Wafer detection device and detection method for electrochemical polishing equipment

Abstract

The invention discloses a wafer detection device for electrochemical polishing equipment, and the device comprises a polishing head which is provided with an acting part for adsorbing a wafer, the acting part at least comprises a first conductive region, a second conductive region and an insulating region, and the insulating region is used for isolating the first conductive region from the second conductive region; one electrode of the power supply is connected with the first conductive area, and the other electrode is connected with the circuit switching unit; and the circuit on-off detection unit is respectively connected with the circuit switching unit and the second conductive area, and when the acting piece adsorbs the wafer to enable the first conductive area and the second conductive area to be electrically conducted, the circuit on-off detection unit can detect the change of the electrical quantity in the circuit. The invention further discloses a wafer detection method of the electrochemical polishing equipment. Whether the polishing head adsorbs the wafer or not can be quickly and accurately judged according to the change of the electrical quantity, the judgment sensitivity is high, the judgment reliability is high, and the complexity of circuit structure design is reduced through the conductivity of the acting piece.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to a wafer detection device and a detection method for an electrochemical polishing device. Background Art

[0002] Since the mid-1990s, chemical mechanical planarization (CMP) has become the main technology for achieving global planarization of the entire silicon wafer surface. Now, CMP can be applied to a variety of thin films and a variety of materials on the same silicon wafer surface, and this flexibility makes CMP one of the indispensable technologies for chip manufacturing. The process of CMP is fully automated, and the reliability of each step needs to be ensured to reduce losses and improve production efficiency. In CMP, there are multiple transfers or transports of wafers, and it is necessary to detect whether each transfer or transport is successful to prevent the equipment from idling and even causing mechanical damage. For example, before polishing a wafer, the polishing head usually grabs the wafer onto the polishing pad, and there may be a possibility of unsuccessful grabbing or wafer dropping during this process. Therefore, it is necessary to detect whether the wafer exists.

[0003] To improve the CMP polishing efficiency, the polishing time can be shortened by increasing the surface temperature of the polishing pad or increasing the pressure between the wafer and the polishing pad, but these methods have limited effects, especially for materials such as silicon carbide in the third-generation semiconductors, which have high hardness and low efficiency with traditional polishing methods. Utilizing the conductivity of semiconductor materials, electrochemical polishing is a means that is expected to improve the polishing efficiency currently.

[0004] The adsorption film of the polishing head is generally made of silica gel material, and the realization of electrochemical polishing requires a conductive adsorption film that can conduct electricity and is connected to the wafer as one pole of the power supply during the polishing process. The slurry on the polishing pad serves as the other pole of the power supply, enabling the wafer to be in an electrochemical environment and accelerating the polishing process. During the process of the polishing head grabbing the wafer, it is necessary to detect whether the grabbing is successful and the situation of wafer dropping to prevent damage to each other between the polishing head and the polishing pad.

[0005] Chinese Patent CN206105601U discloses "CMP Equipment Polishing Head Wafer Dropping Detection System", which uses a pressure monitoring module to monitor the vacuum adsorption pressure in the wafer-grabbing area of the polishing head and determines that the polishing head has dropped the wafer when the vacuum adsorption pressure exceeds a predetermined pressure threshold. However, it can only detect whether the adsorption film has dropped the wafer and cannot determine whether the adsorption film has accurately picked up the wafer. Moreover, there is a pressure change process in the detection of the pressure value, and it cannot achieve the purpose of instantaneous detection, and the detection sensitivity is relatively low. Summary of the Invention

[0006] To overcome the deficiencies of the prior art, the present invention provides a wafer detection device and a detection method for an electrochemical polishing apparatus, which uses electrical principles to detect whether the polishing head successfully picks up or drops the wafer, thereby avoiding damage to the polishing head and the polishing platen.

[0007] The technical solution adopted by the present invention to solve its technical problems is: a wafer detection device for an electrochemical polishing apparatus, comprising:

[0008] A polishing head, with a component for adsorbing the wafer, the component at least includes a first conductive region, a second conductive region, and an insulating region, and the insulating region is used to isolate the first conductive region and the second conductive region;

[0009] A power supply, one electrode of which is connected to the first conductive region, and the other electrode is connected to a circuit switching unit;

[0010] A circuit on / off detection unit, which is respectively connected to the circuit switching unit and the second conductive region. When the component adsorbs the wafer and the first conductive region and the second conductive region are electrically connected, the circuit on / off detection unit can detect the change in the electrical quantity in the circuit.

