.

Brief Description of the Drawings

[0011] The present invention will be more easily understood with reference to the accompanying drawings and the following detailed description, wherein like reference numerals correspond to like structural components, wherein:

[0012] Figure 1 is a schematic diagram of the three-dimensional structure of the first chamber portion in one embodiment of the present invention;

[0013] Figure 2 is a schematic diagram of a top view of the structure of the first chamber portion in one embodiment of the present invention;

[0014] Figure 3 is a schematic diagram of the three-dimensional structure of the second chamber portion in one embodiment of the present invention;

[0015] Figure 4 is a schematic diagram of a top view of the second chamber portion in one embodiment of the present invention;

[0016] Figure 5 for Figure 4 An enlarged view of circle A in FIG.

[0017] Figure 6 is a cross-sectional schematic diagram of a semiconductor processing device in one embodiment of the present invention, wherein the section line of the cross-sectional schematic diagram corresponds to Figure 4 EE line in;

[0018] Figure 7 for Figure 6 An enlarged view of circle B in FIG.

[0019] Figure 8 for Figure 6 An enlarged view of circle C in FIG.

[0020] Fig. 9is a cross-sectional schematic diagram of another position of a semiconductor processing device in one embodiment of the present invention, wherein the section line of the cross-sectional schematic diagram corresponds to Figure 4 FF line in;

[0021] Fig.10 for Fig. 9 An enlarged view of circle D in FIG.

[0022] Fig.11 is a cross-sectional schematic diagram of another position of a semiconductor processing device in one embodiment of the present invention, wherein the section line of the cross-sectional schematic diagram corresponds to Figure 4 The GG line in the

[0023] Fig.12 for Fig.11 An enlarged view of circle H in FIG.

[0024] Fig.13 It is a structural schematic diagram of the edge channel and related structures of the semiconductor processing device in the present invention;

[0025] Figure 14-15 for Fig.13 Schematic diagram of the working principle of the edge channel and related structures in the figure;

[0026] Fig.16 FIG. 1 is a flow chart of a semiconductor processing method in one embodiment of the present invention. [Specific embodiment]

[0027] Some embodiments of the present invention will be described more fully below with reference to the accompanying drawings, in which some, but not all, embodiments are listed. In fact, various embodiments of the present invention can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; on the contrary, these embodiments are provided to make the present invention thorough and complete and will fully convey the scope of the present invention to those skilled in the art. For example, unless otherwise stated, referring to something as first, second, etc. should not be construed as implying a particular order. In addition, something may be described as being higher than something (unless otherwise stated) when it is actually lower than something, and vice versa; similarly, something described as being on the left may be on the right, and vice versa. The same reference figure number always represents the same element.

[0028] The present invention provides a semiconductor processing device, which can efficiently extract and detect contaminated impurities at the edge of a wafer.

[0029] Figure 6 FIG. 2 is a cross-sectional schematic diagram of a semiconductor processing device in one embodiment of the present invention. Figure 6As shown, the semiconductor processing device 100 includes a first chamber portion 110 and a second chamber portion 120 that can move between an open position and a closed position relative to the first chamber portion 110. In this embodiment, the first chamber portion 110 is an upper chamber portion, and the second chamber portion 120 is a lower chamber portion, and the lower chamber portion is driven to move up and down so that the second chamber portion 120 moves between an open position and a closed position relative to the first chamber portion 110. In another embodiment, the first chamber portion 110 can also be a lower chamber portion, and the second chamber portion 120 can be an upper chamber portion, and the upper chamber portion can be driven to move up and down so that the second chamber portion 120 moves between an open position and a closed position relative to the first chamber portion 110. The movement between the second chamber portion 120 and the first chamber portion 110 is relative, and the second chamber portion 120 can be moved, or the first chamber portion 110 can be moved. When the second chamber portion 120 is located at the closed position relative to the first chamber portion 110, the wafer 200 can be accommodated between the first chamber portion 110 and the second chamber portion 120, and when the second chamber portion 120 is located at the open position relative to the first chamber portion 110, the wafer 200 can be taken out or put in.

