Preparation method of display panel and display panel

Abstract

The invention relates to a preparation method of a display panel and the display panel. The method comprises the following steps: forming an isolation structure and a first luminescent material layer on one side of a substrate; forming a first packaging layer on one side, far away from the substrate, of the first light-emitting material layer; preparing a patterned first photoresist layer on one side, far away from the first light-emitting material layer, of the first packaging layer; determining whether the pattern of the first photoresist layer comprises a first target pattern, if the pattern of the first photoresist layer does not comprise the first target pattern, performing exposure treatment on the first photoresist layer, and performing development treatment on the exposed first photoresist layer so as to remove the first photoresist layer, the step of preparing a patterned first photoresist layer on the side, away from the first light-emitting material layer, of the first packaging layer is repeatedly executed until it is determined that the pattern of the first photoresist layer comprises a first target pattern; and etching the exposed area outside the first photoresist layer. By adopting the method, the product yield can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a method for preparing a display panel and a display panel. Background Art

[0002] OLED (Organic Light Emitting Diode) display panel is one of the hot topics in the current display panel research field. Compared with liquid crystal display panels, OLED display panels have the advantages of low energy consumption, low cost, self-luminescence, wide viewing angle and fast response speed. In the preparation process of traditional display panels, the light-emitting pixel graphics are usually realized through fine metal mask (FMM). FMM technology is mature and has rich experience in mass production. However, FMM technology also has problems such as limited accuracy, high development cost and long development cycle.

[0003] The non-fine metal mask technology eliminates the limitations of traditional OLED processes on display screen size, resolution and other screen performance, and has the advantages of high performance, full-domain size and agile delivery. Patents CN118251982A, CN116648095A, CN117062489A, CN118742138A, CN118678783A, CN118660598A, CN118675450A, CN118824188A and CN118781966A record the relevant content of the non-fine metal mask technology for reference.

[0004] The preparation of display panels involves multiple process technologies, and photolithography based on yellow light process is one of the key processes. In photolithography, the circuit pattern needs to be accurately transferred through the photoresist layer. If the pattern transfer fails, the residual photoresist needs to be removed.

[0005] In the related art, the photoresist is removed by a stripping solution, however, the stripping solution may corrode other film layers under the photoresist, thereby causing the product to be scrapped and resulting in a serious yield loss. Summary of the invention

[0006] Based on this, it is necessary to provide a method for preparing a display panel and a display panel that can improve product yield in response to the above technical problems.

[0007] In a first aspect, the present application provides a method for preparing a display panel. The method comprises:

[0008] An isolation structure and a first light-emitting material layer are formed on one side of the substrate; the isolation structure encloses a first isolation opening and a second isolation opening, and the first light-emitting material layer is located in the first isolation opening, in the second isolation opening, and on a side of the isolation structure away from the substrate; the first light-emitting material layer located in the first isolation opening constitutes a first light-emitting portion;

[0009] forming a first encapsulation layer on a side of the isolation structure and the first light-emitting material layer away from the substrate;

[0010] A patterned first photoresist layer is prepared on a side of the first encapsulation layer away from the first light-emitting material layer; wherein the first photoresist layer covers the first encapsulation layer at a position corresponding to the first light-emitting portion and at least exposes the first encapsulation layer in the second isolation opening;

[0011] Determining whether the pattern of the first photoresist layer includes the first target pattern, if the pattern of the first photoresist layer does not include the first target pattern, exposing the first photoresist layer, and developing the first photoresist layer after the exposure process to remove the first photoresist layer, and repeatedly performing the step of preparing a patterned first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer until it is determined that the pattern of the first photoresist layer includes the first target pattern;

[0012] The exposed area outside the first photoresist layer is etched to remove the first encapsulation layer and the first light-emitting material layer in the exposed area.

[0013] The method for preparing a display panel provided in an embodiment of the present application, during the process of preparing the display panel, if it is found that the pattern of the first photoresist layer is not the desired first target pattern, the first photoresist layer can be accurately and quickly removed by successively performing exposure treatment and development treatment on the first photoresist layer, so as to re-prepare the first photoresist layer containing the first target pattern, and the exposure treatment and development treatment will not cause corrosion damage to the film layers under the first photoresist layer, such as the first encapsulation layer and the first light-emitting material layer, thereby avoiding serious loss of product yield.

[0014] In one embodiment, the isolation structure further forms a third isolation opening; the method further comprises: forming a second light-emitting material layer on a side of the substrate close to the isolation structure; the second light-emitting material layer is located in the first isolation opening, the second isolation opening, the third isolation opening and a side of the isolation structure away from the substrate; the second light-emitting material layer located in the second isolation opening constitutes a second light-emitting portion; forming a second encapsulation layer on a side of the isolation structure and the second light-emitting material layer away from the substrate; preparing a patterned second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer; wherein the second photoresist layer covers the second encapsulation layer at a position corresponding to the second light-emitting portion and at least exposes Exposing the second encapsulation layer within the first isolation opening and the third isolation opening; determining whether the pattern of the second photoresist layer includes the second target pattern, if the pattern of the second photoresist layer does not include the second target pattern, exposing the second photoresist layer, and developing the exposed second photoresist layer to remove the second photoresist layer, and repeatedly performing the step of preparing a patterned second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer until it is determined that the pattern of the second photoresist layer includes the second target pattern; etching the exposed area outside the second photoresist layer to remove the second encapsulation layer and the second light-emitting material layer in the exposed area.

[0015] In one embodiment, the method further includes: forming a third light-emitting material layer on a side of the substrate close to the isolation structure; the third light-emitting material layer is located in the first isolation opening, the second isolation opening, the third isolation opening, and the side of the isolation structure away from the substrate; the third light-emitting material layer located in the third isolation opening constitutes a third light-emitting portion; forming a third encapsulation layer on a side of the isolation structure and the third light-emitting material layer away from the substrate; preparing a patterned third photoresist layer on a side of the third encapsulation layer away from the third light-emitting material layer; wherein the third photoresist layer covers the third encapsulation layer at a position corresponding to the third light-emitting portion and at least exposes the first isolation opening and the second packaging layer in the second isolation opening; determining whether the pattern of the third photoresist layer includes the third target pattern, if the pattern of the third photoresist layer does not include the third target pattern, exposing the third photoresist layer, and developing the third photoresist layer after the exposure to remove the third photoresist layer, and repeating the step of preparing a patterned third photoresist layer on the side of the third packaging layer away from the third light-emitting material layer until it is determined that the pattern of the third photoresist layer includes the third target pattern; etching the exposed area outside the third photoresist layer to remove the third packaging layer and the third light-emitting material layer in the exposed area.

[0016] In one embodiment, before exposing the first photoresist layer, the method further includes: cleaning the first photoresist layer; optionally, before exposing the second photoresist layer, the method further includes: cleaning the second photoresist layer; optionally, before exposing the third photoresist layer, the method further includes: cleaning the third photoresist layer.

[0017] In one embodiment, the method further includes: if it is determined that the pattern of the first photoresist layer includes the first target pattern, then before etching the exposed area outside the first photoresist layer, hard baking the first photoresist layer; optionally, the method further includes: if it is determined that the pattern of the second photoresist layer includes the second target pattern, then before etching the exposed area outside the second photoresist layer, hard baking the second photoresist layer; optionally, the method further includes: if it is determined that the pattern of the third photoresist layer includes the third target pattern, then before etching the exposed area outside the third photoresist layer, hard baking the third photoresist layer.

