Corrosion detection method for sub-surface damage of indium phosphide wafer
By extracting and analyzing the image feature information of the subsurface damage layer and corrosion liquid of the indium phosphide wafer, the problem of corrosion detection relies on subjective experience in the prior art is solved, and more efficient and reliable corrosion process detection is achieved.
Patent Information
- Application Number
- CN202510248596.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-04
- Publication Date
- 2025-06-13
AI Technical Summary
The existing corrosion detection methods for subsurface damage of indium phosphide wafers rely on the subjective experience of the operator, making it difficult to accurately evaluate the corrosion process, and lack objective and quantitative evaluation standards, resulting in low repeatability and reliability of the detection.
By obtaining the image of the wafer subsurface damage layer and the corrosion liquid image at different corrosion moments, the image processing algorithm is used to extract the corrosion pit feature information and corrosion liquid feature information, quantifying the characteristic change trend of the corrosion pit and corrosion liquid, and determining the end time of the corrosion process.
It improves the accuracy and reliability of corrosion process detection, can more accurately quantify the morphological changes of corrosion pits and corrosion liquid characteristics, and improves the repeatability and efficiency of detection.
Smart Images
Figure CN120147280A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor detection technology, and particularly to a corrosion detection method for subsurface damage of indium phosphide wafers. Background Art
[0002] Indium phosphide (InP), as an important semiconductor material, has the advantages of high photoelectric conversion efficiency, good thermal conductivity, strong radiation resistance, high saturated electron drift velocity, and large bandgap. Indium phosphide substrates are widely used in the production of devices such as sensors, radio frequency devices, lasers, and detectors, and have broad application prospects in the fields of optoelectronics and microelectronics.
[0003] The preparation process of indium phosphide wafers usually includes the following steps: crystal growth, crystal cutting, wafer grinding, polishing, and cleaning. Due to the soft and brittle texture of indium phosphide, subsurface damage (SSD) is easily generated in the crystal cutting and wafer grinding processes, and the existence of SSD seriously affects the processing efficiency and wafer quality of indium phosphide wafers.
[0004] The subsurface damage detection methods of indium phosphide wafers can be divided into destructive detection techniques and non-destructive detection techniques according to the different degrees of damage to the material. Among them, due to the limited detection accuracy of non-destructive detection techniques, only qualitative analysis of subsurface damage can be performed, while destructive detection techniques expose subsurface damage information for microscopic observation by locally or completely destroying the wafer material. Therefore, destructive detection techniques, including chemical corrosion detection and profile microscopy detection, have the characteristics of clear detection mechanisms and can obtain richer subsurface damage information.
[0005] When evaluating the corrosion process of existing corrosion detection methods for subsurface damage of indium phosphide wafers, it usually relies on the subjective experience of operators, is easily affected by subjective factors, and is difficult to accurately evaluate the corrosion process. Moreover, due to the lack of objective and quantitative evaluation criteria, the repeatability and reliability of corrosion detection of subsurface damage are relatively low. At the same time, traditional corrosion detection methods are difficult to accurately capture the subtle changes in the subsurface damage layer and corrosion liquid of the wafer, which limits the accuracy and efficiency of corrosion process judgment. Summary of the Invention
[0006] In order to overcome the defects and deficiencies of the prior art, this application provides a corrosion detection method for subsurface damage of indium phosphide wafers, which effectively improves the detection accuracy and detection efficiency of the corrosion process by quantitatively evaluating the change trends of corrosion pit characteristics and corrosion liquid characteristics of the subsurface damage layer of the wafer at different corrosion times.
[0007] To achieve the above object, this application adopts the following technical solutions: In a first aspect, the present application provides a corrosion detection method for subsurface damage of indium phosphide wafers, including the following steps: Obtain images of the subsurface damage layer of the wafer and images of the etchant at different corrosion times; Extract the feature information of the corrosion pits in the image of the subsurface damage layer of the wafer and the feature information of the etchant in the image of the etchant respectively through an image processing algorithm; Evaluate the change trend of the corrosion pit features according to the corrosion pit feature information; Evaluate the change trend of the etchant features according to the etchant feature information; Determine the end time of the corrosion process by combining the evaluation results of the change trend of the corrosion pit features and the evaluation results of the change trend of the etchant features.
