Semiconductor device and intake device thereof

Abstract

The invention belongs to the technical field of semiconductor equipment, and particularly relates to semiconductor equipment and an air inlet device thereof. The air inlet device comprises an air inlet column and a flow uniformizing piece, the air inlet column is internally provided with at least two air inlet channels, the flow uniformizing piece comprises at least two air inlet cavities, and each air inlet channel is correspondingly communicated with one air inlet cavity; each air inlet channel comprises a first air inlet sub-channel and a second air inlet sub-channel; the second air inlet sub-channel is communicated with the first air inlet sub-channel; the first air inlet sub-channel comprises at least two air outlet sections intersecting with the axis of the air inlet column, the included angle between any two adjacent air outlet sections is the same, and the included angle between each air outlet section and the axis of the air inlet column is the same. The first end of each air outlet section is communicated with the air outlet of the second air inlet sub-channel, and the second end of each air outlet section is communicated with the corresponding air inlet cavity. According to the air inlet device, the problem that the air outlet uniformity of the air inlet device is poor due to the fact that the air outlet speed difference of the existing air inlet device in the circumferential direction is large can be solved.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor equipment, and particularly relates to a semiconductor equipment and its gas inlet device. Background Art

[0002] Metal-organic chemical vapor deposition (MOCVD) is a vapor-phase epitaxial growth process, which uses organic compounds of group III and group II elements, hydrides of group V and group VI elements, etc. as crystal growth source materials, and conducts vapor-phase epitaxy on a substrate in a thermal decomposition reaction manner to grow thin films of different morphologies.

[0003] The semiconductor equipment for realizing the MOCVD process includes a gas inlet device, through which a gas containing source materials can be transported to a process chamber. The existing gas inlet device includes a gas inlet column and multiple stacked gas distribution layers. The gas inlet column is used to transport gas to each gas distribution layer. However, the gas outlet speed of the current gas inlet column varies greatly in its own circumferential direction, which will cause the gas outlet speed of the gas distribution layer to vary greatly in its own circumferential direction, resulting in poor gas outlet uniformity of the gas inlet device, and further poor uniformity of the thin film deposited on the substrate. Summary of the Invention

[0004] The purpose of the embodiments of this application is to provide a semiconductor equipment and its gas inlet device, which can solve the problem that the gas outlet speed of the current gas inlet device varies greatly in its own circumferential direction, resulting in poor gas outlet uniformity of the gas inlet device.

[0005] To solve the above technical problems, this application is implemented as follows:

[0006] In a first aspect, the embodiments of this application provide a gas inlet device for a semiconductor equipment, including a gas inlet column and a flow equalizing member disposed around the gas inlet column;

[0007] There are at least two spaced gas inlet channels in the gas inlet column, the flow equalizing member includes at least two gas inlet chambers sleeved in sequence, and each gas inlet channel is correspondingly communicated with a gas inlet chamber;

[0008] Each gas inlet channel includes a first gas inlet sub-channel and a second gas inlet sub-channel located above the first gas inlet sub-channel;

[0009] The gas inlet of the second gas inlet sub-channel is exposed on the surface of the gas inlet column, and the gas outlet of the second gas inlet sub-channel is communicated with the first gas inlet sub-channel;

[0010] The first intake sub-channel includes at least two outlet segments that intersect with the axis of the intake column. The angle between any two adjacent outlet segments is the same, and the angle between each outlet segment and the axis of the intake column is the same. The first end of each outlet segment is connected to the outlet of the second intake sub-channel, and the second end of each outlet segment is connected to the corresponding intake cavity.

[0011] The first intake sub-channels belonging to different intake channels are arranged at intervals along the axis direction of the intake column.

[0012] In a second aspect, an embodiment of the present application provides a semiconductor device, including a process chamber and the intake device as described above. The intake device is used to supply gas to the process chamber.

[0013] In the embodiment of the present application, since the first intake sub-channel includes at least two outlet segments that intersect with the axis of the intake column, the second end of the outlet segment can extend to the outer peripheral wall of the intake column and be exposed to the intake column. The angle between any two adjacent outlet segments is the same. That is to say, the second ends of the outlet segments are evenly distributed in the circumferential direction of the intake column. In this way, the flow velocity of the gas in each area in the circumferential direction of the intake column can be made to differ little or even be equal. And the angle between each outlet segment and the axis of the intake column is the same. In this way, the orientations of the second ends of each outlet segment are the same, so that the gas flow directions of each outlet segment are the same. It can be seen that this embodiment can make the gas flow directions of each outlet segment the same, and make the gas outlet speeds in each area in the circumferential direction of the intake column differ little or even be equal, thereby solving the problem of poor gas outlet uniformity of the current intake device. Description of the Drawings

[0014] Figure 1 It is a cross-sectional view of the intake column disclosed in the embodiment of the present application;

[0015] Figure 2 It is an exploded view of the intake column disclosed in the embodiment of the present application;

[0016] Figure 3 It is an exploded view of the intake device disclosed in the embodiment of the present application;

[0017] Figure 4 It is a top view of the intake device disclosed in the embodiment of the present application;

[0018] Figure 5 For the present application Figure 4 a cross-sectional view along line I-I;

[0019] Figure 6 For the present application Figure 5 a cross-sectional view along line A-A;

[0020] Figure 7 For the present application Figure 5 a cross-sectional view along line B-B;

[0021] Figure 8 Cross-sectional view along line C-C in this application Figure 5 ;

[0022] Figure 9 Cross-sectional view along line II-II in this application Figure 4 ;

[0023] Figure 10 Cross-sectional view along line D-D in this application Figure 9 ;

[0024] Figure 11 Schematic structural diagram of each flow equalizing ring disclosed in the embodiment of this application

[0025] Figure 12 Structural diagram of the semiconductor device disclosed in the embodiment of this application

[0026] Description of reference numerals:

[0027] 100 - intake column, 101 - intake port, 110 - intake channel, 111 - second intake sub-channel, 112 - outlet section, 113 - first connection section, 114 - second connection section, 115 - third connection section, 120 - column body, 121 - embedding groove, 122 - sixth gas groove, 130 - embedding block, 131 - second gas groove, 132 - third gas groove, 133 - fourth gas groove, 200 - gas distribution component, 210 - gas distribution layer, 211 - gas distribution wall, 220 - partition plate, 310 - flow equalizing cavity, 311 - first flow equalizing hole, 320 - intake cavity, 330 - flow equalizing ring, 331 - second flow equalizing hole, 340 - outer sleeve, 350 - inner sleeve, 400 - cooling structure, 410 - first cooling cavity, 420 - second cooling cavity, 421 - inlet channel, 422 - outlet channel, 423 - inlet port, 424 - discharge port, 500 - cooling pipe, 510 - cooling sub-pipe, 600 - gas equalizing wall, 610 - gas equalizing sub-wall, 620 - fixing sleeve, 621 - air guiding surface, 710 - cooling sleeve, 711 - sleeve body, 712 - upper cover, 713 - lower cover, 720 - partition board, 721 - notch, 730 - cleaning gas channel, 731 - cleaning gas inlet, 732 - cleaning gas outlet ring, 740 - sealing ring, 810 - process chamber, 811 - tail gas channel, 820 - wafer carrier device, 830 - heating device, 910 - first cleaning cavity, 920 - second cleaning cavity, 930 - outlet wall, 931 - third flow equalizing hole, 940 - cleaning gas outlet Detailed implementation manners

[0028] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0029] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, rather than to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are usually of the same category, and the number of objects is not limited. For example, the first object can be one or multiple. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / " generally indicates an "or" relationship between the associated objects before and after.