[0011] Furthermore, it further includes a polishing circuit. After it is determined that the component adsorbs the wafer, the flow direction of the electrochemical polishing current is: power supply, circuit switching unit, polishing table, wafer, power supply.

[0012] Furthermore, the circuit switching unit is a change-over switch, and the number thereof is one or two or more.

[0013] Furthermore, the circuit on / off detection unit includes a switch, a resistor, and an electrical quantity detection component, and the opening and closing of the switch are realized by the contact or separation of the wafer and the second conductive region.

[0014] Furthermore, the electrical quantity includes high and low levels, current, and resistance.

[0015] Furthermore, the number of the second conductive regions is one or two or more.

[0016] Furthermore, the circuit switching unit is selectively conductively connected to the circuit on / off detection unit or to the polishing circuit.

[0017] Furthermore, it further includes a control unit, which is used to control the circuit switching unit to be conductively connected to the power supply or to the polishing circuit, and to control the output magnitude of the current and voltage of the power supply.

[0018] Furthermore, the power supply is an adjustable power supply, its output voltage is 0 - 60V, and its output current is 0 - 15A; or, the output voltage of the power supply is 0 - 24V, and its output current is 0 - 1A.

[0019] The present invention also discloses a wafer detection method for an electrochemical polishing device, comprising the following steps:

[0020] The acting member for adsorbing the wafer forms at least a first conductive region and a second conductive region, and the first conductive region and the second conductive region are isolated by an insulating region;

[0021] Connect one electrode of the power supply to the first conductive region, and the other electrode of the power supply to the circuit switching unit;

[0022] Connect the circuit on-off detection unit to the circuit switching unit and the second conductive region respectively;

[0023] When the acting member adsorbs the wafer, the first conductive region and the second conductive region are conducted, and the electrical quantity in the circuit generates a difference from the initial value when the wafer is not adsorbed, it is determined that the wafer has been adsorbed by the acting member;

[0024] When the acting member does not adsorb the wafer, the first conductive region and the second conductive region are not conducted, and the electrical quantity in the circuit is the same as the initial value when the wafer is not adsorbed, it is determined that the wafer has not been adsorbed by the acting member.

[0025] Further, in the step of judging whether the wafer is adsorbed by the acting member according to whether the electrical quantity in the circuit changes, the change of the electrical quantity includes the conversion of high and low levels, or / and the change of the current value, or / and the change of the resistance value.

[0026] Further, it further comprises the following steps

[0027] A polishing circuit is formed among the power supply, the circuit switching unit, the polishing table, the wafer and the power supply;

[0028] After it is judged that the acting member adsorbs the wafer, the circuit switching unit switches from the circuit on-off detection unit to the polishing circuit;

[0029] The power supply, the circuit switching unit, the polishing table, the wafer and the power supply form a conducting loop to realize the electrochemical mechanical polishing of the wafer.

[0030] Further, it comprises the following steps

[0031] The acting member for adsorbing the wafer forms a first conductive region and two or more second conductive regions, and the first conductive region and the second conductive region are isolated by an insulating region;

[0032] Connect one electrode of the power supply to the first conductive region, and the other electrode of the power supply to the circuit switching unit;

[0033] Connect the circuit on-off detection unit to the circuit switching unit and two or more second conductive regions respectively;

[0034] The acting member adsorbs the wafer, enabling the first conductive region and two or more second conductive regions to conduct. Differences occur in multiple electrical quantities in the circuit compared to the initial values when the wafer is not adsorbed, and it is determined that the wafer is adsorbed by the acting member.

[0035] When the acting member does not adsorb the wafer, the first conductive region and two or more second conductive regions are not conducting, and multiple electrical quantities in the circuit are the same as the initial values when the wafer is not adsorbed, and it is determined that the wafer is not adsorbed by the acting member.

