Chemical mechanical polishing machine based on feeding structure

Abstract

The invention relates to the technical field of polishing machines, and discloses a chemical mechanical polishing machine based on a feeding structure, which comprises a polishing machine body consisting of a C-shaped machine base, a driving cylinder and a driving motor, an output shaft of the driving motor is fixedly connected with a transmission shaft rotationally penetrating through the C-shaped machine base and the annular baffle. The chemical mechanical polishing machine based on the feeding structure can effectively solve the problems that in the prior art, due to the fact that the polishing solution is mostly added in a middle single-point mode, the concentration of the polishing solution is not uniform at the edge of a silicon wafer or the center area of a grinding pad, local excessive polishing or insufficient polishing is caused, and the overall polishing quality is affected; and the silicon wafer is mostly fixed through a clamp or a vacuum adsorption pad, so that the exposure thickness is inconvenient to adjust when the silicon wafers with different thicknesses are polished, and the damage risk is increased due to excessive pressure on the silicon wafer in the polishing process.

Description

Technical Field

[0001] The present invention relates to the technical field of polishing machines, and particularly to a chemical mechanical polishing machine based on a feeding structure. Background Art

[0002] CMP, namely chemical mechanical polishing, is a technology for precisely grinding and polishing the surface of a silicon wafer by combining chemistry and mechanics. It can achieve global planarization of the silicon wafer surface and provide a good foundation for subsequent processes. And CMP equipment is a key process equipment in the semiconductor manufacturing field, and its polishing system usually consists of components such as a polishing head, a polishing pad, a polishing disk, and a conditioner.

[0003] In this regard, the present application designs a chemical mechanical polishing machine based on a feeding structure. Most traditional chemical mechanical polishing machines perform single-point addition of polishing liquid to the middle position of the polishing pad through a polishing chemical solution supply system. Due to the limited fluidity and dispersibility of the polishing liquid, fluctuations in temperature and concentration will directly affect the chemical reaction rate and mechanical grinding effect. Under high-load conditions of simultaneous polishing of multiple silicon wafers, there will be a phenomenon of uneven polishing liquid concentration at the edge of the silicon wafer or the central area of the polishing pad, resulting in local over-polishing or under-polishing, thus affecting the overall polishing quality; and most traditional chemical mechanical polishing machines fix the silicon wafer through a fixture or a vacuum adsorption pad, and it is inconvenient to adjust the exposed thickness when polishing silicon wafers of different thicknesses. An inappropriate exposed thickness may cause the silicon wafer to be under excessive pressure during the polishing process, thereby increasing the risk of surface damage to the silicon wafer. Summary of the Invention

[0004] Aiming at the above-mentioned shortcomings of the prior art, the present invention provides a chemical mechanical polishing machine based on a feeding structure, which can effectively solve the problems in the prior art that most use the method of single-point addition of polishing liquid to the middle position of the polishing pad. Under high-load conditions of simultaneous polishing of multiple silicon wafers, there will be a phenomenon of uneven polishing liquid concentration at the edge of the silicon wafer or the central area of the polishing pad, resulting in local over-polishing or under-polishing, thus affecting the overall polishing quality; and most traditional chemical mechanical polishing machines fix the silicon wafer through a fixture or a vacuum adsorption pad, and it is inconvenient to adjust the exposed thickness when polishing silicon wafers of different thicknesses. An inappropriate exposed thickness may cause the silicon wafer to be under excessive pressure during the polishing process, thereby increasing the risk of surface damage to the silicon wafer.

[0005] To achieve the above object, the present invention is realized through the following technical solutions:

[0006] The present invention provides a chemical mechanical polishing machine based on a feeding structure, including:

[0007] The polishing machine body consists of a C-shaped machine base, a driving cylinder and a driving motor. An annular baffle with a concave cross-section is installed on the working platform of the C-shaped machine base. The output shaft of the driving motor is fixedly connected to a transmission shaft that rotates through the C-shaped machine base and the annular baffle. A turntable is fixedly sleeved on the outer wall of the transmission shaft and is rotatably connected to the annular baffle. A grinding pad is installed at the upper end of the turntable. The telescopic end of the driving cylinder is installed with a support sleeve. A clamping and adjusting part is arranged on the support sleeve. A polishing liquid adding part is jointly arranged on the support sleeve and the clamping and adjusting part;

