High-integration-level hybrid integrated packaging MEMS (Micro Electro Mechanical System) chip

Abstract

The invention provides a high-integration-level hybrid integrated packaging MEMS chip. The high-integration-level hybrid integrated packaging MEMS chip comprises a metal-ceramic tube shell, MEMS chips connected to different heights in the metal-ceramic tube shell, a hybrid integrated circuit and a metal cover plate in airtight packaging with the metal-ceramic tube shell. The side wall of the metal-ceramic tube shell adopts a three-layer step structure to form a multi-layer trapezoidal inner cavity, and metal inner bonding fingers are distributed on a bottom step and are used for connecting MEMS chip signals; metal outer bonding fingers are distributed on the middle step and are used for connecting hybrid integrated circuit signals; a metal ring frame structure of the metal-ceramic tube shell is arranged on the top step; and the corresponding inner and outer bonding fingers are interconnected pairwise. According to the invention, the MEMS chip is directly or indirectly fixed at the bottom of the inner cavity of the metal-ceramic tube shell by combining the material characteristics of the MEMS chip, the highly integrated packaging of the MEMS chip and the hybrid integrated circuit is realized by customizing the metal-ceramic tube shell, and an integrated packaging scheme of miniaturization and airtight packaging is provided for the MEMS chip.

Description

Technical Field

[0001] The present invention relates to the technical field of electrical components, and particularly to a highly integrated hybrid integrated packaged MEMS chip. Background Art

[0002] Hybrid integrated packaging refers to a technology in which monolithic integrated circuits, discrete devices or micro-components are hybrid assembled on substrates such as thick films, thin films or in the same cavity to form a complete system function. This technology can solve the problem of incompatibility of semiconductor materials and semiconductor processes, and is an integrated packaging means for active and passive devices and functional devices to achieve high density, miniaturization and high reliability.

[0003] Currently, there are mainly three types of packaging forms for hybrid integrated circuits: metal packaging, ceramic packaging and plastic packaging. Metal packaging has high reliability, good heat dissipation, good airtightness and high cost; ceramic packaging has good reliability and heat dissipation, good airtightness and low cost; plastic packaging has poor airtightness and the lowest cost.

[0004] The existing packaging of MEMS chips is basically planar packaging. The MEMS chip, ASIC chip, resistor and capacitor are all directly mounted on the same horizontal plane of the carrier, and VGA and Flash are also directly pasted on the chip surface. The MEMS chip is affected by interference introduced by external factors such as lead distributed capacitance, dust, water vapor and other pollutants, as well as external circuit noise. Therefore, a new packaged chip is needed. Summary of the Invention

[0005] The present invention is to solve the interference problem of MEMS chip packaging, and provides a highly integrated hybrid integrated packaged MEMS chip, which integrates a hybrid integrated circuit and a MEMS chip in the same package cavity, helping to solve the interference introduced by external factors such as lead distributed capacitance, dust, water vapor and other pollutants, as well as external circuit noise for the MEMS chip.

[0006] The present invention provides a highly integrated hybrid integrated packaged MEMS chip, including a metal-ceramic package, a MEMS chip, a hybrid integrated circuit connected at different heights inside the metal-ceramic package, and a metal cover plate hermetically packaged with the metal-ceramic package;

[0007] The metal-ceramic package includes a ceramic base with multiple layers of trapezoidal inner cavities inside, a metal ring frame structure connected to the top step of the ceramic base, metal inner bonding fingers connected to the bottom step of the ceramic base, metal outer bonding fingers connected to the middle step of the ceramic base, and pad pins connected to the outer bottom of the ceramic base;

[0008] The MEMS chip is connected to the bottom of the inner cavity of the ceramic base and bonded to the metal inner bonding fingers through metal wires. The metal inner bonding fingers transmit MEMS signals. The hybrid integrated circuit is connected to the middle step of the ceramic base and bonded to the metal outer bonding fingers through metal wires. The metal outer bonding fingers transmit hybrid integrated circuit signals. The metal inner bonding fingers are interconnected in pairs with the corresponding metal outer bonding fingers and conduct electricity in one-to-one correspondence with the pad pins. The pad pins transmit signals externally. The bottom of the metal ring frame structure is welded to the top step of the ceramic base, and the top is hermetically welded to the metal cover plate.