[0036] The beneficial effects of the present invention are as follows: 1) During the CMP process of polishing the wafer, the wafer is transferred multiple times, and each transfer is accompanied by a risk of failure. When the polishing head transfers the wafer, the wafer may fail to pick up due to insufficient tight fit, or there may be a risk of dropping the wafer during the wafer transfer process. By using the change in electrical quantity, it can be quickly and accurately determined whether the polishing head accurately adsorbs the wafer, with high judgment sensitivity and high judgment reliability; 2) The conductivity of the acting member can not only serve as one pole of the polishing circuit but also be used to detect the presence of the wafer through circuit detection, and the two do not interfere with each other. The entire system has high safety and reduces the complexity of the circuit structure design; 3) There is one or more second conductive regions on the polishing head, which can form multiple detection points, thereby forming redundant detection to prevent false detection caused by insufficient contact between the acting member and the wafer; 4) The switching between the detection circuit for whether the wafer is adsorbed and the electrochemical polishing circuit is convenient and flexible, realizing the multi-functionality of the circuit and having high safety performance; 5) This detection method has strong inclusiveness and can be applied to various types of polishing heads. There is no specific limitation on the material of the acting member, whether it is soft or hard, as long as it can conduct electricity, it can be detected; 6) The electrical quantity can include high and low levels, current, resistance, which can be one or more of them, and can be selected according to actual needs. Moreover, due to the variety of selections, even if the change in the electrical quantity when the wafer is adsorbed is subtle, it can still be detected, preventing false detection due to the subtle change in the electrical quantity. Brief Description of the Drawings

[0037] Figure 1 It is a simplified diagram of the detection device in the first embodiment of the present invention.

[0038] Figure 2 It is a bottom view of the acting member in the first embodiment of the present invention.

[0039] Figure 3 It is a simplified circuit diagram of the detection device in the first embodiment of the present invention.

[0040] Figure 4 It is a simplified diagram of the circuit on / off detection unit in the first embodiment of the present invention.

[0041] Figure 5 It is a simplified diagram of the detection device in the second embodiment of the present invention.

[0042] Figure 6 The bottom view of the acting member in the second embodiment of the present invention.

[0043] Figure 7 The schematic circuit diagram of the detection device in the second embodiment of the present invention.

[0044] Wherein, 1-polishing head, 2-acting member, 21-first conductive region, 22-second conductive region, 23-insulating region, 3-power supply, 4-circuit switching unit, 5-circuit on-off detection unit, 51-switch, 52-resistor, 53-electrical quantity detection component, 6-wafer, 7-polishing table, 8-polishing circuit, 9-control unit. Detailed implementation manners

[0045] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0046] Embodiment 1

[0047] As Figure 1 、 Figure 3 shown, a wafer detection device for an electrochemical polishing apparatus includes a polishing head 1, a power supply 3, and a circuit on-off detection unit 5. The polishing head 1 is provided with an acting member 2 for adsorbing a wafer 6. The acting member 2 is made of metal, which is conductive and has an air cavity formed therein. The lower surface of the acting member 2 has air holes, and a negative pressure is formed through the air cavity. The wafer 6 can be adsorbed by using the air holes, so as to achieve the purpose of the polishing head 1 grasping the wafer 6.

[0048] Certainly, in other embodiments, the acting member 2 may also be an adsorption film structure, which generates an arc-shaped deformation under a positive pressure and contacts the wafer 6, discharges the air between the adsorption film and the wafer 6, and then the pressure of the adsorption film of the polishing head 1 becomes negative pressure to suck up the wafer 6. Specifically, when the acting member 2 is an adsorption film structure, it may be composed of a thin metal layer, or may be composed of conductive particles and a flexible material in a certain proportion. In addition to generating a certain deformation under the action of positive pressure or negative pressure, it also has good conductivity.

[0049] The specific form of the acting member 2 adsorbing the wafer 6 can be changed without limitation.

[0050] As Figure 2As shown, the actuating member 2 at least includes a first conductive region 21, a second conductive region 22, and an insulating region 23. The insulating region 23 is used to isolate the first conductive region 21 and the second conductive region 22, that is, the insulating region 23 insulates the first conductive region 21 and the second conductive region 22 of the actuating member 2, and they will not conduct without an external conductor.

[0051] One electrode of the power supply 3 is connected to the first conductive region 21, and the other electrode is connected to the circuit switching unit 4. In this embodiment, the positive electrode of the power supply 3 is connected to the first conductive region 21, and the negative electrode of the power supply 3 is connected to the circuit switching unit 4. The circuit switching unit 4 is a switching switch, and the number thereof is one.