[0018] In one embodiment, a first photoresist layer is exposed, and a development process is performed on the first photoresist layer after the exposure process to remove the first photoresist layer, and the step of preparing a patterned first photoresist layer on a side of the first packaging layer away from the first light-emitting material layer is repeated until it is determined that the pattern of the first photoresist layer includes a first target pattern, including: when the first photoresist layer after the exposure process is developed to remove the first photoresist layer, checking whether the first photoresist layer is completely removed; if it is determined that the first photoresist layer is completely removed, based on the yellow light process, repeatedly performing the step of preparing a patterned first photoresist layer on a side of the first packaging layer away from the first light-emitting material layer until it is determined that the pattern of the first photoresist layer includes the first target pattern; optionally, a second photoresist layer is exposed, and a development process is performed on the second photoresist layer after the exposure process to remove the second photoresist layer, and the step of preparing a patterned second photoresist layer on a side of the second packaging layer away from the second light-emitting material layer is repeated until it is determined that the pattern of the second photoresist layer includes a second target pattern, including: when the first photoresist layer after the exposure process is developed to remove the first photoresist layer, checking whether the first photoresist layer is completely removed; if it is determined that the first photoresist layer is completely removed, repeatedly performing the step of preparing a patterned first photoresist layer on a side of the first packaging layer away from the first light-emitting material layer based on the yellow light process until it is determined that the pattern of the first photoresist layer includes the first target pattern. The method comprises: performing a development treatment on the second photoresist layer to remove the second photoresist layer, checking whether the second photoresist layer is completely removed; if it is determined that the second photoresist layer is completely removed, then based on the yellow light process, repeatedly performing the step of preparing a patterned second photoresist layer on a side of the second packaging layer away from the second light-emitting material layer until it is determined that the pattern of the second photoresist layer includes the second target pattern; optionally, performing an exposure treatment on the third photoresist layer, and performing a development treatment on the third photoresist layer after the exposure treatment to remove the third photoresist layer, and repeatedly performing the step of preparing a patterned third photoresist layer on a side of the third packaging layer away from the third light-emitting material layer until it is determined that the pattern of the third photoresist layer includes the third target pattern, including: performing a development treatment on the third photoresist layer after the exposure treatment to remove the third photoresist layer, checking whether the third photoresist layer is completely removed; if it is determined that the third photoresist layer is completely removed, then based on the yellow light process, repeatedly performing the step of preparing a patterned third photoresist layer on a side of the third packaging layer away from the third light-emitting material layer until it is determined that the pattern of the third photoresist layer includes the third target pattern.

[0019] In one embodiment, the method further includes: if it is determined that the first photoresist layer is not completely removed, repeating the steps of cleaning the first photoresist layer, exposing the cleaned first photoresist layer, and developing the exposed first photoresist layer to remove the first photoresist layer; optionally, if it is determined that the second photoresist layer is not completely removed, repeating the steps of cleaning the second photoresist layer, exposing the cleaned second photoresist layer, and developing the exposed second photoresist layer to remove the second photoresist layer; optionally, if it is determined that the third photoresist layer is not completely removed, repeating the steps of cleaning the third photoresist layer, exposing the cleaned third photoresist layer, and developing the exposed third photoresist layer to remove the third photoresist layer.

[0020] In one embodiment, a patterned first photoresist layer is prepared on a side of the first packaging layer away from the first light-emitting material layer, including: preparing an initial first photoresist layer on a side of the first packaging layer away from the first light-emitting material layer; pre-treating the initial first photoresist layer; exposing the pre-treated initial first photoresist layer based on a first mask; and developing the exposed initial first photoresist layer to obtain a patterned first photoresist layer.

[0021] In one embodiment, the initial first photoresist layer is pre-processed, including: drying the initial first photoresist layer; and soft-baking the dried initial first photoresist layer.

[0022] In one embodiment, before preparing the initial first photoresist layer on the side of the first encapsulation layer away from the first light-emitting material layer, the method further includes: cleaning the display panel; and performing a hydrophobic treatment on the cleaned display panel.

[0023] In one of the embodiments, a patterned second photoresist layer is prepared on a side of the second packaging layer away from the second light-emitting material layer, including: preparing an initial second photoresist layer on a side of the second packaging layer away from the second light-emitting material layer; pre-treating the initial second photoresist layer; exposing the pre-treated initial second photoresist layer based on a second mask; and developing the exposed initial second photoresist layer to obtain a patterned second photoresist layer.

[0024] In one of the embodiments, a patterned third photoresist layer is prepared on a side of the third packaging layer away from the third light-emitting material layer, including: preparing an initial third photoresist layer on a side of the third packaging layer away from the third light-emitting material layer; pre-treating the initial third photoresist layer; exposing the pre-treated initial third photoresist layer based on a third mask; and developing the exposed initial third photoresist layer to obtain a patterned third photoresist layer.

[0025] In one embodiment, the method further includes: forming a first electrode layer between the substrate and the first light-emitting material layer.

[0026] In one of the embodiments, the first photoresist layer is a positive photoresist material; optionally, the second photoresist layer is a positive photoresist material; optionally, the third photoresist layer is a positive photoresist material.

[0027] In one embodiment, the first encapsulation layer is a continuous film layer; optionally, the second encapsulation layer is a continuous film layer; optionally, the third encapsulation layer is a continuous film layer.

[0028] In a second aspect, a display panel is provided, which is prepared based on the method of any of the above embodiments.

[0029] The display panel provided in the embodiment of the present application, during the process of preparing the display panel, if it is found that the pattern of the first photoresist layer is not the desired first target pattern, the first photoresist layer can be accurately and quickly removed by successively performing exposure treatment and development treatment on the first photoresist layer, so as to re-prepare the first photoresist layer including the first target pattern, and the exposure treatment and development treatment will not cause corrosion damage to the film layers under the first photoresist layer, such as the first encapsulation layer and the first light-emitting material layer, thereby avoiding serious loss of product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0031] Figure 1 is a schematic flow chart of a method for preparing a display panel in an embodiment;

[0032] Figure 2 is a schematic diagram of a cross-sectional structure of a display panel in one embodiment;

[0033] Figure 3 is a schematic top view of a display panel in one embodiment;

[0034] Figure 4 is a schematic diagram of a cross-sectional structure of another display panel in an embodiment;

[0035] Figure 5 is a schematic diagram of a cross-sectional structure of another display panel in an embodiment;

[0036] Figure 6 A schematic diagram of a process of inspecting a first photoresist layer in one embodiment;

[0037] Figure 7 A schematic diagram of a process for preparing a first photoresist layer in one embodiment;

[0038] Figure 8 A schematic diagram of a process for preparing a first photoresist layer in one embodiment;

[0039] Fig. 9 is a schematic diagram of a cross-sectional structure of another display panel in an embodiment;

[0040] Fig.10 is a schematic diagram of a cross-sectional structure of another display panel in an embodiment;

[0041] Fig.11 FIG. 4 is a schematic top view of another display panel in an embodiment.

[0042] Reference numerals:

[0043] 11. substrate; 12. first electrode layer; 13. isolation structure; 14. first light-emitting material layer; 15. first encapsulation layer; 16. first photoresist layer; 13a. first isolation opening; 13b. second isolation opening; 13c. third isolation opening; 17. second light-emitting material layer; 18. second encapsulation layer; 19. second photoresist layer; 20. third light-emitting material layer; 21. third encapsulation layer; 22. third photoresist layer; 131. first isolation portion; 132. second isolation portion; 131a. first metal layer; 131b. second metal layer. DETAILED DESCRIPTION

[0044] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. It should be understood that many specific details are set forth in the following description to facilitate a full understanding of the present application, but the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0046] It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, they do not represent any order, quantity or importance, but are only used to distinguish different components. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present application, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element. "Include" or "comprising" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0047] In the description of the present application, it should be understood that the terms "thickness", "up", "down", "top", "bottom", "inside", "outside", etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0048] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features.

[0049] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0050] It can be understood that “at least one” means one or more, “plurality” means two or more, and “at least a portion of an element” means a part or all of an element.

[0051] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0052] Display panels are essential components that many electronic devices currently need to use. For example, display technologies such as organic light emitting diodes (OLED) are widely used. In the preparation process of related display panels, the use of photolithography technology is involved. Among them, mainly using photolithography technology to accurately transfer circuit patterns in a photoresist layer, using the pattern to cover part of the area, exposing another part of the area, so that the exposed area can be further processed based on the next process. However, if the pattern transfer fails, it involves the step of removing the residual photoresist.