[0030] Next, in conjunction with the accompanying drawings, the semiconductor device and its air intake device provided by the embodiments of the present application will be described in detail through specific embodiments and their application scenarios.

[0031] As Figures 1 to 11 shown, the embodiments of the present application disclose an air intake device of a semiconductor device, including an air intake assembly. The air intake assembly may include an air intake column 100 and a flow equalizing member disposed around the air intake column 100. The air intake column 100 has at least two spaced-apart air intake channels 110, that is, each air intake channel 110 is isolated from each other and not connected. The flow equalizing member includes at least two sequentially sleeved air intake cavities 320, and each air intake channel 110 is correspondingly connected to one air intake cavity 320. In this way, each air intake channel 110 can supply gas to the corresponding air intake cavity 320 respectively.

[0032] Each air intake channel 110 includes a first air intake sub-channel and a second air intake sub-channel 111 located above the first air intake sub-channel. The air intake port of the second air intake sub-channel 111 is exposed on the surface of the air intake column 100, and the air outlet of the second air intake sub-channel 111 is connected to the first air intake sub-channel.

[0033] The first air intake sub-channel includes at least two air outlet segments 112 intersecting with the axis of the air intake column 100. The angle between any two adjacent air outlet segments 112 is the same, and the angle between each air outlet segment 112 and the axis of the air intake column 100 is the same; the first ends of each air outlet segment 112 are all connected to the air outlet of the second air intake sub-channel 111, and the second ends of each air outlet segment 112 are all connected to the corresponding air intake cavity 320. The first air intake sub-channels belonging to different air intake channels 110 are spaced apart along the axis direction of the air intake column 100.

[0034] In the embodiment of the present application, the first intake sub-channel includes at least two outlet sections 112 intersecting with the axis of the intake column 100. Therefore, the second end of the outlet section 112 can extend to the outer peripheral wall of the intake column 100 and be exposed to the intake column 100. The included angle between any two adjacent outlet sections 112 is the same. That is to say, the second ends of the outlet sections 112 are evenly distributed in the circumferential direction of the intake column 100. In this way, the flow velocities of the gas in each region in the circumferential direction of the intake column 100 are not very different or even equal, and the included angles between each outlet section 112 and the axis of the intake column 100 are the same. In this way, the orientations of the second ends of each outlet section 112 are the same, so that the gas flow directions of each outlet section 112 are the same. It can be seen that in this embodiment, the gas flow directions of each outlet section 112 can be made the same, and the outlet velocities of the gas in each region in the circumferential direction of the intake column 100 are not very different or even equal, thereby solving the problem of poor outlet uniformity of the current intake device, and further solving the problem of poor uniformity of the thin film deposited on the substrate.

[0035] In an alternative embodiment, the intake device further includes a gas distribution assembly 200. The gas distribution assembly 200 is located at the bottom end of the intake assembly. The intake assembly is used to supply gas to the gas distribution assembly 200. A plurality of distribution holes are provided on the circumferential side wall of the gas distribution assembly 200. A part of the intake column 100 is located inside the gas distribution assembly 200. The gas distribution assembly 200 includes at least two gas distribution layers 210 stacked in the axial direction of the intake column 100. Each gas distribution layer 210 corresponds to an intake cavity 320, and each intake cavity 320 corresponds to a gas distribution layer 210, and each intake cavity 320 is connected to each gas distribution layer 210 in a one-to-one correspondence. In this embodiment, the gas distribution assembly 200 can be arranged in the process chamber 810 to supply gas to the process chamber 810.

[0036] In specific implementation, generally, each gas distribution layer 210 is provided with a plurality of distribution cavities sleeved in sequence along the radial direction. A plurality of distribution holes are provided on the circumferential wall of each distribution cavity. Adjacent distribution cavities are communicated through these distribution holes. In this way, each intake channel 110 is connected to each gas distribution layer 210 through its respective outlet openings in a one-to-one correspondence. Since the uniformity of the gas ejected from the second end of the outlet section 112 is good, the gas entering the gas distribution layer 210 evenly can enter the process chamber 810 evenly after passing through the plurality of distribution cavities, ensuring the uniformity of the thin film deposited on the substrate.

[0037] In an alternative embodiment, the flow equalizing member further includes at least two flow equalizing cavities 310 spaced apart along the axis of the intake column 100. The other end of each outlet section 112 is communicated with the intake cavity 320 through a flow equalizing cavity 310. A plurality of first flow equalizing holes 311 are circumferentially spaced on the flow equalizing cavity 310.

[0038] In this embodiment, each air outlet section 112 communicates with the air inlet cavity 320 through a flow equalizing cavity 310. Therefore, the gas discharged through the air outlet section 112 will enter the air inlet cavity 320 through the flow equalizing cavity 310 and finally enter the process chamber 810. Since the volume of the flow equalizing cavity 310 is relatively large, the flow equalizing cavity 310 can stabilize the pressure of the gas discharged from the air outlet section 112. In addition, the flow equalizing cavity 310 also has a plurality of first flow equalizing holes 311, so that the gas in the flow equalizing cavity 310 can be equalized, so that the flow rate and pressure of the gas discharged from the flow equalizing cavity 310 are less different or even the same. Of course, the air inlet device may not include the flow equalizing cavity 310. In this case, the air outlet section 112 can be directly communicated with the corresponding air inlet cavity 320.

[0039] In order to further equalize the gas in the flow equalizing cavity 310, in an alternative embodiment, a flow equalizing ring 330 is provided in each flow equalizing cavity 310. The flow equalizing ring 330 surrounds the intake column 100 and divides the flow equalizing cavity 310 into two sub-flow equalizing cavities stacked along the axis direction of the intake column 100. The flow equalizing ring 330 has a plurality of second flow equalizing holes 331 communicating the two sub-flow equalizing cavities. The first flow equalizing holes 311 are located on one of the two sub-flow equalizing cavities, and the second end of the air outlet section 112 communicates with the other sub-flow equalizing cavity. That is to say, the flow equalizing ring 330 is located between the first flow equalizing holes 311 and the second end of the air outlet section 112. In this embodiment, a flow equalizing ring 330 is provided in each flow equalizing cavity 310. Since the flow equalizing ring 330 is located between the first flow equalizing holes 311 and the second end of the air outlet section 112, the gas discharged from the second end of the air outlet section 112 will first pass through the flow equalizing ring 330 and then be discharged from the first flow equalizing holes 311. When the gas passes through the flow equalizing ring 330, the gas can be preliminarily equalized, and the preliminarily equalized gas passes through the first flow equalizing holes 311 for secondary equalization, so as to improve the flow equalizing effect of the flow equalizing cavity 310 on the gas.

[0040] In an alternative embodiment, the axis direction of the intake column 100 is the vertical direction, and the flow equalizing ring 330 is located above the second end of the corresponding air outlet section 112. In this embodiment, since the density of the gas is small, the gas discharged from the second end of the air outlet section 112 will float upward. Therefore, in this embodiment, setting the flow equalizing ring 330 above the second end of the air outlet section 112 makes it easier for the gas to pass through the flow equalizing ring 330, so as to improve the flow equalizing effect of the flow equalizing ring 330 on the gas. Of course, the flow equalizing ring 330 can also be located below the second end of the corresponding air outlet section 112.

