Epitaxial structure of compound semiconductor laser

Abstract

The invention discloses an epitaxial structure of a compound semiconductor laser, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, the electron phonon coupling layer comprises a first electron phonon coupling layer, a second electron phonon coupling layer and a third electron phonon coupling layer. According to the invention, the non-local effect between electrons and phonons is generated, the electron dimension is reduced, the electron-phonon coupling strength is enhanced, the coupling charge of the active layer is enhanced, the migration distance of carriers is shortened, the electron transmission is accelerated, the carrier injection uniformity is improved, and the anti-ESD capability, the optical power and the slope efficiency of the laser are improved. Meanwhile, the interaction between dipoles is reduced, annihilation of non-radiative composite exciton pairs is inhibited, the scattering rate of electronic phonons is reduced, strong charge fluctuation is generated, the injection efficiency and interface conductivity of holes are enhanced, and the voltage and resistance of the laser are reduced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to an epitaxial structure of a compound semiconductor laser. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, metal processing and cutting, precision welding, high-density optical storage, submarine communication, atomic clocks, quantum sensors and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, high brightness, good directionality, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Lasers are based on the principle of stimulated radiation, while light-emitting diodes are based on the principle of spontaneous radiation; lasers are generated by stimulated radiation of carriers, with a narrow spectral half-width, excellent monochromaticity, and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are based on spontaneous radiation, with a large spectral half-width and no monochromaticity. The output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The large internal lattice mismatch and strain cause strong polarization effect, and the QCSE quantum confined Stark effect strongly limits the improvement of the laser lasing gain;

[0010] 2) The optical waveguide absorption loss is high. The inherent carbon impurities in the p-type semiconductor will compensate the acceptor and destroy the p-type. The p-type doping has a low ionization rate. A large amount of unionized Mg acceptor impurities will cause the internal optical loss to increase. In addition, the refractive index dispersion of the laser and the limiting factor decrease with the increase of wavelength, resulting in a decrease in the mode gain of the laser.

[0011] 3) The activation energy of the Mg acceptor in p-type semiconductors is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, holes overflow the active layer, and other problems. The hole injection is uneven and the efficiency is low, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency.

[0012] 4) The step difference of the laser valence band increases, the hole transport in the quantum well becomes more difficult, the carrier injection is uneven, and the gain is uneven; after the laser is lased, the carrier concentration in the multi-quantum well active region is saturated, the bipolar conductivity effect is weakened, and the series resistance of the laser increases, resulting in an increase in the laser voltage. Summary of the invention

[0013] The present invention proposes an epitaxial structure of a compound semiconductor laser, which generates a non-local effect between electrons and phonons, reduces electron dimensions, enhances electron-phonon coupling strength, enhances coupled charges of an active layer, shortens carrier migration distances, accelerates electron transmission, improves carrier injection uniformity, enhances ESD resistance, optical power and slope efficiency of the laser, reduces dipole-dipole interaction, inhibits annihilation of non-radiative composite exciton pairs, reduces electron-phonon scattering rate, generates strong charge fluctuations, enhances hole injection efficiency and interface conductivity, reduces voltage and resistance of the laser, introduces Dirac electron points of energy band topology, enhances confinement factors, reduces internal optical losses, and enhances mode gain of the laser, thereby reducing the excitation threshold of the laser element and enhancing the optical power and slope efficiency of the laser element.

[0014] The epitaxial structure of a compound semiconductor laser provided by the present invention comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein an electron-phonon coupling layer is provided above the upper confinement layer, and the electron-phonon coupling layer comprises a first electron-phonon coupling layer, a second electron-phonon coupling layer, and a third electron-phonon coupling layer.

[0015] Preferably, the valence band effective state density distribution of the first electron-phonon coupling layer has a function y=A+B*lnx-C*e x curve distribution; the valence band effective state density distribution of the second electron-phonon coupling layer has a linear function curve distribution; the valence band effective state density distribution of the third electron-phonon coupling layer has a function y=D+E*lnx / x curve distribution; the valence band effective state density of the first electron-phonon coupling layer is d, the valence band effective state density of the second electron-phonon coupling layer is e, and the valence band effective state density of the third electron-phonon coupling layer is f, wherein: 1E18≤f≤e≤d≤5E21(cm -3 ).