[0030] Figure 1 is a schematic diagram of the three-dimensional structure of the first chamber portion 110 in one embodiment of the present invention; Figure 2 FIG. 1 is a schematic diagram of a top view of the first chamber portion 110 in one embodiment of the present invention. Figure 3 FIG. 1 is a schematic diagram of the three-dimensional structure of the second chamber portion 120 in one embodiment of the present invention. Figure 4 FIG. 1 is a schematic diagram of a top view of the second chamber portion 120 in one embodiment of the present invention; Figure 5 for Figure 4 Magnified view of circle A in FIG. Figure 6 is a cross-sectional schematic diagram of a semiconductor processing device in one embodiment of the present invention, wherein the section line of the cross-sectional schematic diagram corresponds to Figure 4 EE line in; Figure 7 for Figure 6 An enlarged view of circle B in FIG. Figure 8 for Figure 6 Magnified view of circle C in FIG. Fig. 9 is a cross-sectional schematic diagram of another position of a semiconductor processing device in one embodiment of the present invention, wherein the section line of the cross-sectional schematic diagram corresponds to Figure 4 FF line in; Fig.10 for Fig. 9 Magnified view of circle D in FIG. Fig.11 is a cross-sectional schematic diagram of another position of a semiconductor processing device in one embodiment of the present invention, wherein the section line of the cross-sectional schematic diagram corresponds to Figure 4 The GG line in. Fig.12 for Fig.11 Magnified view of circle H in FIG. Fig.13 It is a schematic structural diagram of the edge channel and related structures of the semiconductor processing device in the present invention. Figure 14-15 for Fig.13 Schematic diagram of the working principle of edge channels and related structures in . Fig.16 FIG. 1 is a flow chart of a semiconductor processing method in one embodiment of the present invention.

[0031] Combination Figure 1-12 As shown, the first chamber portion 110 has a first groove channel 111 formed on the inner wall surface thereof, and the second chamber portion 120 has a second groove channel 121 formed on the inner wall surface thereof. Figure 7 , 8 As shown in 10, when the second chamber portion 120 is located in the closed position relative to the first chamber portion 110 and the wafer 200 is accommodated between the second chamber portion 120 and the first chamber portion 110, the first groove channel 111 and the second groove channel 121 are connected and together form an edge channel 130, and the edge 210 of the wafer 200 extends into the edge channel 130.

[0032] In one embodiment, Figure 3 , 4 As shown in FIGS. 5, 8 and 12, the second chamber portion 120 has a first through hole 122, a second through hole 123 and a third through hole 124 for connecting the edge channel 130 with the outside, and an isolation protrusion 125 located between the first through hole 122 and the second through hole 123. The first through hole 122 and the second through hole 123 are arranged adjacent to each other. Figure 13-Figure 15 As shown, the extraction liquid entering the edge channel 130 through the first through hole 122 flows from the first through hole 122 to the third through hole 124 and flows out from the third through hole 124 , and the extraction liquid entering the edge channel 130 through the second through hole 123 flows from the second through hole 123 to the third through hole 124 and flows out from the third through hole 124 .

[0033] like Figure 5 , 8 As shown in FIG. 13 , the isolation protrusion 125 blocks the edge channel 130 so that the edge channel 130 forms an unclosed ring. The edge channel between the first through hole 122 and the third through hole 124 is called the first section edge channel 131, and the edge channel between the second through hole 123 and the third through hole 124 is called the second section edge channel 132.

[0034] In one embodiment, the first through hole 122 and the second through hole 123 are located on one side of the edge channel, and the third through hole 124 is located on the other side of the edge channel. Fig.13In the embodiment, the length of the first edge channel 131 is equal to the length of the second edge channel 132. Of course, in other embodiments, the length of the first edge channel 131 and the length of the second edge channel 132 may be unequal.

[0035] In one embodiment, the semiconductor processing apparatus 100 may be used to perform contaminant extraction on the edge 210 of the wafer 200 . Fig.16 FIG. 5 is a flow chart of a semiconductor processing method 500 in one embodiment of the present invention. The semiconductor processing method 500 uses the semiconductor processing device 100 to extract contaminants from the edge 210 of the wafer 200. The semiconductor processing method 500 includes the following steps.

[0036] Step 510: Fig.14 As shown, the first extraction liquid 310 is driven to enter the first edge channel 131 through the first through hole 122, and the second extraction liquid 320 is driven to enter the second edge channel 132 through the second through hole 123. Due to the tension, the first extraction liquid 310 and the second extraction liquid 320 can fill the corresponding positions of the edge channels where they are located.

