Memristor and preparation method and application thereof

Abstract

The application discloses a memristor and a preparation method and application thereof, and relates to the field of microelectronic technology.The memristor comprises a first electrode and a second electrode, and a dielectric layer between the first electrode and the second electrode, wherein the dielectric layer comprises poly[6-(2-ethylhexyl)-1,2,5-thiadiazole(3,4-F)benzotriazole-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-diketone].The memristor provided by the application is based on a stable charge transfer process instead of ion migration behavior of a conductive wire type memristor, has low transition dispersion, excellent consistency and temperature stability, and has good stability and reliability in a wide temperature range, can maintain stable memristor performance in a wide temperature range of 153K to 573K, and can still maintain normal operation after being stored for seven months in a normal temperature environment.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of microelectronics, in particular to a memristor and a preparation method and application thereof. BACKGROUND

[0002] As a key device for next-generation information storage and processing, the memristor has attracted extensive attention, and certain progress has been made in the research and application of conductive filament type memristors. Such memristors regulate resistance states through ion migration, and their typical characteristics include high data density, fast switching speed, and low power consumption. However, the ion migration-based memristor has the following shortcomings: first, the randomness of ion migration leads to high dispersion of memristor resistance transition, limiting the preparation of large-scale arrays. Second, the ion migration process is significantly affected by temperature changes. In extreme environments, such as high-temperature or low-temperature environments, the formation and rupture of conductive filaments exhibit significant instability, directly leading to degradation or even failure of the performance of the memristor.

[0003] Currently reported conductive filament type memristors can usually only work within a narrow temperature range, which cannot meet the demand for ultra-wide working temperature range in some special fields. This temperature limitation greatly hinders the practical application of memristors in aerospace, geothermal energy, and military, etc. extreme environments. In addition, phenomena such as thermal mismatch under high-temperature conditions and ion freezing under low-temperature conditions further exacerbate the instability of the performance of the conductive filament type memristor.

[0004] Therefore, the prior art still needs to be improved and developed. SUMMARY

[0005] Based on the deficiencies of the prior art described above, the purpose of the present application is to provide a memristor and a preparation method and application thereof, aiming to provide a memristor capable of having good stability within a wide temperature range.

[0006] The technical solutions of the present application are as follows:

[0007] In a first aspect of the present application, a memristor is provided, wherein the memristor comprises a first electrode and a second electrode, and a dielectric layer located between the first electrode and the second electrode, the dielectric layer comprising poly[6-(2-ethylhexyl)-1,2,5 thiazole(3,4-F) benzene triazole-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-diketone].

[0008] Optionally, the first electrode comprises at least one of indium tin oxide, copper, nickel, lithium, and sodium.

[0009] Optionally, the second electrode comprises at least one of gold, aluminum, platinum, titanium, graphene, and fluorine-doped tin dioxide.

[0010] Optionally, the memristor further comprises a substrate, the substrate is located on the side of the first electrode away from the dielectric layer.

[0011] Optionally, the substrate comprises one of a glass substrate, a silicon oxide substrate, a mica substrate, a quartz substrate and a polyethylene terephthalate substrate.

[0012] In a second aspect of the present application, a method for preparing a memristor is provided, comprising the following steps:

[0013] providing a first electrode or a substrate with a first electrode on the surface;

[0014] forming a dielectric layer on the first electrode, the dielectric layer comprising poly[6-(2-ethylhexyl)-1,2,5-thiadiazolo(3,4-F)benzotriazolo-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-dione];

[0015] forming a second electrode on the dielectric layer to obtain the memristor.

[0016] Optionally, the step of forming the dielectric layer on the first electrode specifically comprises:

[0017] adding poly[6-(2-ethylhexyl)-1,2,5-thiadiazolo(3,4-F)benzotriazolo-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-dione] into an organic solvent to obtain a mixed solution;

[0018] coating the mixed solution on the first electrode, and annealing in an inert atmosphere to form the dielectric layer.

[0019] Optionally, the step of forming the dielectric layer on the first electrode specifically comprises:

[0020] adding poly[6-(2-ethylhexyl)-1,2,5-thiadiazolo(3,4-F)benzotriazolo-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-dione] into an organic solvent to obtain a mixed solution;

[0021] after ultraviolet ozone treatment of the substrate with the first electrode on the surface, coating the mixed solution on the first electrode, and annealing in an inert atmosphere to form the dielectric layer.