[0053] In the related art, photoresist is removed by stripping liquid. However, after research, it was found that when stripping photoresist with stripping liquid, a large amount of peeling will be generated in other film layers under the photoresist, and the stripping liquid will also rapidly corrode certain film layers, causing the peeling to continue to extend in the film layer, thus causing the product to be scrapped and causing serious yield loss.

[0054] In order to solve the above problems, the embodiments of the present application provide a method for manufacturing a display panel and a display panel, and each embodiment will be described below in conjunction with the accompanying drawings.

[0055] First, as Figure 1 A method for preparing a display panel provided in an embodiment of the present application is shown. Exemplarily, the display panel may be an OLED display panel, etc., which is not fully illustrated here. The method comprises:

[0056] Step 101: forming an isolation structure and a first light-emitting material layer on one side of a substrate.

[0057] The isolation structure encloses a first isolation opening and a second isolation opening, and the first luminescent material layer is located in the first isolation opening, the second isolation opening and a side of the isolation structure away from the substrate; the first luminescent material layer located in the first isolation opening constitutes a first luminescent portion.

[0058] That is, an isolation structure is provided on the substrate, and a first isolation opening and a second isolation opening are defined by the isolation structure. After the first light-emitting material layer is laid, the first light-emitting material layer in the first isolation opening constitutes a first light-emitting portion.

[0059] A first light-emitting element, a second light-emitting element and a third light-emitting element are usually required to be set in a display panel. For example, the first light-emitting element is a red light-emitting element, the second light-emitting element is a green light-emitting element, and the third light-emitting element is a blue light-emitting element. For ease of understanding, the embodiments of the present application are described using this as an example.

[0060] The correspondence between the plurality of light-emitting elements and the plurality of isolation openings is "many-to-one" or "one-to-one". In the embodiment of the present application, the one-to-one correspondence between the light-emitting elements and the isolation openings is used as an example for explanation. The first light-emitting portion corresponds to the first isolation opening and is disposed in the first isolation opening.

[0061] In an optional embodiment of the present application, the first light-emitting portion may be one of the light-emitting portion of the first light-emitting element, the light-emitting portion of the second light-emitting element, and the light-emitting portion of the third light-emitting element. Correspondingly, the second isolation opening may be used to prepare the second light-emitting portion, and the second light-emitting portion may be another one of the light-emitting portion of the first light-emitting element, the light-emitting portion of the second light-emitting element, and the light-emitting portion of the third light-emitting element. For example, the first light-emitting portion is the light-emitting portion of the red light-emitting element, and the second light-emitting portion is the light-emitting portion of the green light-emitting element.

[0062] In a possible implementation, before forming a first light-emitting material layer on one side of the substrate to prepare a first light-emitting portion in the first isolation opening, a second light-emitting portion has been prepared in the second isolation opening based on a second light-emitting material layer.

[0063] In another possible implementation, after forming a first light-emitting material layer on one side of the substrate to prepare a first light-emitting portion in the first isolation opening, a second light-emitting portion may be prepared in the second isolation opening based on a second light-emitting material layer.

[0064] In an optional embodiment of the present application, other film layers exist between the substrate, the isolation structure and the first light-emitting material layer.

[0065] Exemplarily, the first light-emitting material layer may include a hole transport layer (HTL) (not shown), an emission layer (EML) (not shown), an electron transport layer (ETL) (not shown), a cathode (not shown), etc., which are not fully illustrated here.

[0066] Illustratively, in an optional embodiment, the method further includes: forming a first electrode layer between the substrate and the first light-emitting material layer.

[0067] That is, there is a first electrode layer between the substrate and the first light-emitting material layer.

[0068] Optionally, the first electrode layer is an anode.

[0069] In an optional embodiment of the present application, the substrate may be an array substrate provided with a pixel definition layer.

[0070] In an optional embodiment of the present application, there are other film layers between the substrate and the first electrode layer, such as a planar layer, etc., which are not fully illustrated here.

[0071] Step 102 : forming a first encapsulation layer on a side of the isolation structure and the first light emitting material layer away from the substrate.

[0072] In an optional embodiment of the present application, other film layers may be present between the first light-emitting material layer and the first encapsulation layer, which may be set according to actual needs and are not fully illustrated here.

[0073] Optionally, the first encapsulation layer is an inorganic film layer, such as a CVD1 encapsulation layer (Chemical Vapor Deposition). By forming the first encapsulation layer, water vapor and oxygen are prevented from penetrating, and the first luminescent material layer is protected, thereby ensuring the preparation quality of the display panel.

[0074] Optionally, the first encapsulation layer is a continuous film layer.

[0075] Step 103 : preparing a patterned first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer.

[0076] In the etching process, the first photoresist layer can mainly serve as a protective layer to cover the areas that need to be retained to prevent these areas from being eroded by the etching solution or plasma, while the areas not covered by the first photoresist layer will be etched away to form the desired graphic structure. In this way, the etched areas can continue to be used to prepare other components based on other processes.

[0077] In an embodiment of the present application, a patterned first photoresist layer is prepared to cover the first encapsulation layer corresponding to the first light-emitting portion, and the first encapsulation layer in the second isolation opening is exposed, so that the first encapsulation layer and the first light-emitting material layer in the second isolation opening can be etched. In this way, if the second light-emitting portion has not been prepared in the second isolation opening, the second light-emitting portion can continue to be prepared in the second isolation opening.

[0078] Based on this, in a possible implementation, the display panel provided in the embodiment of the present application includes a substrate 11, a first electrode layer 12, an isolation structure 13, a first light-emitting material layer 14, a first encapsulation layer 15 and a first photoresist layer 16. The isolation structure encloses a first isolation opening 13a and a second isolation opening 13b.

[0079] For ease of understanding, take this as an example. Figure 2 A schematic diagram of the cross-sectional structure of a display panel is exemplarily shown. It can be understood that the example here is taken that the first light-emitting portion is formed in the first isolation opening 13a based on the first light-emitting material layer 14 and the second light-emitting portion has not yet been formed in the second isolation opening 13b.

[0080] It can be understood that, as mentioned above, the first light emitting material layer 14 located in the first isolation opening 13 a constitutes the first light emitting portion, so the position of the first isolation opening 13 a is the position of the first light emitting portion.

[0081] It should be noted that the embodiment of the present application does not specifically limit the thickness of the first photoresist layer 16 .

[0082] In addition, if Figure 2 As shown, the partial cross-sectional structure of the isolation structure 13 is an undercut structure, and further, it may be an I-shaped structure, etc., which are not fully exemplified here.

[0083] like Figure 2 As shown, the isolation structure 13 includes a first isolation portion 131 and a second isolation portion 132 stacked in a direction away from the substrate 11 , and the orthographic projection of the second isolation portion 132 on the substrate 11 covers the orthographic projection of the first isolation portion 131 on the substrate 11 .

[0084] Optionally, the first isolation portion 131 includes a conductive material.

[0085] Optionally, the first isolation portion 131 includes at least one metal layer.

[0086] Optionally, the first isolation portion 131 includes a first metal layer 131 a and a second metal layer 131 b stacked in a direction away from the substrate 11 , and an orthographic projection of the first metal layer 131 a on the substrate 11 covers an orthographic projection of the second metal layer 131 b on the substrate 11 .

[0087] Optionally, the material of the second isolation portion 132 includes titanium or molybdenum; the material of the first metal layer 131 a includes molybdenum or titanium; and the material of the second metal layer 131 b includes aluminum or copper or silver.

[0088] In the present application embodiment, Figure 2As shown, the patterned first photoresist layer 16 covers the first encapsulation layer 15 at a position corresponding to the first light-emitting portion, and at least exposes the first encapsulation layer 15 in the second isolation opening 13b. Figure 3 It also shows Figure 2 It is understood that there may be a plurality of first isolation openings 13a and a plurality of second isolation openings 13b in the display panel. Figure 3 For example purposes only.

[0089] In an optional embodiment of the present application, in addition to exposing the first encapsulation layer 15 in the second isolation opening 13b, the first photoresist layer 16 may also expose the first encapsulation layer 15 at other locations of the display panel, such as exposing the first encapsulation layer 15 on the isolation structure 13, etc., which are not fully illustrated here.