[0008] Among them, the clamping and adjusting part includes a mounting disc fixedly sleeved on the outer wall of the support sleeve. A plurality of connecting rods evenly distributed in a circle are installed at the lower end of the mounting disc. A polishing head is installed at the lower end of the connecting rod. A carrier plate is rotatably and hermetically installed at the lower end of the polishing head. A clamping and fine-tuning group is jointly arranged on the polishing head and the carrier plate;

[0009] Among them, the polishing liquid adding part includes an annular groove opened at the bottom end of the polishing head. A circular through hole communicating with the annular groove is opened on the outer side of the upper end of the polishing head. An annular conveying pipe is arranged on the upper side of the mounting disc. A plurality of adapter pipes are evenly communicated with the annular conveying pipe in a circle. The plurality of adapter pipes are all installed through the mounting disc and are respectively communicated with the corresponding circular through holes.

[0010] Further, the clamping and fine-tuning group includes a plurality of installation chutes opened at the lower end of the carrier plate. The plurality of installation chutes are evenly distributed in a circle. One end of the inner wall of the installation chute facing the outer wall of the carrier plate is slidably installed with an arc-shaped clamping plate through a compression spring. A plurality of receiving chutes evenly distributed in a circle are opened at the lower end of the carrier plate. An auxiliary pressing plate is arranged inside the carrier plate. The auxiliary pressing plate consists of a circular pressing plate and a plurality of rectangular sliding plates evenly distributed in a circle. The upper ends of the plurality of rectangular sliding plates are all slidably installed in the corresponding receiving chutes through compression springs, and the diameter of the circular pressing plate is smaller than the diameter of the carrier plate.

[0011] Further, the clamping and fine-tuning group further includes an adjusting frame arranged on the upper side of the polishing head. The adjusting frame consists of an annular connecting plate and a plurality of abutting rods evenly distributed in a circle. The lower ends of the plurality of abutting rods all slide through the polishing head and are in rolling contact with the upper end surface of the auxiliary pressing plate through balls. Threaded section structures are arranged on the outer walls of the plurality of connecting rods on the mounting disc. A precision threaded sleeve is rotatably installed on the inner wall of the annular connecting plate of the adjusting frame. The plurality of precision threaded sleeves are respectively threadedly connected to the threaded section structures on the corresponding connecting rods.

[0012] Further, two upper and lower annular plates slidably sleeved on the outer wall of the transmission shaft are arranged on the lower side of the support sleeve. The two upper and lower annular plates are connected by a plurality of support shafts evenly distributed in a circle. The upper end of the upper annular plate is fixedly connected to the support sleeve. Matching chutes are symmetrically opened on the upper side of the outer wall of the transmission shaft. Matching sliders slidably connected to the corresponding matching chutes are installed on the inner walls of the two upper and lower annular plates.

[0013] Further, a transmission gear is fixedly sleeved on the outer wall of the transmission shaft at positions corresponding to a plurality of support shafts, a driven gear is fixedly sleeved on the outer wall of each of the plurality of support shafts, the transmission gear is meshed with the plurality of driven gears simultaneously, a driven tooth ring is fixedly sleeved on the outer wall of each of the plurality of wafer carriers, and each of the plurality of driven gears is meshed with the corresponding driven tooth ring.

[0014] Further, the polishing liquid adding part further includes an annular groove also opened at the upper end of the wafer carrier, a plurality of groups of tapered grooves evenly distributed in a circumferential direction are opened at the bottom end of the inner wall of the annular groove, and upper and lower discharge inclined holes are opened at positions on the inner wall and the outer wall of the wafer carrier corresponding to each tapered groove, and the upper and lower discharge inclined holes are communicated with the corresponding tapered groove.

[0015] Further, extension mounting plates are installed at the lower ends of a plurality of rectangular sliding plates on the auxiliary pressing plate, and a diamond dressing plate for dressing the polishing pad is installed at the lower end of the extension mounting plate.

[0016] Further, an annular mounting groove is opened at the lower end of the turntable, a bevel gear ring is installed at one end of the inner wall of the annular mounting groove close to the transmission shaft, a plurality of rotating shafts evenly distributed in a circumferential direction are rotatably penetrated through the turntable and the annular baffle together, a bevel gear is installed at one end of the rotating shaft close to the bevel gear ring, the bevel gear ring is meshed with the bevel gear, a cleaning brush is fixedly sleeved at the position of the rotating shaft between the turntable and the annular baffle, and a waste liquid discharge port is opened at the bottom end of the inner wall of the annular baffle at the front side position.