[0016] Preferably, the electron mobility distribution of the first electron-phonon coupling layer has a first quadrant curve distribution of function y=F+G*x+1 / 2x; the electron mobility distribution of the second electron-phonon coupling layer has a linear function curve distribution; the electron mobility distribution of the third electron-phonon coupling layer has a first quadrant curve distribution of function y=H+I*x / lnx; the electron mobility of the first electron-phonon coupling layer is g, the electron mobility of the second electron-phonon coupling layer is h, and the electron mobility of the third electron-phonon coupling layer is i, wherein: 5≤g≤h≤i≤8000(cm 2 / vs).

[0017] Preferably, the electron affinity energy distribution of the first electron-phonon coupling layer has a function y=J+K*e x / x 2 The electron affinity energy distribution of the first quadrant has a linear function curve distribution; the electron affinity energy distribution of the second electron-phonon coupling layer has a linear function curve distribution; the electron affinity energy distribution of the third electron-phonon coupling layer has a function y=L+M*sinx / x 2 The first quadrant curve is distributed; the electron affinity of the first electron-phonon coupling layer is j, the electron affinity of the second electron-phonon coupling layer is k, and the electron affinity of the third electron-phonon coupling layer is l, wherein: 0.1≤j≤k≤l≤15 (eV).

[0018] Preferably, the transverse phonon velocity distribution of the first electron-phonon coupling layer has a function y=N+P*lnx-x+1 curve distribution; the transverse phonon velocity distribution of the second electron-phonon coupling layer has a linear function curve distribution; the transverse phonon velocity distribution of the third electron-phonon coupling layer has a function y=Q+R*lnx / e x Curve distribution; the transverse phonon velocity of the first electron-phonon coupling layer is m, the transverse phonon velocity of the second electron-phonon coupling layer is n, and the transverse phonon velocity of the third electron-phonon coupling layer is p, wherein: 5E4≤p≤n≤m≤5E7 (eV).

[0019] Preferably, the polari-optical phonon energy distribution of the first electron-phonon coupling layer has a function y=S+T*e x / x first quadrant curve distribution; the polari-optical phonon energy distribution of the second electron-phonon coupling layer has a linear function curve distribution; the polari-optical phonon energy distribution of the third electron-phonon coupling layer has a function y=U+V*(e x +e -x ) / (e x -e -x ) The first quadrant curve distribution; the polari-optical phonon energy of the first electron-phonon coupling layer is m, the polari-optical phonon energy of the second electron-phonon coupling layer is n, and the polari-optical phonon energy of the third electron-phonon coupling layer is p, wherein: 50≤p≤n≤m≤800 (meV).

[0020] Preferably, the electron-phonon coupling layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof.

[0021] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3, BN, diamond, any one or any combination thereof, with a thickness of 10 to 100 angstroms, and a barrier layer of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof, with a thickness of 10 to 200 angstroms.

[0022] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof.

[0023] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, Cu, Mo, TiW, W, CuW, GaN, GaAs, InP, InAs, GaSb, diamond, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO 2 / SiN x Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0024] Compared with the prior art, the epitaxial structure of a compound semiconductor laser provided in an embodiment of the present invention has the following beneficial effects:

[0025] 1. Through the specially designed valence band effective state density distribution, specially designed electron mobility distribution and specially designed lateral phonon velocity distribution, the non-local effect between electrons and phonons is generated, the electron dimension is reduced, the electron-phonon coupling strength is enhanced, the coupling charge of the active layer is enhanced, the migration distance of the carriers is shortened, the electron transmission is accelerated, the uniformity of carrier injection is improved, and the anti-ESD capability, optical power and slope efficiency of the laser are improved;