[0090] In an optional embodiment of the present application, other film layers may exist between the first encapsulation layer 15 and the first photoresist layer 16 , which are not fully illustrated here.

[0091] Step 104, determining whether the pattern of the first photoresist layer 16 includes the first target pattern. If the pattern of the first photoresist layer 16 does not include the first target pattern, exposing the first photoresist layer 16, and developing the first photoresist layer 16 after the exposure to remove the first photoresist layer 16, and repeating the step of preparing a patterned first photoresist layer 16 on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14 until it is determined that the pattern of the first photoresist layer 16 includes the first target pattern.

[0092] In an optional embodiment of the present application, the pattern of the first photoresist layer includes the first target pattern, which may refer to that the pattern of the first photoresist layer includes the first target pattern. The pattern of the first photoresist layer does not include the first target pattern, which may refer to that the pattern of the first photoresist layer is not completely consistent with the first target pattern, for example, only a portion of the pattern of the first photoresist layer is consistent with a portion of the first target pattern, or the pattern of the first photoresist layer is completely inconsistent with the first target pattern.

[0093] In an optional embodiment of the present application, the pattern formed by the area covered by the first photoresist layer 16 is the pattern of the first photoresist layer 16. The first target pattern can be predetermined, and the first target pattern is used to indicate the target area that the first photoresist layer 16 needs to cover.

[0094] If the pattern of the first photoresist layer 16 does not include the first target pattern, it means that the target area is not fully formed at present, or the covered area is different from the target area, and etching based on this will lead to etching errors. Therefore, it is necessary to remove the first photoresist layer 16 and re-prepare the first photoresist layer 16 on the side of the first encapsulation layer 15 away from the light-emitting material layer until the first photoresist layer 16 including the first target pattern is prepared, so as to ensure the correct position of subsequent etching.

[0095] In the related art, the first photoresist layer 16 is prepared after coating, exposure, development and baking, and it is determined whether the pattern of the prepared photoresist layer is correct. Based on this fixed process, a stripping liquid must be used to effectively remove the photoresist layer with an incorrect pattern, otherwise the photoresist layer cannot be removed, resulting in a long preparation process of the display panel and a reduced product yield.

[0096] After a large number of experiments, it is found that the process of the existing photolithography technology can be skipped, and before baking, it is determined whether the pattern of the first photoresist layer 16 includes the first target pattern. If it does not include it, since the photoresist itself in the first photoresist layer 16 still has photosensitivity at this time, the entire first photoresist layer 16 can be removed by exposure treatment and development treatment without performing other additional treatments on the first photoresist layer 16. The exposure treatment and development treatment used here will not cause damage to other film layers such as the first encapsulation layer 15 under the first photoresist layer 16. In this way, the display panel after removing the first photoresist layer 16 is still normal, so that the first photoresist layer 16 can be re-prepared.

[0097] Specifically, since the pattern of the first photoresist layer 16 does not include the first target pattern, the entire first photoresist layer 16 needs to be removed, so the first photoresist layer 16 can be uniformly exposed. Since no area division is required, the exposure process can be performed quickly to ensure the efficiency of the photoresist removal process.

[0098] Optionally, an edge exposure machine may be used to perform exposure processing on the entire surface of the first photoresist layer 16 .

[0099] Optionally, the entire surface of the first photoresist layer 16 may be exposed at the same time, or each region of the first photoresist layer 16 may be exposed in a time-division manner.

[0100] In an optional embodiment of the present application, the first photoresist layer 16 is a positive photoresist material, wherein the positive photoresist material generates soluble substances due to chemical reaction after being exposed, which can be dissolved and removed by a developer, and will not be dissolved and removed by a developer if not exposed.

[0101] Optionally, the development process is to spray a developing solution onto the exposed first photoresist layer 16 .

[0102] Among them, during the patterning process of the first photoresist layer 16, the retained photoresist in the area covering the first light-emitting portion can continue to undergo photosensitivity reaction. In the embodiment of the present application, the photosensitivity characteristics of the photoresist layer are effectively utilized, and it is exposed and then developed, thereby efficiently removing the first photoresist layer 16 without causing damage to other film layers.

[0103] Step 105 , etching the exposed area outside the first photoresist layer 16 to remove the first encapsulation layer 15 and the first light-emitting material layer 14 in the exposed area.

[0104] For example, Figure 4 As shown, the second isolation opening 13b does not need to have the first light-emitting portion, so the second isolation opening 13b and other areas are exposed areas. After etching, the first encapsulation layer 15 and the first light-emitting material layer 14 in the exposed areas are removed.

[0105] It is understandable that, in addition to covering the first encapsulation layer 15 at a position corresponding to the first light-emitting portion, the first photoresist layer 16 may also cover the first encapsulation layer 15 in other areas according to the preparation requirements of the display panel, for example, Figure 2 , the first photoresist layer 16 also covers a portion of the isolation structure, which is not fully illustrated here.

[0106] In an optional embodiment of the present application, the method further includes removing the first photoresist layer 16 after removing the first encapsulation layer 15 and the first light-emitting material layer 14 in the exposed area. In this way, the second light-emitting portion can be prepared. For specific steps, refer to the description of the second light-emitting portion below. Figure 5 FIG. 1 is a schematic diagram showing a cross-sectional structure of the display panel after the first photoresist layer 16 is removed.

[0107] The manufacturing method and display panel of the display panel are as follows: an isolation structure 13 and a first light-emitting material layer 14 are formed on one side of a substrate 11; the isolation structure 13 encloses a first isolation opening 13a and a second isolation opening 13b, and the first light-emitting material layer 14 is located in the first isolation opening 13a, in the second isolation opening 13b, and on the side of the isolation structure 13 away from the substrate 11; the first light-emitting material layer 14 located in the first isolation opening 13a constitutes a first light-emitting portion; a first encapsulation layer 15 is formed on the side of the isolation structure 13 and the first light-emitting material layer 14 away from the substrate 11; a patterned first photoresist layer 16 is prepared on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14; wherein the first photoresist layer 16 covers the position corresponding to the first light-emitting portion The first encapsulation layer 15 is exposed, and at least the first encapsulation layer 15 in the second isolation opening 13b is exposed; whether the pattern of the first photoresist layer 16 includes the first target pattern, if the pattern of the first photoresist layer 16 does not include the first target pattern, the first photoresist layer 16 is exposed, and the first photoresist layer 16 after the exposure is developed to remove the first photoresist layer 16, and the step of preparing a patterned first photoresist layer 16 on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14 is repeated until it is determined that the pattern of the first photoresist layer 16 includes the first target pattern; the exposed area of ​​the first photoresist layer 16 is etched to remove the first encapsulation layer 15 and the first light-emitting material layer 14 in the exposed area. In this way, in the process of preparing the display panel, if it is found that the pattern of the first photoresist layer 16 is not the desired first target pattern, the first photoresist layer 16 can be removed accurately and quickly by successively performing exposure treatment and development treatment on the first photoresist layer 16, so as to re-prepare the first photoresist layer 16 containing the first target pattern, and the exposure treatment and development treatment will not cause corrosion damage to the film layers under the first photoresist layer 16, such as the first encapsulation layer 15 and the first light-emitting material layer 14, thereby avoiding serious loss of product yield.

[0108] In one embodiment, before performing an exposure process on the first photoresist layer 16 , the method further includes: performing a cleaning process on the first photoresist layer 16 .

[0109] Among them, considering that after the patterned first photoresist layer 16 is prepared, there may be foreign matter on the first photoresist layer 16, during the exposure process, the area covered by the foreign matter may not be exposed, so that the part will not be removed after the development process. Therefore, in order to ensure that the first photoresist layer 16 can be removed at one time, improve the removal success rate and ensure the comprehensiveness of the removal, before the exposure process, the first photoresist layer 16 is cleaned to remove the foreign matter.