[0041] In an alternative embodiment, the number of the second flow equalizing holes 331 on each layer of the flow equalizing ring 330 decreases successively from top to bottom. That is to say, the number of the second flow equalizing holes 331 on the flow equalizing ring 330 closer to the upper end of the intake column 100 is larger, and the number of the second flow equalizing holes 331 on the flow equalizing ring 330 closer to the lower end of the intake column 100 is smaller. Since the first intake sub-channels belonging to different intake channels 110 are arranged at intervals along the axial direction of the intake column 100, the air pressure of the gas discharged from the outlet section 112 closer to the upper end of the intake column 100 is relatively large, and the air pressure of the gas discharged from the outlet section 112 closer to the lower end of the intake column 100 is relatively small. In this embodiment, the number of the second flow equalizing holes 331 on the flow equalizing ring 330 closer to the upper end of the intake column 100 is relatively large, so as to improve the flow equalizing effect of the gas discharged from the outlet of the intake column 100 closer to the upper end, and improve the air outlet uniformity in the axial direction of the intake column 100.

[0042] And / or, in an alternative embodiment, the flow-through area of the second flow equalizing holes 331 on each layer of the flow equalizing ring 330 decreases successively from top to bottom. In this embodiment, since the first intake sub-channels belonging to different intake channels 110 are arranged at intervals along the axial direction of the intake column 100, the air pressures of the gases entering the flow equalizing cavity 310 from different intake channels 110 are different, and the pressure of the gas entering the uppermost flow equalizing cavity 310 is relatively large, and the pressure of the gas entering the lowermost flow equalizing cavity 310 is relatively small. Therefore, in this embodiment, the flow-through area of the second flow equalizing holes 331 on the uppermost flow equalizing ring 330 is set to be the largest, and the flow-through area of the second flow equalizing holes 331 on the lowermost flow equalizing ring 330 is set to be the smallest, so as to balance the air pressures of the gases discharged from each flow equalizing cavity 310, so that the air pressures of the gases discharged from each flow equalizing cavity 310 are basically the same. Of course, the number and the flow-through area of the second flow equalizing holes 331 on each flow equalizing ring 330 may also be equal, and the present application does not limit this.

[0043] In an alternative embodiment, the flow equalizing cavities 310 are arranged successively in the vertical direction, and the intake cavities 320 corresponding to the flow equalizing cavities 310 arranged successively from top to bottom are sleeved from outside to inside in turn. In this embodiment, the flow equalizing cavities 310 are arranged at intervals from top to bottom, the intake cavities 320 are arranged at intervals from outside to inside, and each flow equalizing cavity 310 has an intake cavity 320 communicated with itself on the outside. The structure of this embodiment can avoid air leakage between the flow equalizing cavities 310, between the intake cavities 320, and between the flow equalizing cavity 310 and the intake cavity 320.

[0044] As described above, the intake device may further include a gas distribution assembly 200, and the gas distribution assembly 200 includes at least two layers of gas distribution layers 210 stacked in the axial direction of the intake column 100. Optionally, please refer to Figure 3, the intake device further includes an outer sleeve 340 and at least two inner sleeves 350. A part of the intake column 100 is located inside each inner sleeve 350. The at least two inner sleeves 350 are sleeved in sequence. The open ends of each inner sleeve 350 are all arranged downward, and the inner sleeves 350 distributed from the outside to the inside extend to the bottom walls of the gas distribution layers 210 distributed from top to bottom one by one. Specifically, the outermost inner sleeve 350 extends to the bottom wall of the uppermost gas distribution layer 210, the innermost inner sleeve 350 extends to the bottom wall of the lowermost gas distribution layer 210, and the height of the bottom end of the inner sleeve 350 decreases in sequence from the outside to the inside.

[0045] The side walls between two adjacent inner sleeves 350 are sealed and connected. Specifically, each inner sleeve 350 has a connected top wall and side wall. The opening of the inner sleeve 350 faces the top wall of the inner sleeve 350. A seal can be arranged between the side walls of two adjacent inner sleeves 350, so that the side walls between two adjacent inner sleeves 350 are sealed and connected; or, the top wall of each inner sleeve 350 extends to the side wall of the inner sleeve 350 located outside it and is sealed and connected to the side wall of the outer inner sleeve 350, so that the side walls between two adjacent inner sleeves 350 are sealed and connected.

[0046] Any one inner sleeve 350, the top wall of the inner sleeve 350 located inside it and the intake column 100 jointly enclose a uniform flow cavity 310. An intake cavity 320 is formed between the side walls of two adjacent inner sleeves 350. The innermost inner sleeve 350, the bottom wall of the lowermost gas distribution layer 210 and the intake column 100 jointly enclose the lowermost uniform flow cavity 310. Optionally, the bottom wall of the lowermost gas distribution layer 210 can be the bottom wall of the gas distribution assembly 200, or the bottom wall of the lowermost gas distribution layer 210 can be formed by using a partition plate 220. At this time, the partition plate 220 is arranged at an interval from the bottom wall of the gas distribution assembly 200.

[0047] The outer sleeve 340 is sleeved outside the outermost inner sleeve 350. The bottom end of the outer sleeve 340 extends to the top wall of the uppermost gas distribution layer 210. The top end of the outer sleeve 340 is sealed and connected to the outermost inner sleeve 350. An intake cavity 320 is formed between the outer sleeve 340 and the outermost inner sleeve 350 and is located outside the uppermost uniform flow cavity 310. Optionally, a seal can be arranged between the side wall of the outermost inner sleeve 350 and the outer sleeve 340, so that the side wall of the outermost inner sleeve 350 and the outer sleeve 340 are sealed and connected; or, the top wall of the outermost inner sleeve 350 extends to the side wall of the outer sleeve 340 and is sealed and connected to the side wall of the outer sleeve 340, so that the side wall of the outermost inner sleeve 350 and the outer sleeve 340 are sealed and connected.

[0048] An intake chamber 320 is correspondingly provided on the outside of each uniform flow chamber 310, and the intake chamber 320 communicates with the first uniform flow holes 311 of the uniform flow chamber 310 located inside it. In this embodiment, the uniform flow chambers 310 are spaced apart from top to bottom, the intake chambers 320 are spaced apart from outside to inside, and an intake chamber 320 communicating with itself is provided on the outside of each uniform flow chamber 310. The structure of this embodiment can prevent gas leakage between the uniform flow chambers 310, between the intake chambers 320, and between the uniform flow chamber 310 and the intake chamber 320.

[0049] In an alternative embodiment, each intake port 101 is provided at the first end of the intake column 100, and in the direction of extending from the first end of the intake column 100 to the second end of the intake column 100, the volumes of the uniform flow chambers 310 decrease in sequence.

[0050] In this embodiment, taking Figure 3 the shown orientation as an example, the volumes of the uniform flow chambers 310 decrease in sequence from top to bottom. Since the outlet sections 112 of the intake channels 110 are spaced apart in the axial direction of the intake column 100, the gas first discharges from the outlet of the uppermost outlet section 112 and thus enters the uppermost uniform flow chamber 310, and finally discharges from the outlet of the lowermost outlet section 112 and thus enters the lowermost uniform flow chamber 310. Therefore, when the volumes of the uniform flow chambers 310 are the same, the gas will first fill the uppermost uniform flow chamber 310 and thus first enter the uppermost gas distribution layer 210, and finally fill the lowermost uniform flow chamber 310 and thus finally enter the lowermost gas distribution layer 210. In this way, the gas distribution layers 210 cannot discharge gas simultaneously, which may lead to poor uniformity of the thin film deposited on the substrate. However, in this embodiment, the volumes of the uniform flow chambers 310 decrease in sequence from top to bottom. Therefore, by controlling the volumes of the uniform flow chambers 310, the gas can almost fill the uniform flow chambers 310 simultaneously, and further enable the gas distribution layers 210 to discharge gas simultaneously.