[0052] In this embodiment, the power supply 3 is an adjustable power supply, which can provide both polishing current and detection current. When used as a polishing power supply, the typical output voltage is 0 - 60V, and the output current is 0 - 15A; when used as a detection power supply, the typical output voltage is 0 - 24V, and the output current is 0 - 1A.

[0053] In this embodiment, the number of the second conductive regions 22 is one. The circuit on-off detection unit 5 is respectively connected to the circuit switching unit 4 and the second conductive region 22, and is used to detect whether the circuit loop is conducting. Specifically, as Figure 4 shown, the circuit on-off detection unit 5 includes a switch 51, a resistor 52, and an electrical quantity detection component 53. The opening and closing of the switch 51 are realized by the contact or separation of the wafer 6 and the second conductive region 22, that is, there is no actual switch, but the second conductive region 22 and the wafer 6 are used to replace the function of the switch. When the wafer 6 contacts the second conductive region 22, it is equivalent to the switch being closed; when the wafer 6 separates from the second conductive region 22, it is equivalent to the switch being opened. The electrical quantity detection component 53 is used to detect the conversion of high and low levels, or detect the change of current, or detect the change of resistance, and set a reasonable threshold to judge whether the wafer is accurately adsorbed.

[0054] Taking the detection of high and low level conversion as an example, during the process of whether the wafer 6 is accurately adsorbed, the negative electrode of the circuit on-off detection unit 5 is connected to the negative electrode of the power supply 3. When the positive electrode of the circuit on-off detection unit 5 is not connected to the power supply 3, the electrical quantity detection component 53 detects a low level; when the positive electrode is connected to the power supply 3, the electrical quantity detection component 53 detects a high level.

[0055] When the actuating member 2 adsorbs the wafer 6 to make the first conductive region 21 and the second conductive region 22 conduct, the circuit on-off detection unit 5 can detect the change of the electrical quantity in the circuit. In other words, when the actuating member 2 has not adsorbed the wafer 6, the first conductive region 21 and the second conductive region 22 will not conduct under the action of the insulating region 23, so the circuit on-off detection unit 5 will not detect the change of the electrical quantity in the circuit.

[0056] It further includes a polishing circuit 8. After the wafer 6 is transferred to the polishing table 7, the flow direction of the electro-chemical polishing current is: power supply 3, circuit switching unit 4, polishing table 7, wafer 6, power supply 3. That is, the circuit switching unit 4 can also be connected to the polishing table 7. At this time, the positive electrode of the power supply 3, the wafer 6, the polishing liquid on the polishing table 7, and the negative electrode of the power supply 3 form an energized loop to realize the electro-chemical polishing of the wafer 6.

[0057] The circuit switching unit 4 is selectively conductively connected to the circuit on-off detection unit 5 or conductively connected to the polishing circuit 8. That is, the circuit switching unit 4 is respectively connected to the detection circuit and the polishing circuit. The detection circuit includes the circuit on-off detection unit 5 and the second conductive region 22. The polishing circuit includes the polishing table 7, the wafer 6, and the first conductive region 21 of the acting member 2, which can realize the judgment of whether the wafer 6 is accurately adsorbed and the orderly progress of the electro-chemical polishing of the wafer 6 after it is judged that the wafer 6 is adsorbed by the acting member 2.

[0058] A wafer detection method for an electro-chemical polishing device includes the following steps:

[0059] The acting member 2 for adsorbing the wafer 6 at least forms a first conductive region 21 and a second conductive region 22, and the first conductive region 21 and the second conductive region 22 are isolated by an insulating region 23;

[0060] Connect one electrode of the power supply 3 to the first conductive region 21 and the other electrode of the power supply 3 to the circuit switching unit 4;

[0061] Connect the circuit on-off detection unit 5 to the circuit switching unit 4 and the second conductive region 22 respectively;

[0062] When the acting member 2 adsorbs the wafer 6, the first conductive region 21 and the second conductive region 22 are conducted, and the electrical quantity in the circuit generates a difference from the initial value when the wafer 6 is not adsorbed, and it is judged that the wafer 6 has been adsorbed by the acting member 2;

[0063] When the acting member 2 does not adsorb the wafer 6, the first conductive region 21 and the second conductive region 22 are not conducted, and the electrical quantity in the circuit is the same as the initial value when the wafer 6 is not adsorbed, and it is judged that the wafer 6 has not been adsorbed by the acting member 2.