[0110] Based on this, it can be seen that in an embodiment of the present application, when it is determined that the pattern of the first photoresist layer 16 is inconsistent with the first target pattern, the step of removing the first photoresist layer 16 includes: cleaning the first photoresist layer 16; exposing the first photoresist layer 16 after the cleaning treatment; and developing the first photoresist layer 16 after the exposure treatment.

[0111] In one embodiment, Figure 6 The schematic diagram of the process of inspecting the first photoresist layer 16 is shown. The first photoresist layer 16 is exposed, and the first photoresist layer 16 after the exposure is developed to remove the first photoresist layer 16, and the step of preparing a patterned first photoresist layer 16 on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14 is repeated until it is determined that the pattern of the first photoresist layer 16 includes a first target pattern, including:

[0112] Step 601 , after developing the first photoresist layer 16 after the exposure process to remove the first photoresist layer 16 , check whether the first photoresist layer 16 is completely removed.

[0113] If there is no residual photoresist on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14 , it is determined that the first photoresist layer 16 is completely removed.

[0114] Step 602, if it is determined that the first photoresist layer 16 is completely removed, then based on the yellow light process, repeatedly perform the step of preparing a patterned first photoresist layer 16 on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14 until it is determined that the pattern of the first photoresist layer 16 includes the first target pattern.

[0115] If the first photoresist layer 16 is completely removed, it is necessary to re-prepare the patterned first photoresist layer 16 and continue to determine whether the pattern in the prepared first photoresist layer 16 includes the first target pattern, until it is determined that the pattern of the first photoresist layer 16 includes the first target pattern, so as to continue to etch the exposed area of ​​the first photoresist layer 16 to remove the first encapsulation layer 15 and the first light-emitting material layer 14 in the exposed area.

[0116] Step 603, if it is determined that the first photoresist layer 16 is not completely removed, repeat the steps of cleaning the first photoresist layer 16, exposing the cleaned first photoresist layer 16, and developing the exposed first photoresist layer 16 to remove the first photoresist layer 16.

[0117] In this way, the remaining first photoresist layer 16 can continue to be removed.

[0118] In the embodiment of the present application, the residual photoresist can be found and removed in time through integrity inspection, avoiding repeated rework or product scrapping caused by residual photoresist. Through strict quality control, the photoresist can be completely removed to protect the substrate material, which can reduce the defects caused by residual photoresist, thereby improving the overall yield of the product.

[0119] In one embodiment, the method further includes: if it is determined that the pattern of the first photoresist layer 16 includes the first target pattern, before etching the exposed region of the first photoresist layer 16 , performing a hard baking process on the first photoresist layer 16 .

[0120] That is, when it is determined that the pattern of a photoresist layer includes the first target pattern, the currently formed patterned first photoresist layer 16 is hard-baked first, and then the exposed area of ​​the first photoresist layer 16 after the hard-baking is etched.

[0121] In this way, before hard baking, it is determined whether the pattern of the first photoresist layer 16 includes the first target pattern, and the first photoresist layer 16 is removed in time through exposure and development, thereby avoiding volatilization of the photoinitiator in the photoresist due to hard baking, and ensuring the removal of the entire surface of the first photoresist layer 16. In addition, since no hard baking is performed, the removal of the first photoresist layer 16 becomes easier, thereby improving the comprehensiveness of the removal of the first photoresist layer 16.

[0122] In one embodiment, Figure 7 The schematic diagram of the process of preparing the first photoresist layer 16 is shown. The patterned first photoresist layer 16 is prepared on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14, including:

[0123] Step 701 : preparing an initial first photoresist layer 16 on a side of the first encapsulation layer 15 away from the first light-emitting material layer 14 .

[0124] In an optional embodiment of the present application, before preparing the initial first photoresist layer 16 on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14 , the method further includes: cleaning the display panel; and performing a hydrophobic treatment on the cleaned display panel.

[0125] For example, hexamethyldisilazane (HMDS) may be used to perform surface treatment on the cleaned first encapsulation layer 15 to achieve hydrophobic treatment, thereby improving the adhesion of the photoresist.

[0126] In this way, foreign matter on the surface of the first encapsulation layer 15 can be removed by cleaning to prevent the foreign matter from affecting the preparation of the first photoresist layer 16. In addition, the hydrophobic treatment can improve the coating uniformity of the photoresist, thereby helping to reduce problems such as bubbles and uneven thickness during the photoresist coating process, thereby improving the photolithography quality.

[0127] Step 702 , pre-treating the initial first photoresist layer 16 .

[0128] The pretreatment is used to improve the adhesion of the initial first photoresist layer 16 .

[0129] Optionally, pre-processing comprises multiple processing steps.

[0130] Exemplarily, the pre-treatment of the initial first photoresist layer 16 includes: drying the initial first photoresist layer 16; and soft-baking the dried initial first photoresist layer 16.

[0131] The drying process can remove the solvent in the photoresist and gradually transform the photoresist from liquid to solid. The dried photoresist can better adhere to the substrate and reduce defects caused by residual solvent. Furthermore, by heating the soft bake, the solvent in the photoresist is volatilized and the solvent content is reduced, which can enhance the adhesion between the photoresist and the substrate, ensure that the photoresist will not peel off in the subsequent process, and can relieve the film stress formed by the photoresist during the coating process to avoid pattern deformation caused by stress.

[0132] Step 703 : performing exposure processing on the pre-processed initial first photoresist layer 16 based on the first mask.

[0133] Step 704 , developing the initial first photoresist layer 16 after the exposure process to obtain a patterned first photoresist layer 16 .

[0134] Exemplarily, if the initial first photoresist layer 16 is a positive photoresist material, the first mask covers the first photoresist layer 16, the covered area of ​​the first photoresist layer 16 can be exposed, the uncovered area of ​​the first photoresist layer 16 is not exposed, and the exposed area is removed after development, thereby forming a patterned first photoresist layer 16.

[0135] It can be understood that since the first photoresist layer 16 covers the first packaging layer 15 at a position corresponding to the first light-emitting portion and at least exposes the first packaging layer 15 within the second isolation opening 13b, step 703 is to expose the area in the first photoresist layer 16 corresponding to the second isolation opening 13b so as to remove the photoresist in the area after the development process for subsequent etching process.

[0136] Based on the above description, it can be seen that in a possible implementation, the process of preparing the first photoresist layer 16 is as follows: Figure 8As shown, when the first photoresist layer 16 is prepared for the first time, the display panel on which the first encapsulation layer 15 has been prepared is first cleaned, and after the cleaning, a hydrophobic treatment is performed using HMDS, and after the hydrophobic treatment, an initial first photoresist layer 16 is coated on the side of the first encapsulation layer 15 away from the first light-emitting material layer 14, and a vacuum drying (Vacuum Drying, VCD) treatment is performed on the initial first photoresist layer 16, and a soft baking treatment is performed after the drying treatment, and then an exposure treatment (Exposure, EXP) is continued, and an edge exposure treatment is performed after the exposure treatment, and then a development treatment (DEV1) is performed, at this time a patterned first photoresist layer 16 is formed, and then it is checked whether the pattern of the first photoresist layer 16 is the first target pattern. If so, the first photoresist layer 16 is hard-baked in order to proceed to the next process (such as etching); if not, the first photoresist layer 16 is cleaned and subjected to full-surface exposure, and then the first photoresist layer 16 after exposure is developed (DEV2) to check whether there is residual photoresist, and if there is no residual photoresist, the display panel on which the first encapsulation layer 15 has been prepared is continuously cleaned until the first photoresist layer 16 containing the first target pattern is prepared.

[0137] As mentioned above, a second light-emitting portion needs to be prepared. This is exemplified below.