[0008] Preferably, the evaluating the change trend of the corrosion pit features according to the corrosion pit feature information includes: Obtain the corrosion pit feature information at different corrosion times, arrange the corrosion pit feature information in chronological order to obtain the corrosion pit feature time series information; Calculate the change amount of the corrosion pit features at adjacent corrosion times through the corrosion pit feature time series information; Take the ratio of the change amount of the corrosion pit features at adjacent corrosion times to the time interval between adjacent corrosion times as the corrosion pit feature change index, and the corrosion pit feature change index is used to quantitatively evaluate the change trend of the corrosion pit features.
[0009] Preferably, the calculating the change amount of the corrosion pit features at adjacent corrosion times through the corrosion pit feature time series information includes: Calculate the change amount of the number of corrosion pits, the change amount of the total area of the corrosion pits, and the change amount of the average roundness of the corrosion pits on the subsurface damage layer of the wafer at adjacent corrosion times respectively through the corrosion pit feature time series information, where the change amount of the number of corrosion pits is the difference in the number of corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times, the change amount of the total area of the corrosion pits is the difference in the total area of the corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times, and the change amount of the average roundness of the corrosion pits is the difference in the average roundness of the corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times; Perform weighted summation on the change amount of the number of corrosion pits, the change amount of the total area of the corrosion pits, and the change amount of the average roundness of the corrosion pits to obtain the change amount of the corrosion pit features at adjacent corrosion times.
[0010] Preferably, the evaluating the change trend of the etchant features according to the etchant feature information includes: Obtain the etchant feature information at different corrosion times, and the etchant feature information includes the color feature of the etchant and the turbidity feature of the etchant; Calculate the Euclidean distance of the etching solution color characteristics at adjacent etching times, and use the ratio of the Euclidean distance of the etching solution color characteristics to the time interval between adjacent etching times as the etching solution color change rate; Use the ratio of the difference in the turbidity of the etching solution at adjacent etching times to the time interval between adjacent etching times as the etching solution turbidity change rate; Perform weighted summation on the etching solution color change rate and the etching solution turbidity change rate to obtain an etching rate change index, which is used to quantitatively evaluate the change trend of the etching solution characteristics.
[0011] Preferably, the method for respectively extracting the etching pit feature information in the image of the subsurface damage layer of the wafer and the etching solution feature information in the etching solution image through an image processing algorithm includes: Obtain the images of the subsurface damage layer of the wafer and the etching solution at different etching times and perform image preprocessing, where the image preprocessing includes image denoising and image enhancement; Extract the etching pit feature information in the preprocessed image of the subsurface damage layer of the wafer through the Otsu threshold segmentation algorithm, and the etching pit feature information includes the number of etching pits, the area of the etching pits, and the roundness of the etching pits; Extract the etching solution feature information in the preprocessed etching solution image through a color space conversion algorithm and an image grayscale processing algorithm. The etching solution feature information includes the etching solution color feature and the etching solution turbidity feature, where the etching solution turbidity feature is the standard deviation of the grayscale image of the etching solution.
[0012] Preferably, the method for determining the end time of the etching process by combining the evaluation results of the change trend of the etching pit characteristics and the evaluation results of the change trend of the etching solution characteristics includes: Obtain the etching pit feature change index and the etching solution feature change index; Perform weighted summation on the etching pit feature change index and the etching solution feature change index to obtain an etching speed change index; When the etching speed change index is greater than or equal to a preset etching speed change threshold, it indicates that the etching process has not ended. When the etching speed change index is less than the preset etching speed change threshold, it indicates that the etching process has ended.
[0013] In a second aspect, the present application provides an etching detection system for subsurface damage of indium phosphide wafers, including: An image acquisition module for acquiring images of the subsurface damage layer of the wafer and the etching solution at different etching times; A feature extraction module for respectively extracting the etching pit feature information in the image of the subsurface damage layer of the wafer and the etching solution feature information in the etching solution image through an image processing algorithm; A first trend evaluation module for evaluating the change trend of the etching pit characteristics according to the etching pit feature information; A second trend evaluation module, configured to evaluate the change trend of the etching solution characteristics based on the etching solution characteristic information; An etching process evaluation module, configured to determine the end time of the etching process by combining the evaluation results of the change trend of the etching pit characteristics and the evaluation results of the change trend of the etching solution characteristics.
[0014] In a third aspect, the present application provides an electronic device, including: a processor and a memory, wherein a computer program callable by the processor is stored in the memory, and the processor executes an etching detection method for subsurface damage of an indium phosphide wafer by calling the computer program stored in the memory.