[0051] In addition, since the outlet sections 112 of the intake channels 110 are spaced apart in the axial direction of the intake column 100, the air pressures of the gas entering the uniform flow chamber 310 from different intake channels 110 are different, and the pressure of the gas entering the uppermost uniform flow chamber 310 is relatively large, and the pressure of the gas entering the lowermost uniform flow chamber 310 is relatively small. Therefore, in this embodiment, the volume of the uppermost uniform flow chamber 310 is set to be the largest, and the volume of the lowermost uniform flow chamber 310 is set to be the smallest. In this way, the air pressures of the gas discharged from the uniform flow chambers 310 can be balanced, so that the air pressures of the gas discharged from the uniform flow chambers 310 are basically the same, and further ensure the uniformity of the gas discharged from the gas distribution layers 210, and further ensure the uniformity of the thin film deposited on the substrate.

[0052] In an alternative embodiment, the extending directions of the outlet segments 112 of the same first intake sub-channel are all perpendicular to the axis of the intake column 100, so that the extending length of the outlet segment 112 can be reduced, thereby reducing the pressure drop of the gas. Of course, the extending directions of the outlet segments 112 of the same first intake sub-channel can also form an obtuse angle or an acute angle with the axis of the intake column 100.

[0053] In an alternative embodiment, the inlets of the second intake sub-channels 111 belonging to different intake channels 110 are all exposed on the first end face of the intake column 100. The center line of the second intake sub-channel 111 of one of the intake channels 110 is collinear with the axis of the intake column 100, and the outlet segment 112 of this intake channel 110 is closer to the first end face than the outlet segments 112 of the other intake channels 110. Specifically, each second intake sub-channel 111 has an inlet 101 and an outlet. The central axis of the second intake sub-channel 111 of this intake channel 110 is collinear with the central axis of the intake column 100, that is to say, the central axes of the inlet 101 and the outlet of this second intake sub-channel 111 are both collinear with the central axis of the intake column 100. Compared with the case where the central axis of the second intake sub-channel 111 intersects the central axis of the intake column 100, when the outlet of the second intake sub-channel 111 extends to the same elevation position, this embodiment can reduce the extending length of the second intake sub-channel 111, thereby reducing the processing difficulty of the intake column 100 and enhancing the structural strength of the intake column 100. In addition, with the structure of this embodiment, the inlet 101 and the outlet of the second intake sub-channel 111 are not offset in the radial direction of the intake column 100, so the radial space of the intake column 100 occupied by the second intake sub-channel 111 can be reduced, thereby reducing the volume of the intake column 100.

[0054] Each of the second intake sub-channels 111 of the other intake channels 110 described above includes a first connection section 113, a second connection section 114, and a third connection section 115 that are connected in sequence. The central axis of the third connection section 115 is collinear with the axis of the intake column 100. The second connection section 114 is bent relative to the third connection section 115, and the first connection section 113 is bent relative to the second connection section 114. One end of each first connection section 113 facing away from the second connection section 114 is the intake port 101 of the corresponding second intake sub-channel 111, and one end of each third connection section 115 facing away from the second connection section 114 is the outlet of the corresponding second intake sub-channel 111. In this embodiment, the central axis of the third connection section 115 with the outlet is collinear with the axis of the intake column 100. That is to say, the central axis of the outlet is collinear with the axis of the intake column 100. Since each outlet section 112 is connected to the outlet and the angles between each outlet section 112 and the axis of the intake column 100 are the same, the extension lengths of the outlet sections 112 in this embodiment are the same. This can make the pressure drops of the gas passing through each outlet section 112 the same, so that the pressures of the gas ejected from the second ends of each outlet section 112 are equal, thus ensuring the uniformity of the thin film deposited on the substrate.

[0055] To reduce the volume of the intake column 100, in an alternative embodiment, the central axes of the first connection section 113 and the third connection section 115 are respectively parallel to the central axis of the intake column 100, and the central axis of the second connection section 114 is perpendicular to the central axis of the intake column 100. In this embodiment, the central axes of the first connection section 113 and the third connection section 115 are respectively parallel to the central axis of the intake column 100. That is to say, the central axes of the first connection section 113 and the third connection section 115 are not inclined relative to the central axis of the intake column 100. Therefore, the two ends of the first connection section 113 are not offset in the radial direction of the intake column 100, and the two ends of the third connection section 115 are not offset in the radial direction of the intake column 100 either. And the central axis of the second connection section 114 is perpendicular to the central axis of the intake column 100. That is to say, the second connection section 114 of the second intake sub-channel 111 in this embodiment occupies the largest radial space of the intake column 100. Therefore, in this embodiment, the distance between the first connection section 113 and the third connection section 115 can be reduced, thereby reducing the length of the second connection section 114, and further reducing the radial space of the intake column 100 occupied by the other intake channels 110.

[0056] The intake column 100 can be integrally formed by means of casting or the like. However, since the third connection section 115 is located inside the intake column 100, in order to reduce the processing difficulty of the third connection section 115, in an alternative embodiment, the intake column 100 includes a column body 120 and at least one embedding block 130. At least one embedding groove 121 is provided on the outer peripheral surface of the column body 120. The embedding block 130 is embedded in the corresponding embedding groove 121. A first gas groove is provided on the bottom wall of the embedding groove 121, and a second gas groove 131 is provided on the surface of the embedding block 130 facing the bottom wall. The first gas groove and the second gas groove 131 together form the corresponding third connection section 115. Specifically, when the embedding block 130 is embedded in the embedding groove 121, the surface of the embedding block 130 facing away from the bottom wall of the embedding groove 121 is flush with the outer peripheral surface of the column body 120. Optionally, the embedding groove 121 includes a first side wall, a second side wall, a third side wall, and a fourth side wall. The first side wall is opposite to the third side wall, the second side wall is opposite to the fourth side wall. The first side wall and the third side wall are both perpendicular to the central axis of the intake column 100, and the included angle between the second side wall and the fourth side wall is 45 degrees.

[0057] In this embodiment, the intake column 100 includes a column body 120 and an embedding block 130. The embedding block 130 can be embedded into the embedding groove 121. When processing the third connection section 115, the embedding block 130 can be cut off from the column body 120. During this process, the embedding groove 121 is formed on the column body 120. At this time, the embedding block 130 and the column body 120 are two separate components. Therefore, it is relatively easy to provide the first gas groove on the bottom wall of the embedding groove 121 of the column body 120 and the second gas groove 131 on the surface of the embedding block 130 facing the bottom wall of the embedding groove 121. After processing the first gas groove and the second gas groove 131, the embedding block 130 can be embedded into the embedding groove 121, and the embedding block 130 can be fixed to the column body 120 by means of welding or the like, so that the first gas groove and the second gas groove 131 together form the third connection section 115. It can be seen that it is relatively easy to form the third connection section 115 by adopting the structure of this embodiment.

[0058] In addition, a third gas groove 132 and a fourth gas groove 133 can also be provided on the embedding block 130, and a fifth gas groove and a sixth gas groove 122 can also be provided on the inner wall of the embedding groove 121. The third gas groove 132 and the fifth gas groove together form the second connection section 114, and the fourth gas groove 133 and the sixth gas groove 122 together form the corresponding outlet section 112.