[0138] In one embodiment, the method for preparing the display panel further includes: forming a second light-emitting material layer on a side of the substrate 11 close to the isolation structure 13; the second light-emitting material layer is located in the first isolation opening 13a, the second isolation opening 13b, the third isolation opening and the side of the isolation structure 13 away from the substrate 11; the second light-emitting material layer located in the second isolation opening 13b constitutes a second light-emitting portion; forming a second encapsulation layer on a side of the isolation structure 13 and the second light-emitting material layer away from the substrate 11; preparing a patterned second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer; wherein the second photoresist layer The photoresist layer covers the second packaging layer at a position corresponding to the second light-emitting portion, and at least exposes the second packaging layer in the first isolation opening 13a and the third isolation opening; determines whether the pattern of the second photoresist layer includes the second target pattern, and if the pattern of the second photoresist layer does not include the second target pattern, exposes the second photoresist layer, and develops the exposed second photoresist layer to remove the second photoresist layer, and repeats the step of preparing a patterned second photoresist layer on a side of the second packaging layer away from the second light-emitting material layer until it is determined that the pattern of the second photoresist layer includes the second target pattern.

[0139] A third light-emitting material layer is formed on a side of the substrate 11 close to the isolation structure 13; the third light-emitting material layer is located in the first isolation opening 13a, the second isolation opening 13b, the third isolation opening and the side of the isolation structure 13 away from the substrate 11; the third light-emitting material layer located in the third isolation opening constitutes a third light-emitting portion; a third encapsulation layer is formed on a side of the isolation structure 13 and the third light-emitting material layer away from the substrate 11; a patterned third photoresist layer is prepared on a side of the third encapsulation layer away from the third light-emitting material layer; wherein the third photoresist layer covers the third encapsulation layer at a position corresponding to the third light-emitting portion and at least exposes the second encapsulation layer in the first isolation opening 13a and the second isolation opening 13b; it is determined whether the pattern of the third photoresist layer includes a third target pattern, if the pattern of the third photoresist layer does not include the third target pattern, the third photoresist layer is exposed, and the third photoresist layer after the exposure is developed to remove the third photoresist layer, and the step of preparing a patterned third photoresist layer on a side of the third encapsulation layer away from the third light-emitting material layer is repeated until it is determined that the pattern of the third photoresist layer includes the third target pattern.

[0140] For example, please refer to Fig. 9 and Fig.10 Another schematic diagram of the cross-sectional structure of a display panel is shown, where the isolation structure 13 also surrounds a third isolation opening 13c. In the process of preparing the second light-emitting portion of the display panel, a second light-emitting material layer 17, a second encapsulation layer 18, and a second photoresist layer 19 are formed. In the process of preparing the third light-emitting portion of the display panel, a third light-emitting material layer 20, a third encapsulation layer 21, and a third photoresist layer 22 are formed.

[0141] Among them, as mentioned above, the display panel usually needs to be provided with a first light-emitting element, a second light-emitting element and a third light-emitting element. The first light-emitting portion can be one of the light-emitting portion of the first light-emitting element, the light-emitting portion of the second light-emitting element and the light-emitting portion of the third light-emitting element. Correspondingly, the second isolation opening 13b can be used to prepare the second light-emitting portion, and the second light-emitting portion can be another one of the light-emitting portion of the first light-emitting element, the light-emitting portion of the second light-emitting element and the light-emitting portion of the third light-emitting element. Correspondingly, the third isolation opening 13c can be used to prepare the third light-emitting portion, and the third light-emitting portion is the last one of the light-emitting portion of the first light-emitting element, the light-emitting portion of the second light-emitting element and the light-emitting portion of the third light-emitting element. For example, the first light-emitting portion is the light-emitting portion of the red light-emitting element, the second light-emitting portion is the light-emitting portion of the green light-emitting element, and the third light-emitting portion is the light-emitting portion of the blue light-emitting element.

[0142] In a possible implementation, the first light-emitting material layer 14 is first prepared to form a first light-emitting portion in the first isolation opening 13a, wherein in the process of preparing the first light-emitting portion, the first light-emitting material layer 14 and the first encapsulation layer 15 not only cover the first isolation opening 13a, the second isolation opening 13b and the third isolation opening 13c, but also cover the isolation structure 13. Further, after removing the first encapsulation layer 15 and the first light-emitting material layer 14 in the exposed area of ​​the first photoresist layer 16 (at least including the corresponding area in the second isolation opening 13b and the third isolation opening 13c), the first photoresist layer 16 is removed. Then, the second light-emitting material layer 17 is continuously prepared to form a second light-emitting portion in the second isolation opening 13b, wherein in the process of preparing the second light-emitting portion, the second light-emitting material layer 17 and the second encapsulation layer 18 not only cover the first isolation opening 13a, the second isolation opening 13b and the third isolation opening 13c, but also cover the isolation structure 13. Further, after removing the second encapsulation layer 18 and the second light-emitting material layer 17 in the exposed area of ​​the second photoresist layer 19 (at least including the area corresponding to the first isolation opening 13a and the third isolation opening 13c), the second photoresist layer 19 is removed. Then, the third light-emitting material layer 20 is prepared to form a third light-emitting portion in the third isolation opening 13c, wherein, in the process of preparing the third light-emitting portion, the third light-emitting material layer 20 and the third encapsulation layer 21 not only cover the first isolation opening 13a, the second isolation opening 13b and the third isolation opening 13c, but also cover the isolation structure 13. Further, after removing the third encapsulation layer 21 and the third light-emitting material layer 20 in the exposed area of ​​the third photoresist layer 22 (at least including the area corresponding to the first isolation opening 13a and the second isolation opening 13b), the third photoresist layer 22 is removed.

[0143] For example, Fig. 9 In the display panel shown, when the pattern of the prepared second photoresist layer 19 includes the second target pattern, the exposed area of ​​the second photoresist layer 19 is etched. At this time, the second light-emitting material layer 17 and the second encapsulation layer 18 at the position corresponding to the first light-emitting portion in the first isolation opening 13a and the position where the third light-emitting portion is to be prepared in the third isolation opening 13c have been etched. At this time, the first light-emitting portion and the second light-emitting portion are formed and encapsulated. Similarly, if Fig.10 In the display panel shown, when the pattern of the prepared third photoresist layer 22 includes the third target pattern, the exposed area of ​​the third photoresist layer 22 is etched. At this time, the third light-emitting material layer 20 and the third encapsulation layer 21 at the position corresponding to the first light-emitting portion in the first isolation opening 13a and the position corresponding to the second light-emitting portion in the second isolation opening 13b have been etched. At this time, the first light-emitting portion, the second light-emitting portion and the third light-emitting portion are formed and encapsulated. For ease of understanding, as shown in FIG. Fig.11 Shows Fig.10 A schematic top view of the corresponding display panel.

[0144] Understandably, Fig. 9 and Fig.10 Only a single first isolation opening 13 a , a single second isolation opening 13 b and a single third isolation opening 13 c are taken as examples, and corresponding light-emitting portions are also prepared in other isolation openings based on the same.

[0145] In an optional embodiment of the present application, the first encapsulation layer 15 , the second encapsulation layer 18 and the third encapsulation layer 21 may all be inorganic film layers, and the material composition may be the same.

[0146] In a possible implementation, the second isolation opening 13b is located between the first isolation opening 13a and the third isolation opening 13c. Of course, the relative positions of the isolation openings may also be other implementations, which are not specifically limited here.

[0147] In an optional embodiment of the present application, the photoresist material used in the first photoresist layer 16 , the second photoresist layer 19 and the third photoresist layer 22 may be the same.

[0148] Optionally, the second photoresist layer 19 is a positive photoresist material.

[0149] In one embodiment, the exposed region of the second photoresist layer 19 is etched to remove the second encapsulation layer 18 and the second light emitting material layer 17 in the exposed region.

[0150] In one embodiment, before performing the exposure process on the second photoresist layer 19 , the method further includes: performing a cleaning process on the second photoresist layer 19 .

[0151] In one embodiment, the second photoresist layer 19 is exposed, and the second photoresist layer 19 after the exposure is developed to remove the second photoresist layer 19, and the step of preparing a patterned second photoresist layer 19 on the side of the second encapsulation layer 18 away from the second light-emitting material layer 17 is repeated until it is determined that the pattern of the second photoresist layer 19 includes the second target pattern, including: when the second photoresist layer 19 after the exposure is developed to remove the second photoresist layer 19, checking whether the second photoresist layer 19 is completely removed; if it is determined that If the second photoresist layer 19 is completely removed, based on the yellow light process, the step of preparing a patterned second photoresist layer 19 on the side of the second encapsulation layer 18 away from the second light-emitting material layer 17 is repeated until it is determined that the pattern of the second photoresist layer 19 includes the second target pattern; optionally, if it is determined that the second photoresist layer 19 is not completely removed, the step of cleaning the second photoresist layer 19, exposing the cleaned second photoresist layer 19, and developing the exposed second photoresist layer 19 is repeated to remove the second photoresist layer 19.