[0017] The technical solution provided by the present invention has the following beneficial effects compared with the prior art:

[0018] A chemical mechanical polishing machine based on a feeding structure provided by the present invention adopts a method of adding polishing liquid simultaneously in multiple points and multiple directions. After a plurality of wafer carriers drive the corresponding silicon wafers to move downward respectively and closely fit on the upper end surface of the polishing pad, an external polishing chemical solution supply system, through the cooperation of an annular delivery pipe and a plurality of adapter pipes, delivers the polishing liquid to the corresponding polishing heads respectively until the polishing liquid is discharged from a plurality of discharge inclined holes communicated with a plurality of tapered grooves on the wafer carrier. At this time, the polishing liquid will flow out from the inner side and the outer side of the wafer carrier simultaneously, and contact the corresponding silicon wafer and the polishing pad respectively, avoiding the problem that in the traditional single-point polishing liquid adding method, under the high-load condition of simultaneous polishing of multiple silicon wafers, there will be a phenomenon of uneven polishing liquid concentration at the edge of the silicon wafer or the central area of the polishing pad, resulting in local over-polishing or under-polishing, thus affecting the overall polishing quality.

[0019] When polishing silicon wafers of different thicknesses and it is necessary to adjust the thickness of the lower end face of the silicon wafer exposed from the lower end face of the carrier plate, the staff can sequentially rotate the precision screw sleeves. Multiple precision screw sleeves will drive the corresponding adjusting frames to move up or down respectively, so as to achieve the effect of finely adjusting the thickness of the lower end face of the silicon wafer exposed from the lower end face of the carrier plate by means of squeezing the fixing space of the silicon wafer with the auxiliary pressing plate. Brief Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0021] Figure 1 Is a schematic three-dimensional structure diagram in an embodiment of the present invention;

[0022] Figure 2 Is a schematic structure diagram of a three-dimensional partial section in an embodiment of the present invention;

[0023] Figure 3 Is a schematic three-dimensional structure diagram of the engaging adjustment part and the polishing liquid adding part in an embodiment of the present invention;

[0024] Figure 4 Is a schematic structure diagram of the transmission shaft, the grinding pad and the support sleeve separated three-dimensionally in an embodiment of the present invention;

[0025] Figure 5 Is a schematic structure diagram of the transmission gear, the passive gear and the passive gear ring separated three-dimensionally in an embodiment of the present invention;

[0026] Figure 6 Is a schematic structure diagram of the engaging adjustment part separated three-dimensionally in an embodiment of the present invention;

[0027] Figure 7 Is a schematic first structure diagram of the engaging fine adjustment group separated three-dimensionally in an embodiment of the present invention;

[0028] Figure 8 Is a schematic second structure diagram of the engaging fine adjustment group separated three-dimensionally in an embodiment of the present invention;

[0029] Figure 9 Is a schematic structure diagram of a three-dimensional partial section of the carrier plate in an embodiment of the present invention;

[0030] Figure 10 Is a schematic diagram of the working state conversion of the annular plate, the polishing head and the carrier plate in an embodiment of the present invention.

[0031] The reference numerals in the figure respectively represent: 1, polishing machine body; 11, bevel gear ring; 12, bevel gear; 13, cleaning brush; 2, transmission shaft; 3, grinding pad; 4, support sleeve; 41, annular plate; 42, transmission gear; 43, passive gear; 44, passive gear ring; 5, clamping and adjusting part; 51, mounting plate; 52, polishing head; 53, wafer carrier; 54, clamping fine adjustment group; 541, arc-shaped clamping plate; 542, auxiliary pressing plate; 543, adjusting frame; 544, precision thread sleeve; 545, extended mounting plate; 546, diamond dressing plate; 6, polishing liquid adding part; 61, annular conveying pipe; 62, adapter pipe; 63, discharge inclined hole. Detailed implementation manners

[0032] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0033] The present invention will be further described below with reference to the embodiments.

[0034] Embodiment:

[0035] Please refer to Figures 1 - 10 , the present invention provides a technical solution: a chemical mechanical polishing machine based on a feeding structure, including:

[0036] A polishing machine body 1 composed of a C-shaped machine base, a driving cylinder and a driving motor. An annular baffle with a concave cross-section is installed on the working platform of the C-shaped machine base. The output shaft of the driving motor is fixedly connected to a transmission shaft 2 that rotates through the C-shaped machine base and the annular baffle. A turntable rotatably connected to the annular baffle is fixedly sleeved on the outer wall of the transmission shaft 2. A grinding pad 3 is installed at the upper end of the turntable. The telescopic end of the driving cylinder is installed with a support sleeve 4. A clamping and adjusting part 5 is arranged on the support sleeve 4. A polishing liquid adding part 6 is jointly arranged on the support sleeve 4 and the clamping and adjusting part 5;