[0022] Optionally, the step of forming the second electrode on the dielectric layer specifically comprises:

[0023] depositing at least one of gold, aluminum, platinum, titanium, graphene and fluorine-doped tin dioxide on the dielectric layer to form the second electrode.

[0024] The annealing temperature is 145-155℃, and the annealing time is 55-65min.

[0025] In a third aspect, the application provides application of the memristor prepared by the preparation method of the application in fuzzy image recognition at different working temperatures.

[0026] Beneficial effects: the memristor provided by the application has low transition dispersion, excellent consistency and temperature stability, and multi-bit storage capacity, and can work in a wide temperature range, has good stability and reliability in a wide temperature range, can maintain stable memristor performance in a wide temperature range of 153K to 573K, and can still maintain normal operation after being stored for seven months in a normal temperature environment. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 It is a schematic diagram of the cross-sectional structure of the memristor.

[0028] Figure 2 It is a schematic diagram of the preparation process of the memristor.

[0029] Figure 3 It is a gel permeation chromatogram of TBZT-DPP prepared in Example 1.

[0030] Figure 4 It is an infrared absorption spectrum of TBZT-DPP prepared in Example 1.

[0031] Figure 5 It is a voltage sweep test result graph of the memristor in Example 1.

[0032] Figure 6 It is a temperature stability test result graph of the memristor in Example 1, wherein (a) is the current-time curve of the memristor treated at-120℃, (b) is the current-time curve of the memristor treated at 100℃, (c) is the current-time curve of the memristor treated at 200℃, and (d) is the current-time curve of the memristor treated at 300℃.

[0033] Figure 7 It is a resistance transition consistency result graph of the memristor in Example 1, wherein (a) is the current-time curve from the 1st cycle to the 4th cycle, (b) is the current-time curve from the 5th cycle to the 8th cycle, (c) is the current-time curve from the 9th cycle to the 12th cycle, and (d) is the current-time curve from the 13th cycle to the 16th cycle. DETAILED DESCRIPTION

[0034] The present application provides a memristor and a preparation method and application thereof. To make the purpose, technical solutions and effects of the present application clearer and more explicit, the present application is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terminology used in the description of the present application only for the purpose of describing specific embodiments and is not intended to limit the present application.

[0036] If the present application embodiments involve the description of "first", "second", etc., the description of "first", "second", etc. is only for the purpose of description and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features.

[0037] The existing conductive wire type memristor still faces severe challenges in environmental adaptability, etc. In particular, how to ensure the stability and reliability of the device in a wide temperature range has become a key difficulty in the current development of memristor technology. Based on this, the present application embodiments provide a memristor (a gradual change type memristor based on charge transfer), wherein, as shown in Figure 1 The memristor includes a first electrode 1 and a second electrode 2, and a dielectric layer 3 located between the first electrode 1 and the second electrode 2, the dielectric layer includes poly[6-(2-ethylhexyl)-1,2,5 thiazole (3,4-F) benzotriazole-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-diketone] (denoted as TBZT-DPP), the structural formula of TBZT-DPP is n is the degree of polymerization.

[0038] In the embodiment of the present application, the TBZT-DPP in the medium layer is a kind of acceptor-acceptor conjugated polymer, and under the action of electric field, electrons will migrate between acceptors in the TBZT-DPP main chain to form an excited state, which brings an increase in effective carriers, causing the memristor to change from a low conductive state to a high conductive state (i.e. by optimizing the selection of acceptors and enhancing intermolecular stacking, the memristor realizes the gradual resistance switching characteristic). Therefore, the memristor provided by the embodiment of the present application uses a stable charge transfer process instead of the ion migration behavior of the conductive filament type memristor, has low transition dispersion, thereby effectively regulating the charge transport in the medium layer. This charge transfer mechanism ensures the excellent consistency and stability of the memristor under electrical stimulation, significantly reduces the fluctuation of the operating voltage, and has multi-bit storage capacity. Therefore, the memristor of the present application has excellent consistency, temperature stability, environmental stability and environmental adaptability (i.e. wide working temperature range), and can maintain stable memristor performance in a wide temperature range of 153 K to 573 K (i.e. -120℃ to 300℃), and can still operate normally after being stored for seven months at room temperature.