[0152] In one embodiment, the method further includes: if it is determined that the pattern of the second photoresist layer 19 includes the second target pattern, before etching the exposed area of ​​the second photoresist layer 19 , hard baking the second photoresist layer 19 .

[0153] In one embodiment, a patterned second photoresist layer 19 is prepared on a side of the second encapsulation layer 18 away from the second light-emitting material layer 17, including: preparing an initial second photoresist layer 19 on a side of the second encapsulation layer 18 away from the second light-emitting material layer 17; pre-treating the initial second photoresist layer 19; exposing the pre-treated initial second photoresist layer 19 based on a second mask; and developing the exposed initial second photoresist layer 19 to obtain a patterned second photoresist layer 19.

[0154] In one embodiment, the initial second photoresist layer 19 is pre-treated, including: drying the initial second photoresist layer 19; and soft-baking the dried initial second photoresist layer 19.

[0155] In one embodiment, before preparing the initial second photoresist layer 19 on the side of the second encapsulation layer 18 away from the second light-emitting material layer 17 , the method further includes: cleaning the display panel; and performing a hydrophobic treatment on the cleaned display panel.

[0156] Among them, other descriptions about the second encapsulation layer 18 are similar to the above description of the first encapsulation layer 15, other descriptions about the second light-emitting material layer 17 are similar to the above description of the first light-emitting material layer 14, and other descriptions about the second photoresist layer 19 are similar to the above description of the first photoresist layer 16, and will not be repeated here.

[0157] In one embodiment, the third photoresist layer 22 is a positive photoresist material.

[0158] In one embodiment, the method further includes: etching the exposed area of ​​the third photoresist layer 22 to remove the third encapsulation layer 21 and the third light-emitting material layer 20 in the exposed area.

[0159] In one embodiment, before performing the exposure process on the third photoresist layer 22 , the method further includes: performing a cleaning process on the third photoresist layer 22 .

[0160] In one embodiment, the third photoresist layer 22 is exposed, and the third photoresist layer 22 after the exposure is developed to remove the third photoresist layer 22, and the step of preparing a patterned third photoresist layer 22 on the side of the third encapsulation layer 21 away from the third light-emitting material layer 20 is repeated until it is determined that the pattern of the third photoresist layer 22 includes a third target pattern, including: when the third photoresist layer 22 after the exposure is developed to remove the third photoresist layer 22, checking whether the third photoresist layer 22 is completely removed; if it is determined that the third photoresist layer 22 is completely removed, then based on the yellow light process, repeating the step of preparing a patterned third photoresist layer 22 on the side of the third encapsulation layer 21 away from the third light-emitting material layer 20 until it is determined that the pattern of the third photoresist layer 22 includes the third target pattern.

[0161] In one embodiment, if it is determined that the third photoresist layer 22 is not completely removed, the steps of cleaning the third photoresist layer 22, exposing the cleaned third photoresist layer 22, and developing the exposed third photoresist layer 22 are repeated to remove the third photoresist layer 22.

[0162] In one embodiment, the method further includes: if it is determined that the pattern of the third photoresist layer 22 includes the third target pattern, before etching the exposed region of the third photoresist layer 22 , hard baking the third photoresist layer 22 .

[0163] In one embodiment, a patterned third photoresist layer 22 is prepared on a side of the third encapsulation layer 21 away from the third light-emitting material layer 20, including: preparing an initial third photoresist layer 22 on a side of the third encapsulation layer 21 away from the third light-emitting material layer 20; pre-treating the initial third photoresist layer 22; exposing the pre-treated initial third photoresist layer 22 based on a third mask; and developing the exposed initial third photoresist layer 22 to obtain a patterned third photoresist layer 22.

[0164] Optionally, the first mask, the second mask and the third mask are different.

[0165] In one embodiment, the initial second photoresist layer 19 is pre-treated, including: drying the initial second photoresist layer 19; and soft-baking the dried initial second photoresist layer 19.

[0166] In one embodiment, before preparing the initial second photoresist layer 19 on the side of the second encapsulation layer 18 away from the second light-emitting material layer 17 , the method further includes: cleaning the display panel; and performing a hydrophobic treatment on the cleaned display panel.

[0167] In one embodiment, the second encapsulation layer is a continuous film layer.

[0168] In one embodiment, the third encapsulation layer is a continuous film layer.

[0169] Optionally, the first encapsulation layer, the second encapsulation layer and the third encapsulation layer are connected to form a continuous encapsulation film layer as a whole, such as the CVD1 encapsulation layer mentioned above. After the third light-emitting portion is prepared, the encapsulation film layer protects each light-emitting material layer.

[0170] Among them, other descriptions about the third encapsulation layer are similar to the description of the first encapsulation layer above, other descriptions about the third light-emitting material layer are similar to the description of the first light-emitting material layer above, and other descriptions about the third photoresist layer are similar to the description of the first photoresist layer above, and will not be repeated here.

[0171] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0172] In a second aspect, an embodiment of the present application further provides a display panel, which is prepared based on the method for preparing a display panel described in any of the above embodiments.

[0173] In a third aspect, an embodiment of the present application further provides a display panel, which is prepared based on the method of any of the above embodiments, and the display panel includes: a substrate, an isolation structure, a first light-emitting material layer, a first encapsulation layer, and a first photoresist layer. The isolation structure and the first light-emitting material layer are located on one side of the substrate; the isolation structure encloses a first isolation opening and a second isolation opening, and the first light-emitting material layer is located in the first isolation opening, in the second isolation opening, and on the side of the isolation structure away from the substrate; the first light-emitting material layer located in the first isolation opening constitutes a first light-emitting portion; the first encapsulation layer is located on the side of the isolation structure and the first light-emitting material layer away from the substrate; the patterned first photoresist layer is located on the side of the first encapsulation layer away from the first light-emitting material layer; wherein the first photoresist layer covers the first encapsulation layer at a position corresponding to the first light-emitting portion, and at least exposes the first encapsulation layer in the second isolation opening.

[0174] It should be noted that the first photoresist layer is used in the preparation process of the display panel. After use, the first photoresist layer will be removed, and the display panel finally formed does not include the first photoresist layer.

[0175] In addition, the implementation solution provided by the display panel to solve the problem is similar to the implementation solution recorded in the above method. Therefore, the specific limitations in one or more display panel embodiments provided can refer to the limitations on the display panel preparation method above and will not be repeated here.

[0176] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0177] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for preparing a display panel, characterized in that: The method comprises: An isolation structure and a first light-emitting material layer are formed on one side of the substrate; the isolation structure encloses a first isolation opening and a second isolation opening, the first light-emitting material layer is located in the first isolation opening, in the second isolation opening, and on a side of the isolation structure away from the substrate; the first light-emitting material layer located in the first isolation opening constitutes a first light-emitting portion; forming a first encapsulation layer on a side of the isolation structure and the first light-emitting material layer away from the substrate; A patterned first photoresist layer is prepared on a side of the first encapsulation layer away from the first light-emitting material layer; wherein the first photoresist layer covers the first encapsulation layer at a position corresponding to the first light-emitting portion and exposes at least the first encapsulation layer in the second isolation opening; Determining whether the pattern of the first photoresist layer includes a first target pattern, and if the pattern of the first photoresist layer does not include the first target pattern, exposing the first photoresist layer, and developing the first photoresist layer after the exposure process to remove the first photoresist layer, and repeatedly performing the step of preparing a patterned first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer until it is determined that the pattern of the first photoresist layer includes the first target pattern; The exposed area outside the first photoresist layer is etched to remove the first encapsulation layer and the first light-emitting material layer in the exposed area.