[0037] Among them, the clamping and adjusting part 5 includes a mounting plate 51 fixedly sleeved on the outer wall of the support sleeve 4. A plurality of connecting rods evenly distributed in a circumferential manner are installed at the lower end of the mounting plate 51. A polishing head 52 is installed at the lower end of the connecting rod. A wafer carrier 53 is rotatably and sealingly installed at the lower end of the polishing head 52. A clamping fine adjustment group 54 is jointly arranged on the polishing head 52 and the wafer carrier 53;

[0038] Among them, the polishing liquid adding part 6 includes an annular groove formed at the bottom end of the polishing head 52. A circular through hole communicating with the annular groove is formed on the outer side of the upper end of the polishing head 52. An annular conveying pipe 61 is arranged on the upper side of the mounting disk 51. A plurality of adapter pipes 62 are uniformly communicated with the annular conveying pipe 61 in a circumferential manner. The plurality of adapter pipes 62 all penetrate through and are mounted on the mounting disk 51 and are respectively communicated with the corresponding circular through holes.

[0039] The clamping and fine-tuning group 54 includes a plurality of mounting sliding grooves formed at the lower end of the wafer carrier 53. The plurality of mounting sliding grooves are uniformly distributed in a circumferential manner. One end of the inner wall of the mounting sliding groove facing the outer wall of the wafer carrier 53 is slidably mounted with an arc-shaped clamping plate 541 through a compression spring. A plurality of accommodating sliding grooves uniformly distributed in a circumferential manner are formed at the lower end of the wafer carrier 53. An auxiliary pressing plate 542 is arranged inside the wafer carrier 53. The auxiliary pressing plate 542 is composed of a circular pressing plate and a plurality of rectangular sliding plates uniformly distributed in a circumferential manner. The upper ends of the plurality of rectangular sliding plates are all slidably mounted in the corresponding accommodating sliding grooves through compression springs, and the diameter of the circular pressing plate is smaller than the diameter of the wafer carrier 53.

[0040] The clamping and fine-tuning group 54 further includes an adjusting frame 543 arranged on the upper side of the polishing head 52. The adjusting frame 543 is composed of an annular connecting plate and a plurality of abutting rods uniformly distributed in a circumferential manner. The lower ends of the plurality of abutting rods all slide through the polishing head 52 and are in rolling contact with the upper end surface of the auxiliary pressing plate 542 through balls. Threaded section structures are arranged on the outer walls of the plurality of connecting rods on the mounting disk 51. A precision threaded sleeve 544 is rotatably mounted on the inner wall of the annular connecting plate of the adjusting frame 543. The plurality of precision threaded sleeves 544 are respectively threadedly connected to the threaded section structures on the corresponding connecting rods.

[0041] Two upper and lower annular plates 41 which are slidably sleeved on the outer wall of the transmission shaft 2 are arranged on the lower side of the support sleeve 4. The two upper and lower annular plates 41 are connected by a plurality of support shafts uniformly distributed in a circumferential manner. The upper end of the upper annular plate 41 is fixedly connected to the support sleeve 4. Matching sliding grooves are symmetrically formed on the upper side of the outer wall of the transmission shaft 2. The inner walls of the two upper and lower annular plates 41 are both provided with matching sliders slidably connected in the corresponding matching sliding grooves.

[0042] A transmission gear 42 is fixedly sleeved on the outer wall of the transmission shaft 2 at positions corresponding to the plurality of support shafts. Passive gears 43 are fixedly sleeved on the outer walls of the plurality of support shafts. The transmission gear 42 is simultaneously meshed with the plurality of passive gears 43. Passive gear rings 44 are fixedly sleeved on the outer walls of the plurality of wafer carriers 53. The plurality of passive gears 43 are respectively meshed with the corresponding passive gear rings 44.

[0043] The polishing liquid adding part 6 further includes an annular groove also formed at the upper end of the wafer carrier 53. A plurality of groups of tapered grooves uniformly distributed in a circumferential manner are formed at the bottom end of the inner wall of the annular groove. Upper and lower discharge inclined holes 63 are formed at positions corresponding to each tapered groove on the inner and outer walls of the wafer carrier 53. The upper and lower discharge inclined holes 63 are both communicated with the corresponding tapered grooves.