[0037] Step 520: In one embodiment, Fig.15 As shown, when the second extraction liquid 320 is located in the second edge channel 132, the driving gas is introduced into the first edge channel 131 through the first through hole 122 to drive the first extraction liquid 310 to the third through hole 124 and recover the first extraction liquid 310 through the third through hole 124, and then the third liquid (not shown) is driven through the first through hole into the first edge channel 131 (with the first through hole 124). Fig.12 The first segment of the extraction liquid 310 is located in the same position), due to the tension, the third segment of the liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the second segment of the edge channel 132 through the second through hole 123 to drive the second segment of the extraction liquid 320 to the third through hole 124 and recover the second segment of the extraction liquid 320 through the third through hole 124. In another alternative embodiment, when the first segment of the extraction liquid 310 is located in the first segment of the edge channel 131, the driving gas is introduced into the second segment of the edge channel 132 through the second through hole 123 to drive the second segment of the extraction liquid 320 to the third through hole 124 and recover the second segment of the extraction liquid 320 through the third through hole 124, and then the fourth segment of the liquid (not shown) is driven through the second through hole 123 into the second segment of the edge channel 132 (with Fig.12The second section of the extraction liquid 320 is located at the same position), due to the tension, the fourth section of the liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the first section edge channel 131 through the first through hole 122 to drive the first section of the extraction liquid 310 to the third through hole 124 and recover the first section of the extraction liquid 310 through the third through hole 124.

[0038] Step 530, based on the recovered first extract, or the recovered second extract, or the mixture of the recovered first extract and the second extract, a pollutant detection is performed. In other words, the recovered first extract or the recovered second extract may be detected for pollutants alone, or the recovered first extract and the recovered second extract may be mixed and then the mixed solution is detected for pollutants. The pollutant may be a metal pollutant, which may also be called a metal impurity, and of course the pollutant may also be other pollutants.

[0039] Step 540, in one embodiment, after the first section extraction liquid 310 and the second section extraction liquid 320 are recovered, a driving gas is introduced into the first section edge channel 131 through the first through hole 122 to drive the third section liquid to the third through hole 124 and the waste liquid is recovered through the third through hole 124. In another embodiment, a driving gas can be introduced into the second section edge channel 132 through the second through hole 123 to drive the fourth section liquid to the third through hole 124 and the waste liquid is recovered through the third through hole 124. In yet another embodiment, a negative pressure is provided at the third through hole 124 so that the third section liquid or the fourth section liquid is recovered to the waste liquid bottle. It should be noted that the third section liquid and the fourth section liquid do not exist at the same time, but either the third section liquid or the fourth section liquid exists.

[0040] In order to obtain more extraction liquid, steps 510 - 520 and 540 may be repeated, so that a plurality of first-stage extraction liquids may flow through the first-stage edge channel 131 in sequence, and a plurality of second-stage extraction liquids may flow through the second-stage edge channel 132 in sequence.

[0041] Before step 510, the semiconductor processing method 500 further includes:

[0042] A hydrofluoric acid mixed gas is introduced into the first edge channel 131 and the second edge channel 132 through the first through hole 122 and the second through hole 123 respectively, and the waste gas is recovered through the third through hole 124 to corrode the edge of the wafer 200, making it easier to extract pollutants later.

[0043] When the first extraction liquid 310 is driven to flow from the first through hole 122 to the third through hole 124, the first extraction liquid 310 flows through the edge portion of the wafer 200 extending into the first edge channel 131 to extract the contaminants on this edge portion of the wafer 200. When the second extraction liquid 320 is driven to flow from the second through hole 123 to the third through hole 124, the second extraction liquid 320 flows through the edge portion of the wafer 200 extending into the second edge channel 132 to extract the contaminants on this edge portion of the wafer 200. Specifically, the extraction liquid can dissolve the contaminants and carry them away by physically or chemically reacting with the contaminants.

[0044] like Fig.14 As shown, after the first-stage extraction liquid 310 is driven to enter the first-stage edge channel 131 through the first through hole 122, the first-stage extraction liquid 310 is stopped at the first position, and after the third-stage extraction liquid is driven to enter the first-stage edge channel 131 through the first through hole 122, the third-stage extraction liquid is stopped at the first position, and the first position is the position of the first through hole 122. After the second-stage extraction liquid 320 is driven to enter the second-stage edge channel 132 through the second through hole 123, the second-stage extraction liquid 320 is stopped at the second position, and after the fourth-stage extraction liquid is driven to enter the second-stage edge channel 132 through the second through hole 123, the fourth-stage extraction liquid is stopped at the second position, and the second position is the position of the second through hole 123.