[0026] 2. Through the specially designed electron affinity energy distribution and the specially designed polarized optical phonon energy distribution, the electron-phonon coupling layer reduces the dipole-dipole interaction, suppresses the annihilation of non-radiative composite exciton pairs, reduces the electron-phonon scattering rate, generates strong charge fluctuations, enhances the hole injection efficiency and interface conductivity, reduces the voltage and resistance of the laser, and introduces the Dirac electron point of the band topology, improves the limitation factor, reduces the internal optical loss, and improves the mode gain of the laser, thereby reducing the excitation threshold of the laser element and improving the optical power and slope efficiency of the laser element;

[0027] 3. Generate non-local effects between electrons and phonons, reduce electron dimensions, enhance electron-phonon coupling strength, enhance coupled charges in the active layer, shorten carrier migration distances, accelerate electron transmission, improve carrier injection uniformity, and enhance the laser's ESD resistance, optical power, and slope efficiency. At the same time, reduce dipole-dipole interactions, inhibit the annihilation of non-radiative composite exciton pairs, reduce the electron-phonon scattering rate, generate strong charge fluctuations, enhance hole injection efficiency and interface conductivity, reduce the voltage and resistance of the laser, and introduce Dirac electron points of band topology to enhance the confinement factor, reduce internal optical losses, and enhance the laser's mode gain, thereby reducing the excitation threshold of the laser element and enhancing the optical power and slope efficiency of the laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 The present invention provides a schematic structural diagram of an epitaxial structure of a compound semiconductor laser.

[0029] Figure 2 This is a SIMS secondary ion mass spectrum of the epitaxial structure of a compound semiconductor laser provided by the present invention.

[0030] Markings in the figure: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: electron-phonon coupling layer; 106a: first electron-phonon coupling layer; 106b: second electron-phonon coupling layer; 106c: third electron-phonon coupling layer. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] In order to solve the above problems, the epitaxial structure of a compound semiconductor laser provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0033] Reference Figure 1-2 The epitaxial structure of a compound semiconductor laser provided by the present invention includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. An electron-phonon coupling layer 106 is provided above the upper confinement layer 105. The electron-phonon coupling layer 106 includes a first electron-phonon coupling layer 106a, a second electron-phonon coupling layer 106b, and a third electron-phonon coupling layer 106c.

[0034] Wherein, the electron-phonon coupling layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof.

[0035] The valence band effective state density distribution of the first electron-phonon coupling layer 106a has a function y=A+B*lnx-C*e xcurve distribution; the valence band effective state density distribution of the second electron-phonon coupling layer 106b has a linear function curve distribution; the valence band effective state density distribution of the third electron-phonon coupling layer 106c has a function y=D+E*lnx / x curve distribution; the electron mobility distribution of the first electron-phonon coupling layer 106a has a function y=F+G*x+1 / 2x first quadrant curve distribution; the electron mobility distribution of the second electron-phonon coupling layer 106b has a linear function curve distribution; the electron mobility distribution of the third electron-phonon coupling layer 106c has a function y=H+I*x / lnx first quadrant curve distribution; the transverse phonon velocity distribution of the first electron-phonon coupling layer 106a has a function y=N+P*lnx-x+1 curve distribution; the transverse phonon velocity distribution of the second electron-phonon coupling layer 106b has a linear function curve distribution; the transverse phonon velocity distribution of the third electron-phonon coupling layer 106c has a function y=Q+R*lnx / e x Curve distribution;

[0036] The electron-phonon coupling layer 106 generates a non-local effect between electrons and phonons through a specifically designed valence band effective state density distribution, a specifically designed electron mobility distribution, and a specifically designed lateral phonon velocity distribution, thereby reducing the electron dimension, enhancing the electron-phonon coupling strength, enhancing the coupled charge of the active layer, shortening the carrier migration distance, accelerating electron transmission, improving the carrier injection uniformity, and improving the laser's ESD resistance, optical power, and slope efficiency;