[0015] In a fourth aspect, the present application provides a computer-readable storage medium storing instructions, which when run on a computer, cause the computer to execute an etching detection method for subsurface damage of an indium phosphide wafer.
[0016] Compared with the prior art, the present application has the following advantages and beneficial effects: By extracting the etching pit characteristic information in the subsurface damage layer image of the wafer at different etching times and the etching solution characteristic information in the etching solution image, the present application accurately quantifies the change trend of the etching pit morphology in the subsurface damage layer of the wafer and the change trend of the etching solution characteristics, effectively improving the accuracy and reliability of the etching process detection. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Other features, objectives, and advantages of the present application will become more apparent by reading the detailed description of the non-limiting embodiments with reference to the following drawings: Figure 1 is an overall flowchart of the etching detection method for subsurface damage of an indium phosphide wafer provided by an embodiment of the present application; Figure 2 is a schematic diagram of the subsurface damage layer structure provided by an embodiment of the present application; Figure 3 is a schematic diagram of the structure of the etching detection system for subsurface damage of an indium phosphide wafer provided by an embodiment of the present application; Figure 4 is a schematic diagram of the structure of the electronic device provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0018] The technical solutions of the present application will be described in detail below with reference to the drawings and specific embodiments. It should be understood that the specific features in the embodiments of the present application and the embodiments are detailed descriptions of the technical solutions of the present application, rather than limitations on the technical solutions of the present application. Without conflict, the technical features in the embodiments of the present application and the embodiments can be combined with each other.
[0019] Please refer to Figure 1 ,Figure 1 It is a schematic diagram of the overall process of the corrosion detection method for subsurface damage of indium phosphide wafers provided by an embodiment of the present application, which specifically includes the following steps: S110: Obtain images of the subsurface damage layer of the wafer and images of the etchant at different corrosion times.
[0020] S120: Respectively extract the corrosion pit feature information in the image of the subsurface damage layer of the wafer and the etchant feature information in the image of the etchant through an image processing algorithm; Please refer to Figure 2 , Figure 2 It is a schematic diagram of the subsurface damage layer structure provided by an embodiment of the present application. The subsurface damage layer of the polished indium phosphide wafer includes a crack layer, a deformed layer, and a matrix layer. Among them, the crack layer is the main defect layer of the subsurface damage, and the microcrack density and length distribution gradually weaken inward. The deformed layer is the plastic deformation region of the wafer, and there is no obvious boundary difference in the internal atomic structure arrangement between it and the matrix layer of the wafer itself. When chemically etching the wafer, the etchant penetrates into the subsurface layer of the wafer through the gaps of the microcracks and fully contacts the material, resulting in a relatively large corrosion rate and corrosion thickness. As the corrosion time increases, the upper crack region is gradually etched away, the depth and number of cracks decrease, and its corrosion rate will inevitably slow down. After penetrating into the matrix layer, a constant corrosion rate will be maintained. The morphology, distribution, and change trend of the corrosion pits can reveal the corrosion process of the subsurface damage of the wafer, while the etchant feature information reflects the activity change of the etchant and its interaction with the wafer material. By extracting and analyzing the corrosion pit feature information and the etchant feature information, the dynamic change of the corrosion process can be monitored, so as to more accurately evaluate the end time of the corrosion process. Respectively extract the corrosion pit feature information in the image of the subsurface damage layer of the wafer and the etchant feature information in the image of the etchant through an image processing algorithm, including: Obtain images of the subsurface damage layer of the wafer and images of the etchant at different corrosion times and perform image preprocessing. The image preprocessing includes image denoising and image enhancement; Extract the corrosion pit feature information in the preprocessed image of the subsurface damage layer of the wafer through the Otsu threshold segmentation algorithm. The corrosion pit feature information includes the number of corrosion pits, the area of corrosion pits, and the roundness of corrosion pits; Extract the etchant feature information in the preprocessed image of the etchant through the color space conversion algorithm and the image grayscale processing algorithm. The etchant feature information includes the color feature of the etchant and the turbidity feature of the etchant. Among them, the turbidity feature of the etchant is the standard deviation of the grayscale image of the etchant.