[0045] The first extraction liquid 310 and the third liquid (if any) provide a liquid seal at the first position of the edge channel to prevent the driving gas from passing through the first position when the driving gas is introduced through the second through hole. The second extraction liquid 320 and the fourth liquid (if any) provide a liquid seal at the second position of the edge channel to prevent the gas from passing through the second position when the driving gas is introduced through the first through hole.

[0046] If the second segment of the extraction liquid 320 is not located in the second segment of the edge channel 132 during the process of driving the first segment of the extraction liquid 310 to the third segment of the extraction liquid 310 by introducing the driving gas into the first segment of the edge channel 131 through the first through hole 122, then due to the lack of the sealing effect of the second segment of the extraction liquid 320, part of the driving gas will pass through the gap between the isolation protrusion 125 and the first chamber portion 110 and enter the second segment of the edge channel 132, so that the forward speed of the first segment of the extraction liquid 310 cannot be accurately controlled, and may even cause the first segment of the extraction liquid 310 to be unable to advance to the third through hole 124. If the first through hole 122 and the second through hole 123 are combined into one through hole, that is, the edge channel 130 forms a complete ring, it is impossible to accurately control a segment of the extraction liquid to move along the edge channel 130.

[0047] In one embodiment, the volumes of the first extract, the second extract, the third liquid, and the fourth liquid are all less than 3 ml. For example, the first extract and the second extract can be 0.5 mL, so that the total volume of the first extract and the second extract is 1 mL, so as to facilitate subsequent detection and calculation. The volume of the first extract is equal to the volume of the second extract, and the first edge channel 131 and the second edge channel 132 are provided so that the first extract and the second extract can be mixed to calculate the contaminants on the edge 210 of the wafer 200. In the present invention, the volume of each extract is very small, so that the concentration of the contaminants can be increased, thereby improving the detection limit.

[0048] In the present invention, the edge channel 130 is a closed channel, so that the extraction liquid entering the edge channel 130 through the first through hole 122 can only flow along the edge channel 130 from the first through hole 122 to the third through hole 124, and the extraction liquid entering the edge channel 130 through the second through hole 123 can only flow along the edge channel from the second through hole 123 to the third through hole 124. The flow rate of the extraction liquid in the edge channel 130 is less than 5ml / min, for example, 3ml / min. In the present invention, the first section of the extraction liquid 310 and the second section of the extraction liquid 320 can be controlled to move along the edge channel 130 at a uniform and slow speed, so that the extraction liquid has sufficient time to react with the contaminants on the edge of the wafer.

[0049] like Figure 1 , 2 As shown in FIGS. 7 and 8, the first chamber portion 110 has a fourth through hole 112 opposite to the third through hole 124, and a fifth through hole 113 opposite to the isolation protrusion 125. After the extraction liquid enters the third through hole 124, a driving gas is introduced from the fourth through hole 112 to allow the extraction liquid to leave the edge channel 130 more quickly. When extracting pollutants from the edge 210 of the wafer 200, gas is introduced inwardly through the fifth through hole 113 to maintain a certain gas pressure, so as to prevent the driving gas entering through the first through hole 122 from entering the second edge channel 132 through the isolation protrusion 125, and the driving gas entering through the second through hole 123 from entering the first edge channel 131 through the isolation protrusion 125.

[0050] like Figure 7 and 13 As shown, the third through hole 124 includes a groove joint portion 1241 connected to the edge channel 130 and a through hole tube portion 1242 connected to the groove joint portion, and the groove joint portion 1241 serves as a funnel mouth of the through hole tube portion 1242, which can make the extraction liquid easier to be collected and the flowing extraction liquid will not cross the third through hole 124.

[0051] The details of the present invention can be more clearly understood by combining the accompanying drawings and the description of the specific embodiments of the present invention. However, the specific embodiments of the present invention described herein are only used for the purpose of explaining the present invention and cannot be understood as limiting the present invention in any way. Under the guidance of the present invention, technicians can conceive of any possible variations based on the present invention, which should be regarded as belonging to the scope of the present invention. It should be noted that when an element is referred to as "arranged on" another element, it can be directly on another element or there can also be a central element. When an element is considered to be "connected" to another element, it can be directly connected to another element or there may be a central element at the same time. The terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a mechanical connection or an electrical connection, or it can be the communication between the two elements, it can be directly connected, or it can be indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances. The terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation method.