[0037] The electron affinity energy distribution of the first electron-phonon coupling layer 106a has a function y=J+K*e x / x 2 The electron affinity energy distribution of the second electron-phonon coupling layer 106b has a linear function curve distribution; the electron affinity energy distribution of the third electron-phonon coupling layer 106c has a function y=L+M*sinx / x 2 The first quadrant curve distribution; the polarization optical phonon energy distribution of the first electron-phonon coupling layer 106a has the function y=S+T*e x / x first quadrant curve distribution; the polarization optical phonon energy distribution of the second electron-phonon coupling layer 106b has a linear function curve distribution; the polarization optical phonon energy distribution of the third electron-phonon coupling layer 106c has a function y=U+V*(e x +e -x ) / (e x -e -x ) The first quadrant curve distribution;

[0038] The electron-phonon coupling layer 106 reduces dipole-dipole interaction, inhibits annihilation of non-radiative composite exciton pairs, reduces electron-phonon scattering rate, generates strong charge fluctuations, enhances hole injection efficiency and interface conductivity, reduces voltage and resistance of the laser, introduces Dirac electron points of energy band topology, improves limitation factor, reduces internal optical loss, and improves mode gain of the laser, thereby reducing the excitation threshold of the laser element and improving the optical power and slope efficiency of the laser element.

[0039] The valence band effective state density distribution of the first electron-phonon coupling layer 106a has a function y=lnx-e x curve distribution; the valence band effective state density distribution of the second electron-phonon coupling layer 106b has a linear function curve distribution; the valence band effective state density distribution of the third electron-phonon coupling layer 106c has a function y=lnx / x curve distribution; the valence band effective state density of the first electron-phonon coupling layer 106a is d, the valence band effective state density of the second electron-phonon coupling layer 106b is e, and the valence band effective state density of the third electron-phonon coupling layer 106c is f, wherein: 1E18≤f≤e≤d≤5E21(cm -3 ); the breakdown field intensity distribution of the first electron-phonon coupling layer 106a has a first quadrant curve distribution of function y=x+1 / 2x; the breakdown field intensity distribution of the second electron-phonon coupling layer 106b has a linear function curve distribution; the breakdown field intensity distribution of the third electron-phonon coupling layer 106c has a first quadrant curve distribution of function y=x / lnx;

[0040] The electron-phonon coupling layer 106 can produce a non-local effect between electrons and phonons, reduce electron dimensions, enhance electron-phonon coupling strength, enhance coupled charges of the active layer, shorten carrier migration distances, accelerate electron transmission, improve carrier injection uniformity, and enhance the anti-ESD capability, optical power, and slope efficiency of the laser. At the same time, the electron-phonon coupling layer 106 reduces dipole-dipole interactions, inhibits the annihilation of non-radiative composite exciton pairs, reduces the electron-phonon scattering rate, generates strong charge fluctuations, enhances hole injection efficiency and interface conductivity, reduces the voltage and resistance of the laser, and introduces Dirac electron points of the energy band topology, enhances the confinement factor, reduces internal optical losses, and enhances the mode gain of the laser, thereby reducing the excitation threshold of the laser element and enhancing the optical power and slope efficiency of the laser element.

[0041] The specific data are shown in the following table, which compares the data of the traditional laser and the laser of the present invention.

[0042] Blue Laser Project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.67 109％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.65 -73％ Optical power(W) 4.1 12.9 215％ Voltage (V) 6.5 4.32 -34％ Limiting Factor 1.40％ 3.15％ 125％ <![CDATA[Internal optical loss (cm -1 )]]> 17.2 11.6 -33％ Series resistance (Ω) 17 6.4 -62％ HBM 100KV ESD pass rate 50％ 99％ 97％ HBM 200KV ESD pass rate 15％ 92％ 514％

[0043] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination thereof, with a thickness of 10 to 100 angstroms, and a barrier layer of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof, with a thickness of 10 to 200 angstroms.

[0044] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof.