[0021] S130: Evaluate the change trend of the corrosion pit features according to the corrosion pit feature information; By quantitatively analyzing the change amounts of characteristics such as the number of corrosion pits, the area of corrosion pits, and the roundness of corrosion pits in the subsurface damage layer of the wafer at different corrosion times, the dynamic changes of the corrosion process can be accurately reflected, which is beneficial to identifying the change trend of the corrosion rate, especially the expansion and morphological changes of corrosion pits at different time intervals. Furthermore, it provides a basis for judging whether the corrosion process is approaching the end. Evaluating the change trend of corrosion pit characteristics based on the corrosion pit characteristic information includes: Obtain the corrosion pit characteristic information at different corrosion times, arrange the corrosion pit characteristic information in chronological order to obtain the corrosion pit characteristic time series information; Calculate the change amount of corrosion pit characteristics at adjacent corrosion times through the corrosion pit characteristic time series information; Take the ratio of the change amount of corrosion pit characteristics at adjacent corrosion times to the time interval between adjacent corrosion times as the corrosion pit characteristic change index, and the corrosion pit characteristic change index is used to quantitatively evaluate the change trend of corrosion pit characteristics; Calculating the change amount of corrosion pit characteristics at adjacent corrosion times through the corrosion pit characteristic time series information includes: Calculate the change amount of the number of corrosion pits, the change amount of the total area of corrosion pits, and the change amount of the average roundness of corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times respectively through the corrosion pit characteristic time series information. Among them, the change amount of the number of corrosion pits is the difference in the number of corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times. The calculation formula for the change amount of the number of corrosion pits can be: ; In the formula represents the number of corrosion pits in the subsurface damage layer of the wafer at time represents the number of corrosion pits in the subsurface damage layer of the wafer at time represents the change amount of the number of corrosion pits at adjacent corrosion times; The change amount of the total area of corrosion pits is the difference in the total area of corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times. The calculation formula for the change amount of the total area of corrosion pits can be: ; In the formula represents the area of the th corrosion pit in the subsurface damage layer of the wafer at time represents the total area of corrosion pits in the subsurface damage layer of the wafer at time represents the area of the th corrosion pit in the subsurface damage layer of the wafer at time represents the total area of corrosion pits in the subsurface damage layer of the wafer at time Indicates the change in the total area of corrosion pits at adjacent corrosion times; The change in the average roundness of corrosion pits is the difference in the average roundness of the corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times. The calculation formula for the change in the average roundness of corrosion pits can be: ; In the formula represents the perimeter of the th corrosion pit in the subsurface damage layer of the wafer at time represents the average roundness of the corrosion pits in the subsurface damage layer of the wafer at time represents the perimeter of the th corrosion pit in the subsurface damage layer of the wafer at time represents the average roundness of the corrosion pits in the subsurface damage layer of the wafer at time represents pi, represents the change in the average roundness of the corrosion pits at adjacent corrosion times; The change in the number of corrosion pits, the change in the total area of corrosion pits, and the change in the average roundness of corrosion pits are weighted and summed to obtain the change in the corrosion pit characteristics at adjacent corrosion times.
[0022] S140: Evaluate the change trend of the corrosion solution characteristics based on the corrosion solution characteristic information; By calculating the Euclidean distance and turbidity difference of the corrosion solution color characteristics, the chemical property changes of the corrosion solution at different corrosion times can be quantitatively analyzed. The color change rate and turbidity change rate can reveal the reaction degree between the corrosion solution and the wafer and the change in the activity of the corrosion solution, which helps to monitor the intensity of the reaction of the corrosion solution on the wafer surface and the corrosion rate, thus providing a reliable basis for judging the end time of the corrosion process. Evaluating the change trend of the corrosion solution characteristics based on the corrosion solution characteristic information includes: Obtain the corrosion solution characteristic information at different corrosion times. The corrosion solution characteristic information includes the corrosion solution color characteristic and the corrosion solution turbidity characteristic; Calculate the Euclidean distance of the corrosion solution color characteristics at adjacent corrosion times, and take the ratio of the Euclidean distance of the corrosion solution color characteristics to the time interval between adjacent corrosion times as the corrosion solution color change rate. Among them, the calculation formula for the Euclidean distance of the corrosion solution color characteristics at adjacent corrosion times can be: ; In the formula represents the red component value in the corrosion solution color characteristic at time represents the red component value in the corrosion solution color characteristic at time represents the green component value in the color feature of the etching solution at a certain moment, represents the green component value in the color feature of the etching solution at a certain moment, represents the blue component value in the color feature of the etching solution at a certain moment, represents the blue component value in the color feature of the etching solution at a certain moment, represents the Euclidean distance of the color features of the etching solution at adjacent etching moments; The calculation formula of the color change rate of the etching solution can be: ; In the formula represents the Euclidean distance of the color features of the etching solution at adjacent etching moments, represents the time interval between adjacent etching moments, represents the color change rate of the etching solution; Take the ratio of the difference in the turbidity of the etching solution between adjacent etching moments to the time interval between adjacent etching moments as the turbidity change rate of the etching solution; Perform a weighted sum of the color change rate of the etching solution and the turbidity change rate of the etching solution to obtain the corrosion rate change index, and the corrosion rate change index is used to quantitatively evaluate the change trend of the etching solution characteristics.