[0044] At the lower ends of multiple rectangular sliding plates on the auxiliary pressing plate 542, extension mounting plates 545 are installed, and at the lower ends of the extension mounting plates 545, diamond dressing plates 546 for dressing the polishing pad 3 are installed.

[0045] An annular mounting groove is formed at the lower end of the turntable. At one end of the inner wall of the annular mounting groove close to the transmission shaft 2, a bevel gear ring 11 is installed. A plurality of rotating shafts evenly distributed in a circle are rotatably penetrated through the turntable and the annular baffle together. At one end of the rotating shaft close to the bevel gear ring 11, a bevel gear 12 is installed. The bevel gear ring 11 and the bevel gear 12 are meshed with each other. A cleaning brush 13 is fixedly sleeved at the position of the rotating shaft between the turntable and the annular baffle, and a waste liquid discharge port is formed at the bottom end of the inner wall of the annular baffle at the front side position.

[0046] During specific implementation:

[0047] First, during feeding, the support sleeve 4 is first controlled by the driving cylinder to move upward to the highest position. At this time, under the action of the compression spring, the plurality of arc-shaped clamping plates 541 are in the extended state. Then, the staff sequentially place the silicon wafers to be polished from bottom to top into the corresponding wafer carriers 53 and closely attach them to the lower end surface of the auxiliary pressing plate 542. During this period, the silicon wafers will simultaneously squeeze the corresponding plurality of arc-shaped clamping plates 541, causing them to retract into the corresponding mounting chutes respectively, so as to realize the effect of clamping and limiting the silicon wafers jointly by the plurality of arc-shaped clamping plates 541 and the auxiliary pressing plate 542.

[0048] When adding the polishing liquid, after the fixing of the plurality of silicon wafers is completed, the support sleeve 4 is controlled by the driving cylinder to move downward. The support sleeve 4 drives the plurality of polishing heads 52 and the wafer carriers 53 to move downward synchronously through the mounting plate 51 until the plurality of wafer carriers 53 drive the corresponding silicon wafers to move downward to closely attach to the upper end surface of the polishing pad 3. At this time, an external polishing chemical solution supply system transports the polishing liquid into the annular delivery pipe 61 through the delivery pipe, and the annular delivery pipe 61 transports it into the plurality of adapter pipes 62 respectively. Then, the polishing liquid is transported into the corresponding polishing heads 52 through the plurality of adapter pipes 62 respectively. The polishing liquid will continue to be input into the corresponding annular grooves through the corresponding circular through holes, and finally discharged through the plurality of discharge inclined holes 63 communicated with the plurality of tapered grooves on the wafer carrier 53. At this time, the polishing liquid will flow out from both the inner and outer sides of the wafer carrier 53 and contact the corresponding silicon wafers and the polishing pad 3 respectively, avoiding the problem that in the traditional single-point polishing liquid adding method, under the high-load condition of simultaneous polishing of multiple silicon wafers, the solution concentration is uneven at the edge of the silicon wafer or the central area of the polishing pad 3, resulting in local over-polishing or under-polishing, thus affecting the overall polishing quality.

[0049] During polishing, first, the drive motor controls the transmission shaft 2 to drive the turntable to rotate. The turntable will drive the polishing pad 3 to rotate synchronously. At the same time, the transmission shaft 2 will drive the transmission gear 42 to rotate synchronously. Through the transmission between the transmission gear 42 and multiple passive gears 43 and multiple passive gear rings 44, multiple wafer carriers 53 will be driven to rotate synchronously. The wafer carriers 53 will jointly drive the corresponding silicon wafers to rotate synchronously through the corresponding multiple arc-shaped clamping plates 541, so as to polish multiple silicon wafers simultaneously. After the polishing work is completed, while controlling the drive motor to stop working, the support sleeve 4 is controlled to move upward by the drive cylinder. The support sleeve 4 drives multiple polishing heads 52 and wafer carriers 53 to move upward synchronously through the mounting plate 51 to return to their original positions. At this time, multiple wafer carriers 53 will drive the corresponding silicon wafers to move upward respectively, facilitating the subsequent removal of the polished silicon wafers. It should be noted that multiple silicon wafers and the polishing pad 3 rotate in the same direction, which can effectively enhance the contact uniformity between the surface of the silicon wafer and the polishing pad 3, and the pressure distribution in the contact area is more stable, helping to achieve uniform polishing of the surface material of the silicon wafer to remove burrs, defects or oxides on the material surface.