[0059] In an alternative embodiment, the intake device further includes a cleaning gas channel 730 and a cleaning chamber that are in communication with each other. The cleaning gas channel 730 and the cleaning chamber are arranged around the flow equalizing member. The cleaning gas channel 730 is located above the cleaning chamber. The cleaning gas channel 730 has an exposed cleaning gas inlet 731, and the cleaning chamber has a cleaning gas outlet 940 that can communicate with the process chamber 810 of the semiconductor device. In this embodiment, the cleaning gas channel 730 is provided on the intake device. By injecting cleaning gas into the cleaning gas channel 730 through the cleaning gas inlet 731, the process chamber 810 can be cleaned to ensure the cleanliness of the process chamber 810.

[0060] In an alternative embodiment, the cleaning chamber includes a first cleaning chamber 910 and a second cleaning chamber 920 that are in communication with each other. The cleaning gas channel 730 is in communication with the first cleaning chamber 910. The second cleaning chamber 920 is arranged around the first cleaning chamber 910. The cleaning gas outlet 940 is provided in the second cleaning chamber 920. The connection between the cleaning gas channel 730 and the first cleaning chamber 910 is located on the side of the first cleaning chamber 910 away from the second cleaning chamber 920. In this embodiment, the connection between the cleaning gas channel 730 and the first cleaning chamber 910 is located on the side of the first cleaning chamber 910 away from the second cleaning chamber 920. Therefore, the cleaning gas entering the first cleaning chamber 910 will first fill the first cleaning chamber 910 and then enter the second cleaning chamber 920 and finally enter the process chamber 810. In this way, the first cleaning chamber 910 can be used to stabilize the pressure of the cleaning gas so that the cleaning gas enters the second cleaning chamber 920 and the process chamber 810 evenly. Of course, the connection between the cleaning gas channel 730 and the first cleaning chamber 910 can also be located in the middle, on the right side, etc. of the first cleaning chamber 910; or, the cleaning chamber can also be an integral cavity.

[0061] To further improve the uniformity of the cleaning gas, in an alternative embodiment, the first cleaning chamber 910 and the second cleaning chamber 920 are separated by an air outlet wall 930, and a plurality of third flow equalizing holes 931 are provided at intervals along the circumferential direction of the air outlet wall 930. The number of cleaning gas outlets 940 is multiple, and each cleaning gas outlet 940 is provided at intervals at the bottom of the second cleaning chamber 920. In this embodiment, a plurality of third flow equalizing holes 931 are provided on the air outlet wall 930 that separates the first cleaning chamber 910 and the second cleaning chamber 920. The third flow equalizing holes 931 can further improve the uniformity of the cleaning gas entering the second cleaning chamber 920, so as to improve the uniformity of the cleaning gas entering the process chamber 810. In addition, the cleaning gas outlets 940 are provided at the bottom of the second cleaning chamber 920. In this way, the cleaning gas entering the second cleaning chamber 920 will first fill the second cleaning chamber 920 and then evenly enter the process chamber 810, so as to further improve the uniformity of the cleaning gas entering the process chamber 810, and thus make the cleanliness of each area of the process chamber 810 consistent.

[0062] In an alternative embodiment, the number of the third flow equalizing holes 932 is less than the number of the cleaning gas outlets 940, so as to ensure that the cleaning gas first fills the first cleaning chamber 910 and then enters the second cleaning chamber 920.

[0063] In an alternative embodiment, the cleaning gas outlet 940 and the third flow equalizing hole 931 are arranged offset in the radial direction of the intake column 100, so as to prevent the cleaning gas ejected from the third flow equalizing hole 931 from directly entering the cleaning gas outlet 940, thereby further improving the uniformity of the cleaning gas entering the process chamber 810.

[0064] In an alternative embodiment, in addition to the intake assembly and the gas distribution assembly 200 described above, the intake device may further include a cooling structure 400.

[0065] The cooling structure 400 includes: a first cooling chamber 410 surrounding the intake assembly, a second cooling chamber 420 located at the bottom end of the gas distribution assembly 200, and a plurality of cooling tubes 500 located between the first cooling chamber 410 and the second cooling chamber 420 and communicating with both of them. Specifically, the gas distribution assembly 200 is sandwiched between the first cooling chamber 410 and the second cooling chamber 420, and then the first cooling chamber 410 and the second cooling chamber 420 are connected by the cooling tubes 500. The first cooling chamber 410 and the second cooling chamber 420 can respectively cool the gases located on the upper and lower sides of the gas distribution assembly 200, and a part of the cooling tubes 500 is located in the gas distribution layer 210, so that the cooling tubes 500 can cool the gas in the gas distribution layer 210. It can be seen that the cooling structure 400 of this embodiment can cool each area of the gas distribution assembly to prevent the gas from overheating the gas distribution assembly 200, thereby prolonging the service life of the gas distribution assembly 200. In addition, after the gas is cooled, it can also prevent the gas from undergoing a pre-reaction in the process chamber 810, so as to prevent impurities from precipitating in the process chamber 810 and affecting the uniformity of the thin film deposited on the substrate.

[0066] The first cooling chamber 410 is located above the gas distribution assembly 200. A partition plate 720 is arranged in the first cooling chamber 410. The partition plate 720 divides the first cooling chamber 410 into two sub-cooling chambers. A plurality of through holes are provided at the bottom of each of the two sub-cooling chambers, and each through hole is connected to a cooling tube 500. The plurality of cooling tubes 500 penetrate through the gas distribution assembly 200 and then communicate with the second cooling chamber 420. Specifically, one of the sub-cooling chambers is a cooling medium inlet chamber, and the other sub-cooling chamber is a cooling medium discharge chamber. The cooling medium inlet chamber and the cooling medium discharge chamber are connected to the second cooling chamber 420 through sub-cooling tubes to form a cooling path, so as to cool the gas. The cooling medium here can be cooling water, cooling oil, cooling gas, etc.

[0067] In an alternative embodiment, there are a plurality of annular gas-distributing walls 600 inside the gas distribution assembly 200. In other words, at least two gas-distributing walls 600 are provided in the gas distribution layer 210, and the gas-distributing walls 600 are sleeved in sequence. A plurality of gas-distributing holes (i.e., the distribution holes described above) are provided on the gas-distributing walls 600 at intervals along the circumferential direction of the gas-distributing walls 600. A plurality of through holes are also provided on the gas-distributing walls 600, and each through hole penetrates the gas-distributing wall 600 along the axial direction of the gas distribution assembly 200. One end of each cooling pipe 500 correspondingly passes through each through hole and communicates with the second cooling cavity 420. In this embodiment, at least two gas-distributing walls 600 are provided in the gas distribution layer 210, and through holes are provided on the gas-distributing walls 600. One end of each cooling pipe 500 correspondingly passes through each through hole. It can be seen that in this embodiment, the cooling pipes 500 are arranged inside the gas-distributing walls 600 to prevent the cooling pipes 500 from interfering with the gas flow inside the gas distribution assembly 200 and to prevent poor uniformity of the gas flowing out from the gas distribution layer 210. Of course, the gas-distributing walls 600 and the cooling pipes 500 can also be arranged independently of each other.