[0064] The change of the above electrical quantity can be the conversion of high and low levels, or the change of current value, or the change of resistance value, or two or more of the conversion of high and low levels, the change of current value, and the change of resistance value.

[0065] It further includes the following steps

[0066] Form a polishing circuit 8 among the power supply 3, the circuit switching unit 4, the polishing table 7, the wafer 6, and the power supply 3;

[0067] After the wafer 6 is transferred to the polishing table 7, the circuit switching unit 4 switches from the circuit on / off detection unit 5 to the polishing circuit 8;

[0068] The power supply 3, the circuit switching unit 4, the polishing table 7, the wafer 6, and the power supply 3 form a conducting loop to achieve electrochemical mechanical polishing of the wafer 3.

[0069] Specifically, during the CMP process, when the polishing head 1 is ready to grasp the wafer 6, the circuit switching unit 4 switches the negative pole of the power supply 3 to the detection circuit for whether the wafer is accurately adsorbed, that is, switches to the circuit on / off detection unit 5, and the internal switch 51 of the circuit on / off detection unit 5 closes. After the polishing head 1 normally picks up the wafer 6, since the wafer 6 is connected to both the first conductive region 21 and the second conductive region 22 at the same time, the entire loop for detecting the wafer 6 is conducted, and the circuit on / off detection unit 5 will detect the conversion from low level to high level, thereby confirming that the wafer 6 is picked up. When the circuit on / off detection unit 5 does not detect the conversion of high and low levels, the system considers that the polishing head 1 fails to grasp the wafer 6 and sends an instruction to repeat the grasping action. During the process of the polishing head 1 carrying the wafer 6 to the polishing table 7 after successful grasping, if a chip drop occurs, the wafer detection circuit will be immediately disconnected, and the circuit on / off detection unit 5 will detect the conversion from high level to low level. After the main control system detects this signal change, it will consider that a chip drop has occurred and thus issue an alarm.

[0070] After the polishing head 1 successfully grasps the wafer 6 onto the polishing table 7, the circuit switching unit 4 switches the negative pole of the power supply 3 to the polishing table 7, and the internal switch 51 of the circuit on / off detection unit 5 disconnects. The current of the power supply 3 flows through the contact between the wafer 6 and the polishing liquid on the polishing table 7, and then flows to the negative pole of the power supply 3 to form a loop, and the process of electrochemical polishing can be started. The existence of the circuit switching unit 4 can not only save the power supply design, but also ensure that during the CMP process, the wafer detection and the electrochemical polishing process will not interfere with each other, improving the safety of the entire system.

[0071] Embodiment 2

[0072] In this embodiment, the number of the second conductive regions 22 is two or more. As Figure 6 shown, specifically, there can be three second conductive regions 22, and they are all insulated from the first conductive region 21 through the insulating region 23. As Figure 7 shown, the switching switches of the circuit switching unit 4 are two or more, and are specifically adapted to the number of the second conductive regions 22. In this embodiment, the circuit switching unit 4 is composed of a relay. The coupling effect of the relay makes the polishing circuit and the detection circuit unable to be closed at the same time, and at most one circuit can be turned on to prevent the electrical components from being short-circuited and damaged.

[0073] It further includes a control unit 9, which is used to control the conduction of the circuit switching unit 4 with the power supply 3 or with the polishing circuit 8, and to control the output magnitude of the current and voltage of the power supply 3. When in the polishing process, the control unit 9 sends an instruction to the circuit switching unit 4 to switch the circuit to the polishing circuit, and at the same time disconnects the detection circuit, making the power supply 3, the acting member 2, the wafer 6, and the polishing table 7 form a closed-loop circuit. At the same time, control the power supply 3 to output a relatively high voltage and current of 0 - 60V and 0 - 15A for electrochemical polishing. When in the wafer detection process, the circuit on-off detection unit 5 switches the circuit to the detection circuit and disconnects the polishing circuit at the same time. At this time, make the power supply 3, the acting member 2, and the circuit on-off detection unit 5 form a closed-loop circuit. Control the power supply to output a low voltage and current of 0 - 24V and 0 - 1A for detection.