[0023] S150: Determine the end time of the etching process by combining the evaluation results of the change trend of the etching pit characteristics and the evaluation results of the change trend of the etching solution characteristics; By comprehensively considering the expansion of the etching pits in the subsurface damage layer of the wafer and the change in the reaction rate of the etching solution, it reflects the actual progress of the etching process from multiple dimensions. When the corrosion rate change index reaches the preset threshold, it indicates that the etching has not ended. On the contrary, it means that the etching process is approaching completion, effectively avoiding misjudging the etching process due to the change of a single feature. Determine the end time of the etching process by combining the evaluation results of the change trend of the etching pit characteristics and the evaluation results of the change trend of the etching solution characteristics, including: Obtain the corrosion pit characteristic change index and the etching solution characteristic change index; Perform a weighted sum of the corrosion pit characteristic change index and the etching solution characteristic change index to obtain the corrosion rate change index; When the corrosion rate change index is greater than or equal to the preset corrosion rate change threshold, it indicates that the etching process has not ended. When the corrosion rate change index is less than the preset corrosion rate change threshold, it indicates that the etching process has ended.
[0024] It should be noted that the value-taking methods of the set parameters such as the weighting weight and the preset corrosion rate change threshold in the embodiments of the present application are as follows: by obtaining the images of the subsurface damage layer of the wafer and the image of the etching solution at different etching times to construct a data set, substituting it into the calculation of the corrosion rate change index, and at the same time obtaining the judgment result of the expert on the etching process, importing the corrosion rate change index and the judgment result into the fitting software, and outputting the weighting weight and the preset corrosion rate change threshold that meet the maximum judgment accuracy rate.
[0025] Please refer to Figure 3 , Figure 3 FIG. is a schematic structural diagram of an etching detection system for subsurface damage of an indium phosphide wafer provided by an embodiment of the present application. The embodiment of the present application provides an etching detection system for subsurface damage of an indium phosphide wafer, including: An image acquisition module 210, configured to acquire images of the subsurface damage layer of the wafer and the image of the etching solution at different etching times; A feature extraction module 220, configured to respectively extract the corrosion pit feature information in the image of the subsurface damage layer of the wafer and the etching solution feature information in the image of the etching solution through an image processing algorithm; A first trend evaluation module 230, configured to evaluate the change trend of the corrosion pit features according to the corrosion pit feature information; A second trend evaluation module 240, configured to evaluate the change trend of the etching solution features according to the etching solution feature information; An etching process evaluation module 250, configured to determine the end time of the etching process by combining the evaluation results of the change trend of the corrosion pit features and the evaluation results of the change trend of the etching solution features.
[0026] In the embodiments of the present application, the feature extraction module 220 is configured to respectively extract the corrosion pit feature information in the image of the subsurface damage layer of the wafer and the etching solution feature information in the image of the etching solution through an image processing algorithm. Extracting the corrosion pit feature information in the image of the subsurface damage layer of the wafer and the etching solution feature information in the image of the etching solution through an image processing algorithm includes: Acquiring the images of the subsurface damage layer of the wafer and the image of the etching solution at different etching times and performing image preprocessing, where the image preprocessing includes image denoising and image enhancement; Extracting the corrosion pit feature information in the preprocessed image of the subsurface damage layer of the wafer through the Otsu threshold segmentation algorithm, where the corrosion pit feature information includes the number of corrosion pits, the area of the corrosion pits, and the roundness of the corrosion pits; Extracting the etching solution feature information in the preprocessed image of the etching solution through a color space conversion algorithm and an image grayscale processing algorithm, where the etching solution feature information includes the color feature of the etching solution and the turbidity feature of the etching solution. Among them, the turbidity feature of the etching solution is the standard deviation of the grayscale image of the etching solution.