[0068] Since the size of the cooling pipes 500 is relatively large, in an alternative embodiment, in order to reduce the size of the gas-distributing walls 600, the gas-distributing walls 600 include a plurality of gas-distributing sub-walls 610 and a plurality of fixing sleeves 620. The gas-distributing sub-walls 610 extend along the circumferential direction of the gas distribution assembly 200. A plurality of gas-distributing holes are provided on each gas-distributing sub-wall 610 at intervals along the circumferential direction of the gas-distributing sub-wall 610. The plurality of gas-distributing sub-walls 610 are arranged at intervals along the circumferential direction of the gas distribution assembly 200. A fixing sleeve 620 is connected between two adjacent gas-distributing sub-walls 610, and the through hole penetrates the fixing sleeve 620. In this embodiment, the gas-distributing walls 600 include gas-distributing sub-walls 610 and a plurality of fixing sleeves 620. Each gas-distributing sub-wall 610 can extend along an arc direction. A plurality of gas-distributing holes are provided on the gas-distributing sub-walls 610. The solid part of the gas-distributing sub-wall 610 is located between the gas-distributing holes. This solid part can block the gas from passing through and can guide the gas to the gas-distributing holes for uniform flow. The through holes are provided in the fixing sleeves 620. In this way, only the size of the gas-distributing walls 600 at the fixing sleeves 620 needs to be increased, and there is no need to increase the size of the gas-distributing sub-walls 610, thereby reducing the size of the gas-distributing walls 600. Specifically, the thickness of the gas-distributing sub-walls 610 is relatively small, and the fixing sleeves 620 protrude relative to the gas-distributing sub-walls 610. Of course, the fixing sleeves 620 can also be flush with the gas-distributing sub-walls 610.

[0069] In an alternative embodiment, the fixing sleeve 620 can be a circular tube, or the cross-sectional shape of the fixing sleeve 620 is elongated, so that a wind guiding surface 621 is provided on one side of the fixing sleeve 620 facing the central region of the gas distribution assembly 200. In this embodiment, the gas in the gas distribution layer 210 flows from the central region of the gas distribution assembly 200 to the edge region of the gas distribution assembly 200. The gas in the gas distribution assembly 200 will contact one side of the fixing sleeve 620 facing the central region of the gas distribution assembly 200. And the fixing sleeve 620 of this embodiment is provided with a wind guiding surface 621 on this side, which can reduce the flow resistance of the gas and prevent vortex formation when the gas flows through the fixing sleeve 620. Further optionally, the fixing sleeve 620 can be a flat tube, that is, the cross-sectional shape of the fixing sleeve 620 is strip-shaped. The fixing sleeve 620 includes two opposite planar side walls and two opposite arc-shaped side walls. The two planar side walls and the arc-shaped side walls are alternately connected. The outer surface of one of the arc-shaped side walls is the wind guiding surface 621. The plane where the planar side wall is located is parallel to the radial direction of the cooling sub-tube 510, so as to further reduce the resistance generated by the fixing sleeve 620 to the gas.

[0070] In an alternative embodiment, the air distribution holes in two adjacent air distribution walls 600 are arranged opposite to each other or are offset. In the latter embodiment, the air distribution holes in two adjacent air distribution walls 600 are offset. That is to say, in the direction perpendicular to the axial direction of the gas distribution assembly 200, the air distribution holes in two adjacent air distribution walls 600 are not opposite to each other. In this way, the situation of direct flow between the air distribution holes in two adjacent air distribution walls 600 can be avoided, thereby further improving the air flow equalizing effect of the air distribution wall 600 on the gas.

[0071] For example, taking the case where there are two air distribution walls 600 in the gas distribution layer 210 as an example, each air distribution sub-wall 610 of the innermost air distribution wall 600 has 3 air distribution holes, and the included angle between the central axes of two adjacent air distribution holes is 2.5°. The middle air distribution hole of each air distribution sub-wall 610 is opposite to the cooling sub-tube 510 outside it; each air distribution sub-wall 610 of the outermost air distribution wall 600 has 5 air distribution holes, and the included angle between the central axes of two adjacent air distribution holes is 2°. The middle air distribution hole of each air distribution sub-wall 610 is opposite to the cooling sub-tube 510 inside it.

[0072] And / or, in an alternative embodiment, the outer peripheral surface of each gas distribution layer 210 is a gas distribution wall 211. A plurality of distribution holes are provided on the gas distribution wall 211 along its circumferential direction. The distribution holes of the gas distribution wall 211 are arranged in a staggered manner with the air distribution holes of the air equalizing wall 600 close to the gas distribution wall 211. In this embodiment, the distribution holes of the gas distribution wall 211 are arranged in a staggered manner with the air distribution holes of the air equalizing wall 600 close to the gas distribution wall 211. That is to say, in the direction perpendicular to the axial direction of the gas distribution assembly 200, the distribution holes of the gas distribution wall 211 are not opposite to the air distribution holes of the air equalizing wall 600 close to the gas distribution wall 211. In this way, the situation of direct flow between the distribution holes and the air distribution holes of the outermost air equalizing wall 600 can be avoided, thereby further improving the air equalizing effect of the gas distribution wall 211 on the gas. Of course, the distribution holes of the gas distribution wall 211 can also be arranged opposite to the air distribution holes of the air equalizing wall 600 close to the gas distribution wall 211.

[0073] In an alternative embodiment, a notch 721 is provided at the top of the partition plate 720. The two sub-cooling chambers are connected through the notch 721. In this embodiment, a notch 721 is provided at the top of the partition plate 720 to connect the two sub-cooling chambers. In this way, when the coolant is introduced into one of the sub-cooling chambers, the air in the sub-cooling chamber can enter the other sub-cooling chamber through the notch 721 and then be discharged from the intake device, thereby avoiding cavitation in the sub-cooling chamber.

[0074] In an alternative embodiment, there are at least two groups of cooling tubes 500. Each group of cooling tubes 500 includes a plurality of cooling tubes 500 spaced apart along the circumferential direction of the gas distribution assembly 200. The at least two groups of cooling tubes 500 are spaced apart along the radial direction of the gas distribution assembly 200. The cooling tubes 500 in adjacent two groups of cooling tubes 500 are arranged in a staggered manner. In this embodiment, there are at least two groups of cooling tubes 500, and the cooling tubes 500 in adjacent two groups of cooling tubes 500 are arranged in a staggered manner. That is to say, in the radial direction of the gas distribution assembly 200, the cooling tubes 500 in adjacent two groups of cooling tubes 500 are not opposite to each other. In this way, not only can the distance between adjacent two groups of cooling tubes 500 be reduced to reduce the space occupied by the cooling tubes 500 in the gas distribution assembly 200, but also the formation of an air flow dead zone between the cooling tubes 500 in adjacent two groups of cooling tubes 500 can be avoided. Of course, there can also be only one group of cooling tubes 500.

[0075] In an alternative embodiment, the cooling structure 400 includes a cooling sleeve 710 surrounding the intake assembly. The cooling sleeve 710 includes an upper cover 712 and a lower cover 713. The upper cover 712 covers the lower cover 713. The upper cover 712, the lower cover 713 and the intake assembly surround to form a first cooling chamber 410. In this embodiment, the upper cover 712, the lower cover 713 and the intake assembly surround to form a first cooling chamber 410, and the upper cover 712 and the lower cover 713 are detachable, so that it is convenient to maintain structures such as the first cooling chamber 410.

[0076] In an alternative embodiment, the cooling jacket 710 further includes a jacket body 711 that surrounds the intake assembly and is located above the first cooling chamber 410; an inlet channel 421 and an outlet channel 422 are provided in the jacket body 711, and the inlet channel 421 and the outlet channel 422 are respectively connected to two sub-cooling chambers. Optionally, the inlet channel 421 has an inlet 423 for the cooling medium to enter, and the outlet channel 422 has an outlet 424 for discharging the cooling medium.