[0074] A wafer detection method for an electrochemical polishing device includes the following steps:

[0075] The acting member 2 for adsorbing the wafer 6 forms a first conductive region 21 and two or more second conductive regions 22, and the first conductive region 21 and the second conductive regions 22 are isolated by an insulating region 23;

[0076] Connect one electrode of the power supply 3 to the first conductive region 21, and connect the other electrode of the power supply 3 to the circuit switching unit 4;

[0077] Connect the circuit on-off detection unit 5 to the circuit switching unit 4 and two or more second conductive regions 22 respectively;

[0078] The acting member 2 adsorbs the wafer 6, making the first conductive region 21 and two or more second conductive regions 22 conduct, and the electrical quantities at multiple places in the circuit generate differences from the initial values when the wafer 6 is not adsorbed, and it is judged that the wafer 6 is adsorbed by the acting member 2;

[0079] The acting member 2 does not adsorb the wafer 6, the first conductive region 21 and two or more second conductive regions 22 are not conductive, and the electrical quantities at multiple places in the circuit are the same as the initial values when the wafer 6 is not adsorbed, and it is judged that the wafer 6 is not adsorbed by the acting member 2.

[0080] During the CMP process, when the polishing head 1 is ready to grasp the wafer 6, the circuit switching unit 4 switches the negative pole of the power supply 3 to the detection circuit for whether the wafer is accurately adsorbed, that is, switches to the circuit on / off detection unit 5, and the internal switch 51 of the circuit on / off detection unit 5 closes. At this time, the circuit on / off detection unit 5 detects a low level. After the polishing head 1 normally picks up the wafer 6, the first conductive region 21 and the second conductive region 22 are both in contact with the wafer 6. Due to the conductive effect of the wafer 6, the first conductive region 21 of the acting member 2 and the three second conductive regions 22 will change from the isolated state to the conductive state. The circuit on / off detection unit 5 converts the detected low level in the circuit to a high level and sends a signal to the control unit 9 to confirm that the wafer 6 has been picked up. If the circuit on / off detection unit 5 does not detect the conversion from low level to high level, and the polishing head 1 has completed the grasping action, the system determines that the polishing head 1 fails to grasp the wafer 6 and sends an instruction to repeat the grasping action.

[0081] After confirming successful grasping, during the process of the polishing head 1 transporting the wafer 6 to the polishing table 7, the circuit on / off detection unit 5 will continuously detect a high level. If a wafer drop occurs, the detection circuit will immediately disconnect, and the circuit on / off detection unit 5 will detect the conversion from high level to low level. After the control unit 9 detects this signal change, it will consider that a wafer drop has occurred and thus issue an alarm.

[0082] After the polishing head 1 successfully grasps the wafer 6 onto the polishing table 7, the circuit switching unit 4 switches the circuit to the polishing circuit and disconnects the detection circuit. The current of the power supply 3 passes through the acting member 2, the wafer 6, the polishing table 7, and the polishing liquid and flows into the other pole of the power supply 3, forming a loop, that is, starting the process of electrochemical polishing. The existence of the circuit on / off detection unit 5 can not only save the cost of multiple power supplies, but also ensure that during the CMP process, the wafer detection and the electrochemical polishing process will not interfere with each other, improving the safety of the entire system.

[0083] The above specific embodiments are used to explain and illustrate the present invention, rather than to limit the present invention. Any modifications and changes made to the present invention within the spirit and scope of the claims of the present invention fall within the protection scope of the present invention.

Claims

1. A wafer detection device for an electrochemical polishing apparatus, characterized in that, it comprises: a polishing head with an acting member for adsorbing a wafer, the acting member at least including a first conductive region, a second conductive region, and an insulating region for isolating the first conductive region and the second conductive region; a power supply, one electrode of which is connected to the first conductive region and the other electrode is connected to a circuit switching unit; a circuit on / off detection unit respectively connected to the circuit switching unit and the second conductive region. When the acting member adsorbs the wafer and the first conductive region and the second conductive region are electrically connected, the circuit on / off detection unit can detect a change in the electrical quantity in the circuit.