[0009] For a highly integrated hybrid integrated packaged MEMS chip according to the present invention, as a preferred embodiment, the MEMS chip can be directly bonded to the bottom of the inner cavity of the metal-ceramic package, or indirectly fixed to the bottom of the inner cavity of the metal-ceramic package through a stress isolation block. The stress isolation block is connected between the MEMS chip and the bottom of the inner cavity of the metal-ceramic package to reduce the influence of temperature and structural stress.

[0010] For a highly integrated hybrid integrated packaged MEMS chip according to the present invention, as a preferred embodiment, the hybrid integrated circuit includes an ASIC bare chip, resistor-capacitor components, and a ceramic substrate. The ASIC chip is bonded to the ceramic circuit substrate, the resistor-capacitor components are welded to the ceramic circuit substrate, and the ceramic circuit substrate is bonded to the middle step on the side of the ceramic base where no metal outer bonding fingers are provided.

[0011] For a highly integrated hybrid integrated packaged MEMS chip according to the present invention, as a preferred embodiment, the curing temperatures of the adhesive for the MEMS chip, the adhesive for the ASIC bare chip, and the adhesive for the ceramic circuit substrate are all different;

[0012] The curing temperature of the adhesive for the ceramic circuit substrate is lower than the curing temperature of the adhesive for the MEMS chip.

[0013] For a highly integrated hybrid integrated packaged MEMS chip according to the present invention, as a preferred embodiment, the material of the metal cover plate is kovar alloy;

[0014] The metal cover plate includes a central region of the cover plate structure and an edge connected to the periphery of the central region of the cover plate structure. The thickness of the central region of the cover plate structure is greater than the thickness of the edge;

[0015] The edge is connected to the metal ring frame structure through a parallel weld.

[0016] For a highly integrated hybrid integrated packaged MEMS chip according to the present invention, as a preferred embodiment, the numbers of the metal inner bonding fingers, the metal outer bonding fingers, and the pad pins are all the same, and the metal inner bonding fingers and the metal outer bonding fingers are arranged in pairs.

[0017] A highly integrated hybrid integrated packaged MEMS chip according to the present invention. As a preferred embodiment, the material of the ceramic base is alumina. The metal inner bonding fingers, metal outer bonding fingers and pad pins are fabricated by electroforming. The metal inner bonding fingers are interconnected pairwise and conductively connected to the pad pins one by one through a multi-layer ceramic processing method.

[0018] A highly integrated hybrid integrated packaged MEMS chip according to the present invention. As a preferred embodiment, the preparation method of the highly integrated hybrid integrated packaged MEMS chip includes the following steps:

[0019] S1. Design the hybrid integrated circuit. Then, design the planar dimensions of the metal-ceramic package according to the sizes of the MEMS chip and the hybrid integrated circuit. Combine the thickness of the MEMS chip, the arc height of the metal wire, the thickness of the ASIC bare chip, the discrete resistor-capacitor devices, the thickness of the ceramic circuit substrate, and the height of the metal cover to design the height dimensions of the metal-ceramic package, and fabricate the metal-ceramic package.

[0020] S2. Fix the MEMS chip directly or indirectly at the bottom of the inner cavity of the ceramic base.

[0021] S3. Connect the pad electrodes on the MEMS chip and the inner bonding fingers with metal wires.

[0022] S4. Solder the discrete resistor-capacitor devices to the ceramic circuit substrate. Then, bond the ASIC bare chip at the corresponding position on the ceramic circuit substrate. Next, fix the hybrid integrated circuit on the middle step of the ceramic base by gluing. Connect the ASIC bare chip and the ceramic circuit substrate at the corresponding solder joints. Finally, connect the pad on the ceramic circuit substrate and the outer bonding fingers with metal wires.

[0023] S5. Place the metal cover on the metal ring frame for hermetic packaging, and a highly integrated hybrid integrated packaged MEMS chip is completed.

[0024] A highly integrated hybrid integrated packaged MEMS chip according to the present invention. As a preferred embodiment, bond the MEMS chip and the inner bonding fingers by gold wire ball bonding.