[0052] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0053] Many modifications and other implementations of the present invention involve those skilled in the art who have relevant industry knowledge and some original data. Therefore, it should be understood that the present invention is not limited to the specific embodiments disclosed, but also includes other embodiments modified within the scope of the attached claims. In addition, although the foregoing description and related drawings describe the implementation of specific embodiment combinations of elements and functions, within the scope of the attached claims, elements and functions that are implemented in different combinations by substitution are also included. The attached claims also include combinations of elements and functions that are different from the elements and functions explicitly described above. Although specific terms are used herein, they are intended to be generally descriptive only and are not used for limiting purposes.

Claims

1. A semiconductor processing device, It is characterized in that It includes: a first chamber portion; a second chamber portion movable between an open position and a closed position relative to the first chamber portion, wherein when the second chamber portion is in the closed position relative to the first chamber portion, a wafer can be accommodated between the first chamber portion and the second chamber portion, and when the second chamber portion is in the open position relative to the first chamber portion, the wafer can be taken out or put in; The first chamber portion has a first groove channel formed on its inner wall surface, and the second chamber portion has a second groove channel formed on its inner wall surface. When the second chamber portion is located at the closed position relative to the first chamber portion and the wafer is accommodated between the second chamber portion and the first chamber portion, the first groove channel and the second groove channel are connected to form an edge channel together, and the edge of the wafer extends into the edge channel. The second chamber portion or the first chamber portion comprises a first through hole, a second through hole and a third through hole connecting the edge channel with the outside, and an isolation protrusion located between the first through hole and the second through hole, the first through hole and the second through hole are arranged adjacent to each other, the extraction liquid entering the edge channel through the first through hole flows from the first through hole to the third through hole and flows out from the third through hole, and the extraction liquid entering the edge channel through the second through hole flows from the second through hole to the third through hole and flows out from the third through hole.

2. The semiconductor processing device according to claim 1, It is characterized in that The isolation protrusion blocks the edge channel so that the edge channel forms an unclosed ring. The edge channel between the first through hole and the third through hole is called the first section edge channel, and the edge channel between the second through hole and the third through hole is called the second section edge channel.

3. The semiconductor processing device according to claim 2, It is characterized in that The first through hole and the second through hole are located on one side of the edge channel, and the third through hole is located on the other side of the edge channel. The length of the first edge channel is equal to the length of the second edge channel.

4. The semiconductor processing device according to claim 2, It is characterized in that When performing contaminant extraction on the edge of the wafer, the following operations are performed: The first extraction liquid is driven to enter the first edge channel through the first through hole, and the second extraction liquid is driven to enter the second edge channel through the second through hole. Due to the tension, the first extraction liquid and the second extraction liquid can both fill the corresponding positions of the edge channel where they are located; When the second-stage extraction liquid is located in the second-stage edge channel, a driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole, and then the third-stage liquid is driven into the first-stage edge channel through the first through hole. Due to the tension, the third-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole; or, when the first-stage extraction liquid is located in the first-stage edge channel, a driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole, and then the fourth-stage liquid is driven into the second-stage edge channel through the second through hole. Due to the tension, the fourth-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole.

5. The semiconductor processing device according to claim 4, It is characterized in that When the first extraction liquid is driven to flow from the first through hole to the third through hole, the first extraction liquid flows through the edge of the wafer extending into the first edge channel to extract the contaminants on the edge of the wafer. When the second extraction liquid is driven to flow from the second through hole to the third through hole, the second extraction liquid flows through the edge of the wafer extending into the second edge channel to extract the contaminants on the edge of the wafer. The pollutant detection is performed based on the recovered first-stage extract, or the recovered second-stage extract, or the mixed solution of the recovered first-stage extract and the second-stage extract.

6. The semiconductor processing device according to claim 4, It is characterized in that After driving the first extraction liquid through the first through hole into the first edge channel, the first extraction liquid is stopped at the first position; after driving the third extraction liquid through the first through hole into the first edge channel, the third extraction liquid is stopped at the first position, the first position being the position of the first through hole. After driving the second extraction liquid through the second through hole into the second edge channel, the second extraction liquid is stopped at the second position; after driving the fourth liquid through the second through hole into the second edge channel, the fourth liquid is stopped at the second position, where the second position is where the second through hole is located. The first stage of extraction liquid and the third stage of liquid provide a liquid seal at the first location of the edge channel to prevent gas from passing through the first location; The second stage extraction liquid and the fourth stage liquid provide a liquid seal at the second location of the edge channel to prevent gas from passing through the second location.