2. The wafer detection device for an electrochemical polishing apparatus according to claim 1, characterized in that: it further comprises a polishing circuit. After it is determined that the acting member adsorbs the wafer, the flow direction of the electrochemical polishing current is: power supply, circuit switching unit, polishing table, wafer, power supply.

3. The wafer detection device for an electrochemical polishing apparatus according to claim 1, characterized in that: the circuit switching unit is a switching switch, and the number thereof is one or two or more.

4. The wafer detection device for an electrochemical polishing apparatus according to claim 1, characterized in that: the circuit on / off detection unit includes a switch, a resistor, and an electrical quantity detection member, and the opening and closing of the switch are realized by the contact or separation of the wafer and the second conductive region.

5. The wafer detection device for an electrochemical polishing apparatus according to claim 1 or 4, characterized in that: the electrical quantity includes high and low levels, current, and resistance.

6. The wafer detection device for an electrochemical polishing apparatus according to claim 1 or 3, characterized in that: the number of the second conductive regions is one or two or more.

7. The wafer detection device for an electrochemical polishing apparatus according to claim 2, characterized in that: the circuit switching unit is selectively conductively connected to the circuit on / off detection unit or to the polishing circuit.

8. The wafer detection device for an electrochemical polishing apparatus according to claim 7, characterized in that: it further comprises a control unit for controlling the circuit switching unit to be conductively connected to the power supply or to the polishing circuit, and for controlling the output magnitude of the current and voltage of the power supply.

9. The wafer detection device for an electrochemical polishing apparatus according to claim 1, characterized in that: the power supply is an adjustable power supply, its output voltage is 0 - 60V, and its output current is 0 - 15A; or the output voltage of the power supply is 0 - 24V, and its output current is 0 - 1A.

10. A wafer detection method for an electrochemical polishing apparatus, characterized in that, it comprises the following steps: an acting member for adsorbing a wafer at least forms a first conductive region and a second conductive region, and the first conductive region and the second conductive region are isolated by an insulating region; connect one electrode of the power supply to the first conductive region and the other electrode of the power supply to the circuit switching unit; connect the circuit on / off detection unit to the circuit switching unit and the second conductive region respectively; When the acting member adsorbs the wafer, the first conductive region and the second conductive region are electrically connected, and the electrical quantity in the circuit has a difference from the initial value when the wafer is not adsorbed, it is determined that the wafer has been adsorbed by the acting member; When the acting member does not adsorb the wafer, the first conductive region and the second conductive region are not electrically connected, and the electrical quantity in the circuit is the same as the initial value when the wafer is not adsorbed, it is determined that the wafer has not been adsorbed by the acting member.

11. The wafer detection method of the electrochemical polishing equipment according to claim 10, characterized in that, In the step of judging whether the wafer is adsorbed by the acting member according to whether the electrical quantity in the circuit changes, the change of the electrical quantity includes the conversion of high and low levels, and / or the change of the current value, and / or the change of the resistance value.

12. The wafer detection method of the electrochemical polishing equipment according to claim 10, characterized in that: It further includes the following steps, A polishing circuit is formed among the power supply, the circuit switching unit, the polishing table, the wafer and the power supply; After it is judged that the acting member adsorbs the wafer, the circuit switching unit switches from the circuit on-off detection unit to the polishing circuit; The power supply, the circuit switching unit, the polishing table, the wafer and the power supply form a conducting loop to realize the electrochemical mechanical polishing of the wafer.

13. The wafer detection method of the electrochemical polishing equipment according to claim 10, characterized in that: It includes the following steps, The acting member for adsorbing the wafer forms a first conductive region and two or more second conductive regions, and the first conductive region and the second conductive regions are isolated by an insulating region; One electrode of the power supply is connected to the first conductive region, and the other electrode of the power supply is connected to the circuit switching unit; The circuit on-off detection unit is respectively connected to the circuit switching unit and two or more second conductive regions; When the acting member adsorbs the wafer, the first conductive region and two or more second conductive regions are electrically connected, and the electrical quantities at multiple places in the circuit have a difference from the initial value when the wafer is not adsorbed, it is determined that the wafer is adsorbed by the acting member; When the acting member does not adsorb the wafer, the first conductive region and two or more second conductive regions are not electrically connected, and the electrical quantities at multiple places in the circuit are the same as the initial value when the wafer is not adsorbed, it is determined that the wafer has not been adsorbed by the acting member.

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