[0039] In summary, the memristor provided by the embodiment of the present application has the following characteristics:

[0040] Wide temperature range working capability: the memristor can work stably in a super wide temperature range of 153 K to 573 K, which significantly widens the applicability of the memristor in extreme environments, and is suitable for special application fields such as aerospace, geothermal energy and military.

[0041] Excellent device consistency: compared with the existing conductive filament type memristor, the present application uses a charge transfer mechanism to avoid the instability of ion migration, realizes better spatiotemporal consistency, has small switching voltage fluctuation, and has good device uniformity.

[0042] Reliable environmental stability: after high and low temperature treatment, the memristor performance is almost not affected; after being stored at room temperature for seven months, it can still operate normally, showing excellent long-term stability.

[0043] Multifunctional application potential: due to its good stability and consistency, the memristor is particularly suitable for application in fuzzy image recognition at different working temperatures.

[0044] In the embodiment, the first electrode, the medium layer and the second electrode are sequentially stacked.

[0045] In some embodiments, the first electrode includes at least one of indium tin oxide (ITO), copper and nickel, but is not limited thereto.

[0046] In some embodiments, the second electrode comprises at least one of gold, aluminum, platinum, titanium, graphene, and fluorine-doped tin dioxide (FTO), but is not limited thereto.

[0047] In some embodiments, as shown in FIG. 1, the memristor further comprises a substrate 4 located on the side of the first electrode 1 away from the dielectric layer 3. Figure 1

[0048] In some embodiments, the substrate comprises one of a glass substrate, a silicon oxide substrate, a mica substrate, a quartz substrate, and a polyethylene terephthalate (PET) substrate, but is not limited thereto.

[0049] The present application also provides a method for preparing a memristor, comprising the following steps S11-S13:

[0050] S11, providing a first electrode; the material of the first electrode is described above and will not be repeated here.

[0051] S12, forming a dielectric layer on the first electrode, wherein the dielectric layer comprises TBZT-DPP.

[0052] In some embodiments, the step of forming a dielectric layer on the first electrode specifically comprises:

[0053] adding TBZT-DPP to an organic solvent to obtain a mixed solution;

[0054] coating the mixed solution on the first electrode, and forming a dielectric layer after annealing in an inert atmosphere.

[0055] The organic solvent comprises at least one of o-dichlorobenzene, chlorobenzene, and toluene, but is not limited thereto.

[0056] The coating method is spin coating, drop coating, or blade coating, etc.

[0057] The annealing temperature is 145-155℃, for example, it can be 145℃, 146℃, 147℃, 148℃, 149℃, 150℃, 151℃, 152℃, 153℃, 154℃, or 155℃, etc.; the annealing time is 55-65min, for example, it can be 55min, 56min, 57min, 58min, 59min, 60min, 61min, 62min, 63min, 64min, or 65min, etc.

[0058] ​The preparation method of the TBZT-DPP is as follows: after Stille coupling reaction of [2,5-bis(2-octyldodecyl)-3,6-bis(5-(trimethyltinyl)thiophene-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione] (DPP2T-2Sn) and [4,8-dibromo-6-(2-ethylhexyl)-[1,2,5]thiadiazolo[3,4-F]benzo-triazole] (TBZ-2Br), the TBZT-DPP is obtained. The DPP2T-2Sn and the TBZ-2Br have different charge attraction capabilities, and can form a pair of acceptor-acceptor molecules.

[0059] S13, forming a second electrode on the medium layer to obtain the memristor.

[0060] In some embodiments, the step of forming a second electrode on the medium layer in the step specifically comprises:

[0061] depositing at least one of gold, aluminum, platinum, titanium, graphene and FTO on the medium layer to form the second electrode.

[0062] The application also provides a preparation method of a memristor, which comprises the following steps S21 to S22.

[0063] S21, providing a substrate with a first electrode on the surface;

[0064] In the step, the materials of the first electrode and the substrate are as described above and will not be repeated here.