2. The method according to claim 1, characterized in that: The isolation structure further encloses a third isolation opening; and the method further comprises: A second light-emitting material layer is formed on a side of the substrate close to the isolation structure; the second light-emitting material layer is located in the first isolation opening, the second isolation opening, the third isolation opening, and a side of the isolation structure away from the substrate; the second light-emitting material layer located in the second isolation opening constitutes a second light-emitting portion; forming a second encapsulation layer on a side of the isolation structure and the second light-emitting material layer away from the substrate; A patterned second photoresist layer is prepared on a side of the second encapsulation layer away from the second light-emitting material layer; wherein the second photoresist layer covers the second encapsulation layer at a position corresponding to the second light-emitting portion and exposes at least the second encapsulation layer in the first isolation opening and the third isolation opening; Determining whether the pattern of the second photoresist layer includes a second target pattern, and if the pattern of the second photoresist layer does not include the second target pattern, exposing the second photoresist layer, and developing the second photoresist layer after the exposure process to remove the second photoresist layer, and repeatedly performing the step of preparing a patterned second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer until it is determined that the pattern of the second photoresist layer includes the second target pattern; The exposed area outside the second photoresist layer is etched to remove the second encapsulation layer and the second light-emitting material layer in the exposed area.

3. The method according to claim 2, characterized in that The method further comprises: A third light-emitting material layer is formed on a side of the substrate close to the isolation structure; the third light-emitting material layer is located in the first isolation opening, the second isolation opening, the third isolation opening, and a side of the isolation structure away from the substrate; the third light-emitting material layer located in the third isolation opening constitutes a third light-emitting portion; forming a third encapsulation layer on a side of the isolation structure and the third light-emitting material layer away from the substrate; A patterned third photoresist layer is prepared on a side of the third encapsulation layer away from the third light-emitting material layer; wherein the third photoresist layer covers the third encapsulation layer at a position corresponding to the third light-emitting portion and at least exposes the second encapsulation layer in the first isolation opening and the second isolation opening; Determining whether the pattern of the third photoresist layer includes a third target pattern, and if the pattern of the third photoresist layer does not include the third target pattern, exposing the third photoresist layer, and developing the third photoresist layer after the exposure process to remove the third photoresist layer, and repeatedly performing the step of preparing a patterned third photoresist layer on a side of the third encapsulation layer away from the third light-emitting material layer until it is determined that the pattern of the third photoresist layer includes the third target pattern; The exposed area outside the third photoresist layer is etched to remove the third encapsulation layer and the third light-emitting material layer in the exposed area.

4. The method according to claim 3, characterized in that Before performing exposure processing on the first photoresist layer, the method further includes: performing a cleaning process on the first photoresist layer; Before the second photoresist layer is exposed, the method further includes: performing a cleaning process on the second photoresist layer; Before the exposure process is performed on the third photoresist layer, the method further comprises: The third photoresist layer is cleaned.

5. The method according to claim 3, characterized in that: The method further comprises: If it is determined that the pattern of the first photoresist layer includes the first target pattern, before etching the exposed area outside the first photoresist layer, hard baking the first photoresist layer; The method further comprises: If it is determined that the pattern of the second photoresist layer includes the second target pattern, before etching the exposed area outside the second photoresist layer, hard baking the second photoresist layer; The method further comprises: If it is determined that the pattern of the third photoresist layer includes the third target pattern, the third photoresist layer is hard-baked before etching the exposed area outside the third photoresist layer.

6. The method according to claim 3, characterized in that The first photoresist layer is exposed and developed to remove the first photoresist layer, and the step of preparing a patterned first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer is repeated until it is determined that the pattern of the first photoresist layer includes the first target pattern, including: In the case where the first photoresist layer after the exposure process is developed to remove the first photoresist layer, checking whether the first photoresist layer is completely removed; if it is determined that the first photoresist layer is completely removed, repeatedly performing the step of preparing a patterned first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer based on the yellow light process until it is determined that the pattern of the first photoresist layer includes the first target pattern; The second photoresist layer is exposed and developed to remove the second photoresist layer, and the step of preparing a patterned second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer is repeated until it is determined that the pattern of the second photoresist layer includes the second target pattern, including: In the case where the second photoresist layer after the exposure process is developed to remove the second photoresist layer, checking whether the second photoresist layer is completely removed; if it is determined that the second photoresist layer is completely removed, repeatedly performing the step of preparing a patterned second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer based on the yellow light process until it is determined that the pattern of the second photoresist layer includes the second target pattern; The third photoresist layer is exposed and developed to remove the third photoresist layer, and the step of preparing a patterned third photoresist layer on a side of the third encapsulation layer away from the third light-emitting material layer is repeated until it is determined that the pattern of the third photoresist layer includes the third target pattern, including: When the third photoresist layer after the exposure treatment is developed to remove the third photoresist layer, check whether the third photoresist layer is completely removed; if it is determined that the third photoresist layer is completely removed, then based on the yellow light process, repeat the step of preparing a patterned third photoresist layer on the side of the third encapsulation layer away from the third light-emitting material layer until it is determined that the pattern of the third photoresist layer includes the third target pattern.

7. The method according to claim 6, characterized in that The method further comprises: If it is determined that the first photoresist layer is not completely removed, repeatedly performing the steps of cleaning the first photoresist layer, exposing the cleaned first photoresist layer, and developing the exposed first photoresist layer to remove the first photoresist layer; If it is determined that the second photoresist layer is not completely removed, repeatedly performing the steps of cleaning the second photoresist layer, exposing the cleaned second photoresist layer, and developing the exposed second photoresist layer to remove the second photoresist layer; If it is determined that the third photoresist layer is not completely removed, the steps of cleaning the third photoresist layer, exposing the cleaned third photoresist layer, and developing the exposed third photoresist layer are repeated to remove the third photoresist layer.

8. The method according to claim 1, characterized in that The step of preparing a patterned first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer comprises: Preparing an initial first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer; Pre-treating the initial first photoresist layer; Based on the first mask, performing exposure processing on the pre-processed initial first photoresist layer; The initial first photoresist layer after the exposure process is developed to obtain the patterned first photoresist layer.

9. The method according to claim 8, characterized in that The pre-processing of the initial first photoresist layer comprises: Drying the initial first photoresist layer; The initial first photoresist layer after the drying process is soft-baked.

10. The method according to claim 8, characterized in that Before preparing an initial first photoresist layer on a side of the first encapsulation layer away from the first light-emitting material layer, the method further includes: Cleaning the display panel; The display panel after the cleaning process is subjected to a hydrophobic process.

11. The method according to claim 2, characterized in that The step of preparing a patterned second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer comprises: Preparing an initial second photoresist layer on a side of the second encapsulation layer away from the second light-emitting material layer; Pre-treating the initial second photoresist layer; Based on the second mask, performing exposure processing on the pre-processed initial second photoresist layer; The initial second photoresist layer after the exposure process is developed to obtain a patterned second photoresist layer.

12. The method according to claim 3, characterized in that The step of preparing a patterned third photoresist layer on a side of the third encapsulation layer away from the third light-emitting material layer comprises: Preparing an initial third photoresist layer on a side of the third encapsulation layer away from the third light-emitting material layer; Pre-treating the initial third photoresist layer; Based on a third mask, performing exposure processing on the pre-processed initial third photoresist layer; The initial third photoresist layer after the exposure process is developed to obtain the patterned third photoresist layer.

13. The method according to claim 1, characterized in that The method further comprises: A first electrode layer is formed between the substrate and the first light emitting material layer.

14. The method according to claim 3, characterized in that The first photoresist layer is a positive photoresist material; The second photoresist layer is a positive photoresist material; The third photoresist layer is a positive photoresist material.

15. The method according to claim 3, characterized in that The first encapsulation layer is a continuous film layer; The second encapsulation layer is a continuous film layer; The third encapsulation layer is a continuous film layer.

16. A display panel, characterized in that: Prepared according to any one of claims 1 to 15.

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