[0025] In step S4, connect the ASIC bare chip and the ceramic circuit substrate by gold wire ball bonding.

[0026] In step S5, place the metal cover on the metal ring frame for hermetic packaging by parallel seams, so that the MEMS chip and the electronic components of the hybrid integrated circuit work under hermetic nitrogen or other protective gas atmospheres.

[0027] A highly integrated hybrid integrated packaged MEMS chip according to the present invention. As a preferred embodiment, directly bond the sensitive structure of the MEMS chip to the bottom of the inner cavity of the ceramic base.

[0028] Or the MEMS chip is installed indirectly through a stress isolation block: first, the lower surface of the stress isolation block is bonded to the bottom of the inner cavity of the ceramic base, and then the MEMS chip is bonded to the upper surface of the stress isolation block.

[0029] The present invention discloses a high-integration hybrid integration packaging design scheme for a MEMS chip, including a MEMS chip, a hybrid integrated circuit, a metal-ceramic package, and a metal cover plate. The side wall of the metal-ceramic package adopts a three-layer stepped structure to form a multi-layer trapezoidal inner cavity. Metal inner bonding fingers are distributed on the bottom step for connecting the signals of the MEMS chip; metal outer bonding fingers are distributed on the middle step for connecting the signals of the hybrid integrated circuit; the top step is a metal ring frame structure of the metal-ceramic package; the corresponding inner and outer bonding fingers are interconnected in pairs, and the inner and outer bonding fingers are in one-to-one correspondence and conduction with the bottom pins of the metal-ceramic package. Combining with the material characteristics of the MEMS chip, it is directly or indirectly fixed to the bottom of the inner cavity of the metal-ceramic package. The hybrid circuit includes an ASIC bare chip, discrete resistor-capacitor devices, and a ceramic circuit board. The discrete resistor-capacitor devices are soldered to the ceramic circuit board, the ASIC bare chip is bonded to the ceramic circuit board using an adhesive, and the ceramic circuit board is fixed to the middle step layer of the metal-ceramic package by gluing. The electrode pads on the MEMS chip are connected to the inner bonding fingers through metal wires, and the signals on the hybrid circuit board are connected to the outer bonding fingers. Due to the conductivity of the corresponding inner and outer bonding fingers of the metal-ceramic package, the electrical connection between the MEMS chip and the hybrid integrated circuit is realized, and the signals are input and output externally through the bottom pins of the metal-ceramic package. The metal cover plate is placed on the metal ring frame of the metal-ceramic package, and a hermetic packaging structure is formed by parallel seam welding. The present invention realizes the high-integration packaging of the MEMS chip and the hybrid integrated circuit by customizing the metal-ceramic package, and provides an integrated packaging solution for miniaturization and hermetic packaging of the MEMS chip.

[0030] The present invention has the following advantages:

[0031] (1) The present invention mainly includes a metal-ceramic package, a MEMS chip, a hybrid integrated circuit, and a metal cover plate. By using technologies such as the three-layer steps of the customized metal-ceramic package, the interconnection of the inner and outer bonding fingers in pairs, and parallel seam welding, the MEMS chip and the hybrid integrated circuit are hermetically assembled together in the above metal-ceramic package to isolate the MEMS chip and the circuit from the external environment, improving the stability and reliability of the sensor.

[0032] (2) The ceramic-metal package of the present invention adopts a multi-layer stepped structure. A number of metal bonding fingers are arranged on the steps according to functions. Through the ceramic package processing technology, the metal bonding fingers on different layers of steps are interconnected pairwise inside the ceramic package. This design can flexibly solve the electrical connection problem between the MEMS chip and the hybrid circuit.