[0045] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, Cu, Mo, TiW, W, CuW, GaN, GaAs, InP, InAs, GaSb, diamond, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO 2 / SiNx Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0046] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. An epitaxial structure of a compound semiconductor laser, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: An electron-phonon coupling layer (106) is disposed above the upper confinement layer (105), and the electron-phonon coupling layer (106) includes a first electron-phonon coupling layer (106a), a second electron-phonon coupling layer (106b), and a third electron-phonon coupling layer (106c).

2. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The valence band effective state density distribution of the first electron-phonon coupling layer (106a) has a function y=A+B*lnx-C*e x The effective state density of the valence band of the second electron-phonon coupling layer (106b) has a linear function curve distribution; the effective state density of the valence band of the third electron-phonon coupling layer (106c) has a function y=D+E*lnx / x curve distribution; the effective state density of the valence band of the first electron-phonon coupling layer (106a) is d, the effective state density of the valence band of the second electron-phonon coupling layer (106b) is e, and the effective state density of the valence band of the third electron-phonon coupling layer (106c) is f, wherein: 1E18≤f≤e≤d≤5E21(cm -3 ).

3. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The electron mobility distribution of the first electron-phonon coupling layer (106a) has a first quadrant curve distribution of the function y=F+G*x+1 / 2x; the electron mobility distribution of the second electron-phonon coupling layer (106b) has a linear function curve distribution; the electron mobility distribution of the third electron-phonon coupling layer (106c) has a first quadrant curve distribution of the function y=H+I*x / lnx; the electron mobility of the first electron-phonon coupling layer (106a) is g, the electron mobility of the second electron-phonon coupling layer (106b) is h, and the electron mobility of the third electron-phonon coupling layer (106c) is i, wherein: 5≤g≤h≤i≤8000(cm 2 / vs).

4. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The electron affinity energy distribution of the first electron-phonon coupling layer (106a) has a function y=J+K*e x / x 2 The electron affinity energy distribution of the second electron-phonon coupling layer (106b) has a linear function curve distribution; the electron affinity energy distribution of the third electron-phonon coupling layer (106c) has a function y=L+M*sinx / x 2 The first quadrant curve is distributed; the electron affinity of the first electron-phonon coupling layer (106a) is j, the electron affinity of the second electron-phonon coupling layer (106b) is k, and the electron affinity of the third electron-phonon coupling layer (106c) is l, wherein: 0.1≤j≤k≤l≤15 (eV).

5. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The transverse phonon velocity distribution of the first electron-phonon coupling layer (106a) has a function y=N+P*lnx-x+1 curve distribution; the transverse phonon velocity distribution of the second electron-phonon coupling layer (106b) has a linear function curve distribution; the transverse phonon velocity distribution of the third electron-phonon coupling layer (106c) has a function y=Q+R*lnx / e x Curve distribution; the transverse phonon velocity of the first electron-phonon coupling layer (106a) is m, the transverse phonon velocity of the second electron-phonon coupling layer (106b) is n, and the transverse phonon velocity of the third electron-phonon coupling layer (106c) is p, wherein: 5E4≤p≤n≤m≤5E7 (eV).

6. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The polarized optical phonon energy distribution of the first electron-phonon coupling layer (106a) has a function y=S+T*e x / x first quadrant curve distribution; the polarization optical phonon energy distribution of the second electron-phonon coupling layer (106b) has a linear function curve distribution; the polarization optical phonon energy distribution of the third electron-phonon coupling layer (106c) has a function y=U+V*(e x +e -x ) / (e x -e -x ) first quadrant curve distribution; the polarization optical phonon energy of the first electron-phonon coupling layer (106a) is m, the polarization optical phonon energy of the second electron-phonon coupling layer (106b) is n, and the polarization optical phonon energy of the third electron-phonon coupling layer (106c) is p, wherein: 50≤p≤n≤m≤800 (meV).

7. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The electron-phonon coupling layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

8. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The epitaxial structure of a compound semiconductor laser according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, Cu, Mo, TiW, W, CuW, GaN, GaAs, InP, InAs, GaSb, diamond, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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