[0065] S22, forming a medium layer on the first electrode, wherein the medium layer comprises TBZT-DPP;

[0066] In some embodiments, the step of forming a medium layer on the first electrode in the step specifically comprises:

[0067] adding the TBZT-DPP into an organic solvent to obtain a mixed solution;

[0068] coating the mixed solution on the first electrode after ultraviolet ozone treatment of the substrate with the first electrode on the surface, and annealing under an inert atmosphere to form the medium layer.

[0069] The temperature and time of annealing are as described above and will not be repeated here.

[0070] After ozone treatment, spin coating on the substrate with the first electrode on the surface can make the film more dense, and without ozone treatment, the film forming effect will be poor.

[0071] S23, forming a second electrode on the medium layer to obtain the memristor.

[0072] The specific method for forming the second electrode on the medium layer in this step is described above, and will not be repeated here.

[0073] The application also provides an application of the memristor as described above or prepared by the preparation method as described above in fuzzy image recognition at different working temperatures.

[0074] The application will be further described below through specific examples.

[0075] Example 1

[0076] Preparation of TBZT-DPP (reference to the preparation method in Bioinspired near-infrared light-induced ultrafast soft actuators with tunable deformation and motion based on conjugated polymers / liquid crystal elastomers, Zhenjia Huang, Gary Chi-Pong Tsui, Yu Deng, Chak-Yin Tang, Mo Yang, Miao Zhang and Wai-Yeung Wong, J. Mater. Chem. C, 2022, 10, 12731-12740), including the following steps:

[0077]

[0078] According to the above synthetic route, 0.15 mmol of DPP2T-2Sn and 0.15 mmol of TBZ-2Br were dissolved in 6 mL of anhydrous toluene under nitrogen protection, and then 10 mg of Pd(PPh3)4 (tetrakis(triphenylphosphine)palladium) was added to obtain a mixture;

[0079] The above mixture was heated under reflux conditions (100℃) for 48 h. After the reaction was completed, the reaction mixture was cooled to room temperature, and the solvent was removed under reduced pressure;

[0080] The crude product was recrystallized using dichloromethane as a good solvent and methanol as a poor solvent. After recrystallization, a purple black crude powder was obtained by filtration. Subsequently, the crude product was purified by Soxhlet extraction in the following order: methanol, acetone and n-hexane were used to extract impurities in sequence.

[0081] Next, a Soxhlet extraction is performed using chloroform as a solvent to obtain a desired polymer solution, the obtained polymer solution is subjected to a distillation under reduced pressure to remove part of the solvent, and then an appropriate amount of methanol is added to precipitate the product. Finally, the target polymer TBZT-DPP is obtained by filtration.

[0082] The preparation of a memristor, as shown in Figure 2 includes the following steps:

[0083] (1) A glass substrate with a size of 2 cm x 2 cm containing an ITO electrode on the surface (wherein the thickness of the ITO electrode is 185 nm) is placed in anhydrous ethanol, and ultrasonic cleaning is performed for 10 min, then dried with nitrogen and dried for standby;

[0084] (2) The glass substrate with the ITO electrode on the surface cleaned in step (1) is subjected to ultraviolet ozone treatment (UVO);

[0085] (3) The TBZT-DPP prepared above is added to o-dichlorobenzene to obtain a mixture with a TBZT-DPP concentration of 15 mg / mL; then the mixture is added dropwise to the surface of the glass substrate containing the ITO electrode obtained in step (2), spin-coated into a film, and then annealed at 150°C for 1 h in a nitrogen environment to obtain a stable organic active layer (thickness of 145 nm), i.e. a dielectric layer.

[0086] (4) A 50 nm thick gold electrode is prepared on the above substrate using a mask and a thermal evaporation method at a deposition rate of .