[0033] (3) In the present invention, by using three adhesives with different curing temperatures, the asynchronous installation of the MEMS chip, ASIC bare chip, and ceramic circuit board is completed. Description of the Drawings

[0034] Figure 1 It is a sectional view of the package structure of a highly integrated hybrid integrated packaged MEMS chip;

[0035] Figure 2 It is an internal structure diagram of the metal-ceramic package of a highly integrated hybrid integrated packaged MEMS chip;

[0036] Figure 3 It is a bottom structure diagram of the metal-ceramic package of a highly integrated hybrid integrated packaged MEMS chip;

[0037] Figure 4 It is a structure diagram of the metal cover plate of a highly integrated hybrid integrated packaged MEMS chip;

[0038] Figure 5 It is a ball bonding schematic diagram of the ASIC bare chip of a highly integrated hybrid integrated packaged MEMS chip;

[0039] Figure 6 It is a ball bonding schematic diagram of the hybrid integrated circuit of a highly integrated hybrid integrated packaged MEMS chip;

[0040] Figure 7 It is a flowchart of the manufacturing method of a highly integrated hybrid integrated packaged MEMS chip.

[0041] Reference Signs:

[0042] 1. Metal-ceramic package; 11. Ceramic base; 12. Metal ring frame structure; 13. Inner metal bonding finger; 14. Outer metal bonding finger; 15. Pad pin; 2. MEMS chip; 21. Stress isolation block; 3. Hybrid integrated circuit; 31. ASIC bare chip; 32. Resistor-capacitor device; 33. Ceramic circuit board; 4. Metal cover plate; 41. Central region of the cover plate structure; 42. Edge. Detailed Embodiments

[0043] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.

[0044] Embodiment 1

[0045] As Figures 1 to 6 shown, a highly integrated hybrid integrated packaged MEMS chip includes a metal-ceramic package 1, a MEMS chip 2, a hybrid integrated circuit 3, and a metal cover plate 4.

[0046] The main structure of the metal-ceramic package 1 consists of two parts. The lower part is a ceramic base 11, and the upper part is a metal ring frame 12.

[0047] The inner side wall of the ceramic base 11 adopts a three-layer stepped structure to form a multi-layer trapezoidal inner cavity. Metal inner bonding fingers 13 are distributed on the bottom step for connecting the signals of the MEMS chip 2; metal outer bonding fingers 14 are distributed on the middle step for connecting the hybrid integrated circuit signals; the top step is the metal ring frame structure 12 of the metal-ceramic package 1; the corresponding inner and outer bonding fingers are interconnected in pairs, and the inner and outer bonding fingers are in one-to-one correspondence and conduction with the bottom pad pins 15 of the metal-ceramic package 1.

[0048] According to the temperature characteristics of the materials of the metal-ceramic package 1 and the MEMS chip 2, it can be directly bonded or indirectly fixed to the bottom of the inner cavity of the metal-ceramic package 1 by designing a stress isolation block 21.

[0049] The hybrid integrated circuit 3 includes an ASIC bare chip 31, discrete resistor-capacitor devices 32, and a ceramic circuit board 33.

[0050] The material of the metal cover plate 4 is kovar alloy. The center area of the cover plate structure is thick, and the four peripheral edges are thin, which can not only meet the requirements of structural strength but also be compatible with the process conditions of parallel seam welding.

[0051] The MEMS chip 2 is fixed to the bottom surface of the inner cavity of the metal-ceramic package 1 with an adhesive; the ASIC chip 31 is fixed to the ceramic circuit board 33 with an adhesive, and the resistor-capacitor device 32 is soldered to the ceramic circuit board 33 of the hybrid integrated circuit 3; the ceramic circuit board 33 of the hybrid integrated circuit 3 can be fixed to the side wall step of the metal-ceramic package 1 with epoxy glue; the metal cover plate 4 and the metal ring frame 12 area of the metal-ceramic package 1 are subjected to parallel seam welding to form a sealed chamber, as Figure 1 shown.

[0052] The metal cover plate 4 is placed on the metal ring frame 12 structure of the metal-ceramic package 1, and the two are welded together by parallel seam welding to form a hermetic package.

[0053] As Figure 7As shown in the figure, the high-integration hybrid integration packaging method for MEMS chips includes the following steps:

[0054] S1. Design a ceramic substrate 33. According to the circuit function, ASIC bare chip 31, and discrete resistor-capacitor devices 32, design the layout and wiring, determine the structural size of the ceramic circuit substrate 33, and fabricate the ceramic substrate 33.