[0027] In the embodiment of the present application, the first trend evaluation module 230 is used to evaluate the change trend of corrosion pit characteristics according to the corrosion pit characteristic information. Evaluating the change trend of corrosion pit characteristics according to the corrosion pit characteristic information includes: Obtain the corrosion pit characteristic information at different corrosion times, arrange the corrosion pit characteristic information in chronological order to obtain the corrosion pit characteristic time series information; Calculate the change amount of corrosion pit characteristics at adjacent corrosion times through the corrosion pit characteristic time series information; Take the ratio of the change amount of corrosion pit characteristics at adjacent corrosion times to the time interval between adjacent corrosion times as the corrosion pit characteristic change index, and the corrosion pit characteristic change index is used to quantitatively evaluate the change trend of corrosion pit characteristics; Calculating the change amount of corrosion pit characteristics at adjacent corrosion times through the corrosion pit characteristic time series information includes: Calculate the change amount of the number of corrosion pits, the change amount of the total area of corrosion pits, and the change amount of the average roundness of corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times through the corrosion pit characteristic time series information. Among them, the change amount of the number of corrosion pits is the difference in the number of corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times, the change amount of the total area of corrosion pits is the difference in the total area of corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times, and the change amount of the average roundness of corrosion pits is the difference in the average roundness of corresponding corrosion pits in the subsurface damage layer of the wafer at adjacent corrosion times; Perform weighted summation on the change amount of the number of corrosion pits, the change amount of the total area of corrosion pits, and the change amount of the average roundness of corrosion pits to obtain the change amount of corrosion pit characteristics at adjacent corrosion times.
[0028] In the embodiment of the present application, the second trend evaluation module 240 is used to evaluate the change trend of corrosion liquid characteristics according to the corrosion liquid characteristic information. Evaluating the change trend of corrosion liquid characteristics according to the corrosion liquid characteristic information includes: Obtain the corrosion liquid characteristic information at different corrosion times, and the corrosion liquid characteristic information includes the corrosion liquid color characteristic and the corrosion liquid turbidity characteristic; Calculate the Euclidean distance of the corrosion liquid color characteristics at adjacent corrosion times, and take the ratio of the Euclidean distance of the corrosion liquid color characteristics to the time interval between adjacent corrosion times as the corrosion liquid color change rate; Take the ratio of the difference in the turbidity of the corrosion liquid at adjacent corrosion times to the time interval between adjacent corrosion times as the corrosion liquid turbidity change rate; Perform weighted summation on the corrosion liquid color change rate and the corrosion liquid turbidity change rate to obtain the corrosion rate change index, and the corrosion rate change index is used to quantitatively evaluate the change trend of corrosion liquid characteristics.
[0029] In the embodiment of the present application, the corrosion process evaluation module 250 is used to determine the end time of the corrosion process by combining the evaluation results of the corrosion pit characteristic change trend and the evaluation results of the corrosion liquid characteristic change trend. Determine the end time of the corrosion process by combining the evaluation results of the change trend of corrosion pit characteristics and the evaluation results of the change trend of corrosion liquid characteristics, including: Obtain the corrosion pit characteristic change index and the corrosion liquid characteristic change index; Perform weighted summation on the corrosion pit characteristic change index and the corrosion liquid characteristic change index to obtain the corrosion rate change index; When the corrosion rate change index is greater than or equal to the preset corrosion rate change threshold, it indicates that the corrosion process has not ended. When the corrosion rate change index is less than the preset corrosion rate change threshold, it indicates that the corrosion process has ended.
[0030] For the parameters and steps of each unit module in the above corrosion detection system for subsurface damage of indium phosphide wafers of the present application to implement corresponding functions, reference can be made to the parameters and steps in the embodiments of the corrosion detection method for subsurface damage of indium phosphide wafers in the above text, which will not be elaborated here.
[0031] Please refer to Figure 4 , an embodiment of the present invention further provides an electronic device 300, including a memory 310, a processor 320, and a communication bus 330; the memory 310 and the processor 320 are connected through the communication bus 330. The memory 310 stores a corrosion detection method for subsurface damage of indium phosphide wafers that can be loaded and executed by the processor 320 as provided in the above embodiment.