[0050] During the continuous polishing of multiple silicon wafers simultaneously, due to the accumulation of friction and normal pressure, the polishing pad 3 will gradually wear, its surface will gradually become smooth and form a glaze. At the same time, the surface of the polishing pad 3 is also easily filled with polishing residues and dust particles, which will cause the distribution of the polishing liquid on the polishing pad 3 to become uneven, thereby affecting the storage and transportation capacity of the polishing liquid. It should be noted that multiple wafer carriers 53 will drive the corresponding auxiliary pressing plates 542 to rotate synchronously. At this time, the balls on the adjusting frame 543 will play a role in rolling friction reduction. The auxiliary pressing plates 542 will drive the corresponding diamond dressing plates 546 to rotate synchronously through multiple extended mounting plates 545. At this time, the diamond dressing plates 546 on multiple wafer carriers 53 will rotate synchronously in the same direction and do not interfere with each other, thus realizing the effect of multiple dressing of the surface of the polishing pad 3, effectively improving the removal efficiency of the polishing pad 3 and avoiding adverse effects on the surface quality of the silicon wafer.

[0051] When the turntable rotates, the turntable will drive the bevel gear ring 11 to rotate synchronously. Through the transmission between the bevel gear ring 11 and multiple bevel gears 12, the corresponding rotating shafts will be driven to rotate respectively. Multiple rotating shafts will drive the corresponding cleaning brushes 13 to rotate. Whenever multiple diamond dressing plates 546 follow the corresponding wafer carriers 53 to rotate to the position of the corresponding cleaning brush 13, the cleaning brush 13 can cooperate with an external cleaning liquid spraying device to clean its dressing end face, so as to ensure the dressing effect of multiple diamond dressing plates 546 during the polishing work.

[0052] When it is necessary to take out the polished silicon wafer, the staff will rotate the precision threaded sleeve 544 in turn. Through the precision threaded sleeve 544 and the corresponding connecting rod thread transmission, multiple precision threaded sleeves 544 will respectively drive the corresponding adjustment frame 543 to move downward, and the adjustment frame 543 will jointly push the corresponding auxiliary pressure plate 542 through multiple resistance rods to move it downward. At this time, the auxiliary pressure plate 542 will push the corresponding silicon wafer to achieve the effect of smooth removal, and under the action of the compression spring, the multiple arc-shaped clamping plates 541 will return to the extended state. It should be noted that When polishing silicon wafers of different thicknesses and adjusting the thickness of the lower end surface of the silicon wafer exposed from the lower end surface of the wafer carrier 53, the staff can rotate the precision threaded sleeve 544 in sequence, and multiple precision threaded sleeves 544 will respectively drive the corresponding adjustment frame 543 to move upward or downward. Under the action of the compression spring, the upper end surface of the auxiliary pressure plate 542 will always fit on the ball bearings of the multiple resistance rods, thereby squeezing the silicon wafer fixed space by the auxiliary pressure plate 542 to achieve the effect of fine-tuning the thickness of the lower end surface of the silicon wafer exposed from the lower end surface of the wafer carrier 53.

[0053] In summary, this application has the following advantages:

[0054] Advantage 1: When loading, the support sleeve 4 is controlled by driving the cylinder to move upward to the highest position, and then the staff puts the silicon wafers to be polished into the corresponding carrier plate 53 from bottom to top and fits them tightly on the lower end surface of the auxiliary pressure plate 542, thereby achieving the effect of clamping and limiting the silicon wafers through multiple arc-shaped clamping plates 541 and auxiliary pressure plates 542.

[0055] Advantage 2: When adding polishing liquid, after the multiple wafer carriers 53 respectively drive the corresponding silicon wafers to move downward until they are tightly fitted on the upper end surface of the grinding pad 3, the external polishing chemical solution supply system, through the annular delivery pipe 61 and the multiple transfer pipes 62, delivers the polishing liquid to the corresponding polishing head 52 until the polishing liquid is discharged from the multiple discharge inclined holes 63 connected by the multiple conical grooves on the wafer carrier 53. At this time, the polishing liquid will flow out from the inside and outside of the wafer carrier 53 at the same time, and contact the corresponding silicon wafer and the grinding pad 3 respectively, avoiding the traditional single-point polishing liquid addition method. Under the high-load condition of polishing multiple silicon wafers at the same time, the solution concentration will be uneven at the edge of the silicon wafer or the center area of ​​the grinding pad 3, resulting in local over-polishing or insufficient polishing, thereby affecting the overall polishing quality.