[0077] In this embodiment, the cooling jacket 711 further includes a jacket body 711 that surrounds the intake assembly. An inlet channel 421 and an outlet channel 422 are formed in the jacket body 711. Therefore, the inlet channel 421 and the outlet channel 422 also surround the intake assembly. The cooling medium in the inlet channel 421 and the outlet channel 422 can cool the gas in the intake assembly.

[0078] During the process, it is necessary to introduce a cleaning gas into the process chamber 810 through the cleaning gas channel 730 to clean the process chamber 810. To prevent the temperature of the cleaning gas from being too high and causing unnecessary etching, in an alternative embodiment, a cleaning gas channel 730 is provided in the intake device, and a part of the cleaning gas channel 730 is provided in the partition plate 720. Specifically, the cleaning gas channel 730 is used to communicate with the process chamber 810. The cleaning gas channel 730 has a cleaning gas inlet 731, and the cleaning gas can enter the cleaning gas channel 730 and the process chamber 810 through the cleaning gas inlet 731, thereby cleaning the process chamber 810. In this embodiment, the partition plate 720 divides the first cooling chamber 410 into two sub-cooling chambers. That is to say, the two side surfaces of the partition plate 720 are the side walls of the two sub-cooling chambers, and a part of the cleaning gas channel 730 is provided in the partition plate 720. Therefore, the cooling medium in the two sub-cooling chambers can cool the cleaning gas in the part of the cleaning gas channel 730 provided in the partition plate 720, thereby preventing the temperature of the cleaning gas from being too high and causing unnecessary etching.

[0079] In an alternative embodiment, the intake device further includes a cleaning chamber connected to the cleaning gas channel 730. The cleaning chamber surrounds the intake assembly. The cleaning gas channel is located above the cleaning chamber. The cleaning gas channel 730 has an exposed cleaning gas inlet 731, and the cleaning chamber has a cleaning gas outlet 940 that can communicate with the process chamber 810 of the semiconductor device. In this embodiment, a cleaning gas channel 730 is provided on the intake device. By injecting a cleaning gas into the cleaning gas channel 730 through the cleaning gas inlet 731, the process chamber 810 can be cleaned to ensure the cleanliness of the process chamber 810.

[0080] In an alternative embodiment, the cleaning chamber includes a first cleaning chamber 910 and a second cleaning chamber 920 that are connected and communicate with each other. The cleaning gas channel 730 communicates with the first cleaning chamber 910. The second cleaning chamber 920 is disposed around the first cleaning chamber 910. The cleaning gas outlet 940 is provided in the second cleaning chamber 920. The connection between the cleaning gas channel 730 and the first cleaning chamber 910 is located on the side of the first cleaning chamber 910 away from the second cleaning chamber 920. In this embodiment, since the connection between the cleaning gas channel 730 and the first cleaning chamber 910 is located on the side of the first cleaning chamber 910 away from the second cleaning chamber 920, the cleaning gas entering the first cleaning chamber 910 will first fill the first cleaning chamber 910 and then enter the second cleaning chamber 920 and finally enter the process chamber 810. In this way, the first cleaning chamber 910 can be used to stabilize the pressure of the cleaning gas so that the cleaning gas enters the second cleaning chamber 920 and the process chamber 810 evenly. Of course, the connection between the cleaning gas channel 730 and the first cleaning chamber 910 can also be located in the middle, on the right side, etc. of the first cleaning chamber 910; or the cleaning chamber can also be an integral chamber.

[0081] To further improve the uniformity of the cleaning gas, in an alternative embodiment, the first cleaning chamber 910 and the second cleaning chamber 920 are separated by an air outlet wall 930, and a plurality of third flow equalizing holes 931 are provided at intervals along the circumferential direction of the air outlet wall 930. The number of the cleaning gas outlets 940 is multiple, and each cleaning gas outlet 940 is provided at intervals at the bottom of the second cleaning chamber 920. In this embodiment, a plurality of third flow equalizing holes 931 are provided on the air outlet wall 930 separating the first cleaning chamber 910 and the second cleaning chamber 920. The third flow equalizing holes 931 can further improve the uniformity of the cleaning gas entering the second cleaning chamber 920 so as to improve the uniformity of the cleaning gas entering the process chamber 810. In addition, the cleaning gas outlets 940 are provided at the bottom of the second cleaning chamber 920. In this way, the cleaning gas entering the second cleaning chamber 920 will first fill the second cleaning chamber 920 and then enter the process chamber 810 evenly, so as to further improve the uniformity of the cleaning gas entering the process chamber 810, and further make the cleanliness of each area of the process chamber 810 consistent.

[0082] Optionally, the intake device further includes a cleaning gas outlet ring 732. The cleaning gas outlet ring 732 is stacked below the lower cover 713. The cleaning gas outlet ring 732 and the air outlet wall 930 surround and form the second cleaning chamber 920. The cleaning gas outlet ring 732 has a cleaning gas outlet 940, and the cleaning gas outlet 940 can be provided on the side of the cleaning gas outlet ring 732 facing away from the lower cover 713.

[0083] In an alternative embodiment, the number of the third flow equalizing holes 932 is less than the number of the cleaning gas outlets 940, so as to ensure that the cleaning gas first fills the first cleaning chamber 910 and then enters the second cleaning chamber 920.

[0084] In an alternative embodiment, the cleaning gas outlet 940 and the third flow equalizing hole 931 are arranged offset in the radial direction of the intake column 100, so as to avoid the cleaning gas ejected from the third flow equalizing hole 931 directly entering the cleaning gas outlet 940, thereby further improving the uniformity of the cleaning gas entering the process chamber 810.

[0085] In an alternative embodiment, the intake device further includes a sealing ring 740. The sealing ring 740 is arranged on the outer wall of the intake device facing away from the second cooling chamber 420. The sealing ring 740 is used for the intake device to be sealingly fitted with the inner wall of the installation opening of the semiconductor device. Optionally, the sealing ring 740 can be arranged on the side of the upper cover 712 facing away from the lower cover 713; the installation opening can be arranged on the process chamber 810. In this embodiment, the intake device can be assembled to the installation opening of the semiconductor device. In order to ensure the tightness of the process chamber 810, the intake device in this embodiment is provided with a sealing ring 740, so as to seal the gap between the intake device and the installation hole; in addition, the sealing ring 740 in this embodiment is arranged on the outer wall of the intake device facing away from the second cooling chamber 420, that is to say, the sealing ring 740 faces the second cooling chamber 420. Therefore, the cooling medium in the second cooling chamber 420 can cool down the sealing ring 740, so that there is no need to additionally set up a cooling system to cool down the sealing ring 740.

[0086] As Figure 12 shown, an embodiment of the present application also discloses a semiconductor device, including a process chamber 810 and the intake device as described in any of the above embodiments. The intake device is used to supply gas to the process chamber 810. Optionally, the gas distribution layer 210 of the intake device is located in the process chamber 810, so as to supply gas containing source materials to the gas distribution layer 210. A wafer carrier device 820 is further arranged in the process chamber 810. A heating device 830 is arranged on the wafer carrier device 820. The heating device 830 is used to heat the wafer carrier device 820, so as to heat the substrate arranged on the wafer carrier device 820. The gas containing source materials reacts and deposits on the surface of the heated substrate to form an epitaxial film. The reaction by-products can be discharged from the process chamber 810 through the exhaust gas channel 811.