[0055] Design a metal-ceramic package 1. According to the sizes of the MEMS chip 2 and the hybrid integrated circuit 3, design the planar size of the metal-ceramic package 1 structure. Considering the thickness of the MEMS chip 2, the process arc height of the ball-bonded metal wires, the ASIC bare chip 31, the discrete resistor-capacitor devices 32, the thickness of the ceramic circuit substrate 33, the height of the metal cover 4, etc., design the height dimension of the metal-ceramic package 1.

[0056] On the inner cavity sidewall of the ceramic base 12 of the metal-ceramic package 1, design a three-layer stepped structure. On the bottom step, distribute several metal inner bonding fingers 13 for connecting the signals of the MEMS chip 2. On the middle step, distribute several metal outer bonding fingers 14 for connecting the signals of the hybrid integrated circuit 3. On the top step, is the metal ring frame 12 structure of the metal-ceramic package 1. The corresponding inner and outer bonding fingers are interconnected in pairs, and the inner and outer bonding fingers are in one-to-one correspondence and conduction with the external welding pad pins 15 at the bottom of the metal-ceramic package 1.

[0057] Fabricate the metal-ceramic package. The main body material of the metal-ceramic package structure is alumina. Through the electroforming process, fabricate several inner bonding fingers 131 - 13..., outer bonding fingers 141 - 14..., and external pins 151 - 15..., as Figure 2 、 Figure 3 shown. The material is gold, and the number of metal bonding fingers can be determined according to actual requirements. Using the multi-layer ceramic processing technology, realize the pairwise interconnection between the corresponding inner and outer bonding fingers of the metal-ceramic package 1, and the inner and outer bonding fingers are in one-to-one correspondence and conduction with the welding pad pins 15 at the bottom of the metal-ceramic package 1. Fabricate a metal ring frame 12 above the metal-ceramic package 1 for the parallel seam welding process to achieve hermetic packaging.

[0058] According to the structural size of the metal-ceramic package 1 and the requirements of the parallel seam welding process, design the three-dimensional size of the metal cover 4. The metal cover 4 uses a kovar alloy material. The center area 41 of the cover structure is thick, and the edge 42 is thin, as Figure 4 shown, which can not only meet the structural strength requirements but also be compatible with the process conditions of the parallel seam welding.

[0059] S2. Fix the MEMS chip 2 at the bottom of the inner cavity of the metal-ceramic package 1 directly or indirectly.

[0060] There are two bonding methods for the MEMS chip 2. One is that the sensitive structure of the MEMS chip 2 is directly bonded to the bottom of the inner cavity of the metal-ceramic package 1 (if the MEMS chip 2 is not greatly affected by temperature and stress, it can be directly fixed to the bottom of the metal-ceramic package 1 through special patch glue). The other is to indirectly complete the installation of the MEMS chip by designing a stress isolation block 21. If factors such as temperature and stress have a greater impact on the MEMS chip 2, first bond the lower surface of the stress isolation block to the bottom of the inner cavity of the metal-ceramic package 1, and then bond the MEMS chip 2 to the upper surface of the isolation block 21, so as to reduce the influence of factors such as temperature and structural stress on the MEMS chip 2.

[0061] S3. By means of gold wire ball bonding or the like, connect the pad electrodes on the MEMS chip 2 to the inner bonding fingers 13 on the bottom step of the metal-ceramic package 1 with metal wires.

[0062] S4. Fabricate the hybrid integrated circuit 3. According to the circuit board design layout, first weld the resistor-capacitor discrete devices 32 to the ceramic circuit substrate 33, then use special patch glue to bond the ASIC bare chip 31 to the corresponding position of the ceramic circuit substrate 33, and then fix the hybrid integrated circuit 3 to the middle step of the metal-ceramic package 1 by means of glue. After curing, connect the solder joints on the ASIC bare chip 31 to the corresponding solder joints on the ceramic circuit substrate 33 by gold wire ball bonding, as Figure 5 shown; finally, connect the pad on the ceramic circuit substrate 33 to the outer bonding finger 14 on the middle step with metal wires through the gold wire ball bonding process to achieve electrical interconnection, as Figure 6 shown. The pad pins 15 at the bottom of the metal-ceramic package 1 are responsible for external signal transmission.