[0032] The memory 310 can be used to store instructions, programs, codes, code sets, or instruction sets. The memory 310 may include a program storage area and a data storage area. Among them, the program storage area can store instructions for implementing the operating system, instructions for at least one function, and instructions for implementing the corrosion detection method for subsurface damage of indium phosphide wafers provided in the above embodiment, etc.; the data storage area can store data involved in the corrosion detection method for subsurface damage of indium phosphide wafers provided in the above embodiment, etc.
[0033] The processor 320 may include one or more processing cores. By running or executing instructions, programs, code sets, or instruction sets stored in the memory 310, and by invoking data stored in the memory 310, the processor 320 performs various functions of this application and processes data. The processor 320 may be at least one of an application specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field programmable gate array (FPGA), a central processing unit (CPU), a controller, a microcontroller, and a microprocessor. It can be understood that for different devices, the electronic devices for implementing the functions of the above-mentioned processor 320 may also be others, and the embodiments of this application do not make specific limitations.
[0034] The communication bus 330 may include a path for transmitting information between the above components. The communication bus 330 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. The communication bus 330 may be divided into an address bus, a data bus, a control bus, etc. For the sake of convenience in representation, Figure 4 only a double arrow is used herein, but it does not mean that there is only one bus or one type of bus.
[0035] The embodiments of this application provide a computer-readable storage medium storing a computer program that can be loaded and executed by a processor and is used for the corrosion detection method of subsurface damage of indium phosphide wafers as provided in the above embodiments.
[0036] In an embodiment of the present application, a computer-readable storage medium may be a tangible device that holds and stores instructions used by an instruction execution device. The computer-readable storage medium may be, but is not limited to, an electrical storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any combination of the foregoing. Specifically, the computer-readable storage medium may be a portable computer disk, a hard disk, a USB flash drive, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a static random access memory (SRAM), a portable compact disk read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, an optical disk, a magnetic disk, a mechanical encoding device, and any combination of the foregoing.
[0037] The term "comprising", "including" or any other variant thereof is intended to cover a non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device.
[0038] The above description is only a preferred embodiment of the present application and an explanation of the applied technical principle. Those skilled in the art should understand that the scope of the application involved in the present application is not limited to the technical solution formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the foregoing application concept. For example, a technical solution formed by mutually replacing the above features with (but not limited to) technical features having similar functions in the present application.
Claims
1. A corrosion detection method for subsurface damage of indium phosphide wafers, characterized in that: The steps include: Obtain images of the wafer subsurface damage layer and the etching solution at different etching times; The characteristic information of the corrosion pit in the wafer sub-surface damage layer image and the characteristic information of the corrosion liquid in the corrosion liquid image are respectively extracted by an image processing algorithm; Evaluate the change trend of corrosion pit characteristics based on corrosion pit characteristic information; Evaluate the changing trend of the characteristics of the corrosive liquid according to the characteristic information of the corrosive liquid; The timing of the end of the corrosion process is determined by combining the evaluation results of the corrosion pit characteristic change trend and the corrosion liquid characteristic change trend.
2. The corrosion detection method for subsurface damage of indium phosphide wafer according to claim 1, characterized in that: The step of evaluating the corrosion pit characteristic change trend according to the corrosion pit characteristic information includes: Acquire corrosion pit feature information at different corrosion times, arrange the corrosion pit feature information in chronological order, and obtain corrosion pit feature time series information; The characteristic variation of the corrosion pits at adjacent corrosion moments is calculated through the characteristic time series information of the corrosion pits; The ratio of the change in corrosion pit characteristics between adjacent corrosion moments to the time interval between adjacent corrosion moments is taken as the corrosion pit characteristic change index, which is used to quantitatively evaluate the trend of corrosion pit characteristic changes.
3. The corrosion detection method for subsurface damage of indium phosphide wafer according to claim 2, characterized in that: The method of calculating the variation of corrosion pit characteristics at adjacent corrosion moments by using corrosion pit characteristic time series information includes: The change in the number of corrosion pits, the change in the total area of corrosion pits and the change in the average roundness of corrosion pits of the wafer sub-surface damage layer at adjacent corrosion moments are calculated respectively through the corrosion pit feature time series information, wherein the change in the number of corrosion pits is the difference in the number of corresponding corrosion pits in the wafer sub-surface damage layer at adjacent corrosion moments, the change in the total area of corrosion pits is the difference in the total area of corresponding corrosion pits in the wafer sub-surface damage layer at adjacent corrosion moments, and the change in the average roundness of corrosion pits is the difference in the average roundness of corresponding corrosion pits in the wafer sub-surface damage layer at adjacent corrosion moments; The change in the number of corrosion pits, the change in the total area of corrosion pits and the change in the average roundness of corrosion pits are weightedly summed to obtain the change in the corrosion pit characteristics at adjacent corrosion moments.