[0087] In the above embodiments of the present application, the differences between the various embodiments are mainly described. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a more optimal embodiment. Considering the simplicity of the writing, it will not be elaborated here. The embodiments of the present application have been described above with reference to the accompanying drawings. However, the present application is not limited to the above specific embodiments. The above specific embodiments are merely illustrative and not restrictive. Under the inspiration of the present application, those of ordinary skill in the art can also make many forms without departing from the purpose of the present application and the scope protected by the claims, and all belong to the protection scope of the present application.

Claims

1. An air inlet device for a semiconductor device, characterized in that, it includes an air inlet column (100) and a flow equalizing member arranged around the air inlet column (100); at least two spaced air inlet channels (110) are provided in the air inlet column (100), the flow equalizing member includes at least two sequentially sleeved air inlet chambers (320), and each air inlet channel (110) is correspondingly communicated with one air inlet chamber (320); each of the air inlet channels (110) includes a first air inlet sub-channel and a second air inlet sub-channel (111) located above the first air inlet sub-channel; the air inlet (101) of the second air inlet sub-channel (111) is exposed on the surface of the air inlet column (100), and the air outlet of the second air inlet sub-channel (111) is communicated with the first air inlet sub-channel; the first air inlet sub-channel includes at least two air outlet segments (112) intersecting with the axis of the air inlet column (100), the included angle between any two adjacent air outlet segments (112) is the same, and the included angle between each air outlet segment (112) and the axis of the air inlet column (100) is the same; the first ends of each of the air outlet segments (112) are all communicated with the air outlet of the second air inlet sub-channel (111), and the second ends of each of the air outlet segments (112) are all communicated with the corresponding air inlet chamber (320); the first air inlet sub-channels belonging to different air inlet channels (110) are spaced along the axis direction of the air inlet column (100).

2. The air inlet device according to claim 1, characterized in that, the flow equalizing member further includes at least two flow equalizing chambers (310) spaced along the axis direction of the air inlet column (100), the other end of each air outlet segment (112) is communicated with the air inlet chamber (320) through one flow equalizing chamber (310), and a plurality of first flow equalizing holes (311) are circumferentially spaced on the flow equalizing chamber (310).

3. The air inlet device according to claim 2, characterized in that, a flow equalizing ring (330) is provided in each of the flow equalizing chambers (310), the flow equalizing ring (330) is arranged around the air inlet column (100) and divides the flow equalizing chamber (310) into two sub-flow equalizing chambers stacked along the axis direction of the air inlet column (100); the flow equalizing ring (330) has a plurality of second flow equalizing holes (331) communicating the two sub-flow equalizing chambers; the first flow equalizing holes (311) are located on one of the two sub-flow equalizing chambers, and the second end of the air outlet segment (112) is communicated with the other sub-flow equalizing chamber of the two sub-flow equalizing chambers.

4. The air inlet device according to claim 3, characterized in that, the axis direction of the air inlet column (100) is the vertical direction, and the flow equalizing ring (330) is located above the second end of the corresponding air outlet segment (112).

5. The air inlet device according to claim 3, characterized in that, The number of the second flow-uniform holes (331) on each layer of the flow-uniform ring (330) decreases from top to bottom; and / or the flow areas of the second flow-uniform holes (331) on each layer of the flow-uniform ring (330) decrease from top to bottom.

6. The air intake device according to claim 2, It is characterized in that The flow-uniform cavities (310) are sequentially distributed in the vertical direction, and the air inlet cavities (320) corresponding to the flow-uniform cavities (310) sequentially distributed from top to bottom are sequentially sleeved from outside to inside.

7. The air intake device according to claim 1, It is characterized in that The extension direction of each of the air outlet sections (112) of the same first air inlet sub-channel is perpendicular to the axis of the air inlet column (100).

8. The air intake device according to claim 1, It is characterized in that The air inlets (101) of the second air inlet sub-channels (111) belonging to different air inlet channels (110) are all exposed on the first end surface of the air inlet column (100). The center line of the second air intake sub-channel (111) of one of the air intake channels (110) is collinear with the axis of the air intake column (100), and the air outlet section (112) of the air intake channel (110) is closer to the first end surface than the air outlet sections (112) of the other air intake channels (110). The second air intake sub-channels (111) of the other air intake channels (110) each comprise a first connecting section (113), a second connecting section (114) and a third connecting section (115) which are connected in sequence, the center line of the third connecting section (115) being colinear with the axis of the air intake column (100), the second connecting section (114) being bent relative to the third connecting section (115), and the first connecting section (113) being bent relative to the second connecting section (114), One end of each of the first connecting sections (113) facing away from the second connecting section (114) is the air inlet (101) of the corresponding second air inlet sub-channel (111), and one end of each of the third connecting sections (115) facing away from the second connecting section (114) is the air outlet of the corresponding second air inlet sub-channel (111).

9. The air intake device according to claim 8, It is characterized in that The air intake column (100) comprises a column body (120) and at least one embedded block (130); at least one embedded groove (121) is provided on the outer peripheral surface of the column body (120); the embedded block (130) is embedded in the corresponding embedded groove (121); a first gas groove is provided on the bottom wall of the embedded groove (121); a second gas groove (131) is provided on a side of the embedded block (130) facing the bottom wall; the first gas groove and the second gas groove (131) together form the corresponding third connecting section (115).

10. The air intake device according to claim 1, It is characterized in that The intake device further includes a gas distribution assembly (200), a part of the intake column (100) is located inside the gas distribution assembly (200), the gas distribution assembly (200) includes at least two gas distribution layers (210) stacked in the axial direction of the intake column (100), and each intake cavity (320) is in one-to-one correspondence and communication with each gas distribution layer (210).

11. The intake device according to claim 1, wherein, the intake device further includes a cleaning gas channel (730) and a cleaning cavity that are in communication with each other. The cleaning gas channel (730) and the cleaning cavity surround the flow equalizing member. The cleaning gas channel (730) is located above the cleaning cavity. The cleaning gas channel (730) has an exposed cleaning gas inlet (731), and the cleaning cavity has a cleaning gas outlet (940) that can be in communication with the process chamber (810) of the semiconductor device.

12. The intake device according to claim 11, wherein, the cleaning cavity includes a first cleaning cavity (910) and a second cleaning cavity (920) that are in communication with each other. The cleaning gas channel (730) is in communication with the first cleaning cavity (910). The second cleaning cavity (920) surrounds the first cleaning cavity (910). The cleaning gas outlet (940) is provided in the second cleaning cavity (920). The communication location between the cleaning gas channel (730) and the first cleaning cavity (910) is located on a side of the first cleaning cavity (910) away from the second cleaning cavity (920).

13. The intake device according to claim 12, wherein, the first cleaning cavity (910) and the second cleaning cavity (920) are separated by an air outlet wall (930), and a plurality of third flow equalizing holes (931) are provided at intervals along the circumferential direction of the air outlet wall (930). The number of the cleaning gas outlets (940) is plural, and each cleaning gas outlet (940) is provided at intervals at the bottom of the second cleaning cavity (920).

14. The intake device according to claim 13, wherein, the cleaning gas outlet (940) and the third flow equalizing hole (931) are arranged in a staggered manner in the radial direction of the intake column (100).

15. A semiconductor device, wherein, it includes a process chamber and the intake device according to any one of claims 1 to 14; the intake device is used to supply gas to the process chamber.

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