[0063] S5. Place the metal cover 4 above the metal ring frame 12 of the metal-ceramic package 1, and then perform the parallel seam welding process to make the MEMS chip 2 and the electronic components work under the airtight nitrogen or other protective atmosphere packaging, and the hybrid integration of the hybrid integrated circuit 3 and the MEMS chip 2 can be completed. The encapsulated sensor realizes the input and output functions to the outside through the pad pins 15 at the bottom of the metal-ceramic package 1.

[0064] The length, width and height of the packaging structure in this embodiment are approximately 20mm * 12.6mm * 6mm respectively, and the leakage rate after packaging is less than 5 * 10-8 atm·cm 3 / s.

[0065] The present invention is a three-dimensional package. The MEMS chip 2 and the hybrid integrated circuit 3 (including the ASIC bare chip 31, the resistor-capacitor device 32, and the ceramic substrate 33) are respectively installed at different heights of the package shell 1 and stacked vertically, so that the volume of the packaged chip is smaller. The metal-ceramic package shell can be used for hermetic packaging, and the application scenarios are more extensive. The ceramic base 11 has a three-layer stepped structure inside. The inner bonding fingers 13 at the bottom step are interconnected with the MEMS chip 2, and the outer bonding fingers 14 at the middle step are interconnected with the hybrid integrated circuit 3. The inner and outer bonding fingers are interconnected and conduct with the bottom pins 15 one by one, realizing the miniaturization and high integration of the packaged MEMS chip.

[0066] The above is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered by the protection scope of the present invention.

Claims

1. A highly integrated hybrid integrated packaged MEMS chip, characterized in that: It comprises a metal-ceramic tube shell (1), a MEMS chip (2) connected at different heights inside the metal-ceramic tube shell (1), a hybrid integrated circuit (3), and a metal cover plate (4) hermetically sealed with the metal-ceramic tube shell (1); The metal-ceramic tube shell (1) comprises a ceramic base (11) with a multi-layer trapezoidal inner cavity arranged therein, a metal ring frame structure (12) connected to the top step of the ceramic base (11), a metal inner bonding finger (13) connected to the bottom step of the ceramic base (11), a metal outer bonding finger (14) connected to the middle step of the ceramic base (11), and a pad pin (15) connected to the outer bottom of the ceramic base (11); The MEMS chip (2) is connected to the bottom of the inner cavity of the ceramic base (11) and is bonded to the metal inner bonding finger (13) through a metal wire, and the metal inner bonding finger (13) transmits a MEMS signal; the hybrid integrated circuit (3) is connected to the middle step of the ceramic base (11) and is bonded to the metal outer bonding finger (14) through a metal wire, and the metal outer bonding finger (14) transmits a hybrid integrated circuit signal; the metal inner bonding finger (13) and the corresponding metal outer bonding finger (14) are interconnected in pairs and are connected to the pad pins (15) in a one-to-one correspondence, and the pad pins (15) transmit signals to the outside; the bottom of the metal ring frame structure (12) is welded to the top step of the ceramic base (11), and the top is airtightly welded to the metal cover plate (4).

2. The highly integrated hybrid integrated packaged MEMS chip according to claim 1, characterized in that: The MEMS chip (2) can be directly bonded to the bottom of the inner cavity of the metal-ceramic tube shell (1), or indirectly fixed to the bottom of the inner cavity of the metal-ceramic tube shell (1) via a stress isolation block (21), wherein the stress isolation block (21) is connected between the MEMS chip (2) and the bottom of the inner cavity of the metal-ceramic tube shell (1) to reduce the influence of temperature and structural stress.

3. A highly integrated hybrid integrated packaged MEMS chip according to claim 2, characterized in that: The hybrid integrated circuit (3) comprises an ASIC bare chip (31), a resistor and capacitor component (32) and a ceramic substrate (33); the ASIC chip (31) is bonded to the ceramic circuit substrate (33); the resistor and capacitor component (32) is welded to the ceramic circuit substrate (33); and the ceramic circuit substrate (33) is bonded to the middle step of the ceramic base (11) on the side where the metal external bonding finger (14) is not provided.