4. The corrosion detection method for subsurface damage of indium phosphide wafer according to claim 1, characterized in that: The step of evaluating the characteristic change trend of the corrosive liquid according to the characteristic information of the corrosive liquid includes: Acquire characteristic information of the corrosion liquid at different corrosion times, where the characteristic information of the corrosion liquid includes color characteristics of the corrosion liquid and turbidity characteristics of the corrosion liquid; The Euclidean distance of the color characteristics of the etching liquid at adjacent etching moments is calculated, and the ratio of the Euclidean distance of the color characteristics of the etching liquid to the time interval between adjacent etching moments is taken as the color change rate of the etching liquid; The ratio of the difference in turbidity of the corrosion solution at adjacent corrosion moments to the time interval between adjacent corrosion moments is taken as the turbidity change rate of the corrosion solution; The corrosion rate change index is obtained by weighted summing the color change rate and turbidity change rate of the corrosion liquid. The corrosion rate change index is used to quantitatively evaluate the change trend of the characteristics of the corrosion liquid.
5. The corrosion detection method for subsurface damage of indium phosphide wafer according to claim 1, characterized in that: The method of extracting the corrosion pit feature information in the wafer sub-surface damage layer image and the corrosion liquid feature information in the corrosion liquid image by using an image processing algorithm comprises: Obtain images of the wafer subsurface damage layer and the etching solution at different etching times and perform image preprocessing, which includes image denoising and image enhancement; The corrosion pit feature information in the pre-processed wafer sub-surface damage layer image is extracted by Otsu threshold segmentation algorithm, and the corrosion pit feature information includes the number of corrosion pits, the area of corrosion pits and the roundness of corrosion pits; The feature information of the corrosion liquid in the preprocessed corrosion liquid image is extracted by a color space conversion algorithm and an image grayscale processing algorithm. The feature information of the corrosion liquid includes the color feature of the corrosion liquid and the turbidity feature of the corrosion liquid, wherein the turbidity feature of the corrosion liquid is the standard deviation of the grayscale image of the corrosion liquid.
6. The corrosion detection method for subsurface damage of indium phosphide wafer according to claim 1, characterized in that: The step of determining the end time of the corrosion process by combining the corrosion pit characteristic change trend evaluation result and the corrosion liquid characteristic change trend evaluation result comprises: Obtaining the corrosion pit characteristic change index and the corrosion liquid characteristic change index; The corrosion rate change index is obtained by weighted summing the corrosion pit characteristic change index and the corrosion liquid characteristic change index; When the corrosion rate change index is greater than or equal to the preset corrosion rate change threshold, it indicates that the corrosion process has not ended. When the corrosion rate change index is less than the preset corrosion rate change threshold, it indicates that the corrosion process has ended.
7. A corrosion detection system for subsurface damage of an indium phosphide wafer, applied to a corrosion detection method for subsurface damage of an indium phosphide wafer as claimed in any one of claims 1 to 6, characterized in that: The system comprises: An image acquisition module, used to acquire images of the wafer subsurface damage layer and the etching liquid at different etching times; A feature extraction module is used to extract the feature information of the corrosion pit in the wafer sub-surface damage layer image and the feature information of the corrosion liquid in the corrosion liquid image respectively through an image processing algorithm; A first trend evaluation module is used to evaluate the corrosion pit characteristic change trend according to the corrosion pit characteristic information; The second trend evaluation module is used to evaluate the characteristic change trend of the corrosive liquid according to the characteristic information of the corrosive liquid; The corrosion process evaluation module is used to determine the end time of the corrosion process by combining the corrosion pit characteristic change trend evaluation results and the corrosion liquid characteristic change trend evaluation results.
8. An electronic device comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the corrosion detection method for sub-surface damage of indium phosphide wafers as described in any one of claims 1 to 6 by calling the computer program stored in the memory.
9. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are run on a computer, the computer is caused to execute the corrosion detection method for sub-surface damage of an indium phosphide wafer as described in any one of claims 1 to 6.