7. The semiconductor processing apparatus according to claim 4, It is characterized in that The volumes of the first extract, the second extract, the third liquid, and the fourth liquid are all less than 3 ml. The volume of the first extract is equal to the volume of the second extract. The edge channel is a closed channel, so that the extraction liquid entering the edge channel through the first through hole can only flow along the edge channel from the first through hole to the third through hole, and the extraction liquid entering the edge channel through the second through hole can only flow along the edge channel from the second through hole to the third through hole. After both the first and second extraction liquids are recovered, a driving gas is introduced into the first edge channel through the first through hole to drive the third liquid to the third through hole and the waste liquid is recovered through the third through hole, or a driving gas is introduced into the second edge channel through the second through hole to drive the fourth liquid to the third through hole and the waste liquid is recovered through the third through hole, or a negative pressure is provided at the third through hole so that the third liquid or the fourth liquid is recovered to the waste liquid bottle.

8. The semiconductor processing apparatus according to claim 4, It is characterized in that Before driving the first and second extraction liquids into the edge channel, hydrofluoric acid mixed gas is introduced into the first and second edge channels through the first and second through holes respectively, and waste gas is recovered through the third through hole. The first chamber portion or the second chamber portion has a fourth through hole opposite to the third through hole, and after the extraction liquid enters the third through hole, a driving gas is introduced from the fourth through hole to make the extraction liquid leave the edge channel more quickly. The first chamber portion or the second chamber portion has a fifth through hole opposite to the isolation protrusion. When extracting contaminants from the edge of the wafer, gas is introduced into the wafer through the fifth through hole to maintain a certain gas pressure. The third through hole includes a groove joint portion communicating with the edge channel and a through hole tube portion communicating with the groove joint portion, and the groove joint portion serves as a funnel opening of the through hole tube portion.

9. A semiconductor processing method based on the semiconductor processing device according to any one of claims 1 to 8, It is characterized in that It includes: The first extraction liquid is driven to enter the first edge channel through the first through hole, and the second extraction liquid is driven to enter the second edge channel through the second through hole. Due to the tension, the first extraction liquid and the second extraction liquid can both fill the corresponding positions of the edge channel where they are located; When the second-stage extraction liquid is located in the second-stage edge channel, a driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole, and then the third-stage liquid is driven into the first-stage edge channel through the first through hole. Due to the tension, the third-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole; or, when the first-stage extraction liquid is located in the first-stage edge channel, a driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole, and then the fourth-stage liquid is driven into the second-stage edge channel through the second through hole. Due to the tension, the fourth-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole.

10. The semiconductor processing method according to claim 9, It is characterized in that It also includes: Based on the recovered first extract, or the recovered second extract, or the mixture of the recovered first extract and the second extract, the pollutant detection is performed. When the first section of the extraction liquid is driven to flow from the first through hole to the third through hole, the first section of the extraction liquid flows over the edge of the wafer extending into the first section of the edge channel to extract the contaminants on this edge of the wafer; when the second section of the extraction liquid is driven to flow from the second through hole to the third through hole, the second section of the extraction liquid flows over the edge of the wafer extending into the second section of the edge channel to extract the contaminants on this edge of the wafer.

11. The semiconductor processing method according to claim 9, It is characterized in that After the first extract and the second extract are recovered, the method further comprises: A driving gas is introduced into the first section edge channel through the first through hole to drive the third section liquid to the third through hole and the waste liquid is recovered through the third through hole. Alternatively, a driving gas is introduced into the second section edge channel through the second through hole to drive the fourth section liquid to the third through hole and the waste liquid is recovered through the third through hole. Alternatively, a negative pressure is provided at the third through hole so that the third section liquid or the fourth section liquid is recovered to the waste liquid bottle.

12. The semiconductor processing method according to claim 9, It is characterized in that Before driving the first extraction liquid and the second extraction liquid into the edge channel, it also includes: The hydrofluoric acid mixed gas is introduced into the first section edge channel and the second section edge channel through the first through hole and the second through hole respectively, and the waste gas is recovered through the third through hole.

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