4. The high-integration hybrid integrated package MEMS chip according to claim 3, characterized in that: The adhesive of the MEMS chip (2), the adhesive of the ASIC bare chip (31), and the adhesive of the ceramic circuit substrate (33) all have different curing temperatures; The curing temperature of the adhesive of the ceramic circuit substrate (33) is lower than the curing temperature of the adhesive of the MEMS chip (2).

5. The high-integration hybrid integrated package MEMS chip according to claim 1, characterized in that: The material of the metal cover plate (4) is Kovar alloy; The metal cover plate (4) comprises a cover plate structure central region (41) and an edge (42) connected to the central region (41) of the cover plate structure, wherein the thickness of the cover plate structure central region (41) is greater than the thickness of the edge (42); The edge (42) and the metal ring frame structure (12) are connected via parallel welds.

6. The highly integrated hybrid integrated packaged MEMS chip according to claim 1, characterized in that: The numbers of the metal inner bonding fingers (13), the metal outer bonding fingers (14) and the pad pins (15) are all the same, and the metal inner bonding fingers (13) and the metal outer bonding fingers (14) are arranged in pairs.

7. The highly integrated hybrid integrated packaged MEMS chip according to claim 1, characterized in that: The ceramic base (11) is made of alumina, and the metal inner bonding fingers (13), the metal outer bonding fingers (14) and the pad pins (15) are manufactured by an electroforming method. The metal inner bonding fingers (13) and the metal outer bonding fingers (14) are interconnected in pairs and are electrically connected to the pad pins (15) in a one-to-one correspondence through a multilayer ceramic processing method.

8. A highly integrated hybrid integrated packaged MEMS chip according to any one of claims 3 to 7, characterized in that: The method for preparing a highly integrated hybrid integrated packaged MEMS chip comprises the following steps: S1, designing the hybrid integrated circuit (3), then designing the structural plane dimensions of the metal-ceramic tube shell (1) according to the dimensions of the MEMS chip (2) and the hybrid integrated circuit (3), designing the height dimensions of the metal-ceramic tube shell (1) in combination with the thickness of the MEMS chip (2), the arc height of the metal wire, the thickness of the ASIC bare chip (31), the discrete resistor-capacitor device (32), the ceramic circuit substrate (33), and the height of the metal cover plate (4), and preparing the metal-ceramic tube shell (1); S2, fixing the MEMS chip (2) directly or indirectly to the bottom of the inner cavity of the ceramic base (11); S3, connecting the pad electrode on the MEMS chip (2) and the inner bonding finger (13) with a metal wire; S4, welding the discrete resistor and capacitor components (32) to the ceramic circuit substrate (33), then bonding the ASIC bare chip (32) to the corresponding position of the ceramic circuit substrate (33), and then fixing the hybrid integrated circuit (3) on the middle step of the ceramic base (11) by gluing, connecting the ASIC bare chip (32) and the ceramic circuit substrate (33) according to the corresponding welding points, and finally connecting the pads on the ceramic circuit substrate (33) and the external bonding fingers (14) with metal wires; S5. The metal cover plate (4) is placed on the metal ring frame (12) for airtight packaging, and a highly integrated hybrid integrated packaged MEMS chip is prepared.

9. The high-integration hybrid integrated package MEMS chip according to claim 8, characterized in that: In step S3, the MEMS chip (2) is bonded to the inner bonding finger (13) by gold wire ball bonding; In step S4, the ASIC bare chip (32) is connected to the ceramic circuit substrate (33) by gold wire ball bonding; In step S5, the metal cover plate (4) is placed on the metal ring frame (12) and hermetically sealed by parallel welds, so that the MEMS chip (2) and the electronic components of the hybrid integrated circuit (3) operate under airtight nitrogen or other protective atmosphere packaging.

10. The high-integration hybrid integrated package MEMS chip according to claim 8, characterized in that: In step S2, the sensitive structure of the MEMS chip (2) is directly bonded to the bottom of the inner cavity of the ceramic base (11); Alternatively, the MEMS chip (2) is indirectly mounted via the stress isolation block (21): firstly, the lower surface of the stress isolation block (21) is bonded to the bottom of the inner cavity of the ceramic base (11), and then the MEMS chip (2) is bonded to the upper surface of the stress isolation block (21).

Images