[0056] Advantage 3: During polishing, the drive motor controls the transmission shaft 2 to drive the turntable and the polishing pad 3 to rotate synchronously. At the same time, multiple wafer carriers 53 will also rotate synchronously. The wafer carriers 53 drive the corresponding silicon wafers to rotate synchronously through a corresponding plurality of arc-shaped clamping plates 541, so as to polish multiple silicon wafers simultaneously. Moreover, the multiple silicon wafers and the polishing pad 3 rotate in the same direction, which can effectively enhance the contact uniformity between the surface of the silicon wafer and the polishing pad 3, and the pressure distribution in the contact area is more stable, helping to achieve uniform polishing of the surface material of the silicon wafer to remove burrs, defects or oxides on the material surface.

[0057] Advantage 4: When cleaning the polishing pad 3, multiple wafer carriers 53 will drive the corresponding auxiliary pressing plates 542 to rotate synchronously. The auxiliary pressing plates 542 will drive the corresponding diamond dressing plates 546 to rotate synchronously through a plurality of extended mounting plates 545. At this time, the diamond dressing plates 546 on multiple wafer carriers 53 will rotate synchronously in the same direction and do not interfere with each other, so as to achieve the effect of multiple dressing of the surface of the polishing pad 3, effectively improving the removal efficiency of the polishing pad 3 and avoiding adverse effects on the surface quality of the silicon wafer.

[0058] Advantage 5: In addition, the turntable will drive the bevel gear ring 11 to rotate synchronously. Through the transmission of the bevel gear ring 11 and a plurality of bevel gears 12, the corresponding rotating shafts will be driven to rotate respectively, and the plurality of rotating shafts will drive the corresponding cleaning brushes 13 to rotate. Whenever the multiple diamond dressing plates 546 rotate to the position of the corresponding cleaning brush 13 following the corresponding wafer carriers 53, the cleaning brush 13 can cooperate with an external cleaning liquid spraying device to clean its dressing end face, so as to ensure the dressing effect of the multiple diamond dressing plates 546 during the polishing work.

[0059] Advantage 6: When polishing silicon wafers of different thicknesses and it is necessary to adjust the thickness of the lower end face of the silicon wafer exposed from the lower end face of the wafer carrier 53, the staff can sequentially rotate the precision thread sleeves 544. The multiple precision thread sleeves 544 will drive the corresponding adjusting frames 543 to move up or down respectively, so as to achieve the effect of fine-tuning the thickness of the lower end face of the silicon wafer exposed from the lower end face of the wafer carrier 53 by squeezing the fixing space of the silicon wafer through the auxiliary pressing plate 542.

[0060] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements will not make the essence of the corresponding technical solutions deviate from the protection scope of the technical solutions of the embodiments of the present invention.

Claims

1. A chemical mechanical polishing machine based on a feeding structure, characterized in that: include: A polishing machine body (1) is composed of a C-shaped machine base, a driving cylinder and a driving motor. A ring baffle with a concave cross-section is installed on the working platform of the C-shaped machine base. The output shaft of the driving motor is fixedly connected to a transmission shaft (2) that rotatably penetrates the C-shaped machine base and the ring baffle. A turntable that is rotatably connected to the ring baffle is fixedly sleeved on the outer wall of the transmission shaft (2). A grinding pad (3) is installed on the upper end of the turntable. A supporting sleeve (4) is installed at the telescopic end of the driving cylinder. A clamping adjustment portion (5) is provided on the supporting sleeve (4). A polishing liquid adding portion (6) is commonly provided on the supporting sleeve (4) and the clamping adjustment portion (5). The engaging adjustment portion (5) comprises a mounting plate (51) fixedly mounted on the outer wall of the supporting sleeve (4); a plurality of connecting rods evenly distributed in a circumference are mounted on the lower end of the mounting plate (51); a polishing head (52) is mounted on the lower end of the connecting rod; a wafer carrier (53) is rotatably and sealably mounted on the lower end of the polishing head (52); and an engaging fine-tuning group (54) is provided on the polishing head (52) and the wafer carrier (53); The polishing liquid adding part (6) comprises an annular groove formed at the bottom end of the polishing head (52), a circular through hole connected to the annular groove is formed on the outer side of the upper end of the polishing head (52), an annular delivery pipe (61) is provided on the upper side of the mounting plate (51), a plurality of transfer pipes (62) are evenly connected to the annular delivery pipe (61), and the plurality of transfer pipes (62) are all installed on the mounting plate (51) and are respectively connected to corresponding circular through holes.