[0087] Example 2

[0088] The preparation of a memristor includes the following steps:

[0089] (1) A glass substrate with a size of 2 cm x 2 cm containing a copper electrode on the surface (wherein the thickness of the copper electrode is 185 nm) is placed in anhydrous ethanol, and ultrasonic cleaning is performed for 10 min, then dried with nitrogen and dried for standby;

[0090] (2) The glass substrate with the copper electrode on the surface cleaned in step (1) is subjected to ultraviolet ozone treatment;

[0091] (3) The TBZT-DPP prepared in Example 1 is added to chlorobenzene to obtain a mixture with a TBZT-DPP concentration of 15 mg / mL; then the mixture is added dropwise to the surface of the glass substrate containing the copper electrode obtained in step (2), spin-coated into a film, and then annealed at 150°C for 1 h in a nitrogen environment to obtain a stable organic active layer (thickness of 145 nm), i.e. a dielectric layer.

[0092] (4) Using a mask plate, a 50 nm thick platinum electrode was prepared on the above substrate by a thermal evaporation method at a deposition rate of 0.1 nm / s. (4) Using a mask plate, a 50 nm thick platinum electrode was prepared on the above substrate by a thermal evaporation method at a deposition rate of 0.1 nm / s.

[0093] Example 3

[0094] Preparation of the memristor, comprising the following steps:

[0095] (1) A mica substrate with a nickel electrode (wherein the thickness of the nickel electrode is 185 nm) having a size of 2 cm x 2 cm was placed in anhydrous ethanol and ultrasonically cleaned for 10 min, then dried with nitrogen and dried for standby use;

[0096] (2) The mica substrate with a nickel electrode cleaned in step (1) was subjected to ultraviolet ozone treatment;

[0097] (3) The TBZT-DPP prepared in Example 1 was added to chlorobenzene to obtain a mixture with a TBZT-DPP concentration of 15 mg / mL; then the mixture was added dropwise to the surface of the side of the mica substrate with a nickel electrode obtained in step (2), spin-coated into a film, and then annealed at 150°C for 1 h in a nitrogen environment to obtain a stable organic active layer (thickness of 145 nm), i.e. a dielectric layer.

[0098] (4) Using a mask plate, a 50 nm thick platinum electrode was prepared on the above substrate by a thermal evaporation method at a deposition rate of 0.1 nm / s. (4) Using a mask plate, a 50 nm thick platinum electrode was prepared on the above substrate by a thermal evaporation method at a deposition rate of 0.1 nm / s.

[0099] Test:

[0100] (1) Gel permeation chromatography (GPC) test was performed on the TBZT-DPP prepared in Example 1, and the results are shown in Figure 3 and Table 1.

[0101] Table 1, Molecular weight and dispersity index results of TBZT-DPP

[0102]

[0103] (2) Infrared spectroscopy test was performed on the TBZT-DPP prepared in Example 1, and the results are shown in Figure 4 .

[0104] (3) The electrical properties of the memristor in Example 1 were evaluated using a semiconductor parameter analyzer combined with a probe station, as follows:

[0105] Test 1: Voltage sweep was performed on the memristor, and the current change was recorded. The scanning method was: 0 V (volts)→2 V→0 V, with a step frequency of 10 mV (millivolts), and continuous scanning was performed 10 times. Subsequently, the voltage sweep direction was changed: 0 V→-2 V→0 V, with a step frequency of 10 mV, and continuous scanning was performed 10 times. The change in current during the voltage sweep was observed, and the results are shown in Figure 5 . It can be seen that the peak current of the memristor increased from 0.2 mA (milliamperes) to more than 0.4 mA in the positive direction, and the current of the memristor gradually returned to the initial state in the negative direction. The results show that the device has a charge accumulation effect, and it is also a non-volatile device.

[0106] Test 2: The memristor was heated for 30 min under an oxygen-free environment using a heating platform at temperatures of 100°C, 200°C, and 300°C, respectively; and the memristor was subjected to low-temperature treatment for 30 min using a low-temperature probe station at a temperature of -120°C. Then, at room temperature, the memristor subjected to different temperature treatments was subjected to pulse excitation, and the current change was recorded. The pulse amplitude was 3 V, the read voltage was 0.1 V, the pulse width was 5 ms (milliseconds), the pulse interval was 5 ms, and the number of pulses was 25. The electrical performance of the memristor was evaluated, and the temperature stability of the memristor was evaluated.

[0107] The results are shown in Figure 6 . The results show that the conductance transition behavior of the polymer under pulse excitation is basically consistent at different temperatures, the memristor has excellent temperature stability, and has the ability to work in a wide temperature range.