2. The chemical mechanical polishing machine based on the feeding structure according to claim 1, characterized in that: The engaging fine-tuning group (54) comprises a plurality of mounting grooves provided at the lower end of the wafer carrier (53), the plurality of mounting grooves being evenly distributed in a circle, an arc-shaped clamping plate (541) being slidably installed at one end of the inner wall of the mounting groove facing the outer wall of the wafer carrier (53) through a compression spring, a plurality of accommodating grooves evenly distributed in a circle being provided at the lower end of the wafer carrier (53), an auxiliary pressing plate (542) being arranged inside the wafer carrier (53), the auxiliary pressing plate (542) being composed of a circular pressing plate and a plurality of rectangular sliding plates evenly distributed in a circle, the upper ends of the plurality of rectangular sliding plates being slidably installed in the corresponding accommodating sliding grooves through a compression spring, and the diameter of the circular pressing plate being smaller than the diameter of the wafer carrier (53).

3. The chemical mechanical polishing machine based on the feeding structure according to claim 2, characterized in that: The locking fine-tuning group (54) further comprises an adjustment frame (543) arranged on the upper side of the polishing head (52), the adjustment frame (543) comprising an annular connecting plate and a plurality of circumferentially evenly distributed abutment rods, the lower ends of the plurality of abutment rods all slide through the polishing head (52) and contact the upper end surface of the auxiliary pressure plate (542) through ball rolling, the outer walls of the plurality of connecting rods on the mounting plate (51) are all provided with threaded segment structures, the inner wall of the annular connecting plate of the adjustment frame (543) is rotatably mounted with a precision threaded sleeve (544), and the plurality of precision threaded sleeves (544) are respectively threadedly connected to the threaded segment structures on the corresponding connecting rods.

4. The chemical mechanical polishing machine based on the feeding structure according to claim 3, characterized in that: The support sleeve (4) is provided with two upper and lower annular plates (41) slidably mounted on the outer wall of the transmission shaft (2) on the lower side, the upper and lower annular plates (41) are connected via a plurality of support shafts evenly distributed on the circumference, the upper end of the upper annular plate (41) is fixedly connected to the support sleeve (4), the upper side of the outer wall of the transmission shaft (2) is symmetrically provided with matching sliding grooves, and the inner walls of the upper and lower annular plates (41) are both provided with matching sliding blocks slidably connected to the corresponding matching sliding grooves.

5. The chemical mechanical polishing machine based on the feeding structure according to claim 4, characterized in that: A transmission gear (42) is fixedly sleeved on the outer wall of the transmission shaft (2) at positions corresponding to the plurality of support shafts, a passive gear (43) is fixedly sleeved on the outer walls of the plurality of support shafts, the transmission gear (42) is meshed with the plurality of passive gears (43) at the same time, and a passive gear ring (44) is fixedly sleeved on the outer walls of the plurality of wafer carriers (53), and the plurality of passive gears (43) are respectively meshed with the corresponding passive gear rings (44).

6. The chemical mechanical polishing machine based on the feeding structure according to claim 1, characterized in that: The polishing liquid adding part (6) also includes an annular groove also provided at the upper end of the wafer carrier (53), and a plurality of groups of conical grooves evenly distributed in a circumference are provided at the bottom end of the inner wall of the annular groove, and two upper and lower discharge inclined holes (63) are provided at the position corresponding to each conical groove on the inner wall and the outer wall of the wafer carrier (53), and the two upper and lower discharge inclined holes (63) are both connected to the corresponding conical groove.

7. The chemical mechanical polishing machine based on the feeding structure according to claim 3, characterized in that: The lower ends of the plurality of rectangular slides on the auxiliary pressing plate (542) are all mounted with an extended mounting plate (545), and the lower end of the extended mounting plate (545) is mounted with a diamond trimming plate (546) for trimming the grinding pad (3).

8. The chemical mechanical polishing machine based on the feeding structure according to claim 1, characterized in that: The lower end of the turntable is provided with an annular mounting groove, and a bevel gear ring (11) is installed on the inner wall of the annular mounting groove at one end close to the transmission shaft (2). A plurality of rotating shafts evenly distributed in a circumference are installed and rotated together on the turntable and the annular baffle plate, and a bevel gear (12) is installed on one end of the rotating shaft close to the bevel gear ring (11). The bevel gear ring (11) and the bevel gear (12) are meshed with each other. A cleaning brush (13) is fixedly sleeved on the rotating shaft located between the turntable and the annular baffle plate, and a waste liquid discharge outlet is provided at the bottom end of the inner wall of the annular baffle plate at the front position.

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