[0108] Test 3: Under the same temperature conditions, the resistance transition consistency of the memristor was evaluated using multi-pulse excitation. At room temperature (25°C), the pulse excitation conditions were: pulse amplitude of 2 V, pulse time of 5 ms, pulse interval of 5 ms, and number of pulses of 10. This pulse excitation test was repeated, the evolution of the conductance between different cycles was compared, and the transition consistency of the memristor was evaluated. The results are shown in Figure 7 . According to the results, the resistance transition behavior is basically consistent between different cycles, proving that the resistance transition dispersion of the memristor is low, which is beneficial to the construction of a large-scale array.

[0109] Test 4: The memristor was stored at room temperature for 7 months, and the memristor still functioned normally.

[0110] In summary, the present application provides a memristor and a preparation method and application thereof, the memristor provided by the present application is based on a stable charge transfer process instead of ion migration behavior of a conductive wire type memristor, has low transition dispersion, excellent consistency and temperature stability, and multi-bit storage capacity, and has good stability and reliability in a wide temperature range, can maintain stable memristor performance in a wide temperature range of 153K to 573K, and can still maintain completely normal operation after being stored for seven months in a normal temperature environment.

[0111] It should be understood that the application of the present application is not limited to the above examples, and can be improved or changed by those skilled in the art according to the above description, and all these improvements and changes shall belong to the protection scope of the appended claims of the present application.

Claims

1. A memristor, characterized by, The memristor comprises a first electrode and a second electrode, and a dielectric layer between the first electrode and the second electrode, wherein the dielectric layer comprises poly[6-(2-ethylhexyl)-1,2,5-thiadiazolo(3,4-F)benzotriazolo-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-dione].

2. The memristor of claim 1, wherein, The first electrode comprises at least one of indium tin oxide, copper, nickel, lithium and sodium.

3. The memristor according to claim 1 or 2, characterized in that The second electrode comprises at least one of gold, aluminum, platinum, titanium, graphene and fluorine-doped tin dioxide.

4. The memristor of claim 3, wherein, The memristor further comprises a substrate, wherein the substrate is located on a side of the first electrode away from the dielectric layer.

5. The memristor of claim 4, wherein, The substrate comprises one of a glass substrate, a silicon oxide substrate, a mica substrate, a quartz substrate and a polyethylene terephthalate substrate.

6. A method of manufacturing a memristor, characterized by, The method comprises the following steps: providing a first electrode or a substrate containing the first electrode on a surface; forming a dielectric layer on the first electrode, wherein the dielectric layer comprises poly[6-(2-ethylhexyl)-1,2,5-thiadiazolo(3,4-F)benzotriazolo-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-dione]; forming a second electrode on the dielectric layer to obtain the memristor.

7. The production method according to claim 6, characterized by, The step of forming the dielectric layer on the first electrode specifically comprises: adding poly[6-(2-ethylhexyl)-1,2,5-thiadiazolo(3,4-F)benzotriazolo-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-dione] into an organic solvent to obtain a mixed solution; coating the mixed solution on the first electrode, and annealing in an inert atmosphere to form the dielectric layer.

8. The preparation method according to claim 6, characterized in that, The step of forming the dielectric layer on the first electrode specifically comprises: adding poly[6-(2-ethylhexyl)-1,2,5-thiadiazolo(3,4-F)benzotriazolo-2,5-bis(2-octyldodecyl)-2,5-dihydropyrrolo(3,4-c)pyrrole-1,4-dione] into an organic solvent to obtain a mixed solution; after ultraviolet ozone treatment of the substrate containing the first electrode on a surface, coating the mixed solution on the first electrode, and annealing in an inert atmosphere to form the dielectric layer.

9. The production method according to claim 7 or 8, characterized by, The step of forming the second electrode on the dielectric layer specifically comprises: depositing at least one of gold, aluminum, platinum, titanium, graphene and fluorine-doped tin dioxide on the dielectric layer to form the second electrode; the annealing temperature is 145-155℃, and the annealing time is 55-65min.

10. Use of the memristor of any one of claims 1-5 or the memristor prepared by the preparation method of any one of claims 6-9 in fuzzy image recognition at different working temperatures.

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